High-purity gallium crystallization control method and apparatus, medium, device, program product and crystallization system

Abstract

Disclosed are a high-purity gallium crystallization control method and apparatus, a crystallization system, a computer-readable storage medium, and an electronic device. The method comprises: acquiring the current pressure at the inner bottom of a crystallization tank; determining the current mass of liquid metal gallium in the crystallization tank on the basis of the current pressure; determining the mass reduction amount of the liquid metal gallium in the crystallization tank within the current period of time on the basis of the current mass, and determining the current crystallization rate of the liquid metal gallium in the crystallization tank on the basis of the mass reduction amount; and determining whether the current crystallization rate is equal to a preset crystallization rate, and if not, controlling the temperature field in the crystallization tank on the basis of a magnitude relationship between the current crystallization rate and the preset crystallization rate.

Description

High-purity gallium crystallization control method, device, medium, equipment, program product and crystallization system Cross-reference to related applications

[0001] This application claims priority to Chinese Patent Application No. 202411276936.7, filed on September 12, 2024, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0002] The present disclosure relates to the technical field of high-purity gallium, and in particular, relates to a high-purity gallium crystallization control method, a high-purity gallium control device, a high-purity gallium crystallization system, a computer-readable storage medium, a computer program product, and an electronic device. BACKGROUND

[0003] High-purity gallium crystallization is an important process for purifying metallic gallium. The solubility of impurity elements in metallic gallium in solid and liquid states is different, so the impurity content is reduced through multiple crystallization processes to improve the purity of gallium.

[0004] Currently, during the crystallization process, the residual mass of liquid metallic gallium is mainly observed and judged by artificial observation. The temperature field is manually adjusted according to the residual mass to control the crystallization rate and crystallization speed. However, on the one hand, the accuracy of the residual mass obtained by artificial judgment is poor, resulting in poor control effect of the crystallization rate and crystallization speed; on the other hand, the number of artificial participation is large, resulting in low production efficiency. SUMMARY

[0005] Embodiments of the present disclosure provide a high-purity gallium crystallization control method, which can automatically control the crystallization speed.

[0006] Other characteristics and advantages of the present disclosure will become apparent from the following detailed description, or will be learned by practice of the present disclosure.

[0007] According to a first aspect of the present disclosure, a high-purity gallium crystallization control method is provided, applied to a crystallization tank for crystallizing liquid metallic gallium, the method comprising: acquiring a current pressure of a bottom of the crystallization tank; determining a current mass of the liquid metallic gallium in the crystallization tank according to the current pressure; determining a mass reduction amount of the liquid metallic gallium in the crystallization tank in a current time period according to the current mass, and determining a current crystallization speed of the liquid metallic gallium in the crystallization tank according to the mass reduction amount; and determining whether the current crystallization speed is equal to a preset crystallization speed, and if not, controlling a temperature field of the crystallization tank according to a size relationship between the current crystallization speed and the preset crystallization speed.

[0008] According to a second aspect of the present disclosure, a high-purity gallium control device is provided, comprising: a detection assembly configured to detect a current pressure of a bottom of the crystallization tank; a controller configured to obtain the current pressure of the bottom of the crystallization tank, determine a current mass of liquid metal gallium in the crystallization tank according to the current pressure, determine a mass reduction amount of the liquid metal gallium in the crystallization tank in a current time period according to the current mass, and determine a current crystallization speed of the liquid metal gallium in the crystallization tank according to the mass reduction amount; and an adjustment unit configured to determine whether the current crystallization speed is equal to a preset crystallization speed, and if not, control a temperature field of the crystallization tank according to a size relationship between the current crystallization speed and the preset crystallization speed.

