Wafer-like sensor configured for sensor measurements in high-temperature environments and a process of implementing the same

Abstract

A wafer-like sensor includes at least one temperature sensor configured to obtain a temperature within the high temperature environment, a support substrate, a temperature circuit component arranged on the support substrate, an electrical interface arranged on the support substrate, at least one power interconnect arranged on the support substrate, at least one data interconnect arranged on the support substrate, and at least one sensor interconnect arranged on the support substrate. A process of implementing the wafer-like sensor is also disclosed.

Description

PATENTDocket No.: 131825.02150224-044-PRO / USWAFER-LIKE SENSOR CONFIGURED FOR SENSOR MEASUREMENTS IN HIGH- TEMPERATURE ENVIRONMENTS AND A PROCESS OF IMPLEMENTING THE SAMEFIELD OF THE DISCLOSURE

[0001] The disclosure relates to a wafer-like sensor configured for sensor measurements in high-temperature environments. Additionally, the disclosure relates to a process of implementing a wafer-like sensor configured for sensor measurements in high-temperature environments.BACKGROUND OF THE DISCLOSURE

[0002] Semiconductor processing systems are typically characterized by extremely clean environments and high-precision robotic systems that move substrates, such as semiconductor wafers, about various processing stations within a semiconductor processing system. Typically, information regarding an operation of the various processing stations is relevant to semiconductor processing.

[0003] In the past, attempts have been made to provide wafer-like sensors in the form of a wafer, which can be moved through the semiconductor processing system to convey information related to the semiconductor processing system. However, a number of the processing stations have high temperature environments that the waferlike sensors cannot be reliably used. The high temperature environments enable multiple failure modes within the wafer-like sensors quickly leading to failure of the wafer-like sensors.

[0004] Accordingly, a wafer-like sensor configured to reliably operate in high temperature environments is needed.

[0005] The disclosed device and process may address key issues with high- temperature Wafer-like sensors, including reliable electrical connections, enhanced adhesion, thermal expansion mismatch, strain-free centralized electrical connections, and the use of high-temperature resistant solid-state batteries to ensure sensor reliability and performance in semiconductor manufacturing environments.

[0006] The disclosed device and process may provide solutions for high- temperature sensor challenges on silicon wafers by utilizing high-temperaturePATENTDocket No.: 131825.02150224-044-PRO / US conductive adhesives for robust electrical connections, machining recesses in wafers for stronger adhesion, matching thermal expansion coefficients with materials like Kovar to prevent bond fractures, centralizing electrical connections to reduce strain and alignment issues, and incorporating solid-state batteries capable of withstanding high temperatures, thereby enhancing sensor reliability and performance in semiconductor fabrication settings.

[0007] As used herein, “wafer-like” is intended to mean a sensor in the form of a semiconductor wafer. Aspects of the disclosure provide wafer-like sensors that include types of detectors to allow the wafer-like sensor to measure a host of internal conditions within the processing environment of the semiconductor processing system. In particular aspects, the disclosed wafer-like sensors may be configured to measure a temperature within the processing environment of the semiconductor processing system.

[0008] In aspects, the disclosed wafer-like sensors enable measurements to be made at various points throughout the processing environment with reduced disruption of the internal environment as well as reduced disturbance of the wafer handling mechanisms and fabrication processes, such as baking, etching, physical vapor deposition, chemical vapor deposition, coating, rinsing, drying, and / or the like. The wafer-like sensor form factor enables measurements of process conditions with minimal observational uncertainty.SUMMARY OF THE DISCLOSURE

[0009] In one aspect, a wafer-like sensor includes at least one temperature sensor configured to obtain a temperature within the high temperature environment. The wafer-like sensor in addition includes a support substrate. The wafer-like sensor moreover includes a temperature circuit component arranged on the support substrate. The wafer-like sensor also includes an electrical interface arranged on the support substrate. The wafer-like sensor further includes at least one power interconnect arranged on the support substrate. The wafer-like sensor in addition includes at least one data interconnect arranged on the support substrate. The wafer-like sensor moreover includes at least one sensor interconnect arranged on the support substrate.PATENTDocket No.: 131825.02150224-044-PRO / US

[0010] In one aspect, a process includes configuring at least one temperature sensor to obtain a temperature within the high temperature environment. The process in addition includes providing a support substrate. The process moreover includes arranging a temperature circuit component on the support substrate. The process also includes arranging an electrical interface on the support substrate. The process further includes arranging at least one power interconnect on the support substrate. The process in addition includes arranging at least one data interconnect on the support substrate. The process moreover includes arranging at least one sensor interconnect on the support substrate.

[0011] There has thus been outlined, rather broadly, certain aspects of the disclosure in order that the detailed description thereof herein may be better understood, and in order that the present contribution to the art may be better appreciated. There are, of course, additional aspects of the disclosure that will be described below and which will form the subject matter of the claims appended hereto.

[0012] In this respect, before explaining at least one aspect of the disclosure in detail, it is to be understood that the disclosure is not limited in its application to the details of construction and to the arrangements of the components set forth in the following description or illustrated in the drawings. The disclosure is capable of aspects in addition to those described and of being practiced and carried out in various ways. Also, it is to be understood that the phraseology and terminology employed herein, as well as the abstract, are for the purpose of description and should not be regarded as limiting.

[0013] As such, those skilled in the art will appreciate that the conception upon which this disclosure is based may readily be utilized as a basis for the designing of other structures, methods and systems for carrying out the several purposes of the disclosure. It is important, therefore, that the claims be regarded as including such equivalent constructions insofar as they do not depart from the spirit and scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGSPATENTDocket No.: 131825.02150224-044-PRO / US

[0014] Figure 1 illustrates a top view of a wafer-like sensor according to aspects of the disclosure.

[0015] Figure 2 illustrates a side view of a wafer-like sensor according to aspects of the disclosure.

[0016] Figure 3 illustrates another side view of a wafer-like sensor according to aspects of the disclosure.

[0017] Figure 4 illustrates a top view of another wafer-like sensor according to aspects of the disclosure.

[0018] Figure 5 illustrates a top view of another wafer-like sensor according to aspects of the disclosure.

[0019] Figure 6 illustrates a partial perspective view of a wafer-like sensor according to aspects of the disclosure.

[0020] Figure 7 illustrates a partial top view of a wafer-like sensor according to Figure 6.

[0021] Figure 8 illustrates a partial perspective top view of a wafer-like sensor according to aspects of the disclosure.

[0022] Figure 9 illustrates a partial exploded perspective view of a wafer-like sensor according to aspects of the disclosure.

[0023] Figure 10 illustrates a further partial perspective top view of a wafer-like sensor according to Figure 8.

[0024] Figure 11 illustrates a further partial exploded perspective view of a waferlike sensor according to Figure 10.

[0025] Figure 12 illustrates a partial side view of a wafer-like sensor according to aspects of the disclosure.

[0026] Figure 13 illustrates a partial top view of a wafer-like sensor according to aspects of the disclosure.

[0027] Figure 14 illustrates a partial top view of another wafer-like sensor according to aspects of the disclosure.

[0028] Figure 15 illustrates a partial cross-sectional view of a wafer-like sensor according to aspects of the disclosure.PATENTDocket No.: 131825.02150224-044-PRO / US

[0029] Figure 16 illustrates a partial cross-sectional view of a wafer-like sensor according to aspects of the disclosure.

[0030] Figure 17 illustrates an exemplary process of implementing a wafer-like sensor according to aspects of the disclosure.

[0031] Figure 18 illustrates another exemplary process of implementing a waferlike sensor according to aspects of the disclosure.DETAILED DESCRIPTION

[0032] The disclosure will now be described with reference to the drawing figures, in which like reference numerals refer to like parts throughout.

[0033] Figure 1 illustrates a top view of a wafer-like sensor according to aspects of the disclosure.

[0034] Figure 2 illustrates a side view of a wafer-like sensor according to aspects of the disclosure.

[0035] Figure 3 illustrates another side view of a wafer-like sensor according to aspects of the disclosure.

[0036] In particular, Figure 1 illustrates a top view of a wafer-like sensor 100 that may include at least one sensor. In aspects, the wafer-like sensor 100 may be a waferlike temperature sensor. Although aspects of the disclosure describe implementation of the wafer-like sensor 100 with at least one temperature sensor, the wafer-like sensor 100 may be implemented with other types of sensors and / or with additional types of sensors. For example, chemical sensors, image sensors, monitoring sensors, position sensors, movement sensors, and / or the like.

[0037] The wafer-like sensor 100 may include at least one temperature sensor 102, a temperature circuit component 104, an electrical interface 106, a battery component 108, at least one power interconnect 110, at least one data interconnect 112, at least one sensor interconnect 114, a support substrate 116, and / or the like.

[0038] In aspects, the wafer-like sensor 100 may be configured to be utilized in a system having a high temperature environment 906. In aspects, the high temperature environment 906 may be part of a fabrication system, a fabrication device, a semiconductor fabrication system, a semiconductor fabrication device, a processingPATENTDocket No.: 131825.02150224-044-PRO / US station, a semiconductor processing station, and / or the like. In aspects, the wafer-like sensor 100 may be configured obtain a temperature within the high temperature environment 906 with the at least one temperature sensor 102. In aspects, the waferlike sensor 100 may be configured to be utilized during semiconductor fabrication and / or the semiconductor fabrication device to obtain a temperature within the high temperature environment 906 thereof with the at least one temperature sensor 102. In aspects, the high temperature environment 906 may be related to heating, baking, etching, physical vapor deposition, chemical vapor deposition, coating, rinsing, drying, and / or the like.

[0039] In aspects, the at least one temperature sensor 102 may provide and / or output temperature readings to the at least one sensor interconnect 114, which may deliver the temperature readings from the at least one temperature sensor 102 to the temperature circuit component 104. Additionally, components of the wafer-like sensor 100 may be powered by the battery component 108. In aspects, these processes may take place within the high temperature environment 906. In other aspects, components of the wafer-like sensor 100 may be powered utilizing other power delivery mechanisms including wired power delivery mechanisms, inductive power delivery mechanisms, and / or the like.

[0040] In aspects, components of the wafer-like sensor 100 may be powered by the battery component 108 via the at least one power interconnect 110. In aspects, the at least one temperature sensor 102 and the temperature circuit component 104 may be powered by the battery component 108 via the at least one power interconnect 110.

[0041] Further, the temperature circuit component 104 may process and / or provide the temperature readings to the electrical interface 106. In aspects, once the wafer-like sensor 100 has been removed from the high temperature environment 906, the electrical interface 106 may connect to and provide the temperature readings to a separate component 904 as illustrated in Figure 3. In aspects, the separate component 904 may be located outside of the high temperature environment 906. In aspects, the separate component 904 may include a substrate support 160 to support the wafer-like sensor 100. In aspects, the separate component 904 may be a case that includes thePATENTDocket No.: 131825.02150224-044-PRO / US substrate support 160 to support the wafer-like sensor 100. In aspects, the separate component 904 may include at least one electrical connection 908 configured to connect to the wafer-like sensor 100 and / or the electrical interface 106.

[0042] Accordingly, implementation of the wafer-like sensor 100 and / or the electrical interface 106 may be configured to be implemented without wires, without data wires, without power wires, without wireless RF transmission, without externally connected wires, without externally connected data wires, without externally connected power wires, and / or the like during temperature acquisition within the high temperature environment 906.

[0043] In aspects, components of the wafer-like sensor 100 may be configured and implemented to operate in harsh environments including the high temperature environment 906. In aspects, the semiconductor fabrication device may include the high temperature environment 906. In aspects, components of the wafer-like sensor 100 may be configured and implemented to operate in the high temperature environment 906 during a temperature sensing time period.

[0044] In aspects, the high temperature environment 906 is defined herein as an environment having temperatures in Celsius (C) in excess of 150° C, 200° C, 300° C, or 400° C. In aspects, the high temperature environment 906 is defined herein as an environment having temperatures in the range of 150° C - 200° C, 150° C - 300° C, 150° C - 400° C, 150° C - 500° C, 200° C - 300° C, 200° C - 400° C, 200° C - 500° C, 200° C - 600° C, or 300° C - 600° C. In aspects, the high temperature environment 906 is defined herein as an elevated temperature environment, a higher temperature environment, and / or the like.

[0045] In aspects, a temperature sensing time period may be from 1 minute - 6 minutes, 1 minute - 2 minutes, 2 minutes - 3 minutes, 3 minutes - 4 minutes, 4 minutes - 5 minutes, 5 minutes - 6 minutes, or 2 minutes - 4 minutes. In aspects, a temperature sensing time period may be less than 1 minute, 2 minutes, 3 minutes, 4 minutes, 5 minutes, 6 minutes, or 7 minutes. However, depending on a temperature of the high temperature environment 906, a specific implementation of the wafer-like sensor 100,PATENTDocket No.: 131825.02150224-044-PRO / US and / or the like, the temperature sensing time period may be any amount of time including a number of hours and / or an infinite temperature sensing time period.

[0046] In aspects, the support substrate 116 may have a circular shape, a square shape, a rectangular shape, a semiconductor wafer shape, and / or the like. As illustrated in Figure 1 , the support substrate 116 is shown with a circular shape and / or a semiconductor wafer shape. In aspects, the support substrate 116 may have standard semiconductor wafer dimensions. In aspects, the support substrate 116 may have dimensions of 100 mm - 600 mm in diameter for circular implementations of the support substrate 116. In aspects, the support substrate 116 may have side dimensions of 100 mm - 600 mm for rectangular or square implementations of the support substrate 116.

[0047] In aspects, the support substrate 116 may be formed from silicon, silicon carbide, Sapphire, glass, another semiconductor wafer material, combinations thereof, and / or the like. In aspects, the support substrate 116 may be formed from silicon, intrinsic silicon, chemically pure silicon, and / or the like. In aspects, the support substrate 116 may include an upper substrate surface 118, at least one substrate side surface 120, and a bottom substrate surface 122 as illustrated in Figure 2. In aspects, the support substrate 116 may be configured and implemented to operate in harsh environments including the high temperature environment 906 during a temperature sensing time period.

[0048] In aspects, the at least one temperature sensor 102 may be configured and implemented to operate in harsh environments including the high temperature environment 906 during a temperature sensing time period. In aspects, the at least one temperature sensor 102 may be implemented as a resistance temperature detector (RTD). In aspects, the at least one temperature sensor 102 may be implemented as a resistance temperature detector (RTD), a thermistor, a thermocouple, a resistance thermometer, a silicon bandgap temperature sensor, and / or the like.

[0049] In aspects, the wafer-like sensor 100 may implement a plurality of the at least one temperature sensor 102 in various locations on the support substrate 116. In aspects, the wafer-like sensor 100 may implement a plurality of the at least one temperature sensor 102 in various locations on the upper substrate surface 118 of thePATENTDocket No.: 131825.02150224-044-PRO / US support substrate 116. In aspects, the wafer-like sensor 100 may implement a plurality of the at least one temperature sensor 102 in locations on the upper substrate surface 118 of the support substrate 116 adjacent the at least one substrate side surface 120.

[0050] In aspects, the temperature circuit component 104 and the battery component 108 may be implemented as separate components. In other aspects, the temperature circuit component 104 and the battery component 108 may be implemented as combined components.

[0051] In aspects, the at least one temperature sensor 102, the temperature circuit component 104, the electrical interface 106, the battery component 108, the at least one power interconnect 110, the at least one data interconnect 112, the at least one sensor interconnect 114, and / or the like of the wafer-like sensor 100 may be arranged on the upper substrate surface 118. In aspects, the at least one temperature sensor 102, the at least one power interconnect 110, the at least one data interconnect 112, the at least one sensor interconnect 114, and / or the like may be arranged on the upper substrate surface 118 with intervening layers therebetween, and / or arranged directly on the upper substrate surface 118. In particular, aspects of the wafer-like sensor 100 may be configured such that the support substrate 116 includes no vias, no apertures, no through holes, and / or the like to limit heat transfer from the bottom substrate surface 122 while in the high temperature environment 906.

