Substrate processing method and substrate processing device

The substrate processing apparatus addresses contamination issues by implementing real-time pressure monitoring and AI-enhanced detection, improving efficiency and preventing substrate contamination in the return chamber.

WO2026101087A1PCT designated stage Publication Date: 2026-05-15PSK INC +1
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
PSK INC
Filing Date
2025-10-28
Publication Date
2026-05-15

AI Technical Summary

Technical Problem

Existing substrate processing systems face challenges in accurately detecting contamination of the return chamber, leading to potential contamination of subsequent substrates due to pressure variability between the process and return chambers, which complicates the disposal of processed substrates.

Method used

A substrate processing apparatus and method that includes real-time pressure monitoring using a return chamber and process chambers, with a controller analyzing pressure changes and generating alarms for abnormal conditions, utilizing an artificial intelligence learning model to refine detection.

Benefits of technology

Enhances substrate processing efficiency by preventing contamination of subsequent substrates and ensuring timely detection of return chamber abnormalities, thereby reducing waste and maintaining processing quality.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention relates to a substrate processing method and a substrate processing device capable of preventing contamination of a subsequent substrate. According to an embodiment, by the substrate processing method, a graph representing a pressure change of a transfer chamber over time may be obtained in a pressure monitoring step of monitoring the pressure change of the transfer chamber, and whether there is a pressure abnormality in the transfer chamber may be determined according to the shape of the graph.
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Description

Substrate processing method and substrate processing device

[0001] The present invention relates to a method for processing a substrate and an apparatus for processing a substrate, and more specifically, to a substrate processing method and an apparatus capable of preventing subsequent contamination of a substrate.

[0002] Semiconductors are generally manufactured by sequentially performing a series of unit processes for film formation, pattern formation, metal wiring formation, etc. These unit processes generally take place inside a process chamber, and a substrate processing device includes a load port, an index module, a load lock chamber, and a transfer chamber to provide substrates into the process chamber. The load port supports a carrier containing the substrate, and the index module includes a transfer robot that transports the substrate between the load port and the load lock chamber. In the load lock chamber, substrates that have completed processing temporarily wait before being transferred to the load port or substrates provided for processing are transferred to the process chamber, and the transfer chamber transports substrates between the load lock chamber and the process chamber.

[0003] Generally, when transferring a substrate between a process chamber and a return chamber, the internal pressure of the process chamber is set lower than the internal pressure of the return chamber, and then the door of the process chamber is opened to transfer the substrate. By doing this, it is possible to prevent impurities generated during the process from spreading into the return chamber.

[0004] However, if the doors of multiple process chambers are opened simultaneously or sequentially, there is a possibility that the pressure inside the return chamber may become lower than the pressure inside the process chamber. As a result, impurities inside the process chamber may diffuse into the return chamber, and if the return chamber becomes contaminated, the risk of contamination of subsequent substrates increases.

[0005] Accordingly, one could consider installing pressure sensors in both the return chamber and the process chamber to compare pressures in real time, in order to verify in real time whether the pressure inside the return chamber drops below that of the process chamber. However, since the volume of the process chamber is smaller than that of the return chamber, resulting in greater pressure variability, it is difficult to determine whether the return chamber is contaminated by comparing the pressures between the two chambers based solely on the measurements from the pressure sensor installed in the process chamber. Such inaccurate judgment makes it unclear at what point the substrate became contaminated, which could ultimately lead to the problem of having to discard all processed substrates.

[0006] One objective of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of improving substrate processing efficiency.

[0007] In addition, the present invention has the objective of providing a substrate processing method and a substrate processing apparatus capable of detecting contamination of a return chamber and a substrate in real time.

[0008] In addition, the present invention has one objective of providing a substrate processing method and a substrate processing apparatus that can prevent the disposal of subsequent substrates even if the return chamber is contaminated.

[0009] The objectives of the present invention are not limited thereto, and other unmentioned objectives will be clearly understood by those skilled in the art from the description below.

[0010] The present invention discloses a method for processing a substrate. According to one embodiment, the substrate processing apparatus comprises a return chamber and a plurality of process chambers arranged around the return chamber, and includes: a substrate receiving step of receiving a substrate into a selected process chamber among the plurality of process chambers using a return robot arranged in the return chamber; a processing step of processing the substrate in the process chamber into which the substrate is received; a removal step of, after the processing step, opening the door of the return chamber and removing the substrate from the process chamber using the return robot; and a pressure monitoring step of monitoring a change in pressure inside the return chamber, wherein in the removal step, the pressure inside the process chamber is provided at a pressure lower than the pressure inside the return chamber, and the pressure monitoring step can monitor whether there is an abnormality in the pressure inside the return chamber.

[0011] According to one embodiment, the pressure monitoring step may include monitoring the pressure change within the return chamber during the discharge step.

[0012] According to one embodiment, the conveying robot includes a handle for grasping a substrate, the removal step includes a grasping step of grasping a substrate in the process chamber with the handle, and the pressure monitoring step can monitor pressure changes inside the conveying chamber up to the grasping step.

[0013] According to one embodiment, the pressure monitoring step may acquire a first graph showing the pressure change within the return chamber over time and determine whether there is an abnormality in the pressure inside the return chamber based on the shape of the first graph.

[0014] According to one embodiment, if the shape of the first graph is convex downward, the pressure inside the return chamber is determined to be in a normal state, and if the shape of the first graph is convex upward, the pressure inside the return chamber is determined to be in an abnormal state.

[0015] According to one embodiment, an alarm can be generated when the pressure inside the return chamber is determined to be in an abnormal state.

