Photoresist organic stripping solution, preparation method and application thereof

Abstract

The present application relates to photoresist stripping liquid technical field, especially to a kind of photoresist organic stripping liquid and its preparation method and application.The present application provides a kind of photoresist organic stripping liquid, according to mass fraction, including organic amine 10~30 parts, ether / alcohol organic solvent 70~90 parts and additive 1~5 parts;The additive includes 1-(2-hydroxyethyl) piperazine, N-(2-hydroxyethyl) ethylenediamine, methyl benzene propyl triazoles, imino dipropylamine, 2,4-dihydroxy pyrimidine, succinic acid, N-ethyl pyrrolidone, 1-methyl-5-nitroimidazole, thiourea, 4-hydroxy butyric acid lactone, citric acid, glucose, gluconic acid and malic acid one or several kinds.The photoresist organic stripping liquid has higher stripping efficiency and stripping effect, energy saving and environmental protection, while avoiding strong corrosive substance.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photoresist stripping liquid, in particular to a photoresist organic stripping liquid, a preparation method and application thereof. BACKGROUND

[0002] In the modern field of electronic fine processing, integrated circuits (IC), large-scale integrated circuits (LSI), ultra-large-scale integrated circuits (ULSI) and light-emitting diode (LED) chips and other semiconductor elements or liquid crystal panel elements have a large number of extremely fine circuits and circuit structures, and in order to form these structures, photoresist is needed to be used for processing, and the photoresist process usually needs to be carried out for dozens of times. The conventional processing method is to form a specific functional film on a substrate or a wafer by various treatments such as electroplating, chemical vapor deposition and the like, then uniformly coat photoresist, then form the required circuit pattern through exposure and development, and finally etch the functional film to form fine circuits or circuits. The residual photoresist layer needs to be stripped.

[0003] In the chip manufacturing process, cleaning the photoresist, metal particles and other contaminants on the chip surface is the main purpose of stripping, and stripping is a key process in chip manufacturing. Incomplete stripping may result in the scrapping of the entire batch of chips. Therefore, the state of the chip surface and the degree of removal of contaminants are one of the most important factors affecting the yield of chips and the quality and reliability of devices.

[0004] In the research of photoresist glass cleaning, dry stripping or wet stripping has been used for a long time, but dry processing has many defects such as easy residue, etc. Therefore, wet stripping is mainly used at present. The principle of wet stripping is to use a stripping liquid to dissolve the residual photoresist, so that it can be smoothly removed. Through years of in-depth research, a variety of stripping liquids have been prepared, each with its own advantages and application range. For example, a photoresist stripping liquid disclosed in Chinese Patent No. CN101295144A includes a surfactant, an organic amine, an organic solvent, a chelating agent, a corrosion inhibitor and pure water, and the stripping liquid has good cleaning effect. A photoresist stripping liquid disclosed in Chinese Patent No. CN1244023C contains HF acid and a salt formed by a specific amount of alkali without metal ions, a water-soluble organic solvent, an anti-corrosion agent and the balance of water, and the stripping liquid has good stripping property. As described above, although there are various photoresist stripping liquids in the prior art, the stripping mechanism of these stripping liquids is based on the single action of dissolution to achieve the removal of photoresist, which leads to various defects such as corrosion of metal wiring or substrate material to some extent, incomplete stripping of photoresist, etc., and the presence of strong corrosive substances (such as HF) in them, which leads to a large amount of three wastes, high processing cost, environmental pollution, and difficulty in recycling and reuse.

[0005] Therefore, under the industry demand for developing new photoresist stripping solutions, further developing more efficient and environmentally friendly photoresist stripping solutions is currently in urgent need. New photoresist stripping solutions will definitely be of great significance to the development of the integrated circuit, LED and liquid crystal panel industries. Summary of the Invention

[0006] The purpose of the present invention is to provide a photoresist organic stripping solution and a preparation method and application thereof. The photoresist organic stripping solution has high stripping efficiency and stripping effect, is energy-saving and environmentally friendly, and avoids highly corrosive substances.

[0007] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0008] The present invention provides a photoresist organic stripping solution, which comprises, by weight, 10 to 30 parts of an organic amine, 70 to 90 parts of an ether / alcohol organic solvent, and 1 to 5 parts of an additive;

[0009] The additives include one or more of 1-(2-hydroxyethyl)piperazine, N-(2-hydroxyethyl)ethylenediamine, methylphenyltriazole, iminodipropylamine, 2,4-dihydroxypyrimidine, succinic acid, N-ethylpyrrolidone, 1-methyl-5-nitroimidazole, thiourea, 4-hydroxybutyric acid lactone, citric acid, glucose, gluconic acid and malic acid.

