Substrate cutting method using laser beam deflection system

Abstract

A substrate cutting method according to an embodiment of the present invention comprises the steps of: forming a substrate and a protective film on the substrate including a wiring layer; exposing the substrate by removing at least a portion of the wiring layer by performing a laser grooving process; cutting the exposed substrate by performing a dicing process; and removing the protective film. The laser grooving process is performed by a laser beam deflection system.

Description

Substrate cutting method using a laser beam deflection system

[0001] The present invention relates to a method for cutting a substrate using a laser beam deflection system.

[0002] Recently, due to the trend toward higher performance in semiconductor chips, the integration density of semiconductor chips is increasing, and the difficulty of the process for forming semiconductor chips is increasing. For example, in the case of the substrate dicing process for separating individual chip dies from the substrate, the difficulty of the process is increasing as the thickness of the substrate decreases.

[0003] Accordingly, various studies are being conducted to cut substrates using not only the diamond blade dicing process but also lasers, plasma, or combinations thereof.

[0004] The present invention is derived from research conducted as part of the Semiconductor Advanced Packaging Core Technology Development Project of the Ministry of Science and ICT (Project No.: 2710006590, Project No.: 00423802, Project Management Agency: National Research Foundation of Korea, Research Project Title: Development of Core Technology for Ultra-thin Wafer Dicing Process Equipment Using Ultra Short Pulse Laser Grooving and Plasma Dry Etch, Project Performing Agency: PSK Holdings Co., Ltd., Research Period: 2024.04.01~2024.12.31).

[0005] Meanwhile, the Korean government, the provider of the problem, has no property interest in all aspects of the present invention.

[0006] One of the technical problems that the technical concept of the present invention aims to solve is to provide a substrate cutting method with improved process difficulty or productivity using a laser beam deflection system.

[0007] A substrate cutting method according to exemplary embodiments comprises the steps of forming a protective film on a substrate including a substrate and a wiring layer, performing a laser grooving process to remove at least a portion of the wiring layer to expose the substrate, performing a dicing process to cut the exposed substrate, and removing the protective film, wherein the laser grooving process may be performed by a laser beam deflection system.

[0008] Additionally, the laser beam deflection system may include a laser emitter, an acousto-optic deflector that diffracts a beam emitted from the laser emitter to form a deflection beam having multiple paths, and a scanner that directs the deflection beam toward a stage on which the substrate is placed.

[0009] Additionally, the laser beam deflection system further includes a control unit, the control unit controls the movement of at least one of the acousto-optic deflector, the scanner, or the stage, and the laser grooving process can be performed by the control unit while the deflection beam is irradiated at a specific location.

[0010] In addition, the control unit can control the scanner to control the position where the deflection beam is irradiated when the operating range is below a first reference value, and control the stage to control the position where the deflection beam is irradiated when the range is above the first reference value and below a second reference value.

[0011] In addition, the control unit can control the movement of the acousto-optic deflector to irradiate a deflected beam in the width direction of the scribe line area of ​​the substrate, and control the movement of the scanner to irradiate the deflected beam in the length direction of the scribe line area.

[0012] Additionally, the method further includes a trenching process performed using a single beam at the edge of the scribe line area of ​​the substrate prior to the laser grooving process, and the laser grooving process may be performed at the center of the scribe line area after the trenching process is performed.

[0013] In addition, the laser wavelength of the laser beam deflection system may have a range of 100 nm to 1500 nm.

[0014] Additionally, the step of forming the protective film may include the step of setting a center point of the substrate, the step of cleaning the substrate, the step of applying a protective material on the substrate through a coating process, the step of heating and curing the protective material, and the step of cooling the protective material to form the protective film.

[0015] In addition, the protective film may be configured so that the wiring layer is not exposed outside the scribe line area during the laser grooving process and the dicing process.

[0016] Additionally, the dicing process may include the steps of: removing at least a portion of the exposed substrate by performing an isotropic etching process using the protective film as an etching mask; forming a protective film layer covering the protective film and the exposed substrate by performing a deposition process; and removing the protective film layer and the substrate in the thickness direction through an anisotropic etching process.

[0017] A substrate cutting method can be provided that prevents defects caused by by-products of the laser grooving process by using a protective film and improves process difficulty or productivity by using it as an etching mask for the dicing process.

[0018] A substrate cutting method with improved productivity or reliability can be provided by performing a laser grooving process using a laser beam deflection system.

