Plasma processing device

Abstract

This plasma processing device comprises a plasma processing chamber, a magnetic field generation unit that is disposed above the plasma processing chamber, at least one magnetic field sensor, and a control unit that is configured to control the magnetic field generation unit on the basis of an output of the magnetic field sensor.

Description

Plasma processing apparatus

[0001] The present disclosure relates to a plasma processing apparatus.

[0002] Patent Document 1 discloses a plasma processing apparatus that performs processing by applying plasma of a processing gas to a processing substrate. Patent Document 1 discloses that the plasma processing apparatus includes an electromagnet having one or a plurality of annular coils centered on a central axis that passes through the center of the lower electrode in the vertical direction above or above the processing container.

[0003] Japanese Patent Application Laid-Open No. 2015-201552

[0004] The present disclosure provides a technique for appropriately controlling a magnetic field in a plasma processing space.

[0005] According to one aspect of the present disclosure, there is provided a plasma processing apparatus including a plasma processing chamber, a magnetic field generation unit disposed above the plasma processing chamber, at least one magnetic field sensor, and a control unit configured to control the magnetic field generation unit based on an output of the magnetic field sensor.

[0006] The present disclosure provides a technique for appropriately controlling a magnetic field in a plasma processing space.

[0007] Figure 1 is a diagram illustrating the configuration of a plasma processing apparatus according to the first embodiment. Figure 2 is a diagram illustrating the configuration of the magnetic field generating unit in the plasma processing apparatus according to the first embodiment. Figure 3 is a diagram illustrating the configuration around the showerhead in the plasma processing apparatus according to the first embodiment. Figure 4 is a diagram illustrating the configuration around the showerhead in the plasma processing apparatus according to the second embodiment. Figure 5 is a diagram illustrating the configuration around the showerhead in the plasma processing apparatus according to the third embodiment. Figure 6 is a diagram illustrating the influence of the plasma density distribution on substrate processing in the plasma processing apparatus. Figure 7 is a diagram illustrating the influence of the plasma density distribution on substrate processing in the plasma processing apparatus. Figure 8 is a bottom view illustrating the configuration of the magnetic field generating unit in the plasma processing apparatus according to the fourth embodiment. Figure 9 is a cross-sectional view illustrating the configuration of the magnetic field generating unit in the plasma processing apparatus according to the fourth embodiment. Figure 10 is a diagram illustrating the configuration of the magnetic field generating unit and the magnetic field measuring unit in the plasma processing apparatus according to the fourth embodiment. Figure 11 is a diagram illustrating a first modified example of the arrangement of the magnetic field measuring unit in the plasma processing apparatus according to the fifth embodiment. Figure 12 is a diagram illustrating a second modified example of the arrangement of the magnetic field measuring unit in the plasma processing apparatus according to the fifth embodiment. Figure 13 is a diagram illustrating a third modified example of the arrangement of the magnetic field measuring unit in the plasma processing apparatus according to the fifth embodiment. Figure 14 illustrates a first example of the magnetic field measurement process in the plasma processing apparatus according to the sixth embodiment. Figure 15 illustrates a second example of the magnetic field measurement process in the plasma processing apparatus according to the sixth embodiment. Figure 16 illustrates a third example of the magnetic field measurement process in the plasma processing apparatus according to the sixth embodiment. Figure 17 illustrates a fourth example of the magnetic field measurement process in the plasma processing apparatus according to the sixth embodiment. Figure 18 illustrates a drive unit for moving the magnetic field measurement unit in the plasma processing apparatus according to the seventh embodiment.

[0008] Hereinafter, embodiments for carrying out this disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are denoted by the same reference numerals to avoid redundant explanations. For ease of understanding, the scale of the parts in the drawings may differ from that of the actual parts. In directions such as parallel, right angles, orthogonal, horizontal, vertical, up and down, and left and right, deviations are permitted to the extent that they do not impair the effect of the embodiment. The shape of the corners is not limited to right angles and may be rounded. Parallel, right angles, orthogonal, horizontal, and vertical may include substantially parallel, substantially right angles, substantially orthogonal, substantially horizontal, and substantially vertical.

[0009] The following describes an example of a plasma processing system configuration. Figure 1 is a diagram illustrating an example of a capacitively coupled plasma processing system configuration.

[0010] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support portion 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0011] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or it may be placed on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, which is electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed inside the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode inside the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode inside the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0013] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0014] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0015] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0016] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one processing gas.

[0017] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF (Radio Frequency) signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0018] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0019] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0020] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0021] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as voltage pulse generation units configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangle, trapezoid, triangle, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first voltage generation unit 32a and the second voltage generation unit 32b may be provided in addition to the power supply 31, and the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0022] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0023] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0024] The plasma processing apparatus 1 according to the first embodiment further includes a magnetic field generating unit 50. The magnetic field generating unit 50 is provided above the substrate support unit 11 via the plasma processing space 10s. The magnetic field generating unit 50 generates a magnetic field in the plasma processing space 10s. The magnetic field generating unit 50 is provided above the shower head 13.

[0025] The magnetic field generating unit 50 is equipped with a plurality of electromagnets 51. The magnetic field generating unit 50 is equipped with so-called multizone electromagnets. The plurality of electromagnets 51 are annular electromagnets. In other words, the magnetic field generating unit 50 is equipped with a plurality of annular electromagnets. The plurality of electromagnets 51 are arranged in a horizontal direction. Specifically, the magnetic field generating unit 50 is equipped with electromagnets 51a, 51b, 51c, 51d, and 51e in order from the inside. Each of the plurality of electromagnets 51 is equipped with a core member and a coil wound around the core member. In addition, a yoke or the like that which guides magnetic flux may be provided around each of the plurality of electromagnets 51.

[0026] Furthermore, the plasma processing apparatus 1 according to the first embodiment further includes magnetic field measuring units 60a, 60b, 60c, 60d, and 60e. The magnetic field measuring units 60a, 60b, 60c, 60d, and 60e are provided in correspondence with electromagnets 51a, 51b, 51c, 51d, and 51e, respectively.

[0027] Each of the magnetic field measuring units 60a, 60b, 60c, 60d, and 60e only needs to be capable of measuring a magnetic field. Each of the magnetic field measuring units 60a, 60b, 60c, 60d, and 60e is, for example, a Gauss meter, a Hall element, or a magnetoresistive element.

[0028] Figure 2 is a diagram illustrating the configuration of a magnetic field generating unit 50 in a plasma processing apparatus 1, which is an example of a plasma processing apparatus according to the first embodiment. Figure 2 is a plan cross-sectional view of the magnetic field generating unit 50. As shown in Figure 2, each of the multiple electromagnets 51 is formed in an annular (ring shape). Each of the multiple electromagnets 51 is arranged in concentric circles with the central axis of the plasma processing chamber 10 as the starting point. The central axis of the plasma processing chamber 10 is also the central axis of the plasma processing space 10s, the substrate support part 11, the shower head 13, etc. Each of the multiple electromagnets 51 is installed so as to be arranged at equal intervals along the horizontal direction in a side cross-sectional view.

[0029] More specifically, the multiple electromagnets 51 include electromagnets 51a, 51b, 51c, 51d, and 51e, arranged radially outward from the central axis of the plasma processing chamber 10. In the examples shown in Figures 1 and 2, electromagnets 51a, 51b, 51c, 51d, and 51e have the same cross-sectional shape (width and thickness), but the cross-sectional shapes may differ between the electromagnets 51. The cross-sectional shape of each of the multiple electromagnets 51 may be appropriately designed according to the target magnetic field distribution formed by each of the multiple electromagnets 51.

[0030] As shown in Figure 1, the outer diameter of electromagnet 51c is smaller than the diameter of the substrate W. Therefore, electromagnets 51a, 51b, and 51c are positioned so that, in a plan view, they overlap the substrate W placed on the substrate support 11. On the other hand, the outer diameter of electromagnet 51d is larger than the diameter of the substrate W, and is set to be approximately the same as, for example, the outer diameter of the ring assembly 112. Therefore, electromagnet 51d is positioned so that, in a plan view, it overlaps the ring assembly 112 placed on the substrate support 11. Electromagnet 51e, located outside electromagnet 51d, is positioned so that, in a plan view, it does not face the substrate support 11 (ring assembly 112).

[0031] Each coil from electromagnet 51a to electromagnet 51e is electrically connected to the electromagnet excitation circuit 59 via wiring. The electromagnet excitation circuit 59 supplies excitation current to each of the electromagnets from 51a to 51e based on commands from the control unit 2. The electromagnet excitation circuit 59 can adjust the amount of excitation current supplied to each of the electromagnets from 51a to 51e based on commands from the control unit 2. The electromagnet excitation circuit 59 can also supply excitation current to electromagnets 51a to 51e in any combination (or individually).

