Electronic device and method for producing electronic device

Abstract

This electronic device comprises a first bonded object, a second bonded object, and a first wire having a first bonding section, a second bonding section, and a loop section. The first bonding section is connected to one end of the loop section and is bonded to the first bonded object. The second bonding section is connected to the other end of the loop section and is bonded to the second bonded object. The first bonding section has a first raised section and two first extension sections. The first raised section protrudes to one side in the thickness direction and extends in a first direction. The two first extension sections extend from the first raised section to both sides in a second direction when viewed in the thickness direction.

Description

Electronic device and method for manufacturing electronic device

[0001] The present disclosure relates to electronic devices and methods for manufacturing electronic devices.

[0002] Patent Document 1 discloses a semiconductor device as an example of a conventional electronic device. The semiconductor device disclosed in the document includes a semiconductor element, a control terminal, and multiple wires connected to the control terminal. The multiple wires include a wire (74) bonded to a conductive portion to which the semiconductor element is bonded and a metal layer to which the control terminal is bonded. The wire is made of a material containing, for example, Cu (copper), similar to the conductor portion and metal layer. When bonding the wire to the conductor portion and metal layer, a large load is applied to the conductor portion and metal layer using a bonding tool. When bonding such a wire, problems can occur, such as wear caused by contact of the bonding tool with the conductor portion or the metal layer, or unstable bonding conditions between the wire and the conductor portion or the metal layer.

[0003] International Publication No. 2022 / 264834

[0004] [Summary] An object of the present disclosure is to provide an electronic device that is improved over conventional devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide an electronic device that can improve the bonding state of wires.

[0005] An electronic device provided by a first aspect of the present disclosure comprises a first joining object, a second joining object, and a first wire having a first joining portion, a second joining portion, and a loop portion, wherein the first joining portion is connected to one end of the loop portion and is joined to one side of the first joining object in a thickness direction, and the second joining portion is connected to the other end of the loop portion and is joined to one side of the second joining object in the thickness direction, and the first joining portion has a first protrusion that protrudes to one side of the thickness direction and extends in a first direction that intersects the thickness direction, and two first extension portions that extend from the first protrusion on both sides in a second direction that intersects the first direction, as viewed in the thickness direction.

[0006] A method for manufacturing an electronic device provided by a second aspect of the present disclosure includes a step of joining a first wire to one side in a thickness direction of a first joining object and one side in the thickness direction of a second joining object using a wedge bonding tool, the wedge bonding tool having a first surface facing the other side in the thickness direction and a groove recessed from the first surface to one side in the thickness direction, the cross-sectional shape of the groove narrowing toward one side in the thickness direction, and the length of the groove in the thickness direction being 57% or more and 64% or less of the diameter of the first wire.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a perspective view showing an electronic device according to a first embodiment of the present disclosure. FIG. 2 is a plan view showing an electronic device according to a first embodiment of the present disclosure. FIG. 3 is a view showing the sealing resin in the plan view of FIG. 2 with imaginary lines. FIG. 4 is a view showing the sealing resin and the second conductive member in the plan view of FIG. 3 , with the sealing resin and the second conductive member omitted. FIG. 5 is a view showing the plan view of FIG. 4 , with the first conductive member omitted. FIG. 6 is a partially enlarged plan view showing a portion of FIG. 5 . FIG. 7 is a bottom view showing an electronic device according to a first embodiment of the present disclosure. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3 . FIG. 9 is a partially enlarged cross-sectional view showing a portion of FIG. 8 (near the first element). FIG. 10 is a partially enlarged cross-sectional view showing a portion of FIG. 8 (near the second element). FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3 . FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3 . FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3 . 14 is a cross-sectional view taken along line XIV-XIV in FIG. 3. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 3. FIG. 16 is a partially enlarged cross-sectional view of FIG. 11. FIG. 17 is a partially enlarged plan view of FIG. 6. FIG. 18 is a partially enlarged plan view of FIG. 17. FIG. 19 is a partially enlarged plan view of FIG. 18. FIG. 20 is a partially enlarged plan view of FIG. 18. FIG. 21 is a partially enlarged cross-sectional view taken along line XXI-XXI in FIG. 19. FIG. 22 is a partially enlarged cross-sectional view taken along line XXII-XXII in FIG. 20. FIG. 23 is a partially enlarged cross-sectional view taken along line XXIII-XXIII in FIG. 18. FIG. 24 is a partially enlarged cross-sectional view taken along line XXIV-XXIV in FIG. 18. FIG. 25 is a partially enlarged cross-sectional view showing a method for manufacturing an electronic device according to a first embodiment of the present disclosure. Fig. 26 is a partially enlarged cross-sectional view showing a method for manufacturing an electronic device according to the first embodiment of the present disclosure. Fig. 27 is a partially enlarged cross-sectional view showing a method for manufacturing an electronic device according to the first embodiment of the present disclosure. Fig. 28 is a partially enlarged cross-sectional view showing a method for manufacturing an electronic device according to the first embodiment of the present disclosure. Fig. 29 is a partially enlarged cross-sectional view showing a method for manufacturing an electronic device according to the first embodiment of the present disclosure. Fig. 30 is a partially enlarged plan view showing an electronic device according to a second embodiment of the present disclosure. Fig. 31 is a cross-sectional view showing an electronic device according to the second embodiment of the present disclosure.FIG. 32 is a partially enlarged cross-sectional view of a portion of FIG. 31 . FIG. 33 is a partially enlarged plan view of a portion of FIG. 30 . FIG. 34 is a partially enlarged plan view of a portion of FIG. 33 . FIG. 35 is a cross-sectional view taken along line XXXV-XXXV of FIG. 34 . FIG. 36 is a partially enlarged plan view showing an electronic device according to a third embodiment of the present disclosure. FIG. 37 is a cross-sectional view showing an electronic device according to a third embodiment of the present disclosure. FIG. 38 is a partially enlarged view of FIG. 37 . FIG. 39 is a partially enlarged plan view of a portion of FIG. 36 . FIG. 40 is a partially enlarged plan view of a portion of FIG. 39 . FIG. 41 is a cross-sectional view taken along line XLI-XLI of FIG. 40 .

[0009] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 24 show an electronic device according to a first embodiment of the present disclosure. The electronic device A1 of this embodiment includes a support substrate 11, a plurality of power terminals 13, a plurality of electronic elements 21, a thermistor 22, a conductive bonding layer 23, a first conductive member 31, a second conductive member 32, a plurality of wires, a plurality of signal terminals 45, a terminal support 48, and a sealing resin 50. The plurality of power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16. The plurality of wires include a plurality of wires 41, a plurality of wires 42, a plurality of wires 43, and a first wire 44.

[0013] FIG. 1 is a perspective view of the electronic device A1. FIG. 2 is a plan view of the electronic device A1. FIG. 3 is a plan view of the electronic device A1, in which the sealing resin 50 is indicated by an imaginary line (two-dot chain line). FIG. 4 is a plan view of the electronic device A1, in which the sealing resin 50 and the second conductive member 32 are omitted from the plan view of FIG. 3. FIG. 5 is a plan view of the electronic device A1 in which the first conductive member 31 is omitted from the plan view of FIG. 4. FIG. 6 is a partially enlarged plan view of a portion of FIG. 5. FIG. 7 is a bottom view of the electronic device A1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIGS. 9 and 10 are partially enlarged cross-sectional views of a portion of FIG. 8. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3. Fig. 14 is a cross-sectional view taken along line XIV-XIV in Fig. 3. Fig. 15 is a cross-sectional view taken along line XV-XV in Fig. 3. Fig. 16 is a partially enlarged cross-sectional view of Fig. 11. Fig. 17 is a partially enlarged plan view of Fig. 6. Fig. 18 is a partially enlarged plan view of Fig. 17. Figs. 19 and 20 are partially enlarged plan views of Fig. 18. Fig. 21 is a partially enlarged plan view of Fig. 19. Fig. 22 is a partially enlarged cross-sectional view taken along line XXII-XXII in Fig. 20. Fig. 23 is a partially enlarged cross-sectional view taken along line XXIII-XXIII in Fig. 18. Fig. 24 is a partially enlarged cross-sectional view taken along line XXIV-XXIV in Fig. 18.

[0014] In these figures, the z direction corresponds to the "thickness direction" in this disclosure. "Plan view" refers to the view in the z direction. The x direction is perpendicular to the z direction. The y direction is perpendicular to the z direction and the x direction. Terms such as "top," "bottom," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component in the z direction, and do not necessarily define the relationship with the direction of gravity.

[0015] The electronic device A1 converts a DC power supply voltage applied to the first power terminal 14 and two second power terminals 15 into AC power using a plurality of electronic elements 21. The converted AC power is input from two third power terminals 16 to a power supply target such as a motor.

[0016] As shown in FIGS. 5 , 7 to 9 , 11 , 13 , and 14 , the support substrate 11 supports a plurality of electronic elements 21 in the z direction. As shown in FIGS. 4 to 16 , the support substrate 11 includes a first insulating layer 111, a support conductor 112, and a back surface metal layer 113. As shown in FIGS. 7 to 16 , the support substrate 11 is covered with a sealing resin 50 except for a portion of the back surface metal layer 113. The specific configuration of the support substrate 11 is not limited in any way. The support substrate 11 may be formed, for example, from an AMB (Active Metal Brazing) substrate or a DBC (Direct Bonded Copper) substrate. In the electronic device A1, the support substrate 11 is formed from an AMB substrate.

[0017] 8 to 16, the first insulating layer 111 includes a portion interposed between the support conductor 112 and the back surface metal layer 113 in the z direction. The first insulating layer 111 is made of a material with relatively high thermal conductivity. The first insulating layer 111 is made of ceramics including aluminum nitride (AlN) or silicon nitride (SiN4). The first insulating layer 111 may be made of an insulating resin sheet instead of ceramics.

[0018] As shown in FIGS. 4, 5, and 8 to 16, the support conductor 112 is located above the first insulating layer 111 in the z direction (on the z1 side). The metal material constituting the support conductor 112 contains Cu (copper) as a main component. As shown in FIGS. 8 and 14, the support conductor 112 is surrounded by the periphery of the first insulating layer 111 in a plan view. As shown in FIGS. 8 to 15, the support conductor 112 has a main surface 1120. The main surface 1120 is a plane facing the z1 side in the z direction. As shown in FIGS. 4, 5, and 8 to 15, the support conductor 112 includes a first conductive portion 1121 and a second conductive portion 1122. The first conductive portion 1121 and the second conductive portion 1122 are each rectangular in a plan view. The first conductive portion 1121 and the second conductive portion 1122 are spaced apart from each other in the x direction. The first conductive portion 1121 is located on the x1 side in the x direction with respect to the second conductive portion 1122. Each of the plurality of electronic elements 21 is bonded to either the first conductive portion 1121 or the second conductive portion 1122.

