Perovskite coating composition, method for manufacturing perovskite thin film, perovskite thin film, and solar cell

Abstract

The present invention relates to a perovskite coating composition, a method for manufacturing a perovskite thin film, a perovskite thin film, and a solar cell, the perovskite coating composition comprising: an organometallic halide compound having a perovskite structure; an alkylamine-alcohol mixed solvent; and an organic additive having a boiling point of 100-300 ℃, wherein the organic additive is included in an amount of 1-30 wt% based on the total weight of the perovskite coating composition.

Description

Perovskite coating composition, method for manufacturing a perovskite thin film, perovskite thin film and solar cell

[0001] The present invention relates to a perovskite coating composition, a method for manufacturing a perovskite thin film, a perovskite thin film, and a solar cell.

[0002]

[0003] Perovskite solar cells are being actively researched worldwide due to their advantages, such as low production costs, simplified process steps, applicability to solution processing, and excellent photoelectric properties. Perovskite solar cells (PSCs) can be fabricated at a lower cost compared to silicon solar cells, and economical production is possible because they primarily utilize solution processing.

[0004] Solution processing methods for large-area fabrication include slot dies, slit dies, doctor blades, and inkjet coating, through which perovskite thin films can be formed.

[0005] When preparing perovskite solutions, solutes such as MAPbI3 and FAPbI3 are primarily used, and polar aprotic solvents that dissolve the solutes well are mainly used. Forming a perovskite thin film, which serves as a light-absorbing layer, using this solution is a core process of solar cells. Although no solution remains once crystallization is complete and the thin film is formed, the solution preparation process is essential.

[0006] Currently, various institutions and companies are researching various reagents, composition ratios, and additives, but there are no commercially available products as clear standards or a market have not yet been established.

[0007]

[0008] The object of the present invention is to provide a perovskite coating composition that does not contain an antisolvent.

[0009] In addition, the objective of the present invention is to provide a method for manufacturing a perovskite thin film using the perovskite coating composition.

[0010] In addition, the object of the present invention is to provide a thin film formed from the perovskite coating composition.

[0011] In addition, the object of the present invention is to provide a solar cell comprising the perovskite thin film.

[0012]

[0013] The problems that the present invention aims to solve are not limited to the problem(s) mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below.

[0014]

[0015] To achieve the above objective, the present invention provides a perovskite coating composition comprising: an organometal halide compound having a perovskite structure; an alkylamine-alcohol mixed solvent; and an organic additive having a boiling point of 100°C or higher and 300°C or lower, wherein the organic additive is included in an amount of 1 to 30% by weight based on the total weight of the perovskite composition.

[0016] The above perovskite coating composition may further include nitrile-based additives.

[0017] The above perovskite coating composition may comprise, based on the total weight of the perovskite coating composition, 30 to 60 weight% of an organometal halide compound having a perovskite structure; 10 to 55 weight% of an alkylamine-alcohol mixed solvent; and 5 to 35 weight% of a nitrile-based additive.

[0018] The above organic additive may include 15 to 30 weight% of a first organic additive having a boiling point of 100 ℃ or higher and 200 ℃ or lower, based on the total weight of the perovskite coating composition; or 1 to 15 weight% of a second organic additive having a boiling point of 200 ℃ or higher and 300 ℃ or lower, based on the total weight of the perovskite coating composition.

[0019] The above organic additive may include at least one selected from the group consisting of butyl acetate, methyl-3-methoxy-propionate, propylene glycol monomethyl ether acetate, propylene glycol methyl ether, 1-methyl-2-pyrrolidone, 1-vinyl-2-pyrrolidone, and combinations thereof.

[0020] The weight ratio of the above mixed solvent and organic additive may be 1:0.01 to 1:1.

[0021] The above organometal halide compound can be represented by the following chemical formula 1.

