Method for processing substrate, method for producing semiconductor device, program, and substrate processing device

Abstract

The present invention performs: (a) a step for supplying a film-forming agent to a substrate which is disposed inside a processing chamber; (b) a step for purging the inside of the processing chamber under a first pressure; and (c) a step for purging the inside of the processing chamber under a second pressure which is higher than the first pressure.

Description

Substrate processing method, semiconductor device manufacturing method, program, and substrate processing apparatus.

[0001] This disclosure relates to a substrate processing method, a semiconductor device manufacturing method, a program, and a substrate processing apparatus.

[0002] As part of the manufacturing process for semiconductor devices, a process is sometimes carried out in which a film-forming agent is supplied to a substrate to form a film on the substrate (see, for example, Patent Document 1).

[0003] Japanese Patent Publication No. 2022-085236

[0004] This disclosure provides a technology that can improve the step coverage of a film formed on a substrate.

[0005] According to one aspect of the present disclosure, a technology is provided comprising: (a) a step of supplying a film-forming agent to a substrate placed in a processing chamber; (b) a step of purging the processing chamber under a first pressure; and (c) a step of purging the processing chamber under a second pressure higher than the first pressure.

[0006] According to this disclosure, it is possible to improve the step coverage of a film formed on a substrate.

[0007] Figure 1 is a schematic diagram of a vertical processing furnace of a processing apparatus preferably used in one embodiment of the present disclosure, showing the processing furnace 202 portion in a vertical cross-sectional view. Figure 2 is a schematic diagram of a vertical processing furnace of a processing apparatus preferably used in one embodiment of the present disclosure, showing the processing furnace 202 portion in a cross-sectional view along line A-A in Figure 1. Figure 3 is a schematic diagram of a controller 121 of a processing apparatus preferably used in one embodiment of the present disclosure, showing the control system of the controller 121 in a block diagram. This is a flow diagram showing an example of a gas supply sequence in one embodiment of the present disclosure. This is a flow diagram showing a modified example of a gas supply sequence in one embodiment of the present disclosure. This is a schematic diagram of a vertical processing furnace of a processing apparatus in another embodiment of the present disclosure.

[0008] <An Embodiment of the Disclosure> An embodiment of the disclosure will be described below, mainly with reference to Figures 1 to 4. Note that the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and ratios of the elements do not necessarily correspond between multiple drawings.

[0009] (1) As shown in the configuration diagram 1 of the processing apparatus, the processing furnace 202 of the processing apparatus has a heater 207 as a temperature regulator (heating unit). The heater 207 is cylindrical and is mounted vertically by being supported by a holding plate. The heater 207 also functions as an activation mechanism (activation unit) that activates the gas with heat.

[0010] A reaction tube 203 is arranged concentrically with the heater 207 inside the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz or silicon carbide (SiC) and is formed in a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is formed in a cylindrical shape with open upper and lower ends. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 and is configured to support the reaction tube 203. An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing member. The processing vessel (reaction vessel) is mainly composed of the reaction tube 203 and the manifold 209. In the hollow cylindrical portion of the processing vessel, a region where the wafer 200 as a substrate is placed, i.e., a processing chamber 201, is formed. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate. Processing of the wafer 200 is performed within this processing chamber 201.

[0011] Within the processing chamber 201, nozzles 249a and 249b, which serve as the first and second supply units, are provided so as to penetrate the side walls of the manifold 209. Nozzles 249a and 249b are also referred to as the first and second nozzles, respectively. Nozzles 249a and 249b are made of a heat-resistant material such as quartz or SiC. Gas supply pipes 232a and 232b are connected to nozzles 249a and 249b, respectively. Nozzles 249a and 249b are different nozzles and are provided adjacent to each other.

[0012] The gas supply pipe 232a is equipped with, in order from the upstream side of the gas flow, a mass flow controller (MFC) 241a, which is a flow control unit (flow control unit), a valve 243a, a storage section 240a configured to temporarily store gas, and a valve 242a. Downstream of the valve 242a on the gas supply pipe 232a, the gas supply pipe 232c is connected. The gas supply pipe 232c is equipped with, in order from the upstream side of the gas flow, an MFC 241c and a valve 243c.

[0013] The storage section 240a is configured, for example, as a gas tank with a larger gas capacity than ordinary piping, piping with a larger diameter than ordinary piping, or spiral piping. By opening and closing valve 243a upstream of the storage section 240a and valve 242a downstream of the storage section 240a, the gas supplied from the gas supply pipe 232a can be filled into the storage section 240a, and the gas filled in the storage section 240a can be supplied into the processing chamber 201, respectively. The conductance between the storage section 240a and the processing chamber 201 is, for example, 1.5 × 10⁻⁶. －３ It is preferable to configure it so that the flow rate is m³ / s or more. Furthermore, considering the ratio of the volume of the processing chamber 201 to the volume of the storage section 240a, when the volume of the processing chamber 201 is 100 L (liters), it is preferable that the volume of the storage section 240a be, for example, 100 to 3000 cc, which is, for example, 1 / 1000 to 30 / 1000 times the volume of the processing chamber 201.

[0014] By closing valve 242a and opening valve 243a, the gas whose flow rate has been adjusted by MFC 241a can be filled into the storage section 240a. Once a predetermined amount of gas has been filled into the storage section 240a and the pressure inside the storage section 240a reaches a predetermined pressure, by closing valve 243a and opening valve 242a, the high-pressure gas filled in the storage section 240a can be supplied all at once to the processing chamber 201 in a short time via the gas supply pipe 232a and nozzle 249a (flash supply). Note that valve 243a may be open during flash supply.

[0015] The gas supply pipe 232b is equipped with an MFC 241b and a valve 243b, in order from the upstream side of the gas flow. Downstream of the valve 243b on the gas supply pipe 232b, the gas supply pipe 232d is connected. The gas supply pipe 232d is equipped with an MFC 241d and a valve 243d, in order from the upstream side of the gas flow.

[0016] As shown in Figure 2, nozzles 249a and 249b are provided in the space between the inner wall of the reaction tube 203 and the wafer 200, extending upward in the direction of wafer arrangement of the wafer 200, along the upper part of the inner wall of the reaction tube 203 from the lower part. That is, nozzles 249a and 249b are provided in the region horizontally surrounding the wafer arrangement region, on the side of the wafer arrangement region where the wafers 200 are arranged, and along the wafer arrangement region. Gas supply holes 250a and 250b are provided on the sides of nozzles 249a and 249b, respectively, for supplying gas. Gas supply holes 250a and 250b each open so as to face (oppose) the exhaust port 231a in a plan view, and gas can be supplied. Multiple gas supply holes 250a and 250b are provided extending from the lower to the upper part of the reaction tube 203.

