Method for selecting substrate film, dicing die-attach integrated film, and method for manufacturing semiconductor device

Abstract

This method for selecting a substrate film used for a dicing die-attach integrated film includes: a step for preparing, as a test piece A, a rectangular substrate film having a length defined by the transverse direction of 100 mm, a width of 10 mm, and a thickness of 20-200 μm; a step for stretching the test piece A 150% in the transverse direction under conditions of an inter-chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, and measuring the difference A between the maximum width and minimum width of the test piece A after stretching; and a step for selecting a substrate film for which the difference A is 2 mm or less.

Description

Method for selecting substrate films, integrated dicing and die bonding films, and method for manufacturing semiconductor devices

[0001] This disclosure relates to a method for sorting a substrate film, a dicing-die bonding integrated film, and a method for manufacturing a semiconductor device.

[0002] Semiconductor devices are manufactured through the following processes. First, a dicing process is performed with a dicing adhesive film attached to the wafer. Subsequently, processes such as expansion, pickup, and die bonding are carried out.

[0003] In the manufacturing process of semiconductor devices, a dicing-die bonding integrated film is sometimes used, which integrates a dicing film having a base film and an adhesive layer with a die bonding film for bonding to a substrate or other semiconductor chips. The dicing-die bonding integrated film is used, for example, as follows: First, the die bonding film (adhesive layer) side of the dicing-die bonding integrated film is attached to a wafer. Next, the wafer is diced while it is fixed with a dicing ring. This separates the wafer into numerous chips. Subsequently, the adhesive strength of the adhesive layer to the die bonding film is reduced by irradiating the adhesive layer with ultraviolet light, and then the chips are picked up from the adhesive layer along with the die bonding film pieces that have been separated from the die bonding film. After that, the semiconductor device is manufactured by mounting the chips to a substrate or the like via the die bonding film pieces. The laminate consisting of the chips obtained through the dicing process and the die bonding film pieces attached to them is called a chip with die bonding film pieces.

[0004] Blade dicing, which involves cutting the wafer and die bonding film using a blade or the like, is a widely known method for dicing wafers and die bonding films. On the other hand, in recent years, with the increasing integration of semiconductor packages and the thinning of wafers, stealth dicing is becoming increasingly popular (see Patent Documents 1 and 2). Stealth dicing is a method in which a modified region is formed inside the wafer as a cutting line using a laser, and then the wafer and die bonding film are cut along the cutting line to obtain a chip with a die bonding film attached.

[0005] Japanese Patent Publication No. 2002-192370 Japanese Patent Publication No. 2003-338467

[0006] In the manufacturing process of semiconductor devices, when a modified region is formed on a wafer by stealth dicing to separate the wafer and die bonding film, expansion under cooling conditions (e.g., below 0°C) (hereinafter sometimes referred to as "cooled expansion") may be performed. However, when cooled expansion is performed, the stretch of the base film constituting the dicing film may be insufficient, and necking may easily occur in the base film. If a dicing film with a base film prone to necking is used, the stretchability of the integrated dicing-die bonding film becomes uneven between the edges and the center of the wafer, making it difficult to separate the die bonding film. If the die bonding film is not easily separated, it becomes difficult to pick up chips with pieces of die bonding film attached, which may reduce the yield in the manufacturing of semiconductor devices.

[0007] This disclosure has been made in view of the above circumstances and aims to provide a method for selecting a substrate film to obtain a dicing-die bonding integrated film with good interlocking properties during cooling and expanding. Furthermore, this disclosure aims to provide a dicing-die bonding integrated film with good interlocking properties during cooling and expanding. Furthermore, this disclosure aims to provide a method for manufacturing a semiconductor device using the dicing-die bonding integrated film.

[0008] To solve the above problems, this disclosure provides a method for sorting a substrate film, a dicing-die bonding integrated film, and a method for manufacturing a semiconductor device.

[0009] [1] A method for selecting a base film for a dicing-die bonding integrated film, comprising the steps of: preparing a rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with TD as the long side, as a test piece A; stretching the test piece A to 150% on TD under conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, measuring the difference A between the maximum width and minimum width of the test piece A after stretching; and selecting base films in which the difference A is 2 mm or less. [2] The method for selecting a base film according to [1] above, further comprising the steps of: preparing a rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with the MD as the long side, as a test piece B; stretching the test piece B by 150% along the MD under the conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, measuring the difference B between the maximum width and the minimum width of the stretched test piece B; and selecting base films in which the difference B is 2 mm or less. [3] The method for selecting a base film according to [2] above, further comprising the step of selecting base films in which the absolute value of the difference between the difference A and the difference B (difference A - difference B) is 0.0 mm or more and 1.3 mm or less. [4] A dicing-die bonding integrated film comprising a base film and a dicing film including an adhesive layer provided on the base film, and an adhesive layer made of a die bonding film disposed on the adhesive layer of the dicing film, wherein the base film satisfies the following condition (1): (1) A rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with TD as the long side, is prepared as a test piece A, and when the test piece A is stretched 150% toward TD under the conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, the difference A between the maximum width and minimum width of the test piece A after stretching is 2 mm or less. [5] The dicing-die bonding integrated film according to [4] above, further satisfying the following condition (2).(2) A rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with MD as the longer side, is prepared as test piece B. When test piece B is stretched 150% along MD under the conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, the difference B between the maximum width and minimum width of test piece B after stretching is 2 mm or less. [6] The dicing-die bonding integrated film described in [5] above, which further satisfies the conditions of (3) below. (3) The absolute value of the difference between the above difference A and the above difference B (difference A - difference B) is 0.0 mm or more and 1.3 mm or less. [7] A method for manufacturing a semiconductor device, comprising the steps of: preparing a laminate having a dicing-die bonding integrated film as described in any of [4] to [6] above, and a wafer or a plurality of chips obtained by fragmenting a wafer, which include a dividing starting point for dividing into a plurality of chips, disposed on the adhesive layer of the dicing-die bonding integrated film; expanding the dicing film of the laminate under cooling conditions to fragment the die bonding film, thereby producing a chip with die bonding film pieces having the chips and die bonding film pieces from which the die bonding film has been fragmented; picking up the chip with die bonding film pieces from the adhesive layer of the dicing-die bonding integrated film; and mounting the picked-up chip with die bonding film pieces onto a substrate or another chip.

