High-voltage integrated circuits and semiconductor circuits

Abstract

The application relates to a high-voltage integrated circuit and a semiconductor circuit, wherein the high-voltage integrated circuit comprises a plurality of half-bridge drive circuit modules and a signal generation module connected with each half-bridge drive module, wherein the signal generation module comprises a first output end and a second output end, the first output end and the second output end are connected with a high-voltage signal input end and a low-voltage signal input end of the half-bridge drive circuit module respectively, the signal generation module generates a sinusoidal PWM signal, and outputs sinusoidal PWM signals with opposite phases through the first output end and the second output end. In this way, the generated sinusoidal PWM signal does not need to be input by an external MCU, so that when the high-voltage integrated circuit is applied to the semiconductor circuit, the high-voltage integrated circuit can realize driving of a motor load by itself, can be applied to some scenes with simple motor driving functions, such as scenes only needing a fixed rotating speed, does not need an external MCU, so that the design of the whole control circuit can be simplified, and the cost of the controller is reduced.

Description

Technical Field

[0001] The present invention relates to a high-voltage integrated circuit and a semiconductor circuit, belonging to the technical field of semiconductor circuit applications. Background Art

[0002] A high-voltage integrated circuit (HVIC) converts MCU signals into signals to drive IGBTs. HVICs integrate PMOS transistors, NMOS transistors, triodes, diodes, voltage regulators, resistors, and capacitors to form circuits such as Schmitt transistors, low-voltage level switches, high-voltage level switches, pulse generators, dead-band circuits, interlock circuits, delay circuits, filtering circuits, overcurrent protection, overtemperature protection, and undervoltage protection. The HVIC receives control signals from the MCU to drive the subsequent IGBTs or MOS transistors and transmits system status detection signals back to the MCU. It is a key chip within semiconductor circuits. Currently, HVICs operate only passively based on signals from an external MCU and cannot generate sinusoidal waves internally. Therefore, they must be coupled with a higher-speed external MCU to generate sinusoidal PWM signals for the semiconductor circuit to drive loads such as motors. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to solve the problem that the existing high-voltage integrated circuit requires an external high-speed MCU to output a sine wave PWM signal to drive the motor load.

[0004] The present invention first proposes a high-voltage integrated circuit, which includes multiple half-bridge drive circuit modules and a signal generating module connected to each half-bridge drive module, wherein the signal generating module includes a first output end and a second output end, and the first output end and the second output end are respectively connected to the high-voltage signal input end and the low-voltage signal input end of the half-bridge drive circuit module. The signal generating module generates a sinusoidal PWM signal and outputs the sinusoidal PWM signals with opposite phases through the first output end and the second output end.

[0005] Optionally, the signal generation module includes a sine signal generator, a triangle wave generator, a comparator and a NOT gate.

[0006] The output end of the sine signal generator is connected to the non-inverting input end of the comparator, the output end of the triangle wave generator is connected to the inverting input end of the comparator, the output end of the comparator, the first output end of the signal generating module and the input end of the NOT gate are connected in common, and the output end of the NOT gate is the second output end of the signal generating module.

[0007] Optionally, the signal generating module further comprises a Schmitt trigger, an input end of the Schmitt trigger is connected to an output end of the comparator, an output end of the Schmitt trigger, the first output end of the signal generating module and an input end of the NAND gate are connected in common, and an output end of the NAND gate is the second output end of the signal generating module.

[0008] Optionally, the signal generating module further comprises an enable control end, and the signal generating module further comprises an AND gate, an output end of the Schmitt trigger is connected to an input end of the AND gate, another input end of the AND gate is the enable control end, an output end of the AND gate, the first output end of the signal generating module and an input end of the NAND gate are connected in common, and an output end of the NAND gate is the second output end of the signal generating module.