[0017] From the gas supply pipe 232a, the raw material for the film-forming agent is supplied into the processing chamber 201 via the MFC 241a, valve 243a, storage section 240a, valve 242a, and nozzle 249a.

[0018] From the gas supply pipe 232b, the reactant, which acts as a film-forming agent, is supplied into the processing chamber 201 via the MFC 241b, valve 243b, and nozzle 249b.

[0019] Inert gas is supplied from gas supply pipes 232c and 232d into the processing chamber 201 via MFCs 241c and 241d, valves 243c and 243d, gas supply pipes 232a and 232b, and nozzles 249a and 249b, respectively. The inert gas acts as a purge gas, carrier gas, diluent gas, etc.

[0020] The raw material supply system mainly consists of gas supply pipes 232a, MFC 241a, valves 243a and 242a, and storage section 240a. The reactant supply system mainly consists of gas supply pipes 232b, MFC 241b, and valve 243b. The inert gas supply system mainly consists of gas supply pipes 232c and 232d, MFCs 241c and 241d, and valves 243c and 243d. Note that both or either of the raw material supply system and the reactant supply system are also referred to as the film-forming agent supply system.

[0021] Of the various supply systems described above, one or all of them may be configured as an integrated supply system 248, which is comprised of valves 242a, 243a to 243d and MFCs 241a to 241d. The integrated supply system 248 is connected to each of the gas supply pipes 232a to 232d, and the supply operation of various substances (various gases) into the gas supply pipes 232a to 232d, that is, the opening and closing operation of valves 243a to 243d and the flow rate adjustment operation by MFCs 241a to 241d, is controlled by a controller 121, which will be described later.

[0022] An exhaust port 231a for exhausting the atmosphere inside the processing chamber 201 is provided at the lower part of the side wall of the reaction tube 203. As shown in Figure 2, in a plan view, the exhaust port 231a is located opposite the nozzles 249a and 249b (gas supply holes 250a and 250b) with the wafer 200 in between. An exhaust pipe 231 is connected to the exhaust port 231a. A vacuum pump 246, which is a vacuum evacuation device, is connected to the exhaust pipe 231 via a pressure sensor 245, which is a pressure detector (pressure detection unit) for detecting the pressure inside the processing chamber 201, and an APC (Auto Pressure Controller) valve 244, which is a pressure regulator (pressure adjustment unit). The APC valve 244 can be opened and closed while the vacuum pump 246 is operating to evacuate and stop the vacuum evacuation in the processing chamber 201. Furthermore, while the vacuum pump 246 is operating, the valve opening can be adjusted based on the pressure information detected by the pressure sensor 245 to adjust the pressure in the processing chamber 201. The exhaust system (first exhaust system) mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system (first exhaust system).

[0023] Below the manifold 209, a seal cap 219 is provided, which serves as a furnace opening cover capable of airtightly closing the lower end opening of the manifold 209. An O-ring 220b is provided on the upper surface of the seal cap 219, which serves as a sealing member that contacts the lower end of the manifold 209. Below the seal cap 219, a rotating mechanism 267 is installed for rotating the boat 217, which will be described later. The rotating shaft 255 of the rotating mechanism 267 passes through the seal cap 219 and is connected to the boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be raised and lowered vertically by a boat elevator 115, which is a lifting mechanism installed outside the reaction tube 203. The boat elevator 115 is configured as a transport device (transport mechanism) that moves the wafer 200 in and out of the processing chamber 201 by raising and lowering the seal cap 219.

[0024] Below the manifold 209, a shutter 219s is provided as a furnace opening cover that can airtightly close the lower end opening of the manifold 209 when the seal cap 219 is lowered and the boat 217 is removed from the processing chamber 201. An O-ring 220c is provided on the upper surface of the shutter 219s as a sealing member that contacts the lower end of the manifold 209. The opening and closing operation of the shutter 219s (such as lifting and lowering or rotating) is controlled by the shutter opening and closing mechanism 115s.

[0025] The boat 217, which serves as a substrate support, is configured to support multiple wafers 200, for example 25 to 200 wafers 200, in a horizontal position and aligned vertically with their centers aligned, in a multi-stage arrangement, that is, arranged with spacing between them. The boat 217 is made of a heat-resistant material such as quartz or SiC. At the bottom of the boat 217, a multi-stage insulation plate 218, also made of a heat-resistant material such as quartz or SiC, is supported.

[0026] A temperature sensor 263 is installed inside the reaction tube 203 as a temperature detector. By adjusting the amount of power supplied to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 is adjusted to the desired temperature distribution. The temperature sensor 263 is installed along the inner wall of the reaction tube 203.

[0027] As shown in Figure 3, the controller 121, which is the control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, configured as, for example, a touch panel, is connected to the controller 121. An external storage device 123 can also be connected to the controller 121. The processing unit may be configured to have one control unit or multiple control units. That is, the control for performing the processing sequence described later may be performed using one control unit or using multiple control units. Furthermore, the multiple control units may be configured as a control system connected to each other by a wired or wireless communication network, and the entire control system may perform the control necessary to carry out the processing sequence described later. In this specification, the term "control unit" may refer to a single control unit, a plurality of control units, or a control system composed of a plurality of control units.

[0028] The storage device 121c is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. The storage device 121c contains, in a readable format, control programs that control the operation of the processing device, and process recipes that describe the procedures and conditions for substrate processing, as described later. The process recipe functions as a program, combining each procedure in the substrate processing (film deposition, etc.) described later, so that the controller 121 causes the processing device to execute it and obtain a predetermined result. Hereinafter, process recipes and control programs will be collectively referred to simply as "programs" (program products). Similarly, process recipes will be simply referred to as "recipes." In this specification, the term "program" may include only recipes, only control programs, or both. The RAM 121b is configured as a memory area where programs and data read by the CPU 121a are temporarily held.

[0029] The I / O port 121d is connected to the MFCs 241a to 241d, valves 242a, 243a to 243d, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotating mechanism 267, boat elevator 115, shutter opening / closing mechanism 115s, etc.

[0030] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in response to input of operation commands from the input / output device 122. The CPU 121a is configured to control the flow rate adjustment operation of various substances (various gases) by the MFCs 241a to 241d, the opening and closing operation of valves 242a, 243a to 243d, the opening and closing operation of the APC valve 244 and the pressure adjustment operation of the APC valve 244 based on the pressure sensor 245, the starting and stopping of the vacuum pump 246, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment operation of the boat 217 by the rotating mechanism 267, the raising and lowering operation of the boat 217 by the boat elevator 115, and the opening and closing operation of the shutter 219s by the shutter opening and closing mechanism 115s, in accordance with the contents of the read recipe.