[0032] The magnetic field generating unit 50 supplies excitation current to each of the multiple electromagnets 51 from the electromagnet excitation circuit 59. By supplying excitation current to each of the multiple electromagnets 51 from the electromagnet excitation circuit 59, the magnetic field generating unit 50 forms an appropriate magnetic field in the plasma processing space 10s below it via the shower head 13.

[0033] The configuration around the showerhead 13 will be described in more detail. Figure 3 is a diagram illustrating the configuration around the showerhead 13 in a plasma processing apparatus 1, which is an example of a plasma processing apparatus according to the first embodiment.

[0034] The plasma processing apparatus 1 fixes the shower head 13 via an insulating fixing member 14. The plasma processing apparatus 1 also includes a cooling plate 15 stacked on the shower head 13. The cooling plate 15 has internal coolant flow paths and the like. The cooling plate 15 dissipates heat from the shower head 13, which becomes hotter during plasma processing.

[0035] The plasma processing apparatus 1 has a configuration in which the upper part of the plasma processing chamber 10 is covered by a top plate 16. The top plate 16 closes the upper end of the side wall 10a and is grounded via the side wall 10a. In addition, a cavity 17 that provides insulation is formed between the cooling plate 15 and the top plate 16.

[0036] The plasma processing apparatus 1 includes an electrode rod 35 at the center of the plasma processing chamber 10, which penetrates the top plate 16 and is connected to the power supply system 30 externally. The electrode rod 35 supplies power (source RF signal, second DC signal, etc.) to the shower head 13. The electrode rod 35 is insulated from the top plate 16 by an insulating member 36 attached to its outer circumferential surface.

[0037] The magnetic field generating unit 50 in the plasma processing apparatus 1 is installed on a top plate 16 that is insulated from the shower head 13, which is the upper electrode. For example, electromagnets 51a to 51e are arranged radially inside the top plate 16. The magnetic field generating unit 50 is provided with multiple electromagnets 51 and is divided into multiple zones.

[0038] Each of the electromagnets 51a through 51e works in conjunction with each other to form a magnetic field in the plasma processing space 10s. Each of the electromagnets 51a through 51e has the greatest influence on the magnetic field directly below its installation position. Specifically, electromagnet 51a influences the magnetic field of zone Z1, which is located near the central axis of the plasma processing space 10s. Electromagnet 51b influences the magnetic field of zone Z2, which is radially adjacent to zone Z1. Electromagnet 51c influences the magnetic field of zone Z3, which is radially adjacent to zone Z2. Electromagnet 51d influences the magnetic field of zone Z4, which is radially adjacent to zone Z3. Electromagnet 51e influences the magnetic field of zone Z5, which is radially adjacent to zone Z4. The magnetic fields of zones Z1 through Z5 work in conjunction with each other to form a continuous magnetic field distribution in the plasma processing space 10s from zone Z1 to zone Z5.

[0039] Furthermore, the plasma processing apparatus 1 includes a plurality of magnetic field measuring units for measuring the strength of the magnetic field generated by the magnetic field generating unit 50. Specifically, the plasma processing apparatus 1 includes magnetic field measuring units 60a, 60b, 60c, 60d, and 60e (from magnetic field measuring units 60a to 60e). The plasma processing apparatus 1 includes a magnetic field measuring unit corresponding to each of the plurality of electromagnets 51.

[0040] Specifically, the plasma processing apparatus 1 includes a magnetic field measuring unit 60a below the electromagnet 51a. The magnetic field measuring unit 60a measures the magnetic field in zone Z1. The plasma processing apparatus 1 also includes a magnetic field measuring unit 60b below the electromagnet 51b. The magnetic field measuring unit 60b measures the magnetic field in zone Z2. Similarly, the plasma processing apparatus 1 includes magnetic field measuring units 60c, 60d, and 60e below the electromagnets 51c, 51d, and 51e, respectively. The magnetic field measuring units 60c, 60d, and 60e measure the magnetic fields in zones Z3, Z4, and Z5, respectively.

[0041] From the magnetic field measurement unit 60a to the magnetic field measurement unit 60e, a plurality of electromagnets 51 (from zone Z1 to zone Z5) are arranged in a row in the radial direction or the diameter direction. By arranging the magnetic field measurement units 60a to 60e in a row in the radial direction or the diameter direction of the plurality of electromagnets 51, changes and inclinations in the radial direction of the magnetic field can be easily grasped. Further, by arranging the magnetic field measurement units 60a to 60e in a row in the radial direction or the diameter direction of the plurality of electromagnets 51, wiring and mechanical arrangements can be implemented relatively easily.

[0042] The control unit 2 is configured to control the magnetic field generation unit 50 based on the output of each of the magnetic field measurement units 60a to 60e.

[0043] In the plasma processing apparatus according to the first embodiment, since the magnetic field of each of the plurality of electromagnets can be measured in the multi-zone electromagnet, the magnetic field of each of the plurality of electromagnets can be accurately measured. And the plasma processing apparatus according to the first embodiment can control the current to each of the plurality of electromagnets based on the result of accurately measuring the magnetic field of each of the plurality of electromagnets. The plasma processing apparatus according to the first embodiment can appropriately control the magnetic field in the plasma processing space.

[0044] <Second Embodiment> The plasma processing apparatus according to the second embodiment will be described. The plasma processing apparatus according to the second embodiment includes one magnetic field measurement unit at a representative position. FIG. 4 is a diagram for explaining the configuration around the shower head 13 in a plasma processing apparatus 1A which is an example of the plasma processing apparatus according to the second embodiment.

[0045] The plasma processing apparatus 1A includes a magnetic field measurement unit 160 that measures the magnetic field generated by the magnetic field generation unit 50. The magnetic field measurement unit 160 is provided near the center of the magnetic field generation unit 50. That is, the magnetic field measurement unit 160 measures the magnetic field generated by the magnetic field generation unit 50 near the center of the magnetic field generation unit 50. [[ID=1,4]]

[0046] The magnetic field measurement unit 160 can measure the intensity of the magnetic field generated by each of the electromagnets 51a to 51e by operating each of the electromagnets 51a to 51e independently.

[0047] In the plasma processing apparatus according to the second embodiment, in the multi-zone electromagnet, since the magnetic field of the magnetic field generation unit can be measured at the representative position, the magnetic field can be measured with a simple configuration. And the plasma processing apparatus according to the second embodiment can control the current to each of the plurality of electromagnets based on the result of measuring the magnetic field.

[0048] <Third Embodiment> The plasma processing apparatus according to the third embodiment will be described. The plasma processing apparatus according to the third embodiment is configured such that the magnetic field measurement unit is movable. FIG. 5 is a diagram for explaining the configuration around the shower head 13 in a plasma processing apparatus 1B which is an example of the plasma processing apparatus according to the third embodiment.

[0049] The plasma processing apparatus 1B includes a magnetic field measurement unit 260 that measures the magnetic field generated by the magnetic field generation unit 50. The magnetic field measurement unit 260 is configured to be movable from the center to the end of the magnetic field generation unit 50. The magnetic field measurement unit 260 moves downward along the direction of arrow D in FIG. 5 below the magnetic field generation unit 50. By configuring the magnetic field measurement unit 260 to be movable from the center to the end of the magnetic field generation unit 50, the magnetic field measurement unit 260 is moved to the zone to be measured, and the magnetic field generated by the magnetic field generation unit 50 in the zone to be measured is measured.

[0050] In the plasma processing apparatus according to the third embodiment, in the multi-zone electromagnet, the magnetic field at the position to be measured can be measured by moving the magnetic field measurement unit. And the plasma processing apparatus according to the third embodiment can control the current to each of the plurality of electromagnets based on the result of measuring the magnetic field.

[0051] <Operation of the Plasma Processing Apparatus According to the Present Embodiment> The operation of the plasma processing apparatus according to the present embodiment will be described. The plasma processing apparatus according to the present embodiment measures and adjusts the magnetic field by the magnetic field measurement unit with the magnetic field generation unit, for example, at the time of product shipment, maintenance, during process processing (substrate processing), or during standby in process processing (substrate processing).

[0052] (1) During the shipping inspection, for example, as part of the shipping inspection when shipping a product, the magnetic field is generated by the magnetic field generator and measured by the magnetic field measuring unit. For example, if the magnetic field measurement result by the magnetic field measuring unit falls outside the range of the desired specifications, the current supplied to the electromagnet is adjusted and the inspection is performed again. For example, if the magnetic field measurement result by the magnetic field measuring unit is within the range of the desired specifications, the product is shipped.

[0053] According to the plasma processing apparatus of this embodiment, the measurement accuracy can be improved, thereby reducing the differences in equipment specifications. Furthermore, because the plasma processing apparatus of this embodiment is equipped with a magnetic field measurement unit, productivity can be improved by shortening the inspection time.

[0054] (2) During maintenance For example, as an inspection when maintaining the product, the magnetic field is generated by the magnetic field generator and measured by the magnetic field measuring unit. For example, if the magnetic field measurement result by the magnetic field measuring unit falls outside the range of the desired specifications, the current supplied to the electromagnet is adjusted and the inspection is performed again. For example, if the magnetic field measurement result by the magnetic field measuring unit is within the range of the desired specifications, the adjustment of the magnetic field generator is completed.

