IGZO material film having superlattice structure, manufacturing method therefor, and ultra-high mobility transistor using same

Abstract

A manufacturing method for an IGZO material film is provided. The manufacturing method for an IGZO material film comprises the steps of: preparing a substrate; providing on the substrate an indium (In) precursor and a first reactant, to form a first material film including In; providing on the first material film a gallium (Ga) precursor, a second reactant, a zinc (Zn) precursor, and a third reactant, to form a second material film including Ga and Zn; and heat-treating an IGZO material film in which the second material film is formed on the first material film, wherein two-dimensional electron gas is produced between the first material film and the second material film by controlling the temperature of the heat treatment of the IGZO material film.

Description

IGZO material film with superlattice structure, its manufacturing method, and ultra-high mobility transistor using the same

[0001] The present invention relates to an IGZO material film having a superlattice structure, a method for manufacturing the same, and an ultra-high mobility transistor using the same.

[0002] Oxide semiconductor TFTs are considered promising candidates not only for the display backplane, which has been attracting attention, but also for the memory / system semiconductor field due to their high mobility and very low leakage current characteristics. However, to replace the existing LTPS (Low-temperature polycrystalline silicon), higher mobility (>100 cm 2 / Vs) is required.

[0003] Basically, since oxide semiconductors have a conduction band formed by metal ns orbitals, increasing the cation elements with large metal ns orbitals, such as In and Sn, increases the overlap of the metal ns orbitals, thereby increasing the mobility. In addition, increasing the composition of cations that generate these carriers increases the mobility by increasing the carriers due to the percolation effect. Conventional sputter-based oxide semiconductors increase the mobility by controlling the cation composition through a target with a high indium composition or co-sputtering, or by controlling oxygen vacancies (Vo) by controlling the partial pressure of oxygen. In the case of ALD (Atomic Layer Deposition)-based oxide semiconductors, high-mobility oxide semiconductors are developed by increasing the sub-cycle of In. Separately, since crystallization can increase mobility by aligning the elements, the development of high-mobility oxide semiconductors is progressing by inducing crystallization of oxide semiconductors with hydrogen or metal capping.

[0004] Conventional high-mobility research on oxide semiconductors has relied on physical vapor deposition (Vo) techniques such as sputtering. These physical vapor deposition-based oxide semiconductors have limited composition control due to their fixed-composition targets, and oxygen control is also limited to controlling the oxygen partial pressure. While carriers can be controlled by controlling the amount of Vo through oxygen partial pressure adjustment, the inherent oxygen content of the oxide target limits the range of oxygen control below 0%. Furthermore, physical vapor deposition also limits precise oxygen control. Consequently, sputtering-based oxide semiconductors exhibit limited high mobility. Furthermore, as mobility increases, electrical properties become more sensitive to Vo within the oxide semiconductor, requiring precise control of oxygen over a wide range. The mobility improvement associated with increasing In content in conventional ALD-based oxide semiconductors is limited by the presence of high indium / oxygen-related defects and the formation of grain boundaries due to polycrystalline formation above a certain In content, leading to mobility degradation or loss of switching characteristics. Separately, improving mobility through crystallization requires additional processes such as metal capping, and there are problems such as reproducibility and large-area uniformity due to crystallization.

[0005] The technical problem to be solved by the present invention is to provide an IGZO material film and a method for manufacturing the same.

[0006] Another technical problem to be solved by the present invention is to provide an IGZO material film having a superlattice structure in which atoms are arranged, and a method for manufacturing the same.

[0007] Another technical problem to be solved by the present invention is to provide an IGZO material film that generates a quantum confinement effect and a method for manufacturing the same.

[0008] Another technical problem to be solved by the present invention is to provide an IGZO material film in which a two-dimensional electron gas is formed between an In2O3 material film and a GaZnO material film, and a method for manufacturing the same.

[0009] Another technical problem to be solved by the present invention is to provide a transistor in which an IGZO material film is applied as an active film.

[0010] Another technical problem that the present invention seeks to solve is to provide a transistor with ultra-high mobility.

[0011] The technical problems to be solved by the present invention are not limited to those described above.

[0012] To solve the above-described technical problems, the present invention provides a method for manufacturing an IGZO material film.

[0013] According to one embodiment, the method for manufacturing the IGZO material film includes the steps of preparing a substrate, providing an indium (In) precursor and a first reactant on the substrate to form a first material film including indium, providing a gallium (Ga) precursor, a second reactant, a zinc (Zn) precursor, and a third reactant on the first material film to form a second material film including gallium and zinc, and heat-treating the IGZO material film on which the second material film is formed on the first material film, wherein the method may include forming a two-dimensional electron gas between the first material film and the second material film by controlling a heat treatment temperature of the IGZO material film.

[0014] According to one embodiment, the IGZO material film may be heat treated at a temperature of more than 200°C and less than 300°C, thereby forming a two-dimensional electron gas between the first material film and the second material film.

[0015] According to one embodiment, the IGZO material film may include a decrease in the degree of disorder of the arrangement of atoms within the IGZO material film as the IGZO material film is heat-treated at a temperature of more than 200°C and less than 300°C.

[0016] According to one embodiment, the IGZO material film may include a reduction in the oxygen defect ratio within the IGZO material film as the IGZO material film is heat-treated at a temperature of more than 200°C and less than 300°C.

[0017] According to one embodiment, the first material film may be formed through a first unit process of providing the indium precursor and the first reactant on the substrate, and the second material film may be formed through a second unit process of providing the gallium precursor and the second reactant on the first material film and a third unit process of providing the zinc precursor and the third reactant on the first material film.

[0018] According to one embodiment, the number of repetitions of the first unit process: the number of repetitions of the second unit process: the number of repetitions of the third unit process may be controlled at a ratio of more than 10:1:1 and less than 14:1:1.

[0019] According to one embodiment, the first unit process may include a step of providing the indium precursor on the substrate and a step of providing the first reactant on the substrate on which the indium precursor is provided, the second unit process may include a step of providing the gallium precursor on the first material film and a step of providing the second reactant on the first material film on which the gallium precursor is provided, and the third unit process may include a step of providing the zinc precursor on the first material film and a step of providing the third reactant on the first material film on which the zinc precursor is provided.

[0020] In one embodiment, the first to third reactants may all include oxygen plasma (O2plasma).

[0021] According to one embodiment, the power of the oxygen plasma may be controlled to be greater than 70 W and less than 200 W.

[0022]

[0023] To solve the above-described technical problems, the present invention provides an IGZO material film.

