Laser and preparation method therefor, and optical assembly, optical module, and optical communication network system

By setting a highly reflective second semiconductor layer and a blocking layer in the dielectric layer on the side of the photonic crystal layer, the problems of carrier diffusion and light leakage are solved, the electro-optic conversion efficiency and beam quality of the laser are improved, and the threshold current is reduced.

WO2026113377A1PCT designated stage Publication Date: 2026-06-04HUAWEI TECH CO LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
HUAWEI TECH CO LTD
Filing Date
2025-06-25
Publication Date
2026-06-04

AI Technical Summary

Technical Problem

Semiconductor lasers suffer from carrier diffusion and light leakage during operation, resulting in poor electro-optical conversion efficiency and suboptimal performance.

Method used

A second semiconductor layer is disposed on the side of the photonic crystal layer. The second semiconductor layer is composed of multiple material layers with different refractive indices and has high reflectivity characteristics, which can concentrate light and suppress light leakage. At the same time, a barrier layer is disposed in the dielectric layer to localize the carrier diffusion channel.

Benefits of technology

It improves the electro-optical conversion efficiency of the laser, reduces the threshold current, improves the linewidth and beam quality of the laser, and enhances the slope efficiency of the optical field-current-voltage curve.

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Abstract

A laser (10) and a preparation method therefor, and an optical assembly, an optical module, and an optical communication network system (1), which relate to the technical field of semiconductors, and are used for solving the problems of light leakage and carrier diffusion in lasers. The laser (10) comprises a first semiconductor layer (110), a first dielectric layer (210), an active layer (310), a photonic crystal layer (410) and a second semiconductor layer (120) which are disposed on the active layer (310), and a second dielectric layer (220). The first semiconductor layer (110), the first dielectric layer (210), and the active layer (310) are stacked. The second semiconductor layer (120) is disposed around the photonic crystal layer (410). The second semiconductor layer (120) comprises a plurality of first material layers (121) and a plurality of second material layers (122), The first material layers (121) and the second material layers (122) are alternately disposed around a side surface of the photonic crystal layer (410). The refractive index of the first material layer (121) is different from the refractive index of the second material layer (122).
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