Method for manufacturing electronic device

Abstract

A method for manufacturing an electronic device, according to some embodiments of the present invention, comprises: preparing a substrate; forming a conductive material layer on the substrate; and patterning the conductive material layer to form a wiring. Each of the substrate and the conductive material layer includes a polymer having siloxane bonds. The conductive material layer further includes silver (Ag) particles. The patterning of the conductive material layer includes irradiating a first laser onto the conductive material layer. The first laser has an infrared wavelength.

Description

Electronic device manufacturing method

[0001] The present invention relates to a method for manufacturing an electronic device.

[0002]

[0003] With the recent rise in demand for telemedicine and other services, next-generation healthcare devices are attracting attention. These devices are becoming increasingly miniaturized and require smooth, highly integrated, and multi-functional circuits.

[0004] Various electrode and electronic component manufacturing methods have been proposed for the manufacture of these next-generation healthcare devices, but they have struggled to meet high durability and resolution requirements. Consequently, extensive research is underway to develop a method for manufacturing multilayer electronic components that simultaneously meet high resolution and durability.

[0005]

[0006] The technical problem to be solved by the present invention is to provide an electronic device having high electrical conductivity and high durability.

[0007] The technical problem to be solved by the present invention is to provide a method for manufacturing an electronic device with high processability.

[0008] The technical problem to be solved by the present invention is to provide a method for manufacturing an electronic device that manufactures wiring and vias with high resolution.

[0009]

[0010] A method for manufacturing an electronic device according to some embodiments of the present invention may include preparing a substrate, forming a conductive material layer on the substrate, and patterning the conductive material layer to form wiring. The substrate and the conductive material layer may each include a polymer having a siloxane bond. The conductive material layer may further include silver (Ag) particles. Patterning the conductive material layer may include irradiating a first laser onto the conductive material layer. The first laser may have an infrared wavelength.

[0011] A method for manufacturing an electronic device according to some embodiments of the present invention may include preparing a substrate, forming a first conductive material layer on the substrate, irradiating a first laser onto the first conductive material layer to form a first wiring, forming a passivation layer on the substrate and the first wiring, forming a via hole penetrating the passivation layer and exposing an upper surface of the first wiring, forming a second conductive material layer on the passivation layer, and irradiating a second laser onto the second conductive material layer to form a second wiring and a via. The substrate, the first conductive material layer, the passivation layer, and the second conductive material layer may each include a polymer having a siloxane bond. The first conductive material layer and the second conductive material layer may each include silver particles. The first laser and the second laser may each have an infrared wavelength.

[0012]

[0013] The electronic device according to the present invention can have high electrical conductivity and high durability.

[0014] The method for manufacturing an electronic device according to the present invention has high process easiness and can manufacture wiring and vias with high resolution.

[0015]

[0016] FIG. 1A is a plan view of an electronic device according to some embodiments of the present invention.

[0017] Figure 1b is a cross-sectional view taken along line AA' of Figure 1a.

[0018] FIG. 2A is a plan view of an electronic device according to some embodiments of the present invention.

[0019] Figure 2b is a cross-sectional view taken along line BB' of Figure 2a.

[0020] FIGS. 3a to 3r illustrate a method for manufacturing an electronic device according to FIGS. 1a and 1b.

[0021] Figure 4a is a plan view of <Comparative Example> and <Examples 1> to <Examples 3>.

[0022] Figure 4b is a cross-sectional view taken along line DD' of Figure 4a.

[0023] Figure 5 is an optical microscope observation result of the plane of <Comparative Example>.

[0024] Figure 6 shows the optical microscope observation results of the plane of <Example 1>.

[0025] Figure 7 shows the optical microscope observation results of the plane of <Example 2>.

[0026] Figure 8 shows the optical microscope observation results of the plane of <Example 3>.

[0027] Figure 9 shows the SEM observation results of the plane of <Example 1>.

[0028] Figure 10 shows a graph of the resistance ratio (R / R0) according to the number of expansion experiment cycles (Cycle) of <Comparative Example>, <Example 1>, <Example 2>, and <Example 3>.

