High voltage pulse generating circuit and high voltage pulse generator

Abstract

The present invention provides a high-voltage pulse generating circuit and a high-voltage pulse generator, comprising: a pulse processing circuit connected to a first-stage push-pull circuit for generating complementary square wave pulses; a floating voltage boosting circuit connected to the first-stage push-pull circuit and the second-stage push-pull circuit, respectively, for powering the second-stage push-pull circuit; the first-stage push-pull circuit and the second-stage push-pull circuit, respectively, for generating a high-voltage drive pulse driven by the square wave pulse; and the second-stage push-pull circuit, driven by the high-voltage drive pulse and powered by the floating voltage boosting circuit, for generating a target high-voltage pulse to control the switching state of a high-voltage control device. In the present invention, a floating voltage boosting circuit is used to continuously power the second-stage push-pull circuit, i.e., the drive voltage of the second-stage push-pull circuit can be suspended, thereby achieving a continuous high-voltage output with a 100% duty cycle.

Description

Technical Field

[0001] The present invention relates to the technical field of circuits, and in particular to a high-voltage pulse generating circuit and a high-voltage pulse generator. Background Art

[0002] The existing high-voltage pulse generating circuit uses 5V digital logic circuits, high-speed pulse shaping circuits and a variety of high- and low-voltage high-speed metal oxide semiconductor field-effect transistors as drivers. By shaping, accelerating, and superimposing high voltage on the input pulses, it realizes the conversion and generation of high-voltage fast pulses, thereby achieving high-speed on or off control of the equipment.

[0003] In actual high voltage pulse generating devices, such as Figure 1 As shown, most of these pulse generators do not have a DC voltage signal bandwidth. When implementing push-pull field-effect transistor driving, they all use a bootstrap voltage boost method using diodes and capacitors to achieve low-voltage control of the MOS tube on the high-voltage side. However, this method has a major defect in switch control, namely, it cannot achieve continuous high-voltage output with a 100% duty cycle. Summary of the Invention

[0004] In view of this, an object of the present invention is to provide a high-voltage pulse generating circuit and a high-voltage pulse generator to alleviate the technical problem that the existing high-voltage pulse generating circuit cannot achieve continuous high-voltage output with a 100% duty cycle.

[0005] In a first aspect, an embodiment of the present invention provides a high-voltage pulse generating circuit, comprising: a pulse processing circuit, a floating voltage boosting circuit, a first-stage push-pull circuit, and a second-stage push-pull circuit;

[0006] The pulse processing circuit is connected to the first-stage push-pull circuit and is used to emit complementary square wave pulses;

[0007] The floating voltage boost circuit is connected to the first-stage push-pull circuit and the second-stage push-pull circuit respectively, and is used to supply power to the second-stage push-pull circuit;

[0008] The first-stage push-pull circuit is connected to the second-stage push-pull circuit and is configured to generate a high-voltage driving pulse under the push of the square wave pulse;

[0009] The second-stage push-pull circuit is used to generate a target high-voltage pulse under the drive of the high-voltage drive pulse and when powered by the floating voltage boost circuit, so as to control the switching state of the high-voltage control device.

[0010] Furthermore, the first-stage push-pull circuit includes: a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor;

[0011] The first output end of the pulse processing circuit is connected to the gate of the first MOS transistor and the gate of the second MOS transistor respectively;

[0012] The second output end of the pulse processing circuit is connected to the gate of the third MOS transistor and the gate of the fourth MOS transistor respectively, wherein the signals output by the first output end of the pulse processing circuit and the second output end of the pulse processing circuit are complementary;

[0013] The source of the first MOS transistor is connected to the drain of the second MOS transistor, the source of the third MOS transistor is connected to the drain of the fourth MOS transistor, and the source of the fourth MOS transistor is grounded.

[0014] Furthermore, the floating voltage boost circuit includes: an independent power supply and a capacitor;

[0015] One end of the independent power supply is connected to the drain of the first MOS transistor and one end of the capacitor, and the other end of the independent power supply is connected to the source of the second MOS transistor and the other end of the capacitor.

[0016] Furthermore, the second-stage push-pull circuit includes: a fifth MOS transistor and a sixth MOS transistor;

[0017] The gate of the fifth MOS transistor is connected to the source of the first MOS transistor, the source of the fifth MOS transistor is connected to the source of the second MOS transistor, the drain of the sixth MOS transistor, and the high-voltage control device, and the drain of the fifth MOS transistor is connected to a variable high-voltage power supply;

[0018] The gate of the sixth MOS transistor is connected to the source of the third MOS transistor, and the source of the sixth MOS transistor is grounded.

