A method for calculating seeding power, a method for determining seeding power and a device

Abstract

The present invention provides a method for calculating seeding power, including: obtaining the last seeding power, the last average seeding pulling speed; obtaining the last shoulder height, the temperature adjustment time corresponding to the last seeding to the running time of this temperature adjustment, the weight of silicon liquid in the quartz crucible in the furnace corresponding to the last seeding, and the weight of silicon liquid corresponding to this temperature adjustment; obtaining the power change corresponding to the average seeding pulling speed change, and determining the seeding pulling speed and power change coefficient; obtaining the power change corresponding to the shoulder height change, and determining the shoulder height and power change coefficient; obtaining the power change corresponding to the running time change, and determining the running time and power change coefficient; obtaining the power change corresponding to the silicon liquid weight change, and determining the silicon liquid weight and power change coefficient; determining the seeding standard pulling speed and the shoulder standard height; inputting the above data into the seeding power calculation model, and calculating the current seeding power. The present invention improves the efficiency and accuracy of finding the seeding power.

Description

Technical Field

[0001] The present invention relates to the technical field of single crystal silicon production, and in particular to a method for calculating, determining and controlling seeding power. Background Art

[0002] The Czochralski single crystal furnace is a manufacturing equipment used to produce single crystal silicon by the Czochralski method. When the single crystal furnace is in operation, the seeding power has always been a difficult and painful point in the industry, and experienced technical workers are required to find the seeding power. Even if experienced technical workers find the seeding power, the accuracy rate is not 100%. It is rare to achieve more than 85%, and the seeding power found by different personnel is also very different.

[0003] There are currently the following difficulties:

[0004] 1. When the seeding power is not found accurately, the seeding and the following processes will be affected, causing a sharp increase in the wire breakage rate. The wire breakage increases the operating time while also increasing the cost expenditure.

[0005] 2. Experienced technical workers need time to accumulate experience, resulting in a shortage of technical workers in the industry and difficulty in recruiting, which also increases labor costs.

[0006] 3. Relying on personnel experience to adjust the temperature takes a long time and has poor accuracy. The wire breakage rate in the seeding, shoulder release and equal diameter processes increases, and the cost increases. At the same time, the management cost is also high due to the many variables. Summary of the invention

[0007] The present invention provides a method for calculating, determining and controlling seeding power, and a device thereof, so as to at least overcome one of the above difficulties.

[0008] A first aspect of an embodiment of this specification discloses a method for calculating seeding power, comprising:

[0009] Based on the last production data of the single crystal furnace, the following data is obtained:

[0010] Get the last seeding power;

[0011] Get the last average seeding speed;

[0012] Get the last shoulder height;

[0013] Get the running time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment;

[0014] Obtain the weight of silicon liquid in the quartz crucible in the furnace corresponding to the last seeding;

[0015] Get the weight of silicon liquid corresponding to this temperature adjustment;

[0016] Based on the historical production data of the single crystal furnace, the following data are obtained:

[0017] Obtain the power change corresponding to the average seeding speed change, and determine the seeding speed and power change coefficient;

[0018] Obtain the power change corresponding to the shoulder height change, and determine the shoulder height and power change coefficient;

[0019] Obtain the power change corresponding to the running time change, and determine the running time and power change coefficient;

[0020] Obtain the power change corresponding to the weight change of silicon liquid in the quartz crucible in the furnace, and determine the weight and power change coefficient of silicon liquid;

[0021] Determine the standard seeding speed and shoulder height;

[0022] The above data is input into the seeding power calculation model to calculate the seeding power for this time;

[0023] Wherein, the seeding power calculation model is:

[0024] The current seeding power = the previous seeding power + (the previous average seeding pulling speed - the standard seeding pulling speed) X the seeding pulling speed and power variation coefficient + (the standard shoulder height - the previous shoulder height) X the shoulder height and power variation coefficient + the operating time from the temperature adjustment time corresponding to the previous seeding to the current temperature adjustment X the operating time and power variation coefficient + (the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the previous seeding - the weight of the silicon liquid corresponding to the current temperature adjustment) X the silicon liquid weight and power variation coefficient.

[0025] In one embodiment disclosed in the present specification, when other data except the seeding pulling speed do not change or change within the allowable error range, the power change corresponding to the average seeding pulling speed change is obtained, and the seeding pulling speed and power change coefficient = the power change corresponding to the average seeding pulling speed change / the average seeding pulling speed change.

[0026] In one embodiment disclosed in the present specification, when other data except the shoulder height do not change or the changes are within the allowable error range, the power change corresponding to the change in the shoulder height is obtained, and the shoulder height and power change coefficient = power change corresponding to the shoulder height change / shoulder height change.

