Magnetic probe for RF plasma monitoring and associated method

Abstract

A device for monitoring a plasma in a process chamber includes a first portion coupled to a second portion. The first portion includes a magnetic probe at least partially formed from a cable extending along a length. The cable includes an inner conductor, an outer conductor surrounding the inner conductor, an outer sheath surrounding the outer conductor, and a gap defined at a position along the length. The second portion is coupled to the first portion and positioned outside the process chamber. The second portion includes a connection to one or more additional components. The inner conductor is electrically connected to the outer conductor at the gap and the gap defines a break in the outer sheath.

Description

PATENTAttorney Docket No. 3222618WO01MAGNETIC PROBE FOR RF PLASMA MONITORING AND ASSOCIATED METHOD CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application claims priority to, and the benefit of, U.S. Provisional Patent Application Serial No. 63 / 760,385, filed on February 19, 2025. The entire contents of said application are incorporated herein by reference.TECHNOLOGICAL FIELD

[0002] The following disclosure relates generally to the field of manufacturing and more specifically to manufacturing industries that use radio frequency (RF) plasma as part of a manufacturing process. The following disclosure is further related to methods, systems and devices used to monitor an RF plasma.BACKGROUND

[0003] Plasma is a state of matter formed when a gas is energized by an external energy source, which frees electrons from atoms or molecules and creates a mixture of ions and electrons that acts as a conductive medium. In certain methods / processes of manufacturing, such as semiconductor manufacturing, plasma enables highly precise and controlled processes such as etching, deposition, and cleaning at the nanometer scale. Such high precision is essential for creating intricate patterns and structures on semiconductor wafers, which are required for producing advanced integrated circuits with extremely small features used in modem electronics.

[0004] Measuring and controlling properties of the plasma are vital steps during such manufacturing processes. One of the properties of the plasma that is desired to be monitored is the magnetic field of the plasma. Monitoring the magnetic field of the plasma can provide information about the plasma density, electron temperature, and the behavior of charged particles. In semiconductor manufacturing, the magnetic field may be used to direct and accelerate ions towards the wafer surface, enhancing the etching rate and improving the quality of deposited films. Accordingly, monitoring the magnetic field of the plasma enables adjustments to be made to the process settings in order to maintain the desired electromagnetic field of the plasma.

[0005] Current systems, devices and associated methods used to monitor the50132224.1PATENT3222618 WOOlmagnetic field of a plasma source, such as an RF plasma, suffer from unwanted inductive coupling, excessive electromagnetic noise or interference, and a limited range of operating frequencies. In addition, the current devices used to monitor the magnetic field of a plasma source require multiple components, such as two or more baluns to interface balanced and unbalanced conductors, which results in a larger overall device footprint and an increased part count. These are just some of the problems associated with current systems, devices and associated methods used to monitor the magnetic field of a plasma source.SUMMARY OF INVENTION

[0006] Aspects of the disclosure are directed to embodiments of a device for monitoring a plasma in a process chamber. In some embodiments, the device includes a first portion including a magnetic probe at least partially formed from a cable extending along a length. In some embodiments, the cable includes an inner conductor, an outer conductor surrounding the inner conductor, an outer sheath surrounding the outer conductor, and a gap defined at a position along the length. In some embodiments, a second portion is coupled to the first portion and is positioned outside the process chamber. In some embodiments, the second portion includes a connection to one or more additional components. In some embodiments, the inner conductor is electrically connected to the outer conductor at the gap. In some embodiments, the gap defines a break in the outer sheath.

[0007] In some embodiments of the device, the first portion is positioned inside of the process chamber. In some embodiments of the device, the process chamber includes a viewport positioned between the first portion and the plasma. In some embodiments, the device further includes at least one support member structured to support the first portion. In some embodiments of the device, the first portion includes a split loop shape with a first branch and a second branch that are separated by the gap. In some embodiments of the device, the first portion includes a twisted shape with a first branch and a second branch that are separated by the gap. In some embodiments of the device, at least one of the first branch or the second branch includes a hyperbolic paraboloid shape. In some embodiments of the device, the gap is positioned at the midpoint of the length of the cable.

