Display device and method for manufacturing a display device

Abstract

The present disclosure relates to a display device and a method for manufacturing a display device. The display device can include a substrate including a display area and a bending area; a buffer layer disposed on the substrate; a first dummy pattern disposed on the buffer layer in the bending area; a first insulating layer disposed on the buffer layer, the first insulating layer exposing an upper surface of the first dummy pattern; a second insulating layer disposed on the first insulating layer, the second insulating layer having an opening exposing the upper surface of the first dummy pattern; a second dummy pattern disposed on the upper surface of the first dummy pattern exposed through the opening; and a transmission line disposed on the second dummy pattern.

Description

Technical Field

[0001] The embodiments relate to a display device and a method for manufacturing the display device, and more specifically, the embodiments relate to a display device including a curved region and a method for manufacturing the display device. Background Technology

[0002] Organic light-emitting display devices may include a flexible substrate formed of polymers or the like. The display panel including the flexible substrate can be designed to have curved regions, and to prevent the inorganic layer from cracking due to bending stress applied to the curved regions, a masking process for removing the inorganic layer can be additionally performed in the curved regions. In this case, the manufacturing cost of the organic light-emitting display device may increase as the number of masking processes increases.

[0003] Recently, in order to reduce the manufacturing cost of organic light-emitting display devices, organic light-emitting display devices that include an inorganic layer formed in the bending region have been developed without the need for an additional masking process to remove the inorganic layer formed in the bending region. However, when the inorganic layer remains in the bending region, the bending region may become prone to cracking. Summary of the Invention

[0004] An embodiment provides a display device including a curved region.

[0005] An embodiment provides a method for manufacturing a display device including a curved region.

[0006] A display device according to an embodiment may include: a substrate including a display area and a curved area; a buffer layer disposed on the substrate; a first dummy pattern disposed on the buffer layer in the curved area; a first insulating layer disposed on the buffer layer, the first insulating layer exposing an upper surface of the first dummy pattern; a second insulating layer disposed on the first insulating layer, the second insulating layer having an opening exposing the upper surface of the first dummy pattern; a second dummy pattern disposed on the upper surface of the first dummy pattern exposed through the opening; and a transmission line disposed on the second dummy pattern.

[0007] In an embodiment, the substrate may include: a first organic film; a first barrier layer disposed on the first organic film; a second organic film disposed on the first barrier layer; and a second barrier layer disposed on the second organic film.

[0008] In an embodiment, the display device may further include a source electrode and a drain electrode disposed on the second insulating layer in the display area. The material included in the second dummy pattern is the same as the material included in each of the source electrode and the drain electrode.

[0009] In an embodiment, the second dummy pattern may contact the exposed upper surface of the first dummy pattern.

[0010] In one embodiment, the substrate may further include: a peripheral region disposed between the display region and the curved region; and a connecting region disposed adjacent to the curved region. The second dummy pattern extends from the edge of the peripheral region to the edge of the connecting region.

[0011] In an embodiment, the display device may further include: a first organic layer disposed on the second dummy pattern; wherein the transmission line is disposed on the first organic layer.

[0012] In one embodiment, the display device may further include a second organic layer disposed on the transmission line.

[0013] In an embodiment, the display device may further include: a lower electrode disposed on the second organic layer in the display area; an emitting layer disposed on the lower electrode; and an upper electrode disposed on the emitting layer.

[0014] In one embodiment, the display device may further include an active layer disposed on the buffer layer in the display area. The material included in the first dummy pattern is the same as the material included in the active layer.

[0015] In an embodiment, the first dummy pattern may include a silicon semiconductor.

[0016] In an embodiment, the first dummy pattern may include polysilicon.

[0017] A method for manufacturing a display device according to an embodiment may include: providing a substrate including a display area and a curved area; forming a buffer layer on the substrate; forming a first dummy pattern on the buffer layer in the curved area; forming a first insulating layer on the buffer layer covering the first dummy pattern; forming a second insulating layer on the first insulating layer; exposing an upper surface of the first dummy pattern by removing each of the first insulating layer and the second insulating layer; forming a second dummy pattern on the exposed upper surface of the first dummy pattern; and forming a transmission line on the second dummy pattern.

[0018] In an embodiment, the substrate may include: a first organic film; a first barrier layer disposed on the first organic film; a second organic film disposed on the first barrier layer; and a second barrier layer disposed on the second organic film.

[0019] In an embodiment, the method may further include forming a source electrode and a drain electrode on the second insulating layer in the display area. The material included in the second dummy pattern is the same as the material included in each of the source electrode and the drain electrode.

[0020] In an embodiment, the second dummy pattern may contact the exposed upper surface of the first dummy pattern.

[0021] In one embodiment, the substrate may further include: a peripheral region disposed between the display region and the curved region; and a connecting region disposed adjacent to the curved region. The second dummy pattern extends from the edge of the peripheral region to the edge of the connecting region.

[0022] In an embodiment, the method may further include: forming a first organic layer on the second dummy pattern; forming the transmission line on the first organic layer; and forming a second organic layer on the transmission line.

[0023] In an embodiment, the method may further include: forming an active layer on the buffer layer in the display area. The material included in the first dummy pattern is the same as the material included in the active layer.

[0024] In an embodiment, the first dummy pattern may include a silicon semiconductor.

[0025] In an embodiment, the first dummy pattern may include polysilicon.

[0026] According to an embodiment of a display device, a first dummy pattern comprising polysilicon can be disposed on a buffer layer in a curved region, and a second dummy pattern can be disposed in contact with the exposed upper surface of the first dummy pattern. Therefore, the propagation of cracks occurring in the inorganic layer to the transmission lines can be prevented.