[0009] According to a third aspect of the present disclosure, a high-purity gallium crystallization system is provided, comprising: a high-purity gallium crystallization control device according to any one of the embodiments of the second aspect of the present disclosure; a crystallization tank configured to crystallize liquid metal gallium; a stirring assembly comprising a hollow shell enclosing a first liquid medium, a driving member configured to drive the hollow shell to ascend and descend in the crystallization tank, and a first heating member configured to heat the first liquid medium to above a second preset temperature, wherein the first heating member is connected to the controller, and the second preset temperature is 30°C; and an external temperature assembly comprising an outer shell arranged outside the crystallization tank, wherein a cavity enclosing a second liquid medium is formed between the outer shell and the crystallization tank, and a cooling member configured to cool the second liquid medium to below a third preset temperature is arranged on the cavity, wherein the cooling member is connected to the controller, and the third preset temperature is 28°C.

[0010] According to a fourth aspect of the present disclosure, a computer-readable storage medium is provided, which stores a computer program comprising executable instructions, when the executable instructions are executed by a processor, the method according to any one of the embodiments of the first aspect of the present disclosure is implemented.

[0011] According to a fifth aspect of the present disclosure, an electronic device is provided, comprising: one or more processors; a memory configured to store executable instructions of the processor, when the executable instructions are executed by the one or more processors, the one or more processors implement the method according to any one of the embodiments of the first aspect of the present disclosure.

[0012] According to a sixth aspect of the present disclosure, a computer program product is provided, comprising program code, when the program product is run on a terminal device, the program code is used to make the terminal device execute the method according to any one of the embodiments of the first aspect of the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0013] The accompanying drawings, which are incorporated herein and constitute part of the specification, illustrate embodiments consistent with the present disclosure and, together with the description, further serve to explain the principles of the present disclosure. It is to be understood that the drawings are only schematic, and that they do not necessarily correspond to the precise implementation of the present disclosure. In the drawings:

[0014] FIG. 1 shows a flowchart of a high-purity gallium crystallization control method according to an embodiment of the present disclosure;

[0015] FIG. 2 shows a schematic diagram of a high-purity gallium crystallization system according to an embodiment of the present disclosure;

[0016] FIG. 3 shows a schematic diagram of a computer-readable storage medium according to an embodiment of the present disclosure; and

[0017] FIG. 4 shows a schematic diagram of a system structure of an electronic device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present disclosure will be described clearly and completely below with reference to the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only some of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of the present disclosure.

[0019] In addition, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the present disclosure. One of ordinary skill in the art, however, will recognize that the technical solutions of the present disclosure can be practiced without one or more of the specific details, or with other methods, components, devices, steps, etc. In other instances, well-known methods, devices, implementations, or operations are not shown or described in detail to avoid obscuring aspects of the present disclosure.

[0020] The block diagrams shown in the drawings are merely functional entities, and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in the form of software, or in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices.

[0021] The flowchart shown in the drawings is only an exemplary illustration, and is not necessarily required to include all the contents and operations / steps, nor is it necessarily required to be executed in the order described. For example, some operations / steps can be further broken down, and some operations / steps can be combined or partially combined, so the actual execution order can be changed according to actual conditions.

[0022] In the description of the present disclosure, it should be understood that the terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present disclosure, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0023] FIG. 1 shows a flowchart of a high-purity gallium crystallization control method according to an embodiment of the present disclosure. Referring to FIG. 1, a high-purity gallium crystallization control method is provided, which is applied to a crystallization tank for crystallizing liquid metal gallium. The high-purity gallium crystallization control method at least includes steps S1 to S4, which are described in detail as follows.

[0024] In step S1, the current pressure of the inner bottom of the crystallization tank is obtained. The inner bottom of the crystallization tank refers to the inner wall of the bottom of the crystallization tank. The current pressure refers to the pressure of the inner bottom of the crystallization tank at the current time.

[0025] In step S2, the current mass of the liquid metal gallium in the crystallization tank is determined according to the current pressure. The current mass refers to the mass of the liquid metal gallium in the crystallization tank at the current time. When the crystallization tank contains metal liquid gallium, different weights of metal liquid gallium correspond to different current pressures, i.e., the current pressure corresponds to the weight of the metal liquid gallium in the crystallization tank. Based on the corresponding relationship between the two, the current mass can be determined according to the current pressure.