[0022] [Chemical Formula 1]

[0023] ABX3

[0024] In the above chemical formula 1,

[0025] A is a monovalent organic ammonium ion, and

[0026] B is a monovalent or divalent metal cation, and

[0027] X is a halogen ion.

[0028] The above mixed solvent may be a mixture of alkylamine and alcohol in a weight ratio of 1:1 to 1:5.

[0029] The weight ratio of the above mixed solvent and nitrile-based additive may be 1:0.05 to 1:3.

[0030] The above nitrile-based additive may include at least one selected from the group consisting of acetonitrile, propionitrile, succinonitrile, and combinations thereof.

[0031] The weight ratio of the above organic additive and the above nitrile-based additive may be 1:1 to 1:17.

[0032] The weight ratio of the organometal halide and the organic additive may be 1:0.01 to 1:0.8.

[0033]

[0034] In addition, the present invention provides a method for manufacturing a perovskite thin film comprising the step of manufacturing a perovskite thin film by coating the aforementioned perovskite coating composition on a substrate.

[0035] Based on the total weight of the above perovskite coating composition, the thin film crystallization rate can be controlled to 20 to 120 (seconds) by including 1 to 30 weight% of an organic additive.

[0036]

[0037] In addition, the present invention provides a perovskite thin film having a surface defect of 3% or less, wherein the surface defect is calculated from the following Equation 1.

[0038] [Equation 1]

[0039] (Area with defects / Total thin film area) x 100

[0040] The above perovskite thin film may have a surface roughness (Ra, Roughness Average) of 50 to 120 nm.

[0041] The area of ​​the above perovskite thin film is 100 cm² 2 It could be more than that.

[0042] The above perovskite thin film can be formed from the aforementioned perovskite coating composition.

[0043]

[0044] In addition, a solar cell comprising the aforementioned perovskite thin film is provided.

[0045]

[0046] Since the present invention does not include an antisolvent in the perovskite coating composition, it is advantageous for large-area coating, which allows for reduced manufacturing costs and shortened manufacturing time, thereby enabling economical mass production.

[0047] In addition, the present invention can effectively control the crystallization rate, thereby increasing process stability and enabling the formation of uniform, high-quality perovskite thin films, which can improve the performance and reliability of solar cells.

[0048]

[0049] The effects of the present invention are not limited to the effects described above, and should be understood to include all effects that can be inferred from the configuration of the invention described in the detailed description of the invention or the claims.

[0050]

[0051] The present invention is capable of various modifications and may take various forms, and specific embodiments are to be described in detail in the text. However, this is not intended to limit the invention to the specific disclosed forms, and it should be understood that the invention includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.

[0052] In the present invention, terms such as "comprising" or "having" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not excluding in advance the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0053] In this invention, unless otherwise defined, technical terms, scientific terms, and abbreviations used have the meanings commonly understood by those skilled in the art to which this invention pertains. Furthermore, repetitive descriptions of technical configurations and operations identical to those of the prior art are to be omitted.

[0054]

[0055] The present invention will be described in detail below.

[0056] In one embodiment of the present invention, a perovskite coating composition is provided comprising: an organometal halide compound having a perovskite structure; an alkylamine-alcohol mixed solvent; and an organic additive having a boiling point of 100 °C or higher and 300 °C or lower.

[0057] When a perovskite thin film is prepared using an organometal halide compound having the above perovskite structure, it has the effect of excellent photoelectric conversion efficiency.

[0058] In one embodiment, the organometal halide compound may be represented by the following chemical formula 1.

[0059] [Chemical Formula 1]

[0060] ABX3

[0061] In the above chemical formula 1,

[0062] A is a monovalent organic ammonium ion, B is a monovalent or divalent metal cation, and X is a halogen ion.

[0063] In one embodiment, the organic ammonium may be an organic ammonium cation or an amidinium group organic ion.