[0031] The controller 121 can be configured by installing the above-mentioned program, which is recorded and stored in the external storage device 123, into a computer. The external storage device 123 includes, for example, magnetic disks such as HDDs, optical disks such as CDs, and semiconductor memory such as USB memory and SSDs. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, when the term recording media is used, it may include only the storage device 121c, only the external storage device 123, or both. Note that the program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0032] (2) Processing Steps Using the processing apparatus described above, an example of a processing sequence for processing a substrate as one step in the manufacturing process (manufacturing method) of a semiconductor device, that is, for forming a film on a wafer 200 as a substrate, will be described. In the following description, the operation of each part constituting the processing apparatus is configured to be controllable by the controller 121. The processing apparatus will also be referred to as a substrate processing apparatus or a film formation processing apparatus. The processing method will also be referred to as a substrate processing method or a film formation processing method.

[0033] In this embodiment, the processing sequence includes: (a) step A, supplying raw materials as a film-forming agent to a wafer 200 placed in the processing chamber 201; (b) step B, purging the processing chamber 201 under a first pressure; and (c) step C, purging the processing chamber 201 under a second pressure higher than the first pressure.

[0034] In this embodiment, we will describe the case in step A where the raw material, which is a pressurized film-forming agent filled in the storage section 240a, is supplied into the processing chamber 201.

[0035] In the following, we will describe a case in which, after performing steps A to C described above, (d) step D is performed to supply a reactant as a film-forming agent to the wafer 200 placed in the processing chamber 201, and (e) step E is performed to purge the inside of the processing chamber 201, and the cycle including steps A to E is performed a predetermined number of times (n times, where n is an integer of 1 or 2 or more).

[0036] Furthermore, in the following, an example of performing cycle purging in step B, namely, a cycle including (b1) step B1, which involves supplying an inert gas into the processing chamber 201 while exhausting the processing chamber 201, and (b2) step B2, which involves exhausting the processing chamber 201, is performed a predetermined number of times (m １ times, m １ The following describes the case in which (b) is performed (1 or an integer of 2 or more). Note that (b2) may be performed without supplying inert gas into the processing chamber 201, or (b2) may be performed while supplying inert gas into the processing chamber 201 at a flow rate smaller than the flow rate of inert gas in (b1).

[0037] Furthermore, in the following, an example of performing cycle purging in step C, namely, a cycle including (c1) step C1, which involves supplying an inert gas into the processing chamber 201 while exhausting the processing chamber 201, and (c2) step C2, which involves exhausting the processing chamber 201, is performed a predetermined number of times (m ２ times, m ２ The following describes the case in which (c2) is performed (1 or an integer of 2 or more). Note that (c2) may be performed without supplying inert gas into the processing chamber 201, or (c2) may be performed while supplying inert gas into the processing chamber 201 at a flow rate smaller than the flow rate of inert gas supplied in (c1).

[0038] In this specification, the term "wafer" may refer to the wafer itself or to a laminate of a wafer and a predetermined layer or film formed on its surface. In this specification, the term "surface of the wafer" may refer to the surface of the wafer itself or to the surface of a predetermined layer formed on the wafer. In this specification, when it is stated that "a predetermined layer is formed on the surface of the wafer," it may mean that the predetermined layer is formed directly on the surface of the wafer itself or that the predetermined layer is formed on a layer or other layer already formed on the wafer. In this specification, the term "substrate" has the same meaning as when it is used with the term "wafer."

[0039] In this specification, the terms "agent" and "substance" include at least one of gaseous substances and liquid substances. Liquid substances include mist-like substances. That is, each of the film-forming agents (raw materials, reactants) may contain a gaseous substance, a liquid substance such as a mist-like substance, or both.

[0040] (Wafer Loading and Boat Loading) Once multiple wafers 200 are loaded into the boat 217, the shutter 219s is moved by the shutter opening / closing mechanism 115s, opening the lower end opening of the manifold 209. Then, as shown in Figure 1, the boat 217 supporting the multiple wafers 200 is lifted by the boat elevator 115 and loaded into the processing chamber 201. In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b. In this way, the wafers 200 are prepared in the processing chamber 201.

[0041] (Pressure and Temperature Adjustment) After the boat loading is complete, the processing chamber 201 is evacuated by the vacuum pump 246 to the desired pressure. At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback controlled based on this measured pressure information. The wafer 200 inside the processing chamber 201 is heated by the heater 207 to the desired processing temperature. At this time, the amount of power supplied to the heater 207 is feedback controlled based on the temperature information detected by the temperature sensor 263 to ensure a desired temperature distribution inside the processing chamber 201. The rotation of the wafer 200 by the rotation mechanism 267 is also started. The evacuation of the processing chamber 201, the heating of the wafer 200, and the rotation are all carried out continuously at least until the processing of the wafer 200 is completed.

[0042] (Film Formation Process) After that, steps A, B, C, D, and E are performed in order. In this embodiment, step a1 is performed before step A is performed.

[0043] (Step a1) With valve 242a closed, valve 243a is opened to allow the raw material for the film-forming agent to flow into the gas supply pipe 232a. The flow rate of the raw material is adjusted by MFC 241a and supplied to the storage section 240a. As a result, the storage section 240a is filled with the raw material at the filling pressure. Once the storage section 240a is filled with a predetermined amount of raw material, valve 243a is closed to maintain the state in which the storage section 240a is filled with raw material.

[0044] (Step A) In this step, raw materials are supplied to the wafer 200 in the processing chamber 201.

[0045] Specifically, valve 242a is opened, and the pressurized (high-pressure) raw material filled in the storage section 240a is rapidly flowed (supplied) into the depressurized processing chamber 201. This allows the raw material to be supplied to the wafer 200 all at once (flash supply of raw material). At this time, valve 243a is kept open. At this time, valves 243c and 243d may be opened to supply inert gas into the processing chamber 201 through nozzles 249a and 249b, respectively. At this time, the opening degree of the APC valve 244, which acts as an exhaust valve, is set to substantially fully open. However, at this time, valve 243a may be kept closed.

[0046] Examples of processing conditions when supplying raw materials in this step include: Processing temperature: 250 to 900°C, preferably 650 to 850°C; Processing pressure: 1 to 2666 Pa, preferably 1 to 1333 Pa; Raw material filling pressure: 60 to 1500 Torr, preferably 200 to 1200 Torr; Raw material supply amount: 50 to 3000 cc, preferably 100 to 2000 cc; Raw material supply time: 0.1 to 20 seconds, preferably 0.5 to 5 seconds; Inert gas supply flow rate (per gas supply pipe): 0 to 20 slm.