[0026] In step S3, the mass reduction amount of the liquid metal gallium in the crystallization tank within the current time period is determined according to the current mass, and the current crystallization speed of the liquid metal gallium in the crystallization tank is determined according to the mass reduction amount.

[0027] In some embodiments, determining the mass reduction amount of the liquid metal gallium in the crystallization tank within the current time period according to the current mass includes determining the mass reduction amount according to the difference between the current mass at the start time of the current time period and the current mass at the end time of the current time period. In some embodiments, the current time period is a time period from 10s before the current time to the current time, the start time of the current time period is 10s before the current time, and the end time of the current time period is the current time.

[0028] In some embodiments, the determining the current crystallization speed of the liquid gallium in the crystallization tank according to the mass reduction amount comprises: determining the current crystallization speed according to a quotient of the mass reduction amount and a length of the current time period. In some embodiments, the mass reduction amount is 1.8 kg, and the length of the current time period is 10 minutes, and then the current crystallization speed is 1.8 kg / 10 min = 0.18 kg / min.

[0029] In step S4, it is determined whether the current crystallization speed is equal to a preset crystallization speed. If not, the temperature field of the crystallization tank is controlled according to a size relationship between the current crystallization speed and the preset crystallization speed. The preset crystallization speed is a desired crystallization speed.

[0030] In some embodiments, after the determining whether the current crystallization speed is equal to the preset crystallization speed, the method further comprises: if yes, keeping the temperature field of the crystallization tank unchanged.

[0031] In some embodiments, the determining the current mass of the liquid gallium in the crystallization tank according to the current pressure comprises: determining the current mass according to a target relationship and the current pressure. The target relationship is a corresponding relationship between the mass of the liquid gallium in the crystallization tank and the pressure at the bottom of the crystallization tank.

[0032] In some embodiments, before the determining the current mass according to the target relationship and the current pressure, the method further comprises: detecting sample data pairs at at least three time points during the crystallization of the liquid gallium in the crystallization tank, the sample data pair comprising a pressure sample value at the bottom of the crystallization tank and a mass sample value of the liquid gallium in the crystallization tank; and determining the target relationship according to the sample data pairs at the at least three time points. In some embodiments, the three time points are a first time, a second time and a third time. The pressure sample value is detected at the first time, the second time and the third time, respectively. Then the liquid gallium in the crystallization tank is poured out and the mass sample value of the liquid gallium is detected.

[0033] In some embodiments, the bottom of the crystallization tank is provided with a discharge pipe. When the liquid gallium in the crystallization tank is crystallized, the discharge pipe is in a closed state. The current pressure at the bottom of the crystallization tank is obtained by adjusting the discharge pipe to a closed state during the crystallization of the liquid gallium in the crystallization tank, and heating the discharge pipe to a first preset temperature. The first preset temperature is greater than 30°C; the first pressure of the liquid gallium in the discharge pipe 1 is detected at a preset position of the discharge pipe; and the current pressure is determined according to the difference between the first pressure and a preset pressure. The preset pressure is the pressure detected at the preset position of the discharge pipe when the liquid surface of the liquid gallium in the crystallization tank and the end of the discharge pipe in the crystallization tank are flush. The first preset temperature is greater than 30°C, which can avoid the crystallization of the liquid gallium in the discharge pipe, affecting the pressure detection, and on the other hand, the heat can be transferred to the upper end of the discharge pipe through heat conduction to avoid the crystallization of the liquid gallium at the upper end of the discharge pipe, affecting the pressure detection. It should be noted that the current pressure is the difference between the first pressure and the preset pressure, the preset pressure is a fixed value, and the first pressure is a variable value that changes with the crystallization process. If the liquid gallium in the discharge pipe crystallizes, the preset pressure decreases, and the current pressure is larger than the actual pressure. If the liquid gallium at the upper end of the discharge pipe crystallizes more, it may block the upper end of the discharge pipe, so that the pressure of the liquid gallium in the crystallization tank cannot be transmitted to the discharge pipe, and it is difficult to detect the pressure.