[0010] This disclosure provides a method for selecting a substrate film to obtain a dicing-die bonding integrated film with good interlocking properties during cooling and expanding. Furthermore, this disclosure provides a dicing-die bonding integrated film with good interlocking properties during cooling and expanding. Finally, this disclosure provides a method for manufacturing a semiconductor device using the dicing-die bonding integrated film.

[0011] Figure 1 is a schematic cross-sectional view showing one embodiment of a dicing-die bonding integrated film. Figure 2 is a schematic cross-sectional view showing one aspect of a semiconductor device manufacturing method, where Figures 2(a), 2(b), and 2(c) are schematic cross-sectional views showing each step. Figure 3 is a schematic cross-sectional view showing one aspect of a semiconductor device manufacturing method, where Figures 3(a) and 3(b) are schematic cross-sectional views showing each step.

[0012] Embodiments of the present disclosure will be described below with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative relationships of the sizes of the components are not limited to those shown in each figure.

[0013] The same applies to numerical values ​​and their ranges in this specification, and does not limit this disclosure. Numerical ranges indicated using “~” in this specification include the numerical values ​​before and after “~” as the minimum and maximum values, respectively. In numerical ranges described in steps in this specification, the upper or lower limit of one numerical range may be replaced by the upper or lower limit of another numerical range described in steps. Also, in numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced by the values ​​shown in the examples.

[0014] In this specification, "(meth)acrylic acid" means at least one of acrylic acid and its corresponding methacrylic acid. The same applies to other similar expressions such as "(meth)acryloyl." "A or B" means that either A or B is included, or both are included. Unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more. The content of each component in the composition means the total amount of any multiple substances present in the composition, unless otherwise specified, if there are multiple substances corresponding to each component in the composition.

[0015] (Method for selecting base film) In one embodiment of the method for selecting base film according to this embodiment, the method includes the steps of: preparing a rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with TD as the long side, as a test piece A; stretching the test piece A to TD by 150% under the conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, and measuring the difference A between the maximum width and minimum width of the test piece A after stretching; and selecting base films in which the difference A is 2 mm or less. The difference A represents the degree of necking (amount of necking) of the test piece A stretched under the above conditions. The maximum and minimum widths of the test piece A after stretching may be, for example, the maximum and minimum widths of the widths at three points after stretching, at 35 mm, 50 mm, and 65 mm from the end of the long side of the test piece A before stretching. TD (Transverse Direction) is the direction perpendicular to MD (Machine Direction), while MD is the direction parallel to the longitudinal direction (flow direction) in the raw material that provides the base film.

[0016] A dicing-die bonding integrated film having a base film selected by the base film selection method according to this embodiment exhibits good detachability of the die bonding film during cooling and expansion. This effect is presumed to be achieved because the base film selected by the base film selection method according to this embodiment is less prone to necking, and the stretchability of the dicing-die bonding integrated film having the base film becomes uniform at the edges and center of the wafer during cooling and expansion.

[0017] The thickness of test specimen A may be 40 to 150 μm, 60 to 130 μm, or 80 to 100 μm, as long as it is a thickness that does not pose a practical problem. The thickness of test specimen A may be the same as the thickness of the base film used when actually producing the dicing-die bonding integrated film.

[0018] From the viewpoint of making it easier to obtain a dicing-die bonding integrated film with superior divisibility during cooling and expanding, difference A may be 1.7 mm or less, 1.5 mm or less, 1.2 mm or less, or 1.0 mm or less, and from the same viewpoint as above, it may be 0.2 mm or more, 0.3 mm or more, or 0.4 mm or more. From these viewpoints, difference A may be 0.2 mm or more and 2.0 mm or less, 0.3 mm or more and 1.7 mm or less, 0.4 mm or more and 1.5 mm or less, 0.4 mm or more and 1.2 mm or less, or 0.4 mm or more and 1.0 mm or less.

[0019] In one embodiment of the method for selecting a base film according to this embodiment, from the viewpoint of making it easier to obtain a dicing-die bonding integrated film with superior detachability during cooling and expanding, the method may further include the steps of: preparing a rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with the MD as the long side; stretching the test piece B by 150% along the MD under the conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, and measuring the difference B between the maximum width and minimum width of the test piece B after stretching; and selecting base films in which the difference B is 2 mm or less. The difference B represents the degree of necking (amount of necking) of the test piece B stretched under the above conditions.

[0020] The thickness of test specimen B may be 40 to 150 μm, 60 to 130 μm, or 80 to 100 μm, as long as it is a thickness that does not pose a practical problem. The thickness of test specimen B may be the same as the thickness of the base film used when actually producing the dicing-die bonding integrated film.

[0021] From the viewpoint of making it easier to obtain a dicing-die bonding integrated film with even better divisibility during cooling and expanding, difference B may be 1.7 mm or less, 1.5 mm or less, 1.2 mm or less, 1.0 mm or less, or 0.7 mm or less, and from the same viewpoint as above, it may be 0.2 mm or more, 0.3 mm or more, or 0.4 mm or more. From these viewpoints, difference B may be 0.2 mm or more and 2.0 mm or less, 0.3 mm or more and 1.7 mm or less, 0.4 mm or more and 1.5 mm or less, 0.4 mm or more and 1.2 mm or less, 0.4 mm or more and 1.0 mm or less, or 0.4 mm or more and 0.7 mm or less.

[0022] In one embodiment of the method for selecting a base film according to this embodiment, a step may be further included in which a base film is selected in which the absolute value of the difference between difference A and difference B (difference A - difference B) is 0.0 mm or more and 1.3 mm or less, from the viewpoint of making it easier to obtain a dicing and die bonding integrated film that has even better divisibility during cooling and expanding.

[0023] The absolute value of difference A - difference B may be 0.0 mm to 1.2 mm, 0.0 mm to 1.0 mm, 0.0 mm to 0.5 mm, or 0.0 mm to 0.25 mm, from the viewpoint of making it easier to obtain a dicing-die bonding integrated film that is particularly excellent in terms of detachability during cooling and expanding.

