Chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of uniformly maintaining the thickness of a thin film by adjusting the growth rate of the thin film at the center and edge of a rotating substrate when supplying a process gas toward the substrate.

Description

Chemical Vapor Deposition System

[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of maintaining a uniform thickness of a thin film by controlling the growth rate of the thin film at the center and edge of the substrate when a horizontal process gas is supplied toward a rotating substrate.

[0002] Generally, a chemical vapor deposition apparatus divides a processing space for a substrate inside a chamber, and various processes are carried out on the substrate in said processing space.

[0003] For example, a process gas or the like can be supplied from the side of the processing space by a gas supply unit to induce a laminar flow of gas along the horizontal direction inside the processing space, thereby allowing a thin film to be grown on the upper surface of a rotating substrate.

[0004] In this case, when process gas is supplied horizontally toward the substrate, it is necessary to control the growth rate of the thin film growing on the center and edges of the substrate, and furthermore, it is necessary to maintain the thickness of the thin film on the substrate uniformly.

[0005] The present invention aims to provide a chemical vapor deposition apparatus capable of maintaining a uniform thickness of a thin film by controlling the growth rate of the thin film at the center and edges of the substrate when a horizontal process gas is supplied toward a rotating substrate, in order to solve the above-mentioned problems.

[0006] The objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus comprising: a chamber; a susceptor provided inside the chamber on which a substrate is placed and which heats the substrate; an upper cover provided inside the chamber and above the susceptor, which provides a processing space between the susceptor and the upper cover for processing the substrate; and a guide plate assembly for supplying process gas toward the processing space of the chamber, wherein the guide plate assembly comprises a plurality of guide plates arranged along a vertical direction, and the process gas is supplied through a supply space between the plurality of guide plates, and at least one of the plurality of supply spaces includes one or more vertical partitions so that the supply space is partitioned along a horizontal direction.

[0007] Here, the supply space may be composed of a first space located at the top and supplying a first carrier gas, a second space located below the first space and supplying a process gas, and a third space located at the bottom and supplying a second carrier gas.

[0008] In addition, the vertical partition is provided in the second space and the third space, and can divide the second space and the third space into a plurality of spaces.

[0009] In this case, the second space may be divided into a second central space and a pair of second side spaces arranged on both sides of the second central space, and the third space may be divided into a third central space and a pair of third side spaces arranged on both sides of the third central space.

[0010] Furthermore, the second central space may be equal to the diameter of the substrate.

[0011] In addition, the width of the second central space may be larger than the width of the second side space, and the width of the third central space may be larger than the width of the third side space.

[0012] Meanwhile, the flow rate, velocity, or concentration of the gas supplied to the plurality of divided spaces can be individually controlled.

[0013] In addition, at least one of the plurality of guide plates may be positioned at an angle toward the substrate.

[0014] In this case, the angle of inclination of the top plate positioned at the uppermost among the plurality of guide plates is the largest, and the angle of inclination of the guide plates may decrease as they go downwards.

[0015] Meanwhile, the objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus comprising: an outer chamber; an inner chamber provided inside the outer chamber; a susceptor provided inside the inner chamber on which a substrate is placed and which heats the substrate; an upper cover provided inside the inner chamber and above the susceptor, which provides a processing space between the susceptor and the upper cover for processing the substrate; and a guide plate assembly for supplying process gas toward the processing space of the inner chamber, wherein the guide plate assembly comprises a plurality of guide plates arranged along a vertical direction, and the process gas is supplied through a supply space between the plurality of guide plates, and at least one of the plurality of supply spaces includes one or more vertical partitions so that the supply space is partitioned along a horizontal direction.

[0016] Here, the supply space may be composed of a first space located at the top and supplying a first carrier gas, a second space located below the first space and supplying a process gas, and a third space located at the bottom and supplying a second carrier gas.

[0017] In addition, the vertical partition is provided in the second space and the third space, and can divide the second space and the third space into a plurality of spaces.

[0018] According to the present invention having the above-described configuration, in the configuration of a gas supply unit that supplies process gas toward a substrate, the growth rate of a thin film or the thickness of a thin film can be controlled by individually controlling the flow rate, flow velocity, or concentration of the gas supplied toward the center and the edge of the substrate, respectively.

[0019] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention,

[0020] FIG. 2 is a front view of the guide plate assembly viewed from the inner chamber side.

