Improved wafer temperature uniformity via localized increase in substrate contact surface area density

Abstract

A substrate support to support a substrate in a processing chamber includes: a body including seal bands, where the seal bands are configured to contact the substrate and define a seal band area; first mesas extending upward from the body and configured to contact the substrate; and second mesas extending upward from the body in the seal band area and configured to contact the substrate. The second mesas have a higher contact surface area density than the first mesas.

Description

Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WOIMPROVED WAFER TEMPERATURE UNIFORMITY VIA LOCALIZED INCREASE IN SUBSTRATE CONTACT SURFACE AREA DENSITYCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 686,240 filed on August 23, 2024. The entire disclosure of the above application is incorporated herein by reference.FIELD

[0002] The present disclosure relates to substrate supports of substrate processing systems.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] A process chamber of a substrate processing system includes one or more process stations for performing deposition and etch treatments on substrates such as semiconductor wafers, which are supported by substrate supports. For example, deposition may be performed to deposit conductive film, dielectric film, or other types of film using chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), plasma enhance ALD (PEALD), and / or other deposition processes. As an example, etching may be performed to remove material from one or more layers and include atomic layer etching (ALE), high aspect ratio (HAR) etching, plasma etching, and / or other etch processes. During deposition, a substrate is arranged on a substrate support (e.g., a pedestal) and one or more precursor gases may be supplied to a process chamber using a gas distribution device (e.g., a showerhead) during one or more process steps. In a PECVD or PEALD process, plasma is used to activate chemical reactions within the process chamber during deposition. Additional examples of processes that may be performed on a substrate include, but are not limited to, dielectric etching, chemical etching, plasma etching, reactive ion etching, and cleaningAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO processes. During the deposition and etching processes, gas mixtures are introduced into the process chamber via showerheads, and plasma is struck to activate chemical reactions. During the cleaning processes, gases may also be introduced via the showerheads.

[0005] A substrate support may include one or more heating elements and / or one or more cooling channels. Prior to or during the stated processes the one or more heat elements may be heated and / or coolant may be circulated through the one or more cooling channels to adjust temperatures of the substrate being processed. Temperatures of the heating elements and coolant may be adjusted based on detected temperatures of the substrate support and / or temperatures in the corresponding processing chamber.SUMMARY

[0006] A substrate support to support a substrate in a processing chamber is disclosed. The substrate support includes: a body including seal bands, where the seal bands are configured to contact the substrate and define a seal band area; first mesas extending upward from the body and configured to contact the substrate; and second mesas extending upward from the body in the seal band area and configured to contact the substrate. The second mesas have a higher contact surface area density than the first mesas.

[0007] In other features, the first mesas are disposed radially inward of the second mesas. In other features, the first mesas are disposed radially inward of the seal band area. In other features, a size of each of the second mesas is larger than a size of each of the first mesas. In other features, a contact surface area of each of the second mesas is larger than a contact surface area of each of the first mesas.

[0008] In other features, a quantity of the second mesas in a first region of the substrate support is greater than a quantity of the first mesas in a second region of the substrate support, where the first region and the second region are equal in size.

[0009] In other features, some of the second mesas are distanced closer to each other than other ones of the second mesas. In other features, some of the second mesas have a higher contact surface area density than other ones of the second mesas and are located adjacent to at least one of an upward extending planar side of the substrate support and a linear portion of one of the seal bands.Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO

[0010] In other features, the substrate support further includes third mesas extending upward from the body and having a higher contact surface area density than the first mesas. In other features, the second mesas are arranged in a series. In other features, some of the second mesas are arranged in an annular series. In other features, the second mesas are arranged in a semi-annular series and some of the second mesas are arranged in a linear series. In other features, the third mesas are in the seal band area.

[0011] In other features, the third mesas have a lower contact surface area density than the second mesas. In other features, the third mesas are disposed radially inward of the second mesas. In other features, the substrate support further includes fourth mesas arranged in the seal band area.

[0012] In other features, the third mesas are radially inward of the seal band area. In other features, the third mesas are adjacent and are arranged along the seal band area. In other features, the second mesas are islands that are at least one of rectangular shaped and square shaped. In other features, the second mesas have a contact surface area density of 80-90% in the seal band area.

[0013] In other features, the second mesas are islands that are at least one of rectangular shaped and square shaped. The second mesas have a contact surface area density of 80-90% in the seal band area.

[0014] In other features, the second mesas are islands that are at least one of rectangular shaped and square shaped. Each of the second mesas have a width of 0.5- 5.0 millimeters and a length of 2-10 millimeters.

[0015] In other features, the second mesas are islands that are at least one of rectangular shaped and square shaped. Some of the second mesas are arranged in a linear series that is adjacent to at least one of an upward extending planar side of the substrate support and a linear portion of one of the seal bands. Others of the second mesas are arranged in an annular series. In other features, the first mesas are cylindrical shaped and are radially inward of the seal band area.

[0016] In other features, the first mesas have a contact surface area density of 10-20% in an area radially inward of the seal band area. The second mesas have a contact surface area density of 80-90% in the seal band area.Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO

[0017] In other features, the first mesas are islands that are at least one of rectangular shaped and square shaped. The second mesas are islands that are at least one of rectangular shaped and square shaped.

[0018] In other features, the substrate support further includes third mesas. The first mesas are cylindrically shaped. The second mesas are islands that are at least one of rectangular shaped and square shaped and are arranged in a semi-annular series. The third mesas are islands that are at least one of rectangular shaped and square shaped and are arranged in an annular series.

[0019] In other features, the second mesas are triangular shaped mesas. In other features, the second mesas include: third mesas pointing radially inward; and fourth mesas pointing radially outward. In other features, each of the fourth mesas is disposed between two adjacent ones of the third mesas.

[0020] In other features, the second mesas is arranged in a series and alternating pattern, where every other one of the second mesas points radially inward and every other one of the second mesas points radially outward.

[0021] In other features, a substrate support to support a substrate in a processing chamber is disclosed. The substrate support includes: a body including seal bands, wherein the seal bands are configured to contact the substrate and define a seal band area; first mesas extending upward from the body and configured to contact the substrate, wherein the first mesas are radially inward of the seal band area; and a semiannular band disposed in the seal band area between the seal bands and configured to contact the substrate.