[0052] In aspects, the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 may extend on the upper substrate surface 118 along a lateral axis 901 , along a longitudinal axis 902, and / or along both the lateral axis 901 and the longitudinal axis 902. In aspects, the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 may extend on the upper substrate surface 118 and connect to the at least one temperature sensor 102, the temperature circuit component 104, the electrical interface 106, the battery component 108, and / or the like. In aspects, there may be multiple implementations of the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114.PATENTDocket No.: 131825.02150224-044-PRO / US

[0053] In aspects, the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 may be metallic traces arranged on the upper substrate surface 118. In aspects, the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 may be silver traces arranged on the upper substrate surface 118. In aspects, the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 may be implemented with no crossovers, no vias, and / or the like.

[0054] In aspects, components of the wafer-like sensor 100 may be configured and implemented to operate in harsh environments including a low temperature environment, such as a cryogenic environment. In aspects, components of the waferlike sensor 100 may be configured and implemented to operate in the low temperature environment during a temperature sensing time period.

[0055] In aspects, the low temperature environment is defined herein as an environment having temperatures in Celsius (C) less than (colder) - 50° C, - 100° C, - 150° C, or - 200° C. In aspects, the low temperature environment is defined herein as an environment having temperatures in the range of - 50° C to - 100° C, - 50° C to - 150° C, - 50° C to - 200° C, - 100° C to - 150° C, or - 150° C to - 200° C.

[0056] The aspects of the wafer-like sensor 100 illustrated in Figures 1 - 3 and described therewith, may optionally be implemented in any other aspects of the waferlike sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the wafer-like sensor 100 illustrated in Figures 1 - 3.

[0057] Figure 4 illustrates a top view of another wafer-like sensor according to aspects of the disclosure.

[0058] In particular, Figure 4 illustrates an exemplary implementation of the wafer-like sensor 100 and an arrangement of the at least one temperature sensor 102, the temperature circuit component 104, the electrical interface 106, the battery component 108, and / or the like. In particular, Figure 4 illustrates multiplePATENTDocket No.: 131825.02150224-044-PRO / US implementations of the at least one temperature sensor 102, the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114, arranged on the upper substrate surface 118. In this regard, only a limited number of the at least one temperature sensor 102, the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 are provided with a reference numeral so as to provide clarity of illustration.

[0059] Further, the wafer-like sensor 100 may include at least one alignment feature 190. In aspects, the separate component 904 may include at least one corresponding alignment feature (not shown). The at least one alignment feature 190 of the wafer-like sensor 100 may align the wafer-like sensor 100 with respect to the separate component 904 and / or the at least one corresponding alignment feature of the separate component 904. In aspects, the at least one alignment feature 190 may be configured to ensure that the wafer-like sensor 100 and / or the electrical interface 106 are oriented and / or positioned with respect to the separate component 904 and / or the at least one electrical connection 908.

[0060] The aspects of the wafer-like sensor 100 illustrated in Figure 4 and described therewith, may optionally be implemented in any other aspects of the waferlike sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the wafer-like sensor 100 illustrated in Figure 4.

[0061] Figure 5 illustrates a top view of another wafer-like sensor according to aspects of the disclosure.

[0062] In particular, Figure 5 illustrates an exemplary implementation of the wafer-like sensor 100 and an arrangement of the at least one temperature sensor 102, the temperature circuit component 104, the electrical interface 106, the battery component 108, the at least one sensor interconnect 114, the at least one alignment feature 190, and / or the like. In particular, Figure 4 illustrates multiple implementations of the at least one temperature sensor 102, the at least one power interconnect 110, the atPATENTDocket No.: 131825.02150224-044-PRO / US least one data interconnect 112, and / or the at least one sensor interconnect 114, arranged on the upper substrate surface 118. In this regard, only a limited number of the at least one temperature sensor 102, the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 are provided with reference numerals so as to provide clarity of illustration.

[0063] The aspects of the wafer-like sensor 100 illustrated in Figure 5 and described therewith, may optionally be implemented in any other aspects of the waferlike sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the wafer-like sensor 100 illustrated in Figure 5.

[0064] Figure 6 illustrates a partial perspective view of a wafer-like sensor according to aspects of the disclosure.

[0065] Figure 7 illustrates a partial top view of a wafer-like sensor according to Figure 6.

[0066] In particular, Figure 6 illustrates a partial perspective view of the wafer-like sensor 100 with exemplary details of the at least one temperature sensor 102 and associated structure and / or components. Aspects of the wafer-like sensor 100 may address a number of problems of implementation in the high temperature environment 906. In this regard, problems with high-temperature sensors mounted onto substrates, such as silicon wafers, is how to make electrical connections to the sensors. There are limitations on materials because: a) some materials such as gold and copper are potential contaminants in semiconductor fabrication devices, b) the high temperature limits usable materials, and c) contamination of the fabrication equipment must be avoided.

[0067] One method of electrical connection to small sensors is by wire bonding. However, wire bonding may not work with all contact materials. Aspects of the waferlike sensor 100 may use conductive adhesives that can withstand high temperatures to connect to the temperature sensors. Accordingly, the at least one temperature sensor 102 may be attached to the at least one sensor interconnect 114 with a conductivePATENTDocket No.: 131825.02150224-044-PRO / US adhesive 124. In aspects, the conductive adhesive 124 may be configured to withstand high temperatures and / or the high temperature environment 906. In aspects, the conductive adhesive 124 may include silver, nickel, copper, graphite, aluminum, and / or the like; and in aspects the conductive adhesive 124 may include a binder that may include varnish, synthetic resin, silicone, epoxy, ceramic, and / or the like. However, in aspects, the wafer-like sensor 100 may alternatively or additionally include wire bonding, wire bonds, laser wire bonding, and / or the like instead of the conductive adhesive 124 and / or in addition to the conductive adhesive 124.

[0068] In aspects, the at least one sensor interconnect 114 may extend along the upper substrate surface 118 to a point adjacent the at least one temperature sensor 102. In aspects, there may be at least two implementations of the at least one sensor interconnect 114 extending along the upper substrate surface 118 to a point adjacent the at least one temperature sensor 102 as illustrated in Figure 6. In aspects, there may be at least two implementations of the at least one sensor interconnect 114 for each implementation of the at least one temperature sensor 102. In aspects, there may be at least three implementations of the at least one sensor interconnect 114 for each implementation of the at least one temperature sensor 102 as illustrated in Figure 7.

[0069] Further, the at least one temperature sensor 102 may include signal pads 126 arranged on a surface of the at least one temperature sensor 102. In aspects, the at least one temperature sensor 102 may include two implementations of the signal pads 126. In aspects, one of the signal pads 126 may receive power, current, and / or voltage and another one of the signal pads 126 may output a temperature signal.

[0070] In aspects, a first portion of the conductive adhesive 124 may be arranged on a first implementation of the at least one sensor interconnect 114 and a first implementation of the signal pads 126; and a second portion of the conductive adhesive 124 may be arranged on a second implementation of the at least one sensor interconnect 114 and a second implementation of the signal pads 126. Thus, the at least one temperature sensor 102 may be powered and / or excited, generate temperature signals, and provide the temperature signals through one of the signal pads 126, the conductive adhesive 124, and the at least one sensor interconnect 114.PATENTDocket No.: 131825.02150224-044-PRO / USAdditionally, the conductive adhesive 124 may further contact the upper substrate surface 118 to provide additional adhesion. In aspects, the at least one sensor interconnect 114 may extend along the lateral axis 901 , the longitudinal axis 902, or both the lateral axis 901 and the longitudinal axis 902. In aspects, multiple implementations of the at least one temperature sensor 102 may be connected to each other and to the temperature circuit component 104 in a number of different ways. In aspects, multiple implementations of the at least one temperature sensor 102 may each be connected individually. In aspects, multiple implementations of the temperature circuit component 104 may be connected in a type of matrix where individual temperature values may be deduced by a logical deduction from a series measurements. In aspects, multiple implementations of the temperature circuit component 104 may be connected and powered in strings of sensors in series where each junction point may be measured.

[0071] In aspects, the at least one temperature sensor 102 may be arranged on the upper substrate surface 118 and / or within the upper substrate surface 118; and the at least one temperature sensor 102 may be attached to the upper substrate surface 118 with a high temperature adhesive 128. In particular, a bottom surface of the at least one temperature sensor 102 and a surface of the support substrate 116 may include the high temperature adhesive 128 therebetween. In aspects, the high temperature adhesive 128 may include ceramic, varnish, synthetic resin, silicone, epoxy, inorganic in composition (e.g. water glass), a polyimide and / or the like. In aspects, an area of the upper substrate surface 118 adjacent the at least one temperature sensor 102 may include a roughened surface area to increase adhesion of the high temperature adhesive 128.

[0072] In aspects, the support substrate 116 may include a substrate recess 130. In aspects, the substrate recess 130 may extend through the upper substrate surface 118. In aspects, the substrate recess 130 may include a bottom surface and at least one side surface. In aspects, a bottom surface of the at least one temperature sensor 102 and the bottom surface of the substrate recess 130 may include the high temperature adhesive 128 therebetween. In aspects, an area of the substrate recessPATENTDocket No.: 131825.02150224-044-PRO / US130 adjacent the at least one temperature sensor 102 may include a roughened surface area to increase adhesion of the high temperature adhesive 128. In aspects, the at least one side surface of the substrate recess 130 may include the conductive adhesive 124 adjacent the at least one temperature sensor 102. In aspects, an area of the substrate recess 130 adjacent the at least one temperature sensor 102 may include a roughened surface area to increase adhesion of the conductive adhesive 124.

[0073] Accordingly, Figure 6 illustrates a cross section of a sensor sitting in a recess in a silicon wafer. In particular, the at least one temperature sensor 102 sitting in the substrate recess 130 of the support substrate 116. The at least one temperature sensor 102, which may be a RTD sensor, may be cemented into the substrate recess 130 with a high-temperature adhesive implementation of the high temperature adhesive 128. Then, the conductive adhesive 124 may connect each end of the at least one temperature sensor 102 to implementations of the at least one sensor interconnect 114 configured as conductive traces on the support substrate 116 implemented as a wafer.

[0074] The aspects of the wafer-like sensor 100 illustrated in Figures 6 - 7 and described therewith, may optionally be implemented in any other aspects of the waferlike sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the wafer-like sensor 100 illustrated in Figures 6 - 7.

[0075] Figure 8 illustrates a partial perspective top view of a wafer-like sensor according to aspects of the disclosure.

[0076] Figure 9 illustrates a partial exploded perspective view of a wafer-like sensor according to aspects of the disclosure.

[0077] Figure 10 illustrates a further partial perspective top view of a wafer-like sensor according to figure 8.

[0078] Figure 11 illustrates a further partial exploded perspective view of a waferlike sensor according to Figure 10.

[0079] In particular, Figure 8 illustrates that the wafer-like sensor 100 may include a mounting structure 132 for mounting the temperature circuit component 104 and / orPATENTDocket No.: 131825.02150224-044-PRO / US the battery component 108 to the support substrate 116 and / or the upper substrate surface 118. In aspects, the mounting structure 132 may be configured to allow for thermal expansion of components of the wafer-like sensor 100. In aspects, the mounting structure 132 may be configured to allow for thermal expansion of the temperature circuit component 104 and / or the battery component 108. In aspects, there may be an implementation of the mounting structure 132 on at least two sides the temperature circuit component 104 and / or the battery component 108. In aspects, the mounting structure 132 may position the temperature circuit component 104 and / or the battery component 108 above the support substrate 116 and / or the upper substrate surface 118 along a vertical axis 903 to limit heat transfer from the upper substrate surface 118 that is transferred from the bottom substrate surface 122 that may be exposed to greater heat from the high temperature environment 906.

[0080] In aspects, the mounting structure 132 may include at least one anchor structure 134. In aspects, the at least one anchor structure 134 may be configured to be attached on or within the support substrate 116 and / or the upper substrate surface 118. In aspects, the at least one anchor structure 134 may be configured to be attached on or within the support substrate 116 and / or the upper substrate surface 118 with the high temperature adhesive 128 illustrated in Figure 9. In aspects, the high temperature adhesive 128 may be located between the at least one anchor structure 134 and the support substrate 116 and / or the upper substrate surface 118. In aspects, the at least one anchor structure 134 may position the temperature circuit component 104 and / or the battery component 108 above the support substrate 116 and / or the upper substrate surface 118 along the vertical axis 903 to limit heat transfer from the bottom substrate surface 122 and the high temperature environment 906.

[0081] In aspects, the mounting structure 132 may include a mounting component 136. The mounting component 136 may be attached to the temperature circuit component 104 and / or the battery component 108. Further, the mounting component 136 may be attached to the at least one anchor structure 134. In aspects, the mounting component 136 and / or the at least one anchor structure 134 may be configured to allow for movement therebetween to allow for thermal expansion of thePATENTDocket No.: 131825.02150224-044-PRO / US temperature circuit component 104, the battery component 108, and / or other components of the wafer-like sensor 100.

[0082] In aspects, the mounting structure 132 may include a holder 138. In aspects, the holder 138 may hold the mounting component 136 to the at least one anchor structure 134. In aspects, the holder 138 may be fastened to the at least one anchor structure 134. In aspects, the holder 138 may be fastened to the at least one anchor structure 134 with mechanical fasteners 140.

[0083] Additionally, the wafer-like sensor 100 may include a cover 142. The cover may cover an end 144 of the temperature circuit component 104 and / or the battery component 108. In aspects, the end 144 of the temperature circuit component 104 and / or the battery component 108 may include the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 extending therefrom as illustrated in Figure 9. In aspects, the cover 142 may be attached to the at least one anchor structure 134. In aspects, the cover 142 may be attached to the at least one anchor structure 134 with mechanical fasteners 146.

[0084] With reference to Figure 10 and Figure 11 , the at least one anchor structure 134 may include a retaining slot 148. In aspects, the retaining slot 148 may be configured to receive the mounting component 136. Further, the retaining slot 148 may allow for movement of the mounting component 136 along the lateral axis 901 with respect to the at least one anchor structure 134. In aspects, the mounting component 136 may be implemented as a rod extending from a side of the temperature circuit component 104 and / or the battery component 108 and also extending along the lateral axis 901. In aspects, the retaining slot 148 may extend along the lateral axis 901. In aspects, the mounting component 136 may be implemented as a rod extending from a side of the temperature circuit component 104 and / or the battery component 108 and also extending along the lateral axis 901 and / or the longitudinal axis 902. In aspects, the retaining slot 148 and the mounting component 136 may extend along the lateral axis 901 . Alternatively, the retaining slot 148 and the mounting component 136 may extend along the longitudinal axis 902.PATENTDocket No.: 131825.02150224-044-PRO / US

[0085] In aspects, the retaining slot 148 may allow for movement of the mounting component 136 along the lateral axis 901 , the longitudinal axis 902, and / or the vertical axis 903. In particular, the retaining slot 148 may allow a sliding movement of the mounting component 136 with respect to the at least one anchor structure 134; and / or the retaining slot 148 may allow rotating movement of the mounting component 136 with respect to the at least one anchor structure 134.

[0086] Accordingly, the combination of the at least one anchor structure 134, the retaining slot 148, the mounting component 136 and / or the like may allow movement therebetween to allow for thermal expansion of the temperature circuit component 104 and / or the battery component 108. In particular, the mounting structure 132 may allow a movement of the temperature circuit component 104 and / or the battery component 108 with respect to the support substrate 116 due to thermal expansion thereof. In aspects, the retaining slot 148 may be arranged on an upper surface of the at least one anchor structure 134. In aspects, the holder 138 may retain the mounting component 136 within the retaining slot 148.

