Liquid epoxy resin composition for semiconductor package and semiconductor package using same

Abstract

The present invention relates to a liquid epoxy resin composition for a semiconductor package and a semiconductor package using same, the composition comprising an epoxy resin, an acid anhydride curing agent, a curing accelerator, and an inorganic filler, wherein the epoxy resin comprises a dicyclopentadiene (DCPD)-type epoxy resin and a bisphenol A-type epoxy resin.

Description

Liquid epoxy resin composition for semiconductor packages and semiconductor package using the same

[0001] The present invention relates to a liquid epoxy resin composition for semiconductor packages and a semiconductor package using the same, which provides excellent injection properties and can improve reliability by improving warpage, heat dissipation characteristics, and low chlorine characteristics.

[0002] Semiconductor packaging is a process designed to protect semiconductor chips from the external environment, maintain electrical connectivity, and prevent mechanical damage. The materials used in this process have a direct impact on the performance, reliability, and lifespan of semiconductor devices.

[0003] In particular, epoxy resins are widely used in semiconductor packaging and other applications due to their excellent adhesion, electrical insulation, heat resistance, and chemical stability.

[0004] However, conventional solid epoxy resins have problems with fluidity during the injection process and difficulty in uniform filling, so the development of liquid epoxy resins with excellent fluidity is required to solve these issues.

[0005] Meanwhile, in the development of liquid epoxy resin, it is necessary to minimize warpage occurring in semiconductor packages, secure efficient heat dissipation characteristics, and improve the electrical characteristics of semiconductor devices by lowering the chlorine content in the epoxy resin to prevent metal corrosion.

[0006] Therefore, it is necessary to develop a liquid epoxy resin composition having improved performance (e.g., warpage characteristics, heat dissipation characteristics, low chlorine characteristics, etc.) and a semiconductor package with improved reliability using the same.

[0007] [Prior Art Literature]

[0008] [Patent Literature]

[0009] (Patent Document 1) Republic of Korea Published Patent Application No. 10-2006-0068252

[0010] The present invention aims to provide a liquid epoxy resin composition that improves warpage characteristics by mixing dicyclopentadiene (DCPD) type, bisphenol A type epoxy resin and alicyclic epoxy resin, enhances heat dissipation characteristics through dispersion technology of inorganic fillers, and implements low chlorine characteristics of the epoxy composition.

[0011] In addition, we intend to provide a semiconductor package device with improved reliability by using a liquid epoxy resin composition having improved characteristics (e.g., warpage characteristics, heat dissipation characteristics, low chlorine characteristics, etc.).

[0012] However, the problems that this invention seeks to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below.

[0013] One aspect of the present invention provides a liquid epoxy resin composition for semiconductor packages comprising an epoxy resin, an acid anhydride curing agent, a curing accelerator, and an inorganic filler, wherein the epoxy resin comprises a dicyclopentadiene (DCPD) type and a bisphenol A type epoxy resin.

[0014] Another aspect of the present invention comprises a semiconductor device sealed using the above-described liquid epoxy resin composition for semiconductor packaging,

[0015] Provides semiconductor packages.

[0016] The liquid epoxy resin composition for a semiconductor package according to the present invention and the semiconductor package using the same can minimize warpage occurring in the semiconductor package, secure efficient heat dissipation characteristics, and prevent metal corrosion by lowering the chlorine content in the epoxy resin, thereby improving the electrical characteristics of the semiconductor device.

[0017] The operation and effects of the invention will be described in more detail below through specific embodiments. However, these embodiments are merely examples of the invention and do not define the scope of the invention.

[0018] Prior to this, terms and words used in this specification and claims should not be interpreted as being limited to their ordinary or dictionary meanings, but should be interpreted in a meaning and concept consistent with the technical spirit of the invention, based on the principle that the inventor can appropriately define the concept of the terms to best describe his invention.

[0019] Therefore, it should be understood that the configuration of the embodiments described in this specification is merely one of the most preferred embodiments of the present invention and does not represent all of the technical ideas of the present invention, and that various equivalents and modifications that can replace them may exist at the time of filing this application.

[0020] In this specification, singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as “comprising,” “comprising,” or “having” are intended to specify the existence of the implemented features, numbers, steps, components, or combinations thereof, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, components, or combinations thereof.

[0021] In the present specification, "a to b" and "a~b" indicating numerical ranges, "to" and "~" are defined as ≥ a and ≤ b.

[0022]

[0023] A liquid epoxy resin composition for a semiconductor package according to one aspect of the present invention comprises an epoxy resin, an acid anhydride curing agent, a curing accelerator, and an inorganic filler, and

[0024] The above epoxy resin may include dicyclopentadiene (DCPD) type and bisphenol A type epoxy resins.

[0025] In one embodiment, the epoxy resin may include a dicyclopentadiene (DCPD) type, a bisphenol A type epoxy resin, and a cycloaliphatic epoxy resin.

[0026] The dicyclopentadiene (DCPD) type epoxy resin has a wetting characteristic that spreads well on the surface, which improves adhesion to the substrate and enables uniform distribution. In addition, the dicyclopentadiene (DCPD) type epoxy resin has a low shrinkage rate after curing, which allows for effective control of stress caused by shrinkage and effectively improves the warpage characteristics of the semiconductor package.

[0027] For example, the dicyclopentadiene (DCPD) type epoxy resin may be a dicyclopentadiene-based epoxy resin containing (meth)acrylate functional groups, a novolac type dicyclopentadiene epoxy resin (Novolac DCPD Epoxy Resin), a dicyclopentadiene-based epoxidized novolac resin, bisphenol A dicyclopentadiene diglycidyl ether, dicyclopentadiene glycidyl ether, or a combination thereof.

[0028] In one embodiment, the dicyclopentadiene (DCPD) type epoxy resin may include a dicyclopentadiene-based epoxy resin containing (meth)acrylate functional groups.

[0029] For example, the dicyclopentadiene (DCPD) type epoxy resin may be an epoxy resin containing dicyclopentadiene acrylate.

[0030] The above dicyclopentadiene acrylate can be easily polymerized by a general radical polymerization catalyst, and its molecular weight and Tg (glass transition temperature) are also significantly superior to those of existing polymers. For example, in the case of poly-dicyclopentadiene, Tg = 110~140℃, and in the case of PMMA (polymethyl methacrylate), Tg = 110℃.

