Ceramic dielectric chip with outer chamfered dish-shaped structure, capacitor and preparation method

Abstract

The ceramic dielectric chip, capacitor and preparation method with an external chamfered disc-shaped structure provided by the present invention include a ceramic dielectric body and a pair of electrodes arranged on the front and back sides of the ceramic dielectric body. The main body of the ceramic dielectric body is cylindrical; the front and back sides of the ceramic dielectric body form symmetrical grooves corresponding to the coverage area of ​​the pair of electrodes, and the electrode is an electrode coating formed on the bottom surface of the groove by a sputtering process; the top surface of the groove is higher than the outer edge of the ceramic dielectric body, so that the outer edge of the ceramic dielectric body forms a chamfered structure. Compared with the prior art, the electrode is an electrode coating formed on the bottom surface of the groove by a sputtering process, and the peripheral height prevents edge breakdown. The sputtering mask can make the electrodes at both ends of the chip face each other, achieving the maximum electrode facing area, thereby obtaining the maximum capacitance. The facing of the electrodes also makes the electric field reach the most uniform state, which can effectively solve the problems of poor product withstand voltage caused by electrode asymmetry.

Description

Technical Field

[0001] The invention belongs to the technical field of capacitors, and in particular relates to a ceramic dielectric chip with an outer chamfered dish-shaped structure, a capacitor and a preparation method thereof. Background Art

[0002] Ceramic capacitors are the most widely used components in various electronic devices. In recent years, with the rapid development of the electronic components industry, the size and thickness of electronic products have tended to be miniaturized as a whole, and people's requirements for electronic equipment have become higher and higher. The breakdown strength is one of the most important parameters of ceramic capacitors. It is mainly determined by the material itself (formula) of the product, but it is also related to its electrode form and encapsulation material, etc., especially when the electrodes are asymmetric, it will cause uneven electric field. This defect will cause the capacitor to have reduced voltage resistance or poor voltage resistance.

[0003] Most of the current ceramic dielectric capacitors are in the form of discs or disks. As the products tend to be miniaturized and reduced in size, the requirements for dielectric materials are higher, and the dielectric constant K value of the materials needs to be relatively high. In production practice, it is found that quite a number of product breakdown failures are not caused by the poor properties of the dielectric materials themselves, but a considerable part of the reasons are caused by process or appearance defects, such as the asymmetry and misalignment of the electrodes on the front and back sides when printing silver electrodes, resulting in misalignment of the upper and lower electrodes, a small effective area of ​​the silver surface, and uneven electric field distribution. The edge effect causes the product to break down under high voltage conditions due to high-voltage ionization of the air at the edge. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a ceramic dielectric chip with an outer chamfered dish-shaped structure, a capacitor and a preparation method, and the technical solution is as follows:

[0005] A ceramic dielectric chip with an external chamfered disc-shaped structure includes a ceramic dielectric body and a pair of electrodes arranged on the front and back surfaces of the ceramic dielectric body, wherein the main body of the ceramic dielectric body is cylindrical; symmetrical grooves are formed on the front and back surfaces of the ceramic dielectric body corresponding to the coverage areas of the pair of electrodes, and the electrodes are electrode coatings formed on the bottom surfaces of the grooves by a sputtering process; the top surface of the groove is higher than the outer edge of the ceramic dielectric body, so that the outer edge of the ceramic dielectric body forms a chamfered structure.

[0006] Preferably, the inner side surface of the groove is an inclined surface, and the angle between the inclined surface and the bottom surface of the groove is greater than 90 degrees.

[0007] Preferably, the outer edge of the ceramic dielectric body is higher than the bottom surface of the groove.

[0008] Preferably, the bottom surface of the groove and the electrode plane are both circular.

[0009] Preferably, the electrode coating is a copper electrode or a copper-indium-chromium alloy electrode.

[0010] Preferably, the thickness of the electrode coating is 0.8-1.0 micrometers.

[0011] Preferably, a protrusion is formed on the bottom surface of the groove and the middle area of ​​the electrode plane, and the side surface of the protrusion is connected to the bottom surface of the groove and the corresponding peripheral area of ​​the electrode plane by an arc transition.

