Hybrid bonding method for substrates using atmospheric-pressure plasma surface treatment

Abstract

The present invention relates to a hybrid bonding method for substrates using atmospheric-pressure plasma surface treatment and, more specifically, provides a hybrid bonding method for substrates using atmospheric-pressure plasma surface treatment, wherein substrates with oxide films or metal-containing substrates with oxide films are surface treated with atmospheric-pressure plasma to remove contaminants on bonding surfaces and modify same, and then the substrates are directly bonded to each other without using micro-bumps to generate electrical connection passage, so that the substrates can be stably stacked as many as a stacking target number within a limited total height and the time required for stacking the substrates can be reduced.

Description

Hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment

[0001] The present invention relates to a hybrid bonding method for substrates using atmospheric pressure plasma surface treatment, and more specifically, to a hybrid bonding method for substrates using atmospheric pressure plasma surface treatment in which substrates having an oxide film formed thereon or substrates containing a metal having an oxide film formed thereon are surface-treated with atmospheric pressure plasma to remove contaminants from the bonding surface and modify it, and then directly bonded to each other without using microbumps to create electrical connection paths, thereby enabling stable stacking of a target number of layers within a limited total height and reducing the time required for stacking.

[0002] High Bandwidth Memory (HBM) is a memory semiconductor in which multiple memory chips or DRAMs are stacked vertically; specifically, its capacity and transfer speed are determined by the number of vertically stacked memory chips and the spacing between them.

[0003] Therefore, the bonding process is very important to minimize the gap between chips.

[0004] Currently, TC bonding (Thermo-compression Bonding) and hybrid bonding processes using vacuum plasma are mainly used.

[0005] The TC bonding process has the disadvantage of being difficult to consistently transfer heat and pressure to each chip, and the vacuum plasma hybrid bonding process is a process that allows chips to be bonded with the shortest possible bonding distance, but it has the disadvantage of requiring more equipment and processing time to maintain a vacuum state at every stage before bonding.

[0006] Figure 1 is a flowchart of an exemplary hybrid bonding method for stacking DRAMs in a conventional HBM manufacturing process.

[0007] First, a mother wafer is prepared (S101), and the mother wafer is plasma treated (S102).

[0008] Afterwards, the plasma-treated mother wafer is rinsed with DI (Deionized water Rinse) (S103).

[0009] After that, pick up the die (S104) and invert the die (S105).

[0010] Meanwhile, a dicing wafer is prepared (S106), and the dicing wafer is plasma treated (S107). Afterwards, the plasma-treated dicing wafer is rinsed with DI (Deionized Water Rinse) (S108).

[0011] Afterwards, the inverted die and the dicing wafer are combined to stack one layer (S109).

[0012] One layer is stacked by performing the steps "S101" to "S109" above, and 16 layers of HBM can be formed by repeating the steps "S101" to "S109" 16 times.

[0013] In the conventional HBM manufacturing process, vacuum plasma technology is applied for plasma surface treatment during die-to-die bonding.

[0014] Since plasma surface treatment is performed in a vacuum, the time required for plasma surface treatment is long, and because a DI rinse process is essential every time a die is surface treated, a minimum of 96 treatment processes are required, resulting in a large amount of process time for surface activation in the process.

[0015] For example, when forming 16 stages, if 5 minutes (equipment operating time) is required per DI rinse process, it takes approximately 480 minutes.

[0016] In addition, high temperatures exceeding 100°C are generated during the drying process, and as impurities melt, conductors, binders, etc. in the compound may separate, which can lead to a decrease in performance.

[0017] Korean published patent [10-2024-0015041] discloses a substrate bonding method.

[0018] U.S. Patent [10886252] discloses a method for bonding semiconductor substrates.

[0019] Korean published patent [10-2024-0015041] and U.S. registered patent [10886252] disclose a process step of treating the bonding surface between substrates with vacuum plasma and rinsing.

[0020] The plasma treatment in the aforementioned conventional technology is a method of processing by loading a substrate into a chamber where a process pressure in a vacuum or low-pressure state is maintained. This method not only requires additional processing time to maintain the process pressure but also incurs high investment costs for equipment such as a separate processing space like a chamber and a compressor.