[0031] The above bisphenol A type epoxy resin can provide excellent adhesion between the semiconductor chip and the package substrate and can provide high thermal stability. In addition, it has excellent electrical insulation and chemical stability, so it can produce reliable semiconductor packages.

[0032] The above-mentioned cycloaliphatic epoxy resin can improve the quality of the package by enabling uniform filling during the packaging process due to its excellent injectability in the liquid state.

[0033] In addition, the liquid epoxy resin composition for semiconductor packages has excellent fluidity during the injection process and enables uniform filling compared to conventional solid epoxy resins.

[0034] For example, the bisphenol A type epoxy resin may be a bisphenol A-propylene oxide (BPA-PO) type epoxy resin, a glycidyl ether of bisphenol A, a BPA-PO-based modified epoxy resin, a low-viscosity bisphenol A-based epoxy resin, a bisphenol A novolak type epoxy resin, or a combination thereof.

[0035] In one embodiment, the bisphenol A type epoxy resin may include a bisphenol A-propylene oxide (BPA-PO) type epoxy resin.

[0036] In one embodiment, the epoxy resin may further include a cycloaliphatic epoxy resin, a bisphenol F-type epoxy resin, a novolak-type epoxy resin, a nitrogen-containing epoxy resin, a linear aliphatic epoxy resin, a naphthalene-type epoxy resin, or a combination thereof.

[0037] The epoxy resin commonly used for sealing semiconductor devices is not particularly limited. Specifically, an epoxy compound containing two or more epoxy groups in its molecule may be used.

[0038] Examples of epoxy resins include epoxy resins obtained by epoxidizing condensates of phenol or alkylphenols with hydroxybenzaldehyde, phenol novolak-type epoxy resins, cresol novolak-type epoxy resins, polyfunctional epoxy resins, naphthol novolak-type epoxy resins, bisphenol F / bisphenol AD ​​novolak-type epoxy resins, bisphenol F / bisphenol AD ​​glycidyl ethers, bishydroxybiphenyl-type epoxy resins, alicyclic epoxy resins, nitrogen-containing epoxy resins, bromine-containing epoxy resins, etc. These epoxy resins can be used alone or in combination of two or more types.

[0039] In one embodiment, based on 100 weight% of the liquid epoxy resin composition for a semiconductor package, the content of the epoxy resin may be 5 to 30 weight%, 5 to 20 weight%, 8 to 17 weight%, preferably 5 to 15 weight%.

[0040] In one embodiment, the epoxy resin may further include a nitrogen-containing epoxy resin, alicyclic epoxy resin, bisphenol F-type epoxy resin, novolak-type epoxy resin, linear aliphatic epoxy resin, naphthalene-type epoxy resin, or a combination thereof.

[0041] For example, the nitrogen-containing epoxy resin may include an amine-type epoxy resin.

[0042] In one embodiment, the epoxy resin may further comprise a nitrogen-containing epoxy resin, and the nitrogen-containing epoxy resin may comprise triglycidyl isocyanurate.

[0043] For example, the nitrogen-containing epoxy resin may be an amine-type epoxy resin and may include triglycidyl isocyanurate (TGIC).

[0044] In one embodiment, the epoxy resin may include amine type, dicyclopentadiene (DCPD) type, and bisphenol A type epoxy resins.

[0045] When the above epoxy resin includes amine type, dicyclopentadiene (DCPD) type, and bisphenol A type epoxy resins, the weight ratio of the amine type epoxy resin, the weight of the dicyclopentadiene (DCPD) type epoxy resin, and the weight of the bisphenol A type epoxy resin (weight of amine type epoxy resin: weight of dicyclopentadiene type epoxy resin: weight of bisphenol A type epoxy resin) may be 5 to 20:1 to 5:1 to 5.

[0046] For example, the above weight ratio (weight of amine-type epoxy resin: weight of dicyclopentadiene-type epoxy resin: weight of bisphenol A-type epoxy resin) may be 7~20:1~5:1~5, 7~20:1~3:1~3, or 7~17:1~3:1~3.

[0047] For example, the weight ratio of the amine-type and dicyclopentadiene (DCPD)-type epoxy resins (weight of amine-type epoxy resin: weight of dicyclopentadiene-type epoxy resin) may be 1 to 10:1, 1 to 7.5:1, 3 to 7.5:1, or 5 to 7.5:1.

[0048] For example, the weight ratio of the amine-type and bisphenol A-type epoxy resins (weight of amine-type epoxy resin: weight of bisphenol A-type epoxy resin) may be 1 to 20:1, 1 to 17:1, 5 to 17:1, or 7.5 to 17:1.

[0049] The weight ratio of the dicyclopentadiene (DCPD) type and bisphenol A type epoxy resins (weight of dicyclopentadiene type epoxy resin: weight of bisphenol A type epoxy resin) may be 1 to 5:1 or 1 to 3:1.

[0050] If the weight ratio of the above amine-type epoxy resin exceeds the range of the present invention, the thermal conductivity may decrease, the coefficient of thermal expansion (α1) may increase, and the glass transition temperature may decrease due to an excess of polar components and an increase in residual stress, and the elastic modulus at 25°C and 260°C may decrease. Additionally, if the weight ratio of the above amine-type epoxy resin falls below the range of the present invention, the thermal conductivity may decrease, the coefficient of thermal expansion (α1) may increase, and the glass transition temperature may decrease due to insufficient crosslinking density and incomplete curing, and the elastic modulus at 25°C and 260°C may decrease.

[0051] If the weight ratio of the dicyclopentadiene (DCPD) type epoxy resin exceeds the range of the present invention, the thermal conductivity decreases due to the increase in the non-polar ratio, the coefficient of thermal expansion (α1) increases, and the elastic modulus at the glass transition temperature and at 25°C and 260°C may decrease. In addition, if the weight ratio of the dicyclopentadiene (DCPD) type epoxy resin falls below the range of the present invention, the thermal stress relief effect may be insufficient, making it difficult to control the coefficient of thermal expansion (α1), limiting the effect of improving thermal conductivity, and the elastic modulus at 25°C and 260°C may decrease.

