Semiconductor-free electric and electronic circuit components

Abstract

With this invention, electronic circuit components such as transistors, diodes, zener diodes and varicap diodes, which are conventionally manufactured with semiconductors, can be produced without semiconductors by means of a much simpler and cheaper technology, and by the same technology a compensation capacitor can be manufactured whose capacitance is automatically varied so as to follow changes in the load simultaneously. This principle may also be applied in other areas such as microwaves. In simple terms, the electric and magnetic fields of the main capacitor are blocked by a control voltage and varied between zero and maximum values, and as a result the capacitance of the main capacitor is changed. The fundamental principle here is the control of the electric and magnetic fields between the two conductive plates of a fixed-capacitance capacitor. For this purpose, a control voltage is applied between a third metallic plate, designed as a grid or similar structure so as not to block the electric and magnetic fields of the main capacitor and placed closer to one of the two plates, and the adjacent metallic plate, while a DC voltage (VDD) of suitable value for the circuit is applied across the terminals of the main capacitor. In a slightly different version, two grids are provided so that the structure can be used both as a diode and as a transistor. In both cases, the capacitance value of the main capacitor varies depending on the control voltage, i.e. Co = f(Vi). This means that, similar to classical transistors, the impedance of the circuit varies depending on the control voltage. In this structure, which exhibits behaviour similar to FET transistors, the output voltage is taken across the two outer plates of the capacitor with a design similar to a classical transistor circuit. In the production stage, the dielectric will be formed by coating very thin special plastic or other suitable materials with an appropriate metal of suitable thickness for the design and winding it in roll form. Likewise, dielectric layers may also be formed as very thin oxide or other non-conductive chemical compounds on the surfaces of the metallic 24 plates. That is, use will be made of conventional capacitor technologies such as ceramic, tantalum and electrolytic capacitors. In addition, different methods may be developed depending on the field of application. These designs will find application areas as semiconductor-free transistors, diodes, voltage-controlled variable capacitors, and many other uses, some of which have been explained in this project.

Description

[0001] DESCRIPTION

[0002] SEMICONDUCTOR-FREE ELECTRIC AND ELECTRONIC CIRCUIT COMPONENTS

[0003] Technical Field of the Invention

[0004] The invention relates to a system for manufacturing transistors, diodes, varicap diodes, variable compensation capacitors, and other electronic components without using semiconductors.

[0005] The invention in particular relates to the electronic circuit element manufactured without using semiconductors being placed at the focal point in parabolic antennas so as to amplify the microwave and transmit it to subsequent electronic circuits for frequency reduction and other processes, to its direct use in compensation processes in industrial facilities, and to its being manufactured on a DGS (Defected Ground Structure) according to the desired frequency in order to be used for microwave generation.

[0006] State of the Art

[0007] At present, fixed capacitor groups are used in compensation. In their connection and disconnection, the capacitive power supplied to the circuit is often more or less than required, and there is also a delay in the switching of the contactors. The occurrence of transient regimes during these switching operations is another problem. In addition, in the manufacture of transistors, diodes, varicap diodes and other electronic circuit components, elements such as Germanium (Ge), Silicon (Si) and Selenium (Se), and compounds such as Copper Oxide (CuO), Gallium Arsenide (GaAs) and Indium Phosphide (InP) are used. The production of these and the manufacture of semiconductor components requires a very high level of technology. In order for the investment made to be recovered, it is necessary to enter the market at prices that can compete with the manufacturers dominating the current market. Today, the dimensions of a produced transistor have reached a level equal to several atomic sizes and continue to become even smaller. Of course, the laws of physics also have a limit. It is not possible to produce a transistor smaller than the atomic size. In current technologies, control is entirely in certain countries and their global companies, and entering this sector requires very large investments. Entering the world market is very difficult against strong competitors. Countries that do not possess these technologies cannot surpass a certain level in terms of developing technology. Apart from this, in semiconductor-based electronic circuit components there exists a non- negligible active power loss, which manifests itself in the form of heat both at idle and during operation, and necessitates additional measures such as cooling. Although these losses are reduced as much as possible, they remain at a significant level for portable radios, mobile phones and other electronic devices. Since graphene-based components are still at the laboratory stage, it is too early at present to make an assessment. Even in them, it is clear that control will lie in a few advanced countries.

