Method for manufacturing vapor cell and device for manufacturing vapor cell

Abstract

This method for manufacturing a vapor cell comprises: a step for loading, into a chuck of a dispensing chamber, a lower substrate in which a lower glass substrate is bonded to a semiconductor substrate having a plurality of through-holes formed therein; a step for lowering a first pressure of the dispensing chamber to maintain a second pressure and cooling the chuck to lower a first temperature of the lower substrate to a second temperature; a step for purging and filling the dispensing chamber with inert gas at the second temperature so that the dispensing chamber has a third pressure higher than the second pressure; and a step for dispensing alkali metal droplets to preliminary vapor cells corresponding to the through-holes in the lower substrate.

Description

Steam cell manufacturing method and steam cell manufacturing device

[0001] The present invention relates to a steam cell manufacturing device, and more specifically, to a steam cell manufacturing device having a cluster structure.

[0002] This research is related to the development of a high-insulation physical package for a micro-atomic clock, a Nano Open Innovation Lab collaborative project conducted at the National Institute of Science and Technology (NIST) with funding from the Ministry of Science and ICT (government), and the development of sensor platform technology for the convergence and miniaturization of multi-sensors, a project conducted at the National Institute of Science and Technology with funding from the Ministry of Trade, Industry and Energy (government) and supported by the Korea Institute of Planning and Evaluation for Industrial Technology (IPET), a project conducted at the National Institute of Science and Technology (UNIST).

[0003] Typically, steam cells utilized a glassblowing-based manufacturing method. However, the glassblowing method is not suitable for mass production, suffers from poor uniformity, and has limitations in miniaturization.

[0004] Vapor cells with a MEMS (Micro Electro Mechanical Systems) structure can be mass-produced and are used in atomic magnetometers or atomic clocks.

[0005] Recently, a method for manufacturing MEMS-structured vapor cells using MEMS processes (particularly through-silicon processes) and bonding processes has been proposed. The method of manufacturing MEMS-structured vapor cells using MEMS processes offers the advantages of mass producibility and miniaturization. However, due to visible light absorption by the silicon walls constituting the vapor cell, there is only one optical channel. Although attempts have been made to implement two or more optical channels by creating mirrors inside the MEMS, it is very difficult to implement mirrors with a 45-degree inclined surface.

[0006] In addition, it is very difficult to inject only alkali metals into a vapor cell of a MEMS structure without a dispenser.

[0007] Generally, a method using a medium is employed to inject alkali metals into a vapor cell, and alkali metals are produced through the following chemical formula.

[0008] BaN6+ {alkali atom}Cl → BaCl + 3N2+ {alkali atom}

[0009] 2CsN3(liquid) → 2Cs(liquid) + 3N2(gas)

[0010] The technical problem to be solved by the present invention is to provide a vapor cell manufacturing apparatus including a dispensing chamber that directly dispenses alkali metals.

[0011] A method for manufacturing a vapor cell according to one aspect of the present invention comprises: loading a lower substrate, wherein a lower glass substrate and a semiconductor substrate having a plurality of through holes formed therein, are bonded to a chuck of a dispensing chamber; reducing the first pressure of the dispensing chamber to a second pressure and cooling the chuck to reduce the first temperature of the lower substrate to a second temperature; purging and filling the dispensing chamber with an inert gas at the second temperature so that the pressure becomes a third pressure greater than the second pressure; and dispensing alkali metal droplets into pre-vapor cells corresponding to the through holes of the lower substrate.

[0012] Additionally, the method may further include the steps of: reducing the pressure of the dispensing chamber at the second temperature to maintain the first pressure and transferring the chuck, the lower substrate mounted on the chuck, and the upper substrate disposed on the lower substrate to the bonding chamber; sequentially loading the lower substrate and the upper substrate onto the bonding chuck of the bonding chamber in the bonding chamber maintained at the first bonding temperature and the first bonding pressure; and bonding the upper substrate and the lower substrate.

[0013] Additionally, the step of bonding the upper substrate and the lower substrate may include: injecting a buffer gas into the bonding chamber to increase the pressure to a second bonding pressure; removing a spacer between the lower substrate and the upper substrate; pressurizing the lower substrate and the upper substrate; increasing the temperature of the lower substrate and the upper substrate in the bonding chamber to a second bonding temperature; and applying a high voltage between the lower substrate and the upper substrate in stages.

[0014] In addition, the point at which the pressure of the bonding chamber increases due to the buffer gas, the point at which the spacer is removed, the point at which force is applied, the point at which the temperature increases, and the point at which voltage is applied may follow in sequence.