[0052] If the weight ratio of the bisphenol A type epoxy resin exceeds the range of the present invention, the thermal conductivity may decrease and the coefficient of thermal expansion (α1) may increase due to the excessive introduction of flexible chains, and the glass transition temperature and the elastic modulus at 25°C and 260°C may decrease. Additionally, if the weight ratio of the bisphenol A type epoxy resin falls below the range of the present invention, the thermal conductivity may decrease and the coefficient of thermal expansion (α1) may increase due to increased viscosity and reduced dispersibility, and the elastic modulus at 25°C and 260°C may decrease, and the glass transition temperature may decrease due to deterioration of processability.

[0053] That is, if the weight ratio of each of the above components falls outside the scope of the present invention, the compositional balance is disrupted, making it difficult to secure the desired thermal conductivity, reduce the coefficient of thermal expansion (α1), maintain the glass transition temperature, and secure the upper and upper temperature elastic modulus.

[0054] In one embodiment, the weight ratio of the epoxy resin to the acid anhydride curing agent (weight of epoxy resin: weight of acid anhydride curing agent) may be 1:0.5 to 1:1.5.

[0055] For example, the weight ratio of the epoxy resin to the acid anhydride curing agent (weight of epoxy resin: weight of acid anhydride curing agent) may be 1:0.5 to 1:1.5, 1:0.5 to 1:1, 1:0.6 to 1:0.9, 1:0.6 to 1:1.4, 1:0.7 to 1:1.3, 1:0.8 to 1:1.2, or 1:0.9 to 1:1.1, or 1:1.

[0056] If the above weight ratio (weight of epoxy resin: weight of acid anhydride curing agent) exceeds the range of the present invention, an excess amount of acid anhydride curing agent remains unreacted and causes side reactions, which may result in a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), a decrease in the glass transition temperature, and a decrease in the elastic modulus at 25°C and 260°C. If it falls below the range of the present invention, the curing agent is insufficient, so the crosslinking network is not sufficiently formed, which may result in a decrease in the glass transition temperature, a decrease in the elastic modulus at 25°C and 260°C, an increase in the coefficient of thermal expansion (α1), and a decrease in thermal conductivity.

[0057] In one embodiment, the inorganic filler may be silica, zinc oxide, alumina, calcium carbonate, barium carbonate, barium sulfate, zinc sulfate, zinc sulfide, magnesium oxide, antimony oxide, boron nitride nanotube (BNNT), or a combination thereof.

[0058] In one embodiment, the inorganic filler may be alumina, silica, boron nitride nanotubes (BNNT), or a combination thereof.

[0059] For example, the inorganic filler may be silica, alumina, zinc oxide, magnesium oxide, antimony oxide, boron nitride nanotubes (BNNT), or a combination thereof.

[0060] In addition, for example, the above-mentioned inorganic filler may be boron nitride nanotubes (BNNT).

[0061] For example, the above inorganic filler may be composed of alumina and boron nitride nanotubes, or may be composed of alumina, silica, and boron nitride nanotubes.

[0062] In one embodiment, when the inorganic filler comprises alumina and silica, the weight ratio of the alumina and the silica (weight of alumina: weight of silica) may be 5 to 10:1, 5 to 8:1, or 5 to 6:1.

[0063] If the weight ratio of the alumina and the silica (weight of alumina: weight of silica) exceeds the range of the present invention, excessive use of alumina may cause the viscosity to increase excessively, aggregation between inorganic fillers may occur, thermal conductivity may decrease, the coefficient of thermal expansion (α1) may increase, and the elastic modulus at the glass transition temperature and at 25°C and 260°C may decrease. In addition, if the weight ratio falls below the range of the present invention, the proportion of silica becomes excessively high, and the fraction of low-conductivity fillers increases, which may cause problems such as a significant decrease in thermal conductivity and a decrease in elastic modulus.

[0064] Examples of the above-mentioned inorganic fillers include fused silica ground by a ball mill, spherical silica obtained by flame melting, spherical silica produced by the sol-gel method, silica with crystal lattice strength, alumina, boron nitride, aluminum nitride, silicon nitride, magnesium oxide, magnesia, magnesium silicate, etc., but are not limited thereto. The above-mentioned inorganic fillers may be used alone or in combination of two or more types.

[0065] The shape of the above-mentioned inorganic filler may include, but is not limited to, flake, dendritic, or spherical forms. Additionally, these may be used individually or in combination. Preferably, spherical fillers may be used for the purposes of achieving low viscosity and high filler content.

[0066] The content of the above-mentioned inorganic filler is not particularly limited, but considering moldability and mechanical properties, it is preferable to use 50% to 85% by weight based on 100% by weight of the above-mentioned liquid epoxy resin composition for semiconductor packages. If the content of the above-mentioned inorganic filler is less than 50% by weight based on 100% by weight of the above-mentioned liquid epoxy resin composition for semiconductor packages, there is a possibility that the mechanical strength will decrease. Conversely, if the content of the above-mentioned inorganic filler exceeds 85% by weight based on 100% by weight of the above-mentioned liquid epoxy resin composition for semiconductor packages, the viscosity may become too high, resulting in poor moldability, and there is a possibility that problems such as wire sweep and pad movement may occur during the molding process.

[0067] If the particle size of the above-mentioned inorganic filler is excessively large, it may reduce the packing and dispersibility of the fine pitch, thereby reducing uniformity. The maximum particle size may preferably be 5.0 μm or less. More preferably, it may be 3.0 μm or less.

[0068] In addition, the average particle size of the inorganic filler may preferably be 1 nm to 5.0 μm in terms of viscosity and fluidity characteristics. More preferably, it may be 1 nm to 3.0 μm.

[0069] In one embodiment, the alumina may be spherical alumina, and the particle size (D 50 ) can be 300 nm or less.

[0070] For example, the particle size (D) of the alumina above 50) may be 280 nm or less, 260 nm or less, 240 nm or less, 220 nm or less, 200 nm or less, 180 nm or less, 150 nm or less, and may be 1 nm or more, 10 nm or more, 50 nm or more, or 100 nm or more.

[0071] In one embodiment, the silica may be spherical silica, and the particle size (D 50 ) can be 300 nm or less.

[0072] In one embodiment, the particle size (D of the silica) 50 ) may be 280 nm or less, 260 nm or less, 240 nm or less, 220 nm or less, 200 nm or less, 180 nm or less, 150 nm or less, and may be 1 nm or more, 10 nm or more, 50 nm or more, or 100 nm or more.