[0019] As shown in FIGS. 8 to 16 , the back surface metal layer 113 is located below (on the z2 side of) the first insulating layer 111 in the z direction. The back surface metal layer 113 has a bottom surface 1130. The bottom surface 1130 is a flat surface facing the z2 side in the z direction. As shown in FIG. 7 , the bottom surface 1130 is exposed from the sealing resin 50. A heat dissipation member (e.g., a heat sink) (not shown) can be attached to the bottom surface 1130 of the back surface metal layer 113. The metal material constituting the back surface metal layer 113 contains Cu (copper) as a main component. The back surface metal layer 113 is rectangular in plan view. The back surface metal layer 113 is surrounded by the periphery of the first insulating layer 111 in plan view.

[0020] The multiple electronic elements 21 are elements that perform the electrical functions of the electronic device A1. As shown in FIGS. 5, 6, and 8 to 11, each of the multiple electronic elements 21 is mounted on either the first conductive portion 1121 or the second conductive portion 1122. Each electronic element 21 is configured using a semiconductor material primarily composed of, for example, silicon carbide (SiC). The semiconductor material is not limited to SiC and may be silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), or the like. Each electronic element 21 is a switching element such as a metal-oxide-semiconductor field-effect transistor (MOSFET). Each electronic element 21 is not limited to a MOSFET and may be a field-effect transistor including a metal-insulator-semiconductor field-effect transistor (MISFET) or a bipolar transistor such as an insulated gate bipolar transistor (IGBT). Each of the multiple electronic elements 21 is, for example, an n-channel MOSFET, and all of the multiple electronic elements 21 are the same element. Each electronic element 21 may be a p-channel MOSFET.

[0021] As shown in Figures 5, 6, and 8 to 11, in the electronic device A1, the multiple electronic elements 21 include multiple first elements 21A and multiple second elements 21B. The structure of each of the multiple second elements 21B is the same as the structure of each of the multiple first elements 21A. The multiple first elements 21A are mounted on a first conductive portion 1121. The multiple first elements 21A are arranged along the y direction. The multiple second elements 21B are mounted on a second conductive portion 1122. The multiple second elements 21B are arranged along the y direction.

[0022] 9 and 10 , each of the electronic elements 21 has an element main surface 2101 and an element back surface 2102. In each electronic element 21, the element main surface 2101 and the element back surface 2102 are spaced apart in the z direction. The element main surface 2101 faces the z1 side in the z direction, and the element back surface 2102 faces the z2 side in the z direction.

[0023] 5, 6, 9, and 10, each of the electronic elements 21 has a first electrode 211, a second electrode 212, a third electrode 213, and two fourth electrodes 214. The second electrode 212, the third electrode 213, and the two fourth electrodes 214 are arranged on the element main surface 2101. The first electrode 211 is arranged on the element rear surface 2102.

[0024] 9 and 10 , the first electrode 211 faces either the first conductive part 1121 or the second conductive part 1122. A current corresponding to the power before being converted by the electronic element 21 flows through the first electrode 211. In other words, the first electrode 211 corresponds to the drain electrode of the electronic element 21.

[0025] 5 , 6 , 9 , and 10 , the second electrode 212 is located on the opposite side in the z direction to the first electrode 211. A current corresponding to the power converted by the electronic element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the source electrode of the electronic element 21.

[0026] 5 and 6 , the third electrode 213 is located on the same side as the second electrode 212 in the z direction. A gate voltage for driving the electronic element 21 is applied to the third electrode 213. In other words, the third electrode 213 corresponds to the gate electrode of the electronic element 21. In a plan view, the area of ​​the third electrode 213 is smaller than the area of ​​the second electrode 212.

[0027] As shown in FIGS. 5 , 6 , 9 , and 10 , the two fourth electrodes 214 are located on the same side as the second electrode 212 in the z direction and adjacent to the third electrode 213 in the second direction y. In the illustrated example, the two fourth electrodes 214 are arranged on both sides of the third electrode 213 in the second direction y, with the third electrode 213 sandwiched therebetween. The potential of each fourth electrode 214 is equal to the potential of the second electrode 212. The fourth electrode 214 corresponds to a source sense electrode. Unlike the illustrated example, each electronic element 21 may include only one of the two fourth electrodes 214, or may not include either of the two fourth electrodes 214. The constituent materials of the first electrode 211, the second electrode 212, the third electrode 213, and the fourth electrode 214 are not particularly limited and may include Al (aluminum) or Cu (copper). In this embodiment, the constituent material of each of the first electrode 211, the second electrode 212, the third electrode 213, and the fourth electrode 214 is Al.

[0028] As shown in FIGS. 9 and 10 , the conductive bonding layer 23 is interposed between one of the first conductive portions 1121 and 1122 and the first electrode 211 of one of the multiple electronic elements 21. The conductive bonding layer 23 is, for example, solder. Alternatively, the conductive bonding layer 23 may include a sintered body of metal particles (sintered metal). The first electrodes 211 of the multiple first elements 21A are conductively bonded to the first conductive portion 1121 via the conductive bonding layer 23. As a result, the first electrodes 211 of the multiple first elements 21A are electrically connected to the first conductive portion 1121. The first electrodes 211 of the multiple second elements 21B are conductively bonded to the second conductive portion 1122 via the conductive bonding layer 23. As a result, the first electrodes 211 of the multiple second elements 21B are electrically connected to the second conductive portion 1122. Unlike the present embodiment, the plurality of first elements 21A and the plurality of second elements 21B may be mounted on a metal member that is different from a part of the AMB substrate, etc. This metal member may be supported by, for example, the AMB substrate, etc.

[0029] The plurality of power terminals 13 are electrically connected to the plurality of electronic elements 21, respectively. A current corresponding to the power before being converted by the plurality of electronic elements 21 or a current corresponding to the power after being converted by the plurality of electronic elements 21 flows through the plurality of power terminals 13. The plurality of power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16.

[0030] As shown in FIGS. 4 and 11 , the first power terminal 14 is joined to the first conductive portion 1121. This joining method is not limited to any particular method and may be performed using a conductive bonding material (e.g., solder), laser welding, or crimping. The first power terminal 14 is electrically connected to the first electrodes 211 of the plurality of first elements 21A via the first conductive portion 1121. The first power terminal 14 is a P terminal (positive electrode) to which a DC power supply voltage to be converted into power is applied. As shown in FIG. 4 , the first power terminal 14 is located on the opposite side of the second conductive portion 1122 in the x direction, sandwiching the first conductive portion 1121 therebetween. The first power terminal 14 extends from the first conductive portion 1121 toward the x1 side in the x direction and protrudes from the sealing resin 50 toward the x1 side in the x direction. As shown in FIG. 3 , the first power terminal 14 includes a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 40. In the first power terminal 14, the portion covered with the sealing resin 50 is joined to the first conductive portion 1121. In the first power terminal 14, the portion exposed from the sealing resin 50 is used as the aforementioned P terminal of the electronic device A1.

[0031] A second conductive member 32 is joined to the two second power terminals 15. The two second power terminals 15 are electrically connected to the second electrodes 212 of the multiple second elements 21B via the second conductive member 32. The two second power terminals 15 are N terminals (negative electrodes) to which a DC power supply voltage to be converted is applied. The two second power terminals 15 are spaced apart from each other in the y direction. The first power terminal 14 is located between the two second power terminals 15. As shown in FIG. 4 , the two second power terminals 15 are located on the same side as the first power terminal 14 in the x direction with respect to the first conductive portion 1121 and the second conductive portion 1122. The two second power terminals 15 are spaced apart from the first conductive portion 1121 and the second conductive portion 1122. The two second power terminals 15 each extend in the x direction and protrude from the sealing resin 50 to the x1 side in the x direction. 3 , each of the two second power terminals 15 includes a portion covered with the sealing resin 50 and a portion exposed from the sealing resin 50. In each second power terminal 15, a second conductive member 32 is joined to the portion covered with the sealing resin 50. In each second power terminal 15, the portion exposed from the sealing resin 50 is used as the aforementioned N terminal of the electronic device A1.

[0032] As shown in FIGS. 4 and 8 , the two third power terminals 16 are each joined to the second conductive portion 1122. This joining is not limited to any particular method and may be performed using a conductive joining material (e.g., solder) (not shown), laser welding, or crimping. Each of the two third power terminals 16 is electrically connected to the first electrodes 211 of the plurality of second elements 21B via the second conductive portion 1122. Each of the two third power terminals 16 is electrically connected to the second electrodes 212 of the plurality of first elements 21A via the second conductive portion 1122 and the first conductive member 31. AC power converted by the plurality of electronic elements 21 (the plurality of first elements 21A and the plurality of second elements 21B) is output from the two third power terminals 16. In other words, each of the two third power terminals 16 is an output terminal for the AC power. The two third power terminals 16 are spaced apart from each other in the y direction. As shown in FIG. 4 , the two third power terminals 16 are located on the opposite side of the first conductive portion 1121 in the x direction, with the second conductive portion 1122 sandwiched between them. Each of the two third power terminals 16 extends from the second conductive portion 1122 toward the x2 side in the x direction and protrudes from the sealing resin 50 toward the x2 side in the x direction. As shown in FIG. 3 , each of the two third power terminals 16 includes a portion covered with the sealing resin 50 and a portion exposed from the sealing resin 50. In each third power terminal 16, the portion covered with the sealing resin 50 is joined to the second conductive portion 1122. In each third power terminal 16, the portion exposed from the sealing resin 50 is used as the aforementioned output terminal of the electronic device A1.

[0033] In this embodiment, the electronic device A1 includes four first elements 21A and four second elements 21B. However, the number of first elements 21A and the number of second elements 21B are not limited to this configuration and may be changed as appropriate depending on the performance required of the electronic device A1. In the example shown in FIG. 5, four first elements 21A and four second elements 21B are arranged. The number of first elements 21A and the number of second elements 21B may be two, three, or five or more. The number of first elements 21A and the number of second elements 21B may be equal to or different from each other. The number of first elements 21A and the number of second elements 21B is determined by the current capacity handled by the electronic device A1.

