Electrostatic chuck

Abstract

A plasma processing system includes a substrate support including a baseplate including a first ceramic layer and a first bond layer bonding the first ceramic layer to the baseplate. A second ceramic layer includes a flat annular body attached by a second bond layer to an upper surface of the baseplate at a location radially outside of the first ceramic layer. An edge ring includes a bottom surface with a radially inner portion and a radially outer portion. The radially inner portion of the edge ring is arranged above the second ceramic layer.

Description

Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAELECTROSTATIC CHUCKCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No.63 / 721 ,108 filed on November 15, 2024. The entire disclosure of the above application is incorporated herein by reference.FIELD

[0002] The present disclosure relates to substrate processing systems, and more particularly to electrostatic chucks for substrate processing systems.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] Substrate processing systems may be used to treat substrates such as semiconductor wafers. The substrate treatments may include deposition, etching, cleaning, and / or other treatments. During processing, a substrate is arranged on a substrate support in a processing chamber of the substrate processing system. Gas mixtures are introduced into the processing chamber using a gas delivery device. In some processes, radio frequency (RF) plasma may be used to initiate chemical reactions.SUMMARY

[0005] An edge ring for a plasma processing system includes an annular body and a first horizontal surface of the annular body. A first sloped surface of the annular body extends inwardly and radially downwardly from the first horizontal surface. A second horizontal surface of the annular body extending radially inwardly from the first sloped surface. A second sloped surface of the annular body extending radially inwardly and downwardly from the second horizontal surface. A third horizontal surface of the annular body extending radially inwardly from the second sloped surface. A first vertical surface of the annular body extending downwardly from a radially inner edge of the thirdAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAhorizontal surface. A cavity extends into the annular body and is configured to receive a mechanical clamp.

[0006] In other features, the annular body further comprises a fourth horizontal surface extending radially outwardly from the first vertical surface, a second vertical surface extending downwardly from the fourth horizontal surface, and a fifth horizontal surface extending radially outwardly from the second vertical surface.

[0007] In other features, a second vertical surface extending upwardly from the fifth horizontal surface to the first horizontal surface. The cavity extends upwardly into the fifth horizontal surface. An annular groove is located between the first vertical surface and the fourth horizontal surface.

[0008] A system includes the edge ring and a substrate support including a baseplate, a ceramic layer including a cylindrical portion and an annular step, and a bond layer bonding the ceramic layer to a radially inner portion of the baseplate. The annular step is received in the annular groove. A thermal interface layer is arranged between a radially outer portion of the baseplate and the annular body.

[0009] In other features, the annular step extends radially outwardly in a range from 5% to 25% of a radial width of the edge ring. A middle portion of the edge ring is arranged above the thermal interface layer extends in a range from 40% to 90% of a radial width of the edge ring. A sheath control ring is arranged around a radially outer side of the baseplate and below a radially outer portion of the annular body. The sheath control ring extends below the edge ring in arrange from 5% to 30% of a radial width of the edge ring. The sheath control ring includes a bore configured to reciprocally receive a shaft of the mechanical clamp. A middle portion of the edge ring arranged above the thermal interface layer extends in a range from 40% to 90% of a radial width of the edge ring.

[0010] A system includes a substrate support including a baseplate, a ceramic layer including a cylindrical portion and an annular step, and a bond layer bonding the ceramic layer to a radially inner portion of the baseplate. The system includes the edge ring. An annular shim includes a flat annular body arranged between a horizontal surface in the annular groove and an upper surface of the annular step of the ceramic layer. The annular shim is made of a plasma resistant material. The annular step extends radially outwardly in a range from 5% to 25% of a radial width of the edge ring.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA

[0011] A system includes a substrate support including a baseplate, a ceramic layer including a cylindrical portion and an annular step, and a bond layer bonding the ceramic layer to a radially inner portion of the baseplate. The system includes the edge ring. The fourth horizontal surface of the edge ring further comprises a cavity. A first annular seal is arranged between the annular step and an upper surface of the radially projecting portion of the ceramic layer. A second annular seal is arranged in the cavity.

[0012] In other features, a cavity is at least partially defined between the edge ring and an upper surface of the baseplate. A bore in the baseplate includes an outlet in fluid communication with the cavity. A cooling gas source is configured to supply cooling gas to the cavity.

[0013] A plasma processing system includes a substrate support including a baseplate including a first ceramic layer and a first bond layer bonding the first ceramic layer to the baseplate. A second ceramic layer includes a flat annular body attached by a second bond layer to an upper surface of the baseplate at a location radially outside of the first ceramic layer. An edge ring includes a bottom surface with a radially inner portion and a radially outer portion. The radially inner portion of the edge ring is arranged above the second ceramic layer.

[0014] In other features, a sheath control ring arranged around a radially outer side of the baseplate and below the radially outer portion of the edge ring. The second ceramic layer includes a first embedded electrode configured to receive a DC chucking bias. The first embedded electrode is further configured to receive an RF bias. The second ceramic layer includes a second embedded electrode configured to receive an RF bias.

[0015] In other features, the baseplate and the second ceramic layer include a bore configured to deliver gas to a cavity defined in one of an upper surface of the second ceramic layer and a bottom surface of the edge ring. The one of the upper surface of the second ceramic layer and the bottom surface of the edge ring includes a plurality of mesas. The one of the upper surface of the second ceramic layer and the bottom surface of the edge ring includes two or more annular seal bands.

[0016] In other features, the edge ring includes an annular body, a first horizontal surface of the annular body, a first sloped surface extending radially inwardly and downwardly from the first horizontal surface, a second horizontal surface extending radially inwardly from the first sloped surface, a second sloped surface extending radially inwardly and downwardly from the second horizontal surface, a third horizontal surfaceAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAextending radially inwardly from the second sloped surface below a radially outer edge of a substrate, and a first vertical surface extending downwardly from a radially inner edge of the third horizontal surface.

[0017] In other features, an annular groove is arranged on a lower and radially inner edge of the annular body. The first ceramic layer includes a cylindrical inner portion and an annular step extending from a lower and radially outer side of the cylindrical inner portion. The annular step extends into the annular groove.

[0018] In other features, the first ceramic layer includes an annular step and the edge ring includes an annular groove on a radially inner side thereof, wherein the annular step extends radially outwardly in a range from 5% to 25% of a radial width of the edge ring. A middle portion of the edge ring arranged above the second ceramic layer extends in a range from 40% to 90% of a radial width of the edge ring. A radially outer portion of the edge ring arranged above the sheath control ring extends in a range from 5% to 30% of a radial width of the edge ring.

[0019] A plasma processing system includes a substrate support including a baseplate. The substrate support includes a first ceramic layer including a cylindrical inner portion and an extended step. The extended step includes a first electrode configured to receive an RF bias. A bond layer attaches the first ceramic layer to the baseplate. An edge ring includes a radially inner portion extending above the extended step and a radially outer portion, wherein a bottom surface of the edge ring in the radially outer portion includes a threaded cavity configured to receive a mechanical clamp.

[0020] In other features, the edge ring includes an annular body including a first horizontal surface, a first sloped surface extending inwardly and radially downwardly from the first horizontal surface, a second horizontal surface extending radially inwardly from the first sloped surface below a radially outer edge of a substrate, and a first vertical surface extending downwardly from a radially inner edge of the second horizontal surface adjacent to a radially outer edge of the cylindrical inner portion.

[0021] In other features, the radially inner portion of the edge ring extends in a range from 60% to 90% of a radial width of the edge ring. The radially outer portion of the edge ring extends in a range from 10% to 40% of a radial width of the edge ring. An RF source is connected to the first electrode. The RF source connected by a variable capacitor to the first electrode.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA

[0022] A plasma processing system includes a substrate support including a baseplate, a first ceramic layer including a cylindrical inner portion and an extended step, wherein the extended step includes a first electrode configured to receive an RF bias, and a bond layer attaching the first ceramic layer to the baseplate. An edge ring is arranged above the extended step and including an annular body including a first horizontal surface, a first sloped surface extending inwardly and radially downwardly from the first horizontal surface, a second horizontal surface extending radially inwardly from the first sloped surface below a radially outer edge of a substrate, and a first vertical surface extending downwardly from a radially inner edge of the second horizontal surface adjacent to a radially outer edge of the cylindrical inner portion. The extended step extends in a range from 60% to 100% of a radial width of the edge ring.

[0023] In other features, an RF circuit including an RF source coupled to the first electrode and a variable capacitor coupling the RF source to the baseplate. A second electrode is arranged in the extended step configured to receive a DC bias to chuck the edge ring. The first electrode is configured to receive a DC bias to chuck the edge ring. A bottom surface of the edge ring includes a cavity for receiving a cooling gas. The cavity of the edge ring includes a plurality of annular seal bands. The cavity includes a plurality of mesas. A top surface of the extended step includes a cavity for receiving a cooling gas. The cavity includes a plurality of annular seal bands. The cavity includes a pattern of mesas.

[0024] A substrate support includes a baseplate and a first ceramic layer made of a Johnsen-Rahbek (JR) material. An upper layer is deposited on a top surface of the first ceramic layer, wherein the upper layer is made of a Coulombic material.

