Semiconductor package, resin member for semiconductor package, and resin molding material for resin member of semiconductor package

Abstract

This semiconductor package includes a substrate, a circuit member mounted on a main surface of the substrate and including a semiconductor chip component, and a resin member provided around the circuit member on the main surface. The resin member is a molded body including a cured product of a curable resin molding material. The cured product of the resin molding material has a linear expansion coefficient of 10-20 ppm / K and an elastic modulus of 10,000-13,000 MPa.

Description

Semiconductor package, resin member for semiconductor package, and resin molding material for resin member of semiconductor package

[0001] The present disclosure relates to a semiconductor package, a resin member for a semiconductor package, and a resin molding material for a resin member of a semiconductor package.

[0002] In a semiconductor package, a rigid member called a stiffener may be provided at a position surrounding a semiconductor chip component on a substrate (for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2017-126668

[0004] The present disclosure relates to suppressing warpage in a semiconductor package having a resin member that is a molded body including a cured product of a resin molding material.

[0005] This disclosure includes: [1] A semiconductor package comprising: a substrate; a circuit member including semiconductor chip components mounted on the main surface of the substrate; and a resin member provided around the circuit member on the main surface, wherein the resin member is a molded body containing a cured product of a curable resin molding material, and the cured product of the resin molding material exhibits a coefficient of linear expansion of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less. [2] The semiconductor package according to [1], wherein the cured product of the resin molding material exhibits a glass transition temperature of 120°C or more and 170°C or less. [3] The semiconductor package according to [1] or [2], wherein the resin molding material is a thermosetting resin composition containing a thermosetting resin and an inorganic filler. [4] A resin component for semiconductor packaging, comprising a molded article containing a cured resin molding material, wherein the cured resin molding material exhibits a linear expansion coefficient of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less. [5] The resin component for semiconductor packaging according to [4], wherein the cured resin molding material exhibits a glass transition temperature of 130°C or more and 170°C or less. [6] The resin component for semiconductor packaging according to [4] or [5], wherein the resin molding material is a thermosetting resin composition containing a thermosetting resin and an inorganic filler. [7] A resin molding material for a resin component of a semiconductor package, comprising a thermosetting resin and an inorganic filler, wherein the cured resin molding material exhibits a linear expansion coefficient of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less. [8] The resin molding material for resin components of semiconductor packages according to [7], wherein the cured product of the resin molding material exhibits a glass transition temperature of 130°C or higher and 170°C or lower.

[0006] Regarding semiconductor packages having a resin component which is a molded body containing a cured product of a resin molding material, warping can be further suppressed.

[0007] This is a cross-sectional view showing an example of a semiconductor package. This is a perspective view showing an analytical model of a semiconductor package. This is an end view showing an analytical model of a semiconductor package. This is a three-dimensional graph showing the relationship between the predicted value of warpage and CTE and elastic modulus.

[0008] The present invention is not limited to the following examples.

[0009] Figure 1 is a cross-sectional view showing an example of a semiconductor package. The semiconductor package 100 shown in Figure 1 comprises a substrate 1, a circuit member 20 including semiconductor chip components 21 and 22 mounted on the main surface S1 of the substrate 1, a resin member 5 provided around the circuit member 20 on the main surface S1, and an underfill 8 interposed between the circuit member 20 and the substrate 1.

[0010] The resin member 5 is a molded body containing a cured product of a curable resin molding material. The resin member 5 may also be a frame-shaped molded body that surrounds the entire circuit member 20.

[0011] The cured resin molding material used to form the molded body as resin member 5 may exhibit a linear expansion coefficient of 10 ppm / K or more and 20 ppm / K or less. If the linear expansion coefficient of the cured resin molding material is within this range, the occurrence of warping in the semiconductor package can be suppressed. From a similar viewpoint, the linear expansion coefficient of the cured resin molding material may be 11 ppm / K or more, 12 ppm / K or more, 13 ppm / K or more, 14 ppm / K or more, or 15 ppm / K or more, and may be 19 ppm / K or less, 18 ppm / K or less, 17 ppm / K or less, or 16 ppm / K or less.

[0012] In this specification, the coefficient of linear expansion refers to the coefficient of linear expansion in the temperature range below the glass transition temperature. For example, in the thermal expansion curve obtained by thermomechanical analysis of a test specimen of a cured resin molding material under a heating rate of 5°C / min, the average coefficient of linear expansion in the range of 30°C to 260°C can be used as the coefficient of linear expansion of the cured material.

