A heater and hot zone for a single crystal furnace

Abstract

This invention discloses a heater and a hot zone for a single crystal furnace, relating to the field of single crystal manufacturing technology. It provides a technical solution to reduce the oxygen content of single crystal silicon by decreasing the heating zone of the heater without shortening its heating area. The heater provided by this invention is applied in the hot zone of a single crystal furnace. The heater is disposed on the outer periphery of a crucible in the hot zone of the single crystal furnace and is used to heat at least the surface of the molten silicon in the crucible. The heater includes: multiple heating zones and multiple slit zones, each slit zone being connected between two adjacent heating zones; the openings of the multiple slit zones have the same opening direction, and the width of the slit zone is greater than or equal to the width of the heating zone.

Description

Technical Field

[0001] This invention relates to the field of single crystal manufacturing technology, and in particular to a heater and a single crystal furnace hot zone. Background Technology

[0002] During the Czochralski single crystal growth process, the oxygen content mainly comes from the reaction between the quartz crucible and the molten silicon contained in the quartz crucible to generate SiO. Most of the oxygen evaporates in the form of SiO gas and is discharged with the gas circulation system in the single crystal furnace. The remaining oxygen that is not discharged in time will re-enter the molten silicon and accumulate on the solid-liquid crystallization surface of the crucible, entering the single crystal silicon as the crystal grows.

[0003] When oxygen enters the monocrystalline silicon during crystal growth, the pulled monocrystalline silicon will have various defects. Therefore, reducing the oxygen content of monocrystalline silicon is a problem that urgently needs to be solved.

[0004] Currently, the heating zone of the heater is shortened to reduce the reaction area between the heater and molten silicon, thereby reducing oxygen production. However, this leads to a concentration of the heating zone, which reduces the heater's lifespan and increases its operating costs. Summary of the Invention

[0005] Based on this, the purpose of the present invention is to provide a heater and a single crystal furnace hot zone, so as to provide a technical solution to reduce the heating zone of the heater without shortening the heating zone of the heater, thereby reducing the oxygen content of single crystal silicon.

[0006] In a first aspect, the present invention provides a heater applied in the hot zone of a single crystal furnace. The heater is disposed on the outer periphery of a crucible in the hot zone of the single crystal furnace and is used to heat at least the surface of the molten silicon in the crucible.

[0007] The heater includes multiple heating zones and multiple slit zones, each slit zone being connected between two adjacent heating zones; the openings of the multiple slit zones have the same opening direction, and the width of the slit zone is greater than or equal to the width of the heating zone.

[0008] With the above-described solution, the heater provided by this invention includes multiple heating zones and multiple slit zones, with each slit zone connected between two adjacent heating zones. In other words, the heating zones and slit zones are arranged alternately, resulting in a more concentrated heat generation across the entire heater. This reduces the heater's radiant area onto the crucible, weakens thermal convection in the molten silicon, reduces oxygen production, and consequently minimizes defects in the monocrystalline silicon. Furthermore, this invention reduces the effective heating zone of the heater by arranging the heating zones and slit zones alternately. Compared to shortening the heating zone in existing technologies, this avoids excessive concentration of the heating zone, thus not reducing heater lifespan or increasing heater cost.

[0009] Furthermore, in this invention, multiple slit areas have the same opening direction, and the width of the slit areas is greater than the width of the heating area. Based on this, since the heating area and slit areas are arranged alternately, and multiple slit areas have the same opening direction, and the width of the slit areas is greater than the width of the heating area, the heating area of ​​one heater can be nested into the slit area of ​​another heater. Therefore, during heater manufacturing, a single complete blank can be processed into two identical heaters, thereby increasing the heater yield and reducing the heater's operating cost.

[0010] In one possible implementation, multiple heating zones have the same dimensional parameters, and multiple slit zones have the same dimensional parameters.

[0011] When the above technical solution is adopted, since multiple heating zones have the same dimensional parameters and multiple slit zones have the same dimensional parameters, the complexity of the blank can be simplified when manufacturing the heater.

[0012] In one possible implementation, the heating zone includes at least one heating element, and the opening depth of the slit zone matches the height of the at least one heating element in the heating zone; wherein the height of the heating element is the size of the heating element in a direction perpendicular to the arrangement direction of the plurality of heating zones and the plurality of slit zones.