[0008] Apart from semiconductors, just as an entirely different technology will be developed, the question arises as to whether “at least some of the electromagnetic waves in space occur as a result of oscillation through a similar mechanism.” Because, between the positively and negatively charged formations in space, an interaction similar to this transistor and the generation of oscillations or sudden discharges is not impossible. In particular, it is useful to analyse from this perspective the strong radio waves detected in the form of impulses. There is no transistor, which is an artificial structure, in the universe, and this perspective appears more suitable to this natural structure.

[0009] The most important handicap is the difficulty in miniaturisation in the form of an integrated circuit (IC - Integrated Circuit). At high frequencies, miniaturisation can be performed to a certain extent.

[0010] In addition, most of the loads in industry are inductive due to electric motors. As is known, this causes the current to lag behind the voltage, and leads to a phase shift between voltage and current. This situation both affects other equipment in the industrial facility and leads to serious imbalance and power losses in the power transmission lines (OHL) of the energy distribution company. For this reason, in enterprises the % Inductive: QL / P and % Capacitive: Qc / P ratios have been stipulated as follows:

[0011] - For operating power between 9 kW and 29.9 kW, 33% for inductive and 20% for capacitive.

[0012] - When the operating power is greater than 30 kW, 20% for inductive and 15% for capacitive.

[0013] If these ratios are exceeded, the enterprise incurs a penalty and is obliged to pay severe fines. Although there are different types of compensation, at present capacitor-based compensation with contactors is generally used worldwide. In this, capacitor banks of values such as 5 kVAr, 10 kVAr, 20 kVAr, etc. are switched into or out of the circuit according to the need. Naturally, there is a delay in this operation, and the system cannot follow the power variations in the enterprise one-to-one. This means, for example, that when the capacitor of 20 kVAr power must be disconnected because it is no longer needed, that is, because the inductive power has decreased, it keeps the facility in capacitive mode for a further period. Likewise, when the inductive power increases (a motor being switched on), some time passes before the capacitor of the required power to balance it is switched into the circuit. Moreover, in both of these cases explained, since the capacitor banks are fixed, the capacitors being switched into or out of the circuit are not of the required amount, but somewhat more or somewhat less than the need.

[0014] In addition, both semiconductor and graphene-based technologies exist only in certain countries. Countries that do not have these technologies are dependent on them in this regard. Even if they attempt production themselves, due to the very high costs they cannot survive in the market. Description of Drawings

[0015] For a clear expression of the subject, the relevant figures are explained here in sequence.

[0016] Figure 1 is the drawing showing the view of the structure formed by leaving a grid closer to one of the plates between the capacitor plates, concerning the invention of producing electronic components without using semiconductors.

[0017] Figure 2 is a drawing showing the DC equivalent of the capacitor tank formed with the system of producing electronic components without using semiconductors, which is the subject of the invention.

[0018] Figure 3 is a drawing showing the electric field vectors in the capacitor formed with the system of producing electronic components without using semiconductors, which is the subject of the invention.

[0019] Figure 4 is a drawing showing the circuit diagram of the capacitor formed with the system of producing electronic components without using semiconductors, which is the subject of the invention.

[0020] Figure 5 is a drawing showing the design made to reduce parasitic capacitance in the structure formed in the system of producing electronic components without using semiconductors, which is the subject of the invention.

[0021] Figure 6 is a drawing showing the circuit diagram for voltage regulation using a capacitive FET transistor in the system of producing electronic components without using semiconductors, which is the subject of the invention.

[0022] Figure 7 is a drawing showing the formation of an electronically controlled electric field curtain between the two conductive plates of the capacitor by leaving two grids instead of a single grid in the system of producing electronic components without using semiconductors, which is the subject of the invention.

[0023] Figure 8 is a drawing showing the application circuit diagram as a diode of the structure in which an electronically controlled electric field curtain is formed between the two main metal plates of the capacitor by leaving two grids instead of a single grid in the system of producing electronic components without using semiconductors, which is the subject of the invention.

[0024] Figure 9 is a drawing showing the application circuit diagram as a variable compensation capacitor of the structure formed by leaving a grid closer to one of the plates between the capacitor plates, concerning the system of producing electronic components without using semiconductors, which is the subject of the invention.