[0025] In other features, the first ceramic layer includes a cylindrical inner portion and an extended step projecting radially outwardly from a lower and radially outer side of the cylindrical inner portion. The upper layer is deposited on the first ceramic layer using chemical vapor deposition (CVD). The upper layer has a thickness in a range from 50 pm to 200 pm. The upper layer defines a cavity for receiving cooling gas. The upper layer includes a plurality of mesas arranged in the cavity. The upper layer includes a plurality of annular seal bands in the cavity. The plurality of annular seal bands define a plurality of cooling gas zones in the cavity. The upper layer includes a plurality of cooling gas grooves in the cavity.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA

[0026] The upper layer is machined to define one or more features selected from a group consisting of a cavity, a mesa, an annular seal band, and a cooling gas groove.

[0027] In other features, the upper layer is patterned to define one or more features selected from a group consisting of a cavity, a mesa, an annular seal band, and a cooling gas groove. The extended step projects radially outwardly from the cylindrical inner portion in a range from 5% to 25% of a diameter of the cylindrical inner portion.

[0028] In other features, a first electrode arranged in the extended step and configured to receive an RF bias. The first electrode is configured to receive a DC bias to attract the edge ring. A second electrode is arranged in the extended step and configured to receive a DC bias to attract the edge ring. A top surface of the extended step includes a cavity for receiving a cooling gas. The cavity includes a plurality of annular seal bands. The cavity includes a plurality of mesas.

[0029] A plasma processing system includes a substrate support including a baseplate, a first ceramic layer including a cylindrical inner portion and an extended step extending radially outwardly from the cylindrical inner portion, and a bond layer attaching the first ceramic layer to the baseplate. An edge ring includes an annular body including a radially inner portion arranged above the extended step and a radially outer portion, a first annular groove arranged adjacent to a radially inner side of a bottom surface of the edge ring, a first cavity configured to receive a mechanical clamp and arranged on the bottom surface of the edge ring in the radially outer portion, and a second annular groove arranged in the radially inner portion adjacent to the first cavity. A first annular seal is arranged in the first annular groove between the first annular groove and a top surface of the extended step. A second annular seal is arranged in the second annular groove between the second annular groove and the top surface of the extended step.

[0030] In other features, a first electrode arranged in the extended step and configured to receive an RF bias. A bottom surface of the edge ring includes a second cavity for receiving a cooling gas. The bottom surface of the edge ring includes a plurality of annular seal bands. The bottom surface of the edge ring includes a plurality of mesas. A top surface of the extended step includes a second cavity for receiving a cooling gas. The top surface of the extended step includes a plurality of annular seal bands. The top surface of the extended step includes a plurality of mesas. The extended step projects radially outwardly from the cylindrical inner portion in a range from 60% to 90% of a radial width of the edge ring.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA

[0031] A plasma processing system includes a substrate support including a baseplate, a first ceramic layer including a cylindrical inner portion and an extended step, and a bond layer attaching the first ceramic layer to the baseplate. An edge ring includes an annular body including a bottom surface with a cavity configured to receive a mechanical clamp. The extended step extends in a range from 40% to 90% of a radial width of the edge ring.

[0032] In other features, the baseplate includes an annular step arranged on an upper and radially outer side thereof. An annular seal is arranged between the annular step of the baseplate and a bottom surface of the extended step.

[0033] In other features, a first electrode arranged in the extended step configured to receive an RF bias. The edge ring includes a first annular groove arranged at a radially inner side of the bottom surface, a second annular groove arranged on the bottom surface, a first seal arranged in the first annular groove between the first annular groove and a top surface of the extended step; and a second seal arranged in the second annular groove between the second annular groove and the top surface of the extended step.

[0034] In other features, the bottom surface of the edge ring includes a cavity for receiving a cooling gas. The bottom surface of the edge ring includes a plurality of annular seal bands. The bottom surface of the edge ring further includes a plurality of mesas. A top surface of the extended step includes a cavity for receiving a cooling gas. The top surface of the extended step includes a plurality of annular seal bands. The top surface of the extended step includes a plurality of mesas. The extended step projects radially outwardly from the cylindrical inner portion in a range from 40% to 90% of a diameter of the edge ring.

[0035] A plasma processing system includes a substrate support including a first baseplate including a cylindrical body and a first set of cooling channels, a first ceramic layer, and a bond layer bonding the first ceramic layer to the first baseplate. An edge ring support including a second baseplate including an annular body and a second set of cooling channels arranged in the annular body, a second ceramic layer including a flat annular body, and a bond layer bonding the second ceramic layer to a top surface of the second baseplate.

[0036] In other features, the first ceramic layer includes a cylindrical inner portion and an annular step extending radially outwardly from a lower and radially outer side thereof. A bottom surface of the edge ring overlaps the annular step and the second ceramicAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAlayer. An electrode arranged in the second ceramic layer configured to receive a DC bias for attracting the edge ring. A first chiller configured to supply liquid coolant to the first set of cooling channels. A second chiller is configured to supply liquid coolant to the second set of cooling channels.

[0037] In other features, the first chiller configured to supply liquid coolant to one of the first set of cooling channels and the second set of cooling channels, wherein the first set of cooling channels and the second set of cooling channels are connected in series. An RF source is connected to the second baseplate. A variable capacitor couples the RF source to the first baseplate.

[0038] A plasma processing system includes a substrate support including a first baseplate including a cylindrical body and a first set of cooling channels in the cylindrical body, a ceramic layer, and a bond layer bonding the ceramic layer to the first baseplate. An edge ring support including an annular body made of ceramic and arranged radially outside of the first baseplate, a first electrode arranged in the annular body, and a second set of cooling channels arranged in the annular body below the first electrode.

[0039] In other features, the ceramic layer includes a cylindrical inner portion and an extended step extending radially outwardly from a lower and radially outer side thereof. The extended step extends in a range from 40% to 90% of a radial width of an edge ring.

[0040] In other features, an edge ring including an annular body with a radially inner portion arranged on a top surface of the extended step and a radially outer portion arranged on a top surface of the edge ring support. The first electrode is configured to receive a DC bias for attracting the edge ring. The first electrode is configured to receive an RF bias. The first electrode is configured to receive an RF bias and a DC bias for attracting the edge ring.

[0041] In other features, a first chiller is configured to supply liquid coolant to the first set of cooling channels. A second chiller is configured to supply liquid coolant to the second set of cooling channels. A first chiller is configured to supply liquid coolant to one of the first set of cooling channels and the second set of cooling channels. The first set of cooling channels and the second set of cooling channels are connected in series.

[0042] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description andAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAspecific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0043] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0044] FIG. 1 is a functional block diagram of an example of a substrate processing system including an electrostatic chuck (ESC) according to the present disclosure;

[0045] FIGS. 2 and 3 are side cross sections of examples of substrate supports including a ceramic layer, a baseplate, and an edge ring that is mechanically clamped according to the present disclosure;

[0046] FIG. 4 is a side cross section of an example of a substrate support including a ceramic layer, a baseplate, an edge ring that is mechanically clamped, and annular seals according to the present disclosure;

[0047] FIGS. 5A and 5B are side cross sections of examples of substrate supports including a baseplate, a first ceramic layer arranged above the baseplate and below a substrate, and a second ceramic layer arranged above the baseplate and below an edge ring according to the present disclosure;

[0048] FIGS. 6 to 13 are side cross sections of examples of substrate supports including a ceramic layer, a baseplate, and an edge ring according to the present disclosure; and

[0049] FIGS. 14 to 17 are side cross sections of examples of chillers connected to baseplates of substrate supports according to the present disclosure.

[0050] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0051] The present disclosure relates to substrate supports (e.g., electrostatic chucks), edge rings, edge ring chucks, and / or baseplate cooling systems that provide improved temperature uniformity during plasma processing, improved control of a plasma sheath at the edge of the substrate, reduced arcing in cooling gas holes, and / or increased protection of a bond layer from erosion.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA

[0052] In examples described in FIGS. 2 to 4, an edge ring is arranged radially outside of a top ceramic layer of a substrate support that supports a substrate. The edge ring is located above a radially outer portion of the baseplate. A lower and radially inner portion of the edge ring includes an annular groove configured to receive an annular step of a top ceramic layer. The interface between the annular step of the top ceramic layer and the annular groove of the edge ring improves temperature performance at the edge of the substrate. A radially outer portion of the edge ring is mechanically clamped to the upper surface of the baseplate and an upper surface of a sheath control ring. A thermal interface material or a thermally conductive gasket is arranged between the edge ring and the baseplate to increase temperature uniformity.

[0053] In other examples, a flat annular shim is arranged between a downwardly-facing surface of the annular groove of the edge ring and an upper surface of the annular step of the ceramic layer. The flat annular shim prevents plasma and / or process chemistry from passing through gaps and reaching a bond layer. A thermal interface material is arranged between the edge ring and the baseplate to improve temperature performance at the edge of the substrate.

[0054] In some examples, annular seals are arranged between radially inner and outer sides of the edge ring to provide inner and outer seals against the annular step of the ceramic layer and the upper surface of the baseplate, respectively. Cooling gas is supplied to a cavity between the edge ring and the baseplate between the annular seals. The annular seals prevent plasma and process chemistry from reaching the bond layer and restrict outflow of the cooling gas.

[0055] In examples described in FIGS. 5A and 5B, a flat annular ceramic layer is arranged above a radially outer portion of the baseplate. The flat annular ceramic layer is located radially outside of an annular step of a top ceramic layer supporting the substrate. A radially inner portion of an edge ring is arranged above the annular step of the ceramic layer and a middle portion of the edge ring is located above the flat annular ceramic layer. The flat annular ceramic layer includes an electrode for receiving a DC bias to selectively chuck the edge ring. The same electrode can also receive an RF bias or a second electrode can be provided in the flat annular ceramic layer. The RF bias can be supplied by shorting the electrode to the baseplate or a separate bias can be supplied. A sheath control ring including an embedded electrode is arranged under a radially outer portion of the edge ring.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA

[0056] In FIGS. 6 to 13, the top ceramic layer includes a cylindrical inner portion and an extended step extending radially outwardly from the cylindrical inner portion. In some examples, the edge ring is mechanically clamped. In some examples, the extended step includes an electrode receiving an RF bias.