[0055] According to the plasma processing apparatus of this embodiment, end users can perform periodic inspections at the location where the plasma processing apparatus is installed. Furthermore, since the plasma processing apparatus of this embodiment does not rely on manual work by an operator, the reliability of the operation can be improved.

[0056] (3) During process processing (substrate processing) For example, while process processing (substrate processing) is being performed, a magnetic field is generated by the magnetic field generation unit and the magnetic field measurement unit measures the magnetic field. For example, if the magnetic field measurement result by the magnetic field measurement unit falls outside the range of the desired specifications, the current supplied to the electromagnet is adjusted and the inspection is performed again. For example, if the magnetic field measurement result by the magnetic field measurement unit is within the range of the desired specifications, the process processing (substrate processing) is continued.

[0057] According to the plasma processing apparatus of this embodiment, the processing conditions in the process (substrate processing) can be kept constant, thereby improving reproducibility and quality.

[0058] (4) During waiting times in process processing (substrate processing) For example, during waiting times when performing process processing (substrate processing) such as lot change (the time between one process processing (substrate processing) and the next process processing (substrate processing)), the magnetic field is generated by the magnetic field generating unit and the magnetic field measuring unit measures the magnetic field. For example, if the magnetic field measurement result by the magnetic field measuring unit falls outside the range of the desired specifications, the current supplied to the electromagnet is adjusted and the inspection is performed again. For example, if the magnetic field measurement result by the magnetic field measuring unit is within the range of the desired specifications, the following processing is performed. For example, the magnetic field measurement may be performed by moving the magnetic field measuring unit and operating multiple electromagnets 51 simultaneously to measure the composite magnetic field generated. Also, during waiting times when performing process processing (substrate processing), the magnetic field measurement process may be simplified and the magnetic field may be checked in a simple manner.

[0059] According to the plasma processing apparatus of this embodiment, the generated magnetic field can be adjusted using idle time during the process (substrate processing).

[0060] Furthermore, according to the plasma processing apparatus of this embodiment, new functions can be added by combining software functions, thereby contributing to process development.

[0061] (5) Real-time process control: For example, magnetic field measurements are continuously performed during process processing to collect data. The progress and quality of the process are then monitored. For example, if the quality fluctuates, the parameters are adjusted.

[0062] According to the plasma processing apparatus of this embodiment, the process can be controlled in real time by integrally controlling the magnetic field and etching parameters. Furthermore, according to the plasma processing apparatus of this embodiment, the progress and quality of the process can be monitored using sensors and data acquisition systems, and parameters can be adjusted by applying control algorithms. According to the plasma processing apparatus of this embodiment, a high-quality etching process and anomaly detection can be achieved by adjusting parameters by applying control algorithms.

[0063] (6) Utilization of artificial intelligence-related technologies and machine learning For example, magnetic field measurements are continuously performed during process processing to collect data. Then, by utilizing artificial intelligence-related technologies and machine learning, process conditions are optimized and problems are prevented.

[0064] According to the plasma processing apparatus of this embodiment, optimal etching conditions can be automatically extracted from process data using artificial intelligence-related technologies and machine learning algorithms, thereby optimizing the process. By optimizing the process, the plasma processing apparatus of this embodiment can find the optimal magnetic field parameters and process conditions, thereby improving the efficiency of the etching process. Furthermore, by analyzing the operation data and maintenance history of the apparatus and creating an optimal maintenance schedule, the plasma processing apparatus of this embodiment can effectively implement preventive maintenance and inspections, thereby maximizing the performance of the apparatus.

[0065] (7) Process Modeling and Simulation For example, magnetic field measurements are continuously performed during process processing to collect data. Then, the effects of the magnetic field and process predictions are made by modeling or simulating the process.

[0066] According to the plasma processing apparatus of this embodiment, the effects of magnetic fields and the process can be predicted by modeling and simulating the plasma etching process using a software tool. By predicting the effects of magnetic fields and the process, the plasma processing apparatus of this embodiment enables the development of effective process design and magnetic field control. Furthermore, the plasma processing apparatus of this embodiment improves the applicability to new materials and structures, and enhances the flexibility of the etching process.

[0067] <Plasma Density Distribution in the Plasma Processing Apparatus According to This Embodiment> Next, the influence of the plasma density distribution in the plasma processing apparatus according to this embodiment on substrate processing will be explained. Figures 6 and 7 are diagrams illustrating the influence of the plasma distribution in the plasma processing apparatus on substrate processing. Figure 6 shows an example of plasma processing without generating a magnetic field, and Figure 7 shows an example of plasma processing with a magnetic field generated.

[0068] When a plasma PLZ is generated between the upper electrode UE and the substrate W, the plasma density distribution of the plasma PLZ may become non-uniform, as shown in Figure 6. When the plasma density distribution of the plasma PLZ is non-uniform, for example, when etching is performed by ions (ION), the direction of etching may be tilted.

[0069] For example, as shown in Figure 6, in region RA, the etching direction is tilted outward from the substrate W (Outer Tilt). In region RB, etching is performed perpendicular to the substrate W. In region RC, the etching direction is tilted inward from the substrate W (Inner Tilt).

[0070] Therefore, as shown in Figure 7, the magnetic field generator MAG can make the plasma density distribution of the plasma PLZ uniform. By making the plasma density distribution of the plasma PLZ uniform, the substrate W can be etched vertically in each of the regions RA, RB, and RC, as shown in Figure 7.

[0071] In recent years, to increase the storage capacity of flash memory, deeper structures are required in the HARC (High Aspect Ratio Contact) process. As etching becomes deeper, the performance of the etching tilt angle becomes more important. Even a slight tilt in etching causes a misalignment between the center of the hole at the top and the center of the hole at the bottom of the deep etching. Therefore, even a slight tilt in etching can cause interference with adjacent patterns or misalignment with the underlying pattern. Consequently, the electrical properties of the final product may deteriorate, and the yield may decrease. Therefore, strict control of the magnetic field is necessary to prevent tilting during etching.

[0072] According to the plasma processing apparatus of this embodiment, by including a magnetic field measuring unit, the magnetic field generated by the magnetic field generating unit can be measured. Furthermore, according to the plasma processing apparatus of this embodiment, the magnetic field when performing plasma generation can be managed by controlling the magnetic field generating unit based on the magnetic field measured by the magnetic field measuring unit.

[0073] <Fourth Embodiment> As a plasma processing apparatus according to the fourth embodiment, a configuration in which a yoke is provided in the magnetic field generation unit will be described. Figure 8 is a bottom view illustrating the configuration of a magnetic field generation unit 150, which is an example of a magnetic field generation unit in the plasma processing apparatus according to the fourth embodiment. Figure 9 is a cross-sectional view illustrating the configuration of a magnetic field generation unit 150, which is an example of a magnetic field generation unit in the plasma processing apparatus according to the fourth embodiment. Specifically, Figure 9 is a cross-sectional view taken along line I-I in Figure 8.

[0074] The magnetic field generating unit 150 comprises electromagnets 151a, 151b, 151c, 151d, and 151e, and a yoke 152. Each of the electromagnets 151a, 151b, 151c, 151d, and 151e is attached to the yoke 152. Each of the electromagnets 151a, 151b, 151c, 151d, and 151e is equipped with a coil (electromagnet coil). In other words, the magnetic field generating unit 150 is equipped with multiple electromagnet coils. Furthermore, the multiple electromagnet coils equipped in the magnetic field generating unit 150 are housed in the yoke 152.

[0075] Figure 10 is a diagram illustrating the configuration of a magnetic field generating unit 150, which is an example of a magnetic field generating unit in a plasma processing apparatus according to the fourth embodiment, and a magnetic field measuring unit 161, a magnetic field measuring unit 162, and a magnetic field measuring unit 163, which are examples of a magnetic field measuring unit.

[0076] As shown by the arrows in Figure 10, the magnetic field generated in the magnetic field generating unit 150 passes through the inside of the yoke 152 and is generated from the yoke 152 towards the substrate W side. Therefore, when using the magnetic field generating unit 150, for example, a magnetic field measuring unit 161 may be installed on the substrate W side of the yoke 152 to measure the magnetic field. Alternatively, since the magnetic field passes through the inside of the yoke 152, a magnetic field measuring unit 162 may be installed inside the yoke 152 to measure the magnetic field. Furthermore, since there is a magnetic field leaking from the yoke 152 in the vicinity of the yoke 152, a magnetic field measuring unit 163 may be installed in the vicinity of the yoke 152 to measure the magnetic field leaking from the yoke 152.

[0077] Note that the position of the magnetic field measuring unit 161 is an example, and it may be placed at a different location on the substrate side of the yoke 152, for example, at the position of the yoke 152 between electromagnets 151a and 151b. Similarly, the position of the magnetic field measuring unit 162 may be placed at a different location inside the yoke 152, as long as it is a location through which the magnetic field passes. Furthermore, the position of the magnetic field measuring unit 163 may also be at a different location, as long as it is a place where the leakage magnetic field from the yoke 152 can be measured.