[0019] The various and beneficial advantages and effects of the present invention are not limited to those described above and will be more easily understood in the process of explaining specific embodiments of the present invention.

[0020] FIG. 1 is a schematic flowchart illustrating a substrate cutting method according to exemplary embodiments.

[0021] FIGS. 2a, FIGS. 3, FIGS. 4, and FIGS. 5 are cross-sectional views illustrating the step-by-step appearance of a substrate cutting method according to exemplary embodiments.

[0022] FIG. 2b is a schematic flowchart illustrating a method for forming a protective film according to exemplary embodiments.

[0023] FIG. 6 is a block diagram schematically illustrating the configuration of a laser beam deflection system according to exemplary embodiments.

[0024] FIGS. 7 to 9 are drawings for explaining the operating principles and effects of a laser beam deflection system according to exemplary embodiments.

[0025] FIG. 10 is a drawing for illustrating a substrate cutting method according to exemplary embodiments.

[0026] Hereinafter, exemplary embodiments according to the present invention will be described in detail with reference to the contents described in the attached drawings. However, the present invention is not limited or restricted by exemplary embodiments. Unless otherwise defined, all terms used in this specification (including technical and scientific terms) shall be used in a meaning that is commonly understood by those skilled in the art to which this disclosure belongs, but this may vary depending on the intent of those skilled in the art, case law, the emergence of new technology, etc.

[0027] Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise. In certain cases, terms have been selected at the applicant's discretion, and in such cases, their meanings will be described in detail in the relevant explanatory sections. Accordingly, terms used in this disclosure should be defined not merely by their names, but based on their meanings and the content throughout this disclosure.

[0028] Throughout this specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Furthermore, the singular form used in this specification includes the plural form unless specifically stated otherwise. Additionally, the expression "at least one of a, b, and / or c" as used throughout this specification may encompass 'a alone', 'b alone', 'c alone', 'a and b', 'a and c', 'b and c', or 'a, b, and c all'.

[0029] Meanwhile, terms such as "first and / or second" used in this specification may be used to describe various components, but they are used solely for the purpose of distinguishing one component from another and are not intended to limit the scope to the components referred to by such terms. For example, without departing from the scope of the present invention, the first component may be named the second component, and the second component may also be named the first component.

[0030] Additionally, terms such as “…part,” “…module,” etc., as described in this specification refer to a unit that processes at least one function or operation, which may be implemented in hardware or software, or a combination of hardware and software. Furthermore, embodiments of this disclosure may be represented in this specification by functional block configurations and various processing steps. These functional blocks may be implemented by various numbers of hardware and / or software configurations that execute specific functions. For example, embodiments of this disclosure may employ integrated circuit configurations such as memory, processing, logic, look-up tables, etc., which can execute various functions under the control of one or more microprocessors or other control devices.

[0031] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In describing the embodiments, technical details that are well known in the art to which the present invention pertains and are not directly related to the present invention will be omitted. This is to ensure that the essence of the present invention is conveyed more clearly without obscuring it by omitting unnecessary explanations. For the same reason, some components in the accompanying drawings may be exaggerated, omitted, or schematically depicted. Furthermore, the size of each component does not entirely reflect its actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding components.

[0032]

[0033] FIG. 1 is a schematic flowchart for explaining a substrate cutting method (S100) according to exemplary embodiments. FIG. 2a, FIG. 3, FIG. 4, and FIG. 5 are cross-sectional views for explaining the step-by-step appearance of the substrate cutting method. FIG. 2a, FIG. 3, FIG. 4, and FIG. 5 illustrate a substrate (WR) being cut in the thickness direction. FIG. 2b is a schematic flowchart for explaining a method for forming a protective film (LPL) according to exemplary embodiments.

[0034]

[0035] Referring to FIGS. 1, 2a, and 2b, a protective film (LPL) can be formed on a substrate (WR) comprising a substrate (10) and a wiring layer (20). (S110)

[0036] The substrate (WR) may be a substrate for semiconductor manufacturing and may be referred to as a wafer. The substrate (WR) may include a plurality of main regions (or chip regions) (MR) and scribe line regions (SL). The plurality of main regions (MR) are regions that function as individual semiconductor chips and may be separated from one another by scribe line regions (SL). The scribe line regions (SL) may be regions for separating each semiconductor chip by cutting the substrate (WR) during a dicing process after the manufacturing process of the main regions (MR) on the substrate (WR) is completed. The scribe line regions (SL) may include a margin region that accounts for process error.