[0016] According to one embodiment, the pressure monitoring step determines whether there is an abnormality in the pressure inside the return chamber by comparing the acquired first graph with a database, and the database may include a plurality of the first graphs acquired while the pressure monitoring step was performed multiple times in the past; and a second graph showing the pressure change inside the process chamber over time acquired while the pressure monitoring step was performed multiple times in the past.

[0017] According to one embodiment, the database includes an initial pressure value inside the return chamber in the outgoing step; an average value of the pressure inside the return chamber in a first section; an average value of the pressure inside the return chamber in a second section; an average value of the pressure inside the process chamber in the first section; and an average value of the pressure inside the process chamber in the second section, wherein the first section is a set time interval before opening the door in the outgoing step, and the second section is a set time interval after opening the door in the outgoing step.

[0018] According to one embodiment, the database can be learned using an artificial intelligence learning model, and the presence or absence of an abnormal pressure inside the return chamber can be determined from the measured pressure change inside the return chamber.

[0019] In addition, the present invention discloses an apparatus for processing a substrate. According to one embodiment, the apparatus comprises: a return chamber including a return robot for returning a substrate; a plurality of process chambers provided adjacent to the return chamber; and a controller, wherein the return chamber has a first pressure sensor for measuring the internal pressure of the return chamber, and the plurality of process chambers each have an exhaust unit for exhausting the internal pressure of the process chambers, and each of the process chambers is provided to have an open state and a closed state by opening and closing a door, wherein the open state is a state in which the door is open so that the return chamber and the process chambers communicate with each other, and the closed state is a state in which the door is closed so that the return chamber and the process chambers are blocked from each other, and wherein in the closed state, the internal pressure of the return chamber is provided to have a first pressure, and the internal pressure of the process chamber is provided to have a second pressure lower than the first pressure, and the controller comprises: a processing step in which the substrate is processed in the process chamber into which the substrate is introduced; and a removal step in which the substrate, having been processed, is removed from the process chamber using the return robot. The return chamber and the process chamber can be controlled to perform a pressure monitoring step of monitoring pressure changes inside the return chamber and determining whether there is an abnormal pressure inside the return chamber, wherein in the discharge step, the pressure inside the process chamber is provided at a pressure lower than the pressure inside the return chamber, and the return chamber and the process chamber can be controlled to monitor whether there is an abnormal pressure inside the return chamber in the pressure monitoring step.

[0020] According to one embodiment, the pressure change measured by the first pressure sensor may be the pressure change when the opening state is open.

[0021] According to one embodiment, the pressure change measured by the first pressure sensor may be the pressure change until at least one of the plurality of process chambers is switched from the closed state to the open state and the handle of the conveyor robot enters the process chamber and grasps the substrate.

[0022] According to one embodiment, the controller can generate and acquire a first graph representing the pressure measured by the first pressure sensor as a change over time during the monitoring step, and determine whether there is an abnormality in the pressure inside the return chamber based on the shape of the first graph.

[0023] According to one embodiment, the controller can determine that the pressure inside the return chamber is in a normal state when the shape of the first graph is convex downward, and that the pressure inside the return chamber is in an abnormal state when the shape of the first graph is convex upward.

[0024] According to one embodiment, the controller can control the return chamber or the process chamber to generate an alarm when the pressure inside the return chamber is determined to be in an abnormal state.

[0025] According to one embodiment, each of the process chambers has a second pressure sensor that measures the pressure inside the process chamber, and the controller determines whether there is an abnormality in the pressure inside the return chamber by comparing the acquired first graph with a database, and the database may include a plurality of the first graphs acquired while the pressure monitoring step was performed multiple times in the past; and a second graph showing the pressure change inside the process chamber over time acquired while the pressure monitoring step was performed multiple times in the past.

[0026] According to one embodiment, the database includes an initial pressure value inside the return chamber in the outgoing step; an average value of the pressure inside the return chamber in a first section; an average value of the pressure inside the return chamber in a second section; an average value of the pressure inside the process chamber in the first section; and an average value of the pressure inside the process chamber in the second section, wherein the first section is a set time interval before opening the door in the outgoing step, and the second section is a set time interval after opening the door in the outgoing step.

[0027] According to one embodiment, the controller can learn the database using an artificial intelligence learning model and monitor whether there is an abnormality in the pressure inside the return chamber from the measured first graph.

[0028] In addition, the present invention discloses a method for processing a substrate. According to one embodiment, in a substrate processing apparatus having a return chamber and a plurality of process chambers arranged around the return chamber, a substrate receiving step of receiving a substrate into a selected process chamber among the plurality of process chambers using a return robot arranged in the return chamber; a processing step of processing the substrate in the process chamber into which the substrate is received; and after the processing step, a receiving step of opening the door of the return chamber and receiving the substrate from the process chamber using the return robot. The method includes a pressure monitoring step for monitoring pressure changes inside the return chamber and determining whether there is an abnormality in the pressure inside the return chamber, wherein in the discharge step, the pressure inside the process chamber is provided at a lower pressure than the pressure inside the return chamber, and the return robot includes a handle for gripping a substrate, and the pressure monitoring step acquires a first graph showing pressure changes inside the return chamber over time in the discharge step, and determines whether there is an abnormality in the pressure inside the return chamber based on the shape of the first graph, wherein if the shape of the first graph is convex downward, the pressure inside the return chamber is determined to be in a normal state, and if the shape of the first graph is convex upward, the pressure inside the return chamber is determined to be in an abnormal state, and an alarm may be generated when the pressure inside the return chamber is determined to be in an abnormal state.

[0029] According to one embodiment, the pressure monitoring step learns a database using an artificial intelligence learning model and determines whether there is an abnormality in the pressure inside the return chamber by comparing the acquired first graph with the database, wherein the database includes: an initial pressure value inside the return chamber in the outgoing step; an average value of the pressure inside the return chamber in a first section; an average value of the pressure inside the return chamber in a second section; an average value of the pressure inside the process chamber in the first section; and an average value of the pressure inside the process chamber in the second section, wherein the first section is a set time interval before opening the door in the outgoing step, and the second section is a set time interval after opening the door in the outgoing step.