[0078] Here, we will explain the arrangement of the magnetic field measuring unit. First, we will explain the magnetic field measuring unit 161. As shown in Figure 10, the magnetic field measuring unit 161 is positioned near the inner portion of the electromagnet surrounding the central region of the magnetic field generating unit 150.

[0079] The location where the magnetic field measurement unit 161 is installed is ideal because the magnetic field strength is relatively strong and easy to measure. Furthermore, since the location of the magnetic field measurement unit 161 is closest to the electromagnets, the signal is strong, and the magnetic field measurement is less susceptible to errors and noise. In addition, the location of the magnetic field measurement unit 161 makes it easy to capture the direct influence of the magnetic field, allowing for more accurate control as a representative value of the magnetic field generated by each electromagnet. Moreover, the location of the magnetic field measurement unit 161 has a high correlation with the magnetic field distribution to be corrected and is close to the magnetic field that actually affects the plasma processing, resulting in a greater effect when applying the control.

[0080] To explain in more detail, the magnetic field measurement unit is preferably located directly below the electromagnet, as shown in Figure 10, as shown by the magnetic field measurement unit 161, specifically directly below the inner diameter side of the portion of the yoke 152 where the electromagnet 151a is housed, which is zone Z1. The area directly below the inner diameter side of the portion of the yoke 152 where the electromagnet 151a is housed, which is zone Z1, is a point of magnetic flux concentration, thus providing high measurement sensitivity. Furthermore, since the yoke 152 has a structure that efficiently guides and concentrates magnetic flux, the inner diameter side in particular is close to the central axis and magnetic flux lines tend to converge there. Zone Z1 is near the central axis, and the magnetic field measurement unit 161, which is located in the portion of the yoke 152 where the electromagnet 151a is housed, can capture the local magnetic field strength with high sensitivity.

[0081] Furthermore, the magnetic field measurement results from the magnetic field measurement unit 161 are valid as representative values ​​of the magnetic field in all zones. Zone Z1 is located on the innermost side of multiple zones and is a representative point that easily reflects magnetic field fluctuations in different zones. By placing the magnetic field measurement unit 161 in zone Z1, the overall magnetic field state of the magnetic field generation unit 150 can be efficiently monitored.

[0082] Furthermore, the magnetic field measuring unit 161 is susceptible to magnetic field influences from adjacent zones, making it suitable for detecting minute anomalies. The area directly below the inner diameter side of the yoke 152 is susceptible not only to the magnetic field of zone Z1 but also to the magnetic fields of surrounding adjacent zones, making it easier to detect local anomalies and deviations early.

[0083] Furthermore, the magnetic field measuring unit 161 facilitates physical wiring and ensures relatively easy maintenance. The inner diameter side of the yoke near the center of the yoke 152 is stable as part of the central part of the magnetic field generating unit 150 and as part of the yoke structure, making it easy to install and protect the wiring of the magnetic field measuring unit 161 and providing excellent durability.

[0084] Furthermore, in the inner diameter side of the yoke 152 near the center, the magnetic fields of each zone are concentrated in zone Z1 near the center. Therefore, when a magnetic field is applied to all zones, the magnetic field in the center becomes stronger. Because the magnetic field becomes stronger, the magnetic field strength can be measured stably.

[0085] Next, the magnetic field measuring unit 162 will be described.

[0086] The magnetic field measuring unit 162 is provided in the yoke 152. Since the inside of the yoke 152 is part of the magnetic circuit, the magnetic flux is concentrated there, making it easier to stabilize the magnetic field measurement. Therefore, the magnetic field measuring unit 162 allows for measurements to be taken in a stable magnetic field environment.

[0087] Furthermore, according to the magnetic field measurement unit 162, the influence of leakage magnetic fields from the electromagnet coil is low, which reduces noise near the coil and enables stable measurements.

[0088] Furthermore, since the magnetic field measuring unit 162 is physically protected by the internal structure of the yoke, the risk of damage is low, and the protection of the magnetic field measuring unit 162 can be easily achieved.

[0089] Next, the magnetic field measuring unit 163 will be described.

[0090] According to the magnetic field measuring unit 163, since it is located outside the yoke 152, it offers a high degree of mechanical freedom in installation. Furthermore, because the magnetic field measuring unit 163 is located outside the yoke 152, wiring and maintenance can be easily performed.

[0091] Furthermore, the magnetic field measurement unit 163 allows for the understanding of the overall magnetic field balance of the magnetic field generation unit 150 by utilizing the leakage magnetic field, and this can be used for correction. The magnetic field measurement unit 163 also allows for the understanding of magnetic field characteristics that differ from those inside the yoke 152.

[0092] Furthermore, since the magnetic field measurement unit 163 can sometimes be used to increase the distance from the noise source, it is possible to increase the design flexibility for avoiding the effects of magnetic noise.

[0093] <Fifth Embodiment> A modified arrangement of the magnetic field measuring unit will be described as a plasma processing apparatus according to the fifth embodiment.

[0094] [First Example] First, an example in which magnetic field measuring units are arranged at equal intervals in each zone will be described. Figure 11 is a diagram illustrating a first modified example of the arrangement of magnetic field measuring units in the plasma processing apparatus according to the fifth embodiment. In Figure 11, the explanation will be given using plasma processing apparatus 1C, which is an example of the plasma processing apparatus according to the fifth embodiment. Furthermore, the explanation of plasma processing apparatus 1C will be given using the magnetic field generating unit 50 of plasma processing apparatus 1, which is an example of the plasma processing apparatus according to the first embodiment.

[0095] The plasma processing apparatus 1C includes a plurality of magnetic field measuring units for measuring the strength of the magnetic field generated by the magnetic field generating unit 50. The plasma processing apparatus 1C includes magnetic field measuring units 260a to 260e, magnetic field measuring units 261a to 261e, magnetic field measuring units 262a to 262e, and magnetic field measuring units 263a to 263e. The plasma processing apparatus 1C has a total of 20 magnetic field measuring units.

[0096] Specifically, the plasma processing apparatus 1C includes magnetic field measuring units 260a, 261a, 262a, and 263a below the electromagnet 51a. Each of the magnetic field measuring units 260a, 261a, 262a, and 263a measures the magnetic field in zone Z1. The magnetic field measuring units 260a, 261a, 262a, and 263a are arranged at equal intervals along the circumferential direction of the electromagnet 51a.

[0097] Furthermore, the plasma processing apparatus 1C includes magnetic field measuring units 260b, 261b, 262b, and 263b below the electromagnet 51b. Each of the magnetic field measuring units 260b, 261b, 262b, and 263b measures the magnetic field in zone Z2. The magnetic field measuring units 260b, 261b, 262b, and 263b are arranged at equal intervals along the circumferential direction of the electromagnet 51b.

[0098] Similarly, the plasma processing apparatus 1C includes magnetic field measuring units 260c, 261c, 262c, and 263c below the electromagnet 51c. Each of the magnetic field measuring units 260c, 261c, 262c, and 263c measures the magnetic field in zone Z3. The magnetic field measuring units 260c, 261c, 262c, and 263c are arranged at equal intervals along the circumferential direction of the electromagnet 51c.

[0099] Furthermore, the plasma processing apparatus 1C includes magnetic field measuring units 260d, 261d, 262d, and 263d below the electromagnet 51d. Each of the magnetic field measuring units 260d, 261d, 262d, and 263d measures the magnetic field in zone Z4. The magnetic field measuring units 260d, 261d, 262d, and 263d are arranged at equal intervals along the circumferential direction of the electromagnet 51d. The plasma processing apparatus 1C also includes magnetic field measuring units 260e, 261e, 262e, and 263e below the electromagnet 51e. Each of the magnetic field measuring units 260e, 261e, 262e, and 263e measures the magnetic field in zone Z5. The magnetic field measuring units 260e, 261e, 262e, and 263e are arranged at equal intervals along the circumferential direction of the electromagnet 51e.

[0100] In the plasma processing apparatus 1C, four magnetic field measurement units are arranged at equal intervals in a roughly square or rectangular shape within the plane of each zone. By arranging the four magnetic field measurement units at equal intervals in a roughly square or rectangular shape within the plane of each zone, local non-uniformity and deviations of the magnetic field can be grasped in detail. Furthermore, by averaging multiple points, noise reduction and measurement stability are improved by arranging the four magnetic field measurement units at equal intervals in a roughly square or rectangular shape within the plane of each zone. In addition, by arranging the four magnetic field measurement units at equal intervals in a roughly square or rectangular shape within the plane of each zone, trends and biases in the magnetic field distribution can also be detected.