[0087] As illustrated in Figure 11 , the support substrate 116 and / or the upper substrate surface 118 may include substrate recesses 150. In aspects, the substrate recesses 150 may extend into the support substrate 116 and / or the upper substrate surface 118 along the vertical axis 903.

[0088] Further, the at least one anchor structure 134 may include extensions 152 at corresponding locations to the substrate recesses 150. In aspects, the extensions 152 may extend from the at least one anchor structure 134 along the vertical axis 903.

[0089] Accordingly, the extensions 152 may be inserted into the substrate recesses 150 to hold the at least one anchor structure 134, the temperature circuit component 104 and / or the battery component 108 on the support substrate 116. In aspects, the high temperature adhesive 128 may be located between the substrate recesses 150 and the extensions 152.

[0090] In aspects, implementations of the substrate recesses 150 and the extensions 152 may be arranged along the lateral axis 901 , implementations of the substrate recesses 150 and the extensions 152 may be arranged along the longitudinalPATENTDocket No.: 131825.02150224-044-PRO / US axis 902, and / or implementations of the substrate recesses 150 and the extensions 152 may be arranged along the lateral axis 901 and the longitudinal axis 902.

[0091] Accordingly, the mounting structure 132 may be configured to address problems with mounting components to the support substrate 116, such as a silicon wafer, and obtaining good adhesion. In this regard Silicon wafer implementations of the support substrate 116 may be highly polished, and the upper substrate surface 118 may not bond well with most adhesives. In addition, in the wafer-like sensor 100 the adhesive must withstand high temperatures. Most adhesives that can withstand high temperatures do not have high bond strengths. Aspects of the disclosure may address this issue by machining the substrate recesses 150 into the silicon wafer that match the extensions 152 in the at least one anchor structure 134 and provide more area for adhesion and put some of the interface into shear where adhesives are generally stronger. In aspects, the substrate recesses 150 may be laser-machined recesses. In aspects, the at least one anchor structure 134 implement the extensions 152 as matching protrusions that mate with the substrate recesses implemented by the substrate recesses 150. The interface between the two may be filled with a high- temperature adhesive, such as the high temperature adhesive 128. In aspects, an area of the upper substrate surface 118 adjacent and / or within the substrate recesses 150 may include a roughened surface area to increase adhesion of the high temperature adhesive 128 and / or the at least one anchor structure 134.

[0092] A problem with mounting components to a silicon wafer is expansion mismatch. Because of the high peak temperature and the repeated cycling to high temperature, any mismatch in expansion coefficient will tend to fracture the adhesive bond between the anchoring part and the wafer. In aspects of the wafer-like sensor 100, the at least one anchor structure 134 may be implemented as a Kovar anchor, a molybdenum anchor, a tungsten anchor, and / or an invar anchor so as to match a coefficient of thermal expansion (CTE) of a material of the support substrate 116, such as a silicon wafer implementation of the support substrate 116.

[0093] In aspects, materials of the at least one anchor structure 134 and / or the support substrate 116 may have thermal expansion matching, matching thermalPATENTDocket No.: 131825.02150224-044-PRO / US expansion properties, matching CTEs, and / or the like. In this regard, matching may include values of CTEs in ppm per degree C that are within 2, 2.5, or 3 ppm per degree C.

[0094] The aspects of the wafer-like sensor 100 illustrated in Figures 8 - 11 and described therewith, may optionally be implemented in any other aspects of the waferlike sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the wafer-like sensor 100 illustrated in Figures 8 - 11.

[0095] Figure 12 illustrates a partial side view of a wafer-like sensor according to aspects of the disclosure.

[0096] In aspects of the disclosure, the various components of the wafer-like sensor 100 may be interchangeable. For example, the temperature circuit component 104 may be configured to be interchangeable with another implementation of the temperature circuit component 104. This may be due to failure of the initial implementation of the temperature circuit component 104 an improved implementation of the temperature circuit component 104, and / or the like. Likewise, the battery component 108 may be configured to be interchangeable.

[0097] In aspects, to allow a user to quickly and easily interchange an implementation of the temperature circuit component 104 and / or the battery component 108, the wafer-like sensor 100 may be configured with contact connectors 154 and / or contact pads 156. The contact connectors 154 and / or the contact pads 156 may allow the temperature circuit component 104 and / or the battery component 108 to be easily electrically connected to and disconnected from to the wafer-like sensor 100.

[0098] In aspects, the contact connectors 154 may be arranged on a bottom surface of the temperature circuit component 104 and / or the battery component 108 and may be configured to connect to one of the at least one power interconnect 110, the at least one data interconnect 112, or the at least one sensor interconnect 114 via the contact pads 156. This is illustrated on the left side connection in Figure 12.PATENTDocket No.: 131825.02150224-044-PRO / US

[0099] In aspects, the contact connectors 154 may be arranged on the upper substrate surface 118 and a bottom surface of the temperature circuit component 104 and / or the battery component 108 may be configured with the contact pads 156 to connect to one of the contact connectors 154. This is illustrated on the right side connection in Figure 12.

[0100] In aspects, the contact connectors 154 and / or the contact pads 156 may be arranged on the upper substrate surface 118, the at least one power interconnect 110, the at least one data interconnect 112, or the at least one sensor interconnect 114 along a lateral axis 901 , a longitudinal axis 902, and / or both. In aspects, the contact connectors 154 and / or the contact pads 156 may extend along the bottom surface of the temperature circuit component 104 and / or the battery component 108 along a lateral axis 901 , a longitudinal axis 902, and / or both. In aspects, the contact connectors 154 may be pins, bumps, pillars, mechanical connectors, extensions, and / or the like.

[0101] In this regard, devices of the wafer-like sensor 100 may be operating in harsh environments including the ones operating at high temperatures. Accordingly, the devices of the wafer-like sensor 100 can suffer from damage when exposed to such adverse conditions. When that happens, typically a device has to be fixed or if the damage is not fixable replaced. Since such typical devices are generally factory sealed to protect from the harsh environment, fixing damaged sub-components can be very difficult since any attempt to break the factory seal might further damage the device.

[0102] To address that issue, the wafer-like sensor 100 may implement the contact connectors 154 and / or the contact pads 156 so that components of the waferlike sensor 100, such as the temperature circuit component 104 and / or the battery component 108 can be easily replaced since the temperature circuit component 104 and / or the battery component 108 may be implemented as separate subassemblies. These subassemblies may be connected to the wafer-like sensor 100 via a mechanical locking mechanism utilizing the mounting structure 132 as previously described.

[0103] In the instance of electronics failure or damage to components of the wafer-like sensor 100, the two can be separated and only damaged components replaced reducing waste and reusing still functioning components. It also allows forPATENTDocket No.: 131825.02150224-044-PRO / US future upgrades to the wafer-like sensor 100, the temperature circuit component 104, and / or the battery component 108.

[0104] Accordingly, electronic components of the wafer-like sensor 100, such as the temperature circuit component 104 and / or the battery component 108 can be interfaced with sensors, such as the at least one temperature sensor 102 on the waferlike sensor 100 via pins or bumps incorporated into the bottom of the enclosure or the top of the wafer-like substrate with receiving pads on the opposite mating surface where mechanical contact creates electrical connection. The electrical connection can be also realized by wire-bonding, soldering, via a connector, and / or the like.

[0105] The aspects of the wafer-like sensor 100 illustrated in Figure 12 and described therewith, may optionally be implemented in any other aspects of the waferlike sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the wafer-like sensor 100 illustrated in Figure 12.

[0106] Figure 13 illustrates a partial top view of a wafer-like sensor according to aspects of the disclosure.

[0107] Figure 14 illustrates a partial top view of another wafer-like sensor according to aspects of the disclosure.

[0108] As illustrated in Figure 13 and Figure 14, the wafer-like sensor 100 may implement the electrical interface 106 with a plurality of electrical connections 158. The plurality of electrical connections 158 may connect to corresponding implementations of the at least one electrical connection 908 arranged on the separate component 904. In aspects, the plurality of electrical connections 158 may be implemented with pads, pins, contacts, and / or the like. In aspects, the at least one electrical connection 908 may be implemented with pads, pins, contacts, and / or the like. In aspects, the at least one alignment feature 190 illustrated in Figure 4 and Figure 5 may be configured to ensure that the plurality of electrical connections 158 are correctly oriented and / or positioned with respect to the at least one electrical connection 908.PATENTDocket No.: 131825.02150224-044-PRO / US

[0109] In aspects, the wafer-like sensor 100 may implement the plurality of electrical connections 158 to transfer power to the battery component 108 and / or the temperature circuit component 104 from the separate component 904. In aspects, the wafer-like sensor 100 may implement the plurality of electrical connections 158 to transfer data, instructions, updates, and / or the like between the temperature circuit component 104 and the separate component 904; and / or the wafer-like sensor 100 may implement the plurality of electrical connections 158 to transfer data, instructions, updates, and / or the like between the temperature circuit component 104 and the separate component 904.

[0110] In aspects, one or more of the plurality of electrical connections 158 may be implemented as power connections, data connections, transmission protocol connections, and / or the like. In aspects, the separate component 904 may provide power through one or more of the plurality of electrical connections 158; the separate component 904 may exchange data through one or more of the plurality of electrical connections 158; the separate component 904 may exchange transmission protocol transmissions through one or more of the plurality of electrical connections 158; the separate component 904 may provide software and / or firmware updates through one or more of the plurality of electrical connections 158; and / or the like.

[0111] In aspects, the plurality of electrical connections 158 may be arranged on the support substrate 116 and / or the upper substrate surface 118. In aspects, the plurality of electrical connections 158 may connect to one or more of the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114. In aspects, one or more of the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 may be routed under areas approximate to the electrical interface 106 adjacent the plurality of electrical connections 158.

[0112] In aspects as shown in Figure 13, the plurality of electrical connections 158 may be arranged on the upper substrate surface 118 in a symmetrical pattern. In aspects as shown in Figure 14, the plurality of electrical connections 158 may be arranged on the upper substrate surface 118 in an asymmetrical pattern.PATENTDocket No.: 131825.02150224-044-PRO / US

[0113] A problem with electrical devices mounted on silicon wafers is how to make electrical connections to external equipment such as battery chargers. The connections must not put strain on the wafer. The connections must not generate particles. And the connection should be made in such a way that precise alignment of the wafer to the interface is not required. Aspects of the wafer-like sensor 100 implementing the plurality of electrical connections 158 may be configured to put all the plurality of electrical connections 158 in the center of the support substrate 116, where slight rotational misalignment can be tolerated. By doing this, the plurality of electrical connections 158 may be combined with the substrate support 160 underneath the support substrate 116 which protects the support substrate 116 from fracture during transportation. The substrate support 160 is illustrated in Figure 3. It should be noted that a number of the plurality of electrical connections 158 is not limited to six connections as shown in the figures.

[0114] The aspects of the wafer-like sensor 100 illustrated in Figures 13 - 14 and described therewith, may optionally be implemented in any other aspects of the waferlike sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the wafer-like sensor 100 illustrated in Figures 13 - 14.

[0115] Figure 15 illustrates a partial cross-sectional view of a wafer-like sensor according to aspects of the disclosure.

[0116] In particular, Figure 15 illustrates the battery component 108 arranged on the upper substrate surface 118 of the support substrate 116. In aspects, the battery component 108 may include at least one battery 162, a battery housing 164, and / or the like. The at least one battery 162 may be arranged within the battery housing 164 and the at least one battery 162 may provide power to various components of the wafer-like sensor 100 through the contact connectors 154, the contact pads 156, the at least one power interconnect 110, and / or the like.

[0117] In aspects, the at least one battery 162 may be implemented as a solid- state battery, a quasi-solid-state battery, a supercapacitor, coin cells, and / or the like. InPATENTDocket No.: 131825.02150224-044-PRO / US aspects, the at least one battery 162 may be configured to withstand 125° C or more. In aspects, the at least one battery 162 may be configured to withstand the high temperature environment 906 for a temperature sensing time period.

[0118] Often the limitation on electrical measuring devices is battery temperature. Most rechargeable batteries cannot withstand more than 70-80 degrees C. But many electronic circuit components can withstand 125 degrees C or more. The wafer-like sensor 100 may use solid-state or quasi-solid-state batteries that can withstand 125 degrees C or more. As an alternative, a supercapacitor can be used.

[0119] Further, the battery housing 164 may be configured as a vacuum enclosure to provide additional insulation from the high temperature environment 906. In aspects, the battery housing 164 may include a vacuum connection 166 arranged on the battery housing 164 to allow for air to be evacuated from the battery housing 164. Accordingly, the electronics of the battery component 108 including the at least one battery 162 and / or the like may be thermally isolated by making the battery housing 164 vacuum tight and by pulling a vacuum on the battery housing 164 utilizing, for example, the vacuum connection 166, to reduce conduction and convection from the walls of the battery housing 164 to components of the battery component 108.

[0120] Additionally, the battery component 108 may implement getters 168. In aspects, the getters 168 may utilize a reactive material arranged in the battery housing 164 to complete and maintain the vacuum therein. In aspects, the getters 168 may be configured to remove small amounts of gas from the evacuated space of the battery housing 164. In aspects, the getters 168 may be implemented as one or more of a flashed getter, a coating getter, a bulk getter, a getter pump or sorption pump, an ion getter pump, and / or the like. In aspects, the getters 168 may be powered and receive power through the at least one power interconnect 110 and / or the mounting structure 132. In this regard, the mounting structure 132 may be configured to deliver power to the getters 168 for powering the same. In aspects, the getters 168 may be configured and / or implemented to be activated by application of power. The application of power may heat them up and cause a reaction in the constituents thereof. In aspects, the activation of the getters 168 may happen after they have been sealed in a vacuumPATENTDocket No.: 131825.02150224-044-PRO / US environment. Thereafter, the power may be removed and the getters 168 may operate through the rest of its life passively.

[0121] Further, the battery component 108 may include thermal isolation pads 170. In aspects, the thermal isolation pads 170 may be arranged between the at least one battery 162 and the battery housing 164. In aspects, the thermal isolation pads 170 may be implemented as thin mica pads. In aspects, the thermal isolation pads 170 may be configured to hold the at least one battery 162 above a metal surface of the battery housing 164. In aspects, the thermal isolation pads 170 may be configured and able to withstand high temperature while being thin and having very low heat conductivity. In aspects, the thermal isolation pads 170 may be configured and able to withstand the high temperature environment 906 during a temperature sensing time period.

[0122] Further, the battery housing 164 may be configured to be spaced as far as possible above the upper substrate surface 118 to reduce heat transfer. A major component of the heat transfer in that space is convection when the wafer-like sensor 100 is operated at atmospheric pressure. To break up the convection in that space, insulating surfaces such as the thermal isolation pads 170, a plate, an insulating plate, a structure, an insulating structure, and / or the like can be placed between the support substrate 116 and the battery housing 164 to further thermally insulate the battery housing 164.

[0123] The aspects of the wafer-like sensor 100 illustrated in Figure 15 and described therewith, may optionally be implemented in any other aspects of the waferlike sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the wafer-like sensor 100 illustrated in Figure 15.

[0124] Figure 16 illustrates a partial cross-sectional view of a wafer-like sensor according to aspects of the disclosure.

[0125] In particular, Figure 16 illustrates the temperature circuit component 104 arranged on the upper substrate surface 118 of the support substrate 116. In aspects,PATENTDocket No.: 131825.02150224-044-PRO / US the temperature circuit component 104 may include sensor circuits 172, a circuit housing 174, and / or the like.

[0126] The sensor circuits 172 may be arranged within the circuit housing 174 and the sensor circuits 172 may provide control, communication, processing, and / or the like of the wafer-like sensor 100 through the contact connectors 154, the contact pads 156, the at least one data interconnect 112, the at least one sensor interconnect 114, and / or the like.