[0034] In some embodiments, the upper end of the discharge pipe is flush with the bottom of the crystallization tank, and the lower end is below the bottom of the crystallization tank.

[0035] In some embodiments, the temperature field of the crystallization tank includes a cooling temperature field outside the crystallization tank. The cooling temperature field is less than 28°C. The temperature field of the crystallization tank is controlled according to the size relationship between the current crystallization speed and the preset crystallization speed, including: if the current crystallization speed is greater than the preset crystallization speed, the temperature of the cooling temperature field is increased, i.e. the crystallization speed is too large, and the temperature of the cooling temperature field is increased to reduce the crystallization speed; if the current crystallization speed is less than the preset crystallization speed, the temperature of the cooling temperature field is reduced, i.e. the crystallization speed is too small, and the temperature of the cooling temperature field is reduced to increase the crystallization speed.

[0036] In some embodiments, after determining the current mass of the liquid gallium in the crystallization tank according to the current pressure, the method further comprises: determining a current crystallization rate according to the current mass and a preset mass, the preset mass being the mass of the liquid gallium in the crystallization tank when the liquid gallium is not crystallized; and determining whether the current crystallization rate is equal to a preset crystallization rate, and if yes, stopping the crystallization of the liquid gallium in the crystallization tank. The preset mass can be understood as the initial weight of the liquid gallium added into the crystallization tank, and the preset crystallization rate is a desired crystallization rate.

[0037] According to a second aspect of the present disclosure, a high-purity gallium control device is provided, comprising:

[0038] a detection component configured to detect a current pressure at the bottom of the crystallization tank;

[0039] a controller configured to acquire the current pressure at the bottom of the crystallization tank, determine a current mass of the liquid gallium in the crystallization tank according to the current pressure, determine a mass reduction amount of the liquid gallium in the crystallization tank in a current time period according to the current mass, and determine a current crystallization speed of the liquid gallium in the crystallization tank according to the mass reduction amount; and

[0040] an adjustment unit configured to determine whether the current crystallization speed is equal to a preset crystallization speed, and if not, control a temperature field of the crystallization tank according to a size relationship between the current crystallization speed and the preset crystallization speed. The controller can be a PLC controller or an industrial computer.

[0041] FIG. 2 shows a schematic diagram of a high-purity gallium crystallization system according to an embodiment of the present disclosure. The correspondence between the reference numerals and the component names in FIG. 2 is as follows: 1 - second temperature sensor, 2 - third temperature sensor, 3 - pressure sensor, 4 - second heating element, 5 - discharge valve, 6 - discharge pipe, 7 - support, 8 - chamber, 9 - water outlet valve, 10 - water inlet valve, 11 - crystallization tank, 12 - hollow shell, 13 - heating rod, 14 - first temperature sensor, 15 - driving element, 16 - controller, 17 - frame. As shown in FIG. 2, according to the third aspect of the present disclosure, a high-purity gallium crystallization system is provided, comprising: a high-purity gallium crystallization control device according to any one of the embodiments of the second aspect of the present disclosure; a crystallization tank 11 for crystallizing liquid metallic gallium; a stirring assembly comprising a closed hollow shell containing a first liquid medium, a driving element 15 for driving the hollow shell to ascend and descend in the crystallization tank 11, and a first heating element for heating the first liquid medium to above a second preset temperature, wherein the first heating element is connected to the controller 16. The second preset temperature is 30°C; an external temperature assembly comprising an external shell arranged outside the crystallization tank 11, wherein a chamber 8 for containing a second liquid medium is formed between the external shell and the crystallization tank 11, and a cooling element for cooling the second liquid medium to below a third preset temperature is arranged on the chamber 8, wherein the cooling element is connected to the controller 16, and the third preset temperature is 28°C. The first liquid medium and the second liquid medium can be water. The external temperature assembly is configured to provide the cooling temperature field.