[0025] Reference Numbers

[0026] 1. Thick dielectric plate

[0027] 2. Thin dielectric plate

[0028] 3. First conductive plate

[0029] 4. Second conductive plate

[0030] 5. Grid

[0031] 6. Thickness of thick dielectric

[0032] 7. Thickness of thin dielectric

[0033] 8. Distance between conductive plates

[0034] 9. Parasitic capacitance

[0035] 10. Input capacitance 11. Output capacitance

[0036] 12. Equivalent capacitance

[0037] 13. Input electric field

[0038] 14. Parasitic electric field

[0039] 15. Output electric field

[0040] 16. Load impedance

[0041] 17. DC supply voltage

[0042] 18. Input signal

[0043] 19. Output signal

[0044] 20. Regulated thick dielectric structure

[0045] 21. Power transformer

[0046] 22. Transformer VAC input

[0047] 27. First grid

[0048] 28. Second grid

[0049] 29. Third dielectric plate in input capacitance

[0050] 31. Anode

[0051] 32. Cathode

[0052] 33. Control input

[0053] 37. Mains

[0054] 38. Fuse

[0055] 39. Contactor 40. Variable compensation capacitor

[0056] 41. Compensation relay

[0057] 42. Current transformer connection

[0058] 43. Three-phase mains input

[0059] 44. Input of capacitor current information to compensation relay

[0060] 45. Control input of variable compensation capacitor

[0061] Disclosure of the Invention

[0062] The invention relates to a system for manufacturing transistors, diodes, varicap diodes, variable compensation capacitors, and other electronic components without using semiconductors.

[0063] In the integrated circuits to be manufactured with the technology involved in the invention, the application of electrolytic capacitor and similar technologies will provide a very significant possibility of reduction in volume. In production, the preparation of each of the three conductive plates (the first conductive plate (3), the second conductive plate

[0064] (4) and the grid (5)) is carried out by forming a thin layer of aluminium or another conductive material at the order of micrometres on a very thin special plastic or similar dielectric material suitable for the field of application. Alternatively, as in electrolytic capacitors, the surfaces of the aluminium (or another metal) plates on both sides are oxidised to provide insulation. The same process can also be applied to the middle grid

[0065] (5) as required. Depending on the situation, it is also possible for this insulation to be applied only to the middle grid (5). That is, the matter of the dielectric layer is solved by applying whichever method is more suitable depending on the application. The conductive grid (5) can likewise be manufactured in the same way, and its pores can also be manufactured at the order of micrometres depending on the application. Apart from the grid (5) structure, different structures such as concentric circles, ellipses or strips may be preferred. The need for the individual use of the components (diode, transistor, etc.) mentioned exists in all applications. In this case, this structure can be reduced to a reasonable extent by making use of existing technology. The fact that it is suitable for the easy manufacture of many different electronic components such as FET transistor, zener (AC voltage regulator), diode and varicap diode is a separate advantage.

[0066] The possibility it provides, in compensation systems, for capacity adjustment simultaneously with the power drawn in an electronically controlled manner is a unique development in today’s technology, having no equivalent, and will greatly ease enterprises.

[0067] The most obvious feature of this technique is that it brings a completely radical new perspective to the classical design of electronic circuits. In this way, it has been proven that, in the design of active electronic circuit components, there are other solutions apart from semiconductors. Moreover, this solution has been realised with a capacitor, which is a passive circuit element.

[0068] The invention has also been applied as a transistor. In accordance with the principles explained in detail in the following sections, and according to Figure 1 , in an exemplary implementation of the invention, two first conductive plates (3) and second conductive plates (4) (both aluminium plates) of 30x40x0.9 cm dimensions were taken, and between them a metallic grid (5) of 0.7 mm thickness and 1.9 mm side length of square cells, which can be varied in size, was placed. In an exemplary application of the invention, the thin dielectric thickness (7) (di), which is the distance between the grid (5) and the first conductive plate (3) closer to it (the thickness of the thin dielectric plate (2)), was taken as 0.1 mm, and the thick dielectric thickness (6) (do), which is the distance between the grid (5) and the second conductive plate (4) farther from it (the thickness of the thick dielectric plate (1)), was taken as 0.3 mm (these thickness values may vary depending on application conditions, the ratio of 1 / 3 is not a fixed ratio). For this, a layer of transformer insulation paper of 0.1 mm thickness was placed as the thin dielectric plate (2) between the grid (5) and the second conductive plate (4) closer to the grid (5), and for the thick dielectric plate (1 ) between the grid (5) and the first conductive plate (3) farther from the grid (5), three layers of the same transformer insulation paper were placed. That is, do = 3xdi (the thick dielectric thickness (6) = 3x the thin dielectric thickness (7)), so that the thick dielectric plate (1) was taken to be three times the thickness of the thin dielectric plate (2). The reason for using transformer insulation paper is that, although its dielectric constant is low, it is a good dielectric that does not absorb moisture. Then these (the thick dielectric plate (1), the thin dielectric plate (2), the first conductive plate (3), the second conductive plate (4) and the grid (5)) were glued together with adhesive, and by placing a weight on top and waiting for one day, they were made to adhere thoroughly. Afterwards, the circuit in Figure 4 was set up, and the DC supply voltage (17) of VDD = 12 VDC was applied, and the input signal (18) (Vi) was applied to the input. The reason for selecting the DC supply voltage (17) as a low value is the concern that there might be a weakness of insulation at some point between the thick dielectric plate (1) and the thin dielectric plate (2). In addition, since the DC supply voltage (17) is low and the capacitance is also low, an inductor with a very low DC resistance was placed instead of a resistor R. Subsequently, the two channels of the oscilloscope were connected to the input and the output, and as the input signal (18), square and sinusoidal waves of several volts amplitude at the order of kHz from the signal generator were applied, and the input signals (18) and output signals (19) were examined; at the output, with a 180° phase shift from the input, a very clean (undistorted) and amplified form of the input signal (18) was obtained.

