Atomic gas chamber inner and outer ring double-layer non-magnetic electric heating device based on MEMS technology

Abstract

The invention discloses an atomic gas chamber inner and outer ring double-layer non-magnetic electric heating device based on an MEMS technology. The atomic gas chamber inner and outer ring double-layer non-magnetic electric heating device comprises a boron nitride heat preservation structure, a double-layer inner and outer ring heating film and a vertically symmetrical platinum resistor multi-point temperature measuring system. When the atom magnetometer gas chamber based on the spin exchange relaxation effect is in operation, the uniform non-magnetic heating effect of the atom gas chamber based on the MEMS process is realized through the combined action of the double-layer inner and outer ring heating films on the boron nitride heat preservation structure and the multi-point temperature measurement system. The method comprises the following steps: firstly, preparing a double-layer inner and outer ring heating film wiring structure on the surface of glass through an MEMS (Micro Electro Mechanical System) process to realize uniform non-magnetic electric heating; secondly, a vertically symmetrical platinum resistor multi-point temperature measuring system is machined on the boron nitride heat preservation structure, and temperature collection of different positions in the atomic gas chamber based on the MEMS technology is achieved. According to the invention, non-magnetic uniform heating of the atomic gas chamber based on the MEMS technology can be realized, and the heating requirements of other atomic spin quantum sensors are met.

Description

Technical Field

[0001] The present invention belongs to the field of quantum precision measurement, and specifically relates to a double-layer non-magnetic electric heating device with inner and outer circles in an atomic gas chamber based on a MEMS process, which meets the heating requirements of the atomic gas chamber and ensures non-magnetic and highly uniform heating. Background Art

[0002] SERF atomic magnetometer has great potential in the future scientific research and practical product development of ultra-high sensitivity magnetic field measurement. The alkali metal gas chamber is the core component of the atomic magnetometer. It must be sealed, light-transmitting, non-magnetic, and high-temperature resistant. Its performance directly affects the measurement capability of the atomic magnetometer. However, since alkali metals are solid at room temperature, it is necessary to increase the temperature inside the alkali metal gas chamber.

[0003] The stability of the gas chamber determines the long-term working performance of the magnetometer. The main reasons for the instability of the gas chamber state are defect failure caused by uneven temperature field and fatigue failure caused by internal component dissipation. Therefore, it is necessary to optimize the design of the gas chamber heating system while accurately controlling the gas chamber temperature to achieve uniform heating. Therefore, a solution that can accurately control the heating temperature and improve the heating uniformity is urgently needed. Summary of the invention

[0004] Technical problem solved by the present invention: In view of the deficiencies of the above-mentioned existing problems, a temperature control system of an inner and outer double-layer heating film for an atomic gas chamber is provided, which can achieve uniform heating while accurately controlling the temperature.

[0005] To achieve the above purpose, the technical solution adopted by the present invention is: A double-layer non-magnetic electric heating device with inner and outer circles in an atomic gas chamber based on MEMS technology, the device comprises a boron nitride insulation structure, a double-layer inner and outer circle heating film, and a top-bottom symmetrical platinum resistor multi-point temperature measurement system; the double-layer inner and outer circle heating film is arranged on both sides of the boron nitride insulation structure; the double-layer inner and outer circle heating film comprises an insulating layer and an upper and lower double-layer coil; the double-layer inner and outer circle heating film is prepared on the glass surface by MEMS technology to realize uniform non-magnetic electric heating; secondly, the top-bottom symmetrical platinum resistor multi-point temperature measurement system is processed on the boron nitride insulation structure to realize temperature collection at different positions inside the atomic gas chamber based on MEMS technology.

[0006] The advantages of the present invention compared with the prior art are: The present invention designs a double-layer inner and outer circle heating film to solve the problem of large temperature gradient and uneven temperature on the light-through hole surface.

[0007] The double-layer inner and outer ring heating films on the boron nitride insulation structure work together with the multi-point temperature measurement system to effectively improve the heating temperature uniformity of the light aperture surface.

[0008] The first rectangular outer ring pattern adopts a special arrangement, that is, the wires are arranged in a rectangular layout so that the current transmission directions of the two opposing wires are opposite to each other to achieve the optimal demagnetization effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 This is a schematic diagram of the structure of the upper layer heating film of the present invention; Figure 3 This is a schematic diagram of the structure of the middle and lower heating films of the present invention; Figure 4 This is a schematic diagram of the location of the circular hole for measuring temperature with a platinum resistor in the present invention.