[0030] According to one embodiment of the present invention, substrate processing efficiency can be improved.

[0031] In addition, according to one embodiment of the present invention, contamination of the return chamber and the substrate can be detected in real time.

[0032] In addition, according to one embodiment of the present invention, even if the return chamber is contaminated, the disposal of subsequent substrates can be prevented.

[0033] The effects of the present invention are not limited to the effects described above, and unmentioned effects will be clearly understood by those skilled in the art from this specification and the attached drawings.

[0034] The various features and benefits of the non-limiting embodiments of this specification may become more apparent from a review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the claims. Unless expressly stated otherwise, the accompanying drawings are not to be drawn to scale. For clarity, various dimensions in the drawings may be exaggerated.

[0035] FIG. 1 is a plan view schematically showing a substrate processing apparatus according to one embodiment of the present invention.

[0036] FIG. 2 is a flowchart showing a substrate processing method according to one embodiment of the present invention.

[0037] FIG. 3 is a diagram showing an example of a graph obtained in a pressure monitoring step according to an embodiment of the present invention.

[0038] FIG. 4 is a diagram showing another example of a graph obtained in the pressure monitoring step according to one embodiment of the present invention.

[0039] FIG. 5 is a flowchart illustrating a pressure monitoring step according to another embodiment of the present invention.

[0040] Figure 6 is a diagram showing an example of a multiple graphs being acquired and stored.

[0041] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments are provided to ensure that the present disclosure is thorough and will fully convey its scope to those skilled in the art. To provide a complete understanding of the embodiments of the present disclosure, many specific details, such as examples of specific components, devices, and methods, are presented. It will be apparent to those skilled in the art that specific details are not necessary, that exemplary embodiments may be implemented in many different forms, and that neither should be interpreted as limiting the scope of the present disclosure. In some exemplary embodiments, known processes, known device structures, and known technologies are not described in detail.

[0042] The terms used herein are merely for describing specific exemplary embodiments and are not intended to limit exemplary embodiments. Singular expressions or expressions where singularity is not specified, as used herein, are intended to include plural expressions unless the context clearly indicates otherwise. The terms “comprising,” “comprising,” “having,” and “having” are open-ended and thus specify the presence of the mentioned features, components, steps, operations, elements, and / or components, and do not exclude the presence or addition of one or more other features, components, steps, operations, elements, components, and / or groups thereof. Method steps, processes, and operations in this specification are not to be interpreted as necessarily being performed in the specific order discussed or described unless the order of performance is specified. Additionally, additional or alternative steps may be selected.

[0043] When an element or layer is referred to as being "on," "connected," "combined," "attached," "adjacent," or "covering" another element or layer, it may be directly on, connected to, combined with, attached to, adjacent to, or covering said other element or layer, or intermediate elements or layers may exist. Conversely, when an element is referred to as being "directly on," "directly connected to," or "directly combined" with another element or layer, it should be understood that intermediate elements or layers do not exist. Throughout the specification, the same reference numerals refer to the same elements. The term "and / or" as used in the present invention includes all combinations and non-combinations of one or more of the listed items.

[0044] Although terms such as first, second, third, etc., may be used to describe various elements, regions, layers, and / or sections in the present invention, it should be understood that these elements, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, region, layer, or section from another element, region, layer, or section. Accordingly, the first element, first region, first layer, or first section discussed below may be referred to as the second element, second region, second layer, or second section without departing from the teachings of the exemplary embodiments.

[0045] Spatially relative terms (e.g., "below," "under," "lower," "above," "top," etc.) may be used for convenience of explanation to describe the relationship between one element or feature and another element(s) or feature(s) as illustrated in the drawings. It should be understood that spatially relative terms are intended to include not only the orientations illustrated in the drawings but also other orientations of the device in use or operation. For example, if the device in the drawings is inverted, elements described as "below" or "under" other elements or features will be oriented "above" other elements or features. Thus, the term "below" may include both upper and lower orientations. The device may be oriented differently (rotated 90 degrees or in a different orientation), and the spatially relative descriptive terms used in the present invention may be interpreted accordingly.

[0046] It should be understood that there may be some inaccuracy when the terms "identical" or "same" are used in the description of the embodiments. Therefore, if one element or value is referred to as identical to another element or value, it should be understood that said element or value is identical to another element or value within a manufacturing or operating tolerance (e.g., ±10%).

[0047] Where the words “approximately” or “substantially” are used in this specification with respect to figures, it should be understood that such figures include a manufacturing or operational tolerance (e.g., ±10%) of the figures mentioned. Additionally, where the words “generally” and “substantially” are used with respect to geometric forms, it should be understood that while geometric accuracy is not required, freedom of form (latitude) is within the scope of disclosure.

[0048] Unless otherwise defined, all terms used in the present invention (including technical and scientific terms) have the same meaning as generally understood by those skilled in the art to which the exemplary embodiments belong. Furthermore, terms, including those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with that meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in the present invention.

[0049] In this embodiment, a wafer is used as an example of the object to be processed. However, the technical concept of the present invention may be applied to devices used for processing other types of substrates besides wafers as the object to be processed.

[0050] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.

[0051] FIG. 1 is a plan view schematically showing a substrate processing apparatus according to one embodiment of the present invention. Referring to FIG. 1, the substrate processing apparatus (1) has an index module (100), a load lock chamber (200), a processing module (300), and a controller (500). The index module (100), the load lock chamber (200), and the processing module (300) are arranged along a certain direction. The index module (100), the load lock chamber (200), and the processing module (300) are arranged along a first direction (11).