[0027] In one embodiment disclosed in the present specification, when other data except the operating time does not change or changes within the allowable error range, the power change corresponding to the operating time change is obtained, and the operating time and power change coefficient = the power change corresponding to the operating time change / the operating time change.

[0028] In one embodiment disclosed in the present specification, when other data except the weight of the silicon liquid do not change or change within the allowable error range, the power change corresponding to the weight change of the silicon liquid in the quartz crucible in the furnace is obtained, and the silicon liquid weight and power change coefficient = the power change corresponding to the weight change of the silicon liquid in the quartz crucible in the furnace / the weight change of the silicon liquid in the quartz crucible in the furnace.

[0029] A second aspect of the embodiments of this specification discloses a method for determining seeding power, comprising:

[0030] The production data of the single crystal furnace is collected once every preset sampling period;

[0031] Based on the production data of the single crystal furnace collected at least twice, the production data is statistically classified and the following data is obtained:

[0032] Obtain the power change corresponding to the average seeding speed when the shoulder height, the running time and the silicon liquid weight are within the allowable error range, and determine the seeding speed and power change coefficient;

[0033] Obtain the power change corresponding to the shoulder height when the seeding speed, running time and silicon liquid weight are within the allowable error range, and determine the shoulder height and power change coefficient;

[0034] Obtain the power change corresponding to the running time when the shoulder height is within the allowable error range, the seeding speed is within the allowable error range, and the weight of the silicon liquid is within the allowable error range, and determine the running time and power change coefficient;

[0035] Obtain the power change corresponding to the weight of the silicon liquid when the shoulder height is within the allowable error range, the running time is within the allowable error range, and the average seeding speed is within the allowable error range, and determine the silicon liquid weight and power change coefficient;

[0036] Determine the standard seeding speed and shoulder height;

[0037] When determining the seeding power this time, the following data is obtained:

[0038] Get the last seeding power;

[0039] Get the last average seeding speed;

[0040] Get the last shoulder height;

[0041] Get the running time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment;

[0042] Obtain the weight of silicon liquid in the quartz crucible in the furnace corresponding to the last seeding;

[0043] Get the weight of silicon liquid corresponding to this temperature adjustment;

[0044] Determine the seeding power for this time through the seeding power calculation model;

[0045] Wherein, the seeding power calculation model is:

[0046] The current seeding power = the previous seeding power + (the previous average seeding pulling speed - the standard seeding pulling speed) X the seeding pulling speed and power variation coefficient + (the standard shoulder height - the previous shoulder height) X the shoulder height and power variation coefficient + the operating time from the temperature adjustment time corresponding to the previous seeding to the current temperature adjustment X the operating time and power variation coefficient + (the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the previous seeding - the weight of the silicon liquid corresponding to the current temperature adjustment) X the silicon liquid weight and power variation coefficient.

[0047] In one embodiment disclosed in this specification, based on the production data of the single crystal furnace collected twice in succession, the seeding power is obtained by a seeding power calculation model and determined as the first seeding power;

[0048] Based on the first seeding power, after production is carried out, the production data of the single crystal furnace is collected once every preset sampling period;

[0049] Based on the production data of the single crystal furnace collected twice after the production with the first seeding power, the seeding power is obtained by using the seeding power calculation model, and is determined as the second seeding power;

[0050] Based on the second seeding power, after production is carried out, the production data of the single crystal furnace is collected once every preset sampling period;

[0051] Based on the production data of the single crystal furnace collected at least twice after the second seeding power is used for production, the production data is statistically classified to obtain the following data:

[0052] Obtain the power change corresponding to the average seeding speed when the shoulder height, the running time and the silicon liquid weight are within the allowable error range, and determine the seeding speed and power change coefficient;

[0053] Obtain the power change corresponding to the shoulder height when the seeding speed, running time and silicon liquid weight are within the allowable error range, and determine the shoulder height and power change coefficient;

[0054] Obtain the power change corresponding to the running time when the shoulder height is within the allowable error range, the seeding speed is within the allowable error range, and the weight of the silicon liquid is within the allowable error range, and determine the running time and power change coefficient;

[0055] Obtain the power change corresponding to the weight of the silicon liquid when the shoulder height is within the allowable error range, the running time is within the allowable error range, and the average seeding speed is within the allowable error range, and determine the silicon liquid weight and power change coefficient;

[0056] The seeding power calculation model is updated based on the seeding pulling speed and power variation coefficient, shoulder height and power variation coefficient, operation time and power variation coefficient, and silicon liquid weight and power variation coefficient obtained after production with the second seeding power.

[0057] In one embodiment disclosed in the present specification, the seeding power calculation model is updated once each time the production data of the single crystal furnace is collected after production based on the second seeding power.