[0069] As is known, the distance between the plates of a capacitor is very small, and as this distance increases, the capacitance value decreases. Therefore, in the study to be carried out here, it is necessary to pay attention to this and similar problems that may arise.

[0070] With the basic structure in Figure 1 and the three capacitors in Figure 2 (the parasitic capacitance (9), the input capacitance (10) and the output capacitance (11)) were obtained. Here, at the output of the two branches, the equivalent capacitance (12) is formed. The input capacitance (10) (Ci), which is formed between the second conductive plate (4) (the lower plate) and the grid (5); the output capacitance (11) (Co), which is formed between the second conductive plate (4) and the first conductive plate (3) (the lower and upper plates); and the parasitic capacitance (9) (Cp), which is formed between the first conductive plate (3) (the upper plate) and the grid (5), and which is in fact undesirable. The distances between the first conductive plate (3) and the second conductive plate (4) (the metallic capacitor plates) are shown respectively as the thin dielectric thickness (7) (di), the distance between conductive plates (8) (d), and the thick dielectric thickness (6) (do). These can be explained in terms of DC as follows:

[0071] Looking at the state of the electric fields in Figure 3, the parasitic electric field (14) (Ecp) formed in the parasitic capacitance (9) (Cp) (between the upper first conductive plate (3) and the grid (5)); the input electric field (13) (Eci) formed in the input capacitance (10) (Ci) (between the grid (5) and the lower second conductive plate (4)); and the output electric field (15) (Eco) formed in the output capacitance (11) (Co), i.e. between the first conductive plate (3) and the second conductive plate (4), are all as shown. The electric field is a vector quantity, however, as can be seen in Figure 3, in all three capacitors (9, 10, 11) the input electric field (13), the parasitic electric field (14) and the output electric field (15) are in the same direction (the same or opposite). Therefore, when performing vector operations here, algebraic addition or subtraction will be carried out, which shows that the resultant vector will vary linearly depending on the values of these vectors. A similar situation also applies for the magnetic field.

[0072] When DC is applied to the output capacitance (11), a constant output electric field (15) is formed there. To the input capacitance (10), on the other hand, a time-dependent varying signal (AC) will be applied. Since this is the input signal (18), naturally its amplitude (voltage) is low. In order for the input electric field (13) formed by this input signal (18) to be at a comparable level with the output electric field (15), the values were taken as follows (in Figure 1 ): do » di (1)

[0073] Since the electric field is

[0074] E = V / d and therefore

[0075] Eci = Vi / di

[0076] Eco = Vo / (di+ do)

[0077] The thick dielectric thickness (6) (do) and the thin dielectric thickness (7) (di) may vary in ratio, and by selecting the thick dielectric thickness (6) to be of greater value than the thin dielectric thickness (7) (di), the following relation is obtained:

[0078] Eci (input electric field (13)) < Eco (output electric field (15))

[0079] Since both are in the same plane and in the same direction, when they are in the same orientation the resultant E vector is the sum of the two, and when they are in opposite orientations it is the difference of the two; i.e. ,

[0080] E = Eci ± Eco (2)

[0081] What this means is that the weak input signal (18) applied to the terminals of the input capacitance (10) (input) at the input is obtained as an amplified waveform of the output signal (19) at the terminals of the output capacitance (11) (output) at the output. That is, this circuit exhibits entirely a transistor behaviour, and since it is based on the principle of controlling the electric field, it can be likened to FET transistors. The parasitic electric field (14) in the parasitic capacitance (9) is constant, since there is only DC at its terminals, and it has no effect on the operation. However, especially at high frequencies, feedback occurs through it, which can be compensated. This subject will be discussed with later.