[0013] When the above technical solution is adopted, if the opening depth of the slit area matches the height of at least one heating element in the heating zone, the heating zone can be nested into the slit area during the fabrication of the heater, thereby saving fabrication space and blank material.

[0014] Furthermore, when the heating zone includes multiple heating elements, the multiple heating elements are arranged in parallel and connected end-to-end by a first connector. Along the arrangement direction of at least one heating element, at least one end of the heating element is provided with a chamfer.

[0015] When the above technical solution is adopted, when at least one end of the heating element is chamfered, the area of ​​the heating element can be reduced, thereby increasing the resistance of the heating element. As a result, when the heating element is energized, the heating efficiency per unit area of ​​the heating element can be increased.

[0016] In one possible implementation, the slit area includes a second connector located on the side of the slit area opposite to the opening of the slit area, for connecting two adjacent heating zones.

[0017] When the above technical solution is adopted, the second connector is used to connect two adjacent heating zones, thereby forming a stable integral structure with multiple heating zones and multiple slit zones.

[0018] In one possible implementation, multiple heating zones and multiple slit zones are alternately connected to form a shape that matches the crucible in the hot zone of the single crystal furnace.

[0019] When the above technical solution is adopted, after multiple heating zones and multiple slit zones are alternately connected, they are enclosed to form a shape that matches the crucible in the hot zone of the single crystal furnace, so as to adapt to the shape of the crucible in the hot zone of the single crystal furnace, thereby heating the silicon material in the crucible.

[0020] In one possible implementation, the heater further includes at least two support members and at least two support member connecting structures; each support member is connected to a corresponding support member connecting structure via a detachable connector. Each support member connecting structure is disposed between a target heating zone of the heater and a slit zone adjacent to the target heating zone, wherein the target heating zone is one of the plurality of heating zones.

[0021] When the heater includes two support connection structures, the two support connection structures are located at symmetrical positions of the heater.

[0022] Alternatively, when the heater includes more than two support connection structures, the multiple support connection structures are evenly arranged at corresponding positions of the heater along the circumference of the heater.

[0023] When the above technical solution is adopted, the support member is connected to the support member connection structure through a detachable connector to support the heater. Furthermore, for hot zones at different heights, the support member can be disassembled and replaced without affecting other hot zone components, thus further saving costs.

[0024] Furthermore, the aforementioned support connection structure allows the heater to be more stably positioned within the hot zone of the single crystal furnace.

[0025] In one possible implementation, each of the support member connecting heating zone structures includes a connecting area and a connecting opening area; the width of the connecting opening area is greater than or equal to the width of the connecting area.

[0026] Furthermore, the connection opening areas of at least two support member connection structures have the same opening direction.

[0027] The connecting opening area and the connecting area are arranged along the direction of the multiple heating areas and the multiple slit areas; the opening depth of the connecting opening area is greater than or equal to the height of the connecting area.

[0028] Alternatively, the connecting opening area and the connecting area are arranged on the heater surface in a direction perpendicular to the arrangement of multiple heating areas and multiple slit areas, and the minimum opening depth of the connecting opening area is greater than or equal to the height of the connecting area.

[0029] When the above technical solution is adopted, since the connection opening areas of at least two support member connection structures have the same opening direction, and the width of the connection opening area is greater than or equal to the width of the connection area, and the opening depth of the connection opening area is greater than or equal to the height of the connection area, the support member connection structure in the present invention can be adapted to the structure of the heater of the present invention, so that the heating area of ​​one heater in two identical heaters can be nested into the slit area of ​​the other heater. Thus, when manufacturing the heater, a complete blank can be processed into two identical heaters, thereby improving the heater output ratio and reducing the heater usage cost.

[0030] Secondly, the present invention also discloses a single crystal furnace hot zone, including the aforementioned heater.

[0031] The beneficial effects of the second aspect and its various implementations in this invention are the same as those of the first aspect or any possible implementation of the first aspect, and will not be repeated here. Attached Figure Description

[0032] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0033] Figure 1 A structural diagram of a heater provided in an embodiment of the present invention is shown;

[0034] Figure 2 This diagram illustrates a structure of a single-body substrate with two heaters, according to an embodiment of the present invention.