[0024] According to one embodiment, the IGZO material film may include a first material film including indium (In) and oxygen (O), and a second material film including gallium (Ga), zinc (Zn), and oxygen (O), wherein a two-dimensional electron gas is formed between the first material film and the second material film.

[0025] According to one embodiment, the arrangement of atoms within the IGZO material film may include a superlattice structure.

[0026] According to one embodiment, it may include occurrence of a quantum confinement effect within the IGZO material film.

[0027]

[0028] To solve the above-described technical problems, the present invention provides a transistor.

[0029] According to one embodiment, the transistor may include a source and a drain spaced apart from each other on a substrate, an IGZO material film disposed on the substrate such that one side is in contact with the source and the other side is in contact with the drain, a gate insulating film disposed on the substrate so as to cover the source, the drain, and the active layer, and a gate electrode disposed on the gate insulating film, wherein the IGZO material film may include a first material film including indium (In) and oxygen (O), and a second material film including gallium (Ga), zinc (Zn), and oxygen (O), and a two-dimensional electron gas formed between the first material film and the second material film.

[0030] In one embodiment, the transistor is 240 cm 2 / Can include those with a mobility of more than Vs.

[0031] The present invention manufactures an IGZO material film using a PEALD process, and by controlling the In:Ga:Zn cycle ratio, plasma power, and subsequent heat treatment temperature, a two-dimensional electron gas can be formed between an In2O3 material film and a GaZnO material film.

[0032] As described above, the transistor in which the IGZO material film, in which a two-dimensional electron gas is formed between the In2O3 material film and the GaZnO material film, is applied as an active film, has a wavelength of 240 cm 2 / Vs can have higher mobility than that.

[0033] FIG. 1 is a flowchart for explaining a method for manufacturing an IGZO material film according to an embodiment of the present invention.

[0034] FIG. 2 is a process flow diagram specifically explaining steps S200 and S300 of a method for manufacturing an IGZO material film according to an embodiment of the present invention.

[0035] FIG. 3 is a drawing for explaining an IGZO material film according to an embodiment of the present invention.

[0036] FIG. 4 is a schematic diagram illustrating the arrangement of atoms in an IGZO material film according to an embodiment of the present invention.

[0037] FIG. 5 and FIG. 6 are drawings for explaining the STEM analysis results of the IGZO material film according to Experimental Example 1 of the present invention.

[0038] FIGS. 7 to 9 are drawings for explaining the results of fast Fourier transform analysis of an IGZO material film according to Experimental Example 1 of the present invention.

[0039] Fig. 10 is a schematic diagram illustrating a transistor and its manufacturing process according to Experimental Example 2 of the present invention.

[0040] FIG. 11 is a drawing for comparing various electrical characteristics of transistors according to experimental examples 2-1 to 2-5 of the present invention.

[0041] FIG. 12 is a drawing for specifically comparing the mobility of transistors according to experimental examples 2-1 to 2-5 of the present invention.

[0042] FIG. 13 is a drawing for explaining the transfer curve of each transistor according to Experimental Examples 2-1 to 2-5 of the present invention.

[0043] Figure 14 is a drawing for comparing the metal content in the IGZO material film according to Experimental Examples 2-1 to 2-5 of the present invention.

[0044] Figure 15 is a drawing for comparing the oxygen ratio in the IGZO material film according to Experimental Examples 2-1 to 2-5 of the present invention.

[0045] Figure 16 is a drawing for comparing the oxygen defect ratio in the IGZO material film according to Experimental Examples 2-1 to 2-5 of the present invention.

[0046] Figure 17 is a drawing for explaining oxygen desorption according to the heat treatment temperature of an IGZO material film.

[0047] Figures 18 to 20 are drawings for explaining the GIWAXS analysis results of IGZO material films according to Experimental Examples 2-1 to 2-5 of the present invention.

[0048] FIG. 21 is a drawing for comparing transfer curves of transistors according to experimental examples 3-1 to 3-3 of the present invention.

[0049] FIG. 22 is a drawing for comparing various electrical characteristics of transistors according to experimental examples 3-1 to 3-3 of the present invention.

[0050] Figure 23 is a drawing for comparing the output characteristics of transistors according to experimental examples 3-1 to 3-3 of the present invention.

[0051] FIG. 24 is a drawing for comparing transfer curves of transistors according to experimental examples 4-1 to 4-4 of the present invention.

[0052] FIG. 25 is a drawing for comparing various electrical characteristics of transistors according to experimental examples 4-1 to 4-4 of the present invention.

[0053] Fig. 26 is a drawing for comparing the output characteristics of transistors according to experimental examples 4-1 to 4-4 of the present invention.

[0054] Figure 27 is a drawing for explaining the AIMD simulation results and TEM analysis results of the IGZO material film according to Experimental Examples 5-1 and 5-2 of the present invention.

[0055] FIG. 28 is a drawing for explaining the atomic structure model and electrostatic potential plot of the IGZO material film according to Experimental Examples 6-1 and 6-2 of the present invention.

[0056] Figure 29 is a drawing visualizing the charge density distribution of the IGZO material film according to Experimental Examples 6-1 and 6-2 of the present invention.

[0057] Figure 30 is a drawing for establishing the band alignment of the IGZO material film according to Experimental Example 6-1 of the present invention.

[0058] FIG. 31 and FIG. 32 are drawings for explaining the temperature-related transmission characteristics of a transistor to which an IGZO material film according to Experimental Example 6-1 of the present invention is applied.

[0059] Figure 33 is a drawing for explaining the arrangement state of atoms in an IGZO material film according to Experimental Example 7 of the present invention.

[0060] Figure 34 is a drawing for explaining the formation of a potential well according to the arrangement state of atoms in an IGZO material film.

[0061] Figure 35 is a drawing for explaining the change in the movement path of electrons according to the arrangement state of atoms in an IGZO material film.

[0062] Figure 36 is a drawing for explaining the average distance distribution between metals according to the arrangement state of atoms in an IGZO material film.

[0063] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical concept of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete and to sufficiently convey the spirit of the present invention to those skilled in the art.

[0064] In this specification, when a component is referred to as being on another component, it means that it can be formed directly on the other component, or a third component may be interposed between them. In addition, in the drawings, the thicknesses of films and regions are exaggerated for the purpose of effectively explaining the technical contents.

[0065] Also, although terms such as first, second, and third have been used to describe various components in various embodiments of this specification, these components should not be limited by these terms. These terms are only used to distinguish one component from another. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiments. Also, the term "and / or" has been used herein to mean including at least one of the components listed before and after.