[0082] On the other hand, the current that the circuit can draw is

[0083] I = dq / dt (3) q = Cv (4) and therefore, under constant voltage, the power drawn depends on the value of the capacitance. This can be adjusted to the desired value by the area of the conductive plates (3, 4) and the selection of the dielectric material placed between them. When it is not desired to draw much power from the signal source at the input, the permittivity coefficient er of the thin dielectric plate (2) of the input capacitance (10) is selected to be low accordingly. Since the output capacitance (11) is the place where the output signal (19) is taken, the permittivity coefficient of the thick dielectric plate (1) is selected to be high, thereby increasing the value of the output capacitance (11) and allowing more current to be drawn. However, since the thin dielectric plate (2) and the thick dielectric plate (1) in the output capacitance (11), and therefore the distances in these two layers and the dielectrics placed, are also effective, when selecting the d distances and the dielectrics to be placed, optimum values must be chosen according to the desired transistor characteristics. As can be seen, the input and output impedances of the transistor can also be designed according to the need and the field of application.

[0084] In order to minimise the parasitic capacitance (9), since the purpose of the grid (5) is to allow the formation of the output capacitance (11 ) between the first conductive plate (3) and the second conductive plate (4), for the reduction of the capacitance between the first conductive plate (3) and the grid (5) the regulated thick dielectric structure (20) in Figure 5 has been conceived. For easier understanding, this Figure 5, like all the figures, has been drawn exaggeratedly large. Otherwise, depending on the field of application, its frequency and the input and supply voltages, the thicknesses (6, 7) of the two conductive plates (3, 4), the grid (5) and the dielectric plates will be reduced from the millimetre level down to the micrometre and even nanometre levels.

[0085] This structure, by being wound in roll form and also making use of present capacitor technologies, can be reduced to extremely reasonable physical dimensions.

[0086] The electric field is the ratio of the applied input signal (18) to the distance (6, 7) between the two plates. Although the DC supply voltage (17) (VDD value) is constant, the change of the output signal (19) can only be explained by the change of the distance between the conductive plates (3, 4) containing the dielectric, i.e. the distance between conductive plates (8). The fact that this effect is observed even though the distance between conductive plates (8) is constant means that the distance between conductive plates (8) is changing imaginatively. In other words, and this expression fully represents this project. It is clearly seen that the output capacitance (11 ) (Co) depends on the input signal (18), that is, it is a function of it. The output capacitance (11) changes in dependence on the input signal (18) with a constant coefficient. This amplification coefficient can be easily determined depending on the distance between conductive plates (8) and the dielectric material.

[0087] Indeed, the variation between the peak value and the minimum of the applied input signal (18) is reflected in the output signal (19) as amplified with a 180° phase difference. When the input signal (18) is applied, the resultant electric field (E), and accordingly the output capacitance (11), also increases and decreases.

[0088] It was stated that the parasitic capacitance (9) is parasitic and its value must be minimised. As shown in Figure 5, the value of the parasitic capacitance (9) can be minimised by leaving no dielectric in line with the grid bars (5) between the grid (5) and the upper first conductive plate (3), i.e. by taking er = 1 in these alignments. In addition, the feedback caused by the parasitic capacitance (9) can be further reduced by appropriate connections in the circuit. Apart from this, the coating of the upper surface of the grid (5) with an electret may also be considered, provided that its behaviour in the electric field is examined. By leaving a dielectric with a high permittivity value in the portions corresponding to the holes of the grid (5), which provide the value of the output capacitance (11 ), the output capacitance (11) can be increased.

[0089] It was stated that the change of the output electric field (15) value depending on the input signal (18) means not a physical but an imaginary change of the distance between conductive plates (8) (Figure 1 ). This feature will find application areas not only as a transistor but also as many others such as varicap diode, diode, zener, and variable capacitor. Of course, this capacitive active element will be designed differently and suitably for the field of application, whether as a transistor, zener diode, diode, varicap diode, variable compensation capacitor whose value changes simultaneously with the load, microwave sensor, etc.