[0012] Preferably, the diameter d of the protrusion is 1 / 4 of the outer diameter D of the ceramic dielectric chip of the disc-shaped structure.

[0013] The present invention also provides a ceramic capacitor, comprising a ceramic dielectric chip, electrode leads and an insulating encapsulation layer, wherein the ceramic dielectric chip is a ceramic dielectric chip with an outer chamfered disc-shaped structure.

[0014] The present invention also provides a method for preparing a ceramic dielectric chip with an outer chamfered dish-shaped structure, comprising the following steps:

[0015] 1) Porcelain powder selection

[0016] Calculate the dielectric constant of the required ceramic powder according to the chip outer diameter and thickness, and the electrode mask diameter, and select the appropriate ceramic powder;

[0017] 2) Molding

[0018] A disc-shaped mold is installed on a rotary press to press the porcelain powder and form a green body;

[0019] 3) Swinging film

[0020] Put the green body into the rocking plate, and use the rocking tube and tweezers to put the green body and the rocking plate into the firing plate;

[0021] 4) Firing

[0022] Put the loaded setter into the tunnel furnace for firing;

[0023] 5) Fired porcelain performance test

[0024] According to the requirements of the firing inspection regulations, various electrical performance parameters including diameter, thickness, capacitance, loss and breakdown voltage are measured, and the qualification is determined according to the standards; if unqualified, it is regarded as scrap; if qualified, proceed to the next step;

[0025] 6) Sputtering

[0026] The qualified fired porcelain body is installed in conjunction with the electrode mask, leaving only the bottom surface of the groove exposed, and is fixedly suspended in the sputtering machine. First, copper, chromium and indium alloys are sputtered on the bottom layer, and then pure copper is sputtered on the surface, with a film thickness of 0.8-1.0 microns.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] In the present invention, symmetrical grooves are formed on the front and back sides of the ceramic dielectric body corresponding to the coverage area of ​​a pair of electrodes. The electrode is an electrode coating formed on the bottom surface of the groove by a sputtering process. The periphery is high to prevent edge breakdown. The sputtering mask can make the electrodes at both ends of the chip face each other, achieving the maximum electrode facing area, thereby obtaining the maximum capacitance. The facing of the electrodes also makes the electric field reach the most uniform state, which can effectively solve the problems of poor product withstand voltage caused by electrode asymmetry (the symmetry of the electrodes ensures the uniformity of the electric field, which can eliminate the edge effect to a certain extent and avoid product breakdown from the edge); the top surface of the groove is higher than the outer edge of the ceramic dielectric body, so that the outer edge of the ceramic dielectric body forms a chamfered structure, and the outermost edge of the chip forms an outer chamfer, so that the edge is not too sharp, and it is not easy to cause edge collapse after collision during the production process.

[0029] Furthermore, the inner side surface of the groove is an inclined surface, and the angle between the inclined surface and the bottom surface of the groove is greater than 90 degrees; the inner side surface of the groove forms a certain angle with the bottom surface of the groove, which can play a certain buffering role when the porcelain powder is filled, reducing the pressure impact caused by the mold during product molding, and is easy to demold, and the product is not easy to crack after sintering.

[0030] Furthermore, the electrode plating is a copper electrode or a copper-indium-chromium alloy electrode. The ohmic contact formed by sputtering copper and copper alloy electrodes will have a higher capacitance than the capacitor manufactured by traditional printed sintered silver electrodes. In particular, the bottom layer is sputtered with copper, chromium and indium alloys, and the surface is sputtered with pure copper. The chromium material of the bottom layer enhances adhesion, the indium material achieves the effect of ohmic contact, and the copper material of the surface layer ensures conductivity and solderability.

