Modification device, processing system, and processing method

Abstract

This modification device for modifying a surface of a die held by a tape frame using plasma includes: a processing container; a gas supply part for supplying a processing gas into the processing container; a plasma generation part configured to generate plasma of the processing gas in the processing container; and a support part disposed in the processing container and supporting the tape frame. The tape frame supported by the support part is provided with a cover arranged so as to surround the die held by the tape frame and protect a surface of a frame portion of the tape frame.

Description

Modifying Device, Processing System, and Processing Method

[0001] The present disclosure relates to a modifying device, a processing system, and a processing method.

[0002] Patent Document 1 discloses a chip-on-wafer bonding method for mounting chips on a wafer. In this chip-on-wafer bonding method, after performing surface activation treatment and hydrophilic treatment on the surface of the chip and surface activation treatment and hydrophilic treatment on the surface of the substrate, a plurality of chips are bonded to the substrate.

[0003] Japanese Patent No. 6337400

[0004] The technology according to the present disclosure appropriately modifies the surface of a die held by a tape frame with plasma.

[0005] One aspect of the present disclosure is a modifying device that modifies the surface of a die held by a tape frame with plasma, including a processing container, a gas supply unit that supplies a processing gas into the processing container, a plasma generation unit configured to generate plasma of the processing gas in the processing container, and a support unit disposed in the processing container and supporting the tape frame. A cover is provided on the tape frame supported by the support unit so as to surround the die held by the tape frame and protect the surface of the frame of the tape frame.

[0006] According to the present disclosure, the surface of a die held by a tape frame can be appropriately modified with plasma.

[0007] This is a side view showing a schematic configuration of a wafer with multiple dies mounted on it. This is a side view showing a schematic configuration of a tape frame holding multiple dies. This is a perspective view showing a schematic configuration of a tape frame holding multiple dies. This is a plan view showing a schematic configuration of the processing system according to this embodiment. This is a side view showing a schematic configuration of the modification apparatus according to this embodiment. This is an explanatory diagram showing how a cover is placed on the die supported by the tape frame in the modification apparatus of this embodiment. This is an explanatory diagram showing how a cover is placed on the wafer in the modification apparatus of this embodiment. This is a flow chart showing the main steps of the dion wafer manufacturing process. This is an explanatory diagram schematically showing some steps of the dion wafer manufacturing process according to this embodiment. This is a plan view showing a schematic configuration of a processing system according to another embodiment. This is an explanatory diagram schematically showing how a cover is installed according to another embodiment. This is an explanatory diagram schematically showing how a cover is installed according to another embodiment. This is a side view showing a schematic configuration of a carrier holding multiple dies. This is an explanatory diagram schematically showing some steps of the dion wafer manufacturing process according to another embodiment. This is a side view showing a schematic configuration of a modification apparatus according to another embodiment. This is an explanatory diagram showing how a cover is placed on the die supported by the tape frame in the modification apparatus of another embodiment. This is an explanatory diagram showing how a cover is placed on a wafer in a modification apparatus of another embodiment. This is a side view showing a schematic configuration of the lifting section according to another embodiment. This is a side view showing a schematic configuration of a part of the modification apparatus according to another embodiment.

[0008] The modification apparatus, processing system, and processing method according to this embodiment will be described below with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0009] In this embodiment, a diion wafer manufacturing process is carried out, and as shown in Figure 1, a plurality of dies D are mounted on a wafer W, which is the target object. Specifically, as shown in Figures 2 and 3, a plurality of dies D held on a tape frame P are bonded to the wafer W to be mounted.

[0010] As shown in Figures 1 and 2, the die D has a structure in which, for example, a silicon layer S and a device layer E are stacked. A circuit is formed on the device layer E. In the die D, the side on which the device layer E is formed is called the surface Da, and the side opposite to the surface Da is called the back surface Db.

[0011] As shown in Figure 1, the wafer W on which the die D is mounted is a semiconductor wafer, such as a silicon substrate or a glass substrate, used in the semiconductor device manufacturing process. For example, the wafer W has a diameter of 300 mm and a thickness of approximately 800 μm. On the wafer W, the side on which the die D is mounted is called the surface Wa, and the side opposite to the surface Wa is called the back surface Wb. The device layer E on the surface Da side of the die D is bonded to the surface Wa.

[0012] The number and arrangement of dies D mounted on the surface Wa of the wafer W are set to a desired pattern. Furthermore, a device layer (not shown) may be formed on the surface Wa. Such a device layer is formed to correspond to the device layer E of the die D.

[0013] As shown in Figures 2 and 3, the tape frame P has a frame F and a tape T. The frame F has an annular shape and is made of, for example, stainless steel. The tape T is fixed to the back surface of the frame F. The surface of the tape T is adhesive, and a plurality of dies D are held on the surface (adhesive surface) of the tape T. The tape T holds the silicon layer S on the back surface Db side of the dies D.

[0014] Next, the processing system 1 according to this embodiment will be described. In the processing system 1, a plurality of dies D held on a tape frame P are bonded to a wafer W for mounting. Figure 4 is a plan view showing a schematic configuration of the processing system 1.

[0015] As shown in Figure 4, the processing system 1 has a configuration in which the loading / unloading station 10 and the processing station 20 are connected as an integrated unit. At the loading / unloading station 10, for example, hoops Fw and Fp, each capable of accommodating multiple wafers W and multiple tape frames P, are loaded and unloaded from the outside. The processing station 20 is equipped with various processing devices for realizing a series of processes described later.

[0016] A hoop mounting platform 30 is provided at the loading / unloading station 10. In the illustrated example, multiple hoops, for example, two hoops Fw and two hoops Fp, are placed on the hoop mounting platform 30 in a line along the Y-axis. The number and arrangement of hoops Fw and Fp placed on the hoop mounting platform 30 are not limited to this embodiment and can be determined arbitrarily.

[0017] A transport device 40 is provided adjacent to the hoop mounting table 30 on the positive X-axis side. The transport device 40 is configured to move freely along a transport path 41 extending in the Y-axis direction. The transport device 40 also has, for example, two transport arms 42, 42 that hold and transport the wafer W and tape frame P. Each transport arm 42 is configured to move freely in the horizontal direction, vertical direction, around the horizontal axis, and around the vertical axis, and is configured to transport the wafer W and tape frame P to the hoops Fw, Fp of the hoop mounting table 30, the transition stage 60 (described later), and the buffer device 61 (described later).

[0018] The processing station 20 is provided with, for example, two processing blocks 21 and 22. The first processing block 21 and the second processing block 22 are arranged in this order from the negative X-axis side to the positive X-axis side.

[0019] The first processing block 21 is equipped with a transport device 50, a transition stage 60, a buffer device 61, a transport device 70, a transition stage 80, a modification device 90, a wafer cleaning device 100, a die cleaning device 101, a wafer hydrophilization device 102, and a die hydrophilization device 103. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined arbitrarily.

[0020] The transport device 50 is configured to move freely along a transport path 51 that extends in the X-axis direction. The transport device 50 also has, for example, two transport arms 52, 52 that hold and transport the wafer W and tape frame P. Each transport arm 52 is configured to move freely in the horizontal direction, vertical direction, around the horizontal axis and around the vertical axis, and is configured to transport the wafer W and tape frame P to the transition stage 60, buffer device 61, transition stage 80, wafer cleaning device 100, die cleaning device 101, wafer hydrophilization device 102 and die hydrophilization device 103, the transition stage 120 (described later), and the buffer device 121 (described later).

[0021] The transition stage 60 and buffer device 61 are positioned on the negative X-axis side of the transport device 50. The transition stage 60 and buffer device 61 are stacked vertically from top to bottom in this order. Multiple buffer devices 61 may be stacked.

[0022] The transition stage 60 transfers the wafer W and tape frame P between the transport device 40 and the transport device 50. The buffer device 61 temporarily stores the wafer W and tape frame P.

[0023] The conveying device 70, the transition stage 80, and the modification device 90 are arranged on the positive Y-axis side of the conveying device 50. Two transition stages 80 are arranged side by side in the X-axis direction on the negative Y-axis side of the conveying device 70. Two modification devices 90 are arranged on the positive X-axis side and the negative X-axis side, with the conveying device 70 and the two transition stages 80 in between.

[0024] The transport device 70 has, for example, two transport arms 71, 71 that hold and transport the wafer W and the tape frame P. Each transport arm 71 is configured to be movable in the horizontal direction, vertical direction, around the horizontal axis and around the vertical axis, and is configured to transport the wafer W and the tape frame P to the transition stage 80 and the modification device 90.

[0025] The transition stage 80 transfers the wafer W and the tape frame P between the transport device 50 and the transport device 70.

[0026] The modification apparatus 90 modifies the surface Wa of the wafer W and the surface Da of the die D held on the tape frame P using plasma. In the modification apparatus 90, for example, under a reduced pressure atmosphere, the processing gas, such as oxygen gas, nitrogen gas, or argon gas, is excited, turned into plasma, and ionized. These oxygen ions, nitrogen ions, argon ions, etc., are irradiated onto the surface Wa of the wafer W or the surface Da of the die D, and the surface Wa or surface Da is plasma-treated and modified. Details of the configuration of the modification apparatus 90 will be described later.