[0047] In this specification, numerical ranges such as "250 to 900°C" mean that the lower and upper limits are included within that range. For example, "250 to 900°C" means "250°C or more and 900°C or less." The same applies to other numerical ranges. In this specification, processing temperature means the temperature of the wafer 200 or the temperature inside the processing chamber 201, and processing pressure means the pressure inside the processing chamber 201. Processing time means the time during which the processing is continued. When the supply flow rate includes 0 slm, 0 slm means the case in which the substance (gas) is not supplied. These also apply in the following explanations.

[0048] Under the above processing conditions, by supplying a raw material to the wafer 200, at least a part of the molecular structure of the molecules constituting the raw material can be adsorbed on the surface of the wafer 200 to form the first layer. At this time, raw materials (film-forming agents) remain in the flow path for supplying the raw material into the processing chamber 201 (for example, the gas supply pipe 232a, valves 243a and 242a, storage unit 240a, nozzle 249a) and in the processing chamber 201, and substances generated by decomposition of the raw material (hereinafter also referred to as residues of the raw material) remain. The raw materials and their residues remaining in the processing chamber 201 or the like in this way may cause generation of particles (foreign substances) in subsequent film-forming processes, leading to deterioration in the quality of the film and devices formed on the wafer 200. In particular, there is an influence due to the raw material gas and residues remaining in the gas supply pipe 232a between the valve 242a and the processing chamber 201. There is also an influence due to the raw material gas and residues remaining between the gas supply pipe 232a, the connection point of the gas supply pipe 232c, and the valve 242a. In particular, regarding the section between this connection point and the valve 242a, even if an inert gas is supplied from the gas supply pipe 232c in a subsequent purge process, it cannot be completely purged, and in a subsequent supply process of the reaction gas, the remaining raw material gas is supplied to the wafer 200, and a gas-phase reaction occurs between the remaining raw material gas and the reaction gas, leading to deterioration in the quality of the film and devices formed on the wafer 200. Specifically, due to this gas-phase reaction, the step coverage of the film formed on the wafer 200 may deteriorate.

[0049] As the raw material, for example, a halosilane gas containing silicon (Si) as a Group 14 element and a halogen element can be preferably used. The halogen element includes chlorine (Cl), fluorine (F), bromine (Br), iodine (I), etc. As the halosilane gas, for example, a chlorosilane gas containing Si and Cl can be used.

[0050] As the raw material, ４ tetrachlorosilane (SiCl ３ ), monochlorosilane (SiH ２ Cl), dichlorosilane (SiH ２ Cl ３) gases, such as chlorosilane gases, that do not contain Si-Si bonds (i.e., Si-Si bonds) in a single molecule can be used. In addition to chlorosilane gases, other raw materials can be, for example, tetrafluorosilane (SiF ４ ) gas, difluorosilane (SiH ２ F ２ Fluorosilane gases such as ) gas, and tetrabromosilane (SiBr ４ ) gas, dibromosilane (SiH ２ Br ２ Bromosilane-based gases such as ) gas, and tetraiodosilane (SiI ４ ) gas, diiodosilane (SiH ２ I ２ It is also possible to use iodosilane-based gases such as ) gas, which do not contain silicon-silicon bonds (i.e., Si-Si bonds) within a single molecule.

[0051] Furthermore, as a raw material, hexachlorodisilane (Si ２ Cl ６ ) gas, or octachlorotrisilane (Si ３ Cl ８ ) gas, monochlorodisilane (Si ２ H ５ Cl) gas, dichlorodisilane (Si ２ H ４ Cl ２ ) gas, trichlorodisilane (Si ２ H ３ Cl ３ ) gas, tetrachlorodisilane (Si ２ H ２ Cl ４ ) gas, monochlorotrisilane (Si ３ H ５ Cl) gas, dichlorotricilane (Si ３ H ４ Cl ２ A chlorosilane-based gas, such as ) gas, which contains a Si-Si bond (i.e., a Si-Si bond) in one molecule, can be used, i.e., a gas with relatively high thermal decomposition properties.

[0052] In addition to these, other raw materials can also be used, for example, a gas containing Si and an amino group in one molecule, i.e., aminosilane gas. An amino group is a monovalent functional group obtained by removing hydrogen (H) from ammonia, a primary amine, or a secondary amine, and is -NH ２ ,-NHR,-NR ２ It can be expressed as follows. Note that R represents an alkyl group, -NR ２ The two Rs may be the same or they may be different.

[0053] As a raw material, for example, tetrakis(dimethylamino)silane (Si[N(CH ３ ) ２ ] ４ ) gas, tris(dimethylamino)silane (Si[N(CH ３ ) ２ ] ３ H) gas, bis(diethylamino)silane (Si[N(C) ２ H ５ ) ２ ] ２ H ２ ) Gas, bis(tert-butylamino)silane (SiH ２ [NH(C) ４ H ９ )] ２ ) gas, (diisopropylamino)silane (SiH ３ [N(C) ３ H ７ ) ２ ]) Aminosilane gases such as gas can also be used.

[0054] One or more of these can be used as raw materials.

[0055] As an inert gas, nitrogen (N ２ ) gases, or noble gases such as Ar gas, He gas, Ne gas, and Xe gas can be used. One or more of these can be used as the inert gas. This also applies to each step described later.

[0056] After forming the first layer on the surface of the wafer 200, valves 243a and 242a are closed to stop the supply of raw materials into the processing chamber 201.

[0057] (Step B) In this step, steps B1 and B2 below will be carried out in order.

[0058] [Step B1] In this step, an inert gas is supplied into the processing chamber 201.

[0059] Specifically, valves 243c and 243d are opened, and inert gas is introduced into the gas supply pipes 232c and 232d. The flow rate of the inert gas is regulated by MFCs 241c and 241d, supplied into the processing chamber 201 via nozzle 249a, and exhausted through exhaust port 231a. The inert gas acts as a purge gas. At this time, the opening of the APC valve 244 is adjusted to an opening (first opening, for example, fully open) such that the pressure inside the processing chamber 201 becomes the first pressure. In this way, in this step, the processing chamber 201 is exhausted while inert gas is supplied into the processing chamber 201.

[0060] Examples of processing conditions when supplying inert gas in this step include: Processing temperature: 25 to 500°C, preferably 50 to 300°C; Processing pressure (first pressure): 1 to 1330 Pa, preferably 1 to 400 Pa; Processing time: 1 to 120 seconds, preferably 1 to 60 seconds; Inert gas supply flow rate (first flow rate, per gas supply pipe): 0.5 to 10 slm, preferably 1 to 5 slm; Inert gas supply time: 1 to 120 seconds. As described above, the supply flow rate of the inert gas supplied in this step is referred to as the first flow rate.

[0061] By supplying an inert gas into the processing chamber 201 under the processing conditions described above, the processing chamber 201 and the flow path supplying the raw materials into the processing chamber 201 are purged. Here, "purging" refers to the removal of raw material residues, reaction by-products, etc., from the processing chamber 201 by supplying an inert gas into the processing chamber 201.