[0010] Preferably, the organic amine includes one or more of diglycolamine, N,N-diethylethanolamine, N-methylformamide, N-methylacetamide, ethylenediamine, N,N-dimethylacetamide, N,N-dimethylpropionamide, 3-propanolamine, dimethylformamide, dimethylacetamide, hydroxyethylethylenediamine and ethanolamine.

[0011] Preferably, the ether / alcohol organic solvent includes one or more of butanol, 2-butanol, glycerol, 2-methylaminoethanol, triethylaminoethanol, 4-methyl-2-pentanol, diethylaminoethanol, diethylene glycol methyl ether, dipropylene glycol dimethyl ether, propylene glycol methyl ether, diethylene glycol butyl ether, ethylene glycol butyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, dipropylene glycol butyl ether, dipropylene glycol propyl ether and n-butyl ether.

[0012] The present invention also provides a method for preparing the photoresist organic stripping solution described in the above technical solution, comprising the following steps:

[0013] The organic amine, ether / alcohol organic solvent and additives are mixed to obtain the photoresist organic stripping solution.

[0014] Preferably, the mixing temperature is room temperature and the mixing time is 8 to 12 hours.

[0015] The application further provides application of the photoresist organic stripping solution in preparation of a liquid crystal panel.

[0016] The application provides a photoresist organic stripping solution, which comprises 10-30 parts of an organic amine, 70-90 parts of an ether / alcohol organic solvent and 1-5 parts of an additive according to mass fraction; the additive comprises one or more of 1-(2-hydroxyethyl)piperazine, N-(2-hydroxyethyl)ethylenediamine, methylphenyltriazole, iminodipropylamine, 2,4-dihydroxypyrimidine, succinic acid, N-ethylpyrrolidone, 1-methyl-5-nitroimidazole, thiourea, 4-hydroxybutyric acid lactone, citric acid, glucose, gluconic acid and malic acid.

[0017] Compared with the prior art, the technical solution has the following beneficial effects:

[0018] 1) The photoresist organic stripping solution itself does not contain water, can realize recycling of the liquid medicine, greatly reduces generation of three wastes, and realizes energy saving and environmental protection;

[0019] 2) The ether / alcohol organic solvent is used as a dispersion medium to realize a photoresist stripping process combining stripping and dissolving, improve stripping efficiency and glass effect, shorten stripping time, and achieve good stripping effect without photoresist residue on the substrate;

[0020] 3) The photoresist organic stripping solution is alkaline, avoids strong corrosive substances (such as HF), and does not corrode the substrate circuit, thereby preventing Javon effect in two-layer or three-layer metal wiring;

[0021] 4) Different additives in different solutions have different groups, carbon chain lengths and structures, and different properties, for example, some corrosion inhibitors can have good corrosion inhibition effect under the condition of pH=10-12, but have no effect or poor effect under other pH conditions; therefore, the application of the above types of additives and other components (organic amine and ether / alcohol organic solvent) further improves the stripping effect of the photoresist organic stripping solution. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 An OM image of an experimental substrate after etching by the photoresist organic stripping solution in Example 1;

[0023] Figure 2 An OM image of an experimental substrate after etching by the photoresist organic stripping solution in Example 2;

[0024] Figure 3 An OM image of an experimental substrate after etching by the photoresist organic stripping solution in Example 3;

[0025] Figure 4 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 4;

[0026] Figure 5 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 5;

[0027] Figure 6 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 6;

[0028] Figure 7 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 7;

[0029] Figure 8 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 8;

[0030] Figure 9 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 9;

[0031] Figure 10 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 10;

[0032] Figure 11 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 11;

[0033] Figure 12 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 12;

[0034] Figure 13 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 13;

[0035] Figure 14 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 14;

[0036] Figure 15 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 15;

[0037] Figure 16 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 16;

[0038] Figure 17 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 17;

[0039] Figure 18 OM photograph of the experimental substrate after etching with the photoresist organic stripping solution described in Example 18;

[0040] Figure 19 OM image of the experimental substrate after etching by the photoresist organic stripping solution described in Example 19;