[0073] Based on 100% by weight of the total weight of the above-mentioned inorganic filler, the above-mentioned alumina may be included in an amount of 78-95% by weight, 80-90% by weight, preferably 80-85% by weight.

[0074] In addition, based on 100% by weight of the total weight of the inorganic filler, the silica may be included in an amount of 0 to 20% by weight, 2 to 20% by weight, 10 to 20% by weight, preferably 10 to 15% by weight.

[0075] Based on 100% by weight of the total weight of the above inorganic filler, the boron nitride nanotubes may be included in an amount of 0.01~5% by weight, 0.01~3% by weight, 0.01~1% by weight, 0.01~0.7% by weight, 0.1~0.7% by weight, 0.1~0.65% by weight, 0.6~1% by weight, or 0.3~0.7% by weight.

[0076] If the content of the alumina, silica, and boron nitride nanotubes exceeds the range of the present invention, excessive increase in viscosity and aggregation may occur, resulting in a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), and a decrease in elastic modulus at the glass transition temperature and at 25°C and 260°C. Additionally, if the content of the alumina, silica, and boron nitride nanotubes falls below the range of the present invention, the reinforcing effect and the formation of heat transfer pathways are insufficient, resulting in a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), and difficulty in securing the desired elastic modulus at the glass transition temperature and at 25°C and 260°C. In this case, when the alumina and silica are included within the range of the present invention, it is possible to obtain a liquid epoxy resin composition for semiconductor packages that has excellent fluidity and thermal conductivity characteristics during molding.

[0077] In particular, the boron nitride nanotubes can improve thermal conductivity by effectively transferring and dispersing heat when added to the liquid epoxy resin composition for the semiconductor package, and can enhance resistance to mechanical damage by possessing high strength and toughness due to their nanometer-sized tube structure. In addition, the boron nitride nanotubes can lower the coefficient of thermal expansion (CTE) of the liquid epoxy resin composition for the semiconductor package, thereby reducing bending deformation of the package due to temperature changes and improving dimensional stability.

[0078] The above boron nitride nanotubes (BNNTs) can exist in various forms and structures.

[0079] For example, depending on the diameter and length, the boron nitride nanotubes may be fine BNNTs with a diameter at the nanometer level and a length of several micrometers to tens of micrometers. Additionally, they may be large BNNTs with a diameter larger than that of fine BNNTs and a length of several hundred micrometers.

[0080] Depending on the structure, the boron nitride nanotube may be a general BNNT, a multilayer BNNT, a single layer BNNT, or a combination thereof.

[0081] Depending on the shape, the boron nitride nanotube may be a straight BNNT, a bent BNNT, or a combination thereof.

[0082] In addition, the boron nitride nanotubes can be surface-treated and functionalized. Functionalized BNNTs can have various functions added through chemical or physical treatment of the surface, and can control reactivity with substances or facilitate bonding with other substances by introducing specific chemical groups.

[0083] These various forms of the boron nitride nanotubes mentioned above may be selected according to their application and required properties, but are not limited thereto.

[0084] In one embodiment, the particle size (D of the boron nitride nanotube) 50 ) can be 1 nm or more and 100 nm or less.

[0085] For example, the particle size (D of the boron nitride nanotube) 50) is 2nm or more and 90nm or less, 2nm or more and 70nm or less, 3nm or more and 100nm or less, 3nm or more and 90nm or less, 3nm or more and 70nm or less, 3nm or more and 50nm or less, 5nm or more and 100nm or less, 5nm or more and 90nm or less, 5nm or more and 70nm or less, 5nm or more and 50nm or less, 10nm or more and 100nm or less, 10nm or more and 90nm or less, 10nm or more and 80nm or less, 10nm or more and 70nm or less, 10nm or more and 60nm or less, 10nm or more and 50nm or less, 10nm or more and 40nm or less, 10nm or more and 30nm or less, 10nm or more and 20nm or less, 20nm or more and 100nm or less, 30nm or more and 100nm or less, 40nm or more and 100nm or less, 50nm or more It may be 100nm or less, 60nm or more and 100nm or less, 70nm or more and 100nm or less, 80nm or more and 100nm or less, or 90nm or more and 100nm or less.

[0086] The particle size (D of the above boron nitride nanotube) 50 If the diameter exceeds 100 nm, it may be difficult to achieve uniform dispersion within the liquid epoxy resin composition for semiconductor packages, and thermal conductivity or electrical insulation properties may be degraded. Additionally, if the average particle size of the boron nitride nanotubes is less than 1 nm, it may be difficult to achieve dispersion within the liquid epoxy resin composition for semiconductor packages, and tensile strength may not be sufficient.

[0087] The particle size (D of the above boron nitride nanotube) 50 ) refers to a value measured in an aqueous or organic solvent using Malvern’s Zetasizer nano-ZS instrument.

[0088] In one embodiment, the acid anhydride curing agent may be phthalic anhydride, maleic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl anhydride, anhydride, glutaric anhydride, dimethylglutaric anhydride, diethylglutaric anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, or a combination thereof.

[0089] The above acid anhydride curing agent is not particularly limited as long as it reacts with the epoxy resin, but it is preferable to use one with low coloration for the sake of transparency.

[0090] Examples of the above acid anhydride curing agents include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, succinic anhydride, dodecenyl succinic anhydride, etc. One of these acid anhydrides may be used alone, or two or more may be used in a mixture. Among these, it is preferable to use one or more selected from acid anhydrides such as hexahydrophthalic anhydride and tetrahydrophthalic anhydride for reasons of transparency, heat resistance, etc.

[0091] Regarding the content of the acid anhydride curing agent, it is preferable to adjust the ratio of functional groups (phenolic hydroxyl groups or acid anhydride groups) in the acid anhydride curing agent component to 1 equivalent of the epoxy resin so that it is preferably 0.5 to 1.5 equivalents, and more preferably 0.7 to 1.2 equivalents. By making the ratio of functional groups 0.5 equivalents or more, the curing speed of the liquid epoxy resin composition for semiconductor packages becomes at an appropriate level, while simultaneously preventing the glass transition temperature of the resulting cured product from decreasing. On the other hand, by making it 1.5 equivalents or less, moisture resistance is prevented from decreasing.