[0066] In the specification, singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, terms such as "comprise" or "have" are intended to specify the presence of a feature, number, step, component, or combination thereof described in the specification, and should not be construed as excluding the presence or addition of one or more other features, numbers, steps, components, or combinations thereof. In addition, the term "connection" is used in the present specification to mean both indirectly connecting multiple components and directly connecting them.

[0067] In addition, when describing the present invention below, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0068]

[0069] FIG. 1 is a flowchart for explaining a method for manufacturing an IGZO material film according to an embodiment of the present invention, FIG. 2 is a process flowchart for specifically explaining steps S200 and S300 of a method for manufacturing an IGZO material film according to an embodiment of the present invention, FIG. 3 is a drawing for explaining an IGZO material film according to an embodiment of the present invention, and FIG. 4 is a schematic diagram for explaining the arrangement of atoms in an IGZO material film according to an embodiment of the present invention.

[0070] Referring to FIGS. 1 to 4, a substrate (S) may be prepared (S100). In one embodiment, the substrate (S) may be a silicon semiconductor substrate. Alternatively, in another embodiment, the substrate (S) may be any one of a compound semiconductor substrate, a glass substrate, or a plastic substrate. The type of the substrate (S) is not limited.

[0071] An indium precursor (In precursor) and a first reactant (1) are formed on the above substrate (S). st By providing a reactant, the indium precursor and the first reactant can form a first material film (110) by reacting (S200). Accordingly, the first material film (110) can include indium oxide. For example, the first material film (110) can include In2O3.

[0072] According to one embodiment, the first material film (110) may be formed by a PEALD (Plasma Enhanced Atomic Layer Deposition) process. More specifically, the step (S200) of forming the first material film (110) may include a step (S210) of providing the indium precursor on the substrate (S), a purge step (S220), a step (S230) of providing the first reactant on the substrate (S) on which the indium precursor is provided, and a purge step (S240), as illustrated in FIG. 2. For example, the indium precursor may include DADI ((3-Dimethylaminopropyl)dimethylindium).For example, the above indium precursors are TMI(Trimethyl indium), TEI(Triethyl indium), InCA-1(Bis(trimethysilyl)amidodiethyl indium), CpIn(Cyclopentadienylindium), In(tmhd)3((Tris(2,2,6,6-tetramethyl-3,5-heptandionato) indium(III)), In(acac)3((Indium(III) acetylacetonate), DATI((dimethylbutylamino)trimethylindium), Me2In(EDPA)(dimethyl(Nethoxy-2,2-dimethylpropanamido)indium), InEtCp(ethylcyclopentadienyl indium), TMION(Trimethyl[N-(2-methoxyethyl)-2-methylpropan-2-amine]indium), DMION(Dimethyl[N-(tert-butyl)-2-methoxy-2-methylpropan-1-amine]indium), DMITN(Dimethyl[N1-(tert-butyl)-N2,N2-dimethylethane-1,2-diamine]indium), [In[(i Pr)2CNEt2]3](tris-(N,N-diisopropyl-2-diethylamido-guanidinato)- indium(III)), [In[(i Pr)2CNMe2]3](tris-(N,N), Et2InN(SiMe3)2(diethyl[bis(trimethylsilyl)amido]indium), In(dmamp)3(tris(1-dimethylamino-2-methyl-2-propoxy)indium), and tris((N,N'-diisopropylacetamidinato)indium(III)) can be included.Additionally, the first reactant may further include argon (Ar).

[0073] The above indium precursor providing step (S210) - purge step (S220) - the first reactant providing step (S230) - purge step (S240) is the first unit process (1 st The first unit process (U10) can be defined as a first unit process (U10). The first unit process (U10) can be repeated multiple times. Accordingly, the thickness of the first material film (110) can be controlled.

[0074] On the first material film (110), a gallium precursor (Ga precursor) and a second reactant (2 nd Reactant), zinc precursor (Zn Precursor), and third reactant (3 rd By providing a reactant, the gallium precursor, the second reactant, the zinc precursor, and the third reactant can form a second material film (120) in which the gallium precursor, the second reactant, the zinc precursor, and the third reactant are reacted (S300). Accordingly, the second material film (120) can include gallium (Ga), zinc (Zn), and oxygen (O). For example, the second material film (120) can include GaZnO.

[0075] According to one embodiment, the second material film (120) may be formed by a PEALD (Plasma Enhanced Atomic Layer Deposition) process. More specifically, the step of forming the second material film (120) may include, as illustrated in FIG. 2, a step of providing the gallium precursor on the first material film (110) (S310), a purge step (S320), a step of providing the second reactant on the first material film (110) on which the gallium precursor is provided (S330), a purge step (S340), a step of providing the zinc precursor on the first material film (110) (S350), a purge step (S360), a step of providing the third reactant on the first material film (110) on which the zinc precursor is provided (S370), and a purge step (S380).

[0076] For example, the gallium precursor may include TMGa (trimethylgallium). For another example, the gallium precursor is TEGa(Triethyl gallium), Ga(acac)3(Gallium acetylacetonate), [(CH3)2GaNH2]3(dimethylgallium amide), Ga2(NMe2)6(hexakis(dimethylamido)digallium), Me2GaOiPr(dimethylgallium isopropoxide), Ga(OiPr)3(gallium) tri-isopropoxide), [Ga(TMHD)3]([tris (2,2,6,6-tetramethyl-3,5-heptanedionato) gallium(III)]), GaCp (pentamethylcyclopentadienyl gallium), [Ga(thd)3](gallium 2,2,6,6-tetramethyl-3,5-heptanedionate), TMGON (Trimethyl[N-(2-methoxyethyl)-2-methylpropan-2-amine]gallium), It may include one of DMGON (Dimethyl[N-(tert-butyl)-2-methoxy-2-methylpropan-1-amine]gallium) and DMGTN (Dimethyl[N1-(tert-butyl)-N2,N2-dimethylethane-1,2-diamine]gallium). For example, the second reactant may include oxygen plasma (O2plasma). In addition, the second reactant may further include argon (Ar).

[0077] For example, the zinc precursor may include DEZ (diethylzinc). For another example, the zinc precursor may include any one of DMZ (dimethylzinc), ZnCl2 (zinc chloride), Zn(CH3COO)2 (zinc acetate), Zn(eeki)2 (bis[4-((2-ethoxyethyl)imino)-pent-2-en-2-olate]zinc), and BDMPZ (bis-3-(N,N-dimethylamino)propyl zinc). For example, the third reactant may include oxygen plasma (O2plasma). In addition, the reactant may further include argon (Ar).

