Bonding device, processing system, and bonding method

Abstract

Provided is a bonding device for bonding a plurality of dies to a substrate, the dies being held by a die carrier. The bonding device comprises: a die carrier holding unit that holds the die carrier from below the die carrier in a state in which bonding surfaces of the plurality of dies are facing upward; a substrate holding unit that holds the substrate from above the substrate in a state in which a bonding surface of the substrate is facing downward; a die conveyance unit that receives the dies from the die carrier and conveys the dies in a state in which the bonding surfaces of the dies are facing upward; and a die bonding unit that receives the dies from the die conveyance unit and bonds the dies to the substrate in a state in which the bonding surfaces of the dies are facing upward.

Description

Bonding device, processing system, and bonding method

[0001] The present disclosure relates to a bonding device, a processing system, and a bonding method.

[0002] Patent Document 1 discloses a chip-on-wafer bonding method for mounting chips on a wafer. In this chip-on-wafer bonding method, after performing surface activation treatment and hydrophilization treatment on the surface of the chips and performing surface activation treatment and hydrophilization treatment on the surface of the substrate, a plurality of chips are bonded to the substrate.

[0003] Japanese Patent No. 6337400

[0004] The technology according to the present disclosure efficiently mounts a plurality of dies on a substrate.

[0005] One aspect of the present disclosure is a bonding device that bonds a plurality of dies held by a die carrier to a substrate, including: a die carrier holding portion that holds the die carrier from below the die carrier with the bonding surfaces of the plurality of dies facing upward; a substrate holding portion that holds the substrate from above the substrate with the bonding surface of the substrate facing downward; a die transfer portion that receives the die from the die carrier and transfers the die with the bonding surface of the die facing upward; and a die bonding portion that receives the die from the die transfer portion and bonds the die to the substrate with the bonding surface of the die facing upward.

[0006] According to the present disclosure, a plurality of dies can be efficiently mounted on a substrate.

[0007] This is a side view showing a schematic configuration of a wafer with multiple dies mounted on it. This is a side view showing a schematic configuration of a carrier that holds multiple dies. This is a plan view showing a schematic configuration of a processing system. This is a perspective view showing a schematic configuration of a bonding apparatus according to this embodiment. This is an explanatory diagram showing the operation of the bonding apparatus. This is an explanatory diagram showing the position adjustment of the first imaging unit and the second imaging unit. This is a flow chart showing the main steps of the dion wafer manufacturing process. This is an explanatory diagram schematically showing some steps of the dion wafer manufacturing process according to this embodiment. This is a perspective view showing a schematic configuration of a bonding apparatus according to another embodiment. This is a perspective view showing a schematic configuration of a bonding apparatus according to another embodiment. This is a perspective view showing a schematic configuration of a bonding apparatus according to another embodiment. This is a side view showing a schematic configuration of a tape frame that holds multiple dies. This is an explanatory diagram schematically showing some steps of the dion wafer manufacturing process according to another embodiment.

[0008] The joining apparatus, processing system, and joining method according to this embodiment will be described below with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0009] In this embodiment, a diion wafer manufacturing process is carried out, and as shown in Figure 1, multiple dies D are mounted on a wafer W serving as a substrate. Specifically, as shown in Figure 2, multiple dies D held by carrier C serving as die carriers are bonded to the wafer W to be mounted.

[0010] As shown in Figures 1 and 2, the die D has a structure in which, for example, a silicon layer S and a device layer E are stacked. A circuit is formed on the device layer E. In the die D, the side on which the device layer E is formed is called the surface Da, and the side opposite to surface Da is called the back surface Db. Surface Da is the bonding surface to which the die D is bonded to the wafer W.

[0011] As shown in Figure 1, the wafer W on which the die D is mounted is a semiconductor wafer, such as a silicon substrate or a glass substrate, used in the semiconductor device manufacturing process. For example, the wafer W has a diameter of 300 mm and a thickness of approximately 800 μm. On the wafer W, the side on which the die D is mounted is called the surface Wa, and the side opposite to the surface Wa is called the back surface Wb. The surface Wa is the bonding surface to which the device layer E on the surface Da side of the die D is bonded.

[0012] The number and arrangement of dies D mounted on the surface Wa of the wafer W are set to a desired pattern. Furthermore, a device layer (not shown) may be formed on the surface Wa. Such a device layer is formed to correspond to the device layer E of the die D.

[0013] As shown in Figure 2, the carrier C has an adsorption surface on its upper surface for holding multiple dies D by electrostatic and vacuum adsorption. The carrier C adsorbs and holds the silicon layer S on the back surface Db side of the die D. The carrier C has a structure in which a substrate M and a holding layer N are laminated.

[0014] The substrate M has approximately the same diameter and thickness as the wafer W on which the die D is mounted, for example, a diameter of 300 mm and a thickness of approximately 800 μm. The substrate M is made of any conductive material, such as silicon, aluminum, aluminum alloy, stainless steel, alumina, zirconia, SiC, or titanium. In other words, a silicon substrate may be used as the substrate M. The substrate M may have approximately the same diameter as the wafer W on which the die D is mounted, but with a different thickness (for example, 500 μm to 1000 μm) than the wafer W.

[0015] Multiple through-holes H are formed in the substrate M, penetrating in the thickness direction. These multiple through-holes H can be formed at any position on the adsorption surface of the carrier C. For example, one through-hole H may be formed corresponding to each of the multiple dies D held by the carrier C, in other words, the same number as the multiple dies D held by the carrier C. Alternatively, multiple through-holes H may be formed corresponding to each of the multiple dies D held by the carrier C, in other words, more than the number of dies D held by the carrier C.

[0016] Furthermore, while the number, size, spacing, and arrangement of through-holes H are not particularly limited, it is desirable to determine the number, size, and spacing so as to ensure sufficient strength (rigidity) to prevent deformation such as bending in the carrier C. For example, the diameter of the through-holes H is 0.5 mm to 5.0 mm, and the spacing (distance between the centers of adjacent through-holes H) is 0.5 mm to 5.0 mm.

[0017] The retaining layer N is a layer formed on the surface of the substrate M and constitutes the adsorption surface of the die D on the carrier C. The retaining layer N does not have through holes and covers the surface of the substrate M. The thickness of the retaining layer N is sufficient to hold the die D on the carrier C by electrostatic adsorption, for example, several tens of micrometers.

[0018] The retaining layer N is composed of a material that is thermoplastic, flexible, and insulating, such as polyimide or EVA (ethylene vinyl acetate copolymer). In this embodiment, "the retaining layer N is thermoplastic" means that it can flow and soften at a predetermined temperature, for example, 80°C, and be remolded. Furthermore, "the retaining layer N is flexible" means that the elastic modulus of the retaining layer N on the substrate M is 2 GPa or less, preferably 0.5 GPa or less. Furthermore, "the retaining layer N is insulating" means that the dielectric breakdown voltage of the retaining layer N on the substrate M is 30 kV or more, preferably 40 kV or more.

[0019] In this embodiment, the carrier C is configured as described above, and by generating an electrostatic (Coulomb) force between the carrier C and the die D, the die D is adsorbed and held on the adsorption surface.

[0020] Furthermore, in this embodiment, the carrier C has a retaining layer N formed from a flexible material with a low modulus of elasticity. After the die D is placed on the carrier C, a gap is formed between the die D and the retaining layer N before the die D is adsorbed and held by electrostatic force. Due to the flexibility of this retaining layer N, when the die D is adsorbed by electrostatic force on the carrier C, the force with which the die D is adsorbed to the retaining layer N causes air to escape from between the die D and the retaining layer N, creating a pseudo-vacuum state between the die D and the retaining layer N. As a result, in addition to electrostatic adsorption by electrostatic force, a vacuum adsorption force formed by the pseudo-vacuum state is generated between the carrier C and the die D, creating a strong retaining state using both electrostatic and vacuum adsorption forces.

