Method for producing an optoelectronic component and optoelectronic component

Abstract

A method for producing an optoelectronic component comprises providing an optoelectronic semiconductor chip having a light-emitting surface, arranging a cover material on the light-emitting surface, the cover material comprising a siloxane and embedded wavelength-converting particles, sedimenting the wavelength-converting particles towards the light-emitting surface to form an upper portion of the cover material and a lower portion of the cover material, wherein the lower portion is arranged between the light-emitting surface and the upper portion, wherein the lower portion comprises a higher density of wavelength-converting particles than the upper portion, and forming a plurality of optical lenses on a top side of the upper portion that faces away from the lower portion.

Description

[0001] 2024PF00219 1

[0002] METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT

[0003] DESCRIPTION

[0004] The present invention relates to a method for producing an optoelectronic component and to an optoelectronic component .

[0005] This patent application claims the priority of German patent application 10 2024 123 181 . 5 , the disclosure content of which is hereby incorporated by reference .

[0006] It is known in the state of the art to provide optoelectronic semiconductor chips with wavelength-converting material .

[0007] It is an obj ect of the present invention to provide a method for producing an optoelectronic component . It is a further obj ect of the present invention to provide an optoelectronic component . These obj ectives are achieved by a method for producing an optoelectronic component and by an optoelectronic component according to the independent claims . Various variants are disclosed in the dependent claims .

[0008] A method for producing an optoelectronic component comprises providing an optoelectronic semiconductor chip having a light-emitting surface , arranging a cover material on the light-emitting surface , the cover material comprising a siloxane and embedded wavelength-converting particles , sedimenting the wavelength-converting particles towards the light-emitting surface to form an upper portion of the cover material and a lower portion of the cover material , wherein the lower portion is arranged between the light-emitting surface and the upper portion, wherein the lower portion comprises a higher density of wavelength-converting particles than the upper portion, and forming a plurality of optical lenses on a top side of the upper portion that faces away from the lower portion . 2024PF00219 2

[0009] The optoelectronic component provided by this method may comprise improved radiation characteristics due to the plurality of optical lenses arranged on the top side of the upper portion of the cover material . In particular, the optoelectronic component may comprise good color-over-angle properties and a high forward lighting intensity . This may be supported by a high extraction ef ficiency caused by the topology of the top side of the upper portion of the cover material that is created by the plurality of optical lenses .

[0010] The sedimentation of the wavelength-converting particles leads to an increased density of the wavelength-converting particles in the lower portion of the cover material which may simpli fy heat removal from the wavelength-converting particles during the operation of the optoelectronic component . This may in turn lead to an improved stability of the optoelectronic component and to an improved hot-cold factor due to cooler wavelength-converting particles . The increased density of the wavelength-converting particles in the lower portion of the cover material may also lead to an improved conversion ef ficiency .

[0011] The light-emitting surface comprises a plurality of pixels . This allows to use the optoelectronic component that is provided by this method for applications such as automotive , proj ection and general lighting, for example .

[0012] In a variant of the method, forming the plurality of optical lenses includes reforming the upper portion of the cover material into the plurality of optical lenses . Advantageously, this method makes use of the siloxane of the upper portion of the cover material that is depleted from wavelengthconverting particles after the sedimentation of the wavelength-converting particles . Consequently, there is no need to remove the upper portion of the cover material , resulting in an ef ficient method . Reforming the upper portion of the cover material into optical lenses prevents the upper portion of the cover material from acting as a light guide . Such a 2024PF00219 3 light guide would otherwise lead to overspeaking between di fferent pixels of the light-emitting surface and would result in a reduced pixel-to-pixel contrast . Reforming the upper portion of the cover material into the plurality of optical lenses can thus result in an improved contrast between individual pixels of the light-emitting surface of the optoelectronic semiconductor chip of the resulting optoelectronic component .

[0013] In a variant of the method, reforming the upper portion is carried out by compression molding . Advantageously, this provides a simple and ef ficient method .

[0014] In a variant of the method, the optical lenses are arranged in a two-dimensional array . Such a regular arrangement of the optical lenses provides predictable optical properties of the optoelectronic component .

[0015] In a variant of the method, exactly one optical lens is formed above each pixel of the light-emitting surface . Advantageously, this allows to form relatively large optical lenses having good optical properties .

