Integrated device and integrated module

Abstract

An integrated device and an integrated module. A radio frequency assembly comprises a substrate, a first radio frequency device, a second radio frequency device, a first external via, and a first connection structure. The substrate has a first surface and a second surface opposite each other. The first radio frequency device is located on the first surface of the substrate, and the second radio frequency device is located on the second surface of the substrate. The first external via extends through the substrate from the first surface to the second surface. The first connection structure is located within the first external via and electrically connects the first radio frequency device and the second radio frequency device through the first external via.

Description

Integrated devices and integrated modules

[0001] This application claims priority to Chinese Patent Application No. 202411215690.2, filed on August 30, 2024, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] At least one embodiment of this disclosure relates to an integrated device and an integrated module. Background Technology

[0003] The current market demands that electronic products be lightweight, portable, and high-performance, especially end products such as mobile phones, tablets, and wearable devices, which require increasingly smaller sizes and higher performance. For radio frequency (RF) modules, a crucial component of these end products, improving performance is also an urgent need while meeting the requirements for size reduction.

[0004] Typically, in integrated module solutions, multiple discrete devices are placed on the same side of the substrate and interconnected with each other. Therefore, the size reduction of the integrated module that can be achieved is limited. Furthermore, the integration of the module mainly relies on 2.5D advanced packaging methods. Signal communication between two discrete devices is achieved through an interposer or interconnect layer. The devices are flip-chip soldered onto the interposer or interconnect layer, and 1 to 2 RDL traces are fabricated on the surface of the interposer or interconnect layer as signal transmission channels. There is a certain transmission distance, which leads to signal loss. Summary of the Invention

[0005] This disclosure provides at least one embodiment of an integrated device, the radio frequency (RF) component including: a substrate, a first RF device, a second RF device, a first external via, and a first connection structure. The substrate has a first surface and a second surface opposite to each other; the first RF device is located on the first surface of the substrate; the second RF device is located on the second surface of the substrate; the first external via extends through the substrate from the first surface to the second surface; the first connection structure is located in the first external via and electrically connects the first RF device and the second RF device via the first external via.

[0006] For example, an embodiment of this disclosure provides an integrated device including: a substrate, a first external via, and a first connection structure. The substrate is located on a first side of a first insulating layer and has a first surface away from the first insulating layer and a second surface close to the first insulating layer, the first surface and the second surface being opposite to each other; the first radio frequency device includes an upper portion located on the first surface of the substrate and a lower portion located on the second surface of the substrate, the first insulating layer covering the second surface of the substrate and the lower portion of the first radio frequency device; the second radio frequency device is located on the side of the first insulating layer away from the substrate; the first external via extends through the substrate from the first surface to the second surface; the first connection structure is located in the first external via and electrically connects a first conductive element of the upper portion of the first radio frequency device and a second conductive element of the lower portion of the first radio frequency device via the first external via, the second conductive element being electrically connected to the second radio frequency device through the via located in the first insulating layer.

[0007] For example, in an embodiment of the present disclosure, the integrated device further includes an internal connecting hole that extends through the substrate from the first surface to the second surface; the first radio frequency device includes a second connection structure located in the internal connecting hole, the second connection structure electrically connecting the upper part of the first radio frequency device and a third conductive element of the lower part of the first radio frequency device via the internal connecting hole.

[0008] For example, in an integrated device provided in one embodiment of this disclosure, the third conductive element is disconnected from the second radio frequency device; or, the inner connecting hole is reused as the first outer connecting hole, and the third conductive element is reused as the second conductive element and electrically connected to the second radio frequency device.

[0009] For example, in an integrated device provided in one embodiment of this disclosure, the first radio frequency device includes a first element, the first element of the first radio frequency device includes a first portion located on the first surface and a second portion located on the second surface; the upper part includes the first portion, and the second portion serves as a third conductive element of the lower part; the internal connecting hole includes a first internal connecting hole, and the second connection structure located in the first internal connecting hole electrically connects the first portion of the first element of the first radio frequency device and the second portion of the first element of the first radio frequency device via the first internal connecting hole.

[0010] For example, in an integrated device provided in one embodiment of this disclosure, the first radio frequency device includes a second element located on the first surface, the internal communication hole includes a second internal communication hole, and the second connection structure located in the second internal communication hole electrically connects the second element of the first radio frequency device to a second portion of the first element of the first radio frequency device via the second internal communication hole.

[0011] For example, in an integrated device provided in an embodiment of this disclosure, a first connection terminal of a first portion of a first element of the first radio frequency device is connected to a first end of the first connection structure near the first surface, and a second end of the first connection structure near the second surface is connected to the second radio frequency device via a second conductive element; a second element of the first radio frequency device is connected to a second connection terminal of the first portion of the first element of the first radio frequency device.

[0012] For example, in an integrated device provided in one embodiment of this disclosure, the first external connecting hole is located outside the edge of the internal connecting hole near the substrate.

[0013] For example, in an integrated device provided in one embodiment of this disclosure, the first external connecting hole is disposed along the edge of the substrate.

[0014] For example, in an integrated device provided in one embodiment of this disclosure, the first external connecting hole is located in the apex corner region of the substrate.

[0015] For example, one embodiment of this disclosure provides an integrated device including: a substrate, a first external via, and a first connection structure. The substrate has a first surface and a second surface opposite to each other, wherein the substrate serves as the first insulating layer, the first radio frequency device is located on the first surface of the substrate, and the second radio frequency device is located on the second surface; the first external via extends through the substrate from the first surface to the second surface; the first connection structure is located in the first external via and electrically connects the first radio frequency device and the second radio frequency device via the first external via.

[0016] For example, in an integrated device provided in one embodiment of this disclosure, the first external connecting hole is disposed along the edge of the substrate or located in the middle region of the substrate.

[0017] For example, an embodiment of the integrated device provided in this disclosure further includes: an input or output signal terminal, a second external communication via, and a third connection structure. The input or output signal terminal is located on a second surface of the substrate; the second external communication via extends through the substrate from the first surface to the second surface; the third connection structure is located in the second external communication via. The third connection structure connects the first radio frequency device and the input signal terminal through the second external communication via, and is configured to provide an input signal to the first radio frequency device via the second external communication via, or the third connection structure connects the first radio frequency device and the output signal terminal through the second external communication via, and is configured to output the output signal of the first radio frequency device via the second external communication via.

[0018] For example, in an integrated device provided in one embodiment of this disclosure, the second external connecting hole is disposed along the edge of the substrate or located in the middle region of the substrate.

[0019] For example, in an embodiment of the present disclosure, the integrated device includes a first radio frequency (RF) device comprising a first element and a second element, and the second RF device comprising a first element and a second element; the integrated device includes a plurality of first external connecting holes and a plurality of first connection structures respectively located in the plurality of first external connecting holes, the plurality of first external connecting holes including a first sub-external connecting hole and a second sub-external connecting hole, and the plurality of first connection structures including a first sub-connection structure located in the first sub-external connecting hole and a second sub-connection structure located in the second sub-external connecting hole; the first sub-connection structure electrically connects the first element of the first RF device and the first element of the second RF device via the first sub-external connecting hole, and the second sub-connection structure electrically connects the second element of the first RF device and the second element of the second RF device via the second sub-external connecting hole.

[0020] For example, in an integrated device provided in an embodiment of this disclosure, the substrate includes a first sub-substrate and a second sub-substrate bonded together. The first sub-substrate and the second sub-substrate are distributed with upper and lower surfaces opposite each other. The lower surface of the first sub-substrate and the upper surface of the second sub-substrate are attached to each other so that the first sub-substrate and the second sub-substrate are bonded together. The upper surface of the first sub-substrate serves as the first surface of the substrate, and the lower surface of the second sub-substrate serves as the second surface of the substrate. The first external connecting hole has a first sub-through hole penetrating the first sub-substrate and a second sub-through hole penetrating the second sub-substrate. One end of the first sub-through hole and one end of the second sub-through hole are mated to form the first external connecting hole penetrating the entire substrate.