[0019] Furthermore, the pulse processing circuit includes: a hysteresis comparator, a monostable trigger and an RS trigger.

[0020] Furthermore, it also includes: a first resistor;

[0021] The gate of the fifth MOS transistor is connected to the source of the first MOS transistor through the first resistor.

[0022] Furthermore, it also includes: a second resistor;

[0023] The gate of the sixth MOS transistor is connected to the source of the third MOS transistor through the second resistor.

[0024] Furthermore, a third resistor is included;

[0025] The source of the fifth MOS tube is connected to the high-voltage control device through the third resistor.

[0026] Furthermore, the voltage value of the independent power supply is 12V.

[0027] In a second aspect, an embodiment of the present invention further provides a high-voltage pulse generator, comprising: the high-voltage pulse generating circuit according to any one of the above-mentioned first aspects, further comprising: a variable high-voltage power supply;

[0028] The variable high-voltage power supply is connected to the drain of the fifth MOS transistor in the high-voltage pulse generating circuit.

[0029] In an embodiment of the present invention, the high-voltage pulse generating circuit includes: a pulse processing circuit, a floating voltage boosting circuit, a first-stage push-pull circuit, and a second-stage push-pull circuit; the pulse processing circuit is connected to the first-stage push-pull circuit for emitting complementary square wave pulses; the floating voltage boosting circuit is respectively connected to the first-stage push-pull circuit and the second-stage push-pull circuit for powering the second-stage push-pull circuit; the first-stage push-pull circuit is connected to the second-stage push-pull circuit for generating a high-voltage driving pulse under the drive of the square wave pulse; the second-stage push-pull circuit is configured to generate a target high-voltage pulse under the drive of the high-voltage driving pulse and when powered by the floating voltage boosting circuit to control the switching state of the high-voltage control device. As can be seen from the above description, in the high-voltage pulse generating circuit of the present invention, the floating voltage boosting circuit is used to continuously power the second-stage push-pull circuit, that is, the driving voltage of the second-stage push-pull circuit can be suspended, so that the high-voltage pulse generating circuit can achieve a continuous high-voltage output with a 100% duty cycle, alleviating the technical problem that the existing high-voltage pulse generating circuit cannot achieve a continuous high-voltage output with a 100% duty cycle. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0031] Figure 1 A schematic structural diagram of a conventional high-voltage pulse generating circuit provided by an embodiment of the present invention;

[0032] Figure 2 A schematic structural diagram of a high-voltage pulse generating circuit provided in an embodiment of the present invention;

[0033] Figure 3 A schematic diagram of the circuit structure of a high-voltage pulse generating circuit provided by an embodiment of the present invention;

[0034] Figure 4A schematic diagram of the circuit structure of another high-voltage pulse generating circuit provided by an embodiment of the present invention.

[0035] Icons: 11-pulse processing circuit; 12-floating voltage boost circuit; 13-first-stage push-pull circuit; 14-second-stage push-pull circuit. DETAILED DESCRIPTION

[0036] The following will clearly and completely describe the technical solutions of the present invention in conjunction with the embodiments. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0037] To facilitate understanding of this embodiment, a high-voltage pulse generating circuit disclosed in an embodiment of the present invention is first introduced in detail.

[0038] Example 1:

[0039] Figure 2 FIG. 1 is a schematic structural diagram of a high-voltage pulse generating circuit according to an embodiment of the present invention. Figure 2 As shown, the high-voltage pulse generating circuit includes: a pulse processing circuit 11, a floating voltage boosting circuit 12, a first-stage push-pull circuit 13 and a second-stage push-pull circuit 14;

[0040] The pulse processing circuit 11 is connected to the first-stage push-pull circuit 13 and is used to emit complementary square wave pulses;

[0041] The floating voltage boost circuit 12 is connected to the first-stage push-pull circuit 13 and the second-stage push-pull circuit 14 respectively, and is used to supply power to the second-stage push-pull circuit 14;

[0042] The first-stage push-pull circuit 13 is connected to the second-stage push-pull circuit 14 and is used to generate a high-voltage driving pulse under the push of a square wave pulse;

[0043] The second-stage push-pull circuit 14 is used to generate a target high-voltage pulse under the drive of the high-voltage driving pulse and when powered by the floating voltage boost circuit 12, so as to control the switching state of the high-voltage control device.