[0035] Figure 3 A structural diagram of another heater provided in an embodiment of the present invention is shown;

[0036] Figure 4 This diagram illustrates another structural diagram of a single-body structure with two heaters provided by an embodiment of the present invention;

[0037] Figure 5 This diagram illustrates a structural schematic of a heater support connection structure provided in an embodiment of the present invention.

[0038] Figure 6 A schematic diagram of a heater support connection structure provided in an embodiment of the present invention is shown.

[0039] Wherein, 1-first heater, 2-second heater, 3-third heater, 4-fourth heater, 10-heating zone, 11-heating element, 12-heating element, 13-chamfer, 20-slit area, 30-support connection structure, 101-heating element, 102-heating element, 103-first connector, 104-narrow opening, 105-heating element, 106-heating element, 107-heating element, 108-heating element, 109-first connector, 1010-first connector, 1011-first connector, 201-opening of slit area, 202-second connector, 301-connection area, 302-connection opening area. Detailed Implementation

[0040] Embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0041] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified. "Several" means one or more, unless otherwise explicitly specified.

[0042] During the Czochralski single crystal growth process, the oxygen content mainly comes from the reaction between the quartz crucible and the molten silicon contained in the quartz crucible to generate SiO. Most of the oxygen evaporates in the form of SiO gas and is discharged with the gas circulation system in the single crystal furnace. The remaining oxygen that is not discharged in time will re-enter the molten silicon and accumulate on the solid-liquid crystallization surface of the crucible, entering the single crystal silicon as the crystal grows.

[0043] When oxygen enters the monocrystalline silicon during crystal growth, the pulled monocrystalline silicon will have various defects. Therefore, reducing the oxygen content of monocrystalline silicon is a problem that urgently needs to be solved.

[0044] Currently, the heating zone of the heater is shortened to reduce the reaction area between the heater and molten silicon, thereby reducing oxygen production. However, this leads to a concentration of the heating zone, which reduces the heater's lifespan and increases its operating costs.

[0045] Based on this, embodiments of the present invention disclose a heater to provide a technical solution for reducing the heating zone of the heater without shortening the heating zone, thereby reducing the oxygen content of monocrystalline silicon, thus solving the above-mentioned technical problems.

[0046] The heater provided in this embodiment of the invention is disposed on the outer periphery of the crucible in the hot zone of the single crystal furnace, and is used to heat at least the surface of the molten silicon in the crucible to ensure continuous pulling of single crystal silicon.

[0047] Reference Figure 1 and Figure 3 The aforementioned heater includes multiple heating zones 10 and multiple slit zones 20, each slit zone 20 being connected between two adjacent heating zones 10. That is, the heating zones 10 and slit zones 20 are alternately connected. Based on this, the heat generation of the entire heater's heating zones 10 is more concentrated, reducing the heater's radiation area on the crucible, weakening thermal convection in the molten silicon, reducing oxygen production, and thus reducing defects in the single-crystal silicon. In practice, due to the heater structure in this embodiment, the oxygen content is reduced by 1.2 ppma.

[0048] Furthermore, the embodiments of the present invention reduce the effective heating area of ​​the heater by arranging the heating zone 10 and the slit zone 20 at intervals. Compared with the prior art, which shortens the heating zone of the heater, the heating zone will not be too concentrated, so it will not reduce the life of the heater or increase the cost of the heater.

[0049] Furthermore, refer to Figure 1 and Figure 3 Multiple slit areas 20 have the same opening direction, and the width of each slit area 20 is greater than or equal to the width of the heating area 10. Based on this, refer to... Figure 2 In two identical heaters, the heating zone of the first heater 1 can be nested within the slit zone of the second heater 2. Alternatively, refer to... Figure 4 In this invention, the heating zone of the third heater 3 can be nested within the slit zone of the fourth heater 4. Therefore, during heater manufacturing, a single complete blank can be processed into two identical heaters, thereby increasing the heater output ratio and reducing the heater's operating cost. In practical applications, when manufacturing the heater provided in this embodiment of the invention, since a single complete blank can be processed into two identical heaters, the cost can be reduced by 50%.

[0050] It is understandable that, in order to reduce the difficulty of manufacturing the heater and simplify the fabrication of the heater blank, reference is made. Figure 1 or Figure 3 In this embodiment of the invention, the heater has multiple heating zones 10 with the same dimensional parameters, and multiple slit zones 20 with the same dimensional parameters.

