Process chamber, and apparatus and method for processing semiconductor device

Abstract

The present invention provides a process chamber, and an apparatus and method for processing a semiconductor device. The process chamber comprises a wafer support mechanism, a showerhead, a lifting mechanism, and a rotating mechanism, wherein the wafer support mechanism is located inside the process chamber, and is configured to support an edge of a wafer and expose a back side of the wafer; the showerhead is located below the wafer support mechanism, and is configured to spray a process gas onto the back side of the wafer; the lifting mechanism is configured to lift and lower the wafer support mechanism and / or the showerhead during the process of performing deposition on the back side of the wafer, so as to adjust the distance between the showerhead and the back side of the wafer; and the rotating mechanism is configured to rotate the wafer support mechanism and / or the showerhead during the process of performing deposition on the back side of the wafer, so as to adjust the angle of deflection between the showerhead and the back side of the wafer.

Description

Process chambers, semiconductor device fabrication equipment and methods Technical Field

[0001] This invention relates to the field of semiconductor device fabrication, and more particularly to a process chamber, a semiconductor device fabrication apparatus, a semiconductor device fabrication method, and a computer-readable storage medium. Background Technology

[0002] To meet the growing demand for large-size wafer technology in the semiconductor industry, prior art, using Chinese patent applications 202010458535.9, 202111330341.1, and 202111330342.6 as examples, proposes some rotation and lifting mechanisms that can lift and / or rotate the heating plate in the front-side thin film deposition equipment to adjust the wafer's position in the process chamber, thereby improving the uniformity of front-side deposition.

[0003] In the field of back-side deposition technology for semiconductor devices, back-side deposition equipment suffers from challenges due to a series of complex factors, including the processing precision of the process chamber, the uniformity of air output from the spray head, the uniformity of heating from the heating plate, and the uniformity of air extraction from the extraction ring. These factors contribute to the inability to achieve uniform back-side film thickness. However, because back-side deposition equipment has a significantly different process chamber structure than front-side deposition equipment, existing technologies are not applicable to back-side deposition and cannot effectively alter the back-side film thickness. Therefore, there is an urgent need in the field for an improved process chamber to enhance the uniformity of wafer back-side deposition film thickness and adjust stress, thereby improving the processing quality of semiconductor devices.

[0004] Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a process chamber, a semiconductor device processing apparatus, a semiconductor device processing method, and a computer-readable storage medium. By placing a spray head on the back side of the wafer and adjusting the distance and / or deflection angle between the spray head and the back side of the wafer during the back side deposition process, the uniformity of the film thickness deposited on the back side of the wafer and the stress adjustment can be improved, thereby enhancing the processing quality of the semiconductor device.

[0007] Specifically, the process chamber provided in the first aspect of the present invention includes a wafer support mechanism, a spray head, a lifting mechanism, and a rotating mechanism. The wafer support mechanism is located inside the process chamber and is used to support the edge of the wafer and expose the back side of the wafer. The spray head is located below the wafer support mechanism and is used to spray process gases onto the back side of the wafer. The lifting mechanism is used to raise and lower the wafer support mechanism and / or the spray head during the back side deposition process of the wafer to adjust the distance between the spray head and the back side of the wafer. The rotating mechanism is used to rotate the wafer support mechanism and / or the spray head during the back side deposition process of the wafer to adjust the deflection angle between the spray head and the back side of the wafer.

[0008] Furthermore, in some embodiments of the present invention, the wafer support mechanism includes: an edge ring for supporting the edge of the wafer and exposing the back side of the wafer; and a plurality of edge ring struts for connecting the edge ring to the lifting mechanism and / or the rotating mechanism to lift the wafer under the drive of the lifting mechanism and / or rotate the wafer under the drive of the rotating mechanism.

[0009] Furthermore, in some embodiments of the present invention, the process chamber includes a plurality of lifting mechanisms and a plurality of rotating mechanisms, which are respectively arranged circumferentially along the process chamber. The plurality of lifting mechanisms are all located below the spray head and above or below the bottom of the process chamber, and are each connected to an edge ring support rod for lifting the wafer via the edge ring support rod and the edge ring. The plurality of rotating mechanisms are all located below the spray head and above or below the bottom of the process chamber, and are each connected to an edge ring support rod for rotating the wafer via the edge ring support rod and the edge ring.

[0010] Furthermore, in some embodiments of the present invention, the process chamber includes at least one lifting mechanism and a plurality of rotating mechanisms. At least one lifting mechanism is located below the spray head and above or below the bottom of the process chamber, and is connected to the spray head for driving the spray head to move up and down. A plurality of rotating mechanisms are arranged circumferentially along the process chamber, all located below the spray head and above or below the bottom of the process chamber, and are each connected to an edge ring support rod for rotating the wafer via the edge ring support rod and the edge ring.

[0011] Furthermore, in some embodiments of the present invention, the process chamber includes a plurality of the lifting mechanisms and at least one of the rotating mechanisms. The plurality of lifting mechanisms are arranged circumferentially along the process chamber, all located below the spray head and above or below the bottom of the process chamber, and each is connected to an edge ring support rod for lifting the wafer via the edge ring support rod and the edge ring.

[0012] Furthermore, in some embodiments of the present invention, multiple rotating mechanisms are located below the top of the process chamber, with their outer sides connected to the inner side of the process chamber sidewall and their inner sides connected to the outer side of the edge ring, for driving the wafer to rotate via the edge ring.

[0013] Furthermore, in some embodiments of the present invention, the process chamber further includes a heating plate located above the wafer support mechanism and including an upwardly extending first rotation axis. The wafer support mechanism further includes a link assembly with its two ends connected to the heating plate and the edge ring, respectively, wherein the link assembly includes a spring, a hook, and / or a trigger mechanism. At least one of the rotation mechanisms is located above the heating plate and above or below the top of the process chamber, and is connected to the first rotation axis for rotating the wafer via the heating plate, the link assembly, and the edge ring.

[0014] Furthermore, in some embodiments of the present invention, the spray head further includes a downwardly extending second rotating shaft. At least one of the rotating mechanisms is located below the spray head and above or below the bottom of the process chamber, and is connected to the second rotating shaft for driving the spray head to rotate via the second rotating shaft.

[0015] Furthermore, in some embodiments of the present invention, the wafer support mechanism further includes a first rotary transmission member, one end of the plurality of edge ring support rods being connected to the edge ring, and the other end being connected to the first rotary transmission member, wherein the first rotary transmission member is selected from belts or gears. The rotating mechanism includes a stator, a rotor, a drive member, and a third rotating shaft, wherein the stator is fixedly connected to the bottom of the process chamber for driving the rotor to rotate around the third rotating shaft, and the drive member is sleeved between the first end of the third rotating shaft and the rotor for driving the first end of the third rotating shaft to rotate with the rotor, so as to drive the plurality of edge ring support rods to rotate around the central axis of the edge ring via the first rotary transmission member connected to the second end of the third rotating shaft.

[0016] Furthermore, in some embodiments of the present invention, the wafer support mechanism further includes a second rotary transmission member connected to the edge ring, wherein the second rotary transmission member is selected from a belt or gear. The rotating mechanism includes a stator, a rotor, a drive member, and a third rotating shaft, wherein the stator is fixedly connected to the inner side of the process chamber sidewall and is used to drive the rotor to rotate around the third rotating shaft, and the drive member is sleeved between the first end of the third rotating shaft and the rotor, and is used to drive the first end of the third rotating shaft to rotate with the rotor, so as to drive the edge to rotate around its central axis via the second rotary transmission member connected to the second end of the third rotating shaft.

[0017] Furthermore, in some embodiments of the present invention, the rotating mechanism includes a stator, a rotor, and a driving member, wherein the stator is fixedly connected to the top of the process chamber and is used to drive the rotor to rotate around the first rotating axis, and the driving member is sleeved between the first rotating axis and the rotor and is used to drive the heating plate to rotate with the rotor via the first rotating axis.