[0031] Furthermore, a protrusion is formed on the bottom surface of the groove and the middle area of ​​the electrode plane, and the side surface of the protrusion is connected to the corresponding outer area of ​​the bottom surface of the groove and the electrode plane by an arc transition. The diameter d of the protrusion is 1 / 4 of the outer diameter D of the ceramic dielectric chip of the disc-shaped structure, which can eliminate the gap between the electrode and the lead, and there is no need to make changes to the lead forming machine mold. It is compatible with conventional traditional ceramic capacitor leads. Moreover, the middle protrusion can also increase the electrode area, and the capacitance will be slightly increased compared to a structure without a protrusion. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0033] Figure 1 It is a specific process flow chart of the present invention;

[0034] Figure 2 A schematic diagram of a ceramic dielectric chip with an outer chamfered dish-shaped structure provided by the present invention,

[0035] Among them, 1-ceramic dielectric body; 2-electrode.

[0036] Figure 3 This is a schematic diagram of the structure of the disc-shaped ceramic dielectric chip provided by the present invention.

[0037] Among them, 1-ceramic dielectric body; 2-electrode.

[0038] Figure 4 A schematic diagram of a disc-shaped ceramic dielectric chip with a concave-convex structure provided by the present invention,

[0039] Among them, 1-ceramic dielectric body, 2-electrode.

[0040] Figure 5 A schematic diagram of the positional relationship between the disc-shaped ceramic dielectric chip and the sputtering mask provided by the present invention,

[0041] 1-Ceramic dielectric body, 2-Electrode, 3-Sputtering mask. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] The technical solution provided by the present invention is as follows: a ceramic dielectric chip with an external chamfered disc-shaped structure, comprising a ceramic dielectric body and a pair of electrodes arranged on the front and back surfaces of the ceramic dielectric body, wherein the main body of the ceramic dielectric body is cylindrical; symmetrical grooves are formed on the front and back surfaces of the ceramic dielectric body corresponding to the coverage area of ​​the pair of electrodes, and the electrodes are electrode coatings formed on the bottom surface of the groove by a sputtering process; the top surface of the groove is higher than the outer edge of the ceramic dielectric body, so that the outer edge of the ceramic dielectric body forms a chamfered structure. The inner side surface of the groove is an inclined surface, and the angle between the inclined surface and the bottom surface of the groove is greater than 90 degrees. The outer edge of the ceramic dielectric body is higher than the bottom surface of the groove. The bottom surface of the groove and the electrode plane are both circular. The electrode coating is a copper electrode or a copper-indium-chromium alloy electrode. The thickness of the electrode coating is 0.8-1.0 microns. A bulge is formed in the middle area of ​​the bottom surface of the groove and the electrode plane, and the side surface of the bulge is connected to the corresponding peripheral area of ​​the bottom surface of the groove and the electrode plane by a circular arc transition. The diameter d of the bulge is 1 / 4 of the outer diameter D of the ceramic dielectric chip of the disc-shaped structure.

[0044] The present invention also provides a ceramic capacitor, comprising a ceramic dielectric chip, electrode leads and an insulating encapsulation layer, wherein the ceramic dielectric chip is a ceramic dielectric chip with an outer chamfered disc-shaped structure.

[0045] The present invention also provides a method for preparing a ceramic dielectric chip with an outer chamfered dish-shaped structure, comprising the following steps:

[0046] 1) Porcelain powder selection

[0047] Calculate the dielectric constant of the required ceramic powder according to the chip outer diameter and thickness, and the electrode mask diameter, and select the appropriate ceramic powder;

[0048] 2) Molding

[0049] A disc-shaped mold is installed on a rotary press to press the porcelain powder and form a green body;

[0050] 3) Swinging film

[0051] Put the green body into the rocking plate, and use the rocking tube and tweezers to put the green body and the rocking plate into the firing plate;

[0052] 4) Firing

[0053] Put the loaded setter into the tunnel furnace for firing;

[0054] 5) Fired porcelain performance test

[0055] According to the requirements of the firing inspection regulations, various electrical performance parameters including diameter, thickness, capacitance, loss and breakdown voltage are measured, and the qualification is determined according to the standards; if unqualified, it is regarded as scrap; if qualified, proceed to the next step;

[0056] 6) Sputtering

[0057] The qualified fired porcelain body is installed in conjunction with the electrode mask, leaving only the bottom surface of the groove exposed, and is fixedly suspended in the sputtering machine. First, copper, chromium and indium alloys are sputtered on the bottom layer, and then pure copper is sputtered on the surface, with a film thickness of 0.8-1.0 microns.