[0064] In one embodiment, the amidinium-based organic ion is formamidinium (CH(NH2)2), guanidinium (C(NH2)3), acetamidinium ((CH3)C(NH2)2), (C n F 2n+1 )(C(NH2)2), a combination of these, or derivatives.

[0065] In one embodiment, the organic ammonium cation is CH3NH3, (C n H 2n+1 ) x NH 4-x , ((C n H 2n+1 ) y NH 3-y )(CH2) m NH3, (C n F 2n+1 ) x NH 4-x , ((C n F 2n+1 ) y NH 3-y )(CH2) m NH3 (n is an integer from 1 to 100, x is an integer from 1 to 3, y is an integer from 1 to 2), a combination or derivative thereof.

[0066] In one embodiment, the monovalent metal cation is Cs + , Li + , Na + , K + , Rb + , Fr + and can be selected from a group consisting of combinations thereof.

[0067] In one embodiment, the divalent metal cation is Cu 2+ , Ni 2+ , Co 2+ , Fe 2+ , Mn 2+ , Cr2+ , Pd 2+ , Cd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ and can be selected from a group consisting of combinations thereof.

[0068] In one embodiment, the halogen ion may be selected from the group consisting of Cl-, Br-, I- and combinations thereof.

[0069] In one embodiment, the organometal halide compound may be MAPbI3 or FAPbI3, but is not limited thereto.

[0070] In one embodiment, the organometal halide compound may be 30 to 60 wt%, 35 to 60 wt%, 40 to 60 wt%, 30 to 55 wt%, 35 to 55 wt%, 40 to 55 wt%, or 40 to 50 wt% based on the total weight of the perovskite coating composition. When a perovskite thin film is prepared by including the organometal halide compound in the above numerical range, it has the effect of excellent photoelectric conversion efficiency.

[0071] In one embodiment, the alkylamine-alcohol mixed solvent can be used as a main solvent for dissolving an organometal halide compound having a perovskite structure.

[0072] The above alkylamine-alcohol mixed solvent may mean that the alcohol contains alkylamine.

[0073] In one embodiment, using an alcohol containing an alkylamine changes the shape of an organometal halide compound having a perovskite structure in a solvent, and this can have a liquid form.

[0074] For example, if solid MAPbI3 is added to ethanol containing methylamine gas, the solid MAPbI3 changes its form into methylamine-modified MAPbI3 (MA_MAPbI3) and can exist in a liquid state.

[0075] At this time, since ethanol is a solvent that does not dissolve MAPbI3, if methylamine is re-vaporized from MA_MAPbI3 (heat treatment at 100°C is performed, at which time residual ethanol also evaporates), MAPbI3 is rapidly formed and the crystal growth of the desired perovskite thin film can be achieved.

[0076] That is, depending on the partial pressure of the alkylamine gas, the organometal halide compound may be capable of reversibly undergoing a solid-liquid phase change.

[0077] In one embodiment, the alkylamine may be selected from the group consisting of methylamine, n-butylamine, iso-butylamine, tert-butylamine, iso-propylamine, n-propylamine, dimethylamine, and combinations thereof, but is not limited thereto.

[0078] The above alcohol may be either methanol or ethanol, but is not limited thereto.

[0079] In one embodiment, the alkylamine-alcohol mixed solvent may be 10 to 55 wt%, 10 to 50 wt%, 10 to 45 wt%, 12 to 55 wt%, 12 to 50 wt%, 12 to 45 wt%, 15 to 55 wt%, 15 to 50 wt%, 15 to 40 wt%, 24 to 40 wt%, or 35 to 45 wt% based on the total weight of the perovskite coating composition. When the mixed solvent is included within the above numerical range, the organometal halide compound can be easily dissolved, and the solution process can be facilitated when applied to a process through the dissolved solution.

[0080] In one embodiment, the mixed solvent may be composed of an alkylamine and an alcohol in a weight ratio of 1:1 to 1:5. When the mixed solvent is composed of an alkylamine and an alcohol within the above numerical range, the organometal halide compound can be dissolved without precipitation. Additionally, crystal growth can be uniformly achieved during perovskite thin film coating.