[0101] In the above example, each zone is provided with multiple magnetic field measuring units, but in some zones, for example, as shown in Figure 2, only one magnetic field measuring unit may be provided. In other words, the plasma processing apparatus 1C may include a first annular electromagnet (e.g., electromagnet 51a) and a second annular electromagnet (e.g., electromagnet 51b) surrounding the first annular electromagnet (e.g., electromagnet 51a). The plasma processing apparatus 1C may also include at least one first magnetic field sensor (e.g., magnetic field measuring unit 60a or magnetic field measuring unit 260a to magnetic field measuring unit 263a (multiple first magnetic field sensors)) positioned below the first annular electromagnet (e.g., electromagnet 51a). Furthermore, the plasma processing apparatus 1C may also include at least one second magnetic field sensor (e.g., magnetic field measuring unit 60b or magnetic field measuring unit 260b to magnetic field measuring unit 263b (multiple second magnetic field sensors)) positioned below the second annular electromagnet (e.g., electromagnet 51b).

[0102] [Second Example] Next, we will describe an example in which the magnetic field measuring unit is located directly below the yoke in the magnetic field generating unit. Figure 12 is a diagram illustrating a second modified example of the arrangement of the magnetic field measuring unit in the plasma processing apparatus according to the fifth embodiment. In Figure 12, we will use a plasma processing apparatus 1D, which is an example of a plasma processing apparatus according to the fifth embodiment, for explanation. Furthermore, we will use the magnetic field generating unit 150 of the plasma processing apparatus according to the fourth embodiment to explain the plasma processing apparatus 1D.

[0103] The plasma processing apparatus 1D includes a plurality of magnetic field measuring units for measuring the strength of the magnetic field generated by the magnetic field generating unit 150. The plasma processing apparatus 1D includes magnetic field measuring units 360a to 360f, magnetic field measuring units 361a to 361f, magnetic field measuring units 362a to 362f, and magnetic field measuring units 363a to 363f. The plasma processing apparatus 1D has a total of 24 magnetic field measuring units. In the plasma processing apparatus 1D, some of the magnetic field measuring units (magnetic field sensors) are positioned between two electromagnets (electromagnetic coils), particularly between two adjacent electromagnets (electromagnetic coils).

[0104] The yoke 152 has a housing section 152a for housing electromagnet 151a, a housing section 152b for housing electromagnet 151b, a housing section 152c for housing electromagnet 151c, a housing section 152d for housing electromagnet 151d, and a housing section 152e for housing electromagnet 151e. The housing section 152a is surrounded laterally by walls 153a and 153b. The housing section 152b is surrounded laterally by walls 153b and 153c. The housing section 152c is surrounded laterally by walls 153c and 153d. The housing section 152d is surrounded laterally by walls 153d and 153e. The housing section 152e is surrounded laterally by walls 153e and 153f.

[0105] Specifically, the plasma processing apparatus 1D is equipped with magnetic field measuring units 360a, 361a, 362a, and 363a at the lower end of the wall portion 153a of the yoke 152 on the central side of the electromagnet 151a. The magnetic field measuring units 360a, 361a, 362a, and 363a are arranged at equal intervals along the circumferential direction of the electromagnet 151a.

[0106] Furthermore, the plasma processing apparatus 1D is equipped with magnetic field measuring units 360b, 361b, 362b, and 363b at the lower end of the wall portion 153b of the yoke 152 between the electromagnets 151a and 151b. The magnetic field measuring units 360b, 361b, 362b, and 363b are arranged at equal intervals along the circumferential direction of the electromagnets 151a and 151b.

[0107] Similarly, the plasma processing apparatus 1D is equipped with magnetic field measuring units 360c, 361c, 362c, and 363c at the lower end of the wall portion 153c of the yoke 152 between the electromagnets 151b and 151c. The magnetic field measuring units 360c, 361c, 362c, and 363c are arranged at equal intervals along the circumferential direction of the electromagnets 151b and 151c.

[0108] Furthermore, the plasma processing apparatus 1D is equipped with magnetic field measuring units 360d, 361d, 362d, and 363d at the lower end of the wall portion 153d of the yoke 152 between electromagnets 151c and 151d. The magnetic field measuring units 360d, 361d, 362d, and 363d are arranged at equal intervals along the circumferential direction of electromagnets 151c and 151d. The plasma processing apparatus 1D is equipped with magnetic field measuring units 360e, 361e, 362e, and 363e at the lower end of the wall portion 153e of the yoke 152 between electromagnets 151d and 151e. The magnetic field measuring units 360e, 361e, 362e, and 363e are arranged at equal intervals along the circumferential direction of the electromagnets 151d and 151e. The plasma processing apparatus 1D includes magnetic field measuring units 360f, 361f, 362f, and 363f at the lower end of the wall portion 153f of the yoke 152 outside the electromagnet 151e. The magnetic field measuring units 360f, 361f, 362f, and 363f are arranged at equal intervals along the circumferential direction of the electromagnet 151e.

[0109] In the plasma processing apparatus 1D, the magnetic field measurement unit is positioned directly below the yoke (where the magnetic flux is concentrated) near the electromagnet. By positioning the magnetic field measurement unit directly below the yoke near the electromagnet, a strong magnetic field and a stable measurement environment can be ensured. Furthermore, by positioning the magnetic field measurement unit directly below the yoke near the electromagnet, physical protection of the magnetic field measurement unit can be easily implemented. Moreover, by positioning the magnetic field measurement unit directly below the yoke near the electromagnet, high-precision measurements consistent with the magnetic circuit design can be achieved.

[0110] In both the first and second examples, the multiple magnetic field measuring units are arranged at equal intervals along the circumferential direction of the electromagnet, but they may also be arranged at unequal intervals.

[0111] [Third Example] Next, an example of a multi-layer arrangement of magnetic field measuring units will be described. Figure 13 is a diagram illustrating a third modified example of the arrangement of magnetic field measuring units in a plasma processing apparatus according to the fifth embodiment. In Figure 13, a plasma processing apparatus 1E, which is an example of a plasma processing apparatus according to the fifth embodiment, will be used for the explanation. Furthermore, the plasma processing apparatus 1E will be explained using the configuration of a plasma processing apparatus 1A, which is an example of a plasma processing apparatus according to the second embodiment.

[0112] The plasma processing apparatus 1E includes a plurality of magnetic field measuring units for measuring the strength of the magnetic field generated by the magnetic field generating unit 50. The plasma processing apparatus 1E includes a magnetic field measuring unit 460, a magnetic field measuring unit 461, and a magnetic field measuring unit 462. The plasma processing apparatus 1E has a total of three magnetic field measuring units.

[0113] Specifically, the plasma processing apparatus 1E includes a magnetic field measuring unit 460 on the central side of the electromagnet 51a. The plasma processing apparatus 1E also includes a magnetic field measuring unit 461 located inside the magnetic field generating unit 50, above the magnetic field measuring unit 460. Furthermore, the plasma processing apparatus 1E includes a magnetic field measuring unit 462 located on the upper part of the cooling plate 15, below the magnetic field measuring unit 460.

[0114] The magnetic field measuring units 462, 460, and 461 are arranged in order from bottom to top.

[0115] In the plasma processing apparatus 1D, multiple magnetic field measuring units are arranged in the height direction within the same zone, such as on the top surface, inside, and below the yoke. By arranging multiple magnetic field measuring units in the height direction, it is possible to monitor the three-dimensional distribution of the magnetic field and the leakage magnetic field. Furthermore, by arranging multiple magnetic field measuring units in the height direction, it is possible to analyze the effects of magnetic field fluctuations in the height direction and make corrections based on the analysis results.

[0116] <Sixth Embodiment> The process performed using the plasma processing apparatus according to the third embodiment will be described as the plasma processing apparatus according to the sixth embodiment. The process performed by the control unit of the plasma processing apparatus according to the sixth embodiment will be described below.

[0117] [First Example] As a first example, we will show an example in which the movement of the magnetic field measuring unit and the measurement of the magnetic field are repeated as a basic sequence. Figure 14 is a diagram illustrating a first example of the magnetic field measurement process in the plasma processing apparatus according to the sixth embodiment. In the following description, we will use plasma processing apparatus 1B, which is an example of the plasma processing apparatus according to the third embodiment.

[0118] (Step S1) When processing begins, the magnetic field measuring unit 260 is moved to the zone where the next measurement will be performed. For example, immediately after the start of processing, it is moved to zone Z1, which is near the electromagnet 51a. The control unit in the plasma processing apparatus 1B controls the magnetic field measuring unit 260 to move to the zone where the next measurement will be performed.

[0119] (Step S2) Next, it is confirmed that the magnetic field measuring unit 260 has moved to the zone where the next measurement will be performed. The control unit in the plasma processing apparatus 1B confirms whether the magnetic field measuring unit 260 has moved to the zone where the next measurement will be performed based on the operating state and position of the magnetic field measuring unit 260. Once the control unit in the plasma processing apparatus 1B confirms that the magnetic field measuring unit 260 has moved to the zone where the next measurement will be performed, it proceeds to step S3.