[0062] [Step B2] After Step B1 is completed, valves 243c and 242d are closed to stop the supply of inert gas into the processing chamber 201. At this time, the opening of the APC valve 244 is kept at the first opening. In this step, the processing chamber 201 is evacuated. In addition, the processing chamber 201 may be evacuated by vacuum in this step. Here, "vacuum evacuation" means removing any residual inert gas, etc., from the processing chamber 201 without supplying inert gas into the processing chamber 201. In addition, the processing chamber 201 may be evacuated in this step without supplying inert gas into the processing chamber 201. Here, "without supplying inert gas" means not supplying purge gas, but carrier gas or a small amount of inert gas may be supplied. In addition, the processing chamber 201 may be evacuated while supplying inert gas into the processing chamber 201 at a flow rate smaller than the inert gas supply flow rate in Step B1. A flow rate smaller than the inert gas supply flow rate in step B1 is, for example, a gas flow rate sufficient to suppress backflow to each nozzle. Preferably, in this step, the processing chamber 201 is evacuated without supplying inert gas into the processing chamber 201. By doing so, the pressure inside the processing chamber 201 is reduced, which promotes the exhaust of the processing chamber 201 and the flow path that supplies the raw material into the processing chamber 201.

[0063] Examples of processing conditions when exhausting in this step include: processing temperature: 25 to 500°C, preferably 50 to 300°C; processing pressure: 1 to 300 Pa, preferably 1 to 200 Pa; processing time: 1 to 120 seconds, preferably 1 to 60 seconds; exhaust time: 1 to 120 seconds.

[0064] By evacuating the processing chamber 201 under the processing conditions described above, inert gases and raw material residues remaining in the processing chamber 201 and in the flow path supplying raw materials to the processing chamber 201 can be removed to the outside of the processing chamber 201. Vacuuming the processing chamber 201 allows for a greater amount of inert gases and raw material residues remaining in the flow path to be removed to the outside of the processing chamber 201. In other words, vacuuming improves the exhaust efficiency of the flow path.

[0065] [Performed a predetermined number of times] The cycle including steps B1 and B2 described above is performed a predetermined number of times (m １ times, m １ By performing this (cycle purging) (where is an integer of 1 or 2 or more), the raw materials and their residues can be efficiently discharged from within the processing chamber 201 and from the flow path that supplies raw materials into the processing chamber 201.

[0066] (Step C) Perform steps C1 and C2 below in order.

[0067] [Step C1] After Step B is completed, an inert gas is supplied into the processing chamber 201.

[0068] Specifically, valves 243c and 243d are opened, and inert gas is introduced into the gas supply pipes 232c and 232d. The flow rate of the inert gas is regulated by MFCs 241c and 241d, supplied into the processing chamber 201 via nozzle 249a, and exhausted from exhaust port 231a. The inert gas acts as a purge gas. At this time, the opening of APC valve 244 is adjusted to a second opening, which is smaller than the first opening. Specifically, the opening of APC valve 244 is adjusted to a state between fully open and fully closed, such that the pressure inside the processing chamber 201 is a second pressure, which is higher than the first pressure. In this way, in this step, inert gas is supplied into the processing chamber 201 while the processing chamber 201 is exhausted.

[0069] Examples of processing conditions when supplying inert gas in this step include: Processing temperature: 25 to 500°C, preferably 50 to 300°C Processing pressure (second pressure): 5 to 3330 Pa, preferably 10 to 1000 Pa Processing time: 1 to 120 seconds, preferably 1 to 60 seconds Inert gas supply flow rate (second flow rate, per gas supply pipe): 0.5 to 10 slm, preferably 1 to 5 slm Inert gas supply time: 1 to 120 seconds. As described above, the supply flow rate of the inert gas supplied in this step is the second flow rate. In this embodiment, the second flow rate and the first flow rate described above are made equal.

[0070] By supplying an inert gas into the processing chamber 201 under the processing conditions described above, the processing chamber 201 is purged.

[0071] [Step C2] After step C1 is completed, valves 243c and 242d are closed to stop the supply of inert gas to the processing chamber 201. At this time, the opening of the APC valve 244 is adjusted to a third opening (for example, fully open), which is greater than the second opening. In this step, the processing chamber 201 is evacuated. In this step, the processing chamber 201 may be evacuated by vacuum. Alternatively, the processing chamber 201 may be evacuated without supplying inert gas to it. Alternatively, the processing chamber 201 may be evacuated while supplying inert gas to it at a flow rate smaller than the inert gas supply flow rate in step C1. A flow rate smaller than the inert gas supply flow rate in step C1 is, for example, a gas flow rate sufficient to suppress backflow to each nozzle. Preferably, the processing chamber 201 is evacuated without supplying inert gas to it in this step. By doing so, the pressure inside the processing chamber 201 is reduced, thereby promoting the exhaust of air from the processing chamber 201.

[0072] Examples of processing conditions when exhausting in this step include: processing temperature: 25 to 500°C, preferably 50 to 300°C; processing pressure: 2 to 2000 Pa, preferably 2 to 1000 Pa; processing time: 1 to 120 seconds, preferably 1 to 60 seconds; exhaust time: 1 to 120 seconds.

[0073] By exhausting the processing chamber 201 under the processing conditions described above, residual inert gas and raw material residues can be removed from the processing chamber 201. Vacuuming the processing chamber 201 allows for the removal of a larger amount of residual inert gas and raw material residues from the processing chamber 201. In other words, vacuuming improves the exhaust efficiency of the processing chamber 201.

[0074] [Performed a predetermined number of times] The cycle including steps C1 and C2 described above is performed a predetermined number of times (m ２ times, m ２By performing this (where is an integer of 1 or 2 or more), raw materials and their residues can be efficiently discharged from the processing chamber 201 (cycle purging). Specifically, in step B, raw materials and their residues can be removed from the flow path (for example, gas supply pipe 232a, valves 243a, 242a, storage section 240a, nozzle 249a) that supplies the film-forming agent (raw material) into the processing chamber 201. In step C, raw materials and their residues can be removed from the processing chamber 201.

[0075] (Step D) After Step C is completed, the reactant is supplied to the wafer 200 in the processing chamber 201 as a film-forming agent.

[0076] Specifically, valve 243b is opened, and the reactant is allowed to flow into the gas supply pipe 232b. The reactant's flow rate is adjusted by MFC 241b, and it is supplied into the processing chamber 201 via nozzle 249b and exhausted from exhaust port 231a. At this time, the reactant is supplied to the wafer 200 (reactant supply). At this time, valves 243c and 243d may be opened to supply inert gas into the processing chamber 201 via nozzles 249a and 249b, respectively. At this time, the opening degree of APC valve 244 is reduced from, for example, the third opening degree (e.g., fully open). Specifically, the opening degree of APC valve 244 is adjusted to a state between fully open and fully closed, such that the pressure in the processing chamber 201 becomes a predetermined processing pressure.