[0034] The electronic device A1 is configured, for example, as a half-bridge switching circuit. In this case, a plurality of first elements 21A form an upper arm circuit of the electronic device A1, and a plurality of second elements 21B form a lower arm circuit. In the upper arm circuit, the plurality of first elements 21A are connected in parallel with each other, and in the lower arm circuit, the plurality of second elements 21B are connected in parallel with each other. Each first element 21A and each second element 21B are connected in series to form a bridge layer.

[0035] The plurality of signal terminals 45 may be terminals for controlling the driving of each first element 21A and each second element 21B. Each of the plurality of signal terminals 45 is a pin-shaped terminal, for example, a press-fit terminal. The plurality of signal terminals 45 includes a plurality of first signal terminals 46A to 46C and a plurality of second signal terminals 47A to 47D. The plurality of first signal terminals 46A to 46C can be used for controlling each first element 21A, etc. The plurality of second signal terminals 47A to 47D can be used for controlling each second element 21B, etc.

[0036] The multiple first signal terminals 46A-46C are arranged at intervals in the y direction. As shown in Figures 5, 11, and 12, each of the first signal terminals 46A-46C is supported by the first conductive portion 1121 via a terminal support 48 (a first support portion 48A described below). As shown in Figures 4 and 5, each of the first signal terminals 46A-46C is located in the x direction between the multiple first elements 21A and the first power terminal 14 and two second power terminals 15.

[0037] The first signal terminal 46A is a terminal (gate terminal) for inputting a drive signal for the plurality of first elements 21 A. A drive signal for driving the plurality of first elements 21 A is input to the first signal terminal 46A (for example, a gate voltage is applied).

[0038] The first signal terminal 46B is a terminal (source sense terminal) for detecting source signals of the multiple first elements 21 A. The first signal terminal 46B detects a voltage (a voltage corresponding to a source current) applied to each second electrode 212 (source electrode) of the multiple first elements 21 A.

[0039] The first signal terminal 46C is a terminal (drain sense terminal) for detecting the drain voltage of the plurality of first elements 21A. The first signal terminal 46C detects the voltage (voltage corresponding to the drain current) applied to each of the first electrodes 211 (drain electrodes) of the plurality of first elements 21A.

[0040] The second signal terminals 47A to 47D are spaced apart in the y direction. As shown in Figures 5, 11, and 15, the second signal terminals 47A to 47D are supported by the second conductive portion 1122 via the terminal support 48 (second support portion 48B, described below). As shown in Figures 4 and 5, each of the second signal terminals 47A to 47D is located between the second elements 21B and two third power terminals 16 in the x direction.

[0041] The second signal terminal 47A is a terminal (gate terminal) for inputting drive signals for the multiple second elements 21B. A drive signal for driving the multiple second elements 21B is input to the second signal terminal 47A (e.g., a gate voltage is applied). The second signal terminal 47B is a terminal (source sense terminal) for detecting source signals for the multiple second elements 21B. The second signal terminal 47B detects a voltage (a voltage corresponding to a source current) applied to each second electrode 212 (source electrode) of the multiple second elements 21B. The second signal terminal 47C and the second signal terminal 47D are not electrically connected to any of the multiple second elements 21B. The second signal terminal 47C and the second signal terminal 47D are electrically connected to the thermistor 22.

[0042] Each of the plurality of signal terminals 45 (the plurality of first signal terminals 46 A to 46 C and the plurality of second signal terminals 47 A to 47 D) includes a holder 451 and a metal pin 452 .

[0043] The holder 451 is made of a conductive material. The holder 451 is disposed on the main surface 1120 of the support conductor 112 (support substrate 11). In this embodiment, as shown in FIG. 16 , the holder 451 is bonded to the terminal support 48 (a second metal layer 484 described below) via a conductive bonding layer 459. The holder 451 includes a cylindrical portion, an upper flange, and a lower flange. The upper flange is connected to the upper part of the cylindrical portion, and the lower flange is connected to the lower part of the cylindrical portion. A metal pin 452 is inserted through at least the upper flange and the cylindrical portion of the holder 451. A portion of the holder 451 is covered with a sealing resin 50.

[0044] The metal pin 452 is a rod-shaped member extending in the z direction. The metal pin 452 is supported by the holder 451 by being press-fitted into the holder 451. The metal pin 452 is electrically connected to the terminal support 48 (a second metal layer 484 and a metal layer 482 described below) via the holder 451 and the conductive bonding layer 459. The metal pin 452 protrudes toward the z1 side in the z direction from the upper surface of the sealing resin 50 (a resin main surface 51 described below).

[0045] The terminal support body 48 supports the plurality of signal terminals 45. The terminal support body 48 is interposed between the main surface 1120 of the first conductive portion 1121 and the main surface 1120 of the second conductive portion 1122 and the plurality of signal terminals 45 in the z direction.

[0046] The terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 1121 and supports the first signal terminals 46A to 46C of the signal terminals 45. As shown in FIG. 16 , the first support portion 48A is bonded to the first conductive portion 1121 via a bonding layer 49. The bonding layer 49 may be conductive or insulating, and may be made of solder, for example. The second support portion 48B is disposed on the second conductive portion 1122 and supports the second signal terminals 47A to 47D of the signal terminals 45. Like the first support portion 48A, the second support portion 48B is bonded to the second conductive portion 1122 via a bonding layer (not shown).

[0047] The terminal support 48 includes a second insulating layer 481 , a metal layer 482 , a metal layer 483 and a second metal layer 484 .

[0048] The second insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in plan view.

[0049] 16 and other figures, the metal layer 482 is formed on the upper surface of the second insulating layer 481. Each signal terminal 45 is provided upright on the metal layer 482. The metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy.

[0050] As shown in Fig. 16 , the metal layer 483 is formed on the lower surface (surface facing the z2 side in the z direction) of the second insulating layer 481. As shown in Fig. 16 , the metal layer 483 of the first support portion 48A is bonded to the first conductive portion 1121 via a bonding layer 49. The metal layer 483 of the second support portion 48B, like the metal layer 483 of the first support portion 48A, is bonded to the second conductive portion 1122 via a bonding layer (not shown). The second insulating layer 481, the metal layer 482, and the metal layer 483 described above are formed, for example, from a DBC substrate.

[0051] The second metal layer 484 is located above (on the z1 side in the z direction) the metal layer 482. The metal material constituting the second metal layer 484 contains Ni (nickel) as a main component. The second metal layer 484B is, for example, a plating layer laminated on the z1 side of the metal layer 482 in the z direction.

[0052] 5, 6, 17, etc., the metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, and a fifth portion 482E. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, and the fifth portion 482E are separated and insulated from each other.

[0053] A plurality of wires 41 are joined to the fourth portion 482D, and the fourth portion 482D is electrically connected to the third electrode 213 (gate electrode) of each of the first elements 21A (second elements 21B) via the wires 41. A plurality of wires 43 are connected between the fourth portion 482D and the first portion 482A. As a result, the first portion 482A is electrically connected to the third electrode 213 (gate electrode) of each of the first elements 21A (second elements 21B) via the wires 43 and 41. As shown in FIGS. 5 and 6 , a first signal terminal 46A is joined to the first portion 482A of the first support portion 48A, and a second signal terminal 47A is joined to the first portion 482A of the second support portion 48B.

[0054] A plurality of wires 42 are joined to the second portion 482B, and the second portion 482B is electrically connected to the fourth electrode 214 (source sense electrode) of each first element 21A (each second element 21B) via each wire 42. As shown in Figures 5 and 6, a first signal terminal 46B is joined to the second portion 482B of the first support portion 48A, and a second signal terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0055] The second signal terminal 47C is joined to the third portion 482C. As shown in FIGS. 5 and 6 , the second signal terminal 47C is joined to the third portion 482C of the second support portion 48B. The first signal terminal 46C and the second signal terminal 47D are joined to the fifth portion 482E. One end of the first wire 44 is joined to the fifth portion 482E of the first support portion 48A. The other end of the first wire 44 is joined to the first conductive portion 1121. As a result, the fifth portion 482E of the first support portion 48A is electrically connected to the first electrode 211 (drain electrode) of each first element 21A via the first wire 44. The second signal terminal 47D is joined to the fifth portion 482E of the second support portion 48B.

[0056] The thermistor 22 is conductively joined across the third portion 482C and the fifth portion 482E of the second support portion 48B. The thermistor 22 is, for example, a negative temperature coefficient (NTC) thermistor. NTC thermistors have the characteristic of gradually decreasing resistance as temperature increases. The thermistor 22 is used as a temperature detection sensor for the electronic device A1.

[0057] Each of the plurality of wires 41, the plurality of wires 42, the plurality of wires 43, and the first wire 44 provides electrical conduction between two separate locations. Each of the wires 41, 42, 43, and the first wire 44 is a so-called bonding wire. In this embodiment, each of the wires 41, 42, 43, and the first wire 44 is formed by wedge bonding. Each of the wires 41, 42, 43 may also be formed by ball bonding. The constituent material of each of the wires 41, 42, 43 is not particularly limited and may include, for example, gold (Au), aluminum (Al), or copper (Cu). In this embodiment, the constituent material of each of the wires 41, 42 includes aluminum, similar to the third electrode 213 to which the wires 41, 42 are bonded. The plurality of wires 41, 42, and 43 are omitted from FIGS. 3 , 8 to 12 , and 15 .

[0058] As shown in FIGS. 17 to 24, the first wire 44 has a first joint 441 , a second joint 442 , a loop portion 440 and two second bent portions 444 .

[0059] The first bonding portion 441 is a portion bonded to the first conductive portion 1121. The first bonding portion 441 is bonded to the z1 side of the first conductive portion 1121 in the z direction. The first conductive portion 1121 corresponds to a first bonding object (first metal layer) in the present disclosure. The support substrate 11 configured to include the first insulating layer 111 and the first conductive portion 1121 (support conductor 112) corresponds to a first support member in the present disclosure.

[0060] The second bonding portion 442 is a portion bonded to the terminal support 48. More specifically, the second bonding portion 442 is bonded to a second metal layer 484 formed on the fifth portion 482E of the first support 48A. The second metal layer 484 corresponds to a second bonding object in the present disclosure. The terminal support 48, which is configured to include the second insulating layer 481 and the second metal layer 484, corresponds to a second support member in the present disclosure.