[0021] FIG. 3 is a plan view illustrating a guide plate assembly and a substrate on a susceptor.

[0022] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0023] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0024] Referring to FIG. 1, the chemical vapor deposition apparatus (1000) may be provided with an inner chamber (300) (hereinafter referred to as 'chamber (300)'), a susceptor (320) provided inside the chamber (300) on which the substrate (W) is placed and which heats the substrate (W), an upper cover (310) provided inside the chamber (300) and above the susceptor (320) and which provides a processing space (312) in which the substrate (W) is processed between the susceptor (320) and the upper cover (310), and a guide plate assembly (220) that supplies process gas toward the processing space (312) of the chamber (300).

[0025] The chemical vapor deposition apparatus (1000) may be equipped with an external chamber (100). Various components may be provided in the external chamber (100).

[0026] A receiving space (110) is provided on the inner side of the outer chamber (100), and the chamber (300) may be provided in the receiving space (110).

[0027] A gas supply unit (200) may be connected to one side of the above-mentioned external chamber (100). The gas supply unit (200) may serve to supply various process gases and purge gases toward the processing space (312).

[0028] The above gas supply unit (200) can supply various process gases, including precursor gas and dopant gas, and / or carrier gas, etc., toward the processing space (312) of the above-described chamber (300).

[0029] For example, a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention may be configured as an apparatus for epitaxial growth of silicon carbide (SiC) to manufacture a power semiconductor, and the precursor gas may be a Si-based gas such as dichlorosilane (SiH2Cl2), monosilane (SiH4), trichlorosilane (SiHCl3), or silicon tetrachloride (SiCl4), and propane (C3H8), methane (CH4), ethylene (C2H4), or acetylene (C2H2). In addition, nitrogen (N2) or ammonia (NH3) may be used as the dopant gas, and hydrogen (H2) may be used as the carrier gas.

[0030] Meanwhile, the gas supply unit (200) may be equipped with a plurality of supply ports (212) connected to an external gas supply source (not shown) and a guide plate assembly (220) that supplies gas supplied through the supply ports (212) to the processing space (312).

[0031] The supply port (212) can be connected to a gas box (210) provided in the outer chamber (100). The gas box (210) can be connected to the guide plate assembly (220).

[0032] The guide plate assembly (220) comprises a plurality of guide plates (222A, 222B, 222C, 222D) spaced apart along the vertical direction, and process gas, etc. can be supplied through supply spaces (252, 254, 256) (see FIG. 2) between the plurality of guide plates (222A, 222B, 222C, 222D). Additionally, at least one of the plurality of supply spaces (252, 254, 256) may include one or more vertical partitions (232, 234, 242, 244) so ​​that the supply spaces (252, 254, 256) may be partitioned along the horizontal direction. This will be examined in detail later.

[0033] For reference, the vertical bulkheads (232, 234, 242, 244) may be configured to extend from the front end to the rear end along the longitudinal direction of the guide plates (222A, 222B, 222C, 222D).

[0034] Meanwhile, the number of the guide plates (222A, 222B, 222C, 222D) is not specifically limited. For example, as shown in the drawing, there may be four, or there may be fewer or more than four. Below, we will examine the case where the guide plates (222A, 222B, 222C, 222D) are composed of four.

[0035] The plurality of guide plates (222A, 222B, 222C, 222D) may be stacked and arranged along a direction perpendicular to the substrate (W). The guide plates (222A, 222B, 222C, 222D) may include an uppermost plate (222A) located at the top and a lowermost plate (222D) located at the bottom.

[0036] Additionally, a first intermediate plate (222B) and a second intermediate plate (222C) may be provided between the uppermost plate (222A) and the lowermost plate (222D). The first intermediate plate (222B) may be positioned above the second intermediate plate (222C).

[0037] In this case, at least some of the plurality of guide plates (222A, 222B, 222C, 222D) may be positioned inclined toward the substrate (W).

[0038] For example, among the plurality of guide plates (222A, 222B, 222C, 222D), the uppermost plate (222A) may have the largest inclination angle, and the guide plates (222B, 222C, 222D) may be arranged so that their inclination angles decrease as they go downward.

[0039] Additionally, the bottom plate (222D) can be positioned horizontally with respect to the substrate (W) without being inclined.

