30results about How to "Improve SN ratio" patented technology

A photoelectric conversion device comprising: an inorganic photoelectric conversion film; and an organic photoelectric conversion film, wherein an insulating film between the inorganic photoelectric conversion film and the organic photoelectric conversion film has a thickness of from 1 to 6 μm, wherein the organic photoelectric conversion film has a multilayer structure comprising four or more layers, or wherein a protective film having a multilayer structure comprising three or more layers is provided on the organic photoelectric conversion film.

Disclosed herein are a display device and electronic apparatus; wherein the display device includes a first light sensor unit configured to include a light-receiving element and detect intensity of ambient light to a display area; a second light sensor unit configured to include a light-receiving element and be provided with an infrared filter disposed on an optical path to the light-receiving element; and a signal processor configured to execute difference processing for a detection signal of the first light sensor unit and a detection signal of the second light sensor unit, wherein the infrared filter is formed by stacking at least two kinds of color filters.

Provided is a vector control apparatus for an induction motor which is capable of obtaining stable rotation in a short period of time for adjustment even at the time of low-speed operation by increasing the SN ratio of an output voltage to suppress the arithmetic error in the primary angular frequency arithmetic value based on a magnetic flux command value calculated from a circuit constant and an actual measurement of the induction motor even in the case where the rotation velocity of the induction motor is lower. The vector control apparatus includes: magnetic flux command value arithmetic means (11) for selecting and outputting the magnetic flux command value on the basis of a torque command value Tmr that is input from the external, the circuit constant of the induction motor, and the actual measurement related to the induction motor; and vector control means (10) for controlling the inverter device (3) on the basis of the magnetic flux command value that is output from the magnetic flux command value arithmetic means (11) and the circuit constant of the induction motor (8). The magnetic flux command value arithmetic means (11) includes a magnetic flux command value back calculation arithmetic section (21) for calculating a magnetic flux command arithmetic value F2RB so that a voltage that is applied to the induction motor 8 becomes equal to or higher than a setting value corresponding to an unstable area.

The present invention provides a vibration transducer including a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.

The invention provides a vibration transducer. Vibration beams are provided on a substrate in parallel with the substrate and in parallel with each other, and provided in vacuum chambers formed by a shell and the substrate. Each of vibration beams has a sectional shape with a longer sectional thickness in a direction perpendicular to a surface of the substrate than a sectional thickness in a direction parallel to the surface of the substrate. A first electrode plate is provided in parallel with the surface of the substrate and connected to one end of each of the vibration beams. A second electrode plate is provided in parallel with the surface of the substrate and between the vibration beams. Third and fourth electrode plates are provided on opposite sides of the vibration beams. Asperities are provided in opposed side wall portion surfaces of the vibration beams and the second, third and fourth electrode plates,

Disclosed is a quadrupolar mass analysis device provided with direct-current voltage sources (62, 63) having response characteristics wherein the response time of the direct-current voltage is shorter than the time required when an ion having the maximum mass-to-charge ratio among ions introduced to a quadrupolar mass filter (2) passes through the quadrupolar mass filter (2). Main rod electrodes (31-34) and front rod electrodes (41-44) are connected via primary differentiation circuits (65, 66). Thus, in the transient state of voltage variation in association with the changing of mass-to-charge ratios, among ions entering the quadrupolar mass filter (2), ions having a low m / z can be eliminated in a front electrode portion (4), and ions having a high m / z can be eliminated in a main electrode portion (3). Accordingly, a large amount of ions can be prevented from passing through the quadrupolar mass filter (2) and entering an ion detector (5).

An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.

CD voltage applied to a conversion dynode for an ion detector (29) is switched each time a target sample is injected by an injector (12) in an LC unit (1) and mass spectrometry is executed for a target component in the sample. A data acquisition unit (32) acquires noise data during a period in which the component is not present and intensity data for ions originating in the target component for each CD voltage in a plurality of steps, and an SN ratio calculation unit (33) calculates an SN ratio. After execution is completed, an optimal CD voltage determination unit (34) compares the SN ratios for each CD voltage and stores a CD voltage that gives the maximum SN ratio in an optimal CD voltage storage unit (42) as the optimal CD voltage for m / z for the analytic conditions and target of analysis in that instance. Thus, even when the mobile phase flow rate is particularly high or a mobile phase that does not easily volatilize is used, a detection signal with an excellent SN ratio for which the optimal CD voltage is set can be obtained.