[0022] In other features, the semi-annular band has a higher contact surface area density than the first mesas. In other features, the semi-annular band has a zigzag pattern.

[0023] In other features, the semi-annular band includes: a linear portion adjacent to at least one of an upward extending planar side of the substrate support and a linear portion of one of the seal bands; and an annular shaped portion disposed away from the planar side of the substrate support. In other features, the semi-annular band includes intertwin channels configured to disperse cooling gas in the seal band area.

[0024] In other features, a first portion of the semi-annular band is disposed adjacent to at least one of an upward extending planar side of the substrate support and a linearAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO portion of one of the seal bands and has a first width. A second portion of the semiannular band that is disposed away from the planar side of the substrate support has a second width. The second width is greater than the first width.

[0025] In other features, the semi-annular band is continuous. In other features, the semi-annular band includes passthrough channels configured to pass cooling gas radially across the semi-annular band. In other features, the semi-annular band is discontinuous.

[0026] In other features, the semi-annular band includes: first intertwin channels; and second intertwin channels. In other features, the first intertwin channels extend radially inward from the semi-annular band; and the second intertwin channels extend radially outward from the semi-annular band.

[0027] In other features, a first portion of the semi-annular band adjacent to a linear portion of one of the seal bands has a first thickness. A second portion of the semiannular band is disposed away from an upward extending planar side of the substrate support and has a second thickness that is different than the first thickness.

[0028] In other features, the substrate support further includes second mesas disposed adjacent and outside of the seal band area, wherein a contact surface area density of the second mesas is greater than a contact surface area density of the first mesas.

[0029] In other features, a substrate support to support a substrate in a processing chamber is disclosed. The substrate support includes: a body; first mesas extending upward from the body, configured to contact the substrate, and arranged in a localized region of the substrate support; and second mesas extending upward from the body and configured to contact the substrate. The second mesas are outside the localized region and have a lower contact surface area density than the first mesas. The second mesas at least one of surround the first mesas and include third mesas arranged radially inward of the localized region and fourth mesas arranged radially outward of the localized region.

[0030] In other features, the second mesas surround the first mesas. In other features, the second mesas include the third mesas and the fourth mesas. In other features, the first mesas are clustered in the localized region. In other features, the first mesas are cylindrically shaped.

[0031] In other features, the substrate support further includes: seal bands, where the seal bands are configured to contact the substrate and define a seal band area; and fifthAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO mesas in the seal band area. In other features, the seal band area is radially outward of the first mesas and the second mesas.

[0032] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0034] FIG. 1 is a functional block diagram of an example substrate processing system including a substrate support having a pattern of mesas with localized and increased mesa contact surface area density in accordance with the present disclosure;

[0035] FIG. 2 is a top-cut-away view through a substrate and showing a portion of an example mesa pattern of a substrate support including a semi-annular series of mesas in a seal band area and a radially inner annular series of mesas near the seal band area having increased mesa contact surface area density as compared to other mesas of the substrate support in accordance with the present disclosure;

[0036] FIG. 3 is a top-cut-away view through a substrate and showing a portion of an example mesa pattern of a substrate support including a semi-annular series of mesas in a seal band area including increased mesa contact surface area density near a planar side of the substrate support and a radially inward annular cooling groove in accordance with the present disclosure;

[0037] FIG. 4 is a top-cut-away view through a substrate and showing a portion of an example mesa pattern of a substrate support including multiple semi-annular series of mesas in a seal band area with increasing mesa contact surface area density in a radial direction in accordance with the present disclosure;

[0038] FIG. 5 is a top-cut-away view through a substrate and showing a portion of an example mesa pattern of a substrate support including a semi-annular series of mesas in a seal band area including increased mesa contact surface area density near a planar side of the substrate support and a radially outward semi-annular cooling groove in accordance with the present disclosure;Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO

[0039] FIG. 6A is a top-cut-away view through a substrate and showing a portion of an example mesa pattern of a substrate support including a semi-annular series of slot mesas (or rectangular-shaped “islands”) in a seal band area in accordance with the present disclosure;

[0040] FIG. 6B is a cross-sectional view at section line A-A of FIG. 6A illustrating corresponding mesa, cooling groove, and seal band dimensions in accordance with the present disclosure;

[0041] FIG. 7 is a top-cut-away view through a substrate and showing a portion of an example mesa pattern of a substrate support including a semi-annular series of triangular mesas (or triangular-shaped “islands”) in a seal band area in accordance with the present disclosure;

[0042] FIG. 8 is a top-cut-away view through a substrate and showing a portion of an example mesa pattern of a substrate support including a zigzag shaped semi-annular band in a seal band area in accordance with the present disclosure;

[0043] FIG. 9 is a top-cut-away view through a substrate and showing a portion of an example mesa pattern of a substrate support including multiple series of slot mesas in accordance with the present disclosure; and

[0044] FIG. 10 is a top-cut-away view through a substrate and showing a portion of an example mesa pattern of a substrate support including a semi-annular series of slot mesas and an increased number of mesas in a localized area in accordance with the present disclosure.

[0045] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0046] A substrate support (e.g., an electrostatic chuck) can include a body, which may be monolithic or include multiple stacked plates. The body may include heating elements and / or cooling channels, which can cause temperature nonuniformities in local areas of the body. The body may include a planar side surface, which is used for substrate alignment. A substrate can include a linear outer peripheral side edge, which is aligned to the planar side surface of the body. Temperature nonuniformities can also exist in and near the planar side surface of the substrate support. As an example, temperatures in aAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO region adjacent to the planar side surface can be hotter than areas near the adjacent region.

[0047] Other temperature non-uniformities can occur in the substrate support body due to process chamber geometry and non-symmetrical nature of the substrate support and substrate. For example, heat load on the substrate and heat extraction from the substrate can be radially and azimuthally non-uniform, which causes temperatures laterally across the substrate to be non-uniform. This can result in yield loss.