[0127] In aspects, the sensor circuits 172 may include a controller for controlling operation of the wafer-like sensor 100. In aspects, the controller may be implemented as a microcontroller, an application-specific integrated circuit (ASIC), a field- programmable gate array (FPGA), and / or the like. In aspects, the sensor circuits 172 may include an analog to digital converter for converting analog signals to digital signals, such as signals from the at least one temperature sensor 102. In aspects, the sensor circuits 172 may include a memory for storing sensor readings from the at least one temperature sensor 102, instructions for operating the controller, mission instructions for the wafer-like sensor 100, and / or the like.

[0128] In aspects, the sensor circuits 172 may be configured to withstand 125° C or more. In aspects, the sensor circuits 172 may be configured to withstand the high temperature environment 906 during a temperature sensing time period.

[0129] Further, the circuit housing 174 may be configured as a vacuum enclosure to provide additional insulation from the high temperature environment 906. In aspects, the circuit housing 174 may include a vacuum connection 176 arranged on the circuit housing 174 to allow for air to be evacuated from the circuit housing 174. Accordingly, the electronics of the temperature circuit component 104 including the sensor circuits 172 and / or the like may be thermally isolated by making the circuit housing 174 vacuum tight and by pulling a vacuum on the circuit housing 174 utilizing, for example, the vacuum connection 176, to reduce conduction and convection from the walls of the circuit housing 174 to components of the temperature circuit component 104.

[0130] Additionally, the temperature circuit component 104 may implement getters 178. In aspects, the getters 178 may utilize a reactive material arranged in thePATENTDocket No.: 131825.02150224-044-PRO / US circuit housing 174 to complete and maintain the vacuum therein. In aspects, the getters 178 may be configured to remove small amounts of gas from the evacuated space of the circuit housing 174. In aspects, the getters 178 may be implemented as one or more of a flashed getter, a coating getter, a bulk getter, a getter pump or sorption pump, an ion getter pump, and / or the like. In aspects, the getters 178 may be powered and receive power through the at least one power interconnect 110 and / or the mounting structure 132. In this regard, the mounting structure 132 may be configured to deliver power to the getters 178 for powering the same. In aspects, the getters 178 may be configured and / or implemented to be activated by application of power. The application of power may heat them up and cause a reaction in the constituents thereof. In aspects, the activation of the getters 178 may happen after they have been sealed in a vacuum environment. Thereafter, the power may be removed and the getters 178 may operate through the rest of its life passively.

[0131] Further, the temperature circuit component 104 may include thermal isolation pads 180. In aspects, the thermal isolation pads 180 may be arranged between the sensor circuits 172 and the circuit housing 174. In aspects, the thermal isolation pads 180 may be implemented as thin mica pads. In aspects, the thermal isolation pads 180 may be configured to hold the sensor circuits 172 above a metal surface of the circuit housing 174. In aspects, the thermal isolation pads 180 may be configured and able to withstand high temperature while being thin and having very low heat conductivity. In aspects, the thermal isolation pads 180 may be configured and able to withstand the high temperature environment 906 during a temperature sensing time period.

[0132] Further, the circuit housing 174 may be configured to be spaced as far as possible above the upper substrate surface 118 to reduce heat transfer. A major component of the heat transfer in that space is convection when the wafer-like sensor 100 is operated at atmospheric pressure. To break up the convection in that space, insulating surfaces such as the thermal isolation pads 180, a plate, an insulating plate, a structure, an insulating structure, and / or the like can be placed between the supportPATENTDocket No.: 131825.02150224-044-PRO / US substrate 116 and the circuit housing 174 to further thermally insulate the circuit housing 174.

[0133] The wafer-like sensor 100 may operate in the high temperature environment 906 during a temperature sensing time period. In this regard, the temperature limitation of the electronics of the wafer-like sensor 100 ultimately determines how long the wafer-like sensor 100 can stay at high temperature before it must be withdrawn to a cooler environment. But the wafer-like sensor 100 may not reach a stable temperature equilibrium in the device having the high temperature environment 906, such as on a hot pedestal within a processing station, in this limited time. In other words, the at least one temperature sensor 102 may not remain within the high temperature environment 906 long enough to obtain an exact measurement of temperature of the high temperature environment 906.

[0134] Therefore, aspects of the wafer-like sensor 100 may be configured to characterize the thermal time constants and dynamic performance of the wafer-like sensor 100 and / or the at least one temperature sensor 102 so that by observing the temperature rate of rise on the various sensors including the at least one temperature sensor 102, the ultimate temperature profile can be deduced without needing to keep the wafer-like sensor 100 in the high temperature environment 906, such as on the heated pedestal for long periods of time. In aspects, the wafer-like sensor 100 may be configured to sense a temperature rate of rise with the at least one temperature sensor 102 and based on thermal time constants and dynamic performance of the wafer-like sensor 100 calculate a temperature profile of the high temperature environment 906 during a temperature sensing time period.

[0135] In aspects, the temperature circuit component 104 of the wafer-like sensor 100 may be configured to calculate the ultimate temperature profile based on readings from the at least one temperature sensor 102, and software and data stored in the memory of the temperature circuit component 104. In aspects, the separate component 904 may be configured to calculate the ultimate temperature profile based on readings received from the at least one temperature sensor 102 and / or the temperature circuitPATENTDocket No.: 131825.02150224-044-PRO / US component 104 and software and data stored in the memory of the separate component 904.

[0136] With reference to Figure 15 and Figure 16, the electronics in the wafer-like sensor 100, such as the electrical interface 106 and / or the battery component 108, cannot typically operate above 125-150 degrees C. But the wafer-like sensor 100 may be configured to be able to go to higher temperatures including temperatures of the high temperature environment 906. Therefore, the electronics of the wafer-like sensor 100 may be isolated as much as possible from the support substrate 116 itself, which can reach up to or greater than 400 degrees C for several minutes. To insulate the electronics of the wafer-like sensor 100 from the support substrate 116, careful consideration is given to reducing the heat transfer by conduction, convection and radiation from the enclosure walls to the electronics within the wafer-like sensor 100, such as PCBs (Printed Circuit Boards) inside. To further insulate the electronics of the temperature circuit component 104 and / or the battery component 108 from high temperature, components such as the PCBs inside the electronics enclosures may be isolated by making the enclosures vacuum tight and by pulling a vacuum on the enclosures to reduce conduction and convection from the enclosure walls to the PCBs.

[0137] With further reference to Figure 15 and Figure 16, the electronic components inside the electronics enclosure of the wafer-like sensor 100 typically contain plastics and other non-refractory materials. Because the electronics enclosure will get to a 125-150 degree C range or higher, these components will outgas water vapor and other volatile hydrocarbons. The vapor pressure of these outgas components will increase with temperature and could partially defeat the vacuum insulation. In addition, there is only a limited ability to decrease this outgassing by baking out the enclosures before sealing them. Accordingly, the wafer-like sensor 100 may be configured to include getters inside the electronics enclosures that will soak up many of these outgas components. In aspects, the wafer-like sensor 100 may activate these getters by passing a current through resistors inside the getters to heat them. In aspects, the wafer-like sensor 100 may be configured to integrate these electrical leadsPATENTDocket No.: 131825.02150224-044-PRO / US into the wire “standoffs” that elevate the electronics enclosure above the wafer, such as the mounting component 136 illustrated in Figure 9.

[0138] The aspects of the wafer-like sensor 100 illustrated in Figure 16 and described therewith, may optionally be implemented in any other aspects of the waferlike sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the wafer-like sensor 100 illustrated in Figure 16.

[0139] Figure 17 illustrates an exemplary process of implementing a wafer-like sensor according to aspects of the disclosure.

[0140] In particular, Figure 17 shows an exemplary process of implementing a wafer-like sensor 300 of the disclosure. In particular, it should be noted that the process of implementing a wafer-like sensor 300 is merely exemplary and may be modified consistent with the various aspects disclosed herein. Moreover, the process of implementing a wafer-like sensor 300 of the disclosure may include a process of manufacturing the wafer-like sensor 100. It should be noted that the process of implementing a wafer-like sensor 300 may be performed in a different order consistent with the aspects described above. Moreover, the process of implementing a wafer-like sensor 300 may be modified to have more or fewer process steps consistent with the various aspects disclosed herein.

[0141] The process of implementing a wafer-like sensor 300 of the disclosure may include providing a support substrate 302. In this regard, the providing a support substrate 302 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the providing a support substrate 302 consistent with the disclosure.

[0142] In aspects, the providing a support substrate 302 may include providing the support substrate 116 as disclosed herein. In aspects, the support substrate 116 may have a circular shape, a square shape, a rectangular shape, a semiconductor wafer shape, and / or the like. As illustrated in Figure 1 , the support substrate 116 isPATENTDocket No.: 131825.02150224-044-PRO / US shown with a circular shape and / or a semiconductor wafer shape. In aspects, the support substrate 116 may have standard semiconductor wafer dimensions. In aspects, the support substrate 116 may have dimensions of 100 mm - 600 mm in diameter for circular implementations of the support substrate 116. In aspects, the support substrate 116 may have side dimensions of 100 mm - 600 mm for rectangular or square implementations of the support substrate 116.

[0143] In aspects, the support substrate 116 may be formed from silicon, silicon carbide, Sapphire, glass, another semiconductor wafer material, combinations thereof, and / or the like. In aspects, the support substrate 116 may be formed from silicon, intrinsic silicon, chemically pure silicon, and / or the like. In aspects, the support substrate 116 may include an upper substrate surface 118, at least one substrate side surface 120, and a bottom substrate surface 122 as illustrated in Figure 2. In aspects, the support substrate 116 may be configured and implemented to operate in harsh environments including the high temperature environment 906 during a temperature sensing time period.

[0144] The process of implementing a wafer-like sensor 300 of the disclosure may include arranging at least one power interconnect, at least one data interconnect, at least one sensor interconnect on the support substrate 304. In this regard, the arranging at least one power interconnect, at least one data interconnect, at least one sensor interconnect on the support substrate 304 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the arranging at least one power interconnect, at least one data interconnect, at least one sensor interconnect on the support substrate 304 consistent with the disclosure.

[0145] In aspects, the arranging at least one power interconnect, at least one data interconnect, at least one sensor interconnect on the support substrate 304 may include arranging the at least one power interconnect 110, the at least one data interconnect 112, the at least one sensor interconnect 114 on the support substrate 116 as disclosed herein. In aspects, the at least one power interconnect 110, the at leastPATENTDocket No.: 131825.02150224-044-PRO / US one data interconnect 112, the at least one sensor interconnect 114, and / or the like of the wafer-like sensor 100 may be arranged on the upper substrate surface 118. In aspects, the at least one power interconnect 110, the at least one data interconnect 112, the at least one sensor interconnect 114, and / or the like may be arranged on the upper substrate surface 118 with intervening layers therebetween, and / or arranged directly on the upper substrate surface 118. In particular, aspects of the wafer-like sensor 100 may be configured such that the support substrate 116 includes no vias, apertures, through holes, and / or the like to limit heat transfer from the bottom substrate surface 122 and the high temperature environment 906.

[0146] The process of implementing a wafer-like sensor 300 of the disclosure may include attaching the at least one temperature sensor to the support substrate with a high temperature adhesive 306. In this regard, the attaching the at least one temperature sensor to the support substrate with a high temperature adhesive 306 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the attaching the at least one temperature sensor to the support substrate with a high temperature adhesive 306 consistent with the disclosure.

[0147] In aspects, the attaching the at least one temperature sensor to the support substrate with a high temperature adhesive 306 may include attaching the at least one temperature sensor 102 to the support substrate 116 with the high temperature adhesive 128 as disclosed herein. In aspects, the at least one temperature sensor 102 may be arranged on the upper substrate surface 118 and / or within the upper substrate surface 118; and the at least one temperature sensor 102 may be attached to the upper substrate surface 118 with a high temperature adhesive 128. In particular, a bottom surface of the at least one temperature sensor 102 and a surface of the support substrate 116 may include the high temperature adhesive 128 therebetween.

[0148] The process of implementing a wafer-like sensor 300 of the disclosure may include attaching the at least one temperature sensor to the at least one sensorPATENTDocket No.: 131825.02150224-044-PRO / US interconnect with a conductive adhesive 308. In this regard, the attaching the at least one temperature sensor to the at least one sensor interconnect with a conductive adhesive 308 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the attaching the at least one temperature sensor to the at least one sensor interconnect with a conductive adhesive 308 consistent with the disclosure.

[0149] In aspects, the attaching the at least one temperature sensor to the at least one sensor interconnect with a conductive adhesive 308 may include attaching the at least one temperature sensor 102 the at least one sensor interconnect 114 with the conductive adhesive 124 as disclosed herein. In aspects, a first portion of the conductive adhesive 124 may be arranged on a first implementation of the at least one sensor interconnect 114 and a first implementation of the signal pads 126; and a second portion of the conductive adhesive 124 may be arranged on a second implementation of the at least one sensor interconnect 114 and a second implementation of the signal pads 126. Thus, the at least one temperature sensor 102 may generate temperature signals and provide the temperature signals through one of the signal pads 126, the conductive adhesive 124, and the at least one sensor interconnect 114. Additionally, the conductive adhesive 124 may further contact the upper substrate surface 118 to provide additional adhesion. In aspects, the at least one sensor interconnect 114 may extend along the lateral axis 901 , the longitudinal axis 902, or both the lateral axis 901 and the longitudinal axis 902.

[0150] The process of implementing a wafer-like sensor 300 of the disclosure may include forming contact connectors and / or contact pads on a temperature circuit component, a battery component, and / or the support substrate 310. In this regard, the forming contact connectors and / or contact pads on a temperature circuit component, a battery component, and / or the support substrate 310 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the forming contact connectors and / or contact pads on a temperaturePATENTDocket No.: 131825.02150224-044-PRO / US circuit component, a battery component, and / or the support substrate 310 consistent with the disclosure.

[0151] In aspects, the forming contact connectors and / or contact pads on a temperature circuit component, a battery component, and / or the support substrate 310 may include forming contact connectors 154 and / or contact pads 156 on a temperature circuit component 104, a battery component 108, and / or the support substrate 116 as disclosed herein. In aspects, the contact connectors 154 and / or the contact pads 156 may be arranged on the upper substrate surface 118, the at least one power interconnect 110, the at least one data interconnect 112, or the at least one sensor interconnect 114 along a lateral axis 901 , a longitudinal axis 902, and / or both. In aspects, the contact connectors 154 and / or the contact pads 156 may extend along the bottom surface of the temperature circuit component 104 and / or the battery component 108 along a lateral axis 901 , a longitudinal axis 902, and / or both. In aspects, the contact connectors 154 may be pins, bumps, pillars, mechanical connectors, extensions, and / or the like.

[0152] The process of implementing a wafer-like sensor 300 of the disclosure may include arranging the temperature circuit component, the battery component, and an electrical interface on the support substrate 312. In this regard, the arranging the temperature circuit component, the battery component, and an electrical interface on the support substrate 312 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the arranging the temperature circuit component, the battery component, and an electrical interface on the support substrate 312 consistent with the disclosure.

[0153] In aspects, the arranging the temperature circuit component, the battery component, and an electrical interface on the support substrate 312 may include arranging the temperature circuit component 104, the battery component 108, and an electrical interface 106 on the support substrate 116 as disclosed herein. In aspects, the temperature circuit component 104 and the battery component 108 may be arranged on and / or attached to the support substrate 116 with the mounting structure 132.PATENTDocket No.: 131825.02150224-044-PRO / US

[0154] In particular, the mounting structure 132 may be configured to allow for thermal expansion of the temperature circuit component 104 and / or the battery component 108. In aspects, there may be an implementation of the mounting structure 132 on at least two sides the temperature circuit component 104. In aspects, the mounting structure 132 may position the temperature circuit component 104 and / or the battery component 108 above the support substrate 116 and / or the upper substrate surface 118 along a vertical axis 903 to limit heat transfer from the bottom substrate surface 122 and the high temperature environment 906.