[0042] In some embodiments, the driving element 15 is a pneumatic cylinder, and can also be a hydraulic cylinder.

[0043] In some embodiments, the bottom of the crystallization tank 11 is provided with a discharge pipe 6. The discharge pipe 6 is provided with a discharge valve 5. The discharge valve 5 is located below the bottom of the crystallization tank 11. The upper end of the discharge pipe 6 is flush with the inner bottom of the crystallization tank 11, and the lower end of the discharge pipe 6 is located below the bottom of the crystallization tank 11. The detection assembly comprises a pressure sensor 3 arranged on the discharge pipe 6. The pressure sensor 3 is connected to the controller 16. The pressure sensor 3 is located between the discharge valve 5 and the upper end of the discharge pipe 6.

[0044] In some embodiments, the discharge pipe 6 comprises: a main pipe, the upper end of which is connected to the bottom of the crystallization tank 11, and the lower end of which is connected to two branch pipes. The discharge valve 5 is arranged on one of the two branch pipes. The pressure sensor 3 is arranged on the other branch pipe.

[0045] In some embodiments, the first heating element is a heating rod 13 arranged on the hollow shell. The heating rod 13 is in contact with the first liquid medium in the hollow shell. The heating rod 13 is connected to the controller 16.

[0046] In some embodiments, the system further comprises a first temperature sensor 14 disposed on the hollow shell. A probe of the first temperature sensor 14 is in contact with the first liquid medium. The first temperature sensor 14 is connected to the controller 16. The controller 16 controls the heating rod 13 according to a detection result of the first temperature sensor 14 to control the temperature of the first liquid medium to be above a second preset temperature.

[0047] In some embodiments, the second liquid medium is water. The cooling device comprises a water chiller, a water inlet pipe and a water outlet pipe. The water inlet pipe is provided with a water inlet valve 10. The water outlet pipe is provided with a water outlet valve 9. The water outlet valve 9 and the water inlet valve 10 are connected to the controller 16. The water inlet pipe is located above the water outlet pipe. The water inlet pipe and the water outlet pipe are disposed on the shell. One end of the water inlet pipe is connected to the chamber 8 and the other end is connected to an outlet of the water chiller. One end of the water outlet pipe is connected to the chamber 8 and the other end is connected to an inlet of the water chiller. The water chiller sends cold water into the chamber 8 through the water inlet pipe. The water in the chamber 8 absorbs heat and is sent into the water chiller through the water outlet pipe for cooling, and the cycle is repeated.

[0048] In some embodiments, the system further comprises a second temperature sensor 1 disposed on the shell. A probe of the second temperature sensor 1 is in contact with the second liquid medium. The second temperature sensor 1 is connected to the controller 16. The controller 16 controls the water inlet valve 10 and the water outlet valve 9 according to a detection result of the second temperature sensor 1 to control the temperature of the second liquid medium to be below a third preset temperature.

[0049] In some embodiments, the system further comprises a third temperature sensor 2 disposed on the discharge pipe 6. The third temperature sensor 2 is located between the discharge valve 5 and the upper end of the discharge pipe 6. The third temperature sensor 2 is connected to the controller 16.

[0050] In some embodiments, the system further comprises a bracket 7 for mounting the shell and a frame 17 for mounting the bracket 7.

[0051] Based on the same inventive concept, according to a fourth aspect of the present disclosure, the present disclosure further provides a computer-readable storage medium comprising a computer program stored thereon, the computer program comprising executable instructions which, when executed by a processor, implement the above-mentioned high-purity gallium crystallization control method.

[0052] In some possible implementation manners, various aspects of the present disclosure can also be implemented as a program product in a form of a program code, which is used for causing an end device to perform the steps described in the above-mentioned implementation manners according to various exemplary implementation manners of the present disclosure when the program product is run on the end device.