[0013] The cured resin molding material used to form the molded body as the resin member 5 may exhibit an elastic modulus of 10,000 MPa or more and 13,000 MPa or less. When the elastic modulus of the cured resin molding material is within this range, the occurrence of warping in the semiconductor package can be suppressed. In particular, when the cured resin molding material exhibits an elastic modulus of 10,000 MPa or more and 13,000 MPa or less, along with the coefficient of linear expansion described above, warping can be suppressed more effectively. In this specification, elastic modulus refers to the flexural modulus at 25°C, measured by a three-point bending test in accordance with JIS K7171.

[0014] The cured resin molding material or the resin member 5 may exhibit a glass transition temperature of 120°C to 170°C. Having a glass transition temperature within this range can also contribute to reducing warping. From a similar viewpoint, the glass transition temperature of the cured resin molding material or the resin member 5 may be 130°C or higher, 160°C or lower, 150°C or lower, or 140°C or lower. The glass transition temperature here can be a value determined by thermomechanical analysis under a heating rate of 5°C / min.

[0015] The resin molding material may be a thermosetting resin composition containing a thermosetting resin and an inorganic filler. The thermosetting resin composition may further contain additives. By appropriately selecting the types and mixing ratios of the thermosetting resin, inorganic filler, and additives, the coefficient of linear expansion, elastic modulus, and glass transition temperature of the cured product can be adjusted to fall within a predetermined range.

[0016] Thermosetting resins are compounds that form crosslinked polymers by reaction with a curing agent upon heating and / or by self-polymerization, and examples include epoxy resins. A thermosetting resin composition as a resin molding material may further contain a curing agent for the thermosetting resin. Inorganic fillers may include, for example, silica particles. The content of inorganic fillers in the resin molding material (thermosetting resin composition) may be, for example, 65% by mass or more and 85% by mass or 70% by mass or more and 80% by mass or less, based on the mass of the resin molding material (thermosetting resin composition).

[0017] The resin member 5 can be formed using a resin molding material by a conventional molding method such as compression molding. The resin member 5 may be formed before the circuit member 20 is mounted on the substrate 1, or it may be formed after the circuit member 20 is mounted on the substrate 1.

[0018] The substrate 1 is a wiring board having a rectangular main surface S1 and including wiring connected to the circuit member 20, and is sometimes referred to as a package substrate. The substrate 1 may be, for example, a wiring board having a plate-shaped core material including a fiber base material and an insulating resin, and build-up layers including wiring provided on both sides of the core material. The substrate 1 may have connection pads connected to the wiring in the build-up layer. The substrate 1 may have solder resist provided around the electrodes (connection pads). Conductive through-holes penetrating the core material may be provided.

[0019] The thickness of the substrate 1 may be, for example, 0.1 mm or more and 5 mm or less. The length of at least two of the four sides that constitute the rectangular main surface S1 of the substrate 1 may be, for example, 10 mm or more and 300 mm or less.

[0020] In the example shown in Figure 1, the circuit member 20 is a sealing structure having an interposer 3, a plurality of semiconductor chip components 21 and 22 provided on the interposer 3, and a sealing layer 4 that seals the semiconductor chip components 21 and 22 on the interposer 3. Part or all of the semiconductor chip components 21 and 22 are embedded in the sealing layer 4. The semiconductor chip components 21 and 22 may be exposed on the side opposite to the substrate 1. The configuration of the circuit member 20 can be arbitrarily changed according to the design, etc. For example, the circuit member 20 may include one or more bare chips and may be semiconductor chip components without a sealing layer.

[0021] The relationship between the bending modulus and coefficient of thermal expansion of the resin component and the amount of warpage was verified using three-dimensional structural analysis for the analysis model of the semiconductor package. Figure 2 is a perspective view showing the analysis model of the semiconductor package, and Figure 3 is an end view of the semiconductor package shown in Figure 2. The semiconductor package 100 shown in Figures 2 and 3 is a 1 / 4 symmetric model and mainly consists of substrates 1A and 1B, chips 2A, 2B, 2C, and 2D, an interposer 3, a sealing layer 4, a resin component 5, and an underfill 8. Details of each component are as follows. Substrate 1A, 1B (Size: 100mm x 100mm, Thickness: 1.6mm, Ball 9 diameter: 600μm, Ball 9 pitch: 1mm) Chip 2A (Size: 21.9mm x 21.9mm, Thickness: 675μm) Chip 2B (Size: 10mm x 8mm, Thickness: 675μm) Chip 2C (Size: 50mm x 11mm, Thickness: 675μm) Chip 2D (Size: 23mm x 4mm, Thickness: 675μm) Interposer 3 (Size: 50mm x 50mm, Thickness: 200μm) Resin component 5 (Width Wx, Wy: 25mm, Thickness: 2mm)

[0022] Table 1 shows the values ​​of the elastic modulus and coefficient of thermal expansion (CTE) used in the three-dimensional structural analysis for the chips 2A, 2B, 2C, and 2D, the interposer 3, and the sealing layer 4. The elastic modulus values ​​in the table are those at 25°C.

