A HJT solar cell and its manufacturing equipment and manufacturing method

Abstract

The present invention provides a HJT solar cell and a manufacturing device and method thereof, wherein the HJT solar cell comprises a first collector, a first TCO film, a P-type doped microcrystalline silicon film, a P-type doped hydrogenated amorphous silicon oxide film, a first intrinsic hydrogenated amorphous silicon oxide film, an N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide film, an N-type doped hydrogenated amorphous silicon oxide film, an N-type doped microcrystalline silicon film, a second TCO film and a second collector, which are stacked sequentially from top to bottom. The present invention can simultaneously improve the passivation effect, light transmittance and the matching degree with the TCO film by replacing the intrinsic layer and the doped layer with a hydrogenated silicon oxide film, thereby maximizing the reduction of optical loss. At the same time, a doped microcrystalline silicon film is arranged between the doped hydrogenated amorphous silicon oxide film and the TCO film, thereby reducing the contact resistance with the TCO film. Under the HJT structure provided by the present invention, the conversion efficiency of the battery is significantly improved.

Description

Technical Field

[0001] The present invention belongs to the field of solar cells, and in particular relates to a HJT solar cell and a manufacturing device and method thereof. Background Art

[0002] Intrinsic thin film heterojunction (HJT) solar cells are currently a more efficient crystalline silicon solar cell structure, which combines the characteristics of crystalline silicon cells and silicon-based thin film cells, and has the advantages of short manufacturing process, low process temperature, high conversion efficiency and large power generation.

[0003] Typically, an HJT cell is a symmetrical double-sided structure with an N-type crystalline silicon wafer in the middle. An intrinsic amorphous silicon film and a P-type amorphous silicon film are deposited on the front in sequence to form a PN junction, and an intrinsic amorphous silicon film and an N-type amorphous silicon film are deposited on the back of the silicon wafer in sequence to form a back surface field. At the same time, due to the poor conductivity of amorphous silicon, a transparent conductive film (TCO) is deposited on the outer surfaces on both sides to enhance conductivity, and finally double-sided electrodes are printed to form a complete cell structure. The HJT technology has effectively solved the problem of high carrier recombination losses in the doped layer and substrate contact area of ​​conventional cells. The reason is that the HJT structure cell inserts a layer of intrinsic amorphous silicon between the heterojunction of the doped amorphous silicon layer and the N-type monocrystalline silicon, thereby achieving a good passivation effect on the heterojunction interface. Therefore, the cell can obtain a higher open circuit voltage and excellent conversion capability.

[0004] On the basis of the conventional HJT structure, in order to further improve the performance of HJT batteries, researchers have proposed optimization solutions from different aspects:

[0005] CN110416342A discloses a HJT battery based on metal nanoparticles and a manufacturing method thereof, wherein the battery comprises an N-type silicon wafer, wherein an intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer, an N-type doped amorphous silicon layer, a first metal nanoparticle layer, a light-receiving surface TCO layer, a backlight surface TCO layer, and a metal grid electrode are sequentially arranged on the light-receiving surface and the backlight surface. The invention increases the optical path length in the HJT battery and significantly enhances light absorption by increasing the metal nanoparticle layer and utilizing the near-field enhancement effect caused by the LSP resonance generated by the metal nanoparticles and light and the scattering effect of the particles, especially in the 700nm-1100nm band, significantly improving the photocurrent, thereby improving the short-circuit current and external quantum efficiency, and improving the photoelectric conversion efficiency.

[0006] CN114695576A discloses a multi-intrinsic layer amorphous silicon passivation layer structure for HJT cells. By optimizing the structure of the amorphous silicon intrinsic layer for HJT cells, a multi-layer intrinsic layer structure is adopted to strengthen the passivation effect of the intrinsic layer, and epitaxial silicon can be effectively prevented from being formed during the deposition of the hydrogenated amorphous silicon intrinsic layer. Each intrinsic layer plays a role in improving different electrical performance parameters, which can further optimize the electrical performance of the HJT cell.

[0007] CN112713212A discloses a HJT battery based on a double-layer transparent conductive oxide film and a manufacturing method thereof, the manufacturing method comprising sequentially manufacturing an intrinsic amorphous silicon layer, an N-type doped amorphous silicon layer, a P-type doped amorphous silicon layer, a first transparent conductive oxide layer, a second transparent conductive oxide layer and a metal grid electrode on the light-receiving surface and the backlight surface of an N-type silicon wafer. By optimizing the transmittance and conductivity of the two layers of transparent conductive oxide films respectively, the transparent conductive oxide film as a whole takes into account the balance of transmittance and conductivity, and the photoelectric performance of the transparent conductive oxide film as a whole is improved, and the fill factor is greatly improved while ensuring the short-circuit current of the battery, thereby greatly improving the conversion efficiency of the HJT battery.

[0008] The above schemes are optimized by adding additional functional layers, but they still use amorphous silicon layers to form the basic battery structure. Although the intrinsic amorphous silicon thin film layer can passivate the interface well, studies have found that the intrinsic amorphous silicon thin film layer has disadvantages such as light absorption and harsh manufacturing process conditions. Similarly, for doped amorphous silicon thin films, the refractive index mismatch between it and the TCO layer and the large parasitic absorption of light also limit the improvement of battery performance. Therefore, it is necessary to find more suitable materials to form a new heterojunction battery structure, thereby further promoting the development of HJT batteries. Summary of the invention

[0009] In view of the problems existing in the prior art, the object of the present invention is to provide a HJT solar cell and its manufacturing equipment and manufacturing method, wherein the solar cell comprises a first collector, a first TCO film, a P-type doped microcrystalline silicon film, a P-type doped hydrogenated amorphous silicon oxide film, a first intrinsic hydrogenated amorphous silicon oxide film, an N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide film, an N-type doped hydrogenated amorphous silicon oxide film, an N-type doped microcrystalline silicon film, a second TCO film and a second collector, which are stacked sequentially from top to bottom. The present invention replaces the material of the intrinsic layer and the doped layer with a hydrogenated silicon oxide film, which can effectively improve the passivation effect, light transmittance and the matching degree with the refractive index of the TCO film, and minimizes the optical loss, which is conducive to improving the open circuit voltage and short circuit current. At the same time, a doped microcrystalline silicon film is arranged between the doped hydrogenated amorphous silicon oxide film and the TCO film, which can reduce the contact resistance with the TCO film and effectively improve the fill factor. Under the HJT structure provided by the present invention, the conversion efficiency of the battery is significantly improved.