[0021] The method of holding the die D with the carrier C is not limited to this embodiment. For example, the die D may be pressed against the carrier C. In this case, pressing the die D against the carrier C allows air to escape from between the die D and the holding layer N, creating a vacuum adsorption force between the die D and the holding layer N, and the die D is adsorbed and held by the carrier C. When pressing the die D against the carrier C, the holding layer N may be heated. In this case, since the holding layer N is thermoplastic, the holding layer N softens, making it easier for the die D to be adsorbed and held by the carrier C. The material of the base material M in the carrier C does not need to be conductive and is arbitrary. Similarly, the material of the holding layer N only needs to be thermoplastic and flexible; it does not need to be insulating and is arbitrary.

[0022] Alternatively, for example, an adhesive sheet may be used for the retaining layer N of the carrier C. In this case, an adhesive force is generated between the die D and the retaining layer N, and the die D is held in place by the carrier C. A heat-release sheet may also be used for the retaining layer N. A heat-release sheet is adhesive at room temperature but peels off when heated. As will be described later, when bonding the die D to the wafer W, the die D is detached from the carrier C. Heating the retaining layer N at this time can make it easier to detach the die D.

[0023] Next, the processing system 1 according to this embodiment will be described. In the processing system 1, multiple dies D held on a carrier C are bonded to a wafer W for mounting. Figure 3 is a plan view showing a schematic configuration of the processing system 1.

[0024] As shown in Figure 3, the processing system 1 has a configuration in which the loading / unloading station 10 and the processing station 20 are connected as an integrated unit. At the loading / unloading station 10, for example, hoops Fw and Fc, each capable of accommodating multiple wafers W and multiple carriers C, are loaded and unloaded from the outside. The processing station 20 is equipped with various processing devices for realizing a series of processes described later.

[0025] A hoop mounting platform 30 is provided at the loading / unloading station 10. In the illustrated example, multiple hoops, for example, two hoops Fw and two hoops Fc, are placed on the hoop mounting platform 30 in a line along the Y-axis. The number and arrangement of hoops Fw and Fc placed on the hoop mounting platform 30 are not limited to this embodiment and can be determined arbitrarily.

[0026] A transport device 40 is provided adjacent to the hoop mounting table 30 on the positive X-axis side. The transport device 40 is configured to move freely along a transport path 41 extending in the Y-axis direction. The transport device 40 also has, for example, two transport arms 42, 42 that hold and transport the wafer W and carrier C. Each transport arm 42 is configured to move freely in the horizontal direction, vertical direction, around the horizontal axis, and around the vertical axis, and is configured to transport the wafer W and carrier C to the hoops Fw, Fc of the hoop mounting table 30, the transition stage 60 (described later), and the buffer device 61 (described later).

[0027] The processing station 20 is provided with, for example, two processing blocks 21 and 22. The first processing block 21 and the second processing block 22 are arranged in this order from the negative X-axis side to the positive X-axis side.

[0028] The first processing block 21 is equipped with a transport device 50, a transition stage 60, a buffer device 61, a transport device 70, a transition stage 80, a wafer modification device 90, a die modification device 91, a wafer cleaning device 100, a die cleaning device 101, a wafer hydrophilization device 102, and a die hydrophilization device 103. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined arbitrarily.

[0029] The transport device 50 is configured to move freely along a transport path 51 extending in the X-axis direction. The transport device 50 also has, for example, two transport arms 52, 52 that hold and transport the wafer W and the carrier C. Each transport arm 52 is configured to move freely in the horizontal direction, vertical direction, around the horizontal axis and around the vertical axis, and is configured to transport the wafer W and carrier C to the transition stage 60, buffer device 61, transition stage 80, wafer cleaning device 100, die cleaning device 101, wafer hydrophilization device 102 and die hydrophilization device 103, the transition stage 120 (described later), and the buffer device 121 (described later).

[0030] The transition stage 60 and buffer device 61 are positioned on the negative X-axis side of the transport device 50. The transition stage 60 and buffer device 61 are stacked vertically from top to bottom in this order. Multiple buffer devices 61 may be stacked.

[0031] The transition stage 60 transfers the wafer W and carrier C between the transport device 40 and the transport device 50. The buffer device 61 temporarily stores the wafer W and carrier C.

[0032] The transport device 70, transition stage 80, wafer modification device 90, and die modification device 91 are arranged on the positive Y-axis side of the transport device 50. Two transition stages 80 are arranged side by side in the X-axis direction on the negative Y-axis side of the transport device 70. The wafer modification device 90 and die modification device 91 are arranged in this order from the negative X-axis side to the positive X-axis side, with the transport device 70 and the two transition stages 80 in between.

[0033] The transport device 70 has, for example, two transport arms 71, 71 that hold and transport the wafer W and the carrier C. Each transport arm 71 is configured to be movable in the horizontal direction, vertical direction, around the horizontal axis and around the vertical axis, and is configured to transport the wafer W and the carrier C to the transition stage 80, the wafer modification device 90 and the die modification device 91.

[0034] The transition stage 80 transfers the wafer W and carrier C between the transfer device 50 and the transfer device 70.

[0035] The wafer modification apparatus 90 modifies the surface Wa of the wafer W using plasma. In the wafer modification apparatus 90, for example, under a reduced pressure atmosphere, the processing gas, such as oxygen gas, nitrogen gas, or argon gas, is excited and converted into plasma and ionized. These oxygen ions, nitrogen ions, argon ions, etc., are irradiated onto the surface Wa of the wafer W, and the surface Wa is plasma-treated and modified.

[0036] The die modification apparatus 91, like the wafer modification apparatus 90, modifies the surface Da of the die D using plasma. In the die modification apparatus 91, for example, under a reduced pressure atmosphere, the processing gas, such as oxygen gas, nitrogen gas, or argon gas, is excited, turned into plasma, and ionized. These oxygen ions, nitrogen ions, argon ions, etc., are irradiated onto the surface Da of the die D, and the surface Da is plasma-treated and modified.

[0037] The wafer cleaning device 100, die cleaning device 101, wafer hydrophilization device 102, and die hydrophilization device 103 are arranged on the negative Y-axis side of the transport device 50. The wafer cleaning device 100 and the wafer hydrophilization device 102 are stacked in this order from the top in the vertical direction. The die cleaning device 101 and the die hydrophilization device 103 are stacked in this order from the top in the vertical direction. The wafer cleaning device 100 and the die cleaning device 101 are arranged in this order from the negative X-axis side to the positive X-axis side. The wafer hydrophilization device 102 and the die hydrophilization device 103 are arranged in this order from the negative X-axis side to the positive X-axis side.

[0038] The wafer cleaning apparatus 100 cleans the surface Wa of the wafer W. In the wafer cleaning apparatus 100, a cleaning solution, such as pure water, DI water, DHF, or IPA, is supplied onto the wafer W while it is being rotated, for example, by a spin chuck. The supplied cleaning solution then diffuses over the surface Wa of the wafer W, and the surface Wa is cleaned.