[0021] For example, in an integrated device provided in one embodiment of this disclosure, the first external via is a via unit composed of a plurality of sub-vias close to each other, the first connection structure includes a plurality of sub-parts located in the plurality of sub-vias, the first end of each of the plurality of sub-parts is connected to the first radio frequency device, and the second end of each of the plurality of sub-parts is connected to the second radio frequency device; or, the first external via includes only one via penetrating the substrate, the first end of the first connection structure is connected to the first radio frequency device, and the second end of the first connection structure is connected to the second radio frequency device.

[0022] For example, in an integrated device provided in one embodiment of this disclosure, the first connection structure includes a first conductive layer and a columnar second conductive layer. The first conductive layer and the columnar second conductive layer together fill the first external connecting hole. The first conductive layer is located between the columnar second conductive layer and the sidewall of the first external connecting hole, and covers the sidewall of the first external connecting hole and the side surface of the columnar second conductive layer.

[0023] For example, in an integrated device provided in one embodiment of this disclosure, the first radio frequency device further includes a connection conductive layer, the connection conductive layer being located on at least one of the first surface and the second surface of the substrate, covering at least one of the first surface and the second surface and the first external connecting hole, and in contact with the second conductive layer and the first conductive layer; the material of the connection conductive layer is the same as the material of the first conductive layer.

[0024] At least one embodiment of this disclosure also includes an integrated module comprising an integrated plurality of any of the integrated components provided according to embodiments of this disclosure. Attached Figure Description

[0025] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings of the embodiments will be briefly described below. Obviously, the drawings described below only relate to some embodiments of the present invention, and are not intended to limit the present invention.

[0026] Figure 1 is a schematic diagram of the structure of a radio frequency component provided in an embodiment of the present disclosure;

[0027] Figure 2 is a three-dimensional schematic diagram of a portion of the structure of the radio frequency component shown in Figure 1;

[0028] Figure 3 is a schematic diagram of another structure of the first external connecting hole;

[0029] Figure 4 is a schematic diagram of another radio frequency component provided in an embodiment of the present disclosure;

[0030] Figure 5 is a three-dimensional schematic diagram of a portion of the structure of the radio frequency component shown in Figure 4;

[0031] Figure 6 is a three-dimensional schematic diagram of a partial structure of another radio frequency component;

[0032] Figure 7 is a schematic diagram of another radio frequency component provided in an embodiment of the present disclosure;

[0033] Figure 8 is a schematic diagram of another radio frequency component provided in an embodiment of the present disclosure;

[0034] Figure 9 is a schematic diagram of another radio frequency component provided in an embodiment of this disclosure;

[0035] Figures 10 to 29 are schematic diagrams of a method for manufacturing a radio frequency component according to an embodiment of the present disclosure;

[0036] Figures 30 to 32 are schematic diagrams of another method for manufacturing a radio frequency component according to an embodiment of this disclosure. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the described embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0038] Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as "inner," "outer," "upper," and "lower" are used only to indicate relative positional relationships; these relative positional relationships may change accordingly when the absolute position of the described object changes.

[0039] As used in this disclosure, the characteristics such as "parallel," "perpendicular," and "identical" include the strict meanings of "parallel," "perpendicular," and "identical," as well as cases where "substantially parallel," "substantially overlapping," and "substantially identical" include a certain degree of error, taking into account measurement and errors associated with the measurement of a specific quantity (e.g., limitations of the measurement system), and represent the acceptable deviation range for a specific value as determined by a person skilled in the art. For example, "substantially" can mean within one or more standard deviations, and unless otherwise specified, can mean within 10% or 5% of the deviation of said value.

[0040] The accompanying drawings in this disclosure are not drawn to scale, and the number of the first external connecting via, internal connecting via, and RF devices in the RF assembly is not limited to the quantities shown in the drawings. The specific dimensions and quantities of each structure can be determined according to actual needs. The accompanying drawings described in this disclosure are only structural schematic diagrams.

[0041] At least one embodiment of this disclosure provides an integrated device, which includes: a first insulating layer, a first radio frequency (RF) device, and a second RF device. The first RF device is located on a first side of the first insulating layer; the second RF device is located on a second side of the first insulating layer, the second side of the first insulating layer being opposite to the first side of the first insulating layer, and the first RF device and the second RF device are electrically connected through a via located in the first insulating layer.

[0042] At least one embodiment of this disclosure also includes an integrated module comprising an integrated plurality of any of the integrated devices provided according to embodiments of this disclosure.

[0043] For example, FIG1 is a schematic diagram of the structure of a radio frequency component provided in an embodiment of the present disclosure. Referring to FIG1, the integrated device 10 includes: a substrate 1, a first insulating layer L1, a first external communication hole OV1, and a first connection structure C1. The substrate 1 has a first surface S1 and a second surface S2 opposite to each other. The first insulating layer L1 is located on the second surface S2 of the substrate 1, that is, the substrate 1 is located on the first side of the first insulating layer L1. The substrate 1 has a first surface S1 away from the first insulating layer L1 and a second surface S2 close to the first insulating layer L1, and the first surface S1 and the second surface S2 are opposite to each other. The first radio frequency device 01 includes an upper portion 011 located on the first surface S1 of the substrate 1 and a lower portion 012 located on the second surface S2 of the substrate 1. The first insulating layer L1 covers the second surface S2 of the substrate 1 and the lower portion 012 of the first radio frequency device 01. The second radio frequency device 02 is located on the side of the first insulating layer L1 away from the substrate 11. A first external connecting hole OV1 extends through the substrate 1 from the first surface S1 to the second surface S2. A first connection structure C1 is located in the first external connecting hole OV1 and electrically connects the first conductive element 11a of the upper part 011 of the first radio frequency device 01 and the second conductive element 13 of the lower part 012 of the first radio frequency device 01 via the first external connecting hole OV1. The second conductive element 13 is electrically connected to the second radio frequency device 02 through a via V3 located in the first insulating layer L1. Thus, the conductive element of the first radio frequency device 01 located on the first surface S1 of the substrate 1 is electrically connected to the second radio frequency device 02 located on the second surface S2 side of the substrate 1.

[0044] Referring to FIG1, the integrated device 10 provided according to at least one embodiment of the present disclosure utilizes a first external connecting hole OV1 and a via V3 located in the first insulating layer L1 to electrically connect a conductive element of the first radio frequency device 01 located on the first surface S1 of the substrate 1 to a second radio frequency device 02 located on the second surface S2 of the substrate 1. This enables the conductive element of the first radio frequency device 01 located on the first surface S1 of the substrate 1 and the second radio frequency device 02 located on the second surface S2 of the substrate 1 to be electrically connected to each other through the first external connecting hole OV1, the first connection structure C1 located in the first external connecting hole OV1, and the via V3 located in the first insulating layer L1. Signal transmission is achieved between different radio frequency devices bridging the two sides of the substrate 1, thereby achieving at least the following technical effects.

[0045] First, in this embodiment, two devices with different radio frequency functions that need to be interconnected are respectively disposed on both sides of the substrate, or, among the radio frequency devices that need to be interconnected, a part of one radio frequency device is disposed on the first side of the substrate and the other radio frequency device is disposed on the second side of the substrate. In this case, the two radio frequency devices that need to be interconnected are stacked in the longitudinal direction to form a three-dimensional arrangement. Compared with the case where the two radio frequency devices are all arranged in a planar manner on the same side of the substrate (i.e., the two radio frequency devices are not stacked in the longitudinal direction perpendicular to the first surface of the substrate), the total area occupied by multiple radio frequency devices can be significantly reduced. For example, in some radio frequency modules that integrate multiple radio frequency components, the total area occupied by multiple radio frequency devices can be reduced by 50%, thereby improving the integration of radio frequency devices and miniaturizing the size.