[0015] In addition, the pressure of the bonding chamber by the buffer gas may further include a step of being reduced again.

[0016] Additionally, the method may further include the step of baking the lower substrate, which is bonded to the lower glass substrate and the semiconductor substrate including a plurality of through holes, in a first bake chamber; and the step of baking the upper substrate in a second bake chamber.

[0017] A vapor cell manufacturing apparatus according to another aspect of the present invention comprises: a transfer chamber equipped with a robot arm; a bonding chamber connected to the transfer chamber; and a dispensing chamber connected to the transfer chamber and including a dispenser for dispensing alkali metal droplets. A lower substrate comprises a lower glass substrate and a semiconductor substrate having a plurality of through holes formed therein, and the lower glass substrate and the semiconductor substrate are bonded to each other to provide a plurality of pre-vapor cells, and the dispenser dispenses the alkali metal droplets to the plurality of pre-vapor cells of the lower substrate transferred into the dispensing chamber, and the lower substrate containing the alkali metal droplets is combined with an upper substrate covering the pre-vapor cells and then anodic bonded under pressure within the bonding chamber.

[0018] Additionally, it may further include a first load lock chamber for housing the lower substrate; and a second load lock chamber for housing the upper substrate.

[0019] Additionally, the apparatus further includes a first baking chamber connected to the transfer chamber; and a second baking chamber connected to the transfer chamber, wherein the first baking chamber bakes the lower substrate and the second baking chamber bakes the upper substrate.

[0020] Additionally, the dispensing chamber may further include a chuck capable of cooling the lower substrate; and an alignment moving part for alignment and movement.

[0021] Additionally, the bonding chamber may include a chuck capable of controlling the temperature of the lower substrate; and a pressurizing part comprising an upper electrode that pressurizes the upper substrate aligned with the lower substrate and applies a high voltage.

[0022] A method for manufacturing a vapor cell according to one embodiment of the present invention provides a method for manufacturing a vapor cell in which, after dispensing to each of the cells on a lower substrate including a plurality of cells in a dispensing chamber, anodic bonding is performed between the lower substrate and the upper substrate in a bonding chamber, thereby enabling the manufacture of a vapor cell with a simple structure.

[0023] FIG. 1 is a conceptual diagram showing a steam cell manufacturing apparatus according to one embodiment of the present invention.

[0024] FIG. 2 is a conceptual diagram showing a baking chamber of a steam cell manufacturing device according to one embodiment of the present invention.

[0025] FIG. 3 is a conceptual diagram showing a dispensing chamber of a steam cell manufacturing device according to one embodiment of the present invention.

[0026] FIG. 4 is a conceptual diagram showing a dispenser of a steam cell manufacturing device according to one embodiment of the present invention.

[0027] FIG. 5 is a conceptual diagram showing a bonding chamber of a steam cell manufacturing device according to one embodiment of the present invention.

[0028] FIGS. 6 and FIGS. 7 are flowcharts illustrating a method for manufacturing a vapor cell according to an embodiment of the present invention.

[0029] Figure 8 is a diagram showing the operation of a dispensing chamber.

[0030] Figure 9 is a diagram showing the operation of the bonding chamber over time representing the bonding step.

[0031] FIGS. 10 and FIGS. 11 are drawings illustrating the operation of a bonding chamber according to an embodiment of the present invention.

[0032] Semiconductor manufacturing equipment can utilize a cluster structure in which multiple process chambers are arranged around a transfer chamber. Using manufacturing equipment with a cluster structure enables mass production of MEMS vapor cells.

[0033] [Atmospheric Non-Open Alkali Metal Injection and Bonding Device]

[0034] The vapor cell cluster manufacturing facility may include a bonding chamber, a transfer chamber, an alkali metal dispensing chamber, and a load lock chamber.

[0035] A bonding chamber performs anodic bonding of a lower substrate and an upper substrate, maintains a vacuum (or pressure of a specific gas), and includes an electrode capable of applying voltage to the lower substrate and the upper substrate, a heater capable of heating the lower substrate and the upper substrate, and a pressurizing part for pressing the lower substrate and the upper substrate.

[0036] The transfer chamber includes a transfer device (rail or robot arm) for smoothly transferring the substrate. The substrate may be transferred from a dispensing chamber for alkali metal dispensing to a bonding chamber, from a baking chamber to a bonding chamber, or from a load lock chamber to a dispensing chamber.

