Half-bridge power module, full-bridge power module and electrical device

Abstract

The present application provides a half-bridge power module (100), a full-bridge power module (300) and an electrical device (400). The half-bridge power module (100) comprises: a substrate (1); and a circuit unit (2) provided on the substrate (1), wherein the circuit unit (2) comprises an upper bridge (21) and a lower bridge (22), any one of the upper bridge (21) and the lower bridge (22) comprises wide-bandgap power chips (23) and silicon-based power chips (24), and, in the array of the wide-bandgap power chips (23) and the silicon-based power chips (24), any two adjacent power elements are power elements having different bases.

Description

Half-bridge power modules, full-bridge power modules and electrical equipment

[0001] This application claims priority to Chinese Patent Application No. 202411208047.7, filed on August 29, 2024, entitled "Half-bridge power module, full-bridge power module and electrical equipment", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of semiconductor technology, and in particular to a half-bridge power module, a full-bridge power module, and an electrical device. Background Technology

[0003] With the development of new energy vehicle technology, more and more new energy vehicle main drive inverters are adopting power semiconductor modules.

[0004] Currently, the power semiconductor modules on the market are mainly Si IGBT modules and SiC MOSFET modules. The main drawback of Si IGBT modules is their high switching losses, while the main drawback of SiC MOSFET modules is their high cost due to limitations in the silicon carbide substrate manufacturing process, making it difficult to meet the explosive growth in demand from the new energy vehicle market. The technology of combining Si IGBTs and SiC MOSFETs in parallel is still in its early stages, and there is a lack of related technologies, with little consideration given to the heat dissipation issues of power modules in parallel Si IGBT and SiC MOSFET configurations. Summary of the Invention

[0005] In view of the above problems, this application provides a half-bridge power module and its manufacturing method, a full-bridge power module and electrical equipment, which integrates a wide bandgap power chip and a silicon-based power chip, and can balance switching losses and product costs, optimize manufacturing process and improve production efficiency.

[0006] In view of the above problems, this application provides a half-bridge power module, a full-bridge power module, and an electrical device, which can better expand the power level, while taking into account switching losses and cost issues, and can improve heat dissipation capabilities.

[0007] This application provides a half-bridge power module, comprising: a substrate; and a circuit unit disposed on the substrate. The circuit unit includes an upper bridge and a lower bridge, and either the upper bridge or the lower bridge includes a wide bandgap power chip and a silicon-based power chip. In the arrangement of the wide bandgap power chip and the silicon-based power chip, any two adjacent power elements belong to power elements of different substrates.

[0008] In some embodiments, in the arrangement of wide bandgap power chips and silicon-based power chips, any two adjacent power elements belong to power elements on different substrates.

[0009] In some embodiments, either the upper bridge or the lower bridge may further include a diode, and in the arrangement of the wide bandgap power chip, the silicon-based power chip and the diode, any two adjacent power elements belong to different types of power elements.

[0010] In some embodiments, the power elements of the lower bridge are electrically connected to the power elements of the same type in the upper bridge to form a half-bridge circuit, and the various power elements in the upper bridge are connected in parallel with each other.

[0011] In some embodiments, a conductive metal layer is provided on the substrate, the conductive metal layer including a DC positive region, an AC region and a DC negative region; the upper bridge is disposed in the DC positive region, and a plurality of power elements of the upper bridge are electrically connected to the AC region; the lower bridge is disposed in the AC region, and a plurality of power elements of the lower bridge are electrically connected to the DC negative region.

[0012] In some embodiments, at least a portion of the structure of each of the DC positive region, the AC region, and the DC negative region extends along a second direction and is arranged along a first direction, the first direction being perpendicular to the second direction.

[0013] In some embodiments, the plurality of power elements in the upper bridge are arranged in at least one row.

[0014] In some embodiments, the power elements in the upper bridge are arranged in multiple rows.

[0015] In some embodiments, when the plurality of power elements in the upper bridge are arranged in multiple rows, the multiple rows are arranged along the first direction.

[0016] In some embodiments, the plurality of power elements in the lower bridge are arranged in at least one row.

[0017] In some embodiments, the power elements in the lower bridge are arranged in multiple rows.

[0018] In some embodiments, when the plurality of power elements in the lower bridge are arranged in multiple rows, the multiple rows are arranged along the first direction.

[0019] In some embodiments, each row includes a plurality of the power elements arranged along the second direction.

[0020] In some embodiments, power elements of the same type are arranged in the same row.

[0021] In some embodiments, the power components in the upper bridge and the lower bridge are arranged in the same way.

[0022] In some embodiments, the power components in the upper bridge and the lower bridge are arranged differently.

[0023] In some embodiments, the two power elements of the upper bridge and the lower bridge that are opposite each other along the first direction are of different types.

[0024] In some embodiments, the two power elements of the upper bridge and the lower bridge that are opposite each other along the first direction are of the same type.

[0025] In some embodiments, the half-bridge power module further includes a DC positive terminal, which is located within the DC positive region and is led out from a direction perpendicular to the substrate, or from a side of the DC positive region.

[0026] In some embodiments, the half-bridge power module further includes a DC negative terminal, which is located within the DC negative region and is led out from a direction perpendicular to the substrate, or from a side of the DC negative region.

[0027] In some embodiments, the half-bridge power module further includes an AC terminal disposed within the AC region and extending out from a direction perpendicular to the substrate, or from a side portion of the AC region.

[0028] In some embodiments, the DC positive terminal and the DC negative terminal are located on the same side of the substrate along the first direction, and the AC terminal is located on the side of the substrate opposite to the DC positive terminal along the first direction.

[0029] In some embodiments, when the power elements in the upper bridge and the lower bridge are divided into multiple rows arranged along the first direction, the row containing the wide bandgap power chip is closer to the DC positive terminal and the DC negative terminal along the first direction.

[0030] In some embodiments, the outer contour of the conductive metal layer includes a first side and a second side opposite to each other along the first direction, and a third side and a fourth side opposite to each other along the second direction; the DC positive electrode region includes a first transmission region extending along the second direction, and the upper bridge is disposed in the first transmission region.

[0031] In some embodiments, the DC negative terminal region is disposed along the second side and is opposite to and spaced from the first transmission region along the first direction, and the DC negative terminal is led out from the second side.

[0032] In some embodiments, the AC region includes a first AC region located between the first transmission region and the DC negative region, and the lower bridge is disposed in the first AC region.

[0033] In some embodiments, the DC positive region further includes a second transmission region and a third transmission region, the second transmission region being disposed along the third side and the third transmission region being disposed along the fourth side, both the second transmission region and the third transmission region extending to the second side along the first direction, the first AC region and the DC negative region being arranged along the first direction and located between the second transmission region and the third transmission region, and the DC positive terminal being disposed on at least one of the second transmission region and the third transmission region.

[0034] In some embodiments, the DC positive terminal is led out from the second side of the conductive metal layer.

[0035] In some embodiments, each of the second transmission region and the third transmission region has an extension extending along the second side at one end away from the first transmission region along the first direction. There are two DC positive terminals, which are respectively disposed on the extensions of the second transmission region and the third transmission region, and the DC negative terminal is disposed between the two DC positive terminals.

[0036] In some embodiments, the communication area further includes a second communication area, which is located on the side of the first transmission area facing the first side. The second communication area is disposed along the first side and is connected to the first communication area via a connecting line. The communication terminal is disposed in the second communication area.

[0037] In some embodiments, the second AC area further includes an AC main area and a connection area. The AC main area is disposed along the first side. There are two connection areas, which are respectively located on both sides of the first transmission area along the second direction. The first end of each connection area is connected to the AC main area, and the second end extends toward the direction close to the first AC area. The second end is connected to the first AC area through a connection line.

[0038] In some embodiments, the wide bandgap power chip includes a SiC MOSFET, and the silicon-based power chip includes a Si IGBT.