[0081] In one embodiment, an organic additive having a boiling point of 100°C or higher and 300°C or lower may be added to dissolve the organometal halide compound and to control the crystallization rate during coating.

[0082] In one embodiment, the organic additive may comprise at least one selected from the group consisting of butyl acetate, methyl-3-methoxy-propionate, propylene glycol monomethyl ether acetate, propylene glycol methyl ether, 1-methyl-2-pyrrolidone, 1-vinyl-2-pyrrolidone, and combinations thereof.

[0083] In one embodiment, the organic additive may be 1 to 30 wt%, 1 to 28 wt%, 1 to 25 wt%, 1 to 20 wt%, 1 to 17 wt%, 1 to 14 wt%, 1 to 10 wt%, 1 to 8 wt%, 2 to 30 wt%, 2 to 28 wt%, 2 to 25 wt%, 2 to 20 wt%, 2 to 17 wt%, 2 to 14 wt%, 2 to 10 wt%, 2 to 8 wt%, or 2 to 5 wt% based on the total weight of the composition. When the organic additive is included in the above numerical range, the organometal halide compound can be dissolved at an appropriate rate and crystallinity can be delayed.

[0084] In one embodiment, depending on the type, 15 to 30 weight percent of a first organic additive having a boiling point of 100 ℃ or higher and 200 ℃ or lower may be used, or 1 to 15 weight percent of a second organic additive having a boiling point of 200 ℃ or higher and 300 ℃ or lower may be used.

[0085] In one embodiment, the first organic additive may be used in an amount of 15 to 30 weight%, or 15 to 25 weight%, or 15 to 20 weight% based on the total weight of the perovskite coating composition. When the first organic additive is included in the above numerical range, the organometal halide compound can be dissolved at an appropriate rate and crystallinity can be delayed.

[0086] In one embodiment, the second organic additive may be 1 to 15 weight%, 1 to 14 weight%, 1 to 10 weight%, 1 to 8 weight%, 2 to 14 weight%, 2 to 10 weight%, 2 to 8 weight%, or 2 to 5 weight% based on the total weight of the perovskite coating composition. When the second organic additive is included in the above numerical range, the organometal halide compound can be dissolved at an appropriate rate and crystallinity can be delayed.

[0087] In one embodiment, the weight ratio of the mixed solvent and the organic additive may be 1:0.01 to 1:1, or 1:0.03 to 1:0.2. Mixing the mixed solvent and the organic additive within the above numerical range can delay the crystallinity of the organometal halide compound, which may be advantageous for large-area coating.

[0088] In one embodiment, the weight ratio of the organometal halide and the organic additive may be 1:0.01 to 1:0.8 or 1:0.03 to 1:0.2. Mixing the organometal halide and the organic additive within the above numerical range can delay the crystallinity of the organometal halide compound, which may be advantageous for large-area coating.

[0089] In one embodiment, the perovskite coating composition may further include a nitrile-based additive to improve the coating properties of the perovskite thin film.

[0090] In one embodiment, the nitrile-based additive may include at least one selected from the group consisting of acetonitrile, propionitrile, succinonitrile, and combinations thereof.

[0091] In one embodiment, the nitrile-based additive may be 5 to 35 wt%, 5 to 32 wt%, 5 to 30 wt%, 5 to 27 wt%, 5 to 25 wt%, 7 to 35 wt%, 7 to 32 wt%, 7 to 30 wt%, 7 to 27 wt%, 7 to 25 wt%, 10 to 35 wt%, 10 to 32 wt%, 10 to 30 wt%, 10 to 27 wt%, 10 to 25 wt%, or 7 wt% to 12 wt% based on the total weight of the perovskite coating composition. When the nitrile-based additive is included within the above numerical range, the coating properties of the perovskite thin film are improved, and thin film cracking and interfacial stability can be secured.