[0061] The loop portion 440 is connected to a first joint portion 441 and a second joint portion 442. One end of the loop portion 440 is connected to the first joint portion 441, and the other end of the loop portion 440 is connected to the second joint portion 442. The loop portion 440 has a curved shape that is convex toward the z1 side in the z direction.

[0062] The constituent material of the first wire 44 is not particularly limited and may include, for example, any of Au (gold), Al (aluminum), or Cu (copper). In this embodiment, the constituent material of the first wire 44 includes Cu (copper) as a main component. The thickness of the first wire 44 is not limited in any way, and for example, the diameter of the loop portion 440 is 10 μm or more and 200 μm or less, e.g., approximately 150 μm. The grain size of the Cu crystal grains constituting the first wire 44 is, for example, 1.2 μm or more and 55.0 μm or less. The average grain size of the Cu crystal grains constituting the first wire 44 is, for example, 20.0 μm or more and 35.0 μm or less.

[0063] As shown in FIGS. 19, 21, and 23, the first joint portion 441 has a first protruding portion 4411 and two first extending portions 4412.

[0064] The first protrusion 4411 protrudes toward the z1 side in the z direction and extends in a first direction N1 when viewed in the z direction. The cross-sectional shape of the first protrusion 4411 is a mountain shape (or a substantially mountain shape), a triangular shape (or a substantially triangular shape), or the like, as shown in FIG. 21 . The first direction N1 is a direction that intersects with the z direction and, in this embodiment, is perpendicular to the z direction. The relationship between the first direction N1 and the x and y directions is not limited in any way. In the illustrated example, the first direction N1 is inclined with respect to the x and y directions.

[0065] The two first extending portions 4412 extend from the first protruding portion 4411 to both sides in the second direction N2. The cross-sectional shape of the first extending portion 4412 is rectangular (or approximately rectangular) as shown in FIG. 21 . The second direction N2 is a direction intersecting the first direction N1 and, in this embodiment, is perpendicular to the first direction N1. The second direction N2 is perpendicular to the z direction. The relationship between the second direction N2 and the x and y directions is not limited in any way. In the illustrated example, the second direction N2 is inclined with respect to the x and y directions.

[0066] The dimensions of the first protrusion 4411 and the first extending portion 4412 have the following relationship, for example: The length L2 of the first extending portion 4412 in the second direction N2 is 40% to 60% of the length L1 of the first protrusion 4411 in the second direction N2. The thickness t1 (dimension in the z direction) of the first extending portion 4412 is 25% to 50% of the length L3 of the first protrusion 4411 in the z direction. The thickness t1 of the first extending portion 4412 is 12% to 24% of the diameter of the loop portion 440. The length L1 of the first protrusion 4411 in the second direction N2 is longer than the length L3 of the first protrusion 4411 in the z direction.

[0067] To give specific examples of the dimensions of each part of the first raised portion 4411 and the first extending portion 4412, when the diameter of the loop portion 440 is approximately 150 μm, the length L1 of the first raised portion 4411 in the second direction N2 is approximately 140 μm, the length L2 of the first extending portion 4412 in the second direction N2 is approximately 60 μm, the length L3 of the first raised portion 4411 in the z direction is approximately 85 μm, and the thickness t1 of the first extending portion 4412 is approximately 25 μm. The specific dimensions of the lengths L1 to L3 and the thickness t1 are not limited to the above example dimensions.

[0068] As shown in FIGS. 20, 22, and 24, the second joint portion 442 has a first protruding portion 4411 and two first extending portions 4412.

[0069] The second protrusion 4421 protrudes toward the z1 side in the z direction and extends in a third direction N3 when viewed in the z direction. The cross-sectional shape of the second protrusion 4421 is a mountain shape (or a substantially mountain shape), a triangular shape (or a substantially triangular shape), or the like, as shown in FIG. 22 . The third direction N3 is a direction that intersects with the z direction and, in this embodiment, is perpendicular to the z direction. The relationship between the third direction N3 and the x direction and the y direction is not limited in any way. In the illustrated example, the third direction N3 is inclined with respect to the x direction and the y direction. In the illustrated example, the third direction N3 is the same direction as the first direction N1. The third direction N3 may be a direction different from the first direction N1.

[0070] The two second extending portions 4422 extend from the second protruding portion 4421 to both sides in the fourth direction N4. The cross-sectional shape of the second extending portion 4422 is rectangular (or approximately rectangular) as shown in FIG. 22 . The fourth direction N4 is a direction that intersects with the third direction N3 and, in this embodiment, is perpendicular to the third direction N3. The fourth direction N4 is perpendicular to the z direction. The relationship between the fourth direction N4 and the x and y directions is not limited in any way. In the illustrated example, the fourth direction N4 is inclined with respect to the x and y directions.

[0071] The two second bent portions 444 are individually connected to the two second extending portions 4422. The second bent portions 444 are located on the opposite side of the second protruding portion 4421 from the second extending portion 4422 in the fourth direction N4. The second bent portions 444 are bent toward the z1 side in the z direction from the second metal layer 484 (second bonding object) to which the second bonding portion 442 is bonded. Therefore, the second bent portions 444 are not bonded to the second metal layer 484 and are separated from the second metal layer 484.

[0072] The dimensions of the second protrusion 4421 and the second extending portion 4422 have the following relationship, for example: The length L5 of the second extending portion 4422 in the fourth direction N4 is 25% to 45% of the length L4 of the second protrusion 4421 in the fourth direction N4. The thickness t2 (dimension in the z direction) of the second extending portion 4422 is 25% to 45% of the length L6 of the second protrusion 4421 in the z direction. The thickness t2 of the second extending portion 4422 is 12% to 24% of the diameter of the loop portion 440. The length L4 of the second protrusion 4421 in the fourth direction N4 is longer than the length L6 of the second protrusion 4421 in the z direction.

[0073] To give specific examples of the dimensions of each part of the second raised portion 4421 and the second extending portion 4422, when the diameter of the loop portion 440 is approximately 150 μm, the length L4 of the second raised portion 4421 in the fourth direction N4 is approximately 140 μm, the length L5 of the second extending portion 4422 in the second direction N2 is approximately 55 μm, the length L6 of the second raised portion 4421 in the z direction is approximately 85 μm, and the thickness t2 of the second extending portion 4422 is approximately 22 μm. The specific dimensions of the lengths L4 to L6 and the thickness t2 are not limited to the above example dimensions.

[0074] As shown in FIGS. 4 and 8 , the first conductive member 31 is conductively bonded to the second electrodes 212 of the plurality of first elements 21A and the second conductive portion 1122. This allows the second electrodes 212 of the plurality of first elements 21A to be electrically connected to the second conductive portion 1122. The constituent material of the first conductive member 31 is not particularly limited and may include, for example, Cu. The first conductive member 31 is a plate-shaped metal clip (plate-shaped conductive member). As shown in FIGS. 4 and 8 , the first conductive member 31 has a main body portion 311, a plurality of first joint portions 312, and a plurality of second joint portions 313.

[0075] The main body portion 311 forms a major portion of the first conductive member 31. As shown in FIG. 4 , the main body portion 311 extends in the y direction. As shown in FIGS. 4 and 8 , the main body portion 311 straddles the first conductive portion 1121 and the second conductive portion 1122. As shown in FIG. 4 , a plurality of through holes 310 are formed in the main body portion 311. Each of the plurality of through holes 310 penetrates the main body portion 311 in the thickness direction z. In a plan view, the plurality of through holes 310 overlap between the first conductive portion 1121 and the second conductive portion 1122. This allows the sealing resin 50 to flow smoothly downward in the z direction (toward the z2 side in the z direction) of the main body portion 311 when forming the sealing resin 50.

[0076] As shown in FIGS. 4 and 8 , the multiple first joints 312 are individually joined to the second electrodes 212 of the multiple first elements 21A. Each of the multiple first joints 312 faces one of the second electrodes 212 of the multiple first elements 21A. In a plan view, each first joint 312 extends from the main body 311 toward the x1 side in the x direction. In the illustrated example, the multiple first joints 312 are bifurcated from the main body 311, but they do not have to be bifurcated. The base end of each first joint 312 (the end connected to the main body 311) is bent downward in the z direction (toward the z2 side in the z direction). Therefore, the tip of each first joint 312 (the end opposite to the end connected to the main body 311) is located lower in the z direction (toward the z2 side in the z direction) than the main body 311 in the z direction.

[0077] 4 and 8 , the multiple second joints 313 are joined to the second conductive portion 1122. Each of the multiple second joints 313 faces the second conductive portion 1122. In a plan view, each second joint 313 extends from the main body portion 311 toward the x2 side in the x direction. The base end of each second joint 313 (the end connected to the main body portion 311) is bent downward in the z direction (toward the z2 side in the z direction). Therefore, the tip end of each second joint 313 (the end opposite to the end connected to the main body portion 311) is located lower in the z direction (toward the z2 side in the z direction) than the main body portion 311 in the z direction.

[0078] 9 , the electronic device A1 further includes a first conductive bonding layer 33. The first conductive bonding layer 33 is interposed between the second electrodes 212 of the plurality of first elements 21A and the plurality of first bonding portions 312. The first conductive bonding layer 33 conductively bonds the second electrodes 212 of the plurality of first elements 21A to the plurality of first bonding portions 312. The first conductive bonding layer 33 is, for example, solder. Alternatively, the first conductive bonding layer 33 may include a sintered body of metal particles (sintered metal).

[0079] 8 , the electronic device A1 further includes a second conductive bonding layer 34. The second conductive bonding layer 34 is interposed between the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 conductively bonds the second conductive portion 1122 and the second bonding portion 313. More specifically, the second bonding portion 313 (first conductive member 31) is bonded to the main surface 1120 of the second conductive portion 1122 via the second conductive bonding layer 34. The second conductive bonding layer 34 is, for example, solder. Alternatively, the second conductive bonding layer 34 may include a sintered body of metal particles (sintered metal).

[0080] As shown in FIG. 3 , the second conductive member 32 is conductively joined to the second electrodes 212 of the plurality of second elements 21B and the two second power terminals 15. This electrically connects the second electrodes 212 of the plurality of second elements 21B to the two second power terminals 15. The constituent material of the second conductive member 32 is not particularly limited, and may include, for example, Cu. The second conductive member 32 is a plate-shaped metal clip. As shown in FIGS. 3 , 8 , and 11 to 14 , the second conductive member 32 has a pair of main body portions 321, a plurality of third joint portions 322, a pair of fourth joint portions 324, a plurality of intermediate portions 326, a plurality of cross beam portions 327, and a pair of hanging portions 328.