[0018] Furthermore, in some embodiments of the present invention, the rotating mechanism includes a stator, a rotor, and a driving member, wherein the stator is fixedly connected to the bottom of the process chamber and is used to drive the rotor to rotate around the second rotating axis, and the driving member is sleeved between the second rotating axis and the rotor and is used to drive the spray head to rotate with the rotor via the second rotating axis.

[0019] Furthermore, in some embodiments of the present invention, the process chamber further includes a fixed support, which is located above or below the bottom of the process chamber and is fixedly connected to the bottom of the process chamber. The lifting mechanism includes a lifting support, a drive motor, a reducer, a threaded rod, and a threaded block, wherein the drive motor, the reducer, and the threaded rod are connected in sequence, the reducer is also fixedly connected to the fixed support, the threaded rod rotates under the drive of the reducer, and the threaded block is sleeved around the threaded rod to move up and down with the rotation of the threaded rod. One side of the threaded block is embedded in the guide groove on one side of the fixed support, while the other side is fixedly connected to the lifting support to drive the lifting support connected to the edge ring support or the spray head to move up and down.

[0020] Furthermore, in some embodiments of the present invention, the rotating mechanism includes a connector and a telescopic tubular assembly, wherein the connector is provided with a sliding groove, the driving member of the rotating mechanism extends into the sliding groove to slidably connect the connector, and the telescopic tubular assembly is sleeved around the rotating shaft of the rotating mechanism, with its two ends respectively sealingly connected to the bottom of the process chamber and the connector.

[0021] Furthermore, in some embodiments of the present invention, the rotating mechanism further includes at least one magnetic fluid seal, wherein the at least one magnetic fluid seal is sleeved around the periphery of the driving member and forms a magnetic fluid receiving space between it and the outer side wall of the driving member, and the magnetic fluid receiving space contains magnetic fluid.

[0022] Furthermore, in some embodiments of the present invention, the process chamber further includes: a purge gas guide ring having a slit channel between it and the rotation shaft of the rotating mechanism, and including uniformly distributed exhaust holes, wherein the purge gas guide ring provides purge exhaust gas uniformly distributed in the circumferential direction to the process chamber via the magnetic fluid seal and the slit channel.

[0023] Furthermore, in some embodiments of the present invention, the rotating mechanism further includes an air blowing device. The outer side of the connector is provided with an air inlet connected to the air blowing device, and an annular air passage communicating with the air inlet is embedded within the connector. The bottom of the annular air passage is provided with multiple air outlets, and the vertical distance between the air outlets and the rotating shaft is less than the vertical distance between the outer wall of the driving member and the rotating shaft.

[0024] Furthermore, the processing equipment for the semiconductor device provided in the second aspect of the present invention includes the process chamber provided in the first aspect.

[0025] Furthermore, the semiconductor device processing method provided in the third aspect of the present invention includes the following steps: placing a wafer to be processed onto a wafer support mechanism in the process chamber of the semiconductor device processing equipment provided in the second aspect; during the back-side deposition process of the wafer, raising and lowering the wafer support mechanism and / or the spray head at least once via a lifting mechanism of the process chamber to adjust the distance between the spray head and the back side of the wafer, and / or rotating the wafer support mechanism and / or the spray head at least once via a rotating mechanism of the process chamber to adjust the deflection angle between the spray head and the back side of the wafer; and in response to the completion of the back-side deposition process, removing the processed wafer from the process chamber.

[0026] Furthermore, in some embodiments of the present invention, the step of rotating the wafer support mechanism and / or the spray head at least once via the rotation mechanism of the process chamber to adjust the deflection angle between the spray head and the back surface of the wafer includes: starting from a preset starting position, adjusting the deflection angle between the spray head and the back surface of the wafer by at least one reciprocating rotation, first rotating a first angle in a preset first direction and then rotating a second angle in the opposite second direction.

[0027] Furthermore, in some embodiments of the present invention, the processing method further includes the following steps: before placing the wafer to be processed onto the wafer support mechanism, lowering the wafer support mechanism and / or the spray head to a preset wafer transfer position via the lifting mechanism; before performing a back-side deposition process on the received wafer, raising the wafer support mechanism and / or the spray head to a preset process position via the lifting mechanism; and before removing the processed wafer from the process chamber, lowering the wafer support mechanism and / or the spray head to the wafer transfer position via the lifting mechanism.

[0028] Furthermore, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions thereon. When the computer instructions are executed by a processor, the processing method of the semiconductor device provided in the third aspect is implemented. Attached Figure Description

[0029] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related properties or features may have the same or similar reference numerals.

[0030] Figure 1 shows a schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention.

[0031] Figure 2 shows a schematic diagram of the arrangement of the lifting mechanism and the rotating mechanism provided according to some embodiments of the present invention.

[0032] Figure 3 shows a cross-sectional structural schematic diagram of the lifting mechanism and the rotating mechanism provided according to some embodiments of the present invention.

[0033] Figure 4 shows a three-dimensional structural schematic diagram of a lifting mechanism provided according to some embodiments of the present invention.

[0034] Figure 5 shows a cross-sectional schematic diagram of a rotating mechanism provided according to some embodiments of the present invention.

[0035] Figure 6 shows an enlarged view of the area indicated by the ellipse in Figure 5.

[0036] Figure 7 shows a front view of a rotating mechanism provided according to some embodiments of the present invention.

[0037] Figure 8 shows a bottom view of the rotating mechanism provided according to some embodiments of the present invention.

[0038] Figure 9 shows a cross-sectional schematic diagram of a rotating mechanism provided according to some embodiments of the present invention.

[0039] Figure 10 shows a three-dimensional structural schematic diagram of a rotary sliding support provided according to some embodiments of the present invention.

[0040] Figure 11 shows a three-dimensional structural schematic diagram of a sliding column and a limiting ring provided according to some embodiments of the present invention.

[0041] Figure 12 shows a schematic diagram of the lifting mechanism and rotating mechanism provided according to some embodiments of the present invention.

[0042] Figure 13 shows a partially enlarged structural diagram of region A in Figure 13.

[0043] Figure 14 shows a partially enlarged structural diagram of region B in Figure 13.

[0044] Figure 15 shows a schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention.

[0045] Figure 16 shows a schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention.

[0046] Figure 17 shows a schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention.

[0047] Figure 18 shows a schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention.

[0048] Figure 19 shows a schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention.

[0049] Figures 20A to 20E show schematic diagrams of the state of the process chamber provided according to some embodiments of the present invention in multiple processing flows.

[0050] Figure 21 shows a schematic diagram of reciprocating rotation provided according to some embodiments of the present invention. Detailed Implementation

[0051] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0052] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0053] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0054] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0055] As mentioned above, in the field of back-side deposition technology for semiconductor devices, due to a series of complex factors such as the processing precision of the process chamber, the uniformity of gas output from the spray head, the uniformity of heating from the heating plate, and the uniformity of gas extraction from the extraction ring, back-side deposition equipment for semiconductor devices also suffers from the problem that the back-side film thickness cannot meet the uniformity requirements. However, since back-side deposition equipment has a completely different process chamber structure from front-side deposition equipment, prior art solutions for front-side deposition cannot be applied to back-side deposition equipment, nor can they effectively change the thickness of the back-side film.

[0056] To overcome the aforementioned deficiencies in the prior art, the present invention provides a process chamber, a semiconductor device processing apparatus, a semiconductor device processing method, and a computer-readable storage medium. By placing a spray head on the back side of the wafer and adjusting the distance and / or deflection angle between the spray head and the back side of the wafer during the back side deposition process, the uniformity of the film thickness deposited on the back side of the wafer and the stress adjustment can be improved, thereby enhancing the processing quality of the semiconductor device.