[0092] In one embodiment, the weight ratio of the mixed solvent and the nitrile-based additive may be 1:0.05 to 1:3, 1:0.05 to 1:2, or 1:0.03 to 1:0.3. When the mixed solvent and the nitrile-based additive are mixed within the above numerical ranges, the coating properties of the perovskite thin film are improved, and thin film cracking and interfacial stability can be secured.

[0093] In one embodiment, the weight ratio of the organic additive and the nitrile-based additive may be 1:1 to 1:17, 1:1 to 1:12, 1:1 to 1:10, or 1:1 to 1:5. When the organic additive and the nitrile-based additive are mixed within the above numerical ranges, the coating properties of the perovskite thin film are improved, and thin film cracking and interfacial stability can be secured.

[0094]

[0095] In one embodiment of the present invention, a method for manufacturing a perovskite thin film is provided, comprising the step of manufacturing a perovskite thin film by coating the aforementioned perovskite coating composition on a substrate.

[0096] The above perovskite coating composition is as described above, and redundant details will not be explained again.

[0097] In one embodiment, based on the total weight of the perovskite coating composition, 1 to 30 weight percent of an organic additive can be included to control the thin film crystallization rate to 20 to 120 seconds or 30 to 100 seconds, which may be advantageous for large-area coating.

[0098] In one embodiment, the method for manufacturing the perovskite thin film can manufacture a large-area perovskite thin film without performing a separate heat treatment.

[0099] In the present invention, the perovskite thin film can be used as a light-absorbing layer of a perovskite solar cell.

[0100] In one embodiment, the coating may be performed by a coating selected from the group consisting of spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, nozzle printing, slot die coating, doctor blade coating, screen printing, dip coating, gravure printing, reverse off-screen printing, physical transfer, spray coating, chemical vapor deposition, thermal evaporation, vacuum deposition, and combinations thereof, but is not limited thereto.

[0101]

[0102] In one embodiment of the present invention, a perovskite thin film comprising the aforementioned perovskite coating composition and having a surface defect of 3% or less is provided.

[0103] The surface defects of the thin film may be 3% or less or 1% or less of the total area of ​​the thin film, and the surface defects can be calculated from the following Equation 1.

[0104] [Equation 1]

[0105] (Area with defects / Total thin film area) x 100

[0106] In one embodiment, the thin film may have a surface roughness (Ra, Roughness Average) of 50 to 120 nm, specifically 50 to 100 nm.

[0107] In one embodiment, the area of ​​the perovskite thin film is 100 cm² 2 It could be more than that.

[0108]

[0109] In one embodiment of the present invention, a solar cell comprising the aforementioned perovskite thin film is provided.

[0110]

[0111] The above description explains the technical concept of the present invention using one embodiment, and those skilled in the art to which the present invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the present invention. Accordingly, the embodiments described in this invention are intended to explain, not limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by such embodiments. The scope of protection of the present invention shall be interpreted by the claims, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present invention.

[0112]

[0113] <Synthetic Example: Preparation of Organometal Halide Compounds>

[0114] MAPbI3 was synthesized by dissolving starting materials MAI 33 mmol and PbI233 mmol (1:1 molar ratio) in 27 ml of γ-Butyrolactone (GBL), adding 14 ml of acetonitrile (ACN), growing crystals, and filtering.

[0115]

[0116] <Examples and Comparative Examples: Perovskite Coating Composition and Thin Film Preparation>

[0117] A coating solution was prepared by using MAPbI3 prepared in the above synthesis example, ethanol containing methylamine gas, acetonitrile (ACN), and N-methyl-2-pyrrolidone (NMP) in the amounts (g) shown in Table 1 below, and stirring until the solute dissolved under conditions without heating (i.e., at room temperature).