[0037] A substrate (10) may include a base substrate (11) and a through-via (12) penetrating the base substrate (11). The base substrate (11) may include a semiconductor element such as silicon or germanium, or a compound semiconductor such as SiC (silicon carbide), GaAs (gallium arsenide), InAs (indium arsenide), and InP (indium phosphide). The through-via (12) may be a through silicon via (TSV) penetrating the base substrate (11) in the thickness direction. The through-via (12) is a conductive via that provides an electrical path between the upper and lower parts of the substrate (10) and may include, for example, tungsten (W), titanium (Ti), aluminum (Al), or copper (Cu). However, the through-via (12) may be omitted depending on the type of semiconductor chip.

[0038] A wiring layer (20) may be disposed on one side of a substrate (10). The wiring layer (20) may include an insulating member (21), a plurality of wiring patterns (22) within the insulating member (21), and a plurality of vias (23) connecting the plurality of wiring patterns (22). Each of the plurality of wiring patterns (22) may be a power wiring, a ground wiring, a signal wiring, etc., and the number of layers of the plurality of wiring patterns (22) may be varied and not limited to the number shown in the drawing. The plurality of vias (23) may connect wiring patterns (22) of another layer within the insulating member (21). The insulating member (21) may be an insulating layer covering the plurality of wiring patterns (22) and the plurality of vias (23). The insulating member (21) may include silicon oxide or silicon nitride.

[0039] In an exemplary embodiment, the substrate (WR) may further include a conductive pad (not shown) exposed on the wiring layer (20) and a connecting member (not shown) connected to the conductive pad (e.g., solder ball, copper pillar, etc.). The connecting member may be formed before the formation of the protective film (LPL) as shown in FIG. 8, but is not limited thereto and may be additionally formed after the dicing process.

[0040]

[0041] Referring to FIG. 2b, the center point of the substrate (WR) can be set. (S111) The center point of the substrate (WR) can be set in the depth direction. The center point may be the rotation axis of the substrate (WR). After placing the substrate (WR) on a specific jig or fixing the substrate (WR) through a clamp, the center point of the substrate (WR) can be aligned by moving the substrate (WR) or the process equipment, taking into account the positional relationship with the process equipment.

[0042] Next, a cleaning agent can be sprayed onto the substrate (WR) to clean the substrate (WR). (S112) The surface of the substrate (WR) on which the cleaning agent is sprayed may be the surface on which the wiring layer (20) is placed. By spraying the cleaning agent from a nozzle spaced apart from the substrate (WR) on the substrate (WR) which rotates around the center point, contaminants on the substrate (WR) can be removed and the quality of the subsequent coating process can be improved. In an exemplary embodiment, the nozzle may start spraying from a position aligned with the center point and spray the cleaning agent while moving in a straight line away from the center point.

[0043] Next, a protective material can be applied to the substrate (WR) through a coating process. (S113) The coating process can be performed by applying the protective material onto a rotating substrate (WR). The protective material may include an insulating material, for example, a water-soluble resin. By performing a cleaning process beforehand, the protective material can be applied uniformly onto the substrate (WR).

[0044] Next, a heating and cooling process can be performed to form a protective film (LPL) on the wiring layer (20). (S114)

[0045] A heating process can be performed on the protective material applied on the wiring layer (20) to cure the protective material. In one embodiment, the heating process can be performed by contacting a heating plate to one side of a base substrate (11) on which the wiring layer (20) is not placed and heating the heating plate. In another embodiment, the heating process can be performed non-contactually, for example, by fixing the substrate (WR) with a lift pin and heating the heating plate while spaced apart from the substrate (WR). For example, the non-contact heating process can be performed to prevent damage to the fixing film when the substrate (WR) is fixed by a ring frame and a fixing film.

[0046] By performing a cooling process after a heating process, the structure of the protective material can be stabilized to form a protective film (LPL). The protective film (LPL) is configured so that the upper surface of the substrate (WR) or the wiring layer (20) is not exposed during the laser grooving process and the dicing process, as described below, thereby protecting the wiring layer (20).