[0057] In some non-limiting embodiments, the semiconductor device processing method provided in the third aspect can be implemented by the semiconductor device processing equipment provided in the second aspect. Specifically, the semiconductor device processing equipment may include one or more process chambers, wherein at least one process chamber is the process chamber provided in the first aspect.

[0058] Furthermore, in some non-limiting embodiments, the processing apparatus provided in the second aspect may also include a memory and a controller. The memory includes, but is not limited to, the computer-readable storage medium provided in the fourth aspect, on which computer instructions are stored. The controller is connected to the memory and configured to execute the computer instructions stored in the memory to implement the semiconductor device processing method provided in the third aspect.

[0059] Please refer to Figures 1 through 6. Figure 1 shows a schematic diagram of the structure of a process chamber according to some embodiments of the present invention. Figure 2 shows a schematic diagram of the arrangement of a lifting mechanism and a rotating mechanism according to some embodiments of the present invention. Figure 3 shows a cross-sectional schematic diagram of the lifting mechanism and the rotating mechanism according to some embodiments of the present invention. Figure 4 shows a three-dimensional schematic diagram of the lifting mechanism according to some embodiments of the present invention. Figure 5 shows a cross-sectional schematic diagram of the rotating mechanism according to some embodiments of the present invention. Figure 6 shows an enlarged view of the area indicated by the ellipse in Figure 5.

[0060] In the embodiment shown in Figure 1, the process chamber provided by the first aspect of the present invention includes a wafer support mechanism 11, a spray head 12, a lifting mechanism 13, and a rotating mechanism 14. Here, the wafer support mechanism 11 is disposed inside the process chamber to support the edge of the wafer 20 and expose the back side of the wafer 20. The spray head 12 is disposed below the wafer support mechanism 11 and is used to spray process gases onto the back side of the wafer 20 during back side deposition. The heating plate 15 is disposed above the wafer support mechanism 11 and is used to heat the front side of the wafer 20 during back side deposition. The lifting mechanism 13 is disposed below the spray head 12, and can be located above or below the bottom 16 of the process chamber, for raising and lowering the wafer support mechanism 11 during back side deposition to adjust the distance between the top surface of the spray head 12 and the back side of the wafer 20. The rotating mechanism 14 is also located below the spray head 12. It can be located above or below the bottom 16 of the process chamber. It is used to rotate the wafer support mechanism 11 during the back-side deposition of the wafer 20 to adjust the deflection angle between the spray head 12 and the back side of the wafer 20.

[0061] By adjusting the distance between the spray head 12 and the back surface of the wafer 20, this invention can effectively regulate the radial partial pressure of the process gas on the back surface of the wafer 20, thereby adjusting the film thickness distribution in the central and edge regions of the back surface of the wafer 20 during back surface deposition. Furthermore, by adjusting the deflection angle between the spray head 12 and the back surface of the wafer 20, this invention can effectively avoid the problem of uneven film thickness distribution caused by uneven gas exit rates around the spray head 12.

[0062] Furthermore, the wafer support mechanism 11 described above may include an edge ring and an edge ring support mechanism. Here, the edge ring is located below the wafer 20 and is used to surround and support the non-process area on the back edge of the wafer 20, while exposing the process area at the center of the back edge of the wafer 20. The edge ring support mechanism may be a ring structure or may be composed of multiple edge ring pins. Its upper end may be connected to the edge ring, while its lower end may be directly connected to the lifting mechanism 13 and / or the rotating mechanism 14 above the bottom 16 of the process chamber, or pass through the bottom 16 of the process chamber to connect to the lifting mechanism 13 and / or the rotating mechanism 14 below it, thereby lifting the wafer 20 under the drive of the lifting mechanism 13 and / or rotating the wafer 20 under the drive of the rotating mechanism 14.

[0063] Furthermore, as shown in Figures 1 and 2, the aforementioned process chamber may include multiple (e.g., three) lifting mechanisms 131-133 and multiple (e.g., three) rotating mechanisms 141-143, which are arranged circumferentially around the process chamber and maintain a certain angular interval (e.g., 120°). Here, the multiple lifting mechanisms 131-133 are all located below the spray head 12 and above or below the bottom 16 of the process chamber, and are each connected to an edge ring support rod for lifting the wafer via the edge ring support rod and the edge ring. Correspondingly, the multiple rotating mechanisms 141-143 are all located below the spray head 12 and above or below the bottom 16 of the process chamber, and are each connected to an edge ring support rod for rotating the wafer via the edge ring support rod and the edge ring.

[0064] Specifically, as shown in Figure 3, the bottom 16 of the process chamber provided by the present invention may be provided with multiple through holes. The third rotation shaft 31 of each rotation mechanism 141 to 143 may extend into the process chamber through the corresponding through holes to connect to the first rotational transmission member at the bottom of the wafer support mechanism 11, thereby driving the multiple edge ring support rods to rotate around the central axis of the edge ring through their own rotation. Here, the first rotational transmission member may be selected from belts or gears.

[0065] In addition, a fixed bracket 32 ​​may be provided below the process chamber. This fixed bracket 32 ​​is fixedly connected to the bottom 16 of the process chamber. As an example, the fixed bracket 32 ​​includes a support portion 321 and a guide rail block 322. The top end of the support portion 321 is fixedly connected to the bottom 16 of the process chamber. The guide rail block 322 is located on the side of the support portion 321 and is fixedly connected to it. In this embodiment, a guide rail groove may be further provided on one side of the fixed bracket 32. The guide rail groove opens from the side of the guide rail block 322 opposite to the support portion 321.

[0066] Alternatively, the lifting mechanism 13 can be located below the process chamber and connected to the fixed support 32, including a lifting support 331. The lifting support 331 is fixedly connected to the rotating mechanism 34 to drive the rotating mechanism 34 to perform lifting movements.

[0067] Further, as shown in Figure 4, the lifting mechanism 33 may also include a drive motor 332, a reducer 333, a threaded rod 334, and a threaded block 335. The drive motor 332, reducer 333, and threaded rod 334 are connected sequentially from bottom to top. Furthermore, the reducer 333 is also fixedly connected to the fixed bracket 32. The threaded rod 334 rotates under the drive of the reducer 333. The threaded block 335 is fitted around the threaded rod 334 to move up and down with the rotation of the threaded rod 334. One side of the threaded block 335 is embedded in the guide groove of the fixed bracket 32 ​​to ensure stable up and down movement. The other side of the threaded block 335 is fixedly connected to the lifting bracket 331 to drive the lifting bracket 331 to move up and down, thereby driving the rotating mechanism 34 to move up and down. As an example, the top end of the reducer 333 can be fixedly connected to the bottom end of the guide block 322 of the fixed bracket 32 ​​to stably reduce the speed of the drive motor 332. Here, the drive motor 332 can be a servo motor.

[0068] Furthermore, as shown in Figure 5, the rotating mechanism 34 can also be located below the process chamber, including a stator 341, a rotor 342, a drive member 343, a connector 344, at least one magnetic fluid seal 345, a magnetic fluid 346, and a telescopic tubular assembly 347. Specifically, the stator 341 is fixedly connected to the lifting bracket 331 and sleeved around the rotor 342 to drive the rotor 342 to rotate around the aforementioned third rotating shaft 31. The drive member 343 is located above the rotor 342 and is fixedly connected to the rotor 342. Furthermore, the drive member 343 is also sleeved around the third rotating shaft 31 and fixedly connected to it. The telescopic tubular assembly 347 is located above the drive member 343 and sleeved around the third rotating shaft 31. The top of the telescopic tubular assembly 347 is sealed to the bottom 16 of the process chamber. The bottom of the telescopic tubular assembly 347 is sealed to the top of the connector 344. At least one magnetic fluid seal 345 is sleeved around the drive member 343, forming a magnetic fluid receiving space between it and the outer wall of the drive member 343. Magnetic fluid 346 is located within the magnetic fluid receiving space. The top of the magnetic fluid seal 345 is sealed to the bottom of the connector 344, while its bottom is sealed to the top of the lifting bracket 331.