[0057] In other examples, the electrode (or a second electrode in the extended step) receives a DC bias to chuck the edge ring (instead of mechanical clamping). In some examples, a thermal interface material is arranged between the edge ring and the extended step. In other examples, one of a bottom surface of the edge ring or a top surface of the extended step includes a cavity for receiving cooling gas. The one of the bottom surface of the edge ring or the top surface of the extended step may further include annular seal bands to define one or more cooling gas zones and / or mesas to provide additional contact area for cooling.

[0058] Different clamping forces can be used for the substrate and the edge ring. In some examples, the top ceramic layer is made of a Johnsen-Rahbek (JR) material. An upper layer of Coulombic material is patterned and deposited (or deposited and machined) on the top surface of the cylindrical inner portion. The top surface of the Coulombic material is patterned or machined to define cavities for cooling gas, mesas, cooling gas grooves, cooling gas holes, and / or annular seal bands.

[0059] In FIGS. 14 to 17, cooling channels for receiving cooling fluid are provided in an edge ring baseplate or ceramic ring arranged below the edge ring to improve temperature control of the edge ring. In some examples, a radially inner edge of the edge ring extends radially inwardly above an extended step of the ceramic layer above the substrate baseplate. In some examples, a radially outer portion of the edge ring is supported above a flat annular ceramic layer. The flat annular ceramic layer is attached to the edge ring baseplate that includes cooling channels. The cooling channels in the baseplate and the edge ring baseplate can be connected in series or separate chillers can be used. An RF source can be connected to the edge ring baseplate. The substrate baseplate can be connected by a variable capacitor to the RF source.

[0060] In other examples, an outer portion of the edge ring is supported above a ceramic ring including cooling channels and an electrode for receiving an RF bias.

[0061] Referring now to FIG. 1 , a substrate processing system 100 includes a processing chamber 102 including a gas distribution device 104 and a substrate support 106. In some examples, the substrate support 106 includes an electrostatic chuck (ESC).Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POADuring operation, a substrate 108 is arranged on the substrate support 106. If an ESC is used, the substrate support 106 includes a baseplate 110. In some examples, the baseplate 110 is made of a conducting material such as aluminum. The baseplate 110 supports a ceramic layer 112. A bond layer 114 is used to bond the ceramic layer 112 to the baseplate 110. The baseplate 110 may include one or more coolant channels 116 for flowing coolant through the baseplate 110. In some examples, one or more edge rings 118 are arranged around the substrate support 106 to shape the plasma sheath.

[0062] A gas delivery system 130 includes one or more gas sources 132-1 , 132-2, ..., and 132-N, where N is an integer. The gas sources 132 supply one or more process gas mixtures. For an etching process, the process gas mixture may include including carrier gas, inert gases, etching gas, etc. For a deposition process, the process gas mixture may include including carrier gas, inert gases, deposition precursor gases, etc. The gas sources 132 are connected by flow metering devices 134-1, 134-2, ..., and 134-N (e.g., mass flow controllers and valves) to a manifold 140. An output of the manifold 140 is fed to the gas distribution device 104. In some examples, a vapor delivery system 170 includes one or more vapor delivery sources that supply vapor to the manifold 140 or connect to the gas distribution device 104 downstream from the manifold 140. In some examples, the vapor delivery system 170 includes one or more ampoules 174, vaporizers 176, and flow metering devices 178 to controllably supply the vapor to the processing chamber.

[0063] In some examples, a temperature controller 142 is connected to heating elements 144 (e.g., thermal control elements (TCEs) or resistive heaters) arranged in the ceramic layer 112. The temperature controller 142 may be used to supply power to the heating elements 144 to control a temperature of the substrate support 106 and the substrate 108 during processing. The temperature controller 142 also operates a coolant assembly 146 that controls coolant flow through the coolant channels 116. For example, the coolant assembly 146 may include a coolant pump and coolant reservoir (not shown). The temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the coolant channels 116 to cool the substrate support 106.

[0064] A valve 150 and a pump 152 are used to control pressure within the processing chamber 102 and / or to evacuate reactants from the processing chamber 102. A gas source 151 and a flow controller 153 can be used to supply cooling gas such as heliumAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAor other cooling gas between the substrate 108 and a top surface of the ceramic layer 112. In some examples, the ceramic layer 112 includes one or more bores for inlet(s) and outlet(s) to supply cooling gas and one or more features such as circular seal bands, cooling gas grooves, and / or a pattern of mesas.

[0065] A plasma generator 154 includes a radio frequency (RF) source 156 to output RF voltage / power to a matching network 158. The matching network 158 matches the impedance of the RF source 156 to the impedance of the load including the processing chamber and plasma.

[0066] A controller 160 may be used to monitor system parameters and to control components of the substrate processing system 100 based on a recipe. One or more robots 161 may be used to deliver substrates onto, and remove substrates from, the substrate support 106. The gas distribution device 104 includes a gas plenum 191 that distributes gas from the gas delivery system 130 or vapor from the vapor delivery system 170 to gas through holes passing through an electrode 193 that is grounded.

[0067] One or more RF bias sources 195 can be used to supply RF bias(es) to an electrode in the top ceramic layer, an electrode arranged below the edge ring, and / or a sheath control ring (connections not shown in FIG. 1 ). One or more DC bias sources 197 can be used to supply DC bias(es) for chucking the substrate or other edge ring to an electrode in the top ceramic layer, an electrode in an extended step of the top ceramic layer, and / or an electrode in a flat annular ceramic layer arranged between the edge ring and a second baseplate (connections not shown in FIG. 1).

[0068] Referring now to FIG. 2, a substrate support 200 such as an electrostatic chuck 204 is shown. The electrostatic chuck 204 includes a baseplate 210 and a ceramic layer 214. A bond layer 218 bonds the ceramic layer 214 to a top surface of the baseplate 210. The ceramic layer 214 includes one or more RF bias electrodes 222 for providing an RF bias below a substrate 226. The ceramic layer 214 includes one or more DC electrodes 224 for selectively receiving a DC bias to chuck the substrate 226. In some examples, a single electrode can be used and biased by both RF bias and DC chucking biases rather than using separate electrodes.

[0069] In some examples, the ceramic layer 214 includes a cylindrical inner portion 230 and an annular step 232 extending radially outwardly from a lower portion of the cylindrical inner portion 230. In some examples, the annular step 232 extends less than 5%, 10%, 15%, or 20% of a diameter of the cylindrical inner portion 230. In someAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAexamples, portions of upper and / or side surfaces of the baseplate 210 include a spray coating 234. For example, the spray coating 234 may be located on a portion of the upper surface in regions located radially outside of the bond layer 218 and on side surfaces of the baseplate 210.

[0070] An edge ring 240 surrounds radially outer edges of the ceramic layer 214 and the substrate 226. The edge ring 240 includes an annular body 242 including a first horizontal surface 244. In some examples, the first horizontal surface 244 extends above and parallel to a plane including the substrate 226. The first horizontal surface 244 transitions in a radially inward direction to a first sloped surface 246. In some examples, the first sloped surface 246 forms an angle in a range from 25Qto 65Qrelative to a vertical direction. The first sloped surface 246 extends radially inwardly and downwardly to a second horizontal surface 248. In some examples, the second horizontal surface 248 lies in a horizontal plane parallel to and above a plane including a top surface of the substrate 226.

[0071] A second sloped surface 250 extends radially inwardly and downwardly from the second horizontal surface 248 below an edge of the substrate 226 to a third horizontal surface 254. The third horizontal surface 254 is located below a bottom surface of the substrate at a radially outer edge of the substrate 226. In some examples, the second sloped surface 250 forms an angle in a range from 20Qto 60Qrelative to a vertical direction. A radially inner vertical surface 256 extends downwardly adjacent to and along a radially outer edge of the ceramic layer 214 without contacting the radially outer edge of the ceramic layer 214. A lower end of the radially inner vertical surface 256 extends horizontally and radially outwards adjacent to and along an upper surface of annular step 232 of the ceramic layer 214 as shown at 257 defining a gap between the surface of the edge ring 240 shown at 257 and the upper surface of annular step 232 of the ceramic layer 214. The gap is relatively narrow and also prevents by-product / polymer deposition in the gap.

[0072] An annular groove 258 is formed on a radially inner and lower edge of the edge ring 240 to provide clearance for the annular step 232 of the ceramic layer 214 and to create a labyrinth interface. As can be appreciated, the labyrinth interface prevents line of sight to plasma to protect the bond layer 218.

[0073] A horizontal surface 260 of the edge ring 240 extends radially outwardly from the annular groove 258 above the baseplate 210. The horizontal surface 260 abuts a verticalAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAsurface 262 to create a downward annular step adjacent to a radially outer edge of the baseplate 210. The vertical surface 262 transitions to a horizontal surface 264 corresponding to the bottom surface of the edge ring 240 that extends to a radially outer surface 270 thereof.

[0074] The horizontal surface 264 of the edge ring 240 abuts a sheath control ring 272 surrounding the baseplate 210. In some examples, the sheath control ring 272 is made of a non-conductive or dielectric material including an embedded electrode 273. The embedded electrode 273 of the sheath control ring 272 receives an RF bias to adjust the plasma sheath during operation.

