Low temperature plasma metal activation device
By designing a low-temperature plasma metal activation device that includes a shell, power module, control unit, human-machine interaction unit and piezoelectric transformer, low-temperature plasma is generated by breaking down air with DC power. This solves the problems of complex operation and raw materials of existing devices, and achieves safe and convenient metal activation and sterilization effects.
Patent Information
- Application Number
- CN202210787262.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-07-06
- Publication Date
- 2025-12-19
- Estimated Expiration
- 2042-07-06
AI Technical Summary
Existing low-temperature plasma metal activation devices are complex to operate, require complex raw materials, and operate under harsh conditions, making it difficult to meet the wide range of metal activation and sterilization needs.
A low-temperature plasma metal activation device was designed, which consists of a shell, a power module, a control unit, a human-machine interaction unit, a lifting platform, and a piezoelectric transformer. It is powered by a 24V-36V DC power supply and directly breaks down the air to generate low-temperature plasma. The piezoelectric transformer is distributed around the isolation cover, and the start and stop of the device are controlled by the human-machine interaction unit to achieve sterilization and deoxidation of the metal surface.
It achieves low-temperature plasma metal activation that is easy to operate, safe and reliable. It has a simple structure, does not require rare gases, improves the convenience of operation and output efficiency, and ensures the safety of operators.
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Figure CN115379634B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The embodiment of the present application relates to the field of plasma, in particular to a low-temperature plasma metal activation device. BACKGROUND
[0002] The generation of low-temperature plasma is a very complex physical and chemical reaction process, in which ultraviolet rays, charged particles and active ingredients such as bactericidal ingredients are generated in the plasma, and the active ingredients mainly include atoms in the excited state, metastable atoms, oxides and nitrides with active chemical properties. The activation of the metal by the plasma is mainly achieved by the comprehensive action of the ultraviolet rays, charged particles and active ingredients such as bactericidal ingredients on the metal surface of the metal body, so as to remove the oxygen atoms and bacteria on the metal surface. Although the main action mechanism of some bactericidal ingredients in the low-temperature plasma and the metal body is not clear at present, with the continuous deepening of the research, in recent years, researchers have carried out a series of in-depth research on the application of low-temperature plasma through various technical means and methods, and have a preliminary understanding of the action mechanism. In recent years, the plasma generated by the principle of dielectric barrier discharge is widely used in electrostatic dust removal, sterilization and disinfection, and modification of metal materials.
[0003] The main working principle of the low-temperature plasma metal activation device is to raise the voltage to several thousand volts through a boost circuit, ionize the gas by the principle of dielectric barrier discharge, and the ionized gas is commonly used air, argon, helium, nitrogen and the like. At present, most of the low-temperature plasma metal activation devices adopt the inert gas scheme, and the working conditions are harsh, and the raw material ratio is complex. Therefore, it is urgent to develop a low-temperature plasma device which is simple to operate, adaptable, sterilized, and has strong deoxidation effect to meet different metal activation, sterilization and other needs, and the device has great market potential and broad commercial application prospect. SUMMARY
[0004] The embodiment of the present application provides a low-temperature plasma metal activation device to solve the problems of harsh conditions and complex raw materials in the prior art.
[0005] In order to solve the above technical problems, the embodiment of the present application discloses the following technical scheme:
[0006] A low-temperature plasma metal activation device, comprising: a shell, a power module, a control unit, a man-machine interaction unit, a lifting platform, an isolation cover and at least two piezoelectric transformers.
[0007] The power module, the control unit, the lifting platform and the piezoelectric transformer are arranged inside the shell; a first opening is formed in the upper part of the shell, the isolation cover passes through the first opening, the upper part of the isolation cover is sealingly and fixedly connected with the shell, the isolation cover is provided with a storage groove for placing the metal to be activated; the man-machine interaction unit is fixed to the outer side of the shell; the shell is provided with a power interface which is an electrical connection port of the power module and an external power supply; the lifting platform is connected with the piezoelectric transformer and is used for controlling the up-down movement of the piezoelectric transformer; the piezoelectric transformer is distributed around the isolation cover.