[0069] Those skilled in the art will understand that although the above embodiments place a magnetic fluid seal 345 around the drive member 343, this does not limit the number or placement of the magnetic fluid seals 345 in the rotating mechanism 34. Optionally, in other embodiments, those skilled in the art can also place any number of magnetic fluid seals at any location requiring sealing, according to actual sealing needs.

[0070] Furthermore, as an example, the top of the stator 341 can be fixedly connected to the lifting bracket 331 and may include an iron core and a coil. The coil is located between the iron core and the rotor 342. Under the influence of the magnetic field generated by the iron core and the coil, the rotor 342 rotates around the third rotating shaft 31, which in turn drives the drive component 343 to rotate, thereby driving the third rotating shaft 31 to rotate.

[0071] Furthermore, as an example, the bottom of the connector 1324 may be provided with a sliding groove. The top end of the drive member 1323 may extend into the sliding groove and slide in connection with the connector 1324 to enhance the rotational stability of the drive member 1323.

[0072] Since the driving component 343 needs to rotate, a certain clearance needs to be left between its top end and the connecting component 344. In order to achieve a seal on the top area of ​​the driving component 343, the present invention utilizes a magnetic fluid seal 345 and a magnetic fluid 346 to achieve a seal on the top area of ​​the driving component 343.

[0073] Specifically, the magnetic fluid 346 can be adsorbed onto the inner surface of the magnetic fluid seal 345 and the outer surface of the driving member 343. When the driving member 343 rotates, the magnetic fluid remains adsorbed, isolating the internal space of the driving member 343 from the outside. As an example, the magnetic fluid seal 345 and the connecting member 344 can be fixedly connected by fasteners. In addition, a sealing ring can be provided between the top of the magnetic fluid seal 345 and the bottom of the connecting member 344 to achieve a seal at the interface. Furthermore, the magnetic fluid seal 345 and the lifting bracket 331 can be fixedly connected by fasteners, and a sealing ring can also be provided between the bottom of the magnetic fluid seal 345 and the top of the lifting bracket 331 to achieve a seal at the interface.

[0074] Furthermore, as an example, the telescopic tubular assembly 347 may include a first fixing member, a bellows, and a second fixing member. The top and bottom ends of the bellows can be fixedly connected to the first fixing member and the second fixing member, respectively. The first fixing member is then sealed to the bottom 16 of the process chamber. Specifically, the first fixing member and the process chamber can be fixed together by fasteners, and a sealing ring can be provided between the top surface of the first fixing member and the bottom 16 of the process chamber to achieve interface sealing.

[0075] Furthermore, as shown in Figure 6, the rotating mechanism 34 may also include an air blowing device 348. The outer surface of the connector 344 is provided with an air inlet 61 connected to the air blowing device 348. An annular air passage 62 communicating with the air inlet 61 is embedded within the connector 344. The bottom of this annular air passage 62 is provided with multiple air outlets 63, the vertical distance between which is less than the vertical distance between the outer wall of the driving member 343 and the third rotating shaft 31. Thus, by continuously blowing air into the connector 344, the air blowing device 348 can use the blown airflow to prevent microparticles generated during chemical vapor deposition in the process chamber from falling into the magnetic fluid 346 of the rotating mechanism 34, thereby avoiding affecting the sealing effect of the magnetic fluid 346.

[0076] Thus, during the lifting and / or rotating of the wafer support mechanism 11, the lifting bracket 331 of the lifting mechanism 33 can move up and down with the threaded block 335, driving the rotating mechanism 34 to move up and down. The rotor 342 of the rotating mechanism 34 can rotate around the third rotating shaft 31 while lifting, thereby driving the drive component 343 to move up and down, and subsequently driving the rotating shaft 31 and the wafer 20 on the wafer support mechanism 11 to move up and down. Furthermore, during the rising of the wafer support mechanism 11, the telescopic tubular assembly 347 will shorten accordingly, and during the falling of the wafer support mechanism 11, the telescopic tubular assembly 347 will extend accordingly.

[0077] Those skilled in the art will understand that the rotating mechanism 34 shown in FIG5 is only a non-limiting embodiment provided by the present invention, intended to clearly illustrate the main concept of the present invention and provide some specific solutions that are easy for the public to implement, rather than being used to limit the scope of protection of the present invention.

[0078] Optionally, please refer to Figures 7 through 11. Figure 7 shows a front view of a rotating mechanism provided according to some embodiments of the present invention. Figure 8 shows a bottom view of a rotating mechanism provided according to some embodiments of the present invention. Figure 9 shows a cross-sectional view of a rotating mechanism provided according to some embodiments of the present invention. Figure 10 shows a three-dimensional view of a rotating sliding support provided according to some embodiments of the present invention. Figure 11 shows a three-dimensional view of a sliding column and a limiting ring provided according to some embodiments of the present invention.

[0079] In the embodiments shown in Figures 7-11, the rotating mechanism 70 may include a vacuum isolation ring 71, an active rotating component, and a passive rotating component. The vacuum isolation ring 71 is fitted around the third rotating shaft 31, with its top end sealed to the bottom 16 of the process chamber via a telescopic tubular assembly 347, and its bottom end sealed to the lifting mechanism 33. The passive rotating component is located inside the vacuum isolation ring 71 and is fixedly connected to the drive ring of the telescopic tubular assembly 347. The active rotating component is located outside the vacuum isolation ring 71, and drives the passive rotating component to reciprocate through magnetic force.

[0080] As an example, the active rotation component includes an active rotation block 72 and an active magnet 73. The active magnet 73 is disposed on the side of the active rotation block 72 facing the passive rotation component and is spaced at a predetermined distance from the vacuum isolation ring 71. The passive rotation component includes a passive rotation block 74 and a passive magnet 75. The passive magnet 75 is disposed on the side of the passive rotation block 74 facing the active rotation component and is spaced at a predetermined distance from the vacuum isolation ring 71 (i.e., neither the active magnet 73 nor the passive magnet 75 is in contact with the vacuum isolation ring 71).

[0081] Furthermore, on the side of the active rotating block 72 facing the passive rotating component, a plurality of evenly arranged strip-shaped active magnets 73 are fixedly connected. A certain gap is left between adjacent active magnets 73, and their magnetic poles pointing towards the center of the vacuum isolation ring 71 are all opposite. On the side of the passive rotating block 74 facing the active rotating component, a plurality of evenly arranged passive magnets 75 are fixedly connected. The passive magnets 75 have the same shape as the active magnets 73. The magnetic pole faces of the passive magnets 75 and the active magnets 73 are directly opposite, and their magnetic poles are all opposite.

[0082] As an example, the active magnet 73 can be configured as a single layer or multiple layers in the direction pointing towards the center of the vacuum isolation ring 71. The passive magnet 75 can also be configured as a single layer or multiple layers in the direction pointing towards the center of the vacuum isolation ring 71. In this way, by configuring multiple layers of magnets, the magnetic force can be effectively increased.

[0083] Furthermore, the aforementioned passive rotation assembly also includes a first passive rotation connector 76 and a second passive rotation connector 77 located within the 16 through holes at the bottom of the process chamber. The first passive rotation connector 76 is fixedly connected to the top end of the passive rotation block 74 and the side of the driving ring, and the second passive rotation connector 77 is fixedly connected to the bottom of the first passive rotation connector 76 and the bottom of the driving ring. Both the first passive rotation connector 76 and the second passive rotation connector 77 may be made of magnetically shielding material.

[0084] As an example, the first passive rotary connector 76 and the driving ring can be fixedly connected by a snap-fit ​​method. For example, the side wall of the driving ring may be provided with at least one slot for fixing the first passive rotary connector 76.

[0085] Furthermore, the bottom surface of the first passive rotary connector 76 may be provided with a guide rail 78. The top surface of the vacuum isolation ring 71 may be provided with a protrusion 79 extending into the guide rail 78 to increase the stability of the first passive rotary connector 76 during rotation.