[0021] In addition, the wet process of rinsing or immersing a plasma-treated substrate in ammonium hydroxide in the above-mentioned prior art not only involves the inconvenience of having to manage solutions such as deionized water or ammonium hydroxide, but also requires additional drying and rinsing processes, which is one of the factors that reduce productivity in mass production manufacturing processes.

[0022] Accordingly, the present invention has been devised to solve the problems described above. The objective of the present invention is to provide a hybrid bonding method for substrates using atmospheric pressure plasma surface treatment, which enables stable stacking of a target number of substrates within a limited total height and reduces the time required for stacking by surface treating substrates having an oxide film or substrates containing a metal having an oxide film with atmospheric pressure plasma to remove contaminants and modify the bonding surface, and then directly bonding them to each other without using microbumps to create electrical connection paths.

[0023] The purposes of the embodiments of the present invention are not limited to those mentioned above, and other unmentioned purposes will be clearly understood by those skilled in the art from the description below.

[0024] A hybrid bonding method for a substrate using atmospheric pressure plasma surface treatment according to an embodiment of the present invention for achieving the above-mentioned purpose comprises: a substrate providing step (S10) of providing a substrate; a substrate plasma treatment step (S20) of performing atmospheric pressure plasma surface treatment on the substrate; an additional substrate providing step (S30) of providing an additional substrate; an additional substrate plasma treatment step (S40) of performing atmospheric pressure plasma surface treatment on the additional substrate; an alignment step (S50) of inverting and aligning one substrate so that the surface-treated substrate and the surface-treated additional substrate face each other; a bonding step (S60) of bonding the aligned substrate and the additional substrate to form the substrate; a step of repeating the substrate plasma treatment step (S20) to the bonding step (S60) according to the target number of stacks; and an annealing step (S80) of annealing the substrate stacked by the target number of stacks.

[0025] The above substrate and the additional substrate are characterized by including a metal pattern and having a dielectric layer or an oxide layer formed on the top layer.

[0026] The above atmospheric pressure plasma surface treatment is characterized by simultaneously or in stages performing dangling bond formation and hydrophilization treatment on the surfaces of the substrate and the additional substrate.

[0027] The above atmospheric pressure plasma surface treatment is characterized by treatment with a process gas mixed with an inert gas and a reactive gas.

[0028] The above inert gas comprises one or more of argon (Ar), helium (He), and nitrogen (N), and the above reactive gas comprises one or more of hydrogen (H2) and ammonia (NH3).

[0029] The above substrate plasma treatment step (S20) is characterized by including: a first plasma treatment step (S301) of performing atmospheric pressure plasma surface treatment with an inert gas comprising one or more of argon (Ar), helium (He), and nitrogen (N); and a second plasma treatment step (S302) of performing atmospheric pressure plasma surface treatment with an inert gas comprising one or more of hydrogen (H2) and ammonia (NH3).

[0030] The above additional substrate plasma treatment step (S40) is characterized by including: a first plasma treatment step (S301) of performing atmospheric pressure plasma surface treatment with an inert gas comprising one or more of argon (Ar), helium (He), and nitrogen (N); and a second plasma treatment step (S302) of performing atmospheric pressure plasma surface treatment with an inert gas comprising one or more of hydrogen (H2) and ammonia (NH3).

[0031] The above atmospheric pressure plasma surface treatment is characterized by being performed at a process temperature of 100℃ or lower, preferably at 80℃.

[0032] The above atmospheric pressure plasma surface treatment is characterized by being performed using a dielectric barrier discharge (DBD) type electrode or an inductively coupled plasma (ICP) type electrode.

[0033] In addition, the present invention provides a high bandwidth memory (HBM) characterized by being formed by a bonding method of a substrate using atmospheric pressure plasma surface treatment according to one embodiment of the present invention for achieving the above-mentioned purpose.

[0034] In addition, according to one embodiment of the present invention, a computer-readable recording medium is provided that stores a program for implementing a hybrid bonding method of a substrate using the atmospheric pressure plasma surface treatment.

[0035] In addition, according to one embodiment of the present invention, a program stored on a computer-readable recording medium is provided to implement a hybrid bonding method of a substrate using the atmospheric pressure plasma surface treatment.

[0036] According to a hybrid bonding method for substrates using atmospheric pressure plasma surface treatment according to one embodiment of the present invention, substrates having an oxide film formed thereon or substrates containing a metal having an oxide film formed thereon are surface-treated with atmospheric pressure plasma to remove contaminants from the bonding surface and modify it, and then directly bonded to each other without using microbumps to create an electrical connection path, thereby enabling stable stacking of a target number of layers within a limited total height.

