A method for preparing silicon carbide power devices based on diamond heat dissipation

Abstract

The present invention provides a method for preparing a silicon carbide power device based on diamond heat dissipation, which is carried out according to the following steps: step 1, embedding a pin into the interior of a substrate; step 2, applying thermal grease to the interior of the substrate, and the top of the pin is also in contact with the diamond heat-conducting component through the grease; step 3, sequentially installing a bottom diamond heat sink, a middle diamond heat sink, and a top diamond heat sink; step 4, injecting an adhesive into the side of the top diamond heat sink. The preparation method adopts a three-layer diamond heat-conducting component, thereby further improving the efficiency of heat dissipation transferred from the power module to the diamond material. At the same time, it can also be connected to an external heat dissipation device in multiple ways, making the installation more flexible. By introducing the pin part upward and pressing it on the inner boss, the heat generated by each pin part can also be simultaneously discharged outward, thereby improving the heat dissipation effect of the pin part.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a method for preparing a silicon carbide power device based on diamond heat dissipation. Background Art

[0002] Silicon carbide power devices are key components of power electronic equipment, primarily responsible for power processing. They are capable of handling high voltages and large currents, and can also achieve functions including frequency conversion, voltage conversion, current conversion, and power management. Silicon carbide power devices require a heat dissipation structure on their surface to promptly dissipate the heat generated internally during operation, ensuring they can operate in a low-temperature, high-efficiency environment. Existing technologies use conventional metal heat dissipation structures to dissipate heat from silicon carbide power devices, but this method has low heat dissipation efficiency and a large thermal resistance on the surface of the silicon carbide power device, making it difficult to quickly achieve heat dissipation in extremely high-temperature environments, limiting the extreme environmental range in which the power device can operate normally. Summary of the Invention

[0003] In view of the shortcomings of the existing technology, the purpose of the present invention is to provide a method for preparing a silicon carbide power device based on diamond heat dissipation to solve the problems raised in the above background technology. The present invention provides a new diamond heat dissipation solution with good heat dissipation effect and high stability.

[0004] To achieve the above objectives, the present invention is implemented through the following technical solutions: a method for preparing a silicon carbide power device based on diamond heat dissipation, which is carried out according to the following steps: step 1, embedding a pin into the interior of a substrate, wherein a plurality of pins are provided, and the top of each pin reserves a contact position with a diamond heat conductive component on the inner side of the substrate, wherein the diamond heat conductive component includes two top diamond heat sinks, a middle diamond heat sink, and two bottom diamond heat sinks, and a power module is installed on the inner bottom of the substrate;

[0005] Step 2: evenly apply thermal grease on the surface of the inner boss provided on the inner wall of the substrate and the contact position reserved on the top of the pin;

[0006] Step 3: Install the bottom diamond heat sink, the middle diamond heat sink, and the top diamond heat sink in sequence, wherein the bottom diamond heat sink is pressed on the silicone grease to form a close contact thermal interface, the middle diamond heat sink is fixed to the inner boss by a support rod, and the top diamond heat sink is fixed by an adhesive mechanism, which is provided on the inner side and end of the bracket on the top of the substrate;

[0007] Step 4: Inject adhesive into the side of the top diamond heat sink through the injection port of the adhesive mechanism, and fix the top diamond heat sink with the adhesive. A first clamping groove is provided between the two top diamond heat sinks, and a second clamping groove is provided between the two bottom diamond heat sinks. The bottom end and the top end of the middle diamond heat sink are clamped and fixed by the second clamping groove and the first clamping groove respectively.

[0008] Furthermore, after applying the silicone grease in step 2, a scraping device is used to remove the silicone grease overflowing from the edge of the bottom diamond heat sink to ensure that the thickness of the thermal conductive layer is uniform.

[0009] Furthermore, heat dissipation holes are provided on the side of the bracket.

[0010] Furthermore, the bonding mechanism includes an injection port and an injection tube, a clamping rod is provided on the top of the bracket, the injection port is provided at one end of the clamping rod, and a sliding groove is provided on the inner side of the clamping rod.

[0011] Furthermore, the injection tube is embedded in the inside of the clamping rod, and a plurality of bonding holes are opened on the side of the injection tube. The side of the top diamond heat sink is inserted into the inside of the slide groove and the top diamond heat sink is fixed by injecting adhesive from the injection port.

[0012] Furthermore, a tinned copper sheet is provided at the bottom end of the pin, a welding hole is opened on the surface of the tinned copper sheet, the rear end of the tinned copper sheet is connected to the lead-in conductor, and a bonding sheet is provided on the top of the lead-in conductor.