[0027] The wafer cleaning device 100, die cleaning device 101, wafer hydrophilization device 102, and die hydrophilization device 103 are arranged on the negative Y-axis side of the transport device 50. The wafer cleaning device 100 and the wafer hydrophilization device 102 are stacked in this order from the top in the vertical direction. The die cleaning device 101 and the die hydrophilization device 103 are stacked in this order from the top in the vertical direction. The wafer cleaning device 100 and the die cleaning device 101 are arranged in this order from the negative X-axis side to the positive X-axis side. The wafer hydrophilization device 102 and the die hydrophilization device 103 are arranged in this order from the negative X-axis side to the positive X-axis side.

[0028] The wafer cleaning apparatus 100 cleans the surface Wa of the wafer W. In the wafer cleaning apparatus 100, a cleaning solution, such as pure water, DI water, DHF, or IPA, is supplied onto the wafer W while it is being rotated, for example, by a spin chuck. The supplied cleaning solution then diffuses over the surface Wa of the wafer W, and the surface Wa is cleaned.

[0029] The die cleaning apparatus 101 also cleans the surface Da of the die D, similar to the wafer cleaning apparatus 100. In the die cleaning apparatus 101, the tape frame P held in the chuck is rotated while a cleaning solution is supplied onto the die D held in the tape frame P. As a result, the supplied cleaning solution diffuses over the surface Da of the die D, and the surface Da is cleaned.

[0030] The wafer hydrophilization apparatus 102 hydrophilizes and rinses the surface Wa of the wafer W. In the wafer hydrophilization apparatus 102, for example, the wafer W held in a spin chuck is rotated while pure water is supplied onto the wafer W. As a result, the supplied pure water diffuses over the surface Wa of the wafer W, making the surface Wa hydrophilic. The surface Wa is also rinsed by the pure water.

[0031] The die hydrophilization apparatus 103, like the wafer hydrophilization apparatus 102, hydrophilizes and rinses the surface Da of the die D. In the die hydrophilization apparatus 103, for example, a cleaning solution is supplied onto the die D held on the tape frame P while the tape frame P held on the spin chuck is rotated. As a result, the supplied cleaning solution diffuses over the surface Da of the die D, and the surface Da becomes hydrophilic. The surface Da is then rinsed with pure water.

[0032] The second processing block 22 is equipped with a transport device 110, a transition stage 120, a buffer device 121, and a bonding device 130 as a transfer device. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined arbitrarily.

[0033] The transport device 110 is configured to move freely along a transport path 111 that extends in the X-axis direction. The transport device 110 also has, for example, two transport arms 112, 112 that hold and transport the wafer W and the tape frame P. Each transport arm 112 is configured to move freely in the horizontal direction, vertical direction, around the horizontal axis, and around the vertical axis, and is configured to transport the wafer W and the tape frame P to the transition stage 120, buffer device 121, and bonding device 130.

[0034] The transition stage 120 and buffer device 121 are positioned on the negative X-axis side of the transport device 110. The transition stage 120 and buffer device 121 are stacked vertically from top to bottom in this order. Note that multiple buffer devices 121 may be stacked.

[0035] The transition stage 120 transfers the wafer W and tape frame P between the transport device 50 and the transport device 110. The buffer device 121 temporarily stores the wafer W and tape frame P.

[0036] The bonding apparatus 130 is arranged, for example, in two in the positive Y-axis direction of the transport apparatus 110 and in two in the negative Y-axis direction of the transport apparatus 110. The bonding apparatus 130 picks up the die D held by the tape frame P and bonds it to the surface Wa of the wafer W. The configuration of the bonding apparatus 130 is arbitrary.

[0037] The processing system 1 described above is provided with at least one control unit, a control device 140. The control device 140 processes computer-executable instructions that cause the processing system 1 to perform the various processes described herein. The control device 140 may be configured to control each element of the processing system 1 to perform the various processes described herein. In one embodiment, some or all of the control device 140 may be included in the processing system 1. The control device 140 is implemented, for example, by a computer. The control device 140 may be one or more circuits, and may be provided as a single unit or in separate parts. The control device 140 may include a processing unit, a storage unit, and a communication interface. The functions realized by the processing units described in this disclosure may be implemented in circuits or processing circuits, including general-purpose processors, application-specific processors, integrated circuits, ASICs (Application Specific Integrated Circuits), CPUs (Central Processing Units), conventional circuits, and / or combinations thereof, programmed to realize the functions described. A processor is considered to be a circuit or processing circuit, including transistors and other circuits. A processor may be a programmed processor that executes a program stored in memory. This program (computer program product) may be stored in memory beforehand or may be retrieved via a medium when needed. The medium may be various computer-readable storage media, such as memory cards, optical discs, HDDs (Hard Disk Drives), or other removable storage media, and the program may be provided in a form stored on such storage media. Alternatively, the medium may be a communication line connected to a communication interface, and the program may be distributed by a remote server device or the like. The acquired program is stored in the storage unit and read from the storage unit and executed by the processing unit.The memory unit may include storage media such as RAM (Random Access Memory), ROM (Read Only Memory), EEPROM (Electronically Erasable Programmable Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface may communicate with the processing system 1 via a communication line such as a LAN (Local Area Network). In this disclosure, circuits, units, and means are hardware programmed to perform or execute the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If the hardware is a processor that is considered to be a type of circuit, then the circuit, means, or unit is a combination of hardware and software used to constitute the hardware and / or processor.

[0038] Although the processing system 1 according to this embodiment is configured as described above, other processing devices may be further arranged in the processing system 1 depending on the purpose, and some processing devices may be arranged outside the processing system 1 depending on the purpose.

[0039] For example, the processing system 1 may be equipped with an inspection device for inspecting a wafer W on which a die D is mounted. The inspection device may, for example, use an IR camera to image the wafer W and inspect for the presence or absence of voids between the surface Wa of the wafer W and the die D.

[0040] Next, the configuration of the reforming apparatus 90 described above will be explained. Figure 5 is a longitudinal cross-sectional view showing a schematic configuration of the reforming apparatus 90.

[0041] As shown in Figure 5, the modification apparatus 90 has a processing container (chamber) 200 whose interior can be sealed. The processing container 200 is configured to allow for reduced pressure inside and defines a plasma processing space where plasma is generated. The processing container 200 is made of, for example, aluminum. The processing container 200 is also connected to ground potential. An inlet / outlet 201 for loading tape frames P or wafers W is formed on the side of the processing container 200 facing the transport device 70, and a gate valve 202 is provided at the inlet / outlet 201. A ground box (not shown) is provided above the processing container 200.

[0042] A support section 210 and a cover 220 are provided inside the processing container 200. The support section 210 supports the tape frame P or wafer W. The support section 210 has a lower electrode 211, an electrostatic chuck 212, a support body 213, and an insulator 214. The cover 220 is positioned to surround the die D of the tape frame P supported by the support section 210, or the wafer W supported by the support section 210.

[0043] The lower electrode 211 is made of a conductive material such as aluminum. In one embodiment, a flow path 216 for a temperature-controlled fluid is formed inside the lower electrode 211. A temperature-controlled fluid is supplied to the flow path 216 from a chiller unit (not shown) located outside the processing container 200. The temperature-controlled fluid supplied to the flow path 216 is returned to the chiller unit. By circulating, for example, low-temperature brine as the temperature-controlled fluid in the flow path 216, the support part 210 (specifically, the electrostatic chuck 212), the tape frame P or wafer W, and the cover 220 can be cooled to a desired temperature. By circulating, for example, high-temperature brine as the temperature-controlled fluid in the flow path 216, the support part 210 (specifically, the electrostatic chuck 212), the tape frame P or wafer W, and the cover 220 can be heated to a desired temperature.

[0044] Furthermore, if a temperature control mechanism is provided in the support portion 210, the form of the temperature control mechanism is not limited to the flow path 216 described above, but may be in other forms, such as a resistance heating type heater. Also, the member in the support portion 210 on which the temperature control mechanism is provided is not limited to the lower electrode 211, but may be other members.

[0045] The electrostatic chuck 212 is disposed above the lower electrode 211 and is configured to be able to electrostatically adsorb the tape T (die D) of the tape frame P or the wafer W. In one embodiment, as shown in FIGS. 6 and 7, the upper surface of the central portion 212a of the electrostatic chuck 212 is configured to be higher than the upper surface of the peripheral portion 212b. As shown in FIG. 5, the electrostatic chuck 212 has a configuration in which an electrode 215 is sandwiched between insulating materials made of an insulating material such as ceramic. The electrode 215 is formed in the central portion 212a. A chuck power supply (not shown) is connected to the electrode 215. The chuck power supply may be a DC power supply or an AC power supply. A voltage is applied from the chuck power supply to the electrode 215, and the tape T (die D) of the tape frame P or the wafer W is electrostatically adsorbed on the upper surface of the electrostatic chuck 212.