[0041] Figure 20 OM image of the experimental substrate after etching by the photoresist organic stripping solution described in Example 20;

[0042] Figure 21 OM image of the experimental substrate after etching by the photoresist organic stripping solution described in Example 21;

[0043] Figure 22 OM image of the experimental substrate after etching by the photoresist organic stripping solution described in Comparative Example 1;

[0044] Figure 23 OM image of the experimental substrate after etching by the photoresist organic stripping solution described in Comparative Example 2. DETAILED DESCRIPTION

[0045] The present application provides a photoresist organic stripping solution, comprising 10-30 parts by mass of an organic amine, 70-90 parts by mass of an ether / alcohol organic solvent and 1-5 parts by mass of an additive.

[0046] The additive comprises one or more of 1-(2-hydroxyethyl)piperazine, N-(2-hydroxyethyl)ethylenediamine, methylphenyltriazole, iminodipropylamine, 2,4-dihydroxypyrimidine, succinic acid, N-ethylpyrrolidone, 1-methyl-5-nitroimidazole, thiourea, 4-hydroxybutyric acid lactone, citric acid, glucose, gluconic acid and malic acid.

[0047] In the present application, all the raw materials for preparation are commercially available products well known to those skilled in the art, unless otherwise specified.

[0048] The photoresist organic stripping solution according to the present application comprises 10-30 parts of organic amine, preferably 15-25 parts, and more preferably 18-22 parts. In the present application, the organic amine preferably comprises one or more of diglycol amine, N,N-diethylethanolamine, N-methylformamide, N-methylacetamide, ethylenediamine, N,N-dimethylacetamide, N,N-dimethylpropionamide, 3-propanolamine, dimethylformamide, dimethylacetamide, hydroxyethylethylenediamine and ethanolamine; more preferably comprises N,N-diethylethanolamine, N-methylformamide and N-methylacetamide in a mass ratio of 10:5:5, or N,N-diethylethanolamine and ethanolamine in a mass ratio of 15:15, or dimethylformamide and ethanolamine in a mass ratio of 20:5, or 3-propanolamine and N-methylformamide in a mass ratio of 15:5, or 3-propanolamine, or ethylenediamine and dimethylacetamide in a mass ratio of 10:10, or N,N-diethylethanolamine, or N-methylformamide, N,N-dimethylpropionamide and ethanolamine in a mass ratio of 15:5:5, or N-methylacetamide, or dimethylformamide and dimethylacetamide in a mass ratio of 10:10, or N,N-dimethylacetamide and N-methylformamide in a mass ratio of 10:10, or N,N-dimethylformamide, or N,N-dimethylpropionamide and N,N-dimethylacetamide in a mass ratio of 20:10, or N,N-dimethylpropionamide and N-methylpropionamide in a mass ratio of 10:5, or N-methylpropionamide, 3-propanolamine and ethanolamine in a mass ratio of 10:10:5, or N,N-dimethylpropionamide and 3-propanolamine in a mass ratio of 10:5, or N,N-dimethylpropionamide and N-methylacetamide in a mass ratio of 10:10, or N,N-dimethylpropionamide and N-methylformamide in a mass ratio of 10:10, or N-methylacetamide and ethylenediamine in a mass ratio of 10:5, or N-methylformamide.