[0052] The index module (100) returns the substrate (W) from the container (10) containing the substrate (W) to the processing module (300), and receives the substrate (W) that has been processed in the processing module (300) back into the container (10). The index module (100) is provided with a length direction in the second direction (12). The index module (100) has a load port (120) and an index frame (140). The load port (120) is located on the opposite side of the processing module (300) relative to the index frame (140). The container (10) containing the substrates (W) is placed in the load port (120). Multiple load ports (120) may be provided.

[0053] As the container (10), a sealed container (10), such as a Front Open Unified Pod (FOUP), may be used. The container (10) may be placed at a load port (120) by a transport means (not shown), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by a worker.

[0054] The index frame (140) may have a space sealed from the outside. The space within the index frame (140) may be provided at atmospheric pressure. Optionally, the space within the index frame (140) may be provided at a pressure higher than atmospheric pressure. A fan filter unit (not shown) is provided at the top of the index frame (140). The fan filter unit forms a downward airflow within the index frame (140). A door opener (not shown) for opening and closing the door of the container (10) may be provided within the index frame (140).

[0055] An index robot (142) is provided in the index frame (140). A guide rail (148) is provided within the index frame (140) such that its length direction is a second direction (12), and the index robot (142) can be provided to be movable on the guide rail (148). The index robot (142) includes a hand (142a) on which a substrate (W) is placed, and the hand (142a) can be provided to be capable of forward and backward movement, rotation about an up-down axis, and movement along the up-down direction. A plurality of hands (142a) are provided spaced apart in the up-down direction, and the hands (142a) can move forward and backward independently of each other.

[0056] The load lock chamber (200) is positioned adjacent to the index frame (140). The load lock chamber (200) may be positioned between the return chamber (340) and the index module (100). A substrate (W) being returned from the container (10) to the process chamber (360) may be temporarily stored in the load lock chamber (200) after being removed from the container (10). Additionally, a substrate (W) that has completed processing in the process chamber (360) may be temporarily stored in the load lock chamber (200) while being returned to the container (10). Multiple load lock chambers (200) may be provided. A substrate (W) may be returned between the index frame (140) and the return chamber (340) through each load lock chamber (200). Optionally, the substrate (W) can be returned from the index frame (140) to the return chamber (340) through one of the load lock chambers (200), and returned from the return chamber (340) to the index frame (140) through the other of the load lock chambers (200).

[0057] The processing module (300) includes a return chamber (340) and a process chamber (360). The return chamber (340) is positioned adjacent to the load lock chamber (200). When viewed from above, the return chamber (340) may be provided in a polygonal shape. A return robot (342) is positioned in the return chamber (340). The return robot (342) returns a substrate (W) between the load lock chamber (200) and the process chamber (360). The interior of the return chamber (340) may be provided under vacuum pressure.

[0058] The transfer robot (342) includes a hand (342a) on which a substrate (W) is placed, and the hand (342a) may be provided to enable forward and backward movement, rotation about an up-and-down axis, and movement along the up-and-down direction. Multiple hands (342a) may be provided spaced apart in the up-and-down direction, and the hands (342a) may move forward and backward independently of each other. One of the hands (342a) may support the substrate (W) being transferred from the load lock chamber (200) to the process chamber (360), and another of the hands (342a) may support the substrate (W) being transferred from the process chamber (360) to the load lock chamber (200).

[0059] Additionally, the internal pressure of the return chamber (340) can be measured by a first pressure sensor (346). The first pressure sensor (346) is provided to transmit the measured value to a controller (500). The first pressure sensor (346) may be provided as a Baratron Gauge, a Pirani Gauge, or a Thermocouple Gauge, but is not limited thereto, and it is sufficient if it is provided to measure the internal pressure of the return chamber (340).

[0060] The interior of the return chamber (340) is exhausted by an exhaust member (348). The exhaust member (348) is provided to reduce the pressure inside the return chamber (340). The exhaust member (348) causes the internal pressure of the return chamber (340) to be formed within a specific range. In one example, the exhaust member (348) may be a pump.

[0061] The process chamber (360) performs a process for processing a substrate (W). According to one example, the process chamber (360) may form a plasma using an inductively coupled plasma (ICP) method or a conductively coupled plasma (CCP) method and perform a process for processing the substrate (W) using the plasma. For example, the process chamber (360) may perform a process for etching a thin film on the substrate (W) or a process for etching the outermost edge region (bevel) of the substrate (W).

[0062] The process chamber (360) includes a door (364), a second pressure sensor (366), and an exhaust member (368).

[0063] A door (364) is provided to open and close the entrance (362) of the process chamber. When the door (364) is in an open state, the internal spaces of the return chamber (340) and the process chamber (360) are connected to each other. Conversely, when the door (364) is closed, the internal spaces of the return chamber (340) and the process chamber (360) are blocked from each other. The door (364) is operated by an actuator not shown, and the actuator may be provided as a cylinder type. The door (364) may be controlled by a controller (500) to switch between an open state and a closed state.

[0064] The second pressure sensor (366) measures the internal pressure of the process chamber (360). The second pressure sensor (366) is provided to transmit the measured value to the controller (500). The second pressure sensor (366) may be provided as a Baratron Gauge, a Pirani Gauge, or a Thermocouple Gauge, but is not limited thereto, and it is sufficient if it is provided to measure the internal pressure of the process chamber (360).

[0065] The exhaust member (368) exhausts the interior of the process chamber (360). The exhaust member (368) can regulate the internal pressure of the process chamber (360) by adjusting the exhaust force. In one example, the exhaust member may be provided as a pump.