[0010] To achieve this object, the present invention adopts the following technical solutions:

[0011] In a first aspect, the present invention provides an HJT solar cell, comprising an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide film, a P-type doped hydrogenated amorphous silicon oxide film, a P-type doped microcrystalline silicon film, a first TCO film and a first collector are sequentially stacked on a front side of the N-type silicon wafer from inside to outside; and a second intrinsic hydrogenated amorphous silicon oxide film, an N-type doped hydrogenated amorphous silicon oxide film, an N-type doped microcrystalline silicon film, a second TCO film and a second collector are sequentially stacked on a back side of the N-type silicon wafer from inside to outside.

[0012] Compared with the prior art, the present invention replaces the material of the intrinsic layer and the doped layer with a hydrogenated silicon oxide film, which can effectively improve the light transmittance of each film layer at the same time, wherein the passivation effect of the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film is improved, which is beneficial to improving the open circuit voltage of the battery; the matching degree of the refractive index of the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film with the corresponding TCO film is optimized, which minimizes the optical loss and is beneficial to the short-circuit current of the battery; at the same time, a doped microcrystalline silicon film is arranged between the doped hydrogenated amorphous silicon oxide film and the TCO film as an additional doping layer, which can reduce the contact resistance with the TCO film and effectively improve the fill factor of the battery; therefore, under the HJT structure provided by the present invention, the conversion efficiency of the obtained solar cell is significantly improved.

[0013] It should be noted that when the P-type and / or N-type doped microcrystalline silicon described in the present invention is replaced with a film made of doped amorphous silicon, the conductivity will be affected; if it is replaced with a film made of microcrystalline silicon oxide, the contact resistance between the film and the TCO will increase. Both replacement methods will affect the conversion efficiency of the cell. Therefore, the doped microcrystalline silicon of the present invention can achieve the best comprehensive effect in this HJT structure.

[0014] The front side of the N-type silicon wafer of the present invention refers to the light-receiving side, and the back side of the N-type silicon wafer refers to the backlight side.

[0015] The following are preferred technical solutions of the present invention, but are not intended to be limitations of the technical solutions provided by the present invention. Through the following technical solutions, the technical objectives and beneficial effects of the present invention can be better achieved and realized.

[0016] As a preferred technical solution of the present invention, the thickness of the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film are both 10 to 15 nm, for example, 10 nm, 10.5 nm, 11 nm, 11.5 nm, 12 nm, 12.5 nm, 13 nm, 13.5 nm, 14 nm, 14.5 nm or 15 nm, but are not limited to the listed values, and other unlisted values ​​within the above numerical range are also applicable.

[0017] Preferably, the thickness of the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film are both 5 to 10 nm, for example, 5 nm, 5.5 nm, 6 nm, 6.5 nm, 7 nm, 7.5 nm, 8 nm, 8.5 nm, 9 nm, 9.5 nm or 10 nm, but are not limited to the listed values, and other unlisted values ​​within the above numerical range are also applicable.

[0018] Preferably, the thickness of the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film are both 10 to 15 nm, for example, 10 nm, 10.5 nm, 11 nm, 11.5 nm, 12 nm, 12.5 nm, 13 nm, 13.5 nm, 14 nm, 14.5 nm or 15 nm, but are not limited to the listed values, and other unlisted values ​​within the above numerical range are also applicable.

[0019] The thickness of each thin film in the present invention should be within an appropriate range. Too thick or too thin will affect the conversion efficiency. For example, if the thickness of the doped layer is too thick, it will increase the loss of sunlight passing through the film layer and affect the short-circuit current; if the thickness of the doped layer is too thin, it will affect the conductivity; if the thickness of the intrinsic layer is too thin, the dangling bonds on the surface of the silicon wafer cannot be completely passivated, affecting the passivation effect; if the thickness of the intrinsic layer is too thick, the strength of the built-in electric field is reduced. Based on the above content, technicians in this field can reasonably adjust and select the thickness of each thin film and its matching relationship according to actual needs.

[0020] In a second aspect, the present invention provides a manufacturing device used for the HJT solar cell described in the first aspect, the manufacturing device comprising a Cat-CVD device, the Cat-CVD device comprising a first process chamber and a first buffer chamber, a second process chamber and a second buffer chamber, a third process chamber and a third buffer chamber, a fourth process chamber and a fourth buffer chamber, and a fifth process chamber and a fifth buffer chamber, so as to realize the sequential manufacturing of different types of thin films.

[0021] As a preferred technical solution of the present invention, a preheating chamber is arranged before the first process chamber.

[0022] Preferably, a hot wire is provided in the first process chamber for decomposing raw materials; the second process chamber, the third process chamber, the fourth process chamber and the fifth process chamber are all configured the same as the first process chamber.

[0023] In the present invention, a buffer chamber is arranged behind each process chamber, so that the process environment and atmosphere between two adjacent process chambers do not affect each other.