[0024] (Dicing and Die Bonding Integrated Film) The dicing and die bonding integrated film according to this embodiment comprises a dicing film including a base film and an adhesive layer provided on the base film, and an adhesive layer made of a die bonding film disposed on the adhesive layer of the dicing film, wherein the base film satisfies the following condition (1). (1) A rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with TD as the long side, is prepared as a test piece A, and when the test piece A is stretched to TD by 150% under the conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, the difference A between the maximum width and minimum width of the test piece A after stretching is 2 mm or less.

[0025] The dicing-die bonding integrated film according to this embodiment exhibits good detachability of the die bonding film during cooling and expanding. Therefore, the dicing-die bonding integrated film according to this embodiment can also be used in a semiconductor device manufacturing method that includes a step of producing chips with die bonding film pieces by cooling and expanding the dicing film to separate the die bonding film. The reason why the above effect is obtained is presumed to be that the base film satisfying the above condition (1) is less prone to necking, and the stretchability of the dicing-die bonding integrated film having the base film becomes uniform at the edges and center of the wafer during cooling and expanding.

[0026] Figure 1 is a schematic cross-sectional view showing one embodiment of a dicing-die bonding integrated film. The dicing-die bonding integrated film 10 shown in Figure 1 comprises a dicing film 5 including a base film 3 and an adhesive layer 2 provided on the base film 3, and a die bonding film 1 (hereinafter sometimes referred to as the "adhesive layer") disposed on the adhesive layer 2 of the dicing film 5.

[0027] The thickness of the dicing-die bonding integrated film 10 (the sum of the thickness of the dicing film 5 and the thickness of the die bonding film 1) may be, for example, 22 to 380 μm.

[0028] <Dicing Film> The dicing film 5 shown in Figure 1 comprises a base film 3 and an adhesive layer 2 provided on the base film 3. The base film 3 has, for example, a rectangular main surface. The main surface of the adhesive layer 2 may be the same size as the main surface of the die bonding film 1.

[0029] The thickness of the dicing film 5 (the sum of the thickness of the base film 3 and the thickness of the adhesive layer 2) may be 21 to 230 μm, 60 to 150 μm, or 70 to 130 μm, from the viewpoint of economy and ease of handling of the film.

[0030] [Base film] The base film 3 is a base film that satisfies the conditions of (1) above. Such a base film may be a base film selected by the base film selection method of the above embodiment.

[0031] The base film 3 may be a base film that, in addition to the conditions in (1) above, further satisfies the following conditions (2), from the viewpoint of making it easier to obtain a dicing-die bonding integrated film with superior detachability during cooling and expanding. (2) A rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with MD as the long side, is prepared as a test piece B. When the test piece B is stretched 150% along MD under the conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, the difference B between the maximum width and minimum width of the test piece B after stretching is 2 mm or less.

[0032] The base film 3 may be a base film that satisfies the following condition (3) in addition to the conditions (1) and (2) above, from the viewpoint of making it easier to obtain a dicing and die bonding integrated film with even better detachability during cooling and expanding. (3) The absolute value of the difference between difference A and difference B (difference A - difference B) is 0.0 mm or more and 1.3 mm or less.

[0033] The resin constituting the base film 3 is a homopolymer of olefins such as ethylene, propylene, butene, hexene, methylpentene, 4-methyl-1-pentene, vinyl acetate, and copolymers thereof; polyesters such as polyethylene terephthalate and polyethylene naphthalate; ethylene copolymers such as ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, and ethylene-(meth)acrylic acid-(meth)acrylic acid ester copolymer; and copolymers containing olefins such as ethylene and (meth)acrylic acid, wherein the acid portion and metal i Examples include ionomer resins having an ionic crosslinking structure through salt formation with ions (sodium ions, zinc ions, etc.); engineering plastics such as polycarbonate, polyamide, polyimide, polyetheretherketone, polyetherimide, fully aromatic polyamide, and polyphenyl sulfide; aramid (paper); glass; glass cloth; fluororesins; chlorine-based resins such as polyvinyl chloride and polyvinylidene chloride; cellulose-based resins; silicone-based resins; or mixtures of these resins mixed with plasticizers, or cured products obtained by crosslinking these resins by irradiation with an electron beam. The base film may be composed of a single resin, or it may be composed of a mixed resin of two or more resins. The base film may also be a laminated film having a laminated structure in which two or more films are laminated. From the viewpoint of controlling adhesion with the adhesive layer 2, the surface of the base film may be subjected to surface roughening treatments such as matting or corona treatment. The base film 3 may be a base film containing at least one resin selected from the group consisting of polyester, ethylene copolymer, ionomer resin, and engineering plastic. From the viewpoint of making it easier to obtain a dicing-die bonding integrated film with superior detachability during cooling and expanding, the base film may contain at least one resin selected from the group consisting of ethylene copolymer and ionomer resin.

[0034] The base film 3 can be manufactured by conventionally known film-forming methods. For example, it can be manufactured by melt-kneading a resin composition obtained by adding additives such as an antistatic agent to the resin raw material of the base material as needed, and then processing it into a film by various molding methods such as T-die-casting, T-die-nip molding, inflation molding, extrusion lamination, and calendering. Furthermore, if the base film has a laminated structure, each layer can be manufactured separately by means such as calendering, extrusion, or inflation molding, and then laminated by means such as heat lamination or adhesive bonding to create the laminated structure. As the adhesive, adhesives that are normally used when manufacturing laminated structures can be used. Alternatively, the resin composition of each layer can be simultaneously extruded by co-extrusion lamination to create the laminated structure. In addition, the surface of the base film opposite to the surface in contact with the adhesive layer may be embossed with a textured roll or the like for the purpose of stabilizing winding during the manufacture of the base film 3 and preventing blocking after film formation.

[0035] The thickness of the base film 3 may be, for example, 20 μm or more, 30 μm or more, 40 μm or more, 50 μm or more, 60 μm or more, 70 μm or more, or 80 μm or more, and may be 200 μm or less, 150 μm or less, 130 μm or less, 110 μm or less, 100 μm or less, or 90 μm or less. The thickness of the base film 3 may be 20 to 200 μm, 40 to 150 μm, 60 to 130 μm, or 80 to 100 μm.