[0066] A process chamber (360) is positioned on the side of a return chamber (340). A plurality of process chambers (360) are provided. For example, four process chambers (360) (360-1, 360-2, 360-3, 360-4) may be provided and may be paired or individually positioned on each side of the return chamber (340). The process chambers (360) may be provided to perform the same process on the substrate (W) together. Optionally, some of the process chambers (360) may be provided to perform a series of processes sequentially on the substrate (W). Additionally, if a plurality of process chambers (360) are provided, each door (364-1, 364-2, 364-3, 364-4) and each exhaust member (368-1, 368-2, 368-3, 368-4) can be driven independently by a controller (500).

[0067] Additionally, each pressure sensor (346, 366) is connected to a controller (500). The controller (500) is configured to receive and store pressure values ​​measured and transmitted by each pressure sensor (346, 366). Additionally, the controller (500) is provided to display the received values. In one example, the controller (500) may be configured to graph the received pressure values ​​and display them on a display device not shown. Additionally, the controller (500) may control the configuration of the substrate processing device described above based on the results of analyzing the received values. In one example, the controller (500) may be configured to stop the operation of each configuration based on the analysis results or to transmit the results to an operator through an alarm means not shown.

[0068] The controller (500) may include a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory). The CPU transfers the substrate according to various algorithms and recipes stored in their memory areas and executes desired processes such as etching. The algorithms and recipes contain control information for the device regarding the sequence and conditions for transferring the substrate and process conditions. Meanwhile, the algorithms and recipes representing these programs or processing conditions may be stored on a non-transient computer-readable medium. A non-transient computer-readable medium refers to a medium that stores data semi-permanently and is readable by a computer, rather than a medium that stores data for a short moment, such as a register, cache, or memory. Specifically, the various applications or programs described above may be stored and provided on a non-transient computer-readable medium such as a CD, DVD, hard disk, Blu-ray disc, USB, memory card, ROM, etc.

[0069] Hereinafter, a method for processing a substrate is described. The substrate processing method described below can be performed by a substrate processing device described with reference to FIG. 1. Accordingly, the substrate processing method according to one embodiment is described below by citing the reference numerals shown in FIG. 1 as they are. In addition, the substrate processing method described below can be performed by a controller (500) controlling an index module (100), a load lock chamber (200), and a processing module (300).

[0070] FIG. 2 is a flowchart showing a substrate processing method according to an embodiment of the present invention. Referring to FIG. 2, the substrate processing method according to an embodiment of the present invention may include a substrate receiving step (S100), a processing step (S200), an output step (S300), and a pressure monitoring step (S400).

[0071] The substrate loading step (S100) is a step of loading a substrate (W) from the return chamber (340) into the process chamber (360). The door (364) is opened, and the return robot (342) advances the handle (342a) holding the substrate (W) into the process chamber (360). The handle (342a) returns the substrate (W) to the process chamber (360) through the entrance (362). Afterward, the substrate (W) is transferred to a substrate support unit provided in the process chamber (360), the handle (342a) retracts into the return chamber (340), and the door (364) is closed.

[0072] After the substrate loading step (S100), a processing step (S200) is performed. In the processing step (S200), the substrate (W) may be processed by plasma. For example, a process to etch a thin film on the substrate (W) or a process to etch the outermost edge region (bevel) of the substrate (W) may be performed. Impurities are formed during the process of processing the substrate (W). Since the substrate (W) may be discarded if it is contaminated by impurities, the impurities must be properly controlled.

[0073] After the processing step (S200), the removal step (S300) is performed. After the processing is completed, the substrate (W) is removed from the process chamber (360). The removal step (S300) may include an adjustment step (S310), an opening step (S320), a gripping step (S330), and a retraction step (S340).

[0074] The adjustment step (S310) is a step of adjusting the internal pressure of the process chamber (360) before opening the door (364) after the process is finished. Generally, since the process using plasma is performed at a pressure significantly lower than the internal pressure of the return chamber, if the door (364) is opened without adjusting the pressure, a strong airflow may flow into the process chamber (360), and there is a risk that impurities remaining inside may fall onto the substrate (W). To prevent this problem, the pressure inside the process chamber (360) is adjusted to a higher pressure than during the process in the adjustment step (S310). According to one example, in the adjustment step (S310), the inside of the return chamber (340) is maintained at a first pressure (P1), and the pressure inside the process chamber (360) is adjusted to a second pressure (P2), and the first pressure (P1) may be a higher pressure than the second pressure (P2).

[0075] After the adjustment step (S310), the opening step (S320) is performed. The opening step (S320) is a step of opening the door (364). By opening the door (364), the internal spaces of the return chamber (340) and the process chamber (360) are connected to each other through the entrance (362).

[0076] After the opening step (S320), the gripping step (S330) is performed. In the gripping step (S330), the hand (342a) of the transfer robot enters the process chamber (360) through the entrance (362). The hand (342a) grips the substrate (W) supported by the support unit.

[0077] After the gripping step (S330), the hand (342a) retracts. Accordingly, the substrate (W) is removed from the process chamber (360). The removed substrate (W) is transferred to a FOUP or a chamber for the next process to proceed with the next process. If there is a subsequent substrate (W), the above process can be repeated starting from the receiving step (S100).

[0078] The pressure monitoring step (S400) is a step of monitoring the pressure inside the return chamber (300). The pressure monitoring step (S400) can be performed simultaneously and in parallel while the substrate loading step (S100) to the output step (S300) are performed. According to one example, the pressure monitoring step (S400) can be performed from the adjustment step (S310) to the gripping step (S330).