[0027] According to an embodiment, a method for manufacturing a display device can omit the masking process for removing the inorganic layer from a curved region; a first dummy pattern comprising polysilicon can be formed on a buffer layer in the curved region; and a second dummy pattern can be formed to contact the exposed upper surface of the first dummy pattern. Therefore, the manufacturing cost of the display device can be reduced.

[0028] A display device according to an embodiment may include: a substrate including a display area and a non-display area; a buffer layer disposed on the substrate in the display area and the non-display area; a first dummy pattern disposed on the buffer layer in the non-display area, the first dummy pattern being electrically levitated; a first insulating layer disposed on the buffer layer, the first insulating layer exposing an upper surface of the first dummy pattern; a second insulating layer disposed on the first insulating layer, the second insulating layer having an opening exposing the upper surface of the first dummy pattern; a second dummy pattern disposed on the upper surface of the first dummy pattern exposed through the opening; and a transmission line disposed on the second dummy pattern.

[0029] In an embodiment, the display device may further include a thin-film transistor. The thin-film transistor may include: an active layer; a gate electrode overlapping the active layer, with a first insulating layer disposed between the active layer and the gate electrode; and a source electrode and a drain electrode connected to the active layer via contact holes formed through the first insulating layer and the second insulating layer. The first dummy pattern may be disposed on the same layer as the active layer and may be formed of the same material as the active layer.

[0030] The second dummy pattern can directly contact the first dummy pattern.

[0031] The second dummy pattern can be disposed on the same layer as the source electrode and the drain electrode, and can be formed of the same material as the source electrode and the drain electrode. Attached Figure Description

[0032] The illustrative, non-limiting embodiments will be more clearly understood through the following detailed description taken in conjunction with the accompanying drawings.

[0033] Figure 1 This is a plan view showing a display device according to an embodiment.

[0034] Figure 2 This is a cross-sectional view showing a display device according to an embodiment.

[0035] Figure 3 This is a cross-sectional view showing a conventional display device.

[0036] Figure 4 Is with Figure 1 The example of the display device is a cross-sectional view taken along lines I-I' and II-II'.

[0037] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Figure 9 , Figure 10 and Figure 11 This is a cross-sectional view illustrating a method for manufacturing a display device according to an embodiment.

[0038] Figure 12 Is with Figure 1 Another example of a display device is a cross-sectional view taken along lines I-I' and II-II'.

[0039] Figure 13 Is with Figure 1 Another example of a display device is a cross-sectional view taken along lines I-I' and II-II'. Detailed Implementation

[0040] In the following, the display device and the method for manufacturing the display device according to the embodiments will be described in detail with reference to the accompanying drawings.

[0041] Figure 1 This is a plan view showing a display device according to an embodiment. Figure 2 This is a cross-sectional view showing a display device according to an embodiment. Figure 1 The unfolded state can be shown to illustrate curved and connected areas in a plan view.

[0042] Reference Figure 1 and Figure 2 The display device 100 may include a display area DA and a peripheral area PA adjacent to the display area DA. The display area DA may include a plurality of pixel areas PX. According to an embodiment, a light-emitting element (e.g. Figure 4 The organic light-emitting diode (OLED) shown in the diagram and the driving element electrically connected to the light-emitting element can be disposed in each pixel region PX. Figure 1 In this context, the peripheral area PA can surround at least a portion of the display area DA.

[0043] The display device 100 may further include a curved region BA and a connecting region CA. The curved region BA may extend from one side of the peripheral region PA and may bend downwards. In other words, the curved region BA bends about a virtual axis along a first direction D1, such that the connecting region CA can be located on the bottom surface of the display device 100. The connecting region CA may extend from the curved region BA and may be positioned below the display region DA or the peripheral region PA. Figure 1 As shown, when the display device 100 is unfolded, the curved region BA can be disposed between the peripheral region PA and the connecting region CA on the second direction D2, which intersects the first direction D1.

[0044] In the connection area CA, connection pads PD can be provided, to which drive signals or power supply voltages from the driving device are applied. Connection pads PD can be electrically connected to the driving device. Connection pads PD can also be electrically connected to transmission lines TL, which connect connection pads PD to pixels in multiple pixel areas PX. Transmission lines TL can be located in the connection area CA, the curved area BA, and the peripheral area PA. Transmission lines TL can transmit drive signals or power supply voltages to the light-emitting elements and driving elements located in the pixel areas PX of the display area DA, or they can transmit drive signals to the driving circuitry (e.g., a driving integrated circuit) located in the peripheral area PA (or the connection area CA).

[0045] Figure 3 This is a cross-sectional view showing a conventional display device. Figure 3 It is similar to conventional display devices. Figure 1 The cross-sectional views taken from lines I-I' and II-II'.

[0046] Reference Figure 3 The display device may include a first organic film 200a, a second organic film 200b, a first barrier layer 210a, a second barrier layer 210b, a buffer layer 220, an active layer 230, a gate electrode 250, a first insulating layer 240a, a second insulating layer 240b, a source electrode 270a, a drain electrode 270b, a connecting electrode 280, a first organic layer 260a, a second organic layer 260b, a lower electrode 290, a pixel defining layer 310, an upper electrode 330, an emitter layer 320, an encapsulation layer 340, a dummy pattern DP, and a transmission line TL, etc.

[0047] The substrate 200, which includes a display area DA, a peripheral area PA adjacent to the display area DA, a curved area BA adjacent to the peripheral area PA, and a connection area CA adjacent to the curved area BA, may include a first organic film 200a, a first barrier layer 210a, a second organic film 200b, and a second barrier layer 210b.