[0075] In some examples, a threaded cavity 266 extends upwardly into the horizontal surface 264 of the edge ring 240. The threaded cavity 266 is configured to receive a threaded bolt 268 (including a shaft) that is connected to a mechanical actuator (not shown) to selectively apply downward mechanical force on the edge ring 240. When downward mechanical force is applied, the edge ring 240 is biased downwardly against upper surfaces of the sheath control ring 272 and the baseplate 210.

[0076] In some examples, a thermal interface material 282 is located in a gap between the horizontal surface 260 of the edge ring 240 and the baseplate 210 to facilitate heat transfer between the edge ring 240 and the baseplate 210 (which is temperature controlled). The horizontal surface 260 is located above the baseplate 210 and the horizontal surface 264 is located above the sheath control ring 272. The thermal interface material 282 located between the horizontal surface 260 and the baseplate 210 facilitates cooling of the edge ring 240. The stepped shape of the annular step 232 of the ceramic layer 214 provides additional area that is in contact with the baseplate 210.

[0077] The overlap between the horizontal surface of the edge ring 240 in the annular groove 258 and the top surface of the annular step 232 improves temperature uniformity of the edge ring 240 at the edge of the substrate 226. The thermal interface material 282 below the edge ring 240 also improves the temperature uniformity of the edge ring 240. The sheath control ring 272 at the outer portion of the edge ring 240 enables adjustment of the plasma sheath.

[0078] In some examples, the annular step 232 extends radially outwardly below greater than 5% and less than 25% of a radial width of the edge ring 240. In some examples, the sheath control ring 272 is arranged below greater than 5% and less than 30% of a radialAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAwidth of the edge ring 240. In some examples, 45% to 90% of a middle portion of the edge ring is arranged above the thermal interface material 282.

[0079] Referring now to FIG. 3, a substrate support 300 and an edge ring 312 are similar to the substrate support 200 and edge ring 240 depicted in FIG. 2. It is difficult to perfectly manufacture large annular surfaces that abut (such as the horizontal surface of the edge ring 240 in the annular groove 258 and the top surface of the annular step 232). The mating surfaces need to be sufficiently flat, complementary, or otherwise matched to prevent plasma and / or other process chemistry from passing through gaps between the mating surfaces. The mating surfaces are made of ceramic which does not deform sufficiently during mechanical clamping to close the gaps.

[0080] In the substrate support in FIG. 3, an annular shim 310 (including a flat annular body) is arranged between the horizontal surface of the annular groove 258 and the top surface of the annular step 232. In some examples, the annular shim 310 is at least partially compressed by the downward mechanical clamping force to fill gaps therebetween and create a more robust seal between the horizontal surface of the annular groove 258 and the top surface of the annular step 232. As a result, it is less likely that plasma and / or process chemistry is able to pass through gaps in this region and erode the bond layer 218 or other chamber components. In some examples, the annular shim 310 is made of a material that is compressible and / or plasma resistant. In some examples, the annular shim 310 is made of fluoropolymer, elastomer, fluoropolymer / elastomer, or other suitable materials.

[0081] Referring now to FIG. 4, a substrate support 350 and edge ring 352 are similar to the substrate support 200 and edge ring 240 shown in FIG. 2. In this example, a lower and radially inner edge of the edge ring 352 includes a first annular groove 356 and a second annular groove 358. The second annular groove 358 is arranged below and extends radially inwardly relative to the first annular groove 356. The annular step 232 extends radially outwardly into the second annular groove 358.

[0082] An annular cavity 360 is defined between the top surface of the annular step 232 and a horizontal surface of the first annular groove 356. The first annular groove 356 and the second annular groove 358 define a stepped surface 361 on a lower and radially inner surface of the edge ring 352. A horizontal surface in the second annular groove 358 abuts a top surface of a radially outer portion of the annular step 232 at a location radially outside of the annular cavity 360. The contact between the annular step 232 andAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAhorizontal surface in the second annular groove 358 improves temperature performance and uniformity at the edge of the substrate.

[0083] An annular seal 362 having an annular body is arranged in the annular cavity 360. The annular seal 362 is at least partially compressed between the bottom surface of the annular groove 258 and the upwardly-facing surface of the annular step 232 when the edge ring 352 is mechanically clamped. In some examples, the annular seal 362 has a rectangular, trapezoidal, circular, or elliptical cross section, although other cross sectional shapes can be used.

[0084] An annular groove 370 extends upwardly into the horizontal surface 260 between the horizontal surface 260 and the vertical surface 262. The annular groove 370 receives and positions an annular seal 374. The annular seal 374 has an annular body compressed between a horizontal surface in the annular groove 370 and the upwardly-facing surface of the baseplate 210 (or spray coating 234) adjacent to a radially outer edge of the baseplate 210. In some examples, the annular seal 362 and the annular seal 374 are made of a plasma resistant material and have a rectangular, trapezoidal, circular, or elliptical cross section, although other cross sectional shapes can be used.

[0085] The annular seal 362 and the annular seal 374 prevent plasma and / or process chemistry from passing through boundaries between the edge ring 352, the ceramic layer 214 and the baseplate 210. A bore 380 passes through the baseplate 210 and the spray coating 234 to supply a cooling gas such as helium (He) from a cooling gas source 382 via an optional flow metering device 383. The annular seals 362 and 374 also provide a barrier to restrict outflow of the cooling gas supplied below the edge ring 240.

[0086] Referring now to FIGS. 5A and 5B, a substrate support 400 includes an edge ring 410 that surrounds the ceramic layer 214 and the substrate 226. The edge ring 410 includes an annular body 412 including first horizontal surface 414 that transitions in a radially inward direction to a first sloped surface 416, a second horizontal surface 418, a second sloped surface 420, a third horizontal surface 424, and a radially inner vertical surface 426 in a manner similar to that described above.

[0087] In some examples, at least part of the third horizontal surface 424 is located below a radially outer edge of the substrate 226. An annular groove 428 is formed on a radially inner and lower edge of the edge ring 410 to contact and / or provide clearance for the annular step 232 of the ceramic layer 214. As can be appreciated, the annular groove 428 and the annular step 232 define a labyrinth interface to prevent direct line of sight toAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAplasma to protect the bond layer 218. The edge ring 410 includes a horizontal surface 430 that extends radially outwardly from the annular groove 428 above the baseplate 210. A radially outer surface 434 extends from the horizontal surface 430 to the upper surface of the edge ring 410.

[0088] A second ceramic layer 440 is attached to the baseplate 210 radially outside of the ceramic layer 214. The second ceramic layer 440 includes a flat annular body with an electrode 442 embedded therein. The electrode 442 receives a DC bias for chucking the edge ring and / or an electrode 444 receives an RF bias to adjust the plasma sheath. A bond layer 448 bonds the second ceramic layer 440 to the spray coating 234 and / or directly to a top surface of the baseplate 210. A sheath control ring 460 is located radially outside of the baseplate 210. In some examples, the sheath control ring 460 includes a dielectric material with an electrode 464 embedded therein. In some examples, a seal 465 such as an “O”-ring that is made of a plasma resistant material is arranged between a radially inner side of the edge ring 410 and a radially outer side of the annular step 232 to prevent plasma from attacking the bond layer 218.

[0089] In FIG. 5A, a top surface of the second ceramic layer 440 located below the edge ring 410 includes a cavity 441 for receiving cooling gas via the bore 380 passing through the baseplate 210 and the second ceramic layer 440. In some examples, the top surface of the second ceramic layer 440 may include two or more annular seal bands 443 for defining one or more cooling gas zones (if additional cooling gas zones are provided, additional seal bands and bores 380 may be provided to supply different cooling gas pressures). In some examples, the top surface of the second ceramic layer 440 may include mesas 445 located between the annular seal bands 443 to increase contact area and improve cooling efficiency. In some examples, the mesas 445 have a cylindrical cross section, although other suitable cross sections may be used.

[0090] In FIG. 5B, the horizontal surface 430 of the edge ring 410’ includes a cavity 451 (e.g., located above the second ceramic layer 440 but not the sheath control ring 460) for receiving cooling gas. In some examples, the bottom surface of the edge ring 410’ may include two or more annular seal bands 453 for defining one or more cooling gas zones (if additional cooling gas zones are provided, additional bores 380 may be provided to supply different cooling gas pressures). In some examples, the bottom surface of the edge ring 410’ may include a pattern of mesas 455 located between the annular sealAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAbands 453. In some examples, the mesas 455 have a cylindrical cross section, although other suitable cross sections may be used.

[0091] Separate electrodes 442 and 444 can be used in the second ceramic layer 440 for a DC bias for clamping and an RF bias, respectively, as shown in FIG. 5A. In FIG. 5B, the second ceramic layer 440 includes an electrode 470 for both DC and RF biases during processing rather than separate electrodes. In some examples, the second ceramic layer 440 has an axial thickness that is less than an axial thickness of the annular step.

[0092] In some examples, the annular step 232 extends radially outwardly below greater than 5% and less than 25% of a radial width of the edge ring 410. In some examples, the sheath control ring 460 is arranged below greater than 5% and less than 30% of a radial width of the edge ring 410. In some examples, 45% to 90% of a middle portion of the edge ring 410 is arranged above the second ceramic layer 440.