[0078] The above gallium precursor providing step (S310) - purge step (S320) - the second reactant providing step (S330) - purge step (S340) is the second unit process (2 nd The second unit process (U20) may be defined as a second unit process. The second unit process (U20) may be repeated multiple times. As the second unit process (U20) is performed, a second-first material film (121) may be formed, and as the second unit process (U20) is repeatedly performed, the thickness of the second-first material film (121) may be controlled. For example, the second-first material film (121) may include Ga2O3.

[0079] The above zinc precursor providing step (S350) - purge step (S360) - the third reactant providing step (S370) - purge step (S380) is the third unit process (3 rdThe third unit process (U30) can be defined as a third unit process. The third unit process (U30) can be repeated multiple times. As the third unit process (U30) is performed, a second-second material film (122) can be formed, and as the third unit process (U30) is repeatedly performed, the thickness of the second-second material film (122) can be controlled. For example, the second-second material film (122) can include ZnO.

[0080] That is, the second unit process (U20) and the third unit process (U30) may be performed to form the second material film (120), and thus the second material film (120) may include the second-first material film (121) and the second-second material film (122).

[0081] As the first material film (110) and the second material film (120) are formed, an IGZO material film (100) in which the second material film (120) is laminated on the first material film (110) can be formed. That is, the IGZO material film (100) can be formed on the substrate (S) through a PEALD process. After the IGZO material film (100) is formed, the IGZO material film (100) can be heat-treated (S400).

[0082] According to one embodiment, by controlling the heat treatment temperature of the IGZO material film (100), the repetition rate of the first to third unit processes (U10, U20, U30), and the power of the first to third reactants (oxygen plasma), a two-dimensional electron gas can be formed at the interface (IF) between the first material film (110) and the second material film (120). In addition, by controlling the heat treatment temperature of the IGZO material film (100), the repetition rate of the first to third unit processes (U10, U20, U30), and the power of the first to third reactants (oxygen plasma), the disorder of the arrangement of atoms in the IGZO material film (100) and the oxygen defect rate can be reduced.

[0083] More specifically, the heat treatment temperature of the IGZO material film (100) performed in the step S400 may be controlled to be more than 200°C and less than 300°C. In addition, the number of repetitions of the first unit process: the number of repetitions of the second unit process: the number of repetitions of the third unit process may be controlled to be more than 10:1:1 and less than 14:1:1. In addition, the power of the first to third reactants (oxygen plasma) may be controlled to be more than 70 W and less than 200 W. The IGZO material film (100) formed under the conditions described above may form a two-dimensional electron gas at the interface (IF) between the first material film (110) and the second material film (120), and the degree of disorder in the arrangement of atoms may be reduced so that the arrangement of atoms may have a superlattice structure as illustrated in FIG. 4, and the proportion of oxygen defects may be reduced. In addition, a quantum confinement effect may occur within the IGZO material film (100). Due to this, a transistor in which the IGZO material film (100) is applied as an active film has a 240 cm 2 / Vs can have high mobility.

[0084]

[0085] Above, the IGZO material film and the manufacturing method thereof according to an embodiment of the present invention have been described. Hereinafter, specific experimental examples and characteristic evaluation results of the IGZO material film and the manufacturing method thereof according to an embodiment of the present invention are described.

[0086] Experimental Example 1: Confirmation of the structural characteristics of the IGZO material film.

[0087] An IGZO material film was manufactured using a PEALD method using an indium precursor (DADI), a gallium precursor (TMGa), a zinc precursor (DEZ), and oxygen plasma (O2plasma), with a ratio of In:Ga:Zn=12:1:1. The ratio of In:Ga:Zn=12:1:1 means that the number of repetitions of the first unit process described with reference to Fig. 2: the number of repetitions of the second unit process: the number of repetitions of the third unit process was performed at 12:1:1. More specifically, the PEALD process was performed under the conditions of a temperature of 200°C and a plasma power of 100 W.

[0088] FIG. 5 and FIG. 6 are drawings for explaining the STEM analysis results of the IGZO material film according to Experimental Example 1 of the present invention.

[0089] Referring to FIGS. 5 and 6, the results of STEM (Scanning Transmission Electron Microscopy) analysis of the IGZO material film according to Experimental Example 1 are shown. More specifically, FIG. 5 shows a high-angle annular dark field (HAADF) image of a cross-section, and FIG. 6 shows an intensity profile within the white box area of ​​FIG. 5.

[0090] As can be seen in Fig. 5, the IGZO material film according to Experimental Example 1 clearly shows a distinction between a bright region (InO material film) and a dark region (GaZnO material film). In addition, as can be seen in Fig. 6, the InO material film and the GaZnO material film are spatially separated, and the IGZO material film has a d-spacing of 1.13 nm.

[0091] FIGS. 7 to 9 are drawings for explaining the results of fast Fourier transform analysis of an IGZO material film according to Experimental Example 1 of the present invention.

[0092] Referring to FIG. 7, a diffraction pattern of reciprocal space through a fast Fourier transform (FFT) is shown for the IGZO material film according to the experimental example 1, and referring to FIG. 8, a fast Fourier transform image and an inverse fast Fourier transform image are shown.

[0093] As can be seen in Fig. 7, the IGZO material film according to Experimental Example 1 has an atomically well-aligned structure. In addition, as can be seen in Figs. 8 and 9, a distinct dot pattern in an out-of-plane direction (Region 1) and a wide ring pattern (Region 2) can be confirmed.

[0094]

[0095] Experimental Example 2: Confirmation of the characteristics of a transistor with an IGZO material film applied and the influence of the subsequent heat treatment temperature on the IGZO material film.

[0096] Fig. 10 is a schematic diagram illustrating a transistor and its manufacturing process according to Experimental Example 2 of the present invention.

[0097] Referring to (a) of FIG. 10, a transistor was manufactured that includes a source and a drain spaced apart from each other on a substrate (Substrate+Buffer), an active film (Active) placed on the substrate so that one side is in contact with the source and the other side is in contact with the drain, a gate insulating film (Insulator) placed on the substrate so as to cover the source, the drain, and the active film, and a gate electrode (Gate) placed on the gate insulating film.

[0098] More specifically, referring to (b) of Fig. 10, Si / SiO2 including silicon oxide (Buffer) thermally formed on silicon (Substrate) was used as a substrate, ITO formed by sputtering was used as a source and a drain, the IGZO material film according to Experimental Example 1 was used as an active film, Al2O3 formed by PEALD was used as a gate insulating film, and ITO formed by sputtering was used as a gate electrode. Finally, a transistor including the substrate, source, drain, active film, gate insulating film, and gate electrode was heat-treated to manufacture a transistor according to Experimental Example 2.