[0086] Furthermore, the aforementioned active rotating block 72 is slidably connected to the vacuum isolation ring 71 via a first bearing and a second bearing. The first bearing is located above the active magnet 73, while the second bearing is located below the active magnet 73. The passive rotating block 74 is slidably connected to the vacuum isolation ring 71 via a third bearing and a fourth bearing. The third bearing is located above the passive magnet 75. The fourth bearing is located below the passive magnet 75. The protrusion 79 on the top surface of the vacuum isolation ring 71 is slidably connected to the passive rotating block 74 via a fifth bearing.

[0087] Furthermore, as shown in Figure 10, a rotary sliding support 101 can be provided between the bottom of the vacuum isolation ring 71 and the bottom of the passive rotating block 74, including a first sliding plate 101a, a plurality of sliding posts 101b, a limiting ring 101c, and a second sliding plate 101d. The first sliding plate 101a is located above the second sliding plate 101d. The plurality of sliding posts 101b and the limiting ring 101c are sandwiched between the first sliding plate 101a and the second sliding plate 101d. As shown in Figure 11, the plurality of sliding posts 101b are uniformly embedded in the circumference of the limiting ring 101c.

[0088] Furthermore, the aforementioned rotating mechanism 233 also includes a rotating drive assembly. This rotating drive assembly includes a stator and a rotor. The rotor is fixedly connected to the bottom of the active rotating assembly. The stator is fixedly connected to the process chamber via a fixed bracket 171 and is fitted around the rotor to drive the rotor to perform circumferential reciprocating rotational motion.

[0089] Optionally, please refer to Figures 12 to 14. Figure 12 shows a schematic diagram of the lifting and rotating mechanisms provided according to some embodiments of the present invention. Figure 13 shows a partially enlarged schematic diagram of region A in Figure 13. Figure 14 shows a partially enlarged schematic diagram of region B in Figure 13.

[0090] As shown in Figures 12-14, the aforementioned rotating mechanism can be located outside the process chamber and includes a rotating power mechanism and a rotating sealing mechanism 121. The rotating sealing mechanism 121 includes a rotating component 1211 and a fixed component 1212. The fixed component 1212 is fixedly and sealingly connected to the process chamber. The rotating component 1211 is fixedly and sealingly connected to the aforementioned third rotating shaft 31 and is movably and sealingly connected to the fixed component 1212. Furthermore, the rotating component 1211 is connected to the rotating power mechanism, so that the rotating component 1211 and the third rotating shaft 31 can be driven to perform reciprocating rotational operation via the rotating power mechanism.

[0091] As an example, the rotary sealing mechanism 121 may include one of a magnetohydrodynamic rotary sealing mechanism, a magnetic coupling rotary sealing mechanism, and a sealing ring rotary sealing mechanism. Specifically, in this embodiment, the rotary sealing mechanism 121 may be a magnetohydrodynamic rotary sealing mechanism, but it is not limited to this. For example, when the rotation speed is low, a simpler sealing ring rotary sealing mechanism may be used instead, but the sealing ring rotary sealing mechanism has wear problems, and the vacuum degree is not easy to guarantee. Alternatively, a magnetic coupling rotary sealing mechanism with a higher vacuum degree may be used instead, but the magnetic coupling rotary sealing mechanism has a complex structure and large volume. Therefore, the specific type of rotary sealing mechanism 311 can be selected according to the process requirements, and no excessive restrictions are imposed here.

[0092] Furthermore, as shown in Figure 13, the rotating component 1211 and the fixed component 1212 can be movably connected by bearings, and these bearings can include a radial bearing 12131 and an end-face bearing 12132. Specifically, the magnetohydrodynamic rotary sealing mechanism includes a rotating component 1211 and a fixed component 1212 with a concentric axis, and the rotating component 1211 and the fixed component 1212 are movably connected by the radial bearing 12131 and the end-face bearing 12132. This allows for a fixed connection between the rotating component 1211, the fixed component 1212, and the bearings via the fixed component support 1214, and enables the rotating component 1211 to rotate relative to the concentric axis via the bearings. Here, the combination of the radial bearing 12131 and the end-face bearing 12132, two different types of bearings, further ensures the concentricity and support capacity of the rotating component 1211 and the fixed component 1212, enabling precise and reliable relative rotation, and allowing the rotating component 1211 to rotate freely under the drive of the rotary power mechanism.

[0093] Furthermore, a gap 1215 can be designed between the rotating component 1211 and the fixed component 1212 to ensure that the rotating component 1211 does not contact the fixed component 1212 during rotation, thereby avoiding friction or jamming. However, since this gap 1215 connects the inside and outside of the process chamber, it needs to be sealed. Because the magnetorheological fluid 1216 has reliable sealing properties, can achieve a high vacuum level, and can reliably seal at both high and low rotational speeds, fully meeting the vacuum requirements of CVD equipment, a good seal can be achieved by injecting the magnetorheological fluid 1216 into the gap 1215. However, the location, specific structure, and sealing method of the rotary sealing mechanism 1212 are not limited to this.

[0094] Specifically, as shown in Figures 12-14, a purge gas guide ring 122 can be provided in the aforementioned process chamber, and a slit channel 123 is provided between the purge gas guide ring 122 and the aforementioned third rotating shaft 31. The width W of the slit channel 123 ranges from 0 mm to W ≤ 1 mm, and its length L ranges from L ≥ 5 mm. The blowing device can provide purge exhaust gas to the process chamber through the purge gas guide ring 122, which flows sequentially through the rotary sealing mechanism 121 and the slit channel 123, to form a pressure difference, thereby further forming an isolation channel to prevent foreign substances such as the magnetohydrodynamic fluid 1216 from entering the process chamber. Here, the purge gas is preferably an inert gas such as N2 or He. The appropriate purge gas can be selected according to different CVD process requirements to prevent the purge exhaust gas ejected from the slit channel 123 from mixing with the reaction gas after entering the process chamber, thus affecting the quality of the deposited film.

[0095] Furthermore, the width W of the aforementioned slit channel 123 can be selected as 0.5mm, 0.8mm, etc. The length L of the aforementioned slit channel 123 can be selected as 6mm, 10mm, etc., to meet design requirements and provide uniformly distributed purge exhaust gas.

[0096] Furthermore, the purge gas guide ring 122 may include a plurality of uniformly distributed holes 124. These holes 124 may be evenly distributed to ensure that the purge gas flows out evenly in the circumferential direction.

[0097] As shown in Figure 14, to ensure the uniform outflow of the purge gas, the present invention incorporates the aforementioned uniform gas distribution holes 124, allowing the purge gas to enter an annular groove from the interface. The bottom of the groove is provided with several uniformly distributed uniform gas distribution holes 124, which act as throttling devices, ensuring the purge gas flows out uniformly and forms a uniformly distributed purge exhaust gas, thereby creating a pressure difference. In this way, the present invention can form a barrier through the purge gas to prevent external substances from entering the process chamber and to prevent the magnetohydrodynamic fluid 1216 from contacting the reaction gas within the process chamber.

[0098] Furthermore, the plurality of air distribution holes 124 can be located on the same vertical line as the gap between the rotating member 1211 and the fixed member 1212 to improve the isolation effect. The morphology and distribution of the air distribution holes 124 are not limited here and can be set as needed.

[0099] Furthermore, as shown in Figure 13, the aforementioned rotating mechanism may also include a bellows 125 that is sealed and connected to the process chamber and the fixing member 1212, and a lifting power mechanism 126 located outside the process chamber and connected to the fixing member 1212. The lifting power mechanism 126 includes a drive motor and a transmission connector 127. The drive motor may include a servo motor, and the transmission connector 127 may include a belt or gears.