[0046] Secondly, the signal transmission distance between the conductive parts of the radio frequency devices that are electrically connected to each other through the first external through-hole is basically the same as the thickness of the substrate. It is not necessary to make the wires used to connect the interconnected radio frequency devices wind around or even cross layers in order to avoid signal lines that are all located on the same side of the substrate. This shortens the signal transmission distance between the two interconnected radio frequency devices and reduces signal loss.

[0047] Third, the signal transmission path between the two interconnected RF devices is from the first RF device 01 through the first external connecting hole OV1 and the via V3 located in the first insulating layer L1 directly to the second RF device 02, without passing through an excessively long winding wire to transmit the signal. The interconnection path between the RF devices is shortened, thereby improving the efficiency of signal transmission. In addition, the number of interfaces that the signal transmission passes through is reduced, which reduces the risk of interconnection failure due to interface abnormalities and improves the reliability of signal transmission.

[0048] For example, the various radio frequency devices in the radio frequency assembly provided in this disclosure embodiment are passive radio frequency devices. For example, this radio frequency assembly can be applied to passive device integration schemes in radio frequency front-ends. For example, the first radio frequency device 01 and the second radio frequency device 02 respectively include at least one of a filter, a balun, a coupler, and a duplexer. Of course, the radio frequency devices in the radio frequency assembly provided in this disclosure embodiment are not limited to the types listed above. In the radio frequency assembly provided in this disclosure embodiment, the radio frequency devices integrated on both sides of the substrate may have the same function or different functions, which needs to be determined according to the design requirements of the radio frequency module.

[0049] Figure 2 is a three-dimensional schematic diagram of a portion of the structure of the RF component shown in Figure 1. For example, the embodiment shown in Figures 1-2 uses a filter as the first RF device and a balun as the second RF device for illustration. The specific integration scheme in actual applications depends on the RF module design and functional requirements. This disclosure does not limit the specific types of the first and second RF devices.

[0050] For example, in the integrated device 10 shown in Figures 1-2, and in the embodiment shown in Figure 1, the integrated device 10 further includes an internal connecting hole IV, which penetrates the substrate 1 from the first surface S1 to the second surface S2. The first radio frequency device 01 includes a second connection structure C2 located in the internal connecting hole IV. The second connection structure C2 electrically connects the upper part 011 of the first radio frequency device 01 and the third conductive element 11b of the lower part 012 of the first radio frequency device 01 via the internal connecting hole IV. That is, the internal connecting hole IV is used to connect the conductive element inside the first radio frequency device.

[0051] For example, as shown in Figure 1, the third conductive element 11b is disconnected from the second radio frequency device 02.

[0052] Referring to Figures 1-2, for example, the first radio frequency device 01 includes a first element 11, which includes a first portion 11a (i.e., a first conductive element 11a) located on a first surface S1, a second portion 11b located on a second surface S2, and a second connection structure C2 located in an internal connecting hole IV.

[0053] For example, the internal connecting via IV includes a first internal connecting via IV1, through which a first portion 11a of the first element 11 of the first radio frequency device 01 is electrically connected to a second portion 11b of the first element 11. For example, the first element 11 is an inductor, and there are multiple first internal connecting vias IV1, thereby forming an inductor coil spanning a first side and a second side of the substrate 1. Of course, in other embodiments, the number of first internal connecting vias may also be one, and the present disclosure does not limit the number of internal connecting vias.

[0054] The portion of the coil located on the first surface S1 of the substrate 1 (first portion 11a) is connected to the portion of the coil located on the second surface S2 of the substrate 1 (second conductive element 13) via the first external connecting hole OV1. The second conductive element 13 is further electrically connected to the second radio frequency device 02 located on the second surface S2 of the substrate 1 via the via V3.

[0055] For example, as shown in Figure 2, the integrated device 10 includes multiple first external communication holes OV1. A portion of the coil located on the first surface S1 of the substrate 1 is connected via one of the first external communication holes OV11 to a portion of the coil located on the second surface S2 of the substrate 1 (second conductive element 13). The second conductive element 13 is further electrically connected to a second radio frequency device 02 located on one side of the second surface S2 of the substrate 1 via a via V3. Figure 2 only shows one example of a first radio frequency device. Other first external communication holes OV1 in Figure 2 can be used to connect conductive elements of other first radio frequency devices integrated on the first surface S1 of the substrate 1 to other second radio frequency devices located on one side of the second surface S2 of the substrate 1. Alternatively, other first external communication holes OV1 in Figure 2 can be used to provide input or output signals to the first radio frequency device, and so on. In summary, other first external communication holes OV1 can also be used to connect conductive elements of radio frequency devices located on both sides of the substrate.

[0056] For example, referring to FIG1, the internal connecting hole IV includes a first internal connecting hole IV1. The second connection structure C2 located in the first internal connecting hole IV is electrically connected via the first internal connecting hole IV1 to the first portion 11a of the first element 11 of the first radio frequency device 01 and the second portion 11b of the first element 11 of the first radio frequency device 01. That is, the upper part 011 includes the first portion 11a of the first element 11, and the second portion 11b of the first element 11 serves as the third conductive element 11b of the lower part 012.

[0057] For example, referring to FIG1, the first radio frequency device 01 includes a second element 12 located on the first surface S1, and the inner connecting hole IV includes a second inner connecting hole IV2. The second connection structure C2 located in the second inner connecting hole IV2 electrically connects the second element 12 of the first radio frequency device 01 and the second part 11b of the first element 11 of the first radio frequency device 01 via the second inner connecting hole IV2.

[0058] For example, the first external connecting hole OV1 is located on the outer side of the internal connecting hole IV, near the edge of the substrate 1. In this way, the stress generated inside the RF device by the internal connecting hole can be dispersed to the edge region of the RF device, avoiding the problem of substrate warping and film peeling caused by stress concentration, which can lead to RF device failure or even damage.

[0059] Of course, in other embodiments, the first external connecting hole OV1 can also be located in the middle of the substrate 1, which can be set according to design requirements.

[0060] For example, the first external connecting hole OV1 is disposed along the edge of the substrate 1. For example, the distance between the geometric center of the first external connecting hole OV1 and the edge of the substrate 1 to which the first external connecting hole OV1 is closest is less than the distance between the first external connecting hole OV1 and the geometric center of any internal connecting hole. By distributing the first external connecting hole OV1 along the edge of the substrate 1, the aforementioned stress dispersion effect can be better achieved, and the middle area of ​​the substrate is reserved, providing sufficient space for the placement of radio frequency devices.

[0061] For example, the first external connecting hole OV1 is located in the apex corner region of the substrate 1 to achieve better stress dispersion and make full use of the corner region of the substrate.

[0062] For example, referring to Figures 1-2, the first radio frequency device 01 further includes a second element 12. The first connection terminal 11a-1 of the first portion 11a of the first element 11 of the first radio frequency device 01 is connected to the first end of the first connection structure C1 near the first surface S1, corresponding to the first external communication hole OV11. The second end of the first connection structure C1 near the second surface S2 is connected to the second radio frequency device 02 via the second conductive element 13. The second element 12 of the first radio frequency device 01 is connected to the second connection terminal 11a-2 of the first portion 11a of the first element 11 of the first radio frequency device 01.