[0039] The die cleaning apparatus 101 also cleans the surface Da of the die D, similar to the wafer cleaning apparatus 100. In the die cleaning apparatus 101, a cleaning solution is supplied onto the die D held on the carrier C while the carrier C held in the chuck is rotated. The supplied cleaning solution then diffuses over the surface Da of the die D, and the surface Da is cleaned.

[0040] The wafer hydrophilization apparatus 102 hydrophilizes and rinses the surface Wa of the wafer W. In the wafer hydrophilization apparatus 102, for example, the wafer W held in a spin chuck is rotated while pure water is supplied onto the wafer W. As a result, the supplied pure water diffuses over the surface Wa of the wafer W, making the surface Wa hydrophilic. The surface Wa is also rinsed by the pure water.

[0041] The die hydrophilization apparatus 103, like the wafer hydrophilization apparatus 102, hydrophilizes and rinses the surface Da of the die D. In the die hydrophilization apparatus 103, for example, a carrier C held in a spin chuck is rotated while a cleaning solution is supplied onto the die D held in the carrier C. The supplied cleaning solution then diffuses over the surface Da of the die D, making the surface Da hydrophilic. The surface Da is then rinsed with pure water.

[0042] The second processing block 22 is equipped with a transport device 110, a transition stage 120, a buffer device 121, and a bonding device 130. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined arbitrarily.

[0043] The transfer device 110 is configured to be movable on a transfer path 111 extending in the X-axis direction. The transfer device 110 has, for example, two transfer arms 112, 112 that hold and transfer the wafer W and the carrier C. Each transfer arm 112 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis, and is configured to be able to transfer the wafer W and the carrier C to the transition stage 120, the buffer device 121, and the bonding device 130.

[0044] The transition stage 120 and the buffer device 121 are arranged on the negative X-axis side of the transfer device 110. The transition stage 120 and the buffer device 121 are provided stacked in this order from the upper stage in the vertical direction. Note that a plurality of buffer devices 121 may be provided stacked.

[0045] The transition stage 120 transfers the wafer W and the carrier C between the transfer device 50 and the transfer device 110. The buffer device 121 temporarily stores the wafer W and the carrier C.

[0046] Two bonding devices 130 are arranged, for example, in the positive Y-axis direction of the transfer device 110, and two bonding devices 130 are arranged in the negative Y-axis direction of the transfer device 110. The bonding device 130 picks up the die D held by the carrier C and bonds it to the surface Wa of the wafer W. The details of the configuration of the bonding device 130 will be described later.

[0047] In the above processing system 1, at least one control device 140 is provided. The control device 140 processes computer-executable instructions for causing the processing system 1 to execute various processes described in the present disclosure. The control device 140 can be configured to control each element of the processing system 1 to execute various processes described herein. In one embodiment, part or all of the control device 140 may be included in the processing system 1. The control device 140 may include a processing unit, a storage unit and a communication interface. The control device 140 is realized by, for example, a computer. The processing unit can be configured to read a program that provides logic or routines enabling various control operations from the storage unit and perform various control operations by executing the read program. This program may be stored in the storage unit in advance or may be acquired via a medium when necessary. The acquired program is stored in the storage unit and read from the storage unit by the processing unit and executed. The medium may be various computer-readable storage media or may be a communication line connected to the communication interface. The storage media may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or may be one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the processing system 1 via a communication line such as a LAN (Local Area Network).

[0048] Note that although the processing system 1 according to the present embodiment is configured as described above, other processing devices may be further arranged in the processing system 1 according to the purpose, and part of the processing devices may be arranged outside the processing system 1 according to the purpose.

[0049] For example, the processing system 1 may be equipped with an inspection device for inspecting a wafer W on which a die D is mounted. The inspection device may, for example, use an IR camera to image the wafer W and inspect for the presence or absence of voids between the surface Wa of the wafer W and the die D.

[0050] For example, the wafer modification apparatus 90 and the die modification apparatus 91 may be made common, and the surface Wa of the wafer W or the surface Da of the die D may be modified in the common modification apparatus. Alternatively, the wafer cleaning apparatus 100 and the die cleaning apparatus 101 may be made common, and the surface Wa of the wafer W or the surface Da of the die D may be cleaned in the common cleaning apparatus. Furthermore, the wafer hydrophilization apparatus 102 and the die hydrophilization apparatus 103 may be made common, and the surface Wa of the wafer W or the surface Da of the die D may be made hydrophilic in the common hydrophilization apparatus.

[0051] Next, the configuration of the joining device 130 described above will be explained. Figure 4 is a perspective view showing a schematic configuration of the joining device 130.

[0052] As shown in Figure 4, the bonding apparatus 130 has a frame 200. The frame 200 is divided into a first frame (pickup area) 201 and a second frame (bonding area) 202. The first frame 201 and the second frame 202 are arranged side by side in the horizontal direction (X-axis direction). In the pickup area, which is the first frame 201, the die D held by the carrier C is detached from the carrier C and picked up. In the bonding area, which is the second frame 202, the die D picked up by the first frame 201 is bonded to the wafer W. In the illustrated example, the bonding apparatus 130 is located on the negative Y-axis side of the transport device 50, and the transport device 50 is located on the positive Y-axis side of the frame 200.

[0053] Below the frame 200, a seismic damping mechanism 210 is provided to dampen the frame 200 by vibration. The seismic damping mechanism 210 has a support base 211 and dampers 212. The support base 211 supports a plurality of dampers 212, for example, four dampers 212. The plurality of dampers 212 support the lower surface of the frame 200 and dampen the frame 200 by vibration.

[0054] In this embodiment, the first frame 201 and the second frame 202 are provided integrally in the frame 200, but they may be provided separately. In this case, a seismic damping mechanism may be provided for each of the first frame 201 and the second frame 202.

[0055] The first frame 201 is provided with a carrier holding section 220, which serves as a die carrier holding section. The carrier holding section 220 has the holding surface of the carrier C on its upper surface and holds the carrier C from below with the respective surfaces Da of the multiple dies D held by the carrier C facing upward.

[0056] A moving mechanism 221 is provided below the carrier holding section 220. The moving mechanism 221 supports the carrier holding section 220 and moves the carrier holding section 220 in the horizontal direction (X-axis direction and Y-axis direction). The moving mechanism 221 is supported by the first frame 201. The drive unit (not shown) of the moving mechanism 221 is not particularly limited, but for example, a linear motor may be used.

[0057] A detachment section 230 is provided inside the carrier holding section 220. The detachment section 230 detaches the die D from the suction surface of the carrier C. The detachment section 230 is configured to be detachably attached to and replaceable from the carrier holding section 220.

[0058] The detachment section 230 has an air supply hole (not shown) for supplying air. The detachment section 230 supplies air through the air supply hole to the through hole H of the carrier C held by the carrier holding section 220, and further supplies air to the back surface Db side of the die D on the carrier C through the through hole H. As a result, pressure is applied to the die D by the air, which reduces the adhesion force between the die D and the holding layer N on the adsorption surface of the carrier C. This allows the die D to be detached from the adsorption surface of the carrier C.

[0059] Furthermore, the detachment section 230 has a push-up pin (not shown) that is configured to move up and down. The detachment section 230 uses the push-up pin to push up the die D on the carrier C held by the carrier holding section 220 from below, thereby detaching the die D from the suction surface of the carrier C.

[0060] In this embodiment, the detachment portion 230 may be equipped with both an air supply hole and a push-up pin, or it may be equipped with either one or the other.