[0049] Based on the mass fraction of the organic amine, the photoresist organic stripping solution of the present invention comprises 70 to 90 parts of an ether / alcohol organic solvent, preferably 75 to 85 parts, and more preferably 78 to 82 parts. In the present invention, the ether / alcohol organic solvent preferably comprises one or more of butanol, 2-butanol, glycerol, 2-methylaminoethanol, triethylaminoethanol, 4-methyl-2-pentanol, diethylaminoethanol, diethylene glycol methyl ether, dipropylene glycol dimethyl ether, propylene glycol methyl ether, diethylene glycol butyl ether, ethylene glycol butyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, dipropylene glycol butyl ether, dipropylene glycol propyl ether, and n-butyl ether; more preferably, it comprises n-butanol, triethylaminoethanol, diethylene glycol methyl ether, propylene glycol ethyl ether, and diethylene glycol butyl ether in a mass ratio of 15:15:20:10:15, or diethylene glycol in a mass ratio of 30:15:10:12. Methyl ether, dipropylene glycol butyl ether, glycerol and diethylaminoethanol, or triethylaminoethanol, diethylene glycol methyl ether, n-butyl ether and propylene glycol methyl ether in a mass ratio of 20:10:20:22, or diethylene glycol methyl ether, propylene glycol ethyl ether, 2-methylaminoethanol and 4-methyl-2-pentanol in a mass ratio of 28:20:20:10, or n-butyl ether and dipropylene glycol dimethyl ether in a mass ratio of 35:42, or n-butanol, diethylene glycol methyl ether and propylene glycol methyl ether in a mass ratio of 40:20:18, or dipropylene glycol dimethyl ether, 2-butanol and diethylene glycol butyl ether in a mass ratio of 25:22:30, or Dipropylene glycol dimethyl ether, 2-butanol and diethylene glycol butyl ether in a mass ratio of 55:8:10, or diethylene glycol methyl ether, 2-methylaminoethanol and diethylene glycol butyl ether in a mass ratio of 40:35, or 4-methyl-2-pentanol, diethylene glycol methyl ether and ethylene glycol butyl ether in a mass ratio of 20:20:37, or diethylene glycol methyl ether and glycerol in a mass ratio of 50:26, or diethylene glycol methyl ether and propylene glycol methyl ether in a mass ratio of 40:38, or diethylene glycol methyl ether, dipropylene glycol propyl ether and n-butanol in a mass ratio of 30:20:18, or diethylene glycol in a mass ratio of 20:40:22 Methyl ether, triethylaminoethanol and glycerol, or diethylene glycol methyl ether, triethylaminoethanol and n-butyl ether in a mass ratio of 50:20:8, or triethylaminoethanol, glycerol and n-butyl ether in a mass ratio of 40:20:16, or triethylaminoethanol, propylene glycol methyl ether and n-butyl ether in a mass ratio of 40:20:15, or diethylene glycol methyl ether, propylene glycol methyl ether and n-butyl ether in a mass ratio of 50:10:18, or diethylene glycol butyl ether, glycerol, 2-methylaminoethanol and propylene glycol methyl ether in a mass ratio of 20:20:20:22, or diethylene glycol methyl ether, diethylene glycol butyl ether and triethylaminoethanol in a mass ratio of 60:10:8,

[0050] The photoresist organic stripping solution of the present application comprises 1-5 parts of additive, preferably 2-4 parts, more preferably 2.5-3.5 parts, based on the mass fraction of the organic amine. In the present application, the additive comprises a surfactant and / or a corrosion inhibitor; the corrosion inhibitor preferably comprises one or more of 1-(2-hydroxyethyl) piperazine, methyl benzene propyl triazole, 1-methyl-5-nitroimidazole, 2,4-dihydroxy pyrimidine, thiourea and imido dipropylamine; the surfactant preferably comprises one or more of N-(2-hydroxyethyl) ethylenediamine, succinic acid, N-ethyl pyrrolidone, 4-hydroxybutyric acid lactone, citric acid, glucose, gluconic acid and malic acid; the additive more preferably comprises 4-hydroxybutyric acid lactone, thiourea and citric acid in a mass ratio of 1:2:2; or 1-(2-hydroxyethyl) piperazine and methyl benzene propyl triazole in a mass ratio of 1:2; or 1-methyl-5-nitroimidazole and methyl benzene propyl triazole in a mass ratio of 2:1; or imido dipropylamine and 4-hydroxybutyric acid lactone in a mass ratio of 1:1; or thiourea, succinic acid and 4-hydroxybutyric acid lactone in a mass ratio of 1:1:1; or glucose and N-(2-hydroxyethyl) ethylenediamine in a mass ratio of 1:1; or N-(2-hydroxyethyl) ethylenediamine and 1-(2-hydroxyethyl) piperazine in a mass ratio of 1:2; or N-(2-hydroxyethyl) ethylenediamine, methyl benzene propyl triazole and 1-(2-hydroxyethyl) piperazine in a mass ratio of 1:0.5:0.5; or methyl benzene propyl triazole, 1-(2-hydroxyethyl) piperazine and 1-methyl-5-nitroimidazole in a mass ratio of 1:0.5:2.5; or methyl benzene propyl triazole, N-(2-hydroxyethyl) ethylenediamine, N-ethyl pyrrolidone and 2,4-dihydroxy pyrimidine in a mass ratio of 1:1:0.5:0.5; or methyl benzene propyl triazole, N-(2-hydroxyethyl) ethylenediamine and 4-hydroxybutyric acid lactone in a mass ratio of 0.5:1.5:2; or methyl benzene propyl triazole and N-(2-hydroxyethyl) ethylenediamine in a mass ratio of 1:1; or 1-methyl-5-nitroimidazole, N-(2-hydroxyethyl) ethylenediamine and imido dipropylamine in a mass ratio of 0.5:0.5:1; or methyl benzene propyl triazole, 1-(2-hydroxyethyl) piperazine and malic acid in a mass ratio of 0.5:1:1.5; or imido dipropylamine and succinic acid in a mass ratio of 1:1; or 1-(2-hydroxyethyl) piperazine, citric acid and N-ethyl pyrrolidone in a mass ratio of 2:1:1; or N-(2-hydroxyethyl) ethylenediamine, succinic acid and N-ethyl pyrrolidone in a mass ratio of 2:1:2; or imido dipropylamine; or 1-(2-hydroxyethyl) piperazine, methyl benzene propyl triazole and N-ethyl pyrrolidone in a mass ratio of 1:1.5:0.5; or N-ethyl pyrrolidone, N-(2-hydroxyethyl) ethylenediamine and 1-(2-hydroxyethyl) piperazine in a mass ratio of 0.5:1:0.5; or N-(2-hydroxyethyl) ethylenediamine, methyl benzene propyl triazole, 1-(2-hydroxyethyl) piperazine and N-ethyl pyrrolidone in a mass ratio of 0.5:0.5:0.5:0.5.