[0155] The aspects of the process of implementing a wafer-like sensor 300 illustrated in Figure 17 and described therewith, may optionally be implemented in any other aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of the process of implementing a wafer-like sensor 300 illustrated in Figure 17.

[0156] Figure 18 illustrates another exemplary process of implementing a waferlike sensor according to aspects of the disclosure.

[0157] In particular, Figure 18 shows another exemplary process of implementing a wafer-like sensor 301 of the disclosure. In particular, it should be noted that the process of implementing a wafer-like sensor 301 is merely exemplary and may be modified consistent with the various aspects disclosed herein. Moreover, the process of implementing a wafer-like sensor 301 of the disclosure may include a process of manufacturing the wafer-like sensor 100. It should be noted that the process of implementing a wafer-like sensor 301 may be performed in a different order consistent with the aspects described above. Moreover, the process of implementing a wafer-like sensor 301 may be modified to have more or fewer process steps consistent with the various aspects disclosed herein.

[0158] The process of implementing a wafer-like sensor 301 of the disclosure may include placing the wafer-like sensor within a high temperature environment 314. In this regard, the placing the wafer-like sensor within a high temperature environment 314 may include any one or more materials, structures, arrangements, processes, and / orPATENTDocket No.: 131825.02150224-044-PRO / US the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the placing the wafer-like sensor within a high temperature environment 314 consistent with the disclosure. In aspects, the placing the wafer-like sensor within a high temperature environment 314 may include placing the wafer-like sensor 100 within the high temperature environment 906 as disclosed herein.

[0159] The process of implementing a wafer-like sensor 301 of the disclosure may include obtaining temperature readings from the at least one temperature sensor 316. In this regard, the obtaining temperature readings from the at least one temperature sensor 316 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the obtaining temperature readings from the at least one temperature sensor 316 consistent with the disclosure.

[0160] In aspects, the obtaining temperature readings from the at least one temperature sensor 316 may include obtaining temperature readings from the at least one temperature sensor 102 as disclosed herein. In aspects, the at least one temperature sensor 102 may provide and / or output temperature readings to the at least one sensor interconnect 114, which may deliver the temperature readings from the at least one temperature sensor 102 to the temperature circuit component 104. Additionally, components of the wafer-like sensor 100 may be powered by the battery component 108. In aspects, these processes may take place within the high temperature environment 906.

[0161] The process of implementing a wafer-like sensor 301 of the disclosure may include removing the wafer-like sensor from the high temperature environment 318. In this regard, the removing the wafer-like sensor from the high temperature environment 318 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the removing the wafer-like sensor from the high temperature environment 318 consistent with thePATENTDocket No.: 131825.02150224-044-PRO / US disclosure. In aspects, the removing the wafer-like sensor from the high temperature environment 318 may include removing the wafer-like sensor 100 from the high temperature environment 906 as disclosed herein.

[0162] The process of implementing a wafer-like sensor 301 of the disclosure may include providing the temperature readings to a separate component with the electrical interface 320. In this regard, the providing the temperature readings to a separate component with the electrical interface 320 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the providing the temperature readings to a separate component with the electrical interface 320 consistent with the disclosure.

[0163] In aspects, the providing the temperature readings to a separate component with the electrical interface 320 may include providing the temperature readings to a separate component 904 with the electrical interface 106 as disclosed herein. In particular, the temperature circuit component 104 may process and / or provide the temperature readings to the electrical interface 106. In aspects, once the wafer-like sensor 100 has been removed from the high temperature environment 906, the electrical interface 106 may connect to and provide the temperature readings to a separate component 904 as illustrated in Figure 3. In aspects, the separate component 904 may be located outside of the high temperature environment 906.

[0164] The process of implementing a wafer-like sensor 301 of the disclosure may include generating a temperature profile based on thermal time constants and dynamic performance of the wafer-like sensor and observing a temperature rate of rise of the at least one temperature sensor 322. In this regard, the generating a temperature profile based on thermal time constants and dynamic performance of the wafer-like sensor and observing a temperature rate of rise of the at least one temperature sensor 322 may include any one or more materials, structures, arrangements, processes, and / or the like as described herein. Moreover, one or more proceeding or subsequent processes may also be implemented with respect to the generating a temperature profile based on thermal time constants and dynamic performance of the wafer-likePATENTDocket No.: 131825.02150224-044-PRO / US sensor and observing a temperature rate of rise of the at least one temperature sensor 322 consistent with the disclosure. In other aspects, the process of implementing a wafer-like sensor 301 may not implement a "dynamic" temperature prediction scheme as contemplated by step 322. In this aspect, the wafer-like sensor 100 may be implemented in the high temperature environment 906 and allowed to come to equilibrium, assuming the time constants are short, and then the wafer-like sensor 100 may read the individual temperatures. Accordingly, the process of implementing a wafer-like sensor 301 may implement dynamic and steady state temperature readings.

[0165] In aspects, the generating a temperature profile based on thermal time constants and dynamic performance of the wafer-like sensor and observing a temperature rate of rise of the at least one temperature sensor 322 may include generating a temperature profile based on thermal time constants and dynamic performance of the wafer-like sensor 100 and observing a temperature rate of rise of the at least one temperature sensor 102 as disclosed herein. In particular, the wafer-like sensor 100 may be configured to characterize the thermal time constants and dynamic performance of the wafer-like sensor 100 and / or the at least one temperature sensor 102 so that by observing the temperature rate of rise on the various sensors including the at least one temperature sensor 102, the ultimate temperature profile can be deduced without needing to keep the wafer-like sensor 100 in the high temperature environment 906, such as on the heated pedestal for long periods of time.

[0166] In aspects, the temperature circuit component 104 of the wafer-like sensor 100 may be configured to calculate the ultimate temperature profile based on readings from the at least one temperature sensor 102, and software and data stored in the memory of the temperature circuit component 104. In aspects, the separate component 904 may be configured to calculate the ultimate temperature profile based on readings received from the at least one temperature sensor 102 and / or the temperature circuit component 104 and software and data stored in the memory of the separate component 904.

[0167] The aspects of the process of implementing a wafer-like sensor 301 illustrated in Figure 18 and described therewith, may optionally be implemented in anyPATENTDocket No.: 131825.02150224-044-PRO / US other aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith. Further, the aspects of the wafer-like sensor 100 illustrated in the other figures and described therewith may optionally be implemented in the aspects of process of implementing a wafer-like sensor 301 illustrated in Figure 18.

[0168] In aspects, the wafer-like sensor 100 may be configured and implemented to operate in a high temperature environment 906 during a temperature sensing time period. In aspects, the at least one temperature sensor 102 may be configured to obtain a temperature within the high temperature environment 906. In aspects, the high temperature environment 906 comprises an environment having temperatures in excess of 150° C. In aspects, the temperature sensing time period is less than 7 minutes.

[0169] In aspects, the at least one temperature sensor 102 may be configured to provide and / or output temperature readings to the at least one sensor interconnect 114; and the at least one sensor interconnect 114 may be configured to deliver the temperature readings to the temperature circuit component 104. In aspects, once the wafer-like sensor 100 has been removed from the high temperature environment 906, the electrical interface 106 may be configured to connect to and provide temperature readings to a separate component 904.

[0170] In aspects, the at least one temperature sensor 102, the at least one power interconnect 110, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 may be arranged on an upper substrate surface 118. In aspects, the support substrate 116 may be configured with no vias, no apertures, and / or no through holes to limit heat transfer from a bottom substrate surface 122 while in the high temperature environment 906.

[0171] In aspects, the at least one data interconnect 112, and / or the at least one sensor interconnect 114 may be configured and may be arranged to extend on an upper substrate surface 118 and connect to the at least one temperature sensor 102, the temperature circuit component 104, the electrical interface 106, and / or the battery component 108.

[0172] In aspects, the at least one temperature sensor 102 is attached to the at least one sensor interconnect 114 with a conductive adhesive 124. In aspects, thePATENTDocket No.: 131825.02150224-044-PRO / US conductive adhesive 124 may be configured to withstand the high temperature environment 906. In aspects, the at least one temperature sensor 102 may be arranged on an upper substrate surface 118 and / or within the upper substrate surface 118; and wherein the at least one temperature sensor 102 is attached to the upper substrate surface 118 with a high temperature adhesive 128. In aspects, a system includes the wafer-like sensor 100 and the separate component 904 configured to be operated outside of the high temperature environment 906.

[0173] One EXAMPLE: a wafer-like sensor includes at least one temperature sensor configured to obtain a temperature within the high temperature environment. The wafer-like sensor in addition includes a support substrate. The wafer-like sensor moreover includes a temperature circuit component arranged on the support substrate. The wafer-like sensor also includes an electrical interface arranged on the support substrate. The wafer-like sensor further includes at least one power interconnect arranged on the support substrate. The wafer-like sensor in addition includes at least one data interconnect arranged on the support substrate. The wafer-like sensor moreover includes at least one sensor interconnect arranged on the support substrate.

[0174] The above-noted EXAMPLE may further include any one or a combination of more than one of the following EXAMPLES: The wafer-like sensor of the above-noted EXAMPLE where the high temperature environment comprises an environment having temperatures in excess of 150 C. The wafer-like sensor of the above-noted EXAMPLE where the temperature sensing time period is less than 7 minutes. The wafer-like sensor of the above-noted EXAMPLE where the at least one temperature sensor is configured to provide and / or output temperature readings to the at least one sensor interconnect; and where the at least one sensor interconnect is configured to deliver the temperature readings to the temperature circuit component. The wafer-like sensor of the above-noted EXAMPLE includes a battery component arranged on the support substrate, where the wafer-like sensor is powered by the battery component within the high temperature environment. The wafer-like sensor of the above-noted EXAMPLE includes a battery component arranged on the support substrate, where the at least one temperature sensor and the temperature circuit component are powered by the batteryPATENTDocket No.: 131825.02150224-044-PRO / US component via the at least one power interconnect. The wafer-like sensor of the abovenoted EXAMPLE where the temperature circuit component is configured to process and / or provide temperature readings to the electrical interface. The wafer-like sensor of the above-noted EXAMPLE where once the wafer-like sensor has been removed from the high temperature environment, the electrical interface is configured to connect to and provide temperature readings to a separate component. The wafer-like sensor of the above-noted EXAMPLE where the at least one temperature sensor is implemented as a resistance temperature detector (RTD). The wafer-like sensor of the above-noted EXAMPLE where the at least one temperature sensor comprises a plurality of the at least one temperature sensor arranged in various locations on the support substrate. The wafer-like sensor of the above-noted EXAMPLE where the at least one temperature sensor, the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect are arranged on an upper substrate surface. The wafer-like sensor of the above-noted EXAMPLE where the support substrate is configured with no vias, no apertures, and / or no through holes to limit heat transfer from a bottom substrate surface while in the high temperature environment. The wafer-like sensor of the above-noted EXAMPLE includes a battery component arranged on the support substrate, where the at least one data interconnect, and / or the at least one sensor interconnect are configured and arranged to extend on an upper substrate surface and connect to the at least one temperature sensor, the temperature circuit component, the electrical interface, and / or the battery component. The wafer-like sensor of the above-noted EXAMPLE where there are multiple implementations of the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect. The wafer-like sensor of the above-noted EXAMPLE where the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect comprise metallic traces arranged on an upper substrate surface. The wafer-like sensor of the above-noted EXAMPLE where the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect comprise silver traces arranged on an upper substrate surface. The waferlike sensor of the above-noted EXAMPLE where the at least one power interconnect,PATENTDocket No.: 131825.02150224-044-PRO / US the at least one data interconnect, and / or the at least one sensor interconnect are implemented with no crossovers and / or no vias. The wafer-like sensor of the abovenoted EXAMPLE where the wafer-like sensor comprises at least one alignment feature configured to align the wafer-like sensor with respect to a separate component and / or at least one corresponding alignment feature of a separate component. The wafer-like sensor of the above-noted EXAMPLE where the at least one alignment feature is configured to ensure that the wafer-like sensor and / or the electrical interface are oriented and / or positioned with respect to the separate component. The wafer-like sensor of the above-noted EXAMPLE where the at least one temperature sensor is attached to the at least one sensor interconnect with a conductive adhesive. The waferlike sensor of the above-noted EXAMPLE where the conductive adhesive is configured to withstand the high temperature environment. The wafer-like sensor of the abovenoted EXAMPLE where the at least one sensor interconnect is configured to extend along an upper substrate surface to a point adjacent the at least one temperature sensor. The wafer-like sensor of the above-noted EXAMPLE where the at least one temperature sensor comprises signal pads arranged on a surface of the at least one temperature sensor. The wafer-like sensor of the above-noted EXAMPLE where the at least one temperature sensor comprises two implementations of the signal pads; and where one of the signal pads is configured to receive power, current, and / or voltage and another one of the signal pads is configured to output a temperature signal. The waferlike sensor of the above-noted EXAMPLE where a first portion of the conductive adhesive is arranged on a first implementation of the at least one sensor interconnect and a first implementation of the signal pads; and where a second portion of the conductive adhesive is arranged on a second implementation of the at least one sensor interconnect and a second implementation of the signal pads. The wafer-like sensor of the above-noted EXAMPLE where the at least one temperature sensor is arranged on an upper substrate surface and / or within the upper substrate surface; and where the at least one temperature sensor is attached to the upper substrate surface with a high temperature adhesive. The wafer-like sensor of the above-noted EXAMPLE where a bottom surface of the at least one temperature sensor and a surface of the supportPATENTDocket No.: 131825.02150224-044-PRO / US substrate comprise the high temperature adhesive therebetween. The wafer-like sensor of the above-noted EXAMPLE where the support substrate comprises a substrate recess configured to extend through the upper substrate surface; and where a bottom surface of the at least one temperature sensor and a bottom surface of the substrate recess comprises the high temperature adhesive therebetween. The wafer-like sensor of the above-noted EXAMPLE where an area of the substrate recess adjacent the at least one temperature sensor comprises a roughened surface area to increase adhesion of the high temperature adhesive. The wafer-like sensor of the above-noted EXAMPLE includes: a battery component arranged on the support substrate; and a mounting structure configured to mount the temperature circuit component and / or the battery component to the support substrate and / or an upper substrate surface. The wafer-like sensor of the above-noted EXAMPLE where the mounting structure is configured to allow for thermal expansion of the temperature circuit component and / or the battery component. The wafer-like sensor of the above-noted EXAMPLE where an implementation of the mounting structure is arranged on at least two sides the temperature circuit component and / or the battery component. The wafer-like sensor of the above-noted EXAMPLE where the mounting structure is configured to support the temperature circuit component and / or the battery component above the support substrate and / or the upper substrate surface. The wafer-like sensor of the above-noted EXAMPLE where the mounting structure comprises at least one anchor structure configured to be attached on or within the support substrate and / or the upper substrate surface. The wafer-like sensor of the above-noted EXAMPLE where the at least one anchor structure is configured to be attached on or within the support substrate and / or the upper substrate surface with a high temperature adhesive. The wafer-like sensor of the above-noted EXAMPLE where the mounting structure comprises a mounting component attached to the temperature circuit component and / or the battery component; and where the mounting component is attached to the at least one anchor structure. The wafer-like sensor of the above-noted EXAMPLE where the mounting component and / or the at least one anchor structure are configured to allow for movement therebetween to allow for thermal expansion of the temperature circuitPATENTDocket No.: 131825.02150224-044-PRO / US component, the battery component, and / or other components of the wafer-like sensor. The wafer-like sensor of the above-noted EXAMPLE where the mounting structure comprises a holder configured to hold the mounting component to the at least one anchor structure. The wafer-like sensor of the above-noted EXAMPLE where the at least one anchor structure comprises a retaining slot configured to receive the mounting component; and where the retaining slot is configured to allow for movement of the mounting component with respect to the at least one anchor structure. The wafer-like sensor of the above-noted EXAMPLE where the mounting component is implemented as a rod extending from a side of the temperature circuit component and / or the battery component. The wafer-like sensor of the above-noted EXAMPLE includes a cover configured to cover an end of the temperature circuit component and / or the battery component. The wafer-like sensor of the above-noted EXAMPLE where the support substrate and / or the upper substrate surface comprises substrate recesses; where the at least one anchor structure comprises extensions at corresponding locations to the substrate recesses; and where the extensions are configured to be inserted into the substrate recesses to hold the at least one anchor structure on the support substrate. The wafer-like sensor of the above-noted EXAMPLE where a high temperature adhesive is located between the substrate recesses and the extensions. The wafer-like sensor of the above-noted EXAMPLE includes a battery component arranged on the support substrate, where the temperature circuit component, the battery component, and / or the wafer-like sensor are configured with contact connectors and / or contact pads; and where the contact connectors and / or the contact pads are configured to allow the temperature circuit component and / or the battery component to be electrically connected to and disconnected from to the wafer-like sensor. The wafer-like sensor of the above-noted EXAMPLE where the electrical interface comprises a plurality of electrical connections configured to connect to corresponding implementations of at least one electrical connection arranged on a separate component. The wafer-like sensor of the above-noted EXAMPLE includes a battery component arranged on the support substrate, where the plurality of electrical connections are configured to transfer power to the battery component and / or the temperature circuit component from thePATENTDocket No.: 131825.02150224-044-PRO / US separate component. The wafer-like sensor of the above-noted EXAMPLE where the plurality of electrical connections are configured to transfer data, instructions, and / or updates between the temperature circuit component and the separate component. The wafer-like sensor of the above-noted EXAMPLE the plurality of electrical connections to transfer data, instructions, and / or updates between the temperature circuit component and the separate component. The wafer-like sensor of the above-noted EXAMPLE where the plurality of electrical connections are arranged on the support substrate and / or an upper substrate surface. The wafer-like sensor of the above-noted EXAMPLE where the plurality of electrical connections are connected to one or more of the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect. The wafer-like sensor of the above-noted EXAMPLE where the plurality of electrical connections are arranged on an upper substrate surface in a symmetrical pattern. The wafer-like sensor of the above-noted EXAMPLE where the plurality of electrical connections are arranged on an upper substrate surface in an asymmetrical pattern. The wafer-like sensor of the above-noted EXAMPLE includes a battery component arranged on the support substrate, where the battery component comprises at least one battery and a battery housing; and where the at least one battery is arranged within the battery housing. The wafer-like sensor of the above-noted EXAMPLE where the at least one battery is implemented as a solid-state battery, a quasi-solid-state battery, and / or a supercapacitor. The wafer-like sensor of the abovenoted EXAMPLE where the at least one battery is configured to withstand the high temperature environment for the temperature sensing time period. The wafer-like sensor of the above-noted EXAMPLE where the battery housing is configured as a vacuum enclosure to provide additional insulation from the high temperature environment. The wafer-like sensor of the above-noted EXAMPLE where the battery housing comprises a vacuum connection arranged on the battery housing that is configured to allow gas to be evacuated from the battery housing. The wafer-like sensor of the above-noted EXAMPLE where the battery component comprises getters configured to remove gas from the battery housing. The wafer-like sensor of the abovenoted EXAMPLE where the battery component comprises thermal isolation padsPATENTDocket No.: 131825.02150224-044-PRO / US arranged between the at least one battery and the battery housing. The wafer-like sensor of the above-noted EXAMPLE where the temperature circuit component comprises sensor circuits and a circuit housing, and where the sensor circuits are arranged within the circuit housing. The wafer-like sensor of the above-noted EXAMPLE where the circuit housing is configured as a vacuum enclosure to provide additional insulation from the high temperature environment. The wafer-like sensor of the abovenoted EXAMPLE where the circuit housing comprises a vacuum connection arranged on the circuit housing configured to allow gas to be evacuated from the circuit housing. The wafer-like sensor of the above-noted EXAMPLE where the temperature circuit component comprises getters configured to remove gas from an evacuated space of the circuit housing. The wafer-like sensor of the above-noted EXAMPLE where the temperature circuit component comprises thermal isolation pads arranged between the sensor circuits and the circuit housing. The wafer-like sensor of the above-noted EXAMPLE where the support substrate comprises a circular shape, a square shape, a rectangular shape, and / or a semiconductor wafer shape. The wafer-like sensor of the above-noted EXAMPLE where the support substrate is formed from silicon. The waferlike sensor of the above-noted EXAMPLE where the wafer-like sensor is configured to sense a temperature rate of rise with the at least one temperature sensor and, based on thermal time constants and dynamic performance of the wafer-like sensor, calculate a temperature profile of the high temperature environment during the temperature sensing time period. The system of the above-noted EXAMPLE includes a separate component configured to be operated outside of the high temperature environment. The system of the above-noted EXAMPLE where the separate component comprises a substrate support to support the wafer-like sensor. The system of the above-noted EXAMPLE where the separate component is a case that includes the substrate support to support the wafer-like sensor. The system of the above-noted EXAMPLE where the separate component comprises at least one electrical connection configured to connect to the wafer-like sensor and / or the electrical interface. The wafer-like sensor of the abovenoted EXAMPLE where the wafer-like sensor is configured to be utilized in a system having a high temperature environment. The wafer-like sensor of the above-notedPATENTDocket No.: 131825.02150224-044-PRO / USEXAMPLE where the high temperature environment is part of a fabrication system, a fabrication device, a semiconductor fabrication system, a semiconductor fabrication device, a processing station, and / or a semiconductor processing station. The wafer-like sensor of the above-noted EXAMPLE being further configured and implemented to operate in a low temperature environment during a temperature sensing time period, where the at least one temperature sensor is further configured to obtain a temperature within the low temperature environment; and where the low temperature environment comprises temperatures less than negative 50 C.