[0058] The present invention is further described in detail below by way of examples. Figure 1 It is a specific process flow chart of the present invention, such as Figure 1 As shown:

[0059] Manufacturing Y5UY1400VAC332M specification ceramic dielectric chip, according to the 332M capacitance data in the specification to determine the product's outer diameter is The outer diameter of the disc-shaped mold is obtained based on the shrinkage rate of the Y5U porcelain powder of the product Corresponding sputtering copper electrode mask diameter (see Figure 5A) is the product diameter 8.7mm - 2 times the width of the edge raised part 1.1mm - 7.6mm, which is the attached Figure 2 , Figure 3 and Figure 4 D-2 (T+N). According to the Y1400VAC withstand voltage data in the specification, the inner ring thickness of the disc-shaped product is not less than 1.5mm, and according to the shrinkage rate, the inner ring thickness of the green product is not less than 1.75mm during molding.

[0060] For the selection of porcelain powder, as described above, when the outer diameter of the product, the diameter of the copper electrode mask and the thickness of the product are basically determined, the dielectric constant of the required porcelain powder is calculated to be approximately 9450. Therefore, Y5U porcelain powder with a dielectric constant of 9400-9500 is selected.

[0061] Molding: A disc-shaped mold with an outer diameter of φ10mm is installed on a rotary press. The thickness of the inner ring of the disc is controlled at 1.75±0.02mm, and the thickness of the edge is controlled at 2.00±0.02mm. The weight of the three pieces is controlled within the range of 1.665-1.695g, the unevenness is less than 0.02mm, and there are no defects such as delamination, delamination, and cracking during pressing.

[0062] Use a φ11mm rocking plate to load the green body into the rocking plate, and use a rocking tube and tweezers to load the product into the firing plate.

[0063] Firing: Place the loaded product support plate into the tunnel furnace for firing. The plate pushing speed is 28 minutes / plate. The firing temperature is 1290±10℃. The high temperature zone insulation time is 4 hours.

[0064] The fired porcelain body performance test measures the product's diameter, thickness, capacitance, loss, breakdown voltage and other electrical performance parameters in accordance with the firing inspection procedures, and determines whether it is qualified based on the standards.

[0065] Sputtering, sputtering copper electrode, sputtering copper, chromium and indium alloy on the bottom layer, sputtering pure copper on the surface, film thickness 0.8-1.0 micron.

[0066] The chip performance test measures the product's diameter, thickness, as well as electrical performance parameters such as capacitance, loss, and breakdown voltage in accordance with the chip inspection procedures, and determines whether it is qualified based on the standards.

[0067] Table 1 below gives a comparison of the breakdown voltage of disc ceramic capacitors and conventional ceramic capacitors of the same specifications:

[0068] Table 1

[0069]

[0070] Figure 2 A schematic diagram of a ceramic dielectric chip with an outer chamfered dish-shaped structure provided by the present invention, such as Figure 2As shown: where 1 is the ceramic dielectric body, 2 is the electrode, D is the outer diameter, H is the total thickness, h is the height of the edge protrusion, S is the dished inner chamfer, N is the inner chamfer width, T is the edge protrusion width, M is the outer chamfer height, P is the outer chamfer width, and W is the outer chamfer transition width.

[0071] Figure 3 The schematic diagram of the disc-shaped ceramic dielectric chip structure provided by the present invention is as follows: Figure 3 As shown: 1 is the ceramic dielectric body, 2 is the electrode, D is the outer diameter, H is the total thickness, h is the height of the edge protrusion, S is the dish-shaped inner chamfer, N is the inner chamfer width, and T is the edge protrusion width.