[0008] Aspects of the disclosure are directed to embodiments of a system for 250132224.1PATENT3222618 WOOlmonitoring a plasma in a process chamber including a plasma monitoring device and one or more components electrically coupled to plasma monitoring device. In some embodiments, the plasma monitoring device includes a first portion at least partially formed from a cable extending along a length, wherein the cable comprises, an inner conductor, an outer conductor surrounding the inner conductor, an outer sheath surrounding the outer conductor, and a gap defined at a position along the length. In some embodiments, the plasma monitoring device includes a second portion coupled to the first portion and positioned outside the process chamber. In some embodiments, the one or more components are electrically coupled to the second portion and are configured to measure signals received from the first portion of the plasma monitoring device pertaining to a property of the plasma. In some embodiments, the inner conductor is electrically connected to the outer conductor at the gap and the gap defines a break in the outer sheath.

[0009] In some embodiments of the system, the first portion is positioned inside of the process chamber. In some embodiments of the system, the process chamber includes a viewport positioned between the first portion and the plasma. In some embodiments, the system further includes at least one support member structured to support the first portion. In some embodiments of the system, the one or more components include at least one of a measurement device and a differential phase splitter. In some embodiments of the system, the second portion of the plasma monitoring device and the one or more components are positioned outside of the process chamber. In some embodiments of the system, the property of the plasma is an intensity of an electromagnetic field generated by the plasma.

[0010] Aspects of the disclosure are directed to embodiments of a method for monitoring a plasma in a process chamber. In some embodiments, the method includes structuring a plasma monitoring device to include a first portion at least partially formed from a cable extending along a length and a second portion coupled to the first portion. In some embodiments, the cable includes an inner conductor, an outer conductor surrounding the inner conductor, an outer sheath surrounding the outer conductor, and a gap defined at a position along the length. In some embodiments, the method includes positioning the second portion outside of the process chamber and electrically coupling the second portion to a measuring device. In some embodiments, the method includes generating a plurality of signals by the first portion of the plasma monitoring device, wherein each of the plurality of signals pertains to a detected property of the plasma. In some embodiments, the method includes transmitting the plurality of signals to the measuring 350132224.1PATENT3222618 WOOldevice via the second portion of the plasma monitoring device and determining a magnitude of the property of the plasma based on the plurality of signals.

[0011] In some embodiments, the method further includes outputting the magnitude of the property of the plasma to a user interface. In some embodiments, the method further includes altering one or more: (i) plasma settings; or (ii) process settings, in response to the magnitude of the property of the plasma. In some embodiments, the method further includes: continuously detecting the property of the plasma and generating signals during operation of the plasma; continuously determining the magnitude of the property of the plasma during operation of the plasma; and continuously altering one or more: (i) plasma settings; or (ii) process settings, in response to the magnitude of the property of the plasma. In some embodiments of the method, the property of the plasma is an intensity of an electromagnetic field generated by the plasma.BRIEF DESCRIPTION OF DRAWINGS

[0012] A more particular description of the invention briefly summarized above may be had by reference to the embodiments, some of which are illustrated in the accompanying drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments. Thus, for further understanding of the nature and objects of the invention, references can be made to the following detailed description.

[0013] Fig. 1A schematically illustrates an embodiment of a plasma monitoring system including an embodiment of a plasma monitoring device at least partially positioned in a process chamber along with a plasma source, according to some embodiments of the present disclosure.

[0014] Fig. IB schematically an embodiment of a plasma monitoring system including an embodiment of a plasma monitoring device positioned outside of a process chamber, according to some embodiments of the present disclosure

[0015] Fig. 2 schematically illustrates a cross-section of an embodiment of a cable of the plasma monitoring, according to some embodiments of the present disclosure.

[0016] Fig. 3 schematically illustrates an embodiment of a plasma monitoring system including an embodiment of a plasma monitoring device, according to some embodiments 450132224.1PATENT3222618 WO01of the present disclosure.

[0017] Fig. 4 schematically illustrates another embodiment of the plasma monitoring device, according to some embodiments of the present disclosure.

[0018] Fig. 5 schematically illustrates another embodiment of the plasma monitoring device, according to some embodiments of the present disclosure.

[0019] Fig. 6 schematically illustrates another embodiment of the plasma monitoring device, according to some embodiments of the present disclosure.

[0020] Fig. 7 schematically illustrates the embodiment of Fig. 6 with a support member, according to some embodiments of the present disclosure.

[0021] Fig. 8 schematically illustrates the embodiment of Fig. 7 with the support member shown as transparent, according to some embodiments of the present disclosure.