[0099] In addition, five sample transistors were manufactured with different final heat treatment temperatures, and each transistor is defined as a transistor according to Experimental Example 2-1 (Ex 2-1), a transistor according to Experimental Example 2-2 (Ex 2-2), a transistor according to Experimental Example 2-3 (Ex 2-3), a transistor according to Experimental Example 2-4 (Ex 2-4), and a transistor according to Experimental Example 2-5 (Ex 2-5), and each heat treatment temperature is organized in below.

[0100] In addition, the active films included in each transistor are defined as an IGZO material film (Ex 2-1) according to Experimental Example 2-1, an IGZO material film (Ex 2-2) according to Experimental Example 2-2, an IGZO material film (Ex 2-3) according to Experimental Example 2-3, an IGZO material film (Ex 2-4) according to Experimental Example 2-4, and an IGZO material film (Ex 2-5) according to Experimental Example 2-5.

[0101] Heat treatment temperature experiment example 2-1 (Ex 2-1) 200℃ Experiment example 2-2 (Ex 2-2) 250℃ Experiment example 2-3 (Ex 2-3) 300℃ Experiment example 2-4 (Ex 2-4) 350℃ Experiment example 2-5 (Ex 2-5) 400℃

[0102] FIG. 11 is a drawing for comparing various electrical characteristics of transistors according to experimental examples 2-1 to 2-5 of the present invention, FIG. 12 is a drawing for specifically comparing the mobility of transistors according to experimental examples 2-1 to 2-5 of the present invention, and FIG. 13 is a drawing for explaining the transfer curve of each transistor according to experimental examples 2-1 to 2-5 of the present invention.

[0103] Referring to FIGS. 11 to 13, the electrical characteristics of each of the transistors (Ex 2-1 to Ex 2-5) according to Experimental Examples 2-1 to 2-5 are measured and shown. The measured results are summarized in below.

[0104] Category V th [V]Hysteresis[V]μ FE [cm 2 / Vs]SS [mV / decade]Ex 2-11.29±0.050.06±0.0140.27±3.52112.91±6.52Ex 2-20.17±0.120.02±0.02245.06±15.8574.05±6.94Ex 2-3-0.18±0.080.02±0.01148.63±12.7672.72±5.30Ex 2-4-2.14±0.340.00±0.00138.44±17.6282.08±5.38Ex 2-5NANANANA

[0105] As can be seen in FIGS. 11 to 13 and , it can be confirmed that the transistor (Ex 2-2) according to the above experimental example 2-2 heat-treated at a temperature of 250°C exhibits a high mobility of 240 or higher (245.06±15.85). However, it can be confirmed that the transistor (Ex 2-1) according to the above experimental example 2-1 heat-treated at a temperature of 200°C and the transistor (Ex 2-3) according to the above experimental example 2-3 heat-treated at a temperature of 300°C have significantly reduced mobility compared to the transistor (Ex 2-2) according to the above experimental example 2-2 (Ex 2-1: 40.27±3.52, Ex 2-2: 245.06±15.85, Ex 2-3: 148.63±12.76). In particular, it can be confirmed that the transistor (Ex 2-5) according to the above experimental example 2-5, which was heat-treated at a temperature of 400℃, is deteriorated and its electrical characteristics do not appear.

[0106] That is, it can be seen that the transistor to which the IGZO material film is applied can have significantly improved mobility through subsequent heat treatment, but the heat treatment temperature must be controlled to be above 200°C and below 300°C. In addition, it can be seen that a two-dimensional electron gas is formed at the interface between the first material film (InO) and the second material film (GaZnO) within the IGZO material film through the significant improvement in mobility.

[0107] Figure 14 is a drawing for comparing the metal content in the IGZO material film according to Experimental Examples 2-1 to 2-5 of the present invention.

[0108] Referring to Fig. 14, the results of confirming the metal content by performing XRF (X-Ray Fluorescence Spectrometry) analysis on each of the IGZO material films (Ex 2-1 to Ex 2-5) according to Experimental Examples 2-1 to 2-5 are shown. As can be confirmed in Fig. 14, it can be confirmed that the contents of indium (In), gallium (Ga), and zinc (Zn) in the IGZO material film are maintained substantially constant regardless of the subsequent heat treatment temperature of the IGZO material film.

[0109] FIG. 15 is a drawing for comparing the oxygen ratio in the IGZO material film according to Experimental Examples 2-1 to 2-5 of the present invention, and FIG. 16 is a drawing for comparing the oxygen defect ratio in the IGZO material film according to Experimental Examples 2-1 to 2-5 of the present invention.

[0110] Referring to FIGS. 15 and 16, the results of XPS (X-ray Photoelectron Spectrometry) analysis are shown for each of the IGZO material films (Ex 2-1 to Ex 2-5) according to Experimental Examples 2-1 to 2-5. More specifically, FIG. 15 shows the oxygen ratio (Oxygen ratio, %) in the IGZO material film, and FIG. 16 shows the oxygen defect ratio through the O 1s spectra.

[0111] As can be seen in FIGS. 15 and 16, the transistor (Ex 2-2) according to Experimental Example 2-2, which was heat-treated at a temperature of 250°C, can be seen to have the highest oxygen ratio and the lowest oxygen defect ratio. However, the transistor (Ex 2-1) according to Experimental Example 2-1, which was heat-treated at a temperature of 200°C, and the transistor (Ex 2-3) according to Experimental Example 2-3, which was heat-treated at a temperature of 300°C, can be seen to have a decreased oxygen ratio and an increased oxygen defect ratio compared to the transistor (Ex 2-2) according to Experimental Example 2-2.

[0112] Figure 17 is a drawing for explaining oxygen desorption according to the heat treatment temperature of an IGZO material film.

[0113] Referring to Fig. 17, the results of confirming oxygen desorption through TDS signal measurement according to the subsequent heat treatment temperature (100 to 600°C) of the IGZO material film are shown. As can be confirmed in Fig. 17, it can be confirmed that oxygen desorption increases as the IGZO material film is heat treated at a temperature of 300°C or higher.

[0114] That is, as can be confirmed in FIGS. 15 to 17, as the IGZO material film is subsequently heat-treated at a temperature exceeding 200°C and less than 300°C, the proportion of oxygen defects in the IGZO material film can be reduced, thereby improving the electrical characteristics of the IGZO material film.