[0079] In the pressure monitoring step (S400), it is determined whether there is an abnormality in the pressure inside the return chamber (300). In the pressure monitoring step (S400), a graph showing the pressure change inside the return chamber (340) over time is acquired in real time, and the presence or absence of an abnormality in the pressure inside the return chamber (340) can be determined based on the shape of the graph. According to one example, if the shape of the graph is convex downward, it is determined that the pressure inside the return chamber (340) is in a normal state, and if the shape of the graph is convex upward, it is determined that the pressure inside the return chamber is in an abnormal state. Additionally, optionally, a graph showing the internal pressure change of the process chamber (360) can be acquired in the pressure monitoring step (S400). In the following, the graph showing the pressure change of the return chamber (340) may be the first graph, and the graph showing the pressure change of the process chamber (360) may be the second graph. In the pressure monitoring step (S400), the value indicated by the second graph can also be used to determine whether there is an abnormality in the pressure inside the return chamber (340).

[0080] FIG. 3 is a diagram showing an example of a graph obtained during a pressure monitoring step according to an embodiment of the present invention. Referring to FIG. 3, in the adjustment step (S100), the internal pressure of the return chamber (340) is formed at a first pressure (P1) and is maintained at the first pressure (P1) until the door (364) is opened (t0 to t1). Subsequently, in the opening step (S200), the door (364) is opened (t1). When the door (364) is opened, the internal pressure of the return chamber (340) is formed to be higher than the internal pressure of the process chamber (360), and because the internal space of the return chamber (340) is connected to the internal space of the process chamber (360), the volume of the entire space increases instantaneously, so the pressure inside the return chamber (340) decreases (t1 to t-2). However, as time passes, the gas present inside the return chamber (340) and the process chamber (360) diffuses into each other, and as the return chamber (340) is exhausted at a constant exhaust pressure, the above effects disappear, and the pressure inside the return chamber (340) returns to the first pressure (P1) (t2~t-3). Afterward, the return robot (342) grasps the substrate (W) (t4). The graph of the internal pressure change of the return chamber (340) after undergoing the above process takes on a downward convex shape. Similarly, the internal pressure of the process chamber (360) also decreases from the second pressure (P2) and recovers according to the above reason. Accordingly, even if the opening step (S310) and subsequent steps are performed, the internal pressure of the return chamber (340) is maintained higher than the internal pressure of the process chamber (360), thereby preventing impurities from entering the return chamber (340).

[0081] FIG. 4 is a diagram showing an example of a graph measured in a pressure monitoring step according to an embodiment of the present invention. When the opening step (S310) is performed at a time interval in a plurality of process chambers (360-1, 360-2, 360-3, 360-4), the return chamber (340) may undergo a pressure change as shown in FIG. 4. When the door (364-1) is opened to bring in or take out a substrate (W), the internal pressure of the return chamber (340) decreases as described above. The reduced internal pressure of the return chamber (340) may be lower than the second pressure (P2). Subsequently, the internal pressure of the return chamber (340) recovers over time. However, if at least one other door (364-2, 364-3, 364-4) is opened (t1') before the reduced pressure is restored, the internal pressure of the return chamber (340) may be lower than the internal pressure of the process chamber (360). Accordingly, an airflow may be formed from the process chamber (360) to the return chamber (340). Due to this airflow, the pressure of the return chamber (340) rises (t1'~t2'). The risen pressure stabilizes over time. The stabilized pressure may be lower than the first pressure (P1). This is because, with the interiors of the return chamber (340) and the two process chambers (360-1, 360-2) in communication with each other, the exhaust force may influence the two process chambers (360-1, 360-2) to be maintained at the second pressure (P2). Accordingly, the pressure inside the return chamber (340) over time has an upward convex shape on the graph.

[0082] As described above, during the process in which multiple doors (360-1, 360-2, 360-3, 360-4) are opened with a time difference, there are cases where the internal pressure of the return chamber (340) becomes lower than the internal pressure of the process chamber (360). In this case, impurities in the process chamber (360) may spread into the return chamber (340), causing contamination of the return chamber (340).

[0083] According to one embodiment of the present invention, in the pressure monitoring step (S400), a change in pressure of the return chamber (340) can be detected in real time to determine whether there is an abnormality in the internal pressure of the return chamber (340). If it is determined that the internal pressure of the return chamber (340) is in an abnormal state, the operator can prevent the subsequent substrate (W) from proceeding and clean the inside of the return chamber (340). Accordingly, it is possible to prevent the subsequent substrate (W) from being contaminated in the return chamber (340).

[0084] FIG. 5 is a flowchart illustrating another embodiment of the pressure monitoring step. Referring to FIG. 5, the pressure monitoring step (S400) may further include a graph acquisition step (S410), a graph storage step (S420), a database formation step (S430), and a database learning step (S440).

[0085] The graph acquisition step (S410) is a step of acquiring a graph showing how the internal pressure of the return chamber (340) changes over time. The graph may be an upward-convex graph or a downward-convex graph. The graph acquisition step (S410) may acquire multiple graphs as the process of processing the substrate (W) is performed multiple times.

[0086] The graph acquisition step (S420) is a step for storing multiple graphs acquired in the graph acquisition step (S410). FIG. 6 is a diagram showing an example of multiple graphs being acquired and stored. Referring to FIG. 6, the multiple graphs can be divided into a group consisting of upwardly convex graphs and a group consisting of downwardly convex graphs. Furthermore, within each group, the upwardly convex graphs and the downwardly convex graphs can be seen to be spread. This is because, during the process of transporting and processing the substrate (W), the pressure of the transport chamber (340) may be formed within a certain range due to the influence of the position of the process chamber (360), temporary performance changes of the exhaust member (348), operation of the transport robot (342), and temporary malfunction of the pressure sensor (346). Such pressure spread can affect the shape of the graph, making it difficult to determine whether there is an abnormality in the pressure inside the transport chamber (340).