[0048] A buffer layer 220, a first insulating layer 240a, and a second insulating layer 240b may be disposed on a substrate 200. According to an embodiment, a portion of the upper surface of the buffer layer 220 located in the bending region BA may be exposed. The first insulating layer 240a located in the bending region BA may have a first opening 241 exposing the upper surface of the buffer layer 220, and the second insulating layer 240b located in the bending region BA may have a second opening 242 exposing the upper surface of the buffer layer 220.

[0049] A dummy pattern DP can be disposed in the curved region BA on the buffer layer 220. According to an embodiment, the dummy pattern DP can contact the upper surface of the buffer layer 220. The dummy pattern DP can extend into a portion of the peripheral region PA and a portion of the connecting region CA. The dummy pattern DP can extend from the peripheral region PA, which is positioned adjacent to the curved region BA, to the connecting region CA, which is positioned adjacent to the curved region BA.

[0050] The first organic layer 260a, the transmission line TL, and the second organic layer 260b can be disposed on the dummy pattern DP.

[0051] When an inorganic layer is disposed in the bending region BA on the substrate 200, the bending region BA may become susceptible to stress. Therefore, cracks may occur in the inorganic layer, and cracks generated in the inorganic layer may propagate to the transmission line TL.

[0052] Figure 4 Is with Figure 1 The example of the display device is a cross-sectional view taken along lines I-I' and II-II'.

[0053] Reference Figure 4 The display device 100 may include a first organic film 200a, a second organic film 200b, a first barrier layer 210a, a second barrier layer 210b, a buffer layer 220, an active layer 230, a gate electrode 250, a first insulating layer 240a, a second insulating layer 240b, a source electrode 270a, a drain electrode 270b, a connecting electrode 280, a first organic layer 260a, a second organic layer 260b, a lower electrode 290, a pixel defining layer 310, an upper electrode 330, an emitter layer 320, an encapsulation layer 340, a first dummy pattern 350, a second dummy pattern 360, and a transmission line TL, etc.

[0054] A buffer layer 220 may be disposed on a substrate 200, the substrate 200 including a display region DA, a curved region BA, a peripheral region PA disposed between the display region DA and the curved region BA, and a connection region CA disposed adjacent to the curved region BA. The buffer layer 220 may be completely disposed within the display region DA, the peripheral region PA, the curved region BA, and the connection region CA. For example, the buffer layer 220 may comprise an inorganic material such as an oxide or a nitride. According to an embodiment, the buffer layer 220 may have a stacked structure in which a silicon oxide layer and a silicon nitride layer are stacked. Alternatively, the buffer layer 220 may have a monolayer structure comprising a silicon oxide layer or a silicon nitride layer. The buffer layer 220 can prevent metal atoms or impurities from diffusing from the substrate 200 into the thin-film transistor.

[0055] According to an embodiment, the substrate 200 may include a first organic film 200a, a first barrier layer 210a, a second organic film 200b, and a second barrier layer 210b. The first barrier layer 210a may be disposed on the first organic film 200a, the second organic film 200b may be disposed on the first barrier layer 210a, and the second barrier layer 210b may be disposed on the second organic film 200b.

[0056] Each of the first organic membrane 200a and the second organic membrane 200b may include at least one polymer membrane. For example, the polymer membrane may include polyethylene terephthalate, polyethylene naphthalate, polyetherketone, polycarbonate, polyarylate, polyethersulfone, and polyimide, etc.

[0057] Each of the first barrier layer 210a and the second barrier layer 210b may include an inorganic material. For example, each of the first barrier layer 210a and the second barrier layer 210b may include silicon oxide, silicon nitride, and silicon oxynitride, etc.

[0058] According to an embodiment, the first barrier layer 210a may have a stacked structure in which an amorphous silicon layer and a silicon oxide layer are stacked. Alternatively, the first barrier layer 210a may have a monolayer structure including a silicon oxide layer.

[0059] According to an embodiment, the second barrier layer 210b may have a single-layer structure including a silicon oxide layer.

[0060] According to an embodiment, the sum of the thickness of the buffer layer 220 and the thickness of the second barrier layer 210b can be approximately Or smaller.

[0061] The active layer 230 may be disposed on the buffer layer 220 in the display area DA. The active layer 230 may comprise a silicon semiconductor or an oxide semiconductor. For example, the active layer 230 may comprise polysilicon. Alternatively, the active layer 230 may comprise indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), or combinations thereof. According to an embodiment, the active layer 230 may comprise polysilicon.

[0062] The first dummy pattern 350 can be disposed on the buffer layer 220 in the curved region BA. According to an embodiment, the first dummy pattern 350 may include the same material as the active layer 230 disposed in the display region DA. That is, the first dummy pattern 350 can be disposed on the same layer as the active layer 230 disposed in the display region DA, and can be formed simultaneously with the active layer 230. The first dummy pattern 350 may include polysilicon. Furthermore, the first dummy pattern 350 may be electrically floated.

[0063] The first insulating layer 240a can be disposed on the buffer layer 220, the active layer 230, and the first dummy pattern 350. The first insulating layer 240a can cover the active layer 230 positioned in the display area DA and the first dummy pattern 350 positioned in the curved area BA. That is, the first insulating layer 240a can be completely disposed in the display area DA, the peripheral area PA, the curved area BA, and the connecting area CA. For example, the first insulating layer 240a may include silicon oxide, silicon nitride, and silicon carbide, etc.

[0064] According to an embodiment, the first insulating layer 240a disposed in the curved region BA can expose the upper surface of the first dummy pattern 350.

[0065] The gate electrode 250 may be disposed on the first insulating layer 240a in the display area DA. The gate electrode 250 may be configured to overlap with the active layer 230. For example, the gate electrode 250 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), alloys thereof, nitrides thereof, conductive metal oxides, and transparent conductive materials.