[0051] The present invention also provides a method for preparing the photoresist organic stripping solution described in the above technical solution, comprising the following steps:

[0052] The organic amine, ether / alcohol organic solvent and additives are mixed to obtain the photoresist organic stripping solution.

[0053] In the present invention, the mixing temperature is preferably room temperature, and the mixing time is preferably 0.5 to 12 hours, more preferably 9 to 11 hours.

[0054] The present invention also provides the use of the organic photoresist stripping solution described in the above technical solution in a liquid crystal panel. The present invention does not have any special restrictions on the method of the application, and the method well known to those skilled in the art can be used.

[0055] The photoresist organic stripping solution provided by the present invention, its preparation method and application are described in detail below with reference to the embodiments, but they should not be construed as limiting the scope of protection of the present invention.

[0056] Example 1

[0057] The composition of the photoresist organic stripping solution is as follows: 10 parts by weight of N,N-diethylethanolamine, 5 parts by weight of N-methylformamide, 5 parts by weight of N-methylacetamide, 15 parts by weight of n-butanol, 15 parts by weight of triethylaminoethanol, 20 parts by weight of diethylene glycol methyl ether, 10 parts by weight of propylene glycol ethyl ether, 15 parts by weight of diethylene glycol butyl ether, 1 part by weight of 4-hydroxybutyrolactone, 2 parts by weight of thiourea and 2 parts by weight of citric acid;

[0058] The preparation method of a photoresist organic stripping solution comprises the following steps: adding N,N-diethylethanolamine, N-methylformamide, N-methylacetamide, n-butanol, triethylaminoethanol, diethylene glycol methyl ether, propylene glycol ethyl ether, diethylene glycol butyl ether, 4-hydroxybutyrolactone, thiourea and citric acid into a mixing tank, and circulating the mixture at room temperature for 0.5 h to obtain the photoresist organic stripping solution.

[0059] Example 2

[0060] The composition of the photoresist organic stripping solution is as follows: 15 parts by weight of N,N-diethylethanolamine, 15 parts by weight of ethanolamine, 30 parts by weight of diethylene glycol methyl ether, 15 parts by weight of dipropylene glycol butyl ether, 10 parts by weight of glycerol, 12 parts by weight of diethylaminoethanol, 1 part by weight of 1(2-hydroxyethyl)piperazine, and 2 parts by weight of methylphenyltriazole;

[0061] The preparation method is as in Example 1.

[0062] Example 3

[0063] The composition of the photoresist organic stripping solution: 20 parts by weight of dimethylformamide, 5 parts by weight of ethanolamine, 20 parts by weight of triethylaminoethanol, 10 parts by weight of diethylene glycol methyl ether, 20 parts by weight of n-butyl ether, 22 parts by weight of propylene glycol methyl ether, 2 parts by weight of 1-methyl-5-nitroimidazole and 1 part by weight of methylphenyltriazole;

[0064] The preparation method is as in Example 1.