[0058] A third aspect of the embodiments of this specification discloses a device for determining seeding power, comprising:

[0059] The data acquisition and determination module is used to obtain the power change corresponding to the change in the average seeding pulling speed, determine the seeding pulling speed and power variation coefficient, obtain the power change corresponding to the shoulder height change, determine the shoulder height and power variation coefficient, obtain the power change corresponding to the running time change, determine the running time and power variation coefficient, obtain the power change corresponding to the weight change of the silicon liquid in the quartz crucible in the furnace, determine the silicon liquid weight and power variation coefficient; determine the standard seeding pulling speed and the standard shoulder height;

[0060] A data acquisition module is used to obtain the last seeding power, the last average seeding pulling speed, the last shoulder height, the running time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment, the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the last seeding, and the weight of the silicon liquid corresponding to the current temperature adjustment;

[0061] A seeding power determination module is used to input the data obtained by the data acquisition determination module and the data obtained by the data acquisition module into the seeding power calculation model to obtain the seeding power of this time;

[0062] Wherein, the seeding power calculation model is:

[0063] The current seeding power = the previous seeding power + (the previous average seeding pulling speed - the standard seeding pulling speed) X the seeding pulling speed and power variation coefficient + (the standard shoulder height - the previous shoulder height) X the shoulder height and power variation coefficient + the operating time from the temperature adjustment time corresponding to the previous seeding to the current temperature adjustment X the operating time and power variation coefficient + (the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the previous seeding - the weight of the silicon liquid corresponding to the current temperature adjustment) X the silicon liquid weight and power variation coefficient.

[0064] In one embodiment disclosed in this specification, the data acquisition determination module includes:

[0065] A first acquisition and determination module is used to collect the production data of the single crystal furnace once every preset sampling period, obtain the production data of the single crystal furnace collected twice in succession, obtain the seeding power through the seeding power calculation model, and determine it as the first seeding power;

[0066] The second acquisition and determination module is used to collect the production data of the single crystal furnace once every preset sampling period after production based on the first seeding power, and obtain the production data of the single crystal furnace collected at least twice, and the production data is:

[0067] Obtain the power change corresponding to the average seeding speed when the shoulder height, the running time and the silicon liquid weight are within the allowable error range, and determine the seeding speed and power change coefficient;

[0068] Obtain the power change corresponding to the shoulder height when the seeding speed, running time and silicon liquid weight are within the allowable error range, and determine the shoulder height and power change coefficient;

[0069] Obtain the power change corresponding to the running time when the shoulder height is within the allowable error range, the seeding speed is within the allowable error range, and the weight of the silicon liquid is within the allowable error range, and determine the running time and power change coefficient;

[0070] Obtain the power change corresponding to the weight of the silicon liquid when the shoulder height is within the allowable error range, the running time is within the allowable error range, and the average seeding speed is within the allowable error range, and determine the silicon liquid weight and power change coefficient;

[0071] The seeding power determination module is used to update the seeding power calculation model based on the seeding pulling speed and power variation coefficient, shoulder height and power variation coefficient, operating time and power variation coefficient, and silicon liquid weight and power variation coefficient obtained after production at the first seeding power.

[0072] The embodiments of this specification can at least achieve the following beneficial effects:

[0073] The present invention obtains the last seeding power, the last average seeding pulling speed, the last shoulder height, the operating time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment, the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the last seeding, the weight of the silicon liquid corresponding to the current temperature adjustment, the seeding pulling speed and power variation coefficient, the shoulder height and power variation coefficient, the operating time and power variation coefficient, the silicon liquid weight and power variation coefficient, the seeding standard pulling speed and the shoulder standard height; and inputs the above data into the seeding power calculation model: the current seeding power = the last seeding power + (the last average seeding pulling speed - the seeding standard pulling speed) × The seeding power for this time can be calculated by the coefficient of variation of seeding pulling speed and power + (standard shoulder height - last shoulder height) X shoulder height and power variation coefficient + the temperature adjustment time corresponding to the last seeding to the running time of this temperature adjustment X running time and power variation coefficient + (the weight of silicon liquid in the quartz crucible in the furnace corresponding to the last seeding - the weight of silicon liquid corresponding to this temperature adjustment) X silicon liquid weight and power variation coefficient; from manually finding the seeding power to calculating the seeding power, the efficiency of finding the seeding power is improved, the accuracy of finding the seeding power is improved, the wire breakage rate is reduced, the wire breakage is reduced, and the operating cost is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0074] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0075] Figure 1 Schematic diagram of the steps of the method for calculating the seeding power involved in some embodiments of the present invention.

[0076] Figure 2 Schematic diagram of the steps of a method for determining seeding power involved in some embodiments of the present invention.