[0063] For example, referring to Figures 1-2, the portion of the second element 12 that connects to the second connecting end 11a-2 of the first portion 11a of the first element 11 and the second connecting end 11a-2 are disposed in different layers, and the two are connected by a fourth connecting structure C4 via a first through hole V1 and a second through hole V2. Of course, in other embodiments, the two can also be disposed in the same layer and directly connected, for example, the two are disposed in the same layer, made of the same material, and constitute an integral structure.

[0064] For example, the second element 12 is a capacitor. This capacitor includes, for example, a first plate M1, a second plate M2, and a dielectric layer INS1. The second plate M2 is connected to a second connection terminal 11a-2 of an inductor via a fourth connection structure C4, through a first via V1 and a second via V2. The first plate M1 is connected to the second portion 11b of the first element 11 of the first RF device 01 via an internal via IV.

[0065] For example, the first radio frequency device 01 also includes a third element 13 located on the second surface S2. The first connection structure C1 is connected to the third element 13 of the first radio frequency device 01 via the first external connecting hole OV1. The third element 13 of the first radio frequency device 01 is connected to the second radio frequency device 02. For example, the third element 13 is a conductive layer, which together with the first element 11 and the second element 12 constitutes a filter.

[0066] In other embodiments, the first radio frequency device may be directly connected to the second radio frequency device via the first external communication hole, that is, the third element mentioned above is removed. Specifically, the design can be made according to the types of the first and second radio frequency devices required.

[0067] For example, as shown in Figure 1, the first connection structure C1 includes a first conductive layer C11 and a columnar second conductive layer C12. The first conductive layer C11 and the columnar second conductive layer C12 together fill the first external connecting hole OV1. The first conductive layer C11 is located between the columnar second conductive layer C12 and the sidewall of the first external connecting hole OV1, and covers the sidewall of the first external connecting hole OV1 and the side of the columnar second conductive layer C12. The design of the first conductive layer C11 is beneficial to ensure that at least the sidewalls inside the first external connecting hole OV1 are completely covered by the first conductive layer C11 during the fabrication of the radio frequency component. It also ensures that at least a portion of the first surface S1 of the substrate 1 outside the top of the first external connecting hole OV1 and the bottom surface of the pre-fabricated blind hole of the first external connecting hole OV1 (for example, when the first conductive layer C11 is formed, the end of the first external connecting hole OV1 near the second surface S2 of the substrate 1 has not yet penetrated the second surface S2 of the substrate 1) are completely covered by the first conductive layer C11, and the first conductive layer C11 does not break. This is beneficial to ensure that the first end and the second end of the subsequently formed columnar second conductive layer C12 and the first conductive layer C11 can be connected to the first radio frequency device 01 and the second radio frequency device 01, respectively.

[0068] For example, the material of the first conductive layer C11 includes at least one of titanium, copper, and thallium; the material of the columnar second conductive layer C12 is copper. Of course, the materials listed above are only preferred, but are not limited to the types listed above, and can also be other metallic materials.

[0069] The second part 11b of the first element 11 and the third element 13 of the first radio frequency device 01 are both made of conductive materials. For example, they are metallic materials, including metals or alloys. Examples include metals such as titanium, copper, thallium, chromium, and aluminum, as well as alloys of these metals. Of course, metallic materials are not limited to the types listed above.

[0070] For example, as shown in Figure 1, the first radio frequency device 01 further includes a third conductive layer C13. The third conductive layer C13 is located on the first surface S1 of the substrate 1, covering the first surface S1 and the first end of the first external connecting hole OV1, and is in contact with the columnar second conductive layer C12 and the first conductive layer C11. The third conductive layer C13 is electrically connected to the first radio frequency device 01 to ensure that the columnar second conductive layer C12 and the first conductive layer C11 are electrically connected to the first radio frequency device 01, and to ensure the reliability of the first radio frequency device 01 being electrically connected to the second radio frequency device 02 through the first external connecting hole OV1 and the first connection structure C1.

[0071] For example, the material of the third conductive layer C13 is the same as the material of the first conductive layer C11.

[0072] Similarly, as shown in Figure 1, for example, the first radio frequency device 01 further includes a fourth conductive layer C14. The fourth conductive layer C14 is located on the second surface S2 of the substrate 1, covering the second surface S2 and the second end of the first external communication hole OV1, and is in contact with the columnar second conductive layer C12 and the first conductive layer C11. The fourth conductive layer C14 is electrically connected to the second radio frequency device 02 to ensure that the columnar second conductive layer C12 and the first conductive layer C11 are electrically connected to the second radio frequency device 02, thereby further ensuring the reliability of the first radio frequency device 01 being electrically connected to the second radio frequency device 02 through the first external communication hole OV1 and the first connection structure C1.

[0073] For example, the material of the fourth conductive layer C14 is the same as the material of the first conductive layer C11.

[0074] For example, the thickness of the third conductive layer C13 is less than the thickness of the functional layer of the first radio frequency device 01, which is, for example, a capacitor plate or a single-layer coil of an inductor.

[0075] For example, in the embodiment shown in Figures 1-2, the first external connecting hole OV1 includes only one through hole penetrating the substrate 1, the first end of the first connection structure C1 is connected to the first radio frequency device 01, and the second end of the first connection structure C1 is connected to the second radio frequency device 02.

[0076] Figure 3 is another structural schematic diagram of the first external connecting hole. The first external connecting hole OV1 is a through hole unit composed of multiple sub-through holes OV10 that are close to each other. The first connection structure C1 includes multiple sub-parts located in the multiple through holes. The first end of each of the multiple sub-parts is connected to the first radio frequency device 01, and the second end of each of the multiple sub-parts is connected to the second radio frequency device 02.

[0077] Figure 4 is a structural schematic diagram of a radio frequency component provided in an embodiment of the present disclosure; Figure 5 is a three-dimensional schematic diagram of a portion of the structure of the radio frequency component shown in Figure 4.

[0078] The embodiment shown in Figures 4-5 differs from the embodiment shown in Figure 1 in the following ways. Referring to Figures 4-5, the integrated device 10 includes: a substrate 1, a first external via OV1, and a first connection structure. The substrate 1 has a first surface S1 and a second surface S2 opposite to each other; a first radio frequency device 01 is located on the first surface S1 of the substrate 1, and a second radio frequency device 02 is located on the second surface S2; the first external via OV1 penetrates the substrate 1 from the first surface S1 to the second surface S2; the substrate 1 serves as the first insulating layer, and the first external via OV1 penetrating the substrate 1 serves as the via located in the first insulating layer; the first connection structure C1 is located in the first external via OV1 and electrically connects the first radio frequency device 01 and the second radio frequency device 02 via the first external via OV1.

[0079] In other words, in the embodiment shown in Figures 4-5, the entire first radio frequency device 01 is located on the first surface S1 of the substrate 1, and the first radio frequency device 01 is directly connected to the second radio frequency device 02 via the first external connecting hole OV1.

[0080] For example, similar to the embodiment shown in FIG1, the first external connecting hole OV1 is disposed along the edge of the substrate 1 or located in the middle region of the substrate 1.

[0081] For example, in Figures 4-5, the first element 11 of the first radio frequency device 01 is an inductor, which has a multilayer coil 01a. In Figure 1, the portion of the inductor located on the first surface S1 of the substrate 1 has a single-layer coil 01a, but it can also have a multilayer coil.