[0037] In addition, according to the hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment according to one embodiment of the present invention, by surface treatment with atmospheric pressure plasma, the time required for the process can be shortened compared to conventional vacuum plasma treatment.

[0038] In addition, according to the hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment according to one embodiment of the present invention, by eliminating the DI rinse step performed to form hydrogen in the insulating structure (SiOx), it is possible to drastically reduce the total time required.

[0039] FIG. 1 is a flowchart of an exemplary hybrid bonding method for stacking DRAMs in a conventional HBM manufacturing process.

[0040] FIG. 2 is a flowchart of an exemplary embodiment of a hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment according to the present invention.

[0041] FIG. 3 is a detailed flowchart of a specific example of the substrate plasma treatment step (S20) and additional substrate plasma treatment step (S40) of FIG. 2.

[0042] FIG. 4 is a diagram illustrating the structure of an atmospheric pressure plasma electrode of the dielectric barrier discharge (DBD) method, on which atmospheric pressure plasma surface treatment according to the present invention is performed.

[0043] FIG. 5 is a diagram illustrating an atmospheric pressure plasma electrode structure of an inductively coupled plasma (ICP) type in which atmospheric pressure plasma surface treatment according to the present invention is performed.

[0044] *Detailed explanation of the main symbols in the drawing*

[0045] S10: Substrate provision step

[0046] S20: Substrate plasma treatment step

[0047] S30: Additional substrate provision step

[0048] S40: Additional substrate plasma treatment step

[0049] S50: Alignment step

[0050] S60: Joining step

[0051] S80: Annealing stage

[0052] S301: First plasma treatment step

[0053] S302: Second plasma treatment step

[0054] The present invention is capable of various modifications and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail. However, this is not intended to limit the invention to specific embodiments, and it should be understood that the invention includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.

[0055] When it is stated that one component is "connected" or "joined" to another component, it should be understood that while it may be directly connected or joined to that other component, there may also be other components in between.

[0056] On the other hand, when it is stated that one component is "directly connected" or "directly coupled" to another component, it should be understood that there are no other components in between.

[0057] The terms used in this specification are used merely to describe specific embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, terms such as “comprising” or “having” are intended to specify the existence of the features, numbers, processes, operations, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, processes, operations, components, parts, or combinations thereof.

[0058] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0059] The present invention will be described in more detail below with reference to the attached drawings. Prior to this, terms and words used in this specification and claims should not be interpreted as being limited to their ordinary or dictionary meanings. Based on the principle that the inventor can appropriately define the concepts of terms to best describe their invention, they should be interpreted in a meaning and concept consistent with the technical spirit of the present invention. Furthermore, unless otherwise defined, technical and scientific terms used shall have the meaning commonly understood by those skilled in the art to which this invention pertains. Descriptions of known functions and configurations that could unnecessarily obscure the essence of the present invention in the following description and attached drawings are omitted. The drawings presented below are provided as examples to ensure that the spirit of the present invention is sufficiently conveyed to those skilled in the art. Accordingly, the present invention is not limited to the drawings presented below and may be embodied in other forms. Additionally, throughout the specification, the same reference numerals indicate the same components. It should be noted that the same components in the drawings are represented by the same reference numerals wherever possible.

[0060] The present invention provides a hybrid bonding technology using atmospheric pressure plasma surface treatment for substrate bonding, and more specifically, proposes a hybrid bonding method in which a substrate having a dielectric layer or an oxide film formed on its top layer (a substrate having an oxide film formed on it or a substrate including a metal having an oxide film formed on it) is surface-treated with atmospheric pressure plasma.

[0061] The present invention aims to remove surface contaminants and activate the surface of metal electrodes (Cu) and insulating materials (SiOx) formed on each boundary surface during die-to-die bonding when manufacturing high bandwidth memory (HBM) by using plasma surface treatment, and to remove surface contaminants and activate the surface using atmospheric pressure plasma as the surface treatment method.

[0062] Atmospheric pressure plasma refers to plasma generated at a pressure similar to atmospheric pressure. Compared to vacuum plasma, atmospheric pressure plasma has the advantages of simpler equipment, lower cost, and ease of large-area processing.