[0039] In some embodiments, a conductive metal layer is provided on the substrate, and the conductive metal layer further includes: a first driving layer group, including: a first SiC gate driving layer, a first IGBT gate driving layer, a first SiC source driving layer and a first IGBT emitter driving layer, the gate of the SiC MOSFET of the upper bridge is connected to the first SiC gate driving layer through a connection line, the source of the SiC MOSFET of the upper bridge is connected to the first SiC source driving layer through a connection line, the gate of the Si IGBT of the upper bridge is connected to the first IGBT gate driving layer through a connection line, and the emitter of the Si IGBT of the upper bridge is connected to the first IGBT emitter driving layer through a connection line.

[0040] In some embodiments, the conductive metal layer further includes a second driving layer group, comprising: a second SiC gate driving layer, a second IGBT gate driving layer, a second SiC source driving layer, and a second IGBT emitter driving layer. The gate of the SiC MOSFET of the lower bridge is connected to the second SiC gate driving layer via a connection line. The source of the SiC MOSFET of the lower bridge is connected to the second SiC source driving layer via a connection line. The gate of the Si IGBT of the lower bridge is connected to the second IGBT gate driving layer via a connection line. The emitter of the Si IGBT of the lower bridge is connected to the second IGBT emitter driving layer via a connection line.

[0041] In some embodiments, the first SiC source driving layer and the first IGBT emitter driving layer are connected to form a first common copper layer.

[0042] In some embodiments, the second SiC source driving layer and the second IGBT emitter driving layer are connected to form a second common copper layer.

[0043] In some embodiments, there are multiple first driving layer groups, each of which is used to connect at least one SiC MOSFET and at least one Si IGBT in the upper bridge.

[0044] In some embodiments, there are multiple second driving layer groups, each second driving layer group being used to connect at least one of the SiC MOSFETs and one of the Si IGBTs in the lower bridge.

[0045] The second aspect of this application also provides a full-bridge power module, comprising: the half-bridge power module described in the first aspect above, wherein there are three half-bridge power modules, the three half-bridge power modules are connected to the same heat sink base plate and constitute a three-phase full-bridge power module, and each half-bridge power module corresponds to one of the single phases.

[0046] A third aspect of this application also provides an electrical device, including a power module, wherein the power module includes the half-bridge power module described in the first aspect of this application, and / or the full-bridge power module described in the second aspect of this application.

[0047] The half-bridge power module of this application integrates parallel wide-bandgap power chips, silicon-based power chips, and diodes, forming a hybrid single-phase half-bridge power module of wide-bandgap and silicon-based power chips. This allows for better expansion of current specifications and power levels while addressing switching losses and cost issues. Furthermore, by constructing the circuit unit such that at least some wide-bandgap power chips, silicon-based power chips, and diodes are not adjacent to power components of the same type, the power components operating simultaneously can be distributed as widely as possible, avoiding thermal coupling between power components of the same type and thus improving heat dissipation. Attached Figure Description

[0048] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0049] Figure 1 is a schematic diagram of the internal layout of some embodiments of the half-bridge power module of this application;

[0050] Figure 2 is a schematic diagram of the internal bonding of the half-bridge power module shown in Figure 1;

[0051] Figure 3 is a schematic diagram of the internal bonding of some other embodiments of the half-bridge power module of this application;

[0052] Figure 4 is a schematic diagram of the internal bonding of some other embodiments of the half-bridge power module of this application;

[0053] Figure 5 is a schematic diagram of the structure of a wide bandgap power chip according to an embodiment of this application;

[0054] Figure 6 is a schematic diagram of the structure of a silicon-based power chip according to an embodiment of this application;

[0055] Figure 7 is a schematic diagram of the diode structure according to an embodiment of this application;

[0056] Figure 8 is a schematic diagram of the arrangement of power components in the upper or lower bridge of some embodiments of this application;

[0057] Figure 9 is a schematic diagram of the arrangement of power components in the upper or lower bridge of some other embodiments of this application;

[0058] Figure 10 is a schematic diagram of the arrangement of power components in the upper or lower bridge of some embodiments of this application;

[0059] Figure 11 is a schematic diagram of the arrangement of power components in the upper or lower bridge in some embodiments of this application;

[0060] Figure 12 is a schematic diagram of the power element arrangement when the upper bridge and lower bridge are arranged adjacently in an embodiment of this application;

[0061] Figure 13 is a schematic diagram of the power element arrangement when the upper and lower bridges are spaced apart according to an embodiment of this application;

[0062] Figure 14 is a schematic diagram of the driver layer group according to an embodiment of this application;

[0063] Figure 15 is a schematic diagram of the current path when the power module is turned on;

[0064] Figure 16 is a schematic diagram of the current path of the power module during freewheeling;

[0065] Figure 17 is a schematic diagram of the structure of a full-bridge power module according to some embodiments of this application;

[0066] Figure 18 is a schematic diagram of electrical equipment according to some embodiments of this application;

[0067] Figure 19 is a schematic diagram of an electrical device according to some other embodiments of this application.

[0068] Explanation of reference numerals in the attached figures: 100 - Half-bridge power module; 1 - Substrate; 10 - Ceramic layer; 11 - Conductive metal layer; 110a - First side; 110b - Second side; 110c - Third side; 110d - Fourth side; 111 - DC positive region; 1111 - First transmission region; 1112 - Second transmission region; 1113 - Third transmission region; 112 - AC region; 1121 - First AC region; 1122 - Second AC region; 1123 - AC main region; 1124 - Connection region; 113 - DC negative region; 114 - First driving layer group; 1141 - First SiC gate driving layer; 1142 - First IGBT gate driving layer; 1143 - First SiC source driving layer; 1144 - First IGBT emitter driving layer; 1145 - First common copper layer; 115-Second driving layer group; 1151-Second SiC gate driving layer; 1152-Second IGBT gate driving layer; 1153-Second SiC source driving layer; 1154-Second IGBT emitter driving layer; 1155-Second common copper layer; 116-Drive terminal; 117-DC positive terminal; 118-DC negative terminal; 119-AC terminal; 2-Circuit unit; 21-Upper bridge; 22-Lower bridge; 23-Wide bandgap power chip; 231-Source; 232-Gate; 233-Drain; 24-Silicon-based power chip; 241-Emitter; 242-Gate; 243-Collector; 25-Diode; 251-Anode; 252-Cathode; 26-Connecting wire; 200-Heat sink; 300-Full bridge power module; 400-Electrical equipment. Detailed Implementation

[0069] To make the above-mentioned objectives, features, and advantages of the embodiments of this application more apparent and understandable, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0070] With the development of new energy vehicle technology, more and more new energy vehicle main drive inverters are adopting power semiconductor modules. Currently, the power semiconductor modules on the market are mainly Si IGBT modules and SiC MOSFET modules. The main disadvantage of Si IGBT modules is their high switching losses, while the main disadvantage of SiC MOSFET modules is their high cost due to limitations in the manufacturing process of silicon carbide substrates, making it difficult to meet the explosive growth in demand from the new energy vehicle market. The technology of combining Si IGBTs and SiC MOSFETs in parallel is still in its early stages, and related technologies lack consideration for the heat dissipation problem of power modules in the case of parallel connection of Si IGBTs and SiC MOSFETs.

[0071] In view of this, this application provides a half-bridge power module that integrates parallel wide-bandgap power chips and silicon-based power chips, which can better expand current specifications and power levels while taking into account switching losses and cost issues. Furthermore, by constructing the circuit unit such that at least some of the wide-bandgap power chips, silicon-based power chips, and diodes are not adjacent to power components of the same type, the power components operating simultaneously can be distributed as widely as possible, avoiding thermal coupling between power components of the same type, thereby improving heat dissipation.

[0072] The half-bridge power module 100 of the first aspect embodiment of this application is described below with reference to Figures 1-17.

[0073] Referring to Figures 1-4, the half-bridge power module 100 of this embodiment includes: a substrate 1 and a circuit unit 2.

[0074] The substrate 1 can be one of the following: thick film printed ceramic substrate (TPC), direct bonded copper ceramic substrate (DBC), active metal welded ceramic substrate (AMB), direct electroplated copper ceramic substrate (DPC), or other types of substrate.