[0090] As is known, zener diodes operate under DC, and when the applied voltage exceeds the zener’s own value it reduces it, but when the voltage falls below the zener diode’s voltage it cannot raise it. In the circuit in Figure 6, due to the capacitive character of the element, the element was placed not on the DC side but on the AC side, and a centre- tapped power transformer (21) was used. To the control terminal (the grid (5)) was applied, as the control signal, the transformer 220 VAC input (22) via a potentiometer, from the other output of the power transformer (21) with 180° phase difference. Since the transformer 220 VAC output (31 ) is in opposite phase with the voltage at the anode (31), when the voltage at the anode (31) falls it tries to raise it, and when it rises it tries to lower it. The potentiometer is adjusted to the desired output voltage. As can be seen, this circuit element performs voltage regulation and also accomplishes what a zener diode cannot. With a suitable design, this circuit can also be constructed without using a centre-tapped transformer. This shows that this circuit can also be used as a step-down voltage regulator. Here, as can also be seen from Figure 6, the anode (31), cathode (32) and control input (33) sections are used in the transistor. That is, in fact, the transistor principle is applied here, provided that its structure is designed to deliver the required power.

[0091] A somewhat different structure has also been designed as a diode. As can be seen in Figure 7, a first grid (27) and a second grid (28) have been left. Between the two grids (27, 28), a third dielectric plate, which is the third dielectric plate in the input capacitance (29), has been placed. Here too, the input signal (18) creates an input electric field (13) between the first grid (27) and the second grid (28) (control input (33)). The distance between the first grid (27) and the second grid (28) is adjusted so that the input electric field (13) formed there is comparable in magnitude to the electric field produced by the DC supply voltage (17). As can be seen, diodes must also be manufactured in accordance with the operating voltage and frequency. As can be seen in Figure 8, an AC signal is applied between the first grid (27) and the second grid (28). As in the transistor, when the signal arrives in the same direction as the electric field of the DC voltage, the signal appears amplified at the output resistance. When the input signal (18) is in the opposite direction to the DC supply (VDD), the electric field of the signal is nullified and no signal appears at the output. That is, this circuit functions as a half-wave diode that also performs amplification. By applying different signals to the first grid (27) and the second grid (28), it can also be used as a mixer. Since amplification is also carried out, this circuit can in fact also be used as a transistor. Its greatest advantage is that it transfers very weak signals to the output by amplifying them. Depending on the application, this DC supply voltage (17), shown as VDD, may also be a large-valued charged capacitor or the power supply of the relevant electronic circuit. In fact, the FET transistor structure can also be used as a diode with the necessary revisions, as seen in the step-down / regulator application above.

[0092] Provided that these diodes are designed according to the relevant frequency, they can be used successfully both at mains frequency and at radio frequencies. Since, unlike in semiconductor diodes, there is no voltage drop across the diode for polarisation, with a good design they can operate with very weak radio signals and low supply voltage.

[0093] The same diode principle is also valid in power circuits, for example in converting AC mains voltage into DC. In Figure 7, the region between the first grid (27) and the second grid (28) is the control input (33), and a small-valued DC control voltage is applied there. One of the outer conductive plates of the capacitor is connected to the AC input and acts as the anode, while the other conductive plate, which is close to the grid, is connected to the load impedance (16), and the other end of the load is connected to the other end of the AC power supply, thereby acting as the cathode (32). In addition, a large-valued capacitor is connected in parallel to the load. With this, an AC / DC converter from which large power can be drawn can be made. This is a half-wave converter, and full-wave rectification can also be carried out with two diodes.

[0094] In each different application, special manufacture must be carried out according to factors such as the power of the relevant circuit, the operating frequency band and the operating voltage. By applying AC between the anode (31) and ground, a half-wave output is obtained across the load impedance (16) (in general terms, the load impedance). With a capacitor of suitable value connected in parallel to the load impedance (16), DC is obtained. By applying a DC of suitable value (practically at very low voltage) to the first grid (27) and the second grid (28), one alternation of the AC voltage applied at the input is cut off. In a similar structure, by applying DC between the anode (31 ) and ground, and applying a signal to the first grid (27) and the second grid (28), the transistor function can also be realised.

[0095] For a varicap diode, provided that it is manufactured according to the operating frequency, if the RF signal to be modulated is applied between D-S and the signal that will modulate it (audio frequency, etc.) is applied between G-S, since the capacitance will vary according to the audio frequency, frequency modulation is applied to the RF signal in the resonance circuit formed with the resonance inductance connected in parallel to this capacitance. The input of the signal to be modulated is applied through the oscillator connection output to the other parts of the circuit where the capacitor transistor is located.

[0096] One of the most important applications of the invention is the issue of compensation, which causes very serious problems in industry.