[0013] Furthermore, a slot is provided on the surface of the inner boss, and each bonding sheet is embedded in the slot. The top of the bonding sheet contacts the bottom diamond heat sink, and the tops of the bonding sheet and the inner boss are coated with silicone grease.

[0014] Beneficial effects of the present invention: A method for preparing a silicon carbide power device based on diamond heat dissipation of the present invention includes a preparation method body, and the preparation method body includes a substrate, pins, a bracket, a heat dissipation hole, a diamond heat-conducting component, a bonding mechanism, a support rod, a power module, an inner boss, a clamping rod, a top diamond heat sink, a first clamping groove, a middle diamond heat sink, a bottom diamond heat sink, a second clamping groove, silicone grease, a card slot, a tinned copper sheet, a welding hole, an introduction conductor, a bonding sheet, an injection port, a slide groove, an injection tube, and a bonding hole.

[0015] 1. This method for preparing silicon carbide power devices based on diamond heat dissipation applies silicone grease on the top of the substrate and directly attaches the diamond thermal conductive component to the top of the centralized procurement through the silicone grease. The heat generated by the internal power module can be discharged outward along the diamond thermal conductive component, resulting in a larger heat conduction area and higher fit. The preparation process is fast and accurate, and is suitable for mass production.

[0016] 2. This diamond-based heat dissipation method for silicon carbide power devices uses a three-layer diamond thermal conductive component, which further improves the efficiency of heat transfer to the diamond material. It can also be connected to external heat dissipation equipment in a variety of ways, making installation more flexible.

[0017] 3. The method for preparing silicon carbide power devices based on diamond heat dissipation introduces the pin part upward, presses it on the inner boss, installs the bottom diamond heat sink, and supports the installation through the inner boss while also being able to simultaneously conduct the heat generated by each pin part to the outside, thereby improving the heat dissipation effect of the pin part. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a flow chart of a method for preparing a silicon carbide power device based on diamond heat dissipation according to the present invention;

[0019] Figure 2 This is an appearance diagram of a product of a method for preparing a silicon carbide power device based on diamond heat dissipation according to the present invention;

[0020] Figure 3 This is a disassembled diagram of a method for preparing a silicon carbide power device based on diamond heat dissipation according to the present invention;

[0021] Figure 4 This is a structural schematic diagram of the pin portion of a method for preparing a silicon carbide power device based on diamond heat dissipation according to the present invention;

[0022] Figure 5 This is a structural schematic diagram of the bonding mechanism portion of a method for preparing a silicon carbide power device based on diamond heat dissipation according to the present invention;

[0023] In the figure: 1. Base material; 2. Pins; 3. Bracket; 4. Heat dissipation hole; 5. Diamond thermal conductive component; 6. Bonding mechanism; 7. Support rod; 8. Power module; 9. Inner boss; 10. Clamping rod; 11. Top diamond heat sink; 12. First clamping groove; 13. Middle diamond heat sink; 14. Bottom diamond heat sink; 15. Second clamping groove; 16. Silicone grease; 17. Card slot; 18. Tinned copper sheet; 19. Welding hole; 20. Lead-in conductor; 21. Bonding sheet; 22. Injection port; 23. Slide groove; 24. Injection tube; 25. Bonding hole. DETAILED DESCRIPTION

[0024] In order to make the technical means, creative features, objectives and effects achieved by the present invention easier to understand, the present invention is further described below in conjunction with specific implementation methods.

[0025] See also Figures 1 to 5The present invention provides a technical solution: a method for preparing a silicon carbide power device based on diamond heat dissipation, which is carried out according to the following steps: step 1, embedding a pin 2 into the interior of a substrate 1, wherein a plurality of pins 2 are provided, and the top of each pin 2 is in contact with the diamond heat-conducting component 5 on the top inside the substrate 1; step 2, applying thermal grease 16 to the interior of the substrate 1, and the top of the pin 2 is also in contact with the diamond heat-conducting component 5 through the grease 16; step 3, sequentially installing a bottom diamond heat sink 14, a middle diamond heat sink 13 and a top diamond heat sink 11; step 4, injecting an adhesive into the side of the top diamond heat sink 11, and bonding the top diamond heat sink 11 to the top diamond heat sink 11 through the adhesive. The heat sheet 11 is fixed. In step 2, during the silicone grease 16 coating process, the silicone grease 16 needs to be attached to the side wall inside the substrate 1, and after the bottom diamond heat sink 14 is pressed on the top of the silicone grease 16, the silicone grease 16 overflowing from the edge of the bottom diamond heat sink 14 is removed by an external scraping device. The preparation method of silicon carbide power device based on diamond heat dissipation is achieved by coating silicone grease 16 on the top of the substrate 1 and directly attaching the diamond thermal conductive component 5 to the top of the centralized procurement through the silicone grease 16. The heat generated by the internal power module 8 can be conducted outward along the diamond thermal conductive component 5, the heat conduction area is larger, and the fit is higher. The preparation process is fast and accurate, and it is suitable for mass production.