[0082] For example, in Figure 4, the first RF device 01 includes a first element 11 and a second element 12, and the second RF device 02 includes a first element 13 and a second element 12. The integrated device 10 includes a plurality of first external communication holes OV1 and a plurality of first connection structures C1 respectively located in the plurality of first external communication holes OV1. The plurality of first external communication holes OV1 includes a first sub-external communication hole OV11 and a second sub-external communication hole OV12. The plurality of first connection structures C1 includes a first sub-connection structure C101 located in the first sub-external communication hole OV11 and a second sub-connection structure C102 located in the second sub-external communication hole OV12. The first sub-connection structure C101 is electrically connected to the first element 11 of the first RF device 01 and the first element 13 of the second RF device 02 via the first sub-external communication hole OV11, and the second sub-connection structure C102 is electrically connected to the second element 12 of the first RF device 01 and the second element 14 of the second RF device 02 via the second sub-external communication hole OV12. In other words, the integrated device 10 includes a plurality of first external communication holes for connecting a first radio frequency device located on a first surface of the substrate to a plurality of second radio frequency devices located on a second surface of the substrate.

[0083] For example, the first element 11 of the first radio frequency device 01 is a capacitor, and the first plate M1 of the capacitor is electrically connected to the second element 14 of the second radio frequency device 02 via the second external communication hole OV12.

[0084] Other features of the embodiments shown in Figures 4-5 can be the same as those of the embodiments shown in Figure 1. For example, the features and technical effects of each first external connecting hole and the corresponding first connection structure can be referred to the previous description of the embodiments shown in Figure 1, and will not be repeated here.

[0085] For example, the embodiment shown in Figures 4-5 is also illustrated using the first RF device as a filter and the second RF device as a balun. The specific integration scheme in actual applications is subject to the RF module design and functional requirements. This disclosure does not limit the specific types of the first and second RF devices.

[0086] Figure 6 is a perspective view of a partial structure of another radio frequency component. The difference between the embodiment shown in Figure 6 and those in Figures 4-5 is that, in Figure 6, when the first radio frequency device 01 is an inductor, the inductor has a single-layer coil structure. All other features of the embodiment shown in Figure 6 are the same as those of the embodiments shown in Figures 4-5.

[0087] Figure 7 is a schematic diagram of a radio frequency (RF) component according to an embodiment of this disclosure. The embodiment shown in Figure 7 differs from the embodiment shown in Figure 1 in the following ways. Referring to Figure 7, the integrated device 10 further includes: an input or output signal terminal 3, a second external communication port OV2, and a third connection structure C3. The input or output signal terminal 3 is located on the second surface S2 of the substrate 1; the second external communication port OV2 extends from the first surface S1 to the second surface S2 through the substrate 1; the third connection structure C3 is located in the second external communication port OV2, and the third connection structure C3 connects the first RF device 01 and the input signal terminal through the second external communication port OV2, and is configured to provide an input signal to the first RF device 01 via the second external communication port OV2. Alternatively, the third connection structure C3 connects the first RF device 01 and the output signal terminal through the second external communication port OV2, and is configured to output the output signal of the first RF device 01 via the second external communication port OV2. Reference numeral 3 can represent either the input signal terminal or the output signal terminal.

[0088] For example, the position of the second external via OV2 is required to be the same as that of the first external via OV1; it can be located along the edge of the substrate 1 or in the middle region of the substrate 1. For details, please refer to the above description of the position of the first external via OV1 and the corresponding technical effects.

[0089] Correspondingly, the specific structure of the third connecting structure C3 is the same as that of the first connecting structure C1. For details, please refer to the above description of the specific structure of the first connecting structure C1 and its corresponding technical effects.

[0090] The other features of the embodiment shown in Figure 7 are the same as those of the embodiment shown in Figure 1.

[0091] Figure 8 is a schematic diagram of another radio frequency component provided in an embodiment of this disclosure. The embodiment shown in Figure 8 differs from the embodiments shown in Figures 4-5 in the following ways. Referring to Figure 8, substrate 1 includes a first sub-substrate 101 and a second sub-substrate 102 bonded together. The first sub-substrate 101 and the second sub-substrate 102 each include an upper surface and a lower surface opposite to each other. The lower surface of the first sub-substrate 101 and the upper surface of the second sub-substrate 102 are attached to each other so that the first sub-substrate 101 and the second sub-substrate 102 are bonded together. The upper surface of the first sub-substrate 101 serves as the first surface S1 of the substrate 1, and the lower surface of the second sub-substrate 102 serves as the second surface S2 of the substrate 1. Each first external connecting hole OV1 has a first sub-through hole OV101 penetrating through the first sub-substrate 101 and a second sub-through hole OV102 penetrating through the second sub-substrate 102. One end of the first sub-through hole OV101 and one end of the second sub-through hole OV102 are aligned with each other to form a first external connecting hole OV1 penetrating the entire substrate.

[0092] For example, in the embodiment shown in FIG8, substrate 1 serves as the first insulating layer. The direction perpendicular to the surface of the first insulating layer (the surface where the radio frequency device is disposed) is longitudinal D1, i.e., the direction perpendicular to the surface of substrate 1 (the surface where the radio frequency device is disposed) is longitudinal D1. The direction parallel to the surface of the first insulating layer (the surface where the radio frequency device is disposed) is transverse D2, i.e., the direction parallel to the surface of substrate 1 (the surface where the radio frequency device is disposed) is transverse D2. The first sub-via OV101, the second sub-via OV102, and the first external connecting via OV1 each have a cross-section along longitudinal D1. For example, the cross-section of the first external connecting via OV1 is hourglass-shaped. Along longitudinal D1 and from the first surface S1 to the second surface S2, the width of the cross-section of the first sub-via OV101 gradually decreases in transverse D2, and the width of the cross-section of the first sub-via OV101 gradually increases in transverse D2.

[0093] For example, in the embodiment shown in Figure 1, a first external via OV1 has a cross-section along the longitudinal direction D1. Along the longitudinal direction D1 and from the first surface S1 to the second surface S2, the width of the cross-section of the first external via OV1 gradually decreases in the transverse direction D2. For example, the cross-section of the first external via OV1 is trapezoidal, but is not limited to a trapezoidal shape. Of course, for RF components using a single substrate as shown in Figure 1 rather than a substrate formed by two parts joined together, the cross-section of the first external via OV1 can also be hourglass-shaped as shown in Figure 8, which is beneficial to improving the diversity of the fabrication method of the first external via and facilitating fabrication.

[0094] Figure 9 is a schematic diagram of another radio frequency component provided in an embodiment of this disclosure. The embodiment shown in Figure 9 differs from the embodiment shown in Figure 1 in the following ways. Referring to Figure 9, for example, the inner connecting hole IV is multiplexed as the first outer connecting hole OV1, and the third conductive element 11b is multiplexed as the second conductive element. That is, the third conductive element 11b is electrically connected to the second radio frequency device 02 through the via V3 located in the first insulating layer L1 and is also electrically connected to the second radio frequency device 02.

[0095] For example, Figure 9 shows two internal connecting holes IV, namely internal connecting hole IV1 and internal connecting hole IV2, which are only for illustration. Of course, the number of internal connecting holes is not limited; there can be one or more than two, and the design can be customized as needed.

[0096] At least one embodiment of this disclosure also includes an integrated radio frequency module, which includes a plurality of integrated devices 10 provided according to any of the embodiments of this disclosure. The integrated radio frequency module provided by the embodiments of this disclosure can achieve at least the following technical effects.

[0097] First, in the integrated radio frequency module of this disclosure, two devices with different radio frequency functions that need to be interconnected are respectively disposed on both sides of the substrate. The two devices that need to be interconnected are stacked in the vertical direction to form a three-dimensional arrangement. Compared with the case where two radio frequency devices are arranged in a planar manner on the same side of the substrate (i.e., the two radio frequency devices are not stacked in the vertical direction perpendicular to the first surface of the substrate), the total area occupied by multiple radio frequency devices can be significantly reduced. For example, in some radio frequency modules that integrate multiple radio frequency components, the total area occupied by multiple radio frequency devices can be reduced by 50%, thereby improving the integration of radio frequency devices and miniaturizing the size.