[0092] In one embodiment, the curing accelerator may be a tertiary amine, an imidazole compound, a quaternary phosphonium salt, an organometallic salt, a phosphorus compound, or a combination thereof.

[0093] The above-mentioned curing accelerator is a substance that promotes the reaction between the epoxy resin and the curing agent. For example, tertiary amines, organometallic compounds, organophosphorus compounds, imidazoles, boron compounds, polyaminoamides, acid anhydrides, basic active hydrogen compounds, etc., may be used, but are not limited thereto.

[0094] The above tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri(dimethylaminomethyl)phenol, 2-2-(dimethylaminomethyl)phenol, 2,4,6-tris(diaminomethyl)phenol, and tri-2-ethylhexylates. The above organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, etc.

[0095] The above organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine-1,4-benzoquinone adduct, etc. The above imidazoles include 2-phenyl-4-methylimidazole, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, 2-heptadecylimidazole, etc.

[0096] The above boron compounds include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroboran-n-hexylamine, trifluoroboran monoethylamine, tetrafluoroboran triethylamine, tetrafluoroboranamine, etc.

[0097] In addition, 1,5-diazabicyclo[4.3.0]non-5-ene (DBN), 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU) and phenolnovolak resins can be used.

[0098] For example, the above-mentioned curing accelerator may be an organophosphorus compound, a boron compound, an amine-based, or an imidazole-based curing accelerator used alone or in combination. In addition, the above-mentioned curing accelerator may be an adduct made by pre-reacting with an epoxy resin or a curing agent.

[0099] The content of the above curing accelerator may be 0.01 to 2 weight% with respect to 100 weight% of the above liquid epoxy resin composition for semiconductor packages, 0.02 to 1 weight%, 0.5 to 2 weight%, or 0.5 to 1 weight%. Within the above range, the curing of the above liquid epoxy resin composition for semiconductor packages is accelerated, and there is also the advantage of good curing degree.

[0100] The weight ratio of the curing agent and the curing accelerator (weight of curing agent: weight of curing accelerator) may be 14 to 30:1, 14 to 25:1, 14 to 20:1, or 14 to 16:1.

[0101] If the above weight ratio (weight of curing agent: weight of curing accelerator) exceeds the range of the present invention, a delay or incomplete curing may occur due to a lack of the curing accelerator, and a decrease in high-temperature strength, such as a decrease in elastic modulus at 260°C, may occur. In addition, if the above weight ratio falls below the range of the present invention, a significant shortening of the gelation time and microdefects may occur due to an excess of the curing accelerator, and a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), a decrease in the glass transition temperature, and a decrease in elastic modulus at 25°C and 260°C may occur.

[0102] In one embodiment, the liquid epoxy resin composition for a semiconductor package may further include an additive, and the additive may be a coupling agent, an antifoaming agent, a wetting dispersant, or a combination thereof.

[0103] In one embodiment, the liquid epoxy resin composition for a semiconductor package may further include a coupling agent. The coupling agent may be a silane coupling agent. The silane coupling agent that can be used is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler to improve the interfacial strength between the epoxy resin and the inorganic filler.

[0104] For example, it may be an epoxysilane, aminosilane, ureidosilane, mercaptosilane, etc. The coupling agent may be used alone or in combination. The coupling agent may be 0.01 to 5 weight%, 0.01 to 3 weight%, 0.01 to 2 weight%, or 0.1 to 2 weight% based on the total weight% of the liquid epoxy resin composition for semiconductor packages. Within the above range, the strength of the cured product of the liquid epoxy resin composition for semiconductor packages is excellent.

[0105] In addition, the above liquid epoxy resin composition for semiconductor packages may additionally contain, as necessary, higher fatty acids; metal salts of higher fatty acids; release agents such as ester-based waxes and carnauba waxes; stress relievers such as modified silicone oil, silicone powder, and silicone resin; and anti-oxidation agents such as Tetrakis[methylene-3-(3,5-di-tertbutyl-4-hydroxyphenyl)propionate] methane, to a extent that does not impair the purpose of the present invention. A general method for manufacturing the above liquid epoxy resin composition for semiconductor packages using raw materials as described above involves uniformly and sufficiently mixing a predetermined amount using a Hensel mixer or a Lodige mixer, then melt-kneading with a roll mill or a kneader, followed by cooling and grinding processes to obtain a final powder product.

[0106]

[0107] In one embodiment, based on 100 weight% of the liquid epoxy resin composition for a semiconductor package, the content of the epoxy resin is 5 to 20 weight%, the content of the acid anhydride curing agent is 5 to 25 weight%, the content of the curing accelerator is 0.01 to 2 weight%, the content of the inorganic filler is 50 to 85 weight%, and the content of the additive may be 0.01 to 3 weight%.

[0108] For example, based on 100 weight% of the liquid epoxy resin composition for the semiconductor package, the content of the epoxy resin is 5 to 20 weight%, the content of the acid anhydride curing agent is 5 to 20 weight%, the content of the curing accelerator is 0.3 to 2 weight%, and the content of the inorganic filler is 60 to 85 weight%, and the content of the additive may be 0.01 to 1.8 weight%.

[0109] In addition, for example, based on 100 weight% of the liquid epoxy resin composition for the semiconductor package, the content of the epoxy resin is 8 to 17 weight%, the content of the acid anhydride curing agent is 6 to 17 weight%, the content of the curing accelerator is 0.4 to 0.8 weight%, and the content of the inorganic filler is 65 to 81 weight%, and the content of the additive may be 1 to 1.8 weight%.

[0110] If the content of the epoxy resin exceeds the range of the present invention, a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), and a decrease in elastic modulus at 25°C and 260°C may occur due to dilution of the heat transfer path and an increase in residual stress caused by an increase in the resin fraction, and if it falls below the range of the present invention, a decrease in glass transition temperature (Tg), a decrease in thermal conductivity, and a decrease in elastic modulus at 25°C and 260°C may occur due to insufficient curing network density and interfacial bonding.

[0111] If the content of the acid anhydride curing agent exceeds the range of the present invention, a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), a decrease in the glass transition temperature, and a decrease in the elastic modulus at 25°C and 260°C may occur due to residual anhydride and side reactions, and if it falls below the range of the present invention, a decrease in the glass transition temperature and a decrease in the elastic modulus at 25°C and 260°C may occur due to low crosslinking.