[0118] A perovskite thin film was prepared by bar coating and spin coating the above coating solution under a fume hood.

[0119]

[0120] MAPbI3 methylamine gas acetonitrile N-methyl-2-pyrrolidone Example 1 31.7 51.5 13.4 3.5 Example 2 48.1 39.1 10.2 2.7 Example 3 58.2 31.5 8.2 2.1 Example 4 48.7 39.6 10.3 1.3 Example 5 46.8 38.1 9.9 5.2 Example 6 46.2 37.6 9.8 6.4 Example 747.716.033.72.6 Example 847.824.325.32.6 Example 948.244.15.12.7 Example 1043.735.518.42.4 Example 1140.032.525.32.2 Example 1236.930.031.12.0 Comparative Example 144.554.30.90. 3 Comparative Example 2 48.79.9 41.10.3 Comparative Example 3 24.6 72.13.10.1 Comparative Example 4 66.0 32.2 1.4 0.5 Comparative Example 5 58.78.0 33.10.3 Comparative Example 6 29.0 69.3 1.5 0.2 Comparative Example 7 49.4 49.2 1.0 0.3 Comparative Example 8 32.2 32.10.7 35.0 Comparative Example 9 49.340.110.40.2 Comparative Example 1034.72.534.128.8 Comparative Example 1124.772.92.30.1 Comparative Example 1232.231.81.035.0 Comparative Example 1358.78.033.10.3 Comparative Example 1438.811.849.20.2 Comparative Example 1534.87.129.428.8

[0121]

[0122] <Experimental Example>

[0123] The coating properties, crystallization rate, surface roughness, surface defects, and average thickness of the perovskite thin films prepared in the above examples and comparative examples were measured and are shown in Table 2 below.

[0124]

[0125] - Coating Performance Evaluation: Coating performance was measured by visually inspecting for the presence of defects such as pinholes. The standard for excellent coating performance was confirmed by ensuring that both the coated and light-receiving sections had minimal pinholes and a degree of uniformity.

[0126] Excellent: Coated perovskite thin film area / Substrate area x 100 is 95 or greater

[0127] Excellent: Coated perovskite thin film area / Substrate area x 100 is 90 or greater

[0128] Typically: Perovskite thin film area / Substrate area x 100 is 80 or more

[0129] Inferior: Perovskite thin film area / Substrate area x 100 is less than 50

[0130]

[0131] - Evaluation of crystallization rate: The crystallization rate was evaluated using bar coating and spin coating, and was measured based on the time taken to crystallize by bar coating with a 10 μm wire bar.

[0132]

[0133] - Surface roughness evaluation: Surface roughness was measured using Alpha step Thickness Analysis, measuring 6 mm from the center to the edge of the coating area at a speed of 400 μm per second. As a result of the measurement, the thickness variation of the thin film and the calculated value of the average roughness Ra (Roughness Average) were obtained and presented.

[0134]

[0135] - Surface defect evaluation: The surface defect measurement method involves measuring an area of ​​60 mm² using an optical microscope. 2 A surface defect was selected, and surface defects such as cracks, voids, and impurities in the corresponding area were classified and displayed based on brightness and color elements in the image. The area of ​​the displayed surface defects was calculated and presented as an area fraction relative to the analysis area.

[0136]

[0137] - Average thickness: The thickness was measured using a scanning electron microscope (SEM).

[0138]

[0139] - Final Evaluation:

[0140] Best: A thin film having the best coating properties, a crystallization rate of 40 seconds or more and 60 seconds or less, a surface roughness of 50 to 80 nm, surface defects within 1%, and an average thickness of 700 to 1000 nm.

[0141] Excellent: A thin film having excellent coating properties, a crystallization rate of 30 seconds or more and 70 seconds or less, a surface roughness of 50 to 100 nm, surface defects within 2.5%, and an average thickness of 400 to 800 nm.