[0061] A die transport unit 240 is provided above the carrier holding unit 220. For example, a collet is used in the die transport unit 240. As shown in Figure 5, the die transport unit 240 picks up the die D from the carrier C, transports the die D with its surface Da facing upward, and then transfers the die D to the die joining unit 280, which will be described later. Specifically, the die transport unit 240 holds the die D, which has become loose due to the reduced adhesion force between it and the holding layer N caused by the detachment unit 230, and detaches it from the carrier C, and then transports the held die D from the first frame 201 to the second frame 202.

[0062] The die transport unit 240 receives and holds the die D on the carrier C from above. The method of holding the die D by the die transport unit 240 is arbitrary. However, since the surface Da of the die D held by the die transport unit 240 is the device surface of the device layer E, it is necessary that the die D is held by the die transport unit 240 in a way that does not damage the device surface. For example, the die transport unit 240 may use a non-contact chuck that can hold the die D from above without contact by utilizing the Bernoulli effect or the ultrasonic squeeze effect. Alternatively, instead of holding the surface Da of the die D, the die transport unit 240 may be configured to hold the die D by clamping the side surface of the die D, which has been lifted by, for example, the supply of air.

[0063] As shown in Figure 4, the die transport unit 240 is provided with a moving mechanism 250. The moving mechanism 250 has a support part 251, an arm 252, a rail 253, and a support column 254. The support part 251 supports the die transport unit 240. The tip of the arm 252 supports the support part 251, and the base end is attached to the rail 253. The rail 253 extends in the X-axis direction and is supported by a pair of support columns 254, 254. The pair of support columns 254, 254 are supported by the first frame 201.

[0064] The die transport unit 240, support unit 251, and arm 252 are configured to be movable in the X-axis direction along the rail 253 by a drive unit (not shown). Furthermore, the die transport unit 240, support unit 251, and arm 252 are configured to be movable in the Y-axis direction by the drive unit. In addition, the die transport unit 240 and support unit 251 are configured to be movable in the vertical direction by the drive unit. The drive source for the drive unit is not particularly limited, but a linear motor, for example, can be used.

[0065] The second frame 202 is provided with a wafer holder 260, which serves as a substrate holder. As shown in Figure 5, the wafer holder 260 has the wafer W's holding surface on its lower surface and holds the wafer W from above with the wafer W's surface Wa facing downwards.

[0066] As shown in Figure 4, a moving mechanism 270 is provided in the wafer holder 260. The moving mechanism 270 has rails 271 and support columns 272. The rails 271 extend in the Y-axis direction and are provided in pairs, arranged in the X-axis direction on either side of the wafer holder 260. The pair of rails 271, 271 support the wafer holder 260. Each rail 271 is supported by a pair of support columns 272, 272. The pair of support columns 272, 272 are supported by a second frame 202.

[0067] The wafer holder 260 is configured to be movable along the rail 271 in the Y-axis direction by a drive unit (not shown). The drive source for the drive unit is not particularly limited, but a linear motor can be used, for example.

[0068] A die bonding section 280 is provided below the wafer holding section 260. The die bonding section 280 is also referred to as a bond head. As shown in Figure 5, the die bonding section 280 receives and holds the die D from the die transport section 240, and then transports the die D to the wafer W with its surface Da facing upwards, thereby bonding the die D to the wafer W. The die bonding section 280 is configured to be detachably attached to and replaceable with respect to the support section 291 of the moving mechanism 290, which will be described later.

[0069] The die joint 280 receives and holds the die D held by the die transport unit 240 from below. The method of holding the die D by the die joint 280 is arbitrary. Since the back surface Db of the die D held by the die joint 280 is a silicon layer S, the die joint 280 does not necessarily have to be constructed by a non-contact chuck or the like, unlike the die transport unit 240. For example, a vacuum chuck may be used for the die joint 280, and the die joint 280 may hold the die D by vacuuming it with a vacuum mechanism (not shown).

[0070] As shown in Figure 4, a moving mechanism 290 is provided in the die joint 280. The moving mechanism 290 has a support portion 291, a stage 292, a first rail 293, and a second rail 294. The support portion 291 supports the die joint 280. The stage 292 supports the support portion 291 on its upper surface and is attached to the first rail 293 on its lower surface. The first rail 293 extends in the X-axis direction, and both ends are attached to a pair of second rails 294, 294. The second rails 294 extend in the Y-axis direction and are provided in pairs side by side in the X-axis direction, flanking the wafer holding portion 260. The pair of second rails 294, 294 are supported by a second frame 202.

[0071] The die joint 280, support 291, and stage 292 are configured to be movable in the X-axis direction along the first rail 293 by a drive unit (not shown). Furthermore, the die joint 280, support 291, stage 292, and first rail 293 are configured to be movable in the Y-axis direction along a pair of second rails 294, 294 by a drive unit. That is, the die joint 280 is configured to be movable in the horizontal direction (X-axis and Y-axis direction). The die joint 280 is also configured to be movable in the vertical direction by a drive unit. Moreover, the die joint 280 is configured to be movable around the vertical axis (θ-axis) by a drive unit. The drive source for the drive unit is not particularly limited, but for example, a linear motor can be used.

[0072] The second mounting base 202 is provided with a first imaging unit 300, a second imaging unit 301, and a third imaging unit 302.

[0073] The first imaging unit 300 is located above the die bonding portion 280 and is provided on the wafer holding portion 260. For example, a camera is used for the first imaging unit 300. The first imaging unit 300 images at least two points on the surface Da of the die D held by the die bonding portion 280. The first imaging unit 300 is fixed and moves the die bonding portion 280 horizontally to image at least two points on the surface Da. The captured image is output to the control device 140, and the position of the die D held by the die bonding portion 280 is measured in the control device 140.

[0074] The second imaging unit 301 is located below the wafer holding unit 260 and is provided on the stage 292 of the moving mechanism 290. The second imaging unit 301 is configured to be movable horizontally (in the X-axis and Y-axis directions) and vertically by the drive unit of the moving mechanism 290.

[0075] A camera, for example, is used in the second imaging unit 301. The second imaging unit 301 images at least two points on the surface Wa of the wafer W held by the wafer holding unit 260. The die bonding unit 280 is moved horizontally so that the wafer holding unit 260 images at least two points on the surface Wa. The captured image is output to the control device 140, and the control device 140 measures the position of the wafer W held by the wafer holding unit 260.

[0076] The control device 140 adjusts the position of the die D relative to the wafer W based on the position of the die D measured using the first imaging unit 300 and the position of the wafer W measured using the second imaging unit 301. Specifically, the control device 140 controls the moving mechanism 290 to move the die D held in the die bonding unit 280, adjusting the position of the die D relative to the wafer W so that the die D is bonded to the wafer W in an appropriate position.

[0077] As described above, the position of the die D relative to the wafer W is adjusted using the first imaging unit 300 and the second imaging unit 301. However, since the first imaging unit 300 and the second imaging unit 301 move slightly over time, alignment is required at a desired timing. A glass plate 310 is used for this alignment. The glass plate 310 is provided with at least two marks 311. The glass plate 310 moves horizontally between the first imaging unit 300 and the second imaging unit 301, supported by a moving mechanism (not shown).

[0078] As shown in Figure 6, the first imaging unit 300 and the second imaging unit 301 each capture images of the mark 311 on the glass plate 310. The images captured by the first imaging unit 300 and the images captured by the second imaging unit 301 are output to the control device 140. The control device 140 aligns the first imaging unit 300 and the second imaging unit 301 so that the positions of the mark 311 in these two images match. Specifically, the control device 140 controls the movement mechanism 290 to align the relative horizontal positions (X-axis and Y-axis directions) and vertical (θ-axis) positions of the first imaging unit 300 and the second imaging unit 301.