[0029] Figure 11 shows the electrical conductivity (Conductivity, S cm) according to the strain (%) of <Comparative Example>, <Example 1>, <Example 2>, and <Example 3>. -1 ) represents the graph.

[0030] Figure 12 is the SEM observation result of the via hole of Figure 3i.

[0031] Figure 13 is the result of measuring depth (㎛) according to position (㎛) along the E-E' line of Figure 3i.

[0032] Figure 14 shows the electrical conductivity (Conductivity, S cm) according to the strain (%) of the electronic devices of Figures 1a and 1b, in which the via holes are 50㎛×50㎛ square in shape. -1 ) represents the graph.

[0033] Fig. 15 shows a graph of the resistance ratio (R / R0) according to the number of stretching experiment cycles of the electronic devices of Fig. 2a and Fig. 2b, in which the via hole is a square shape of 200㎛×200㎛.

[0034]

[0035] Hereinafter, electronic devices and their manufacturing methods according to some embodiments of the present invention will be described in detail with reference to the drawings.

[0036]

[0037] FIG. 1A is a plan view of an electronic device according to some embodiments of the present invention. FIG. 1B is a cross-sectional view taken along line AA' of FIG. 1A.

[0038] Referring to FIGS. 1A and 1B, an electronic device (10) according to some embodiments of the present invention may include a substrate (100), a conductive pattern (200), and a passivation layer (300).

[0039] A substrate (100) may be provided. The substrate (100) may include a polymer having a siloxane bond. For example, the substrate (100) may include polydimethylsiloxane (PDMS).

[0040] A conductive pattern (200) may be arranged on a substrate (100). The conductive pattern (200) may include a polymer having a siloxane bond and silver (Ag) particles. The polymer having a siloxane bond may be polydimethylsiloxane. The silver particles may be silver nanoflakes.

[0041] The conductive pattern (200) may include a first wiring (201), a via (202), and a second wiring (203). The first wiring (201) may be disposed on the substrate (100). The via (202) may be disposed on the first wiring (201). The second wiring (203) may be disposed on the via (202). The via (202) may be disposed between the first wiring (201) and the second wiring (203) to electrically connect them (201, 203).

[0042] The first wiring (201), the via (202), and the second wiring (203) may each include a polymer having a siloxane bond and silver (Ag) particles. The polymer having a siloxane bond may be polydimethylsiloxane. The silver particles may be silver nanoflakes. The composition ratio of the polymer having a siloxane bond and the silver particles in the via (202) and the second wiring (203) may be the same.

[0043] The second wire (203) may be directly or indirectly attached to the user's body. Specifically, the second wire (203) may function as a sensor electrode that measures medical information about the user's body. Alternatively, the second wire (203) may be connected to a sensor chip, and medical information about the user's body may be measured through the sensor chip.

[0044] A passivation layer (300) may be disposed on the substrate (100). The passivation layer (300) may include a polymer having a siloxane bond. The polymer having a siloxane bond may be polydimethylsiloxane.

[0045] The passivation layer (300) may cover the side surface and the upper surface of the first wiring (201). The passivation layer (300) may cover the side surface of the via (202). The passivation layer (300) may contact the lower surface of the second wiring (203) and expose the side surface and the upper surface of the second wiring (203). The passivation layer (300) may include a polymer having a siloxane bond. The polymer having a siloxane bond may be polydimethylsiloxane.

[0046]

[0047] FIG. 2a is a plan view of an electronic device according to some embodiments of the present invention. FIG. 2b is a cross-sectional view taken along line BB' of FIG. 2a.

[0048] Referring to FIGS. 2A and 2B, an electronic device (20) according to some embodiments of the present invention may include a substrate (100), a conductive pattern (210), and a passivation layer (310).

[0049] A substrate (100) may be provided. The description of the substrate (100) is the same as the description of the substrate (100) of FIGS. 1A and 1B.

[0050] A conductive pattern (210) may be arranged on a substrate (100). The conductive pattern (210) may include a polymer having a siloxane bond and silver (Ag) particles. The polymer having a siloxane bond may be polydimethylsiloxane. The silver particles may be silver nanoflakes.