[0016] In a variant of the method, a plurality of optical lenses is formed above each pixel . Advantageously, this reduces the requirements for aligning the optical lenses on the pixels of the light-emitting surface .

[0017] In a variant of the method, forming the plurality of optical lenses includes arranging a plurality of glass beads on the upper portion of the cover material , and sedimenting the glass beads into the upper portion, wherein glass beads arranged at the top side of the upper portion form the optical lenses . This method provides an easy way to form a large number of optical lenses at the top side of the upper portion of the cover material . 2024PF00219 4

[0018] In a variant of the method, an additional step is carried out for removing excess glass beads from the top side of the upper portion . Advantageously, this removes glass beads that are not bound to the cover material of the optoelectronic component .

[0019] In a variant of the method, removing excess glass beads is carried out by mechanical brushing or by high pressure cleaning . Advantageously, these methods have proven to be ef fective for removing excess glass beads .

[0020] In a variant of the method, an additional step is carried out for applying plasma etching to remove at least some siloxane that is exposed at the top side of the upper portion . Advantageously, this exposes a larger fraction of the surfaces of glass beads arranged at the top side of the upper portion of the cover material , leading to improved lens properties of the glass beads .

[0021] In a variant of the method, an additional step is carried out before applying the cover material for determining an emission spectrum of the optoelectronic semiconductor chip . The cover material is applied in dependence of the emission spectrum . Advantageously, this allows to compensate for variations between the emission spectra of individual optoelectronic semiconductor chips and allows to achieve a precisely defined color point .

[0022] In a variant of the method, an additional step is carried out for arranging a mask pattern on the optoelectronic semiconductor chip . The cover material is arranged in an opening of the mask pattern . Advantageously, this allows for an easy application of the cover material .

[0023] In a variant of the method, the cover material is arranged by j etting or dispensing . Advantageously, these methods allow for arranging the cover material in a quick and ef ficient way . 2024PF00219 5

[0024] In a variant of the method, sedimenting is carried out by centri fugation . Advantageously, this allows for an ef fective sedimentation of the wavelength-converting particles .

[0025] In a variant of the method, the optoelectronic semiconductor chip is provided in a wafer . The method includes an additional step for singulating the optoelectronic semiconductor chip . This allows for an ef ficient production of a plurality of optoelectronic components in parallel .

[0026] An optoelectronic component comprises an optoelectronic semiconductor chip having a light-emitting surface . The lightemitting surface comprises a plurality of pixels . A cover material is arranged on the light-emitting surface . The cover material comprises a siloxane and wavelength-converting particles . The cover material comprises an upper portion and a lower portion . The lower portion is arranged between the light-emitting surface and the upper portion . The lower portion comprises a higher density of wavelength-converting particles than the upper portion . A top side of the upper portion facing away from the lower portion comprises a plurality of optical lenses .

[0027] This optoelectronic component may comprise improved radiation characteristics due to the plurality of optical lenses arranged on the top side of the upper portion of the cover material . In particular, the optoelectronic component may comprise good color-over-angle properties and a high forward lighting intensity . This may be supported by a high extraction ef ficiency caused by the topology of the top side of the upper portion of the cover material that is created by the plurality of optical lenses .

[0028] The increased density of the wavelength-converting particles in the lower portion of the cover material may simpli fy heat removal from the wavelength-converting particles during the operation of the optoelectronic component . This may lead to 2024PF00219 6 an improved stability of the optoelectronic component and to an improved hot-cold factor due to cooler wavelengthconverting particles . The increased density of the wavelength-converting particles in the lower portion of the cover material may also lead to an improved conversion ef ficiency .

[0029] In a variant of the optoelectronic component , the upper portion of the cover material is reformed into the plurality of optical lenses . This may prevent the upper portion of the cover material from acting as a light guide . Such a light guide would otherwise lead to overspeaking between di f ferent pixels of the light-emitting surface and would result in a reduced pixel-to-pixel contrast . Reforming the upper portion of the cover material into the plurality of optical lenses can thus result in an improved contrast between individual pixels of the light-emitting surface of the optoelectronic semiconductor chip of the resulting optoelectronic component .

[0030] In a variant of the optoelectronic component , the upper portion of the cover material is reformed into a two-dimensional array of optical lenses . Such a regular arrangement of the optical lenses provides predictable optical properties of the optoelectronic component .