[0047]

[0048] Referring to FIGS. 1 and 3, a laser grooving process can be performed to remove at least a portion of the wiring layer (20) and expose the substrate (10). (S120)

[0049] The above laser grooving process may be a process of exposing the substrate (10) by removing the wiring layer (20) and the protective film (LPL) on the scribe line area (SL) of the substrate (WR). The wiring layer (20) on the scribe line area (SL) may not include a plurality of wiring patterns (22) and a plurality of vias (23). By performing the above laser grooving process, the insulating member (21) made of an inorganic material can be removed without damage such as cracks. In this case, by the protective film (LPL) on the wiring layer (20), by-products generated as the insulating member (21), etc. is removed may be prevented from coming into contact with the upper surface of the adjacent wiring layer (20). Accordingly, a semiconductor chip with high productivity and reliability can be provided by separating the plurality of wiring patterns (22), a plurality of vias (23), a conductive pad (not shown), a connecting member (not shown), etc. from the by-products.

[0050] The above laser grooving process can be performed by a laser beam deflection system, which will be described later in FIGS. 6 to 10.

[0051]

[0052] Referring to FIGS. 1 and FIGS. 4, the exposed substrate (10) can be cut by performing a dicing process. (S130)

[0053] The above dicing process may be a process of separating multiple main regions (MR) of a substrate (WR) by cutting the substrate (WR) through removing the substrate (10) of the scribe line region (SL) exposed by the above laser grooving process. The dicing process may be performed through a plasma etching process. In this case, by using a protective film (LPL) as an etching mask for the etching process, dicing can be performed without forming a separate mask pattern. That is, by producing a semiconductor chip without adding a separate process step, a semiconductor chip with improved productivity can be provided.

[0054] For example, the dicing process may include the steps of removing at least a portion of the exposed substrate (10) by performing an isotropic etching process using a protective film (LPL) as an etching mask, forming a protective film layer covering the protective film (LPL) and the exposed substrate (10) by performing a deposition process, and removing the protective film layer and the substrate (10) on the scribe line region (SL) by performing an anisotropic etching process. In this case, the isotropic etching process and the deposition process may be performed at least once.

[0055]

[0056] Referring to FIGS. 1 and FIGS. 5, the protective film (LPL) can be removed. (S140)

[0057] The protective film (LPL) remaining on the main area (MR) can be selectively removed from the substrate (10) and the wiring layer (20). By-products generated by the laser grooving process or the dicing process can also be cleaned together with the protective film (LPL). The protective film (LPL) can be removed, for example, by performing a cleaning process using water (H2O).

[0058] Accordingly, multiple semiconductor chips can be formed that are spaced apart from each other and have exposed input / output terminals.

[0059]

[0060] FIG. 6 is a block diagram schematically illustrating the configuration of a laser beam deflection system according to exemplary embodiments.

[0061] Referring to FIG. 6, the laser beam deflection system (1000) may include a laser device (100), a stage (200), and a control unit (300).

[0062] The laser device (100) may be a device that transmits a deflected beam in a specific direction. In an exemplary embodiment, the laser device (100) may include a laser emitter (110) that emits a laser light source, an acousto-optic deflector (120) that deflects the emitted laser light source at various angles to generate a deflected beam of the laser light source, and a scanner (130) that irradiates the deflected beam in a specific direction.

[0063] The laser output unit (110) can emit a light source having a short pulse width in the picosecond or femtosecond range. By using a light source with a relatively short pulse width, a laser device (100) capable of preventing damage to the workpiece or performing micro-processing can be provided by having a short interaction time with the workpiece (e.g., the wiring layer of FIG. 2a). However, this is merely illustrative and the technical concept of the present disclosure is not limited thereto, and the laser output unit (110) can emit a light source having various pulse widths, such as nanoseconds.

[0064] The light source emitted from the laser emitter (110) may have a wavelength of, for example, about 100 nm to 1500 nm and a frequency of about 10 Hz to 10000 Hz.

[0065] An acousto-optic deflector (120, Acousto-Optic Deflector; AOD) can diffract a beam emitted from a laser emitter (110) to generate a deflected beam having multiple paths. The acousto-optic deflector (120) can form a deflected beam by controlling the angle between the incident beam and the diffracted beam (hereinafter, deflection angle) or the power of the deflected beam by appropriately controlling the intensity of the sound wave or the acoustic frequency according to an RF signal (Radio Frequency Signal). In this case, the control unit (300) can control the RF signal or the movement of the acousto-optic deflector (120) to rapidly change the irradiation position of the deflected beam, thereby preventing thermal damage to the workpiece and enabling uniform deflected beam performance. However, according to the embodiment, in the laser device (100), the acousto-optic deflector (120) may be omitted and a deflected beam may be generated using a diffractive optical element.