[0023]

[0024] Substrates 1A and 1B are 4-2-4 package substrates having a core material containing copper foil, a build-up layer, and a solder resist. The values ​​of the flexural modulus and coefficient of thermal expansion (CTE) used in the three-dimensional structural analysis for substrates 1A and 1B are shown in Table 2. X, Y, and Z in Table 2 correspond to X, Y, and Z in Figure 2.

[0025]

[0026] The parameters for each of the above components, as well as for resin component 5, were set within the range of a flexural modulus of 10,000 to 25,000 MPa, a coefficient of linear expansion of 10 to 20 ppm / K, and a glass transition temperature (Tg) of 120 to 170°C. Three-dimensional structural analysis was then performed at each level using the experimental design method. In the three-dimensional structural analysis, the stress-free temperature was set to 150°C, which corresponds to the molding temperature of the sealing layer. The temperature was changed in the order of (i) 150°C, (ii) 25°C, (iii) 260°C (reflow temperature), and (iv) 25°C, and the amount of warpage at each temperature was calculated.

[0027] Table 3, Example 1, shows calculation examples for combinations of CTE, Tg, and elastic modulus that exhibit particularly small amounts of warping. Example 2 shows calculation examples for three-dimensional structural analysis when the Tg of the resin member is 180°C.

[0028]

[0029] Based on the results of the three-dimensional structural analysis, the following formula was obtained to predict the amount of warpage after molding from the elastic modulus [MPa], CTE [ppm / K], and Tg [°C] of the resin member. Warpage (predicted value, μm) = -53.4939349 + 0.0064343682 × modulus of elasticity + 9.532361617 × CTE - 0.054267621 × Tg + (modulus of elasticity - 17265.625) × {(CTE - 14.84375) × 0.001954} + (CTE - 14.84375) × {(CTE - 14.84375) × 1.2693395436} + (modulus of elasticity - 17265.625) × {(Tg - 144.25) × (-0.000082427)} +(CTE-14.84375)×{(Tg-144.25)×(-0.11352)}

[0030] Figure 4 is a three-dimensional graph showing the relationship between the predicted amount of warpage calculated from the above formula and the CTE and modulus of elasticity when the Tg of the resin member is 120°C. It was confirmed that a sufficiently small amount of warpage can be observed when the CTE of the resin member is in the range of 10 to 20 ppm / K and the modulus of elasticity is in the range of 10,000 to 13,000 MPa.

[0031] 1, 1A, 1B... Substrate, 2A, 2B, 2C, 2D... Chip, 3... Interposer, 4... Encapsulation layer, 5... Resin component, 8... Underfill, 20... Circuit component, 21, 22... Semiconductor chip component, 100... Semiconductor package.

Claims

1. A semiconductor package comprising: a substrate; a circuit member including semiconductor chip components mounted on the main surface of the substrate; and a resin member provided around the circuit member on the main surface, wherein the resin member is a molded body containing a cured product of a curable resin molding material, and the cured product of the resin molding material exhibits a coefficient of linear expansion of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less.

2. The semiconductor package according to claim 1, wherein the cured product of the resin molding material exhibits a glass transition temperature of 120°C or higher and 170°C or lower.

3. The semiconductor package according to claim 1 or 2, wherein the resin molding material is a thermosetting resin composition comprising a thermosetting resin and an inorganic filler.

4. A resin component for semiconductor packaging, comprising a molded article containing a cured resin molding material, wherein the cured resin molding material exhibits a coefficient of linear expansion of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less.

5. The resin component for semiconductor packaging according to claim 4, wherein the cured product of the resin molding material exhibits a glass transition temperature of 130°C or higher and 170°C or lower.

6. The resin component for semiconductor packaging according to claim 4 or 5, wherein the resin molding material is a thermosetting resin composition comprising a thermosetting resin and an inorganic filler.

7. A resin molding material for resin components of semiconductor packages, comprising a thermosetting resin and an inorganic filler, wherein the cured product of the resin molding material exhibits a coefficient of linear expansion of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less.

8. The resin molding material for a resin component of a semiconductor package according to claim 7, wherein the cured product of the resin molding material exhibits a glass transition temperature of 130°C or higher and 170°C or lower.

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