[0046] Gas discharge holes (not shown) for discharging a heat transfer gas such as helium may be formed on the upper surface of the electrostatic chuck 212 toward the back surface of the tape T of the tape frame P or the back surface of the wafer W. The heat transfer gas from a gas supply unit (not shown) is supplied through these gas discharge holes. Heat is efficiently transferred from the upper surface of the electrostatic chuck 212 to the die D or the wafer W by this heat transfer gas.

[0047] The support 213 is disposed so as to surround the lower electrode 211 and the electrostatic chuck 212. The support 213 has an annular shape in plan view and is formed of an insulating material such as quartz. In one embodiment, as shown in FIGS. 6 and 7, on the upper surface of the support 213, the inner peripheral portion 213b protrudes from the outer peripheral portion 213a, and the inner peripheral portion 213b is disposed above the peripheral portion 212b of the electrostatic chuck 212. Note that the inner peripheral portion 213b may protrude further upward in order to suppress the intrusion of plasma between the electrostatic chuck 212 and the support 213.

[0048] When the support portion 210 supports the tape frame P, the support 213 supports the frame F. That is, in the tape frame P, the tape T holding the die D is supported by the electrostatic chuck 212, and the frame F is supported by the support 213. Note that the frame F may be supported by the electrostatic chuck 212, and a frame electrode (not shown) may be provided inside the electrostatic chuck 212 separately from the electrode 215. In such a case, a voltage is applied from the chuck power supply to the frame electrode, and the frame F is electrostatically attracted to the upper surface of the electrostatic chuck 212.

[0049] As shown in FIG. 5, the insulator 214 supports the peripheral portion of the support 213. The insulator 214 has, for example, a cylindrical shape having an outer diameter equivalent to the outer diameter of the support 213, and is formed of an insulating material such as ceramic.

[0050] The cover 220 is arranged so as to surround the die D or the wafer W of the tape frame P supported by the support portion 210. The cover 220 has an annular shape in plan view and a rectangular shape in cross-sectional view. Further, the cover 220 is a material that does not attract ions, and is formed of a conductive material or an insulating material, such as quartz or silicon. Note that the cover 220 is configured to be movable up and down by a third elevating portion 250 described later. Then, the cover 220 is supported by a support portion (not shown) at a storage position above the support portion 210 and is stored in a standby state.

[0051] As shown in Figure 6, when the support portion 210 supports the tape frame P, the cover 220 descends from a waiting position at the storage position (transport position) P1 as shown in Figures 6(a) and (b), and is positioned above the frame F supported by the support 213 at the processing position P2 as shown in Figure 6(c). The radial length of the cover 220 is greater than the radial length of the frame F. The cover 220 covers the frame F and the tape T exposed between the die D and the frame F, protecting the frame F and the tape T. The cover 220 also functions as a so-called edge ring, acting to effectively direct ions only to the multiple dies D inside the cover 220 during plasma processing. In other words, the cover 220 optimizes ion uniformity, enabling good and uniform plasma processing at both the central and peripheral parts of the multiple dies D.

[0052] As shown in Figure 7, when the support portion 210 supports the wafer W, the cover 220 descends from its waiting position P1 as shown in Figures 7(a) and (b), and is positioned above the support 213 at the processing position P2 as shown in Figure 7(c). In this case, the cover 220 functions as an edge ring as described above, and the cover 220 optimizes ion uniformity, enabling good and uniform plasma processing at both the center and periphery of the wafer W.

[0053] As shown in Figure 5, the support section 210 is provided with a first lifting section 230, a second lifting section 240, and a third lifting section 250. The first lifting section 230, the second lifting section 240, and the third lifting section 250 are arranged in this order from the radially inner side to the radially outer side of the support section 210.

[0054] The first lifting unit 230 raises and lowers the wafer W relative to the upper surface of the electrostatic chuck 212. The first lifting unit 230 has a lifter 231 and an actuator 232.

[0055] The lifter 231 is a substantially columnar member extending in the vertical direction, and is positioned by inserting it through a through hole 217 formed by penetrating the lower electrode 211 and the central portion 212a of the electrostatic chuck 212 in the thickness direction. When the lifter 231 is raised, its upper end protrudes from the upper surface of the central portion 212a of the electrostatic chuck 212, enabling it to support the wafer W. This lifter 231 allows the wafer W to be transferred between the support portion 210 and the transport arm 71 of the transport device 70. Three or more lifters 231 are provided along the circumferential direction of the electrostatic chuck 212, spaced apart from each other.

[0056] The actuator 232 drives the lifter 231 in the vertical direction. The actuator 232 includes, for example, a support member 233 that supports a plurality of lifters 231, and a drive unit 234 that generates a driving force to raise and lower the support member 233 and raise and lower the plurality of lifters 231. The drive unit 234 has, for example, a motor (not shown) as a drive source that generates the above driving force.

[0057] The second lifting unit 240 raises and lowers the frame F relative to the upper surface of the support 213. The second lifting unit 240 has a lifter 241 and an actuator 242.

[0058] The lifter 241 is a substantially columnar member extending in the vertical direction, and is positioned by inserting it through a through hole 218 formed in the thickness direction of the support body 213. When the lifter 241 is raised, its upper end protrudes from the upper surface of the support body 213, enabling it to support the frame F. This lifter 241 allows the tape frame P to be transferred between the support body 210 and the transport arm 71 of the transport device 70. Three or more lifters 241 are provided along the circumferential direction of the support body 213, spaced apart from each other.

[0059] The actuator 242 drives the lifter 241 in the vertical direction. The actuator 242 is provided for each lifter 241 and includes a support member 243 that supports the lifter 241, and a drive unit 244 that generates a driving force to raise and lower the support member 243 and raise and lower the lifter 241. The drive unit 244 has, for example, a motor (not shown) as a drive source that generates the driving force.

[0060] The third lifting unit 250 raises and lowers the cover 220 relative to the upper surface of the support 213. The third lifting unit 250 has a lifter 251 and an actuator 252.

[0061] The lifter 251 is a substantially columnar member extending in the vertical direction and is positioned radially outward of the support 213. When the lifter 251 is raised, it can support the cover 220. The lifter 231 allows the cover 220 to be raised and lowered between the storage position P1 and the processing position P2. Three or more lifters 251 are provided along the circumferential direction of the support 213, spaced apart from each other.

[0062] The actuator 252 drives the lifter 251 in the vertical direction. The actuator 252 is provided for each lifter 251 and includes a support member 253 that supports the lifter 251, and a drive unit 254 that generates a driving force to raise and lower the support member 253 and raise and lower the lifter 251. The drive unit 254 has, for example, a motor (not shown) as a drive source that generates the above driving force.

[0063] A first RF (Radio Frequency) power supply unit 261 is connected to the lower electrode 211 via a matching unit 260, which consists of, for example, a blocking capacitor. The first RF power supply unit 261 supplies a first RF signal (first RF power) to the lower electrode 211. The first RF signal is a source RF signal (source RF power) for generating plasma. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz.

[0064] Furthermore, an RF power supply unit (not shown) that supplies a bias RF signal (bias RF power) to the lower electrode 211 may be connected to the lower electrode 211 via a matching unit (not shown). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz.

[0065] An upper electrode 270 is positioned above the lower electrode 211 (support portion 210). The upper electrode 270 constitutes at least a part of the ceiling of the processing container 200. The upper surface of the lower electrode 211 and the lower surface of the upper electrode 270 are positioned parallel to each other and facing each other with a predetermined distance between them. The upper electrode 270 is made of a conductive material such as aluminum, and its lower surface is made of a semiconductor material such as silicon. An upper electrode cover (not shown) made of quartz, for example, may be provided on the lower surface of the upper electrode 270.

[0066] A second RF power supply unit 272 is connected to the upper electrode 270 via a matching unit 271, which is, for example, a blocking capacitor. The second RF power supply unit 272 supplies a second RF signal (second RF power) to the upper electrode 270. The second RF signal is a source RF signal (source RF power) for generating plasma. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz.

[0067] The first RF power supply unit 261, which supplies the first RF signal to the lower electrode 211, and the second RF power supply unit 272, which supplies the second RF signal to the upper electrode 270, are controlled by the control device 140 described above.

[0068] During plasma processing, a first RF signal is supplied from the first RF power supply unit 261 to the lower electrode 211, and a second RF signal is supplied from the second RF power supply unit 272 to the upper electrode 270. Then, plasma is generated from the processing gas in the plasma processing space inside the processing vessel 200. That is, the first RF power supply unit 261 and the second RF power supply unit 272 can function as at least part of the plasma generation unit in this disclosure.

[0069] A hollow section 280 is formed inside the upper electrode 270. A gas supply pipe 281 is connected to the hollow section 280. A processing gas supply unit 290, an inert gas supply unit 300, and a humidifying gas supply unit 310 are connected to the gas supply pipe 281.