[0112] If the content of the above-mentioned curing accelerator exceeds the range of the present invention, the gelation time is significantly shortened due to over-promotion, resulting in microdefects, which may cause a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), a decrease in the glass transition temperature, and a decrease in the elastic modulus at 25°C and 260°C. If the content falls below the range of the present invention, incomplete curing may result in a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), a decrease in the glass transition temperature, and a decrease in the elastic modulus at 25°C and 260°C.

[0113] If the content of the above-mentioned inorganic filler exceeds the range of the present invention, the effective heat transfer path is inhibited due to an excessive increase in viscosity, particle aggregation, and interfacial defects, and as a result, the thermal conductivity is reduced, the coefficient of thermal expansion (α1) is increased, the elastic modulus at 25°C and 260°C is reduced, and the glass transition temperature may be reduced. If it falls below the range of the present invention, the reinforcing effect and the formation of the heat transfer path are insufficient, so the thermal conductivity is reduced, the coefficient of thermal expansion (α1) is increased, and the elastic modulus at 25°C and 260°C may be reduced.

[0114] If the content of the above additive exceeds the range of the present invention, a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), a decrease in the glass transition temperature, and a decrease in the elastic modulus at 25°C and 260°C may occur due to excessive interfacialization, and if it falls below the range of the present invention, a decrease in thermal conductivity, an increase in the coefficient of thermal expansion (α1), a decrease in the glass transition temperature, and a decrease in the elastic modulus at 25°C and 260°C may occur due to insufficient interfacial bonding strength, poor dispersion, and insufficient degassing.

[0115] In one embodiment, the thermal conductivity of the liquid epoxy resin composition for semiconductor packaging may be 1 W / mK or higher.

[0116] For example, the thermal conductivity may be 1.1 W / mK or higher or 1.2 W / mK or higher, and may be 50 W / mK or lower, 40 W / mK or lower, 30 W / m or lower, 20 W / m or lower, 10 W / m or lower, or 5 W / m or lower.

[0117] For example, the liquid epoxy resin composition for semiconductor packaging may include silica, alumina, zinc oxide, magnesium oxide, antimony oxide, or a combination thereof as an inorganic filler, and when the inorganic filler is included, the thermal conductivity of the liquid epoxy resin composition for semiconductor packaging may be 1.0 W / mK or higher.

[0118] For example, the liquid epoxy resin composition for semiconductor packaging may include silica, alumina, boron nitride nanotubes, or a combination thereof as an inorganic filler, and when the inorganic filler is included, the thermal conductivity of the liquid epoxy resin composition for semiconductor packaging may be 1.0 W / mK or higher.

[0119] In one embodiment, the coefficient of thermal expansion (α1) of the liquid epoxy resin composition for semiconductor packaging may be 40 ppm / ℃ or less, and the glass transition temperature (Tg) may be 110℃ or more and 150℃ or less.

[0120] For example, the coefficient of thermal expansion (α1) may be 38 ppm / ℃ or less, 36 ppm / ℃ or less, or 34 ppm / ℃ or less, and may be 10 ppm / ℃ or more, 15 ppm / ℃ or more, 20 ppm / ℃ or more, or 25 ppm / ℃ or more.

[0121] For example, the glass transition temperature (Tg) may be 110°C or higher and 140°C, 110°C or higher and 130°C, or 115°C or higher and 125°C.

[0122] In one embodiment, the elastic modulus of the liquid epoxy resin composition for semiconductor packaging at 25°C may be 10.3 GPa or more, and the elastic modulus at 260°C may be 1.0 GPa or more.

[0123] For example, the elastic modulus at 25°C may be 10.5 GPa or more or 12 GPa or more, and may be 20 GPa or less, 15 GPa or less, or 12 GPa or less.

[0124] For example, the elastic modulus at 260°C may be 1.1 GPa or more, 1.3 GPa or more, or 1.5 GPa or more, and may be 2.5 GPa or less, 2 GPa or less, or 1.8 GPa or less.

[0125] In one embodiment, the viscosity of the liquid epoxy resin composition for a semiconductor package may be 80,000 to 420,000.

[0126] For example, the viscosity may be 85,000 to 420,000 cps, 90,000 to 410,000 cps, or 100,000 to 400,000 cps.

[0127]

[0128] A semiconductor package, which is another aspect of the present invention, may include a semiconductor device sealed using the liquid epoxy resin composition for semiconductor packaging.

[0129] A low-pressure transfer molding method can generally be used as a method for sealing a semiconductor device using the above-mentioned liquid epoxy resin composition for a semiconductor package.

[0130] By the above method, the liquid epoxy resin composition for the semiconductor package can be attached to a copper-based lead frame (e.g., a silver-plated copper lead frame), a nickel-alloy-based lead frame, a lead frame that is pre-plated with a material containing nickel and palladium and then plated with one or more of silver (Ag) and gold (Au), a circuit board, etc., to manufacture the semiconductor package in which the semiconductor device is sealed.

[0131] The above-described sealed semiconductor device is sealed with the above-described liquid epoxy resin composition for semiconductor packages, and has excellent heat dissipation effect and flexural strength.

[0132]

[0133] The present invention will be explained in more detail below through examples. However, the following examples are intended to explain the invention more specifically, and the scope of the invention is not limited by the following examples.

[0134] Examples and Comparative Examples: Preparation of Liquid Epoxy Resin Composition for Semiconductor Packages

[0135] Dicyclopentadiene (DCPD) type and bisphenol A-propylene oxide (BPA-PO) type epoxy resins were used.

[0136] Inorganic fillers have particle sizes (D 50 Boron Nitride Nano Tube (BNNT) with a particle size of 50 nm, particle size (D 50 Spherical silica having a particle size of 100 nm, and particle size (D 50 Spherical alumina with a diameter of 100 nm was used.

[0137] 4-methylhexahydrophthalic anhydride and hexahydrophthalic anhydride were used as acid anhydride curing agents.

[0138] An imidazole-based compound was used as a curing accelerator.

[0139] Silane coupling agents, antifoaming agents, and surface dispersants were used as additives.

[0140] The above epoxy resin, inorganic filler, acid anhydride curing agent, curing accelerator, and additives were mixed according to the composition listed in Table 1 below, and then cured in a box oven at 170°C for 1 hour to produce a cured product.