[0142] Excellent: A thin film having coating properties of average or better, a crystallization rate of 20 seconds or more and 80 seconds or less, a surface roughness of 80 to 150 nm, surface defects within 3%, and an average thickness of 300 to 1500 nm.

[0143] Normal: A thin film with normal coating properties, a crystallization rate of 10 seconds or more and 120 seconds or less, and surface defects within 3%.

[0144] Inferior: A thin film with average coating properties, a crystallization rate of 10 seconds or more and 150 seconds or less, and surface defects within 5%.

[0145] Very poor: Thin film with coating properties below average, crystallization rate and surface roughness at unmeasurable levels, surface defects exceeding 5%, and average thickness unmeasurable.

[0146]

[0147] Coating properties Crystallization rate (second) Surface roughness, Ra roughness (nm) Surface defects (defect area / analysis area) (%) Average thickness (nm) Final Evaluation Example 1 Excellent 40 58 0.73% 600 Very Excellent Example 2 Best 50 600 0.98% 900 Best Example 3 Excellent 70 150 1.75% 1500 Excellent Example 4 Excellent 30 58 2.20% 700 Very Excellent Example 5 Average 80 1500 0.98% 800 Excellent Example 6 Average 1203 000.98% 700 Average Example 7 Excellent 50 800.98% 450 Very Excellent Example 8 Very Excellent 50 700.98% 550 Very Excellent Example 9 Very Excellent 50 1200.98% 1200 Excellent Example 10 Excellent 30 1000.98% 800 Very Excellent Example 11 Excellent 27 700.98% 500 Excellent Example 12 Excellent 25 800.98% 300 Excellent Comparative Example 1 Average 70 150 4.00% 1200 Inferior Comparison Example 2 Average 1070 3.30% 550 Inferior Comparison Example 3 Average 10100 4.00% 300 Inferior Comparison Example 4 Inferior 801 203.40% 2000 Inferior Comparison Example 5 Inferior 801 203.00% 1200 Inferior Comparison Example 6 Average 301 202.30% 500 Inferior Comparison Example 7 Average 501 503.60% 900 Inferior Comparison Example 8 Inferior -- 6.50% - Very Inferior Comparison Example 9 Average 50 50 3.00% 900 Inferior Comparison Example 10 Inferior 100 130 3.00% 1500 Inferior Comparison Example 11 Average 10 120 4.50% 350 Inferior Comparison Example 12 Inferior -- 5.98% - Very Inferior Comparison Example 13 Inferior 90 100 4.30% 1500 Inferior Comparison Example 14 Inferior 50 60 2.50% 300 Inferior Comparison Example 15 Average 140 350 1.50% 800 Inferior

[0148]

[0149] Referring to Table 2 above, it was confirmed that when a perovskite thin film is prepared using the perovskite coating compositions prepared in Examples 1 to 12, the coating properties, surface roughness, and surface defect characteristics of the thin film are excellent. In particular, it was confirmed that the coating properties, surface roughness, and surface defect characteristics of the thin film are the best in Example 2, which satisfies the content of organic additives included in the perovskite coating composition being 2 to 5 wt%, alkylamine-alcohol mixed solvent being 35 to 45 wt%, organometal halide compound being 40 to 50 wt%, and nitrile-based additive being 7 to 12 wt%. On the other hand, it was confirmed that the coating properties, surface roughness, and surface defect characteristics of the thin film are inferior in Comparative Examples 1 to 15, in which the content of each component of the perovskite coating composition does not satisfy the aforementioned ranges.

[0150]

[0151] Although the present invention has been described above with reference to examples and manufacturing examples, the present invention is not limited by the examples disclosed in this specification, and it is obvious that various modifications can be made by a person skilled in the art within the scope of the technical concept of the present invention. Furthermore, even if the effects of the configuration of the present invention were not explicitly described while explaining the embodiments of the present invention above, it is natural to acknowledge that the effects predictable by said configuration should also be recognized.