[0081] As shown in Fig. 3 , the pair of main body portions 321 are positioned apart from each other in the y direction. The pair of main body portions 321 extend in the x direction. As shown in Figs. 8 and 12 , the pair of main body portions 321 are arranged parallel to the upper surfaces of the first conductive portion 1121 and the second conductive portion 1122. The pair of main body portions 321 are positioned further away from the first conductive portion 1121 and the second conductive portion 1122 than the main body portion 311 of the first conductive member 31.

[0082] 3, 13, and 14, the intermediate portions 326 are spaced apart from one another in the y direction and are located between the pair of main body portions 321 in the y direction. The intermediate portions 326 extend in the x direction.

[0083] 3 and 14 , the third joints 322 are individually joined to the second electrodes 212 of the second elements 21B. Each of the third joints 322 faces one of the second electrodes 212 of the second elements 21B. In a plan view, the third joints 322 extend in the y direction from the intermediate portions 326. The base end of each third joint 322 (the end connected to the intermediate portion 326) is bent downward in the z direction (toward the z2 side in the z direction). Therefore, the tip of each third joint 322 (the end opposite to the end connected to the intermediate portion 326) is located lower in the z direction (toward the z2 side in the z direction) than the intermediate portion 326.

[0084] 3 and 8 , the pair of fourth joint portions 324 are individually joined to the two second power terminals 15. Each of the pair of fourth joint portions 324 faces a corresponding one of the two second power terminals 15.

[0085] As shown in Fig. 3 , the multiple cross beam portions 327 are arranged along the y direction. In a plan view, the multiple cross beam portions 327 include regions that individually overlap the multiple first joint portions 312 of the first conductive member 31. As shown in Figs. 3 and 13 , both sides in the y direction of the multiple cross beam portions 327 that are located at the center in the y direction are connected to the multiple intermediate portions 326. Both sides in the y direction of the remaining two cross beam portions 327 of the multiple cross beam portions 327 are connected to one of the pair of main body portions 321 and one of the multiple intermediate portions 326.

[0086] 3 and 13 , the pair of hanging portions 328 are individually connected to the pair of main body portions 321. As shown in FIG. 13 , each of the pair of hanging portions 328 extends downward in the z direction (toward the z2 side in the z direction) from the corresponding one of the pair of main body portions 321. Each of the pair of hanging portions 328 is connected to the outer edge in the y direction of the corresponding one of the pair of main body portions 321. In the illustrated example, the lower ends (edges on the z2 side in the z direction) of the pair of hanging portions 328 overlap the first conductive portion 1121 when viewed along the y direction.

[0087] 10 , the electronic device A1 further includes a third conductive bonding layer 35. The third conductive bonding layer 35 is interposed between the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 conductively bonds the second electrodes 212 of the plurality of second elements 21B to the plurality of third bonding portions 322. The third conductive bonding layer 35 is, for example, solder. Alternatively, the third conductive bonding layer 35 may include a sintered body of metal particles (sintered metal).

[0088] 8 , the electronic device A1 further includes a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 is interposed between the two second power terminals 15 and the pair of fourth joints 324. The fourth conductive bonding layer 36 conductively bonds the two second power terminals 15 and the pair of fourth joints 324. The fourth conductive bonding layer 36 is, for example, solder. Alternatively, the fourth conductive bonding layer 36 may include a sintered body of metal particles (sintered metal).

[0089] As shown in FIGS. 1 to 16 , the sealing resin 50 covers the electronic elements 21, the thermistor 22, the first conductive member 31, the second conductive member 32, the wires 41, the wires 42, the wires 43, the first wires 44, and the terminal support 48. Furthermore, the sealing resin 50 covers a portion of each of the support substrate 11, the power terminals 13, and the signal terminals 45. The sealing resin 50 has electrical insulation properties. The sealing resin 50 includes, for example, a black epoxy resin. The sealing resin 50 is formed, for example, by molding. As shown in FIGS. 1 to 3 and 7 to 15 , the sealing resin 50 has a resin main surface 51, a resin back surface 52, resin side surfaces 531 to 534, recesses 511, and a pair of recesses 531a.

[0090] As shown in FIGS. 8 and 11 to 15 , the resin main surface 51 faces the same direction in the z direction as the upper surface (main surface 1120) of the first conductive portion 1121 and the upper surface (main surface 1120) of the second conductive portion 1122. Metal pins 452 of the signal terminals 45 (the first signal terminals 46A to 46C and the second signal terminals 47A to 47D) protrude from the resin main surface 51. As shown in FIGS. 8 and 11 to 15 , the resin back surface 52 faces the opposite side of the resin main surface 51 in the z direction. As shown in FIG. 7 , the resin back surface 52 has a frame shape in a plan view that surrounds the lower surface (bottom surface 1130) of the back surface metal layer 113 of the support substrate 11. The back surface metal layer 113 of the support substrate 11 is exposed from the resin back surface 52. The lower surface (bottom surface 1130) of the back surface metal layer 113 is, for example, flush with the resin back surface 52.

[0091] As shown in Figures 2, 3, 8, and 11, the resin side surface 531 and the resin side surface 532 are spaced apart from each other in the x direction. The resin side surface 531 and the resin side surface 532 face opposite each other in the x direction and extend in the y direction. The resin side surface 531 and the resin side surface 532 are connected to the resin main surface 51. The resin side surface 531 faces the x1 side in the x direction, and the resin side surface 532 faces the x2 side in the x direction. A first power terminal 14 and two second power terminals 15 each protrude from the resin side surface 531. Two third power terminals 16 each protrude from the resin side surface 532.

[0092] 2, 3, and 12 to 15, the resin side surface 533 and the resin side surface 534 are spaced apart from each other in the y direction. The resin side surface 533 and the resin side surface 534 face opposite each other in the y direction and extend in the x direction. The resin side surface 533 and the resin side surface 534 are connected to the resin main surface 51 and the resin back surface 52. The resin side surface 533 faces the y1 side in the y direction, and the resin side surface 534 faces the y2 side in the y direction.

[0093] 1 , 11 , 12 , 15 , etc., each of the plurality of recesses 511 is recessed from the resin main surface 51 toward the z2 side in the z direction. In this embodiment, the plurality of recesses 511 are individually provided corresponding to the plurality of signal terminals 45. The plurality of signal terminals 45 are individually arranged corresponding to the plurality of recesses 511, respectively.

[0094] 2, the pair of recesses 531a are recessed from the resin side surface 531 toward the x2 side in the x direction. The pair of recesses 531a extend in the z direction from the resin main surface 51 to the resin back surface 52. The pair of recesses 531a are located on both sides of the first power terminal 14 in the y direction.

[0095] Next, a method for manufacturing the electronic device A1 will be described below with reference to FIGS.

[0096] First, a wedge bonding tool 80 is used to bond the tip of the first wire 44 to the z1 side of the first conductive portion 1121 (main surface 1120) in the z direction. FIG. 25 corresponds to the cross section shown in FIG. 23 . Here, wedge bonding (first bonding) is performed by applying a load and ultrasonic vibrations to the first wire 44 in contact with the first conductive portion 1121 using the wedge bonding tool 80. The first wire 44 used here contains Cu as a primary component. The average grain size of the Cu crystal grains constituting the first wire 44 is 20.0 μm or more and 35.0 μm or less. The average grain size of the crystal grains of the first wire 44 (Cu) can be measured, for example, based on a cross-sectional EBSD image. The method for measuring the average grain size of the crystal grains of the first wire 44 (Cu) is not limited to the above method.

[0097] 26 shows a state before wedge bonding is performed and corresponds to the cross section shown in FIG. 21 . The wedge bonding tool 80 has a first surface 81 and a groove 82. The first surface 81 is a flat surface facing the z2 side in the z direction. The groove 82 is recessed from the first surface 81 toward the z1 side in the z direction. The cross-sectional shape of the groove 82 narrows toward the z1 side in the z direction. Immediately before a load and ultrasonic vibrations are applied to the first wire 44, the first wire 44 is positioned between the first conductive portion 1121 (main surface 1120) and the groove 82 and first surface 81 in the z direction.

[0098] As an example of the dimensional relationship between the wedge bonding tool 80 and the first wire 44, the length L7 of the groove 82 in the z-direction is 57% to 64% of the diameter D1 of the first wire 44. The opening width W1 of the edge 821 of the groove 82 that intersects with the first surface 81 is 91% to 101% of the diameter D1 of the first wire 44. As a specific example of the length L7 of the groove 82 in the z-direction and the opening width W1 of the edge 821, when the diameter D1 of the first wire 44 is approximately 150 μm, the length L7 is approximately 85 μm and the opening width W1 of the edge 821 is approximately 140 μm. The specific dimensions of the length L7 and the opening width W1 are not limited to the above-mentioned exemplary dimensions.

[0099] 27, the first joint portion 441 is formed by the wedge bonding (first bonding) performed on the first wire 44. The first raised portion 4411 and the two first extending portions 4412 of the first joint portion 441 are formed by pressing the wedge bonding tool 80 against a part of the first wire 44. In FIG. 27, the first wire 44 and the wedge bonding tool 80 before wedge bonding (first bonding) are shown by imaginary lines (two-dot chain lines).

[0100] Next, a wedge bonding tool 80 is used to bond a portion of the first wire 44 to the z1 side in the z direction of the second metal layer 484. Fig. 28 corresponds to the cross section shown in Fig. 24. Here, wedge bonding (second bonding) is performed by applying a load and ultrasonic vibration to the first wire 44 in contact with the second metal layer 484 using the wedge bonding tool 80.

[0101] As shown in Fig. 29, the second joint portion 442 and two second bent portions 444 described above are formed by wedge bonding (second bonding) performed on the first wire 44. Fig. 29 corresponds to the cross section shown in Fig. 22. The second raised portion 4421 and two second extending portions 4422 of the second joint portion 442 are formed by pressing the wedge bonding tool 80 against a portion of the first wire 44. In Fig. 29, the first wire 44 and the wedge bonding tool 80 before wedge bonding (second bonding) are shown by imaginary lines (two-dot chain lines).

[0102] When forming the second joint portion 442 (second bonding), a larger load and ultrasonic vibration are applied to the first wire 44 compared to when forming the first joint portion 441 (first bonding). As a result, the thickness t2 of the second extending portion 4422 becomes smaller than the thickness t1 of the first extending portion 4412 at the first joint portion 441. Then, parts of the first wire 44 are pushed out from both ends of the first surface 81 of the wedge bonding tool 80 in the fourth direction N4, and two second bent portions 444 individually connected to the two second extending portions 4422 are formed.