[0141] Finally, liquid epoxy resin compositions for semiconductor packages of Examples 1 and 2 and Comparative Examples 1 to 3 were prepared.

[0142] The compositions of the epoxy resin, inorganic filler, acid anhydride curing agent, curing accelerator, and additives of Examples 1 and 2 and Comparative Examples 1 to 3 are shown in Table 1 below.

[0143]

[0144] Composition (Weight%) Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Epoxy Resin I 8.5 7.5 24.5 25.5 5.8 Epoxy Resin II 1.5 1.0 ---Epoxy Resin III 0.5 1.0 ---Epoxy Resin IV ---- 2.0 Curing Agent 7.0 8.0 --10.0 Curing Accelerator 0.5 0.5 0.5 0.5 0.2 Inorganic Filler Alumina 68.0 80.0 70.0 -68.0 Silica 12.0 --70.0 12.0 Boron Nitride Nanotube 0.5 0.5 ---Additive 1.5 1.5 5.0 4.0 2.0 Total 100.0 100.0 100.0 100.0 100.0

[0145]

[0146] In Table 1 above,

[0147] The above epoxy resin I is an amine-type epoxy resin, and is triglycidyl isocyanurate (MGC).

[0148] The above epoxy resin II is a dicyclopentadiene (DCPD) type epoxy resin, and is an epoxy resin containing dicyclopentadiene acrylate (ADEKA).

[0149] Epoxy resin III is a bisphenol A-propylene oxide type (BPA-PO) epoxy resin (ADEKA).

[0150] Epoxy resin IV is a bisphenol A type epoxy resin, KDS-8161 (Kukdo Chemical Co., Ltd.).

[0151] The above curing agent is RIKACID MH-700G (New Japan Chemical Co.), which is a combination of 4-methylhexahydrophthalic anhydride and hexahydrophthalic anhydride.

[0152] The above curing accelerator is 2E4MZ-CN (1-cyanoethyl-2-ethyl-4-methyl imidazole, Shikoku Chemicals), which is an imidazole-based curing accelerator.

[0153] The above inorganic filler is a combination of spherical alumina (Al₂O₃), spherical silica (SiO₂), and boron nitride nanotubes (BNNT).

[0154] The above additive is a combination of a silane coupling agent, an antifoaming agent, and a surface dispersant, wherein the silane coupling agent is 3-glycidoxypropyl trimethoxysilane (KBM-403, Shin-Etsu Chemical), the antifoaming agent is TEGO® Airex 991 (Evonik), and the surface dispersant is BYK-110 (BYK).

[0155]

[0156] [Evaluation Example]

[0157] Evaluation Example 1: Measurement of Thermal Expansion Coefficient

[0158] The coefficient of thermal expansion of the compositions prepared according to Examples 1 and 2 and Comparative Examples 1 to 3 was measured by thermomechanical analysis (TMA) according to ASTM E831. The coefficient of thermal expansion was measured using prepared specimens in a temperature range of 25 to 300 ℃ under a heating rate of 5 ℃ / min.

[0159] The measurement results are shown in Table 2 below.

[0160]

[0161] Evaluation Example 2: Measurement of Modulus and Glass Transition Temperature (Tg)

[0162] The modulus and glass transition temperature (Tg) of the compositions prepared according to Examples 1 and 2 and Comparative Examples 1 to 3 were measured by dynamic mechanical analysis (DMA) according to ASTM D4065. Using the prepared specimens, the modulus and glass transition temperature were measured in a temperature range of 25 to 300 ℃ under a heating rate of 5 ℃ / min.

[0163] The measurement results are shown in Table 2 below.

[0164]

[0165] Evaluation Example 3: Measurement of thermal conductivity

[0166] The thermal conductivity of the resin compositions prepared according to Examples 1 and 2 and Comparative Examples 1 to 3 was measured by the laser flash method according to ASTM E1461. The measurement temperature was 25 ℃.

[0167] The measurement results are shown in Table 2 below.

[0168]

[0169] Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Coefficient of Thermal Expansion (α1, CTE, ppm / ℃) 25.0 34.0 45.0 47.0 55.0 Elastic Modulus (Modulus, 25℃, GPa) 12.0 10.3 7.5 6.6 10.0 Elastic Modulus (Modulus, 260℃, GPa) 1.5 1.1 1.3 1.3 0.2 Glass Transition Temperature (Tg, ℃) 120 118 129 127 112 Thermal Conductivity (w / mK) 1.20 1.3 10.9 10.5 41.0 6

[0170]

[0171] As shown in Table 2 above, compared to Comparative Examples 1 to 3, it was confirmed that Example 1 has a significantly lower coefficient of thermal expansion (α1) of 25.0 ppm / ℃, a higher elastic modulus of 12.0 GPa at 25 ℃, an excellent elastic modulus of 1.5 GPa at 260 ℃, and an improved thermal conductivity of 1.20 W / m·K.

[0172] As shown in Table 2 above, compared to Comparative Examples 1 to 3, Example 2 was found to have the best thermal conductivity of 1.31 W / m·K, a low coefficient of thermal expansion (α1) of 34.0 ppm / ℃, and good elastic moduli of 10.3 GPa and 1.1 GPa at 25 ℃ and 260 ℃, respectively.

[0173] As shown in Tables 1 and 2 above, in the case of Comparative Example 1, it was confirmed that the elastic modulus at 25°C and 260°C was low at 7.5 GPa and 1.3 GPa, respectively, and the CTE increased to 45.0 ppm / °C, as epoxy resin II (epoxy resin containing dicyclopentadiene acrylate) and epoxy resin III (bisphenol A-propylene oxide type (BPA-PO) epoxy resin) were not included and the additive was included in excess.

[0174] As shown in Tables 1 and 2 above, in the case of Comparative Example 2, it was confirmed that the thermal conductivity was significantly reduced to 0.54 W / m·K and the performance was generally degraded, with an elastic modulus of 6.6 GPa and a coefficient of thermal expansion of 47.0 ppm / ℃ at 25 ℃, as epoxy resin II (epoxy resin containing dicyclopentadiene acrylate) and epoxy resin III (bisphenol A-propylene oxide type (BPA-PO) epoxy resin) were not included and an excess amount of silica, an inorganic filler, was used.