[0063] FIG. 2 is a flowchart of an exemplary embodiment of a hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment according to the present invention.

[0064] First, a substrate is provided (S10).

[0065] The above substrate includes a metal pattern, and a dielectric layer or an oxide layer is formed on the top layer.

[0066] Afterwards, atmospheric pressure plasma surface treatment is performed on the substrate (S20).

[0067] In the above substrate plasma treatment step (S20), the atmospheric pressure plasma surface treatment simultaneously or in stages generates dangling bonds and performs hydrophilization treatment on the surface of the substrate.

[0068] Meanwhile, in the above substrate plasma treatment step (S20), the atmospheric pressure plasma surface treatment is performed using a process gas mixed with an inert gas and a reactive gas.

[0069] The above inert gas comprises one or more of argon (Ar), helium (He), and nitrogen (N), and the above reactive gas comprises one or more of hydrogen (H2) and ammonia (NH3).

[0070] Meanwhile, in the above substrate plasma treatment step (S20), the atmospheric pressure plasma surface treatment can be performed at a process temperature of 100°C or lower, preferably at 80°C.

[0071] Afterwards, an additional substrate is provided (S30).

[0072] The above additional substrate includes a metal pattern, and a dielectric layer or an oxide layer is formed on the top layer.

[0073] That is, when manufacturing a 16-layer HBM, a bottom wafer of the HBM is provided in the substrate providing step (S10), and 16 dicing wafers stacked on the bottom wafer may each be provided in the additional substrate providing step (S30).

[0074] Afterwards, atmospheric pressure plasma surface treatment is performed on the additional substrate (S40).

[0075] In the additional substrate plasma treatment step (S40) above, the atmospheric pressure plasma surface treatment simultaneously or stepwise performs the formation of dangling bonds and hydrophilization treatment on the surface of the additional substrate.

[0076] Meanwhile, in the additional substrate plasma treatment step (S40) above, the atmospheric pressure plasma surface treatment is performed using a process gas mixed with an inert gas and a reactive gas.

[0077] The above inert gas comprises one or more of argon (Ar), helium (He), and nitrogen (N), and the above reactive gas comprises one or more of hydrogen (H2) and ammonia (NH3).

[0078] Meanwhile, in the additional substrate plasma treatment step (S40) above, the atmospheric pressure plasma surface treatment can be performed at a process temperature of 100°C or lower, preferably at 80°C.

[0079] Afterwards, one of the substrates is inverted and aligned so that the surface-treated substrate and the additional surface-treated substrate face each other (S50).

[0080] Afterwards, the aligned substrate and the additional substrate are joined to form the substrate (S60).

[0081] That is, after the bonding step (S60), a substrate with one layer stacked is formed.

[0082] Afterwards, it is determined whether the stacking target number has been stacked (S70).

[0083] Based on the judgment result of the above judgment step (S70), if the number of stacked substrates has not reached the target number, the process proceeds to the above substrate plasma treatment step (S20) to plasma treat the substrates stacked up to the previous step.

[0084] Meanwhile, based on the judgment result of the above judgment step (S70), if the number of stacked substrates is equal to the target number of stacked substrates, annealing is performed on the final stacked substrate (S80).

[0085] That is, depending on the target number of layers, the substrate plasma treatment step (S20) to the bonding step (S60) are repeated, and the substrates stacked according to the target number of layers are annealed (S80) to form a final substrate.

[0086] By using the atmospheric pressure plasma surface treatment according to the present invention, bonding between substrates is possible without a DI rinse step, unlike conventional methods.

[0087] FIG. 3 is a detailed flowchart of a specific example of the substrate plasma treatment step (S20) and additional substrate plasma treatment step (S40) of FIG. 2.

[0088] In each of the above substrate plasma treatment step (S20) and the above additional substrate plasma treatment step (S40), first, atmospheric pressure plasma surface treatment is performed with an inert gas containing one or more of argon (Ar), helium (He), and nitrogen (N) (S301).

[0089] The first plasma treatment step (S301) above creates a dangling bond on the surface of the substrate and the additional substrate.

[0090] That is, it breaks the bonds of oxygen atoms contained in the dielectric layer or oxide layer included in the substrate and the additional substrate.