[0037] The dispensing chamber may include a temperature control unit capable of cooling the substrate to 0 degrees Celsius or lower by filling it with an inert gas (or purge gas), a dispenser capable of melting an alkali metal and dispensing it to specific locations on the substrate, and an alignment and movement device for alignment and movement with two axes of movement and rotation (x,y,Θ).

[0038] The lower substrate may be prepared by anode bonding a semiconductor substrate having a plurality of through holes and a lower glass substrate. The lower substrate may include a plurality of pre-vapor cells. The pre-vapor cells may be formed such that a plurality of through holes are sealed by the upper substrate.

[0039] The dispenser may be positioned at the top of the dispensing chamber. The dispenser may be mounted on an alignment moving device capable of moving and rotating in a two-dimensional plane and performing vertical movement. The alignment moving device may move the dispenser to dispense an alkali metal at each predetermined position to each pre-vapor cell of the lower substrate.

[0040] The dispenser includes an alkali metal storage unit, a nozzle unit connected to the alkali metal storage unit, a valve connected to an inert gas for controlling the size of a droplet, a nozzle unit, and a heating unit for heating the alkali metal storage unit. The alkali metal storage unit may store an alkali metal.

[0041] The dispenser heats and liquefies the alkali metal stored in the alkali metal reservoir, then injects an inert gas (e.g., Ar gas) to form a droplet of alkali metal through the nozzle. In the case of Cs, the melting point is 28.5 degrees Celsius. In the case of Rb, the melting point is 28.5 degrees Celsius.

[0042] During dispensing, the lower substrate is fixed by a chuck and can be maintained at 0 degrees Celsius or lower through a temperature control unit of the chuck. The temperature control unit may include a chiller that circulates a refrigerant.

[0043] After forming a droplet on the nozzle of the dispenser, the nozzle portion and the substrate can be brought into contact with each other to pick up the droplet on the substrate. After contact, the process includes returning the dispenser or the substrate to their original positions.

[0044] During dispensing, the dispenser can move two-dimensionally to dispense alkali metal to pre-vapor cells arranged in a matrix form. Or, during dispensing, the chuck can move two-dimensionally to dispense alkali metal to pre-vapor cells arranged in a matrix form.

[0045] The bonding chamber may be equipped with a bonding chuck. The bonding chuck may include a temperature control unit. The upper part of the bonding chuck may include a pressurizing unit. The pressurizing unit may move relative to the bonding chuck to apply a high voltage while pressing the lower substrate and the upper substrate to perform anodic bonding.

[0046] The bonding chamber can sequentially load a lower substrate and an upper substrate dispensed onto a bonding chuck. The upper substrate may be placed on the lower substrate using a spacer positioned on the outer side of the bonding chuck. The spacer consists of three or more thin plate-shaped pins with a thickness of approximately 0.3 mm arranged around the lower substrate.

[0047] A spacer is a device that maintains a gap between an upper substrate and a lower substrate to be bonded on a bonding chuck, thereby helping to maintain a vacuum in the through holes (or pre-vapor cells) of the lower substrate or to inject a specific buffer gas. The spacer can perform the function of a lift pin to position the upper substrate on the lower substrate.

[0048] The spacer can rotate to position the upper substrate aligned with the lower substrate on the bonding chuck. When the spacer is removed between the upper substrate and the lower substrate, the lower substrate and the upper substrate placed on the bonding chuck can be heated by the temperature control unit of the bonding chuck. The lower substrate and the upper substrate are pressed by a pressurizing unit, and can be anodic bonded by a high voltage applied between the upper electrode of the pressurizing unit and the bonding chuck.

[0049] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete and to ensure that the spirit of the present invention is sufficiently conveyed to those skilled in the art. In the drawings, components are exaggerated for clarity. Throughout the specification, parts indicated by the same reference numeral represent the same components.

[0050] FIG. 1 is a conceptual diagram showing a steam cell manufacturing apparatus according to one embodiment of the present invention.

[0051] FIG. 2 is a conceptual diagram showing a baking chamber of a steam cell manufacturing device according to one embodiment of the present invention.

[0052] FIG. 3 is a conceptual diagram showing a dispensing chamber of a steam cell manufacturing device according to one embodiment of the present invention.

[0053] FIG. 4 is a conceptual diagram showing a dispenser of a steam cell manufacturing device according to one embodiment of the present invention.

[0054] FIG. 5 is a conceptual diagram showing a bonding chamber of a steam cell manufacturing device according to one embodiment of the present invention.