[0098] Secondly, the signal transmission distance between the RF devices interconnected through the first external through-hole is basically the same as the thickness of the substrate. It is not necessary to make the wires used to connect the interconnected RF devices wind around or even cross layers in order to avoid signal lines that are all located on the same side of the substrate. This shortens the signal transmission distance between the two interconnected RF devices and reduces signal loss.

[0099] Third, the signal transmission path between the two interconnected RF devices is from the first RF device 01 through the first external connecting hole OV1 directly to the second RF device 02. The interconnection path between the RF devices is shortened, thereby improving the efficiency of signal transmission. In addition, the number of interfaces that the signal transmission passes through is reduced, which reduces the risk of interconnection failure due to interface abnormalities and improves the reliability of signal transmission.

[0100] Figures 10 to 29 are schematic diagrams of a method for manufacturing a radio frequency component according to an embodiment of the present disclosure, for example, for manufacturing the radio frequency component shown in Figure 1.

[0101] 1. Form the first external connecting hole OV1 and the internal connecting via IV. The cross-section of the first external connecting hole OV1 and the internal connecting via IV in the longitudinal direction can be either conical or hourglass-shaped. The subsequent process flow is shown with the first external connecting hole OV1 and the internal connecting via IV being hourglass-shaped as an example. The specific steps are as follows (1) to (4).

[0102] (1) Referring to Figure 10, a pre-formed hole H consisting of a first external connecting hole OV1 and an internal connecting via IV is formed from the first surface S1 of the pre-formed substrate 1a (i.e., the first surface S1 of the final substrate 1). The pre-formed hole H can be fabricated in various ways, such as melting, sandblasting, etc. The relatively better method is laser modification + etching to form a blind hole. The cross-section of the blind hole in the longitudinal direction is conical, and the depth of the blind hole in the longitudinal direction is greater than the thickness of the substrate 1 of the final RF component.

[0103] (2) Referring to Figure 11, a first seed layer 4a is formed for fabricating the first conductive layer C11 inside the pre-formed hole H. The material of the first seed layer 4a is a metallic material, such as at least one of titanium, copper, and thallium, with titanium and copper being the most common, but other metals such as thallium can be used. The thickness of the first seed layer 4a can be adjusted according to requirements. It is necessary to ensure that the bottom surface and sidewalls of the pre-formed hole H are completely covered by the first seed layer 4a, especially to ensure that the first surface S1 of the pre-formed substrate 1a at the top of the pre-formed hole H and the bottom of the via are completely covered by the seed layer without breakage.

[0104] (3) Referring to Figure 12, a second seed layer 4b is formed to create the second conductive layer C12 located within the pre-drilled hole H. For example, by using a metal electroplating growth method, the second seed layer 4b can be completely filled within the pre-drilled hole H. For example, the material of the second conductive layer C12 is a metal, such as copper. Alternatively, conformal electroplating can be performed, that is, a certain thickness of metal is electroplated and grown only along the hole wall and bottom, without completely filling the pre-drilled hole H. Figure 12 shows a complete filling example. For example, the material of the second seed layer 4b filling the pre-drilled hole H can be the same as or different from the material of the first seed layer 4a.

[0105] (4) Referring to FIG13, remove the portions of the first seed layer 4a and the second seed layer 4b located in the pre-formed hole H and on the first surface S1 of the pre-formed substrate 1a. Since the uniformity of the metal electroplated and grown on the first surface S1 of the pre-formed substrate 1a is difficult to guarantee, it is necessary to remove the metal on the first surface S1 of the pre-formed substrate 1a, for example by chemical mechanical polishing (CMP).

[0106] 2. Patterning of the first metal layer of the first RF device 01. A first metal layer is formed on the glass surface. For example, the first metal layer includes the first electrode M1 of the capacitor of the first RF device 01 and the first conductive element 11a of the first RF device 01. The material of the first metal layer can be Cu, Al, or other materials with good conductivity. The thickness of the first metal layer is made according to requirements, for example, between 0.2µm and 10µm. PVD or electroplating processes are selected according to different metal materials and thickness requirements. An adhesion layer can be added between the glass and the metal as required. The adhesion layer can be Ti, Ta, TiN, TaN, or other metals with high adhesion to glass and Ti, metal nitrides, silicon oxides, etc. The thickness is adjusted according to the process capability and can be between 30 and 100nm. If an electroplating process is used, an additive or subtractive method can be adopted. The following process uses the additive method as an example.

[0107] As shown in Figure 1 above, there is an adhesion layer (i.e., the aforementioned third conductive layer C13) between the metal surfaces (columnar second conductive layer C12 and first conductive layer C11) in the first external connecting hole OV1 and the internal connecting via IV and the first metal layer. After using CMP to make the metal surface in the pre-formed hole H flush with the surface of the pre-formed substrate 1a, the first metal layer is then fabricated on the glass surface. On the one hand, this ensures the uniformity of the thickness of the first metal layer. If the metal in the pre-formed hole H and the first metal layer are formed at the same time, the metal on the surface of the pre-formed substrate 1a will be overgrown during the metal filling growth in the pre-formed hole H, which will not ensure the uniformity of the thickness of the first metal layer. On the other hand, with the surface of the pre-formed hole H flat, the fabrication of the first metal layer can make the connection between the first metal layer and the metal in the pre-formed hole H tighter, which helps to improve reliability. Specifically, the steps (5) to (9) are as follows.

[0108] (5) Referring to Figure 14, a third seed layer 4c is formed for fabricating the third conductive layer C13. The material of the third seed layer 4c is, for example, the same as that of the first seed layer 4a. The thickness of the third seed layer 4c can be adjusted as needed.

[0109] (6) Referring to Figure 15, form the first photoresist pattern 4d. Ordinary photosensitive PR photoresist can be used, either positive or negative. Considering the slope angle of the edge of the subsequent electroplated metal pattern and subsequent processes, the closer the slope angle of the photoresist pattern is to a right angle, the better.

[0110] (7) Referring to Figure 16, a first metal layer is formed using the first photoresist pattern 4d as a mask. The first metal layer includes a first electrode M1 and a first conductive element 11a. For example, the first metal layer can be formed by electroplating. For example, the first metal layer can be formed by electroplating Cu metal, which has good conductivity. The thickness of the electroplated first metal layer can be determined according to the requirements, for example, the thickness can be 3um to 10um. Of course, other metals can also be electroplated to form the first metal layer.

[0111] (8) Referring to Figure 17, remove the first photoresist pattern 4d to expose the third seed layer 4c.

[0112] (9) Referring to Figure 18, the third seed layer 4c is etched using the first metal layer as a mask to etch away the part of the third seed layer 4c that is not covered by the pattern of the first metal layer, and to avoid the seed layer below the first metal layer being etched to form a chamfer, so as to avoid affecting the bonding force between the film layers.

[0113] 3. Forming the dielectric layer INS1. Option 1: The dielectric layer INS1 can cover the entire first surface of the prefabricated substrate 1a; Option 2: The dielectric layer INS1 can adopt a block patterning scheme, that is, it only covers at least a part of the first electrode plate M1 and does not cover the surface of the prefabricated substrate 1a exposed by the first metal layer. The structures at the overlap position of the dielectric layer INS1 and the first metal layer are different in these two different schemes. Compared with Option 1, in Option 2, the dielectric layer INS1 does not need to completely cover the edge of the thicker metal of the first metal layer. This avoids the dielectric layer INS1 from breaking at the edge of the first metal layer due to the excessive thickness of the first metal layer and the insufficient thickness of the dielectric layer INS1. This would cause the dielectric layer INS1 to peel off from the break point in the subsequent process, affecting the bonding state between the film layers and reducing the reliability of the device. Therefore, the block patterning scheme of the INS1 layer is preferred. The following process flow is shown with the block patterning scheme. The formation of the dielectric layer INS1 specifically includes the following steps (10) to (14).