[0075] The substrate 1 may include a first surface and a second surface opposite to each other. The first surface is provided with a conductive metal layer 11. For example, the substrate 1 may include a ceramic layer 10 and copper layers located on both sides of the ceramic layer 10. The ceramic layer 10 may be at least one of alumina, silicon nitride, and aluminum nitride. One of the copper layers may serve as the conductive metal layer 11. The conductive metal layer 11 may be divided into multiple conductive areas according to the circuit layout requirements. Each conductive area may be used to set up a power chip and to set up a connection circuit for connecting different power chips (this connection circuit is not shown in the figure and may be reasonably set according to the arrangement of each power chip, and will not be described in detail below). The other copper layer may serve as a heat dissipation surface of the substrate 1.

[0076] The circuit unit 2 can be disposed on the conductive metal layer 11 of the substrate 1. The circuit unit 2 includes an upper bridge 21 and a lower bridge 22. The upper bridge 21 is disposed in the DC positive region 111, and the lower bridge 22 is disposed in the AC region 112. Both the upper bridge 21 and the lower bridge 22 include various power components, including a wide bandgap power chip 23, a silicon-based power chip 24, and a diode 25. Among them, there are multiple wide bandgap power chips 23, and at least one silicon-based power chip 24 and diode 25.

[0077] Wide bandgap semiconductor materials can include SiC, GaN, etc., that is, wide bandgap power chip 23 is a SiC device or a GaN device. The SiC device can be a SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

[0078] The silicon-based power chip 24 is a Si-based fully controllable power chip, such as a Si IGBT (Insulated Gate Bipolar Transistor) or a Si MOSFET. In other words, the half-bridge power module 100 in this embodiment is a hybrid half-bridge power module 100 that integrates wide-bandgap semiconductor devices and silicon semiconductor devices.

[0079] Diode 25 can be made of the same material as the wide-bandgap power chip 23, i.e., diode 25 is a wide-bandgap semiconductor diode, such as a SiC SBD (Schottky diode). Diode 25 is connected in parallel with the wide-bandgap power chip 23. Diode 25 can protect the SiC MOSFE from damage caused by excessive reverse current. In addition, SiC SBDs have lower reverse recovery losses, which can greatly reduce power loss and improve conversion efficiency, thereby improving the performance of the half-bridge power module 100. Diode 25 in the upper bridge 21 can be connected to the AC region 112 via connecting wire 26, and diode 25 in the lower bridge 22 can be connected to the DC negative region 113 via connecting wire 26. Connecting wire 26 can be a gold wire, silver wire, copper wire, or other conductive metal wire.

[0080] Alternatively, diode 25 can also be a silicon-based diode, such as a fast recovery diode. Diode 25 can be connected in reverse parallel with silicon-based power chip 24. Since silicon-based power chip 24, such as a Si IGBT, lacks reverse conduction capability, excessive reverse current may damage the Si IGBT. Therefore, by connecting diode 25 in reverse parallel with silicon-based power chip 24, the overall reverse current capability of the module can be enhanced, which is beneficial to improving the overall efficiency and reliability of half-bridge power module 100.

[0081] Optionally, diode 25 is arranged in parallel with both SiC MOSFE and Si IGBT to provide protection for SiC MOSFE and Si IGBT respectively when SiC MOSFE and Si IGBT bear the on-current.

[0082] Understandably, the power components of the same type in the upper bridge 21 and the lower bridge 22 can be matched one-to-one, and the corresponding two power components can form a half-bridge circuit. Furthermore, since multiple half-bridge circuits are connected in parallel, a half-bridge circuit with a current amplification factor of N times (the number of half-bridge circuits is N) can be formed, which is beneficial to improving the power level of the half-bridge power module 100. For example, the wide-bandgap power chip 23 in the upper bridge 21 and the wide-bandgap power chip 23 in the lower bridge 22 are matched one-to-one and form a half-bridge circuit; the silicon-based power chip 24 in the upper bridge 21 and the silicon-based power chip 24 in the lower bridge 22 are matched one-to-one and form a half-bridge circuit; and the diode 25 in the upper bridge 21 and the diode 25 in the lower bridge 22 are matched one-to-one and form a half-bridge circuit.

[0083] Referring to Figures 15 and 16, Figure 15 shows the equivalent circuit of a typical hybrid power module composed of SiC MOSFETs and Si IGBTs, and the current paths during conduction and freewheeling. As shown in Figure 15, during the operation of this power module, the current flows through the SiC MOSFET and Si IGBT during forward conduction, at which time the SiC MOSFET and Si IGBT bear the conduction losses, resulting in an increase in temperature. As shown in Figure 16, during reverse freewheeling, the current flows through the SiC MOSFET and diode 25, at which time the SiC MOSFET and diode 25 chips bear the conduction losses, resulting in an increase in temperature. Since the SiC MOSFET bears both conduction and switching losses under different operating conditions, it experiences the greatest heat dissipation pressure. The Si IGBT chip and diode 25 chip share the losses in a time-sharing manner; the IGBT chip experiences high heat dissipation pressure during inverter operation, and the diode 25 experiences high heat dissipation pressure during rectification operation.

[0084] Therefore, referring to Figures 8-11, in order to improve the overall heat dissipation capacity of the half-bridge power module 100 and enhance the module's output performance, in this embodiment, the circuit unit 2 is constructed such that at least some of the wide-bandgap power chips 23, silicon-based power chips 24, and diodes 25 are not adjacent to power components of the same type as themselves. For example, the wide-bandgap power chips 23, silicon-based power chips 24, and diodes 25 can be arranged in an alternating manner; or, no other type of power component can be placed between any two wide-bandgap power chips 23, but they can be separated by a distance corresponding to the size of at least one power component; no other type of power component can be placed between any two silicon-based power chips 24, but they can be separated by a distance corresponding to the size of at least one power component; and no other type of power component can be placed between any two diodes 25, but they can be separated by a distance corresponding to the size of at least one power component. In this way, the power components that generate heat simultaneously can be distributed as much as possible, avoiding thermal coupling between power components of the same type, thereby improving the heat dissipation capacity.

[0085] As an optional embodiment, in the arrangement of wide-bandgap power chips 23 and silicon-based power chips 24, any two adjacent power elements belong to power elements with different substrates. For example, when there are only wide-bandgap power chips 23 and silicon-based power chips 24, and no diode 25, the silicon-based power chips can be arranged without adjacency, and the power chips with wide-bandgap substrates can be arranged without adjacency, avoiding thermal coupling between power elements of the same substrate type, thereby improving heat dissipation.

[0086] The half-bridge power module 100 of this application embodiment integrates parallel wide-bandgap power chips 23 and silicon-based power chips 24, forming a single-phase half-bridge power module 100 that combines wide-bandgap power chips 23 and silicon-based power chips 24. This allows for better expansion of current specifications and power levels while addressing switching losses and cost issues. Furthermore, by configuring the circuit unit 2 such that at least some of the wide-bandgap power chips 23 and silicon-based power chips 24 are not adjacent to power components of the same type, the power components operating simultaneously can be distributed as dispersed as possible, avoiding thermal coupling between power components of the same type and thus improving heat dissipation.

[0087] For ease of description, the following explanation will use the wide bandgap power chip 23 as a SiC MOSFET and the silicon-based power chip 24 as a Si IGBT as examples.

[0088] Referring to Figures 1-4, the conductive metal layer 11 may include a DC positive region 111, an AC region 112, and a DC negative region 113. Any one of the DC positive region 111, AC region 112, and DC negative region 113 can be square or irregularly shaped with multiple sides, and any one of the sides can be a right-angled side or a hypotenuse. Of course, this application is not limited to this; the shapes of the DC positive region 111, AC region 112, and DC negative region 113 can be flexibly set according to circuit layout requirements. Specifically, in inverter mode, the DC positive region 111 can be used for DC input, the DC negative region 113 can be used for DC output, and the AC region 112 can output AC; while in rectification mode, the AC region 112 can serve as the AC transmission region, and the DC positive region 111 and DC negative region 113 can serve as the DC output regions. In this way, each conductive area can connect various power components inside the module, thereby enabling the half-bridge power module to convert DC and AC power internally.