[0072] Figure 4 A schematic diagram of a disc-shaped ceramic dielectric chip with a concave-convex structure provided by the present invention, such as Figure 4 As shown: 1 is the ceramic dielectric body, 2 is the electrode, D is the outer diameter, H is the total thickness, h is the height of the edge protrusion, S is the dish-shaped inner chamfer, N is the inner chamfer width, T is the edge protrusion width, and d is the inner protrusion diameter.

[0073] The ceramic dielectric chip in this embodiment is a component of a ceramic capacitor. After the electrode part of the ceramic dielectric chip is welded to the lead, it is wrapped with a layer of insulating packaging material to be considered a complete ceramic capacitor. The lead is generally 0.3-1.5mm tinned copper wire or tinned steel wire. The lead and the chip are in parallel. The lead is welded to the middle part of the chip. The convex structure around the edge and the concave structure in the middle will cause a gap between the lead and the electrode, which will cause certain obstacles to welding and may also cause unreliable welding. To solve this problem, the welding part must be bent down when the lead is formed (the lead forming machine mold must be changed) so that it can contact the chip electrode. Figure 4 In the structure shown, the middle raised part is equal in height to the surrounding raised parts, the raised part diameter d is about 1 / 4 of the chip outer diameter D, and the raised part is connected to the arc transition of the bottom surface of the chip. This raised structure can eliminate the gap between the electrode and the lead, and there is no need to change the lead forming machine mold, which is common to conventional ceramic capacitor leads. The middle raised part can also increase the electrode area, and the capacitance will be increased compared to no raised structure.

[0074] Figure 5 The schematic diagram of the position relationship between the disc-shaped ceramic dielectric chip and the sputtering mask provided by the present invention is as follows: Figure 5As shown: 1 is the ceramic dielectric body, 2 is the electrode, 3 is the sputtering mask, A is the diameter of the sputtering mask and also the diameter of the electrode. The mask is made of metal material, each set of two pieces, each piece has multiple grooves, each groove diameter is slightly larger than the chip outer diameter about 0.1-0.15mm, just enough to place a chip, after each groove has a chip, buckle another mask, fix the four corners with screws, hang it in the sputtering machine, turn on the machine to sputter the electrode.

[0075] In summary, the mold is designed to have a low circumference in the middle and a high edge, so that the two ends of the pressed product are disc-shaped. The high periphery of the disc prevents edge breakdown, and the edge is chamfered to prevent the edge from being too sharp, thereby preventing edge defects caused by collision during production. The diameter of the sputtering mask hole is equivalent to the diameter of the bottom of the disc to prevent the electrode from overflowing to the edge of the product during sputtering. Copper and copper alloys are used as electrode materials, chromium is sputtered at the bottom to enhance adhesion, indium is sputtered to achieve the effect of ohmic contact, and copper is sputtered on the surface to ensure conductivity and solderability.

[0076] The disc-shaped ceramic dielectric chip provided by the present invention has raised edges around the chip that can effectively prevent edge breakdown caused by edge effects under high-voltage working conditions. The chip electrodes are made by a sputtering process. The sputtering mask can make the electrodes at both ends of the chip face each other, achieving the maximum electrode facing area, thereby obtaining the maximum capacitance. The facing of the electrodes also makes the electric field reach the most uniform state, which can effectively solve the problem of poor product withstand voltage caused by electrode asymmetry. The sputtering process electrode material is copper and copper, indium, chromium alloy. The chromium material can make the sputtering electrode obtain higher adhesion. The indium material can make the electrode form ohmic contact with the porcelain body. Copper has good electrical conductivity and weldability. The ohmic contact between the electrode and the porcelain body is superior to the non-ohmic contact of the traditional ceramic capacitor's printed silver-sintering process. The non-ohmic contact will form a glass phase between the porcelain body and the electrode. This glass phase will increase the thickness of the dielectric layer. From the basic principle of capacitors, it can be seen that the thickness of the dielectric layer is inversely proportional to the capacitance. Therefore, the ohmic contact of sputtered copper and copper alloy electrodes will have higher capacitance than that of capacitors manufactured by traditional printed sintered silver electrodes. Therefore, the thickness and diameter of the porcelain body of a capacitor with the same capacitance will be smaller than that of the traditional method, thereby realizing the miniaturization of the product and saving material costs. Similarly, sputtered copper electrodes replace sintered silver electrodes, realizing the replacement of base metals with precious metals, which has certain economic benefits.