[0077] Figure 3 It is a schematic diagram of the structure of a device for determining seeding power involved in some embodiments of the present invention. DETAILED DESCRIPTION

[0078] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present invention. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0079] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the products of the present invention are conventionally placed when used, or are the orientations or positional relationships conventionally understood by those skilled in the art, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0080] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0081] In addition, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0082] The embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0083] like Figure 1 As shown, the first aspect of the embodiments of this specification discloses a method for calculating seeding power, comprising the following steps:

[0084] Step S1. Based on the last production data of the single crystal furnace, obtain the following data:

[0085] Get the last seeding power;

[0086] Get the last average seeding speed;

[0087] Get the last shoulder height;

[0088] Get the running time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment;

[0089] Obtain the weight of silicon liquid in the quartz crucible in the furnace corresponding to the last seeding;

[0090] Get the weight of silicon liquid corresponding to this temperature adjustment;

[0091] Step S2. Based on the historical production data of the single crystal furnace, obtain the following data:

[0092] Obtain the power change corresponding to the average seeding speed change, and determine the average seeding speed and power change coefficient;

[0093] Obtain the power change corresponding to the shoulder height change, and determine the shoulder height and power change coefficient;

[0094] Obtain the power change corresponding to the running time change, and determine the running time and power change coefficient;

[0095] Obtain the power change corresponding to the weight change of silicon liquid in the quartz crucible in the furnace, and determine the weight and power change coefficient of silicon liquid;

[0096] Determine the standard seeding speed and shoulder height;

[0097] Step S3. Input the above data into the seeding power calculation model to calculate the seeding power for this time;

[0098] Among them, the seeding power calculation model is:

[0099] The power of this seeding = the power of the last seeding + (the last average seeding pulling speed - the standard seeding pulling speed) X the seeding pulling speed and power variation coefficient + (the standard shoulder height - the last shoulder height) X the shoulder height and power variation coefficient + the temperature adjustment time corresponding to the last seeding to the running time of this temperature adjustment X the running time and power variation coefficient + (the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the last seeding - the weight of the silicon liquid corresponding to this temperature adjustment) X the silicon liquid weight and power variation coefficient.

[0100] It should be understood that there is no fixed execution order for S1 and S2. They can be executed in any order or simultaneously. After executing S1 and S2, S3 can be executed. After substituting the data into the seeding power calculation model, the seeding power for this time can be calculated.

[0101] When determining the above coefficients, the following should be noted:

[0102] When other data except the seeding pulling speed do not change or the changes are within the allowable error range (power difference within 0.5kw, shoulder height difference within 10mm, running time difference within 5 hours, silicon liquid weight difference within 20kg), obtain the power change corresponding to the average seeding pulling speed change. The seeding pulling speed and power change coefficient = power change corresponding to the average seeding pulling speed change / average seeding pulling speed change.

[0103] When other data except the shoulder height do not change or the changes are within the allowable error range (power difference within 0.5kw, average seeding speed difference within 10mm per hour, running time difference within 5 hours, silicon liquid weight difference within 20kg), obtain the power change corresponding to the shoulder height change. The shoulder height and power change coefficient = power change corresponding to the shoulder height change / shoulder height change.

[0104] When other data except the running time do not change or the changes are within the allowable error range (power difference within 0.5kw, shoulder height difference within 10mm, average seeding speed difference within 10mm per hour, silicon liquid weight difference within 20kg), obtain the power change corresponding to the running time change. The running time and power change coefficient = power change corresponding to the running time change / running time change.

[0105] When other data except the weight of silicon liquid do not change or the changes are within the allowable error range (power difference within 0.5kw, shoulder height difference within 10mm, average seeding speed difference within 10mm per hour, and running time difference within 5 hours), obtain the power change corresponding to the weight change of silicon liquid in the quartz crucible in the furnace. The coefficient of silicon liquid weight and power change = power change corresponding to the weight change of silicon liquid in the quartz crucible in the furnace / weight change of silicon liquid in the quartz crucible in the furnace.

[0106] like Figure 2 As shown, the second aspect of the embodiments of this specification discloses a method for determining seeding power, comprising:

[0107] Step A1. After each preset sampling period, the production data of the single crystal furnace is collected once;

[0108] Step A2. Based on the production data of the single crystal furnace collected at least twice, statistically classify the production data and obtain the following data:

[0109] Obtain the power change corresponding to the average seeding speed when the shoulder height, the running time and the silicon liquid weight are within the allowable error range, and determine the seeding speed and power change coefficient;

[0110] Obtain the power change corresponding to the shoulder height when the seeding speed, running time and silicon liquid weight are within the allowable error range, and determine the shoulder height and power change coefficient;

[0111] Obtain the power change corresponding to the running time when the shoulder height is within the allowable error range, the seeding speed is within the allowable error range, and the weight of the silicon liquid is within the allowable error range, and determine the running time and power change coefficient;