[0010] The reference numerals in the figure are: Upper coil 1, insulating layer 2, lower coil 3, upper and lower symmetrical platinum resistance multi-point temperature measurement system 4, boron nitride insulation structure 5, upper first rectangular outer circle pattern 11, upper second circular inner circle pattern 12, upper inner circle insulation layer through hole 13, upper inner circle power pin 14, upper outer circle insulation layer through hole 15, upper outer circle power pin 16, lower first rectangular outer circle pattern 31, lower second circular inner circle pattern 32, lower inner circle insulation layer through hole 33, lower inner circle power pin 34, lower insulation layer outer circle through hole 35, lower outer circle power pin 36, first temperature measuring point 41, second temperature measuring point 42, third temperature measuring point 43, fourth temperature measuring point 44, fifth temperature measuring point 45, sixth temperature measuring point 46. DETAILED DESCRIPTION

[0011] In order to make the purpose, technical scheme and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other. To achieve the above-mentioned purpose, the present invention adopts the following technical scheme.

[0012] A double-layer non-magnetic electric heating device for inner and outer circles of an atomic gas chamber based on MEMS technology, including a boron nitride insulation structure 5, a double-layer inner and outer circle heating film, and a top-to-bottom symmetrical platinum resistor multi-point temperature measurement system 4; when the air chamber of a SERF (Spin-ExchangeRelaxation-Free, SERF) atomic magnetometer works, the double-layer inner and outer circle heating film on the boron nitride insulation structure 5 and the top-to-bottom symmetrical platinum resistor multi-point temperature measurement system 4 work together to achieve a uniform non-magnetic heating effect of the atomic gas chamber based on the MEMS process. First, a double-layer inner and outer circle heating film routing structure is prepared on the glass surface through the MEMS process to achieve uniform non-magnetic electric heating; secondly, a top-to-bottom symmetrical platinum resistor multi-point temperature measurement system 4 is processed on the boron nitride insulation structure 5 to achieve temperature collection at different positions inside the atomic gas chamber based on the MEMS process. The present invention can achieve non-magnetic uniform heating of the atomic gas chamber based on the MEMS process, can be used for heating the air chamber of a SERF atomic magnetometer, and is suitable for heating requirements of other atomic spin quantum sensors.

[0013] Six circular holes for placing platinum resistors are processed on the boron nitride heat preservation structure 5, and the six circular holes for placing platinum resistors are all parallel to the placement surface of the double-layer inner and outer ring heating films, that is, the light-through hole surface.

[0014] The double-layer inner and outer ring heating film forms a nickel-chromium alloy conductor pattern on a glass substrate through magnetron sputtering and stripping processes. The conductor pattern includes an upper and lower double-layer winding coil structure, the double-layer coils are separated by an insulating layer and are distributed in a mirror-symmetrical manner, and the upper and lower double-layer coils are connected by a through-hole conductor that crosses the insulating layer.

[0015] The upper and lower symmetrical platinum resistor multi-point temperature measurement system 4 has multiple platinum resistor placement holes reserved on the boron nitride insulation structure plane parallel to the light-through hole surface and 1 cm close to the air chamber. The platinum resistor placement holes on the upper and lower light-through hole surfaces are symmetrically distributed.

[0016] The up-and-down symmetrical platinum resistor multi-point temperature measurement system 4 grinds circular holes symmetrically distributed with the light hole as the center on the light hole surface of the boron nitride insulation structure 5 as circular holes for placing multi-point temperature measuring platinum resistors. The size of each temperature measuring platinum resistor corresponds to the size of the circular hole for placing the platinum resistor, and the wire is directly led out from the circular hole for placing the platinum resistor to the external system; The patterns of the upper coil 1 and the lower coil 3 on one side of the double-layer inner and outer circle heating film both include a first rectangular outer circle pattern and a second circular inner circle pattern. The first rectangular outer circle pattern adopts a special arrangement, that is, the wires are arranged in a rectangular layout so that the current transmission directions of the two opposing wires are opposite to each other to achieve the optimal demagnetization effect. The wire width of the second circular inner circle pattern is narrowed and distributed in a circular winding along the edge of the light-through hole, forming an inner and outer double circle structure in the heating area. The first rectangular outer circle and the second circular inner circle lead out circular power pins through two long wires, away from the core heating area; like Figure 1As shown, the overall structure of the present invention includes: a double-layer inner and outer ring heating film, an insulating layer 2, a top-bottom symmetrical platinum resistor multi-point temperature measurement system 4, and a boron nitride insulation structure 5; the double-layer inner and outer ring heating film includes an upper coil 1, an insulating layer 2, and a lower coil 3. The upper coil 1 and the lower coil 3 are mirror-symmetrically distributed on the upper and lower sides of the insulation layer, the double-layer inner and outer ring heating film is pasted on the upper and lower symmetrical surfaces of the boron nitride insulation structure 5, and the top-bottom symmetrical platinum resistor multi-point temperature measurement system 4 is embedded in the boron nitride insulation structure 5 and is parallel to the placement surface of the double-layer inner and outer ring heating film.