[0024] In a third aspect, the present invention provides a method for manufacturing a HJT solar cell, the manufacturing method using the manufacturing device according to the second aspect, the manufacturing method comprising the following steps:

[0025] (1) Preheating the double-sided textured N-type silicon wafer;

[0026] (2) transferring the silicon wafer into a first process chamber, respectively forming the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film on both side surfaces of the N-type silicon wafer, and then transferring the silicon wafer into a first buffer chamber for buffering;

[0027] (3) transferring the film into a second process chamber to manufacture the P-type doped hydrogenated amorphous silicon oxide film on the first intrinsic hydrogenated amorphous silicon oxide film, and then transferring the film into a second buffer chamber for buffering; then transferring the film into a third process chamber to manufacture the P-type doped microcrystalline silicon film on the P-type doped hydrogenated amorphous silicon oxide film, and then transferring the film into a third buffer chamber for buffering;

[0028] (4) transferring the N-type doped hydrogenated amorphous silicon oxide film to the fourth process chamber to form the N-type doped hydrogenated amorphous silicon oxide film on the second intrinsic hydrogenated amorphous silicon oxide film, and then transferring the N-type doped microcrystalline silicon film to the fourth buffer chamber for buffering; then transferring the N-type doped hydrogenated amorphous silicon oxide film to the fifth process chamber to form the N-type doped microcrystalline silicon film on the N-type doped hydrogenated amorphous silicon oxide film, and then transferring the N-type doped microcrystalline silicon film to the fifth buffer chamber for buffering;

[0029] (5) manufacturing a first TCO film and a second TCO film on the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film respectively;

[0030] (6) manufacturing a first collector and a second collector on the first TCO film and the second TCO film respectively to obtain a HJT solar cell;

[0031] Among them, step (3) and step (4) are performed in no particular order.

[0032] In the present invention, the manufacturing of the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film is not in any particular order, and on the basis that the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film have been prepared, the manufacturing of the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film is also not in any particular order.

[0033] In the Cat-CVD equipment described in the present invention, in order to prevent the process chambers for preparing films of different doping types from being affected by cross-gassing, it is preferred to complete the manufacture of each film of the same doping type in sequence, and then carry out the manufacture of each film of the next doping type in sequence; specifically, the present invention preferably first manufactures a P-type doped hydrogenated amorphous silicon oxide film and then manufactures a P-type doped microcrystalline silicon film thereon, and then manufactures an N-type doped hydrogenated amorphous silicon oxide film and an N-type doped microcrystalline silicon film in sequence; it is also possible to first manufacture an N-type doped hydrogenated amorphous silicon oxide film and then manufacture an N-type doped microcrystalline silicon film thereon, and then manufacture a P-type doped hydrogenated amorphous silicon oxide film and a P-type doped microcrystalline silicon film in sequence; of course, technicians in this field can select and adjust according to actual conditions, for example, the manufacturing sequence can also be: first manufacture a P-type doped hydrogenated amorphous silicon oxide film and an N-type doped hydrogenated amorphous silicon oxide film, the two are in no particular order, and on this basis, manufacture a P-type doped microcrystalline silicon film and an N-type doped microcrystalline silicon film, the two are in no particular order.

[0034] The manufacturing method adopted in the present invention is preferably the Cat-CVD method, that is, the manufacture of all intrinsic films and doped films is carried out in an integrated Cat-CVD device in which multiple process chambers are connected in sequence. Compared with the PECVD method and equipment used in the prior art, the present invention is easy to adjust the hydrogen content when manufactured in the Cat-CVD device, so it is easier to control the material of the film, and the hydrogen content in the film can reach a higher level. There is no need to perform plasma treatment multiple times to increase the hydrogen content, which avoids damage to the film caused by plasma bombardment of the substrate and the film, thereby optimizing the film quality; on the other hand, when the entire HJT structure is manufactured using an integrated Cat-CVD device, the process is relatively simplified, the film formation rate is significantly improved, and the total process time can be saved 5 to 8 times compared with the PECVD method.

[0035] As a preferred technical solution of the present invention, step (1) also includes preheating the N-type silicon wafer.

[0036] Preferably, the preheating is performed in a preheating chamber.

[0037] Preferably, the preheating temperature in step (1) is 100-200°C, for example 100°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C, 180°C, 190°C or 200°C, but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0038] Preferably, the preheating in step (1) is carried out under a vacuum degree of <0.001Pa.

[0039] Preferably, in step (2), the temperature of the hot wire in the first process chamber is 1500-1900°C, for example, 1500°C, 1550°C, 1600°C, 1650°C, 1700°C, 1750°C, 1800°C, 1850°C or 1900°C, but is not limited to the listed values, and other unlisted values ​​within the above numerical range are also applicable.

[0040] As a preferred technical solution of the present invention, the temperature of the hot wire in the process chamber corresponding to step (3) and step (4) is 1600-2200°C, for example, 1600°C, 1700°C, 1800°C, 1900°C, 2000°C, 2200°C or 2200°C, but is not limited to the listed values, and other unlisted values ​​within the above numerical range are also applicable.

[0041] The process chambers corresponding to step (3) and step (4) respectively refer to the second process chamber, the third process chamber, the fourth process chamber and the fifth process chamber.

[0042] Preferably, the distance from the hot wire in the process chamber corresponding to steps (2)-(4) to the pre-deposition surface is 40-150 mm, for example, 40 mm, 50 mm, 60 mm, 70 mm, 80 mm, 90 mm, 100 mm, 110 mm, 120 mm, 130 mm, 140 mm or 150 mm, etc., but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0043] Preferably, the pressure in the process chamber corresponding to steps (2)-(4) is 1-50Pa, for example 1Pa, 5Pa, 10Pa, 15Pa, 20Pa, 25Pa, 30Pa, 35Pa, 40Pa, 45Pa or 50Pa, but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0044] Preferably, the chamber temperatures of the process chambers corresponding to steps (2)-(4) are all 100-300°C, for example, 100°C, 120°C, 140°C, 160°C, 180°C, 200°C, 220°C, 240°C, 260°C, 280°C or 300°C, but are not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0045] Among the various process parameters in the present invention, the hot wire temperature mainly affects the decomposition efficiency of the reaction gas, affects the film formation rate and the film quality; the substrate temperature is the deposition temperature, which mainly affects the deposition rate, the carrier concentration in the film, the crystallization rate of the film and the crystal orientation; the pressure in the process chamber is the deposition gas pressure, which mainly affects the deposition rate, the carrier concentration of the film and the crystallization rate of the film; the gas flow ratio mainly affects the composition of the film; the hot wire distance affects the surface temperature of the silicon wafer and the efficiency of gas transmission to the silicon wafer surface; based on the above content, technicians in this field can reasonably adjust and select various parameters and their matching relationships according to actual needs.