[0066] The scanner (130) can direct the deflection beam toward the stage (200). The control unit (300) can control the movement of the scanner (130) to rapidly change the irradiation position of the deflection beam, thereby preventing thermal damage to the workpiece and enabling uniform deflection beam performance.

[0067] The stage (200) may be a structure on which a workpiece, for example, the substrate (WR) of FIG. 2a, is placed and supported. The substrate (WR) may move by the movement of the stage (200) while in contact with the stage (200). The movement of the stage (200) may be controlled by a control unit (300).

[0068] The control unit (300) can control the movement of at least one of the acousto-optic deflector (120), the scanner (130), or the stage (200). In the present disclosure, the technology for controlling the movement of at least one of the acousto-optic deflector (120), the scanner (130), or the stage (200) may be referred to as Motion On the Fly (MOFT) technology. The laser grooving process of FIG. 1 can be performed by the control unit (300) while a deflected beam is irradiated in a specific direction.

[0069]

[0070] FIGS. 7 to 9 are drawings for explaining the operating principles and effects of a laser beam deflection system according to exemplary embodiments. FIG. 7 is a drawing for explaining the operating principle of forming a deflection beam in a laser beam deflection system (1000), FIG. 8 is a drawing for explaining the operating principle of a deflection beam irradiated on a substrate (WR), and FIG. 9 is a drawing for explaining the effects of a laser beam deflection system.

[0071]

[0072] Referring to FIG. 7, the laser beam deflection system (1000) can perform interval processing by using an acousto-optic deflector (120) to adjust the diffraction angle of the light source in a short time. That is, by rapidly changing the diffraction angle of the acousto-optic deflector (120) by the control unit (300, see FIG. 6), interval processing can be performed in which a deflected beam is irradiated onto multiple spaced spots on the workpiece. Accordingly, thermal damage to the workpiece can be minimized. However, if the change in the diffraction angle of the acousto-optic deflector (120) is small, the deflected beam may be irradiated in an overlapping form with multiple spots that are not spaced apart.

[0073] Additionally, the laser beam deflection system (1000) can control the position where the deflection beam is irradiated using a scanner (130) or a stage (200). In an exemplary embodiment, the deflection beam can be irradiated in a specific direction by controlling the movement of the scanner (130) or the stage (200), such as adjusting the angle of the scanner (130) (e.g., an internal mirror) or moving the stage (200) in a specific direction while the light source is being emitted from the laser emitter (110). For example, the control unit (300) can control the position where the deflection beam is irradiated by controlling the scanner (130) at or below a first reference value based on the operating range, and control the stage at or above the first reference value and below a second reference value to control the position where the deflection beam is irradiated. However, alternatively, the control unit (300) may control the scanner (130) and the stage (200) independently or control the scanner (130) and the stage (200) to move simultaneously.

[0074]

[0075] Referring to FIG. 8, a laser grooving process can be performed to remove a protective film (LPL) and a wiring layer (20) using a laser device (100) of a laser beam deflection system (1000). In this case, the laser device (100) can remove the wiring layer (20) within the scribe line area (SL) of the substrate (WR). The laser device (100) can irradiate a deflection beam (DB) in the width direction (SLw) of the scribe line area (SL). In an exemplary embodiment, irradiation of the deflection beam (DB) in the width direction (SLw) can be performed by controlling the movement of an acousto-optic deflector (120, see FIG. 8). The laser device (100) can irradiate a deflection beam (DB) in the length direction (SLl) of the scribe line area (SL). In an exemplary embodiment, a deflected beam (DB) irradiation in the longitudinal direction (SL) can be performed by controlling the movement of the scanner (130) or the stage (200, see FIG. 8). However, the deflected beam (DB) can remove the protective film (LPL) and wiring layer (20) of the scribe line area (SL) by controlling the movement of the laser device (100) or the stage (200) in various ways by the control unit (300, see FIG. 7).

[0076]

[0077] Referring to FIG. 9, the laser beam deflection system (1000) can provide a semiconductor chip with improved productivity by using a short laser pulse width to apply relatively small energy to the workpiece, thereby minimizing overall thermal damage and minimizing the generation of by-products. In this case, the workpiece can be removed from a relatively small unit area to a relatively deep range. Therefore, damage to the processing surface of a specific range of the workpiece can be minimized by moving an acousto-optic deflector, scanner, or stage, etc., so that the light source does not remain within a specific range of the workpiece for a long time.