[0066] The second insulating layer 240b can be disposed on the first insulating layer 240a and the gate electrode 250. The second insulating layer 240b can cover the gate electrode 250. That is, the second insulating layer 240b can be disposed in the display area DA, the peripheral area PA, the bending area BA, and the connection area CA. For example, the second insulating layer 240b can include silicon oxide, silicon nitride, and silicon oxynitride, etc. According to an embodiment, the second insulating layer 240b can be formed as a single layer comprising a single material.

[0067] According to an embodiment, the second insulating layer 240b disposed in the curved region BA may have an opening 243 that exposes the upper surface of the first dummy pattern 350.

[0068] The source electrode 270a and drain electrode 270b can be disposed in the display area DA on the second insulating layer 240b. The source electrode 270a and drain electrode 270b can pass through the first insulating layer 240a and the second insulating layer 240b to be electrically connected to the active layer 230. For example, the source electrode 270a and drain electrode 270b may each include a metal alloy, a metal nitride, a conductive metal oxide, and a transparent conductive material, etc.

[0069] The second dummy pattern 360 can be disposed on the first dummy pattern 350. The second dummy pattern 360 can directly contact the exposed upper surface of the first dummy pattern 350. Therefore, the buffer layer 220 and the second dummy pattern 360 can be attached to each other via the first dummy pattern 350, thereby enhancing the adhesion between the buffer layer 220 and the second dummy pattern 360, and the first dummy pattern 350 and the second dummy pattern 360 can prevent cracks occurring in the inorganic layer from propagating to the transmission line TL.

[0070] The material included in the second dummy pattern 360 can be the same as the material included in each of the source electrode 270a and the drain electrode 270b, and the second dummy pattern 360 can be formed simultaneously with the source electrode 270a and the drain electrode 270b. That is, the second dummy pattern 360, the source electrode 270a, and the drain electrode 270b can be disposed on the same layer. According to an embodiment, the second dummy pattern 360 can extend from the peripheral region PA, where it is positioned adjacent to the edge of the curved region BA, to the connection region CA, where it is positioned adjacent to the edge of the curved region BA.

[0071] The first organic layer 260a may be disposed on the second insulating layer 240b, the source electrode 270a, the drain electrode 270b, and the second dummy pattern 360. The first organic layer 260a may be disposed in the display area DA, the peripheral area PA, the curved area BA, and the connection area CA. For example, the first organic layer 260a may comprise an organic insulating material such as phenolic resin, acrylic resin, polyimide resin, polyamide resin, silicone resin, or epoxy resin.

[0072] The first organic layer 260a disposed in the display area DA can cover the source electrode 270a and the drain electrode 270b. The first organic layer 260a disposed in the curved area BA can cover the second dummy pattern 360. That is, the first organic layer 260a can cover the second dummy pattern 360 in the curved area BA.

[0073] The connection electrode 280 can be disposed on the first organic layer 260a in the display area DA. The connection electrode 280 can pass through the first organic layer 260a and can be electrically connected to the drain electrode 270b. For example, the connection electrode 280 can include metal, alloy, metal nitride, conductive metal oxide, and transparent conductive material, etc.

[0074] The transmission line TL can be disposed on the first organic layer 260a in the peripheral region PA, the bending region BA, and the connecting region CA. The transmission line TL can extend from the peripheral region PA to the connecting region CA. According to an embodiment, the material included in the transmission line TL and the material included in the connecting electrode 280 can be the same. That is, the transmission line TL can be disposed on the same layer as the connecting electrode 280 and can be formed simultaneously with the connecting electrode 280.

[0075] The second organic layer 260b can be disposed on the connecting electrode 280 and the first organic layer 260a in the display area DA, and can be disposed on the transmission line TL in the bending area BA, the peripheral area PA, and the connecting area CA. That is, the second organic layer 260b can be completely disposed in the display area DA, the peripheral area PA, the bending area BA, and the connecting area CA, except for the contact hole area for the lower electrode 290. For example, the second organic layer 260b may include an organic insulating material such as phenolic resin, acrylic resin, polyimide resin, polyamide resin, silicone resin, or epoxy resin.

[0076] The lower electrode 290 can be disposed on the second organic layer 260b in the display area DA. The lower electrode 290 can pass through the second organic layer 260b and can be electrically connected to the connecting electrode 280 through a contact hole.

[0077] Pixel defining layer 310 may be disposed on the second organic layer 260b and the lower electrode 290. Pixel defining layer 310 may have an opening that exposes at least a portion of the lower electrode 290. For example, pixel defining layer 310 may comprise an organic insulating material.

[0078] The emitter layer 320 may be disposed on the lower electrode 290. The emitter layer 320 may include at least one functional layer selected from the following: a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

[0079] According to one embodiment, the emitting layer 320 can emit red, green, or blue light. According to another embodiment, the emitting layer 320 can emit white light. When the emitting layer 320 emits white light, it can include a multilayer structure comprising a red emitting layer, a green emitting layer, and a blue emitting layer. Alternatively, the emitting layer 320 can include a single-layer structure comprising red, green, and blue luminescent materials.

[0080] The upper electrode 330 may be disposed on the emissive layer 320 and the pixel defining layer 310. For example, the upper electrode 330 may include a metal, an alloy, a metal nitride, a metal fluoride, a conductive metal oxide, or a combination thereof. For example, the upper electrode 330 may extend continuously across the display area DA. Figure 1The image shows multiple pixel regions PX.

[0081] The encapsulation layer 340 can be disposed on the upper electrode 330. For example, the encapsulation layer 340 can have a stacked structure of inorganic and organic thin films. The encapsulation layer 340 can prevent the lower electrode 290, pixel defining layer 310, and upper electrode 330 from deterioration due to moisture or oxygen penetration. In addition, the encapsulation layer 340 can also perform the function of protecting the lower electrode 290, pixel defining layer 310, and upper electrode 330 from external impacts.