[0051] Reference Figure 1 or Figure 3The dimensional parameters of the plurality of heating zones 10 may include the height and width of the plurality of heating zones 10. The dimensional parameters of the plurality of slit zones 20 may include the opening depth and opening width of the plurality of slit zones 20. Specifically, along the arrangement direction of the plurality of heating zones 10 and the plurality of slit zones 20, the dimension of the heating zone 10 is its width, the dimension of the slit zone 20 is its opening width, the dimension perpendicular to the width direction of the heating zone 10 is its height, and the dimension perpendicular to the opening width direction of the slit zone 20 is its opening depth.

[0052] In this embodiment of the invention, the heating zone includes at least one heating element, and the opening depth of the slit zone matches the height of the at least one heating element in the heating zone. The height of the heating element is defined as its dimension along a direction perpendicular to the arrangement direction of the plurality of heating zones and the plurality of slit zones. Therefore, when manufacturing the heater, the heating zone can be nested snugly into the slit zone, thereby saving manufacturing space and preform material.

[0053] Reference Figure 1 Direction A is the arrangement direction of the multiple heating zones 10 and multiple slit zones 20. Direction B is the height direction of the heating elements (101, 102) or heating zones 10 or slit zones 20, and direction B is perpendicular to direction A. Direction C is the width direction of the slit zones 20 or heating zones 10, and direction C is perpendicular to direction B.

[0054] When the heating zone includes multiple heating elements, the multiple heating elements are arranged in parallel and connected end to end by the first connector.

[0055] For example, refer to Figure 1 A heating zone 10 includes two parallel heating elements 101 and 102. At the same end, the two heating elements 101 and 102 are connected by a first connector 103. The other ends of the two heating elements form a narrow opening 104. In this case, the opening width of the slit area 20 is greater than the sum of the widths of the two heating elements 101 and 102 and the width of the narrow opening 104. The opening width of the slit area 20 is the opening size of the slit area 20 along the arrangement direction of the plurality of heating zones 10 and the plurality of slit areas 20. The width of the heating zone 10 is the size of the heating zone 10 along the arrangement direction of the plurality of heating zones 10 and the plurality of slit areas 20.

[0056] The width of the heating elements (101, 102) is the size of the heating elements along the arrangement direction of the multiple heating zones 10 and the multiple slit zones 20. The width of the narrow opening 104 is the size of the narrow opening 104 along the arrangement direction of the multiple heating zones 10 and the multiple slit zones 20.

[0057] For example, Figure 3This is a schematic diagram of another heater provided in an embodiment of the present invention. It is formed by alternating sequential processing of heating zone 1 and slit zone. Unlike the previous diagram where two heating elements are nested in the slit zone, this heater has four heating elements nested in the wide slit zone. It can be understood that as long as the nesting processing is satisfied, or other modified nesting methods are used, any equal changes or improvements made to the number of heating elements within the scope of this invention should still fall within the scope of this patent. Specifically, Figure 3 One heating zone 10 includes four heating elements 105, 106, 107, and 108, which are arranged in parallel and connected end-to-end by three first connectors 109, 1010, and 1011. Since a narrow opening is formed between every two heating elements, three narrow openings are formed between the four heating elements. At this time, the opening width of the slit area is greater than the sum of the widths of the four heating elements and the widths of the three narrow openings, so that the slit area can be nested within the heating zone.

[0058] The heating element in the heating zone of the heater and the first connecting element are both made of carbon-carbon composite material or graphite.

[0059] In practice, refer to Figure 1 The slit area 20 is formed by two heating elements 11 and 12 that are closer to the slit area in two adjacent heating areas. The slit area 20 also includes a second connector 202 located on the side of the slit area 20 away from the opening 201 of the slit area, for connecting two adjacent heating areas, thereby forming a stable integral structure with multiple heating areas and multiple slit areas.

[0060] In one possible implementation, refer to Figure 1 Along the arrangement direction of multiple heating elements in the heating zone 10, each heating element has a chamfer 13 at both ends.

[0061] By providing a chamfer at at least one end of each heating element, the area of ​​the heating element can be reduced, thereby increasing the resistance of the heating element. Consequently, when the heating element is energized, the heating efficiency per unit area of ​​the heating element can be increased.