[0100] Specifically, in this embodiment, the fixing member 1212 can be fixed to the lifting power mechanism 126 via the flange. The lifting power mechanism 126 can be fixed to the process chamber. The rotating member 1211 can be connected to the drive motor via a belt or gear transmission, and is driven to rotate by the drive motor, thereby driving the wafer support mechanism 11 and the wafer to rotate.

[0101] Those skilled in the art will understand that, although in the embodiments shown in Figures 3 to 6, Figures 7 to 11, and Figures 12 to 14, the lifting mechanism and the rotating mechanism are located below the bottom 16 of the process chamber, these are only some non-limiting embodiments provided by the present invention, intended only to clearly illustrate the main concept of the present invention and to provide some specific solutions that are convenient for the public to implement, and are not intended to limit the scope of protection of the present invention.

[0102] Alternatively, in other embodiments, those skilled in the art can also move the lifting mechanism and / or rotating mechanism above the bottom 16 of the process chamber based on the above description, so as to achieve the same technical effect of rotating and / or lifting the wafer support mechanism 11.

[0103] Those skilled in the art will also understand that the embodiment shown in FIG1, which uses the lifting mechanism 13 and the rotating mechanism 14 to lift and / or rotate the wafer support mechanism 11 to adjust the distance and / or deflection angle between the spray head 12 and the back of the wafer 20, is only a few non-limiting embodiments provided by the present invention. It is intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0104] Optionally, please refer to Figures 2 and 15. Figure 15 shows a schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention.

[0105] In the embodiment shown in Figures 2 and 15, the process chamber provided by the present invention may include at least one lifting mechanism 13 and multiple rotating mechanisms 14. Here, the at least one lifting mechanism 13 is located below the spray head 12 and above or below the bottom 16 of the process chamber, and is connected to the spray head 12 for driving the spray head 12 to move up and down. The multiple (e.g., three) rotating mechanisms 14 are arranged circumferentially along the process chamber, all located below the spray head 12 and above or below the bottom 16 of the process chamber, and are respectively connected to a first rotating transmission member at the lower end of the edge ring support rod. This first rotating transmission member is used to rotate around the central axis of the edge ring via the rotation of its third rotating shaft 31, thereby driving the wafer 20 to rotate via the multiple edge ring support rods and the edge ring. Here, the first rotating transmission member may be selected from belts or gears.

[0106] Furthermore, the specific structure of the lifting mechanism 13 can be found in Figure 4 and the related text descriptions, while the specific structure of the rotating mechanism 14 can be found in Figures 5-6, 7-11, 13-14 and the related text descriptions, and will not be elaborated here.

[0107] Optionally, please refer to Figures 2 and 16. Figure 16 shows a schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention.

[0108] In the embodiments shown in Figures 2 and 16, the process chamber provided by the present invention may include multiple lifting mechanisms 13 and multiple rotating mechanisms 14. Here, the multiple (e.g., three) lifting mechanisms 13 are arranged circumferentially along the process chamber, all located below the spray head 12 and above or below the bottom 16 of the process chamber, and each is connected to an edge ring support rod for lifting the wafer 20 via the multiple edge ring support rods and the edge ring. The multiple (e.g., three) rotating mechanisms 14 are all located below the top 17 of the process chamber, their outer sides connected to the inner side of the process chamber sidewall, and their inner sides connected to a second rotating transmission member outside the edge ring via the aforementioned third rotating shaft 31. The rotation of the third rotating shaft 31 drives the second rotating transmission member to rotate around the central axis of the edge ring, thereby driving the wafer 20 to rotate via the edge ring. Here, the second rotating transmission member may be selected from belts or gears.

[0109] Furthermore, the specific structure of the lifting mechanism 13 can be found in Figure 4 and the related text descriptions, while the specific structure of the rotating mechanism 14 can be found in Figures 5-6, 7-11, 13-14 and the related text descriptions, and will not be elaborated here.

[0110] Optionally, please refer to Figures 2 and 17. Figure 17 shows a schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention.

[0111] In the embodiments shown in Figures 2 and 17, the process chamber provided by the present invention may include a plurality of lifting mechanisms 13 and at least one rotating mechanism 14. Here, the plurality of (e.g., three) lifting mechanisms 13 are arranged circumferentially along the process chamber, all located below the spray head 12 and above or below the bottom 16 of the process chamber, and each is connected to an edge ring support rod for lifting the wafer 20 via the multiple edge ring support rods and the edge ring. The heating plate 15 is located above the wafer support mechanism 11 and includes a first rotating shaft extending upward. The wafer support mechanism 11 also includes a link assembly 18, whose two ends are respectively connected to the heating plate 15 and the edge ring for driving the edge ring to rotate together with the heating plate 15. Specifically, the link assembly 18 may be selected from springs, hooks, and trigger mechanisms. The at least one rotating mechanism 14 is located above the heating plate 15 and above or below the top 17 of the process chamber, and is connected to the first rotating shaft of the heating plate 15 via its drive 343, for rotating the wafer 20 via the heating plate 15, the link assembly 18 and the edge ring.

[0112] Furthermore, the specific structure of the lifting mechanism 13 can be found in Figure 4 and the related text descriptions, while the specific structure of the rotating mechanism 14 can be found in Figures 5-6, 7-11, 13-14 and the related text descriptions, and will not be elaborated here.

[0113] Optionally, please refer to Figures 2 and 18. Figure 18 shows a schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention.

[0114] In the embodiments shown in Figures 2 and 18, the process chamber provided by the present invention may include a plurality of lifting mechanisms 13 and at least one rotating mechanism 14. Here, the plurality of (e.g., three) lifting mechanisms 13 are arranged circumferentially along the process chamber, all located below the spray head 12 and above or below the bottom 16 of the process chamber, and each is connected to an edge ring support rod for lifting and lowering the wafer 20 via the multiple edge ring support rods and the edge ring. The spray head 12 includes a downwardly extending second rotating shaft. The at least one rotating mechanism 14 is located below the spray head 12 and above or below the bottom 16 of the process chamber, and is connected to the second rotating shaft of the spray head 12 via its drive member 343 for rotating the spray head 12. Thus, the present invention can adjust the distance between the spray head 12 and the back surface of the wafer 20 in real time by lifting and lowering the spray head 12, thereby quickly adjusting the process window.

[0115] Furthermore, the specific structure of the lifting mechanism 13 can be found in Figure 4 and the related text descriptions, while the specific structure of the rotating mechanism 14 can be found in Figures 5-6, 7-11, 13-14 and the related text descriptions, and will not be elaborated here.

[0116] The working principle of the semiconductor device processing equipment described above will be described below with reference to some embodiments of semiconductor device processing methods. Those skilled in the art will understand that these embodiments of processing methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating modes of the semiconductor device processing equipment. Similarly, the semiconductor device processing equipment is also only one non-limiting implementation provided by the present invention, and does not constitute a limitation on the executing entity and execution order of the steps in these semiconductor device processing methods.

[0117] Please refer to Figure 19, which shows a schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention.

[0118] As shown in Figure 19, during the back-side deposition process on wafer 20, the processing equipment first places the wafer 20 to be processed onto the wafer support mechanism 11 in the process chamber during the wafer transfer process. Then, during the back-side deposition process, the processing equipment can raise and lower the wafer support mechanism 11 and / or the spray head 12 at least once via the lifting mechanism 13 to adjust the distance between the spray head 12 and the back side of wafer 20. This adjustment of the distance between the spray head 12 and the back side of wafer 20 regulates the partial pressure of the process gas in different regions on the back side of wafer 20. Furthermore, during the back-side deposition process, the processing equipment can also rotate the wafer support mechanism 11 and / or the spray head 12 at least once via the rotating mechanism 14 to adjust the deflection angle between the spray head 12 and the back side of wafer 20. This adjustment of the process gas temperature and concentration distribution on the back side of wafer 20 avoids uneven film thickness distribution caused by uneven temperature and gas distribution around the spray head 12. After that, in response to the completion of the backside deposition process, the processing equipment can remove the processed wafer from the process chamber.