[0079] As shown in Figure 4, the third imaging unit 302 is located below the wafer holding unit 260 and is provided on the stage 292 of the moving mechanism 290. The third imaging unit 302 is configured to be movable horizontally (in the X-axis and Y-axis directions) and vertically by the drive unit of the moving mechanism 290.

[0080] For example, an IR camera is used in the third imaging unit 302. The third imaging unit 302 images the die D bonded (mounted) to the wafer W from below. The captured image is output to the control device 140, where the position of the die D relative to the wafer W is measured. In other words, the control device 140 inspects the bonding accuracy of the die D to the wafer W.

[0081] Next, the dion wafer manufacturing process performed in the processing system 1 configured as described above will be explained. Figure 7 is a flowchart showing the main steps of the dion wafer manufacturing process. Figure 8 is an explanatory diagram schematically showing some steps of the dion wafer manufacturing process.

[0082] First, hoops Fw and Fc, each containing multiple wafers W and carriers C respectively, are placed on the hoop mounting table 30 of the loading / unloading station 10. At this time, as shown in Figure 8(a), the wafers W are stored with their surface Wa facing upwards. Also, as shown in Figure 8(b), multiple dies D are held in the carrier C, and the surface of the carrier C (the surface Da of the die D) is stored with its surface facing upwards.

[0083] Next, the wafer W inside the hoop Fw is removed by the transport device 40 and transported to the transition stage 60. The wafer W transported to the transition stage 60 is then transported to the wafer cleaning device 100 by the transport device 50. In the wafer cleaning device 100, the surface Wa of the wafer W is cleaned, for example, with a cleaning solution (St1 in Figure 7).

[0084] Next, the wafer W is transported to the transition stage 80 by the transport device 50, and then to the wafer modification device 90 by the transport device 70. In the wafer modification device 90, plasma treatment is performed, for example, under a reduced pressure atmosphere, and the surface Wa of the wafer W is modified (St2 in Figure 7).

[0085] Next, the wafer W is transported to the transition stage 80 by the transport device 70, and then to the wafer hydrophilization device 102 by the transport device 50. In the wafer hydrophilization device 102, for example, pure water is used to attach hydroxyl groups (silanol groups) to the surface Wa of the wafer W modified with St2, thereby hydrophilizing the surface Wa. The surface Wa is also rinsed with the same pure water (St3 in Figure 7).

[0086] Next, the wafer W is transported to the transition stage 120 by the transport device 50, and then to the bonding device 130 by the transport device 110. At this time, the transport arm 112 that holds the wafer W is rotated in the transport device 110 to invert the front and back surfaces of the wafer W (St4 in Figure 7). Then, as shown in Figure 8(c), the wafer W is transported to the bonding device 130 with its back surface Wb facing upwards. If bonding processing has already been performed in four bonding devices 130, the wafer W is transported to the buffer device 121 and temporarily stored in the buffer device 121.

[0087] While the wafer W is undergoing the St1 to St4 processes described above, the die D held in the carrier C is processed. First, the carrier C in the hoop Fc is removed by the transport device 40 and transported to the transition stage 60. The carrier C transported to the transition stage 60 is then transported to the die cleaning device 101 by the transport device 50. In the die cleaning device 101, the surface Da of the die D is cleaned, for example, with a cleaning solution (St5 in Figure 7).

[0088] Next, carrier C is transported to the transition stage 80 by the transport device 50, and then to the die modifying device 91 by the transport device 70. In the die modifying device 91, plasma treatment is performed, for example, under a reduced pressure atmosphere, and the surface Da of die D is modified (St6 in Figure 7).

[0089] Next, carrier C is transported to transition stage 80 by transport device 70, and then to die hydrophilization device 103 by transport device 50. In die hydrophilization device 103, for example, hydroxyl groups (silanol groups) are attached to the surface Da of die D modified with St6 by pure water, and the surface Da is made hydrophilic. The surface Da is also rinsed with the same pure water (St7 in Figure 7).

[0090] Next, carrier C is transported to the transition stage 120 by the transport device 50, and then to the joining device 130 by the transport device 110. If joining processing has already been performed in the four joining devices 130, carrier C is transported to the buffer device 121 and temporarily stored in the buffer device 121.

[0091] As described above, the wafer W that has undergone St1 to St4 processing is transported to the bonding apparatus 130, and the carrier C that has undergone St5 to St7 processing is also transported to the bonding apparatus 130. In the bonding apparatus 130, the multiple dies D held on the carrier C are bonded to the wafer W (St8 in Figure 7).

[0092] In St8, the bonding apparatus 130 transfers the wafer W from the transport arm 112 to the wafer holder 260, which is waiting at the transfer position. At this time, the wafer W is held by the wafer holder 260 from above with its surface Wa facing downwards. The wafer holder 260 is then moved in the negative Y-axis direction to the processing position. In St8, once the wafer holder 260 has moved to the processing position, it remains fixed in place and does not move from the processing position for subsequent processing.

[0093] Furthermore, in the joining device 130, the carrier C is transferred from the transport arm 112 to the carrier holding unit 220. At this time, the carrier C is held by the carrier holding unit 220 from below with the surface Da of the die D facing upward.

[0094] Next, the detachment section 230 lifts one of the multiple dies D on the carrier C held by the carrier holding section 220, which is to be joined, away from the suction surface of the carrier C.

[0095] Next, the die transport unit 240 is lowered, and the surface Da of one of the dies D to be joined, which has been lifted up, is held by the die transport unit 240. Note that the holding of the die D by the die transport unit 240 may be performed before the die D is lifted up by the release unit 230, or it may be performed simultaneously with the lifting of the die D by the release unit 230. Subsequently, the die transport unit 240 is raised, and the die D is picked up from the carrier C as shown in Figures 5 and 8(d).

[0096] Next, the die transport unit 240 is moved in the positive X-axis direction to below the die joining unit 280. Subsequently, the die D is transferred from the die transport unit 240 to the die joining unit 280. At this time, as shown in Figure 5, the die D is held in the die joining unit 280 with its surface Da facing upwards.

[0097] Next, the die joint 280 is moved below the first imaging unit 300, and the first imaging unit 300 images at least two points of the die D held by the die joint 280 from above. The captured images are output to the control device 140, and the control device 140 measures the position of the die D held by the die joint 280.

[0098] Next, the second imaging unit 301 is moved, and at least two points of the wafer W held in the wafer holding unit 260 are imaged from below by the second imaging unit 301. The imaged images are output to the control device 140, and the control device 140 measures the position of the wafer W held in the wafer holding unit 260. Based on the position of the die D measured using the first imaging unit 300 and the position of the wafer W measured using the second imaging unit 301, the control device 140 adjusts the position of the die D relative to the wafer W (the relative position of the wafer W and the die D) so that the die D is joined to the wafer W in an appropriate position.

[0099] Next, as shown in Figures 5 and 8(e), the die bonding portion 280 is raised, and the surface Da of the die D held by the die bonding portion 280 is superimposed on the surface Wa of the wafer W, and the die D is pressed to bond the die D to the wafer W. Subsequently, the die bonding portion 280 is lowered.

[0100] In this process, the surface Wa of wafer W and the surface Da of die D are modified at St2 and St6, respectively. First, van der Waals forces (intermolecular forces) are generated between the surfaces Wa and Da, and these surfaces Wa and Da are joined together. Furthermore, since the surface Wa of wafer W and the surface Da of die D are hydrophilized at St3 and St7, respectively, the hydrophilic groups between the surfaces Wa and Da form hydrogen bonds (intermolecular forces), and the surfaces Wa and Da are firmly joined together.