[0044] The inventors consider the existing high voltage pulse generating circuit, referring to Figure 1, both utilize a diode D and capacitor C to bootstrap the voltage to drive the field-effect transistor. However, due to the rectification characteristics of diode D, this method lacks a DC voltage signal bandwidth (i.e., a direct current voltage signal bandwidth). If a direct current voltage signal passes through diode D, capacitor C cannot charge or discharge, and a small voltage remains across capacitor C. This makes it impossible to drive the fifth MOS transistor Q5 in the second-stage push-pull circuit 14 and thus fail to generate the target high-voltage pulse. Therefore, existing high-voltage pulse generating circuits only have an alternating current voltage signal bandwidth. That is, when the AC signal is rectified by diode D, a half-wave direct current pulsating current is generated. This half-wave direct current pulsating current charges and discharges capacitor C, driving the fifth MOS transistor Q5 in the second-stage push-pull circuit 14 on and off. As can be seen from the above description, the fifth MOS transistor Q5 ultimately cannot achieve a continuous high-voltage output with a 100% duty cycle.

[0045] Based on this, the inventor designed a floating voltage boost circuit 12 to power the second-stage push-pull circuit 14. The driving voltage of the second-stage push-pull circuit 14 can be suspended, and does not rely on the input pulse frequency to boost the charging and discharging of the capacitor. It always relies on the suspended power supply for power supply, so the high-voltage pulse generating circuit can achieve continuous high-voltage output with a duty cycle of 100%.

[0046] In an embodiment of the present invention, the high-voltage pulse generating circuit includes: a pulse processing circuit 11, a floating voltage boosting circuit 12, a first-stage push-pull circuit 13 and a second-stage push-pull circuit 14; the pulse processing circuit 11 is connected to the first-stage push-pull circuit 13 for emitting complementary square wave pulses; the floating voltage boosting circuit 12 is respectively connected to the first-stage push-pull circuit 13 and the second-stage push-pull circuit 14 for powering the second-stage push-pull circuit 14; the first-stage push-pull circuit 13 is connected to the second-stage push-pull circuit 14 for generating a high-voltage drive pulse under the impetus of a square wave pulse; the second-stage push-pull circuit 14 is used to generate a target high-voltage pulse under the impetus of a high-voltage drive pulse and when powered by the floating voltage boosting circuit 12, so as to control the switching state of the high-voltage control device. From the above description, it can be seen that in the high-voltage pulse generating circuit of the present invention, a floating voltage boost circuit 12 is used to continuously power the second-stage push-pull circuit 14, that is, the driving voltage of the second-stage push-pull circuit 14 can be suspended, so the high-voltage pulse generating circuit can achieve a continuous high-voltage output with a duty cycle of 100%, alleviating the technical problem that the existing high-voltage pulse generating circuit cannot achieve a continuous high-voltage output with a duty cycle of 100%.

[0047] The above content briefly introduces the high-voltage pulse generating circuit of the present invention. The specific structure involved is introduced in detail below.

[0048] In an alternative embodiment of the present invention, reference Figure 3 and Figure 4 The first-stage push-pull circuit 13 includes: a first MOS transistor Q1, a second MOS transistor Q2, a third MOS transistor Q3 and a fourth MOS transistor Q4;

[0049] The first output terminal of the pulse processing circuit 11 is connected to the gate of the first MOS transistor Q1 and the gate of the second MOS transistor Q2 respectively;

[0050] The second output terminal of the pulse processing circuit 11 is connected to the gate of the third MOS transistor Q3 and the gate of the fourth MOS transistor Q4 respectively, wherein the signals output by the first output terminal of the pulse processing circuit 11 and the second output terminal of the pulse processing circuit 11 are complementary;

[0051] The source of the first MOS transistor Q1 is connected to the drain of the second MOS transistor Q2 , the source of the third MOS transistor Q3 is connected to the drain of the fourth MOS transistor Q4 , and the source of the fourth MOS transistor Q4 is grounded.

[0052] In an alternative embodiment of the present invention, reference Figure 3 and Figure 4 , the floating voltage boost circuit 12 includes: an independent power supply VCC and a capacitor C;

[0053] One end of the independent power supply VCC is connected to the drain of the first MOS transistor Q1 and one end of the capacitor C, and the other end of the independent power supply VCC is connected to the source of the second MOS transistor Q2 and the other end of the capacitor C.