[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for preparing a ceramic dielectric chip with an outer chamfered dish-shaped structure, characterized in that: A ceramic dielectric chip with an outer chamfered disc-shaped structure manufactured by the preparation method, the chip comprising a ceramic dielectric body and a pair of electrodes arranged on the front and back sides of the ceramic dielectric body, the main body of the ceramic dielectric body being cylindrical; Symmetrical grooves are formed on the front and back sides of the ceramic dielectric body corresponding to the coverage area of ​​the pair of electrodes. The electrodes are electrode coatings formed on the bottom of the grooves by a sputtering process. The electrodes at both ends of the chip are aligned with each other through a sputtering mask to achieve the maximum electrode facing area, thereby achieving the maximum capacitance. The bottom surface of the groove and the electrode plane are both circular, and a bulge is formed in the middle area of ​​the bottom surface of the groove and the electrode plane. The side surface of the bulge is connected with the corresponding peripheral area of ​​the bottom surface of the groove and the electrode plane by an arc transition. The diameter d of the bulge is 1 / 4 of the outer diameter D of the ceramic dielectric chip of the disc-shaped structure, which plays a role in eliminating the gap between the electrode and the lead; The top surface of the groove is higher than the outer edge of the ceramic dielectric body, so that the outer edge of the ceramic dielectric body forms a chamfered structure; The preparation method comprises: 1) Ceramic powder selection: Calculate the dielectric constant of the required ceramic powder according to the chip outer diameter and thickness, electrode mask diameter, and select the appropriate ceramic powder; 2) Molding: Install a disc-shaped mold on a rotary press to press the porcelain powder and mold the green body; 3) Use the swing plate to load the green body into the rocking plate, and use the rocking tube and tweezers to load the green body and the rocking plate into the firing plate; 4) Firing: Place the loaded setter into the tunnel furnace for firing; 5) Performance test of fired porcelain body According to the requirements of firing inspection regulations, various electrical performance parameters including diameter, thickness, capacitance, loss and breakdown voltage are measured, and whether it is qualified is determined according to the standards; if it is unqualified, it is regarded as waste; if it is qualified, proceed to the next step; 6) Sputtering: Install the qualified fired porcelain body with the electrode mask. The mask is made of metal material. Each set has two pieces, each piece has multiple inner grooves. The diameter of each inner groove is slightly larger than the outer diameter of the chip by 0.1-0.15mm, which can just hold a chip. After each inner groove is filled with a chip, buckle another mask and fix it with screws at the four corners, leaving only the bottom of the groove exposed. It is fixed and hung in the sputtering machine. First, copper, chromium and indium alloys are sputtered on the bottom layer, and then pure copper is sputtered on the surface. The film thickness is 0.8-1.0 microns.

2. The method for preparing a ceramic dielectric chip with an outer chamfered dish-shaped structure according to claim 1, characterized in that: The inner side surface of the groove is an inclined surface, and the angle between the inclined surface and the bottom surface of the groove is greater than 90 degrees.

3. The method for preparing a ceramic dielectric chip with an outer chamfered dish-shaped structure according to claim 1, characterized in that: The outer edge of the ceramic dielectric body is higher than the bottom surface of the groove.

4. The method for preparing a ceramic dielectric chip with an outer chamfered dish-shaped structure according to claim 1, characterized in that: The electrode plating layer is a copper electrode or a copper-indium-chromium alloy electrode.

5. The method for preparing a ceramic dielectric chip with an outer chamfered dish-shaped structure according to claim 1, characterized in that: The thickness of the electrode coating is 0.8-1.0 micrometers.

6. A ceramic capacitor, comprising a ceramic dielectric chip, electrode leads and an insulating encapsulation layer, characterized in that: The ceramic dielectric chip is the ceramic dielectric chip with an outer chamfered dish-shaped structure as claimed in claim 1.

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