[0048] The examples set forth herein improve substrate temperature uniformity via increases in localized substrate contact surface densities to compensate for temperature nonuniformities due to nonsymmetrical substrate support geometry, substrate support heating and / or cooling nonuniformities, and plasma temperature nonuniformities. The phrase “contact surface area density” refers to a total contact surface area of a substrate support that contacts a substrate in a given region of the substrate support and relative to (or divided by) a total lateral area of the given region. Contact surface area density is an indicator of how much laterally extending surface area of a substrate support within a given region is in contact with a substrate versus how much laterally extending surface area of a substrate support within the given region is not in contact with the substrate. The total contact surface area may include top contact surfaces of mesas contacting the substrate in the given region, top contact surface portions of seal bands contacting the substrate in the given region, and / or top contact surface portions of one or more other bands contacting the substrate in the given region.

[0049] As an example, a region may refer to an area between and / or including portions of two seal bands. A region may refer to an area between seal bands and adjacent a linear portion of a seal band. A region may refer to an area covered by a radial annular range. As a few examples, for a 300-millimeter (mm) diameter substrate support, the radial annular range may be 0-20mm, 50-70mm, 90-1 10mm, 140-147mm, etc. from a center of the substrate support, where 0mm refers to the center of the substrate support and 300mm is a radius of a radial outer edge of the substrate support. The radial annular ranges may be different for different sized substrate supports. The region may be ring shaped, circular shaped, or non-circular in shape. A mesa contact surface area density refers to a total contact surface area of mesas contacting a substrate in a given region of the substrate support and relative to a total lateral area of that region.Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO

[0050] The examples disclosed herein include substrate supports with varying contact surface area densities laterally across the substrate supports. Contact surface area density is higher in localized areas where higher temperatures can occur and lower in other areas where lower temperatures can occur. Some of the examples include increased contact surface area density in a region between seal bands and adjacent to a planar side of a substrate support. Some examples include multiple series of mesas with mesa contact surface area density increasing in a radial direction and / or multiple series of mesas in a seal band region. Example contact surface patterns are shown in FIGs. 1 -6A and 7-10. These examples are not meant to be limiting and other example patterns are covered by the disclosure provided herein.

[0051] FIG. 1 shows a substrate processing system 100 including a substrate support 101 having a pattern of mesas 102 with localized and increased mesa contact surface area density. The substrate support 101 may be replaced with any of the substrate supports of FIGs. 2-6A and 7-10. In the shown example of FIG. 1 , the substrate support 101 includes increased mesa contact surface area density in a seal band area 103 as compared to an area 104 radially inward of the seal band area 103, which is defined by seal bands 105. Similar examples are further illustrated in FIGs. 2-5. The increased mesa contact surface area density provides an increased amount of cooling in the seal band area 103. This can result in the seal band area 103 being at the same or cooler temperature than the area 104. The quantity (or number) of the mesas in the seal band area 103 may be more than the quantity of mesas in a region of the area 104 that is a same size as the seal band area 103. In addition or as an alternative, the size of each of the mesas in the seal band area 103 may be larger than the size of each of the mesas in the area 104 such that the substrate contact surface area of each mesa in the seal band area 103 is larger than the contact surface area of each mesa in the area 104.

[0052] The substrate processing system 100 processes substrates using RF plasma. Although FIG. 1 shows a capacitive coupled plasma (CCP) system, the embodiments disclosed herein are applicable to transformer coupled plasma (TCP) systems, electron cyclotron resonance (ECR) plasma systems, inductively coupled plasma (ICP) systems and / or other systems and plasma sources that include a substrate support. The embodiments are applicable to physical vapor deposition (PVD) processes, plasma enhanced chemical vapor deposition (PECVD) processes, chemically enhanced plasma vapor deposition (CEPVD) processes, ion implantation processes, and / or other etch, deposition, and cleaning processes.Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO

[0053] The substrate processing system 100 includes a processing chamber 106. The processing chamber 106 encloses components of the processing chamber 106, such as the substrate support 101 and an upper electrode 107 and contains the RF plasma. During operation, a substrate 108 is arranged on the substrate support 101. The substrate support 101 includes the mesa 102. The mesas 102 are distributed across a top portion (or portion nearest the substrate 108) of the substrate support 101 , extend upwards away from a body of the substrate support 101 , and support and contact the substrate 108. The substrate 108 may be electrostatically clamped onto the substrate support 101 . The mesas 102 may be integrally formed as part of the substrate support 101 . The substrate support 101 may include any number of mesas and may be formed of one or more materials including metallic and / or non-metallic materials such as ceramic, aluminum, etc.

[0054] The contact surface area of the mesas 102 relative to the substrate 108 may increase with radius of the substrate support 101 (or distance away from a center of the substrate support 101 ) and thus with radius of the substrate 108 (or distance away from a center of the substrate 108). This is because the substrate 108 is centered on the substrate support. The diameter, surface area, size and / or quantity of the mesas may increase per unit area of a top lateral surface of the substrate support 101 as a radial distance from a center of the substrate support 101 increases. This increase may be localized and / or within a certain region of the substrate support and included to compensate for at least one of: i) nonsymmetrical substrate support geometry resulting in the region without the increased contact surface area density having a higher temperature as compared to other regions of the substrate support; ii) a substrate support heating and / or cooling nonuniformity located adjacent to and / or near the region; and iii) a plasma temperature nonuniformity located adjacent to and / or near the region. The mesas 102 may be cylindrically-shaped as shown in FIGs. 2-5 and / or may be shaped differently (e.g., rectangularly-shaped or triangularly-shaped).

[0055] For example only, the upper electrode 107 may include a showerhead 109 that introduces and distributes gases. The showerhead 109 may include a stem portion 1 11 including one end connected to a top surface of the processing chamber 106. The showerhead 109 is generally cylindrical and extends radially outward from an opposite end of the stem portion 1 1 1 at a location that is spaced from the top surface of the processing chamber 106. A substrate-facing surface or the showerhead 109 includesAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO holes through which process or purge gas flows. Alternatively, the upper electrode 107 may include a conducting plate and the gases may be introduced in another manner.

[0056] The substrate support 101 may include a conductive baseplate 1 10 that acts as a lower electrode. The baseplate 1 10 supports a heating plate 1 12, which may be formed at least partially of a ceramic material. A thermal resistance layer 114 may be arranged between the heating plate 112 and the baseplate 1 10. The baseplate 110 may include one or more coolant channels 1 16 for flowing coolant through the baseplate 1 10.