[0112] Obtain the power change corresponding to the weight of the silicon liquid when the shoulder height is within the allowable error range, the running time is within the allowable error range, and the average seeding speed is within the allowable error range, and determine the silicon liquid weight and power change coefficient;

[0113] Determine the standard seeding speed and shoulder height;

[0114] Step A3. When determining the seeding power this time, obtain the following data:

[0115] Get the last seeding power;

[0116] Get the last average seeding speed;

[0117] Get the last shoulder height;

[0118] Get the running time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment;

[0119] Obtain the weight of silicon liquid in the quartz crucible in the furnace corresponding to the last seeding;

[0120] Get the weight of silicon liquid corresponding to this temperature adjustment;

[0121] Step A4. Determine the seeding power for this time by using the seeding power calculation model;

[0122] Among them, the seeding power calculation model is:

[0123] The power of this seeding = the power of the last seeding + (the last average seeding pulling speed - the standard seeding pulling speed) X the seeding pulling speed and power variation coefficient + (the standard shoulder height - the last shoulder height) X the shoulder height and power variation coefficient + the temperature adjustment time corresponding to the last seeding to the running time of this temperature adjustment X the running time and power variation coefficient + (the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the last seeding - the weight of the silicon liquid corresponding to this temperature adjustment) X the silicon liquid weight and power variation coefficient.

[0124] In this embodiment, multiple sampling cycles are used to make data collection more regular, which is beneficial to the subsequent acquisition of various data, can improve the accuracy of the acquired data, effectively eliminate some invalid data, and make the determined seeding power more accurate.

[0125] In some embodiments, based on the production data of the single crystal furnace collected twice in succession, the seeding power is obtained by a seeding power calculation model and determined as the first seeding power;

[0126] Based on the first seeding power, after production is carried out, the production data of the single crystal furnace is collected once every preset sampling period;

[0127] Based on the production data of the single crystal furnace collected twice after the production with the first seeding power, the seeding power is obtained by using the seeding power calculation model, and is determined as the second seeding power;

[0128] Based on the second seeding power, after production is carried out, the production data of the single crystal furnace is collected once every preset sampling period;

[0129] Based on the production data of the single crystal furnace collected at least twice after the second seeding power is used for production, the production data is statistically classified to obtain the following data:

[0130] Obtain the power change corresponding to the average seeding speed when the shoulder height, the running time and the silicon liquid weight are within the allowable error range, and determine the seeding speed and power change coefficient;

[0131] Obtain the power change corresponding to the shoulder height when the seeding speed, running time and silicon liquid weight are within the allowable error range, and determine the shoulder height and power change coefficient;

[0132] Obtain the power change corresponding to the running time when the shoulder height is within the allowable error range, the seeding speed is within the allowable error range, and the weight of the silicon liquid is within the allowable error range, and determine the running time and power change coefficient;

[0133] Obtain the power change corresponding to the weight of the silicon liquid when the shoulder height is within the allowable error range, the running time is within the allowable error range, and the average seeding speed is within the allowable error range, and determine the silicon liquid weight and power change coefficient;

[0134] The seeding power calculation model is updated based on the seeding pulling speed and power variation coefficient, shoulder height and power variation coefficient, operating time and power variation coefficient, and silicon liquid weight and power variation coefficient obtained after production with the second seeding power.

[0135] In this embodiment, production data is first collected within a sampling period, and the seeding power is obtained through a seeding power calculation model, which is determined as the first seeding power;

[0136] Then, after the first seeding power is used for production, production data is collected within a sampling period, and the seeding power is obtained through a seeding power calculation model, and is determined as the second seeding power;

[0137] Next, after using the second seeding power for production, production data is collected within the sampling period, and the seeding power calculation model is updated based on the seeding pulling speed and power variation coefficient, shoulder height and power variation coefficient, operating time and power variation coefficient, and silicon liquid weight and power variation coefficient obtained from the production data, so that the seeding power subsequently calculated by the seeding power calculation model is more accurate.

[0138] In some embodiments, the seeding power calculation model is updated once each time the production data of the single crystal furnace is collected after production based on the second seeding power.

[0139] In this embodiment, by continuously updating the seeding power calculation model, the seeding power calculated by the seeding power calculation model is closer to the complex and changeable production conditions in actual production, which is beneficial to improving the accuracy of the seeding power determined each time in the complex and changeable actual production scenarios.