A pump (1) including an impeller (11) having blades (111) on its outer periphery and a rotor magnet (112) on its inner periphery, a motor stator (12) placed facing the rotor magnet (112), a pump casing (13) for partitioning between the impeller (11) and the motor stator (12) and having formed in it a recess (133) for receiving the motor stator (12), and an electronic circuit board (15) having mounted on it a drive IC (41) for supplying an electric current to the stator motor (12). The electronic circuit board (15) is placed so that the drive IC (41) mounted on it faces the motor stator (12) and is fixed to the pump casing (13).

A reproduction apparatus includes: a wavelength-tunable light source that outputs light illuminating a hologram recording medium such that a wavelength is variable; an optical system that illuminates through an objective lens the hologram recording medium with the reference light generated on the basis of light emitted from the wavelength-tunable light source and that includes a power changing section which changes a zoom power of the reference light incident on the objective lens; a temperature detecting section that detects a temperature of the hologram recording medium; and a control section that, when setting the zoom power of the reference light and the wavelength of the wavelength-tunable light source in response to a result of the temperature detected by the temperature detecting section, performs control such that the zoom power of the reference light and the wavelength of the wavelength-tunable light source satisfy a condition [ [Delta]m = [Delta] [lambda] / [lambda] W ] .

The present invention provides a technique which enables a high SN ratio to be obtained, and which enables an increase in resistance to input pressure in an electrostatic capacitance type sensor manufactured using a MEMS technique. The electrostatic capacitance type sensor converts a displacement of a diaphragm into a change in an electrostatic capacitance between the diaphragm and a back plate, and is configured in such a way that part of the external shape of the diaphragm is disposed inward of an opening in a base plate, when seen in a normal line direction, and another part of the externalshape of the diaphragm is disposed outward of the opening in the base plate, when seen in the normal line direction.

Disclosed is an MIMO communication method. In a multi-input multi-output MIMO communication system, a method achieving diversity is disclosed. Compared with the number of emitting antennas, the less number of receiving antennas is possessed by the MIMO communication system. In the MIMO communication system, a switch of a receiver antenna is selectively selected by using and based on the signal to noise ratio of signals captured by the receiving antennas. Alternatively, the signals received by the various receiving antennas are combined so as to achieve combined diversity.

An Ar-BID capable of achieving a high level of SN ratio is provided. A dielectric barrier discharge ionization detector includes: a dielectric tube (111), a high-voltage electrode (112), an upstream-side ground electrode (113) and a downstream-side ground electrode (114). Plasma is generated through discharging in a discharging section (110), sample-gas components are ionized by the plasma, ion current is detected, and the dielectric tube (111) is made of a material whose resistivity is 1.0*10<13> [Omega]cm or lower. The upstream-side ground electrode (113) is longer than the beginning distance of creeping discharge between the high-voltage electrode (112) and a tube-line tip member (116) on the upper end of the dielectric tube (111); or the downstream-side ground electrode (114) is longerthan the beginning distance of creeping discharge between the high-voltage electrode (112) and the charge-collecting section, or the above two conditions are satisfied at the same time.

Disclosed herein are a display device and electronic apparatus; wherein the display device includes a first light sensor unit configured to include a light-receiving element and detect intensity of ambient light to a display area; a second light sensor unit configured to include a light-receiving element and be provided with an infrared filter disposed on an optical path to the light-receiving element; and a signal processor configured to execute difference processing for a detection signal of the first light sensor unit and a detection signal of the second light sensor unit, wherein the infrared filter is formed by stacking at least two kinds of color filters.

The invention provides an ultrasonic flue gas flowmeter and a sensor noise abatement device thereof. The noise abatement device comprises a noise abatement device body. The noise abatement device body is cylindrical. A first through hole and a second through hole are formed in the noise abatement device body. The first through hole and the second through hole penetrate through the noise abatement device body in the axial direction of the noise abatement device body. The noise abatement device attenuates complementary energy sent by a sensor. The noise abatement device can select a vibration reduction material and absorb complementary energy of the sensor, so that the SN ratio during measuring is increased. Meanwhile, due to the fact that the second through hole is formed in the noise abatement device, the noise abatement device body is more uniform and stable in structure, the surface area of the noise abatement device is greatly increased due to the through holes, and the sensor complementary energy absorbing capacity is effectively improved. The noise abatement device can be made of high temperature silica gel materials, the vibration reduction effect is better, the corrosion resistance is strong, and the detection device can stably work under high temperature and high humidity for a long time.