[0057] A radio frequency (RF) generating system 120 generates and outputs a RF voltage to one of the upper electrode 107 and the lower electrode (e.g., the baseplate 1 10 of the substrate support 101 ). The other one of the upper electrode 107 and the baseplate 1 10 may be DC grounded, AC grounded or at a floating potential. For example only, the RF generating system 120 may include one or more RF generators 122 (e.g., a capacitive coupled plasma RF power generator, a bias RF power generator, and / or other RF power generator) that generate RF voltages, which are fed by one or more matching and distribution networks 124 to the upper electrode 107 and / or the baseplate 1 10. As an example, a plasma RF generator 123, a bias RF generator 125, a plasma RF matching network 127 and a bias RF matching network 129 are shown.

[0058] A gas delivery system 130 includes one or more gas sources 132-1 , 132-2,..., and 132-N (collectively gas sources 132), where N is an integer greater than zero. The gas sources 132 supply one or more precursors and mixtures thereof. The gas sources 132 may also supply purge gas. Vaporized precursor may also be used. The gas sources 132 are connected by valves 134-1 , 134-2, ..., and 134-N (collectively valves 134) and mass flow controllers 136-1 , 136-2, ... , and 136-N (collectively mass flow controllers 136) to a manifold 140. An output of the manifold 140 is fed to the processing chamber 106. For example only, the output of the manifold 140 is fed to the showerhead 109.

[0059] A temperature controller 142 may be connected to temperature-controlled elements (TCEs) 144 (sometimes referred to as actuators) arranged in the heating plate 1 12. Although shown separately from a system controller 160, the temperature controller 142 may be implemented as part of the system controller 160. As an example, the TCEs may be resistive heating elements. As an example, the TCEs 144 may include, but are not limited to, respective macro TCEs (or first array of TCEs) corresponding to each macro zone of the heating plate 1 12 and / or micro TCEs (or second array of TCEs) corresponding to each micro zone of the heating plate 1 12. The macro TCEs may beAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO used for coarse tuning temperatures and / or other fields of macro zones of the heating plate 1 12. The micro TCEs may be used for fine tuning temperatures and / or other fields of micro zones of the heating plates. The macro zones may include the micro zones. One or more micro zones may overlap two or more of the macro zones. The macro zones and the micro zones may have predetermined, matching, different, or any arbitrary shape.

[0060] The heating plate 112 may include multiple temperature-controlled zones (e.g., 4 zones, where each of the zones includes 4 temperature sensors). Each of the temperature-controlled zones has corresponding macro and / or micro TCEs. The macros TCEs are controlled to roughly achieve selected temperatures in each of the respective temperature-controlled zones. The micro TCEs may be individually controlled to finely adjust temperatures within the respective temperature-controlled zones and / or to compensate for temperature non-uniformities in each temperature-controlled zone. For example, for each set point temperature of a macro TCE, a temperature distribution response across a top surface of the heating plate 112 may be known and mapped (i.e., stored in memory). Similarly, a temperature distribution response of each of the micro TCEs across the surface of the heating plate 1 12 may be known and mapped. Although the systems and methods disclosed herein are described with respect to multi-zone heating plates and / or ESCs, the principles of the present disclosure may be applied to other temperature-controlled components of a substrate processing system.

[0061] The temperature controller 142 may control operation and thus temperatures of the TCEs 144 to control temperatures of the substrate support 101 and a substrate (e.g., the substrate 108) on the substrate support 101. The temperature controller 142 may communicate with a coolant assembly 146 to control coolant flow (pressures and flow rates) through the channels 1 16. For example, the coolant assembly 146 may include a coolant pump and reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the channels 1 16 to cool the substrate support 101 and the heating plate 1 12. The temperature controller 142 may control the rate at which the coolant flows and a temperature of the coolant. The temperature controller 142 controls current supplied to the TCEs 144 and pressure and flow rates of coolant supplied to channels 1 16 based on detected parameters from sensors within the processing chamber 106.

[0062] A valve 156 and pump 158 may be used to evacuate reactants from the processing chamber 106. The system controller 160 may control components of theAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO substrate processing system 100 including controlling supplied RF power levels, pressures and flow rates of supplied gases, RF matching, etc. The system controller 160 controls states of the valve 156 and the pump 158. A robot 170 may be used to deliver substrates onto, and remove substrates from, the substrate support 101. For example, the robot 170 may transfer substrates between the substrate support 101 and a load lock 172. The robot 170 may be controlled by the system controller 160. The system controller 160 may control operation of the load lock 172.

[0063] The following FIGs. 2-6A and 7-10 include example substrate supports with increased contact surface area density in localized regions of the substrate supports.

[0064] FIG. 2 shows a top cut-away view of an example substrate 200 on a substrate support 202. A portion 204 of the substrate 200 is cut-away to show mesas 208 in a seal band area 210 and mesas 212 radially inward of the seal band area 210. The substrate support 202 includes a body 220 that includes the seal band area 210 defined by a pair of seal bands including a radially inward seal band 222 and a radially outward seal band 224. The seal bands 222, 224 are respectively semi-annular and annular shaped and define radially inward and radially outward peripheral borders of the seal band area 210. The radially outward seal band 224 has a planar side 226 that corresponds to a linear peripheral edge 228 of the substrate 200. The planar side 226 may be parallel to the linear peripheral edge 228. The planar side 226 may extend upward between a bottom and a top of the substrate support 202 and / or from a bottom surface of the substrate support 202 to a top surface of the substrate support 202.