[0008] The power module is electrically connected with the control unit; the control unit is electrically connected with the man-machine interaction unit through the output terminal of the control unit; the control unit is electrically connected with the motor of the lifting platform through the output terminal of the control unit; the control unit is electrically connected with the piezoelectric transformer through the output terminal of the control unit.
[0009] The power module comprises an input terminal, a first voltage conversion chip, a second voltage conversion chip, a third voltage conversion chip and an output terminal; the input terminal is electrically connected with the power interface, the output terminal is electrically connected with the control unit; the input terminal is electrically connected with the first voltage conversion chip; the first voltage conversion chip is electrically connected with the second voltage conversion chip and the third voltage conversion chip; the first voltage conversion chip, the second voltage conversion chip, the third voltage conversion chip and the input terminal are all electrically connected with the output terminal; the first voltage conversion chip converts the voltage of the external power supply into a first voltage; the second voltage conversion chip converts the first voltage output by the first voltage conversion chip into a second voltage; the third voltage conversion chip converts the first voltage output by the first voltage conversion chip into a third voltage.
[0010] The lifting platform comprises a platform surface, a motor and an output rod, wherein the number of the motor and the number of the output rod are the same as the number of the piezoelectric transformer; the piezoelectric transformer is fixedly connected with the output rod one by one; the motor is arranged inside the platform surface, the output rod is connected with the shaft of the motor, and the motor is one-to-one corresponding with the output rod; the control unit is electrically connected with all the motors and is used for controlling the rotating speed of the motor, and the rotation of the motor drives the up-down movement of the output rod.
[0011] The control unit comprises a controller, a logic chip, a motor control chip, a power tube driving chip, a power tube chip and an output terminal; the controller is electrically connected with the logic chip; the logic chip is electrically connected with the motor control chip, the power tube driving chip and the output terminal; the motor control chip is the same in number as the motor, and the motor control chip is electrically connected with the motor one by one; the power tube driving chip is electrically connected with the power tube chip; the power tube chip is the same in number as the piezoelectric transformer, and the power tube chip is electrically connected with the piezoelectric transformer one by one; the output terminal is electrically connected with the human-computer interaction unit; the controller is connected with a third voltage, the logic chip is connected with a second voltage, the motor control chip is connected with the second voltage, the power tube driving chip is connected with a first voltage, and the power tube chip is connected with an external power supply voltage.
[0012] The number of piezoelectric transformers is even, and the piezoelectric transformers are rotationally symmetrically arranged around the isolation cover.
[0013] The low-temperature plasma metal activation device further comprises a dustproof cover, which is arranged above the first opening of the shell and covers the first opening of the shell.
[0014] The human-computer interaction unit is fixed to the upper surface of the shell; the human-computer interaction unit comprises a touch screen and an infrared switch; the touch screen is fixed to the upper surface of the shell by screws, and the touch screen is used to control the low-temperature plasma metal activation device to start or stop working, and to display the working time and the plasma intensity of the low-temperature plasma metal activation device; the infrared switch passes through the second opening of the shell, and the middle part of the infrared switch is sealingly fixed to the second opening; the infrared switch is used to control the low-temperature plasma metal activation device to start or stop working; the touch screen is electrically connected with the control unit; and the infrared switch is electrically connected with the touch screen.
[0015] The low-temperature plasma metal activation device has the following specific working process:
[0016] The dustproof cover of the low-temperature plasma metal activation device is opened;
[0017] The metal to be activated is placed in the isolation cover;
[0018] The working time and the activation intensity of the low-temperature plasma metal activation device are set through the touch screen in the human-computer interaction unit;
[0019] The low-temperature plasma metal activation device is started and powered on through the human-computer interaction unit;
[0020] The control unit controls the piezoelectric transformer to generate high voltage, to break down the air in the isolation cover, to generate low-temperature plasma, to irradiate the low-temperature plasma to the surface of the metal, and to activate the metal.
[0021] Meanwhile, the lifting platform motor starts to drive the output rod to move up and down, and the output rod drives the piezoelectric transformer to move up and down, so that the metal surface can be irradiated by the low-temperature plasma;
[0022] Meanwhile, the touch screen displays the working time and activation intensity of the device;
[0023] When the working time of the low-temperature plasma metal activation device is reached, the device stops working;
[0024] The touch screen displays the completion of activation;
[0025] The activated metal is taken out, and the dust cover is covered.