[0115] Figures 18 to 20 are drawings for explaining the GIWAXS analysis results of IGZO material films according to Experimental Examples 2-1 to 2-5 of the present invention.

[0116] Referring to FIG. 18, the GIWAXS 2D pattern for each of the IGZO material films according to Experimental Examples 2-1 to 2-5 is shown, and referencing FIG. 19, the 1D out-of-plane scattering profile is shown, and referencing FIG. 20, the maximum peak intensity in the layer structure region is shown.

[0117] As can be seen in Fig. 18, two types of diffraction patterns are observed: a distinct dot pattern (Region 1) in the out-of-plane direction and a wide ring pattern (Region 2). In addition, as can be seen in Figs. 19 and 20, it can be seen that the IGZO material film (Ex 2-2) according to Experimental Example 2-2 heat-treated at a temperature of 250°C exhibits the highest peak. Accordingly, it can be seen that the degree of disorder can be reduced by controlling the subsequent heat treatment temperature of the IGZO material film to be higher than 200°C and lower than 300°C.

[0118]

[0119] Experimental Example 3: Confirmation of the Effect of the In:Ga:Zn Cycle Ratio on the Formation of IGZO Films

[0120] As described with reference to Fig. 10, three sample transistors were manufactured by forming transistors with different In:Ga:Zn ratios for forming the IGZO material film (active film).

[0121] Each transistor is defined as a transistor according to Experimental Example 3-1 (Ex 3-1), a transistor according to Experimental Example 3-2 (Ex 3-2), and a transistor according to Experimental Example 3-3 (Ex 3-3), and the In:Ga:Zn ratio is organized in below.

[0122] In addition, the active films included in each transistor are defined as an IGZO material film (Ex 3-1) according to Experimental Example 3-1, an IGZO material film (Ex 3-2) according to Experimental Example 3-2, and an IGZO material film (Ex 3-3) according to Experimental Example 3-3. The In:Ga:Zn ratio refers to the ratio of the number of repetitions of the first unit process described with reference to FIG. 2: the number of repetitions of the second unit process: the number of repetitions of the third unit process.

[0123] In:Ga:Zn ratioExperimental example 3-1 (Ex 3-1) 10:1:1Experimental example 3-2 (Ex 3-2) 12:1:1Experimental example 3-3 (Ex 3-3) 14:1:1

[0124] FIG. 21 is a drawing for comparing transfer curves of transistors according to experimental examples 3-1 to 3-3 of the present invention, FIG. 22 is a drawing for comparing various electrical characteristics of transistors according to experimental examples 3-1 to 3-3 of the present invention, and FIG. 23 is a drawing for comparing output characteristics of transistors according to experimental examples 3-1 to 3-3 of the present invention.

[0125] Referring to FIGS. 21 to 23, the electrical characteristics of each of the transistors (Ex 3-1 to Ex 3-3) according to Experimental Examples 3-1 to 3-3 are measured and shown. The measured results are summarized in below.

[0126] Category V th [V]μ FE [cm 2 / Vs]SS [mV / dec.]Ex 3-10.28±0.1154.11±3.9494.74±8.84Ex 3-2-0.44±0.13114.31±6.9689.79±10.98Ex 3-30.03±0.0389.79±10.98103.75±7.76

[0127] As can be seen in FIGS. 21 to 23 and , it can be confirmed that the transistor (Ex 3-2) according to the experimental example 3-2 formed at a ratio of In:Ga:Zn=12:1:1 exhibits a high mobility of 114 or more (114.31±6.96). However, it can be confirmed that the transistor (Ex 3-1) according to the experimental example 3-1 formed at a ratio of In:Ga:Zn=10:1:1 and the transistor (Ex 3-3) according to the experimental example 3-3 formed at a ratio of In:Ga:Zn=14:1:1 have significantly reduced mobility compared to the transistor (Ex 3-2) according to the experimental example 3-2 (Ex 3-1: 54.11±3.94, Ex 3-2: 114.31±6.96, Ex 3-3: 89.79±10.98).

[0128] That is, it can be seen that the transistor to which the IGZO material film is applied can significantly improve mobility by controlling the In:Ga:Zn ratio, but the In:Ga:Zn ratio must be controlled to be greater than 10:1:1 and less than 14:1:1.

[0129]

[0130] Experimental Example 4: Confirmation of the Effect of Oxygen Plasma Power on IGZO Film Formation

[0131] As described with reference to Fig. 10, four sample transistors were manufactured by forming a transistor, but with different powers of oxygen plasma for forming an IGZO material film (active film).

[0132] Each transistor is defined as a transistor according to Experimental Example 4-1 (Ex 4-1), a transistor according to Experimental Example 4-2 (Ex 4-2), a transistor according to Experimental Example 4-3 (Ex 4-3), and a transistor according to Experimental Example 4-4 (Ex 4-4), and the oxygen plasma power is organized through below.

[0133] Oxygen plasma power experiment example 4-1 (Ex 4-1) 70W Experiment example 4-2 (Ex 4-2) 100W Experiment example 4-3 (Ex 4-3) 200W Experiment example 4-4 (Ex 4-4) 300W

[0134] FIG. 24 is a drawing for comparing transfer curves of transistors according to experimental examples 4-1 to 4-4 of the present invention, FIG. 25 is a drawing for comparing various electrical characteristics of transistors according to experimental examples 4-1 to 4-4 of the present invention, and FIG. 26 is a drawing for comparing output characteristics of transistors according to experimental examples 4-1 to 4-4 of the present invention.

[0135] Referring to FIGS. 24 to 26, the electrical characteristics of each of the transistors (Ex 4-1 to Ex 4-4) according to Experimental Examples 4-1 to 4-4 are measured and shown. The measured results are summarized in below.

[0136] Category V th [V]μ FE [cm 2 / Vs]SS [mV / dec.]Ex 4-1-1.48±0.16130.62±8.55114.05±27.41Ex 4-2-0.44±0.13114.31±6.9689.79±10.98Ex 4-3-0.38±0.07108.11±6.6794.25±12.53Ex 4-41.00±0.1238.23±0.97112.86±11.11

[0137] As can be seen in FIGS. 24 to 26 and , it can be confirmed that the transistor (Ex 4-2) according to the above experimental example 4-2 formed with an oxygen plasma power of 100 W exhibits a low subthreshold swing (SS) value (89.79±10.98). However, it can be confirmed that the SS value of the transistor (Ex 4-1) according to the above experimental example 4-1 formed with an oxygen plasma power of 70 W and the transistor (Ex 4-3) according to the above experimental example 4-3 formed with an oxygen plasma power of 200 W is significantly improved compared to the transistor (Ex 4-2) according to the above experimental example 4-2 (Ex 4-1: 114.05±27.41, Ex 4-2: 89.79±10.98, Ex 4-3: 94.25±12.53).