[0120] (Step S3) The magnetic field measuring unit 260 measures the magnetic field in the moved zone. The control unit in the plasma processing apparatus 1B controls the magnetic field measuring unit 260 to measure the magnetic field strength. The control unit in the plasma processing apparatus 1B then acquires the results measured by the magnetic field measuring unit 260.

[0121] (Step S4) The control unit in the plasma processing apparatus 1B determines whether the measurement result obtained from the magnetic field measurement in step S3 is within a predetermined reference range based on the specifications, etc. If the result of the magnetic field measurement is not within the reference range (NO in step S4), the control unit in the plasma processing apparatus 1B proceeds to step S5. If the result of the magnetic field measurement is within the reference range (YES in step S4), the control unit in the plasma processing apparatus 1B proceeds to step S6.

[0122] (Step S5) If the result of the magnetic field measurement is not within the reference range (NO in Step S4), the control unit in the plasma processing apparatus 1B adjusts the excitation current supplied from the electromagnet excitation circuit to the electromagnet near the zone where the magnetic field measurement was performed so that it falls within the reference range. Then, the control unit in the plasma processing apparatus 1B returns to Step S3 and repeats the process.

[0123] (Step S6) If the result of the magnetic field measurement is within the reference range (YES in Step S4), the control unit in the plasma processing apparatus 1B determines whether the measurement has been completed for all zones. If the measurement has not been completed for all zones (NO in Step S6), the control unit in the plasma processing apparatus 1B returns to Step S1 and moves to the next zone. If the measurement has been completed for all zones (YES in Step S6), the control unit in the plasma processing apparatus 1B terminates the process.

[0124] [Second Example] As a second example, we will show an example in which, after measuring all zones, the zones whose measurement results fall outside the standard range (zones below the standard) are re-examined and adjusted in detail. By re-examining and adjusting the zones that do not meet the standard (below the standard), efficiency can be improved. Figure 15 is a diagram illustrating a second example of the magnetic field measurement process in the plasma processing apparatus according to the sixth embodiment.

[0125] (Step S11) When processing begins, the magnetic field measuring unit 260 sequentially measures all zones. The control unit in the plasma processing apparatus 1B controls the magnetic field measuring unit 260 to move sequentially to all zones while performing magnetic field measurements. The control unit in the plasma processing apparatus 1B then acquires the measured results from the magnetic field measuring unit 260. In step S11, the control unit repeats the process of moving the magnetic field measuring unit 260 to the vicinity of the zone (electromagnet) and the process of acquiring the output from the magnetic field measuring unit 260. Then, based on the multiple outputs acquired from the magnetic field measuring unit 260, the following steps are executed.

[0126] (Step S12) Next, the measurement results from step S11 that fall outside the reference range (zone below the reference) are extracted. The control unit of the plasma processing apparatus 1B uses the measurement results from step S11 to extract the zones in which the measurement results fall outside a predetermined reference range.

[0127] (Step S13) Next, the magnetic field measuring unit 260 is moved to the zone below the standard. The control unit in the plasma processing apparatus 1B controls the magnetic field measuring unit 260 to move to the zone that was determined to be below the standard in step S12.

[0128] (Step S14) Next, the magnetic field measuring unit 260 measures the magnetic field in the zone below the moved reference point. The control unit in the plasma processing apparatus 1B controls the magnetic field measuring unit 260 to measure the magnetic field strength. The control unit in the plasma processing apparatus 1B then acquires the results measured by the magnetic field measuring unit 260.

[0129] (Step S15) Next, it is determined whether the result of the magnetic field measurement performed in step S14 is within the reference range. If the result of the magnetic field measurement is not within the reference range (NO in step S15), the control unit of the plasma processing apparatus 1B proceeds to step S16. If the result of the magnetic field measurement is within the reference range (YES in step S15), the control unit of the plasma processing apparatus 1B proceeds to step S17.

[0130] (Step S16) If the result of the magnetic field measurement is not within the reference range (NO in Step S15), the control unit in the plasma processing apparatus 1B adjusts the excitation current supplied from the electromagnet excitation circuit to the electromagnet 51 near the zone where the magnetic field measurement was performed so that it falls within the reference range. Then, the control unit in the plasma processing apparatus 1B returns to Step S14 and repeats the process.

[0131] (Step S17) If the result of the magnetic field measurement is within the reference range (YES in Step S15), the control unit in the plasma processing apparatus 1B determines whether adjustment has been completed for all zones below the reference range. If adjustment has not been completed for all zones below the reference range (NO in Step S17), the control unit in the plasma processing apparatus 1B returns to Step S13 and repeats the process. If adjustment has been completed for all zones below the reference range (YES in Step S17), the control unit in the plasma processing apparatus 1B terminates the process.

[0132] [Third Example] As a third example, we will show an example in which magnetic field correction is performed in real time immediately after measurement. Performing magnetic field correction in real time immediately after measurement promotes process stabilization. Figure 16 is a diagram illustrating a third example of the magnetic field measurement process in the plasma processing apparatus according to the sixth embodiment.

[0133] (Step S21) When processing starts, the magnetic field measuring unit 260 is moved to the zone where the next measurement will be performed. For example, immediately after the start of processing, it is moved to zone Z1, which is near the electromagnet 51a. The control unit in the plasma processing apparatus 1B controls the magnetic field measuring unit 260 to move to the zone where the next measurement will be performed.

[0134] (Step S22) Next, it is confirmed that the magnetic field measuring unit 260 has moved to the zone where the next measurement will be performed. The control unit in the plasma processing apparatus 1B confirms whether the magnetic field measuring unit 260 has moved to the zone where the next measurement will be performed based on the operating state and position of the magnetic field measuring unit 260. Once the control unit in the plasma processing apparatus 1B confirms that the magnetic field measuring unit 260 has moved to the zone where the next measurement will be performed, it proceeds to step S23.

[0135] (Step S23) The magnetic field measuring unit 260 measures the magnetic field in the moved zone. The control unit in the plasma processing apparatus 1B controls the magnetic field measuring unit 260 to measure the magnetic field strength. The control unit in the plasma processing apparatus 1B then acquires the results measured by the magnetic field measuring unit 260.

[0136] (Step S24) Based on the measurement results measured in step S23, the excitation current supplied from the electromagnet excitation circuit to the electromagnet near the zone where the magnetic field measurement was performed is adjusted (immediate correction). The control unit in the plasma processing apparatus 1B controls the electromagnet excitation circuit to adjust (correct) the excitation current supplied to the electromagnet near the zone where the magnetic field measurement was performed, based on the measurement results performed in step S23.

[0137] (Step S25) The control unit in the plasma processing apparatus 1B determines whether the measurement has been completed for all zones. If the measurement has not been completed for all zones (NO in step S25), the control unit in the plasma processing apparatus 1B returns to step S21 and moves to the next zone. If the measurement has been completed for all zones (YES in step S25), the control unit in the plasma processing apparatus 1B proceeds to step S26.

[0138] (Step S26) The control unit in the plasma processing apparatus 1B performs a final adjustment for all zones at once, if necessary. Then, the control unit in the plasma processing apparatus 1B terminates the process.

[0139] [Fourth Example] As a fourth example, an example is shown in which measurement by multiple magnetic field measuring units is combined with measurement by a mobile magnetic field measuring unit. By combining measurement by multiple magnetic field measuring units with measurement by a mobile magnetic field measuring unit, both efficiency and accuracy can be achieved. Figure 17 is a diagram illustrating a fourth example of the magnetic field measurement process in a plasma processing apparatus according to the sixth embodiment. The plasma processing apparatus that performs the fourth example includes magnetic field measuring units 60a, 60b, 60c, 60d, and 60e, which are provided in the plasma processing apparatus 1, an example of the plasma processing apparatus according to the first embodiment. Furthermore, the plasma processing apparatus that performs the fourth example further includes a magnetic field measuring unit 260 of the plasma processing apparatus 1B, which is an example of the plasma processing apparatus according to the third embodiment.

[0140] (Step S31) When processing begins, simultaneous measurements are first performed by multiple magnetic field measuring units. Measurements are performed simultaneously on multiple zones by magnetic field measuring units 60a, 60b, 60c, 60d, and 60e. The control unit in the plasma processing apparatus performing the fourth example controls magnetic field measuring units 60a, 60b, 60c, 60d, and 60e to measure magnetic fields simultaneously. The control unit in the plasma processing apparatus performing the fourth example then acquires the measured results from each of the magnetic field measuring units 60a, 60b, 60c, 60d, and 60e.

[0141] (Step S32) Next, using the measurement results from step S31, zones with large changes over time are extracted, for example, by comparing them with previously measured results. The control unit of the plasma processing apparatus performing the fourth example extracts zones with large changes over time using the measurement results from step S31.

[0142] (Step S33) Next, the magnetic field measuring unit 260, which is a mobile magnetic field measuring unit, is moved to the zone with large temporal changes that was extracted in step S32. The control unit of the plasma processing apparatus that performs the fourth example controls the movement of the magnetic field measuring unit 260 to the zone that was determined to have large temporal changes in step S32.