[0046] Preferably, the buffering in steps (2)-(4) includes simultaneous vacuuming and inert gas purging.

[0047] The purpose of the present invention to perform vacuuming and inert gas purging in each buffer chamber is to clear the process gas in the previous process chamber to prevent it from being brought into the next process chamber to affect the next process. It can also prevent gas cross-talk between the two process chambers.

[0048] As a preferred technical solution of the present invention, the raw materials for manufacturing the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film in step (2) include a first silicon source, an oxygen source and a hydrogen source.

[0049] Preferably, the flow ratio of the first silicon source, oxygen source and hydrogen source is 1:(0.1-10):(5-20), for example 1:0.1:5, 1:0.1:9, 1:0.1:12.5, 1:0.1:16, 1:0.1:20, 1:5:5, 1:5:9, 1:5:12.5, 1:5:16, 1:5:20, 1:10:5, 1:10:9, 1:10:12.5, 1:10:16 or 1:10:20, etc., but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0050] Preferably, the raw materials for manufacturing the P-type doped hydrogenated amorphous silicon oxide film in step (3) include a first silicon source, an oxygen source, a hydrogen source and a first doping source.

[0051] Preferably, the flow ratio of the first silicon source, the oxygen source, the hydrogen source and the first doping source is 1:(0.1-10):(5-20):(0.05-0.3), for example, 1:0.1:5:0.05, 1:0.1:12:0.05, 1:0.1:20:0.05, 1:5:5:0.05, 1:5:12:0.05, 1:5:20:0.05, 1:10:5:0.05, 1:10:12:0.05, 1:10:20:0.05, 1:0.1:5:0.17, 1:0.1:12:0.17, 1:0.1:20:0.17 , 1:5:5:0.17, 1:5:12:0.17, 1:5:20:0.17, 1:10:5:0.17, 1:10:12:0.17, 1:10:20:0.17, 1:0.1:5:0.3, 1:0.1:12:0.3, 1:0.1:20:0.3, 1:5:5:0.3, 1:5:12:0.3, 1:5:20:0.3, 1:10:5:0.3, 1:10:12:0.3 or 1:10:20:0.3, but are not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0052] Preferably, the raw materials for manufacturing the P-type doped microcrystalline silicon film in step (3) include a second silicon source, a hydrogen source and a first doping source.

[0053] Preferably, the flow ratio of the second silicon source, the hydrogen source and the first doping source is 1:(20-100):(0.3-0.7), for example 1:20:0.3, 1:40:0.3, 1:60:0.3, 1:80:0.3, 1:100:0.3, 1:20:0.5, 1:40:0.5, 1:60:0.5, 1:80:0.5, 1:100:0.5, 1:20:0.7, 1:40:0.7, 1:60:0.7, 1:80:0.7, 1:100:0.7, etc., but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0054] Preferably, the first doping source includes diborane.

[0055] As a preferred technical solution of the present invention, the raw materials for manufacturing the N-type doped hydrogenated amorphous silicon oxide film in step (4) include a first silicon source, an oxygen source, a hydrogen source and a second doping source.

[0056] Preferably, the flow ratio of the first silicon source, the oxygen source, the hydrogen source and the second doping source is 1:(0.1-10):(5-20):(0.05-0.3), for example, 1:0.1:5:0.05, 1:0.1:12:0.05, 1:0.1:20:0.05, 1:0.5:5:0.05, 1:0.5:12:0.05, 1:0.5:20:0.05, 1:10:5:0.05, 1:10:12:0.05, 1:10:20:0.05, 1:0.1:5:0.17, 1:0.1:12:0.17, 1:0.1:20:0.17, 1:0.5:5:0.05 0.5:5:0.17, 1:0.5:12:0.17, 1:0.5:20:0.17, 1:10:5:0.17, 1:10:12:0.17, 1:10:20:0.17, 1:0.1:5:0.3, 1:0.1:12:0.3, 1:0.1:20:0.3, 1:0.5:5:0.3, 1:0.5:12:0.3, 1:0.5:20:0.3, 1:10:5:0.3, 1:10:12:0.3 or 1:10:20:0.3, etc., but are not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0057] Preferably, the raw materials for manufacturing the N-type doped microcrystalline silicon thin film in step (4) include a second silicon source, a hydrogen source and a second doping source.

[0058] Preferably, the flow ratio of the second silicon source, the hydrogen source and the second doping source is 1:(20-100):(0.1-0.5), for example 1:20:0.1, 1:40:0.1, 1:60:0.1, 1:80:0.1, 1:100:0.1, 1:20:0.3, 1:40:0.3, 1:60:0.3, 1:80:0.3, 1:100:0.3, 1:20:0.5, 1:40:0.5, 1:60:0.5, 1:80:0.5, 1:100:0.5, etc., but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0059] Preferably, the second doping source includes phosphine.

[0060] As a preferred technical solution of the present invention, the first silicon source includes tetraethyl orthosilicate.

[0061] Preferably, the second silicon source comprises silane.

[0062] Preferably, the oxygen source comprises ozone.

[0063] Preferably, the hydrogen source comprises hydrogen gas.