[0053] Referring to FIG. 3, a program product 200 for implementing the above-mentioned method according to the implementation manners of the present disclosure is described, which can adopt a portable compact disc read-only memory (CD-ROM) and include a program code, and can be run on an end device, such as a personal computer. However, the program product of the present disclosure is not limited to this, and in the present disclosure, the readable storage medium can be any tangible medium containing or storing a program, which can be used by or in combination with an instruction execution system, device or apparatus.

[0054] The program product can adopt any combination of one or more readable media. The readable medium can be a readable signal medium or a readable storage medium. The readable storage medium can be, for example but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or apparatus, or any combination of the above. More specific examples (non-exhaustive list) of the readable storage medium include an electrical connection having one or more wires, a portable disc, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0055] The computer readable signal medium can include a data signal propagated in a baseband or as a carrier wave in a propagated data signal, in which a readable program code is borne. Such a propagated data signal can adopt various forms, including but not limited to an electromagnetic signal, an optical signal or any suitable combination of the above. The readable signal medium can also be any readable medium other than the readable storage medium, which can send, propagate or transmit a program for use by or in combination with an instruction execution system, device or apparatus.

[0056] The program code contained on the readable medium can be transmitted by any suitable medium, including but not limited to wireless, wired, optical cable, RF, etc., or any suitable combination of the above.

[0057] Program code to implement an operation of the present disclosure can be written in any combination of one or more programming languages, including an object oriented programming language such as Java, C++, or the like, and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code can execute entirely on the user's computing device, partly on the user's device, as a stand-alone software package, partly on the user's device and partly on a remote computing device or entirely on the remote computing device or server. In the latter scenario, the remote computing device can be connected to the user's device through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection can be made to an external computing device, such as through the Internet using an Internet Service Provider.

[0058] According to a fifth aspect of the present disclosure, the present disclosure further provides an electronic device capable of implementing the method described above.

[0059] Those skilled in the art can understand that various aspects of the present disclosure can be implemented as a system, a method or a program product. Therefore, various aspects of the present disclosure can be embodied as a whole hardware implementation, a whole software implementation (including firmware, microcode, etc.), or a combination of hardware and software aspects, which can be collectively referred to as "circuitry", "module" or "system" herein.

[0060] The electronic device 300 according to some embodiments of the present disclosure will be described below with reference to FIG. 4. The electronic device 300 shown in FIG. 4 is merely an example and should not be taken as limiting the functionality and use of the embodiments of the present disclosure.

[0061] As shown in FIG. 4, the electronic device 300 is in the form of a general computing device. The components of the electronic device 300 can include, but are not limited to, the at least one processing unit 310 described above, the at least one storage unit 320 described above, and a bus 330 connecting different system components, including the storage unit 320 and the processing unit 310.

[0062] In some embodiments, the storage unit stores program code which can be executed by the processing unit 310, so that the processing unit 310 performs the steps described in the above embodiments according to various exemplary embodiments of the present disclosure.

[0063] The storage unit 320 can include a readable medium in the form of a volatile storage unit, such as a random access memory (RAM) 321 and / or a cache memory 322, and can further include a read-only memory (ROM) 323.

[0064] The storage unit 320 can also include a number of program modules 325 that are stored in the memory 322, including but not limited to an operating system, one or more application programs, other program modules, and program data, each of which or a combination of which can include implementation of a network environment.

[0065] The bus 330 can represent one or more of several types of bus structures, including a storage unit bus or bus controller, a peripheral bus, a graphics acceleration port, a processing unit bus, or a local bus using any of a variety of bus architectures.

[0066] The electronic device 300 can also communicate with one or more external devices 400 such as a keyboard, a pointing device, a Bluetooth device, etc.; other devices that enable a user to interact with the electronic device 300; and / or one or more devices that enable the electronic device 300 to communicate with one or more other computing devices. Such communication can occur via the input / output (I / O) interface 350. Still yet, the electronic device 300 can communicate with one or more networks, such as a local area network (LAN), a wide area network (WAN), and / or the Internet, through a network adapter 360. As depicted, the network adapter 360 communicates with the other components of the electronic device 300 via the bus 330. It should be appreciated that the electronic device 300 can be a part of a larger system, including but not limited to a server bank, a web-based service, and the like.