[0089] In some embodiments, referring to Figures 8-11, the multiple power elements in the upper bridge 21 and the lower bridge 22 are each divided into at least one row arranged along a first direction, and each row includes a plurality of power elements arranged along a second direction. For example, the multiple power elements in the upper bridge 21 may be arranged in one row, or in two or more rows, and the multiple power elements in the lower bridge 22 may be arranged in one row, or in two or more rows.

[0090] For example, as shown in Figures 8-10, multiple power components in the upper bridge 21 and lower bridge 22 are arranged in a single row, or as shown in Figure 11, multiple power components in the upper bridge 21 and lower bridge 22 are arranged in two rows. This ensures that each power component has sufficient space and facilitates the arrangement of the wide-bandgap power chip 23 and the silicon-based power chip 24 adjacent to power components of different types, thereby significantly reducing thermal coupling between similar power components and improving the heat dissipation performance of the half-bridge power module 100.

[0091] Referring to Figure 8, which illustrates one arrangement of power components in this application, the number of different types of power components satisfies the condition of complete dispersion, i.e., the number of different types of power components from most to least are a, b, and c, respectively, satisfying a-1≤b+c. Figure 8 shows an example of a power component arrangement when SiC MOSFET:Si IGBT:Diode 25 = 2:1:1, and Figure 9 shows an example of a power component arrangement when SiC MOSFET:Si IGBT:Diode 25 = 3:2:2. In both cases, the condition of complete dispersion is satisfied, and the power component layout can be designed according to the following principle: all power components are arranged in a line along the second direction, and different types of power components are staggered so that any power components of the same type are not adjacent to each other. In this case, multiple power components are arranged in a row. This arrangement allows power components that generate heat simultaneously to have greater distance, thereby reducing the impact of thermal coupling and effectively improving heat dissipation performance. The connecting lines 26 of each power component are connected to the corresponding copper layer along the first direction (the direction perpendicular to the power component arrangement direction), which enables power components at different positions to have good dynamic current sharing performance.

[0092] Referring to Figure 10, which illustrates another arrangement of power components in this application, the number of different types of power components does not meet the condition of complete dispersion. Specifically, when the number of different types of power components decreases from a to c, a-1 > b+c. Taking the power component ratio of SiC MOSFET:Si IGBT:Diode 25 = 4:1:1 as an example, since the condition of complete dispersion is not met, the power component layout can be designed according to the following principle: all power components are arranged in a line along the second direction, with different types of power components interleaved. For the fewer power components (Si IGBT, Diode 25), they are not adjacent to each other; for the most numerous power components (SiC MOSFET), the number of adjacent components is minimized. In this case, multiple power components are arranged in a row. This arrangement allows for greater distance between fewer power components and minimizes thermal coupling between the most numerous type of power component, thereby effectively improving heat dissipation performance. The connecting lines 26 of each power component are connected to the corresponding copper layer along the first direction (perpendicular to the power component arrangement direction), enabling power components at different positions to have good dynamic current sharing performance.

[0093] Referring to Figure 11, specifically, when the number of Si IGBTs and diodes 25 are equal, one Si IGBT and one diode 25 can be arranged along the first direction to form a Si IGBT / diode 25 chip pair. Multiple SiC MOSFETs and multiple Si IGBT / diode 25 chip pairs are arranged in a staggered pattern along the first direction, ensuring that no two types of power components are adjacent. In this case, the multiple power components are divided into two rows along the first direction. This arrangement can also reduce thermal coupling, improve heat dissipation, and reduce the size of the module in the first direction. The connection lines 26 of each power component are connected to the corresponding copper layer along the first direction (perpendicular to the power component arrangement direction), enabling power components at different locations to have good dynamic current sharing performance.

[0094] In some embodiments, the power components in the upper bridge 21 and the lower bridge 22 are arranged differently. Optionally, two power components opposite each other along the first direction in the upper bridge 21 and the lower bridge 22 are of different types. Figure 12 shows a schematic diagram of the power component arrangement in the upper bridge 21 and the lower bridge 22 of this application. As shown in Figure 12, the upper bridge 21 and the lower bridge 22 are arranged adjacently and are relatively close, which may result in significant thermal coupling between them. In this case, the upper bridge 21 and the lower bridge 22 can adopt different hybrid arrangement methods so that the upper bridge 21 and the lower bridge 22 meet the following characteristics: for either the upper bridge 21 or the lower bridge 22, power components of the same type are not adjacent to each other; for the upper bridge 21 and the lower bridge 22, the power components adjacent along the first direction are of different types. This arrangement method can minimize the thermal coupling between power components of the same type, thereby improving the overall heat dissipation performance of the hybrid module.

[0095] Of course, in some alternative embodiments, the power components opposite each other in the first direction between the upper bridge 21 and the lower bridge 22 are of the same type. Since the DC positive region where the upper bridge 21 is located and the AC region where the lower bridge 22 is located are arranged alternately, it can also reduce the thermal coupling between the same type of power components and improve the overall heat dissipation performance of the hybrid module.

[0096] In some embodiments, referring to FIG13, the power elements in the upper bridge 21 and the lower bridge 22 are arranged in the same way. As shown in FIG13, the upper bridge 21 and the lower bridge 22 are separated by other structures and are far apart, resulting in less thermal coupling between the upper bridge 21 and the lower bridge 22. In this case, the two upper bridges 21 and the lower bridge 22 can adopt the same hybrid arrangement, so that the upper bridge 21 and the lower bridge 22 satisfy the following characteristics: for either the power element group of the upper bridge 21 or the power element group of the lower bridge 22, power elements of the same type are not adjacent to each other; for the upper bridge 21 and the lower bridge 22, the power elements adjacent along the first direction are of the same type. This arrangement can shorten the commutation path between SiC MOSFETs, thereby reducing the loop inductance.

[0097] Furthermore, power components of the same type are arranged in the same row. For example, as shown in Figures 4 and 11, multiple power components in the upper bridge 21 and lower bridge 22 are arranged in two rows. Specifically, there are two wide-bandgap power chips 23, two silicon-based power chips 24, and two diodes 25. The two silicon-based power chips 24 are arranged in one row and spaced apart along the second direction, with a distance equal to at least one power component between them. The wide-bandgap power chips 23 and diodes 25 are arranged in the other row, and the wide-bandgap power components and diodes 25 are staggered along the second direction. This ensures that power components of the same type do not thermally couple, which is beneficial for improving the overall heat dissipation performance of the module and reducing heat dissipation pressure. In addition, it also ensures current sharing between two power components of the same type, thereby improving the reliability of the half-bridge power module 100.

[0098] In some embodiments, referring to Figures 1-4, at least a portion of the structures of each of the DC positive region 111, AC region 112, and DC negative region 113 extend along a second direction and are arranged sequentially along a first direction. For example, the DC positive region 111 can be integrally formed as a square extending along the second direction, or a portion of the DC positive region 111 can extend along the second direction while another portion can extend along the first direction; the DC negative region 113 can be integrally formed as a square extending along the second direction, or a portion of the DC negative region 113 can extend along the second direction while another portion can extend along the first direction; the AC region 112 can be integrally formed as a square extending along the second direction, or a portion of the AC region 112 can extend along the second direction while another portion can extend along the first direction; the shape and size of any two of the DC positive region 111, AC region 112, and DC negative region 113 can be the same or different, and can be reasonably set according to actual needs. The portions of each of the DC positive region 111, AC region 112, and DC negative region 113 extending along the second direction can be arranged along the first direction.

[0099] The upper bridge 21 is located in the portion of the DC positive region 111 extending along the second direction, and the lower bridge 22 is located in the portion of the AC region 112 extending along the second direction. Furthermore, multiple power elements of the upper bridge 21 are connected to the AC region 112 via connecting lines 26 along the first direction, and multiple power elements of the lower bridge 22 are connected to the DC negative region 113 via connecting lines 26 along the first direction.