[0009] Optionally, the sine signal generator comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor, a second capacitor and a first operational amplifier, one end of the first resistor, one end of the third resistor and one end of the first capacitor are connected in common, the other end of the first resistor and one end of the second resistor are connected to an inverting input end of the first operational amplifier, the other end of the third resistor, the other end of the first capacitor and one end of the fourth resistor are connected to a non-inverting input end of the first operational amplifier, the other end of the fourth resistor is connected to one end of the second capacitor, the other end of the second resistor, the other end of the second capacitor and an output end of the first operational amplifier are connected to an output end of the sine signal generator.

[0010] Optionally, the triangular wave generator comprises a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a third capacitor and a second operational amplifier, one end of the fifth resistor is connected to a positive electrode of a low-voltage direct-current power supply, the other end of the fifth resistor, one end of the sixth resistor and one end of the seventh resistor are connected to a non-inverting input end of the second operational amplifier, the other end of the sixth resistor is grounded, one end of the third capacitor is grounded, the other end of the third capacitor, one end of the ninth resistor and an inverting input end of the second operational amplifier are connected to an output end of the triangular wave generator, the other end of the ninth resistor, one end of the eighth resistor and an output end of the second operational amplifier and the other end of the seventh resistor are connected in common, and the other end of the eighth resistor is connected to the positive electrode of the low-voltage direct-current power supply.

[0011] Optionally, each half-bridge driving module comprises a low-voltage driving area circuit and a high-voltage driving area circuit, the first input end and the second input end of the low-voltage driving area circuit are high-voltage signal input ends and low-voltage signal input ends of the half-bridge driving module, the first output end and the second output end of the low-voltage driving area circuit are connected to the first input end and the second input end of the high-voltage driving area circuit respectively, and the output end of the high-voltage driving area circuit is an output end of the half-bridge driving module.

[0012] The application further provides a semiconductor circuit, which comprises the high-voltage integrated circuit and an inverter circuit, and the output end of the high-voltage integrated circuit is connected to the inverter circuit.

[0013] The high-voltage integrated circuit of the present application comprises a plurality of half-bridge drive circuit modules and a signal generation module connected with each half-bridge drive module, wherein the signal generation module comprises a first output end and a second output end, the first output end and the second output end are connected with the high-voltage signal input end and the low-voltage signal input end of the half-bridge drive circuit module respectively, the signal generation module generates a sinusoidal PWM signal, and outputs sinusoidal PWM signals with opposite phases through the first output end and the second output end. In this way, the generated sinusoidal PWM signal does not need to be input by an external MCU, so that when the high-voltage integrated circuit is applied to a semiconductor circuit, it can itself realize the driving of the motor load, and can be applied to some simple motor driving scenes, such as scenes that only require a fixed speed, without the need for an external MCU, thereby simplifying the design of the entire control circuit and reducing the cost of the controller. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 The figure is a block diagram of the high-voltage integrated circuit of the embodiment of the present application;

[0015] Figure 2 The figure is a simplified circuit schematic diagram of the half-bridge drive circuit module in the medium-high voltage integrated circuit; Figure 1

[0016] Figure 3 The figure is a simplified circuit schematic diagram of the signal generation module of the embodiment of the present application;

[0017] Figure 4 The figure is a simplified circuit schematic diagram of the sinusoidal signal generator; Figure 3

[0018] The figure is a simplified circuit schematic diagram of the triangular wave generator. Figure 5 DETAILED DESCRIPTION Figure 3 It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict in structure or function. The present application will be described in detail below according to examples.

[0019] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict in structure or function. The present application will be described in detail below according to examples.

[0020] ​​The semiconductor circuit mentioned in the present application is a circuit module integrating power switching devices and high-voltage driving circuits and the like together and sealed and packaged on the outside, which is widely applied in the field of power electronics, such as frequency converters driving motors, various inverter voltages, frequency conversion speed regulation, metallurgical machinery, electric traction, frequency conversion household appliances and the like. The semiconductor circuit herein has various other names, such as modular intelligent power system (MIPS), intelligent power module (IPM), or hybrid integrated circuit, power semiconductor module, power module and the like.