[0022] Fig. 9 schematically illustrates another embodiment of the plasma monitoring device, according to some embodiments of the present disclosure.DETAILED DESCRIPTION

[0023] The following discussion relates to various embodiments of a plasma monitoring device. It will be understood that the herein described versions are examples that embody certain inventive concepts as detailed herein. To that end, other variations and modifications will be readily apparent to those of sufficient skill. In addition, certain terms are used throughout this discussion in order to provide a suitable frame of reference with regard to the accompanying drawings. These terms such as “upper”, “lower”, “forward”, “rearward”, “interior”, “exterior”, “front”, “back”, “top”, “bottom”, “inner”, “outer”, “first”, “second”, and the like are not intended to limit these concepts, except where so specifically indicated. The terms “about” or “approximately” as used herein may refer to a range of 80%- 125% of the claimed or disclosed value. With regard to the drawings, their purpose is to depict salient features of the plasma monitoring device and are not specifically provided to scale.

[0024] An embodiment of a process chamber 10 defining a chamber interior 14 with a plasma source or plasma 20 and a real-time plasma monitoring device 100 comprising a magnetic probe 101 configured to monitor the electro-magnetic fields of RF plasmas 20 in realtime is schematically shown in Figs. 1A and IB. In some embodiments, the magnetic probe 101 comprises a Mobius loop magnetic probe for RF plasma monitoring. In other embodiments, the 550132224.1PATENT3222618 WOOlmagnetic probe 101 of the plasma monitoring device 100 may comprise a structure including, but not limited to, a square, an oval, a twisted structure, or one or more loops. In some embodiments, the plasma monitoring device 100 includes a first portion 110 that is configured to be positioned in or near the process chamber 10 and a second portion 120 that is configured to be positioned outside of the process chamber 10. The first portion 110 is positioned as close as possible to the plasma source 20. In some embodiments, a quartz window 12 (or other electrically transparent material) is positioned between the first portion 110 and the plasma source 20. In some embodiments, the quartz window 12 shields the first portion 110 from external interference. In some embodiments, the second portion 120 is coupled to the first portion 110 through the quartz window (or other electrically transparent material). The plasma monitoring device 100 may be part of a plasma monitoring system 200 that includes a plurality of connections 202, 204 between the second portion 120 of the plasma monitoring device 100 and one or more components 250.

[0025] Referring to Figs. 2 and 3, the first portion 110 of an embodiment of the plasma monitoring device 100 comprises a Mobius loop magnetic probe 101. In this embodiment, the magnetic probe 101 is comprised of a wire 102 or cable, such as a coaxial cable. The cable 102 forms a split loop shape 102’ defining a small gap 103 or split. In some embodiments, the gap 103 may span a distance that is as small as is possible to manufacture. In some embodiments, the gap 103 may span a distance less than 4 cm. In some embodiments, the gap 103 may span a distance less than 2 cm. In some embodiments, the gap 103 is located at or near the midpoint of the overall length of the cable 102. In some embodiments, the gap 103 is a portion of the cable 102 with a break in the outer sheath 107 or in other words, where the outer sheath 107 is missing. A schematic cross section of an embodiment of a cable 102 is shown in Fig. 2. As shown, the embodiment of the cable 102 generally includes a center conductor 104, a dielectric 105 at least partially surrounding the center conductor 104, an outer conductor 106 at least partially surrounding the dielectric 105, and an outer sheath 107 at least partially surrounding the outer conductor 106. At the gap 103, the center conductor 104a of a first branch 102a of the split loop 102 ’ is electrically coupled to the outer conductor 106b of the second branch 102b of the split loop 102’. Similarly, at the gap 103 the center conductor 104b of the second branch 102b of the split loop 102’ is electrically coupled to the outer conductor 106a of the first branch 102a of the split loop 102’. This enables the plasma monitoring device 100 to be more compact or otherwise physically shorter while also being electrically longer. This enables a better signal, which equates 650132224.1PATENT3222618 WOOlto better signal to noise.

[0026] The plasma monitoring device 100 creates a balanced electric field that acts to cancel lower frequencies of non-process or outside electromagnetic noise or interference. In addition, the plasma monitoring device 100 provides a balanced output, such that only a single m:n balun is needed to be unbalanced, where m and n may be different or may be the same number. In some embodiments, n and m may be any real number. Moreover, the single-surface topology created by the plasma monitoring device 100 reduces unwanted inductive coupling with external magnetic fields, which improves signal integrity and enhances sensitivity.