[0091] Afterwards, atmospheric pressure plasma surface treatment is performed with an inert gas containing at least one of hydrogen (H2) and ammonia (NH3) (S302).

[0092] For example, the second plasma treatment step (S302) may be carried out with a mixture of a reactive gas containing one or more of hydrogen (H2) and ammonia (NH3) and an inert gas containing one or more of argon (Ar), helium (He), and nitrogen (N).

[0093] The second plasma treatment step (S302) generates OH groups by performing a hydrophilization treatment on the surface of the substrate and the additional substrate.

[0094] FIG. 4 is a diagram illustrating the structure of an atmospheric pressure plasma electrode of the dielectric barrier discharge (DBD) method in which atmospheric pressure plasma surface treatment according to the present invention is performed.

[0095] Referring to Fig. 4, an atmospheric pressure plasma electrode structure of the dielectric barrier discharge (DBD) method is illustrated.

[0096] The Dielectric Barrier Discharge (DBD) method has a simple structure consisting of two metal electrodes and a dielectric.

[0097] In the DBD method, when alternating current (AC) or pulsed power is applied to one electrode, charge accumulates in the dielectric surrounding the electrode, and subsequently, when the polarity of the electrode changes, the charge accumulated in the dielectric is released, and plasma is formed between the electrodes.

[0098] The DBD method can easily generate discharge plasma even at high pressures comparable to atmospheric pressure, and the power frequency can also cover a wide range from AC to RF.

[0099] The DBD method can be divided into two types based on the power frequency: low frequency and high frequency.

[0100] Low-frequency DBD is also referred to as "silent" or "atmospheric-pressure-glow discharge," and at least one of the two electrodes has a dielectric barrier. The gap is several millimeters, and the voltage is approximately 5 to 20 kV. Plasma generation is achieved through the simultaneous succession of micro-arcs (the entire micro-arcs) maintained for 10 to 100 ns. These micro-arcs or streamers are discharges with a diameter of approximately 100 µm. The electron temperature is known to be 1 to 10 eV.

[0101] In the case of high-frequency DBD, the IV curve of a typical glow discharge appears, and the plasma is maintained at a voltage of several hundred volts. The main gases used are inert gases such as argon (Ar) and helium (He). Micro-arcs, which occur at low frequencies, do not develop, and the plasma density is high. The electron temperature is known to be 1–3 eV.

[0102] FIG. 5 is a diagram illustrating an atmospheric pressure plasma electrode structure of an inductively coupled plasma type in which atmospheric pressure plasma surface treatment according to the present invention is performed.

[0103] Figure 5 illustrates a typical inductively coupled plasma plasma treatment apparatus.

[0104] Inductively Coupled Plasma (ICP) is a plasma obtained by applying a high voltage to a gas to ionize atoms and further generating Joule heat through eddy currents within the plasma by a high-frequency fluctuating magnetic field.

[0105] In other words, an inert gas is passed through an induction coil to ionize it, and when an electric current is passed inside the coil to create a magnetic field, electrons collide to generate plasma.

[0106] In the diagram, OES (Optical Emissions Spectrometry) is a plasma measurement device that analyzes the emission of plasma.

[0107] Atmospheric pressure plasma for die-to-die bonding has an ICP structure to prevent particle generation. An atmospheric pressure plasma surface treatment device with an ICP structure is attached to a robot with one or more axes to activate the die surface.

[0108] Although the dielectric barrier discharge or inductively coupled plasma method was cited above as an example of an atmospheric pressure plasma treatment device, the present invention is not limited thereto, and other devices having a plasma electrode structure capable of generating atmospheric pressure plasma are also possible.

[0109] Although a hybrid bonding method for a substrate using atmospheric pressure plasma surface treatment according to one embodiment of the present invention has been described above, it is obvious that a computer-readable recording medium storing a program for implementing a hybrid bonding method for a substrate using atmospheric pressure plasma surface treatment and a program stored on the computer-readable recording medium for implementing a hybrid bonding method for a substrate using atmospheric pressure plasma surface treatment can also be implemented.