[0021] The present application first proposes a high-voltage integrated circuit, such as Figure 1 As shown in the figure, the high-voltage integrated circuit comprises a plurality of half-bridge driving circuit modules 200 and a signal generating module 100 connected with each half-bridge driving module, wherein the signal generating module 100 comprises a first output end and a second output end, the first output end and the second output end are connected with the high-voltage signal input end HIN and the low-voltage signal input end HIN of the half-bridge driving circuit module 200 respectively, the signal generating module 100 generates sinusoidal PWM signals and outputs sinusoidal PWM signals with opposite phases through the first output end and the second output end. Wherein the high-voltage integrated circuit contains at least two half-bridge driving circuit modules 200, and usually contains three half-bridge driving circuit modules 200 to drive three-phase inverter circuits in the semiconductor circuit, the input end of each half-bridge driving module comprises a high-voltage signal input end HIN and a low-voltage signal input end HIN, and the output end comprises a floating high-voltage positive VB, a floating high-voltage negative VS, an upper bridge arm driving output HO, a low-voltage power supply positive VCC, a low-voltage power supply negative GND and a lower bridge arm driving output LO. The signal generating module 100 generates sinusoidal PWM signals, and the signal generating module 100 is connected in parallel with the high-voltage signal input end HIN and the low-voltage signal input end HIN through two output ends to output sinusoidal PWM signals with opposite phases, so that the generated sinusoidal PWM signals do not need to be inputted by an external MCU, so that when the high-voltage integrated circuit is applied to the semiconductor circuit, it can realize driving the motor load itself, and can be realized in some scenes with relatively simple motor driving function, such as only needing a fixed speed scene, without the need of external MCU, so as to simplify the design of the whole control circuit, and also reduce the cost of the controller.

[0022] In some embodiments of the present application, as Figure 3As shown, the signal generating module 100 comprises a sine signal generator 110, a triangular wave generator 120, a comparator 130 and a NOT gate 160, wherein an output terminal of the sine signal generator 110 is connected to a non-inverting input terminal of the comparator 130, an output terminal of the triangular wave generator 120 is connected to an inverting input terminal of the comparator 130, an output terminal of the comparator 130, a first output terminal OUT1 of the signal generating module 100 and an input terminal of the NOT gate 160 are connected in common, and an output terminal of the NOT gate 160 is a second output terminal OUT2 of the signal generating module 100. When the sine wave level output by the sine signal generator 110 is higher than the triangular wave level, the comparator 130 outputs a high level, and when the sine wave level output by the sine signal generator 110 is lower than the triangular wave level, the comparator 130 outputs a low level, so as to realize output of a sine PWM signal from the comparator 130. One of the sine PWM signals output from the output terminal of the comparator 130 is inverted by the NOT gate 160, so that two sine PWM signals with opposite phases are output from the first output terminal OUT1 and the second output terminal OUT2.

[0023] Further, in some embodiments of the present application, as shown in Figure 3 The signal generating module 100 further comprises a Schmitt trigger 140, an input terminal of the Schmitt trigger 140 is connected to an output terminal of the comparator 130, an output terminal of the Schmitt trigger 140, the first output terminal OUT1 of the signal generating module 100 and the input terminal of the NOT gate 160 are connected in common, and the output terminal of the NOT gate 160 is the second output terminal OUT2 of the signal generating module 100. By means of the Schmitt trigger 140, the sine PWM signal output by the comparator 130 is shaped, so as to filter interference noise in the signal, and make the output sine PWM signal purer.

[0024] Further, in some embodiments of the present application, as shown in Figure 3As shown, the signal generating module 100 further comprises an enable control terminal S-EN, and the signal generating module 100 further comprises an AND gate 150, one input terminal of the AND gate 150 being connected to the output terminal of the Schmitt trigger 140, the other input terminal of the AND gate 150 being the enable control terminal S-EN, the output terminal of the AND gate 150, the first output terminal of the signal generating module 100 and the input terminal of a NOT gate 160 being connected in common, and the output terminal of the NOT gate 160 being the second output terminal of the signal generating module 100. By connecting the AND gate 150 to the output terminal of the Schmitt trigger 140, the signal generating module 100 is provided with the enable control terminal S-EN, when the enable control terminal S-EN is at a high level, the signal generating module 100 normally outputs the sine PWM signal, and when the enable control terminal S-EN is at a low level, the AND gate 150 outputs a fixed low level, so that the signal generating module 100 outputs a shutdown. By providing the enable control terminal S-EN, the signal generating module 100 can be controllably turned on and off to output the sine PWM signal, so that the external MCU can realize more complex control when the signal generating module 100 is turned off to output the sine PWM signal.