To provide a damage detection mechanism capable of detecting damage of a rotary blade with better detection sensitivity and S / N ratio than conventional ones. The damage detection mechanism includes: acontrol unit; a light emitting unit; an emitting side optical fiber; an irradiation range conversion unit; an incident side lens; an incident side optical fiber; and a light receiving unit. The incident side lens is arranged at a position facing the irradiation range conversion unit with a rotary blade interposed therebetween. The light emitting unit outputs inspection light. The emission side optical fiber sends the inspection light to the irradiation range conversion unit. The irradiation range conversion unit emits the inspection light in a state of being narrowed down along a diameter ofthe rotary blade. The incident side lens collects the inspection light emitted through the irradiation range conversion unit and sends it to the incident side optical fiber. The incident side opticalfiber sends the inspection light to the light receiving unit. The light receiving unit converts the inspection light into an electric signal having an intensity according to an amount of received light. The control unit detects damage of the rotary blade based on an electric signal sent from the light receiving unit.

An integrator (10) includes an operational amplifier (11), a first filter (12) connected to an inverting input terminal of the operational amplifier, and a second filter (13) connected between the inverting input terminal and an output terminal of the operational amplifier. The first filter (12) includes n resistive elements (121) connected in series, and (n-1) capacitive elements (122) each having one end connected to an interconnecting node of the resistive elements and the other end connected to ground. The second filter (13) includes n capacitive elements (131) connected in series, and (n-1) resistive elements (132) each having one end connected to an interconnecting node of the capacitive elements and the other end connected to ground.

A diversity reception device (10a) includes four branches: a first (100a) to a fourth (400a) branch for diversity-receiving an OFDM modulation signal. For example, in the first branch (100a), a complex baseband signal detected by an orthogonal demodulation unit (103) is inputted to a phase difference correction unit (104) and inputted to an SN ratio calculation unit (105). The SN calculation unit(105) calculates an SN ratio according to a primary calculation equation of a symbol output of the complex baseband signal. According to these SN ratios, a synthesis unit (500) synthesizes the input signal for demodulation by a demodulation unit (700). Thus, in diversity reception of the OFDM modulation signal, it is possible to obtain a preferable SN ratio (or CN ratio) and improve the receptionresult quality.

The present invention provides a technology capable of obtaining a high S / N ratio and improving the pressure resistance to input pressure in a capacitive sensor manufactured using MEMS technology. The capacitive sensor of the present invention converts the displacement of the diaphragm into a change in the capacitance between the diaphragm and the back plate, wherein, viewed from the normal direction, a part of the outer shape of the diaphragm is arranged inside the opening of the substrate, Other parts of the outer shape of the diaphragm are disposed outside the opening of the substrate.

The invention provides a line connection structure of which a transmission loss between a dielectric line and a suspend line is reduced, a mixer having the structure, and a transceiver provided with the mixer. A first conductor pattern 51 is disposed in the direction across, almost vertically, first dielectric strips 31a and 31b constituting a first NRD guide. A second conductor pattern 52 is disposed in the direction across, almost vertically, second dielectric strips 32a and 32b constituting a second NRD guide. Protruding conductor patterns 10 and 11 which protrude in the extending direction the dielectric strip are provided at the intersections of the conductor pattern and the dielectric strip, respectively.

Provided is a quadrupole mass spectrometer including direct-current voltage sources (62, 63) having response characteristics which ensure that the response time of the direct-current voltage will be shorter than the period of time required for an ion having the highest mass-to-charge ratio (m / z) among the ions introduced into a quadruple mass filter (2) to pass through this filter (2). Main rod electrodes (31-34) and pre-rod electrodes (41-44) are connected to each other via primary differentiation circuits (65, 66). Thus, in the transient state of the voltage change due to the switching of the mass-to-charge ratio, among the ions entering the quadrupole mass filter (2), ions having low m / z values can be removed by a pre-electrode unit (4), and ions having high m / z values can be removed by a main electrode unit (3). Accordingly, a large amount of ions can be prevented from passing through the filter (2) and entering an ion detector (5).

A label which represents the properties thereof by means of electromagnetic wave reflection characteristics, and which is provided with: a base material (11); and a conductor pattern layer (12) formed on the base material (11) and having first and second slits (13a, 13b) disposed adjacent to each other, the first slit (13a) constituting a first resonance element (13Qa) having a resonance frequency at a first frequency, the second slit (13b) constituting a second resonance element (13Qb) having a resonance frequency at a second frequency higher than the first frequency, and the conductor pattern layer (12) being formed on the base material (11) when irradiated with electromagnetic waves. The Q value of the formant exhibited at the first frequency is higher than the Q value of the formant exhibited at the first frequency when the resonance structure of the tag is individually configured by the first slit (13a).