[0114] (10) Referring to Figure 19, a fourth seed layer 4e is formed for fabricating the dielectric layer INS1, for example, by chemical vapor deposition (CVD). For example, silicon nitride is used to form the fourth seed layer 4e, or other materials with different dielectric constants, such as tantalum oxide, can be used to form the dielectric layer INS1 between the upper and lower plates of the capacitor. The thickness of the dielectric layer INS1 is designed and determined according to the capacitance requirement, for example, 80 nm to 200 nm.

[0115] (11) Referring to Figure 20, a second photoresist layer 4f is formed. The thickness of the second photoresist layer 4f is sufficient to completely cover the surface of the dielectric layer INS1. The thickness of the second photoresist layer 4f can be between 1µm and 4µm, but is not limited to this.

[0116] (12) Referring to Figure 21, the second photoresist layer 4f is photolithographically ...

[0117] (13) Referring to Figure 22, the fourth seed layer 4e is etched using the second photoresist pattern 4g as a mask to form the pattern of the dielectric layer INS1. For example, the pattern of the dielectric layer INS1 can be formed by dry etching to obtain higher etching accuracy.

[0118] (14) Remove 4g of the second photoresist pattern.

[0119] 4. Referring to Figure 23, a pattern for the second metal layer is formed using a patterning process such as photolithography. The second metal layer includes the second electrode M2 ​​of the capacitor.

[0120] 5. Referring to Figure 24, a second insulating layer 51 is formed, and a first via V1 and a second via V2 are formed in the second insulating layer 51 using photolithography. The first via V1 exposes the second electrode M2, and the second via V2 exposes the first conductive element 11a. For example, the material of the second insulating layer 51 can be a photosensitive PI material, or other photosensitive insulating materials can be selected. Thus, the first via V1 and the second via V2 can be formed by directly performing photolithography on the second insulating material layer before patterning using a mask, simplifying the fabrication process. Of course, the material of the second insulating layer 51 can also be other insulating materials, such as organic or inorganic insulating materials. The thickness of the second insulating layer 51 is determined according to design requirements, for example, the thickness of the second insulating layer 51 is between 3µm and 8µm, but is not limited to this range.

[0121] 6. Referring to Figure 25, an adhesion layer 4f and a fourth connection structure C4 are formed sequentially. The adhesion layer 4f includes portions covering the bottom and side surfaces of the first through-hole V1 and the second through-hole V2, and a portion covering the surface of the second insulating layer 51, so as to be electrically connected to the second electrode plate M2 and the first conductive element 11a through the first through-hole V1 and the second through-hole V2, respectively. The fourth connection structure C4 is electrically connected to the adhesion layer 4f through the first through-hole V1 and the second through-hole V2, thereby being electrically connected to the second electrode plate M2 and the first conductive element 11a.

[0122] 7. Referring to Figure 26, a third insulating layer 52 is formed, which covers the fourth connecting structure C4 and the second insulating layer 51. For example, the material of the third insulating layer 52 can be a photosensitive PI material, or other photosensitive insulating materials can be selected, and the film formed from this material is cured. Of course, the material of the third insulating layer 52 can also be other insulating materials, such as organic or inorganic insulating materials. The thickness of the third insulating layer 52 is determined according to design requirements, for example, the thickness of the third insulating layer 52 is between 3µm and 8µm, but is not limited to this range.

[0123] 8. Referring to Figure 27, the pre-substrate 1a is thinned from the back side opposite to the first surface S1, reducing its thickness to the required level and exposing the metal within the first external connecting hole OV1 and the internal connecting via IV. This forms the first external connecting hole OV1, the internal connecting via IV, and the substrate 1, ensuring that both the final first external connecting hole OV1 and the internal connecting via IV penetrate the substrate 1. CMP treatment is then performed on the back side of the substrate 1 and the metal within the holes as needed to improve the metal interface condition.

[0124] 9. Referring to FIG28, the lower part of the first radio frequency device 01 is formed on the second surface S2 of the substrate 1 using a patterning process, for example including forming a third conductive element 11b and a second conductive element 13.

[0125] 10. Referring to FIG29, using a process similar to that used to form the various film layers of the first RF device 01 on the first surface S1 of the substrate 1, the various film layers of the second RF device are formed on the second surface S2 of the substrate 1. The second conductive element 13 is further electrically connected to the second RF device 02 located on the second surface S2 of the substrate 1 through a via V3. Thus, the integrated device 10 shown in FIG29 is formed.

[0126] Referring to Figure 29, the fabrication method also includes graphic representation of the package block. The package block bump can be made of solder balls or copper pillars. The two different packaging forms use different processes. Solder balls can be made by printing, ball placement, etc., while copper pillars are made by electroplating. Finally, reflow is performed, and the morphology of the film layer after completion is shown in Figure 29.

[0127] The integrated device 10 shown in Figures 4, 7, and 9 can be fabricated using a method similar to that used to form the integrated device 10 shown in Figure 1, where each film layer is formed sequentially. Specific steps will not be repeated here. For the integrated devices 10 formed in the various embodiments shown in Figures 4, 7, and 9, please refer to the descriptions in the previous embodiments for the specific connection relationships between the film layers; these will not be repeated here.

[0128] Figures 30 to 32 are schematic diagrams illustrating the fabrication method of the integrated device shown in Figure 8.

[0129] Referring to FIG. 30, the first sub-substrate 101 includes an upper surface 101a and a lower surface 101b opposite to each other. The specific method for forming the various film layers of the first radio frequency device 01 on the upper surface 101a of the first sub-substrate 101 is similar to the method for forming the various film layers shown in FIG. 1, and will not be repeated here. Furthermore, the method for forming the first sub-via 101 penetrating the first sub-substrate 101 is similar to the method for forming a through-hole penetrating the substrate 1 described above.

[0130] Referring to FIG. 31, the second sub-substrate 102 includes an upper surface 102a and a lower surface 102b opposite to each other. The specific method for forming the various film layers of the second radio frequency device 02 on the lower surface 102b of the second sub-substrate 102 is similar to the method for forming the various film layers shown in FIG. 1, and will not be repeated here. Furthermore, the method for forming the second sub-via 102 penetrating the second sub-substrate 102 is similar to the method for forming the via penetrating the substrate 1 described above.

[0131] Referring to Figure 32, the lower surface 101b of the first sub-substrate 101 and the upper surface 102a of the second sub-substrate 102 are bonded together to bond the first sub-substrate 101 and the second sub-substrate 102 together. The upper surface of the first sub-substrate 101 serves as the first surface S1 of the substrate 1, and the lower surface 102b of the second sub-substrate 102 serves as the second surface S2 of the substrate 1. Each first external connecting hole OV1 has a first sub-through hole OV101 penetrating the first sub-substrate 101 and a second sub-through hole OV102 penetrating the second sub-substrate 102. One end of the first sub-through hole OV101 and one end of the second sub-through hole OV102 are aligned with each other to form a first external connecting hole OV1 penetrating the entire substrate.

[0132] For example, the metal within the first sub-via OV101 and the metal within the second sub-via OV102 are connected by metal bonding to establish a signal channel between the two devices. Alternatively, Cu-Cu bonding can be used to connect the Cu metal within the first sub-via OV101 and the Cu metal within the second sub-via OV102. The advantage of this embodiment over previous fabrication methods is that it eliminates the need for redesigning the RF device integration requirements each time the design changes; instead, it allows for flexible combination using the two sub-substrates to meet specific needs.

[0133] The following points also need to be explained:

[0134] (1) The accompanying drawings of the embodiments of this disclosure only involve the structures involved in the embodiments of this disclosure. Other structures can be referred to the general design.