[0040] When the guide plates (222A, 222B, 222C, 222D) are arranged at an angle, the gas supplied between the plurality of guide plates (222A, 222B, 222C, 222D) is supplied toward the substrate (W) in a laminar flow, and can contribute to the growth of a thin film in different regions or locations of the substrate (W).

[0041] Meanwhile, a chamber (300) may be provided inside the outer chamber (100), and a processing space (312) for the substrate (W) may be provided inside the chamber (300). By adopting a so-called double chamber structure in this way, the possibility of particle contamination on the substrate (W) can be reduced, and the process on the substrate (W) can be carried out more smoothly.

[0042] Additionally, a gas inlet pipe (360) connected to the gas supply unit (200) may be provided on one side of the chamber (300). For example, the aforementioned guide plate assembly (220) may be connected to the gas inlet pipe (360), and process gas, etc., may be supplied through the gas inlet pipe (360). Alternatively, although not shown in the drawing, a configuration in which the guide plate assembly (220) is directly connected to one side of the chamber (300) is also possible.

[0043] Meanwhile, the chamber (300) can serve as a thermal insulation member. That is, the chamber (300) is positioned to surround the susceptor assembly (330) described later and may be composed of carbon felt or graphite felt, etc. Alternatively, the chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, etc.

[0044] In this way, when the chamber (300) or the heat-blocking member is provided, the heat generated by the heater (340) of the susceptor assembly (330) is not radiated to the outside of the chamber (300), thereby allowing the processing space (312) to be heated more effectively.

[0045] Specifically, a satellite (326) on which the substrate (W) is placed is placed inside the chamber (300), and a susceptor assembly (330) for heating the substrate (W) and an upper cover (310) provided on the upper part of the susceptor assembly (330) inside the chamber (300) and providing a processing space between the susceptor assembly (330) and the upper cover (310) for processing the substrate (W) may be provided.

[0046] Additionally, the susceptor assembly (330) may be provided with a body portion (322) on which a satellite (326) on which the substrate (W) is placed is placed, a susceptor (320) having a protrusion (324) protruding downward from the body portion (322), and a heater (340) for heating the susceptor (320). A cover (350) surrounding the satellite (326) may be provided on the upper surface of the body portion (322). Additionally, although not shown in the drawing, a configuration is also possible in which a concave portion is formed on the upper surface of the body portion (322) and the satellite (326) is inserted into the concave portion.

[0047] The processing space (312) can be provided between the upper cover (310) and the susceptor (320).

[0048] As described above, the susceptor (320) may have a body portion (322) and a protrusion (324) formed by protruding downward from the body portion (322), and a satellite (326) on which the substrate (W) is seated may be seated on the upper surface of the body portion (322).

[0049] Meanwhile, when the satellite (326) is seated on the upper surface of the body part (322), the satellite (326) may be rotatably provided with respect to the susceptor (320).

[0050] That is, a gas passage (not shown) may be further provided that penetrates the protrusion (324) or the body part (322) and connects to the upper surface of the body part (322) adjacent to the lower surface of the satellite (326). Floating gas, etc., can be supplied toward the lower surface of the satellite (326) through the gas passage to rotate the satellite (326).

[0051] During the process on the substrate (W), the substrate (W) can be rotated so that the process gas supplied from the side reacts uniformly on the entire surface of the substrate (W).

[0052] Meanwhile, a gas exhaust pipe (400) for exhausting gas from the processing space (312) may be connected to the other side of the chamber (300). The gas exhaust pipe (400) may extend to the outside of the outer chamber (100) to exhaust gas from the processing space (312) to the outside of the outer chamber (100).

[0053] Additionally, the chamber (300) may be equipped with a heater (340) for heating the substrate (W) and the processing space (312) to a process temperature. The heater (340) may be provided at the bottom of the susceptor (320) and may be composed of an induction heating coil.

[0054] If the heater (340) is configured as an induction heating coil, it can be used semi-permanently after installation, thus having advantages in terms of maintenance and equipment operation costs.

[0055] The chemical vapor deposition apparatus (1000) according to the present invention may be an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), and by supplying process gas, etc. from the side of the processing space (312) by the gas supply unit (200), a laminar flow of gas may be induced along the horizontal direction inside the processing space (312) to grow a single crystal of silicon carbide (SiC) on the upper surface of the substrate (W).