[0062] Furthermore, chamfers can be provided at both ends of each heating element to further reduce the area of ​​the heating element and increase the unit heating efficiency of the heating element to a greater extent.

[0063] It is understood that, in order to adapt to the shape of the crucible in the hot zone of the single crystal furnace, the heater provided in this embodiment of the invention needs to have a shape that matches the crucible. That is, in this embodiment of the invention, multiple heating zones and multiple slit zones are alternately connected to form a shape that matches the crucible in the hot zone of the single crystal furnace.

[0064] Reference Figure 1 or Figure 3 In order to adapt to the hot field of the single crystal furnace, the heater provided in this embodiment of the invention further includes at least two support members (not shown in the figure) and at least two support member connection structures 30. Each support member is connected to the corresponding support member connection structure 30 through a detachable connector.

[0065] It is understood that the aforementioned support members are used to support the heater so that the heater can be stably placed in the hot zone of the single crystal furnace. Each support member is connected to the corresponding support member connection structure via a detachable connector. Based on this, for hot zones of different heights, the support members can be disassembled and replaced without affecting other hot zone components, thereby further saving costs.

[0066] Each of the aforementioned support member connection structures is disposed between the target heating zone of the heater and the slit area adjacent to the target heating zone, wherein the target heating zone is any one of the plurality of heating zones. The specific location of the support member connection structure within the heater is not specifically limited in this embodiment of the invention.

[0067] Specifically, when the heater includes two supporting connection structures, the two supporting connection structures are located symmetrically on the heater to achieve stable support for the heater. It can be understood that when the heater includes multiple supporting connection structures, these multiple supporting connection structures are evenly arranged at corresponding positions on the heater along its circumference.

[0068] Furthermore, refer to Figure 5 and Figure 6 Each support member connection structure 30 includes a connection area 301 and a connection opening area 302.

[0069] Reference Figure 5 or Figure 6 The width d of the connecting opening area 302 is greater than or equal to the width b of the connecting area 301.

[0070] The width of the connecting opening area is defined as the dimension of the connecting opening area in the same direction as the arrangement direction of the multiple heating zones and the multiple slit areas. Specifically, refer to... Figure 1 The width direction of the connecting opening area 302 is the same as the arrangement direction of the multiple heating areas and the multiple slit areas. The width direction of the connecting opening area 302 is E, and the width of the connecting opening area is the dimension of the connecting opening area along the direction E.

[0071] The width of the connecting area is defined as the dimension of the connecting area in the same direction as the arrangement of the multiple heating zones and multiple slit zones. Specifically, refer to... Figure 1The width direction of the connecting area 301 is the same as the arrangement direction of the multiple heating areas and the multiple slit areas. The width direction of the connecting area 301 is E, and the width of the connecting area is the dimension of the connecting area along the direction E.

[0072] The connection opening areas 302 of the at least two support member connection structures 30 included in each heater have the same opening direction.

[0073] In one possible implementation, refer to Figure 5 The connecting opening area 302 and the connecting area 301 are arranged along the arrangement direction of the multiple heating areas and the multiple slit areas; the opening depth c1 of the connecting opening area 302 is greater than or equal to the height a of the connecting area 301.

[0074] In another possible implementation, refer to Figure 6 The connecting opening area 302 and the connecting area 301 are arranged on the heater surface along a direction perpendicular to the arrangement of the multiple heating areas and the multiple slit areas. It can be seen that... Figure 6 The minimum depth of the connecting opening area 302 is c2. And the minimum opening depth c2 of the connecting opening area 302 is greater than or equal to the height a of the connecting area 301.

[0075] Among them, reference Figure 1 The opening depth of the connecting opening area 302 is the size of the connecting opening area in the direction D perpendicular to the width direction E of the connecting opening area 302.

[0076] The height of the connection area 301 is the dimension of the connection area in the direction D perpendicular to the width direction E of the connection area 301.