[0026] The high voltage generated by the low-temperature plasma metal activation device can break through the air to generate low-temperature plasma, which is used for sterilization and deoxidation of the metal surface.
[0027] The technical scheme provided by the embodiment of the application can include the following beneficial effects:
[0028] In the embodiment of the application, the low-temperature plasma metal activation device is powered by an external 24V-36V DC power supply, which is safe and reliable; in addition, the device does not need to add any rare gas to generate low-temperature plasma, but directly breaks through the air to generate low-temperature plasma, which is simple in structure; the device is also equipped with a human-computer interaction unit, the touch screen of the unit can complete the start and stop control of the device, and the touch screen can also display the length of time and the intensity of the plasma of the low-temperature plasma metal activation device. The embodiment of the application actually controls the piezoelectric transformer to generate pulse high voltage, and the high voltage breaks through the air to generate low-temperature plasma after passing through the isolation cover, and the low-temperature plasma is used for sterilization and deoxidation of the metal surface. Therefore, the technical scheme of the application has strong operability, can output low-temperature plasma at any time, and is convenient to operate. The piezoelectric transformer generated by the piezoelectric transformer has an isolation cover at the front end, and the operator is isolated from the high voltage, which ensures the safety during the low-temperature plasma output process. Therefore, the embodiment of the application can improve the operation convenience and output efficiency of the low-temperature plasma metal activation device. BRIEF DESCRIPTION OF DRAWINGS
[0029] The drawings incorporated into the specification and forming a part thereof, illustrate embodiments consistent with the present application and, together with the specification, serve to explain the principles of the application.
[0030] In order to more clearly illustrate the technical scheme in the embodiments of the application or the prior art, the drawings needed to be used in the embodiment or prior art description will be briefly introduced below, and obviously, other drawings can also be obtained by those skilled in the art without creative labor.
[0031] Figure 1 is a low-temperature plasma metal activation device structure schematic diagram provided by an embodiment of the present application;
[0032] Figure 2 is a low-temperature plasma metal activation device electrical connection diagram provided by an embodiment of the present application;
[0033] Figure 3 is a power module structure schematic diagram provided by an embodiment of the present application;
[0034] Figure 4 is a control unit structure schematic diagram provided by an embodiment of the present application; DETAILED DESCRIPTION
[0035] In order for those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor should be within the scope of protection of the present application.
[0036] In order to better understand the present application, the embodiments of the present application will be explained in detail below in conjunction with the drawings.
[0037] The present application provides a low-temperature plasma metal activation device. Referring to Figure 1 , Figure 1 is a low-temperature plasma metal activation device structure schematic diagram provided by an embodiment of the present application. By Figure 1 It can be known that the low-temperature plasma metal activation device provided by the embodiment of the present application mainly comprises: a shell 10, a power module 11, a control unit 12, a man-machine interaction unit 13, a lifting platform 14, an isolation cover 15 and at least two piezoelectric transformers 16;
[0038] The power module 11, the control unit 12, the lifting platform 14 and the piezoelectric transformer 16 are placed inside the shell 10; a first opening is formed in the upper part of the shell 10, the isolation cover 15 passes through the first opening, the upper part of the isolation cover 15 is sealingly and fixedly connected with the shell 10, the isolation cover 15 is provided with a storage groove, and the groove is used for placing the metal to be activated; the man-machine interaction unit 13 is fixed to the outside of the shell 10; the shell 10 is provided with a power supply interface, which is used as an electrical connection port of the power module 11 and an external power supply; the lifting platform 14 is connected with the piezoelectric transformer 16, and is used for controlling the up-down movement of the piezoelectric transformer 16; the piezoelectric transformer 16 is distributed around the isolation cover 15;
[0039] Further, referring to Figure 2 , Figure 2 is a low-temperature plasma metal activation device electrical connection diagram provided by the embodiment of the application. As can be known from Figure 2 , the power module 11 is electrically connected with the control unit 12; the control unit 12 is electrically connected with the man-machine interaction unit 13 through the output terminal of the control unit 12; the control unit 12 is electrically connected with the motor 141 of the lifting platform 14 through the output terminal of the control unit 12; and the control unit 12 is electrically connected with the piezoelectric transformer 16 through the output terminal of the control unit 12.