[0175] One EXAMPLE: a process includes configuring at least one temperature sensor to obtain a temperature within the high temperature environment. The process in addition includes providing a support substrate. The process moreover includes arranging a temperature circuit component on the support substrate. The process also includes arranging an electrical interface on the support substrate. The process further includes arranging at least one power interconnect on the support substrate. The process in addition includes arranging at least one data interconnect on the support substrate. The process moreover includes arranging at least one sensor interconnect on the support substrate.

[0176] The above-noted EXAMPLE may further include any one or a combination of more than one of the following EXAMPLES: The process of the above-noted EXAMPLE where the high temperature environment comprises an environment having temperatures in excess of 150 C. The process of the above-noted EXAMPLE where the temperature sensing time period is less than 7 minutes. The process of the above-noted EXAMPLE where the at least one temperature sensor is configured to provide and / or output temperature readings to the at least one sensor interconnect; and where the at least one sensor interconnect is configured to deliver the temperature readings to the temperature circuit component. The process of the above-noted EXAMPLE includes arranging a battery component on the support substrate, where the process of implementing a wafer-like sensor is powered by the battery component within the high temperature environment. The process of the above-noted EXAMPLE includes arranging a battery component on the support substrate, where the at least onePATENTDocket No.: 131825.02150224-044-PRO / US temperature sensor and the temperature circuit component are powered by the battery component via the at least one power interconnect. The process of the above-noted EXAMPLE where the temperature circuit component is configured to process and / or provide temperature readings to the electrical interface. The process of the above-noted EXAMPLE where once the wafer-like sensor has been removed from the high temperature environment, the electrical interface is configured to connect to and provide temperature readings to a separate component. The process of the above-noted EXAMPLE where the at least one temperature sensor is implemented as a resistance temperature detector (RTD). The process of the above-noted EXAMPLE where the at least one temperature sensor comprises a plurality of the at least one temperature sensor arranged in various locations on the support substrate. The process of the above-noted EXAMPLE where the at least one temperature sensor, the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect are arranged on an upper substrate surface. The process of the abovenoted EXAMPLE where the support substrate is configured with no vias, no apertures, and / or no through holes to limit heat transfer from a bottom substrate surface while in the high temperature environment. The process of the above-noted EXAMPLE includes arranging a battery component on the support substrate, where the at least one data interconnect, and / or the at least one sensor interconnect are configured and arranged to extend on an upper substrate surface and connect to the at least one temperature sensor, the temperature circuit component, the electrical interface, and / or the battery component. The process of the above-noted EXAMPLE where there are multiple implementations of the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect. The process of the abovenoted EXAMPLE where the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect comprise metallic traces arranged on an upper substrate surface. The process of the above-noted EXAMPLE where the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect comprise silver traces arranged on an upper substrate surface. The process of the above-noted EXAMPLE where the at least one powerPATENTDocket No.: 131825.02150224-044-PRO / US interconnect, the at least one data interconnect, and / or the at least one sensor interconnect are implemented with no crossovers and / or no vias. The process of the above-noted EXAMPLE where the wafer-like sensor comprises at least one alignment feature configured to align the wafer-like sensor with respect to a separate component and / or at least one corresponding alignment feature of a separate component. The process of the above-noted EXAMPLE where the at least one alignment feature is configured to ensure that the wafer-like sensor and / or the electrical interface are oriented and / or positioned with respect to the separate component. The process of the above-noted EXAMPLE where the at least one temperature sensor is attached to the at least one sensor interconnect with a conductive adhesive. The process of the abovenoted EXAMPLE where the conductive adhesive is configured to withstand the high temperature environment. The process of the above-noted EXAMPLE where the at least one sensor interconnect is configured to extend along an upper substrate surface to a point adjacent the at least one temperature sensor. The process of the above-noted EXAMPLE where the at least one temperature sensor comprises signal pads arranged on a surface of the at least one temperature sensor. The process of the above-noted EXAMPLE where the at least one temperature sensor comprises two implementations of the signal pads; and where one of the signal pads is configured to receive power, current, and / or voltage and another one of the signal pads is configured to output a temperature signal. The process of the above-noted EXAMPLE where a first portion of the conductive adhesive is arranged on a first implementation of the at least one sensor interconnect and a first implementation of the signal pads; and where a second portion of the conductive adhesive is arranged on a second implementation of the at least one sensor interconnect and a second implementation of the signal pads. The process of the above-noted EXAMPLE where the at least one temperature sensor is arranged on an upper substrate surface and / or within the upper substrate surface; and where the at least one temperature sensor is attached to the upper substrate surface with a high temperature adhesive. The process of the above-noted EXAMPLE where a bottom surface of the at least one temperature sensor and a surface of the support substrate comprise the high temperature adhesive therebetween. The process of the above-notedPATENTDocket No.: 131825.02150224-044-PRO / USEXAMPLE where the support substrate comprises a substrate recess configured to extend through the upper substrate surface; and where a bottom surface of the at least one temperature sensor and a bottom surface of the substrate recess comprises the high temperature adhesive therebetween. The process of the above-noted EXAMPLE where an area of the substrate recess adjacent the at least one temperature sensor comprises a roughened surface area to increase adhesion of the high temperature adhesive. The process of the above-noted EXAMPLE includes: arranging a battery component on the support substrate; and configuring a mounting structure to mount the temperature circuit component and / or the battery component to the support substrate and / or an upper substrate surface. The process of the above-noted EXAMPLE where the mounting structure is configured to allow for thermal expansion of the temperature circuit component and / or the battery component. The process of the above-noted EXAMPLE where an implementation of the mounting structure is arranged on at least two sides the temperature circuit component and / or the battery component. The process of the above-noted EXAMPLE where the mounting structure is configured to support the temperature circuit component and / or the battery component above the support substrate and / or the upper substrate surface. The process of the above-noted EXAMPLE where the mounting structure comprises at least one anchor structure configured to be attached on or within the support substrate and / or the upper substrate surface. The process of the above-noted EXAMPLE where the at least one anchor structure is configured to be attached on or within the support substrate and / or the upper substrate surface with a high temperature adhesive. The process of the abovenoted EXAMPLE where the mounting structure comprises a mounting component attached to the temperature circuit component and / or the battery component; and where the mounting component is attached to the at least one anchor structure. The process of the above-noted EXAMPLE where the mounting component and / or the at least one anchor structure are configured to allow for movement therebetween to allow for thermal expansion of the temperature circuit component, the battery component, and / or other components of the wafer-like sensor. The process of the above-noted EXAMPLE where the mounting structure comprises a holder configured to hold the mountingPATENTDocket No.: 131825.02150224-044-PRO / US component to the at least one anchor structure. The process of the above-noted EXAMPLE where the at least one anchor structure comprises a retaining slot configured to receive the mounting component; and where the retaining slot is configured to allow for movement of the mounting component with respect to the at least one anchor structure. The process of the above-noted EXAMPLE where the mounting component is implemented as a rod extending from a side of the temperature circuit component and / or the battery component. The process of the above-noted EXAMPLE includes configuring a cover to cover an end of the temperature circuit component and / or the battery component. The process of the above-noted EXAMPLE where the support substrate and / or the upper substrate surface comprises substrate recesses; where the at least one anchor structure comprises extensions at corresponding locations to the substrate recesses; and where the extensions are configured to be inserted into the substrate recesses to hold the at least one anchor structure on the support substrate. The process of the above-noted EXAMPLE where a high temperature adhesive is located between the substrate recesses and the extensions. The process of the abovenoted EXAMPLE includes arranging a battery component on the support substrate, where the temperature circuit component, the battery component, and / or the wafer-like sensor are configured with contact connectors and / or contact pads; and where the contact connectors and / or the contact pads are configured to allow the temperature circuit component and / or the battery component to be electrically connected to and disconnected from to the wafer-like sensor. The process of the above-noted EXAMPLE where the electrical interface comprises a plurality of electrical connections configured to connect to corresponding implementations of at least one electrical connection arranged on a separate component. The process of the above-noted EXAMPLE includes arranging a battery component on the support substrate, where the plurality of electrical connections are configured to transfer power to the battery component and / or the temperature circuit component from the separate component. The process of the above-noted EXAMPLE where the plurality of electrical connections are configured to transfer data, instructions, and / or updates between the temperature circuit component and the separate component. The process of the above-noted EXAMPLE the plurality ofPATENTDocket No.: 131825.02150224-044-PRO / US electrical connections to transfer data, instructions, and / or updates between the temperature circuit component and the separate component. The process of the abovenoted EXAMPLE where the plurality of electrical connections are arranged on the support substrate and / or an upper substrate surface. The process of the above-noted EXAMPLE where the plurality of electrical connections are connected to one or more of the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect. The process of the above-noted EXAMPLE where the plurality of electrical connections are arranged on an upper substrate surface in a symmetrical pattern. The process of the above-noted EXAMPLE where the plurality of electrical connections are arranged on an upper substrate surface in an asymmetrical pattern. The process of the above-noted EXAMPLE includes arranging a battery component on the support substrate, where the battery component comprises at least one battery and a battery housing; and where the at least one battery is arranged within the battery housing. The process of the above-noted EXAMPLE where the at least one battery is implemented as a solid-state battery, a quasi-solid-state battery, and / or a supercapacitor. The process of the above-noted EXAMPLE where the at least one battery is configured to withstand the high temperature environment for the temperature sensing time period. The process of the above-noted EXAMPLE where the battery housing is configured as a vacuum enclosure to provide additional insulation from the high temperature environment. The process of the above-noted EXAMPLE where the battery housing comprises a vacuum connection arranged on the battery housing that is configured to allow gas to be evacuated from the battery housing. The process of the above-noted EXAMPLE where the battery component comprises getters configured to remove gas from the battery housing. The process of the above-noted EXAMPLE where the battery component comprises thermal isolation pads arranged between the at least one battery and the battery housing. The process of the above-noted EXAMPLE where the temperature circuit component comprises sensor circuits and a circuit housing, and where the sensor circuits are arranged within the circuit housing. The process of the above-noted EXAMPLE where the circuit housing is configured as a vacuum enclosure to provide additional insulation from the high temperature environment. The process ofPATENTDocket No.: 131825.02150224-044-PRO / US the above-noted EXAMPLE where the circuit housing comprises a vacuum connection arranged on the circuit housing configured to allow gas to be evacuated from the circuit housing. The process of the above-noted EXAMPLE where the temperature circuit component comprises getters configured to remove gas from an evacuated space of the circuit housing. The process of the above-noted EXAMPLE where the temperature circuit component comprises thermal isolation pads arranged between the sensor circuits and the circuit housing. The process of the above-noted EXAMPLE where the support substrate comprises a circular shape, a square shape, a rectangular shape, and / or a semiconductor wafer shape. The process of the above-noted EXAMPLE where the support substrate is formed from silicon. The process of the above-noted EXAMPLE where the wafer-like sensor is configured to sense a temperature rate of rise with the at least one temperature sensor and, based on thermal time constants and dynamic performance of the wafer-like sensor, calculate a temperature profile of the high temperature environment during the temperature sensing time period. The process of the above-noted EXAMPLE where the wafer-like sensor is configured to be utilized in a system having a high temperature environment. The process of the above-noted EXAMPLE where the high temperature environment is part of a fabrication system, a fabrication device, a semiconductor fabrication system, a semiconductor fabrication device, a processing station, and / or a semiconductor processing station. The process of the above-noted EXAMPLE being further configured and implemented to operate in a low temperature environment during a temperature sensing time period, where the at least one temperature sensor is further configured to obtain a temperature within the low temperature environment; and where the low temperature environment comprises temperatures less than negative 50 C.