[0056] As described above, when a silicon carbide (SiC) film is deposited on the upper surface of the substrate (W), the process temperature may correspond to a high temperature of approximately 1600 degrees or higher. Accordingly, the upper cover (310), susceptor (320), and cover (350) constituting the processing space (312) can use graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide material produced by CVD sintering to increase thermal stability and thermal conductivity, thereby efficiently heating the substrate and reducing power consumption.

[0057] Meanwhile, when the process gas is supplied horizontally toward the substrate (W), it is necessary to control the growth rate of the thin film growing on the substrate (W), and furthermore, it is necessary to maintain the thickness of the thin film on the substrate (W) uniformly.

[0058] To this end, it is necessary to control the flow rate or velocity of the process gas at the center and edge of the substrate (W). In the present invention, at least one vertical partition (232, 234, 242, 244) is provided in at least one of the plurality of supply spaces to partition the supply space along the horizontal direction. Below, this will be examined in more detail with reference to the drawings.

[0059] FIG. 2 is a front view of the guide plate assembly (220) viewed from the chamber (300), and FIG. 3 is a plan view showing the guide plate assembly (220) and the substrate (W) on the susceptor (320). In FIG. 3, only the second supply space (254) in the guide plate assembly (220) is shown.

[0060] Referring to FIGS. 2 and 3, the guide plate assembly (220) may have a plurality of guide plates (222A, 222B, 222C, 222D) spaced apart along the vertical direction as described above. In this case, the plurality of guide plates (222A, 222B, 222C, 222D) may be positioned between a pair of side walls (223).

[0061] Each space between the plurality of guide plates (222A, 222B, 222C, 222D) forms a supply space (252, 254, 256), and process gas, etc. can be supplied toward the substrate (W) through the supply space (252, 254, 256). The number of the plurality of guide plates (222A, 222B, 222C, 222D) and the number of the plurality of supply spaces (252, 254, 256) are described as examples, and it is possible to have fewer than 3 or to have 4 or more.

[0062] The above-mentioned plurality of supply spaces (252, 254, 256) are each individually connected to the aforementioned supply port (212) so that necessary process gas, etc. can be supplied. By this structure, pre-mixing of the gas can be prevented, thereby preventing parasitic reactions before reaching the substrate (W).

[0063] Additionally, the heights of the supply spaces (252, 254, 256) may all be the same, but this is merely an example, and at least one of the plurality of supply spaces (252, 254, 256) may be set to a different height.

[0064] Meanwhile, the plurality of supply spaces (252, 254, 256) may be composed of a first space (252) located at the top and supplying a first carrier gas, a second space (254) located below the first space (252) and supplying a process gas, and a third space (256) located at the bottom and supplying a second carrier gas.

[0065] In this case, the first carrier gas can be supplied through the first space (252) located at the top of the guide plate assembly (220). The first carrier gas may be composed of, for example, hydrogen (H2), but is not limited thereto.

[0066] The first carrier gas supplied through the first space (252) can press the process gas supplied through the second space (254) toward the substrate (W) so that it is directed toward the substrate (W).

[0067] Meanwhile, process gas for forming a thin film of the substrate (W) can be supplied through the second space (254) located in the middle along the vertical direction in the guide plate assembly (220).

[0068] Additionally, a second carrier gas may be supplied through the third space (256) located at the bottom of the guide plate assembly (220). The second carrier gas may be the same as the first carrier gas described above, or may be composed of a different gas.

[0069] The second carrier gas supplied through the third space (256) acts to push the process gas supplied through the second space (254) toward the substrate (W), thereby allowing the process gas to be supplied more uniformly over a longer distance.

[0070] Meanwhile, in the above configuration, a vertical partition (232, 234, 242, 244) may be provided in at least one of the plurality of supply spaces (252, 254, 256). In this embodiment, a vertical partition (232, 234, 242, 244) is provided in the second space (254) and the third space (256), and the second space (254) and the third space (256) are divided into a plurality of spaces by the vertical partition (232, 234, 242, 244), but is not limited thereto.

[0071] For example, the first vertical partition (232, 234) provided in the second space (254) may be arranged in a vertical direction to connect the second guide plate (222B) and the third guide plate (222C) to each other. The number of the first vertical partition (232, 234) is not specifically limited, and in the case of this embodiment, it is described as being two.

