Process chamber and device for vapor phase deposition of a semiconductor layer on a substrate

Abstract

The invention relates to a process chamber (3) for the vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate (1), comprising a carrier system (2) for accommodating several substrates (1) simultaneously, wherein the carrier system (2) is movable for transportation of the several substrates (1) simultaneously through the process chamber (3), a device for introducing process gases (6) into the process chamber (3), and a stationary heating system (4) for radiantly heating the carrier system (2) and / or substrates (1) arranged on the carrier system (2). The invention is characterized by the feature that the heating system (2) has a heating surface (5) which essentially only faces one surface side of the carrier system (2) and / or substrates (1), in particular the rear side. The invention also relates to a device for vapor phase deposition of a semiconductor layer, in particular a silicon layer on a substrate (1).

Description

[0001] Title

[0002] Process chamber and device for vapor phase deposition of a semiconductor layer on a substrate

[0003] Description

[0004] The invention relates to a process chamber for the vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate, comprising a carrier system for accommodating several substrates simultaneously, a device for introducing process gases into the process chamber, and a heating system for radiantly heating the carrier system and / or substrates arranged on the carrier system. The invention relates further to a device for vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate according to claim 18.

[0005] For large-area electronic components, for example large-area lighting elements or photovoltaic solar cells, but also for mass-produced products, for example semiconductor diodes, there is a need for inexpensive semiconductor wafers having high crystal quality, since, in the case of such components, the material costs of the semiconductor wafer constitute a significant proportion of the costs of the overall product. There are known methods of producing semiconductor wafers wherein semiconductor wafers are produced from silicon blocks ("ingots") by means of sawing methods. In this way, it is possible to produce high- quality, especially monocrystalline, semiconductor wafers. However, production costs are high, one reason for which is the loss of material in the sawing of the silicon blocks.

[0006] Therefore, alternative methods have been developed, in which a wafer layer is deposited on a substrate and then detached from the seed substrate. The wafer layer detached thus constitutes the semiconductor wafer for production of the electronic component. Substrate carriers are used for accommodating substrates, for example for depositing semiconductor layers on a seed substrate: The seed substrates are arranged on the substrate carrier. The substrate carrier is then brought into a process position by means of a process chamber guide in a process chamber.

[0007] 34652-P-WO Ga / su 11.09.2025 US 2018 / 0245217 Al discloses a high throughput deposition apparatus comprising a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates, which are configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber. In the process chamber, the substrates are heated on both sides.

[0008] For the growth of the semiconductor layer, uniform heating of the substrates is essential. Heating of multiple substrates on a carrier according to the state of the art has the disadvantage, that the temperature and heat distribution on the surface side of the substrates, on which the semiconductor layer should be deposited, is not that uniform as desired.

[0009] Furthermore, it is even more difficult to set the right temperature and / or adjust the right temperature during the process. In particular, the heating system itself has an influence on the temperature distribution as well as the carrier and the holding elements for the substrate on the substrate carrier.

[0010] The present invention is therefore based on the objective of providing a simple and quick possibility to enhance the large area uniformity of heat distribution on the substrate. Furthermore, it is an objective of the present invention to adjust the heating of the substrate specifically.

[0011] These and further objectives are achieved by a process chamber for the vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate in accordance with claim 1 and a device for vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate in accordance with claim 18.

[0012] Advantageous embodiments for the process chamber are described in claims 2 to 17.

[0013] The process chamber for the vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate comprises a carrier system for accommodating several substrates

[0014] 34652-P-WO Ga / su 11.09.2025 simultaneously, wherein the carrier system is movable for transportation of the several substrates (1) simultaneously through the process chamber, a device for introducing process gases into the process chamber, and a heating system for radiantly heating the carrier system and / or substrates arranged on the carrier system.

[0015] The invention is characterized by the features that the heating system has a heating surface which essentially only faces one surface side of the carrier system and / or the substrates, in particular the rear side.