[0087] The database formation step (S430) is a step of creating a database of multiple graphs acquired in the graph acquisition step (S420). The database may include the initial pressure value inside the return chamber in the outgoing step (S300), the average value of the internal pressure of the return chamber (340) in the first section, the average value of the internal pressure of the return chamber (340) in the second section, the average value of the internal pressure of the process chamber (360) in the first section, and the average value of the internal pressure of the process chamber (360) in the second section. The first section may be a set time interval before opening the door in the outgoing step, and the second section may be a set time interval after opening the door in the outgoing step. The first section is a section included in the adjustment step (S320) where the internal pressure of the return chamber (340) is maintained constant, and the second section may be a section that includes a time when the graph has a maximum value or a minimum value.

[0088] The database learning step (S440) is a step of learning the database using an artificial intelligence learning model. The artificial intelligence may include a machine learning model, and through this, the presence or absence of pressure abnormalities inside the return chamber (340) can be detected more precisely by analyzing vast amounts of data and learning patterns. In particular, using a machine learning model is very effective for analyzing graph-shaped data such as changes in internal pressure of the return chamber (340). Pressure fluctuations over time are visualized in a graph form, and by the machine learning model learning from this, the presence or absence of pressure abnormalities inside the return chamber (340) can be detected more precisely.

[0089] Various algorithms can be used as machine learning models, and for example, the Random Forest model can be utilized. The Random Forest model is an ensemble learning technique based on decision trees. Random Forest constructs multiple decision trees that have learned different samples and characteristics within a database, and makes a final decision by synthesizing the predictions from each tree. This approach effectively prevents the overfitting problem that can occur with a single decision tree and provides robustness capable of handling diverse data patterns. Therefore, utilizing the Random Forest model enables more accurate detection of abnormal patterns in various data samples, such as pressure changes within a return chamber, and allows for precise analysis based on the complex characteristics of the data. As another example, Support Vector Machines (SVM), Neural Networks, and clustering techniques can be used as machine learning models. However, they are not limited to these; any machine learning model capable of detecting abnormal pressure is sufficient.

[0090] In the embodiments described above, the method is described based on a flowchart as a series of steps or blocks; however, the present invention is not limited to the order of the steps, and some steps may occur in a different order or simultaneously with other steps as described above. Furthermore, those skilled in the art will understand that the steps shown in the flowchart are not exclusive, and other steps may be included, or one or more steps of the flowchart may be omitted without affecting the scope of the present invention.

[0091] In the example described above, the database was described as including the pressure value of the process chamber (360). However, it is not limited to this, and the database may not include the pressure value of the process chamber (360). The machine learning model may be provided to determine whether there is an abnormality in the pressure of the return chamber (340) by learning only the pattern of the pressure value of the return chamber (340).

[0092] The above detailed description is illustrative of the present invention. Furthermore, the foregoing describes preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, modifications or alterations are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the described disclosure, and / or the scope of the art or knowledge. The described embodiments describe the best state for implementing the technical concept of the present invention, and various modifications required in specific fields of application and uses of the present invention are possible. Accordingly, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be interpreted as including other embodiments.

Claims

1. Regarding the method of processing the substrate, A substrate receiving step in a substrate processing apparatus having a return chamber and a plurality of process chambers arranged around the return chamber, wherein a substrate is brought into a selected process chamber among the plurality of process chambers by a return robot arranged in the return chamber; A processing step in which the above substrate is processed in the process chamber into which it is introduced; After the processing step above, a removal step of opening the door of the return chamber and removing the substrate from the process chamber using the return robot; and It includes a pressure monitoring step for monitoring pressure changes inside the above-mentioned return chamber, and In the above-mentioned discharge step, the pressure inside the process chamber is provided at a pressure lower than the pressure inside the return chamber, and The above pressure monitoring step A substrate processing method for monitoring the presence or absence of pressure abnormalities inside the above-mentioned return chamber.

2. In Paragraph 1, The above pressure monitoring step is, A substrate processing method comprising monitoring pressure changes within the return chamber during the above-mentioned outgoing step.

3. In Paragraph 2, The above-mentioned return robot is, It includes a handle for gripping a substrate, The above-mentioned export step is, It includes a gripping step of gripping a substrate in the process chamber with the handle, The above pressure monitoring step is, A substrate processing method that monitors pressure changes inside the return chamber up to the above-mentioned gripping step.

4. In Paragraph 3, The above pressure monitoring step is, A first graph showing the pressure change within the above-mentioned return chamber over time is obtained, and A substrate processing method for determining whether there is an abnormality in the pressure inside the return chamber based on the shape of the first graph above.

5. In Paragraph 4, If the shape of the first graph above is convex downward, the pressure inside the return chamber is determined to be in a normal state, and A substrate processing method in which the pressure inside the return chamber is determined to be in an abnormal state when the shape of the first graph above is convex upward.

6. In Paragraph 5, A substrate processing method that generates an alarm when the pressure inside the above-mentioned return chamber is determined to be in an abnormal state.

7. In Paragraph 4, The above pressure monitoring step is, The acquired first graph and database are compared to determine whether there is an abnormality in the pressure inside the return chamber, and The above database is, A plurality of the first graphs acquired while the pressure monitoring step was performed multiple times in the past; and A substrate processing method comprising a second graph showing the pressure change inside the process chamber over time, which was obtained while the pressure monitoring step was performed multiple times in the past.

8. In Paragraph 7, The above database is, In the above-mentioned discharge step, the initial pressure value inside the return chamber; The average value of the internal pressure of the return chamber in the first section; The average value of the internal pressure of the return chamber in the second section; The average value of the internal pressure of the process chamber in the first section; and It includes the average value of the internal pressure of the process chamber in the second section above, and The above first interval is a set time interval before opening the door in the above outgoing step, and The above second section is a substrate processing method that is a set time interval after opening the door in the above-mentioned outgoing step.