[0027] As was previously discussed, the first portion 110 of some embodiments of the plasma monitoring device 100 are circular, however other embodiments of the plasma monitoring device 100 may be any shape that improves the RF characteristics or access to the plasma measurement environment 14 inside of the chamber 10. Accordingly, the magnetic probe 101 of the plasma monitoring device 100 may be comprised of, but not limited to, a square, an oval, or a twisted structure. For example, an embodiment of a plasma measuring device 400 with a magnetic probe 401 comprising an oval (or split oval) 402’ is shown in Fig. 4. Similar to previously discussed embodiments, the oval or split oval 402’ of the plasma monitoring device 400 is comprised of a wire or cable 402 that is an at least partially oval shape and defining a small gap 403 or split. In some embodiments, the gap 403 is located at or near the midpoint of the overall length of the cable 402. At the gap 403, the center conductor 404a of a first branch 402a of the split oval 402 ’ of the plasma monitoring device 400 is electrically coupled to the outer conductor of the second branch 402b of the split oval 402’ of the plasma monitoring device 400. Similarly, at the gap 403 the center conductor 404b of the second branch 402b of the plasma monitoring device 400 is electrically coupled to the outer conductor of the first branch 402a of the plasma monitoring device 400. In some embodiments, the plasma monitoring device 400 may include one or more support members 408. Similar to other embodiments, the plasma monitoring device 400 may comprise a first portion 410 that is configured to be positioned in the process chamber 10 (Figs. 1A and IB) and a second portion 420 that is configured to be positioned outside of the process chamber 10 (Figs. 1A and IB). In some embodiments, the second portion 420 includes one or more connections 422 to one or more components outside of the chamber. In some embodiments, the one or more components are similar to the one or more components 250 previously discussed. In some embodiments, the one or more support members 408 may be 750132224.1PATENT3222618 WOOlpositioned inside and / or outside of the process chamber 10 (Figs. 1A and IB).

[0028] Turning to Fig. 5, an embodiment of the magnetic probe 501 of a plasma monitoring device 500 is comprised of multiple loops 502’, such as in a spiral configuration, is shown. Similar to previously discussed embodiments, loops 502’ of the monitoring device 500 is comprised of a cable 502 that forms a spiral defining a small gap 503 or split. In some embodiments, the gap 503 is located at or near the midpoint of the overall length of the cable 502. At the gap 503, the center conductor 504a of a first branch 502a of the plasma monitoring device 500 is electrically coupled to the outer conductor of the second branch 502b of the plasma monitoring device 500. Similarly, at the gap 503 the center conductor 504b of the second branch 502b is electrically coupled to the outer conductor of the first branch 502a. Similar to other embodiments, the plasma monitoring device 500 may comprise a first portion 510 that is configured to be positioned in or near the process chamber 10 (Figs. 1A and IB) and a second portion 520 that is configured to be positioned outside of the process chamber 10 (Figs. 1A and IB). In some embodiments, the second portion 520 includes one or more connections 522 to one or more components outside of the chamber. In some embodiments, the one or more components are similar to the one or more components 250 previously discussed. In some embodiments, one or more support members (not shown) may be positioned inside and / or outside of the process chamber 10 (Figs. 1A and IB).

[0029] Another embodiment of the magnetic probe 601 of a plasma monitoring device 600 is shown in Figs. 6-8. Similar to previously discussed embodiments, the magnetic probe 101 of the plasma monitoring device 600 is comprised of a cable 602 formed into a structure having a twisted or otherwise bent shape 602’. In an embodiment, the structure of the cable 602 includes a first branch 602a and a second branch 602b that are separated by a small gap 603 or split. In some embodiments, the gap 603 is located at or near the midpoint of the overall length of the cable 602. In some embodiments, the first and second branches 602a, 602b each comprise a hyperbolic paraboloid shape. At the gap 603, the center conductor 604a of a first branch 602a of the plasma monitoring device 600 is electrically coupled to the outer conductor of the second branch 602b of the plasma monitoring device 600. Similarly, at the gap 603 the center conductor 604b of the second branch 602b is electrically coupled to the outer conductor of the first branch 602a. Similar to other embodiments, the plasma monitoring device 600 may comprise a first portion 610 that is configured to be positioned in the process chamber 10 (Figs. 1A and IB) and a 850132224.1PATENT3222618 WOOlsecond portion 620 that is configured to be positioned outside of the process chamber 10 (Figs. 1 A and IB). In some embodiments, the second portion 620 includes one or more connections 622 to one or more components outside of the chamber. In some embodiments, the one or more components are similar to the one or more components 250 previously discussed. In some embodiments, one or more support members (not shown) may be positioned inside and / or outside of the process chamber 10 (Figs. 1 A and IB). In some embodiments, the plasma monitoring device 600 includes one or more support members 608. In some embodiments, the connections between the center conductors 604a, 604b and the outer conductors of the respective cable branches 602b, 602a are at least partially positioned inside of the one or more support members 608.