[0140] like Figure 3 As shown, the third aspect of the embodiments of this specification discloses a device for determining seeding power, comprising:

[0141] The data acquisition and determination module is used to obtain the power change corresponding to the change in the average seeding pulling speed, determine the seeding pulling speed and power variation coefficient, obtain the power change corresponding to the shoulder height change, determine the shoulder height and power variation coefficient, obtain the power change corresponding to the running time change, determine the running time and power variation coefficient, obtain the power change corresponding to the weight change of the silicon liquid in the quartz crucible in the furnace, determine the silicon liquid weight and power variation coefficient; determine the standard seeding pulling speed and the standard shoulder height;

[0142] A data acquisition module is used to obtain the last seeding power, the last average seeding pulling speed, the last shoulder height, the running time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment, the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the last seeding, and the weight of the silicon liquid corresponding to the current temperature adjustment;

[0143] A seeding power determination module is used to input the data obtained by the data acquisition determination module and the data obtained by the data acquisition module into the seeding power calculation model to obtain the seeding power of this time;

[0144] Among them, the seeding power calculation model is:

[0145] The power of this seeding = the power of the last seeding + (the last average seeding pulling speed - the standard seeding pulling speed) X the seeding pulling speed and power variation coefficient + (the standard shoulder height - the last shoulder height) X the shoulder height and power variation coefficient + the temperature adjustment time corresponding to the last seeding to the running time of this temperature adjustment X the running time and power variation coefficient + (the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the last seeding - the weight of the silicon liquid corresponding to this temperature adjustment) X the silicon liquid weight and power variation coefficient.

[0146] In some embodiments, the data acquisition determination module includes:

[0147] A first acquisition and determination module is used to collect the production data of the single crystal furnace once every preset sampling period, obtain the production data of the single crystal furnace collected twice in succession, obtain the seeding power through the seeding power calculation model, and determine it as the first seeding power;

[0148] The second acquisition and determination module is used to collect the production data of the single crystal furnace once every preset sampling period after production based on the first seeding power, and obtain the production data of the single crystal furnace collected at least twice, and the production data is:

[0149] Obtain the power change corresponding to the average seeding speed when the shoulder height, the running time and the silicon liquid weight are within the allowable error range, and determine the seeding speed and power change coefficient;

[0150] Obtain the power change corresponding to the shoulder height when the seeding speed, running time and silicon liquid weight are within the allowable error range, and determine the shoulder height and power change coefficient;

[0151] Obtain the power change corresponding to the running time when the shoulder height is within the allowable error range, the seeding speed is within the allowable error range, and the weight of the silicon liquid is within the allowable error range, and determine the running time and power change coefficient;

[0152] Obtain the power change corresponding to the weight of the silicon liquid when the shoulder height is within the allowable error range, the running time is within the allowable error range, and the average seeding speed is within the allowable error range, and determine the silicon liquid weight and power change coefficient;

[0153] The seeding power determination module is used to update the seeding power calculation model based on the seeding pulling speed and power variation coefficient, shoulder height and power variation coefficient, operating time and power variation coefficient, and silicon liquid weight and power variation coefficient obtained after production at the first seeding power.

[0154] In a specific application, it is as follows:

[0155] Single crystal furnace number Weight of silicon liquid corresponding to the last seeding (kg) Last seeding power (kw) Last average seeding speed (mm / h) Last shoulder height (mm) The running time from the last temperature adjustment time of seeding to the current temperature adjustment time (h) The weight of silicone liquid corresponding to this temperature adjustment (remaining weight) (kg) Calculated power (this seeding power) (kw) 1 932 68 308 107 15 890 69.7 2 916 68.5 229 139.8 42 912 68.4 3 817.7 70 219 149.5 20 735.3 69.7

[0156] Based on the historical production data of single crystal furnace No. 3, the calculated variation coefficient of seeding speed and power is 0.007, the variation coefficient of shoulder height and power is 0.035, the variation coefficient of operation time and power is 0.003, and the variation coefficient of silicon liquid weight and power is 0.0035. The seeding power of single crystal furnace No. 3 is:

[0157] 70+(219-235)X0.007+(135-149.5)X0.035+20X0.003+(817.7-735.3)X0.0035=69.7289.

[0158] In the formula, 235 is the standard crystal pulling speed, which can be adjusted according to the different standards of different single crystal furnaces.

[0159] In the formula, 135 is the standard height of the shoulder, which can be adjusted according to the different standards of different single crystal furnaces.

[0160] In summary, multiple specific embodiments of the present invention are disclosed. Under the condition that there is no self-contradiction, the various embodiments can be freely combined to form new embodiments, that is, the embodiments belonging to the replacement schemes can be freely replaced but cannot be combined with each other; the embodiments that do not belong to the replacement schemes can be combined with each other, and these new embodiments also belong to the essential content of the present invention.

[0161] The above embodiments describe multiple specific implementations of the present invention, but those skilled in the art should understand that various changes or modifications may be made to these implementations without departing from the principles and essence of the present invention, but these changes and modifications are all within the scope of protection of the present invention.