[0016] Heating the substrates only from one side, in particular the rear side, has the advantage that the heat distribution could be adjusted in a better way as only one side influences the heating and heat distribution of the substrates on the carrier system.

[0017] In a preferred embodiment, the heating surface is heated directly, in particular by means of resistance heating. Direct heating of the heating surface is very efficient and offers a homogeneous heat distribution over the whole surface. In particular for resistance heating, the heating surface has to be electrically conductive and temperature resistant, which allows the use of a wide range of materials. Furthermore, there are no further forces like Lorentz force, which influence the heating surface, in particular mechanically.

[0018] Another preferred embodiment of the process chamber is characterized in that the heating surface is heated inductively, wherein at least one induction coil being provided for the heating surface. By means of inductive heating, in particular induction coils, the heating could be adjusted very quick compared to other methods like resistance heating. By adjusting the current for the at least one induction coil, the heating of the heating surface is adjusted immediately.

[0019] By preference, the at least one induction coil is separated only by a short distance from the heating surface. This invention describes embodiments to avoid electrical short circuiting. In particular, the heating surface is made of graphite, which has a good coupling in the inductive field and therefore heats up easily.

[0020] 34652-P-WO Ga / su 11.09.2025 In a preferred embodiment, the heating surface is formed from at least two heating plate elements arranged vertically one above the other and / or horizontally next to one another. Preferably, the heating plate elements are arranged matrix-like next to each other. It is further preferred, that heating surface is formed by more than two heating plate elements. The heating surface could be made of several heating plate elements, which is also more cost effective.

[0021] Another preferred embodiment is characterized in that one induction coil is assigned to a heating plate element or a group of heating plate elements. A one-to-one allocation of induction coil and heating plate elements allows an effective control of each of the heating plate elements of the heating surface, so that the heating for each heating plate could be adjusted individually.

[0022] As controlling a large number of heating plate elements could be challenging, one induction coil could be assigned to a group of heating plate elements, wherein the group of heating plate elements has a smaller quantity of heating plate elements compared to the total number of heating plate elements. Furthermore, the overall heating power could be higher by having several inductions coils assigned to one heating plate element or a group of heating plate elements, in particular at the edges of the heating plate elements. As induction coils cannot be designed to have designated, in particular individually adjustable areas with higher and lower power, a plurality of induction coils assigned to a plurality of heating plate elements allow an adjustment of the heating for different areas.

[0023] In another embodiment, one induction coil is assigned to all heating plate elements, so that one induction coil serves as heating device for all heating plate elements. Having only few induction coils or at least one induction coil simplifies the control of the heating.

[0024] According to a further preferred embodiment, different distances and / or angles of the heating plate elements to the at least one induction coil are adjustable for each heating plate element or a group of heating plate elements. The adjustment of distance and / or the angle of the heating plate elements to the at least one induction coil offers the possibility of a fine tuning of local heating power by controlling inductive coupling. By adjusting the distance and / or the

[0025] 34652-P-WO Ga / su 11.09.2025 angle of the heating plate elements to the at least one induction coil, a certain temperature profile could be achieved, in particular a homogeneous temperature over the whole heating plate element or a group of heating plate elements or the complete heating surface. Also a controlled non-uniform temperature profile over the whole heating plate element or group of heating plate elements can be adjusted, for example to compensate for non-uniform heat dissipation from the carrier due to reaction chamber design or for fast heat up of substrates upon entering the processing chamber compared to maintaining temperature in later positions in case the carrier is moving through the process chamber in a continuous process. As inductive heating of a surface is sensitive to the distance between the surface and the inductive coil, the heating of the heating plate elements could be set very precisely.

[0026] The adjustment of the distances and / or angles of the heating plate elements to the at least one induction coil could be done mechanically or electronically. In particular, each heating plate element or a group of heating plate elements can have its own mechanism or adjustment unit to adjust the distance and / or the angle of the heating plate elements to the at least one induction coil. The mechanism or adjustment unit for the adjustment can comprise for example space bolts or screws and / or an electric motor for moving the bolts or screws.