[0070] The processing gas supply unit 290 supplies processing gas to the hollow portion 280 of the upper electrode 270 via the gas supply pipe 281. Examples of processing gases used include oxygen, nitrogen, and argon. The processing gas supply unit 290 comprises a processing gas source 291, a flow regulator 292, and a valve 293. The processing gas supplied from the processing gas source 291 is flow-controlled by the flow regulator 292 and valve 293 and supplied to the hollow portion 280 of the upper electrode 270 via the gas supply pipe 281.

[0071] The inert gas supply unit 300 supplies inert gas to the hollow portion 280 of the upper electrode 270 via the gas supply pipe 281. Examples of inert gases used include nitrogen gas and argon gas. The inert gas supply unit 300 includes an inert gas supply source 301, a flow regulator 302, and a valve 303. The inert gas supplied from the inert gas supply source 301 is flow-controlled by the flow regulator 302 and the valve 303 and supplied to the hollow portion 280 of the upper electrode 270 via the gas supply pipe 281.

[0072] The humidifying gas supply unit 310 supplies humidified gas (hereinafter referred to as "humidifying gas") to the hollow portion 280 of the upper electrode 270 via the gas supply pipe 281. For example, humidified nitrogen gas or humidified argon gas can be used as the humidifying gas. Alternatively, air with adjusted temperature and humidity may be used as the humidifying gas. The humidifying gas supply unit 310 includes a humidifying gas supply source 311, a flow regulator 312, and a valve 313. The humidifying gas supplied from the humidifying gas supply source 311 is flow-controlled by the flow regulator 312 and the valve 313 and supplied to the hollow portion 280 of the upper electrode 270 via the gas supply pipe 281.

[0073] A baffle plate 282 is provided inside the hollow section 280 to promote uniform diffusion of the processing gas. The baffle plate 282 has numerous small holes. On the lower surface of the upper electrode 270, numerous gas outlets 283 are formed to eject the processing gas from the hollow section 280 of the upper electrode 270 into the processing container 200.

[0074] Inside the processing container 200, an exhaust plate 320 is provided between the support 213 and the inner wall of the processing container 200. Multiple baffle holes are formed in the exhaust plate 320. This exhaust plate 320 ensures that the atmosphere inside the processing container 200 is uniformly exhausted.

[0075] An air intake port 321 is formed at the bottom of the processing container 200. An air intake pipe 322 is connected to the air intake port 321. The air intake pipe 322 communicates with a vacuum pump 323 that reduces the atmosphere inside the processing container 200 to a predetermined vacuum level. The vacuum pump 323 may include a turbomolecular pump, a dry pump, or a combination thereof.

[0076] Next, the dion wafer manufacturing process performed in the processing system 1 configured as described above will be explained. Figure 8 is a flowchart showing the main steps of the dion wafer manufacturing process. Figure 9 is an explanatory diagram schematically showing some steps of the dion wafer manufacturing process.

[0077] First, hoops Fw and Fp, each containing multiple wafers W and tape frames P respectively, are placed on the hoop mounting table 30 of the loading / unloading station 10. At this time, as shown in Figure 9(a), multiple dies D are held in the tape frame P.

[0078] Next, the wafer W inside the hoop Fw is removed by the transport device 40 and transported to the transition stage 60. The wafer W transported to the transition stage 60 is then transported to the wafer cleaning device 100 by the transport device 50. In the wafer cleaning device 100, the surface Wa of the wafer W is cleaned, for example, with a cleaning solution (St1 in Figure 8).

[0079] Next, the wafer W is transported to the transition stage 80 by the transport device 50, and then to the modification device 90 by the transport device 70. In the modification device 90, plasma treatment is performed, for example, under a reduced pressure atmosphere, and the surface Wa of the wafer W is modified (St2 in Figure 8).

[0080] In St2, first, inert gas is supplied to the inside of the processing container 200 from the inert gas supply unit 300, and humidifying gas is supplied from the humidifying gas supply unit 310. Then, the amount of moisture inside the processing container 200 is adjusted.

[0081] Next, as shown in Figure 7(a), the wafer W is transferred from the transport arm 71 of the transport device 70 to the lifter 231, and then the inside of the processing container 200 is evacuated to the desired vacuum level. Subsequently, as shown in Figure 7(b), the lifter 231 is lowered and the wafer W is placed on the support part 210. At this time, the cover 220 is supported by the lifter 251 and waiting at the storage position P1. After that, as shown in Figure 7(c), the lifter 251 is lowered and the cover 220 is placed at the processing position P2.

[0082] Next, a processing gas is supplied to the inside of the processing container 200 from the processing gas supply unit 290. Subsequently, a first RF signal (first RF power) is supplied to the lower electrode 211 from the first RF power supply unit 261, and a second RF signal (second RF power) is supplied to the upper electrode 270 from the second RF power supply unit 272. Then, the processing gas is excited in the plasma processing space inside the processing container 200, and plasma is generated. Ions in the plasma generated in this way are irradiated onto the surface Wa of the wafer W, and the surface Wa is modified. As a result, dangling bonds are formed on the surface Wa.

[0083] Thus, in this embodiment, by modifying the surface Wa of the wafer W while the moisture content inside the processing container 200 is adjusted, the formation of dangling bonds on the surface Wa is promoted. As a result, as will be described later, the bonding strength between the wafer W and the die D to be bonded can be improved.

[0084] Furthermore, during plasma processing, the cover 220 functions as an edge ring as described above, and the cover 220 optimizes ion uniformity, enabling good and uniform plasma processing in both the central and peripheral parts of the wafer W.

[0085] Next, the wafer W is transported to the transition stage 80 by the transport device 70, and then to the wafer hydrophilization device 102 by the transport device 50. In the wafer hydrophilization device 102, for example, hydroxyl groups (silanol groups) are attached to the surface Wa of the wafer W modified with St2 by pure water, and the surface Wa is made hydrophilic. The surface Wa is also rinsed with the same pure water (St3 in Figure 8).

[0086] Next, the wafer W is transported to the transition stage 120 by the transport device 50, and then to the bonding device 130 by the transport device 110. If bonding has already been performed in four bonding devices 130, the wafer W is transported to the buffer device 121 and temporarily stored in the buffer device 121.

[0087] While the wafer W is undergoing the processes St1 to St3 described above, the die D held in the tape frame P is processed. First, the tape frame P in the hoop Fp is removed by the transport device 40 and transported to the transition stage 60. The tape frame P transported to the transition stage 60 is then transported to the die cleaning device 101 by the transport device 50. In the die cleaning device 101, the surface Da of the die D is cleaned, for example, with a cleaning solution (St4 in Figure 8).

[0088] Next, the tape frame P is transported to the transition stage 80 by the transport device 50, and then to the modification device 90 by the transport device 70. In the modification device 90, for example, plasma treatment is performed under a reduced pressure atmosphere, and the surface Da of the die D is modified (St5 in Figure 8).

[0089] In St5, first, inert gas is supplied to the inside of the processing container 200 from the inert gas supply unit 300, and humidifying gas is supplied from the humidifying gas supply unit 310. Then, the amount of moisture inside the processing container 200 is adjusted.

[0090] Next, as shown in Figure 6(a), the tape frame P is transferred from the transport arm 71 of the transport device 70 to the lifter 241, and then the inside of the processing container 200 is evacuated to reduce the pressure to the desired vacuum level. Subsequently, as shown in Figure 6(b), the lifter 241 is lowered to place the tape frame P on the support part 210. Specifically, the multiple dies D (tape T) held by the tape frame P are supported by the central part 212a of the electrostatic chuck 212, and the frame F is supported by the support body 213. At this time, the cover 220 is supported by the lifter 251 and waiting at the storage position P1. After that, as shown in Figure 6(c), the lifter 251 is lowered to place the cover 220 at the processing position P2. Then, the frame F and tape T are covered and protected by the cover 220.

[0091] Furthermore, as shown in Figure 6(c), when the cover 220 is placed at the processing position P2, the cover 220 is positioned with a small gap between it and the frame F. The gap between the cover 220 and the frame F should be small in order to suppress the intrusion of plasma. On the other hand, if the cover 220 and the frame F are in contact, there is a risk of particle generation, so it is preferable to make the gap between the cover 220 and the frame F very small.

[0092] Furthermore, as shown in Figure 6(c), when the cover 220 is placed at the processing position P2, the cover 220 is positioned with a small gap between it and the tape T. The gap between the cover 220 and the tape T should be small in order to suppress the intrusion of plasma. On the other hand, if the cover 220 and the tape T are in contact, there is a risk of particle generation, so it is preferable to make the gap between the cover 220 and the tape T extremely small.