[0064] It should be noted that in the process of preparing thin films by the Cat-CVD method of the present invention, the amount of hydrogen source such as hydrogen used will affect the material of the film, that is, it will affect the transition between microcrystalline silicon and amorphous silicon. When the hydrogen content is low, the film is amorphous, and when the hydrogen content is high, the film is nano / microcrystalline.

[0065] Compared with the prior art solutions, the present invention has at least the following beneficial effects:

[0066] (1) The intrinsic hydrogenated amorphous silicon oxide film used in the present invention has a better passivation effect than the intrinsic amorphous silicon film in the prior art, which is beneficial to improving the open circuit voltage of the battery;

[0067] (2) The doped hydrogenated amorphous silicon oxide film used in the present invention has a wider band gap than the doped amorphous silicon film in the prior art, which is beneficial to improving the short-circuit current of the battery; the doped hydrogenated amorphous silicon oxide film has better light transmittance than the doped amorphous silicon film, and has a lower refractive index than the doped amorphous silicon film, and can better match the refractive index with the TCO film, thereby reducing optical loss;

[0068] (3) In the present invention, the doped hydrogenated amorphous silicon oxide film is not in direct contact with the TCO film. By providing a doped microcrystalline silicon film as a gap, the contact resistance with the TCO film layer can be reduced, which is beneficial to improving the fill factor of the battery;

[0069] (4) With the cooperation of the HJT structure provided by the present invention, the conversion efficiency of the obtained solar cell is significantly improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0070] Figure 1 is a schematic structural diagram of the HJT solar cell according to Example 1 of the present invention;

[0071] In the figure: 1-N-type silicon wafer, 2-first intrinsic hydrogenated amorphous silicon oxide film, 3-second intrinsic hydrogenated amorphous silicon oxide film, 4-P-type doped hydrogenated amorphous silicon oxide film, 5-N-type doped hydrogenated amorphous silicon oxide film, 6-P-type doped microcrystalline silicon film, 7-N-type doped microcrystalline silicon film, 8-first TCO film, 9-second TCO film, 10-first collector, 11-second collector. DETAILED DESCRIPTION

[0072] The technical solution of the present invention is further described below in conjunction with the accompanying drawings and through specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0073] Example 1

[0074] This embodiment provides a HJT solar cell, and its structural schematic diagram is as follows Figure 1 As shown, the solar cell includes an N-type silicon wafer 1, on the front side of the N-type silicon wafer 1, a first intrinsic hydrogenated amorphous silicon oxide film 2 with a thickness of 12.5 nm, a P-type doped hydrogenated amorphous silicon oxide film 4 with a thickness of 7.5 nm, a P-type doped microcrystalline silicon film 6 with a thickness of 12.5 nm, a first TCO film 8 and a first collector 10 are sequentially stacked from the inside to the outside; on the back side of the N-type silicon wafer 1, a second intrinsic hydrogenated amorphous silicon oxide film 3 with a thickness of 12.5 nm, an N-type doped hydrogenated amorphous silicon oxide film 5 with a thickness of 7.5 nm, an N-type doped microcrystalline silicon film 7 with a thickness of 12.5 nm, a second TCO film 9 and a second collector 10 are sequentially stacked from the inside to the outside.

[0075] The HJT solar cell described in this embodiment is manufactured by the following method:

[0076] (1) Place the double-sided textured N-type silicon wafer on a carrier in the preheating chamber of the Cat-CVD equipment, evacuate to less than 0.001 Pa, and preheat at 150°C;

[0077] (2) introducing the carrier with the preheated N-type silicon wafer into the first process chamber, setting the temperature of the hot wire to 1700° C., controlling the distance from the hot wire to the carrier to 55 mm, and setting the pressure in the first process chamber to 2 Pa and the chamber temperature to 180° C.; introducing ethyl orthosilicate, ozone and hydrogen at a flow ratio of 1:5:13, respectively manufacturing the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film with a thickness of 12.5 nm on both sides of the N-type silicon wafer, and then introducing the carrier into the first buffer chamber for nitrogen purging and vacuuming;

[0078] (3) The carrier is transferred from the first buffer chamber to the second process chamber, the temperature of the hot wire is set to 1900°C, the distance from the hot wire to the carrier is controlled to be 50 mm, and the pressure in the second process chamber is set to 5 Pa, and the chamber temperature is set to 200°C; ethyl orthosilicate, ozone, hydrogen and diborane are introduced with a flow ratio of 1:8:15:0.2 to manufacture the P-type doped hydrogenated amorphous silicon oxide film with a thickness of 7.5 nm on the first intrinsic hydrogenated amorphous silicon oxide film, and then the carrier is transferred to the second buffer chamber for nitrogen Purge and vacuumize; then transfer the carrier from the second buffer chamber to the third process chamber, set the temperature of the hot wire to 1850°C, control the distance from the hot wire to the carrier to 45mm, set the pressure in the third process chamber to 2Pa, and the chamber temperature to 240°C; introduce silane, hydrogen and diborane with a flow ratio of 1:40:0.5, manufacture the P-type doped microcrystalline silicon film with a thickness of 12.5nm on the P-type doped hydrogenated amorphous silicon oxide film, and then transfer the carrier to the third buffer chamber for nitrogen purging and vacuumization;

[0079] (4) The carrier is introduced from the third buffer chamber into the fourth process chamber, the temperature of the hot wire is set to 1900° C., the distance from the hot wire to the carrier is controlled to be 48 mm, the pressure in the fourth process chamber is set to 4 Pa, and the chamber temperature is set to 210° C.; tetraethyl orthosilicate, ozone, hydrogen and phosphine are introduced at a flow ratio of 1:2:7:0.1 to form the N-type doped hydrogenated amorphous silicon oxide film with a thickness of 7.5 nm on the second intrinsic hydrogenated amorphous silicon oxide film, and then the carrier is introduced into the fourth buffer chamber for nitrogen Then, the carrier is introduced from the fourth buffer chamber into the fifth process chamber, the temperature of the hot wire is set to 2000°C, the distance from the hot wire to the carrier is controlled to be 40mm, and the pressure in the fifth process chamber is set to 2Pa, and the chamber temperature is set to 270°C; silane, hydrogen and phosphine are introduced with a flow ratio of 1:80:0.35 to manufacture the N-type doped microcrystalline silicon film with a thickness of 12.5nm on the N-type doped hydrogenated amorphous silicon oxide film, and then introduced into the fifth buffer chamber for nitrogen purge and vacuumization;

[0080] (5) transferring the carrier from the fifth buffer chamber into the PVD chamber, and manufacturing a first TCO film and a second TCO film on the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film respectively;

[0081] (6) A first collector and a second collector are manufactured on the first TCO film and the second TCO film respectively to obtain a HJT solar cell.