[0051]

[0052] The conductive pattern (210) may include a first wiring (211), a first via (212), a second wiring (213), a second via (214), and a third wiring (215). The first wiring (211) may be disposed on the substrate (100). The first via (212) may be disposed on the first wiring (211). The second wiring (213) may be disposed on the first via (212). The second via (214) may be disposed on the second wiring (213). The third wiring (215) may be disposed on the second via (214).

[0053] The first wiring (211), the first via (212), the second wiring (213), the second via (214), and the third wiring (215) may each include a polymer having a siloxane bond and silver (Ag) particles. The polymer having a siloxane bond may be polydimethylsiloxane. The silver particles may be silver nanoflakes. The composition ratios of the polymer having a siloxane bond and the silver particles in the first via (212) and the second wiring (213) may be the same. The composition ratios of the polymer having a siloxane bond and the silver particles in the second via (214) and the third wiring (215) may be the same.

[0054] The third wire (215) may be directly or indirectly attached to the user's body. Specifically, the third wire (215) may function as a sensor electrode that measures medical information about the user's body. Alternatively, the third wire (215) may be connected to a sensor chip, and medical information about the user's body may be measured through the sensor chip.

[0055]

[0056] A passivation layer (310) may be disposed on the substrate (100). The passivation layer (310) may include a polymer having a siloxane bond. The polymer having a siloxane bond may be polydimethylsiloxane.

[0057] The passivation layer (310) may include a first passivation sublayer (311) and a second passivation sublayer (312). The first passivation sublayer (311) may be disposed on the substrate (100) and may cover the side surface and the upper surface of the first wiring (211). The first passivation sublayer (311) may cover the side surface of the first via (212). The first passivation sublayer (311) may be in contact with the lower surface of the second wiring (213) and the lower surface of the second passivation sublayer (312).

[0058] A second passivation sublayer (312) may be disposed on the first passivation sublayer (311). The second passivation sublayer (312) may cover the side surface and the top surface of the second wiring (213). The second passivation sublayer (312) may cover the side surface of the second via (214). The second passivation sublayer (312) may be in contact with the bottom surface of the third wiring (215) and may expose the side surface and the top surface of the third wiring (315).

[0059] The first and second passivation sublayers (311, 312) may each include a polymer having a siloxane bond. The polymer having a siloxane bond may be polydimethylsiloxane.

[0060]

[0061] FIGS. 3A to 3L illustrate a method for manufacturing an electronic device according to FIGS. 1A and 1B.

[0062] Referring to FIGS. 3a and 3b, a substrate (100) may be provided.

[0063]

[0064] Referring to FIGS. 3C and 3D , a first conductive material layer (261) may be formed on a substrate (100). The first conductive material layer (261) may cover an upper surface of the substrate (100). The first conductive material layer (261) may be a mixture of a polymer having a siloxane bond and silver particles. For example, the first conductive material layer (261) may be formed by spin coating.

[0065]

[0066] Referring to FIGS. 3E and 3F, a first portion (261A) of the first conductive material layer (261) may be cured to form a first wiring (201).

[0067] The first conductive material layer (261) may include a first portion (261A), which is an area where the first wiring (201) of FIG. 1B is to be formed, and a second portion (261B), which is another area. Curing the first portion (261A) may include, for example, irradiating the first portion (261A) with a first laser (410). The first laser (410) may have an infrared (IR) wavelength. The first laser (410) may have a near-infrared wavelength. The wavelength of the first laser (410) may be 800 nm to 1300 nm, or 1064 nm. The output of the first laser (410) may be 120 to 300 mW (milliwatts), 140 to 180 mW, or 160 mW. The first laser (410) may be a nanosecond pulse laser.

[0068]

[0069] Referring to FIGS. 3G and 3H , the second portion (261B) may be removed. Removing the second portion (261B) may include contacting the second portion (261B) with a solvent. For example, contacting the second portion (261B) with a solvent may include spin-coating the solvent on the upper surface of the first conductive material layer (261) of FIGS. 3E and 3F .