[0101] The bonding operation of the die D to the wafer W is performed as described above. This process of picking up the die D from the carrier C and bonding the die D to the wafer W is repeated, and multiple dies D are bonded to the wafer W and mounted as shown in Figure 8(f).

[0102] Once the die D is bonded to all desired positions on the wafer W, the third imaging unit 302 is moved, and the third imaging unit 302 images the die D mounted on the wafer W from below. The captured image is output to the control device 140, where the position of the die D relative to the wafer W is measured, and the bonding accuracy of the die D to the wafer W is inspected.

[0103] In St8, once all the dies D held in the carrier C are bonded to the wafer W, the carrier C is transported by the transport device 110 to the transition stage 120, then by the transport device 50 to the transition stage 60, and further by the transport device 40 to the hoop Fc. On the other hand, if any dies D remain in the carrier C after St8, the carrier C remains in the bonding device 130, and the dies D may be bonded to the subsequent wafer W. Alternatively, if any dies D remain in the carrier C after St8, the carrier C may be transported by the transport device 110 to the buffer device 121 and temporarily stored in the buffer device 121.

[0104] Meanwhile, in St8, once the die D is bonded to all desired positions on the wafer W, the wafer W is transported by the transport device 110 to the transition stage 120, then by the transport device 50 to the transition stage 60, and further by the transport device 40 to the hoop Fw. In this way, the series of dion wafer manufacturing processes is completed.

[0105] Furthermore, the hoop from which the wafer W and carrier C are recovered does not necessarily have to be the same hoop that contained the wafer W and carrier C at the time of delivery. That is, for example, the hoops that contained the wafer W and carrier C may each deliver different components, or new hoops for delivering the wafer W and carrier C may be delivered to the processing system 1.

[0106] In conventional dyon wafer manufacturing processes, dies (chips) are bonded to wafers using a flip-chip mounting technique. For example, in the aforementioned Patent Document 1, a die (chip) with its surface facing upward is picked up, the front and back surfaces of the die are flipped using a flipping mechanism, and then the die with its surface facing downward is pressed onto the wafer for bonding. In this respect, according to this embodiment, in St8, the bonding apparatus 130 processes the die D with its surface Da always facing upward. That is, there is no need to perform a flipping operation of the die D as in the conventional method. Therefore, the throughput of the bonding process can be improved, and the productivity of the resulting wafer W can be increased.

[0107] Furthermore, in conventional technology, when the front and back surfaces of the die are inverted, particles are generated by this inversion operation and adhere to the wafer, affecting the wafer quality. In this respect, according to this embodiment, since the die D is not inverted in the bonding apparatus 130 at St8, particles can be reduced and adhesion to the wafer W can be suppressed. As a result, the quality of the resulting wafer W can be improved.

[0108] Furthermore, in the conventional technology, the die bonding head that holds the die is positioned above the wafer holding section (stage) that holds the wafer. The die bonding head is then lowered to bond the die held by the die bonding head to the wafer. In this case, because the die bonding head is positioned above the wafer holding section, the rigidity of the movement mechanism for moving the die bonding head cannot be ensured, resulting in so-called Abbe error, and consequently, the bonding accuracy of the die bonding head cannot be improved. Also, because the rigidity of the movement mechanism of the die bonding head cannot be ensured, the axial acceleration and movement speed of the die bonding head cannot be increased, and the productivity of wafers cannot be improved. In this regard, according to this embodiment, the die bonding head 280 that holds the die D is positioned below the wafer holding section 260 that holds the wafer W. With the wafer holding section 260 that holds the wafer W fixed, the die bonding head 280 is raised to bond the die D held by the die bonding head 280 to the wafer W. In this case, since the moving mechanism 290 for moving the die bonding portion 280 is provided on the frame 200, the rigidity of the moving mechanism 290 can be ensured and Abbe errors can be suppressed. As a result, the die bonding portion 280 can be moved with high precision, and the bonding accuracy of the die D by the die bonding portion 280 can be improved at the nano level. In addition, the axial acceleration and moving speed of the die bonding portion 280 can be increased, improving the throughput of the bonding process and increasing the productivity of the wafer W that becomes the product.

[0109] Furthermore, in the conventional technology, since the die bonding portion is positioned above the wafer holding portion, particles are generated when the die bonding portion is moved by the moving mechanism and may adhere to the wafer positioned below. In such cases, the quality of the wafer is affected. In this respect, according to this embodiment, the wafer holding portion 260 is positioned above the die bonding portion 280, and when the die D is bonded to the wafer W, the wafer holding portion 260 does not move and remains fixed. Therefore, the generation of particles from the wafer holding portion 260 and its moving mechanism 270 can be suppressed. In addition, the generation of particles generated by the moving mechanism 290 of the die bonding portion 280 can be reduced, and the adhesion of particles to the wafer W positioned above can be suppressed. As a result, the quality of the wafer W that becomes the product can be improved.

[0110] According to this embodiment, since the frame 200 is provided with a vibration damping mechanism 210, the frame 200 can be vibration-damped, and furthermore, each part provided on the frame 200 can also be vibration-damped. In this case, for example, the movement accuracy of the movement mechanism 250 of the die transport section 240 can be improved, and the positional accuracy when transferring the die D from the die transport section 240 to the die joining section 280, that is, the holding accuracy of the die D in the die joining section 280 can be improved. In addition, the movement accuracy of the movement mechanism 290 of the die joining section 280 can be improved, and the joining accuracy of the die D by the die joining section 280 can be improved.

[0111] Next, other embodiments of the joining device 130 will be described.

[0112] For example, as shown in Figure 9, the joining device 130 may have multiple die transport units 240, for example, two. The two die transport units 240 are arranged side by side in the Y-axis direction, with die transport unit 240A provided on the positive Y-axis side and die transport unit 240B provided on the negative Y-axis side. Die transport unit 240A is provided with a moving mechanism 250A installed on the positive Y-axis side of the first frame 201, and die transport unit 240B is provided with a moving mechanism 250B installed on the negative Y-axis side of the first frame 201. Moving mechanisms 250A and 250B each have substantially the same configuration as the moving mechanism 250 shown in Figure 4, and include support parts 251A, 251B, arms 252A, 252B, rails 253A, 253B, and support columns 254A, 254B. Note that in Figure 9, the rails 253B and support columns 254B are not shown. The die transport sections 240A and 240B are configured to be movable horizontally by the moving mechanisms 250A and 250B, respectively.

[0113] Furthermore, two detachment sections 230 may be provided. Detachment section 230A is provided corresponding to die transport section 240A, and detachment section 230B is provided corresponding to die transport section 240B.

[0114] Furthermore, for example, in the joining device 130, multiple die joining sections 280 may be provided, for example, two. The two die joining sections 280 are arranged side by side in the Y-axis direction, with die joining section 280A provided on the positive Y-axis side and die joining section 280B provided on the negative Y-axis side. Movement mechanisms 290A and 290B are provided for die joining sections 280A and 280B, respectively. Movement mechanisms 290A and 290B have substantially the same configuration as the movement mechanism 290 shown in Figure 4, and each includes support sections 291A and 291B, stages 292A and 292B, first rails 293A and 293B, and second rails 294. The second rail 294 is provided in common to movement mechanisms 290A and 290B. With respect to the second rail 294, the support portion 291A, stage 292A, and first rail 293A are provided on the positive Y-axis side, while the support portion 291B, stage 292B, and first rail 293B are provided on the negative Y-axis side. The die joint portions 280A and 280B are configured to be movable horizontally by the moving mechanisms 290A and 290B, respectively.