[0078] In addition, the size of the Heat Affected Zone (HAZ) can be minimized by controlling a light source with a short pulse width with high-speed movement. That is, by using a laser device (100, see FIG. 8) that implements a deflected beam and MOTF technology, thermal damage to the wiring structure of the wiring layer (20) in the main area (MR, see FIG. 2a) can be minimized and the process speed increased, thereby providing a semiconductor chip with improved productivity and reliability.

[0079]

[0080] FIG. 10 is a drawing for illustrating a substrate cutting method according to exemplary embodiments.

[0081] Referring to FIG. 10, a trench process using a single beam (SB) may be performed prior to the step (S120) of performing the laser grooving process of FIG. 1.

[0082] The above trench process may be a process of removing the wiring layer (20) and the protective film (LDL) of the edge region (SL_ER) of the scribe line region (SL_CR, SL_ER) using a single beam (SB). In this case, both sides of a single scribe line region may be removed sequentially by processing with a single beam (SB), and depending on the embodiments, they may also be removed by processing with a single beam from two light sources simultaneously. The above trench process may be performed before the laser grooving process to prevent cracking or by-products in the scribe line region.

[0083] Next, the laser grooving process can be performed in the center area (SL_CR) of the scribe line area. In this case, as described above, by performing the process using a deflection beam (DB), thermal damage caused by processing the center area (SL_CR) with a single beam can be prevented.

[0084]

[0085] The present invention is not limited by the embodiments described above and the attached drawings, but is intended to be limited by the appended claims. Accordingly, within the scope of the technical concept of the present invention as described in the claims, various substitutions, modifications, changes, and combinations of embodiments may be made by those skilled in the art without departing from the technical spirit of the present invention, and such are also to be considered to fall within the scope of the present invention.

Claims

1. A step of forming a protective film on a substrate including a substrate and a wiring layer; A step of performing a laser grooving process to remove at least a portion of the wiring layer and expose the substrate; A step of cutting the exposed substrate by performing a dicing process; and The step of removing the above protective film is included, The above laser grooving process is a substrate cutting method performed by a laser beam deflection system.

2. In Paragraph 1, The above laser beam deflection system is, Laser emitter; An acousto-optic deflector that diffracts a beam emitted from the above laser emitter to form a deflected beam having multiple paths; and A substrate cutting method comprising a scanner that directs the deflection beam toward a stage on which the substrate is placed.

3. In Paragraph 2, The above laser beam deflection system further includes a control unit, and The above control unit controls the movement of at least one of the acousto-optic deflector, the scanner, or the stage, and The above laser grooving process is a substrate cutting method in which the deflection beam is irradiated at a specific location by the control unit.

4. In Paragraph 3, The above control unit, based on the operating range, At a first reference value or lower, the scanner is controlled to control the position where the deflection beam is irradiated, and A substrate cutting method that controls the position where the deflection beam is irradiated by controlling the stage in the above range exceeding the first reference value and below the second reference value.

5. In Paragraph 3, The above control unit The movement of the above-mentioned acousto-optic deflector is controlled to irradiate a deflected beam in the width direction of the scribe line area of ​​the substrate, and A substrate cutting method that controls the movement of the scanner to irradiate the deflection beam in the longitudinal direction of the scribe line area.

6. In Paragraph 1, It further includes a trench process performed using a single beam in the edge region of the scribe line area of ​​the substrate prior to the laser grooving process, and The above laser grooving process is a substrate cutting method performed in the central area of ​​the above scribe line area after performing the above trench process.

7. In Paragraph 1, A method for cutting a substrate in which the laser wavelength of the above laser beam deflection system has a range of 100 nm to 1500 nm.

8. In Paragraph 1, The step of forming the above protective film is, Step of setting the center point of the above substrate; A step of cleaning the above substrate; A step of applying a protective material onto the substrate through a coating process; A step of heating and curing the above protective material; and A substrate cutting method comprising the step of cooling the protective material to form the protective film.

9. In Paragraph 1, A substrate cutting method in which the above protective film is configured so that the wiring layer is not exposed outside the scribe line area while the above laser grooving process and the above dicing process are performed.

10. In Paragraph 1, The above dicing process is A step of removing at least a portion of the exposed substrate by performing an isotropic etching process using the protective film as an etching mask; A step of performing a deposition process to form a protective film layer covering the protective film and the exposed substrate; and A substrate cutting method comprising the step of removing the protective film layer and the substrate in the thickness direction through an anisotropic etching process.

Images