[0093] Referring now to FIG. 6, a substrate support 500 is shown. The substrate support 500 includes a baseplate 510 and a ceramic layer 514 including cylindrical inner portion 516 and an extended step 518. The extended step 518 projects radially outwardly from a lower and radially outer portion of the cylindrical inner portion 516 above the baseplate 510 and below an edge ring 520.

[0094] The edge ring 520 includes a first horizontal surface 521 extending parallel to and above a substrate plane and a sloped surface 522 extending inwardly and downwardly at an acute angle below the substrate plane. The sloped surface 522 is connected to a second horizontal surface 523 extending radially inwardly below a radially outer edge of the substrate 517. A radially inner vertical surface 524 extends downwardly from the second horizontal surface 523 along a radially outer surface of the cylindrical inner portion 516. The radially inner vertical surface 524 and at least a portion of the second horizontal surface 523 are arranged below the substrate 517.

[0095] A third horizontal surface 525 of the edge ring 520 corresponds to a bottom surface of the edge ring 520. The third horizontal surface 525 extends radially outwardly above and radially outwardly beyond the extended step 518. A radially outer surface 526 corresponds to a radially outer side of the edge ring 520 that extends vertically between the third horizontal surface 525 and the first horizontal surface 521. In this example, a radially outer portion of the third horizontal surface 525 of the edge ring 520 includes a threaded cavity 527 extending upwardly configured to receive a threaded bolt 583 toAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAmechanically clamp the edge ring 540. In some examples, a thermal interface material 587 is arranged between the bottom surface of the third horizontal surface 525 of the edge ring 520 and the extended step 518. The extended step 518 of the ceramic layer 514 includes an RF electrode 532 configured to receive an RF bias.

[0096] In some examples, the baseplate 510 includes a vertical bore 530 and the cylindrical inner portion 516 of the ceramic layer 514 includes a cavity 529 aligned with the vertical bore 530. A porous plug 531 is located in the cavity 529. The porous plug includes pores to allow gas flow while preventing line of sight through the porous plug 531 to the plasma. In some examples, the porous plug 531 is made of ceramic.

[0097] A cavity 533 extends upwardly above the porous plug 531. Gas distribution channels or holes 553 extend from the cavity 533 to a cavity defined below the substrate 517. Cooling gas such as He is delivered from a cooling gas source 535 and an optional flow metering device 537 (such as a valve and / or a mass flow controller) to the cavity 536 defined on a top surface of the cylindrical inner portion 516 of the ceramic layer 514 below the substrate 517. In some examples, the top surface of the cylindrical inner portion 516 of the ceramic layer 514 includes features such as annular seal bands 538, cooling gas grooves (e.g., examples shown in FIG 11 B), and / or patterns of mesas 585 to define one or more cooling gas zones that can be supplied at one or more cooling gas pressures. The cylindrical inner portion 516 includes DC electrodes 561 and / or RF electrodes 563.

[0098] In some examples, an RF source 549 is connected by a connector 545 to the electrode 532. In some examples, the connector 545 includes a conductor 542 arranged inside of an insulating material 543 arranged in a bore 544 in the baseplate 510 to isolate the conductor 542 from the baseplate 510 so that they can be at different potentials. In some examples, the conductor 542 includes a “U-shaped” upper portion 542-U and a straight lower portion 542-L. Seals 542-S such as “O”-ring seals can be used to provide a seal around a bottom surface of the “U-shaped” upper portion 542-U. The seals 542-S are compressed to form a seal and bias the “U-shaped” upper portion 542-U against a conductor 547 to maintain a connection. The conductor 547 connects the conductor 542 to the electrode 532.

[0099] In some examples, the conductor 547 includes one or more strands of wire (e.g., gold-plated beryllium copper wire) that are compressed into a dense, sponge-like cylindrical shape. In some examples, the conductor 547 includes a Fuzz Button™Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAconnector although other types of connectors can be used. Additional examples of connectors for the RF (and / or DC) electrodes can be found in commonly assigned U.S. Provisional Patent Application No. 63 / 672,683, filed on July 17, 2024 (Lam Docket No.11698-1 US), which is hereby incorporated by reference in its entirety.

[0100] In some examples, the RF source 549 is also connected to the baseplate 510 by a variable capacitor Cvar. In other examples, a separate RF source (not shown) is connected to the baseplate 510. In some examples, the baseplate 510 is connected to the RF electrode 563 by a conductor 539 arranged in a cavity 541 in a bottom surface of the ceramic layer 514. The conductor 539 shorts the RF electrode 563 to the baseplate 510.

[0101] In some examples, the extended step 518 extends radially outwardly below 60% to 90% of a radial width of the edge ring 520. In some examples, a sheath control ring (e.g., as shown in FIG. 2) is arranged below greater than 10% and less than 40% of a radial width of the edge ring 520. In other examples, the sheath control ring is omitted.

[0102] Referring now to FIGS. 7A to 10, cooling gas such as helium (He) or other suitable cooling gas can be used to cool the edge ring 520. In FIGs. 7A and 7B, the edge ring 520 can be chucked rather than mechanically clamped as described in FIG. 6. In FIG. 7A, the extended step 518 of the ceramic layer 514 of a substrate support 570 further includes one or more DC electrodes 574 arranged therein to receive a DC bias to chuck the edge ring 520. The baseplate 510 includes a bore 572 configured receive a cooling gas. The extended step 518 includes a cavity 573 configured to receive a porous plug 531. Cooling gas is supplied through the bore 572 and the porous plug 531 defined between the edge ring 520 and the extended step 518.

[0103] In FIG. 7B, a substrate support 590 of the extended step 518 can optionally include a single electrode 592 that receives both the DC bias and the RF bias.

[0104] In some examples, the extended step 518 extends radially outwardly below 60% to 100% of a radial width of the edge ring 520.

[0105] In FIG. 8, the top surface of the extended step 518 of a substrate support 600 includes a cavity 610 for receiving cooling gas. In some examples, the top surface of the extended step 518 defines annular seal bands 611 and 613 that are arranged at radially inner and outer edges of the cavity 610. The annular seal bands 611 and 613 contact a bottom surface of the edge ring 520. While a single gas zone is shown, additional annularAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAseal bands may be arranged between the outer annular seal bands 611 and 613 to define one or more additional cooling gas zones that may be supplied at different gas pressures to vary cooling within multiple zones. As can be appreciated, mesas 617 (e.g., as shown in FIG. 11 B) may be arranged between adjacent annular seal bands to increase contact area in a particular cooling gas zone. The top surface of the extended step 518 may include cooling gas holes and cooling grooves (similar to cooling gas holes and cooling grooves shown in FIG. 11 B) to supply and distribute the cooling gas.

[0106] In FIG. 9, another substrate support 630 is shown. The third horizontal surface 525 of an edge ring 632 further includes a cavity 634 configured to receive cooling gas. In some examples, the cavity 634 is defined between annular seal bands 635 and 637 located at radially inner and outer sides of the third horizontal surface 525, respectively, of the edge ring. The cavity 634 may include mesas 639 to increase surface area contact. The top surface of the extended step 518 may include cooling gas holes and cooling grooves (similar to cooling gas holes and cooling grooves shown in FIG. 11 B) to supply and distribute the cooling gas.

[0107] In FIG. 10, another substrate support 650 is shown. The third horizontal surface 525 of an edge ring 652 further optionally includes one or more annular seal bands 653 arranged between the annular seal bands 635 and 637 to define one or more additional cooling gas zones. Mesas 639 are arranged between the annular seal bands to provide additional contact area for cooling. The top surface of the extended step 518 may include cooling gas holes and cooling grooves (similar to cooling gas holes and cooling grooves shown in FIG. 11 B) to supply and distribute the cooling gas.

[0108] Referring now to FIGS. 11 A and 11 B, different types of chucking materials can be used to provide different clamping forces on the substrate and the edge ring. The edge ring remains stationary in the processing chamber when sequentially processing substrates. However, the substrates are delivered, processed, removed, and replaced with the next substrate. Therefore, clamping the substrate with less force than the edge ring allows the edge ring to be more readily held in place for long periods while the substrates are held sufficiently for shorter periods.

[0109] In FIG. 11 A, a substrate support 700 includes a ceramic layer 714 (including the cylindrical inner portion 516 and the annular step or the extended step 518) that is made of a Johnsen-Rahbek (JR) material (associated with higher clamping force at a predetermined DC bias). A Coulombic material layer 710 is deposited on an upperAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAsurface of the cylindrical inner portion 516 below the substrate 517 to provide reduced clamping force on the substrate 517.

[0110] When the substrate support is configured in this manner, the substrate support 700 employs two types of electrostatic clamping. The substrate 517 is clamped using Coulombic clamping force while the edge ring 520 is clamped using JR clamping force. The lower Coulombic clamping force clamps the substrates, which are delivered and removed from the substrate support frequently during sequential processing. The higher JR clamping force clamps the edge ring, which remains stationary in the processing chamber during sequential processing until replacement.

[0111] In some examples, the JR material comprises aluminum nitride (AIN) or another suitable JR material. In some examples, the Coulombic material layer 710 comprises AIN material having a higher resistance than the JR material. In some examples, the AIN in the Coulombic material layer 710 is doped with a doping material to increase the resistance above the resistance of the JR material. In some examples, the JR material has a resistance that is less than or equal to 1013Ohm-cm (Q-cm). In some examples, the Coulombic material layer 710 has a resistance that is greater than or equal to 1014O-cm.