[0055] Referring to FIGS. 1 to 5, a vapor cell manufacturing apparatus (100) according to one embodiment of the present invention comprises: a transfer chamber (107) having a robot arm (107a); a bonding chamber (103) connected to the transfer chamber; and a dispensing chamber (104) connected to the transfer chamber (107) and including a dispenser (20) for dispensing alkali metal droplets (19). A lower substrate (10) comprises a lower glass substrate (14) and a semiconductor substrate (12) having a plurality of through holes formed therein. The lower glass substrate (14) and the semiconductor substrate (12) are bonded to each other to provide a plurality of pre-vapor cells (12a). The dispenser (20) dispenses alkali metal droplets to the pre-vapor cells (12a) of the lower substrate (10) that have been transferred into the dispenser chamber (104). The lower substrate (10) containing the alkali metal droplet (19) is combined with the upper substrate (15) covering the pre-vapor cells (12a) and then anodic bonded under pressure within the bonding chamber (103).

[0056] The transfer chamber (107) may be a hexagonal chamber. The transfer chamber (107) may be exhausted by a separate vacuum pump and maintained at a predetermined pressure by gas injection. The transfer chamber (107) may include a transfer device (107a), such as a robot arm. The structure of the transfer chamber may be varied in many ways.

[0057] The dispensing chamber (104) may be connected to the transfer chamber (107) via a gate valve. The dispensing chamber (104) may be evacuated by a separate vacuum pump (126) and maintained at a predetermined pressure by gas injection through a valve (124). The chuck (127) of the dispensing chamber (104) may include a temperature control unit. The temperature control unit may cool the chuck (127) and the lower substrate (10) to 0 degrees Celsius or lower. The temperature control unit may include a chiller (128) that circulates a refrigerant.

[0058] Referring to FIG. 3, the dispensing chamber (104) may include a chuck (127) that can be filled with an inert gas (or purge gas) and cool a substrate to 0 degrees or less, a dispenser (20) that can melt an alkali metal and dispense it to specific locations on the substrate, and a two-axis movement and rotation (x,y,Θ) alignment movement device (30) for aligning and moving the dispenser (20).

[0059] The dispenser (20) may be positioned on the inner upper side of the dispensing chamber body (122). The dispenser (20) may be mounted on an alignment moving device (30) that can move and rotate in a two-dimensional plane and perform vertical movement. The alignment moving device (30) can move the dispenser (20) to dispense alkali metal at each predetermined position to each pre-vapor cell (10a) of the lower substrate (10).

[0060] Referring to FIG. 4, the dispenser (20) includes an alkali metal storage unit (22), a nozzle unit (22a) connected to the alkali metal storage unit (22), a valve (26) connected to an inert gas (27) for controlling the size of a droplet, and heating units (24, 25) for heating the nozzle unit and the alkali metal storage unit. The alkali metal storage unit (22) may store an alkali metal (23). The alkali metal storage unit (22) may include a cone shape. The heating unit may include a heating housing (24) and a heater heating wire (25) surrounding the heating housing.

[0061] The dispenser (20) heats and liquefies the alkali metal (23) stored in the alkali metal storage unit (22), and then injects an inert gas (e.g., Ar gas) to form a droplet of alkali metal through the nozzle unit (22a). In the case of Cs, the melting point is 28.5 degrees Celsius. In the case of Rb, the melting point is 28.5 degrees Celsius.

[0062] During dispensing, the lower substrate (10) is fixed by a chuck (127) and can be maintained at 0 degrees Celsius or lower through a temperature control unit (128) of the chuck (127). The temperature control unit (128) may include a chiller that circulates a refrigerant. The chuck (127) may include a passage through which a refrigerant can flow to control the temperature. The chuck (127) may include a lift pin (127a) capable of loading the substrate.

[0063] After forming a droplet (19) in the nozzle part (22a), the nozzle part (22a) and the lower substrate (10) can be brought into contact with each other to take (or contact) the droplet on the lower substrate (10). After contact, the process includes moving the dispenser (20) or the lower substrate (10) to another location.

[0064] During dispensing, the dispenser (20) can move two-dimensionally to dispense alkali metal into the pre-vapor cells (10a) arranged in a matrix form.

[0065] Or, during dispensing, the chuck (127) can move two-dimensionally to dispense alkali metal into pre-vapor cells (10a) arranged in a matrix form.