A vibration transducer includes a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.

The diversity receiving device (10a) has four branches that include first to fourth branches (100a to 400a) to diversity-receive OFDM modulated signals. For example, in the first branch (100a), a complex baseband signal that is detected by an orthogonal demodulating unit (103) is input to both a phase-difference correcting unit (104) and an SN-ratio calculating unit (105); the SN-ratio calculating unit (105) calculates SN ratios using a first-order equation of an output of a symbol in the complex baseband signal; and a combining unit (500) creates an input signal depending on the SN ratios in such a manner that a demodulating unit 700 demodulates the input signal. With this configuration, in diversity receiving of OFDM modulated signals, preferable SN ratios (or CN ratios) are calculated, which enhances the quality of the receiving result.

This image acquisition device 1 is provided with a spatial optical modulator 11, an optical scanner 14, a detection unit 32, a control unit 70 and so forth. The spatial optical modulator 11 irradiatesa plurality of irradiation areas on the surface or inside of a subject to be observed S with focused modulated excitation light. The detection unit 32 has on the light receiving plane thereof a plurality of imaging areas that establishes an imaging relationship with the plurality of irradiation areas of the subject to be observed through an imaging optical system. Each of the plurality of imagingareas corresponds to one or more pixels, and pixels that correspond to none of the plurality of imaging areas exist adjacent to each imaging area. The control unit 70 corrects the detection signal ofa pixel corresponding to each imaging area on the basis of the detection signal of a pixel that exists adjacent to the imaging area and corresponds to none of the plurality of imaging areas, and creates an image of the observed subject on the basis of the corrected detection signal. This makes it possible to achieve an image acquisition device and an image acquisition method with which the SN ratio of an observed subject image generated by multi-point scanning can be easily improved.

The invention provides a solid-state image pickup device with little gap in operation timings of the pixels, providing a sensor output of a high S / N ratio. In a solid-state image pickup device provided with a photoelectric conversion pixel unit formed by an array of a plurality of pixels each containing at least a photoelectric conversion unit and a transistor for amplifying a signal from the photoelectric conversion unit, and memory units formed by an array of analog memory cells corresponding to at least a part of the pixels of the photoelectric conversion pixel unit, there are provided plural coupling capacitors respectively connected to plural output lines each of which is connected to a column of pixels, for clamping a signal from a pixel thereby eliminating a noise from the pixel, and plural amplifiers for amplifying a signal voltage from the coupling capacitor with a gain exceeding unity and outputting an amplified signal for writing into the analog memory cell.

A method and an apparatus for perforating a printed circuit board are provided so that the processing efficiency and the board densification can be improved. In test processing, a conductor layer 50 i is irradiated with a pulsed laser beam 4 a whose energy density is set at a value high enough to process the conductor layer 50 i while emission 23 a from a processed portion is monitored. Thus, thenumber of pulses of irradiation required for processing a window in the conductor layer 50 i is obtained. An insulating layer 51 i is irradiated with a pulsed laser beam 5 a whose energy density is set at a value high enough to process the insulating layer 51 i but low enough not to process a conductor layer 50 i+1 under the insulating layer 51 i. Thus, the number of pulses of irradiation required for processing a window in the insulating layer 51 i is obtained. The conductor layer 50 i is irradiated with the laser beam 4 a the obtained number of pulses of irradiation, and the insulating layer 51 i is irradiated with the laser beam 5 a the obtained number of pulses of irradiation. Thus, a hole is processed in the printed circuit board.

The invention provides a vibration transducer. The vibration beam is arranged on the substrate parallel to the substrate and parallel to each other, and is arranged in a vacuum chamber formed by the housing and the substrate. Each vibrating beam has a cross-sectional shape in which a cross-sectional thickness in a direction perpendicular to the substrate surface is greater than a cross-sectional thickness in a direction parallel to the substrate surface. The first electrode plate is arranged parallel to the substrate surface and connected to one end of each vibration beam. The second electrode plate is arranged parallel to the substrate surface and between the vibrating beams. The third and fourth electrode plates are arranged on opposite sides of the vibrating beam. The rough parts are arranged in the surfaces of the vibration beam and the opposite side wall portions of the second, third and fourth electrode plates.