[0027] In another preferred embodiment, the distance between the heating plate elements and the at least one induction coil is adjustable in the range from 0 mm to 50 mm, preferably in the range from 3 mm to 30 mm, more preferably in the range from 5 mm to 15 mm.

[0028] Preferentially, the heating plate elements are arranged on the at least one induction coil and / or a part of the process chamber by means of mounting elements made of a material without an electromagnetically coupling, e.g. ceramic material or quartz. Preferably, the part of the process chamber can be an insulating cover between the heating plate elements and the at least one induction coil and / or a frame or housing of the process chamber. This allows a safe and stable mounting of the heating plate elements, wherein at the same time, the heating plate elements can be exchanged on a modular basis. Making the mounting elements of a material without an electromagnetic coupling reduces temperature effects at the area of coupling through the holding elements. The temperature adjustment and the temperature distribution could be adjusted easier. According to another preferred embodiment, the

[0029] 34652-P-WO Ga / su 11.09.2025 mounting elements are made of the same material as the heating plate elements. The mounting elements can be built by a frame, in which the heating plate elements are inserted or can be built by mounting bars or similar elements, on which the heating plate elements are placed and mounted. Preferentially, the mounting elements are designed to take the thermal expansion of the heating plate elements into account.

[0030] Another preferred embodiment is characterized in that the heating plate elements have a thickness profile, in particular that the heating plate element has partly a greater thickness. The thickness profile of the heating plate elements has also an influence on the heat distribution and temperature of the heating plate elements. In particular, the heating plate elements have the thickness profile on the side facing the at least one induction coil, wherein the side facing the substrates is preferably flat without a thickness profile.

[0031] In a preferred embodiment, an insulating cover is arranged between the heating plate elements and the at least one induction coil, in particular for thermal and / or electrical insulation of the at least one induction coil with respect to the heating surface or the heating plate elements. The insulating cover prevents shortcuts and allows very short distances between the heating plate elements and the at least one induction coil, which enhances the overall efficiency of heating and could also enhance the controllability of heating.

[0032] Preferentially, the insulation cover completely separates the at least one induction coil from an interior of the process chamber. Through the separation of the induction coil from the interior of the process chamber, the induction coil is shielded from a chemical aggressive and reactive environment.

[0033] Alternatively or preferably in addition, the heating plate elements are mounted onto the insulating cover.

[0034] Preferably, the heating surface, in particular the heating plate elements, is arranged in an insulating receptacle, in particular made of a semiconductor material, for example silicon carbide. This allows a good insulation of the heating plate elements from the surrounding area within the process chamber.

[0035] 34652-P-WO Ga / su 11.09.2025 Alternatively or preferably in addition, the heating surface, in particular the heating plate elements, is formed from coated graphite. Coated graphite has a high electromagnetically coupling and is very stable in different environments.

[0036] In a preferred embodiment, the insulating cover is formed from quartz glass or a ceramic material. Quartz glass or ceramic materials like Alumina (AI2O3) have a high shielding effect against electrical shorts.

[0037] Preferably, the carrier system may consist of a planar plate with structures to support and / or restrain the substrates, e.g. pins and / or bars. In a further preferred embodiment, the carrier system has a grid-like structure, preferably with recesses where carrier material is thinner forming pockets to accommodate the substrates. In another preferred embodiment the gridlike structure of the carrier has cut-outs leaving the rear side of substrates except the edges free from a support by the carrier system to be radiantly heated by heating elements. The heating of the substrates and the overall efficiency of the heating system is enhanced as the energy of the radiantly heating is directly absorbed by the substrates. Another advantage of this embodiment is that a wafer bow, which is common during heating from one side, is not leading to parts of the substrate losing contact to carrier and therefore does not result in an inhomogeneous heat transfer from the carrier to the substrate.

[0038] According to the invention, the carrier system is movable for transportation of the several substrates simultaneously through the process chamber. In particular, the substrates are transported through the process chamber in a continuous manner.