[0100] During the operation of the half-bridge power module 100, part of the current flows from the DC positive region 111 to the DC negative region 113. The power chips of the same type in the upper bridge 21 are arranged in the same row and along the second direction, so that the arrangement direction of the power chips of the same type is perpendicular to the current flow direction between the upper bridge 21 and the AC region 112. This can at least ensure that the power chips of the same type in the upper bridge 21 have relatively close or even the same current path, which improves the current distribution. As a result, the power chips of the same type in the upper bridge 21 have good dynamic current sharing performance, which is conducive to ensuring the uniform distribution of current stress and thermal stress among the power chips of the same type.

[0101] Similarly, when the same type of power chips in the lower bridge 22 are arranged along the second direction, and each power chip is connected to the DC negative pole region 113 through the connecting line 26 along the first direction, the current output direction in the DC negative pole region 113 is the same as the current direction between each power chip and the DC negative pole region 113. This can enable the same type of power chips in the lower bridge 22 to have good dynamic current sharing performance, which is beneficial to ensure the uniform distribution of current stress and thermal stress among the same type of power chips.

[0102] Understandably, when multiple power components in the upper bridge 21 and the lower bridge 22 are arranged along the second direction, it can be ensured that the different power components in the upper bridge 21 and the lower bridge 22 have good dynamic current sharing performance.

[0103] Of course, the direction of the current output in the DC negative pole region 113 is related to the setting position of the DC negative terminal 118. This embodiment does not restrict the setting position of the DC negative terminal 118.

[0104] In other words, by setting it up as described above, it is possible to ensure that each wide bandgap power chip 23 of the upper bridge 21 has good dynamic current sharing performance, which is conducive to ensuring the uniform distribution of current stress and thermal stress among each wide bandgap power chip 23.

[0105] Referring to Figures 1-4, in some embodiments, the substrate 1 may further include a DC positive terminal 117, a DC negative terminal 118, and an AC terminal 119.

[0106] The DC positive terminal 117 can be disposed in the DC positive region 111 and led out in a direction perpendicular to the substrate 1, or the DC positive terminal 117 can be led out from the side of the DC positive region 111, for example, led out from the side of the substrate 1 in a first direction or a second direction.

[0107] The DC negative terminal 118 can be disposed in the DC negative region 113 and led out in a direction perpendicular to the substrate 1, or the DC negative terminal 118 can also be led out from the side of the DC negative region 113, for example, led out from the side of the substrate 1 in a first direction or a second direction.

[0108] The AC terminal 119 may be disposed within the AC area 112 and led out in a direction perpendicular to the substrate 1, or the AC terminal 119 may be led out from the side of the AC area 112, for example, led out from the side of the substrate 1 in a first direction or a second direction.

[0109] The DC positive terminal 117, DC negative terminal 118, and AC terminal 119 can each be led out in the same or different ways. Thus, the arrangement of each power terminal (including the DC positive terminal 117, DC negative terminal 118, and AC terminal 119) is diverse and can be rationally configured according to actual needs. Understandably, when the power terminals are led out along a direction perpendicular to the substrate 1, the internal circuit structure of the half-bridge power module 100 can be simplified, reducing the overall space occupied in the planar direction; while when the power terminals are led out along the side of the substrate 1, it is beneficial to reduce the overall space occupied in the thickness direction, making packaging easier.

[0110] Optionally, referring to Figures 1 and 2, when the DC positive terminal 117, DC negative terminal 118, and AC terminal 119 are all led out in a direction perpendicular to the substrate 1, any one of the DC positive terminal 117, DC negative terminal 118, and AC terminal 119 is adapted to the length of the upper bridge 21 along the second direction, and the length of the upper bridge 21 along the second direction is the same as the length of the lower bridge 22 along the second direction. Here, the length of the upper bridge 21 along the second direction refers to the distance between the end of the power element located at the beginning of the arrangement facing the third side 110c and the end of the power element located at the end of the arrangement facing the fourth side 110d. In this way, the commutation paths of power elements at different positions can be ensured to be similar or equal, thereby ensuring good dynamic current sharing performance between different chips.

[0111] Furthermore, referring to Figures 3 and 4, the DC positive terminal 117 and the DC negative terminal 118 are located on the same side of the substrate 1 along the first direction, and the AC terminal 119 is located on the side of the substrate 1 along the first direction opposite to the DC positive terminal 117.

[0112] Thus, the DC positive terminal 117, DC negative terminal 118, and AC terminal 119 can all be led out from the side where they are placed along the first direction. On the one hand, arranging the DC terminals on the same side and the AC terminals on the other side simplifies the construction of the external circuit used to connect the half-bridge power module 100. On the other hand, it allows the current from each power element in the AC region 112 to enter the DC negative terminal 113 and then be output through the DC negative terminal 118 in roughly the first direction. That is, the current confluence direction in the DC negative terminal 113 is parallel to the current direction between each power element in the AC region 112 and the DC negative terminal 113. Power elements of the same type have relatively close or even identical current paths, which improves the current distribution and greatly enhances the dynamic current sharing among power elements of the same type in the lower bridge 22. This helps to ensure the uniform distribution of current stress and thermal stress among power elements of the same type, thereby further improving the electrical performance and reliability of the half-bridge power module 100.

[0113] In some embodiments, referring to Figures 3 and 4, when multiple power elements in the upper bridge 21 and lower bridge 22 are divided into multiple rows arranged along the first direction, the row containing the wide-bandgap power chip 23 is closer to the DC positive terminal 117 and the DC negative terminal 118 along the first direction. This also helps to shorten the commutation loop of the SiC MOSFET, reduce parasitic inductance, shorten commutation time, and improve switching response efficiency.

[0114] In some embodiments, referring to Figures 1-4, the outer contour of the conductive metal layer 11 may be square, and the outer contour may include a first side 110a and a second side 110b opposite to each other along a first direction, and a third side 110c and a fourth side 110d opposite to each other along a second direction.

[0115] The DC positive region 111 may include a first transmission region 1111, which extends along the second direction. The two ends of the first transmission region 1111 may extend to the third side 110c and the fourth side 110d, respectively, or may be spaced apart from the third side 110c and the fourth side 110d by a certain distance. This allows the upper bridge 21, which occupies a certain size in the second direction, to be conveniently located within the first transmission region 1111.

[0116] The DC negative pole region 113 can be set along the second side 110b, that is, the DC negative pole region 113 extends along the second direction, and the DC negative pole region 113 and the first transmission region 1111 are opposite to each other along the first direction and are spaced apart.

[0117] The AC region 112 may include a first AC region 1121, which is located between the first transmission region 1111 and the DC negative region 113. The lower bridge 22 is located in the first AC region 1121. In this way, the upper bridge 21, the lower bridge 22, and the DC negative region 113 can be arranged along the first direction, which is beneficial to achieving dynamic current sharing between the same type of power elements of the upper bridge 21 and the lower bridge 22.

[0118] In some embodiments, referring to Figures 3 and 4, the DC positive region 111 may further include a second transmission region 1112 and a third transmission region 1113. The second transmission region 1112 is disposed along the third side 110c, and the third transmission region 1113 is disposed along the fourth side 110d. Both the second transmission region 1112 and the third transmission region 1113 extend along the first direction to the second side 110b. In this case, the first AC region 1121 and the DC negative region 113 are both located between the second transmission region 1112 and the third transmission region 1113. The DC positive terminal 117 is disposed on at least one of the second transmission region 1112 and the third transmission region 1113 and is led out from the second side 110b. Thus, the DC positive terminal 117 and the DC negative terminal 118 are located on the same side of the substrate 1 along the first direction. In addition, this is beneficial for shortening the commutation circuit of the SiC MOSFET, reducing parasitic inductance, shortening the commutation time, and improving the switching response efficiency.