[0036] The shape of the base film 3 may have a rectangular main surface, but is not limited thereto. The base film 3 may be a long film, for example, a plurality of adhesive layers 2 may be arranged on a single long base film 3.

[0037] [Adhesive Layer] The adhesive layer 2 may be a layer formed of an adhesive commonly used in a dicing film. The adhesive constituting the adhesive layer 2 may be an ultraviolet-curable adhesive or a non-ultraviolet-curable adhesive. An ultraviolet-curable adhesive is an adhesive having a property of reducing adhesiveness by ultraviolet irradiation. By using an ultraviolet-curable adhesive, for example, before picking up a diced and bonded film-attached chip, the adhesive strength of the adhesive layer 2 can be reduced by ultraviolet irradiation.

[0038] The ultraviolet-curable adhesive may, for example, contain an acrylic resin having a (meth)acryloyl group. The acrylic resin may, for example, have a hydroxyl group. The acrylic resin is a polymer containing (meth)acrylate as a monomer unit. The ultraviolet-curable adhesive may further contain other components such as a photoinitiator and a crosslinking agent (for example, a polyisocyanate compound) if necessary. The crosslinking agent is a compound having a reactive group that reacts with the acrylic resin. Examples of the crosslinking agent include polyisocyanate compounds.

[0039] The thickness of the adhesive layer 2 may be, for example, 30 μm or less, 20 μm or less, 18 μm or less, 16 μm or less, 14 μm or less, 12 μm or less, 10 μm or less, 8 μm or less, 6 μm or less, 4 μm or less, or 2 μm or less, and may be 1 μm or more, 3 μm or more, or 5 μm or more. The thickness of the adhesive layer 2 may be 1 to 30 μm.

[0040] The ratio of the thickness (μm) of the adhesive layer 2 to the thickness (μm) of the base film 3 may be less than 1, 1 / 2 or less, 1 / 3 or less, 1 / 4 or less, 1 / 6 or less, 1 / 8 or less, 1 / 10 or less, or 1 / 15 or less. The ratio of the thickness (μm) of the adhesive layer 2 to the thickness (μm) of the base film 3 may be 1 / 150 or more, 1 / 125 or more, 1 / 100 or more, 1 / 75 or more, or 1 / 50 or more.

[0041] The ratio of the thickness (μm) of the adhesive layer 2 to the thickness (μm) of the dicing film 5 may be less than 1, 1 / 2 or less, 1 / 4 or less, 1 / 6 or less, 1 / 8 or less, 1 / 10 or less, or 1 / 15 or less, and may be 1 / 100 or more, 1 / 75 or more, or 1 / 50 or more.

[0042] <Die Bonding Film> The die bonding film 1 is an adhesive film for bonding a semiconductor chip to a substrate or another semiconductor chip, and is sometimes referred to as a die attach film (DAF). The die bonding film 1 has, for example, a circular main surface that covers the entire main surface of the wafer.

[0043] The die bonding film 1 may be a film formed from an adhesive commonly used for bonding semiconductor chips. The die bonding film 1 may be a thermosetting adhesive. The thermosetting adhesive constituting the die bonding film 1 includes, for example, a thermosetting component and a high molecular weight resin component (elastomer).

[0044] The thermosetting component is a compound (resin) having a reactive group that forms a crosslinked structure by self-polymerization and / or reaction with a curing agent. The thermosetting component may include, for example, an epoxy resin, and may also include a phenol resin that acts as a curing agent for the epoxy resin in addition to the epoxy resin. The content of the thermosetting component may be 5 to 250 parts by mass with respect to 100 parts by mass of the total amount of the die bonding film.

[0045] The high molecular weight resin component (elastomer) may include at least one resin selected from the group consisting of, for example, acrylic rubber, polyimide, and phenoxy resin, and may include acrylic rubber. The high molecular weight resin component may have a reactive group such as an epoxy group. The weight average molecular weight (standard polystyrene conversion value by GPC method) of the high molecular weight resin component may be 100,000 to 3,000,000. The content of the high molecular weight resin component may be 30 to 80 parts by mass with respect to 100 parts by mass of the total amount of the die bonding film.

[0046] The thermosetting adhesive may contain other components as necessary. Examples of other components include a curing accelerator that promotes the reaction between an epoxy resin and a phenol resin, a coupling agent (e.g., a silane coupling agent), an inorganic filler (e.g., silica), and the like.

[0047] The thickness of the die bonding film 1 (adhesive layer) may be, for example, 150 μm or less, 120 μm or less, 100 μm or less, 70 μm or less, 60 μm or less, 50 μm or less, 40 μm or less, 30 μm or less, 25 μm or less, or 20 μm or less, and may be 1 μm or more, 3 μm or more, 5 μm or more, 7 μm or more, or 10 μm or more. The thickness of the die bonding film 1 may be between 1 and 150 μm.

[0048] <Method for manufacturing a dicing-die bonding integrated film> The dicing-die bonding integrated film 10 can be manufactured, for example, by a method that includes the step of bonding the die bonding film 1 and the adhesive layer 2 of the dicing film 5.

[0049] (Method for manufacturing a semiconductor device) The method for manufacturing a semiconductor device according to this embodiment comprises the steps of: preparing a laminate having a substrate film, a dicing film having an adhesive layer provided on the substrate film, and an adhesive layer made of a die bonding film provided on the adhesive layer; and a plurality of chips, which are arranged on the adhesive layer and include a wafer or a wafer that has been divided into individual chips, including a dividing starting point for dividing into a plurality of chips; expanding the dicing film of the laminate under cooling conditions to divide the die bonding film into individual chips, thereby producing a chip with die bonding film pieces having the chips and die bonding film pieces from which the die bonding film has been divided; picking up the chip with die bonding film pieces from the adhesive layer; and mounting the picked-up chip with die bonding film pieces onto a substrate or another chip.

[0050] In the semiconductor device manufacturing method according to this embodiment, a dicing-die bonding integrated film may be used, which has a base film selected by the base film selection method according to the above embodiment, or a dicing-die bonding integrated film according to the above embodiment. Using these dicing-die bonding integrated films improves the detachability of the die bonding film during cooling and expansion, making it easier to pick up chips with die bonding film pieces, which have die bonding film pieces in which the chip and die bonding film have been separated into individual pieces.