[0039] Preferably, the heating system is a stationery heating system.

[0040] In a further preferred embodiment, the carrier system and / or the heating surface of the heating system are tilted towards a vertical plane, in particular by an angle between 0° and 20°, preferably by an angle between 3° and 10°.

[0041] 34652-P-WO Ga / su 11.09.2025 Preferentially, the process chamber comprises means for monitoring the temperature of the substrates and / or the heating system, in particular the heating surface. More preferably, the means for monitoring the temperature are configured to monitor individual heating plate elements. Means for monitoring the temperature of the substrates and / or the heating system could be temperature sensor, temperature sensitive elements like resistors or thermal cameras.

[0042] In another further preferred embodiment, the process chamber comprises a control device which is designed to control the movement of the carrier system, the device for introducing process gases and / or the heating system. In particular, the control device is also in connection with the means for monitoring the temperature, in particular for automatically adjusting the heating system. The temperature could be adjusted very quick for getting optimum results of the temperature and temperature distribution of the heating surface.

[0043] Alternatively or in addition, a plurality of induction coils is provided for the heating surface, wherein the induction coils being controllable individually or in groups by means of the control device. The heating can be adjusted more sensitive for particular regions, in particular for the edges of the heating surface. At the edges of the heating surface, a higher amount of energy is needed to achieve a certain temperature and in particular a uniform temperature compared to a center of the heating surface.

[0044] Preferably, the distance of the heating plate elements is adjustable mechanically or electronically by the control device, in particular without opening the process chamber and / or during a deposition process. During the process of deposition, an adjustment could be done very easily. This allows to react very quick on temperature differences and unwanted deviations in heating and heating and temperature distribution.

[0045] The objective of the invention is also solved by a device for vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate, comprising a process chamber or a preferred embodiment of the process chamber as mentioned above. The device for vapor phase deposition further comprises one or more sources for the necessary process gases, a pumping system and preferably means for monitoring the deposition process.

[0046] 34652-P-WO Ga / su 11.09.2025 The advantages of the invention are explained by way of example with reference to embodiments and the figures.

[0047] Figure 1 shows a first embodiment of a process chamber with a resistance heating for the heating surface;

[0048] Figure 2a) shows a second embodiment of a process chamber with an inductive heating for the heating surface;

[0049] Figure 2b) shows an excerpt from figure 2a);

[0050] Figure 3 shows an excerpt of a view on the heating surface and heating system; and

[0051] Figures 4a) and 4b) show an embodiment of the carrier system in a front view and a section view.

[0052] In figure 1, a first embodiment for process chamber 3 is shown. The process chamber 3 comprises a carrier system 1, on which several substrates 1 are mounted on a front side 2a of the carrier system 2. With the carrier system 1, the substrates 1 are accommodated in or transported continuously through the process chamber 3. Furthermore, the substrates 1 are exposed to process gases 6 within the process chamber 3, wherein the process gases 6 are fed into the process chamber via at least one inlet. The process chamber 3 further comprises a stationery heating system 4 with a heating surface 5, which faces the rear side 2b of the carrier system 2. So only one surface side of the substrates 1 on the carrier system 2 moving along the heating surface 5 is heated radiantly by the heating surface 5. There are different possibilities to achieve a heating by radiation. In figure 1, the heating surface 5 is heated by resistance heating, which forms a kind of direct heating of the heating surface 5. For resistance heating, the heating surface 5 is made of a material like graphite or SiC. Direct resistance heating is very efficient and offers a homogeneous heat distribution over the whole heating surface 5.

[0053] The process chamber 3 with its heating system 4 further comprises a sensor 13 for measuring the temperature and temperature distribution of the heating surface 5. Alternatively or in addition, there is a sensor 13' for measuring the temperature and temperature distribution of the surface of the substrates 1 on the carrier system 2. Through a control device 12, the

[0054] 34652-P-WO Ga / su 11.09.2025 current input for the resistance heating of the heating surface 5 or heating surfaces 5 could be adjusted in dependence of the measurement of the sensors 13, 13'.