[0115] Furthermore, stages 292A and 292B may be provided with second imaging units 301A and 301B and third imaging units 302A and 302B, respectively. Alternatively, stages 292A and 292B may be provided with either one of the second imaging units 301A and 301B, or with either one of the third imaging units 302A and 302B.

[0116] In this case, similar to the operation shown in Figure 5, the die transport unit 240A picks up die D1 from carrier C and hands it over to die bonding unit 280A, after which die bonding unit 280A bonds die D1 to wafer W. Similarly, the die transport unit 240B picks up die D2 from carrier C and hands it over to die bonding unit 280B, after which die bonding unit 280B bonds die D2 to wafer W. In other words, the bonding of die D1 and die D2 to wafer W are performed in parallel. As a result, the time required for bonding die D to wafer W can be shortened, and the productivity of the resulting wafer W can be improved. In Figure 5, the die transport unit 240 corresponds to die transport units 240A and 240B, the die bonding unit 280 corresponds to die bonding units 280A and 280B, and die D corresponds to die D1 and D2.

[0117] The number and arrangement of the die transport section 240 and die joining section 280 are not limited to this embodiment and can be set arbitrarily. For example, both the die transport section 240 and the die joining section 280 may be provided in multiples, as in this embodiment, or either one may be provided in multiples. The number of die transport sections 240 and die joining sections 280 can be arbitrarily selected according to the required productivity and joining accuracy.

[0118] For example, as shown in Figure 10, in the bonding apparatus 130, the die bonding section 280 and the third imaging section 302 may each be supported by different moving mechanisms. The die bonding section 280 is supported by the stage 292A of the moving mechanism 290A shown in Figure 9, and is configured to be movable in the horizontal direction by the moving mechanism 290A. The third imaging section 302 is supported by the stage 292B of the moving mechanism 290B shown in Figure 9, and is configured to be movable in the horizontal direction by the moving mechanism 290B. Note that the moving mechanism 290A and the moving mechanism 290B correspond to the first moving mechanism and the second moving mechanism in this disclosure, respectively.

[0119] In this case, the die bonding section 280 is moved by the moving mechanism 290A to bond the die D to the wafer W, and then the third imaging section 302 is moved by the moving mechanism 290B to image the die D bonded to the wafer W. The control device 140 then inspects the bonding accuracy of the die D to the wafer W. In other words, the bonding accuracy of the die D to the wafer W can be inspected in near real time, following the bonding of the die D to the wafer W. In this case, the throughput of the bonding process can be improved, and the productivity of the wafer W that becomes the product can be improved.

[0120] For example, as shown in Figure 11, in the joining device 130, multiple second frames 202 may be provided with respect to the first frame 201, for example, two frames. A seismic damping mechanism 210 is provided with both the first frame 201 and the second frame 202. The configuration of each seismic damping mechanism 210 is the same as the configuration of the seismic damping mechanism 210 shown in Figure 4.

[0121] The first frame 201 is provided with, for example, four die transport sections 240. Die transport section 240C is provided on the positive X-axis and positive Y-axis side, die transport section 240D is provided on the negative X-axis and positive Y-axis side, die transport section 240E is provided on the positive X-axis and negative Y-axis side, and die transport section 240F is provided on the negative X-axis and negative Y-axis side. Each of the die transport sections 240C and 240D is provided with a moving mechanism 250C and 250D installed on the positive Y-axis side of the first frame 201. Each of the die transport sections 240E and 240F is provided with a moving mechanism 250E and 250F installed on the negative Y-axis side of the first frame 201. The moving mechanisms 250C and 250D each have substantially the same configuration as the moving mechanism 250A shown in Figure 9, and each includes support parts 251C and 251D, arms 252C and 252D, rails 253A and support columns 254A. Rails 253A and support columns 254A are provided in common to the moving mechanisms 250C and 250D. With respect to rails 253A and support columns 254A, support parts 251C and arms 252C are provided on the positive X-axis side, and support parts 251D and arms 252D are provided on the negative X-axis side. The moving mechanisms 250E and 250D each have substantially the same configuration as the moving mechanism 250B shown in Figure 9, and each includes support parts 251E and 251F, arms 252E and 252F, rails 253B and support columns 254B. Rail 253B and support column 254B are provided in common to the moving mechanisms 250C and 250D. The support part 251C and arm 252D are provided on the positive X-axis side of rail 253B and support column 254B, and the support part 251C and arm 252D are provided on the negative X-axis side. Note that the rail 253B and support column 254B are not shown in Figure 11. The die transport sections 240C, 240D, 240E, and 240F are configured to be movable horizontally by the moving mechanisms 250C, 250D, 250E, and 250F, respectively.

[0122] Furthermore, four detachment sections 230 may also be provided. The four detachment sections 230 correspond to the die transport sections 240C, 240D, 240E, and 240F, respectively. Note that these four detachment sections 230 are not shown in Figure 11.

[0123] Each second frame 202 and the members provided on it have substantially the same configuration as the second frame 202 and the members provided on it shown in Figure 9. That is, each second frame 202 is provided with die joints 280A and 280B and moving mechanisms 290A and 290B.

[0124] In such a case, for example, wafer W1 is held by the wafer holding portion 260 on the positive Y-axis side, and wafer W2 is held by the wafer holding portion 260 on the negative Y-axis side.

[0125] Next, similar to the operation shown in Figure 5, on the positive Y-axis side, the die transport unit 240C picks up die D1 from carrier C and hands it over to die joining unit 280A, after which die joining unit 280A joins die D1 to wafer W1. Also, the die transport unit 240D picks up die D2 from carrier C and hands it over to die joining unit 280B, after which die joining unit 280B joins die D2 to wafer W1. In other words, the joining of die D1 to wafer W1 and the joining of die D2 are performed in parallel. In Figure 5, die transport unit 240 corresponds to die transport units 240C and 240D, die joining unit 280 corresponds to die joining units 280A and 280B, die D corresponds to die D1 and D2, and wafer W corresponds to wafer W1.

[0126] Furthermore, on the positive Y-axis side, the die transport unit 240E picks up die D3 from carrier C and hands it over to die joining unit 280A, after which die joining unit 280A joins die D3 to wafer W2. Also, the die transport unit 240F picks up die D4 from carrier C and hands it over to die joining unit 280B, after which die joining unit 280B joins die D4 to wafer W2. In other words, the joining of die D3 to wafer W2 and the joining of die D4 are performed in parallel. In Figure 5, die transport unit 240 corresponds to die transport units 240E and 240F, die joining unit 280 corresponds to die joining units 280A and 280B, die D corresponds to die D3 and D4, and wafer W corresponds to wafer W2.

[0127] According to this embodiment, the bonding of die D1 to wafer W1 and die D2 is performed in parallel, and the bonding of die D3 to wafer W2 and die D4 is performed in parallel. Furthermore, processing of wafers W1 and W2 is also performed in parallel. As a result, the time required for bonding die D to wafer W can be shortened, and the productivity of the resulting wafer W can be improved.

[0128] The number and arrangement of the first frame 201 and the second frame 202 are not limited to this embodiment and can be set arbitrarily. Similarly, the number and arrangement of the die transport section 240 and the die joining section 280 are not limited to this embodiment and can be set arbitrarily.

[0129] In the embodiments described above, multiple dies D held on a carrier C as a die carrier were bonded to a wafer W for mounting. However, the method of mounting the dies D to the wafer W is not limited to this. For example, multiple dies D held on a tape frame P as a die carrier may be bonded to a wafer W for mounting.