[0051] The chip in this embodiment is formed by dividing a wafer and has a rectangular planar shape. The wafer may be a silicon wafer, and the chip may be a silicon chip.

[0052] For example, wafers with a thickness of 8 inches or 12 inches can be used.

[0053] The chip thickness may be less than the wafer thickness, for example, 10 to 200 μm. The chip thickness may be 15 μm or more, 20 μm or more, 150 μm or less, 100 μm or less, or 50 μm or less.

[0054] The dividing point for dividing a wafer into multiple chips may be, for example, a modified region formed inside the wafer by laser processing, or a groove formed on the wafer surface by a dicing blade. The method for forming the dividing point on the wafer and the method for dividing the wafer into individual chips may be a stealth dicing method such as the SDBG (Steel Dicing Before Grinding) method, or a half-cut dicing method such as the DBG (Dicing Before Grinding) method.

[0055] Stealth dicing may include, for example, the steps of: attaching a protective tape (backgrind tape) to the circuit surface of a wafer; forming a modified region inside the wafer by irradiating it with laser light; and thinning the wafer by grinding it from the back side. When the wafer is to be divided into multiple chips, the method may further include the steps of grinding the wafer from the back side and cutting the wafer using the modified region as the dividing point.

[0056] The half-cut dicing method may include, for example, the steps of forming grooves on the surface of a wafer with a dicing blade, attaching protective tape (backgrind tape) to the circuit surface of the wafer, and grinding the wafer from the back side to thin it. If the wafer is to be divided into multiple chips, the method may further include the step of grinding the wafer from the back side up to the grooves to cut the wafer.

[0057] Figures 2 and 3 are schematic cross-sectional views illustrating one embodiment of a semiconductor device manufacturing method. One embodiment of a semiconductor device manufacturing method comprises: (A) the step of preparing a laminate 40 having a base film 3, a dicing film 5 having an adhesive layer 2 provided on the base film 3, and a die bonding film 1 provided on the adhesive layer 2, and a plurality of chips C formed by framing a wafer, which are arranged on the die bonding film 1 of the dicing and die bonding integrated film 10; (B) the step of expanding the dicing film 5 of the laminate 40 under cooling conditions to frame the die bonding film 1, thereby producing a die bonding film chip 30 having chips C and die bonding film pieces 1a formed from the framing of the die bonding film 1; (C) the step of picking up the die bonding film chip 30 from the adhesive layer 2; and (D) the step of mounting the picked-up die bonding film chip 30 onto a substrate or another chip.

[0058] First, by the wafer-to-piece method described above, a laminate 20 can be obtained comprising a protective tape 7 (backgrind tape) and a plurality of chips C provided on the protective tape 7 (see Figure 2(a)). In the laminate 20, the chips C are provided on the protective tape 7. The chips C have a main surface F1 and a main surface F2, for example, the main surface F1 may be the circuit surface (front surface) and the main surface F2 may be the back surface opposite the circuit surface.

[0059] Next, the die bonding film 1 of the dicing-die bonding integrated film 10 is attached to the chip C under heating conditions, with the die bonding film 1 in contact with the main surface F2 of the chip C (see Figure 2(a)). The heating temperature may be, for example, 40 to 80°C. This makes it possible to obtain a laminate 40 comprising the dicing-die bonding integrated film 10 and a plurality of chips C formed by dicing a wafer, which are provided on the die bonding film 1 of the dicing-die bonding integrated film 10. At the same time that the die bonding film 1 is attached to the chip C, a dicing ring DR is attached to the main surface 2b of the adhesive layer 2 on the die bonding film 1 side, surrounding the plurality of chips C (see Figure 2(b)). At the time of attachment to the chip C, the laminate 40 may have the dicing ring DR on the main surface 2b of the adhesive layer 2 on the die bonding film 1 side. The protective tape 7 is peeled off from the chip C at an appropriate time.

[0060] Next, under cooling conditions, the dicing film 5 is expanded (stretched) by pushing up the area inside the dicing ring DR of the dicing film 5 with the cooling stage S (see Figure 2(c)). The temperature under cooling conditions may be, for example, -15 to 0°C. By expanding the dicing film 5, the die bonding film 1 is divided. This division forms a die bonding film piece-attached chip 30 on the adhesive layer 2, which has a chip C and die bonding film pieces 1a from which the die bonding film 1 has been separated.

[0061] After the cooling stage S is lowered, the area between the dicing ring DR and the die bonding film chip 30 in the dicing film 5 is heated by the heater H (see Figure 3(a)). Due to the thermal contraction of the heated portion of the dicing film 5, the kerf width between the die bonding film chips 30 tends to widen further.

[0062] If the adhesive layer 2 is a layer formed of an ultraviolet-curing adhesive, the adhesive strength of the adhesive layer 2 can be reduced by ultraviolet irradiation. After reducing the adhesive strength of the adhesive layer 2, the individual die bonding film chips 30 that have been pushed up by the push-up jig 42 are picked up by the suction collet 44 (see Figure 3(b)).

[0063] The picked-up die-bonding film chip 30 is mounted on a substrate or another chip. By stacking multiple chips, for example, a 3D NAND flash memory can be manufactured.

[0064] The present disclosure will be described below in detail based on examples, but the present disclosure is not limited to these examples.

[0065] (Example 1) <Preparation of base film A> A ternary copolymer consisting of ethylene / methacrylic acid / 2-methylpropyl acrylate in a mass ratio of 80 / 10 / 10, wherein Zn ２＋ A resin with a degree of ion neutralization of 60 mol% (melting point: 86°C, MFR: 1 g / 10 min (190°C / 2.16 kg load), density: 0.96 g / cm³) ３ The material was melted and formed into a long film with a thickness of 90 μm using an extruder. This yielded base film A (hereinafter also referred to as "base film A").