[0065] The substrate support 202 includes the semi-annular series of mesas 208, which are in the seal band area 210, and a radially inner annular series of mesas 230. The radially inner annular series of mesas 230 is near, disposed along the radially inner seal band 222 and outside of the seal band area 210. Each of the series of mesas 208, 230 have increased mesa contact surface are density as compared to the other mesas 212 of the substrate support, which are radially inward of the series of mesas 208, 230. This provides additional cooling in and near the seal band area 210. In an embodiment, the mesas 208, 212, 230 are cylindrically shaped and are the same size. Distances between adjacent ones of the mesas 208 and distances between adjacent ones of the mesas 230 are smaller than distances between adjacent ones of the mesas 212. A distance D1 is shown between two of the mesas 208. A distance D2 is shown between mesas 212. The distance D1 is less than the distance D2. In an embodiment, distances between adjacentAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO ones of the mesas 208 is the same as distances between adjacent ones of the mesas 230. The distances between adjacent ones of the mesas 208, 212, 230 may be between 0.5-5mm. In an embodiment, distances between adjacent ones of the mesas 208, 212, 230 are each between 1 .0-3.0mm. In an embodiment, distances between adjacent ones of the mesas 208 and distances between adjacent ones of the mesas 230 is between 0.5-2.5mm and distances between adjacent ones of the mesas 212 is between 1.5- 5.0mm. In an embodiment, distances between adjacent ones of the mesas 208 and distances between adjacent ones of the mesas 230 is between 1 .0-2.5mm and distances between adjacent ones of the mesas 212 is between 1 .5-3.0mm. The annular series of mesas 230 may be a distance D3 from the radially inner seal band 222. The distance D3 may be 0.25-0.75mm.

[0066] In the example shown in FIG. 2, the mesas 208 are arranged in a first semiannular series, the mesas 230 are arranged in a second annular series, and the mesas 212 are arranged in multiple annular series. In an embodiment, some of the mesas 208 that are near the planar side 226 are arranged linearly and parallel to the planar side 226 and for this reason the mesas 208 are referred to as being in a semi-annular series.

[0067] An annular cooling groove 240 is shown and located radially outward and adjacent to the radially inner seal band 222. The annular cooling groove 240 may receive helium gas or other cooling gas. Although a single annular cooling groove 240 is shown, one or more additional cooling grooves may be included. Also, although the annular cooling groove 240 is shown adjacent the radially inner seal band 222, the annular cooling groove 240 may be adjacent to and radially inward of the radially outer seal band 224. The cooling gas provided by the annular cooling groove 240 disperses around the mesas 208 between the seal bands 222, 224 and cools the substrate 200.

[0068] FIG. 3 shows a top-cut-away view of a substrate 300 showing a portion 302 of an example mesa pattern of a substrate support 304. The mesa pattern includes a semiannular series of mesas 306 in a seal band area 308 including increased mesa contact surface area density near a planar side 310 of the substrate support 304 and a radially inward annular cooling groove 312.

[0069] The semi-annular series of mesas 306 includes first mesas 320, which are located near the planar side 310, and second mesas 322. The first mesas 320 are in a linear arrangement and the second mesas 322 are arranged in an annular arrangement. The second mesas 322 are in series with the first mesas 320. A distance D1 betweenAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO adjacent ones of the second mesas 322 is shown. A distance D4 between adjacent ones of the first mesas 320 is shown. In the example embodiment shown, the distance D3 is smaller than the distance D1 . This provides additional cooling near the planar side 310.

[0070] The substrate support 304 includes a pair of seal bands 330, 332. Although in this example, an annular series of mesas located adjacent and radially inward of the radially inner annular seal band 332 is not shown, an annular series of mesas similar to the mesas 230 of FIG. 2 may be included.

[0071] FIG. 4 shows a top-cut-away view of a substrate 400 showing a portion 402 of an example mesa pattern of a substrate support 404 including multiple series of mesas 406, 408, 410 in a seal band area 412 with increasing mesa contact surface area density in a radial direction. Distances between adjacent ones of the mesas 406 are less than distances between adjacent ones of the mesas 408. Distances between adjacent ones of the mesas 408 are less than distances between adjacent ones of the mesas 410.

[0072] Although distances between adjacent ones of the series of mesas 406 near the planar side 413 of the substrate support 404 are shown distanced apart from other the same as other adjacent ones of the series of mesas 406 away from the planar side 413, the adjacent ones of the series of mesas 406 near the planar side 413 of the substrate support 404 may be closer two each other than the other adjacent ones of the series of mesas 406 away from the planar side 413. Similarly, Although distances between adjacent ones of the series of mesas 408 near the planar side 413 of the substrate support 404 are shown distanced apart from other the same as other adjacent ones of the series of mesas 408 away from the planar side 413, the adjacent ones of the series of mesas 408 near the planar side 413 of the substrate support 404 may be closer two each other than the other adjacent ones of the series of mesas 408 away from the planar side 413. Also, although distances between adjacent ones of the series of mesas 410 near the planar side 413 of the substrate support 404 are shown distanced apart from other the same as other adjacent ones of the series of mesas 410 away from the planar side 413, the adjacent ones of the series of mesas 410 near the planar side 413 of the substrate support 404 may be closer two each other than the other adjacent ones of the series of mesas 410 away from the planar side 413. An example of this is shown by the semi-annular series of mesas 306 in FIG. 3.

[0073] Distances between adjacent ones of the mesas 408 may be the same or less than distances between adjacent ones of annular series of mesas 414. DistancesAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO between adjacent ones of the mesas 410 may be the same or less than distances between adjacent ones of the mesas 416. The mesas 416 may be arranged in multiple annular series of mesas, as shown. Dashed lines 420 are provided to illustrate the semiannular lines along which the mesas 406, 408, 410 are arranged. The shown arrangement within the seal band area provides additional cooling closer to the radially outer seal band 422 than near the radially inner seal band 424.

[0074] FIG. 5 shows a top-cut-away view of a substrate 500 showing a portion 502 of an example mesa pattern of a substrate support 504 including a semi-annular series of mesas 506 in a seal band area 508 including increased mesa contact surface area density near a planar side 510 of the substrate support 500 and a radially outward semiannular cooling groove 512. The substrate support 504 may also include mesas 514 and 516, similar to mesas 414 and 416 of FIG. 4.

[0075] The semi-annular series of mesas 506 includes first mesas 520, which are located near the planar side 510, and second mesas 522. The first mesas 520 are in a linear arrangement and the second mesas 522 are arranged in an annular arrangement. The second mesas 522 are in series with the first mesas 520. A distance D1 between adjacent ones of the second mesas 522 and a distance D5 between adjacent ones of the first mesas 520 are shown. The distance D5 may be smaller than the distance D1 . This provides additional cooling near the planar side 510.