[0072] Looking at the second space (254), the second space (254) can be divided into three partitioned spaces (254A, 254B, 254C) by the first vertical partition (232, 234). For example, the second space (254) can be divided into a second central space (254A) and a pair of second side spaces (254B, 254C) positioned on both sides of the second central space (254A).

[0073] In this case, the widths of the second central space (254A) and the second side spaces (254B, 254C) may be the same as each other, or they may be different as shown in the drawing.

[0074] In the case of this embodiment, the width (W1) of the second central space (254A) may be larger than the widths (W2, W3) of the second side spaces (254B, 254C). That is, the width (W1) of the second central space (254A) located in the center may be the largest, and the widths (W2, W3) of the second side spaces (254B, 254C) may be relatively smaller.

[0075] For example, the width (W1) of the second central space (254A) can be set to be approximately equal to the diameter of a 6-inch substrate (W) as shown in FIG. 3.

[0076] Additionally, in the case of an 8-inch substrate (W'), the second central space (254A) corresponds to the center of the substrate (W'), and the second side spaces (254B, 254C) may correspond to the edges of the substrate (W'), respectively. However, the correspondence between the aforementioned divided spaces and the substrate is merely an example and can be varied in many ways.

[0077] Additionally, although not shown in the drawing, the plurality of divided spaces (254A, 254B, 254C) are each connected to an individual supply port (212) or supply channel so that process gas, etc. can be supplied individually. Accordingly, the flow rate, flow velocity, or concentration of the gas can be individually controlled through the plurality of divided spaces (254A, 254B, 254C). By controlling the flow rate, flow velocity, or concentration of the process gas supplied toward the substrate (W, W'), the growth rate of the thin film on the substrate (W, W') or the thickness of the thin film can be controlled, and the thickness uniformity and doping concentration uniformity of the central and peripheral parts of the substrate (W, W') can be controlled.

[0078] Meanwhile, the second vertical partition (242, 244) provided in the third space (256) may be arranged in a vertical direction to connect the third guide plate (222C) and the fourth guide plate (222D) to each other.

[0079] Looking at the third space (256), the third space (256) can be divided into three partitioned spaces (256A, 256B, 256C) by the second vertical partition (242, 244). The third space (256) can be divided into a third central space (256A) and a pair of third side spaces (256B, 256C) positioned on both sides of the third central space (256A).

[0080] The description of the third central space (256A) and the third side space (256B, 256C) is similar to the description of the divided space (254A, 254B, 254C) of the second space (254) mentioned above, so a repetitive description is omitted.

[0081] Meanwhile, in FIG. 2, the width of the second central space (254A) and the second side space (254B, 254C) is shown as being the same as the width of the third central space (256A) and the third side space (256B, 256C), but is not limited thereto.

[0082] For example, the width of the second central space (254A) may be different from the width of the third central space (256A), or the width of the second side space (254B, 254C) may be different from the width of the third side space (256B, 256C).

[0083] Meanwhile, in the present invention, the first space (252) located at the top is not divided, so that a carrier gas is injected into the first space (252) at high speed at the beginning of the process to uniformly disperse the momentum of the entire gas flow and promote laminar flow, thereby maintaining the stability of the gas injection.

[0084] Furthermore, since the first space (252) is not divided, unnecessary mixing of gases is prevented, thereby suppressing particle generation. This prevents unnecessary coating or deposition on the lower surface of the upper cover (310), thereby preventing particles from falling from the upper cover (310) and preventing contamination of the substrate (W).

[0085] In addition, the second space (254) and the third space (256) are divided by the vertical partitions (232, 234, 242, 244), so that the concentration of gas supplied by each divided space can be finely adjusted, which may be advantageous as the substrate (W) becomes larger.

[0086] In particular, when the space is divided only vertically, such as the first space (252), the second space (254), and the third space (256) without the vertical partitions (232, 234, 242, 244), convection may occur due to a difference in temperature and / or pressure in the vertical direction.

[0087] However, dividing the second space (254) and the third space (256) helps balance the local pressure on the substrate (W), thereby ensuring gas flow stability. Additionally, if the second space (254) and the third space (256) are divided into a central part and an edge part, gas depletion in the edge region of the substrate (W) can be prevented.