[0031] In a variant of the optoelectronic component , a plurality of glass beads is embedded into the upper portion of the cover material . Glass beads arranged at the top side of the upper portion form the optical lenses . In this way, the optoelectronic component may comprise a large number of optical lenses at the top side of the upper portion of the cover material .

[0032] The above-described properties , features , and advantages of the invention as well as the manner in which they are achieved, will become more clearly and comprehensively understandable through the following description of exemplary variants . These variants will be explained in more detail in 2024PF00219 7 conj unction with the drawings , in which, in schematic representation :

[0033] Fig . 1 shows an optoelectronic semiconductor chip having an upper side with a light-emitting surface ;

[0034] Fig . 2 shows the optoelectronic semiconductor chip with a mask pattern arranged on the upper side ;

[0035] Fig . 3 shows the optoelectronic semiconductor chip with a cover material arranged on the light-emitting surface ;

[0036] Fig . 4 shows the optoelectronic semiconductor chip and the cover material after sedimenting wavelengthconverting particles embedded in the cover material ;

[0037] Fig . 5 shows a first variant of an optoelectronic component obtained after reforming an upper portion of the cover material into a plurality of optical lenses ;

[0038] Fig . 6 shows the optoelectronic semiconductor chip with a plurality of glass beads arranged on an upper portion of the cover material ;

[0039] Fig . 7 shows the optoelectronic semiconductor chip after sedimenting the glass beads into the upper portion of the cover material ;

[0040] Fig . 8 shows a second variant of the optoelectronic component obtained after removing excess glass beads from the optoelectronic semiconductor chip ;

[0041] Fig . 9 shows a detail of the top side of the upper portion of the cover material before plasma etching; and 2024PF00219 8

[0042] Fig . 10 shows the top side of the upper portion of the cover material after plasma etching .

[0043] Fig . 1 shows a schematic sectional side view of an optoelectronic semiconductor chip 100 arranged in a wafer 150 . The wafer 150 may comprise a large number of further optoelectronic semiconductor chips which are developed like the depicted optoelectronic semiconductor chip 100 .

[0044] The optoelectronic semiconductor chip 100 comprises an upper side 101 and a lower side 102 that is opposed to the upper side 101 . At its upper side 101 , the optoelectronic semiconductor chip 100 has a light-emitting surface 110 . The lightemitting surface 110 is divided into a plurality of pixels 120 . In most cases , the pixels 120 are arranged in a regular two-dimensional matrix pattern . The optoelectronic semiconductor chip 100 is designed to emit light at its lightemitting surface 110 . In most variants of the optoelectronic semiconductor chip 100 , the pixels 120 of the light-emitting surface 110 can be addressed individually such that emission of light from the individual pixels 120 of the light-emitting surface 110 can be switched on and of f individually . The optoelectronic semiconductor chip 100 may be a light-emitting diode chip .

[0045] In the example depicted in Fig . 1 , a contact pad 130 is arranged on the upper side 101 of the optoelectronic semiconductor chip 100 next to the light-emitting surface 110 . The contact pad 130 can be used to provide the optoelectronic semiconductor chip 100 with an electric voltage and with electric current . The optoelectronic semiconductor chip 100 comprises one or more further contact pads arranged on the upper side 101 or the lower side 102 of the optoelectronic semiconductor chip 100 which are not shown in the schematic depiction of Fig . 1 . The contact pad 130 can be arranged on the lower side 102 instead of the upper side 101 in other variants of the optoelectronic semiconductor chip 100 . 2024PF00219 9

[0046] Fig . 2 shows a schematic depiction of the optoelectronic semiconductor chip 100 in a processing state that follows the depiction of Fig . 1 . A mask pattern 200 has been arranged on the upper side 101 of the optoelectronic semiconductor chip 100 . The mask pattern 200 may be formed from a dry resist , for example . The mask pattern 200 may have been created and patterned by a lithographic process , for example . The mask pattern 200 comprises an opening 210 which exposes the lightemitting surface 110 such that the light-emitting surface 110 is not covered by the mask pattern 200 but is bounded by the mask pattern 200 . In the example shown in Fig . 2 , the mask pattern 200 comprises a further opening 220 at the location of the contact pad 130 such that the contact pad 130 is not covered by the mask pattern 200 either .