[0076] FIG. 6A shows a top-cut-away view of a substrate 600 showing a portion 602 of an example mesa pattern of a substrate support 604 including a semi-annular series of slot mesas (or rectangular-shaped “islands”) 606 in a seal band area 608. The islands 606 are arranged in a series between seal bands 610, 612. A cooling groove 614 is shown as an example but may be located elsewhere such as adjacent to the seal band 612.

[0077] The islands 606 have substantially larger contact surface area than mesas 616 for increased cooling. The islands 606 may be rectangular shaped and / or square shaped. The islands 606 have a width W1 and a length L1. In an embodiment, the width W1 is 0.5-5mm and the length L1 is 2-10mm. A separation distance S1 between adjacent ones of the islands 606 is 0.5-2.0mm. As an example, a diameter of each of the mesas 616 is 0.5-1 .0mm.

[0078] FIG. 6B shows a cross-sectional view at section line A-A of FIG. 6A illustrating corresponding mesa, cooling groove, and seal band dimensions. The seal bands 610,Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO612 and the islands 606 have a height H. The width W1 of the islands 606 is shown. A gap g1 exists between the seal band 610 and the islands 606. A gap G2 exists between the islands 606 and the seal band 612. A width W2 of the cooling groove 614 is shown. A depth DEP1 of the cooling groove 614, measured from a bottom surface 620 between the island 606 and the seal band 612 to a bottom surface 622 of the cooling groove 614, is shown. An overall depth DEP2 of the cooling groove 614, measured from a top surface 624 of the seal band 612 to the bottom surface 622 of the cooling groove 614, is shown. H may be 10-50 microns (p). G1 may be 0.5-2.0mm. G2 may be 1 .0-4.0mm. W2 may be 0.5-2.0mm. DEP1 may be 10-50 microns (p). DEP2 may be 20-100 microns (p).

[0079] FIG. 7 shows a top-cut-away view of a substrate 700 showing a portion 702 of an example mesa pattern of a substrate support 704 including a semi-annular series of triangular mesas (or triangular-shaped “islands”) 706 in a seal band area 708. The mesas 706 are arranged in a series between seal bands 710, 712. A cooling groove 714 is shown as an example but may be located elsewhere such as adjacent to the seal band 712. Mesas 716 are shown radially inward of the seal band 712.

[0080] Each of the mesas 706 has three sides with respective edges. The sides of each of the mesas 706 may have a same edge length L2, which may be 1 -5mm. In an embodiment, the edge length L2 is 2-4mm. A separation distance S2 between mesas 706 is shown and may be 0.5-2.0mm. The mesas 706 have an alternating pattern such that every other one of the mesas 706 points radially inward and every other one of the mesas 706 points radially outward. The mesas 706 thus have two series of mesas 706A, 706B, where the series of mesas 706A point radially inward and the series of mesas 706B point radially outward. Each of the mesas 706B is located between two of the mesas 706A.

[0081] A triangular shaped mesa points radially inward when the mesa and / or top surface of the mesa has a side edge positioned radially outward of a vertex (or corner) of the mesa. The radially inward pointing mesa may be centered on a radius of the substrate support and point at a center of the substrate support. Similarly, a triangular shaped mesa points radially outward when the mesa and / or a top surface of the mesa has a side edge positioned radially inward of a vertex (or corner) of the mesa. The radially outward pointing mesa may be centered on a radius of the substrate and point away from the center of the substrate support. A triangular shaped mesa is centered on a radius ofAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO the substrate support when the radius extends through a vertex of, for example, the top surface of the mesa and perpendicular to a side edge of the top surface.

[0082] FIG. 8 shows a top-cut-away view of a substrate 800 showing a portion 802 of an example mesa pattern of a substrate support 804 including a semi-annular band 808 in a seal band area 810. Although the semi-annular band 808 is shown as being zigzag shaped, the semi-annular band 808 may be shaped differently than shown. The semiannular band 808 may be a continuous or a discontinuous annular band. Passthrough channels (or cutouts) 809 may be included and extend through or separate portions of the semi-annular band 808. The passthrough channels 809 allow cooling gas to pass through and / or across the semi-annular band 808. In an embodiment, a passthrough channel 809 may be provided for each cooling gas hole, which supplies cooling gas to the cooling groove 814. As an example, cooling gas holes 811 are shown. In an embodiment, 5-40 passthrough channels and 5-40 cooling gas holes are included. In an embodiment, the number of passthroughs is different than the number of cooling gas holes. In an embodiment, the passthroughs 809 are evenly spaced about the semiannular band 808 and the cooling gas holes 81 1 are evenly spaced about the cooling gas groove 814.

[0083] In another embodiment, one or more of the portions of the semi-annular band 808 may not be included and / or replaced with mesas, such as any of the mesas disclosed herein. The semi-annular band 808 is arranged between seal bands 81 1 , 812. A cooling groove 814 is shown as an example but may be located elsewhere such as adjacent to the seal band 812. Mesas 816 are shown radially inward of the seal band 812.

[0084] The semi-annular band 808, as shown, includes a first width W1 for a first portion of the semi-annular band 808 that is away from the planar side 813 and a second width W2 for a second portion of the semi-annular band 808 that is near the planar side 813. The second width is less than the first width. W1 and W2 may be between 2-5mm. Intertwin channels (or gaps) 820 exist in the semi-annular band 808 and extend radially in areas away from a linear portion of the seal band 81 1 and perpendicular to the linear portion of the seal band 81 1 in an area adjacent to the linear portion of the seal band 81 1 . The intertwin channels refer to gaps between adjacent portions and / or segments of the semi-annular band 808. Each intertwin channel extends between a first portion and / or segment of the semi-annular band 808 that extends radially inward and a second portion and / or segment of the semi-annular band 808 that extends radially outward. The semi-Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO annular band 808 includes first intertwin channels that extend from the semi-annular band 808 radially inward and second intertwin channels that extend from the semi-annular band 808 radially outward. A width W3 of each of the intertwin channels in the areas away from the linear portion of the seal band 81 1 is shown. A width W4 of each of the intertwin channels near the linear portion of the seal band 81 1 is shown.