[0110] That is, those skilled in the art will readily understand that the hybrid bonding method of a substrate using the aforementioned atmospheric pressure plasma surface treatment may be provided by being tangibly implemented as a program of instructions for implementing it, and thus included in a computer-readable recording medium. In other words, it may be implemented in the form of program instructions that can be executed through various computer means and recorded on a computer-readable recording medium. The computer-readable recording medium may include program instructions, data files, data structures, etc., either individually or in combination. The program instructions recorded on the computer-readable recording medium may be those specifically designed and configured for the present invention, or they may be those known and available to those skilled in computer software. Examples of the computer-readable recording medium include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical recording media such as CD-ROMs and DVDs; magneto-optical media such as floptical disks; and hardware devices specifically configured to store and execute program instructions, such as ROM, RAM, flash memory, and USB memory. Examples of program instructions include machine code, such as that generated by a compiler, as well as high-level language code that can be executed by a computer using an interpreter, etc. The hardware device may be configured to operate as one or more software modules to perform the operation of the present invention, and vice versa.

[0111] The present invention is not limited to the embodiments described above, and its scope of application is diverse. Furthermore, it is understood that various modifications are possible without departing from the essence of the invention as claimed in the claims.

Claims

1. A hybrid bonding method for a substrate using atmospheric pressure plasma surface treatment, A substrate providing step (S10) for providing a substrate; A substrate plasma treatment step (S20) for performing atmospheric pressure plasma surface treatment on the above substrate; Additional substrate provision step (S30) for providing an additional substrate; An additional substrate plasma treatment step (S40) for performing atmospheric pressure plasma surface treatment on the additional substrate; Alignment step (S50) of aligning one substrate by inverting it so that the surface-treated substrate and the additional surface-treated substrate face each other; A bonding step (S60) in which the aligned substrate and the additional substrate are bonded to form the substrate; A step of repeating the substrate plasma treatment step (S20) to the bonding step (S60) according to the number of stacking targets; and an annealing step (S80) of annealing the substrate stacked according to the target number of stacking layers Hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment including 2. In Paragraph 1, The above substrate and the above additional substrate are, Hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment, characterized by including a metal pattern and having a dielectric layer or an oxide layer formed on the top layer.

3. In Paragraph 1, The above atmospheric pressure plasma surface treatment is, A hybrid bonding method for substrates using atmospheric pressure plasma surface treatment, characterized by simultaneously or sequentially performing dangling bond formation and hydrophilization treatment on the surfaces of the substrate and the additional substrate.

4. In Paragraph 1, The above atmospheric pressure plasma surface treatment is, Hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment characterized by treatment with a process gas mixed with an inert gas and a reactive gas.

5. In Paragraph 4, The above inert gas is, It includes one or more of argon (Ar), helium (He), and nitrogen (N), The above reactive gas is, Hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment characterized by including one or more of hydrogen (H2) and ammonia (NH3).

6. In Paragraph 1, The above substrate plasma treatment step (S20) is, A first plasma treatment step (S301) of performing atmospheric pressure plasma surface treatment with an inert gas comprising one or more of argon (Ar), helium (He), and nitrogen (N); and A second plasma treatment step (S302) in which atmospheric pressure plasma surface treatment is performed using an inert gas containing one or more of hydrogen (H2) and ammonia (NH3) A hybrid bonding method for a substrate using atmospheric pressure plasma surface treatment, characterized by including 7. In Paragraph 1, The above additional substrate plasma treatment step (S40) is, A first plasma treatment step (S301) of performing atmospheric pressure plasma surface treatment with an inert gas comprising one or more of argon (Ar), helium (He), and nitrogen (N); and A second plasma treatment step (S302) in which atmospheric pressure plasma surface treatment is performed using an inert gas containing one or more of hydrogen (H2) and ammonia (NH3) A hybrid bonding method for a substrate using atmospheric pressure plasma surface treatment, characterized by including 8. In Paragraph 1, The above atmospheric pressure plasma surface treatment is, A hybrid bonding method for a substrate using atmospheric pressure plasma surface treatment, characterized in that the process temperature is 100℃ or lower, preferably 80℃.

9. In Paragraph 1, The above atmospheric pressure plasma surface treatment is, A hybrid bonding method for a substrate using atmospheric pressure plasma surface treatment, characterized by proceeding with a dielectric barrier discharge (DBD) type electrode or an inductively coupled plasma (ICP) type electrode.

10. A high bandwidth memory (HBM) characterized by being formed by a hybrid bonding method of a substrate using atmospheric pressure plasma surface treatment selected from any one of claims 1 to 9.

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