[0119] In some embodiments, referring to Figures 3 and 4, each of the second transmission region 1112 and the third transmission region 1113 has an extension extending along a second side 110b at one end along a first direction away from the first transmission region 1111. There are two DC positive terminals 117, respectively located on the extensions of the second transmission region 1112 and the third transmission region 1113, and a DC negative terminal 118 is located between the two DC positive terminals 117. Thus, by providing two DC positive terminals 117, it is beneficial to reduce input impedance and reduce losses.

[0120] In some embodiments, referring to Figures 3 and 4, the AC region 112 may further include a second AC region 1122. Specifically, the second AC region 1122 is located on the side of the first transmission region 1111 facing the first side 110a. The second AC region 1122 is disposed along the first side 110a and is connected to the first AC region 1121 via a connecting line 26. An AC terminal 119 is disposed in the second AC region 1122, so that the AC terminal 119 is located on the side of the substrate 1 along the first direction opposite to the DC positive terminal 117.

[0121] In some embodiments, referring to Figures 3 and 4, the second AC region 1122 may further include an AC main region 1123 and a connection region 1124. The AC main region 1123 is disposed along a first side 110a, and an AC terminal 119 is disposed in the AC main region 1123 and extends out from the first side 110a along a first direction. There are two connection regions 1124, located on opposite sides of the first transmission region 1111 along a second direction. The first end of each connection region 1124 is connected to the AC main region 1123, and the second end extends towards the first AC region 1121, connected to the first AC region 1121 via a connection line 26. Thus, by arranging the AC terminal 119 on the side of the substrate 1 opposite to the DC positive terminal 117 along the first direction, the length of the connection line 26 connecting the first AC region 1121 and the second AC region 1122 can be shortened, which helps to reduce the resistance of the AC region 112 and thus reduce losses.

[0122] In some embodiments, in conjunction with Figures 3 and 4, the DC negative terminal 118 and the lower bridge 22 are opposite each other along a first direction. This can further shorten the distance between the multiple wide bandgap chips in the lower bridge 22 and the DC negative terminal 118, thereby improving the dynamic current sharing of each SiC MOSFET in the lower bridge 22.

[0123] In some embodiments, referring to Figures 5-7, the wide-bandgap power chip 23 includes a SiC MOSFET, and the silicon-based power chip 24 includes a Si IGBT. That is, in this embodiment, the copper layers of the SiC half-bridge and the IGBT half-bridge are electrically connected inside the power module. This reduces the commutation inductance of the SiC device and the IGBT device, shortens the commutation time, and improves efficiency.

[0124] As shown in Figure 5, the SiC MOSFET includes a source 231, a gate 232, and a drain 233. The drain 233 is located on the side of the SiC MOSFET facing the conductive metal layer 11 and is connected to the conductive region thereon through a welding or sintering process. The source 231 and the gate 232 are located on the side of the SiC MOSFET away from the conductive metal layer 11 and are used to connect to other conductive regions.

[0125] As shown in Figure 6, the Si IGBT includes an emitter 241, a gate 242, and a collector 243. The collector 243 is located at the bottom of the Si IGBT (the side of the Si IGBT facing the conductive metal layer 11) and is used to connect with the conductive region thereon by means of sintering, welding, etc. The emitter 241 and the gate 242 are located on the side of the Si IGBT away from the conductive metal layer 11 and are used to connect with other conductive regions.

[0126] As shown in Figure 7, the diode 25 includes a cathode 252 and an anode 251. The anode 251 is located at the top of the diode 25 (i.e., the side of the diode 25 facing away from the conductive metal layer 11) and is used for electrical connection with other conductive areas. The cathode 252 is located at the bottom of the diode 25 (i.e., the side of the diode 25 facing the conductive metal layer 11) and is connected to the conductive area thereon by sintering or welding.

[0127] In other words, the half-bridge power module 100 of this embodiment packages a SiC MOSFET and a Si IGBT in parallel. This allows the SiC MOSFET to perform the switching action using drive signals with different timings, while the Si IGBT bears most of the conduction current. This solves the problems of high switching losses and low switching frequency of IGBTs. Furthermore, a larger current can be controlled by a SiC MOSFET with a smaller current carrying capacity, thus solving the problem of high SiC cost. In this way, both the performance and cost of the half-bridge power module 100 can be balanced.

[0128] In some embodiments, in conjunction with Figures 1-4, the conductive metal layer 11 may further include: a first driving layer group 114 and a second driving layer group 115.

[0129] The first driving layer group 114 may include: a first SiC gate driving layer 1141, a first IGBT gate driving layer 1142, a first SiC source driving layer 1143, and a first IGBT emitter driving layer 1144. The gate 232 of the SiC MOSFET of the upper bridge 21 is connected to the first SiC gate driving layer 1141 via a connection line 26, the source 231 of the SiC MOSFET of the upper bridge 21 is connected to the first SiC source driving layer 1143 via a connection line 26, the gate 242 of the Si IGBT of the upper bridge 21 is connected to the first IGBT gate driving layer 1142 via a connection line 26, and the emitter 241 of the Si IGBT of the upper bridge 21 is connected to the first IGBT emitter driving layer 1144 via a connection line 26.

[0130] The second driving layer group 115 may include: a second SiC gate driving layer 1151, a second IGBT gate driving layer 1152, a second SiC source driving layer 1153, and a second IGBT emitter driving layer 1154. The gate 232 of the SiC MOSFET of the lower bridge 22 is connected to the second SiC gate driving layer 1151 through the connection line 26. The source 231 of the SiC MOSFET of the lower bridge 22 is connected to the second SiC source driving layer 1153 through the connection line 26. The gate 242 of the Si IGBT of the lower bridge 22 is connected to the second IGBT gate driving layer 1152 through the connection line 26. The emitter 241 of the Si IGBT of the lower bridge 22 is connected to the second IGBT emitter driving layer 1154 through the connection line 26.

[0131] Thus, by setting up the first driving layer group 114 and the second driving layer group 115, it is possible to facilitate the connection between each wide bandgap power chip 23, silicon-based power chip 24 and external circuits.

[0132] Optionally, driving terminals 116 are provided on the first SiC gate driving layer 1141, the first IGBT gate driving layer 1142, the first SiC source driving layer 1143, the first IGBT emitter driving layer 1144, the second SiC gate driving layer 1151, the second IGBT gate driving layer 1152, the second SiC source driving layer 1153, and the second IGBT emitter driving layer 1154. Each driving terminal 116 can be led out perpendicular to the substrate 1 to simplify the internal circuit structure of the half-bridge power module 100, reduce space occupation, and facilitate the connection of the half-bridge power module 100 with external circuits.

[0133] Optionally, referring to Figures 1-4 and Figure 14, the first SiC source driving layer 1143 and the first IGBT emitter driving layer 1144 are connected to form a first common copper layer 1145. In this case, the first SiC source driving layer 1143 and the first IGBT emitter driving layer 1144 can share the same driving terminal 116. This simplifies the internal structure of the half-bridge power module 100 and improves space utilization. Correspondingly, the second SiC source driving layer 1153 and the second IGBT emitter driving layer 1154 are connected to form a second common copper layer 1155. In this case, the second SiC source driving layer 1153 and the second IGBT emitter driving layer 1154 can share the same driving terminal 116. This also simplifies the internal structure of the half-bridge power module 100 and improves space utilization.

[0134] Optionally, referring to Figures 1-3, the first driving layer group 114 can be located between the DC positive region 111 and the AC region 112. Alternatively, referring to Figure 4, the DC positive region 111 can at least partially surround the first driving layer group 114. In this way, the distance between the power components in the DC positive region 111 and the first driving layer group 114 can be shortened as much as possible, thereby shortening the length of the connection lines 26 of each power component in the upper bridge 21, which is beneficial to reduce parasitic inductance and improve dynamic current sharing.

[0135] Optionally, referring to Figures 1-3, the second drive layer group 115 can be located between the DC negative pole region 113 and the AC region 112. Alternatively, referring to Figure 4, the AC region 112 can at least partially surround the second drive layer group 115. In this way, the distance between the power components in the AC region 112 and the second drive layer group 115 can be shortened as much as possible, thereby shortening the length of the connection lines 26 of each power component in the lower bridge 22, which is beneficial to reduce parasitic inductance and improve dynamic current sharing.