[0138] That is, it can be seen that the transistor to which the IGZO material film is applied can reduce the SS value through oxygen plasma power control, but the oxygen plasma power must be controlled to be more than 70 W and less than 200 W.

[0139]

[0140] Experimental Example 5: Thermodynamic Behavior of IGZO Films Through Atomic-Scale Analysis

[0141] After manufacturing an IGZO material film according to the method of Experimental Example 1, two sample IGZO material films were manufactured by subsequent heat treatment at different temperatures. Each sample IGZO material film is defined as an IGZO material film according to Experimental Example 5-1 (Ex 5-1) and an IGZO material film according to Experimental Example 5-2 (Ex 5-2), and the subsequent heat treatment temperatures are summarized in below.

[0142] Post-treatment temperature experiment Example 5-1 (Ex 5-1) 250℃ Experiment Example 5-2 (Ex 5-2) 400℃

[0143] Figure 27 is a drawing for explaining the AIMD simulation results and TEM analysis results of the IGZO material film according to Experimental Examples 5-1 and 5-2 of the present invention.

[0144] Referring to (a) of Fig. 27, the InOx / GaOx / ZnOx interface atomic structure is shown through the AIMD (Ab-Initio Molecular Dynamics) simulation of the IGZO material film (Ex 5-1) according to the experimental example 5-1, and referring to (b) of Fig. 27, the InOx / GaOx / ZnOx interface atomic structure is shown through the AIMD simulation of the IGZO material film (Ex 5-2) according to the experimental example 5-2. More specifically, the AIMD simulation was performed for 5 ps at a time interval of 2 fs.

[0145] Referring to (c) of FIG. 27, a TEM (Transmission Electron Microscopy) image of an IGZO material film (Ex 5-1) according to the above experimental example 5-1 is shown, and referring to (d) of FIG. 27, a TEM image of an IGZO material film (Ex 5-2) according to the above experimental example 5-2 is shown.

[0146] As can be seen in (a) to (d) of Fig. 27, the nano-stacked periodicity of the IGZO material film was maintained at a subsequent heat treatment temperature of 250°C, but a disordered arrangement of atoms was observed at a subsequent heat treatment temperature of 400°C. These simulation results are confirmed to be consistent with the TEM images confirmed through (c) and (d) of Fig. 27.

[0147]

[0148] Experimental Example 6: Confirmation of the occurrence of quantum confinement effects within an IGZO material film.

[0149] An IGZO material film having an ordered structure in which atoms are regularly and periodically arranged and an IGZO material film having a disorderly stacked structure were prepared. The IGZO material film having an ordered structure is defined as an IGZO material film (Ex 6-1) according to Experimental Example 6-1, and the IGZO material film having a disorderly stacked structure is defined as an IGZO material film (Ex 6-2) according to Experimental Example 6-2.

[0150] FIG. 28 is a drawing for explaining the atomic structure model and electrostatic potential plot of the IGZO material film according to Experimental Examples 6-1 and 6-2 of the present invention.

[0151] Referring to Fig. 28, the atomic structure model and electrostatic potential plot calculated using DFT (Density Functional Theory) for the IGZO material film (Ordered) according to Experimental Example 6-1 and the IGZO material film (Disordered) according to Experimental Example 6-2 are shown. The thick line represents the macroscopic average potential in the c-axis direction, and the transparent line represents the plane average potential.

[0152] As can be seen in Fig. 28, in the IGZO material film (ordered) model according to Experimental Example 6-1, a quantum well-like structure was observed because the electrostatic potential of the intact GaZnO layer was higher than that of the InO layer. This phenomenon is similar to the effect found in the InGaO3(ZnO)3 superlattice.

[0153] Figure 29 is a drawing visualizing the charge density distribution of the IGZO material film according to Experimental Examples 6-1 and 6-2 of the present invention.

[0154] Referring to Fig. 29, the charge density distribution calculated by DFT at the minimum level of the conduction band of the atomic structure model for each of the IGZO material film (Ordered) according to Experimental Example 6-1 and the IGZO material film (Disordered) according to Experimental Example 6-2 is visualized.

[0155] As can be seen in Figure 29, the ordered model (Experimental Example 6-1) forms a 2D-like channel, while the disordered model (Experimental Example 6-2) forms a 3D-like channel.

[0156] Figure 30 is a drawing for establishing the band alignment of the IGZO material film according to Experimental Example 6-1 of the present invention.

[0157] Referring to Fig. 30, the band alignment of In2O3 and GaZnO is shown to explain the formation of a quantum well structure in the IGZO material film according to Experimental Example 6-1. In addition, Fig. 30 includes the XPS atomic spectrum of EF-EV, ultraviolet photoelectron spectroscopy (UPS) of the work function, and spectroscopic ellipsometry (SE) of the band gap.

[0158] As can be confirmed through Fig. 30, it can be confirmed that a quantum confinement effect occurred within the IGZO material film according to the above experimental example 6-1, which suggests that a two-dimensional electron gas was formed at the interface between the In2O3 material film and the GaZnO material film within the quantum well created by band bending.

[0159] FIG. 31 and FIG. 32 are drawings for explaining the temperature-related transmission characteristics of a transistor to which an IGZO material film according to Experimental Example 6-1 of the present invention is applied.

[0160] Referring to FIGS. 31 and 32, the transistor to which the IGZO material film according to Experimental Example 6-1 was applied as an active film was subjected to subsequent heat treatment at a temperature of 250°C, and then the transfer characteristics were measured at temperatures ranging from 83 to 298 K. More specifically, FIG. 32 shows an Arrhenius plot of field-effect mobility, and FIG. 33 shows a field-effect mobility-gate voltage curve.

[0161] As can be seen in FIGS. 31 and 32, the temperature-related transport characteristics of the transistor with the aligned IGZO material film clearly reveal the carrier quantum configuration within the aligned IGZO material film. This indicates that trap-free and temperature-independent carrier transport occurs due to the presence of a two-dimensional electron gas formed at the interface between the In2O3 material film and the GaZnO material film.

[0162] Also, as can be seen in Fig. 32, due to the amorphous nature, some thermally activated carriers undergo freezing behavior, which slightly reduces their mobility and causes positive mobility. However, even at a low temperature of 83 K, the 200 cm 2 It can be confirmed that the IGZO material film according to the embodiment of the present invention maintains a sharp mobility profile that continuously exceeds / Vs. Therefore, it can be seen that the quantum confinement effect occurs due to the well-ordered superlattice structure.

