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This invention provides a purging device and semiconductor deposition equipment, overcoming the shortcomings of uneven purging and inability to form a complete gas curtain in the transport channel of existing MOCVD equipment. The device sets the first and second purging channels at specific angles, so that the two airflows converge in the chamber in front of the valve plate and are located inside the chamber, thereby forming a fully enclosed protective gas curtain from top to bottom without dead angles. This effectively blocks the diffusion of reactive gases to the valve plate side, improves the dustproof and heat protection effect of the valve plate, and enhances the operational stability and safety of the equipment.