[0082] For example, organic films may include cured polymers such as polyacrylates, epoxy resins, or silicone resins. Inorganic films may include silicon oxide, silicon nitride, silicon carbide, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, or titanium oxide.

[0083] In the display device 100 according to an embodiment, a first dummy pattern 350 comprising polysilicon can be disposed on the buffer layer 220 in the bending region BA, and a second dummy pattern 360 can be disposed to contact the upper surface of the first dummy pattern 350. Therefore, the adhesive strength between the second dummy pattern 360 and the buffer layer 220 can be enhanced by the first dummy pattern 350 disposed between the second dummy pattern 360 and the buffer layer 220. Furthermore, the first dummy pattern 350 and the second dummy pattern 360 can prevent cracks generated in the inorganic layer from propagating to the transmission line TL, and can minimize the concentration of tensile stress on the transmission line TL.

[0084] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Figure 9 , Figure 10 and Figure 11 This is a cross-sectional view illustrating a method for manufacturing a display device according to an embodiment.

[0085] Reference Figure 5 A buffer layer 220 can be formed on a substrate 200, which includes a display region DA, a curved region BA, a peripheral region PA disposed between the display region DA and the curved region BA, and a connection region CA disposed adjacent to the curved region BA. The buffer layer 220 can be formed entirely within the display region DA, the peripheral region PA, the curved region BA, and the connection region CA. The buffer layer 220 can prevent metal atoms or impurities from diffusing into the thin-film transistor. For example, the buffer layer 220 can be formed using inorganic materials such as oxides or nitrides. According to an embodiment, the buffer layer 220 can be formed as a stacked structure in which silicon oxide layers and silicon nitride layers are stacked. Alternatively, the buffer layer 220 can be formed as a single-layer structure including a silicon oxide layer or a silicon nitride layer.

[0086] The substrate 200 may include a first organic film 200a, a first barrier layer 210a, a second organic film 200b, and a second barrier layer 210b. According to an embodiment, the first barrier layer 210a may be formed on the first organic film 200a, the second organic film 200b may be formed on the first barrier layer 210a, and the second barrier layer 210b may be formed on the second organic film 200b. For example, each of the first organic film 200a and the second organic film 200b may be formed using polyimide, and each of the first barrier layer 210a and the second barrier layer 210b may be formed using an inorganic material. For example, each of the first barrier layer 210a and the second barrier layer 210b may be formed using silicon oxide, silicon nitride, and silicon oxynitride, etc.

[0087] According to an embodiment, the first barrier layer 210a can be formed as a stacked structure in which an amorphous silicon layer and a planar layer are stacked. Alternatively, the first barrier layer 210a can be formed as a single-layer structure including a silicon oxide layer.

[0088] According to an embodiment, the second barrier layer 210b can be formed as a single-layer structure including a silicon oxide layer.

[0089] An active layer 230 can be formed on the buffer layer 220 in the display area DA. The active layer 230 can be formed using silicon semiconductor or oxide semiconductor. According to an embodiment, the active layer 230 can be formed using polycrystalline silicon. For example, after forming an amorphous silicon layer on the buffer layer 220, the amorphous silicon layer can be crystallized to form a polycrystalline silicon layer.

[0090] For example, amorphous silicon layers can be formed by sputtering, low-pressure chemical vapor deposition (“LPCVD”), or plasma-enhanced chemical vapor deposition (“PECVD”). Amorphous silicon layers can be crystallized by excimer laser annealing or sequential lateral curing.

[0091] Semiconductor patterns can be formed by patterning polycrystalline silicon layers using methods such as photolithography.

[0092] A first dummy pattern 350 can be formed on the buffer layer 220 in the curved region BA. The first dummy pattern 350 can be formed using the same material as the active layer 230. That is, the first dummy pattern 350 can be formed on the same layer as the active layer 230, and can be formed simultaneously with the active layer 230. The first dummy pattern 350 can be formed using polysilicon.

[0093] A first insulating layer 240a can be formed on the buffer layer 220, the active layer 230, and the first dummy pattern 350. The first insulating layer 240a can be completely formed in the display area DA, the peripheral area PA, the curved area BA, and the connection area CA. For example, the first insulating layer 240a can be formed using silicon oxide, silicon nitride, and silicon carbide.

[0094] A gate electrode 250 can be formed on the first insulating layer 240a in the display area DA. The gate electrode 250 can be formed to overlap with the active layer 230. For example, the gate electrode 250 can be formed using metals, alloys, metal nitrides, conductive metal oxides, and transparent conductive materials.

[0095] A second insulating layer 240b can be formed on the first insulating layer 240a and the gate electrode 250. The second insulating layer 240b can be formed to cover the gate electrode 250. The second insulating layer 240b can be completely formed in the display region DA, the peripheral region PA, the curved region BA, and the connection region CA. For example, the second insulating layer 240b can be formed using silicon oxide, silicon nitride, and silicon oxynitride.

[0096] Reference Figure 6 Contact holes exposing the active layer 230 can be formed by removing portions of the first insulating layer 240a and the second insulating layer 240b disposed in the display area DA, respectively.

[0097] The upper surface of the first dummy pattern 350 can be exposed by removing a portion of the first insulating layer 240a and a portion of the second insulating layer 240b disposed in the bending region BA of the first dummy pattern 350. Therefore, the first insulating layer 240a can expose the upper surface of the first dummy pattern 350, and the second insulating layer 240b can have an opening 243 exposing the upper surface of the first dummy pattern 350.