[0103] In the second bonding, as described above, a larger load and ultrasonic vibration are applied to the first wire 44. As a result, an intermetallic compound of dissimilar metals is formed at the bonded portion between the first wire 44 and the second metal layer 484, consisting of Cu, which is the material of the first wire 44, and Ni, which is the material of the second metal layer 484.

[0104] After performing wedge bonding (second bonding), the wedge bonding tool 80 is moved slightly, and a cutting tool is used to cut the first wire 44 near the second bonded portion 442. In this way, the first wire 44 is formed with a first bonded portion 441 bonded to the first conductive portion 1121, a second bonded portion 442 bonded to the second metal layer 484, and a loop portion 440 between the first bonded portion 441 and the second bonded portion 442.

[0105] As described above, the average grain size of the first wire 44 (Cu) is 20.0 μm or more and 35.0 μm or less. Research by the present inventors has revealed that when the average grain size of the first wire 44 (Cu) is smaller than 20.0 μm, the metallic bond with the bonding object containing Ni (nickel) (in this embodiment, the second metal layer 484) is weak. On the other hand, when the average grain size of the first wire 44 (Cu) is larger than 35.0 μm, the hardness of the first wire 44 is reduced, and when a load is applied by the wedge bonding tool 80, the wedge bonding tool 80 may come into contact with the bonding object. Based on these findings, a range of 20.0 μm or more and 35.0 μm or less is appropriate for the average grain size of the first wire 44 (Cu).

[0106] Next, the operation of the electronic device A1 will be described.

[0107] In the electronic device A1, the first wire 44 has a first joint portion 441, a second joint portion 442, and a loop portion 440. The first joint portion 441 is connected to one end of the loop portion 440 and is joined to the z1 side in the z direction with respect to the first conductive portion 1121. The second joint portion 442 is connected to the other end of the loop portion 440 and is joined to the z1 side in the z direction with respect to the second metal layer 484 of the terminal support body 48.

[0108] The first bonding portion 441 has a first protrusion 4411 and two first extending portions 4412. The first protrusion 4411 protrudes toward the z1 side in the z direction and extends in the first direction N1. The two first extending portions 4412 extend from the first protrusion 4411 to both sides in the second direction N2. The configuration in which the first bonding portion 441 has the first protrusion 4411 and the two first extending portions 4412 can increase the bonding strength of the first bonding portion 441 to the first conductive portion 1121 (first bonding object).

[0109] The length L2 of the first extending portion 4412 in the second direction N2 is 40% to 60% of the length L1 in the second direction N2 of the first protruding portion 4411. With this configuration, the bonding area of ​​the first bonding portion 441 with respect to the first conductive portion 1121 can be increased, and the bonding reliability of the first bonding portion 441 can be improved.

[0110] The thickness t1 of the first extending portion 4412 is 25% to 50% of the length L3 of the first protruding portion 4411 in the z-direction. This configuration prevents the thickness t1 of the first extending portion 4412 from becoming excessively small. This prevents the wedge bonding tool 80 (first surface 81) from coming into contact with the first conductive portion 1121 (first bonding object) when the first bonding portion 441 is formed using the wedge bonding tool 80. This improves the bonding condition of the first bonding portion 441 and prevents wear on the wedge bonding tool 80.

[0111] In the wedge bonding tool 80 used to form the first joint 441, the length L7 of the groove 82 in the z-direction is 57% to 64% of the diameter D1 of the first wire 44. With this configuration, the length L7 of the groove 82 in the z-direction is relatively small compared to the diameter D1 of the first wire 44. As a result, even if a large load is applied to the first wire 44 when forming the first joint 441, the portion protruding from the groove 82 becomes the first extension 4412 and is interposed between the first conductive portion 1121 and the first surface 81. As a result, the thickness t1 of the first extension 4412 is appropriately large. The first wire 44 is primarily composed of Cu (first metal). Therefore, a larger load is applied to the first wire 44 when forming the first joint 441 than when bonding a wire made of, for example, Al. By ensuring that the length L7 of the groove 82 in the z direction and the diameter D1 of the first wire 44 have the above-mentioned dimensional relationship, the thickness t1 of the first extending portion 4412 is ensured to be an appropriate size.

[0112] The second bonding portion 442 has a second raised portion 4421 and two second extending portions 4422. The second raised portion 4421 protrudes toward the z1 side in the z direction and extends in the third direction N3. The two second extending portions 4422 extend from the second raised portion 4421 to both sides in the fourth direction N4. The configuration in which the second bonding portion 442 has the second raised portion 4421 and the two second extending portions 4422 can increase the bonding strength of the second bonding portion 442 to the second metal layer 484 (second bonding object).

[0113] The length L5 of the second extending portion 4422 in the fourth direction N4 is 25% to 45% of the length L4 of the second raised portion 4421 in the fourth direction N4. With this configuration, the bonding area of ​​the second bonding portion 442 with respect to the second metal layer 484 can be increased, and the bonding reliability of the second bonding portion 442 is improved.

[0114] The thickness t2 of the second extending portion 4422 is 25% to 45% of the length L6 of the second protruding portion 4421 in the z-direction. This configuration prevents the thickness t2 of the second extending portion 4422 from becoming excessively small. This prevents the wedge bonding tool 80 (first surface 81) from coming into contact with the second metal layer 484 (second bonding object) when the second bonding portion 442 is formed using the wedge bonding tool 80. This improves the bonding condition of the second bonding portion 442 and prevents wear on the wedge bonding tool 80.

[0115] In the wedge bonding tool 80 used to form the second joint 442, the length L7 of the groove 82 in the z-direction is 57% to 64% of the diameter D1 of the first wire 44. With this configuration, the length L7 of the groove 82 in the z-direction is relatively small compared to the diameter D1 of the first wire 44. As a result, even if a large load is applied to the first wire 44 during the formation of the second joint 442, the portion protruding from the groove 82 becomes the second extension 4422 and is interposed between the second metal layer 484 and the first surface 81. As a result, the thickness t2 of the second extension 4422 is appropriately large. The first wire 44 is primarily composed of Cu (first metal). Therefore, a larger load is applied to the first wire 44 during the formation of the second joint 442 than when bonding a wire made of, for example, Al. By ensuring that the length L7 of the groove 82 in the z direction and the diameter D1 of the first wire 44 have the above-mentioned dimensional relationship, the thickness t2 of the second extending portion 4422 is ensured to be of an appropriate size.

[0116] 30 to 41 show other embodiments of the electronic device of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and redundant explanations will be omitted. The configurations of the components in the other embodiments can be combined with each other as appropriate to the extent that no technical contradictions arise.

[0117] Second embodiment: Figures 30 to 35 show an electronic device A2 according to a second embodiment of the present disclosure. Figure 30 is a partially enlarged plan view showing the electronic device A2, and is a view similar to Figure 6. Figure 31 is a cross-sectional view showing the electronic device A2, and corresponds to the cross-section shown in Figure 11. Figure 32 is a partially enlarged cross-sectional view of a portion of Figure 31. Figure 33 is a partially enlarged plan view of a portion of Figure 30. Figure 34 is a partially enlarged plan view of a portion of Figure 33. Figure 35 is a cross-sectional view taken along line XXXV-XXXV in Figure 34.

[0118] In the electronic device A2, the configuration of the support conductors 112 in the support substrate 11 is different from that of the electronic device A1 of the above embodiment, and accordingly the configuration of the first wires 44 is different.

[0119] 31 and 32 , in this embodiment, the supporting conductor 112 includes a metal layer 112A and a first metal layer 112B. The metal layer 112A is formed on the upper surface (surface facing the z1 side in the z direction) of the first insulating layer 111. The metal material constituting the metal layer 112A includes, for example, Cu (copper) or a Cu (copper) alloy.

[0120] The first metal layer 112B is located above the metal layer 112A (on the z1 side in the z direction). In this embodiment, the first metal layer 112B has a main surface 1120. The metal material constituting the first metal layer 112B contains Ni (nickel) as a main component. The first metal layer 112B is, for example, a plating layer laminated on the z1 side of the metal layer 112A in the z direction. In the support substrate 11, the first insulating layer 111, the metal layer 112A, and the back surface metal layer 113 are, for example, composed of a DBC substrate.

[0121] The first bonding portion 441 of the first wire 44 is bonded to the first metal layer 112B on the z1 side in the z direction. The first metal layer 112B corresponds to a first bonding object in this disclosure.

[0122] As shown in FIG. 34 , the first wire 44 further includes two first bent portions 443. The two first bent portions 443 are individually connected to two first extending portions 4412 of the first joint portion 441. The first bent portions 443 are located on the opposite side of the first protruding portion 4411 from the first extending portion 4412 in the second direction N2. The first bent portions 443 are bent toward the z1 side in the z direction from the first metal layer 112B (first joining object) to which the first joint portion 441 is joined. Therefore, the first bent portions 443 are not joined to the first metal layer 112B and are separated from the first metal layer 112B. The configurations of the second joint portion 442 and the two second bent portions 444 are similar to those of the electronic device A1 of the above embodiment, and detailed description thereof will be omitted. In the electronic device A2, the first wire 44 is bonded to the first metal layer 112B and the second metal layer 484 by a method similar to that of the electronic device A1.

[0123] When forming the first joint portion 441 in the manufacturing of the electronic device A2, a larger load and ultrasonic vibration are applied to the first wire 44 compared to when forming the first joint portion 441 in the electronic device A1. As a result, the thickness t1 of the first extension portion 4412 becomes smaller than the thickness t1 of the first extension portion 4412 in the electronic device A1. Then, parts of the first wire 44 are pushed out from both ends in the second direction N2 of the first surface 81 of the wedge bonding tool 80, forming two first bent portions 443 individually connected to the two first extension portions 4412.

[0124] When forming the first joint 441 of this embodiment, as described above, a larger load and ultrasonic vibration are applied to the first wire 44. As a result, an intermetallic compound of dissimilar metals, Cu, which is the constituent material of the first wire 44, and Ni, which is the constituent material of the first metal layer 112B, is formed at the joint between the first wire 44 and the first metal layer 112B.

[0125] Next, the operation of the electronic device A2 will be described.

[0126] In the electronic device A2, the first joint portion 441 is joined to the z1 side in the z direction with respect to the first metal layer 112B of the first conductive portion 1121. The second joint portion 442 is joined to the z1 side in the z direction with respect to the second metal layer 484 of the terminal support body 48.