[0097] The fundamental problem here is as follows: At present, semiconductor varicap capacitors (varicap or varactor), which are electronically controlled and whose value can be immediately changed according to the need, operate at the pF level. Capacitors at nF or pF values, synchronised with the need and whose value can be immediately (simultaneously) changed, cannot be manufactured with present technology. With this new capacitor-based technology, variable compensation capacitors (40) of large value, whose values can be automatically adjusted immediately at the moment of need, can be made, and a very major problem in industry can be solved from the root. So much so that the system will be adjusted within short times at the order of microseconds, and it will not remain capacitive or inductive outside the need even for an instant.

[0098] According to the mains frequency, voltage and the required power, capacitors as explained in detail in the transistor applications above will be manufactured. These will be manufactured in a delta connection and as a monolithic unit (3 pieces). Each of their control terminals will go individually to the control relay. The microprocessor-based relay analyses the voltage and current information coming from the 3 phases, generates the control voltages of the required amplitude and phase, and applies them separately to the control terminal (grid) of each capacitor, thereby simultaneously creating the required capacitance. According to the value of the capacitor at that moment, reactive capacitive power will be drawn from the AC mains connected across the two terminals of the capacitor. Since the value of the capacitor changes instantly in accordance with the instantaneous changing power consumption of the facility, full compensation will be achieved. In this way, from the mains connected across the two outer terminals of the capacitor, namely the first conductive plate (3) and the second conductive plate (4), the amount of reactive capacitive power required at that moment will be drawn. As shown in the single-line diagram in Figure 9, the current information drawn by the variable compensation capacitors (40) will also be sent to the control relay, and thus not only will precise operation be ensured, but any possible capacitor faults will also be immediately detected and an alarm signal will be generated.

[0099] In the circuit shown in Figure 9, 3 capacitor groups are shown. Depending on the need, 1 or more groups may also be provided. Thus, when a fault occurs in one group, the compensation relay (41) will automatically deactivate it and generate a fault signal, and can also switch another intact group into the circuit. The point to be noted here is that the capacitance generated in the circuit must be exactly at the value of the capacitive power required by the facility. The resonance phenomenon is outside the scope of the invention, and the necessary calculations and controls will be carried out in practice.

[0100] The compensation relay (41), by processing the current and voltage information received from each of the three-phases, will send a signal of the required voltage and phase to the control inputs (grid (5)) of each of the variable compensation capacitors (40), thereby generating the required capacitance separately for each phase. Naturally, as shown in the figure, the variable compensation capacitors (40) will also simultaneously receive and process their instantaneous values separately for each phase. If the maximum value of the first variable compensation capacitor (40) is insufficient, the second will be switched into the circuit, and it will continue in this way. If equal ageing is desired, all the variable compensation capacitors (40) can be switched into and out of the circuit in sequence and adjusted accordingly.

[0101] It may be thought that a variable compensation capacitor (40) made in this way will be of large volume. However, by being manufactured with a 3D printer or with present capacitor technology (such as an electrolytic capacitor), it will be wound in roll form like normal capacitors, and a small volume of the desired amount can be obtained.

[0102] In the variable compensation capacitors (40) to be manufactured with this new technology, the capacitance will be adjusted by a control voltage. For this, the voltage and current information of the three-phase mains will be supplied to a specially designed microprocessor-based compensation relay (41). This compensation relay (41), by determining the capacitance requirement at that moment, will apply a voltage of the amplitude and phase that will provide this value to the control inputs of the specially manufactured variable compensation capacitor (40). That is, the value of the variable compensation capacitor (40) will change simultaneously so as to exactly compensate the inductive load at that moment. In Figure 9, the mains (37), fuse (38), contactor (39), current transformer connection (42), three-phase mains input (43), input of capacitor current information to the compensation relay (44) and control input of the variable compensation capacitor (45), which are used in the compensation circuit, are also shown.

[0103] With this development, it has been shown that by controlling the electric and / or magnetic field between the plates of a capacitor with the externally applied input signal (18), or by applying the input signal (18) externally between these plates, the following can be realised:

[0104] 1- Transistor,

[0105] 2- Diode,

[0106] 3- Voltage regulator (AC zener diode) / step-down transformer, 4- Varicap diode,

[0107] 5- Electronically controlled large-valued variable compensation capacitor,

[0108] 6- Microwave receiver I converter,

[0109] 7- Microwave oscillator and amplifier by directly forming this transistor on a DGS (Defected Ground Structure),

[0110] 8- And other applications.

[0111] It should also be noted that this perspective leads us to DGS systems and waveguides at high frequencies. In fact, while the simplest course of historical development would have been to start from the simple structure of this project at low frequencies and, as the frequency rises to the microwaves, move on to DGS and waveguides, it is interesting that the progress went through electron tubes and transistors instead.