[0112] In some examples, the Coulombic material layer 710 is deposited onto the top surface of the ceramic layer of the substrate support using chemical vapor deposition (CVD). In some examples, the Coulombic material layer 710 is deposited with a thickness in a range from 50 pm to 200 pm. In some examples, the top surface of the Coulombic material layer 710 is configured to include features such as annular seal bands 716 (forming one or more cooling gas zones), mesas 717, cooling gas grooves (e.g., FIG.11 B), and / or cooling gas outlets (e.g., FIG. 11 B). In some examples, the features 715 are patterned and deposited using CVD on the top surface. In other examples, the Coulombic material layer 710 is deposited and the features 715 are machined after deposition of a layer without the patterned features.

[0113] In FIG. 11 B, an example of a top surface of the Coulombic material layer 710 is shown. The Coulombic material layer 710 includes B annular seal bands 716-1 , 716-2, ..., and 716-N (collectively B annular seal bands 716) that are arranged concentrically. The B annular seal bands 716 project upwardly from a surface 720 by a predetermined distance. Areas between the B annular seal bands 716 define cooling gas zones 718-1 , 718-2, ..., and 718-M (collectively cooling gas zones 718), where M is an integer greaterAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAthan one. In some examples, M = B+1. Some or all of the cooling gas zones 718 include mesas 717 extending upwardly from the surface 720. The mesas 717 are typically arranged in concentric circles, although other patterns can be used. In some examples, the mesas 717 typically have a circular cross section, although other shapes can be used. Some or all of the cooling gas zones 718 include cooling gas grooves 726 extending below the surface 720 and cooling gas outlets 728 to supply cooling gas to the cooling gas zones.

[0114] Three or more lift pin holes 730 allow lift pins to be raised to receive a substrate delivered to the processing chamber and to lower or raise the substrate. In some examples, multiple sets of cooling gas grooves 726 are spaced circumferentially in each of the cooling gas zones 718. In some examples, each of the sets of the cooling gas grooves 726 includes one or more radial segments and one or more arcuate segments. In some examples, the cooling gas outlets 728 are located at intersections of the radial and arcuate segments.

[0115] During substrate processing, the substrate 517 is supported by the B annular seal bands 716 and the mesas 717. Cooling gas is supplied by one or more of the cooling gas outlets 728 to the cooling gas grooves 726 in the cooling gas zones 718. The cooling gas exchanges heat with a bottom surface of the substrate and exposed side surfaces of the B annular seal bands 716 and the mesas 724. The contact area between the seal bands and the mesas 724 and the substrate and the cooling gas pressure can also be used to control the temperature in corresponding zones of the substrate.

[0116] Referring now to FIGS. 12 and 13, annular seals can be used in various locations to prevent plasma attack on the bond layer and / or to provide a seal and form a cavity for the cooling gas supplied between the edge ring and the extended step 518. In FIG. 12, a substrate support 800 includes an edge ring 820 with an upper surface 821 and a sloped surface 822 extending radially inwardly and downwardly. A horizontal surface 823 extends radially inwardly from the sloped surface below a radially outer edge of the substrate 517. A radially inner vertical surface 824 is located below the substrate 517.

[0117] The edge ring 820 includes a bottom surface 825 (arranged above an upper surface of the extended step 518) and a radially outer surface 826. The edge ring 820 further includes a radially inner annular groove 830 located on a lower and radially inner side of the edge ring 820. The edge ring 820 further includes a radially outer annular groove 834 located on a lower and radially outer side of the edge ring 820. In thisAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAexample, the bottom surface 825 of the edge ring 820 includes a threaded cavity 581 for receiving the threaded bolt 583 as described above.

[0118] An annular seal 840 is arranged between the radially inner annular groove 830 and an upper surface of the extended step 518. An annular seal 844 is arranged between the radially outer annular groove 834 and an upper surface of the extended step 518. The annular seals 840 and 844 form a cooling gas cavity. The threaded bolt 583 acting as a mechanical clamp provides downward force to compress the annular seals 840 and 844 against the extended step 518. The annular seals 840 and 844 reduce plasma and / or process chemistry from entering an interface between the edge ring 520 and the extended step to reduce arcing and / or other problems.

[0119] An upper and radially outer edge of the baseplate 510 includes an annular groove 850 including a horizontal surface 851. An annular seal 852 is arranged between a bottom surface of the extended step 518 and the horizontal surface 851 of the annular groove 850 (and / or on a seal coat 853 arranged on the annular groove 850). The annular seal 852 protects a bond layer 855 attaching the ceramic layer 514 to a top surface of the baseplate 510. In some examples, the annular seal 852 is made of a plasma-resistant material such as fluoropolymer, elastomer, fluoropolymer / elastomer, or other suitable materials. In some examples, the annular seal 852 has a rectangular cross section, although other cross sections such as circular, elliptical, polygonal, trapezoidal, or other shapes can be used.

[0120] In FIG. 13, an annular seal 862 is arranged between the bottom surface of the extended step 518 and the horizontal surface 851 of the annular groove 850. In some examples, the annular seal 862 has a circular or elliptical cross section. In some examples, the annular seal includes an annular core 861 and an outer coating 863 including a plasma resistant material. In some examples, the plasma resistant material comprises polytetrafluoroethylene (PTFE). In FIGS. 12 and 13, either the edge ring or the top surface of the extended step may include a cavity, annular seal bands, cooling gas grooves, and / or mesas as described above.

[0121] Referring now to FIGS. 14 to 16, various cooling arrangements are shown for cooling both substrate chucks and edge ring chucks arranged below the substrate and edge ring, respectively. In FIG. 14, a substrate support 900 includes a first baseplate 904 and a first ceramic layer 908 supporting a substrate 902. The first ceramic layer 908 includes a cylindrical inner portion 913, an annular step 914 extending from the cylindricalAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAinner portion 913, DC and / or RF electrodes and / or heaters (not shown) as described above. The first ceramic layer 908 is attached by a bond layer 919 to a top surface of the first baseplate 910. The baseplate 910 includes one or more cooling channels 912 for receiving coolant such as liquid coolant. A substrate 902 rests on an upper surface of the first ceramic layer 908.

[0122] An edge ring 920 is arranged on a flat annular body of a second ceramic layer 924. The second ceramic layer 924 is attached by a bond layer 925 to a second baseplate 926. In some examples the second baseplate 926 is made of metal such as aluminum. The second ceramic layer 924 includes one or more electrodes 928 for DC and / or RF bias signals for clamping and / or plasma sheath control. The edge ring 920 includes a horizontal surface 931 located parallel to and above a substrate plate and a sloped surface 932 extending radially inwardly and downwardly from the horizontal surface 931 below the substrate plane. A horizontal surface 933 extends radially inwardly from the sloped surface 932 below the radially outer edge of the substrate 902. A vertical surface 934 extends vertically from a radially inner side of the horizontal surface 931 and along a radially outer side of the cylindrical inner portion. An annular step 935 is located on a bottom and radially inner edge of the edge ring 920. A horizontal surface of the annular step 935 contacts the top surface of the annular step 914. A bottom surface 936 of the edge ring 920 extends horizontally to a radially outer edge 937 of the edge ring 920.

[0123] In some examples, the cooling channels 912 of the first baseplate 910 and the fluid channels 941 of the second baseplate 926 are supplied in parallel by a first chiller 962 and a second chiller 964, respectively. The first chiller 962 supplies cooling liquid to the cooling channels 912 of the first baseplate 910. The second chiller 964 supplies cooling liquid to the fluid channels 941 of the second baseplate 926.

[0124] In some examples, flow controllers 1020 and 1030 control flow of coolant to the baseplates 904 and 926. In some examples, the flow controllers 1020 and 1030 include a pump, valves, and other devices for controlling a flow rate of liquid. Temperature sensors 1022 and 1032, respectively, sense temperatures in various locations such as an inlet, an outlet, and / or other locations. In some examples, the flow controllers 1020 and 1030 control the flow rate or temperature in response to the sensed temperature and / or a process recipe. In some examples, the temperatures of the substrate and edge ring are controlled to the same temperature (or different temperatures can be used). Since the substrate and the edge ring are experiencing different heat loads and haveAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAdifferent physical parameters, the separate cooling systems allow the respective temperatures to be controlled more accurately, which increases process uniformity.

[0125] In other examples (an example is shown in FIG. 15), a chiller 970 supplies coolant to both the cooling channels 912 of the first baseplate 910 and the fluid channels 941 of the second baseplate 926. The cooling channels 912 of the first baseplate 910 and the fluid channels 941 of the second baseplate 926 can be supplied in series or parallel (in either order). In some examples, the cooling fluid is supplied in series to the second baseplate 926 and then to the first baseplate 904 as shown in FIG. 15. In other words, the chiller 970 supplies cooling liquid to an inlet of the fluid channels 941 of the second baseplate 926. An outlet of the fluid channels 941 of the second baseplate 926 is connected to an inlet of the cooling channels 912 of the first baseplate 904. An outlet of the cooling channels 912 of the first baseplate 904 is in fluid communication with the chiller 970.

[0126] In FIG. 16, an arrangement similar to FIGS. 14 and / or 15 is shown. In this example, the first baseplate 910 is biased by an RF voltage source 960 and a variable capacitor Cvar. The second baseplate 926 is biased by the RF voltage source 960. The variable capacitor Cvar controls coupling between the first baseplate 904 and the second baseplate 926.