[0085] The semi-annular band 808 is shown as a zigzag patterned band with varying thickness. First portions 830 of the semi-annular band 808 that extend radially may have a first thickness T1 in areas away from the linear portion of the seal band 811 . Second portions 832 of the semi-annular band 808 that extend perpendicular to the linear portion of the seal band 81 1 may have a second thickness T2 in the area adjacent to the linear portion of the seal band 81 1 . Third portions 834 of the semi-annular band 808 that extend between the first and second portions may have a thickness T3. T1 may be 0.5-5mm. T2 may be 0.5-3.0mm. T3 may be 0.5-1 .5mm. The zigzag pattern of the semi-annular band 808 aids in diffusing cooling gas throughout the seal band area 810 provided via the cooling groove 814.

[0086] Although the above-described examples show increased contact surface area density in and near a seal band area, contact surface area density can also be increased in other localized areas of a substrate support. For example, increased contact surface area density can be increased in a certain annular range, such as one of the ranges 0- 20 mm, 50-70mm, 90-1 10mm, 140-147mm, etc. An example of this is shown in FIG. 9. As another example, contact surface area density may be increased in a particular area of the substrate support, as shown in FIG. 10. This localized increase in contact surface area density may be due to nonsymmetrical substrate support geometry, a substrate support heating and / or cooling nonuniformity, and a plasma temperature nonuniformity associated with the localized area of the substrate support.

[0087] FIG. 9 shows a top-cut-away view of a substrate 900 showing a portion 902 of an example mesa pattern of a substrate support 904 including multiple series of slot mesas including a first series of slot mesas 906 in a seal band area 908 and a second series of slot mesas 910 in another annular range 912. The mesas 906 are arranged in a series between seal bands 914, 916. A cooling groove 918 is shown as an example but may be located elsewhere such as adjacent to the seal band 914. Mesas 920 are shown radially inward of the seal band 916. Although slot mesas 910 are shown, the slotAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO mesas may be replaced with other mesas. For example, each of the slot mesas 910 may be replaced with multiple cylindrically shaped or triangularly shaped mesas.

[0088] FIG. 10 shows a top-cut-away view of a substrate 1000 showing a portion 1002 of an example mesa pattern of a substrate support 1004 including a semi-annular series of slot mesas 1006 in a seal band area 1008 and an increased number of mesas 1010 in a localized area 1012. The mesas 1010 are in a cluster in the localized area 1012. Mesas 1006 are arranged in a series between seal bands 1016, 1018. A cooling groove 1020 is shown as an example but may be located elsewhere such as adjacent to the seal band 1018. Mesas 1022 are shown radially inward of the seal band 1018 and surround the mesas 1010.

[0089] The above-described examples include increasing contact surface area density in hotter areas. Contact surface area density may also be decreased in cooler areas. This may be accomplished by decreasing sizes of mesas, increasing separation distances between mesas, and / or reducing the number of mesas. This may be implemented in local regions based on nonsymmetrical substrate support geometry, substrate support heating and / or cooling nonuniformities, and plasma temperature nonuniformities. The examples include providing increased cooling at wafer peripheral edge, in a seal band area, at a wafer linear edge, and at other localized areas of a substrate support. The increased cooling may be provided to minimize differences in temperatures between these localized areas and other areas. The increased contact surface area density can be increased from 10-20% to 80-90% and provides increased radial and / or azimuthal temperature uniformity of both substrate support and substrate being processed.

[0090] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In otherAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0091] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0092] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0093] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips definedAttorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0094] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, and as described above, the controller may be distributed, such as by including one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0095] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metalAttorney Docket No. 15545-001276-WO-POA HDP Ref. No. 11781 -1 WO plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0096] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WOCLAIMSWhat is claimed is:1 . A substrate support to support a substrate in a processing chamber, the substrate support comprising: a body comprising a plurality of seal bands, wherein the plurality of seal bands are configured to contact the substrate and define a seal band area; a first plurality of mesas extending upward from the body and configured to contact the substrate; and a second plurality of mesas extending upward from the body in the seal band area and configured to contact the substrate, wherein the second plurality of mesas have a higher contact surface area density than the first plurality of mesas.

2. The substrate support of claim 1 , wherein the first plurality of mesas are disposed radially inward of the second plurality of mesas.

3. The substrate support of claim 1 , wherein the first plurality of mesas are disposed radially inward of the seal band area.

4. The substrate support of claim 1 , wherein a size of each of the second plurality of mesas is larger than a size of each of the first plurality of mesas.

5. The substrate support of claim 1 , wherein a contact surface area of each of the second plurality of mesas is larger than a contact surface area of each of the first plurality of mesas.

6. The substrate support of claim 1 , wherein a quantity of the second plurality of mesas in a first region of the substrate support is greater than a quantity of the first plurality of mesas in a second region of the substrate support, wherein the first region and the second region are equal in size.

7. The substrate support of claim 1 , wherein some of the second plurality of mesas are distanced closer to each other than other ones of the second plurality of mesas.Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO8. The substrate support of claim 1 , wherein some of the second plurality of mesas have a higher contact surface area density than other ones of the second plurality of mesas and are located adjacent to at least one of an upward extending planar side of the substrate support and a linear portion of one of the plurality of seal bands.

9. The substrate support of claim 1 , further comprising a third plurality of mesas extending upward from the body and having a higher contact surface area density than the first plurality of mesas.

10. The substrate support of claim 9, wherein the second plurality of mesas are arranged in a series.1 1 . The substrate support of claim 9, wherein some of the second plurality of mesas are arranged in an annular series.

12. The substrate support of claim 9, wherein the second plurality of mesas are arranged in a semi-annular series and some of the second plurality of mesas are arranged in a linear series.

13. The substrate support of claim 9, wherein the third plurality of mesas are in the seal band area.

14. The substrate support of claim 13, wherein the third plurality of mesas have a lower contact surface area density than the second plurality of mesas.

15. The substrate support of claim 13, wherein the third plurality of mesas are disposed radially inward of the second plurality of mesas.

16. The substrate support of claim 13, further comprising a fourth plurality of mesas arranged in the seal band area.

17. The substrate support of claim 13, wherein the third plurality of mesas are radially inward of the seal band area.

18. The substrate support of claim 17, wherein the third plurality of mesas are adjacent and are arranged along the seal band area.Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO19. The substrate support of claim 1 , wherein the second plurality of mesas are islands that are at least one of rectangular shaped and square shaped.