[0055] The heating surface 5 consists in this case of one heating plate element 9. However, the heating surface 5 could consist of more than one heating plate element 9, which can be electrically connected together or which can be controlled individually by the control device 12.

[0056] A further embodiment of the process chamber 3 is shown in figure 2a, which has in general the same structure as the embodiment in figure 1. The process chamber 3 comprises a carrier system 2, on which substrates 1 are mounted on the front side. Process gasses 6 are directed to the surface of the substrates 1 on the front side 2a of the carrier system. On the rear side 2b of the carrier system 2, a heating surface 5 of a heating system 4 is arranged within a certain distance for radiantly heating the substrates 1 on the carrier system 2.

[0057] Figure 2a) differentiate from figure 1 in the heating system 4 and in particular in the kind of heating of the heating surface 5. The heating surface 5 is heated inductively through one or several induction coils 7. Between the heating surface 5 and the induction coils 7, an insulating cover 8 is arranged to separate the heating surface 5 thermically and electrically from the induction coils 7. The insulating cover 8 is preferably made of quartz glass, which has a high resistance against electrical shorts. Through the insulating cover 8, the induction coils 7 are separated from the interior of the process chamber 3 to avoid contact of the induction coils 7 with reactive process gases 6. The separation of the induction coils from the interior enhances the life time of the induction coils 7, which are very expensive, significantly.

[0058] In particular, the insulating cover 8 is composed of several elements, so that the exchange of defect parts can be done easily and quick.

[0059] The heating surface 5 has a modular design and comprises several heating plate elements 9, which are arranged in a matrix-like structure. The heating plate elements 9 are formed from preferably coated graphite, which has a high electromagnetically coupling and is very stable in different environments.

[0060] 34652-P-WO Ga / su 11.09.2025 In figure 2b), an excerpt of the heating system 4 from figure 2a) is shown. The heating plate elements 9 of the heating surface 5 are separated by a distance 10 from the induction coils 7. The distance 10 between the heating surface 5 or the heating plate elements 9 and the induction coils 7 could be adjusted for a better and more uniform heating of the substrates 1. In particular, the electromagnetic coupling is very sensitive to the distance 10 between the heating plate elements 9 and the induction coil 7. Therefore, changes in the distance 10 between the heating plate elements 9 and the induction coil 7 allows a fine tuning of local heating power by controlling the inductive coupling.

[0061] Furthermore, also the angle of the heating plate elements 9 to the inductions coils 7 can be adjusted and set for a certain temperature profile. In general, the distance 10 is adjustable in the range from 0mm to 50 mm. In figure 2b), the lower limit for the distance 10 between the heating plate elements 9 to the inductions coils 7 is set by the thickness of the insulating cover 8. The change of the distance 10 can be done during the whole process so that, in particular, an interruption of the process can be avoided. In this embodiment, the change of the distance 10 between the heating plate elements 9 and the induction coil 7 is set and controlled through the control device 12. By reducing the distance 10 between the induction coils 7 and the heating plate elements 9 of the heating surface 5, the inductive coupling can be influenced significantly, which results in a higher temperature of the heating surface 5. In another case, by increasing the distance 10 between the induction coils 7 and the heating plate elements 9 of the heating surface 5, the temperature of the heating surface 5 will decrease. The temperature of the heating surface 5 is very sensitive on the distance 10 between the induction coils 7 and heating surface 5 and heating plate elements 9 respectively, so that setting the temperature of the heating surface 5 can be adjusted in a certain range in an easy way.

[0062] The embodiment of figure 2a) also comprises temperature sensors 13, 13' and a control device 12. The temperature sensor 13 monitors in this embodiment the several heating plate elements 9 for a uniform heat distribution, wherein the sensor 13' monitors the temperature of the substrates 1 on the carrier system 2. In case of deviations in the temperature, the distance 10 between the heating plate elements 9 and the induction coils 7 is changed automatically by the control device 12. Also the power supply to the induction coils 7 as well as

[0063] 34652-P-WO Ga / su 11.09.2025 the transportation of the carrier system 2 through the process chamber 3 are controlled via the control device 12.