[0082] Example 2

[0083] The present embodiment provides a HJT solar cell, which includes an N-type silicon wafer, on the front side of the N-type silicon wafer, a first intrinsic hydrogenated amorphous silicon oxide film with a thickness of 10 nm, a P-type doped hydrogenated amorphous silicon oxide film with a thickness of 5 nm, a P-type doped microcrystalline silicon film with a thickness of 10 nm, a first TCO film, and a first collector are stacked in sequence from the inside to the outside; on the back side of the N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide film with a thickness of 10 nm, an N-type doped hydrogenated amorphous silicon oxide film with a thickness of 5 nm, an N-type doped microcrystalline silicon film with a thickness of 10 nm, a second TCO film, and a second collector are stacked in sequence from the inside to the outside.

[0084] Example 3

[0085] The present embodiment provides a HJT solar cell, which includes an N-type silicon wafer, on the front side of the N-type silicon wafer, a first intrinsic hydrogenated amorphous silicon oxide film with a thickness of 11.3 nm, a P-type doped hydrogenated amorphous silicon oxide film with a thickness of 6.2 nm, a P-type doped microcrystalline silicon film with a thickness of 11.2 nm, a first TCO film, and a first collector are stacked in sequence from the inside to the outside; on the back side of the N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide film with a thickness of 11.3 nm, an N-type doped hydrogenated amorphous silicon oxide film with a thickness of 5.6 nm, an N-type doped microcrystalline silicon film with a thickness of 13.4 nm, a second TCO film, and a second collector are stacked in sequence from the inside to the outside.

[0086] Example 4

[0087] The present embodiment provides a HJT solar cell, which includes an N-type silicon wafer, on the front side of the N-type silicon wafer, a first intrinsic hydrogenated amorphous silicon oxide film with a thickness of 13.7 nm, a P-type doped hydrogenated amorphous silicon oxide film with a thickness of 8.4 nm, a P-type doped microcrystalline silicon film with a thickness of 14 nm, a first TCO film, and a first collector are stacked in sequence from the inside to the outside; on the back side of the N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide film with a thickness of 13.7 nm, an N-type doped hydrogenated amorphous silicon oxide film with a thickness of 9.4 nm, an N-type doped microcrystalline silicon film with a thickness of 12.8 nm, a second TCO film, and a second collector are stacked in sequence from the inside to the outside.

[0088] Example 5

[0089] The present embodiment provides a HJT solar cell, which includes an N-type silicon wafer, on the front side of the N-type silicon wafer, a first intrinsic hydrogenated amorphous silicon oxide film with a thickness of 15 nm, a P-type doped hydrogenated amorphous silicon oxide film with a thickness of 10 nm, a P-type doped microcrystalline silicon film with a thickness of 15 nm, a first TCO film, and a first collector are stacked in sequence from the inside to the outside; on the back side of the N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide film with a thickness of 15 nm, an N-type doped hydrogenated amorphous silicon oxide film with a thickness of 10 nm, an N-type doped microcrystalline silicon film with a thickness of 15 nm, a second TCO film, and a second collector are stacked in sequence from the inside to the outside.

[0090] Comparative Example 1

[0091] This comparative example provides a HJT solar cell, wherein the solar cell does not contain a P-type doped microcrystalline silicon film and an N-type doped microcrystalline silicon film;

[0092] Specifically, the solar cell includes an N-type silicon wafer, on the front side of the N-type silicon wafer, a first intrinsic hydrogenated amorphous silicon oxide film with a thickness of 12.5 nm, a P-type doped hydrogenated amorphous silicon oxide film with a thickness of 7.5 nm, a first TCO film and a first collector are stacked in sequence from the inside to the outside; on the back side of the N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide film with a thickness of 12.5 nm, an N-type doped hydrogenated amorphous silicon oxide film with a thickness of 7.5 nm, a second TCO film and a second collector are stacked in sequence from the inside to the outside.

[0093] Comparative Example 2

[0094] This comparative example provides a HJT solar cell, wherein the intrinsic layer of the solar cell is made of amorphous silicon;

[0095] Specifically, the solar cell includes an N-type silicon wafer, on the front side of the N-type silicon wafer, a first intrinsic amorphous silicon film with a thickness of 12.5 nm, a P-type doped hydrogenated amorphous silicon oxide film with a thickness of 7.5 nm, a P-type doped microcrystalline silicon film with a thickness of 12.5 nm, a first TCO film and a first collector are stacked in sequence from the inside to the outside; on the back side of the N-type silicon wafer, a second intrinsic amorphous silicon film with a thickness of 12.5 nm, an N-type doped hydrogenated amorphous silicon oxide film with a thickness of 7.5 nm, an N-type doped microcrystalline silicon film with a thickness of 12.5 nm, a second TCO film and a second collector are stacked in sequence from the inside to the outside.