[0077] Based on the above description, since the connection opening areas of at least two support member connection structures have the same opening direction, and the width of the connection opening area is greater than or equal to the width of the connection area, and the opening depth of the connection opening area is greater than or equal to the height of the connection area, the support member connection structure in the embodiment of the present invention can be adapted to the structure of the heater of the present invention, so that the heating area of ​​one heater in two identical heaters can be nested into the slit area of ​​the other heater. Thus, when manufacturing the heater, a complete blank can be processed into two identical heaters, thereby improving the heater output ratio and reducing the heater usage cost.

[0078] In a specific example, the processing method of the above-mentioned support connection structure can be as follows: Since the heating zone of the heater is annularly symmetrical, no gaps are made in any reserved heating zone, and no gaps are made in symmetrical positions; the support connection structure is set at half the height of the heater, and the support connection structure is connected to the support by carbon carbon bolts. The height of the support can be processed by other blanks according to different thermal field sizes, and other thermal field components are not affected. Therefore, costs can be further saved.

[0079] In practical applications, in order to meet resistance requirements and heater lifespan, the width of the heating zone is preferably 35mm-50mm, and the total height of the heater is preferably 240mm-280mm.

[0080] This invention also provides a single crystal furnace hot zone, including the heater described above.

[0081] The beneficial effects of the single crystal furnace hot field provided in this embodiment of the invention are the same as those of the heater described above, and will not be repeated here.

[0082] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.

[0083] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely exemplary descriptions of the invention as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications of the invention fall within the scope of the claims and their equivalents, the invention is also intended to include such modifications and modifications.

Claims

1. A heater characterized by, The heater is arranged at the outer periphery of a crucible in a hot zone of a single crystal furnace, and is used for heating at least a molten silicon surface in the crucible. The heater comprises a plurality of heating zones and a plurality of slit zones, each of the slit zones is connected between two adjacent heating zones; the openings of the plurality of slit zones have the same opening direction, and the width of the slit zone is greater than or equal to the width of the heating zone; the plurality of heating zones have the same size parameter; the opening depth of the slit zone matches the height of the at least one heating element in the heating zone. The slit zone comprises a second connecting element located on the side of the slit zone away from the opening of the slit zone, and used for connecting two adjacent heating zones. When the heating zone comprises a plurality of heating elements, the plurality of heating elements are arranged in parallel, and the plurality of heating elements are connected end to end through the corresponding first connecting element. After the plurality of heating zones and the plurality of slit zones are alternately connected, a shape matching the crucible in the hot zone of the single crystal furnace is enclosed.

2. The heater of claim 1, wherein The plurality of slit zones have the same size parameter.

3. The heater of claim 1, wherein, Each of the heating zones comprises at least one heating element; wherein the height of the heating element is the size of the heating element in the direction perpendicular to the arrangement direction of the plurality of heating zones and the plurality of slit zones.

4. The heater of claim 3, wherein, At least one end of each of the heating elements is provided with a chamfer.

5. The heater according to any one of claims 1 to 4, wherein The heater further comprises at least two support elements and at least two support element connecting structures; each of the support elements is connected with the corresponding support element connecting structure through a detachable connecting element. Each of the support element connecting structures is arranged between a target heating zone and a slit zone adjacent to the target heating zone of the heater, wherein the target heating zone is one of the plurality of heating zones.

6. The heater of claim 5, wherein, When the heater comprises two support element connecting structures, the two support element connecting structures are located at the symmetrical positions of the heater. Or, when the number of support element connecting structures included in the heater is greater than two, the plurality of support element connecting structures are uniformly arranged at the corresponding positions of the heater.

7. The heater of claim 5, wherein, Each of the support element connecting structures comprises a connecting zone and a connecting opening zone connected thereto. The width of the connecting opening zone is greater than or equal to the width of the connecting zone.

8. The heater of claim 7, wherein, The connecting opening zones of the at least two support element connecting structures have the same opening direction.

9. The heater of claim 7, wherein, The connecting opening zone and the connecting zone are arranged along the arrangement direction of the plurality of heating zones and the plurality of slit zones; the opening depth of the connecting opening zone is greater than or equal to the height of the connecting zone. Or, the connecting opening zone and the connecting zone are arranged on the surface of the heater along the direction perpendicular to the arrangement direction of the plurality of heating zones and the plurality of slit zones, and the minimum opening depth of the connecting opening zone is greater than or equal to the height of the connecting zone.

10. A heat field of a single crystal furnace, characterized by comprising: The heater comprises any one of claims 1-9.

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