[0064] In figure 3, the heating system 4 of figure 2a is shown partially in a direct view. The heating system 4 comprises several induction coils 7 , which are arranged side by side next to each other. In front of the induction coils 7 , the insulting cover 8 as well as the heating surface 5 is drawn in excerpts. The heating surface 5 comprises several heating plate elements 9, which are arranged vertically on top of each other. Right and left from the shown arrangement of the heating plate elements 9, the heating surface 5 has a similar structure (not shown in the figure). The heating surface 5 has a modular design, wherein the heating plate elements 9 could be changed easily. The heating plate elements 9 are positioned through mounting elements 14 in front of the induction coils 7 , wherein the mounting elements 14 are arranged on the insulating cover 8. Alternatively, the mounting elements 14 could be also mounted directly on the induction coils 7 or other parts of the process chamber 3, like a frame. As shown in figure 3, several induction coils 7 are assigned to a group or plurality of heating plate elements 9. This allows a better adjustment of the heating of the heating surface 5 and the heating plate elements 9 respectively, so that e.g. a uniform temperature distribution is achieved over the whole heating surface 5. Therefore, the distance 10 between the induction coils 7 and the heating plate elements 9 at the outer sides of the heating system 4 can be smaller than the distance 10 in the middle.

[0065] In figures 4a) and 4b), an example of the carrier system 2 is shown in a front view and a section view. The front view in figure 4a) shows the front side 2a of the carrier system. The substrates 1 are arranged on the carrier system 2 in a matrix-like structure with three substrates 1 in a row and three substrates 1 in a column, so that a total number of nine substrates 1 are arranged on the carrier system 2. For each substrate 1, a recess 16 exists in the carrier system 2, wherein the substrates 1 are accommodated. The recesses 16 can have cut-outs 17 which leave the rear side of the substrates 1 uncovered so that the substrates 1 are supported only on their edges. In addition, the carrier system 2 can comprise mounts on the front side 2a for holding the substrate 1 within the recesses.

[0066] 34652-P-WO Ga / su 11.09.2025 The section view in figure 4b) shows in addition the heating surface 5 of the heating system 4, which radiantly heats the substrates 1 on the carrier system 2 by radiation 15. The substrates 1 in the recesses 16 are supported only on their edges from the rear side 2b of the carrier system 1, so that the radiation 15 could be effectively transported to the substrates 1. This grid structure has the advantage that the substrates 1 are mounted in a safe position allowing a high energy absorption of the substrates 1.

[0067] 34652-P-WO Ga / su 11.09.2025 Reference signs

[0068] 1 Substrate

[0069] 2 carrier system

[0070] 2a front side

[0071] 2b rear side

[0072] 3 process chamber

[0073] 4 heating system

[0074] 5 heating surface

[0075] 6 process gas

[0076] 7 induction coil

[0077] 8 insulating cover

[0078] 9 heating plate elements

[0079] 10 distance

[0080] 11 frame

[0081] 12 control device

[0082] 13, 13' sensor

[0083] 14 mounting elements for heating plate elements

[0084] 15 radiation

[0085] 16 recess

[0086] 17 cut-out

[0087] 34652-P-WO Ga / su 11.09.2025

Claims

Claims1. Process chamber (3) for the vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate (1), comprising a carrier system (2) for accommodating of several substrates (1) simultaneously, wherein the carrier system (2) is movable for transportation of the several substrates (1) simultaneously through the process chamber (3), a device for introducing process gases (6) into the process chamber (3), and a heating system (4) for radiantly heating the carrier system (2) and / or substrates (1) arranged on the carrier system (2), characterized in that the heating system (4) has a heating surface (5) which essentially only faces one surface side of the carrier system (2) and / or substrates (1), in particular the rear side (2b).