[0098] According to an embodiment, the step of exposing the upper surface of the first dummy pattern 350 by removing portions of the first insulating layer 240a and the second insulating layer 240b disposed in the curved region BA can be performed simultaneously with the step of forming a contact hole by removing portions of the first insulating layer 240a and the second insulating layer 240b disposed in the display region DA. Figure 6 In the middle, opening 243 exposes the upper surface of the first dummy pattern 350 and the first insulating layer 240a. However, referring to... Figure 12 and Figure 13 The opening 243 may expose only the upper surface of the first dummy pattern 350, and may not expose the upper surface of the first insulating layer 240a.

[0099] Reference Figure 7A source electrode 270a and a drain electrode 270b can be formed on the second insulating layer 240b in the display area DA. The source electrode 270a and the drain electrode 270b fill the contact holes formed in the first insulating layer 240a and the second insulating layer 240b, and can be electrically connected to the active layer 230. For example, each of the source electrode 270a and the drain electrode 270b can be formed using a metal alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material.

[0100] A second dummy pattern 360 can be formed in the curved region BA on the first dummy pattern 350 and the second insulating layer 240b. The second dummy pattern 360 can extend from the peripheral region PA, positioned adjacent to the edge of the curved region BA, to the connecting region CA, positioned adjacent to the edge of the curved region BA. The second dummy pattern 360 can be formed to directly contact the exposed upper surface of the first dummy pattern 350. For example, the second dummy pattern 360 can be formed simultaneously with each of the source electrode 270a and the drain electrode 270b using the same material. That is, the second dummy pattern 360 can be formed on the same layer as each of the source electrode 270a and the drain electrode 270b.

[0101] Reference Figure 8 The first organic layer 260a can be formed on the second insulating layer 240b, the source electrode 270a, the drain electrode 270b, and the second dummy pattern 360.

[0102] The first organic layer 260a disposed in the display area DA can be formed to cover the source electrode 270a and the drain electrode 270b. The first organic layer 260a can be formed in the display area DA, the peripheral area PA, the curved area BA, and the connection area CA. The first organic layer 260a can be formed to cover the second dummy pattern 360. That is, the first organic layer 260a can be formed on the second dummy pattern 360 exposed in the curved area BA. For example, the first organic layer 260a may include an organic insulating material such as phenolic resin, acrylic resin, polyimide resin, polyamide resin, silicone resin, or epoxy resin. The first organic layer 260a in the display area DA, the peripheral area PA, the curved area BA, and the connection area CA can be patterned using conventional photolithography techniques to form drain contact holes in the display area DA and to form the first organic layer 260a in the peripheral area PA, the curved area BA, and the connection area CA, respectively.

[0103] Reference Figure 9A connection electrode 280 can be formed on the first organic layer 260a in the display area DA. The connection electrode 280 fills the drain contact hole and can be electrically connected to the drain electrode 270b. For example, the connection electrode 280 can include metals, alloys, metal nitrides, conductive metal oxides, and transparent conductive materials, etc.

[0104] A transmission line TL can be formed on the first organic layer 260a in the peripheral region PA, the bending region BA, and the connecting region CA. The transmission line TL can be formed to extend from the peripheral region PA adjacent to the edge of the bending region BA to the connecting region CA adjacent to the edge of the bending region BA. For example, the transmission line TL can include metals, alloys, metal nitrides, conductive metal oxides, and transparent conductive materials. That is, the transmission line TL can be formed simultaneously with the connecting electrode 280 using the same material, and the transmission line TL can be formed on the same layer as the connecting electrode 280.

[0105] Reference Figure 10 A second organic layer 260b can be formed on the first organic layer 260a disposed in the display area DA, the connecting electrode 280, and the transmission line TL disposed in the curved area BA, the peripheral area PA, and the connecting area CA. That is, the second organic layer 260b can be completely formed in the display area DA, the peripheral area PA, the curved area BA, and the connecting area CA. The second organic layer 260b located in the display area DA can be formed to cover the connecting electrode 280. For example, the second organic layer 260b can include an organic insulating material such as phenolic resin, acrylic resin, polyimide resin, polyamide resin, silicone resin, or epoxy resin.

[0106] Reference Figure 11 Pixel contact holes can be formed in the second organic layer 260b to expose the connection electrode 280. A lower electrode 290 can be formed on the second organic layer 260b in the display area DA. The lower electrode 290 can be connected to the connection electrode 280 through the pixel contact holes. For example, the lower electrode 290 can be formed using metals, alloys, metal nitrides, conductive metal oxides, and transparent conductive materials.

[0107] A pixel defining layer 310 may be formed on the second organic layer 260b and the lower electrode 290. The pixel defining layer 310 may have an opening that exposes at least a portion of the lower electrode 290 in the display area DA. For example, the pixel defining layer 310 may be made of an organic or inorganic material. According to an embodiment, the pixel defining layer 310 may be formed using an organic material.

[0108] An emission layer 320 may be formed on the exposed portion of the lower electrode 290. The emission layer 320 may include at least one functional layer selected from a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

[0109] According to one embodiment, the emitting layer 320 can emit red, green, or blue light. According to another embodiment, the emitting layer 320 can emit white light. When the emitting layer 320 emits white light, it can include a multilayer structure comprising a red emitting layer, a green emitting layer, and a blue emitting layer. Alternatively, the emitting layer 320 can include a single-layer structure comprising red, green, and blue luminescent materials.

[0110] An upper electrode 330 may be formed on the pixel defining layer 310 and the emitter layer 320. The upper electrode 330 may cover the pixel defining layer 310 and the emitter layer 320 in the display area DA. For example, the upper electrode 330 may include a metal, an alloy, a metal nitride, a metal fluoride, a conductive metal oxide, or a combination thereof. For example, the upper electrode 330 may extend continuously across the display area DA. Figure 1 The image shows multiple pixel regions PX.