[0070] The solvent is sufficient as long as it dissolves a polymer having a siloxane bond, and is not limited to its type. The solubility of the cured polymer (i.e., the first portion (261A) or the first wiring (201)) in the solvent and the solubility of the uncured polymer (i.e., the second portion (261B)) in the solvent may be different from each other. The solubility of the uncured polymer (i.e., the second portion (261B)) in the solvent may be greater than the solubility of the cured polymer (i.e., the first portion (261A) or the first wiring (201)) in the solvent. For example, the solvent may include methyl isobutyl ketone.

[0071]

[0072] Referring to FIGS. 3i and 3j, a passivation material layer (301) may be formed on the substrate (100) and the first wiring (201). The passivation material layer (301) may be formed by spin coating. The passivation material layer (301) may cover the upper surface of the substrate (100), the side surface of the first wiring (201), and the upper surface of the first wiring (201). The passivation material layer (301) may include a polymer having a siloxane bond. The polymer having a siloxane bond may be polydimethylsiloxane.

[0073]

[0074] Referring to FIGS. 3k and 3l, a void (501) may be formed between the passivation material layer (301) and the first wiring (201).

[0075] The passivation material layer (301) may include a first portion (301A), which is an area where the via (202) of FIG. 1B is to be formed, and a second portion (301B), which is another area.

[0076] Forming the void (501) may include exposing the first portion (301A) of the passivation material layer (301) to a second laser (420). The second laser (420) may have an infrared (IR) wavelength. The second laser (420) may have a near-infrared wavelength. The second laser (420) may have a wavelength of 800 nm to 1300 nm, or 1064 nm. The second laser (420) may have an output power of 120 to 300 mW (milliwatts), 140 to 180 mW, or 160 mW. The second laser (420) may be a nanosecond pulse laser.

[0077] The second laser (420) may have the same wavelength as the first laser (410) of FIGS. 3E and 3F. The second laser (420) may have the same output value as the first laser (410) of FIGS. 3E and 3F.

[0078]

[0079] Referring to FIGS. 3m and 3n, a passivation layer (300) and a via hole (502) may be formed. Forming the passivation layer (300) and the via hole (502) may include removing a first portion (301A) of the passivation material layer (301).

[0080] Removing the first portion (301A) may include, for example, irradiating the first portion (301A) with a third laser (430). The third laser (430) may have a visible light wavelength. The third laser (430) may have a wavelength of 450 to 590 nm. The third laser (430) may be a femtosecond pulse laser. The first portion (301A) may be removed to form a via hole (502), and the remaining second portion (301B) may form a passivation layer (300).

[0081]

[0082] Referring to FIGS. 3o and 3p, a second conductive material layer (262) may be formed on the first wiring (201) and the passivation layer (300). The second conductive material layer (262) may cover the upper surface of the passivation layer (300) and fill the via hole (502). The second conductive material layer (262) may be a mixture of a polymer having a siloxane bond and silver particles. The polymer having a siloxane bond may be polydimethylsiloxane. The silver particles may be silver nanoflakes. For example, the second conductive material layer (262) may be formed by spin coating.

[0083]

[0084] Referring to FIGS. 3q and 3r, a first portion (262A) of the second conductive material layer (262) may be cured to form a second wiring (203), and a second portion (262B) of the second conductive material layer (262) may be cured to form a via (202).

[0085] The second conductive material layer (262) may include a first portion (262A), which is an area where the second wiring (203) of FIG. 1B is to be formed, a second portion (262B), which is an area where the via (202) is to be formed, and a third portion (262C), which is another area. For example, curing the first portion (262A) and the second portion (262B) may be performed simultaneously. Curing the first portion (262A) and the second portion (262B) may include, for example, irradiating the first portion (262A), specifically, the upper surface of the first portion (262A), with a fourth laser (440).

[0086] The fourth laser (440) may have an infrared (IR) wavelength. The fourth laser (440) may have a near-infrared wavelength. The fourth laser (440) may have a wavelength of 800 nm to 1300 nm, or 1064 nm. The fourth laser (440) may have an output power of 120 to 300 mW (milliwatts), 140 to 180 mW, or 160 mW. The fourth laser (440) may be a nanosecond pulse laser.