[0127] The first bonding portion 441 has a first raised portion 4411 and two first extending portions 4412. The first raised portion 4411 protrudes toward the z1 side in the z direction and extends in the first direction N1. The two first extending portions 4412 extend from the first raised portion 4411 to both sides in the second direction N2. The configuration in which the first bonding portion 441 has the first raised portion 4411 and the two first extending portions 4412 can increase the bonding strength of the first bonding portion 441 to the first metal layer 112B (first bonding object).

[0128] The length L2 of the first extending portion 4412 in the second direction N2 is 40% to 60% of the length L1 in the second direction N2 of the first raised portion 4411. With this configuration, the bonding area of ​​the first bonding portion 441 with respect to the first metal layer 112B can be increased, and the bonding reliability of the first bonding portion 441 is improved.

[0129] The thickness t1 of the first extending portion 4412 is 25% to 50% of the length L3 of the first protrusion 4411 in the z-direction. This configuration prevents the thickness t1 of the first extending portion 4412 from becoming excessively small. This prevents the wedge bonding tool 80 (first surface 81) from contacting the first metal layer 112B (first bonding object) when the first bonding portion 441 is formed using the wedge bonding tool 80. This improves the bonding condition of the first bonding portion 441 and prevents wear on the wedge bonding tool 80. Additionally, the electronic device A2 achieves the same effects as the electronic device A1 of the above embodiment.

[0130] Third Embodiment: Figures 36 to 41 show an electronic device A3 according to a third embodiment of the present disclosure. Figure 36 is a partially enlarged plan view showing the electronic device A3, and is a view similar to Figure 6. Figure 37 is a cross-sectional view showing the electronic device A3, and corresponds to the cross-section shown in Figure 11. Figure 38 is a partially enlarged cross-sectional view of a portion of Figure 37. Figure 39 is a partially enlarged plan view of a portion of Figure 36. Figure 40 is a partially enlarged plan view of a portion of Figure 39. Figure 41 is a cross-sectional view taken along line XLI-XLI in Figure 40.

[0131] The electronic device A3 is different from the electronic device A1 of the above embodiment in that it includes a terminal support substrate 60 instead of the terminal support body 48, and therefore the configuration of the first wires 44 is different.

[0132] The terminal support substrate 60 includes a first substrate 60A and a second substrate 60B. The first substrate 60A is disposed on a first conductive portion 1121 and supports a plurality of first signal terminals 46A to 46C among the plurality of signal terminals 45. As shown in FIG. 38 , the first substrate 60A is bonded to the first conductive portion 1121 via a bonding layer 69. The bonding layer 69 may be conductive or insulating, and is, for example, made of solder. The second portion 62B is disposed on a second conductive portion 1122 and supports a plurality of second signal terminals 47A to 47D among the plurality of signal terminals 45. Like the first portion 62A, the second portion 62B is bonded to the second conductive portion 1122 via a bonding layer (not shown).

[0133] The terminal support substrate 60 (each of the terminal support substrate 601 and the second substrate 60B) includes a base material 61 and a metal layer 62. The base material 61 is made of, for example, glass epoxy resin or ceramics. The base material 61 is rectangular in plan view. As shown in FIG. 38 , the base material 61 of the first substrate 60A is bonded to the first conductive portion 1121 via a bonding layer 69. As with the base material 61 of the first substrate 60A, the base material 61 of the second substrate 60B is bonded to the second conductive portion 1122 via a bonding layer (not shown). As shown in FIG. 38 , the metal layer 62 is formed on the upper surface of the base material 61. Each signal terminal 45 is provided upright on the metal layer 62. The metal material constituting the metal layer 62 contains Cu (copper) as a main component. The base material 61 and the metal layer 62 are formed, for example, by a PCB (Printed Circuit Board) substrate.

[0134] 36 , the metal layer 62 includes a first portion 62A, a second portion 62B, a third portion 62C, a fourth portion 62D, and a fifth portion 62E. The first portion 62A, the second portion 62B, the third portion 62C, the fourth portion 62D, and the fifth portion 62E are separated and insulated from one another. The shapes and arrangements of the first portion 62A, the second portion 62B, the third portion 62C, the fourth portion 62D, and the fifth portion 62E correspond to the first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, and the fifth portion 482E, respectively, of the electronic device A1 described above.

[0135] 39 and 40 , the first wire 44 has a first joint portion 441, a second joint portion 442, and a loop portion 440. In the present embodiment, the first wire 44 does not have a second bent portion 444.

[0136] The second bonding portion 442 is a portion bonded to the fifth portion 62E (metal layer 62). The second bonding portion 442 is bonded to the fifth portion 62E (metal layer 62) on the z1 side in the z direction. The metal layer 62 corresponds to the second bonding object in this disclosure. The configuration of the first bonding portion 441 is similar to that of the electronic device A1 in the above embodiment, and detailed description thereof will be omitted. In A3, the first wire 44 is bonded to the first conductive portion 1121 and the metal layer 62 by a method similar to that of the electronic device A1.

[0137] During the manufacture of the electronic device A3, when the second joint 442 is formed, the first wire 44 is subjected to a load and ultrasonic vibrations that are approximately the same as those applied when the first joint 441 is formed. This forms the second protrusion 4421 and two second extensions 4422. The thickness t2 of the second extension 4422 is approximately the same as the thickness t1 of the first extension 4412.

[0138] Next, the operation of the electronic device A3 will be described.

[0139] In the electronic device A3, the first joint portion 441 is joined to the z1 side in the z direction with respect to the first conductive portion 1121. The second joint portion 442 is joined to the z1 side in the z direction with respect to the metal layer 62 of the terminal support substrate 60.

[0140] The first bonding portion 441 has a first protrusion 4411 and two first extending portions 4412. The first protrusion 4411 protrudes toward the z1 side in the z direction and extends in the first direction N1. The two first extending portions 4412 extend from the first protrusion 4411 to both sides in the second direction N2. The configuration in which the first bonding portion 441 has the first protrusion 4411 and the two first extending portions 4412 can increase the bonding strength of the first bonding portion 441 to the first conductive portion 1121 (first bonding object). In addition, the electronic device A3 has the same effects as the electronic device A1 of the above embodiment.

[0141] The electronic device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the electronic device according to the present disclosure can be freely modified in various ways.

[0142] The present disclosure includes the configurations described in the following supplementary notes. Supplementary note 1: A first object to be joined (first conductive portion 1121, first metal layer 112B), a second object to be joined (second metal layer 484, metal layer 62), and a first wire (44) having a first bonding portion (441), a second bonding portion (442), and a loop portion (440), wherein the first bonding portion (441) is connected to one end of the loop portion (440) and is bonded to one side of the first object to be joined (first conductive portion 1121, first metal layer 112B) in the thickness direction, and the second bonding portion (442) is connected to the other end of the loop portion (440) and is bonded to one side of the second object to be joined (second metal layer 484, metal layer 62) in the thickness direction. The electronic device (A1, A2, A3) according to Appendix 1, wherein the first joint (441) has a first protruding portion (4411) that protrudes to one side in the thickness direction and extends in a first direction (N1) that intersects with the thickness direction, and two first extending portions (4412) that extend from the first protruding portion (4411) to both sides in a second direction (N2) that intersects with the first direction (N1). Appendix 2. The electronic device (A1, A2, A3) according to Appendix 1, wherein the length (L2) of the first extending portion (4412) in the second direction (N2) is 40% or more and 60% or less of the length (L1) of the first protruding portion (4411) in the second direction (N2). Appendix 3. The electronic device (A1, A2, A3) according to Supplementary Note 1 or 2, wherein the thickness (t1) of the first extension portion (4412) is 25% or more and 50% or less of the length (L3) of the first protrusion (4411) in the thickness direction. Supplementary Note 3-1. The electronic device (A1, A2, A3) according to any of Supplementary Note 1 to 3, wherein the thickness (t1) of the first extension portion (4412) is 12% or more and 24% or less of the diameter of the loop portion (440). Supplementary Note 3-2. The electronic device (A1, A2, A3) according to any of Supplementary Note 1 to 3-1, wherein the length (L1) of the first protrusion (4411) in the second direction (N2) is longer than the length (L3) of the first protrusion (4411) in the thickness direction.Supplementary Note 4. The electronic device (A2) according to any one of Supplementary Note 1 to Supplementary Note 3-2, wherein the first wire (44) is connected to the first extending portion (4412) and has a first bent portion (443) located on the opposite side of the first protruding portion (4411) in the second direction (N2) with the first extending portion (4412) as a reference, and the first bent portion (443) is bent from the first joining object (first metal layer 112B) to one side in the thickness direction. The electronic device (A1, A2, A3) according to any one of Supplementary Notes 1 to 4, wherein the second joint portion (442) has a second raised portion (4421) that protrudes to one side in the thickness direction and extends in a third direction (N3) that intersects with the thickness direction, and two second extending portions (4422) that extend from the second raised portion (4421) to both sides in a fourth direction (N4) that intersects with the third direction (N3) as viewed in the thickness direction.Supplementary Note 6. The electronic device (A1, A2, A3) according to Supplementary Note 5, wherein a length (L5) of the second extending portion (4422) in the fourth direction (N4) is 25% or more and 45% or less of a length (L4) of the second raised portion (4421) in the fourth direction (N4).Supplementary Note 7. The electronic device (A1, A2, A3) according to Supplementary Note 5 or 6, wherein the thickness (t2) of the second extension portion (4422) is 25% to 45% of the length (L6) of the second protrusion (4421) in the thickness direction. Supplementary Note 7-1. The electronic device (A1, A2, A3) according to any of Supplementary Note 5 to 7, wherein the thickness (t2) of the second extension portion (4422) is 12% to 24% of the diameter of the loop portion (440). Supplementary Note 7-2. The electronic device (A1, A2, A3) according to any of Supplementary Note 5 to 7-1, wherein the length (L4) of the second protrusion (4421) in the fourth direction (N4) is longer than the length (L6) of the second protrusion (4421) in the thickness direction. Supplementary Note 8. An electronic device (A1, A2) described in any one of Appendix 5 to Appendix 7-2, wherein the first wire (44) is connected to the second extension portion (4422) and has a second bent portion (444) located on the opposite side of the second protrusion portion (4421) relative to the second extension portion (4422) in the fourth direction (N4), and the second bent portion (444) is bent from the second joining object (second metal layer 484) to one side in the thickness direction.Appendix 9. The electronic device (A1, A2, A3) according to any one of Appendixes 1 to 8, wherein the first wire (44) is mainly composed of a first metal. Appendix 10. The electronic device (A1, A2, A3) according to Appendix 9, wherein the first bonding object (first conductive portion 1121, first metal layer 112B) is mainly composed of the first metal. Appendix 11. The electronic device (A1, A2, A3) according to Appendix 9 or 10, wherein the second bonding object (second metal layer 484, metal layer 62) is mainly composed of a second metal. Appendix 12. The electronic device (A1, A2, A3) according to any one of Appendixes 9 to 11, wherein the first metal is Cu. Appendix 13. The electronic device (A1, A2, A3) according to Appendix 12, wherein the average grain size of the crystal grains of the first wire (44) is 20.0 μm or more and 35.0 μm or less. Appendix 14. The electronic device (A1, A2, A3) according to Appendix 11, wherein the second metal is Ni. Appendix 15. The electronic device (A1, A2, A3) according to any one of Appendixes 1 to 14, further comprising a first support member (support substrate 11), wherein the first support member (support substrate 11) includes a first insulating layer (111) and a first metal layer (first conductive portion 1121, first metal layer 112B) located on one side of the first insulating layer (111) in the thickness direction, and wherein the first joining object is the first metal layer. Appendix 16. The electronic device (A1, A2) according to Appendix 15 further includes a second support member (terminal support 48), the second support member (terminal support 48) including a second insulating layer (481) and a second metal layer (484) located on one side of the second insulating layer (481) in the thickness direction, and the second joining object is the second metal layer. Appendix 17. The electronic device (A1, A2) according to Appendix 16, the second support member (terminal support 48) is mounted on one side of the first support member (support substrate 11) in the thickness direction. Appendix 17-1. The electronic device (A1, A2, A3) according to any one of Appendixes 15 to 17 further includes one or more electronic elements (first elements 21A) mounted on one side of the first metal layer (first conductive portion 1121, first metal layer 112B) in the thickness direction. Appendix 17-2. The electronic device (A1, A2, A3) according to Appendix 17-1, wherein the electronic element (first element 21A) is a switching element.Supplementary Note 17-3. The electronic device (A1, A2, A3) according to Supplementary Note 17-2, wherein the electronic element (first element 21A) has an element main surface (2101) facing one side in the thickness direction, an element back surface (2102) facing the other side in the thickness direction, a drain electrode (first electrode 211) arranged on the element back surface (2102), and a source electrode (second electrode 212) and a gate electrode (third electrode 213) arranged on the element main surface (2101), the drain electrode (first electrode 211) being bonded to the first metal layer (first conductive portion 1121, first metal layer 112B), and the first wire (44) being electrically connected to the drain electrode (first electrode 211) via the first metal layer (first conductive portion 1121, first metal layer 112B). Supplementary Note 18. A method for manufacturing electronic devices (A1, A2, A3), comprising: a step of joining a first wire (44) to one side in a thickness direction of a first object to be joined and one side in the thickness direction of a second object to be joined using a wedge bonding tool (80), wherein the wedge bonding tool (80) has a first surface (81) facing the other side in the thickness direction and a groove (82) recessed from the first surface (81) to one side in the thickness direction, wherein the cross-sectional shape of the groove (82) narrows toward one side in the thickness direction, and wherein the length (L7) of the groove (82) in the thickness direction is 57% or more and 64% or less of the diameter (D1) of the first wire (44). Appendix 19. A method for manufacturing an electronic device (A1, A2, A3) according to Appendix 18, wherein an opening width (W1) of an edge (821) of the groove (82) that intersects with the first surface (81) is 91% or more and 101% or less of a diameter (D1) of the first wire (44). Appendix 20. A method for manufacturing an electronic device (A1, A2, A3) according to Appendix 18 or 19, wherein the first wire (44) is mainly composed of Cu, and the average grain size of the crystal grains of the first wire (44) is 20.0 μm or more and 35.0 μm or less.