[0077] Examples of processing conditions when supplying the reactants in this step include: Processing temperature: 250 to 900°C, preferably 650 to 850°C; Processing pressure: 1 to 4000 Pa, preferably 1 to 3000 Pa; Reactant supply flow rate: 0.001 to 20 slm, preferably 1 to 10 slm; Reactant supply time: 1 to 120 seconds, preferably 1 to 60 seconds; Inert gas supply flow rate (per gas supply pipe): 0 to 20 slm.

[0078] By supplying the reactant to the wafer 200 under the processing conditions described above, at least a portion of the first layer formed on the wafer 200 reacts with the reactant and is modified. As a result, a second layer, which is a modified layer of the first layer, is formed on the wafer 200.

[0079] As the reactant, for example, a nitrogen (N) and hydrogen (H) - containing gas which is a nitriding gas can be used. The N and H - containing gas is both an N - containing gas and an H - containing gas. The N and H - containing gas preferably has an N - H bond.

[0080] As the reactant, for example, ammonia (NH ３ ) gas, diazene (N ２ H ２ ) gas, hydrazine (N ２ H ４ ) gas, N ３ H ８ gas and other hydrogen nitride - based gases can be used.

[0081] In addition to these, as the reactant, for example, an N, carbon (C) and H - containing gas can also be used. As the N, C and H - containing gas, for example, an amine - based gas or an organic hydrazine - based gas can be used. The N, C and H - containing gas is both an N - containing gas, a C - containing gas, an H - containing gas and an N and C - containing gas.

[0082] As the reactant, for example, monoethylamine (C ２ H ５ NH ２ ) gas, diethylamine ((C ２ H ５ ) ２ NH) gas, triethylamine ((C ２ H ５ ) ３ N) gas and other ethylamine - based gases, monomethylamine (CH ３ NH ２ ) gas, dimethylamine ((CH ３ ) ２ NH) gas, trimethylamine ((CH ３ ) ３ N) gas and other methylamine - based gases, monomethylhydrazine ((CH ３ ) HN ２ H ２ ) gas, dimethylhydrazine ((CH ３ ) ２ N ２ H ２ ) gas, trimethylhydrazine ((CH ３ )２ N ２ (CH ３ )H) gas and other organic hydrazine-based gases can be used.

[0083] As the reactants, one or more of these can be used.

[0084] (Step E) After forming the second layer on the surface of the wafer 200, close the valve 243b and stop the supply of the reactants into the processing chamber 201. Then, purge the inside of the processing chamber 201 according to the same processing procedure and processing conditions as the purge in Step B1. Thereafter, the inside of the processing chamber 201 may be evacuated according to the same processing procedure and processing conditions as the vacuum evacuation in Step B2.

[0085] (Performed a predetermined number of times) By performing a cycle including the above Steps A to E a predetermined number of times (n times, where n is an integer of 1 or more), a film can be formed on the surface of the wafer 200. It is preferable to perform Step a1 before performing Step A. Also, it is preferable to repeat the above cycle a plurality of times. That is, it is preferable to make the thickness of the second layer formed per cycle thinner than the desired film thickness and repeat the above cycle a plurality of times until the film thickness of the film formed by laminating the second layer becomes the desired film thickness.

[0086] (Purge and return to atmospheric pressure) After the formation of a film with a desired thickness on the wafer 200 is completed, an inert gas as a purge gas is supplied into the processing chamber 201 from each of the nozzles 249a and 249b and exhausted from the exhaust port 231a. Thereby, the inside of the processing chamber 201 is purged, and gases, reaction by-products, etc. remaining in the processing chamber 201 are removed from the inside of the processing chamber 201 (purge). Thereafter, the atmosphere inside the processing chamber 201 is replaced with an inert gas, and the pressure inside the processing chamber 201 is returned to normal pressure (atmospheric pressure).

[0087] (Boat Removal and Wafer Removal) The seal cap 219 is then lowered by the boat elevator 115, opening the lower end of the manifold 209. The processed wafers 200 are then removed from the reaction tube 203 through the lower end of the manifold 209, supported by the boat 217. After the boat is removed, the shutter 219s is moved, and the lower end opening of the manifold 209 is sealed by the shutter 219s via the O-ring 220c. After the processed wafers 200 have been removed from the reaction tube 203, they are removed from the boat 217.

[0088] (3) Effects of this embodiment According to this embodiment, one or more of the following effects can be obtained.

[0089] (a) After step A, step B is performed to purge the inside of the processing chamber 201 under a first pressure. This makes it possible to efficiently discharge the film-forming agent and substances generated by the decomposition of the film-forming agent (hereinafter also referred to as film-forming agent residue) from inside the processing chamber 201 and the flow path that supplies the film-forming agent to the processing chamber 201 (for example, the gas supply pipe 232a, valves 243a, 242a, storage section 240a, nozzle 249a). After performing step B, step C is performed to purge the inside of the processing chamber 201 under a second pressure higher than the first pressure. This makes it possible to efficiently discharge the film-forming agent and its residue from inside the processing chamber 201. As a result, by performing the cycle including steps A to E a predetermined number of times, it is possible to improve the step-level coverage of the film formed on the wafer 200.

[0090] (b) In step B, a cycle purge including steps B1 and B2 is performed. This makes it possible to efficiently discharge the film-forming agent and its residue from the processing chamber 201 and the flow channel that supplies the film-forming agent to the processing chamber 201. As a result, it is possible to improve the step coverage of the film formed on the wafer 200.

[0091] Furthermore, in step C, a cycle purge including steps C1 and C2 is performed. This makes it possible to efficiently discharge the film-forming agent and its residue from the processing chamber 201. As a result, it becomes possible to improve the step-level coverage of the film formed on the wafer 200.

[0092] As in this embodiment, cycle purging is performed in both steps B and C. This makes it possible to more efficiently discharge the film-forming agent and its residue from the flow path that supplies the film-forming agent into the processing chamber 201 and from within the processing chamber 201. As a result, it becomes possible to further improve the step-level coverage of the film formed on the wafer 200.

[0093] (c) The pressure inside the processing chamber 201 in step C1 is made higher than the pressure inside the processing chamber 201 in step B1. This makes it possible to efficiently discharge the film-forming agent and its residue from inside the processing chamber 201. As a result, it becomes possible to improve the step-level coverage of the film formed on the wafer 200.

[0094] (d) In step B1, the APC valve 244 is set to a first opening, and in step C1, the APC valve 244 is set to a second opening, which is smaller than the first opening. This makes it possible to effectively adjust the pressure in the processing chamber 201 in steps B and C, and to improve the step coverage of the film formed on the wafer 200.