[0017] like Figure 2 As shown, the upper coil 1 in the present invention includes: an upper first rectangular outer circle pattern 11, an upper second circular inner circle pattern 12, an upper inner circle insulating layer through hole 13, an upper outer circle insulating layer through hole 15, an upper inner circle power pin 14, and an upper outer circle power pin 16.

[0018] like Figure 3 As shown, the lower coil 3 in the present invention includes: a lower first rectangular outer circle pattern 31, a lower second circular inner circle pattern 32, a lower inner circle insulating layer through hole 33, a lower insulating layer outer circle through hole 35, a lower inner circle power pin 34, and a lower outer circle power pin 36.

[0019] like Figure 4 As shown, the circular holes for placing platinum resistors in the present invention are located on the oven and are symmetrically distributed up and down, including: a first temperature measuring point 41, a second temperature measuring point 42, a third temperature measuring point 43, a fourth temperature measuring point 44, a fifth temperature measuring point 45, and a sixth temperature measuring point 46.

Claims

1. A double-layer non-magnetic electric heating device with inner and outer circles of atomic gas chamber based on MEMS technology, characterized in that: The device includes a boron nitride insulation structure, a double-layer inner and outer circle heating film, and an upper and lower symmetrical platinum resistor multi-point temperature measurement system; the double-layer inner and outer circle heating film is arranged on the upper and lower sides of the boron nitride insulation structure; the double-layer inner and outer circle heating film includes an insulating layer and upper and lower double-layer coils; the double-layer inner and outer circle heating film is prepared on the glass surface by MEMS technology to achieve uniform non-magnetic electric heating; the upper and lower symmetrical platinum resistor multi-point temperature measurement system is processed on the boron nitride insulation structure to realize temperature collection at different positions inside the atomic gas chamber based on MEMS technology.

2. The double-layer non-magnetic electric heating device with inner and outer circles of atomic gas chamber based on MEMS technology according to claim 1 is characterized in that: Six circular holes for placing platinum resistors are processed on the boron nitride thermal insulation structure, and the six circular holes for placing platinum resistors are all parallel to the placement surface of the double-layer inner and outer ring heating films.

3. The double-layer non-magnetic electric heating device with inner and outer circles of atomic gas chamber based on MEMS technology according to claim 1 is characterized in that: The double-layer inner and outer ring heating film forms a nickel-chromium alloy conductor pattern on a glass substrate through magnetron sputtering and stripping processes. The conductor pattern includes an upper and lower double-layer coil structure. The upper and lower double-layer coils are separated by an insulating layer and are distributed in a mirror-symmetrical manner. The upper and lower double-layer coils are connected by a through-hole conductor that crosses the insulating layer.

4. The double-layer non-magnetic electric heating device with inner and outer circles of atomic gas chamber based on MEMS technology according to claim 1 is characterized in that: The upper and lower symmetrical platinum resistor multi-point temperature measurement system reserves a plurality of circular holes for placing platinum resistors on a boron nitride insulation structure plane parallel to the light-through hole surface and 1 cm near the air chamber, and the circular holes for placing platinum resistors on the upper and lower light-through hole surfaces are symmetrically distributed.

5. The double-layer non-magnetic electric heating device with inner and outer circles of atomic gas chamber based on MEMS technology according to claim 1 is characterized in that: The up-and-down symmetrical platinum resistor multi-point temperature measurement system grinds circular holes symmetrically distributed with the light-through hole as the center on the light-through hole surface of the boron nitride insulation structure as circular holes for placing multi-point temperature measuring platinum resistors. The size of each temperature measuring platinum resistor corresponds to the size of the circular hole for placing the platinum resistor, and the wires are directly led out from the circular holes for placing the platinum resistors to the external system.

6. The double-layer non-magnetic electric heating device with inner and outer circles of atomic gas chamber based on MEMS technology according to claim 3 is characterized in that: The coil pattern on one side of the double-layer inner and outer circle heating film includes a first rectangular outer circle pattern and a second circular inner circle pattern; the first rectangular outer circle pattern adopts a special arrangement to achieve the optimal demagnetization effect, and the wire width of the second circular inner circle pattern is narrowed and distributed in a circular manner along the edge of the light-through hole, forming an inner and outer double circle structure in the heating area; the first rectangular outer circle and the second circular inner circle are led out to circular power pins through two long wires, away from the core heating area.

7. The double-layer non-magnetic electric heating device with inner and outer circles of atomic gas chamber based on MEMS technology according to claim 6 is characterized in that: The first rectangular outer circle wires are arranged in a rectangular layout so that the currents transmitted by the wires facing each other are in opposite directions.

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