[0096] Comparative Example 3

[0097] This comparative example provides a HJT solar cell, wherein the doping layer of the solar cell is made of amorphous silicon;

[0098] Specifically, the solar cell includes an N-type silicon wafer, on the front side of the N-type silicon wafer, a first intrinsic hydrogenated amorphous silicon oxide film with a thickness of 12.5 nm, a P-type doped amorphous silicon film with a thickness of 7.5 nm, a P-type doped microcrystalline silicon film with a thickness of 12.5 nm, a first TCO film and a first collector are stacked in sequence from the inside to the outside; on the back side of the N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide film with a thickness of 12.5 nm, an N-type doped amorphous silicon film with a thickness of 7.5 nm, an N-type doped microcrystalline silicon film with a thickness of 12.5 nm, a second TCO film and a second collector are stacked in sequence from the inside to the outside.

[0099] Comparative Example 4

[0100] This comparative example provides a HJT solar cell, wherein both the intrinsic layer and the doping layer of the solar cell are made of amorphous silicon;

[0101] Specifically, the solar cell includes an N-type silicon wafer, on the front side of the N-type silicon wafer, a first intrinsic amorphous silicon film with a thickness of 12.5 nm, a P-type doped amorphous silicon film with a thickness of 7.5 nm, a P-type doped microcrystalline silicon film with a thickness of 12.5 nm, a first TCO film and a first collector are stacked in sequence from the inside to the outside; on the back side of the N-type silicon wafer, a second intrinsic amorphous silicon film with a thickness of 12.5 nm, an N-type doped amorphous silicon film with a thickness of 7.5 nm, an N-type doped microcrystalline silicon film with a thickness of 12.5 nm, a second TCO film and a second collector are stacked in sequence from the inside to the outside.

[0102] Comparative Example 5

[0103] This comparative example provides a HJT solar cell, wherein the intrinsic layer and the doping layer of the solar cell are both made of amorphous silicon, and do not contain a P-type doped microcrystalline silicon film and an N-type doped microcrystalline silicon film;

[0104] Specifically, the solar cell includes an N-type silicon wafer, on the front side of the N-type silicon wafer, a first intrinsic amorphous silicon film with a thickness of 12.5 nm, a P-type doped amorphous silicon film with a thickness of 7.5 nm, a first TCO film and a first collector are stacked in sequence from the inside to the outside; on the back side of the N-type silicon wafer, a second intrinsic amorphous silicon film with a thickness of 12.5 nm, an N-type doped amorphous silicon film with a thickness of 7.5 nm, a second TCO film and a second collector are stacked in sequence from the inside to the outside.

[0105] The solar cells obtained in the embodiments and comparative examples were tested respectively, and the results are listed in Table 1.

[0106] Table 1

[0107] project Short circuit current (mA) Open circuit voltage(mV) Fill factor (%) Conversion efficiency (%) Example 1 38.52 742.2 81.13 23.19 Example 2 38.21 741.1 80.88 23.04 Example 3 38.32 741.4 80.78 23.12 Example 4 38.11 740.7 80.56 23.06 Example 5 38.26 741.2 81.02 23.15 Comparative Example 1 37.89 739.68 80.12 22.76 Comparative Example 2 37.28 738.74 79.88 22.67 Comparative Example 3 37.46 739.63 80.34 22.53 Comparative Example 4 38.01 739.36 80.56 22.88 Comparative Example 5 36.87 738.21 80.12 22.24

[0108] It can be seen from Table 1 that:

[0109] Compared with the HJT structures in Comparative Examples 1 to 5, Examples 1 to 5 all use the solar cells formed by the HJT structure provided by the present invention, so that the open circuit voltage, short circuit current and fill factor are improved, and finally the conversion efficiency of the battery is effectively improved;

[0110] It can be seen that the present invention can effectively improve the passivation effect, light transmittance and the matching degree of the refractive index with the TCO film by replacing the materials of the intrinsic layer and the doping layer with a hydrogenated silicon oxide film, thereby minimizing optical losses and facilitating improving the open circuit voltage and short circuit current. At the same time, a doped microcrystalline silicon film is arranged between the doped hydrogenated amorphous silicon oxide film and the TCO film, which can reduce the contact resistance with the TCO film and effectively improve the fill factor. Therefore, the HJT solar cell provided by the present invention has enhanced comprehensive performance and is conducive to improving the conversion efficiency of the battery.

[0111] The present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must rely on the above detailed structural features to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of the components selected by the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

[0112] The preferred embodiments of the present invention are described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, a variety of simple modifications can be made to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.

[0113] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

[0114] In addition, various embodiments of the present invention may be arbitrarily combined, and as long as they do not violate the concept of the present invention, they should also be regarded as the contents disclosed by the present invention.

Claims

1. A HJT solar cell, characterized in that: The HJT solar cell comprises an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide film, a P-type doped hydrogenated amorphous silicon oxide film, a P-type doped microcrystalline silicon film, a first TCO film and a first collector are sequentially stacked on a front side of the N-type silicon wafer from inside to outside; a second intrinsic hydrogenated amorphous silicon oxide film, an N-type doped hydrogenated amorphous silicon oxide film, an N-type doped microcrystalline silicon film, a second TCO film and a second collector are sequentially stacked on a back side of the N-type silicon wafer from inside to outside; The thickness of the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film are both 10.5-15 nm; The thickness of the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film are both 5-10 nm; The thickness of the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film are both 10-15 nm.

2. A manufacturing device for the HJT solar cell according to claim 1, characterized in that: The manufacturing equipment includes a Cat-CVD equipment, and the Cat-CVD equipment includes a first process chamber and a first buffer chamber, a second process chamber and a second buffer chamber, a third process chamber and a third buffer chamber, a fourth process chamber and a fourth buffer chamber, and a fifth process chamber and a fifth buffer chamber, so as to realize the sequential manufacturing of different types of thin films; The buffer chamber can ensure that the process environments and atmospheres of two adjacent process chambers do not affect each other.

3. The manufacturing equipment used for the HJT solar cell according to claim 2, characterized in that: A preheating chamber is arranged before the first process chamber.