[0136] Of course, this application is not limited to this. The layout of the first driving layer group 114 and the second driving layer group 115 can be reasonably set according to the layout of the upper bridge 21 and the lower bridge 22 in order to minimize the transmission path of each driving signal, reduce parasitic inductance, improve efficiency, and facilitate connection with external circuits.

[0137] In some embodiments, the first SiC source drive layer 1143 is provided with a plurality of drive resistors corresponding one-to-one with and connected to the plurality of wide bandgap power chips 23 in the upper bridge 21; the second SiC source drive layer 1153 is provided with a plurality of drive resistors corresponding one-to-one with and connected to the plurality of wide bandgap power chips 23 in the lower bridge 22. The drive resistors can connect the gate 232 of the corresponding wide bandgap power chip 23, such as a SiC MOSFET, to the copper layer on which it is located. By setting the drive resistors, the gate current 232 of the SiC MOSFET can be limited, ensuring the switching speed and performance of the SiC MOSFET. In addition, the drive circuit can be protected from damage by overcurrent and overvoltage.

[0138] Optionally, the multiple driving resistors on the first SiC source driving layer 1143 can be connected in series or in parallel as needed, and the multiple driving resistors on the second SiC source driving layer 1153 can be connected in series or in parallel as needed.

[0139] Understandably, since the first SiC source drive layer 1143 is located on the side of the first SiC source drive layer 1143 closer to the DC positive region 111, and the second SiC source drive layer 1153 is located on the side of the second SiC source drive layer 1153 closer to the AC region 112, the driving resistors are brought closer to the corresponding SiC MOSFETs, minimizing the resistance and capacitance of the drive signal transmission, which is beneficial to improving the system's response speed and stability.

[0140] The following describes a full-bridge power module 300 according to a second aspect embodiment of this application.

[0141] Referring to Figure 17, the full-bridge power module 300 of this embodiment may include the half-bridge power module 100 described in the above embodiment. Specifically, there may be three half-bridge power modules 100, which are connected to the same heat sink 200 to form a three-phase full-bridge power module 300. Each half-bridge power module 100 corresponds to one of the single phases. For example, the three half-bridge power modules 100 include a first half-bridge power module 100, a second half-bridge power module 100, and a third half-bridge power module 100. The first half-bridge power module 100 corresponds to the U phase, the second half-bridge power module 100 corresponds to the V phase, and the third half-bridge power module 100 corresponds to the W phase. The first half-bridge power module 100, the second half-bridge power module 100, and the third half-bridge power module 100 may be arranged sequentially, or their arrangement may be adjusted as needed.

[0142] In addition, the full-bridge power module 300 may also include a heat sink 200, and the three half-bridge power modules 100 may all be mounted on the same heat sink 200.

[0143] The full-bridge power module 300 according to the embodiments of this application is composed of three half-bridge power modules 100 as described in the above embodiments. Since each half-bridge power module 100 is a plurality of parallel half-bridge circuits formed by wide-bandgap power chips 23 and silicon-based power chips 24, the current specification of the full-bridge power module 300 is greatly amplified, which can better convert DC power into AC power for use by electrical devices. It has stronger electrical performance and is more suitable for use as an automotive-grade power module.

[0144] The following describes an electrical appliance 400 according to an embodiment of a third aspect of this application.

[0145] The electrical device 400 in this embodiment can be a new energy vehicle or other types of electrical device 400. The electrical device 400 may include a power module, which may include the half-bridge power module 100 in the first aspect embodiment above, and / or the full-bridge power module 300 in the second aspect embodiment above.

[0146] Specifically, the electrical equipment 400 also includes an energy storage device and an electrical device. The energy storage device can be a battery pack, and the electrical device can be a motor, such as a three-phase AC motor. A power module is located between the energy storage device and the electrical device, converting the direct current (DC) generated by the energy storage device into alternating current (AC) for the electrical device. The electrical equipment 400 may only have a half-bridge power module 100, or only a full-bridge power module 300, or a combination of both as needed.

[0147] The electrical device 400 in this embodiment of the application can convert the direct current generated by the energy storage device into alternating current to power the electrical device, such as the motor, thereby providing power for the vehicle's movement. Furthermore, since the power module adopts the half-bridge power module 100 and / or the full-bridge power module 300 in the above embodiment, the current specification is higher, which can better perform AC-DC conversion and make the performance more reliable.

[0148] The various embodiments or implementation methods described in this specification are presented in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0149] It should be noted that the embodiments referred to in the specification, such as "one embodiment," "embodiment," "exemplary embodiment," and "some embodiments," may include specific features, structures, or characteristics, but not every embodiment necessarily includes that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, implementing such a feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not, is within the knowledge scope of those skilled in the art.

[0150] Generally speaking, terms should be understood at least in part by their use in context. For example, at least in part by context, the term "one or more" as used in the text can be used to describe any feature, structure, or characteristic of the singular meaning, or a combination of features, structures, or characteristics of the plural meaning. Similarly, at least in part by context, terms such as "a" or "the" can also be understood to convey either singular or plural usage.

[0151] It should be readily understood that the terms “on,” “above,” and “on top of” in this disclosure should be interpreted in the broadest possible sense, such that “on” means not only “directly on something” but also “on something” with an intermediate feature or layer therebetween, and that “above” or “on top of” means not only “on top of something” but also “on top of something” without an intermediate feature or layer therebetween (i.e., directly on something).

[0152] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A half-bridge power module (100), wherein, include: base(1); A circuit unit (2) is disposed on the substrate (1). The circuit unit (2) includes an upper bridge (21) and a lower bridge (22). Either the upper bridge (21) or the lower bridge (22) includes a wide bandgap power chip (23) and a silicon-based power chip (24). In the arrangement of the wide bandgap power chip (23) and silicon-based power chip (24), any two adjacent power elements belong to power elements with different substrates.

2. The half-bridge power module (100) according to claim 1, wherein, Either the upper bridge (21) or the lower bridge (22) may also include a diode (25). In the arrangement of the wide bandgap power chip (23), the silicon-based power chip (24) and the diode (25), any two adjacent power elements are power elements of different types.

3. The half-bridge power module (100) according to claim 2, wherein, The power elements of the lower bridge (22) are electrically connected to the power elements of the same type in the upper bridge (21) to form a half-bridge circuit, and the various power elements in the upper bridge (21) are connected in parallel with each other.

4. The half-bridge power module (100) according to claim 2, wherein, The substrate (1) is provided with a conductive metal layer (11), which includes a DC positive electrode region (111) and an AC region (112); The upper bridge (21) is located in the DC positive region (111), and the multiple power elements of the upper bridge (21) are electrically connected to the AC region (112).

5. The half-bridge power module (100) according to claim 4, wherein, The conductive metal layer (11) includes a DC negative electrode region (113), the lower bridge (22) is located in the AC region (112), and the power elements of the lower bridge (22) are electrically connected to the DC negative electrode region (113).

6. The half-bridge power module (100) according to claim 5, wherein, At least a portion of the structure of each of the DC positive region (111), the AC region (112), and the DC negative region (113) extends along a second direction and is arranged along a first direction, which is perpendicular to the second direction.

7. The half-bridge power module (100) according to claim 6, wherein, The power elements in the upper bridge (21) are arranged in at least one row.

8. The half-bridge power module (100) according to claim 7, wherein, The power elements in the upper bridge (21) are arranged in multiple rows.

9. The half-bridge power module (100) according to claim 8, wherein, When the multiple power elements in the upper bridge (21) are arranged in multiple rows, the multiple rows are arranged along the first direction.

10. The half-bridge power module (100) according to claim 7, wherein, The power elements in the lower bridge (22) are arranged in at least one row.

11. The half-bridge power module (100) according to claim 10, wherein, The power elements in the lower bridge (22) are arranged in multiple rows.

12. The half-bridge power module (100) according to claim 11, wherein, When the multiple power elements in the lower bridge (22) are arranged in multiple rows, the multiple rows are arranged along the first direction.