[0135] (2) For clarity, the thickness of layers or regions in the drawings used to describe embodiments of the present disclosure is enlarged or reduced, i.e., these drawings are not drawn to actual scale.

[0136] (3) Where there is no conflict, the embodiments of this disclosure and the features in the embodiments can be combined with each other to obtain new embodiments.

[0137] The above description is merely an exemplary embodiment of the present invention and is not intended to limit the scope of protection of the present invention, which is determined by the appended claims.

Claims

1. An integrated device, comprising: First insulating layer; A first radio frequency device is located on a first side of the first insulating layer; as well as A second radio frequency device is located on a second side of the first insulating layer, wherein the second side of the first insulating layer is opposite to the first side of the first insulating layer, and... The first radio frequency device and the second radio frequency device are electrically connected through a via located in the first insulating layer.

2. The integrated device according to claim 1, comprising: A substrate is located on a first side of the first insulating layer and has a first surface away from the first insulating layer and a second surface close to the first insulating layer, wherein the first surface and the second surface are opposite to each other; the first radio frequency device includes an upper portion located on the first surface of the substrate and a lower portion located on the second surface of the substrate, the first insulating layer covering the second surface of the substrate and the lower portion of the first radio frequency device; the second radio frequency device is located on the side of the first insulating layer away from the substrate; A first external connecting hole extends through the substrate from the first surface to the second surface; and A first connection structure is located in the first external connecting hole and electrically connects the upper first conductive element of the first radio frequency device and the lower second conductive element of the first radio frequency device via the first external connecting hole, wherein the second conductive element and the second radio frequency device are electrically connected through the via located in the first insulating layer.

3. The integrated device according to claim 2, wherein, The integrated device further includes an internal connecting hole that extends through the substrate from the first surface to the second surface; The first radio frequency device includes a second connection structure located in the inner through hole, the second connection structure electrically connecting the upper part of the first radio frequency device to a third conductive element at the lower part of the first radio frequency device via the inner through hole.

4. The integrated device according to claim 3, wherein, The third conductive element is disconnected from the second radio frequency device; or... The inner connecting hole is reused as the first outer connecting hole, and the third conductive element is reused as the second conductive element and is electrically connected to the second radio frequency device.

5. The integrated device according to claim 3 or 4, wherein, The first radio frequency device includes a first element, and the first element of the first radio frequency device includes a first portion located on the first surface and a second portion located on the second surface; The upper part includes the first portion, and the second portion serves as the third conductive element of the lower part; The internal connecting hole includes a first internal connecting hole, and the second connection structure located in the first internal connecting hole electrically connects the first part of the first element of the first radio frequency device to the second part of the first element of the first radio frequency device via the first internal connecting hole.

6. The integrated device according to claim 5, wherein, The first radio frequency device includes a second element located on the first surface. The internal communication hole includes a second internal communication hole, and the second connection structure located in the second internal communication hole electrically connects the second element of the first radio frequency device to the second part of the first element of the first radio frequency device via the second internal communication hole.

7. The integrated device according to claim 6, wherein, The first connection terminal of the first part of the first element of the first radio frequency device is connected to the first end of the first connection structure near the first surface, and the second end of the first connection structure near the second surface is connected to the second radio frequency device via the second conductive element. The second element of the first radio frequency device is connected to the second connection terminal of the first part of the first element of the first radio frequency device.

8. The integrated device according to any one of claims 3-7, wherein, The first external connecting hole is located on the outer side of the inner connecting hole near the edge of the substrate.

9. The integrated device according to claim 8, wherein, The first external connecting hole is provided along the edge of the substrate.

10. The integrated device according to claim 9, wherein, The first external connecting hole is located in the apex corner region of the substrate.

11. The integrated device according to claim 1, comprising: A substrate having a first surface and a second surface opposite to each other, wherein the substrate serves as the first insulating layer, the first radio frequency device is located on the first surface of the substrate, and the second radio frequency device is located on the second surface; A first external connecting hole extends through the substrate from the first surface to the second surface; and A first connection structure is located in the first external communication hole and electrically connects the first radio frequency device and the second radio frequency device via the first external communication hole.

12. The integrated device according to claim 2 or 11, wherein, The first external connecting hole is disposed along the edge of the substrate or located in the middle region of the substrate.

13. The integrated device according to any one of claims 1-12, further comprising: The input or output signal terminal is located on the second surface of the substrate; A second external connecting hole extends through the substrate from the first surface to the second surface; as well as The third connecting structure is located in the second external connecting hole, wherein... The third connection structure connects the first RF device and the input signal terminal through the second external communication hole, and is configured to provide an input signal to the first RF device via the second external communication hole, or... The third connection structure connects the first radio frequency device and the output signal terminal through the second external connection hole, and is configured to output the output signal of the first radio frequency device through the second external connection hole.

14. The integrated device according to claim 13, wherein, The second external connecting hole is disposed along the edge of the substrate or located in the middle region of the substrate.

15. The integrated device according to claim 2 or 11, wherein, The first radio frequency device includes a first element and a second element, and the second radio frequency device includes a first element and a second element; The integrated device includes a plurality of first external connecting holes and a plurality of first connection structures respectively located in the plurality of first external connecting holes. The plurality of first external connecting holes include first sub-external connecting holes and second sub-external connecting holes. The plurality of first connection structures include first sub-connection structures located in the first sub-external connecting holes and second sub-connection structures located in the second sub-external connecting holes. The first sub-connection structure electrically connects the first element of the first radio frequency device and the first element of the second radio frequency device via the first sub-external communication hole, and the second sub-connection structure electrically connects the second element of the first radio frequency device and the second element of the second radio frequency device via the second sub-external communication hole.

16. The integrated device according to any one of claims 2-11, wherein, The substrate includes a first sub-substrate and a second sub-substrate bonded together. The first sub-substrate and the second sub-substrate are distributed with upper and lower surfaces opposite each other. The lower surface of the first sub-substrate and the upper surface of the second sub-substrate are attached to each other so that the first sub-substrate and the second sub-substrate are bonded together. The upper surface of the first sub-substrate serves as the first surface of the substrate, and the lower surface of the second sub-substrate serves as the second surface of the substrate. The first external connecting hole has a first sub-through hole penetrating the first sub-substrate and a second sub-through hole penetrating the second sub-substrate, with one end of the first sub-through hole and one end of the second sub-through hole mating with each other to form the first external connecting hole penetrating the entire substrate.

17. The integrated device according to any one of claims 2-11, wherein, The first external through-hole is a through-hole unit composed of multiple closely spaced sub-through-holes. The first connection structure includes multiple sub-sections located within the multiple sub-through-holes. A first end of each of the multiple sub-sections is connected to the first radio frequency device, and a second end of each of the multiple sub-sections is connected to the second radio frequency device; or... The first external connecting hole includes only one through hole penetrating the substrate, the first end of the first connection structure is connected to the first radio frequency device, and the second end of the first connection structure is connected to the second radio frequency device.

18. The integrated device according to any one of claims 2-11, wherein, The first connection structure includes a first conductive layer and a columnar second conductive layer. The first conductive layer and the columnar second conductive layer together fill the first external connecting hole. The first conductive layer is located between the columnar second conductive layer and the sidewall of the first external connecting hole, and covers the sidewall of the first external connecting hole and the side of the columnar second conductive layer.

19. The integrated device according to claim 18, wherein, The first radio frequency device further includes a connection conductive layer, which is located on at least one of the first surface and the second surface of the substrate, covers at least one of the first surface and the second surface and the first external connecting hole, and is in contact with the second conductive layer and the first conductive layer; The material of the connecting conductive layer is the same as the material of the first conductive layer.

20. An integrated module comprising an integrated plurality of integrated devices according to any one of claims 1-19.

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