[0177] Accordingly, the disclosure has provided a device and process to address key issues with high-temperature Wafer-like sensors, including reliable electrical connections, enhanced adhesion, thermal expansion mismatch, strain-free centralized electrical connections, and the use of high-temperature resistant solid-state batteries to ensure sensor reliability and performance in semiconductor manufacturing environments. Further, the disclosure has provided a device and process that mayPATENTDocket No.: 131825.02150224-044-PRO / US provide solutions for high-temperature sensor challenges on silicon wafers by utilizing high-temperature conductive adhesives for robust electrical connections, machining recesses in wafers for stronger adhesion, matching thermal expansion coefficients with materials like Kovar to prevent bond fractures, centralizing electrical connections to reduce strain and alignment issues, and incorporating solid-state batteries capable of withstanding high temperatures, thereby enhancing sensor reliability and performance in semiconductor fabrication settings.

[0178] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the disclosure. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0179] It will be understood that when an element such as a layer, region, or substrate is referred to as being "on" or extending "onto" another element, it can be directly on or extend directly onto another element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. Likewise, it will be understood that when an element such as a layer, region, or substrate is referred to as being "over" or extending "over" another element, it can be directly over or extend directly over another element or intervening elements may also be present. In contrast, when an element is referred to as being "directly over" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to another element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.PATENTDocket No.: 131825.02150224-044-PRO / US

[0180] Relative terms such as "below" or "above" or "upper" or "lower" or "horizontal" or "vertical" may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figure s. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figure s.

[0181] The terminology used herein is for the purpose of describing particular aspects only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises," "comprising," "includes," and / or "including" when used herein specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0182] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0183] in aspects, the separate component 904 may be implemented at least in part in any type of computing devices, such as, e.g., a desktop computer, personal computer, a laptop / mobile computer, a personal data assistant (PDA), a mobile phone, a tablet computer, cloud computing device, and the like, with wired / wireless communications capabilities via the communication channels.

[0184] Further in accordance with various aspects of the disclosure, the methods described herein are intended for operation with dedicated hardware implementations including, but not limited to, PCs, PDAs, semiconductors, application specific integrated circuits (ASIC), programmable logic arrays, cloud computing devices, and other hardware devices constructed to implement the methods described herein.PATENTDocket No.: 131825.021502 24-044-PRO / US

[0185] The many features and advantages of the disclosure are apparent from the detailed specification, and, thus, it is intended by the appended claims to cover all such features and advantages of the disclosure which fall within the true spirit and scope of the disclosure. Further, since numerous modifications and variations will readily occur to those skilled in the art, it is not desired to limit the disclosure to the exact construction and operation illustrated and described, and, accordingly, all suitable modifications and equivalents may be resorted to that fall within the scope of the disclosure.

Claims

PATENTDocket No.: 131825.021502 24-044-PRO / USCLAIMS:1 . A wafer-like sensor configured and implemented to operate in a high temperature environment during a temperature sensing time period, the wafer-like sensor comprising: at least one temperature sensor configured to obtain a temperature within the high temperature environment; a support substrate; a temperature circuit component arranged on the support substrate; an electrical interface arranged on the support substrate; at least one power interconnect arranged on the support substrate; at least one data interconnect arranged on the support substrate; and at least one sensor interconnect arranged on the support substrate.

2. The wafer-like sensor according to claim 1 wherein the high temperature environment comprises an environment having temperatures in excess of 150° C.

3. The wafer-like sensor according to claim 1 wherein the temperature sensing time period is less than 7 minutes.

4. The wafer-like sensor according to claim 1 wherein the at least one temperature sensor is configured to provide and / or output temperature readings to the at least one sensor interconnect; and wherein the at least one sensor interconnect is configured to deliver the temperature readings to the temperature circuit component.

5. The wafer-like sensor according to claim 1 further comprising a battery component arranged on the support substrate, wherein the wafer-like sensor is powered by the battery component within the high temperature environment.PATENTDocket No.: 131825.02150224-044-PRO / US6. The wafer-like sensor according to claim 1 further comprising a battery component arranged on the support substrate, wherein the at least one temperature sensor and the temperature circuit component are powered by the battery component via the at least one power interconnect.

7. The wafer-like sensor according to claim 1 wherein the temperature circuit component is configured to process and / or provide temperature readings to the electrical interface.

8. The wafer-like sensor according to claim 1 wherein once the wafer-like sensor has been removed from the high temperature environment, the electrical interface is configured to connect to and provide temperature readings to a separate component.

9. The wafer-like sensor according to claim 1 wherein the at least one temperature sensor is implemented as a resistance temperature detector (RTD).

10. The wafer-like sensor according to claim 1 wherein the at least one temperature sensor comprises a plurality of the at least one temperature sensor arranged in various locations on the support substrate.11 . The wafer-like sensor according to claim 1 wherein the at least one temperature sensor, the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect are arranged on an upper substrate surface.

12. The wafer-like sensor according to claim 1 wherein the support substrate is configured with no vias, no apertures, and / or no through holes to limit heat transfer from a bottom substrate surface while in the high temperature environment.PATENTDocket No.: 131825.02150224-044-PRO / US13. The wafer-like sensor according to claim 1 further comprising a battery component arranged on the support substrate, wherein the at least one data interconnect, and / or the at least one sensor interconnect are configured and arranged to extend on an upper substrate surface and connect to the at least one temperature sensor, the temperature circuit component, the electrical interface, and / or the battery component.

14. The wafer-like sensor according to claim 1 wherein there are multiple implementations of the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect.

15. The wafer-like sensor according to claim 1 wherein the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect comprise metallic traces arranged on an upper substrate surface.

16. The wafer-like sensor according to claim 1 wherein the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect comprise silver traces arranged on an upper substrate surface.

17. The wafer-like sensor according to claim 1 wherein the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect are implemented with no crossovers and / or no vias.

18. The wafer-like sensor according to claim 1 wherein the wafer-like sensor comprises at least one alignment feature configured to align the wafer-like sensor with respect to a separate component and / or at least one corresponding alignment feature of a separate component.PATENTDocket No.: 131825.02150224-044-PRO / US19. The wafer-like sensor according to claim 18 wherein the at least one alignment feature is configured to ensure that the wafer-like sensor and / or the electrical interface are oriented and / or positioned with respect to the separate component.

20. The wafer-like sensor according to claim 1 wherein the at least one temperature sensor is attached to the at least one sensor interconnect with a conductive adhesive.21 . The wafer-like sensor according to claim 20 wherein the conductive adhesive is configured to withstand the high temperature environment.

22. The wafer-like sensor according to claim 20 wherein the at least one sensor interconnect is configured to extend along an upper substrate surface to a point adjacent the at least one temperature sensor.

23. The wafer-like sensor according to claim 20 wherein the at least one temperature sensor comprises signal pads arranged on a surface of the at least one temperature sensor.

24. The wafer-like sensor according to claim 23 wherein the at least one temperature sensor comprises two implementations of the signal pads; and wherein one of the signal pads is configured to receive power, current, and / or voltage and another one of the signal pads is configured to output a temperature signal.

25. The wafer-like sensor according to claim 23 wherein a first portion of the conductive adhesive is arranged on a first implementation of the at least one sensor interconnect and a first implementation of the signal pads; and wherein a second portion of the conductive adhesive is arranged on a second implementation of the at least one sensor interconnect and a second implementation of the signal pads.PATENTDocket No.: 131825.02150224-044-PRO / US26. The wafer-like sensor according to claim 1 wherein the at least one temperature sensor is arranged on an upper substrate surface and / or within the upper substrate surface; and wherein the at least one temperature sensor is attached to the upper substrate surface with a high temperature adhesive.

27. The wafer-like sensor according to claim 26 wherein a bottom surface of the at least one temperature sensor and a surface of the support substrate comprise the high temperature adhesive therebetween.

28. The wafer-like sensor according to claim 26 wherein the support substrate comprises a substrate recess configured to extend through the upper substrate surface; and wherein a bottom surface of the at least one temperature sensor and a bottom surface of the substrate recess comprises the high temperature adhesive therebetween.

29. The wafer-like sensor according to claim 28 wherein an area of the substrate recess adjacent the at least one temperature sensor comprises a roughened surface area to increase adhesion of the high temperature adhesive.

30. The wafer-like sensor according to claim 1 further comprising: a battery component arranged on the support substrate; and a mounting structure configured to mount the temperature circuit component and / or the battery component to the support substrate and / or an upper substrate surface.31 . The wafer-like sensor according to claim 30 wherein the mounting structure is configured to allow for thermal expansion of the temperature circuit component and / or the battery component.

32. The wafer-like sensor according to claim 30 wherein an implementation of the mounting structure is arranged on at least two sides the temperature circuit component and / or the battery component.PATENTDocket No.: 131825.02150224-044-PRO / US33. The wafer-like sensor according to claim 30 wherein the mounting structure is configured to support the temperature circuit component and / or the battery component above the support substrate and / or the upper substrate surface.

34. The wafer-like sensor according to claim 30 wherein the mounting structure comprises at least one anchor structure configured to be attached on or within the support substrate and / or the upper substrate surface.

35. The wafer-like sensor according to claim 34 wherein the at least one anchor structure is configured to be attached on or within the support substrate and / or the upper substrate surface with a high temperature adhesive.

36. The wafer-like sensor according to claim 34 wherein the mounting structure comprises a mounting component attached to the temperature circuit component and / or the battery component; and wherein the mounting component is attached to the at least one anchor structure.

37. The wafer-like sensor according to claim 36 wherein the mounting component and / or the at least one anchor structure are configured to allow for movement therebetween to allow for thermal expansion of the temperature circuit component, the battery component, and / or other components of the wafer-like sensor.

38. The wafer-like sensor according to claim 36 wherein the mounting structure comprises a holder configured to hold the mounting component to the at least one anchor structure.

39. The wafer-like sensor according to claim 34 further comprising a cover configured to cover an end of the temperature circuit component and / or the battery component.PATENTDocket No.: 131825.02150224-044-PRO / US40. The wafer-like sensor according to claim 36 wherein the at least one anchor structure comprises a retaining slot configured to receive the mounting component; and wherein the retaining slot is configured to allow for movement of the mounting component with respect to the at least one anchor structure.41 . The wafer-like sensor according to claim 36 wherein the mounting component is implemented as a rod extending from a side of the temperature circuit component and / or the battery component.

42. The wafer-like sensor according to claim 34 wherein the support substrate and / or the upper substrate surface comprises substrate recesses; wherein the at least one anchor structure comprises extensions at corresponding locations to the substrate recesses; and wherein the extensions are configured to be inserted into the substrate recesses to hold the at least one anchor structure on the support substrate.

43. The wafer-like sensor according to claim 42 wherein a high temperature adhesive is located between the substrate recesses and the extensions.

44. The wafer-like sensor according to claim 1 further comprising a battery component arranged on the support substrate, wherein the temperature circuit component, the battery component, and / or the wafer-like sensor are configured with contact connectors and / or contact pads; and wherein the contact connectors and / or the contact pads are configured to allow the temperature circuit component and / or the battery component to be electrically connected to and disconnected from to the waferlike sensor.

45. The wafer-like sensor according to claim 1 wherein the electrical interface comprises a plurality of electrical connections configured to connect to correspondingPATENTDocket No.: 131825.02150224-044-PRO / US implementations of at least one electrical connection arranged on a separate component.

46. The wafer-like sensor according to claim 45 further comprising a battery component arranged on the support substrate, wherein the plurality of electrical connections are configured to transfer power to the battery component and / or the temperature circuit component from the separate component.

47. The wafer-like sensor according to claim 45 wherein the plurality of electrical connections are configured to transfer data, instructions, and / or updates between the temperature circuit component and the separate component.

48. The wafer-like sensor according to claim 45 the plurality of electrical connections to transfer data, instructions, and / or updates between the temperature circuit component and the separate component.

49. The wafer-like sensor according to claim 45 wherein the plurality of electrical connections are arranged on the support substrate and / or an upper substrate surface.

50. The wafer-like sensor according to claim 45 wherein the plurality of electrical connections are connected to one or more of the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect.51 . The wafer-like sensor according to claim 45 wherein the plurality of electrical connections are arranged on an upper substrate surface in a symmetrical pattern.PATENTDocket No.: 131825.02150224-044-PRO / US52. The wafer-like sensor according to claim 45 wherein the plurality of electrical connections are arranged on an upper substrate surface in an asymmetrical pattern.

53. The wafer-like sensor according to claim 1 further comprising a battery component arranged on the support substrate, wherein the battery component comprises at least one battery and a battery housing; and wherein the at least one battery is arranged within the battery housing.

54. The wafer-like sensor according to claim 53 wherein the at least one battery is implemented as a solid-state battery, a quasi-solid-state battery, and / or a supercapacitor.

55. The wafer-like sensor according to claim 53 wherein the at least one battery is configured to withstand the high temperature environment for the temperature sensing time period.

56. The wafer-like sensor according to claim 53 wherein the battery housing is configured as a vacuum enclosure to provide additional insulation from the high temperature environment.

57. The wafer-like sensor according to claim 53 wherein the battery housing comprises a vacuum connection arranged on the battery housing that is configured to allow gas to be evacuated from the battery housing.

58. The wafer-like sensor according to claim 53 wherein the battery component comprises getters configured to remove gas from the battery housing.PATENTDocket No.: 131825.02150224-044-PRO / US59. The wafer-like sensor according to claim 53 wherein the battery component comprises thermal isolation pads arranged between the at least one battery and the battery housing.

60. The wafer-like sensor according to claim 1 wherein the temperature circuit component comprises sensor circuits and a circuit housing, and wherein the sensor circuits are arranged within the circuit housing.61 . The wafer-like sensor according to claim 60 wherein the circuit housing is configured as a vacuum enclosure to provide additional insulation from the high temperature environment.

62. The wafer-like sensor according to claim 60 wherein the circuit housing comprises a vacuum connection arranged on the circuit housing configured to allow gas to be evacuated from the circuit housing.