[0030] Referring to Fig. 9, an embodiment of the plasma monitoring device 900 is shown as part of a circuit on a printed circuit board (PCB). Similar to previously discussed embodiments, the plasma monitoring device 900 includes a magnetic probe 901 that is comprised of a one or more wires 902 or electrical connections. In this embodiment, the wire 902 has an inner or center conductor 904a, 904b and an outer conductor 906a, 906b and forms a split loop shape defining a small gap 903 or split. In some embodiments, the gap 903 is located at or near the center of the overall length of the wire 902. At the gap 903 the center conductor 904a of a first branch 902a of the split loop is electrically coupled to the outer conductor 906b of the second branch 902b of the split loop. Similarly, at the gap 903 the center conductor 904b of the second branch 902b of the split loop is electrically coupled to the outer conductor 906a of the first branch 902a of the split loop. In this embodiment, the PCB substrate may act as a support member for one or more structures of the plasma monitoring device 900.

[0031] As shown specifically in Figs. 1 and 3, in some embodiments, any embodiment of the plasma monitoring device may be part of a plasma monitoring system 200. In the embodiment shown, the plasma monitoring system 200 includes a plurality of connections 202, 204 between the second portion 120 of the plasma monitoring device 100 and one or more components 250. One of the components 250 includes a differential phase splitter (Balun) 230. An advantage of the disclosed embodiments of the plasma monitoring device is that only a single Balun is required. Currently used plasma monitoring systems require multiple Baluns, which increases system complexity, cost, and size. The plasma monitoring system 200 may also include a measurement device 240 that is configured to measure the signals from the plasma monitoring device 100. In some embodiments, the measurement device 240 may be a spectrum analyzer or 950132224.1PATENT3222618 WOOltime domain device that samples the incoming signal at a rate sufficient to detect the changes in the RF field. This is usually in the realm of >5 MSPS for the spectrum analyzer and GSPS for the time domain. In some embodiments, the first portion of the plasma monitoring device 110 obtains signals from the plasma 20 (FIGs. 1 A and IB) and transmits the signals to the measurement device 240 via the second portion 120 of the plasma monitoring device 100. In some embodiments, the measurement device receives signals from the second portion 120 of the plasma monitoring device 100 and measures or interprets them. In some embodiments, the signals generated by the first portion 120 of the plasma monitoring device 100 pertain to a property or characteristic of the plasma (Figs. 1A and IB). In some embodiments, the property or characteristic is an intensity of the plasma’s electromagnetic field. In some embodiments, the plasma monitoring system 200 may include one or more resistive or reactive components such as, inductors, capacitors, and / or ferrite / magnetic materials, to provide fine tuning of the response.

[0032] An embodiment of a method of monitoring a plasma 20 (Figs. 1A and IB) and controlling the plasma 20 (Figs. 1A and IB) is further described. In some embodiments, a property or characteristic of the plasma 20 (Figs. 1A and IB), such as the magnetic field of the plasma (Figs. 1A and IB), is detected with by the plasma monitoring device 100. In some embodiments, the magnetic probe 101 of the first portion 110 of the plasma monitoring device 100 is used to detect the plasma property. In some embodiments, the first portion 110 including the magnetic probe 101 is positioned on an inside 14 of the process chamber 10 (Fig. 1A). In some embodiments, the first portion 110 including the magnetic probe 101 is positioned outside of the process chamber 10 (Fig. IB) and proximate to a viewport 12 of the process chamber 10 such that the viewport 12 is positioned between the first portion 110 and the plasma 20. In some embodiments, the second portion 120 (Figs. 1A and IB) of the plasma monitoring device 100 is positioned outside of the plasma chamber 10.

[0033] In some embodiments, the magnetic probe 101 generates signals corresponding to the detected plasma property and transmits these signal to a measuring device 240. In some embodiments, the measuring device interprets the signals from the first portion 110 of the plasma monitoring device 100 and determines the magnitude of the plasma property. In some embodiments, the magnitude of the plasma property may be output to a user interface and / or may be used to automatically alter one or more process settings including one or more plasma settings. In some embodiments, the magnetic probe 101 continuously detects the plasma property 1050132224.1PATENT3222618 WOOlduring operation of the plasma source. In some embodiments, the one or more process settings and / or one or more plasma settings are continuously automatically altered during operation of the plasma source 20 in response to the detected plasma property.