[0087] The fourth laser (440) may have the same wavelength as the first laser (410) of FIGS. 3E and 3F. The fourth laser (440) may have the same output value as the first laser (410) of FIGS. 3E and 3F.

[0088]

[0089] Referring again to FIGS. 1A and 1B , the third portion (262C) may be removed. Removing the third portion (262C) may include contacting the third portion (262C) with a solvent. For example, contacting the third portion (262C) with the solvent may include spin-coating the solvent onto the upper surface of the second conductive material layer (262) of FIGS. 3Q and 3R . The description of the solvent is the same as that of FIGS. 3G and 3H .

[0090]

[0091] The electronic device according to FIGS. 2a and 2b can also be manufactured using the electronic device manufacturing method according to FIGS. 1a and 1b. More specifically, after going through the manufacturing methods of FIGS. 3a to 3r described above, an electronic device including three or more layers of wiring and two or more layers of vias can be manufactured repeatedly.

[0092]

[0093] According to some embodiments of the present invention, a method for manufacturing an electronic device can increase the ease of the process by simultaneously patterning and curing a conductive material layer including polydimethylsiloxane and silver particles using an IR laser. According to some embodiments of the present invention, a method for manufacturing an electronic device can manufacture wiring and vias with high resolution. An electronic device manufactured using the method for manufacturing an electronic device according to the present invention can have high electrical conductivity and high durability. Accordingly, an electronic device satisfying high durability and high resolution and a healthcare device including the same can be manufactured.

[0094]

[0095] The electronic devices and their manufacturing methods according to some embodiments of the present invention are described below through <Comparative Examples> and <Embodimental Examples>, but the technical ideas according to the present invention are not limited thereto.

[0096]

[0097] Fig. 4a is a plan view of <Comparative Example> and <Examples 1> to <Examples 3>. Fig. 4b is a cross-sectional view taken along line DD' of Fig. 4a.

[0098] Referring to FIGS. 4a and 4b, <Comparative Example> and <Examples 1> to <Examples 3> electronic devices and their manufacturing methods are described.

[0099] <Comparative Example>

[0100] Electronic components were manufactured using a screen printing method. Specifically, the electronic components were manufactured using a stencil technique. A conductive material was manufactured by mixing 1.5 g of polydimethylsiloxane, 6 g of silver nanoflakes, and 2 ml of chloroform. Then, a shadow mask having holes was placed on the upper surface of a flat polydimethylsiloxane substrate (130) in a portion where a wiring was to be formed. The manufactured conductive material was filled into the holes of the shadow mask, and then the shadow mask was removed. Thereafter, the conductive material formed in the portion where the wiring was to be formed was thermally cured to manufacture a wiring (230), thereby manufacturing an electronic component (40) according to <Comparative Example>.

[0101]

[0102] <Example 1>

[0103] An electronic device was manufactured using a manufacturing method according to some embodiments of the present invention described above. First, a conductive material was manufactured in the same manner as in <Comparative Example>. Then, the conductive material was spin-coated on a flat polydimethylsiloxane substrate (130). Then, an infrared laser of 1064 nm and 160 mW was irradiated on the portion where the wiring was to be formed. Then, the polydimethylsiloxane in the portion where the wiring was to be formed was cured to manufacture the wiring (230). Then, methyl isobutyl ketone was spin-coated to remove the uncured conductive material, thereby manufacturing an electronic device (40) according to <Example 1>.

[0104]

[0105] <Example 2>

[0106] An electronic device was manufactured in the same manner as in <Example 1>, except that the output value of the infrared laser was 200 mW.

[0107]

[0108] <Example 3>

[0109] An electronic device was manufactured in the same manner as in <Example 1>, except that the output value of the infrared laser was 240 mW.

[0110]

[0111] In <Comparative Example> and <Examples 1> to <Examples 3>, the thickness of the wiring was designed to be 1 mm and the process was carried out.

[0112]

[0113] Fig. 5 shows the optical microscope observation results of the plane of <Comparative Example>. Fig. 6 shows the optical microscope observation results of the plane of <Example 1>. Fig. 7 shows the optical microscope observation results of the plane of <Example 2>. Fig. 8 shows the optical microscope observation results of the plane of <Example 3>.