[0047] Fig . 3 shows a schematic sectional side view of the optoelectronic semiconductor chip 100 in a processing stat that follows the depiction of Fig . 2 . A cover material 300 has been arranged on the light-emitting surface 110 . The cover material 300 comprises a siloxane 301 and wavelength-converting particles 302 embedded in the siloxane 301 . The siloxane 301 may be a silicone , for example . The wavelength-converting particles 302 are designed to convert at least a part of light emitted by the optoelectronic semiconductor chip 100 at the light-emitting surface 110 into light of a di f ferent wavelength . The wavelength-converting particles 302 may be designed for converting light from the green or blue spectral range into light from the red or yellow spectral range , for example .

[0048] The amount of the cover material 300 and the amount of the embedded wavelength-converting particles 302 are chosen such that a mixture of unconverted light emitted by the optoelectronic semiconductor chip 100 and light that has been converted by the wavelength-converting particles 302 comprises a desired color . The optoelectronic semiconductor chip 100 may have been tested earlier in the processing state depicted in Fig . 1 to determine a wavelength or a spectrum of the light 2024PF00219 10 emitted by the optoelectronic semiconductor chip 100 or by the individual pixels 120 of the light-emitting surface 110 . In this case , the amount of the cover material 300 and the amount of the embedded wavelength-converting particles 302 may be chosen in dependence of the previously determined emission spectrum of the optoelectronic semiconductor chip 100 .

[0049] It is possible to also probe the optoelectronic semiconductor chip 100 while the cover material 300 is applied or inbetween consecutive steps of applying the cover material 300 to determine a color or spectrum of the mixture of unconverted and converted light that is emitted by the optoelectronic semiconductor chip 100 . This allows to achieve a desired color point with even more precision . It is also possible to locally optimi ze the color point in the case that the emission spectra of di f ferent pixels 120 of the light-emitting surface 110 of the optoelectronic semiconductor chip 100 di ffer from each other .

[0050] The cover material 300 has been arranged in the opening 210 of the mask pattern 200 , for example by j etting or by dispensing . The mask pattern 200 may serve as a dam to prevent other parts of the upper side 101 of the optoelectronic semiconductor chip 100 from getting covered by the cover material 300 .

[0051] Fig . 4 shows a schematic sectional side view of the optoelectronic semiconductor chip 100 in a processing state that follows the depiction of Fig . 3 . A sedimentation process has been carried out to sediment the wavelength-converting particles 302 of the cover material 300 towards the light-emitting surface 110 . Sedimenting the wavelength-converting particles 302 may have been carried out by centri fugation, for example . The sedimentation process has formed a lower portion 310 and an upper portion 320 of the cover material 300 . The lower portion 310 is arranged closer to the light-emitting surface 110 such that the lower portion 310 is arranged between the 2024PF00219 11 light-emitting surface 110 and the upper portion 320 . The lower portion 310 comprises a higher density of wavelengthconverting particles 302 than the upper portion 320 . The upper portion 320 may even be almost or completely free of wavelength-converting particles 302 .

[0052] Fig . 5 shows a schematic sectional side view of the optoelectronic semiconductor chip 100 in a processing state that follows the depiction of Fig . 4 . The upper portion 320 of the cover material 300 has been reformed into a plurality of optical lenses 400 . The optical lenses 400 are arranged at a top side 321 of the upper portion 320 that faces away from the lower portion 310 . Reforming the upper portion 320 into the optical lenses 400 may have been performed by compression molding, for example . This step may have been followed by a curing step to harden the cover material 300 .

[0053] It is convenient i f the optical lenses 400 are arranged in a regular two-dimensional array 410 . The number of optical lenses 400 may be equal to the number of pixels 120 of the light-emitting surface 110 such that exactly one optical lens 400 is formed above each one pixel 120 . Alternatively, the number of optical lenses 400 may be larger than the number of pixels 120 such that a plurality of optical lenses 400 is formed above each pixel 120 .

[0054] By reforming the upper portion 320 of the cover material 300 into the optical lenses 400 , a light-guide ef fect inside the upper portion 320 of the cover material 300 is reduced, thereby reducing overspeaking between individual pixels 120 and improving light extraction from the cover material 300 . The optical lenses 400 may also improve color-over-angle properties of the optoelectronic semiconductor chip 100 .

[0055] In a following processing step, the optoelectronic semiconductor chip 100 may be singulated to form a first variant of an optoelectronic component 10 . Singulating the optoelectron- 2024PF00219 12 ic semiconductor chip 100 may be carried out by dividing the wafer 150 , for example by sawing .