[0066] Referring to FIG. 5, the bonding chamber (103) may be connected to the transfer chamber (107) via a gate valve. The bonding chamber (103) may include a pressurizing part (40) and an upper electrode (46) to which voltage is applied. The pressurizing part (40) may be positioned on the upper inner side of the bonding chamber body (132). The pressurizing part (40) may include an upper member (42) capable of temperature control and pressurization, an insulating member (44) positioned below the upper member (42), and an upper electrode (46) positioned below the insulating member (44) to which voltage is applied. The upper electrode (46) may be a plate-shaped conductor and may be electrically connected to an external power source. The insulating member (44) may be a plate-shaped non-conductor. The upper member (42) is a part to which pressure is transmitted by a piston, etc., and may be connected to a linear motion drive part such as a piston, etc. The above linear motion drive unit may include a piston or a bearing and a motor that convert rotational motion into linear motion. The upper member (42) may include a temperature control unit to control the temperature. The temperature control unit disposed on or connected to the upper member may be a chiller (48).

[0067] The above upper member can be heated to a level of 200 degrees Celsius during anodic bonding.

[0068] The bonding chamber (103) can be evacuated by a separate vacuum pump (136) and maintained at a predetermined pressure by injecting gas through a valve (134). The bonding chamber (103) includes a bonding chuck (137), and the bonding chuck (137) may include a temperature control unit. The temperature control unit may heat the bonding chuck (137), the lower substrate (10), and the upper substrate (15) to perform anodic bonding. The temperature control unit may include a chiller (138) that circulates a refrigerant. The bonding chuck (137) may include a lift pin (137a) for loading a substrate.

[0069] The spacer (52) is a mechanism that maintains a gap between the upper substrate (15) and the lower substrate (10) to be bonded to the lower substrate (10) on the bonding chuck (137), thereby maintaining a vacuum in the through holes (or pre-vapor cells) of the lower substrate (10) or assisting in the injection of a specific buffer gas. The spacer (52) can perform the function of a lift pin to position the upper substrate (15) on the lower substrate (10), similar to a lift pin.

[0070] The spacer (52) can load the upper substrate (15) by performing vertical and rotational movements, such as a lift pin. The spacer (52) can rotate to position the upper substrate (15) in an aligned state on the lower substrate (10) on the bonding chuck (137). When the spacer (52) is removed between the upper substrate (15) and the lower substrate (10), the lower substrate (10) and the upper substrate (15) placed on the bonding chuck (137) can be heated by the temperature control unit of the bonding chuck (137). The lower substrate (10) and the upper substrate (15) are pressed by the pressurizing unit (40), and can be anodic bonded by a high voltage applied between the upper electrode (46) of the pressurizing unit (40) and the bonding chuck (137). The bonding chuck (137) may include a conductor.

[0071] The first load lock chamber (105) accommodates the lower substrate (10). The first load lock chamber (105) may be connected to the transfer chamber (107) via a gate valve. The first load lock chamber (105) may be evacuated by a separate vacuum pump and maintained at a predetermined pressure by gas injection. The first load lock chamber (105) may accommodate a plurality of lower substrates (20) stored in a cassette.

[0072] The second load lock chamber (106) can accommodate the upper substrate (15). The second load lock chamber (106) can be connected to the transfer chamber (107) through a gate valve. The second load lock chamber (106) can be evacuated by a separate vacuum pump and maintained at a predetermined pressure by gas injection. The upper substrate (15) can be mounted in a cassette and accommodated in the second load lock chamber (106).

[0073] The lower substrate (10) is transferred from the first load lock chamber (105) through the transfer chamber (107) to the dispensing chamber (104). Subsequently, the lower substrate (10) is transferred from the dispensing chamber (104) through the transfer chamber (107) to the bonding chamber (103). The substrate, after bonding is completed in the bonding chamber (103), is transferred to the first load lock chamber (105).

[0074] The upper substrate (15) is transferred from the second load lock chamber (106) through the transfer chamber (107) to the bonding chamber (103).

[0075] The first baking chamber (101) is connected to the transfer chamber (107). The first baking chamber (101) bakes the chuck (117) and the lower substrate (10) placed on the chuck. The first baking chamber (101) may be connected to the transfer chamber (107) via a gate valve. The first baking chamber (101) may be evacuated by a separate vacuum pump (116) and maintained at a predetermined pressure by gas injection through a valve (114). The chuck (117) of the first baking chamber (101) may include a temperature control unit. The temperature control unit may heat the chuck (117) and the lower substrate (10) to a predetermined temperature to proceed with the baking process. During the baking process, impurities attached to the chuck (117) and the lower substrate (10) may be sublimated and removed. The chuck (117) may include a lift pin (117a) for loading the substrate.