[0025] Specifically, in some embodiments of the present application, as shown in Figure 4 As shown, the sine signal generator 110 comprises a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first capacitor C1, a second capacitor C2 and a first operational amplifier U1; one end of the first resistor R1, one end of the third resistor R3 and one end of the first capacitor C1 are connected in common, the other end of the first resistor R1 and one end of the second resistor R2 being connected to the inverting input terminal of the first operational amplifier U1, the other end of the third resistor R3, the other end of the first capacitor C1 and one end of the fourth resistor R4 being connected to the non-inverting input terminal of the first operational amplifier U1, one end of the fourth resistor R4 being connected to one end of the second capacitor C2, the other end of the second resistor R2, the other end of the second capacitor C2 and the output terminal of the first operational amplifier U1 being connected in common to the output terminal of the sine signal generator 110. The fourth resistor R4 and the second capacitor C2 constitute a positive feedback circuit, and the frequency of the sine signal wave output by the sine signal generator 110 can be changed by adjusting the parameters of the fourth resistor and the second capacitor C2.

[0026] Specifically, in some embodiments of the present application, as shown in Figure 5As shown, the triangular wave generator 120 includes: a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a third capacitor C3, and a second operational amplifier U2. One end of the fifth resistor R5 is connected to the positive electrode of a low-voltage DC power supply. The other end of the fifth resistor R5, one end of the sixth resistor R6, and one end of the seventh resistor R7 are connected to the non-inverting input of the second operational amplifier U2. The other end of the sixth resistor R6 is grounded. One end of the third capacitor C3 is grounded. The other end of the third capacitor C3, one end of the ninth resistor R9, and the inverting input of the second operational amplifier U2 are connected to the output of the triangular wave generator 120. The other end of the ninth resistor R9, one end of the eighth resistor R8, the output of the second operational amplifier U2, and the other end of the seventh resistor R7 are connected to each other. The other end of the eighth resistor R8 is connected to the positive electrode of the low-voltage DC power supply. The seventh resistor R7 forms a positive feedback loop, and the third capacitor C3 forms an integrating circuit. The frequency of the triangular wave signal output by the triangular wave generator 120 can be changed by adjusting the parameters of the third capacitor C3 and the seventh resistor R7.

[0027] It is worth noting that the above embodiments only illustrate specific circuits of the sine signal generator 110 and the triangle wave generator 120 , and other existing circuits may also be used to generate sine signal waves and triangle waves.

[0028] Specifically, in some embodiments of the present invention, Figure 2 As shown, each half-bridge driver module includes a low-voltage driver area circuit 210 and a high-voltage driver area circuit 230, wherein the low-voltage driver area circuit 210 operates under low voltage conditions, and its power supply is a low-voltage direct current such as a low voltage of about 15V, while the high-voltage driver area circuit 230 operates under high-voltage conditions, and its power supply is a high-voltage direct current of about 300V.