[0056] Before or after the singulation of the optoelectronic semiconductor chip 100 , the mask pattern 200 may be removed from the upper side 101 of the optoelectronic semiconductor chip 100 . In other variants , however, the mask pattern 200 may remain in the final optoelectronic component 10 .

[0057] Fig . 6 shows a schematical sectional side view of the optoelectronic semiconductor chip 100 in a processing state that follows the depiction of Fig . 4 in another variant of the fabrication method . In this variant , a plurality of glass beads 500 has been arranged on the upper portion 320 of the cover material 300 . In the example shown in Fig . 6 , glass beads 500 have also been arranged on the other parts of the upper side 101 of the optoelectronic semiconductor chip 100 , but those glass beads 500 that are not arranged on the cover material 300 will be removed again later . Alternatively, it is possible to limit the application of the glass beads 500 to the area of the cover material 300 right from the start .

[0058] The glass beads 500 comprise a spherical shape with a diameter in the pm range . The glass beads 500 comprise a glass material .

[0059] Fig . 7 shows a schematic depiction of the optoelectronic semiconductor chip 100 in a processing state that follows the depiction of Fig . 6 . In a sedimentation process such as centri fugation, the glass beads 500 have been sedimented into the upper portion 320 of the cover material 300 . This has increased the volume of the upper portion 320 which now comprises siloxane 301 and glass beads 500 embedded into the siloxane 301 . In a following processing step, the siloxane 301 of the cover material 300 may be cured . This turns the upper portion 320 of the cover material 300 into a hard layer comprising glass beads 500 and siloxane 301 . 2024PF00219 13

[0060] Glass beads 500 arranged at a top side 321 of the upper portion 320 that faces away from the lower portion 310 form a plurality of optical lenses 400 .

[0061] Fig . 8 shows a schematic sectional side view of the optoelectronic semiconductor chip 100 in a processing state that follows the depiction of Fig . 7 . Excess glass beads 500 , 510 , which were not bound in the upper portion 320 of the cover material 300 , have been removed from the top side 321 of the upper portion 320 and from other parts of the upper side 101 of the optoelectronic semiconductor chip 100 . Removing the excess glass beads 500 , 510 may have been carried out by mechanical brushing or by high pressure cleaning, for example .

[0062] In a following processing step, the optoelectronic semiconductor chip 100 may be singulated to form a second variant of an optoelectronic component 10 . This may be carried out as explained above in conj unction with Fig . 5 .

[0063] Before the singulation of the optoelectronic semiconductor chip 100 , an optional plasma etching step can be carried out . Fig . 9 shows a schematic depiction of a magni fied section of the top side 321 of the upper portion 320 of the cover material 300 before the plasma etching step . Fig . 10 shows a schematic depiction of the same section of the top side 321 of the upper portion 320 of the cover material 300 after the plasma etching . The application of plasma etching removes at least some siloxane 301 , 322 that is exposed at the top side 321 of the upper portion 320 . Removing at least some of the exposed siloxane 301 , 322 leads to an increased exposure of the glass beads 500 at the top side 321 of the upper portion 320 which increases their ef fect as optical lenses 400 .

[0064] The invention has been illustrated and described in more detail with the aid of exemplary variants . The invention is not , however, restricted to the examples disclosed . Rather, other variants may be derived therefrom by the person skilled in the art . 2024PF00219 14