[0065] Example 4

[0066] The composition of the photoresist organic stripping solution is as follows: 15 parts by weight of 3-propanolamine, 5 parts by weight of N-methylformamide, 28 parts by weight of diethylene glycol methyl ether, 20 parts by weight of propylene glycol ethyl ether, 20 parts by weight of methylaminoethanol, 10 parts by weight of 4-methyl-2-pentanol, 1 part by weight of iminobispropylamine and 1 part by weight of gamma-butyrolactone;

[0067] The preparation method is as in Example 1.

[0068] Example 5

[0069] The composition of the photoresist organic stripping solution is as follows: 20 parts by weight of 3-propanolamine, 35 parts by weight of n-butyl ether, 42 parts by weight of dipropylene glycol dimethyl ether, 1 part by weight of thiourea, 1 part by weight of succinic acid and 1 part by weight of gamma-butyrolactone;

[0070] The preparation method is as in Example 1.

[0071] Example 6

[0072] The composition of the photoresist organic stripping solution is as follows: 10 parts by weight of ethylenediamine, 10 parts by weight of dimethylacetamide, 40 parts by weight of n-butanol, 20 parts by weight of diethylene glycol methyl ether, 18 parts by weight of propylene glycol methyl ether, 1 part by weight of glucose and 1 part by weight of N-(2-hydroxyethyl)ethylenediamine;

[0073] The preparation method is as in Example 1.

[0074] Example 7

[0075] The composition of the photoresist organic stripping solution is as follows: 20 parts by weight of N,N-diethylethanolamine, 25 parts by weight of dipropylene glycol dimethyl ether, 22 parts by weight of 2-butanol, 30 parts by weight of diethylene glycol butyl ether, 1 part by weight of (2-hydroxyethyl)ethylenediamine and 2 parts by weight of 1-(2-hydroxyethyl)piperazine;

[0076] The preparation method is as in Example 1.

[0077] Example 8

[0078] Composition of the photoresist organic stripping solution: N-methylformamide 15 parts by weight, N,N-dimethylpropionamide 5 parts by weight, ethanolamine 5 parts by weight, diethylene glycol methyl ether 55 parts by weight, 2-methylaminoethanol 8 parts by weight, diethylene glycol butyl ether 10 parts by weight, N-(2-hydroxyethyl)ethylenediamine 1 part by weight, methylphenyltriazole 0.5 part by weight, and 1-(2-hydroxyethyl)piperazine 0.5 part by weight;

[0079] The preparation method is described in Reference Example 1.

[0080] Example 9

[0081] Composition of the photoresist organic stripping solution: N-methylformamide 15 parts by weight, N,N-dimethylpropionamide 5 parts by weight, ethanolamine 5 parts by weight, diethylene glycol methyl ether 55 parts by weight, 2-methylaminoethanol 8 parts by weight, diethylene glycol butyl ether 10 parts by weight, N-(2-hydroxyethyl)ethylenediamine 1 part by weight, methylphenyltriazole 0.5 part by weight, and 1-(2-hydroxyethyl)piperazine 0.5 part by weight;

[0082] The preparation method is described in Reference Example 1.

[0083] Example 10

[0084] Composition of the photoresist organic stripping solution: N-methylformamide 15 parts by weight, N,N-dimethylpropionamide 5 parts by weight, ethanolamine 5 parts by weight, diethylene glycol methyl ether 55 parts by weight, 2-methylaminoethanol 8 parts by weight, diethylene glycol butyl ether 10 parts by weight, N-(2-hydroxyethyl)ethylenediamine 1 part by weight, methylphenyltriazole 0.5 part by weight, and 1-(2-hydroxyethyl)piperazine 0.5 part by weight;

[0085] The preparation method is described in Reference Example 1.

[0086] Example 11

[0087] Composition of the photoresist organic stripping solution: N-methylformamide 15 parts by weight, N,N-dimethylpropionamide 5 parts by weight, ethanolamine 5 parts by weight, diethylene glycol methyl ether 55 parts by weight, 2-methylaminoethanol 8 parts by weight, diethylene glycol butyl ether 10 parts by weight, N-(2-hydroxyethyl)ethylenediamine 1 part by weight, methylphenyltriazole 0.5 part by weight, and 1-(2-hydroxyethyl)piperazine 0.5 part by weight;

[0088] The preparation method is described in Reference Example 1.