[0066] <Necking Test> A rectangular base film A with a length of 100 mm and a width of 10 mm, with TD as the long side, was prepared as test specimen A. Marks were made at 35 mm, 50 mm, and 65 mm from the end of the long side of test specimen A. The ends of the long side of test specimen A were fixed with tape up to 30 mm from each end, and the distance between the chucks was set to 40 mm. Test specimen A was stretched to TD by 150% under the conditions of a set temperature of 0°C and a tensile speed of 1000 mm / min. While maintaining the stretched state, the width of each marked portion of test specimen A was measured. The difference A between the maximum width and the minimum width of the three marked portions on the stretched test specimen A was calculated as the necking amount d(A) (unit: mm). The d(A) of base film A was 0.85 mm.

[0067] A rectangular base film A, with a length of 100 mm and a width of 10 mm, with the MD side as the longer side, was prepared as test specimen B. The width of the marked portion of the stretched test specimen B was measured using the same method as above, except that it was stretched to the MD side instead of the TD side. The difference B between the maximum and minimum widths of the marked portion of the stretched test specimen B was calculated as the necking amount d(B) (unit: mm). The d(B) of base film A was 0.60 mm.

[0068] In the base film A, the absolute value of the difference between difference A and difference B (difference A - difference B), i.e., d(A) - d(B), was 0.25 mm.

[0069] <Preparation of the adhesive layer> Ethylhexyl acrylate (EHA) and hydroxyethyl acrylate (HEA) were prepared as copolymer monomer components. These copolymer monomer components were mixed in a copolymerization ratio of EHA / HEA = 75 parts by mass / 25 parts by mass. Using ethyl acetate as the solvent and 0.08 parts by mass of azobisisobutyronitrile (AIBN) as the initiator, an acrylic copolymer was obtained by solution radical polymerization. To this acrylic copolymer, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor, and 16 parts by mass of 2-methacryloyloxyethyl isocyanate (trade name: Karenz MOI, molecular weight: 155.15) was reacted to synthesize an ultraviolet-curable acrylic copolymer having a carbon-carbon double bond. The weight-average molecular weight of the ultraviolet-curable acrylic copolymer, as measured by GPC, was 350,000. The hydroxyl value of the UV-curable acrylic copolymer, measured according to the method described in JIS K0070:1992, was 37.6 mgKOH / g.

[0070] A tack solution was prepared by mixing 100 parts by mass (based on solid content) of the obtained UV-curable acrylic copolymer, 1.0 part by mass of an α-hydroxyalkylphenone-based photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B.V., 0.2 parts by mass of an acylphosphine oxide-based photopolymerization initiator (trade name: Omnirad 819) manufactured by IGM Resins B.V., and 4.0 parts by mass (based on solid content) of a TDI-based polyisocyanate-based crosslinking agent (trade name: Coronate L-45E) manufactured by Tosoh Corporation as a crosslinking agent, diluting with ethyl acetate, and stirring.

[0071] An adhesive solution was applied to a polyethylene terephthalate film (38 μm thick) with a release treatment applied to one side, so that the thickness after drying was 10 μm. The film was then dried at 80°C for 3 minutes to form an adhesive layer on the polyethylene terephthalate film.

[0072] <Preparation of Dicing Film> A base film A, which had been treated with corona discharge on one side, was laminated to the adhesive layer described above. The laminated sample was aged in a constant temperature bath at 23°C for 96 hours to produce a dicing film.

[0073] <Preparation of adhesive layer (die bonding film)> SG-P3 solvent modified product (product name, manufactured by Nagase ChemteX Co., Ltd., acrylic resin, molecular weight 800,000, Tg: 12℃) 66 parts by weight, N-500P-10 (product name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 203 g / eq) 13 parts by weight, MEH-7800M (product name, manufactured by Meiwa Chemical Co., Ltd., phenol novolac type phenol resin, hydroxyl group equivalent: 175 g / eq) 12 parts by weight, 1-(2-shea 0.03 parts by weight of (noethyl)-2-phenylimidazole (2PZ-CN), 8 parts by weight of Aerosil R972 (trade name, manufactured by Nippon Aerosil Co., Ltd., silica, average particle size: 0.016 μm), 0.4 parts by weight of A-189 (trade name, manufactured by Nippon Unicar Co., Ltd., γ-mercaptopropyltrimethoxysilane), and 1.1 parts by weight of A-1170 (trade name, manufactured by Nippon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane) were added, and the mixture was degassed under vacuum. This adhesive varnish was applied to a 75 μm thick surface-release treated polyethylene terephthalate (manufactured by Toyobo Co., Ltd., Purex: A-31B) to obtain a 10 μm thick adhesive layer (die bonding film).

[0074] <Preparation of Integrated Dicing and Die Bonding Film> The adhesive layer (die bonding film) and the dicing film were bonded together so that the adhesive layer of the die bonding film and the adhesive layer of the dicing film were in contact, thereby obtaining the integrated dicing and die bonding film of Example 1.

[0075] (Example 2) <Preparation of base film B> Hymiran 1706 manufactured by Mitsui Dow Polychemical Co., Ltd. (melting point: 88°C, MFR: 0.9 g / 10 min (190°C / 2.16 kg load), density: 0.96 g / cm³) ３ The material was melted and formed into a long film with a thickness of 90 μm using an extruder. This yielded base film B (hereinafter also referred to as "base film B").

[0076] <Necking Test> A necking test was performed on base film B using the same method as in Example 1. The d(A) of base film B was 0.50 mm, the d(B) was 0.50 mm, and d(A) - d(B) was 0 mm.

[0077] <Preparation of Integrated Dicing and Die Bonding Film> An integrated dicing and die bonding film of Example 2 was prepared in the same manner as in Example 1, except that base film B was used as the base film.

[0078] (Example 3) <Preparation of base film C> A ternary copolymer consisting of ethylene / methacrylic acid / 2-methylpropyl acrylate in a mass ratio of 80 / 10 / 10, wherein Zn ２＋ A resin with a degree of ion neutralization of 60 mol% (melting point: 86°C, MFR: 1 g / 10 min (190°C / 2.16 kg load), density: 0.96 g / cm³) ３ ) and, in order to increase elasticity, nylon 6 (melting point: 225°C, density: 1.13 g / cm³) is used as a polyamide resin. ３ The mixed resin to which the required amount of ) was added was melted and molded into a long film with a thickness of 80 μm using an extruder. This obtained a base film C (hereinafter also referred to as "base film C").