[0143] (Step S34) Next, the magnetic field measuring unit 260 measures the magnetic field in the zone where the change over time is large. The control unit in the plasma processing apparatus performing the fourth example controls the magnetic field measuring unit 260 to measure the magnetic field strength. The control unit in the plasma processing apparatus performing the fourth example then acquires the results measured by the magnetic field measuring unit 260.

[0144] (Step S35) Next, it is determined whether the result of the magnetic field measurement performed in step S34 is within the reference range. If the result of the magnetic field measurement is not within the reference range (NO in step S35), the control unit of the plasma processing apparatus performing the fourth example proceeds to step S36. If the result of the magnetic field measurement is within the reference range (YES in step S35), the control unit of the plasma processing apparatus performing the fourth example terminates the process.

[0145] (Step S36) If the result of the magnetic field measurement is not within the reference range (NO in Step S35), the control unit of the plasma processing apparatus performing the fourth example adjusts the excitation current supplied from the electromagnet excitation circuit to the electromagnet 51 near the zone where the magnetic field measurement was performed so that it falls within the reference range. Then, the control unit of the plasma processing apparatus performing the fourth example returns to Step S34 and repeats the process.

[0146] Magnetic field measuring units 60a, 60b, 60c, 60d, and 60e are examples of the first magnetic field measuring unit, and magnetic field measuring unit 260 is an example of the second magnetic field measuring unit.

[0147] <Seventh Embodiment> As a plasma processing apparatus according to the seventh embodiment, a drive unit for moving the magnetic field measuring unit in the plasma processing apparatus according to the third embodiment will be described. Figure 18 is a diagram illustrating a drive unit 265 for moving the magnetic field measuring unit 260 of the plasma processing apparatus 1F, which is an example of a plasma processing apparatus according to the seventh embodiment.

[0148] The drive unit 265 moves the magnetic field measuring unit 260 along the direction of arrow D. The drive unit 265 comprises a guide unit 265g, a motor unit 265m, and a position detection unit 265e.

[0149] The guide section 265g moves the magnetic field measuring section 260 along the desired direction. The guide section 265g is composed of a linear guide, such as a linear rail or a linear bearing.

[0150] The motor unit 265m supplies power to move the magnetic field measuring unit 260. The motor unit 265m is composed of a stepping motor and a servo motor.

[0151] The drive unit 265 is driven by a linear guide, the guide unit 265g, and a motor, the motor unit 265m, enabling highly accurate and stable linear movement. Furthermore, due to the high positioning accuracy, it can move to a repeatable measurement position.

[0152] For example, in the guide section 265g, the power from the motor section 265m may be transmitted by a ball screw drive mechanism. By using a ball screw drive mechanism, highly efficient conversion from rotational motion to linear motion can be achieved, and a large thrust can be obtained. In addition, by using a ball screw drive mechanism, quietness and durability can be improved, contributing to improved long-term reliability.

[0153] Furthermore, the power from the motor section 265m may be transmitted to the guide section 265g by a belt drive mechanism. The belt drive mechanism is lightweight and suitable for high-speed movement, and can be effectively used for transporting the magnetic field measuring section over a wide area of ​​large equipment. The positional accuracy when transporting by the belt drive mechanism can be adjusted by combining it with the guide.

[0154] Furthermore, the power from the motor section 265m may be transmitted to the guide section 265g via a cam mechanism or link mechanism. The cam mechanism or link mechanism allows for complex trajectory control and handling of specially shaped transport paths. The cam mechanism or link mechanism also allows for effective implementation in confined spaces and devices with special shapes. This is particularly effective when moving multiple magnetic field measuring units.

[0155] The position detection unit 265e detects the position of the magnetic field measuring unit 260. The position detection unit 265e is, for example, an optical or magnetic encoder. By using the position detection unit 265e, the position of the moving object can be detected with high precision. Furthermore, by using the results detected by the position detection unit 265e for real-time feedback control, reliable and rapid movement to the target position can be achieved.

[0156] The position detection unit 265e may be an optical or other type of linear scale. By using a linear scale, high-resolution linear position detection is possible. Furthermore, it can be applied to fine position control that matches the measurement accuracy of the magnetic field detection unit.

[0157] Furthermore, proximity switches or limit sensors may be used for detecting the limits of the movement range or for safe stopping functions.

[0158] Flexible cables may be used as wiring and signal transmission technologies. Flexible cables offer superior bending resistance and can accommodate mechanical movement. Furthermore, using flexible cables allows for the adoption of heat-resistant and chemical-resistant materials, improving environmental adaptability.

[0159] Additionally, slip rings may be used as a wiring and signal transmission technology. By using slip rings, electrical contacts can be supplied to rotating or reciprocating parts, preventing wiring breakage.

[0160] Furthermore, contactless power supply and wireless communication may be used as wiring and signal transmission technologies. Contactless power supply and wireless communication eliminate the risk of cable breakage by making power supply and signal transmission contactless. In addition, contactless power supply and wireless communication expand wiring flexibility through the application of wireless technology.

[0161] Further auxiliary functions and safety mechanisms may be provided. For example, collision detection and torque limiting mechanisms may be provided to detect obstacles during movement and stop operation in case of overload, thereby protecting the device and sensors. Also, for example, dampers and vibration absorption structures may be provided to suppress vibrations during movement and maintain measurement accuracy. Furthermore, an automatic calibration function may be provided to correct misalignment of the drive mechanism's position sensor and to automatically correct operational errors.

[0162] The position detection unit 265e is an example of a position detection sensor.

[0163] The embodiments disclosed above include, for example, the following aspects:

[0164] [Note 1] A plasma processing apparatus comprising: a plasma processing chamber; a magnetic field generating unit disposed above the plasma processing chamber; at least one magnetic field sensor; and a control unit configured to control the magnetic field generating unit based on the output of the magnetic field sensor.

[0165] [Note 2] The plasma processing apparatus according to Note 1, wherein the magnetic field generating unit includes a plurality of electromagnets.

[0166] [Note 3] The plasma processing apparatus according to Note 2, wherein the at least one magnetic field sensor includes a plurality of magnetic field sensors, and each magnetic field sensor is positioned below one of the plurality of electromagnets.

[0167] [Note 4] The plasma processing apparatus according to Note 1, wherein the magnetic field generating unit includes a plurality of annular electromagnets.

[0168] [Note 5] The plasma processing apparatus according to Note 4, wherein the plurality of annular electromagnets include a first annular electromagnet and a second annular electromagnet surrounding the first annular electromagnet, and the at least one magnetic field sensor includes at least one first magnetic field sensor disposed below the first annular electromagnet and at least one second magnetic field sensor disposed below the second annular electromagnet.

[0169] [Note 6] The plasma processing apparatus according to Note 5, wherein the at least one first magnetic field sensor includes a plurality of first magnetic field sensors.

[0170] [Note 7] The plasma processing apparatus according to Note 6, wherein the at least one second magnetic field sensor includes a plurality of second magnetic field sensors.

[0171] [Note 8] The plasma processing apparatus according to Note 5, wherein the at least one second magnetic field sensor includes a plurality of second magnetic field sensors.

[0172] [Note 9] The plasma processing apparatus according to Note 1, wherein the magnetic field generating unit includes a plurality of annular electromagnets arranged concentrically, the plurality of annular electromagnets include a first annular electromagnet that surrounds the central region of the magnetic field generating unit in a plan view, and the at least one magnetic field sensor is arranged near the inner portion of the first annular electromagnet.

[0173] [Note 10] The plasma processing apparatus according to Note 1, wherein the magnetic field generating unit comprises a plurality of electromagnet coils and a yoke housing the plurality of electromagnet coils, and the at least one magnetic field sensor is disposed within the yoke.

[0174] [Note 11] The plasma processing apparatus according to Note 10, wherein the at least one magnetic field sensor includes a plurality of magnetic field sensors, and each magnetic field sensor is positioned between two of the plurality of electromagnet coils.

[0175] [Note 12] A plasma processing apparatus comprising: a plasma processing chamber; a magnetic field generating unit disposed above the plasma processing chamber; a movable magnetic field sensor; a drive unit configured to move the movable magnetic field sensor along the magnetic field generating unit; and a control unit configured to control the magnetic field generating unit based on the output of the movable magnetic field sensor.

[0176] [Note 13] The movable magnetic field sensor is disposed between the plasma processing chamber and the magnetic field generating unit, as described in Note 12.

[0177] [Note 14] The plasma processing apparatus according to either Note 12 or Note 13, wherein the magnetic field generating unit includes a plurality of electromagnets.

[0178] [Note 15] The plasma processing apparatus according to Note 14, wherein the plurality of electromagnets include a plurality of annular electromagnets arranged in a concentric circle.

[0179] [Note 16] The plasma processing apparatus according to either Note 14 or Note 15, further comprising a position detection sensor configured to detect the position of the movable magnetic field sensor, wherein the control unit is configured to control the drive unit based on the output of the position detection sensor.