[0093] Next, a processing gas is supplied to the inside of the processing container 200 from the processing gas supply unit 290. Subsequently, a first RF signal (first RF power) is supplied to the lower electrode 211 from the first RF power supply unit 261, and a second RF signal (second RF power) is supplied to the upper electrode 270 from the second RF power supply unit 272. Then, the processing gas is excited in the plasma processing space inside the processing container 200, and plasma is generated. Ions in the plasma generated in this way are irradiated onto the surface Da of the die D, and the surface Da is modified. As a result, dangling bonds are formed on the surface Da.

[0094] Thus, in this embodiment, by modifying the surface Da of the die D while the moisture content inside the processing container 200 is adjusted, the formation of dangling bonds on the surface Da is promoted. As a result, as will be described later, the bonding strength between the wafer W and the die D to be bonded can be improved.

[0095] During plasma processing, the frame F is protected by the cover 220. Since the frame F is made of, for example, stainless steel, there is a risk of arcing if the frame F is exposed to plasma. In this embodiment, however, since the frame F is protected, such arcing can be suppressed.

[0096] Furthermore, the cover 220 protects the tape T that is exposed between the die D and the frame F. When the tape T is exposed to plasma, it may deteriorate, and organic matter may be generated from the tape T. In this embodiment, however, since the tape T is protected, deterioration of the tape T and the generation of organic matter can be suppressed.

[0097] Furthermore, during plasma processing, the cover 220 functions as an edge ring as described above, and the cover 220 optimizes ion uniformity, enabling good and uniform plasma processing in the central and peripheral parts of the multiple dies D.

[0098] Next, the tape frame P is transported to the transition stage 80 by the transport device 70, and then to the die hydrophilization device 103 by the transport device 50. In the die hydrophilization device 103, for example, pure water is used to attach hydroxyl groups (silanol groups) to the surface Da of the die D modified with St5, thereby hydrophilizing the surface Da. The surface Da is also rinsed with the same pure water (St6 in Figure 8).

[0099] Next, the tape frame P is transported to the transition stage 120 by the transport device 50, and then transported to the joining device 130 by the transport device 110. If joining has already been performed in four joining devices 130, the tape frame P is transported to the buffer device 121 and temporarily stored in the buffer device 121.

[0100] As described above, the wafer W that has undergone St1 to St3 processing is transported to the bonding apparatus 130, and the tape frame P that has undergone St4 to St6 processing is transported to the bonding apparatus 130. In the bonding apparatus 130, as shown in Figure 9(b), the die D held in the tape frame P is detached from the tape frame P and picked up. Furthermore, as shown in Figure 9(c), the surface Da of the picked-up die D and the surface Wa of the wafer W are superimposed, and the die D is pressed to bond the die D to the wafer W (St7 in Figure 8).

[0101] At St7, the surface Wa of wafer W and the surface Da of die D are modified at St2 and St5, respectively. Therefore, van der Waals forces (intermolecular forces) are first generated between the surfaces Wa and Da, and these surfaces Wa and Da are joined together. Furthermore, since the surface Wa of wafer W and the surface Da of die D are hydrophilized at St3 and St6, respectively, the hydrophilic groups between the surfaces Wa and Da form hydrogen bonds (intermolecular forces), and the surfaces Wa and Da are strongly joined together.

[0102] The die D is placed on the wafer W as described above. This process of picking up the die D from the tape T and placing the die D on the wafer W is repeated until multiple dies D are mounted side by side on the wafer W, as shown in Figure 9(d).

[0103] In St7, when all the dies D held in the tape frame P are bonded to the wafer W, the tape frame P is transported to the transition stage 120 by the transport device 110, to the transition stage 60 by the transport device 50, and further transported to the hoop Fp by the transport device 40. On the other hand, if any dies D remain in the tape frame P after St7, the tape frame P remains in the bonding device 130, and the dies D may be bonded to the subsequent wafer W. Alternatively, if any dies D remain in the tape frame P after St7, the tape frame P may be transported to the buffer device 121 by the transport device 110 and temporarily stored in the buffer device 121.

[0104] Meanwhile, in St7, once the die D is bonded to all desired positions on the wafer W, the wafer W is transported by the transport device 110 to the transition stage 120, then by the transport device 50 to the transition stage 60, and further by the transport device 40 to the hoop Fw. In this way, the series of dion wafer manufacturing processes is completed.

[0105] Furthermore, the hoop from which the wafer W and tape frame P are recovered does not necessarily have to be the same hoop that housed the wafer W and tape frame P when they were initially brought in. That is, for example, the hoops that housed the wafer W and tape frame P may each discharge different components, or new hoops or the like for discharging the wafer W and tape frame P may be brought into the processing system 1.

[0106] In conventional dion wafer manufacturing processes, the surface of the die held on the tape frame is not typically modified by plasma. For example, in the aforementioned Patent Document 1, the surface of the die (chip) is modified (activated), but this modification of the die surface is performed before the die is held on the tape. That is, after the die with the modified surface is held on the tape, the die on the tape is picked up and bonded to the wafer (substrate). In this respect, according to this embodiment, the surface Da of the die D held on the tape frame P is modified in St5, so the modification of the surface Da can be performed more efficiently compared to the conventional method. As a result, the throughput of the dion wafer manufacturing process can be improved.

[0107] Furthermore, in the prior art, it is conceivable to modify the surface of the die held in the tape frame by plasma, for example. However, in such a case, since the frame is made of stainless steel, for example, there is a risk that the frame will be exposed to plasma and arc. In this respect, according to this embodiment, the frame F is protected by the cover 220 in St5. Therefore, arcing of the frame F can be suppressed, and damage to the frame F can also be suppressed.

[0108] Furthermore, in conventional technology, for example, the surface of the die held in the tape frame may be modified by plasma, but in such cases, the plasma resistance of the tape is weak, the tape deteriorates, and there is a risk of organic matter being generated from the tape. In this respect, according to this embodiment, in St5, the tape T exposed between the die D and the frame F is protected by the cover 220, so that deterioration of the tape T is suppressed and the generation of organic matter is suppressed.

[0109] Furthermore, in conventional technology, for example, the surface of a die held in a tape frame can be modified by plasma, but in such cases, there is a step between the die and the tape, and also a step between the tape and the frame, making it difficult to make the flow of the processing gas uniform. As a result, there is room for improvement in the uniformity of the plasma processing. In this respect, according to this embodiment, in St5 the cover 220 functions as an edge ring, and the uniformity of ions is optimized by the cover 220. Therefore, good and uniform plasma processing can be performed in the central and peripheral parts of multiple dies D.

[0110] Furthermore, according to this embodiment, the cover 220 is stored inside the processing container 200 and is configured to move up and down between the storage position P1 and the processing position P2 by the third lifting unit 250. Therefore, the cover 220 can be used repeatedly inside the processing container 200, and the surface Da of the die D can be efficiently modified in St5.

[0111] Furthermore, according to this embodiment, in a single modification apparatus 90, both modification of the wafer W surface Wa at St2 and modification of the die D of the tape frame P at St5 are performed. Therefore, the apparatus configuration of the processing system 1 can be simplified, and the equipment cost can be reduced.

[0112] The modification of the wafer surface Wa and the modification of the die D of the tape frame P may be carried out using separate apparatuses.

[0113] In the modification apparatus 90 of the above embodiment, a single cover 220 was used to modify the surface Wa of the wafer W at St2 and the surface Da of the die D of the tape frame P at St5. However, separate covers 220 may be used for the modification of surface Wa and surface Da. For example, the cover 220 used for modifying the surface Wa of the wafer W can be a cover that minimizes the gap between the cover 220 and the wafer W. Also, for example, the cover 220 used for modifying the surface Da of the die D can be a cover that minimizes the gap between the cover 220 and the tape T.

[0114] In the modification apparatus 90 of the above embodiment, a first RF signal (first RF power) is supplied from the first RF power supply unit 261 to the lower electrode 211, and a second RF signal (second RF power) is supplied from the second RF power supply unit 272 to the upper electrode 270 to generate plasma. That is, plasma processing was performed with two frequencies, upper and lower. However, plasma processing with only one frequency at the lower end may also be performed. In this case, the upper electrode 270 is grounded and connected to the ground potential. Then, a first RF signal (first RF power) is supplied from the first RF power supply unit 261 to the lower electrode 211 to generate plasma and perform plasma processing.

[0115] In the modification apparatus 90 of the above embodiment, the cover 220 was stored and raised and lowered between the storage position P1 and the processing position P2 to provide the cover 220 to the tape frame P. However, the method of installing the cover 220 is not limited to this. Two other methods of installing the cover 220 according to other embodiments will be described below.

[0116] First, a method for installing the cover 220 according to another embodiment of the first embodiment will be described. As shown in Figure 10, the processing system 1 that performs the first installation method includes a storage device 400 for storing the cover 220 and a mounting device 410 for mounting the cover 220 onto the tape frame P. The storage device 400 is, for example, provided stacked on a transition stage 80. The mounting device 410 is, for example, provided on a transport device 70. The configuration of the mounting device 410 is arbitrary.

[0117] In such cases, as shown in Figure 11(a), the mounting device 410 retrieves the cover 220 stored in the storage device 400 and mounts the cover 220 onto the tape frame P held by the transport arm 71 of the transport device 70.