[0130] As shown in Figure 12, the tape frame P has a frame F and a tape T. The frame F has an annular shape and is made of, for example, stainless steel. The tape T is fixed to the back surface of the frame F. The surface of the tape T is adhesive, and a plurality of dies D are held on the surface (adhesive surface) of the tape T. The tape T holds the silicon layer S on the back surface Db side of the dies D.

[0131] Figure 13 is a schematic diagram illustrating some steps of the dion wafer manufacturing process in this embodiment. In this embodiment, a processing system (not shown) having the same apparatus configuration as processing system 1 is used to bond and mount multiple dies D held on a carrier C to a wafer W. In this processing system, the apparatus that processes the dies D held on the carrier C in processing system 1 processes the dies D held on a tape frame P.

[0132] In the processing system according to this embodiment, the surface Wa of the wafer W is sequentially cleaned (St1), modified (St2), hydrophilized, and rinsed (St3). At this time, as shown in Figure 13(a), the wafer W is processed with the surface Wa facing upwards. Next, the wafer W is inverted (St4), and as shown in Figure 13(b), the back surface Wb is facing upwards and transported to the bonding apparatus 130.

[0133] Furthermore, the surface Da of the die D held on the tape frame P is sequentially cleaned (St5), modified (St6), hydrophilized, and rinsed (St7). During this process, as shown in Figure 13(c), the die D is processed with its surface Da facing upwards while still held on the tape frame P. Note that in steps St5 to St7, the carrier C is replaced by the tape frame P, but the actual processing is essentially the same.

[0134] Next, in St8, the multiple dies D held in the tape frame P are bonded to the wafer W. In the bonding apparatus 130, as shown in Figure 13(d), the dies D are picked up from the tape frame P, and then the dies D are bonded to the wafer W as shown in Figure 13(e). This process of picking up the dies D from the tape frame P and placing the dies D on the wafer W is repeated, and multiple dies D are bonded to the wafer W and mounted as shown in Figure 13(f).

[0135] In this embodiment as well, the same effects as in the above embodiment can be enjoyed. That is, the die carrier that holds the die D is arbitrary, and a carrier C may be used, or a tape frame P may be used.

[0136] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0137] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein.

[0138] 130 Bonding device 220 Carrier holding section 240 Die transport section 260 Wafer holding section 280 Die bonding section C Carrier D Die Da Surface P Tape frame W Wafer Wa Surface

Claims

1. A bonding apparatus for bonding a plurality of dies held in a die carrier to a substrate, comprising: a die carrier holding unit that holds the die carrier from below with the bonding surfaces of the plurality of dies facing upward; a substrate holding unit that holds the substrate from above with the bonding surface of the substrate facing downward; a die transport unit that receives the dies from the die carrier and transports the dies with the bonding surfaces of the dies facing upward; and a die bonding unit that receives the dies from the die transport unit and bonds the dies to the substrate with the bonding surfaces of the dies facing upward.

2. The bonding apparatus according to claim 1, comprising: a first imaging unit provided above the die bonding portion for imaging the die held in the die bonding portion; and a second imaging unit provided below the substrate holding portion for imaging the substrate held in the substrate holding portion.

3. The bonding apparatus according to claim 2, wherein the first imaging unit is provided on the substrate holding unit, and the second imaging unit is provided on a moving mechanism for moving the die bonding unit.

4. The bonding apparatus according to claim 1, further comprising a third imaging unit for imaging the die in a state bonded to the substrate, wherein the third imaging unit is provided on a moving mechanism for moving the die bonding portion.

5. The bonding apparatus according to claim 1, further comprising a third imaging unit for imaging the die in a state bonded to the substrate, wherein the third imaging unit is provided on a second moving mechanism different from the first moving mechanism for moving the die bonding portion.

6. The joining apparatus according to claim 1, wherein a plurality of die transport sections are provided.

7. The joining device according to claim 1, wherein a plurality of die joining portions are provided.

8. The bonding apparatus according to claim 1, comprising a base on which the substrate holding portion and the die bonding portion are provided, and a vibration damping mechanism for damping vibrations of the base.

9. The bonding apparatus according to claim 1, comprising: a first frame on which the die carrier holding portion is provided; and a second frame on which the substrate holding portion and the die bonding portion are provided, wherein a plurality of the second frames are provided relative to the first frame.

10. A processing system for mounting a plurality of dies held in a die carrier onto a substrate, comprising: a modification device for modifying at least one of the surfaces of the dies held in the die carrier and the surface of the substrate; a hydrophilization device for making at least one of the surfaces of the dies held in the die carrier and the surface of the substrate hydrophilic; and a bonding device for bonding the dies held in the die carrier to the substrate, wherein the bonding device comprises: a die carrier holding unit for holding the die carrier from below with the bonding surfaces of the plurality of dies facing upward; a substrate holding unit for holding the substrate from above with the bonding surface of the substrate facing downward; a die transport unit for receiving the dies from the die carrier and transporting the dies with the bonding surfaces of the dies facing upward; and a die bonding unit for receiving the dies from the die transport unit and bonding the dies to the substrate with the bonding surfaces of the dies facing upward.

11. A bonding method for bonding a plurality of dies held in a die carrier to a substrate, comprising: holding the die carrier from below with a die carrier holding unit with the bonding surfaces of the plurality of dies facing upward; holding the substrate from above with a substrate holding unit with the bonding surface of the substrate facing downward; receiving the dies from the die carrier with a die transport unit and transporting the dies with the bonding surfaces of the dies facing upward; and receiving the dies from the die transport unit with a die bonding unit and bonding the dies to the substrate with the bonding surfaces of the dies facing upward.

12. The bonding method according to claim 11, comprising: imaging the die held in the die bonding portion with a first imaging unit provided above the die bonding portion; imaging the substrate held in the substrate holding portion with a second imaging unit provided below the substrate holding portion; and adjusting the relative positions of the die and the substrate based on the image captured by the first imaging unit and the image captured by the second imaging unit.

13. The bonding method according to claim 12, comprising: moving the die bonding portion by a moving mechanism and then imaging the die with the first imaging unit; and moving the second imaging unit by the moving mechanism and then imaging the substrate with the second imaging unit.

14. The bonding method according to claim 11, comprising: moving the die bonding portion with a moving mechanism to bond the die to the substrate; and moving the third imaging unit with the moving mechanism, and then imaging the die in the state bonded to the substrate with the third imaging unit.

15. The bonding method according to claim 11, comprising: moving the die bonding portion with a first moving mechanism to bond the die to the substrate; and moving a third imaging unit with a second moving mechanism, and then imaging the die in the state bonded to the substrate with the third imaging unit.

16. The joining method according to claim 11, wherein a plurality of die transport units are provided, and a plurality of dies are transported from the die carrier to the die joining unit by the plurality of die transport units.

17. The bonding method according to claim 11, wherein a plurality of die bonding portions are provided, and a plurality of dies are bonded to the substrate by the plurality of die bonding portions.

18. The bonding method according to claim 11, wherein the substrate holding portion and the die bonding portion are provided on a frame, and the frame is vibrated by a vibration damping mechanism when the bonding method is performed.

19. The bonding method according to claim 11, wherein the die carrier holding portion is provided on a first frame, the substrate holding portion and the die bonding portion are provided on a second frame, a plurality of second frames are provided relative to the first frame, and the die is bonded to a plurality of substrates on the plurality of second frames.

Images