[0054] In an alternative embodiment of the present invention, reference Figure 3 and Figure 4 The second-stage push-pull circuit 14 includes a fifth MOS transistor Q5 and a sixth MOS transistor Q6;

[0055] The gate of the fifth MOS transistor Q5 is connected to the source of the first MOS transistor Q1, the source of the fifth MOS transistor Q5 is connected to the source of the second MOS transistor Q2, the drain of the sixth MOS transistor Q6, and the high-voltage control device, and the drain of the fifth MOS transistor Q5 is connected to the variable high-voltage power supply HV-600V;

[0056] The gate of the sixth MOS transistor Q6 is connected to the source of the third MOS transistor Q3 , and the source of the sixth MOS transistor Q6 is grounded.

[0057] In an alternative embodiment of the present invention, reference Figure 3 and Figure 4 , the high voltage pulse generating circuit further includes: a first resistor R1;

[0058] The gate of the fifth MOS transistor Q5 is connected to the source of the first MOS transistor Q1 through the first resistor R1.

[0059] In an alternative embodiment of the present invention, reference Figure 3 and Figure 4 , the high voltage pulse generating circuit further includes: a second resistor R2;

[0060] The gate of the sixth MOS transistor Q6 is connected to the source of the third MOS transistor Q3 via the second resistor R2.

[0061] In an alternative embodiment of the present invention, reference Figure 3 and Figure 4 , the high voltage pulse generating circuit further includes a third resistor R3;

[0062] The source of the fifth MOS transistor Q5 is connected to the high-voltage control device through the third resistor R3.

[0063] In this embodiment of the present invention, after the input pulse signal is processed by the pulse processing circuit 11, a complementary square wave pulse is output. One square wave pulse passes through the first MOS transistor Q1, the second MOS transistor Q2, and the fifth MOS transistor Q5, while the other complementary square wave pulse passes through the third MOS transistor Q3, the fourth MOS transistor Q4, and the sixth MOS transistor Q6. The complementary square wave pulse first serves as the driving portion of the first-stage push-pull circuit 13, generating a high-voltage drive pulse under the action of the first-stage push-pull circuit 13, which then provides drive for the second-stage push-pull circuit, ultimately achieving the output of the target high-voltage pulse. During this period, the independent power supply in the floating voltage boost circuit 12 (in this embodiment of the present invention, the voltage value of the independent power supply is 12V) provides the level of the high-voltage drive pulse, which continuously powers the second-stage push-pull circuit 14.

[0064] In addition, the first MOS transistor Q1 , the second MOS transistor Q2 , the third MOS transistor Q3 , the fourth MOS transistor Q4 , the fifth MOS transistor Q5 and the sixth MOS transistor Q6 in the embodiment of the present invention are all high-speed MOS transistors, which can maximize the edge speed.

[0065] In addition, the pulse processing circuit 11 includes: a hysteresis comparator, a monostable trigger and an RS trigger (not shown in the figure), which can shape the input pulse signal, eliminate overshoot and increase the edge speed.

[0066] The characteristics of various indicators in the high-voltage pulse generating circuit of the present invention are as follows: (1) the high voltage is up to 600V, and the output pulse peak value can achieve 50V-600V voltage control; (2) single power supply 12V power supply, low power consumption 100mA; (3) the output pulse overshoot is less than 0.5% of the peak value, and the edge jitter is less than 5ns; (4) the signal passing bandwidth: DC-1MHz, supporting 0-100% duty cycle control; (5) built-in variable high-voltage power supply, realizing 50V-600V high voltage generation; (6) high-speed rising edge <80ns, falling edge <120ns, TYP@200V.

[0067] The high-voltage pulse generating circuit of the present invention can amplify the voltage of an externally input pulse signal (0-100% duty cycle), achieve rapid output, and further realize turning on and off the device function.

[0068] The high-voltage pulse generating circuit of the present invention can shape the input pulse and improve the speed of the change, has stronger anti-interference and versatility, and has low requirements for the input signal. The circuit can be operated without an input pulse control signal with too high an index. When the circuit of this design is working, the output high-voltage voltage can be controlled through the voltage control interface to achieve arbitrary adjustment of the voltage of 50V-600V, so that the pulse output by the circuit can be compatible with different high-voltage control devices. External pulse input can promote the high voltage and generate high-voltage pulses with the same duty cycle or pulse width.