[0111] An encapsulation layer 340 can be formed on the upper electrode 330. For example, the encapsulation layer 340 can have a stacked structure of inorganic and organic thin films. The encapsulation layer 340 can prevent the lower electrode 290, pixel defining layer 310, and upper electrode 330 from deterioration due to moisture or oxygen penetration. In addition, the encapsulation layer 340 can also perform the function of protecting the lower electrode 290, pixel defining layer 310, and upper electrode 330 from external impacts.

[0112] For example, organic films can be formed using cured polymers such as polyacrylates, epoxy resins, or silicone resins. Inorganic films can be formed using materials such as silicon oxide, silicon nitride, silicon carbide, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, or titanium oxide.

[0113] Therefore, it is possible to manufacture Figure 1 The display device 100.

[0114] In the method of manufacturing the display device 100 according to the embodiment, without using a separate masking process, the process of removing the inorganic layer in the curved region BA can be performed simultaneously with the process of forming source contact holes and drain contact holes in the display region DA, and the second dummy pattern 360 can be formed simultaneously with the process of forming source electrodes 270a and drain electrodes 270b to contact the exposed upper surface of the first dummy pattern 350. Therefore, the manufacturing cost of the display device 100 can be reduced, and the first dummy pattern 350 and the second dummy pattern 360 can prevent cracks generated in the inorganic layer from propagating to the transmission line TL.

[0115] Figure 12 Is with Figure 1 Another example of a display device is a cross-sectional view taken along lines I-I' and II-II'.

[0116] Reference Figure 12 The display device 101 may include a first organic film 200a, a second organic film 200b, a first barrier layer 210a, a second barrier layer 210b, a buffer layer 220, an active layer 230, a gate electrode 250, a first insulating layer 240a, a second insulating layer 240b, a source electrode 270a, a drain electrode 270b, a connecting electrode 280, a first organic layer 260a, a second organic layer 260b, a lower electrode 290, a pixel defining layer 310, an upper electrode 330, an emitter layer 320, an encapsulation layer 340, a first dummy pattern 350, a second dummy pattern 360, and a transmission line TL, etc. Except for the contact areas of the first dummy pattern 350 and the second dummy pattern 360, the display device 101 may be in contact with a reference... Figure 4 The display device 100 described is substantially the same. In the following text, the first dummy pattern 350 and the second dummy pattern 360 will be described in detail.

[0117] The first dummy pattern 350 may be disposed in the curved region BA on the buffer layer 220. According to one embodiment, the first dummy pattern 350 may be disposed in a portion of the curved region BA. According to another embodiment, the first dummy pattern 350 may be disposed entirely in the curved region BA.

[0118] The second dummy pattern 360 can contact the exposed upper surface of the first dummy pattern 350. According to an embodiment, the entire exposed upper surface of the first dummy pattern 350 can contact the lower surface of the second dummy pattern 360. Therefore, the second dummy pattern 360 can be firmly adhered to the buffer layer 220 via the first dummy pattern 350.

[0119] According to the embodiment of the display device 101, a first dummy pattern 350 comprising polysilicon can be disposed in a curved region BA on a buffer layer 220, and the first dummy pattern 350 can be disposed in a portion of the curved region BA, and the entire exposed upper surface of the first dummy pattern 350 can directly contact the lower surface of the second dummy pattern 360. Therefore, the first dummy pattern 350 and the second dummy pattern 360 can prevent cracks generated in the inorganic layer from propagating to the transmission line TL, and can minimize the concentration of tensile stress on the transmission line TL.

[0120] Figure 13 Is with Figure 1 Another example of a display device is a cross-sectional view taken along lines I-I' and II-II'.

[0121] Reference Figure 13 The display device 102 may include a first organic film 200a, a second organic film 200b, a first barrier layer 210a, a second barrier layer 210b, a buffer layer 220, an active layer 230, a gate electrode 250, a first insulating layer 240a, a second insulating layer 240b, a source electrode 270a, a drain electrode 270b, a connecting electrode 280, a first organic layer 260a, a second organic layer 260b, a lower electrode 290, a pixel defining layer 310, an upper electrode 330, an emitter layer 320, an encapsulation layer 340, a first dummy pattern 350, a second dummy pattern 360, and a transmission line TL, etc. Except for the contact areas of the first dummy pattern 350 and the second dummy pattern 360, the display device 102 may interact with a reference... Figure 4 The display device 100 described is substantially the same. In the following text, the first dummy pattern 350 and the second dummy pattern 360 will be described in detail.

[0122] The first dummy pattern 350 may be disposed in the curved region BA on the buffer layer 220. According to one embodiment, the first dummy pattern 350 may be disposed entirely in the curved region BA. According to another embodiment, the first dummy pattern 350 may extend into a portion of the peripheral region PA and a portion of the connecting region CA.

[0123] The second dummy pattern 360 can contact the exposed upper surface of the first dummy pattern 350. According to an embodiment, the exposed upper surface of the first dummy pattern 350 can contact the entire lower surface of the second dummy pattern 360. Therefore, the adhesion between the second dummy pattern 360 and the buffer layer 220 can be further enhanced.

[0124] In the display device 102 according to an embodiment, a first dummy pattern 350 comprising polysilicon can be disposed in the bending region BA on the buffer layer 220, and the first dummy pattern 350 can be completely disposed in the bending region BA, and the exposed upper surface of the first dummy pattern 350 can contact the entire lower surface of the second dummy pattern 360. Therefore, the first dummy pattern 350 and the second dummy pattern 360 can prevent cracks generated in the inorganic layer from propagating to the transmission line TL, and can minimize the concentration of tensile stress on the transmission line TL.