[0114]

[0115] Referring to FIGS. 5, 6, 7, and 8, the resolution according to each process can be compared. As a result of the experiment, when the wiring was manufactured with the same wiring thickness of 1 mm, it was confirmed that <Comparative Example> had a wiring thickness of 1.1 mm, <Example 1> had a wiring thickness of 1.02 mm, <Example 2> had a wiring thickness of 1.1 mm, and <Example 3> had a wiring thickness of 1.24 mm. From this, it was confirmed that in the case of the process using an IR laser, when manufacturing an electronic device with a laser having an output value of 160 mW when the wavelength is 1064 nm, that is, <Example 1> had the best resolution.

[0116]

[0117] Figure 9 is the SEM observation result of the plane of <Example 1>.

[0118] Referring to Fig. 9, the SEM observation results of the portion where wiring exists on the upper surface of the electronic device of <Example 1> can be confirmed. As shown in Fig. 10, it can be confirmed that the electronic device was manufactured well without any portions where multiple wirings are spaced apart from each other and come into contact.

[0119]

[0120] Figure 10 shows a graph of the resistance ratio (R / R0) according to the number of expansion experiment cycles (Cycle) of <Comparative Example>, <Example 1>, <Example 2>, and <Example 3>.

[0121] Referring to Fig. 10, it can be confirmed that the resistance ratios of <Examples 1> to <Examples 3> are all lower than those of <Comparative Example>. (30% strain, 0.8 cycle / s conditions) In particular, in the case of <Example 1>, it can be confirmed that the resistance ratio is 40 or less even after 5000 cycles.

[0122]

[0123] Figure 11 shows the electrical conductivity (Conductivity, S cm) according to the strain (%) of <Comparative Example>, <Example 1>, <Example 2>, and <Example 3>. -1 ) represents the graph.

[0124] Referring to Fig. 11, it can be confirmed that <Example 1>, <Example 2>, and <Example 3> exhibit better electrical conductivity than <Comparative Example> over the entire range of strain (%).

[0125] [Table 1] shows the electrical conductivity of <Comparative Example>, <Example 1>, <Example 2>, and <Example 3> when the strain is 0%.

[0126] Electrical conductivity (Scm) -1 )<Comparative Example>2083<Example 1>5940<Example 2>3471<Example 3>3265

[0127] Figure 12 is the SEM observation result of the via holes of Figure 3i.

[0128] Referring to Fig. 12, the SEM observation results of via holes manufactured using the manufacturing method of the present invention, designed in a 50㎛ⅹ50㎛ square shape, can be confirmed. It can be confirmed that, despite the narrow spacing between the designed via holes, the via holes were manufactured well without interfering with each other using the manufacturing method of the present invention.

[0129]

[0130] Figure 13 is the result of measuring depth (㎛) according to position (㎛) along the E-E' line of Figure 12.

[0131] Referring to Fig. 13, a Z-dimensional mapping-based profile along the E-E' line of Fig. 12 can be confirmed. Through this, it can be confirmed that the depth of the via hole is also uniform, and the width of the via hole according to the depth is also manufactured uniformly.

[0132]

[0133] Figure 14 shows the electrical conductivity (Conductivity, S cm) according to the strain (%) of the electronic devices of Figures 1a and 1b, in which the via holes are 50㎛×50㎛ square in shape. -1 ) represents the graph.

[0134] Referring to FIG. 14, similar to the electronic devices of <Example 1> to <Example 3>, it can be confirmed that the electronic devices of FIG. 1a and FIG. 1b also maintain electrical conductivity above a certain level even as the strain (%) increases.

[0135]

[0136] Fig. 15 shows a graph of the resistance ratio (R / R0) according to the number of stretching experiment cycles of the electronic devices of Fig. 2a and Fig. 2b, in which the via hole is a square shape of 200㎛×200㎛.

[0137] Referring to FIG. 15, similar to the electronic devices of <Examples 1> to <Examples 3>, it can be confirmed that the resistance ratio of the electronic devices of FIGS. 2a and 2b does not increase significantly even after 1000 cycles under conditions of 30% strain and 0.5 cycle / s. Accordingly, it can be confirmed that the durability of the electronic device manufactured by the manufacturing method according to some embodiments of the present invention is good regardless of the number of wiring layers or via layers.