[0112] Undoubtedly, a certain technology will also be required in all these applications, but this technology is much simpler and cheaper than semiconductor technology or the newly developed graphene-based technology mentioned above. This study will be an alternative to the two said technologies in some areas, and the only solution in some applications.

[0113] This study shows that technology can be developed without disturbing the balance in nature or by keeping the disturbance to a minimum.

[0114] In this invention, a completely different approach has been shown from the existing technologies known in the world: As is known, in a capacitor, energy transfer takes place by means of the electric field between the two plates of the capacitor and the magnetic field formed depending on it, as expressed in Maxwell’s Equations. In this study, the electric field between the capacitor plates and the magnetic field depending on it are controlled. In this design, there are no active power losses as mentioned above in semiconductors, nor the resulting heating problem, and practically it is at zero level. With the variable compensation capacitors (40) to be manufactured with the same perspective, the values of the capacitors will be changed simultaneously with the demand at that moment by means of the control signal, and the inductive and capacitive powers in the relevant facility will be exactly balanced. In this way, a very major problem in today’s industrial facilities will be solved from the root.

[0115] In addition, solutions will be produced in many areas such as semiconductor-free varicap, diode, zener diode (which can also be called an AC zener diode or voltage regulator), etc.

[0116] As can be seen from some of the applications of this invention explained above, it will essentially make use of capacitor technology. Depending on the field of application, in some applications present capacitors and related technologies may be sufficient, while in some applications these technologies will need to be developed.

[0117] From the explanations made so far, it is understood that mass production will not take much time.

[0118] In applications such as individual transistors and varicap diodes, present capacitor technologies such as ceramic or electrolytic capacitors are sufficient. Although at present there appear to be difficulties in adequate minimisation for integrated circuit (Integrated Circuit - IC) applications, in this design, integrated circuits to be manufactured with electrolytic capacitor technology will be sufficient in not very complex applications. My research continues on minimisation, in order to bring radical solutions in line with the logic of this invention. As a result, the subject is generally signal processing, and this process can be realised in many different ways.

Claims

CLAIMS1. A system enabling the production of electronic components such as transistor, diode, varicap diode and variable compensation capacitor without using semiconductors, and enabling the control of the electric and magnetic fields between the two conductive plates of a fixed-capacitance capacitor, comprising:• at least one grid (5) positioned between the first conductive plate (3) and the second conductive plate (4), which, with its perforated structure, forms an output capacitance (11) between the first conductive plate (3) and the second conductive plate (4),• at least one first conductive plate (3) placed farther from the grid (5) relative to the second conductive plate (4),• at least one second conductive plate (4) placed closer to the grid (5) relative to the first conductive plate (3),• at least one thin dielectric plate (2) positioned between the second conductive plate (4) and the grid (5),• at least one thick dielectric plate (1) positioned between the first conductive plate (3) and the grid (5), which is thicker than the thin dielectric plate (2),• an input capacitance (10), which is between the grid (5) and the second conductive plate (4) and in which an input electric field (13) is formed when an input signal (18) in the form of alternating current is applied thereto, and• an output capacitance (11), which is between the first conductive plate (3) and the second conductive plate (4), in which, when direct current is applied, a constant output electric field (15) is formed, and in which, when the input signal (18) is applied to the input capacitance (10), an amplified waveform of the output signal (19) is obtained at its terminals.

2. The system for producing electronic components without using semiconductors according to Claim 1 , comprising a first grid (27) and a second grid (28), which, when alternating current is applied to the output capacitance (11 ) and they are positionedbetween the first conductive plate (3) and the second conductive plate (4), enable the system to perform a diode function when direct current is applied between them, and enable the system to perform a transistor function when direct current is applied to the output capacitance (11) and the input signal (18) is applied to the input capacitance (10).

3. The system for producing electronic components without using semiconductors according to Claim 1 , comprising a first grid (27) and a second grid (28), which, when they are positioned between the first conductive plate (3) and the second conductive plate (4) and different types of signals are applied thereto, enable the system to perform a mixer function.

4. The system for producing electronic components without using semiconductors according to Claim 1 , comprising a first conductive plate (3), a second conductive plate (4) and a grid (5), which are designed in a delta connection and connected to the three-phase mains, with a control voltage being sent to their control terminals by a microprocessor-based compensation relay (41), thereby enabling the capacitance values of the capacitors to function as variable capacitors simultaneously and at the value required.

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