[0125] The present invention can be applied to a variety of display devices that may include organic light-emitting display devices. For example, the present invention can be applied to many display devices such as those for vehicles, ships and airplanes, portable communication devices, display devices for exhibitions or information transmission, and medical display devices.

[0126] Although specific embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Therefore, the inventive concept is not limited to such embodiments, but is intended to be broader in scope as will be apparent to those skilled in the art from the appended claims and various obvious modifications and equivalent arrangements.

Claims

1. A display device, wherein, The display device includes: The substrate includes the display area and the curved area; A buffer layer is disposed on the substrate; A first dummy pattern is disposed on the buffer layer in the curved region; A first insulating layer is disposed on the buffer layer, the first insulating layer exposing the upper surface of the first dummy pattern; A second insulating layer is disposed on the first insulating layer, the second insulating layer having an opening that exposes the upper surface of the first dummy pattern; A second dummy pattern is disposed on the upper surface of the first dummy pattern exposed through the opening; and A transmission line is disposed on the second dummy pattern.

2. The display device according to claim 1, wherein, The substrate includes: First organic membrane; A first barrier layer is disposed on the first organic membrane; A second organic film is disposed on the first barrier layer; and A second barrier layer is disposed on the second organic membrane.

3. The display device according to claim 1, wherein, The display device further includes: The source electrode and drain electrode are disposed on the second insulating layer in the display area. The material included in the second dummy pattern is the same as the material included in each of the source electrode and the drain electrode.

4. The display device according to claim 1, wherein, The second dummy pattern contacts the exposed upper surface of the first dummy pattern.

5. The display device according to claim 4, wherein, The substrate also includes: The peripheral area is located between the display area and the curved area; and The connecting region is configured to be adjacent to the curved region, and The second dummy pattern extends from the edge of the outer region to the edge of the connecting region.

6. The display device according to claim 4, wherein, The display device further includes: The first organic layer is disposed on the second dummy pattern; The transmission line is disposed on the first organic layer.

7. The display device according to claim 1, wherein, The display device further includes: A second organic layer is disposed on the transmission line.

8. The display device according to claim 7, wherein, The display device further includes: The lower electrode is disposed on the second organic layer in the display area; An emission layer is disposed on the lower electrode; and The upper electrode is disposed on the emitter layer.

9. The display device according to claim 1, wherein, The display device further includes: An active layer is disposed on the buffer layer in the display area. The material included in the first dummy pattern is the same as the material included in the active layer.

10. The display device according to claim 9, wherein, The first dummy pattern includes silicon semiconductors.

11. The display device according to claim 1, wherein, The first dummy pattern includes polycrystalline silicon.

12. A method for manufacturing a display device, wherein, The method includes: Provides a base including a display area and a curved area; A buffer layer is formed on the substrate; A first dummy pattern is formed on the buffer layer in the curved region; A first insulating layer covering the first dummy pattern is formed on the buffer layer; A second insulating layer is formed on the first insulating layer; By removing each of the first and second insulating layers, the upper surface of the first dummy pattern is exposed; A second dummy pattern is formed on the exposed upper surface of the first dummy pattern; and A transmission line is formed on the second dummy pattern.

13. The method according to claim 12, wherein, The substrate includes: First organic membrane; A first barrier layer is formed on the first organic film; A second organic film is formed on the first barrier layer; and A second barrier layer is formed on the second organic membrane.

14. The method according to claim 12, wherein, The method further includes: In the display area, source and drain electrodes are formed on the second insulating layer. The material included in the second dummy pattern is the same as the material included in each of the source electrode and the drain electrode.

15. The method according to claim 12, wherein, The second dummy pattern contacts the exposed upper surface of the first dummy pattern.

16. The method according to claim 15, wherein, The substrate also includes: The peripheral area is located between the display area and the curved area; and The connecting region is configured to be adjacent to the curved region, and The second dummy pattern extends from the edge of the outer region to the edge of the connecting region.

17. The method according to claim 12, wherein, The method further includes: A first organic layer is formed on the second dummy pattern; The transmission line is formed on the first organic layer; and A second organic layer is formed on the transmission line.

18. The method according to claim 12, wherein, The method further includes: An active layer is formed on the buffer layer in the display area. The material included in the first dummy pattern is the same as the material included in the active layer.

19. The method according to claim 18, wherein, The first dummy pattern includes silicon semiconductors.

20. The method according to claim 19, wherein, The first dummy pattern includes polycrystalline silicon.

21. A display device, wherein, The display device includes: The substrate includes both the display area and the non-display area; A buffer layer is disposed on the substrate in the display area and the non-display area; A first dummy pattern is disposed on the buffer layer in the non-display area, and the first dummy pattern is electrically levitated. A first insulating layer is disposed on the buffer layer, the first insulating layer exposing the upper surface of the first dummy pattern; A second insulating layer is disposed on the first insulating layer, the second insulating layer having an opening that exposes the upper surface of the first dummy pattern; A second dummy pattern is disposed on the upper surface of the first dummy pattern exposed through the opening; and A transmission line is disposed on the second dummy pattern.

22. The display device according to claim 21, wherein, The display device further includes a thin-film transistor, the thin-film transistor comprising: Active layer; A gate electrode overlapping the active layer, and a first insulating layer disposed between the active layer and the gate electrode; and The source electrode and drain electrode are connected to the active layer via contact holes formed through the first insulating layer and the second insulating layer, and The first dummy pattern and the active layer are disposed on the same layer, and the first dummy pattern and the active layer are formed of the same material.

23. The display device according to claim 22, wherein, The second dummy pattern is in direct contact with the first dummy pattern.

24. The display device according to claim 23, wherein, The second dummy pattern is disposed on the same layer as the source electrode and the drain electrode, and the second dummy pattern is formed of the same material as the source electrode and the drain electrode.

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