Claims

1. A method for calculating seeding power, characterized in that: include: Based on the last production data of the single crystal furnace, the following data is obtained: Get the last seeding power; Get the last average seeding speed; Get the last shoulder height; Get the running time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment; Obtain the weight of silicon liquid in the quartz crucible in the furnace corresponding to the last seeding; Get the weight of silicon liquid corresponding to this temperature adjustment; Based on the historical production data of the single crystal furnace, the following data are obtained: Obtain the power change corresponding to the average seeding speed change, and determine the seeding speed and power change coefficient; Obtain the power change corresponding to the shoulder height change, and determine the shoulder height and power change coefficient; Obtain the power change corresponding to the running time change, and determine the running time and power change coefficient; Obtain the power change corresponding to the weight change of silicon liquid in the quartz crucible in the furnace, and determine the weight and power change coefficient of silicon liquid; Determine the standard seeding speed and shoulder height; The above data is input into the seeding power calculation model to calculate the seeding power for this time; Wherein, the seeding power calculation model is: The current seeding power = the previous seeding power + (the previous average seeding pulling speed - the standard seeding pulling speed) X the seeding pulling speed and power variation coefficient + (the standard shoulder height - the previous shoulder height) X the shoulder height and power variation coefficient + the operating time from the temperature adjustment time corresponding to the previous seeding to the current temperature adjustment X the operating time and power variation coefficient + (the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the previous seeding - the weight of the silicon liquid corresponding to the current temperature adjustment) X the silicon liquid weight and power variation coefficient.

2. The method for calculating seeding power according to claim 1, characterized in that: When other data except the seeding pulling speed do not change or the changes are within the allowable error range, obtain the power change corresponding to the average seeding pulling speed change. The seeding pulling speed and power change coefficient = power change corresponding to the average seeding pulling speed change / average seeding pulling speed change.

3. The method for calculating seeding power according to claim 1, characterized in that: When other data except the shoulder height do not change or the changes are within the allowable error range, obtain the power change corresponding to the change in shoulder height. The shoulder height and power change coefficient = power change corresponding to the change in shoulder height / shoulder height change.

4. The method for calculating seeding power according to claim 1, characterized in that: When other data except the running time do not change or the changes are within the allowable error range, the power change corresponding to the running time change is obtained. The running time and power change coefficient = the power change corresponding to the running time change / the running time change.

5. The method for calculating seeding power according to claim 1, characterized in that: When other data except the weight of silicon liquid do not change or change within the allowable error range, obtain the power change corresponding to the weight change of silicon liquid in the quartz crucible in the furnace. The coefficient of silicon liquid weight and power change = power change corresponding to the weight change of silicon liquid in the quartz crucible in the furnace / weight change of silicon liquid in the quartz crucible in the furnace.

6. A method for determining seeding power, characterized in that: include: The production data of the single crystal furnace is collected once every preset sampling period; Based on the production data of the single crystal furnace collected at least twice, the production data is statistically classified and the following data is obtained: Obtain the power change corresponding to the average seeding speed when the shoulder height, the running time and the silicon liquid weight are within the allowable error range, and determine the seeding speed and power change coefficient; Obtain the power change corresponding to the shoulder height when the seeding speed, running time and silicon liquid weight are within the allowable error range, and determine the shoulder height and power change coefficient; Obtain the power change corresponding to the running time when the shoulder height is within the allowable error range, the seeding speed is within the allowable error range, and the weight of the silicon liquid is within the allowable error range, and determine the running time and power change coefficient; Obtain the power change corresponding to the weight of the silicon liquid when the shoulder height is within the allowable error range, the running time is within the allowable error range, and the average seeding speed is within the allowable error range, and determine the silicon liquid weight and power change coefficient; Determine the standard seeding speed and shoulder height; When determining the seeding power this time, the following data is obtained: Get the last seeding power; Get the last average seeding speed; Get the last shoulder height; Get the running time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment; Obtain the weight of silicon liquid in the quartz crucible in the furnace corresponding to the last seeding; Get the weight of silicon liquid corresponding to this temperature adjustment; Determine the seeding power for this time through the seeding power calculation model; Wherein, the seeding power calculation model is: The current seeding power = the previous seeding power + (the previous average seeding pulling speed - the standard seeding pulling speed) X the seeding pulling speed and power variation coefficient + (the standard shoulder height - the previous shoulder height) X the shoulder height and power variation coefficient + the operating time from the temperature adjustment time corresponding to the previous seeding to the current temperature adjustment X the operating time and power variation coefficient + (the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the previous seeding - the weight of the silicon liquid corresponding to the current temperature adjustment) X the silicon liquid weight and power variation coefficient.