[0089] Example 12

[0090] Composition of the photoresist organic stripping solution: N-methylformamide 15 parts by weight, N,N-dimethylpropionamide 5 parts by weight, ethanolamine 5 parts by weight, diethylene glycol methyl ether 55 parts by weight, 2-methylaminoethanol 8 parts by weight, diethylene glycol butyl ether 10 parts by weight, N-(2-hydroxyethyl)ethylenediamine 1 part by weight, methylphenyltriazole 0.5 part by weight, and 1-(2-hydroxyethyl)piperazine 0.5 part by weight;

[0091] The preparation method is described in Reference Example 1.

[0092] Example 13

[0093] Composition of the photoresist organic stripping solution: N,N-dimethylpropionamide 20 parts by weight, N,N-dimethylacetamide 10 parts by weight, diethylene glycol methyl ether 30 parts by weight, dipropylene glycol propyl ether 20 parts by weight, n-butanol 18 parts by weight, 1-methyl-5-nitroimidazole 0.5 parts by weight, N-(2-hydroxyethyl)ethylenediamine 0.5 parts by weight, and iminodipropylamine 1 part by weight;

[0094] The preparation method is described in Reference Example 1.

[0095] Example 14

[0096] Composition of the photoresist organic stripping solution: N,N-dimethylpropionamide 20 parts by weight, N,N-dimethylacetamide 10 parts by weight, diethylene glycol methyl ether 30 parts by weight, dipropylene glycol propyl ether 20 parts by weight, n-butanol 18 parts by weight, 1-methyl-5-nitroimidazole 0.5 parts by weight, N-(2-hydroxyethyl)ethylenediamine 0.5 parts by weight, and iminodipropylamine 1 part by weight;

[0097] The preparation method is described in Reference Example 1.

[0098] Example 15

[0099] Composition of the photoresist organic stripping solution: N,N-dimethylpropionamide 20 parts by weight, N,N-dimethylacetamide 10 parts by weight, diethylene glycol methyl ether 30 parts by weight, dipropylene glycol propyl ether 20 parts by weight, n-butanol 18 parts by weight, 1-methyl-5-nitroimidazole 0.5 parts by weight, N-(2-hydroxyethyl)ethylenediamine 0.5 parts by weight, and iminodipropylamine 1 part by weight;

[0100] The preparation method is described in Reference Example 1.

[0101] Example 16

[0102] Composition of the photoresist organic stripping solution: N,N-dimethylpropionamide 20 parts by weight, N,N-dimethylacetamide 10 parts by weight, diethylene glycol methyl ether 30 parts by weight, dipropylene glycol propyl ether 20 parts by weight, n-butanol 18 parts by weight, 1-methyl-5-nitroimidazole 0.5 parts by weight, N-(2-hydroxyethyl)ethylenediamine 0.5 parts by weight, and iminodipropylamine 1 part by weight;

[0103] The preparation method is described in Reference Example 1.

[0104] Example 17

[0105] Composition of the photoresist organic stripping solution: N,N-dimethylpropionamide 20 parts by weight, N,N-dimethylacetamide 10 parts by weight, diethylene glycol methyl ether 30 parts by weight, dipropylene glycol propyl ether 20 parts by weight, n-butanol 18 parts by weight, 1-methyl-5-nitroimidazole 0.5 parts by weight, N-(2-hydroxyethyl)ethylenediamine 0.5 parts by weight, and iminodipropylamine 1 part by weight;

[0106] The preparation method is described in Reference Example 1.

[0107] Example 18

[0108] The composition of the organic resist stripping solution was N,N-dimethylpropionamide 10 parts by weight, N-methylformamide 10 parts by weight, diethylene glycol methyl ether 50 parts by weight, propylene glycol methyl ether 10 parts by weight, n-butyl ether 18 parts by weight, and iminodipropylamine 3 parts by weight;

[0109] The preparation method was as in Reference Example 1.

[0110] Example 19

[0111] The composition of the organic resist stripping solution was N-methylacetamide 10 parts by weight, ethylenediamine 5 parts by weight, diethylene glycol butyl ether 20 parts by weight, glycerol 20 parts by weight, 2-methylaminoethanol 20 parts by weight, propylene glycol methyl ether 22 parts by weight, 1-(2-hydroxyethyl)piperazine 1 part by weight, methylbenzotriazole 1.5 parts by weight, and N-ethylpyrrolidone 0.5 parts by weight;

[0112] The preparation method was as in Reference Example 1.