[0095] (e) In step B1, the APC valve 244 is set to the fully open state. This allows for effective pressure adjustment within the processing chamber 201 in steps B and C, thereby improving the step coverage of the film formed on the wafer 200. Herein, "fully open state" refers to a valve opening of 70 to 100%. In step B1, it is preferable that the APC valve 244 is in a 100% valve opening state (fully open). However, depending on the amount of film-forming agent residue, the configuration of the substrate processing apparatus, etc., the same effect as above may be obtained even if the valve opening is 70% or more but less than 100%.

[0096] (f) In step C1, the APC valve 244 is opened to the second degree, and in step C2, the APC valve 244 is opened to the third degree, which is greater than the first degree. This makes it possible to increase the amount of pressure fluctuation in the processing chamber 201 in step C, and to discharge the film-forming agent and its residue from the processing chamber 201 more efficiently. As a result, it is possible to further improve the step coverage of the film formed on the wafer 200.

[0097] (g) The supply flow rate of the inert gas is controlled in each of steps B1 and C1. This makes it possible to effectively adjust the pressure in the processing chamber 201 in steps B and C, and to improve the step coverage of the film formed on the wafer 200.

[0098] (h) For example, the flow rate of the inert gas supplied into the processing chamber 201 in step B1 (first flow rate) and the flow rate of the inert gas supplied into the processing chamber 201 in step C1 (second flow rate) are made equal. Even in this case, the above-mentioned pressure adjustment in the processing chamber 201 in steps B and C can be performed by making the opening degree of the APC valve 244 of the exhaust system (first exhaust system) different in steps B1 and C1. In other words, it is possible to improve the step coverage of the film formed on the wafer 200 while simplifying the control of the supply flow rate of the inert gas.

[0099] (i) In step A, the pressurized film-forming agent, which is filled in the storage section 240a located on the channel for supplying the film-forming agent to the processing chamber 201, is supplied to the processing chamber 201 all at once (flash supply). In this case, it is possible to improve the characteristics of the film formed on the wafer 200, such as the uniformity of the film thickness within the substrate surface. However, in this case, the film-forming agent is likely to decompose in the channel for supplying the film-forming agent to the processing chamber 201 and in the processing chamber 201, resulting in the generation of film-forming agent residue. Even in this case, by performing steps B and C in this order after step A, the film-forming agent and its residue can be efficiently discharged from the channel for supplying the film-forming agent to the processing chamber 201 and from the processing chamber 201, thereby improving the step-level coverage of the film formed on the wafer 200.

[0100] (j) If the film-forming agent supplied in step A is thermally decomposable, the film-forming agent will decompose in the flow channel supplying the film-forming agent into the processing chamber 201 and in the processing chamber 201, making it easier for residue of the film-forming agent to be generated. Even in this case, by performing steps B and C in this order after step A, the film-forming agent and its residue can be efficiently discharged from the flow channel supplying the film-forming agent into the processing chamber 201 and from the processing chamber 201, making it possible to improve the step-level coverage of the film formed on the wafer 200.

[0101] (k) Film-forming agents containing Group 14 elements and halogen elements have relatively high thermal decomposition properties. For example, film-forming agents containing Si-Si bonds and halogen elements have relatively high thermal decomposition properties. Even when such substances are used as film-forming agents, by performing steps B and C in this order after step A, the film-forming agent and its residue can be efficiently discharged from the flow channel supplying the film-forming agent into the processing chamber 201 and from within the processing chamber 201, thereby improving the step-level coverage of the film formed on the wafer 200.

[0102] (l) The effects described above can also be obtained when a predetermined substance is arbitrarily selected from the various etching gases, reaction gases, and inert gases described above.

[0103] (4) Modified Examples The substrate processing sequence in this embodiment can be modified as shown below. Unless otherwise specified, the processing procedures and processing conditions in each step of each modified example can be the same as the processing procedures and processing conditions in each step of the substrate processing sequence described above.

[0104] (Modification) In the above-described embodiment, the control of the pressure in the processing chamber 201 in steps B and C was described in which the opening degree of the APC valve 244 was made different in each step while maintaining a constant supply flow rate of the inert gas in steps B1 and C1. However, the present disclosure is not limited thereto. For example, the control of the pressure in the processing chamber 201 in steps B and C may be performed by making the supply flow rate of the inert gas different in each step while maintaining a constant opening degree of the APC valve 244 in steps B1 and C1. For example, the control to make the pressure in the processing chamber 201 in step C (second pressure) higher than the pressure in the processing chamber 201 in step B (first pressure) may be performed by making the supply flow rate of the inert gas in step C1 (second flow rate) greater than the supply flow rate of the inert gas in step B1 (first flow rate), while maintaining a constant opening degree of the APC valve 244 in steps B1 and C1 (see Figure 5).

[0105] In this modified example, the same effects as in the above-described embodiment can be obtained. Furthermore, in this modified example, it is possible to improve the step coverage of the film formed on the wafer 200 while simplifying the control of the opening degree of the APC valve 244.

[0106] <Other Aspects of the Disclosure> The aspects of the Disclosure have been described in detail above. However, the Disclosure is not limited to the aspects described above and can be modified in various ways without departing from its essence.

[0107] For example, using the substrate processing apparatus shown in Figure 6, in step B, the processing chamber 201 may be exhausted by a first exhaust system, and in step C, the processing chamber 201 may be exhausted by a second exhaust system different from the first exhaust system. In other words, in steps B and C, exhaust systems with different exhaust capacities may be used. In this embodiment as well, the above-described pressure adjustment can be performed in steps B and C, and the same effects as in the above-described embodiment can be obtained.

[0108] Furthermore, for example, using the substrate processing apparatus shown in Figure 6, in step B, the processing chamber 201 may be exhausted using both the first and second exhaust systems, and in step C, the processing chamber 201 may be exhausted using either the first or second exhaust system. In other words, the number of exhaust systems used may be varied in steps B and C. In this embodiment as well, the above-described pressure adjustment can be performed in steps B and C, and the same effects as in the above-described embodiment can be obtained.