[0088] Meanwhile, the vertical partitions (232, 234, 242, 244) may be formed with an upper and / or lower slope corresponding to the slope of the plurality of guide plates (222A, 222B, 222C) so as to fluidly isolate adjacent partitioned spaces from each other.

[0089] Additionally, each of the vertical partitions (232, 234, 242, 244) may perform the function of determining the inclination angle of the plurality of guide plates (222A, 222B, 222C) by supporting the plurality of guide plates (222A, 222B, 222C).

[0090] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may modify and change the present invention in various ways without departing from the spirit and scope of the invention as described in the claims below. Therefore, if a modified embodiment basically includes the components of the claims of the present invention, it should be considered to be included within the technical scope of the present invention.

[0091] According to the present invention, in the configuration of a gas supply unit that supplies process gas toward a substrate, the growth rate of a thin film or the thickness of a thin film can be controlled by individually controlling the flow rate, flow velocity, or concentration of the gas supplied toward the center and the edge of the substrate, respectively.

Claims

1. Chamber; A susceptor provided inside the chamber, on which the substrate is placed and which heats the substrate; An upper cover provided on the inner side of the chamber and on the upper side of the susceptor, providing a processing space between the susceptor and the upper cover for processing the substrate; and A guide plate assembly for supplying process gas toward the processing space of the chamber; is provided, A chemical vapor deposition apparatus characterized in that the guide plate assembly comprises a plurality of guide plates arranged along a vertical direction, the process gas is supplied through a supply space between the plurality of guide plates, and at least one of the plurality of supply spaces includes one or more vertical partitions so that the supply space is partitioned along a horizontal direction.

2. In Paragraph 1, A chemical vapor deposition apparatus characterized by the above supply space being composed of a first space located at the top and supplying a first carrier gas, a second space located below the first space and supplying a process gas, and a third space located at the bottom and supplying a second carrier gas.

3. In Paragraph 2, A chemical vapor deposition apparatus characterized in that the vertical partition is provided in the second space and the third space, and divides the second space and the third space into a plurality of spaces.

4. In Paragraph 3, The second space is divided into a second central space and a pair of second side spaces arranged on both sides of the second central space, and A chemical vapor deposition apparatus characterized in that the above-mentioned third space is divided into a third central space and a pair of third side spaces arranged on both sides of the above-mentioned third central space.

5. In Paragraph 4, A chemical vapor deposition apparatus characterized in that the second central space is equal to the diameter of the substrate.

6. In Paragraph 4, A chemical vapor deposition apparatus characterized in that the width of the second central space is greater than the width of the second side space, and the width of the third central space is greater than the width of the third side space.

7. In Paragraph 3, A chemical vapor deposition apparatus characterized by the fact that the flow rate, flow velocity, or concentration of the gas supplied to the plurality of divided spaces is individually controlled.

8. In Paragraph 1, A chemical vapor deposition apparatus characterized in that at least one of the plurality of guide plates is positioned inclined toward the substrate.

9. In Paragraph 8, Among the plurality of guide plates mentioned above A chemical vapor deposition apparatus characterized by the fact that the angle of inclination of the top plate positioned at the top is the largest, and the angle of inclination of the guide plate decreases as it goes down.

10. External chamber; An inner chamber provided on the inner side of the above outer chamber; A susceptor provided on the inner side of the above inner chamber, on which the substrate is placed and which heats the substrate; An upper cover provided on the inner side of the inner chamber and on the upper side of the susceptor, providing a processing space between the susceptor and the upper cover for processing the substrate; and A guide plate assembly for supplying process gas toward the processing space of the inner chamber; is provided, A chemical vapor deposition apparatus characterized in that the guide plate assembly comprises a plurality of guide plates arranged along a vertical direction, the process gas is supplied through a supply space between the plurality of guide plates, and at least one of the plurality of supply spaces includes one or more vertical partitions so that the supply space is partitioned along a horizontal direction.

11. In Paragraph 10, A chemical vapor deposition apparatus characterized by the above supply space being composed of a first space located at the top and supplying a first carrier gas, a second space located below the first space and supplying a process gas, and a third space located at the bottom and supplying a second carrier gas.

12. In Paragraph 11, A chemical vapor deposition apparatus characterized in that the vertical partition is provided in the second space and the third space, and divides the second space and the third space into a plurality of spaces.

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