[0076] The second baking chamber (102) is connected to the transfer chamber (107). The second baking chamber (102) bakes the upper substrate (15). The second baking chamber (102) may be connected to the transfer chamber (107) through a gate valve. The second baking chamber (102) may be evacuated by a separate vacuum pump and maintained at a predetermined pressure by gas injection. The second baking chamber (102) may include a chuck (117) and a temperature control unit. The temperature control unit may heat the upper substrate (15) to a predetermined temperature to carry out the baking process. During the baking process, impurities attached to the upper substrate (15) may be sublimated and removed.

[0077] The lower substrate (10) may include a semiconductor substrate (12) and a lower glass substrate (14). The semiconductor substrate (12) and the lower glass substrate (14) may have the same shape. The semiconductor substrate (12) may be a silicon substrate and may include periodically arranged through holes (12a). The lower substrate (10) may include a lower glass substrate (14) disposed on the lower surface of the semiconductor substrate (12). Each of the through holes (12a) may provide a preliminary vapor cell (10a). The preliminary vapor cell (10a) may contain an alkali metal and then be blocked by the upper substrate (15) to form a vapor cell.

[0078] The lower glass substrate (14) and the upper substrate (15) may be glass substrates. The lower glass substrate (14) and the upper substrate (15) may have the same shape.

[0079] FIGS. 6 and FIGS. 7 are flowcharts illustrating a method for manufacturing a vapor cell according to an embodiment of the present invention.

[0080] Referring to FIGS. 6 and 7, a method for manufacturing a vapor cell according to an embodiment of the present invention comprises the steps of: baking a lower substrate (10) in a first bake chamber (101) in which a semiconductor substrate (12) having a lower glass substrate (14) and a plurality of through holes (12a) is bonded; baking an upper substrate (15) in a second bake chamber (102) (S112); loading the lower substrate (10), in which the lower glass substrate (14) and a semiconductor substrate (12) having a plurality of through holes (12a) formed therein, into a chuck of a dispensing chamber (104) at a first pressure and a first temperature (S122); reducing the pressure of the dispensing chamber (104) to a second pressure and maintaining it, and cooling the chuck to reduce the second temperature of the lower substrate (10) (S124). and includes the step (S126) of dispensing alkali metal to pre-vapor cells (10a) corresponding to through holes (12a) of the lower substrate (10) while maintaining the dispensing chamber (104) at a second temperature and purge gas at a third pressure.

[0081] A method for manufacturing a vapor cell according to one embodiment of the present invention may further include the steps of: reducing the pressure of a dispensing chamber (104) at a second temperature to maintain the second pressure and transferring a chuck, a lower substrate (10) mounted on the chuck, and an upper substrate (15) disposed on the lower substrate (10) to a bonding chamber (103) (S129); loading the lower substrate (10) and the upper substrate (15) sequentially onto a bonding chuck of the bonding chamber (103) in the bonding chamber (103) maintained at a first bonding temperature and a first bonding pressure (S132); and bonding the upper substrate (15) and the lower substrate (10) (S134).

[0082] The step (S134) of bonding the upper substrate (15) and the lower substrate (10) may include: injecting buffer gas into the bonding chamber (103) to increase the pressure to a second bonding pressure (S135); removing the spacer between the lower substrate (10) and the upper substrate (15) (S136); pressurizing the lower substrate (10) and the upper substrate (15) (S137); increasing the temperature of the lower substrate (10) and the upper substrate (15) in the bonding chamber (103) to a second bonding temperature (S138); and applying a high voltage in stages between the lower substrate (10) and the upper substrate (15) (S139).

[0083] Figure 8 is a diagram showing the operation of a dispensing chamber.

[0084] Referring to FIG. 8, a lower substrate (10) in which a lower glass substrate (14) and a semiconductor substrate (12) having a plurality of through holes (12a) formed therein can be loaded onto a chuck of a dispensing chamber (104) at a first pressure and a first temperature (S122). The lower substrate (10) is loaded onto the chuck using a lift pin. In this case, the temperature of the chuck may be a first temperature and the pressure may be a first pressure. The first temperature may be room temperature and the first pressure may be a pressure at the level of atmospheric pressure.

[0085] Next, after the lower substrate (10) is loaded onto the chuck, the temperature of the chuck can be reduced to a second temperature. The second temperature may be 0 degrees Celsius or lower. The pressure of the bonding chamber (103) can be reduced by a vacuum pump. That is, the pressure of the dispensing chamber (104) can be reduced to maintain the second pressure and the chuck can be cooled to reduce the second temperature of the lower substrate (10) (S124).