63. The wafer-like sensor according to claim 60 wherein the temperature circuit component comprises getters configured to remove gas from an evacuated space of the circuit housing.

64. The wafer-like sensor according to claim 60 wherein the temperature circuit component comprises thermal isolation pads arranged between the sensor circuits and the circuit housing.

65. The wafer-like sensor according to claim 1 wherein the support substrate comprises a circular shape, a square shape, a rectangular shape, and / or a semiconductor wafer shape.

66. The wafer-like sensor according to claim 1 wherein the support substrate is formed from silicon.PATENTDocket No.: 131825.02150224-044-PRO / US67. The wafer-like sensor according to claim 1 wherein the wafer-like sensor is configured to sense a temperature rate of rise with the at least one temperature sensor and, based on thermal time constants and dynamic performance of the waferlike sensor, calculate a temperature profile of the high temperature environment during the temperature sensing time period.

68. A system comprising the wafer-like sensor according to claim 1 further comprising a separate component configured to be operated outside of the high temperature environment.

69. The system according to claim 68 wherein the separate component comprises a substrate support to support the wafer-like sensor.

70. The system according to claim 69 wherein the separate component is a case that includes the substrate support to support the wafer-like sensor.71 . The system according to claim 68 wherein the separate component comprises at least one electrical connection configured to connect to the wafer-like sensor and / or the electrical interface.

72. The wafer-like sensor according to claim 1 wherein the wafer-like sensor is configured to be utilized in a system having a high temperature environment.

73. The wafer-like sensor according to claim 1 wherein the high temperature environment is part of a fabrication system, a fabrication device, a semiconductor fabrication system, a semiconductor fabrication device, a processing station, and / or a semiconductor processing station.PATENTDocket No.: 131825.02150224-044-PRO / US74. The wafer-like sensor according to claim 1 being further configured and implemented to operate in a low temperature environment during a temperature sensing time period, wherein the at least one temperature sensor is further configured to obtain a temperature within the low temperature environment; and wherein the low temperature environment comprises temperatures less than negative 50° C.

75. A process of implementing a wafer-like sensor configured and implemented to operate in a high temperature environment during a temperature sensing time period, the process of implementing a wafer-like sensor comprising: configuring at least one temperature sensor to obtain a temperature within the high temperature environment; providing a support substrate; arranging a temperature circuit component on the support substrate; arranging an electrical interface on the support substrate; arranging at least one power interconnect on the support substrate; arranging at least one data interconnect on the support substrate; and arranging at least one sensor interconnect on the support substrate.

76. The process of implementing a wafer-like sensor according to claim 75 wherein the high temperature environment comprises an environment having temperatures in excess of 150° C.

77. The process of implementing a wafer-like sensor according to claim 75 wherein the temperature sensing time period is less than 7 minutes.

78. The process of implementing a wafer-like sensor according to claim 75 wherein the at least one temperature sensor is configured to provide and / or output temperature readings to the at least one sensor interconnect; and wherein the at leastPATENTDocket No.: 131825.02150224-044-PRO / US one sensor interconnect is configured to deliver the temperature readings to the temperature circuit component.

79. The process of implementing a wafer-like sensor according to claim 75 further comprising arranging a battery component on the support substrate, wherein the process of implementing a wafer-like sensor is powered by the battery component within the high temperature environment.

80. The process of implementing a wafer-like sensor according to claim 75 further comprising arranging a battery component on the support substrate, wherein the at least one temperature sensor and the temperature circuit component are powered by the battery component via the at least one power interconnect.81 . The process of implementing a wafer-like sensor according to claim 75 wherein the temperature circuit component is configured to process and / or provide temperature readings to the electrical interface.

82. The process of implementing a wafer-like sensor according to claim 75 wherein once the wafer-like sensor has been removed from the high temperature environment, the electrical interface is configured to connect to and provide temperature readings to a separate component.

83. The process of implementing a wafer-like sensor according to claim 75 wherein the at least one temperature sensor is implemented as a resistance temperature detector (RTD).

84. The process of implementing a wafer-like sensor according to claim 75 wherein the at least one temperature sensor comprises a plurality of the at least one temperature sensor arranged in various locations on the support substrate.PATENTDocket No.: 131825.02150224-044-PRO / US85. The process of implementing a wafer-like sensor according to claim 75 wherein the at least one temperature sensor, the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect are arranged on an upper substrate surface.

86. The process of implementing a wafer-like sensor according to claim 75 wherein the support substrate is configured with no vias, no apertures, and / or no through holes to limit heat transfer from a bottom substrate surface while in the high temperature environment.

87. The process of implementing a wafer-like sensor according to claim 75 further comprising arranging a battery component on the support substrate, wherein the at least one data interconnect, and / or the at least one sensor interconnect are configured and arranged to extend on an upper substrate surface and connect to the at least one temperature sensor, the temperature circuit component, the electrical interface, and / or the battery component.

88. The process of implementing a wafer-like sensor according to claim 75 wherein there are multiple implementations of the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect.

89. The process of implementing a wafer-like sensor according to claim 75 wherein the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect comprise metallic traces arranged on an upper substrate surface.

90. The process of implementing a wafer-like sensor according to claim 75 wherein the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect comprise silver traces arranged on an upper substrate surface.PATENTDocket No.: 131825.02150224-044-PRO / US91 . The process of implementing a wafer-like sensor according to claim 75 wherein the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect are implemented with no crossovers and / or no vias.

92. The process of implementing a wafer-like sensor according to claim 75 wherein the wafer-like sensor comprises at least one alignment feature configured to align the wafer-like sensor with respect to a separate component and / or at least one corresponding alignment feature of a separate component.

93. The process of implementing a wafer-like sensor according to claim 92 wherein the at least one alignment feature is configured to ensure that the wafer-like sensor and / or the electrical interface are oriented and / or positioned with respect to the separate component.

94. The process of implementing a wafer-like sensor according to claim 75 wherein the at least one temperature sensor is attached to the at least one sensor interconnect with a conductive adhesive.

95. The process of implementing a wafer-like sensor according to claim 94 wherein the conductive adhesive is configured to withstand the high temperature environment.

96. The process of implementing a wafer-like sensor according to claim 94 wherein the at least one sensor interconnect is configured to extend along an upper substrate surface to a point adjacent the at least one temperature sensor.

97. The process of implementing a wafer-like sensor according to claim 94 wherein the at least one temperature sensor comprises signal pads arranged on a surface of the at least one temperature sensor.PATENTDocket No.: 131825.02150224-044-PRO / US98. The process of implementing a wafer-like sensor according to claim 97 wherein the at least one temperature sensor comprises two implementations of the signal pads; and wherein one of the signal pads is configured to receive power, current, and / or voltage and another one of the signal pads is configured to output a temperature signal.

99. The process of implementing a wafer-like sensor according to claim 97 wherein a first portion of the conductive adhesive is arranged on a first implementation of the at least one sensor interconnect and a first implementation of the signal pads; and wherein a second portion of the conductive adhesive is arranged on a second implementation of the at least one sensor interconnect and a second implementation of the signal pads.

100. The process of implementing a wafer-like sensor according to claim 75 wherein the at least one temperature sensor is arranged on an upper substrate surface and / or within the upper substrate surface; and wherein the at least one temperature sensor is attached to the upper substrate surface with a high temperature adhesive.

101. The process of implementing a wafer-like sensor according to claim 100 wherein a bottom surface of the at least one temperature sensor and a surface of the support substrate comprise the high temperature adhesive therebetween.

102. The process of implementing a wafer-like sensor according to claim 100 wherein the support substrate comprises a substrate recess configured to extend through the upper substrate surface; and wherein a bottom surface of the at least one temperature sensor and a bottom surface of the substrate recess comprises the high temperature adhesive therebetween.PATENTDocket No.: 131825.02150224-044-PRO / US103. The process of implementing a wafer-like sensor according to claim 102 wherein an area of the substrate recess adjacent the at least one temperature sensor comprises a roughened surface area to increase adhesion of the high temperature adhesive.

104. The process of implementing a wafer-like sensor according to claim 75 further comprising: arranging a battery component on the support substrate; and configuring a mounting structure to mount the temperature circuit component and / or the battery component to the support substrate and / or an upper substrate surface.

105. The process of implementing a wafer-like sensor according to claim 104 wherein the mounting structure is configured to allow for thermal expansion of the temperature circuit component and / or the battery component.

106. The process of implementing a wafer-like sensor according to claim 104 wherein an implementation of the mounting structure is arranged on at least two sides the temperature circuit component and / or the battery component.

107. The process of implementing a wafer-like sensor according to claim 104 wherein the mounting structure is configured to support the temperature circuit component and / or the battery component above the support substrate and / or the upper substrate surface.

108. The process of implementing a wafer-like sensor according to claim 104 wherein the mounting structure comprises at least one anchor structure configured to be attached on or within the support substrate and / or the upper substrate surface.

109. The process of implementing a wafer-like sensor according to claim 108 wherein the at least one anchor structure is configured to be attached on or within the support substrate and / or the upper substrate surface with a high temperature adhesive.PATENTDocket No.: 131825.02150224-044-PRO / US110. The process of implementing a wafer-like sensor according to claim 108 wherein the mounting structure comprises a mounting component attached to the temperature circuit component and / or the battery component; and wherein the mounting component is attached to the at least one anchor structure.

111. The process of implementing a wafer-like sensor according to claim 110 wherein the mounting component and / or the at least one anchor structure are configured to allow for movement therebetween to allow for thermal expansion of the temperature circuit component, the battery component, and / or other components of the wafer-like sensor.

112. The process of implementing a wafer-like sensor according to claim 110 wherein the mounting structure comprises a holder configured to hold the mounting component to the at least one anchor structure.

113. The process of implementing a wafer-like sensor according to claim 108 further comprising configuring a cover to cover an end of the temperature circuit component and / or the battery component.

114. The process of implementing a wafer-like sensor according to claim 110 wherein the at least one anchor structure comprises a retaining slot configured to receive the mounting component; and wherein the retaining slot is configured to allow for movement of the mounting component with respect to the at least one anchor structure.

115. The process of implementing a wafer-like sensor according to claim 110 wherein the mounting component is implemented as a rod extending from a side of the temperature circuit component and / or the battery component.PATENTDocket No.: 131825.02150224-044-PRO / US116. The process of implementing a wafer-like sensor according to claim 108 wherein the support substrate and / or the upper substrate surface comprises substrate recesses; wherein the at least one anchor structure comprises extensions at corresponding locations to the substrate recesses; and wherein the extensions are configured to be inserted into the substrate recesses to hold the at least one anchor structure on the support substrate.

117. The process of implementing a wafer-like sensor according to claim 116 wherein a high temperature adhesive is located between the substrate recesses and the extensions.

118. The process of implementing a wafer-like sensor according to claim 75 further comprising arranging a battery component on the support substrate, wherein the temperature circuit component, the battery component, and / or the wafer-like sensor are configured with contact connectors and / or contact pads; and wherein the contact connectors and / or the contact pads are configured to allow the temperature circuit component and / or the battery component to be electrically connected to and disconnected from to the wafer-like sensor.

119. The process of implementing a wafer-like sensor according to claim 75 wherein the electrical interface comprises a plurality of electrical connections configured to connect to corresponding implementations of at least one electrical connection arranged on a separate component.

120. The process of implementing a wafer-like sensor according to claim 119 further comprising arranging a battery component on the support substrate, wherein the plurality of electrical connections are configured to transfer power to the battery component and / or the temperature circuit component from the separate component.PATENTDocket No.: 131825.02150224-044-PRO / US121. The process of implementing a wafer-like sensor according to claim 119 wherein the plurality of electrical connections are configured to transfer data, instructions, and / or updates between the temperature circuit component and the separate component.

122. The process of implementing a wafer-like sensor according to claim 119 the plurality of electrical connections to transfer data, instructions, and / or updates between the temperature circuit component and the separate component.

123. The process of implementing a wafer-like sensor according to claim 119 wherein the plurality of electrical connections are arranged on the support substrate and / or an upper substrate surface.

124. The process of implementing a wafer-like sensor according to claim 119 wherein the plurality of electrical connections are connected to one or more of the at least one power interconnect, the at least one data interconnect, and / or the at least one sensor interconnect.

125. The process of implementing a wafer-like sensor according to claim 119 wherein the plurality of electrical connections are arranged on an upper substrate surface in a symmetrical pattern.

126. The process of implementing a wafer-like sensor according to claim 119 wherein the plurality of electrical connections are arranged on an upper substrate surface in an asymmetrical pattern.

127. The process of implementing a wafer-like sensor according to claim 75 further comprising arranging a battery component on the support substrate, wherein the battery component comprises at least one battery and a battery housing; and wherein the at least one battery is arranged within the battery housing.PATENTDocket No.: 131825.02150224-044-PRO / US128. The process of implementing a wafer-like sensor according to claim 127 wherein the at least one battery is implemented as a solid-state battery, a quasi-solid- state battery, and / or a supercapacitor.

129. The process of implementing a wafer-like sensor according to claim 127 wherein the at least one battery is configured to withstand the high temperature environment for the temperature sensing time period.

130. The process of implementing a wafer-like sensor according to claim 127 wherein the battery housing is configured as a vacuum enclosure to provide additional insulation from the high temperature environment.

131. The process of implementing a wafer-like sensor according to claim 127 wherein the battery housing comprises a vacuum connection arranged on the battery housing that is configured to allow gas to be evacuated from the battery housing.

132. The process of implementing a wafer-like sensor according to claim 127 wherein the battery component comprises getters configured to remove gas from the battery housing.

133. The process of implementing a wafer-like sensor according to claim 127 wherein the battery component comprises thermal isolation pads arranged between the at least one battery and the battery housing.

134. The process of implementing a wafer-like sensor according to claim 75 wherein the temperature circuit component comprises sensor circuits and a circuit housing, and wherein the sensor circuits are arranged within the circuit housing.PATENTDocket No.: 131825.02150224-044-PRO / US135. The process of implementing a wafer-like sensor according to claim 134 wherein the circuit housing is configured as a vacuum enclosure to provide additional insulation from the high temperature environment.

136. The process of implementing a wafer-like sensor according to claim 134 wherein the circuit housing comprises a vacuum connection arranged on the circuit housing configured to allow gas to be evacuated from the circuit housing.

137. The process of implementing a wafer-like sensor according to claim 134 wherein the temperature circuit component comprises getters configured to remove gas from an evacuated space of the circuit housing.

138. The process of implementing a wafer-like sensor according to claim 134 wherein the temperature circuit component comprises thermal isolation pads arranged between the sensor circuits and the circuit housing.

139. The process of implementing a wafer-like sensor according to claim 75 wherein the support substrate comprises a circular shape, a square shape, a rectangular shape, and / or a semiconductor wafer shape.

140. The process of implementing a wafer-like sensor according to claim 75 wherein the support substrate is formed from silicon.

141. The process of implementing a wafer-like sensor according to claim 75 wherein the wafer-like sensor is configured to sense a temperature rate of rise with the at least one temperature sensor and, based on thermal time constants and dynamic performance of the wafer-like sensor, calculate a temperature profile of the high temperature environment during the temperature sensing time period.PATENTDocket No.: 131825.021502 24-044-PRO / US142. The process of implementing a wafer-like sensor according to claim 75 wherein the wafer-like sensor is configured to be utilized in a system having a high temperature environment.

143. The process of implementing a wafer-like sensor according to claim 75 wherein the high temperature environment is part of a fabrication system, a fabrication device, a semiconductor fabrication system, a semiconductor fabrication device, a processing station, and / or a semiconductor processing station.

144. The process of implementing a wafer-like sensor according to claim 75 being further configured and implemented to operate in a low temperature environment during a temperature sensing time period, wherein the at least one temperature sensor is further configured to obtain a temperature within the low temperature environment; and wherein the low temperature environment comprises temperatures less than negative 50° C.

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