[0143] A1, A2, A3: Electronic device 11: Support substrate (first support member) 111: First insulating layer 112: Support conductor 112A: Metal layer 112B: First metal layer (first object to be joined) 1120: Main surface 1121: First conductive portion (first object to be joined) 1122: Second conductive portion 113: Back surface metal layer 1130: Bottom surface 13: Power terminal 14: First power terminal 15: Second power terminal 16: Third power terminal 21: Electronic element 21A: First element (electronic element) 21B: Second element (electronic element) 2101: Element main surface 2102: Element back surface 211: First electrode (drain electrode) 212: Second electrode (source electrode) 213: Third electrode (gate electrode) 214: Fourth electrode 22: Thermistor 23: Conductive bonding layer 31: First conductive member 310: Through hole 311: Main body portion 312: First bonding portion 313: Second bonding portion 32: Second conductive member 321: Main body portion 322: Third bonding portion 324: Fourth bonding portion 326: Intermediate portion 327: Horizontal beam portion 328: Hanging portion 33: First conductive bonding layer 34: Second conductive bonding layer 35: Third conductive bonding layer 36: Fourth conductive bonding layer 41, 42, 43: Wire 44: First wire 440: Loop portion 441: First bonding portion 4411: First protruding portion 4412: First extending portion 442: Second bonding portion 4421: Second protruding portion 4422: Second extending portion 443: First bent portion 444: Second bent portion 45: Signal terminal 451: Holder 452: Metal pin 459: Conductive bonding layer 46A, 46B, 36C: First signal terminal 47A, 47B, 47C, 47D: Second signal terminal 48: Terminal support (second support member) 48A: First support portion 48B: Second support portion 481: Second insulating layer 482: Metal layer 482A: First portion 482B: Second portion 482C: Third portion 482D: Fourth portion 482E: Fifth portion 483: Metal layer 484: Second metal layer (second bonding object) 49: Bonding layer 50: Sealing resin 51: Resin main surface 511, 512, 513: Recess 52: Resin back surface 531, 532, 533,534: Resin side surface 531a: Recess 60: Terminal support substrate 60A: First substrate 60B: Second substrate 61: Base material 62: Metal layer (second bonding object) 62A: First portion 62B: Second portion 62C: Third portion 62D: Fourth portion 62E: Fifth portion 69: Bonding layer 80: Wedge bonding tool 81: First surface 82: Recess 821: Edge D1: Diameter L1, L2, L3, L4, L5, L6, L7: Length N1: First direction N2: First direction N3: First direction N4: First direction t1, t2: Thickness W1: Opening width,

Claims

1. An electronic device comprising: a first joining object; a second joining object; and a first wire having a first joining portion, a second joining portion, and a loop portion, wherein the first joining portion is connected to one end of the loop portion and is joined to one side of the first joining object in the thickness direction; the second joining portion is connected to the other end of the loop portion and is joined to one side of the second joining object in the thickness direction; and the first joining portion has a first raised portion that protrudes to one side of the thickness direction and extends in a first direction that intersects the thickness direction, and two first extending portions that extend from the first raised portion to both sides in a second direction that intersects the first direction, as viewed in the thickness direction.

2. The electronic device according to claim 1, wherein the length of the first extension portion in the second direction is between 40% and 60% of the length of the first protrusion portion in the second direction.

3. The electronic device according to claim 1 or 2, wherein the thickness of the first extension portion is 25% or more and 50% or less of the length of the first protrusion portion in the thickness direction.

4. An electronic device as described in any one of claims 1 to 3, wherein the first wire is connected to the first extension portion and has a first bent portion located on the opposite side of the first protrusion portion in the second direction relative to the first extension portion, and the first bent portion bends from the first joining object to one side in the thickness direction.

5. An electronic device as described in any one of claims 1 to 4, wherein the second joint portion has a second raised portion that protrudes to one side in the thickness direction and extends in a third direction that intersects with the thickness direction, and two second extending portions that extend from the second raised portion to both sides in a fourth direction that intersects with the third direction, as viewed in the thickness direction.

6. The electronic device according to claim 5, wherein the length of the second extension portion in the fourth direction is between 25% and 45% of the length of the second protrusion portion in the fourth direction.

7. The electronic device according to claim 5 or 6, wherein the thickness of the second extension portion is 25% to 45% of the length of the second protrusion portion in the thickness direction.

8. An electronic device as described in any one of claims 5 to 7, wherein the first wire is connected to the second extension portion and has a second bent portion located on the opposite side of the second protrusion portion in the fourth direction relative to the second extension portion, and the second bent portion bends from the second joining object to one side in the thickness direction.

9. The electronic device according to any one of claims 1 to 8, wherein the first wire is mainly composed of a first metal.

10. The electronic device according to claim 9, wherein the first joining object is mainly composed of the first metal.

11. The electronic device according to claim 9 or 10, wherein the second object to be joined is mainly composed of a second metal.

12. The electronic device according to any one of claims 9 to 11, wherein the first metal is Cu.

13. The electronic device according to claim 12, wherein the average grain size of the crystal grains of the first wire is 20.0 μm or more and 35.0 μm or less.

14. The electronic device of claim 11, wherein the second metal is Ni.

15. An electronic device as described in any one of claims 1 to 14, further comprising a first support member, the first support member including a first insulating layer and a first metal layer located on one side of the first insulating layer in the thickness direction, and the first joining object being the first metal layer.

16. The electronic device according to claim 15, further comprising a second support member, the second support member including a second insulating layer and a second metal layer located on one side of the second insulating layer in the thickness direction, and the second joining object being the second metal layer.

17. The electronic device according to claim 16, wherein the second support member is mounted on one side of the first support member in the thickness direction.

18. A method for manufacturing an electronic device, comprising the step of using a wedge bonding tool to bond a first wire to one side in a thickness direction of a first object to be bonded and to one side in the thickness direction of a second object to be bonded, wherein the wedge bonding tool has a first surface facing the other side in the thickness direction and a groove recessed from the first surface to one side in the thickness direction, wherein the cross-sectional shape of the groove narrows toward one side in the thickness direction, and the length of the groove in the thickness direction is 57% to 64% of the diameter of the first wire.

19. The method for manufacturing an electronic device according to claim 18, wherein the opening width of the edge of the groove that intersects with the first surface is 91% or more and 101% or less of the diameter of the first wire.

20. A method for manufacturing an electronic device as described in claim 18 or 19, wherein the first wire is mainly composed of Cu, and the average grain size of the crystal grains of the first wire is 20.0 μm or more and 35.0 μm or less.

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