[0086] Next, the pressure of the bonding chamber (103) can be increased to a third pressure by filling it with purge gas. The third pressure may be at the level of atmospheric pressure. At the third pressure, the dispenser (20) can dispense alkali metal to each of the pre-vapor cells (10a). To do this, the dispenser (20) can move vertically and horizontally by means of an alignment moving device (30). That is, at the second temperature, the dispensing chamber (104) can be filled with purge gas to maintain the third pressure, and alkali metal can be dispensed to the pre-vapor cells (10a) corresponding to the through holes of the lower substrate (S126).

[0087] Subsequently, after dispensing is completed, the pressure of the dispensing chamber (104) is reduced from the second temperature to maintain the second pressure, and the chuck, the lower substrate (10) mounted on the chuck, and the upper substrate (15) placed on the lower substrate (10) can be transferred to the bonding chamber (103) (S129).

[0088] Next, a new lower substrate (10) may be loaded. In this case, the lower substrate (10), which is bonded to a lower glass substrate (14) and a semiconductor substrate (12) having a plurality of through holes (12a) formed therein, may be loaded into the chuck of the dispensing chamber (104) at a second pressure and a second temperature. After all lower substrates (10) have been processed, the temperature of the dispensing chamber (104) may be changed to a first temperature, and the pressure may be changed to a first pressure.

[0089] Figure 9 is a diagram showing the operation of the bonding chamber over time representing the bonding step.

[0090] FIGS. 10 and FIGS. 11 are drawings illustrating the operation of a bonding chamber according to an embodiment of the present invention.

[0091] Referring to FIGS. 9 to 11, a lower substrate (10) and an upper transparent substrate (15) are sequentially loaded onto a bonding chuck of a bonding chamber (103) maintained at a first bonding temperature and a first bonding pressure (S132). The pressure of the bonding chamber (103) may be a vacuum state evacuated to a low pressure at the first bonding pressure. The temperature of the bonding chuck may be at the first bonding temperature at a level of 0 degrees Celsius.

[0092] Loading (S132a) of the lower substrate (10) involves loading the lower substrate (10) onto the bonding chuck using a lift pin. Loading (S132b) of the upper transparent substrate (15) involves loading it onto the lower substrate (10) of the bonding chuck using a spacer. The spacer operates similarly to the lift pin for loading the upper transparent substrate (15). The spacer descends and is positioned between the lower substrate (10) and the upper transparent substrate (15).

[0093] Next, the method may further include a step (S134) of bonding the upper substrate (15) and the lower substrate (10). Specifically, a step (S135) is performed to increase the pressure to a second bonding pressure by injecting a buffer gas into the bonding chamber (103). Accordingly, the pressure in the bonding chamber (103) reaches the second bonding pressure. The buffer gas may include at least one of neon (Ne), nitrogen (N2), argon (Ar), xenon (Xe), and helium (He). When the pre-vapor cell (10a) is filled with the buffer gas, the spacer between the lower substrate (10) and the upper transparent substrate (15) is removed (S136). The spacer may be removed by rotational motion. Accordingly, the lower substrate (10) and the upper transparent substrate (15) come into contact with each other to form a vapor cell.

[0094] A step (S137) of applying pressure to the lower substrate (10) and the upper substrate (15) may be performed. The pressing process may apply pressure to the lower substrate (10) and the upper substrate (15) between the bonding chuck and the pressing part by lowering the pressing part.

[0095] A step (S138) of increasing the temperature of the lower substrate (10) and the upper substrate (15) in the bonding chamber (103) to a second bonding temperature may be performed. The second bonding temperature may be at the level of 200 degrees Celsius. The temperature of the lower substrate (10) and the upper substrate (15) may be achieved by chillers (138, 48).

[0096] Step (S139) can be performed by applying a high voltage in stages between the lower substrate (10) and the upper substrate (15). The high voltage can be applied as a DC high voltage between the upper electrode (46) and the bonding chuck (137). The bonding chuck (137) can be electrically connected directly to the semiconductor substrate (12) and the probe pin.

[0097] The point in time when the pressure of the bonding chamber (103) increases due to the buffer gas, the point in time when the spacer is removed, the point in time when power is applied, the point in time when the temperature increases, and the point in time when voltage is applied may follow in order.

[0098] Immediately after increasing to the second bonding temperature, the pressure can be reduced to the third bonding pressure by blocking the inflow of purge gas at the second bonding pressure. That is, the pressure of the bonding chamber (103) by the buffer gas may further include a step of decreasing again.