9. In Paragraph 8, A substrate processing method that learns the above database using an artificial intelligence learning model and determines whether there is an abnormality in the pressure inside the return chamber from the measured pressure change inside the return chamber.

10. In an apparatus for processing a substrate, A return chamber including a return robot for returning a substrate; A plurality of process chambers provided adjacent to the above-mentioned return chamber; and Includes a controller, The above return chamber has a first pressure sensor for measuring the pressure inside the return chamber, The plurality of process chambers each have an exhaust unit that exhausts the interior of the process chambers. Each of the above process chambers is provided to have an open state and a closed state by opening and closing a door, and The above open state is a state in which the door is opened so that the return chamber and the process chamber are in communication with each other, and The above closed state is a state in which the door is closed so that the return chamber and the process chamber are blocked from each other, and In the above closed state, the internal pressure of the return chamber is provided to have a first pressure, and the internal pressure of the process chamber is provided to have a second pressure lower than the first pressure, and The above controller is, A processing step in which the above substrate is processed in the process chamber into which it is introduced; A removal step of removing the processed substrate from the process chamber using the transfer robot; and Control the return chamber and the process chamber to perform a pressure monitoring step of monitoring pressure changes inside the return chamber and determining whether there is an abnormality in the pressure inside the return chamber, In the above-mentioned discharge step, the pressure inside the process chamber is provided at a pressure lower than the pressure inside the return chamber, and A substrate processing device that controls the return chamber and the process chamber to monitor for pressure abnormalities inside the return chamber during the pressure monitoring step.

11. In Paragraph 10, The pressure change measured by the first pressure sensor is, A substrate processing device that is a pressure change when the above-mentioned open state.

12. In Paragraph 11, The pressure change measured by the first pressure sensor is, A substrate processing device having a pressure change until at least one of the plurality of process chambers is switched from the closed state to the open state, and the handle of the conveyor robot enters the process chamber and grasps the substrate.

13. In Paragraph 12, The above controller is, In the above monitoring step, a first graph representing the pressure measured by the first pressure sensor as a change over time is generated and acquired, and A substrate processing device that determines whether there is an abnormality in the pressure inside the return chamber based on the shape of the first graph above.

14. In Paragraph 13, The above controller is, When the shape of the first graph above is convex downward, the pressure inside the return chamber is in a normal state, and A substrate processing method in which the pressure inside the return chamber is determined to be in an abnormal state when the shape of the first graph above is convex upward.

15. In Paragraph 14, The above controller is, A substrate processing method for controlling the return chamber or the process chamber to generate an alarm when the pressure inside the return chamber is determined to be in an abnormal state.

16. In Paragraph 15, Each of the above process chambers is, having a second pressure sensor for measuring the pressure inside the process chamber, The above controller is, The acquired first graph and database are compared to determine whether there is an abnormality in the pressure inside the return chamber, and The above database is, A plurality of the first graphs acquired while the pressure monitoring step was performed multiple times in the past; and A substrate processing apparatus comprising a second graph showing pressure changes inside the process chamber over time, acquired while the pressure monitoring step was performed multiple times in the past.

17. In Paragraph 16, The above database is, In the above-mentioned discharge step, the initial pressure value inside the return chamber; The average value of the internal pressure of the return chamber in the first section; The average value of the internal pressure of the return chamber in the second section; The average value of the internal pressure of the process chamber in the first section; and It includes the average value of the internal pressure of the process chamber in the second section above, and The above first interval is a set time interval before opening the door in the above outgoing step, and The above second section is a substrate processing device that is a set time interval after opening the door in the above outgoing step.

18. In Paragraph 17, The above controller is, A substrate processing device that learns the database using an artificial intelligence learning model and monitors whether there is an abnormality in the pressure inside the return chamber from the measured first graph.

19. In a method for processing a substrate, A substrate receiving step in a substrate processing apparatus having a return chamber and a plurality of process chambers arranged around the return chamber, wherein a substrate is brought into a selected process chamber among the plurality of process chambers by a return robot arranged in the return chamber; A processing step in which the above substrate is processed in the process chamber into which it is introduced; After the processing step above, a removal step of opening the door of the return chamber and removing the substrate from the process chamber using the return robot; and It includes a pressure monitoring step for monitoring pressure changes inside the return chamber and determining whether there is an abnormality in the pressure inside the return chamber, and In the above-mentioned discharge step, the pressure inside the process chamber is provided at a pressure lower than the pressure inside the return chamber, and The above-mentioned return robot is, It includes a handle for gripping a substrate, The above pressure monitoring step is, In the above-mentioned outgoing step, a first graph showing the pressure change within the return chamber over time is obtained, and Determining whether there is an abnormality in the pressure inside the return chamber based on the shape of the first graph above, If the shape of the first graph above is convex downward, the pressure inside the return chamber is determined to be in a normal state, and If the shape of the first graph above is convex upward, it is determined that the pressure inside the return chamber is in an abnormal state, and A substrate processing method that generates an alarm when the pressure inside the above-mentioned return chamber is determined to be in an abnormal state.

20. In Paragraph 19, The pressure monitoring step described above involves learning a database using an artificial intelligence learning model and comparing the acquired first graph with the database to determine whether there is an abnormality in the pressure inside the return chamber, The above database is, In the above-mentioned discharge step, the initial pressure value inside the return chamber; The average value of the internal pressure of the return chamber in the first section; The average value of the internal pressure of the return chamber in the second section; The average value of the internal pressure of the process chamber in the first section; and It includes the average value of the internal pressure of the process chamber in the second section above, and The above first interval is a set time interval before opening the door in the above outgoing step, and The above second section is a substrate processing method that is a set time interval after opening the door in the above-mentioned outgoing step.