[0138]

[0139] While the embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical concept or essential features thereof. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. Preparing the substrate; Forming a conductive material layer on the substrate; and Including forming a wiring by patterning the above-mentioned challenging material layer, The substrate and the conductive material layer each include a polymer having a siloxane bond, The above-mentioned challenging material layer further includes silver (Ag) particles, Patterning the conductive material layer includes irradiating a first laser onto the conductive material layer, The above first laser is a method for manufacturing an electronic device having an infrared wavelength.

2. In paragraph 1, A method for manufacturing an electronic device, wherein the polymer of the substrate and the polymer of the conductive material layer are each polydimethylsiloxane.

3. In paragraph 1, A method for manufacturing an electronic device in which the above silver particles are silver nano flakes.

4. In paragraph 1, The above first laser is a method for manufacturing an electronic device having a near-infrared wavelength.

5. In paragraph 4, A method for manufacturing an electronic device, wherein the first laser has an output value of 100 to 500 mW (milliwatts).

6. In paragraph 1, A method for manufacturing an electronic device, wherein the first laser has a wavelength of 800 nm to 1300 nm.

7. In paragraph 6, A method for manufacturing an electronic device, wherein the first laser has an output value of 120 mW to 280 mW.

8. In paragraph 1, The above first laser is a method for manufacturing an electronic device having a wavelength of 1064 nm.

9. In paragraph 1, Forming a passivation layer on the substrate and the wiring; Irradiating a second laser onto a portion of the passivation layer; and Further comprising removing said part of said passivation layer, The above passivation layer comprises a polymer having a siloxane bond, The above second laser is a method for manufacturing an electronic device having an infrared wavelength.

10. In paragraph 9, A method for manufacturing an electronic device in which the second laser has the same wavelength as the first laser.

11. In paragraph 1, A method for manufacturing an electronic device in which the first laser is a nanosecond pulse laser.

12. In paragraph 1, Forming the above wiring: Irradiating a first laser onto a portion of the above-described challenging material layer; and A method for manufacturing an electronic device, comprising removing the remaining portion of the conductive material layer that is not irradiated with the first laser.

13. In paragraph 12, Removing the remaining portion of the conductive material layer comprises spin coating a solvent onto the upper surface of the conductive material layer, A method for manufacturing an electronic device in which the solvent is an organic material that dissolves a polymer having a siloxane bond of the conductive material layer.

14. Preparing the substrate; Forming a first conductive material layer on the substrate; Forming a first wiring by irradiating a first laser onto the first conductive material layer; Forming a passivation layer on the substrate and the first wiring; Forming a via hole penetrating the passivation layer and exposing the upper surface of the first wiring; Forming a second conductive material layer on the passivation layer; and Including forming a second wiring and via by irradiating a second laser on the second challenging material layer, The substrate, the first conductive material layer, the passivation layer, and the second conductive material layer each include a polymer having a siloxane bond, The first conductive material layer and the second conductive material layer each include silver particles, A method for manufacturing an electronic device, wherein the first laser and the second laser each have an infrared wavelength.

15. In paragraph 14, Forming the above via hole: forming a void between a portion of the passivation layer and the first wiring; and A method for manufacturing an electronic device, comprising removing a portion of the passivation layer.

16. In paragraph 15, Forming the void comprises irradiating a third laser onto the part, The above third laser is a method for manufacturing an electronic device having an infrared wavelength.

17. In paragraph 16, A method for manufacturing an electronic device in which the third laser has the same wavelength and output value as the first laser.

18. In paragraph 15, Removing said portion of said passivation layer comprises irradiating said portion with a fourth laser, The above fourth laser is a method for manufacturing an electronic device having a visible light wavelength.

19. In paragraph 18, The above fourth laser is a method for manufacturing an electronic device having a wavelength of 450 nm to 590 nm.

20. In paragraph 18, A method for manufacturing an electronic device in which the fourth laser is a femtosecond pulse laser.

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