20. The substrate support of claim 1 , wherein the second plurality of mesas have a contact surface area density of 80-90% in the seal band area.21 . The substrate support of claim 1 , wherein: the second plurality of mesas are islands that are at least one of rectangular shaped and square shaped; and the second plurality of mesas have a contact surface area density of 80-90% in the seal band area.

22. The substrate support of claim 1 , wherein: the second plurality of mesas are islands that are at least one of rectangular shaped and square shaped; and each of the second plurality of mesas have a width of 0.5-5.0 millimeters and a length of 2-10 millimeters.

23. The substrate support of claim 1 , wherein: the second plurality of mesas are islands that are at least one of rectangular shaped and square shaped; some of the second plurality of mesas are arranged in a linear series that is adjacent to at least one of an upward extending planar side of the substrate support and a linear portion of one of the plurality of seal bands; and others of the second plurality of mesas are arranged in an annular series.

24. The substrate support of claim 23, wherein the first plurality of mesas are cylindrical shaped and are radially inward of the seal band area.

25. The substrate support of claim 23, wherein: the first plurality of mesas have a contact surface area density of 10-20% in an area radially inward of the seal band area; and the second plurality of mesas have a contact surface area density of 80-90% in the seal band area.Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO26. The substrate support of claim 1 , wherein: the first plurality of mesas are islands that are at least one of rectangular shaped and square shaped; and the second plurality of mesas are islands that are at least one of rectangular shaped and square shaped.

27. The substrate support of claim 1 , further comprising a third plurality of mesas, wherein: the first plurality of mesas are cylindrically shaped; the second plurality of mesas are islands that are at least one of rectangular shaped and square shaped and are arranged in a semi-annular series; and the third plurality of mesas are islands that are at least one of rectangular shaped and square shaped and are arranged in an annular series.

28. The substrate support of claim 1 , wherein the second plurality of mesas are triangular shaped mesas.

29. The substrate support of claim 28, wherein the second plurality of mesas comprise: a third plurality of mesas pointing radially inward; and a fourth plurality of mesas pointing radially outward.

30. The substrate support of claim 29, wherein each of the fourth plurality of mesas is disposed between two adjacent ones of the third plurality of mesas.

31. The substrate support of claim 28, wherein the second plurality of mesas is arranged in a series and alternating pattern, where every other one of the second plurality of mesas points radially inward and every other one of the second plurality of mesas points radially outward.Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO32. A substrate support to support a substrate in a processing chamber, the substrate support comprising: a body comprising a plurality of seal bands, wherein the plurality of seal bands are configured to contact the substrate and define a seal band area; a first plurality of mesas extending upward from the body and configured to contact the substrate, wherein the first plurality of mesas are radially inward of the seal band area; and a semi-annular band disposed in the seal band area between the plurality of seal bands and configured to contact the substrate.

33. The substrate support of claim 32, wherein the semi-annular band has a higher contact surface area density than the first plurality of mesas.

34. The substrate support of claim 32, wherein the semi-annular band has a zigzag pattern.

35. The substrate support of claim 32, wherein the semi-annular band comprises: a linear portion adjacent to at least one of an upward extending planar side of the substrate support and a linear portion of one of the plurality of seal bands; and an annular shaped portion disposed away from the planar side of the substrate support.

36. The substrate support of claim 32, wherein the semi-annular band comprises a plurality of intertwin channels configured to disperse cooling gas in the seal band area.

37. The substrate support of claim 32, wherein: a first portion of the semi-annular band is disposed adjacent to at least one of an upward extending planar side of the substrate support and a linear portion of one of the plurality of seal bands and has a first width; a second portion of the semi-annular band that is disposed away from the planar side of the substrate support has a second width; and the second width is greater than the first width.

38. The substrate support of claim 32, wherein the semi-annular band is continuous.Attorney Docket No. 15545-001276-WO-POA HDP Ref. No. 11781 -1 WO39. The substrate support of claim 32, wherein the semi-annular band comprises a plurality of passthrough channels configured to pass cooling gas radially across the semiannular band.

40. The substrate support of claim 32, wherein the semi-annular band is discontinuous.41 . The substrate support of claim 32, wherein the semi-annular band comprises: a first plurality of intertwin channels; and a second plurality of intertwin channels.

42. The substrate support of claim 41 , wherein: the first plurality of intertwin channels extend radially inward from the semi-annular band; and the second plurality of intertwin channels extend radially outward from the semiannular band.

43. The substrate support of claim 32, wherein: a first portion of the semi-annular band adjacent to a linear portion of one of the plurality of seal bands has a first thickness; and a second portion of the semi-annular band is disposed away from an upward extending planar side of the substrate support and has a second thickness that is different than the first thickness.

44. The substrate support of claim 32, further comprising a second plurality of mesas disposed adjacent and outside of the seal band area, wherein a contact surface area density of the second plurality of mesas is greater than a contact surface area density of the first plurality of mesas.Attorney Docket No. 15545-001276-WO-POAHDP Ref. No. 11781 -1 WO45. A substrate support to support a substrate in a processing chamber, the substrate support comprising: a body; a first plurality of mesas extending upward from the body, configured to contact the substrate, and arranged in a localized region of the substrate support; and a second plurality of mesas extending upward from the body and configured to contact the substrate, wherein the second plurality of mesas are outside the localized region and have a lower contact surface area density than the first plurality of mesas, wherein the second plurality of mesas at least one of surround the first plurality of mesas, and include a third plurality of mesas arranged radially inward of the localized region and a fourth plurality of mesas arranged radially outward of the localized region.

46. The substrate support of claim 45, wherein the second plurality of mesas surround the first plurality of mesas.

47. The substrate support of claim 45, wherein the second plurality of mesas include the third plurality of mesas and the fourth plurality of mesas.

48. The substrate support of claim 45, wherein the first plurality of mesas are clustered in the localized region.

49. The substrate support of claim 48, wherein the first plurality of mesas are cylindrically shaped.

50. The substrate support of claim 45, further comprising: a plurality of seal bands, wherein the plurality of seal bands are configured to contact the substrate and define a seal band area; and a fifth plurality of mesas in the seal band area.51 . The substrate support of claim 50, wherein the seal band area is radially outward of the first plurality of mesas and the second plurality of mesas.

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