7. The method for determining seeding power according to claim 6, characterized in that: Based on the production data of the single crystal furnace collected twice in succession, the seeding power is obtained through the seeding power calculation model and determined as the first seeding power; Based on the first seeding power, after production is carried out, the production data of the single crystal furnace is collected once every preset sampling period; Based on the production data of the single crystal furnace collected twice after the production with the first seeding power, the seeding power is obtained by using the seeding power calculation model, and is determined as the second seeding power; Based on the second seeding power, after production is carried out, the production data of the single crystal furnace is collected once every preset sampling period; Based on the production data of the single crystal furnace collected at least twice after the second seeding power is used for production, the production data is statistically classified to obtain the following data: Obtain the power change corresponding to the average seeding speed when the shoulder height, the running time and the silicon liquid weight are within the allowable error range, and determine the seeding speed and power change coefficient; Obtain the power change corresponding to the shoulder height when the seeding speed, running time and silicon liquid weight are within the allowable error range, and determine the shoulder height and power change coefficient; Obtain the power change corresponding to the running time when the shoulder height is within the allowable error range, the seeding speed is within the allowable error range, and the weight of the silicon liquid is within the allowable error range, and determine the running time and power change coefficient; Obtain the power change corresponding to the weight of the silicon liquid when the shoulder height is within the allowable error range, the running time is within the allowable error range, and the average seeding speed is within the allowable error range, and determine the silicon liquid weight and power change coefficient; The seeding power calculation model is updated based on the seeding pulling speed and power variation coefficient, shoulder height and power variation coefficient, operation time and power variation coefficient, and silicon liquid weight and power variation coefficient obtained after production with the second seeding power.

8. The method for determining seeding power according to claim 7, characterized in that: The seeding power calculation model is updated once each time the production data of the single crystal furnace is collected after production based on the second seeding power.

9. A device for determining seeding power, characterized in that: include: The data acquisition and determination module is used to obtain the power change corresponding to the change in the average seeding pulling speed, determine the seeding pulling speed and power variation coefficient, obtain the power change corresponding to the shoulder height change, determine the shoulder height and power variation coefficient, obtain the power change corresponding to the running time change, determine the running time and power variation coefficient, obtain the power change corresponding to the weight change of the silicon liquid in the quartz crucible in the furnace, determine the silicon liquid weight and power variation coefficient; determine the standard seeding pulling speed and the standard shoulder height; A data acquisition module is used to obtain the last seeding power, the last average seeding pulling speed, the last shoulder height, the running time from the temperature adjustment time corresponding to the last seeding to the current temperature adjustment, the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the last seeding, and the weight of the silicon liquid corresponding to the current temperature adjustment; A seeding power determination module is used to input the data obtained by the data acquisition determination module and the data obtained by the data acquisition module into the seeding power calculation model to obtain the seeding power of this time; Wherein, the seeding power calculation model is: The current seeding power = the previous seeding power + (the previous average seeding pulling speed - the standard seeding pulling speed) X the seeding pulling speed and power variation coefficient + (the standard shoulder height - the previous shoulder height) X the shoulder height and power variation coefficient + the operating time from the temperature adjustment time corresponding to the previous seeding to the current temperature adjustment X the operating time and power variation coefficient + (the weight of the silicon liquid in the quartz crucible in the furnace corresponding to the previous seeding - the weight of the silicon liquid corresponding to the current temperature adjustment) X the silicon liquid weight and power variation coefficient.

10. The device for determining seeding power according to claim 9, characterized in that: The data acquisition determination module comprises: A first acquisition and determination module is used to collect the production data of the single crystal furnace once every preset sampling period, obtain the production data of the single crystal furnace collected twice in succession, obtain the seeding power through the seeding power calculation model, and determine it as the first seeding power; The second acquisition and determination module is used to collect the production data of the single crystal furnace once every preset sampling period after production based on the first seeding power, and obtain the production data of the single crystal furnace collected at least twice, and the production data is: Obtain the power change corresponding to the average seeding speed when the shoulder height, the running time and the silicon liquid weight are within the allowable error range, and determine the seeding speed and power change coefficient; Obtain the power change corresponding to the shoulder height when the seeding speed, running time and silicon liquid weight are within the allowable error range, and determine the shoulder height and power change coefficient; Obtain the power change corresponding to the running time when the shoulder height is within the allowable error range, the seeding speed is within the allowable error range, and the weight of the silicon liquid is within the allowable error range, and determine the running time and power change coefficient; Obtain the power change corresponding to the weight of the silicon liquid when the shoulder height is within the allowable error range, the running time is within the allowable error range, and the average seeding speed is within the allowable error range, and determine the silicon liquid weight and power change coefficient; The seeding power determination module is used to update the seeding power calculation model based on the seeding pulling speed and power variation coefficient, shoulder height and power variation coefficient, operating time and power variation coefficient, and silicon liquid weight and power variation coefficient obtained after production with the first seeding power.

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