4. The manufacturing equipment used for the HJT solar cell according to claim 2, characterized in that: A hot wire is arranged in the first process chamber for decomposing raw materials; the second process chamber, the third process chamber, the fourth process chamber and the fifth process chamber are arranged in the same manner as the first process chamber.

5. A method for manufacturing a HJT solar cell, characterized in that: The manufacturing method uses the manufacturing equipment according to any one of claims 2 to 4, and the manufacturing method comprises the following steps: (1) Prepare the N-type silicon wafer after texturing and cleaning; (2) transferring the silicon wafer into a first process chamber, respectively manufacturing the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film on both side surfaces of the N-type silicon wafer, and then transferring the silicon wafer into a first buffer chamber for buffering; (3) passing the P-type doped hydrogenated amorphous silicon oxide film into the second process chamber to manufacture the P-type doped hydrogenated amorphous silicon oxide film on the first intrinsic hydrogenated amorphous silicon oxide film, and then passing the P-type doped microcrystalline silicon film into the second buffer chamber for buffering; then passing the P-type doped hydrogenated amorphous silicon oxide film into the third process chamber to manufacture the P-type doped microcrystalline silicon film on the P-type doped hydrogenated amorphous silicon oxide film, and then passing the P-type doped microcrystalline silicon film into the third buffer chamber for buffering; (4) transferring the N-type doped hydrogenated amorphous silicon oxide film to the fourth process chamber to manufacture the N-type doped hydrogenated amorphous silicon oxide film on the second intrinsic hydrogenated amorphous silicon oxide film, and then transferring the N-type doped microcrystalline silicon film to the fifth buffer chamber for buffering; then transferring the N-type doped hydrogenated amorphous silicon oxide film to the fifth process chamber to manufacture the N-type doped microcrystalline silicon film on the N-type doped hydrogenated amorphous silicon oxide film, and then transferring the N-type doped microcrystalline silicon film to the fifth buffer chamber for buffering; (5) manufacturing a first TCO film and a second TCO film on the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film respectively; (6) manufacturing a first collector and a second collector on the first TCO film and the second TCO film respectively to obtain a HJT solar cell; There is no particular order in which steps (3) and (4) are performed.

6. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: Step (1) also includes preheating the N-type silicon wafer.

7. The method for manufacturing a HJT solar cell according to claim 6, characterized in that: The preheating is performed in a preheating chamber.

8. The method for manufacturing a HJT solar cell according to claim 6, characterized in that: The preheating temperature in step (1) is 100-200°C.

9. The method for manufacturing a HJT solar cell according to claim 6, characterized in that: The preheating in step (1) is carried out under a vacuum degree of less than 0.001 Pa.

10. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: Step (2) The temperature of the hot wire in the first process chamber is 1500-1900°C.

11. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The temperature of the hot wire in the process chamber corresponding to step (3) and step (4) is 1600-2200°C.

12. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The distance from the hot wire to the pre-deposition surface in the process chamber corresponding to steps (2) to (4) is 40 to 150 mm.

13. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The pressure in the process chamber corresponding to steps (2)-(4) is 1~50Pa.

14. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The chamber temperatures of the process chambers corresponding to steps (2) to (4) are all between 100 and 300°C.

15. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The buffering in steps (2) to (4) includes simultaneous vacuuming and inert gas purging.

16. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The raw materials for manufacturing the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film in step (2) include a first silicon source, an oxygen source and a hydrogen source.

17. The method for manufacturing a HJT solar cell according to claim 16, characterized in that: The flow ratio of the first silicon source, oxygen source and hydrogen source is 1:(0.1-10):(5-20).

18. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The raw materials for manufacturing the P-type doped hydrogenated amorphous silicon oxide film in step (3) include a first silicon source, an oxygen source, a hydrogen source and a first doping source.

19. The method for manufacturing a HJT solar cell according to claim 18, characterized in that: The flow ratio of the first silicon source, oxygen source, hydrogen source and first doping source is 1:(0.1~10):(5~20):(0.05~0.3).

20. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The raw materials for manufacturing the P-type doped microcrystalline silicon thin film in step (3) include a second silicon source, a hydrogen source and a first doping source.

21. The method for manufacturing a HJT solar cell according to claim 20, characterized in that: The flow ratio of the second silicon source, the hydrogen source and the first doping source is 1:(20-100):(0.3-0.7).

22. The method for manufacturing a HJT solar cell according to claim 18, characterized in that: The first doping source includes diborane.

23. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The raw materials for manufacturing the N-type doped hydrogenated amorphous silicon oxide film in step (4) include a first silicon source, an oxygen source, a hydrogen source and a second doping source.

24. The method for manufacturing a HJT solar cell according to claim 23, characterized in that: The flow ratio of the first silicon source, oxygen source, hydrogen source and second doping source is 1:(0.1~10):(5~20):(0.05~0.3).

25. The method for manufacturing a HJT solar cell according to claim 5, characterized in that: The raw materials for manufacturing the N-type doped microcrystalline silicon thin film in step (4) include a second silicon source, a hydrogen source and a second doping source.

26. The method for manufacturing a HJT solar cell according to claim 25, characterized in that: The flow ratio of the second silicon source, the hydrogen source and the second doping source is 1:(20-100):(0.1-0.5).

27. The method for manufacturing a HJT solar cell according to claim 23, characterized in that: The second doping source includes phosphine.

28. The method for manufacturing a HJT solar cell according to claim 16, characterized in that: The first silicon source includes tetraethyl orthosilicate.

29. The method for manufacturing a HJT solar cell according to claim 20, characterized in that: The second silicon source includes silane.

30. The method for manufacturing a HJT solar cell according to claim 16, characterized in that: The oxygen source includes ozone.

31. The method for manufacturing a HJT solar cell according to claim 16, characterized in that: The hydrogen source includes hydrogen gas.

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