[0113] Example 20

[0114] The composition of the organic resist stripping solution was N-methylformamide 20 parts by weight, diethylene glycol methyl ether 60 parts by weight, diethylene glycol butyl ether 10 parts by weight, triethyiaminoethanol 8 parts by weight, N-ethylpyrrolidone 0.5 parts by weight, N-(2-hydroxyethyl)ethylenediamine 1 part by weight, and 1-(2-hydroxyethyl)piperazine 0.5 parts by weight;

[0115] The preparation method was as in Reference Example 1.

[0116] Example 21

[0117] The composition of the organic resist stripping solution was N-methylformamide 15 parts by weight, N,N-dimethylpropionamide 5 parts by weight, ethanolamine 5 parts by weight, diethylene glycol methyl ether 55 parts by weight, 2-methylaminoethanol 8 parts by weight, diethylene glycol butyl ether 10 parts by weight, N-(2-hydroxyethyl)ethylenediamine 0.5 parts by weight, methylbenzotriazole 0.5 parts by weight, (2-hydroxyethyl)piperazine 0.5 parts by weight, and N-ethylpyrrolidone 0.5 parts by weight;

[0118] The preparation method was as in Reference Example 1.

[0119] Comparative Example 1

[0120] The composition of the organic resist stripping solution was N,N-dimethylacetamide 20 parts by weight, ethylene glycol methyl ether 50 parts by weight, 1-methylpiperazine 20 parts by weight, N-methyl-2-pyrrolidone 8 parts by weight, 1-(2-hydroxyethyl)piperazine 1 part by weight, and N-ethylpyrrolidone 1 part by weight;

[0121] The preparation method is referred to Example 1.

[0122] Comparative Example 2

[0123] The composition of the photoresist organic stripping solution: 20 parts by weight of ethylenediamine, 60 parts by weight of ethylene glycol methyl ether and 20 parts by weight of N-methyl-2-pyrrolidone;

[0124] The preparation method is referred to Example 1.

[0125] Test Example

[0126] The stripping time was measured as follows: 100 g of the photoresist organic stripping solution described in Examples 1-21 and Comparative Examples 1-2 was placed in a 150 mL beaker, which was kept at a constant temperature of 45°C in a water bath, and the experimental substrate was then put into the beaker to start timing. After the photoresist on the surface of the substrate was completely stripped, the sample was taken out, and the stripping time was recorded.

[0127] The corrosion condition was determined as follows: 100 g of the photoresist organic stripping solution described in Examples 1-21 and Comparative Examples 1-2 was placed in a 150 mL beaker, which was kept at a constant temperature of 45°C in a water bath, and the experimental substrate (gate substrate) was then put into the beaker to start timing. After 2 h, the sample was taken out, and the corrosion condition of the sample was observed under a metallographic optical microscope (OM).

[0128] The test results are shown in Table 1.

[0129] Table 1: Stripping performance and corrosion performance of the photoresist organic stripping solution described in Examples 1-21 and Comparative Examples 1-2

[0130]

[0131]

[0132] The above only describes the preferred embodiments of the present application. It should be noted that, for those skilled in the art, without departing from the principles of the present application, a number of improvements and refinements can be made, which should also be considered as falling within the scope of protection of the present application.

Claims

1. A photoresist organic stripping solution, characterized in that: The invention is composed of the following components in parts by weight: 20 parts by weight of N-methylformamide, 60 parts by weight of diethylene glycol methyl ether, 10 parts by weight of diethylene glycol butyl ether, 8 parts by weight of triethylaminoethanol, 0.5 parts by weight of N-ethylpyrrolidone, 1 part by weight of N-(2-hydroxyethyl)ethylenediamine and 0.5 parts by weight of 1-(2-hydroxyethyl)piperazine.

2. The method for preparing the photoresist organic stripping solution according to claim 1, characterized in that: The following steps are involved: N-methylformamide, diethylene glycol methyl ether, diethylene glycol butyl ether, triethylaminoethanol, N-ethylpyrrolidone, N-(2-hydroxyethyl)ethylenediamine and 1-(2-hydroxyethyl)piperazine are mixed to obtain the photoresist organic stripping solution.

3. The preparation method according to claim 2, wherein The mixing temperature is room temperature and the mixing time is 8 to 12 hours.

4. Use of the photoresist organic stripping solution according to claim 1 in the preparation of liquid crystal panels.

Images