[0118] Next, as shown in Figure 11(b), the transport device 70 moves the transport arm 71 into the modification device 90, and the tape frame P with the cover 220 attached is transported to the modification device 90.

[0119] Next, the tape frame P is transferred from the transport arm 71 to the lifter 241 of the second lifting unit 240, and then the lifter 241 is lowered to place the tape frame P on the support unit 210. After that, the surface Da of the die D held by the tape frame P is modified by plasma.

[0120] Next, a method for installing the cover 220 according to a second embodiment will be described. The processing system 1 that performs the second installation method has the storage device 400 shown in Figure 10.

[0121] In such a case, after the tape frame P is supported by the support section 210 in the modification device 90, the transport device 70 retrieves the cover 220 stored in the storage device 400 and transports the cover 220 to the modification device 90 as shown in Figure 12.

[0122] Next, the cover 220 is transferred from the transport arm 71 to the lifter 251 of the third lifting unit 250, and then the lifter 251 is lowered to position the cover 220 at the processing position P2. After that, the surface Da of the die D held in the tape frame P is modified by plasma.

[0123] In either the first or second installation method described above, the cover 220 can be positioned at an appropriate processing position P2 relative to the tape frame P, and the effects of the above embodiment can be enjoyed.

[0124] In the embodiments described above, multiple dies D held on a tape frame P were bonded to a wafer W for mounting, but the method of mounting the dies D to the wafer W is not limited to this. For example, multiple dies D held on a tape frame P may be placed on a carrier C as an object, and then the multiple dies D held on the carrier C may be bonded to the wafer W for mounting.

[0125] As shown in Figure 13, the carrier C has an adsorption surface on its upper surface for holding multiple dies D by electrostatic and vacuum adsorption. The carrier C adsorbs and holds the silicon layer S on the back surface Db side of the die D. The carrier C has a structure in which a substrate M and a holding layer N are laminated.

[0126] The substrate M has approximately the same diameter and thickness as the wafer W on which the die D is mounted, for example, a diameter of 300 mm and a thickness of approximately 800 μm. The substrate M is made of any conductive material, such as silicon, aluminum, aluminum alloy, stainless steel, alumina, zirconia, SiC, or titanium. In other words, a silicon substrate may be used as the substrate M. The substrate M may have approximately the same diameter as the wafer W on which the die D is mounted, but with a different thickness (for example, 500 μm to 1000 μm) than the wafer W.

[0127] The substrate M has a plurality of through-holes H that penetrate in the thickness direction. The plurality of through-holes H can be formed at any position on the adsorption surface of the carrier C. For example, one through-hole H may be formed corresponding to each of the plurality of dies D held by the carrier C, in other words, the same number as the plurality of dies D held by the carrier C. Alternatively, for example, multiple through-holes H may be formed corresponding to each of the plurality of dies D held by the carrier C, in other words, more than the plurality of dies D held by the carrier C.

[0128] Furthermore, while the number, size, spacing, and arrangement of through-holes H are not particularly limited, it is desirable to determine the number, size, and spacing so as to ensure sufficient strength (rigidity) to prevent deformation such as bending in the carrier C. For example, the diameter of the through-holes H is 0.5 mm to 5.0 mm, and the spacing (distance between the centers of adjacent through-holes H) is 0.5 mm to 5.0 mm.

[0129] The retaining layer N is a layer formed on the surface of the substrate M and constitutes the adsorption surface of the die D on the carrier C. The retaining layer N does not have through holes and covers the surface of the substrate M. The thickness of the retaining layer N is sufficient to hold the die D on the carrier C by electrostatic adsorption, for example, several tens of micrometers.

[0130] The retaining layer N is composed of a material that is thermoplastic, flexible, and insulating, such as polyimide or EVA (ethylene vinyl acetate copolymer). In this embodiment, "the retaining layer N is thermoplastic" means that it can flow and soften at a predetermined temperature, for example, 80°C, and be remolded. Furthermore, "the retaining layer N is flexible" means that the elastic modulus of the retaining layer N on the substrate M is 2 GPa or less, preferably 0.5 GPa or less. Furthermore, "the retaining layer N is insulating" means that the dielectric breakdown voltage of the retaining layer N on the substrate M is 30 kV or more, preferably 40 kV or more.

[0131] In this embodiment, the carrier C is configured as described above, and by generating an electrostatic (Coulomb) force between the carrier C and the die D, the die D is adsorbed and held on the adsorption surface.

[0132] Furthermore, in this embodiment, the carrier C has a retaining layer N formed from a flexible material with a low modulus of elasticity. After the die D is placed on the carrier C, and before the die D is adsorbed and held by electrostatic force, a gap is formed between the die D and the retaining layer N. Due to the flexibility of this retaining layer N, when the die D is adsorbed by electrostatic force on the carrier C, the force with which the die D is adsorbed to the retaining layer N causes air to escape from between the die D and the retaining layer N, creating a pseudo-vacuum state between the die D and the retaining layer N. As a result, in addition to electrostatic adsorption by electrostatic force, a vacuum adsorption force formed by the pseudo-vacuum state is generated between the carrier C and the die D, creating a strong retaining state using both electrostatic and vacuum adsorption forces.

[0133] The method of holding the die D with the carrier C is not limited to this embodiment. For example, the die D may be pressed against the carrier C. In this case, pressing the die D against the carrier C allows air to escape from between the die D and the holding layer N, creating a vacuum adsorption force between the die D and the holding layer N, and the die D is adsorbed and held by the carrier C. When pressing the die D against the carrier C, the holding layer N may be heated. In this case, since the holding layer N is thermoplastic, the holding layer N softens, making it easier for the die D to be adsorbed and held by the carrier C. The material of the base material M in the carrier C does not need to be conductive and is optional. Similarly, the material of the holding layer N only needs to be thermoplastic and flexible; it does not need to be insulating and is optional.

[0134] Alternatively, for example, an adhesive sheet may be used for the retaining layer N of the carrier C. In this case, an adhesive force is generated between the die D and the retaining layer N, and the die D is held in place by the carrier C. A heat-release sheet may also be used for the retaining layer N. A heat-release sheet is adhesive at room temperature but peels off when heated. As will be described later, when bonding the die D to the wafer W, the die D is detached from the carrier C. Heating the retaining layer N at this time can make it easier to detach the die D.

[0135] Figure 14 is a schematic diagram illustrating some steps of the dion wafer manufacturing process in this embodiment. In this embodiment, a first processing system (not shown) places a plurality of dies D held on a tape frame P onto a carrier C, and then a second processing system (not shown) bonds and mounts the plurality of dies D held on the carrier C onto a wafer W. The second processing system has the same apparatus configuration as the processing system 1, and the apparatus that processes the dies D held on the tape frame P in the processing system 1 processes the dies D held on the carrier C.

[0136] In the first processing system, as shown in Figure 14(a), a tape frame P holds multiple dies D. As shown in Figure 14(b), a die D is picked up from the tape frame P, and then placed on the carrier C as shown in Figure 14(c). This process of picking up dies D from the tape frame P and placing them on the carrier C is repeated until multiple dies D are arranged side by side on the carrier C, as shown in Figure 14(d).

[0137] In the second processing system, similar to the embodiment described above, the surface Wa of the wafer W is sequentially cleaned (St1), modified (St2), hydrophilized, and rinsed (St3). The surface Da of the die D held on the carrier C is also sequentially cleaned (St4), modified (St5), hydrophilized, and rinsed (St6). While the tape frame P replaces the carrier C in these steps (St4-St6), the actual processing is essentially the same. Afterward, as shown in Figure 14(e), the die D is picked up from the carrier C, and then, as shown in Figure 14(f), the die D is bonded to the wafer W. This process of picking up the die D from the carrier C and placing the die D on the wafer W is repeated, and multiple dies D are bonded to the wafer W to form a single mounted die, as shown in Figure 14(g).

[0138] In this embodiment as well, the modification of the surface Da of the die D held on the carrier C is performed by the modification apparatus 90 described above. That is, after supporting the die D held on the carrier C with the support part 210 (electrostatic chuck 212), the cover 220 is placed at the processing position P2, and the surface of the die D is modified by plasma. In this case, the same effects as in the above embodiment can be enjoyed.

[0139] Next, the configuration of the modification apparatus 90 according to another embodiment will be described. As shown in Figure 15, the modification apparatus 90 according to the other embodiment is provided with a support 500 instead of a support 213, a cover 510 instead of a cover 220, and a lifting unit 520 instead of a second lifting unit 240 and a third lifting unit 250.

[0140] The support 500 is positioned to surround the lower electrode 211 and the electrostatic chuck 212. The support 500 has an annular shape in plan view and is made of an insulating material such as quartz. As shown in Figures 16 and 17, the height of the upper surface of the support 500 is the same as the height of the upper surface of the electrostatic chuck 212. On the upper surface of the support 500, the inner circumferential portion 500b protrudes from the outer circumferential portion 500a, and the inner circumferential portion 500b is positioned above the peripheral edge portion 212b of the electrostatic chuck 212.