[0040] Further, the power module 11 structure is explained in the embodiment of the application, referring to Figure 3 , Figure 3 is a power module structure schematic diagram provided by the embodiment of the application. As shown in Figure 3 , the power module 11 comprises an input terminal 111, a first voltage conversion chip 112, a second voltage conversion chip 113, a third voltage conversion chip 114 and an output terminal 115; the input terminal 111 is electrically connected with the power interface, and the output terminal 115 is electrically connected with the control unit 12; the input terminal 111 is electrically connected with the first voltage conversion chip 112; the first voltage conversion chip 112 is electrically connected with the second voltage conversion chip 113 and the third voltage conversion chip 114; the first voltage conversion chip 112, the second voltage conversion chip 113, the third voltage conversion chip 114 and the input terminal 111 are all electrically connected with the output terminal 115; the first voltage conversion chip 112 converts the external power voltage into a first voltage; the second voltage conversion chip 113 converts the first voltage output by the first voltage conversion chip 112 into a second voltage; and the third voltage conversion chip 114 converts the first voltage output by the first voltage conversion chip 112 into a third voltage. Wherein, the input terminal 111 is connected with the 24V-36V direct current of the power interface, the first voltage conversion chip 112 converts the 24V-36V direct current voltage of the input terminal 111 into 5-8V direct current voltage, the second voltage conversion chip 113 converts the direct current voltage output by the first voltage conversion chip 112 into 5V, the third voltage conversion chip 114 converts the direct current voltage output by the first voltage conversion chip 112 into 3.3V, and the output terminal 115 has 4 paths of direct current voltage output, which are 24V-36V direct current voltage VDD, 5-8V direct current voltage VDD1, 5V direct current voltage VDD2 and 3.3V direct current voltage VDD3 respectively.
[0041] Further, referring to Figure 1 . As shown in Figure 1As shown, the lifting platform 14 includes a platform 143, a motor 141 and an output rod 142, wherein the number of the motor 141 and the number of the output rod 142 are the same as the number of the piezoelectric transformer 15; the piezoelectric transformer 15 is fixedly connected with the output rod 142 one by one; the motor 141 is placed inside the platform 143, the output rod 142 is connected with the motor 141 shaft, the motor 141 corresponds to the output rod 142; the control unit 12 is electrically connected with all the motors 141, for controlling the rotating speed of the motor 141, the motor 141 rotates to drive the output rod 142 to move up and down. Wherein, the motor 141 can be one or several of a direct current motor, a stepping motor and a servo motor, and the preferred solution is a stepping motor. The number of the motor 141 is the same as the number of the piezoelectric transformer 16, and is at least two, and the preferred solution is an even number. Different rotating speeds of the motor 141 make the moving speed of the output rod 142 up and down different, the faster the rotating speed of the motor 141, the faster the moving speed of the output rod 142 up and down.
[0042] Further, the embodiment of the present application explains the structure of the control unit 12, referring to Figure 4 , Figure 4 is the structure of the control unit provided by the embodiment of the present application. As shown in Figure 4As shown, the control unit 12 comprises a controller 121, a logic chip 122, a motor control chip 124, a power tube driving chip 125, a power tube chip 126 and an output terminal 123; the controller 121 is electrically connected with the logic chip 122; the logic chip 122 is electrically connected with the motor control chip 124, the power tube driving chip 125 and the output terminal 123, the motor control chip 124 is same in number with the motor 141, the motor control chip 124 is electrically connected with the motor 141 one by one; the power tube driving chip 125 is electrically connected with the power tube chip 126, the power tube chip 126 is same in number with the piezoelectric transformer 15, the power tube chip 126 is electrically connected with the piezoelectric transformer 15 one by one; the output terminal 123 is electrically connected with the human-computer interaction unit 13, for controlling the human-computer interaction unit 13 to display information and reading the human-computer interaction unit 13 control instruction; the controller 121 is accessed to the third voltage VDD3, the logic chip is accessed to the second voltage VDD2, the