[0175] As shown in Tables 1 and 2 above, in the case of Comparative Example 3, it was confirmed that the elastic modulus at 260°C decreased sharply to 0.2 GPa as it did not contain epoxy resin II (epoxy resin containing dicyclopentadiene acrylate) and epoxy resin III (bisphenol A-propylene oxide type (BPA-PO) epoxy resin) and contained a small amount of curing accelerator, the coefficient of thermal expansion increased to 55.0 ppm / °C, and the thermal conductivity remained at 1.06 W / m·K.

[0176] Meanwhile, Examples 1 and 2 both contain boron nitride nanotubes, whereas Comparative Examples 1 to 3 do not contain boron nitride nanotubes. Through this, it was confirmed that in a composition containing boron nitride nanotubes, an improvement in the coefficient of thermal expansion, the securing of elastic modulus at room temperature (25 ℃) and high temperature (260 ℃), and an improvement in thermal conductivity were simultaneously achieved.

[0177] In addition, in the case of Comparative Example 3, it was confirmed that the inclusion of epoxy resin IV (bisphenol A type epoxy resin) combined with the inclusion of a trace amount of curing accelerator resulted in an overall tendency for high-temperature properties, such as the glass transition temperature, elastic modulus at 260°C, and coefficient of thermal expansion, to decrease.

[0178]

[0179] Accordingly, the liquid epoxy resin composition for semiconductor packages of the specific composition of the present invention exhibits excellent mechanical properties in terms of elastic modulus at room temperature (25 ℃) and high temperature (260 ℃), and can also provide excellent thermal properties in terms of thermal conductivity, coefficient of thermal expansion (α1), and glass transition temperature.

[0180] The liquid epoxy resin composition for a semiconductor package according to the present invention and the semiconductor package using the same can minimize warpage occurring in the semiconductor package, secure efficient heat dissipation characteristics, and prevent metal corrosion by lowering the chlorine content in the epoxy resin, thereby improving the electrical characteristics of the semiconductor device.

Claims

1. comprising an epoxy resin, an acid anhydride curing agent, a curing accelerator, and an inorganic filler, The above epoxy resin comprises dicyclopentadiene (DCPD) type and bisphenol A type epoxy resins, Liquid epoxy resin composition for semiconductor packaging.

2. In Paragraph 1, The above dicyclopentadiene (DCPD) type epoxy resin comprises a dicyclopentadiene-based epoxy resin containing (meth)acrylate functional groups, a novolac-type dicyclopentadiene epoxy resin (Novolac DCPD Epoxy Resin), a dicyclopentadiene-based epoxidized novolac resin, bisphenol A dicyclopentadiene diglycidyl ether, dicyclopentadiene glycidyl ether, or a combination thereof. Liquid epoxy resin composition for semiconductor packaging.

3. In Paragraph 1, The above bisphenol A type epoxy resin comprises a bisphenol A-propylene oxide (BPA-PO) type epoxy resin, a glycidyl ether of bisphenol A, a BPA-PO-based modified epoxy resin, a low-viscosity bisphenol A-based epoxy resin, a bisphenol A novolak type epoxy resin, or a combination thereof. Liquid epoxy resin composition for semiconductor packaging.

4. In Paragraph 1, The above epoxy resin further comprises a nitrogen-containing epoxy resin, alicyclic epoxy resin, bisphenol F-type epoxy resin, novolak-type epoxy resin, linear aliphatic epoxy resin, naphthalene-type epoxy resin, or a combination thereof. Liquid epoxy resin composition for semiconductor packaging.

5. In Paragraph 4, The above nitrogen-containing epoxy resin comprises triglycidyl isocyanurate, Liquid epoxy resin composition for semiconductor packaging.

6. In Paragraph 1, A weight ratio of the epoxy resin to the acid anhydride curing agent (weight of epoxy resin: weight of acid anhydride curing agent) of 1:0.5 to 1:1.5, Liquid epoxy resin composition for semiconductor packaging.

7. In Paragraph 1, The above-mentioned inorganic filler is silica, zinc oxide, alumina, calcium carbonate, barium carbonate, barium sulfate, zinc sulfate, zinc sulfide, magnesium oxide, antimony oxide, boron nitride nanotubes (BNNT), or a combination thereof. Liquid epoxy resin composition for semiconductor packaging.

8. In Paragraph 7, Particle size (D) of the above boron nitride nanotube (BNNT) 50 ) being 1nm or more and 100nm or less, Liquid epoxy resin composition for semiconductor packaging.

9. In Paragraph 1, The above acid anhydride curing agent is phthalic anhydride, maleic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl anhydride, sodium anhydride, glutaric anhydride, dimethylglutaric anhydride, diethylglutaric anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, or a combination thereof. Liquid epoxy resin composition for semiconductor packaging.

10. In Paragraph 1, The above-mentioned curing accelerator is a tertiary amine, an imidazole compound, a quaternary phosphonium salt, an organometallic salt, a phosphorus compound, or a combination thereof. Liquid epoxy resin composition for semiconductor packaging.

11. In Paragraph 1, Including additional additives, The above additive is a coupling agent, an antifoaming agent, a wetting dispersant, or a combination thereof, Liquid epoxy resin composition for semiconductor packaging.

12. In Paragraph 11, Based on 100 weight% of the above liquid epoxy resin composition for semiconductor packages, The content of the above epoxy resin is 5 to 20 weight%, and The content of the above acid anhydride curing agent is 5 to 25 weight%, and The content of the above-mentioned curing accelerator is 0.01 to 2 weight%, and The content of the above-mentioned inorganic filler is 50 to 85 weight%, The content of the above additive is 0.01 to 3 weight%, Liquid epoxy resin composition for semiconductor packaging.

13. In Paragraph 1, The thermal conductivity is 1.0 w / mK or higher, and The coefficient of thermal expansion (α1) is 40 ppm / ℃ or less, and glass transition temperature (Tg) of 110°C or higher and 150°C or lower, Liquid epoxy resin composition for semiconductor packaging.

14. In Paragraph 1, The elastic modulus at 25℃ is 10.3 GPa or higher, and Elastic modulus at 260℃ of 1.0 GPa or higher, Liquid epoxy resin composition for semiconductor packaging.

15. A semiconductor device comprising a sealed semiconductor device using a liquid epoxy resin composition for semiconductor packaging according to any one of claims 1 to 14, Semiconductor package.