[0099] Once the anodic bonding process is completed, a cooling process can be performed. To this end, the temperature of the lower substrate (10) and the upper substrate (15) can be cooled to a third bonding temperature (room temperature). At the same time, the pressure can be increased from the third bonding pressure to a fourth bonding pressure at the level of atmospheric pressure. Additionally, the applied voltage can be removed. Furthermore, after cooling to the third bonding temperature (room temperature), the force exerted by a piston, etc., can be removed.

[0100] Although the present invention has been illustrated and described with respect to specific preferred embodiments, the present invention is not limited to these embodiments and includes all various forms of embodiments that can be implemented by a person skilled in the art without departing from the technical spirit of the present invention as claimed in the patent claims.

Claims

A step of loading a lower substrate, wherein a lower glass substrate and a semiconductor substrate having a plurality of through holes formed therein, are bonded, onto a chuck of a dispensing chamber; A step of reducing the first pressure of the dispensing chamber to a second pressure and cooling the chuck to reduce the first temperature of the lower substrate to a second temperature; and A step of purging and filling the dispensing chamber with an inert gas at the second temperature so that the pressure becomes a third pressure greater than the second pressure; and A step of dispensing alkali metal droplets into pre-vapor cells corresponding to through holes in the lower substrate; comprising Method for manufacturing a steam cell. In paragraph 1, A step of reducing the pressure of the dispensing chamber at the second temperature to maintain the second pressure, and transferring the chuck, the lower substrate mounted on the chuck, and the upper substrate disposed on the lower substrate to the bonding chamber; A step of sequentially loading the lower substrate and the upper substrate onto the bonding chuck of the bonding chamber in the bonding chamber maintained at a first bonding temperature and a first bonding pressure; and A further step of bonding the upper substrate and the lower substrate, Method for manufacturing a steam cell. In paragraph 2, The step of bonding the upper substrate and the lower substrate is: A step of injecting buffer gas into the bonding chamber to increase the pressure to a second bonding pressure; A step of removing the spacer between the lower substrate and the upper substrate; A step of applying pressure to the lower substrate and the upper substrate; A step of increasing the temperature of the lower substrate and the upper substrate in the bonding chamber to a second bonding temperature; and A method comprising steps of applying a high voltage in stages between the lower substrate and the upper substrate, Method for manufacturing a steam cell. In paragraph 3, The point in time when the pressure of the bonding chamber increases due to the buffer gas, the point in time when the spacer is removed, the point in time when force is applied, the point in time when the temperature increases, and the point in time when voltage is applied follow in sequence. Method for manufacturing a steam cell. In paragraph 3, The pressure of the bonding chamber by the buffer gas further includes a step of being reduced again, Method for manufacturing a steam cell. In paragraph 1, A step of baking the lower substrate, on which the semiconductor substrate including the lower glass substrate and a plurality of through holes is bonded, in a first bake chamber; and The method further comprises the step of baking the upper substrate in a second bake chamber. Method for manufacturing a steam cell. Transfer chamber equipped with a robot arm; A bonding chamber connected to the above transfer chamber; and A dispensing chamber connected to a transfer chamber, comprising a dispenser for dispensing an alkali metal droplet; and The lower substrate includes a lower glass substrate and a semiconductor substrate having a plurality of through holes formed therein, and The lower glass substrate and the semiconductor substrate are joined together to provide a plurality of preliminary vapor cells, and The dispenser dispenses the alkali metal droplets to the plurality of pre-vapor cells of the lower substrate transferred into the dispenser chamber, and The lower substrate containing the alkali metal droplet is combined with the upper substrate covering the preliminary vapor cells and then anodic bonded under pressure within the bonding chamber. Steam cell manufacturing device. In Paragraph 9, A first load lock chamber for housing the lower substrate; and A second load lock chamber for housing the upper substrate, further comprising Steam cell manufacturing device. In paragraph 7 A first baking chamber connected to the transfer chamber; and a second baking chamber connected to the transfer chamber, further comprising The first baking chamber bakes the lower substrate, and the second baking chamber bakes the upper substrate. Steam cell manufacturing device. In paragraph 7 The above dispensing chamber is: A chuck capable of cooling the lower substrate above; A further comprising an alignment and movement unit for alignment and movement Steam cell manufacturing device. In Paragraph 7, The bonding chamber above is: A chuck capable of controlling the temperature of the lower substrate; and Characterized by including a pressurizing part comprising an upper electrode that pressurizes the upper substrate aligned with the lower substrate and applies a high voltage. Steam cell manufacturing device.