motor control chip is accessed to the second voltage VDD2, the power tube driving chip is accessed to the first voltage VDD1, and the power tube chip is accessed to the external power supply voltage VDD. Wherein, the controller 121 can be a DSP or other single-chip microcomputer; the logic chip 122 is to carry out and, or, non, etc. logic transformation to the signal of the controller 121; the motor control chip 124 is selected according to the type of the motor 141 used by the device, for example: if the motor 141 used is a direct current motor, then the motor control chip 124 is a direct current motor control chip; the power tube chip 126 can be composed of one or several switching tubes such as MOSFET, IGBT and triode, and the MOSFET is preferred; the type of the power tube driving chip 125 is determined by the type of the selected power tube chip 126, for example: if the power tube chip 126 used is MOSFET, then the power tube driving chip 125 is MOSFET driving chip; the motor control chip 124 receives the speed control signal of the logic chip 122, and can carry out speed regulation to the motor 141; the power tube chip 126 comprises at least two power devices, every two power devices are bridge-connected, the power tube chip 126 is electrically connected with the piezoelectric transformer 15 one by one through the output terminal 123, the power tube chip 126 receives the control signal of the logic chip 122, then controls the switching tube in the power tube chip 126 to work, generates 24V high-frequency voltage signal, drives the piezoelectric transformer 15 to work, the piezoelectric transformer 15 outputs high voltage, then breaks down the air in the isolation cover 16, and generates low-temperature plasma.
[0043] Further, continuing to refer to Figure 1 , the number of piezoelectric transformers 15 is even, and the piezoelectric transformers 15 are arranged in rotational symmetry around the isolation cover 16.
[0044] Further, continuing to refer toFigure 1 The low-temperature plasma metal activation device further comprises a dustproof cover 17 arranged on the first opening of the shell 10 to cover the first opening of the shell 10.
[0045] Further, the human-computer interaction unit 13 is fixed to the upper surface of the shell 10, and the human-computer interaction unit 13 comprises a touch screen 131 and an infrared switch 132. The touch screen 131 is fixed to the upper surface of the shell 10 by screws, and is used to control the low-temperature plasma metal activation device to start or stop working, and display the working time and the plasma intensity of the low-temperature plasma metal activation device. The infrared switch 132 passes through the second opening of the shell 10, and the middle part of the infrared switch 132 is fixedly connected to the second opening. The infrared switch 132 is used to control the low-temperature plasma metal activation device to start or stop working. The touch screen 131 is electrically connected to the control unit 12, and the infrared switch 132 is electrically connected to the touch screen 131.
[0046] Specifically, the operator uses the low-temperature plasma metal activation device to activate a metal, which comprises the following steps:
[0047] The dustproof cover of the low-temperature plasma metal activation device is opened;
[0048] The metal to be activated is placed in the isolation cover;
[0049] The working time and the activation intensity of the low-temperature plasma metal activation device are set through the touch screen in the human-computer interaction unit;
[0050] The low-temperature plasma metal activation device is started through the human-computer interaction unit;
[0051] The control unit controls the piezoelectric transformer to generate high voltage to break the air in the isolation cover, generate low-temperature plasma, and irradiate the metal surface with the low-temperature plasma, so that the metal starts to be activated;
[0052] At the same time, the lifting platform motor starts to drive the output rod to move up and down, and the output rod drives the piezoelectric transformer to move up and down, so that the metal surface can be irradiated by the low-temperature plasma;
[0053] At the same time, the touch screen displays the working time and the activation intensity of the device;
[0054] When the working time of the low-temperature plasma metal activation device is reached, the device stops working;
[0055] The touch screen displays that the activation is completed;
[0056] The activated metal is taken out, the dustproof cover is covered, and the metal activation is completed.
[0057] For parts not described in detail in this embodiment, please refer to... Figures 1-4 The embodiments shown are mutually referential to the embodiments described above, and will not be repeated here.