13. The half-bridge power module (100) according to claim 10, wherein, Each row includes several of the power elements arranged along the second direction.

14. The half-bridge power module (100) according to claim 13, wherein, Power components of the same type are placed in the same row.

15. The half-bridge power module (100) according to any one of claims 1-14, wherein, The power components in the upper bridge (21) and the lower bridge (22) are arranged in the same way.

16. The half-bridge power module (100) according to any one of claims 1-15, wherein, The power components in the upper bridge (21) and the lower bridge (22) are arranged differently.

17. The half-bridge power module (100) according to claim 15, wherein, The two power elements in the upper bridge (21) and the lower bridge (22) that are opposite each other along the first direction are of different types.

18. The half-bridge power module (100) according to claim 16, wherein, The two power elements in the upper bridge (21) and the lower bridge (22) that are opposite each other along the first direction are of the same type.

19. The half-bridge power module (100) according to claim 4, wherein, The half-bridge power module (100) further includes a DC positive terminal (117) located within the DC positive region (111) and extending out from a direction perpendicular to the substrate (1) or from a side of the DC positive region (111).

20. The half-bridge power module (100) according to claim 19, wherein, The half-bridge power module (100) further includes a DC negative terminal (118) located within the DC negative region (113) and extending out from a direction perpendicular to the substrate (1) or from the side of the DC negative region (113).

21. The half-bridge power module (100) according to claim 20, wherein, The half-bridge power module (100) further includes an AC terminal (119) which is located in the AC area (112) and extends out from a direction perpendicular to the substrate (1) or from the side of the AC area (112).

22. The half-bridge power module (100) according to claim 21, wherein, The DC positive terminal (117) and the DC negative terminal (118) are located on the same side of the substrate (1) along the first direction, and the AC terminal (119) is located on the side of the substrate (1) opposite to the DC positive terminal (117) along the first direction.

23. The half-bridge power module (100) according to claim 22, wherein, When the multiple power elements in the upper bridge (21) and the lower bridge (22) are all divided into multiple rows arranged along the first direction, The row containing the wide bandgap power chip (23) is closer to the DC positive terminal (117) and the DC negative terminal (118) along the first direction.

24. The half-bridge power module (100) according to claim 6, wherein, The outer contour of the conductive metal layer (11) includes a first side (110a) and a second side (110b) opposite to each other along the first direction, and a third side (110c) and a fourth side (110d) opposite to each other along the second direction. The DC positive region (111) includes a first transmission region (1111), which extends along the second direction, and the upper bridge (21) is located in the first transmission region (1111).

25. The half-bridge power module (100) according to claim 24, wherein, The DC negative pole region (113) is disposed along the second side (110b) and is opposite to and spaced from the first transmission region (1111) along the first direction, and the DC negative terminal (118) is led out from the second side (110b).

26. The half-bridge power module (100) according to claim 25, wherein, The AC region (112) includes a first AC region (1121), which is located between the first transmission region (1111) and the DC negative region (113), and the lower bridge (22) is located in the first AC region (1121).

27. The half-bridge power module (100) according to claim 26, wherein, The DC positive region (111) further includes a second transmission region (1112) and a third transmission region (1113). The second transmission region (1112) is disposed along the third side (110c), and the third transmission region (1113) is disposed along the fourth side (110d). Both the second transmission region (1112) and the third transmission region (1113) extend along the first direction to the second side (110b). The first AC region (1121) and the DC negative region (113) are located between the second transmission region (1112) and the third transmission region (1113), and the DC positive terminal (117) is disposed on at least one of the second transmission region (1112) and the third transmission region (1113).

28. The half-bridge power module (100) according to claim 27, wherein, The DC positive terminal (117) is led out from the second side (110b) of the conductive metal layer (11).

29. The half-bridge power module (100) according to claim 28, wherein, The second transmission area (1112) and the third transmission area (1113) are each provided with an extension extending along the second side (110b) at one end away from the first transmission area (1111) along the first direction. There are two DC positive terminals (117), which are respectively located on the extensions of the second transmission region (1112) and the third transmission region (1113), and the DC negative terminal (118) is located between the two DC positive terminals (117).

30. The half-bridge power module (100) according to claim 26, wherein, The communication area (112) further includes a second communication area (1122), which is located on the side of the first transmission area (1111) facing the first side (110a). The second AC area (1122) is disposed along the first side (110a) and is connected to the first AC area (1121) via a connecting line (26). The AC terminal (119) is disposed in the second AC area (1122).

31. The half-bridge power module (100) according to claim 30, wherein, The second communication area (1122) also includes: the main AC area (1123) and the connection area (1124). The AC main area (1123) is arranged along the first side (110a). There are two connection areas (1124). The two connection areas (1124) are located on both sides of the first transmission area (1111) along the second direction. The first end of each connection area (1124) is connected to the AC main area (1123), and the second end extends toward the direction close to the first AC area (1121). The second end is connected to the first AC area (1121) through a connection line (26).

32. The half-bridge power module (100) according to any one of claims 1-31, wherein, The wide bandgap power chip (23) includes a SiC MOSFET, and the silicon-based power chip (24) includes a SiIGBT.

33. The half-bridge power module (100) according to claim 32, wherein, The substrate (1) is provided with a conductive metal layer (11), and the conductive metal layer (11) further includes: The first driving layer group (114) includes: a first SiC gate driving layer (1141), a first IGBT gate driving layer (1142), a first SiC source driving layer (1143), and a first IGBT emitter driving layer (1144). The gate (232) of the SiC MOSFET of the upper bridge (21) is connected to the first SiC gate driving layer (1141), the source (231) of the SiC MOSFET of the upper bridge (21) is connected to the first SiC source driving layer (1143), the gate (242) of the SiIGBT of the upper bridge (21) is connected to the first IGBT gate driving layer (1142), and the emitter (241) of the SiIGBT of the upper bridge (21) is connected to the first IGBT emitter driving layer (1144).

34. The half-bridge power module (100) according to claim 33, wherein, The conductive metal layer (11) further includes a second driving layer group (115), comprising a second SiC gate driving layer (1151), a second IGBT gate driving layer (1152), a second SiC source driving layer (1153), and a second IGBT emitter driving layer (1154). The gate (232) of the SiC MOSFET of the lower bridge (22) is connected to the second SiC gate driving layer (1151), the source (231) of the SiC MOSFET of the lower bridge (22) is connected to the second SiC source driving layer (1153), the gate (242) of the SiIGBT of the lower bridge (22) is connected to the second IGBT gate driving layer (1152), and the emitter (241) of the SiIGBT of the lower bridge (22) is connected to the second IGBT emitter driving layer (1154).

35. The half-bridge power module (100) according to claim 34, wherein, The first SiC source driving layer (1143) and the first IGBT emitter driving layer (1144) are connected to form a first common copper layer (1145).

36. The half-bridge power module (100) according to claim 34, wherein, The second SiC source drive layer (1153) and the second IGBT emitter drive layer (1154) are connected to form a second common copper layer (1155).

37. The half-bridge power module (100) according to claim 33, wherein, There are multiple first driving layer groups (114), each of which is used to connect at least one of the SiC MOSFETs and at least one of the SiIGBTs in the upper bridge (21).

38. The half-bridge power module (100) according to claim 34, wherein, There are multiple second driving layer groups (115), each of which is used to connect at least one of the SiC MOSFETs and one of the SiIGBTs in the lower bridge (22).

39. A full-bridge power module (300), wherein, include: The half-bridge power module (100) according to any one of claims 1-38, wherein there are three half-bridge power modules (100), the three half-bridge power modules (100) are connected to the same heat dissipation base plate (200) and constitute a three-phase full-bridge power module (300), and each half-bridge power module (100) corresponds to one of the single phases.

40. An electrical appliance (400), wherein, Includes a power module, said power module comprising the half-bridge power module (100) according to any one of claims 1-38.

41. An electrical appliance (400), wherein, Includes a power module, the power module including the full-bridge power module (300) of claim 39.

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