[0119] In addition, please refer to Figures 20A to 20E. Figures 20A to 20E show schematic diagrams of the state of the process chamber provided according to some embodiments of the present invention in multiple processing flows.

[0120] As shown in Figure 20A, during the process of placing the wafer 20 to be processed onto the wafer support mechanism 11, the processing equipment provided by the present invention can first lower the wafer support mechanism 11 and / or the spray head to a preset wafer transfer position via the lifting mechanism 13, and then transfer the wafer 20 to be processed into the process chamber via the robot arm 30. Then, as shown in Figure 20B, the processing equipment can raise multiple wafer lifting pins 19 to support the transferred wafer 20 and withdraw the robot arm 30 from the process chamber. Next, as shown in Figure 20C, the processing equipment can lower the multiple wafer lifting pins 19 to place the wafer 20 onto the wafer support mechanism 11.

[0121] Subsequently, as shown in Figures 20D and 20E, before performing the back-side deposition process on the received wafer 20, the processing equipment can first raise the wafer support mechanism 13 and / or the spray head 12 to the corresponding process positions via the lifting mechanism 13. Then, during the back-side deposition process on the wafer 20, the wafer support mechanism 11 and / or the spray head 12 are raised and lowered at least once via the lifting mechanism 13 to adjust the distance between the spray head 12 and the back side of the wafer 20, and / or the wafer support mechanism 11 and / or the spray head 12 are rotated at least once via the rotation mechanism 14 to adjust the deflection angle between the spray head 12 and the back side of the wafer 20.

[0122] Subsequently, in response to the completion of the back-side deposition process on wafer 20, the processing equipment can operate in the order of Figures 20C to 20A. First, multiple wafer lifting pins 19 are raised to support the wafer 20 to be transferred out. Then, the wafer support mechanism 11 and / or spray head 12 are lowered to the above-mentioned wafer transfer position via the lifting mechanism 13. Finally, the processed wafer 20 is taken out of the process chamber by the robot arm 30.

[0123] Those skilled in the art will understand that the wafer 20 transfer and processing flow shown in Figures 20A to 20E is only a non-limiting embodiment of the structure in Figure 1 where both the lifting mechanism 13 and the rotating mechanism 14 are located below the process chamber. It is intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0124] Alternatively, in other embodiments, those skilled in the art can also adjust the wafer 20 transfer and backside deposition methods based on any of the lifting and rotating structures in Figures 15-18 to achieve similar technical effects, which will not be elaborated here.

[0125] Furthermore, in some embodiments, the above-mentioned at least one lifting and rotating motion can preferably be reciprocating lifting and / or reciprocating rotation. Please refer specifically to Figure 21, which shows a schematic diagram of reciprocating rotation according to some embodiments of the present invention.

[0126] As shown in Figure 23, for the reciprocating rotation adjustment method, the deflection angle range of the rotating mechanism 14 can be 0° < θ ≤ 360°, and is preferably 90°, 180° or 360°. During the back-side thin film deposition process, the processing equipment can select one or more reciprocating rotations according to the actual process requirements to achieve the best film uniformity.

[0127] As an example, during the reciprocating rotation, the rotating mechanism 14 can start from the initial position O1 and rotate a first angle (e.g., 180°) in a first direction (e.g., clockwise) and then rotate a second angle (e.g., 180°) in the opposite second direction (e.g., counterclockwise) to complete one reciprocating rotation. At this time, the marker O2 returns to the initial position O1 again.

[0128] Similarly, the rotating mechanism 14 can start from the initial position O1 and rotate a first angle (e.g., 360°) in a first direction (e.g., counterclockwise) and then rotate a second angle (e.g., 360°) in the opposite second direction (e.g., clockwise) to complete one reciprocating rotation. At this time, the marker O2 returns to the initial position O1 again.

[0129] Here, the rotational speed during reciprocating rotation can be independently controlled according to process requirements. The number of reciprocating rotations M can range from M≥1, including but not limited to 10 times, 20 times, 100 times, etc., and is not limited here. Since the rotating mechanism 14 does not rotate continuously, in the embodiments of the rotating heating plate 15 and the rotating spray head 12 shown in Figures 17 and 18, their power supply lines and gas supply lines will not become entangled due to continuous rotation in the same direction.

[0130] Furthermore, as an example, the aforementioned rotating mechanism 14 can pause for a period of time after completing the rotation in the first direction, and then rotate in the opposite second direction to complete one reciprocating rotation.

[0131] Furthermore, as an example, if the first angle is not equal to the second angle, the rotating mechanism 14 can also rotate from the starting position to the first position in the first direction by the first angle in the first reciprocating rotation, and then rotate in the opposite second direction by the second angle to reach a transition position. Then, in the second reciprocating rotation, it can rotate in the first direction by the second angle, and then rotate in the opposite second direction by the first angle. In this way, the marker O2 can be returned to the starting position O1 again through a combined reciprocating method.

[0132] In addition, in some other non-reciprocating rotation embodiments, the rotation mechanism 14 may rotate the spray head 12 by 90°, 180° or 360° once or multiple times during the back deposition process to overcome the problem of uneven back film thickness caused by factors such as uneven air output from the spray head 12, uneven heating of the heating plate 14, and insufficient processing accuracy of the process chamber.

[0133] Those skilled in the art will also understand that although the present invention describes the location, structure, and operating principle of each part, module, and mechanism of the process chamber in detail, this does not necessarily mean that they belong to different embodiments. Unless there is mutual conflict or explicit exclusion, those skilled in the art can arbitrarily combine the various figures and their corresponding textual content to understand them as a corresponding complete embodiment.

[0134] In summary, the process chamber, semiconductor device processing equipment, semiconductor device processing method, and computer-readable storage medium provided by the present invention can all improve the uniformity of the film thickness deposited on the back side of the wafer by placing the spray head on the back side of the wafer and adjusting the distance and / or deflection angle between the spray head and the back side of the wafer during the back side deposition process, thereby improving the processing quality of semiconductor devices.

[0135] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0136] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A process chamber, characterized in that, include: A wafer support mechanism, located inside the process chamber, is used to support the edge of the wafer and expose the back side of the wafer; A spray head, located below the wafer support mechanism, is used to spray process gases onto the back side of the wafer; A lifting mechanism is used to lift the wafer support mechanism and / or the spray head during the back-side deposition process of the wafer, so as to adjust the distance between the spray head and the back side of the wafer; as well as A rotating mechanism is used to rotate the wafer support mechanism and / or the spray head during the back-side deposition process of the wafer to adjust the deflection angle between the spray head and the back side of the wafer.

2. The process chamber as described in claim 1, characterized in that, The wafer support mechanism includes: An edge ring for supporting the edge of the wafer and exposing the back side of the wafer; and Multiple edge ring support rods are used to connect the edge rings to the lifting mechanism and / or the rotating mechanism to lift the wafer under the drive of the lifting mechanism and / or rotate the wafer under the drive of the rotating mechanism.

3. The process chamber as described in claim 2, characterized in that, The process chamber includes multiple lifting mechanisms and multiple rotating mechanisms, which are arranged circumferentially along the process chamber. Multiple lifting mechanisms are located below the spray head and above or below the bottom of the process chamber, and are each connected to an edge ring support rod for lifting the wafer via the edge ring support rod and the edge ring. Multiple rotating mechanisms are located below the spray head and above or below the bottom of the process chamber, and are each connected to an edge ring support rod for rotating the wafer via the edge ring support rod and the edge ring.

4. The process chamber as described in claim 2, characterized in that, The process chamber includes at least one of the lifting mechanisms and multiple of the rotating mechanisms, wherein, At least one of the lifting mechanisms is located below the spray head and above or below the bottom of the process chamber, and is connected to the spray head for driving the spray head to move up and down. Multiple rotating mechanisms are arranged circumferentially along the process chamber, located below the spray head and above or below the bottom of the process chamber, and each is connected to an edge ring support rod for rotating the wafer via the edge ring support rod and the edge ring.