[0026] In this embodiment, a bracket 3 is installed on the top of the substrate 1, and an adhesive mechanism 6 is provided on the inner side and end of the bracket 3. An inner boss 9 is installed on the inner wall of the substrate 1, and the diamond thermal conductive component 5 is placed on the surface of the inner boss 9. The side of the bracket 3 is provided with a heat dissipation hole 4, and the pin 2 is inserted inward from the side of the substrate 1. When the silicon carbide power device manufactured by this preparation method is welded inside an electronic device, the welding is completed directly by contacting the bottom of each pin 2 with the solder point on the circuit board, and the diamond thermal conductive component 5 on the top dissipates heat by air cooling or direct contact.

[0027] In this embodiment, the diamond heat conducting component 5 includes two top diamond heat sinks 11, a middle diamond heat sink 13 and two bottom diamond heat sinks 14. The top diamond heat sink 11 is fixed by a side bonding mechanism 6. A first clamping groove 12 is provided between the two top diamond heat sinks 11, and a second clamping groove 15 is provided between the two bottom diamond heat sinks 14. A power module 8 is installed at the bottom inner side of the substrate 1, a support rod 7 is installed in the middle of the inner boss 9, and a middle diamond heat sink 13 is installed on the top of the support rod 7. The bottom end and the top end of the middle diamond heat sink 13 are clamped and fixed by the second clamping groove 15 and the first clamping groove 12 respectively. The three-layer diamond heat conducting component 5 is used. The thermal component 5 is provided with a heat dissipation hole 4 between the top diamond heat sink 11 and the bottom diamond heat sink 14, thereby further improving the efficiency of heat extraction transferred to the diamond material. At the same time, it can also be connected to external heat dissipation equipment in a variety of ways, and the installation is more flexible. Specifically, in this structure, the bottom diamond heat sink 14 can absorb the heat generated by the power module 8 by directly contacting the substrate 1 or the top of the internal power module 8 chip, and discharge the heat outward through the heat dissipation hole 4 on the top. At the same time, part of the heat is transferred upward through the middle diamond heat sink 13 in the middle and transferred to the top diamond heat sink 11, and the heat conduction effect is simultaneously achieved with the help of the top diamond heat sink 11.

[0028] In this embodiment, the bonding mechanism 6 includes an injection port 22 and an injection tube 24. A clamping rod 10 is provided at the top of the bracket 3. The injection port 22 is provided at one end of the clamping rod 10. A slide groove 23 is provided on the inner side of the clamping rod 10. The injection tube 24 is embedded in the inside of the clamping rod 10. A plurality of bonding holes 25 are provided on the side of the injection tube 24. The side of the top diamond heat sink 11 is inserted into the interior of the slide groove 23 and the top diamond heat sink 11 is fixed by injecting adhesive from the injection port 22. After the top diamond heat sink 11 is inserted into the interior of the slide groove 23, the adhesive is injected into the inner side of the clamping rod 10 through the injection port 22, flows along the injection tube 24, and flows out from each bonding hole 25. The outer end of the bonding hole 25 is connected to the side of the top diamond heat sink 11, so that the adhesive is evenly distributed on the side of the top diamond heat sink 11, thereby achieving a fixing effect on this part of the diamond.

[0029] In this embodiment, a tinned copper sheet 18 is provided at the bottom end of the pin 2, a welding hole 19 is provided on the surface of the tinned copper sheet 18, the rear end of the tinned copper sheet 18 is connected to the lead-in conductor 20, a bonding sheet 21 is provided on the top of the lead-in conductor 20, a card slot 17 is provided on the surface of the inner boss 9, each of the bonding sheets 21 is embedded in the inside of the card slot 17, the top of the bonding sheet 21 is in contact with the bottom diamond heat sink 14, and the bonding sheet 21 and the top of the inner boss 9 are coated with silicone grease 16. By partially introducing the pin 2 upward and pressing it on the inner boss 9, the bottom After the diamond heat sink 14 is installed, it is supported and installed by the inner boss 9, and at the same time, the heat generated by each pin 2 can be discharged outward at the same time, thereby improving the heat dissipation effect of the pin 2 part, and the insulation property of the diamond will not affect the transmission of current. After the pin 2 is soldered to the circuit board, the current flows from the pin 2, which can generate heat on the pin 2. Through the top bonding sheet 21 directly contacting the bottom diamond heat sink 14, the heat generated on the pin 2 can be directly conducted by skipping the substrate 1 part, thereby realizing the efficient heat dissipation function of the pin 2 part.