[0029] Specifically, the low-voltage driving area circuit 210 comprises a first Schmitt trigger 203, a first filter 205, a first level converter 206, a second Schmitt trigger 204, a second filter 207, a second level converter 208, a dead zone and interlock controller 209, a pulse generator 211, a low-voltage protector 212, a delay device 213, a fourth NAND gate 214, and a low-voltage output driving unit 215. The first Schmitt trigger 203, the first filter 205, and the first level converter 206 are connected in sequence, the input end of the first Schmitt trigger 203 is the high-voltage signal input end HIN of the half-bridge driving module, and the output end of the first level converter 206 is connected to the first input end of the dead zone and interlock controller 209. The second Schmitt trigger 204, the second filter 207, and the second level converter 208 are connected in sequence, the input end of the second Schmitt trigger 204 is the low-voltage signal input end LIN of the half-bridge driving module, and the output end of the second level converter 208 is connected to the second input end of the dead zone and interlock controller 209. The first output end of the dead zone and interlock controller 209 is connected to the first input end of the pulse generator 211, the second input end of the pulse generator 211 is connected to the first output end of the first low-voltage protection unit, the first output end and the second output end of the pulse generator 211 are respectively connected to the first input end and the second input end of the high-voltage driving area circuit 230, the second output end of the dead zone and interlock controller 209 is connected to the input end of the delay device 213, the output end of the delay device 213 is connected to the second input end of the fourth NAND gate 214, the second output end of the first low-voltage protection unit is connected to the first and second input ends of the fourth NAND gate 214, the output end of the fourth NAND gate 214 is connected to the input end of the low-voltage output driving unit 215, the positive power supply of the low-voltage output driving unit 215 is the positive low-voltage power supply VCC of the half-bridge driving circuit module 200, the negative power supply of the low-voltage output driving unit 215 is the negative low-voltage power supply GND of the half-bridge driving circuit module 200, and the output end of the low-voltage output driving unit 215 is the lower bridge arm driving output LO of the half-bridge driving circuit module 200.

[0030] Further, the low-voltage driving area circuit 210 further comprises a first ESD unit 201 and a second ESD unit 202, wherein the first ESD unit 201 is connected to the input end of the first Schmitt trigger 203, and the second ESD unit 202 is connected to the input end of the second Schmitt trigger 204, so as to play a role of static electricity suppression on the input signal.

[0031] Specifically, the high-voltage driving area circuit 230 comprises a high-low voltage transition circuit 231, a second low-voltage protection unit 232, a third filter 233, an RS flip-flop 234 and a high-voltage output driving unit 235, wherein the first input end and the second input end of the high-low voltage transition circuit 231 are the first input end and the second input end of the high-voltage driving area circuit 230 respectively, the first output end and the second output end of the high-low voltage transition circuit 231 are connected to the first input end and the second input end of the third filter 233 respectively, the first output end and the second output end of the third filter 233 are connected to the first trigger end and the second trigger end of the RS flip-flop 234 respectively, the output end of the second low-voltage protection unit 232 is connected to the third trigger end of the RS flip-flop 234, the output end of the RS flip-flop 234 is connected to the input end of the high-voltage output driving unit 235, the positive power supply of the high-voltage output driving unit 235 is the floating high-voltage positive pole VB of the half-bridge driving circuit module 200, the negative power supply of the high-voltage output driving unit 235 is the floating high-voltage negative pole VS of the half-bridge driving circuit module 200, and the output end of the high-voltage output driving unit 235 is the upper bridge arm driving output HO of the half-bridge driving circuit module 200.

[0032] The application further provides a semiconductor circuit, which comprises the high-voltage integrated circuit mentioned in the above embodiments and further comprises an inverter circuit, and the output end of the high-voltage integrated circuit is connected to the inverter circuit. The high-voltage integrated circuit is provided with three signal generation modules 100 corresponding to the three half-bridge driving circuit modules 200, and the high-voltage signal input end and the low-voltage signal input end of each half-bridge driving circuit module 200 are connected to the first output end and the second output end of the signal generation module 100 respectively, so as to output three-phase upper and lower bridge arm driving signals to drive the switching tubes of the three-phase bridge arms of the inverter to work. By arranging the signal generation module 100 corresponding to each half-bridge driving circuit module 200 in the high-voltage integrated circuit, the high-voltage integrated circuit can independently generate sinusoidal PWM signals, so that the DC motor load can be independently driven without the output control signal of the MCU, thereby simplifying the circuit design of the motor controller and reducing the cost of the controller.

[0033] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0034] In the description of the application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the application.

[0035] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.

[0036] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0037] In the present application, unless otherwise explicitly specified and limited, the first feature "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0038] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as a limitation on the present application, and those skilled in the art can make changes, modifications, replacements and variations to the above embodiments within the scope of the present application.