[0180] [Note 17] The plasma processing apparatus according to Note 16, wherein the control unit is configured to perform the steps of: (a) controlling the drive unit to move the movable magnetic field sensor to the vicinity of one of the plurality of electromagnets; (b) acquiring the output of the movable magnetic field sensor; and (c) controlling the magnetic field generating unit based on the acquired output.

[0181] [Note 18] The plasma processing apparatus according to Note 16, wherein the control unit is configured to perform: (a) the step of controlling the drive unit to move the movable magnetic field sensor to the vicinity of one of the plurality of electromagnets; (b) the step of acquiring the output of the movable magnetic field sensor; (c) the step of repeating the steps (a) and (b); and (d) the step of controlling the magnetic field generating unit based on the plurality of outputs acquired in the step (c).

[0182] Furthermore, the embodiments disclosed above also include, for example, the following other embodiments.

[0183] [Note 1] A plasma processing apparatus comprising: a plasma processing chamber having a plasma processing space inside; a substrate support section provided inside the plasma processing chamber and supporting a substrate; a plasma generation section that generates plasma in the plasma processing space; a magnetic field generation section provided above the substrate support section and generating a magnetic field in the plasma processing space; a magnetic field measuring section that measures the magnetic field generated by the magnetic field generation section; and a control section that controls the magnetic field generation section based on the strength of the magnetic field measured by the magnetic field measuring section.

[0184] [Note 2] The plasma processing apparatus according to Note 1, wherein the magnetic field generating unit is divided into a plurality of zones.

[0185] [Note 3] The plasma processing apparatus according to Note 2, wherein the magnetic field measuring unit is provided below each of the plurality of zones.

[0186] [Note 4] The plasma processing apparatus according to either Note 1 or Note 2, wherein the magnetic field measuring unit is provided near the center of the magnetic field generating unit.

[0187] [Note 5] The plasma processing apparatus according to either Note 1 or Note 2, wherein the magnetic field generating unit comprises a coil and a yoke surrounding the coil, and the magnetic field measuring unit is provided inside the yoke.

[0188] [Note 6] The plasma processing apparatus according to either Note 1 or Note 2, wherein the magnetic field generating unit comprises a coil and a yoke surrounding the coil, and the magnetic field measuring unit measures the magnetic field leaking to the outside of the yoke. [Note 7] The plasma processing apparatus according to either Note 1 or Note 2, wherein the magnetic field measuring unit moves below the magnetic field generating unit.

[0189] [Note 8] The plasma processing apparatus according to any one of Notes 1 to 7, wherein the control unit controls the current supplied to the magnetic field generating unit.

[0190] [Note 9] The plasma processing apparatus according to any one of Notes 1 to 8, wherein the control unit controls the magnetic field measuring unit to perform magnetic field measurement during the shipment inspection of the apparatus.

[0191] [Note 10] The plasma processing apparatus according to any one of Notes 1 to 9, wherein the control unit controls the magnetic field measuring unit to perform magnetic field measurement during maintenance of the apparatus.

[0192] [Note 11] The plasma processing apparatus according to any one of Notes 1 to 10, wherein the control unit controls the magnetic field measuring unit to perform magnetic field measurement during process processing.

[0193] Each of the magnetic field measuring units 60a, 60b, 60c, 60d, 60e, 160, and 260 is an example of a magnetic field sensor. The magnetic field measuring unit 260 is an example of a movable magnetic field sensor. As described above, the plasma processing apparatus of this disclosure may have one magnetic field measuring unit (one magnetic field sensor) or multiple magnetic field measuring units (multiple magnetic field sensors). In other words, the plasma processing apparatus of this disclosure only needs to have at least one magnetic field measuring unit (at least one magnetic field sensor).

[0194] The plasma processing apparatus according to the present embodiment disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner.

[0195] This application claims priority to Basic Patent Application No. 2024-185325, filed with the Japan Patent Office on October 21, 2024, the entire contents of which are incorporated herein by reference.

[0196] 1, 1A, 1B, 1C, 1D, 1E, 1F Plasma processing apparatus 2 Control unit 10s Plasma processing space 11 Substrate support unit 13 Shower head 50 Magnetic field generation unit 51, 51a, 51b, 51c, 51d, 51e Electromagnet 59 Electromagnet excitation circuit 60a, 60b, 60c, 60d, 60e, 160, 260 Magnetic field measurement unit 150 Magnetic field generation unit 151a, 151b, 151c, 151d, 151e Electromagnet 152 Yoke 152a, 152b, 152c, 152d, 152e Housing unit 153a, 153b, 153c, 153d, 153e, 153f Wall unit 161, 162, 163 Magnetic field measurement unit 260a to 260e, 261a to 261e, 262a to 262e, 263a to 263e, 360a to 360f, 361a to 361f, 362a to 362f, 363a to 363f, 460, 461, 462 Magnetic field measurement unit 265 Drive unit 265e Position detection unit 265g Guide unit 265m Motor unit MAG Magnetic field generation unit PLZ Plasma RA, RB, RC Region UE Upper electrode W Substrate Z1, Z2, Z3, Z4, Z5 Zone

Claims

1. A plasma processing apparatus comprising: a plasma processing chamber; a magnetic field generating unit disposed above the plasma processing chamber; at least one magnetic field sensor; and a control unit configured to control the magnetic field generating unit based on the output of the magnetic field sensor.

2. The plasma processing apparatus according to claim 1, wherein the magnetic field generating unit includes a plurality of electromagnets.

3. The plasma processing apparatus according to claim 2, wherein the at least one magnetic field sensor comprises a plurality of magnetic field sensors, each magnetic field sensor is positioned below any of the plurality of electromagnets.

4. The plasma processing apparatus according to claim 1, wherein the magnetic field generating unit includes a plurality of annular electromagnets.

5. The plasma processing apparatus according to claim 4, wherein the plurality of annular electromagnets include a first annular electromagnet and a second annular electromagnet surrounding the first annular electromagnet, and the at least one magnetic field sensor includes at least one first magnetic field sensor disposed below the first annular electromagnet and at least one second magnetic field sensor disposed below the second annular electromagnet.

6. The plasma processing apparatus according to claim 5, wherein the at least one first magnetic field sensor includes a plurality of first magnetic field sensors.

7. The plasma processing apparatus according to claim 6, wherein the at least one second magnetic field sensor includes a plurality of second magnetic field sensors.

8. The plasma processing apparatus according to claim 5, wherein the at least one second magnetic field sensor includes a plurality of second magnetic field sensors.

9. The plasma processing apparatus according to claim 1, wherein the magnetic field generating unit includes a plurality of annular electromagnets arranged concentrically, the plurality of annular electromagnets include a first annular electromagnet that surrounds the central region of the magnetic field generating unit in a plan view, and the at least one magnetic field sensor is arranged near the inner portion of the first annular electromagnet.

10. The plasma processing apparatus according to claim 1, wherein the magnetic field generating unit comprises a plurality of electromagnet coils and a yoke housing the plurality of electromagnet coils, and the at least one magnetic field sensor is disposed within the yoke.

11. The plasma processing apparatus according to claim 10, wherein the at least one magnetic field sensor comprises a plurality of magnetic field sensors, each magnetic field sensor being positioned between two of the plurality of electromagnet coils.

12. A plasma processing apparatus comprising: a plasma processing chamber; a magnetic field generating unit disposed above the plasma processing chamber; a movable magnetic field sensor; a drive unit configured to move the movable magnetic field sensor along the magnetic field generating unit; and a control unit configured to control the magnetic field generating unit based on the output of the movable magnetic field sensor.

13. The plasma processing apparatus according to claim 12, wherein the movable magnetic field sensor is disposed between the plasma processing chamber and the magnetic field generating unit.

14. The plasma processing apparatus according to claim 13, wherein the magnetic field generating unit includes a plurality of electromagnets.

15. The plasma processing apparatus according to claim 14, wherein the plurality of electromagnets include a plurality of annular electromagnets arranged in a concentric circle.

16. The plasma processing apparatus according to claim 14 or 15, further comprising a position detection sensor configured to detect the position of the movable magnetic field sensor, wherein the control unit is configured to control the drive unit based on the output of the position detection sensor.

17. The plasma processing apparatus according to claim 16, wherein the control unit is configured to perform the steps of: (a) controlling the drive unit to move the movable magnetic field sensor to the vicinity of one of the plurality of electromagnets; (b) acquiring the output of the movable magnetic field sensor; and (c) controlling the magnetic field generating unit based on the acquired output.

18. The plasma processing apparatus according to claim 16, wherein the control unit is configured to perform: (a) the step of controlling the drive unit to move the movable magnetic field sensor to the vicinity of one of the plurality of electromagnets; (b) the step of acquiring the output of the movable magnetic field sensor; (c) the step of repeating the steps (a) and (b); and (d) the step of controlling the magnetic field generating unit based on the plurality of outputs acquired in the step (c).

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