[0141] When the support portion 210 supports the tape frame P, the support body 500 supports the frame F. That is, in the tape frame P, the tape T holding the die D is supported by the electrostatic chuck 212, and the frame F is supported by the support body 500. In this case, since the height of the upper surface of the support body 500 and the height of the upper surface of the electrostatic chuck 212 are the same, the tape frame P is supported so that the tape T is flat.

[0142] In one embodiment, as shown in Figure 15, the outer diameter of the support 500 is larger than the outer diameter of the insulator 214.

[0143] The cover 510 is positioned to surround the die D or wafer W of the tape frame P supported by the support portion 210. The cover 510 has an annular shape in plan view and is made of a material that does not attract ions, and is formed of a conductive material or an insulating material, such as quartz or silicon. The cover 510 is configured to be able to move up and down by a third lifting portion 250, which will be described later.

[0144] As shown in Figures 16 and 17, the cover 510 has a substantially rectangular shape in cross-section. A groove 511 for accommodating the frame F is formed on the lower surface of the cover 510. The groove 511 extends in an annular shape along the circumferential direction of the cover 510. In addition, a recess 512 is formed on the lower surface of the cover 510 for inserting the upper end of the second lifter 522 of the lifting section 520 (described later) and positioning the second lifter 522. The recess 512 has a shape that fits the upper end of the second lifter 522, and for example, it has a conical shape.

[0145] As shown in Figure 16, when the support portion 210 supports the tape frame P, the cover 510 descends from a waiting position at the storage position P1 as shown in Figure 16(a), and is positioned on the upper surface of the support 500 at the processing position P2 as shown in Figure 16(b).

[0146] As shown in Figure 16(a), when the cover 510 is placed in the storage position P1, the tape frame P is transferred from the transport arm 71 of the transport device 70 to the first lifter 521 of the lifting section 520, which will be described later.

[0147] As shown in Figure 16(b), when the cover 510 is positioned at the processing position P2, the frame F is housed in the groove 511 of the support 500, and the tape T exposed between the die D of the frame F and the frame F is covered by the cover 510. In this way, the cover 510 covers and protects the frame F and the tape T. Furthermore, at the processing position P2, the cover 510 is positioned in contact with the upper surface of the support 500 on the radially outer side of the groove 511. Therefore, the intrusion of plasma from between the cover 510 and the support 500 is suppressed, further suppressing exposure of the frame F to plasma and thus suppressing arcing.

[0148] Furthermore, at processing position P2, the cover 510 also functions as a so-called edge ring, effectively directing ions only onto the multiple dies D located inside the cover 510 during plasma processing. In other words, the cover 510 optimizes ion uniformity, enabling good and uniform plasma processing at both the central and peripheral parts of the multiple dies D.

[0149] As shown in Figure 17, when the support portion 210 supports the wafer W, the cover 510 descends from its waiting position at the storage position P1 as shown in Figures 17(a) and (b), and is positioned on the upper surface of the support 500 at the processing position P2 as shown in Figure 17(c).

[0150] As shown in Figure 17(a), when the cover 510 is placed in the storage position P1, the wafer W is transferred from the transport arm 71 of the transport device 70 to the lifter 231 of the first lifting unit 230, which will be described later. Subsequently, as shown in Figure 7(b), the lifter 231 is lowered to place the wafer W on the support unit 210.

[0151] As shown in Figure 17(c), when the cover 510 is positioned at the processing position P2, the cover 510 functions as an edge ring as described above, and the cover 510 optimizes the uniformity of ions, enabling good and uniform plasma processing in both the central and peripheral parts of the wafer W.

[0152] As shown in Figures 15 and 18, the lifting unit 520 raises and lowers the frame F relative to the upper surface of the support 500, and also raises and lowers the cover 510 relative to the upper surface of the support 500. In other words, the lifting unit 520 has the function of integrating the second lifting unit 240 and the third lifting unit 250 of the above embodiment. Multiple lifting units 520 are provided on the support 500, for example, in two locations. The two lifting units 520 are arranged facing each other with the support 500 in between. The lifting unit 520 also has a first lifter 521, a second lifter 522, and an actuator 523.

[0153] The first lifter 521 is a substantially columnar member extending in the vertical direction, and is positioned by inserting it through a through hole 501 formed in the thickness direction of the support 500. When the first lifter 521 is raised, its upper end protrudes from the upper surface of the support 500, enabling it to support the frame F. The tape frame P can be transferred between the support part 210 and the transport arm 71 of the transport device 70 using this first lifter 521.

[0154] The second lifter 522 is a substantially columnar member extending in the vertical direction, and is positioned by inserting it through a through hole 502 formed in the thickness direction of the support 500. When the second lifter 522 is raised, it is capable of supporting the cover 510. At this time, the upper end of the second lifter 522 is inserted into the recess 512 of the cover 510, thereby positioning the cover 510. The second lifter 522 allows the cover 510 to be raised and lowered between the storage position P1 and the processing position P2.

[0155] For example, two first lifters 521 and two second lifters 522 are provided. The two second lifters 522 are positioned inside the first lifter 521. Also, the upper end of the second lifters 522 is positioned higher than the upper end of the first lifter 521. In this case, when the cover 510 supported by the second lifters 522 is placed in the storage position P1, the tape frame P can be transferred between the support part 210 and the transport arm 71 of the transport device 70 at the bottom of the cover 510 by the first lifter 521. In other words, the height difference between the upper end of the second lifter 522 and the upper end of the first lifter 521 is set so that the transport arm 71 can enter between the cover 510 and the support 500.

[0156] The actuator 523 drives the first lifter 521 and the second lifter 522 in the vertical direction. The actuator 523 includes, for example, a support member 524 that supports the first lifter 521 and the second lifter 522, and a drive unit 525 that generates a driving force to raise and lower the support member 524, thereby raising and lowering the first lifter 521 and the second lifter 522. The drive unit 525 has, for example, a motor (not shown) as a drive source that generates the above-mentioned driving force.

[0157] In this embodiment as well, the same effects as in the above embodiment can be enjoyed. That is, since the frame F is protected by the cover 510, arcing of the frame F can be suppressed, and damage to the frame F can also be suppressed. In addition, since the tape T exposed between the die D and the frame F is protected by the cover 510, deterioration of the tape T can be suppressed, and the generation of organic matter can be suppressed.

[0158] Furthermore, according to this embodiment, since the lifting unit 520 raises and lowers both the frame F and the cover 510, the device configuration can be simplified compared to the case where separate lifting units are provided. Also, since the height of the upper end of the first lifter 521 and the height of the upper end of the second lifter 522 are fixed, the relative positions of the frame F supported by the first lifter 521 and the cover 510 supported by the second lifter 522 are fixed. As a result, in the storage position P1, the transport arm 71 can enter without contacting the cover 510, etc., and the tape frame P can be appropriately transferred from the transport arm 71 to the first lifter 521.

[0159] In this embodiment, the cover 510 is not fixed to the second lifter 522. As described above, the cover 510 is made of quartz or silicon, and its thickness is small, making it difficult to fix the cover 510 to the second lifter 522. For example, if the cover 510 and the second lifter 522 are fixed with screws, the cover 510 may be damaged. Also, for example, if the two lifting sections 520 cannot be controlled synchronously, the cover 510 supported by the two lifting sections 520 may be damaged. For this reason, it is preferable that the cover 510 is not fixed to the second lifter 522. However, if there is no risk of the cover 510 being damaged as described above, the cover 510 may be fixed to the second lifter 522.

[0160] The modification apparatus 90 of the above embodiment may be provided with a sensor 600 as a position measuring unit for measuring the position of the outer periphery of the cover 510, as shown in Figure 19. In the following description, the case in which the sensor 600 measures the position of the outer periphery of the cover 510 as shown in Figure 15 will be explained, but the sensor 600 may also measure the position of the outer periphery of the cover 220 as shown in Figure 5.

[0161] As shown in Figure 19, the sensor 600 is positioned below the cover 510 and outside the processing container 200. Multiple sensors 600, for example three or more, are provided on the annular cover 510. Above the sensor 600 at the bottom of the processing container 200, a transmissive window 601 is provided to transmit the measurement light La and reflected light Lb from the sensor 600, which will be described later.

[0162] For example, a displacement sensor may be used for the sensor 600. As shown in Figure 19(a), the sensor 600 irradiates the lower outer surface of the cover 510 with measuring light La and receives reflected light Lb from the lower outer surface of the cover 510. Based on the reflected light Lb, the sensor 600 measures the distance to the lower outer surface of the cover 510 and measures the height of the cover 510.