Claims

1. A high-voltage integrated circuit, characterized in that: The high-voltage integrated circuit includes a plurality of half-bridge drive circuit modules and a signal generating module connected to each half-bridge drive module, wherein the signal generating module includes a first output terminal and a second output terminal, the first output terminal and the second output terminal are respectively connected to the high-voltage signal input terminal and the low-voltage signal input terminal of the half-bridge drive circuit module, the signal generating module generates a sinusoidal PWM signal and outputs the sinusoidal PWM signal with opposite phases through the first output terminal and the second output terminal; The signal generation module includes a sine signal generator, a triangle wave generator, a comparator and a NOT gate. The output end of the sine signal generator is connected to the non-inverting input end of the comparator, the output end of the triangular wave generator is connected to the inverting input end of the comparator, the output end of the comparator, the first output end of the signal generating module and the input end of the NOT gate are connected in common, and the output end of the NOT gate is the second output end of the signal generating module; The signal generating module also includes a Schmitt trigger, the input end of the Schmitt trigger is connected to the output end of the comparator, the output end of the Schmitt trigger, the first output end of the signal generating module and the input end of the NOT gate are connected in common, and the output end of the NOT gate is the second output end of the signal generating module.

2. The high-voltage integrated circuit according to claim 1, wherein: The signal generating module also includes an enable control terminal, and the signal generating module also includes an AND gate. The output terminal of the Schmitt trigger is connected to an input terminal of the AND gate, and the other input terminal of the AND gate is the enable control terminal. The output terminal of the AND gate, the first output terminal of the signal generating module and the input terminal of the NOT gate are commonly connected, and the output terminal of the NOT gate is the second output terminal of the signal generating module.

3. The high-voltage integrated circuit according to claim 1, wherein: The sinusoidal signal generator includes a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor, a second capacitor and a first operational amplifier; One end of the first resistor, one end of the third resistor, and one end of the first capacitor are connected in common; the other end of the first resistor and one end of the second resistor are connected in common to the inverting input terminal of the first operational amplifier; the other end of the third resistor, the other end of the first capacitor, and one end of the fourth resistor are connected in common to the non-inverting input terminal of the first operational amplifier; the other end of the fourth resistor is connected to one end of the second capacitor; the other end of the second resistor, the other end of the second capacitor, and the output terminal of the first operational amplifier are connected in common to the output terminal of the sinusoidal signal generator.

4. The high-voltage integrated circuit according to claim 1, wherein: The triangular wave generator includes: a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a third capacitor and a second operational amplifier; One end of the fifth resistor is connected to the positive electrode of the low-voltage DC power supply, the other end of the fifth resistor, one end of the sixth resistor, and one end of the seventh resistor are commonly connected to the non-inverting input terminal of the second operational amplifier, the other end of the sixth resistor is grounded, one end of the third capacitor is grounded, the other end of the third capacitor, one end of the ninth resistor, and the inverting input terminal of the second operational amplifier are commonly connected to the output terminal of the triangular wave generator, the other end of the ninth resistor, one end of the eighth resistor, the output terminal of the second operational amplifier, and the other end of the seventh resistor are commonly connected, and the other end of the eighth resistor is connected to the positive electrode of the low-voltage DC power supply.

5. The high-voltage integrated circuit according to claim 1, wherein: Each of the half-bridge driving modules includes a low-voltage driving area circuit and a high-voltage driving area circuit, wherein the first input end and the second input end of the low-voltage driving area circuit are the high-voltage signal input end and the low-voltage signal input end of the half-bridge driving module, the first output end and the second output end of the low-voltage driving area circuit are respectively connected to the first input end and the second input end of the high-voltage driving area circuit, and the output end of the high-voltage driving area circuit is the output end of the half-bridge driving module.

6. A semiconductor circuit, characterized in that: The semiconductor circuit includes the high-voltage integrated circuit according to any one of claims 1 to 5, and further includes an inverter circuit, wherein the output end of the high-voltage integrated circuit is connected to the inverter circuit.

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