[0058] The above description is merely a specific embodiment of this application, enabling those skilled in the art to understand or implement this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A low temperature plasma metal activation apparatus, characterized by, The application relates to a metal activation device, which comprises a shell, a power module, a control unit, a man-machine interaction unit, a lifting platform, an isolation cover and at least two piezoelectric transformers. The power module, the control unit, the lifting platform and the piezoelectric transformers are arranged in the shell; a first opening is formed in the upper portion of the shell, the isolation cover passes through the first opening, the upper portion of the isolation cover is fixedly connected with the shell in a sealing mode, the isolation cover is provided with a storage groove for placing a metal to be activated; the man-machine interaction unit is fixed to the outer side of the shell; the shell is provided with a power interface which is used as an electric connection port of the power module and an external power supply; the lifting platform is connected with the piezoelectric transformers and is used for controlling the up-down movement of the piezoelectric transformers; the piezoelectric transformers are distributed around the isolation cover. The power module is electrically connected with the control unit; the control unit is electrically connected with the man-machine interaction unit through an output terminal of the control unit; the control unit is electrically connected with a motor of the lifting platform through the output terminal of the control unit; and the control unit is electrically connected with the piezoelectric transformers through the output terminal of the control unit. The power module comprises an input terminal, a first voltage conversion chip, a second voltage conversion chip, a third voltage conversion chip and an output terminal; the input terminal is electrically connected with the power interface; the output terminal is electrically connected with the control unit; the input terminal is electrically connected with the first voltage conversion chip; the first voltage conversion chip is electrically connected with the second voltage conversion chip and the third voltage conversion chip; the first voltage conversion chip, the second voltage conversion chip, the third voltage conversion chip and the input terminal are all electrically connected with the output terminal; the first voltage conversion chip converts the voltage of an external power supply into a first voltage; the second voltage conversion chip converts the first voltage output by the first voltage conversion chip into a second voltage; and the third voltage conversion chip converts the first voltage output by the first voltage conversion chip into a third voltage.
2. The low temperature plasma metal activation apparatus of claim 1, wherein, The lifting platform comprises a platform surface, a motor and an output rod; the number of the motors and the number of the output rods are the same as the number of the piezoelectric transformers; the piezoelectric transformers are fixedly connected with the output rods in a one-to-one mode; the motor is arranged in the platform surface; the output rod is connected with the shaft of the motor; the motor is in one-to-one correspondence with the output rod; the control unit is electrically connected with all the motors and is used for controlling the rotating speed of the motor; and the motor rotates to drive the up-down movement of the output rod.
3. The low temperature plasma metal activation apparatus of claim 1, wherein, 4. The low temperature plasma metal activation apparatus of claim 3, wherein, The control unit comprises a controller, a logic chip, a motor control chip, a power tube driving chip, a power tube chip and an output terminal; the controller is electrically connected with the logic chip; the logic chip is electrically connected with the motor control chip, the power tube driving chip and the output terminal; the motor control chip is the same in number as the motor, and the motor control chip is electrically connected with the motor one by one; the power tube driving chip is electrically connected with the power tube chip; the power tube chip is the same in number as the piezoelectric transformer, and the power tube chip is electrically connected with the piezoelectric transformer one by one; the output terminal is electrically connected with the human-computer interaction unit; the controller is connected with a third voltage, the logic chip is connected with a second voltage, the motor control chip is connected with the second voltage, the power tube driving chip is connected with a first voltage, and the power tube chip is connected with an external power supply voltage.
5. The low temperature plasma metal activation apparatus of claim 1, wherein, The number of the piezoelectric transformers is even, and the piezoelectric transformers are arranged in rotational symmetry around the isolation cover.
6. The low temperature plasma metal activation apparatus of claim 1, wherein, The dustproof cover is arranged on the first opening of the shell and covers the first opening of the shell.
7. The low temperature plasma metal activation apparatus of claim 1, wherein, The human-computer interaction unit is fixed on the upper surface of the shell; the human-computer interaction unit comprises a touch screen and an infrared switch; the touch screen is fixed on the upper surface of the shell by screws; the touch screen is used for controlling the low-temperature plasma metal activation device to start or stop working, and displaying the working time and the plasma intensity of the low-temperature plasma metal activation device; the infrared switch passes through the second opening of the shell, and the middle part of the infrared switch is fixedly connected with the second opening; the infrared switch is used for controlling the low-temperature plasma metal activation device to start or stop working; the touch screen is electrically connected with the control unit; and the infrared switch is electrically connected with the touch screen. The dustproof cover is arranged on the first opening of the shell and covers the first opening of the shell.
Citation Information
Patent Citations
Low-temperature plasma metal activation device
CN218352788U