[0109] Furthermore, in the above-described embodiments, N and H-containing gases were used as examples of reaction gases. However, the present disclosure is not limited thereto. For example, ethylene (C ２ H ４ ) gas, acetylene (C ２ H ２ ) Gas, propylene (C ３ H ６ ) Carbon (C)-containing gases such as gas, and diborane (B ２ H ６ ) gas, trichloroborane (BCl ３ ) Boron (B)-containing gases such as gases, and oxygen (O ２ ) gas, ozone (O ３ ) Gas, plasma excited O ２ gas (O ２ ＊ ), O ２ Gas + Hydrogen (H ２ ) Gas, water vapor (H ２ O gas), hydrogen peroxide (H ２ O ２ ) gas, nitrous oxide (N ２ O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO) ２ ) gas, carbon monoxide (CO) gas, carbon dioxide (CO) gas ２ Oxygen (O)-containing gases such as ) gas can be used. Note that in this specification, "O ２ Gas + H ２ The joint listing of two gases, such as "gas," is H ２ Gas and O ２This refers to a mixed gas. When supplying a mixed gas, the two gases may be mixed (premixed) in the supply pipe before being supplied into the processing chamber 201, or the two gases may be supplied separately to the processing chamber 201 from different supply pipes and mixed (postmixed) within the processing chamber 201. One or more of these can be used as the reaction gas. In these cases as well, at least some of the effects described in the above embodiments can be obtained.

[0110] Furthermore, although not specifically described in the above embodiments, a cycle purge may be performed in step E. In this embodiment as well, the same effects as in the above embodiments can be obtained.

[0111] It is preferable that the recipes used for each process be prepared individually according to the processing content, recorded and stored in the storage device 121c via a telecommunications line or external storage device 123. When starting each process, it is preferable that the CPU 121a appropriately selects the appropriate recipe from among the multiple recipes recorded and stored in the storage device 121c according to the processing content. This allows the processing device to perform various processes with good reproducibility on films of various film types, composition ratios, film quality, and film thickness. Furthermore, it reduces the burden on the operator and allows each process to be started quickly while avoiding operational errors.

[0112] The above-mentioned recipes are not limited to newly created ones; they may also be prepared, for example, by modifying existing recipes already installed on the processing unit. When modifying a recipe, the modified recipe may be installed on the processing unit via a telecommunications line or a recording medium on which the recipe is stored. Alternatively, existing recipes already installed on the processing unit may be directly modified by operating the input / output device 122 provided on the existing processing unit.

[0113] The embodiments and modifications described above illustrate examples of film deposition using a batch-type processing apparatus that processes multiple substrates at once. This disclosure is not limited to the embodiments described above and can also be applied to film deposition using a single-wafer processing apparatus that processes one or several substrates at once. Furthermore, the embodiments described above illustrate examples of film deposition using a processing apparatus having a hot-wall type processing furnace. This disclosure is not limited to the embodiments described above and can also be applied to film deposition using a processing apparatus having a cold-wall type processing furnace.

[0114] Even when using these processing devices, each process can be carried out using the same processing procedures and conditions as described above for the embodiments and modifications, and the same effects as described above for the embodiments and modifications can be obtained.

[0115] The above-described embodiments and modifications can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions of the above-described embodiments and modifications.

[0116] 200 Wafers (substrates) 201 Processing room

Claims

1. A substrate processing method comprising: (a) supplying a film-forming agent to a substrate placed in a processing chamber; (b) purging the processing chamber under a first pressure; and (c) purging the processing chamber under a second pressure higher than the first pressure.

2. The substrate processing method according to claim 1, wherein a predetermined number of cycles are performed including (b1) supplying an inert gas to the processing chamber while exhausting the processing chamber, and (b2) exhausting the processing chamber.

3. The substrate processing method according to claim 1, wherein a predetermined number of cycles are performed including (c1) supplying an inert gas to the processing chamber while exhausting the processing chamber, and (c2) exhausting the processing chamber.

4. The substrate processing method according to claim 1, wherein (b) a predetermined number of cycles including (b1) supplying an inert gas to the processing chamber while exhausting the processing chamber, and (b2) exhausting the processing chamber, and (c) a predetermined number of cycles including (c1) supplying an inert gas to the processing chamber while exhausting the processing chamber, and (c2) exhausting the processing chamber.

5. The substrate processing method according to claim 4, wherein the pressure inside the processing chamber in (c1) is made higher than the pressure inside the processing chamber in (b1).

6. The substrate processing method according to claim 4, wherein in (b1), the opening degree of the exhaust valve of the exhaust system that exhausts the processing chamber is set to a first opening degree, and in (c1), the opening degree of the exhaust valve is set to a second opening degree which is smaller than the first opening degree.

7. The substrate processing method according to claim 6, wherein (b1) the exhaust valve is fully open.

8. The substrate processing method according to claim 4, wherein in (c1), the opening degree of the exhaust valve of the exhaust system that exhausts the processing chamber is set to a second opening degree, and in (c2), the opening degree of the exhaust valve is set to a third opening degree which is greater than the second opening degree.

9. The substrate processing method according to claim 4, wherein in (b1), an inert gas is supplied to the processing chamber at a first flow rate, and in (c1), an inert gas is supplied to the processing chamber at a second flow rate.

10. The substrate processing method according to claim 9, wherein the first flow rate and the second flow rate are made equal.

11. The substrate processing method according to claim 9, wherein the second flow rate is greater than the first flow rate.

12. The substrate processing method according to claim 1, wherein (b) the channel through which the film-forming agent is supplied to the processing chamber is purged, and (c) the processing chamber is purged.

13. (a) The substrate processing method according to claim 1, wherein the film-forming agent, which is in a pressurized state and filled in the storage section, is supplied to the processing chamber.

14. The substrate processing method according to claim 1, wherein the film-forming agent is thermally decomposable.

15. The substrate processing method according to claim 1, wherein the film-forming agent comprises a group 14 element and a halogen element.

16. The substrate processing method according to claim 1, wherein the film-forming agent comprises a Si-Si bond and a halogen element.

17. The substrate processing method according to claim 1, wherein in (b), the processing chamber is exhausted by a first exhaust system, and in (c), the processing chamber is exhausted by a second exhaust system different from the first exhaust system.

18. A method for manufacturing a semiconductor device, comprising: (a) supplying a film-forming agent to a substrate placed in a processing chamber; (b) purging the processing chamber under a first pressure; and (c) purging the processing chamber under a second pressure higher than the first pressure.

19. (a) A procedure for supplying a film-forming agent to a substrate placed in a processing chamber; (b) A procedure for purging the processing chamber under a first pressure; (c) A procedure for purging the processing chamber under a second pressure higher than the first pressure; and a program to be executed by a computer on the substrate processing apparatus.

20. A substrate processing apparatus comprising: a film-forming agent supply system for supplying a film-forming agent to a processing chamber in which a substrate is placed; an inert gas supply system for supplying an inert gas to the processing chamber; an exhaust system for exhausting the processing chamber; and a control unit configured to control the film-forming agent supply system, the inert gas supply system, and the exhaust system so as to perform: (a) a process of supplying the film-forming agent to a substrate placed in the processing chamber; (b) a process of purging the processing chamber under a first pressure; and (c) a process of purging the processing chamber under a second pressure higher than the first pressure.

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