[0067] According to the technical scheme of some embodiments of the present disclosure, at least the following beneficial effects can be obtained: the current crystallization speed can be determined according to the current pressure, and when the current crystallization speed is not equal to the preset crystallization speed, the temperature field of the crystallization tank is controlled according to the size relationship between the current crystallization speed and the preset crystallization speed, so as to realize automatic control of the crystallization speed.

[0068] The functions described herein can be implemented in hardware, software executed by a processor, firmware, or any combination thereof. If implemented in software executed by a processor, the functions can be stored on or transferred over as one or more instructions or code on a computer-readable medium. Other examples and implementations are within the scope and spirit of the disclosure and appended claims. In some embodiments, due to the nature of software, functions described above can be implemented using software executed by a processor, hardware, firmware, hardwiring, or combinations of any of these. Also, each of the functions can be implemented as a separate function or combined as a single function in any combination or sub-combination.

[0069] In several embodiments provided in the present disclosure, it should be understood that the disclosed technology can be implemented in other ways. Among them, the above-mentioned device embodiments are only schematic, for example, the division of the units can be a logical function division, and actual implementation can have another division manner, for example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the displayed or discussed each other can be through some interface, indirect coupling or communication connection between units or modules, and can be electrical or other forms.

[0070] The units described as separate components can or can not be physically separate, and the components of the control device can or can not be physical units, that is, they can be located in one place, or they can be distributed on multiple units. Part or all of the units can be selected according to actual needs to achieve the purpose of the embodiment.

[0071] The integrated unit, if implemented in the form of a software function unit and sold or used as an independent product, can be stored in a computer readable storage medium. Based on this understanding, the technical solutions of the present disclosure essentially or the part that contributes to the prior art or the whole or part of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium, including a plurality of instructions to make a computer device (which can be a personal computer, a server or a network device, etc.) execute all or part of the steps of the method described in various embodiments of the present disclosure. The foregoing storage medium includes: a U disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a mobile hard disk, a magnetic disk or an optical disk, and various media that can store program codes.

[0072] The above merely provides an example of the present disclosure, and is not intended to limit the present disclosure. For those skilled in the art, the present disclosure can have various modifications and variations. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present disclosure shall fall into the scope of claims of the present disclosure.