5. The process chamber as described in claim 2, characterized in that, The process chamber includes multiple lifting mechanisms and at least one rotating mechanism, wherein, Multiple lifting mechanisms are arranged circumferentially along the process chamber, located below the spray head and above or below the bottom of the process chamber, and each is connected to an edge ring support rod for lifting the wafer via the edge ring support rod and the edge ring.

6. The process chamber as described in claim 5, characterized in that, Multiple rotating mechanisms are located below the top of the process chamber, with their outer sides connected to the inner side of the process chamber sidewall and their inner sides connected to the outer side of the edge ring, for rotating the wafer via the edge ring.

7. The process chamber as described in claim 5, characterized in that, The process chamber also includes a heating plate located above the wafer support mechanism and includes an upwardly extending first rotation axis. The wafer support mechanism further includes a linking assembly, whose two ends are respectively connected to the heating plate and the edge ring, wherein the linking assembly includes a spring, a hook, and / or a triggering mechanism. At least one of the rotating mechanisms is located above the heating plate and above or below the top of the process chamber, and is connected to the first rotating shaft for rotating the wafer via the heating plate, the link assembly, and the edge ring.

8. The process chamber as described in claim 5, characterized in that, The spray head also includes a downwardly extending second rotating shaft. At least one of the rotating mechanisms is located below the spray head and above or below the bottom of the process chamber, and is connected to the second rotating shaft for driving the spray head to rotate via the second rotating shaft.

9. The process chamber as described in claim 3 or 4, characterized in that, The wafer support mechanism further includes a first rotary transmission component. One end of each of the plurality of edge ring support rods is connected to the edge ring, and the other end is connected to the first rotary transmission component. The first rotary transmission component is selected from belts or gears. The rotating mechanism includes a stator, a rotor, a drive component, and a third rotating shaft. The stator is fixedly connected to the bottom of the process chamber and is used to drive the rotor to rotate around the third rotating shaft. The drive component is sleeved between the first end of the third rotating shaft and the rotor and is used to drive the first end of the third rotating shaft to rotate with the rotor, so as to drive the multiple edge ring support rods to rotate around the central axis of the edge ring via the first rotating transmission component connected to the second end of the third rotating shaft.

10. The process chamber as described in claim 6, characterized in that, The wafer support mechanism further includes a second rotary transmission component connected to the edge ring, wherein the second rotary transmission component is selected from a belt or a gear. The rotating mechanism includes a stator, a rotor, a driving component, and a third rotating shaft. The stator is fixedly connected to the inner side of the sidewall of the process chamber and drives the rotor to rotate around the third rotating shaft. The driving component is sleeved between the first end of the third rotating shaft and the rotor, and is used to drive the first end of the third rotating shaft to rotate with the rotor, so as to drive the edge to rotate around its central axis via the second rotating transmission component connected to the second end of the third rotating shaft.

11. The process chamber as described in claim 7, characterized in that, The rotating mechanism includes a stator, a rotor, and a driving component. The stator is fixedly connected to the top of the process chamber and is used to drive the rotor to rotate around the first rotating axis. The driving component is sleeved between the first rotating axis and the rotor and is used to drive the heating plate to rotate with the rotor via the first rotating axis.

12. The process chamber as described in claim 8, characterized in that, The rotating mechanism includes a stator, a rotor, and a driving component. The stator is fixedly connected to the bottom of the process chamber and is used to drive the rotor to rotate around the second rotating axis. The driving component is sleeved between the second rotating axis and the rotor and is used to drive the spray head to rotate with the rotor via the second rotating axis.

13. The process chamber as described in any one of claims 3 to 5, characterized in that, The process chamber also includes a fixed support, which is located above or below the bottom of the process chamber and is fixedly connected to the bottom of the process chamber. The lifting mechanism includes a lifting bracket, a drive motor, a reducer, a threaded rod, and a threaded block. The drive motor, the reducer, and the threaded rod are connected in sequence. The reducer is also fixedly connected to the fixed bracket. The threaded rod rotates under the drive of the reducer. The threaded block is sleeved around the threaded rod to move up and down with the rotation of the threaded rod. One side of the threaded block is embedded in the guide groove on one side of the fixed bracket, while the other side is fixedly connected to the lifting bracket to drive the lifting bracket connected to the edge ring support rod or the spray head to move up and down.

14. The process chamber as described in claim 13, characterized in that, The rotating mechanism includes a connector and a telescopic tubular assembly. The connector is provided with a sliding groove, and the driving component of the rotating mechanism extends into the sliding groove to slide and connect the connector. The telescopic tubular assembly is sleeved around the rotating shaft of the rotating mechanism, and its two ends are respectively sealed and connected to the bottom of the process chamber and the connector.

15. The process chamber as described in claim 14, characterized in that, The rotating mechanism further includes at least one magnetic fluid seal, wherein the at least one magnetic fluid seal is sleeved around the periphery of the driving member and forms a magnetic fluid receiving space between it and the outer side wall of the driving member, and the magnetic fluid receiving space contains magnetic fluid.

16. The process chamber as described in claim 15, characterized in that, Also includes: The purge gas guide ring has a slit channel between itself and the rotation shaft of the rotating mechanism, and includes uniform... Distributed exhaust ports, wherein the purge gas guide ring provides purge exhaust gas that is uniformly distributed in the circumferential direction to the process chamber via the magnetic fluid seal and the slit channel.

17. The process chamber as described in claim 13, characterized in that, The rotating mechanism also includes an air blowing device. The outer side of the connector is provided with an air inlet connected to the air blowing device. An annular air passage communicating with the air inlet is embedded in the connector. The bottom of the annular air passage is provided with multiple air outlets. The vertical distance between the air outlets and the rotating shaft is less than the vertical distance between the outer side wall of the driving member and the rotating shaft.

18. A semiconductor device processing apparatus, characterized in that, Includes the process chamber as described in any one of claims 1 to 17.

19. A method for fabricating a semiconductor device, characterized in that, Includes the following steps: The wafer to be processed is placed on the wafer support mechanism in the process chamber of the semiconductor device processing equipment as described in claim 18; During the back-side deposition process on the wafer, the wafer support mechanism and / or the spray head are raised and lowered at least once via the lifting mechanism of the process chamber to adjust the distance between the spray head and the back side of the wafer, and / or the wafer support mechanism and / or the spray head are rotated at least once via the rotation mechanism of the process chamber to adjust the deflection angle between the spray head and the back side of the wafer. as well as In response to the completion of the backside deposition process, the processed wafer is removed from the process chamber.

20. The processing method as described in claim 19, characterized in that, The step of rotating the wafer support mechanism and / or the spray head at least once via the rotation mechanism of the process chamber to adjust the deflection angle between the spray head and the back surface of the wafer includes: Starting from a preset starting position, the deflection angle between the spray head and the back surface of the wafer is adjusted by at least one reciprocating rotation, first rotating the spray head by a first angle in a preset first direction and then rotating it by a second angle in the opposite second direction.

21. The processing method as described in claim 19, characterized in that, It also includes the following steps: Before placing the wafer to be processed into the wafer support mechanism, the wafer support mechanism and / or the spray head are lowered to a preset wafer transfer position via the lifting mechanism. Before performing the back-side deposition process on the received wafer, the wafer support mechanism and / or the spray head are first raised to a preset process position via the lifting mechanism; and Before the processed wafer is removed from the process chamber, the wafer support mechanism and / or the spray head are lowered to the wafer transfer position via the lifting mechanism.

22. A computer-readable storage medium having computer instructions stored thereon, characterized in that, When the computer instructions are executed by the processor, the method for processing the semiconductor device as described in any one of claims 19 to 21 is implemented.

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