[0065] REFERENCE SYMBOLS

[0066] 10 optoelectronic component

[0067] 100 optoelectronic semiconductor chip

[0068] 101 upper side

[0069] 102 lower side

[0070] 110 light-emitting surface

[0071] 120 pixel

[0072] 130 contact pad

[0073] 150 wafer

[0074] 200 mask pattern

[0075] 210 opening

[0076] 220 further opening

[0077] 300 cover material

[0078] 301 siloxane

[0079] 302 wavelength-converting particle

[0080] 310 lower portion

[0081] 320 upper portion

[0082] 321 top side

[0083] 322 exposed siloxane

[0084] 400 optical lens

[0085] 410 two-dimensional array

[0086] 500 glass bead

[0087] 510 excess glass beads

Claims

1. 2024PF00219 15CLAIMS1. A method for producing an optoelectronic component (10) comprising- providing an optoelectronic semiconductor chip (100) having a light-emitting surface (110) , wherein the light-emitting surface (110) comprises a plurality of pixels (120) ;- arranging a cover material (300) on the light-emitting surface (110) , the cover material (300) comprising a siloxane (301) and embedded wavelength-converting particles (302) ;- sedimenting the wavelength-converting particles (302) towards the light-emitting surface (110) to form an upper portion (320) of the cover material (300) and a lower portion (310) of the cover material (300) , wherein the lower portion (310) is arranged between the light-emitting surface (110) and the upper portion (320) , wherein the lower portion (310) comprises a higher density of wavelength-converting particles (302) than the upper portion (320) ;- forming a plurality of optical lenses (400) on a top side (321) of the upper portion (320) that faces away from the lower portion (310) .

2. The method as claimed in claim 1, wherein forming the plurality of optical lenses (400) includes :- reforming the upper portion (320) of the cover material (300) into the plurality of optical lenses (400) .

3. The method as claimed in claim 2, wherein reforming the upper portion (320) is carried out by compression molding.

4. The method as claimed in one of the previous claims, wherein the optical lenses (400) are arranged in a two- dimensional array (410) .2024PF00219 165. The method as claimed in claim 4, wherein one optical lens (400) is formed above each pixel (120) .

6. The method as claimed in claim 4, wherein a plurality of optical lenses (400) is formed above each pixel (120) .

7. The method as claimed in claim 1, wherein forming the plurality of optical lenses (400) includes :- arranging a plurality of glass beads (500) on the upper portion (320) of the cover material (300) ;- sedimenting the glass beads (500) into the upper portion (320) , wherein glass beads (500) arranged at the top side (321) of the upper portion (320) form the optical lenses (400) .

8. The method as claimed in claim 7, comprising the following additional step:- removing excess glass beads (500, 510) from the top side (321) of the upper portion (320) .

9. The method as claimed in claim 8, wherein removing excess glass beads (500, 510) is carried out by mechanical brushing or by high pressure cleaning.

10. The method as claimed in one of claims 7 to 9, comprising the following additional step:- applying plasma etching to remove at least some siloxane (301, 322) that is exposed at the top side (321) of the upper portion (320) .

11. The method as claimed in one of the previous claims, wherein the following step is carried out before applying the cover material (300) :- determining an emission spectrum of the optoelectronic2024PF00219 17 semiconductor chip (100) , wherein the cover material (300) is applied in dependence of the emission spectrum.

12. The method as claimed in one of the previous claims, comprising the following additional step:- arranging a mask pattern (200) on the optoelectronic semiconductor chip (100) , wherein the cover material (300) is arranged in an opening (210) of the mask pattern (200) .

13. The method as claimed in one of the previous claims, wherein the cover material (300) is arranged by jetting or dispensing.

14. The method as claimed in one of the previous claims, wherein sedimenting is carried out by centrifugation.

15. The method as claimed in one of the previous claims, wherein the optoelectronic semiconductor chip (100) is provided in a wafer (150) , wherein the method comprises the following additional step :- singulating the optoelectronic semiconductor chip (100) .

16. An optoelectronic component (10) comprising an optoelectronic semiconductor chip (100) having a light-emitting surface (110) , wherein the light-emitting surface (110) comprises a plurality of pixels (120) , wherein a cover material (300) is arranged on the lightemitting surface (110) , wherein the cover material (300) comprises a siloxane(301) and wavelength-converting particles (302) , wherein the cover material (300) comprises an upper portion (320) and a lower portion (310) , the lower portion(310) being arranged between the light-emitting surface2024PF00219 18(110) and the upper portion (320) , wherein the lower portion (310) comprises a higher density of wavelength-converting particles (302) than the upper portion (320) , wherein a top side (321) of the upper portion (320) facing away from the lower portion (310) comprises a plurality of optical lenses (400) .

17. The optoelectronic component (10) as claimed in claim 16, wherein the upper portion (320) of the cover material (300) is reformed into the plurality of optical lenses (400) .

18. The optoelectronic component (10) as claimed in claim 17, wherein the upper portion (320) of the cover material(300) is reformed into a two-dimensional array of optical lenses (400) .

19. The optoelectronic component (10) as claimed in claim 16, wherein a plurality of glass beads (500) is embedded into the upper portion (320) of the cover material (300) , wherein glass beads (500) arranged at the top side (321) of the upper portion (320) form the optical lenses (400) .

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