Claims

1. A method for controlling crystallization of high-purity gallium, applied to a crystallization tank for crystallizing liquid gallium, the method comprising: obtaining a current pressure at a bottom of the crystallization tank; determining a current mass of the liquid gallium in the crystallization tank according to the current pressure; determining a mass reduction of the liquid gallium in the crystallization tank in a current time period according to the current mass, and determining a current crystallization rate of the liquid gallium in the crystallization tank according to the mass reduction; and determining whether the current crystallization rate is equal to a preset crystallization rate, and if not, controlling a temperature field of the crystallization tank according to a size relationship between the current crystallization rate and the preset crystallization rate. The determination of the current mass of the liquid gallium in the crystallization tank according to the current pressure comprises: determining the current mass according to a target relationship and the current pressure, wherein the target relationship is a corresponding relationship between the mass of the liquid gallium in the crystallization tank and the pressure at the bottom of the crystallization tank. Before the determination of the current mass according to the target relationship and the current pressure, the method further comprises: detecting sample data pairs at at least three time points during the crystallization of the liquid gallium in the crystallization tank, wherein each sample data pair comprises a pressure sample value at the bottom of the crystallization tank and a mass sample value of the liquid gallium in the crystallization tank; and determining the target relationship according to the sample data pairs at the at least three time points. The bottom of the crystallization tank is provided with a discharge pipe, and the discharge pipe is in a closed state during the crystallization of the liquid gallium in the crystallization tank, and the obtaining of the current pressure at the bottom of the crystallization tank comprises: adjusting the discharge pipe to the closed state and heating the discharge pipe to a first preset temperature during the crystallization of the liquid gallium in the crystallization tank, wherein the first preset temperature is greater than 30℃; detecting a first pressure of the liquid gallium in the discharge pipe at a preset position of the discharge pipe; and determining the current pressure according to a difference between the first pressure and a preset pressure, wherein the preset pressure is a pressure detected at the preset position of the discharge pipe when a liquid surface of the liquid gallium in the crystallization tank and an end portion of the discharge pipe located in the crystallization tank are flush. The temperature field of the crystallization tank comprises a cooling temperature field outside the crystallization tank, and the cooling temperature field is less than 28℃, and the control of the temperature field of the crystallization tank according to the size relationship between the current crystallization rate and the preset crystallization rate comprises: increasing the temperature of the cooling temperature field if the current crystallization rate is greater than the preset crystallization rate; and decreasing the temperature of the cooling temperature field if the current crystallization rate is less than the preset crystallization rate. After the determination of the current mass of the liquid gallium in the crystallization tank according to the current pressure, the method further comprises: determining a current crystallization rate according to the current mass and a preset mass, wherein the preset mass is a mass of the liquid gallium in the crystallization tank when the liquid gallium in the crystallization tank is not crystallized; and determining whether the current crystallization rate is equal to a preset crystallization rate, and if so, stopping the crystallization of the liquid gallium in the crystallization tank.

2. The high-purity gallium crystallization control method according to claim 1, wherein ​ ​ 3. The high-purity gallium crystallization control method according to claim 2, wherein ​ ​ ​ 4. The high purity gallium crystallization control method of claim 1, wherein, ​ ​ ​ ​ 5. The method of claim 1, wherein the high purity gallium crystal is controlled by the steps of: ​ ​ ​ 6. The method of claim 1, wherein the high purity gallium crystal is controlled by the steps of: ​ ​ ​ 7. A high-purity gallium control device, comprising: a detection component configured to detect a current pressure at a bottom of a crystallization tank; a controller configured to obtain the current pressure at the bottom of the crystallization tank, determine a current mass of liquid metal gallium in the crystallization tank based on the current pressure, determine a mass reduction of the liquid metal gallium in the crystallization tank in a current time period based on the current mass, and determine a current crystallization speed of the liquid metal gallium in the crystallization tank based on the mass reduction; and an adjustment unit configured to determine whether the current crystallization speed is equal to a preset crystallization speed, and if not, control a temperature field of the crystallization tank based on a size relationship between the current crystallization speed and the preset crystallization speed.

8. A high-purity gallium crystallization system, comprising: the high-purity gallium crystallization control device of claim 7; a crystallization tank configured to crystallize liquid metal gallium; a stirring component comprising a hollow shell enclosing a first liquid medium, a driving member configured to drive the hollow shell to ascend and descend in the crystallization tank, and a first heating member configured to heat the first liquid medium to a second preset temperature above 30°C, wherein the first heating member is connected to the controller; and an external temperature component comprising an outer shell disposed outside the crystallization tank, wherein a cavity enclosing a second liquid medium is formed between the outer shell and the crystallization tank, and a cooling member configured to cool the second liquid medium to a third preset temperature below 28°C is disposed on the cavity, wherein the cooling member is connected to the controller.

9. A computer-readable storage medium comprising a computer program stored thereon, the computer program comprising executable instructions which, when executed by a processor, implement the method of any one of claims 1-6. one or more processors; and a memory configured to store executable instructions executable by the one or more processors, which, when executed by the one or more processors, cause the one or more processors to implement the method of any one of claims 1-6.

10. An electronic device, comprising:

11. A computer program product comprising program code configured to cause an end device to perform the method of any one of claims 1-6 when the computer program product is run on the end device. ​ ​ ​

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