[0069] Example 2:

[0070] An embodiment of the present invention further provides a high-voltage pulse generator, which includes the high-voltage pulse generating circuit in the above-mentioned embodiment 1, and further includes: a variable high-voltage power supply;

[0071] The variable high-voltage power supply is connected to the drain of the fifth MOS tube in the high-voltage pulse generating circuit.

[0072] Specifically, the variable high-voltage power supply is a voltage-controlled high-voltage source. For example, an input of 3V may correspond to 300V, and 6V may correspond to 600V.

[0073] In addition, in the description of the embodiments of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections or electrical connections; they may refer to direct connections or indirect connections through an intermediate medium; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0074] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0075] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0076] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high voltage pulse generating circuit, characterized in that: include: Pulse processing circuit, suspended voltage boost circuit, first-stage push-pull circuit and second-stage push-pull circuit; The pulse processing circuit is connected to the first-stage push-pull circuit and is used to emit complementary square wave pulses; The floating voltage boost circuit is connected to the first-stage push-pull circuit and the second-stage push-pull circuit respectively, and is used to supply power to the second-stage push-pull circuit; The first-stage push-pull circuit is connected to the second-stage push-pull circuit and is configured to generate a high-voltage driving pulse under the push of the square wave pulse; The second-stage push-pull circuit is configured to generate a target high-voltage pulse under the drive of the high-voltage drive pulse and when powered by the floating voltage boost circuit, so as to control the switching state of the high-voltage control device; Wherein, the first-stage push-pull circuit includes: a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor; The first output end of the pulse processing circuit is connected to the gate of the first MOS transistor and the gate of the second MOS transistor respectively; The second output end of the pulse processing circuit is connected to the gate of the third MOS transistor and the gate of the fourth MOS transistor respectively, wherein the signals output by the first output end of the pulse processing circuit and the second output end of the pulse processing circuit are complementary; The source of the first MOS transistor is connected to the drain of the second MOS transistor, the source of the third MOS transistor is connected to the drain of the fourth MOS transistor, and the source of the fourth MOS transistor is grounded; Wherein, the floating voltage boost circuit includes: an independent power supply and a capacitor; One end of the independent power supply is connected to the drain of the first MOS transistor and one end of the capacitor, and the other end of the independent power supply is connected to the source of the second MOS transistor and the other end of the capacitor; Wherein, the second-stage push-pull circuit includes: a fifth MOS transistor and a sixth MOS transistor; The gate of the fifth MOS transistor is connected to the source of the first MOS transistor, the source of the fifth MOS transistor is connected to the source of the second MOS transistor, the drain of the sixth MOS transistor, and the high-voltage control device, and the drain of the fifth MOS transistor is connected to a variable high-voltage power supply; The gate of the sixth MOS transistor is connected to the source of the third MOS transistor, and the source of the sixth MOS transistor is grounded; After the input pulse signal is processed by the pulse processing circuit, a complementary square wave pulse is output. One square wave pulse passes through the first MOS transistor, the second MOS transistor, and the fifth MOS transistor, and the other complementary square wave pulse passes through the third MOS transistor, the fourth MOS transistor, and the sixth MOS transistor. The complementary square wave pulse first serves as the driving part of the first-stage push-pull circuit, generating a high-voltage drive pulse under the action of the first-stage push-pull circuit, and then providing drive for the second-stage push-pull circuit, ultimately achieving the output of the target high-voltage pulse. The independent power supply in the floating voltage boost circuit provides the level of the high-voltage drive pulse, which continues to power the second-stage push-pull circuit. Wherein, the pulse processing circuit includes: a hysteresis comparator, a monostable trigger and an RS trigger.

2. The high-voltage pulse generating circuit according to claim 1, characterized in that: Also includes: a first resistor; The gate of the fifth MOS transistor is connected to the source of the first MOS transistor through the first resistor.

3. The high voltage pulse generating circuit according to claim 1, characterized in that: Also includes: a second resistor; The gate of the sixth MOS transistor is connected to the source of the third MOS transistor through the second resistor.

4. The high-voltage pulse generating circuit according to claim 1, characterized in that: Also including a third resistor; The source of the fifth MOS tube is connected to the high-voltage control device through the third resistor.

5. The high voltage pulse generating circuit according to claim 1, characterized in that: The voltage value of the independent power supply is 12V.

6. A high voltage pulse generator, characterized in that: include: The high-voltage pulse generating circuit according to any one of claims 1 to 5, further comprising: a variable high-voltage power supply; The variable high-voltage power supply is connected to the drain of the fifth MOS transistor in the high-voltage pulse generating circuit.

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