[0034] While the present invention has been particularly shown and described with reference to certain exemplary embodiments, it will be understood by one skilled in the art that various changes in detail may be effected therein without departing from the spirit and scope of the invention that can be supported by the written description and drawings. Further, where exemplary embodiments are described with reference to a certain number of elements, it will be understood that the exemplary embodiments can be practiced utilizing either less than or more than the certain number of elements.1150132224.1

Claims

PATENT3222618 WOOlCLAIMS1. A device for monitoring a plasma in a process chamber, comprising:a first portion including a magnetic probe at least partially formed from a cable extending along a length, wherein the cable includes,an inner conductor,an outer conductor surrounding the inner conductor,an outer sheath surrounding the outer conductor, anda gap defined at a position along the length; anda second portion coupled to the first portion and positioned outside the process chamber, the second portion including a connection to one or more additional components,wherein the inner conductor is electrically connected to the outer conductor at the gap, andwherein the gap defines a break in the outer sheath.

2. The device according to claim 1 , wherein the first portion is positioned inside of the process chamber.

3. The device according to claim 1 , wherein the process chamber includes a viewport positioned between the first portion and the plasma.

4. The device according to claim 1 , further comprising at least one support member structured to support the first portion.

5. The device according to claim 1 , wherein the first portion comprises a split loop shape with a first branch and a second branch that are separated by the gap.

6. The device according to claim 1 , wherein the first portion comprises a twisted shape with a first branch and a second branch that are separated by the gap.1250132224.1PATENT3222618 WOOl7. The device according to claim 6, wherein at least one of the first branch or the second branch comprise a hyperbolic paraboloid shape.

8. The device according to claim 1 , wherein the gap is positioned at the midpoint of the length of the cable.

9. A system for monitoring a plasma in a process chamber, comprising:a plasma monitoring device comprising,a first portion at least partially formed from a cable extending along a length, wherein the cable comprises,an inner conductor,an outer conductor surrounding the inner conductor,an outer sheath surrounding the outer conductor, anda gap defined at a position along the length; and a second portion coupled to the first portion and positioned outside the process chamber; andone or more components electrically coupled to the second portion and configured to measure signals received from the first portion of the plasma monitoring device pertaining to a property of the plasma,wherein the inner conductor is electrically connected to the outer conductor at the gap, andwherein the gap defines a break in the outer sheath.

10. The system according to claim 9, wherein the first portion is positioned inside of the process chamber.

11. The system according to claim 9, wherein the process chamber includes a viewport positioned between the first portion and the plasma.

12. The system according to claim 9, further comprising at least one support member structured to support the first portion.1350132224.1PATENT3222618 WOOl13. The system according to claim 9, wherein the one or more components include at least one of a measurement device and a differential phase splitter.

14. The system according to claim 9, wherein the second portion of the plasma monitoring device and the one or more components are positioned outside of the process chamber.

15. The system according to claim 9, wherein the property of the plasma is an intensity of an electromagnetic field generated by the plasma.

16. A method for monitoring a plasma in a process chamber, comprising:structuring a plasma monitoring device to include,a first portion at least partially formed from a cable extending along a length, wherein the cable comprises,an inner conductor,an outer conductor surrounding the inner conductor, an outer sheath surrounding the outer conductor, and a gap defined at a position along the length, anda second portion coupled to the first portion,positioning the second portion outside of the process chamber;electrically coupling the second portion to a measuring device;generating a plurality of signals by the first portion of the plasma monitoring device, wherein each of the plurality of signals pertains to a detected property of the plasma;transmitting the plurality of signals to the measuring device via the second portion of the plasma monitoring device; anddetermining a magnitude of the property of the plasma based on the plurality of signals.

17. The method according to claim 16, further comprising outputting the magnitude of the property of the plasma to a user interface.1450132224.1PATENT3222618 WOOl18. The method according to claim 16, further comprising altering one or more: (i) plasma settings; or (ii) process settings, in response to the magnitude of the property of the plasma.

19. The method according to claim 16, further comprising:continuously detecting the property of the plasma and generating signals during operation of the plasma;continuously determining the magnitude of the property of the plasma during operation of the plasma; andcontinuously altering one or more: (i) plasma settings; or (ii) process settings, in response to the magnitude of the property of the plasma.

20. The method according to claim 16, wherein the property of the plasma is an intensity of an electromagnetic field generated by the plasma.1550132224.1

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