[0163]

[0164] Experimental Example 7: Comparison of properties according to the arrangement of atoms in an IGZO material film.

[0165] Figure 33 is a drawing for explaining the arrangement state of atoms in an IGZO material film according to Experimental Example 7 of the present invention.

[0166] Referring to Fig. 33, four different arrangement states of atoms in the IGZO material film are shown. Specifically, an IGZO material film (FO) having a fully ordered arrangement of atoms, an IGZO material film (SO) having a semi-ordered arrangement, an IGZO material film (PD) having a partially disordered arrangement, and an IGZO material film (FD) having a fully disordered arrangement were prepared.

[0167] Figure 34 is a drawing for explaining the formation of a potential well according to the arrangement state of atoms in an IGZO material film.

[0168] Referring to Fig. 34, the formation state of a potential well is shown for each of the IGZO material films having the four arrangement states (FO, SO, PD, FD) described above. A potential well refers to a well where electrons can gather to cause high mobility. As can be seen in Fig. 34, it can be confirmed that the formation of a potential well is facilitated as the degree of disorder decreases (FD->PD->SO->FO).

[0169] Figure 35 is a drawing for explaining the change in the movement path of electrons according to the arrangement state of atoms in an IGZO material film.

[0170] Referring to Fig. 35, electron movement paths are shown for each of the IGZO material films having the four arrangement states (FO, SO, PD, FD) described above. As can be seen in Fig. 35, as the degree of disorder decreases (FD->PD->SO->FO), the movement paths of electrons are confirmed to be aligned in the In2O3 material film.

[0171] Figure 36 is a drawing for explaining the average distance distribution between metals according to the arrangement state of atoms in an IGZO material film.

[0172] Figure 36 (a) shows the average distance distribution between In-In, Figure 36 (b) shows the average distance distribution between Ga-Ga, and Figure 36 (c) shows the average distance distribution between Zn-Zn. In addition, the average distance distribution was expressed through the calculation of g(r). g(r) refers to a function that shows how the atomic distribution density varies according to distance. The results measured in Figure 36 are summarized in below.

[0173] DivisionFOSOPDFDIng(3.44)=6.41g(3.43)=6.07g(3.43)=3.33g(3.41)=3.23Gag(3.25)=11.99g(3.4 1)=12.9g(3.39)=8.72g(3.35)=2.97Zng(3.32)=11.4g(3.55)=8.09g(3.19)=6.46g(3.11)=4.93

[0174] While the present invention has been described in detail using preferred embodiments, the scope of the present invention is not limited to the specific embodiments described above, and should be interpreted in accordance with the appended claims. Furthermore, those skilled in the art will appreciate that numerous modifications and variations are possible without departing from the scope of the present invention.

[0175] The present invention can be used in the semiconductor industry.

Claims

1. Step for preparing the substrate; A step of providing an indium (In) precursor and a first reactant on the substrate to form a first material film including indium; A step of providing a gallium (Ga) precursor, a second reactant, a zinc (Zn) precursor, and a third reactant on the first material film to form a second material film including gallium and zinc; and Including a step of heat-treating an IGZO material film in which the second material film is formed on the first material film, A method for manufacturing an IGZO material film, comprising forming a two-dimensional electron gas between the first material film and the second material film by controlling the heat treatment temperature of the IGZO material film.

2. In paragraph 1, A method for manufacturing an IGZO material film, comprising forming a two-dimensional electron gas between the first material film and the second material film as the IGZO material film is heat-treated at a temperature of more than 200°C and less than 300°C.

3. In paragraph 1, A method for manufacturing an IGZO material film, comprising reducing the degree of disorder of the arrangement of atoms in the IGZO material film by heat-treating the IGZO material film at a temperature exceeding 200°C and less than 300°C.

4. In paragraph 1, A method for manufacturing an IGZO material film, comprising reducing the oxygen defect ratio in the IGZO material film by heat-treating the IGZO material film at a temperature exceeding 200°C and less than 300°C.

5. In paragraph 1, The first material film is formed through a first unit process of providing the indium precursor and the first reactant on the substrate, A method for manufacturing an IGZO material film, comprising forming the second material film through a second unit process of providing the gallium precursor and the second reactant on the first material film and a third unit process of providing the zinc precursor and the third reactant on the first material film.

6. In paragraph 5, A method for manufacturing an IGZO material film, wherein the number of repetitions of the first unit process: the number of repetitions of the second unit process: the number of repetitions of the third unit process are controlled at a ratio of more than 10:1:1 and less than 14:1:

1.

7. In paragraph 5, The first unit process includes a step of providing the indium precursor on the substrate and a step of providing the first reactant on the substrate on which the indium precursor is provided. The second unit process includes a step of providing the gallium precursor on the first material film and a step of providing the second reactant on the first material film on which the gallium precursor is provided. A method for manufacturing an IGZO material film, wherein the third unit process includes a step of providing the zinc precursor on the first material film and a step of providing the third reactant on the first material film on which the zinc precursor is provided.

8. In paragraph 1, A method for manufacturing an IGZO material film, wherein the first to third reactants all contain oxygen plasma (O2plasma).

9. In paragraph 8, A method for manufacturing an IGZO material film, wherein the power of the oxygen plasma is controlled to be greater than 70 W and less than 200 W.

10. A first material film containing indium (In) and oxygen (O); and A second material film comprising gallium (Ga), zinc (Zn), and oxygen (O), An IGZO material film comprising a two-dimensional electron gas formed between the first material film and the second material film.

11. In paragraph 10, An IGZO material film including an arrangement of atoms within the IGZO material film having a superlattice structure.

12. In paragraph 10, An IGZO material film including a quantum confinement effect occurring within the IGZO material film.

13. Source and drain arranged spaced apart from each other on the substrate; An IGZO material film disposed on the substrate such that one side is in contact with the source and the other side is in contact with the drain; A gate insulating film disposed on the substrate to cover the source, the drain, and the IGZO material film; and Including a gate electrode disposed on the gate insulating film, The above IGZO material film includes a first material film containing indium (In) and oxygen (O), and a second material film containing gallium (Ga), zinc (Zn), and oxygen (O). A transistor comprising a two-dimensional electron gas formed between the first material film and the second material film.

14. In paragraph 13, 240 cm 2 A transistor comprising a mobility of / Vs or greater.

Images