Claims

1. Organometal halide compound having a perovskite structure; Alkylamine-alcohol mixed solvent; and It includes an organic additive having a boiling point of 100 ℃ or higher and 300 ℃ or lower; and A perovskite coating composition comprising 1 to 30 weight percent of the above organic additive based on the total weight of the perovskite coating composition.

2. In Paragraph 1, A perovskite coating composition further comprising a nitrile-based additive.

3. In Paragraph 2, Based on the total weight of the perovskite coating composition, 30 to 60 weight% of an organometal halide compound having a perovskite structure; 10 to 55 weight% of an alkylamine-alcohol mixed solvent; and A perovskite coating composition comprising 5 to 35 weight% of a nitrile-based additive.

4. In Paragraph 1, The above organic additive comprises 15 to 30 weight% of a first organic additive having a boiling point of 100°C or higher and 200°C or lower, based on the total weight of the perovskite coating composition; or A perovskite coating composition comprising 1 to 15 weight% based on the total weight of the perovskite coating composition, wherein the second organic additive has a boiling point of 200 ℃ or higher and 300 ℃ or lower.

5. In Paragraph 1, A perovskite coating composition comprising at least one selected from the group consisting of butyl acetate, methyl-3-methoxy-propionate, propylene glycol monomethyl ether acetate, propylene glycol methyl ether, 1-methyl-2-pyrrolidone, 1-vinyl-2-pyrrolidone, and combinations thereof, wherein the above organic additive comprises butyl acetate, methyl-3-methoxy-propionate, propylene glycol monomethyl ether acetate, propylene glycol methyl ether, propylene glycol methyl ether, 1-methyl-2-pyrrolidone, 1-vinyl-2-pyrrolidone, and combinations thereof.

6. In Paragraph 1, A perovskite coating composition in which the weight ratio of the above mixed solvent and organic additive is 1:0.01 to 1:

1.

7. In Paragraph 1, The above organometal halide compound is a perovskite coating composition represented by the following chemical formula 1: [Chemical Formula 1] ABX3 In the above chemical formula 1, A is a monovalent organic ammonium ion, and B is a monovalent or divalent metal cation, and X is a halogen ion.

8. In Paragraph 1, The above mixed solvent is a perovskite coating composition in which alkylamine and alcohol are mixed in a weight ratio of 1:1 to 1:

5.

9. In Paragraph 2, A perovskite coating composition in which the weight ratio of the above mixed solvent and nitrile-based additive is 1:0.05 to 1:

3.

10. In Paragraph 2, A perovskite coating composition comprising at least one nitrile-based additive selected from the group consisting of acetonitrile, propionitrile, succinonitrile, and combinations thereof.

11. In Paragraph 2, A perovskite coating composition in which the weight ratio of the organic additive and the nitrile-based additive is 1:1 to 1:

17.

12. In Paragraph 1, A perovskite coating composition in which the weight ratio of the organometal halide and the organic additive is 1:0.01 to 1:0.

8.

13. A method for manufacturing a perovskite thin film comprising the step of coating a perovskite coating composition according to claim 1 onto a substrate to manufacture a perovskite thin film.

14. In Paragraph 13, A method for manufacturing a perovskite thin film, comprising 1 to 30 weight percent of an organic additive based on the total weight of the perovskite coating composition, and controlling the thin film crystallization rate to 20 to 120 (seconds).

15. A perovskite thin film having a surface defect of 3% or less, wherein the surface defect is calculated from the following Equation 1: [Equation 1] (Area with defects / Total thin film area) x 100 16. In Paragraph 15, The above perovskite thin film is a thin film having a surface roughness (Ra, Roughness Average) of 50 to 120 nm.

17. In Paragraph 15, The area of ​​the above perovskite thin film is 100 cm² 2 Lee Sang-in, perovskite thin film.

18. A solar cell comprising a perovskite thin film according to paragraph 15.