[0079] <Necking Test> A necking test was performed on base film C using the same method as in Example 1. The d(A) of base film C was 0.57 mm, d(B) was 0.43 mm, and d(A) - d(B) was 0.14 mm.

[0080] <Preparation of Integrated Dicing and Die Bonding Film> An integrated dicing and die bonding film of Example 3 was prepared in the same manner as in Example 1, except that base film C was used as the base film.

[0081] (Example 4) <Preparation of base film D> Nucrel AN4213C manufactured by Mitsui Dow Polychemical Co., Ltd. (melting point: 88°C, MFR: 10 g / 10 min (190°C / 2.16 kg load), density: 0.94 g / cm³) ３)( ) was melted and formed into a long film with a thickness of 90 μm using an extruder. Thereby, a base film D (hereinafter, also referred to as "base D") was obtained.

[0082] <Necking test> For the base film D, a necking test was conducted in the same manner as in Example 1. The d(A) of the base film D was 1.67 mm, the d(B) was 0.50 mm, and d(A) - d(B) was 1.17 mm.

[0083] <Production of dicing / die bonding integrated film> A dicing / die bonding integrated film of Example 4 was produced in the same manner as in Example 1, except that the base film D was used as the base film.

[0084] (Example 5) <Production of base film E> A binary copolymer resin (melting point: 96°C, MFR: 9.0 g / 10 min (190°C / 2.16 kg load), density: 0.93 g / cm ３ ) was melted and formed into a long film with a thickness of 150 μm using an extruder. Then, the long film was stretched in the TD direction to a thickness of 90 μm to obtain a base film E (hereinafter, also referred to as "base E").

[0085] <Necking test> For the base film E, a necking test was conducted in the same manner as in Example 1. The d(A) of the base film E was 0.80 mm, the d(B) was 0.50 mm, and d(A) - d(B) was 0.30 mm.

[0086] <Production of dicing / die bonding integrated film> A dicing / die bonding integrated film of Example 5 was produced in the same manner as in Example 1, except that the base film E was used as the base film.

[0087] (Comparative Example 1) <Production of base film F> A binary copolymer resin (melting point: 96°C, MFR: 9.0 g / 10 min (190°C / 2.16 kg load), density: 0.93 g / cm ３The material was melted and formed into a long film with a thickness of 90 μm using an extruder. This yielded a base film F (hereinafter also referred to as "base film F").

[0088] <Necking Test> A necking test was performed on the base film F using the same method as in Example 1. The d(A) of the base film F was 2.50 mm, the d(B) was 0.50 mm, and the d(A)-d(B) was 2.00 mm.

[0089] <Preparation of Integrated Dicing and Die Bonding Film> A dicing and die bonding integrated film of Comparative Example 1 was prepared in the same manner as in Example 1, except that base film F was used as the base film.

[0090] (Comparative Example 2) <Preparation of base film G> A multilayer polyolefin base material consisting of polypropylene / vinyl acetate polymer / polypropylene was melted and formed into a long film with a thickness ratio of 1 / 8 / 1 and a thickness of 100 μm using an extruder. This obtained base film G (hereinafter also referred to as "base G").

[0091] <Necking Test> A necking test was performed on the base film G using the same method as in Example 1. The d(A) of the base film G was 3.90 mm, the d(B) was 0.45 mm, and the d(A)-d(B) was 3.45 mm.

[0092] <Preparation of Integrated Dicing and Die Bonding Film> A dicing and die bonding integrated film of Comparative Example 2 was prepared in the same manner as in Example 1, except that base film G was used as the base film.

[0093] (Comparative Example 3) <Preparation of base film H> Hymiran 1652 manufactured by Mitsui Dow Polychemical Co., Ltd. (melting point: 98°C, MFR: 5.5 g / 10 min (190°C / 2.16 kg load), density: 0.94 g / cm³) ３ The material was melted and formed into a long film with a thickness of 90 μm using an extruder. This yielded a base film H (hereinafter also referred to as "base film H").

[0094] <Necking Test> A necking test was performed on the base film H using the same method as in Example 1. The d(A) of the base film H was 2.67 mm, the d(B) was 1.33 mm, and the d(A)-d(B) was 1.34 mm.

[0095] <Preparation of Integrated Dicing and Die Bonding Film> A dicing and die bonding integrated film of Comparative Example 3 was prepared in the same manner as in Example 1, except that base film H was used as the base film.

[0096] (Comparative Example 4) <Preparation of Substrate Film I> Nucrel N0903HC manufactured by Mitsui Dow Polychemical Co., Ltd. (Melting point: 99°C, MFR: 3 g / 10 min (190°C / 2.16 kg load), Density: 0.93 g / cm³) ３ The material was melted and formed into a long film with a thickness of 90 μm using an extruder. This yielded base film I (hereinafter also referred to as "base film I").

[0097] <Necking Test> A necking test was performed on the base film I using the same method as in Example 1. The d(A) of the base film I was 3.00 mm, the d(B) was 0.33 mm, and the d(A)-d(B) was 2.67 mm.

[0098] <Preparation of Integrated Dicing and Die Bonding Film> A dicing and die bonding integrated film of Comparative Example 4 was prepared in the same manner as in Example 1, except that base film I was used as the base film.

[0099] (Evaluation of Dissociative Properties) <Preparation of Evaluation Samples> Evaluation samples were prepared for each of the dicing-die bonding integrated films of Examples 1 to 5 and Comparative Examples 1 to 4 according to the following procedure.

[0100] A protective tape was applied to the surface of a silicon wafer (diameter: 12 inches, thickness: 775 μm). Subsequently, the silicon wafer was fragmented by stealth dicing. Specifically, a modified region was formed inside the silicon wafer by irradiating the side of the silicon wafer opposite to the side to which the protective tape was applied (the back side) with laser light under the following conditions.