[0127] Referring now to FIG. 17, a substrate support 980 includes a ceramic layer 982 including an extended step 984 that extends radially below a radially inner portion of the edge ring 920 as described above. Instead of using another baseplate and ceramic layer as in FIGS. 14 to 16, a ceramic baseplate 990 including cooling channels 992 is used. A radially outer portion of the edge ring 920 is arranged above a top surface of the ceramic baseplate 990. In some examples, the ceramic baseplate 990 includes an embedded electrode 994 for controlling the plasma sheath. The cooling fluid can be supplied to the cooling channels 912 and 992 using any of the fluid supply and / or flow control approaches described herein.

[0128] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more stepsAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAwithin a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0129] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0130] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform, or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA

[0131] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, non-transitory memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for conducting a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0132] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controllerAttorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POAfor such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0133] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0134] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POACLAIMSWhat is claimed is:

1. An edge ring for a plasma processing system comprising:an annular body;a first horizontal surface of the annular body;a first sloped surface of the annular body extending inwardly and radially downwardly from the first horizontal surface;a second horizontal surface of the annular body extending radially inwardly from the first sloped surface;a second sloped surface of the annular body extending radially inwardly and downwardly from the second horizontal surface;a third horizontal surface of the annular body extending radially inwardly from the second sloped surface;a first vertical surface of the annular body extending downwardly from a radially inner edge of the third horizontal surface; anda cavity extending into the annular body and configured to receive a mechanical clamp.

2. The edge ring of claim 1 , wherein the annular body further comprises:a fourth horizontal surface extending radially outwardly from the first vertical surface;a second vertical surface extending downwardly from the fourth horizontal surface; anda fifth horizontal surface extending radially outwardly from the second vertical surface.

3. The edge ring of claim 2, further comprising a second vertical surface extending upwardly from the fifth horizontal surface to the first horizontal surface.

4. The edge ring of claim 3, wherein the cavity extends upwardly into the fifth horizontal surface.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA5. The edge ring of claim 2, further comprising an annular groove located between the first vertical surface and the fourth horizontal surface.

6. A system comprising:the edge ring of claim 5;a substrate support including a baseplate, a ceramic layer including a cylindrical portion and an annular step, and a bond layer bonding the ceramic layer to a radially inner portion of the baseplate, wherein the annular step is received in the annular groove; anda thermal interface layer arranged between a radially outer portion of the baseplate and the annular body.

7. The system of claim 6, wherein the annular step extends radially outwardly in a range from 5% to 25% of a radial width of the edge ring.

8. The system of claim 6, wherein a middle portion of the edge ring arranged above the thermal interface layer extends in a range from 40% to 90% of a radial width of the edge ring.

9. The system of claim 6, further comprising a sheath control ring arranged around a radially outer side of the baseplate and below a radially outer portion of the annular body.

10. The system of claim 9, wherein the sheath control ring extends below the edge ring in arrange from 5% to 30% of a radial width of the edge ring.

11. The system of claim 9, wherein the sheath control ring includes a bore configured to reciprocally receive a shaft of the mechanical clamp.

12. The system of claim 6, wherein a middle portion of the edge ring arranged above the thermal interface layer extends in a range from 40% to 90% of a radial width of the edge ring.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA13. A system comprising:a substrate support including a baseplate, a ceramic layer including a cylindrical portion and an annular step, and a bond layer bonding the ceramic layer to a radially inner portion of the baseplate;the edge ring of claim 5; andan annular shim including a flat annular body arranged between a horizontal surface in the annular groove and an upper surface of the annular step of the ceramic layer.

14. The system of claim 13, wherein the annular shim is made of a plasma resistant material.

15. The system of claim 13, wherein the annular step extends radially outwardly in a range from 5% to 25% of a radial width of the edge ring.

16. A system comprising:a substrate support including a baseplate, a ceramic layer including a cylindrical portion and an annular step, and a bond layer bonding the ceramic layer to a radially inner portion of the baseplate;the edge ring of claim 5, wherein the fourth horizontal surface of the edge ring further comprises a cavity; anda first annular seal arranged between the annular step and an upper surface of the radially projecting portion of the ceramic layer; anda second annular seal arranged in the cavity.

17. The system of claim 16, further comprising:a cavity at least partially defined between the edge ring and an upper surface of the baseplate;a bore in the baseplate including an outlet in fluid communication with the cavity; anda cooling gas source configured to supply cooling gas to the cavity.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA18. A plasma processing system comprising:a substrate support including:a baseplate;a first ceramic layer; anda first bond layer bonding the first ceramic layer to the baseplate;a second ceramic layer including a flat annular body attached by a second bond layer to an upper surface of the baseplate at a location radially outside of the first ceramic layer; andan edge ring including a bottom surface with a radially inner portion and a radially outer portion,wherein the radially inner portion of the edge ring is arranged above the second ceramic layer.

19. The plasma processing system of claim 18, further comprising a sheath control ring arranged around a radially outer side of the baseplate and below the radially outer portion of the edge ring.

20. The plasma processing system of claim 18, wherein the second ceramic layer includes a first embedded electrode configured to receive a DC chucking bias.

21. The plasma processing system of claim 20, wherein the first embedded electrode is further configured to receive an RF bias.

22. The plasma processing system of claim 20, wherein the second ceramic layer includes a second embedded electrode configured to receive an RF bias.

23. The plasma processing system of claim 18, wherein the baseplate and the second ceramic layer include a bore configured to deliver gas to a cavity defined in one of an upper surface of the second ceramic layer and a bottom surface of the edge ring.

24. The plasma processing system of claim 18, wherein the one of the upper surface of the second ceramic layer and the bottom surface of the edge ring includes a plurality of mesas.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA25. The plasma processing system of claim 18, wherein the one of the upper surface of the second ceramic layer and the bottom surface of the edge ring includes two or more annular seal bands.

26. The plasma processing system of claim 18, wherein the edge ring comprises: an annular body;a first horizontal surface of the annular body;a first sloped surface extending radially inwardly and downwardly from the first horizontal surface;a second horizontal surface extending radially inwardly from the first sloped surface;a second sloped surface extending radially inwardly and downwardly from the second horizontal surface;a third horizontal surface extending radially inwardly from the second sloped surface below a radially outer edge of a substrate; anda first vertical surface extending downwardly from a radially inner edge of the third horizontal surface.

27. The plasma processing system of claim 26, further comprising:an annular groove arranged on a lower and radially inner edge of the annular body, wherein the first ceramic layer includes a cylindrical inner portion and an annular step extending from a lower and radially outer side of the cylindrical inner portion, and wherein the annular step extends into the annular groove.

28. The plasma processing system of claim 18, wherein the first ceramic layer includes an annular step and the edge ring includes an annular groove on a radially inner side thereof, wherein the annular step extends radially outwardly in a range from 5% to 25% of a radial width of the edge ring.

29. The plasma processing system of claim 18, wherein a middle portion of the edge ring arranged above the second ceramic layer extends in a range from 40% to 90% of a radial width of the edge ring.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA30. The plasma processing system of claim 19, wherein a radially outer portion of the edge ring arranged above the sheath control ring extends in a range from 5% to 30% of a radial width of the edge ring.

31. A plasma processing system comprising:a substrate support including:a baseplate;a first ceramic layer including a cylindrical inner portion and an extended step,wherein the extended step includes a first electrode configured to receive an RF bias; anda bond layer attaching the first ceramic layer to the baseplate; and an edge ring including a radially inner portion extending above the extended step and a radially outer portion, wherein a bottom surface of the edge ring in the radially outer portion includes a threaded cavity configured to receive a mechanical clamp.

32. The plasma processing system of claim 31, wherein the edge ring includes an annular body including:a first horizontal surface;a first sloped surface extending inwardly and radially downwardly from the first horizontal surface;a second horizontal surface extending radially inwardly from the first sloped surface below a radially outer edge of a substrate; anda first vertical surface extending downwardly from a radially inner edge of the second horizontal surface adjacent to a radially outer edge of the cylindrical inner portion.

33. The plasma processing system of claim 31 , wherein the radially inner portion of the edge ring extends in a range from 60% to 90% of a radial width of the edge ring.

34. The plasma processing system of claim 33, wherein the radially outer portion of the edge ring extends in a range from 10% to 40% of a radial width of the edge ring.

35. The plasma processing system of claim 33, further comprising an RF source connected to the first electrode.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA36. The plasma processing system of claim 35, further comprising a variable capacitor, wherein the RF source connected by the variable capacitor to the first electrode.

37. A plasma processing system comprising:a substrate support including:a baseplate;a first ceramic layer including a cylindrical inner portion and an extended step, wherein the extended step includes a first electrode configured to receive an RF bias; anda bond layer attaching the first ceramic layer to the baseplate; an edge ring arranged above the extended step and including an annular body including:a first horizontal surface;a first sloped surface extending inwardly and radially downwardly from the first horizontal surface;a second horizontal surface extending radially inwardly from the first sloped surface below a radially outer edge of a substrate; anda first vertical surface extending downwardly from a radially inner edge of the second horizontal surface adjacent to a radially outer edge of the cylindrical inner portion,wherein the extended step extends in a range from 60% to 100% of a radial width of the edge ring.

38. The plasma processing system of claim 37, further comprising an RF circuit including an RF source coupled to the first electrode and a variable capacitor coupling the RF source to the baseplate.

39. The plasma processing system of claim 37, further comprising a second electrode arranged in the extended step configured to receive a DC bias to chuck the edge ring.

40. The plasma processing system of claim 37, wherein the first electrode is configured to receive a DC bias to chuck the edge ring.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA41. The plasma processing system of claim 37, wherein a bottom surface of the edge ring includes a cavity for receiving a cooling gas.