[0163] Furthermore, since plasma is generated in the plasma processing space inside the processing container 200, it is not possible to install a sensor inside the processing container 200, and contact-type or proximity-type sensors cannot be used. Also, since an upper electrode 270 is provided on the top of the processing container 200, it is difficult to use a light-emitting type sensor that has a pair of light-emitting and light-receiving sensors. Moreover, since the cover 510, which is the object to be measured, is made of, for example, quartz, it is also difficult to use a photoelectric sensor. Therefore, a reflective-type displacement sensor is used for the sensor 600 in this embodiment.

[0164] In addition, the multiple sensors 600 also measure the horizontal position of the cover 510. For example, as shown in Figure 19(b), if the cover 510 is positioned horizontally offset from the desired position, the measurement light La emitted from the sensor 600 will not be reflected from the underside of the cover 510, and the sensor 600 will not receive the reflected light Lb. In this case, the sensor 600 will not be able to detect the cover 510, and it will be determined that the horizontal position of the cover 510 is abnormal.

[0165] Here, if the height of the cover 510 is abnormal, or if the horizontal position of the cover 510 is abnormal, that is, if the cover 510 is not in the normal position, the second lifter 522 of the lifting unit 520 may raise or lower the cover 510 to an abnormal position. In such a case, the cover 510 may come into contact with the processing container 200, and the cover 510 or the processing container 200 may be damaged. Also, if the cover 510 is not in the normal storage position P1, the cover 510 and the conveying arm 71 may come into contact when the conveying arm 71 enters the inside of the processing container 200.

[0166] In this embodiment, the multiple sensors 600 measure the outer circumference of the cover 510, thereby measuring the height of the cover 510 and its horizontal position. Based on the measurement results from the multiple sensors 600, the system determines whether the position of the cover 510 is normal or abnormal. Specifically, if at least one of the multiple sensors 600 detects an abnormality in the height or horizontal position of the cover 510, the operation of the second lifter 522 is stopped, and the movement of the transport arm 71 into the processing container 200 is also stopped. As a result, damage to the cover 510 and the processing container 200 can be prevented as described above.

[0167] The measurement timing (monitoring timing) of the cover 510 by multiple sensors 600 is, for example, one of the following two:

[0168] The first measurement timing is when the cover 510 is positioned at the processing position P2, that is, when the second lifter 522 is positioned at the origin. In this case, it is monitored whether the cover 510 is positioned in the appropriate location on the upper surface of the support 500. By confirming that the cover 510 is positioned in the appropriate location on the upper surface of the support 500, the wafer W can be properly subjected to plasma processing.

[0169] The second measurement timing is when the cover 510 is placed in the storage position P1. By confirming that the cover 510 is properly positioned in the storage position P1, it is possible to prevent the cover 510 and the transport arm 71 from coming into contact with each other when the transport arm 71 enters the inside of the processing container 200.

[0170] Furthermore, it is preferable to measure the cover 510 using multiple sensors 600 one sheet at a time for each tape frame P. In this case, the above-mentioned effects can be reliably achieved.

[0171] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0172] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein.

[0173] 90 Modification device 200 Processing container 210 Support part 220 Cover 261 First RF power supply unit 272 Second RF power supply unit 290 Processing gas supply unit D Die Da Surface F Frame P Tape frame T Tape

Claims

1. A modification apparatus for modifying the surface of a die held in a tape frame by plasma, comprising: a processing container; a gas supply unit for supplying a processing gas into the processing container; a plasma generation unit configured to generate plasma of the processing gas in the processing container; and a support unit disposed in the processing container for supporting the tape frame, wherein the tape frame supported by the support unit is provided with a cover disposed so as to surround the die held in the tape frame and for protecting the surface of the frame of the tape frame.

2. The modification apparatus according to claim 1, wherein the cover is stored inside the processing container.

3. The modification apparatus according to claim 1, comprising a first lifting unit for raising and lowering the frame, and a second lifting unit for raising and lowering the cover.

4. The modification apparatus according to claim 3, further comprising a control unit that performs the following actions: a first lifting unit controls the placement of the tape frame on the support unit; and a second lifting unit controls the placement of the cover on the tape frame supported by the support unit to a desired position.

5. The modification apparatus according to claim 1, wherein the modification apparatus modifies the surface of the object on which the die is transferred by plasma, the support portion supports the object, and the cover is arranged to surround the object supported by the support portion.

6. The reforming apparatus according to claim 1, wherein the gas supply unit supplies the humidified processing gas.

7. The modification apparatus according to claim 1, wherein the cover covers the frame supported by the support portion and is positioned in contact with the upper surface of the support portion.

8. The modification apparatus according to claim 1, further comprising a position measuring unit for measuring the position of the outer periphery of the cover.

9. A processing system for processing dies, comprising: a modification device for modifying the surface of the die held in a tape frame with plasma; and a transfer device for transferring the die modified by the modification device to a target object, wherein the modification device comprises: a processing container; a gas supply unit for supplying a processing gas into the processing container; a plasma generation unit configured to generate plasma of the processing gas in the processing container; and a support unit disposed in the processing container for supporting the tape frame, wherein the tape frame supported by the support unit is provided with a cover disposed to surround the die held in the tape frame and for protecting the surface of the frame of the tape frame.

10. The processing system according to claim 9, wherein the cover is stored in the processing container, and the modification device has a first lifting unit for raising and lowering the frame, and a second lifting unit for raising and lowering the cover.

11. The processing system according to claim 9, comprising: a storage device provided outside the modifying device for storing the cover; a mounting device provided outside the modifying device for mounting the cover onto the tape frame; and a transport device for transporting the tape frame between the modifying device and the mounting device, wherein the modifying device has a lifting section for raising and lowering the frame.

12. The processing system according to claim 9, comprising: a storage device provided outside the modifying device for storing the cover; and a transport device for transporting the cover between the modifying device and the storage device, wherein the modifying device comprises: a first lifting unit for raising and lowering the frame; and a second lifting unit for raising and lowering the cover.

13. The processing system according to claim 9, wherein the modification apparatus modifies the surface of the target object with plasma, the support portion supports the target object, and the cover is arranged to surround the target object supported by the support portion.

14. The processing system according to claim 9, wherein the gas supply unit supplies the humidified processing gas.

15. The processing system according to claim 9, wherein the cover covers the frame supported by the support portion and is positioned in contact with the upper surface of the support portion.

16. The processing system according to claim 9, wherein the modification device has a position measuring unit for measuring the position of the outer periphery of the cover.

17. A processing method for processing a die, comprising: modifying the surface of the die held on a tape frame with plasma in a modification device; and transferring the die modified in the modification device to a target object in a transfer device, wherein the modification device comprises: a processing container; a gas supply unit for supplying a processing gas into the processing container; a plasma generation unit configured to generate plasma of the processing gas within the processing container; and a support unit disposed within the processing container for supporting the tape frame, wherein, when modifying the surface of the die in the modification device, the tape frame supported by the support unit is provided with a cover disposed to surround the die held on the tape frame and for protecting the surface of the frame of the tape frame.

18. The processing method according to claim 17, wherein the cover is stored in the processing container, the modification apparatus has a first lifting unit for raising and lowering the frame, and a second lifting unit for raising and lowering the cover, and the processing method comprises: placing the tape frame on the support unit with the first lifting unit; positioning the cover at a desired position relative to the tape frame supported on the support unit with the second lifting unit; and generating plasma of the processing gas with the plasma generation unit to modify the surface of the die held on the tape frame.

19. The processing method according to claim 17, wherein the modification apparatus has a lifting unit for raising and lowering the frame, and the processing method includes: taking out the cover stored in a storage device provided outside the modification apparatus, attaching the cover to the tape frame in a mounting device provided outside the modification apparatus; transporting the tape frame with the cover attached to the modification apparatus by a transport device; placing the tape frame with the cover attached on the support unit by the lifting unit; and generating plasma of the processing gas by the plasma generation unit to modify the surface of the die held on the tape frame.

20. The processing method according to claim 17, wherein the modification apparatus comprises a first lifting unit for raising and lowering the frame and a second lifting unit for raising and lowering the cover, and the processing method comprises: placing the tape frame on the support unit using the first lifting unit; transporting the cover, which is stored in a storage device provided outside the modification apparatus, to the modification apparatus using a transport device; positioning the cover at a desired position relative to the tape frame supported on the support unit using the second lifting unit; and generating plasma of the processing gas using the plasma generation unit to modify the surface of the die held on the tape frame.

21. The processing method according to claim 17, comprising: placing the object on the support portion; arranging the cover so as to surround the object supported on the support portion; and generating plasma of the processing gas with the plasma generation unit to modify the surface of the object with the plasma.

22. The processing method according to claim 17, wherein the processing gas supplied from the gas supply unit is humidified.

23. The processing method according to claim 17, wherein, in the modification apparatus, when modifying the surface of the die held in the tape frame, the cover covers the frame supported by the support and is positioned in contact with the upper surface of the support.

24. The processing method according to claim 17, wherein the modifying device has a position measuring unit for measuring the position of the outer periphery of the cover, and the processing method includes determining whether the position of the cover is normal or abnormal based on the measurement result by the position measuring unit.

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