2. Process chamber according claim 1, characterized in that the heating surface (5) is heated directly, in particular by means of resistance heating.

3. Process chamber according to claim 1, characterized in that the heating surface (5) is heated inductively, wherein at least one induction coil (7) being provided for the heating surface (5).

4. Process chamber according to one of the preceding claims, characterized in that the heating surface (5) is formed from at least two, preferably a plurality of heating plate elements (9) arranged vertically one above the other and / or horizontally next to one another, in particular matrix-like next to each other.

5. Process chamber according to claims 3 and 4, characterized in that one induction coil (7) is assigned to a heating plate element (9) or a group of heating plate elements (9) or to all heating plate elements (9).

6. Process chamber according to claims 3 and 4 and preferably according to claim 5, characterized in that different distances and / or angles of the heating plate elements (9) to34652-P-WO Ga / su 11.09.2025the at least one induction coil (7) are adjustable for each heating plate element (9) or a group of heating plate elements (9).

7. Process chamber (3) according to claim 6, characterized in that the distance (10) between the heating plate elements (9) and the at least one induction coil (7) is adjustable in the range from 0 mm to 50 mm, preferably in the range from 3 mm to 30 mm, more preferably in the range from 5 mm to 15 mm.

8. Process chamber (3) according to claims 3 and 4 and preferably according to one of claims 5 to 7, characterized in that the heating plate elements (9) are arranged on the at least one induction coil (7) and / or a part of the process chamber (3) by means of mounting elements (14) made of a material without an electromagnetically coupling, e.g. ceramic material or quartz.

9. Process chamber (3) according to claims 3 and 4 and preferably according to one of claims 5 to 8, characterized in that the heating plate elements (9) have a thickness profile, in particular that the heating plate element (9) has partly a greater thickness.

10. Process chamber (3) according to claims 3 and 4 and preferably according to one of claims 5 to 9, characterized in that an insulating cover (8) is arranged between the heating plate elements (9) and the at least one induction coil (7), in particular for thermal and / or electrical insulation of the at least one induction coil with respect to the heating surface or the heating plate elements (9).

11. Process chamber (3) according to claim 10, characterized in that the insulation cover (8) completely separates the at least one induction coil (7) from an interior of the process chamber (3) and / or that the heating plate elements (9) are mounted onto the insulating cover (8).

12. Process chamber (3) according to one of the preceding claims 10 or 11, characterized in that the insulating cover (8) is formed from quartz glass or ceramic material and / or in that the insulating cover (8) is composed of several elements.34652-P-WO Ga / su 11.09.202513. Process chamber (3) according to one of the preceding claims, characterized in that the carrier system (2) has a grid-like structure, preferably consisting of recesses (16) in the carrier (2) to accommodate the substrates (1), more preferably with recesses (16) having cut-outs (17) leaving rear sides of substrates (1) free and supporting substrates (1) only on the rear sides of their edges.

14. Process chamber (3) according to one of the preceding claims, characterized in that the process chamber (3) comprises means for monitoring the temperature of the substrates (1) and / or the heating system (4), in particular the heating surface (5), preferably the individual heating plate elements (9).

15. Process chamber (3) according to one of the preceding claims, characterized in that the process chamber (3) comprises a control device (12) which is designed to control the movement of the carrier system (2), the device for introducing process gases (6) and / or the heating system (4).

16. Process chamber (3) according to claim 15 and at least claim 3, characterized in that a plurality of induction coils (7) are provided for the heating surface (5), wherein the induction coils (7) being controllable individually or in groups by means of the control device (12).

17. Process chamber (3) according to claim 16 and at least claim 6, characterized in that the distance of the heating plates (9) is adjustable mechanically or electronically by the control device (12), in particular without opening the process chamber (3) and / or during a deposition process.

18. A device for vapor phase deposition of a semiconductor layer, in particular a silicon layer on a substrate (1), comprising a process chamber (3) according to one of the previous claims.34652-P-WO Ga / su 11.09.2025

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