42. The plasma processing system of claim 41, wherein the cavity of the edge ring includes a plurality of annular seal bands.

43. The plasma processing system of claim 41 , wherein the cavity includes a plurality of mesas.

44. The plasma processing system of claim 37, wherein a top surface of the extended step includes a cavity for receiving a cooling gas.

45. The plasma processing system of claim 44, wherein the cavity includes a plurality of annular seal bands.

46. The plasma processing system of claim 45, wherein the cavity includes a pattern of mesas.

47. A substrate support comprising:a baseplate;a first ceramic layer made of a Johnsen-Rahbek (JR) material; andan upper layer deposited on a top surface of the first ceramic layer, wherein the upper layer is made of a Coulombic material.

48. The substrate support of claim 47, wherein the first ceramic layer includes a cylindrical inner portion and an extended step projecting radially outwardly from a lower and radially outer side of the cylindrical inner portion.

49. The substrate support of claim 47, wherein the upper layer is deposited on the first ceramic layer using chemical vapor deposition (CVD).

50. The substrate support of claim 47, wherein the upper layer has a thickness in a range from 50 pm to 200 pm.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA51. The substrate support of claim 47, wherein the upper layer defines a cavity for receiving cooling gas.

52. The substrate support of claim 51 , wherein the upper layer includes a plurality of mesas arranged in the cavity.

53. The substrate support of claim 51 , wherein the upper layer includes a plurality of annular seal bands in the cavity.

54. The substrate support of claim 53, wherein the plurality of annular seal bands define a plurality of cooling gas zones in the cavity.

55. The substrate support of claim 51 , wherein the upper layer includes a plurality of cooling gas grooves in the cavity.

56. The substrate support of claim 47, wherein the upper layer is machined to define one or more features selected from a group consisting of a cavity, a mesa, an annular seal band, and a cooling gas groove.

57. The substrate support of claim 47, wherein the upper layer is patterned to define one or more features selected from a group consisting of a cavity, a mesa, an annular seal band, and a cooling gas groove.

58. The substrate support of claim 48, wherein the extended step projects radially outwardly from the cylindrical inner portion in a range from 5% to 25% of a diameter of the cylindrical inner portion.

59. The substrate support of claim 48, further comprising a first electrode arranged in the extended step and configured to receive an RF bias.

60. The substrate support of claim 59, wherein the first electrode is configured to receive a DC bias to attract the edge ring.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA61. The substrate support of claim 59, further comprising a second electrode arranged in the extended step and configured to receive a DC bias to attract the edge ring.

62. The substrate support of claim 48, wherein a top surface of the extended step includes a cavity for receiving a cooling gas.

63. The substrate support of claim 62, wherein the cavity includes a plurality of annular seal bands.

64. The substrate support of claim 63, wherein the cavity includes a plurality of mesas.

65. A plasma processing system comprising:a substrate support including a baseplate, a first ceramic layer including a cylindrical inner portion and an extended step extending radially outwardly from the cylindrical inner portion, and a bond layer attaching the first ceramic layer to the baseplate;an edge ring including an annular body including a radially inner portion arranged above the extended step and a radially outer portion, a first annular groove arranged adjacent to a radially inner side of a bottom surface of the edge ring, a first cavity configured to receive a mechanical clamp and arranged on the bottom surface of the edge ring in the radially outer portion, and a second annular groove arranged in the radially inner portion adjacent to the first cavity;a first annular seal arranged in the first annular groove between the first annular groove and a top surface of the extended step; anda second annular seal arranged in the second annular groove between the second annular groove and the top surface of the extended step.

66. The plasma processing system of claim 65, further comprising a first electrode arranged in the extended step and configured to receive an RF bias.

67. The plasma processing system of claim 65, wherein a bottom surface of the edge ring includes a second cavity for receiving a cooling gas.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA68. The plasma processing system of claim 67, wherein the bottom surface of the edge ring includes a plurality of annular seal bands.

69. The plasma processing system of claim 67, wherein the bottom surface of the edge ring includes a plurality of mesas.

70. The plasma processing system of claim 65, wherein a top surface of the extended step includes a second cavity for receiving a cooling gas.

71. The plasma processing system of claim 65, wherein the top surface of the extended step includes a plurality of annular seal bands.

72. The plasma processing system of claim 65, wherein the top surface of the extended step includes a plurality of mesas.

73. The plasma processing system of claim 65, wherein the extended step projects radially outwardly from the cylindrical inner portion in a range from 60% to 90% of a radial width of the edge ring.

74. A plasma processing system comprising:a substrate support including:a baseplate;a first ceramic layer including a cylindrical inner portion and an extended step; anda bond layer attaching the first ceramic layer to the baseplate; and an edge ring comprising an annular body including a bottom surface with a cavity configured to receive a mechanical clamp,wherein the extended step extends in a range from 40% to 90% of a radial width of the edge ring.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA75. The plasma processing system of claim 74, further comprising:an annular seal,wherein the baseplate includes an annular step arranged on an upper and radially outer side thereof, andwherein the annular seal is arranged between the annular step of the baseplate and a bottom surface of the extended step.

76. The plasma processing system of claim 74, further comprising a first electrode arranged in the extended step configured to receive an RF bias.

77. The plasma processing system of claim 74, wherein the edge ring includes:a first annular groove arranged at a radially inner side of the bottom surface; a second annular groove arranged on the bottom surface;a first seal arranged in the first annular groove between the first annular groove and a top surface of the extended step; anda second seal arranged in the second annular groove between the second annular groove and the top surface of the extended step.The plasma processing system of claim 77, wherein the bottom surface of the edge ring includes a cavity for receiving a cooling gas.

79. The plasma processing system of claim 77, wherein the bottom surface of the edge ring includes a plurality of annular seal bands.

80. The plasma processing system of claim 77, wherein the bottom surface of the edge ring further includes a plurality of mesas.

81. The plasma processing system of claim 74, wherein a top surface of the extended step includes a cavity for receiving a cooling gas.

82. The plasma processing system of claim 81 , wherein the top surface of the extended step includes a plurality of annular seal bands.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA83. The plasma processing system of claim 81 , wherein the top surface of the extended step includes a plurality of mesas.

84. The plasma processing system of claim 74, wherein the extended step projects radially outwardly from the cylindrical inner portion in a range from 40% to 90% of a diameter of the edge ring.

85. A plasma processing system, comprising:a substrate support including a first baseplate including a cylindrical body and a first set of cooling channels, a first ceramic layer, and a bond layer bonding the first ceramic layer to the first baseplate; andan edge ring support including a second baseplate including an annular body and a second set of cooling channels arranged in the annular body, a second ceramic layer including a flat annular body, and a bond layer bonding the second ceramic layer to a top surface of the second baseplate.

86. The plasma processing system of claim 85, wherein the first ceramic layer includes a cylindrical inner portion and an annular step extending radially outwardly from a lower and radially outer side thereof.

87. The plasma processing system of claim 86, wherein a bottom surface of the edge ring overlaps the annular step and the second ceramic layer.

88. The plasma processing system of claim 85, further comprising an electrode arranged in the second ceramic layer configured to receive a DC bias for attracting the edge ring.

89. The plasma processing system of claim 85, further comprising a first chiller configured to supply liquid coolant to the first set of cooling channels.

90. The plasma processing system of claim 89, further comprising a second chiller configured to supply liquid coolant to the second set of cooling channels.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA91. The plasma processing system of claim 85, further comprising a first chiller configured to supply liquid coolant to one of the first set of cooling channels and the second set of cooling channels, wherein the first set of cooling channels and the second set of cooling channels are connected in series.

92. The plasma processing system of claim 85, further comprising:an RF source connected to the second baseplate; anda variable capacitor coupling the RF source to the first baseplate.

93. A plasma processing system, comprising:a substrate support including a first baseplate including a cylindrical body and a first set of cooling channels in the cylindrical body, a ceramic layer, and a bond layer bonding the ceramic layer to the first baseplate; andan edge ring support including an annular body made of ceramic and arranged radially outside of the first baseplate, a first electrode arranged in the annular body, and a second set of cooling channels arranged in the annular body below the first electrode.

94. The plasma processing system of claim 93, wherein the ceramic layer includes a cylindrical inner portion and an extended step extending radially outwardly from a lower and radially outer side thereof.

95. The plasma processing system of claim 94, further comprising an edge ring, wherein the extended step extends in a range from 40% to 90% of a radial width of the edge ring.

96. The plasma processing system of claim 94, further comprising an edge ring including an annular body with a radially inner portion arranged on a top surface of the extended step and a radially outer portion arranged on a top surface of the edge ring support.

97. The plasma processing system of claim 93, wherein the first electrode is configured to receive a DC bias for attracting the edge ring.

98. The plasma processing system of claim 93, wherein the first electrode is configured to receive an RF bias.Attorney Docket No. 11743-1 WOHDP Ref. No. 15545-001285-WO-POA99. The plasma processing system of claim 93, wherein the first electrode is configured to receive an RF bias and a DC bias for attracting the edge ring.

100. The plasma processing system of claim 93, further comprising a first chiller configured to supply liquid coolant to the first set of cooling channels.

101. The plasma processing system of claim 100, further comprising a second chiller configured to supply liquid coolant to the second set of cooling channels.

102. The plasma processing system of claim 100, further comprising a first chiller configured to supply liquid coolant to one of the first set of cooling channels and the second set of cooling channels, wherein the first set of cooling channels and the second set of cooling channels are connected in series.

Images