[0101] [Stealth Dicing Conditions] ・Stealth dicing device: DFL7361 (manufactured by DISCO Corporation) ・Laser oscillator type: Semiconductor laser-pumped Q-switched solid-state laser ・Wavelength: 1342 nm ・Frequency: 60 kHz ・Output: 0.8 W ・Number of passes: 2 ・Chip size: 3 mm x 12 mm ・Dicing speed: 800 mm / sec

[0102] Next, the side of the silicon wafer opposite to the protective tape was ground (polished) using a grinder polisher (DGP8761, manufactured by Disco Corporation) until the silicon wafer thickness was 30 μm, and the silicon wafer was separated into individual silicon chips. The die bonding film of the dicing / die bonding integrated film was attached to the side of the silicon chip opposite to the protective tape under the following attachment conditions. At this time, the orientation of attachment was adjusted so that the direction of the division line of the silicon chip aligned with the MD and TD of the base film of the dicing / die bonding integrated film. The silicon wafer was attached so that the long side of the chip was the TD. Furthermore, the adhesive layer of the portion that extended beyond the die bonding film was attached to the dicing ring, and then the protective tape was peeled off from the silicon wafer.

[0103] [Application Conditions] • Application device: DFM2800 (manufactured by DISCO Corporation) • Application temperature: 65°C • Application speed: 10 mm / s • Application tension level: Level 1

[0104] Next, using a die separator (DDS2300, manufactured by Disco Corporation), the dicing film of the dicing-die bonding integrated film was stretched by cooling and expanding under the following cooling and expanding conditions, thereby separating the die bonding film.

[0105] [Cooling and Expanding Conditions] • Cooling Temperature: 0°C • Cooling Time: 120 seconds • Push-up Amount: 10 mm • Push-up Speed: 120 mm / second • Holding Time after Push-up: 3 seconds

[0106] <Evaluation of Disintegration Properties> After separating the die bonding film by cooling and expanding, the disintegration properties of the samples were evaluated according to the following procedure. The results are shown in Table 1.

[0107] Using a Mitutoyo Corporation measuring microscope (MF-U), the separation state of the die bonding film was confirmed by magnified observation of the space between chips from the top side, along the long side (12 mm) and along the short side (3 mm). 216 locations each on the long side and short side of the chip (total number of observations: 432) were selected as observation targets. The long and short sides of the chip to be observed were selected from one side of the chip formed by separation along one of the 26 division lines along the short side (216 locations on the long side, 216 locations on the short side, total 432 locations). An OK judgment was made if the die bonding film was cut along the entire side, and an NG judgment was made if the entire side or part of the side remained uncut. Separation was evaluated by the separation OK rate calculated using the formula: (number of OKs / total number of observations) × 100. The evaluation was as follows: a "A" rating was given if the "OK rate for fragmentation" was 95% or higher, a "B" rating if it was between 81% and 94%, a "C" rating if it was between 61% and 80%, and a "D" rating if it was 60% or lower.

[0108]

[0109] As shown in Table 1, the dicing-die bonding integrated films of Examples 1 to 5, in which the d(A) of the base film was 2 mm or less, were found to have better die bonding film detachability during cooling and expanding compared to the dicing-die bonding integrated films of Comparative Examples 1 to 4, in which the d(A) of the base film was greater than 2 mm.

[0110] 1... Die bonding film, 1a... Die bonding film piece, 2... Adhesive layer, 3... Base film, 5... Dicing film, 7... Protective tape, 10... Integrated dicing and die bonding film, 20... Laminate, 30... Chip with die bonding film piece, 40... Laminate, 42... Push-up jig, 44... Suction collet, C... Semiconductor chip, DR... Dicing ring, H... Heater, S... Cooling stage.

Claims

1. A method for selecting a base film for a dicing-die bonding integrated film, comprising: a step of preparing a rectangular base film as a test piece A, with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with TD as the longer side; a step of stretching the test piece A to 150% on TD under conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, and measuring the difference A between the maximum width and minimum width of the test piece A after stretching; and a step of selecting base films in which the difference A is 2 mm or less.

2. A method for selecting a base film according to claim 1, further comprising: preparing a rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with the longer side being MD, as a test piece B; stretching the test piece B by 150% along MD under conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, and measuring the difference B between the maximum width and minimum width of the test piece B after stretching; and selecting base films in which the difference B is 2 mm or less.

3. The method for selecting a base film according to claim 2, further comprising the step of selecting a base film in which the absolute value of the difference between difference A and difference B (difference A - difference B) is 0.0 mm or more and 1.3 mm or less.

4. A dicing-die bonding integrated film comprising a base film and a dicing film including an adhesive layer provided on the base film, and an adhesive layer made of a die bonding film disposed on the adhesive layer of the dicing film, wherein the base film satisfies the following condition (1): (1) A rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with TD as the long side, is prepared as a test piece A, and when the test piece A is stretched to TD by 150% under the conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, the difference A between the maximum width and minimum width of the test piece A after stretching is 2 mm or less.

5. The dicing-die bonding integrated film according to claim 4, further satisfying the following condition (2): (2) A rectangular base film with a length of 100 mm, a width of 10 mm, and a thickness of 20 to 200 μm, with MD as the longer side, is prepared as a test piece B, and when the test piece B is stretched 150% along MD under the conditions of a chuck distance of 40 mm, a set temperature of 0°C, and a tensile speed of 1000 mm / min, the difference B between the maximum width and minimum width of the test piece B after stretching is 2 mm or less.

6. The dicing-die bonding integrated film according to claim 5, further satisfying the following condition (3): (3) The absolute value of the difference between difference A and difference B (difference A - difference B) is 0.0 mm or more and 1.3 mm or less.

7. A method for manufacturing a semiconductor device, comprising: preparing a laminate having a dicing-die bonding integrated film according to any one of claims 4 to 6, and a wafer or a plurality of chips obtained by fragmenting a wafer, each containing a dividing starting point for dividing into a plurality of chips, disposed on the adhesive layer of the dicing-die bonding integrated film; expanding the dicing film of the laminate under cooling conditions to fragment the die bonding film, thereby producing a die bonding film piece-attached chip having the chip and the die bonding film piece formed from the fragmented die bonding film; picking up the die bonding film piece-attached chip from the adhesive layer of the dicing-die bonding integrated film; and mounting the picked-up die bonding film piece-attached chip onto a substrate or another chip.

Images