[0030] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, from all perspectives, the embodiments should be regarded as illustrative and non-restrictive. The scope of the present invention is defined by the appended claims, not the foregoing description, and it is intended that all variations that come within the meaning and range of equivalents of the claims be included within the present invention. Any reference signs in the claims should not be construed as limiting the claim to which they relate.

[0031] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

Claims

1. A method for preparing a silicon carbide power device based on diamond heat dissipation, characterized in that: The process is carried out according to the following steps: Step 1: embedding a pin (2) into the interior of a substrate (1); a plurality of pins (2) are provided, and the top end of each pin (2) is reserved on the inner side of the substrate (1) for contact with a diamond heat conducting component (5); the diamond heat conducting component (5) includes two top diamond heat sinks (11), one middle diamond heat sink (13) and two bottom diamond heat sinks (14); a power module (8) is installed on the inner bottom of the substrate (1); Step 2: evenly apply thermal conductive silicone grease (16) on the surface of the inner boss (9) provided on the inner wall of the substrate (1) and the reserved contact position on the top of the pin (2); Step 3: sequentially install a bottom diamond heat sink (14), a middle diamond heat sink (13), and a top diamond heat sink (11), wherein the bottom diamond heat sink (14) is pressed on the silicone grease (16) to form a close contact heat conduction interface, the middle diamond heat sink (13) is fixed to the inner boss (9) via a support rod (7), and the top diamond heat sink (11) is fixed via a bonding mechanism (6), and the bonding mechanism (6) is provided on the inner side and end of the bracket (3) on the top of the substrate (1); Step 4: Inject adhesive into the side of the top diamond heat sink (11) through the injection port (22) of the adhesive mechanism (6), and fix the top diamond heat sink (11) with the adhesive. A first clamping groove (12) is provided between the two top diamond heat sinks (11), and a second clamping groove (15) is provided between the two bottom diamond heat sinks (14). The bottom end and the top end of the middle diamond heat sink (13) are clamped and fixed by the second clamping groove (15) and the first clamping groove (12), respectively.

2. The method for preparing a silicon carbide power device based on diamond heat dissipation according to claim 1, characterized in that: After the silicone grease (16) is applied in step 2, a scraping device is used to remove the silicone grease (16) overflowing from the edge of the bottom diamond heat sink (14) to ensure that the thickness of the heat conducting layer is uniform.

3. The method for preparing a silicon carbide power device based on diamond heat dissipation according to claim 1, characterized in that: A heat dissipation hole (4) is provided on the side of the bracket (3).

4. The method for preparing a silicon carbide power device based on diamond heat dissipation according to claim 3, characterized in that: The bonding mechanism (6) includes an injection port (22) and an injection tube (24). A clamping rod (10) is provided on the top of the bracket (3). The injection port (22) is provided at one end of the clamping rod (10). A sliding groove (23) is provided on the inner side of the clamping rod (10).

5. The method for preparing a silicon carbide power device based on diamond heat dissipation according to claim 4, characterized in that: The injection tube (24) is embedded in the interior of the clamping rod (10), and a plurality of bonding holes (25) are opened on the side of the injection tube (24). The side of the top diamond heat sink (11) is inserted into the interior of the slide groove (23) and the top diamond heat sink (11) is fixed by injecting adhesive from the injection port (22).

6. The method for preparing a silicon carbide power device based on diamond heat dissipation according to claim 3, characterized in that: A tinned copper sheet (18) is provided at the bottom end of the pin (2), a welding hole (19) is provided on the surface of the tinned copper sheet (18), a rear end of the tinned copper sheet (18) is connected to an introduction conductor (20), and a bonding sheet (21) is provided on the top of the introduction conductor (20).

7. The method for preparing a silicon carbide power device based on diamond heat dissipation according to claim 6, characterized in that: A slot (17) is provided on the surface of the inner boss (9), and each of the bonding sheets (21) is embedded in the slot (17). The top of the bonding sheet (21) is in contact with the bottom diamond heat sink (14), and the tops of the bonding sheet (21) and the inner boss (9) are coated with silicone grease (16).

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