Two-dimensional resistance type sensor array suitable for measurement in high-temperature environment

Abstract

The invention provides a two-dimensional resistive sensor array suitable for measurement in a high-temperature environment, and belongs to the technical field of sensors, the resistive sensor array comprises a substrate, an array circuit and an insulation protection layer, the array circuit comprises a front sensor array and a back terminal circuit, the front sensor array comprises a transverse wire, a longitudinal wire, a sensor unit and a node insulating layer, the sensor unit is a dual-electrode sensor, electrodes at the two ends of the sensor unit are connected with the transverse wire and the longitudinal wire respectively, the node insulating layer is used for insulating the crossed part of the transverse wire and the longitudinal wire, and the resistance type sensor array is a thick film or thin film circuit; the number of external connection ports can be greatly reduced while a large number of two-dimensional distribution physical parameter fields are measured, measurement under various high-temperature, high-pressure and high-vibration severe environments can be achieved through the manufacturing material and the packaging technology, and the influence caused by invasion of a measured object is reduced to the maximum extent.

Description

Technical Field

[0001] The present invention belongs to the technical field of sensors, and in particular, relates to a two-dimensional resistance sensor array suitable for measuring in a high temperature environment. Background Art

[0002] A sensor array is a system that combines a group of sensors in a reasonable layout to form an overall system, which is used to measure physical parameters such as temperature and pressure in two dimensions. Compared with a single sensor, a sensor array adds a new dimension to observation, gets rid of the defect of only being able to measure discrete data points, obtains more parameter information and greatly reduces the number of required interfaces. With the further deepening of research in aerospace, meteorological testing, weapons and equipment, and the rise of hot fields such as biomedicine, artificial skin, and smart fabrics, a single sensor is difficult to meet requirements such as dynamic range and measurement dimensions. The importance of sensor arrays is increasing, and they are beginning to be widely used in measurement environments in various industrial industries.

[0003] In fields such as aerospace, power machinery, weapons and equipment, equipment monitoring and diagnosis have always been important issues in their development process. In such application scenarios, the internal parameter field distribution characteristics are very strong, and the low-density discrete point information provided by traditional single sensors is difficult to effectively and accurately monitor the operating status of the equipment. By measuring the physical parameters of the surface of an object through a two-dimensional sensor array, high-density two-dimensional distribution data can be obtained, and the two-dimensional distribution of physical parameters such as temperature and pressure can be accurately measured, providing richer and higher-density reliable information for parameter perception and status monitoring.

[0004] However, in the prior art, the use of sensor arrays is limited to parameter measurements within the normal temperature range. For a large number of real industrial measurement environments, the temperature is very high, and the existing sensor arrays cannot meet the measurement requirements in such harsh environments.

[0005] Existing sensor array systems are mostly used in the fields of intelligent robots, artificial skin, and intelligent fabrics, and are limited to parameter measurements within the normal temperature range. However, for important industrial industries such as aerospace and power machinery, the measurement environment is usually accompanied by extremely harsh conditions such as extremely high temperatures and high-speed flows. Currently, there is no two-dimensional sensor array for measurement in high-temperature conditions or related problems. The original high-temperature measurement method measures a local single point, which is very easy to cause misjudgment of the current working status, thereby increasing maintenance costs and even causing significant losses. Adding discrete sensors will increase a large number of sensor cables, seriously increasing the quality burden of various types of mechanical equipment. Summary of the invention

[0006] In view of the shortcomings of the prior art, the present invention is based on the basic principles of resistive sensor arrays. In order to further expand the application scope of resistive sensor arrays in high-temperature measurement environments and improve measurement accuracy, a two-dimensional resistive sensor array suitable for measurement in high-temperature environments and a high-temperature resistant sensor array precise measurement algorithm are proposed, which can be applied to the precise measurement of the two-dimensional parameter field distribution of the measured surface in a high-temperature measurement environment.

[0007] The present invention is achieved through the following technical solutions:

[0008] A two-dimensional resistive sensor array suitable for measurements in high temperature environments:

[0009] The two-dimensional resistance sensor array includes a substrate, an array circuit, a terminal circuit and an insulating protection layer;

[0010] The substrate is used to carry the array circuit and the terminal circuit and to achieve isolation from the substrate. The substrate is also provided with a substrate insulating through hole for connecting the circuits on both sides.

[0011] The array circuit includes a front sensor array and a back terminal circuit, which are used for realizing sensor functions and connecting with an external drive acquisition system.

[0012] The insulating protection layer is used for packaging and insulating protection of the entire sensor array.

[0013] Furthermore, the substrate is an insulating material, and the non-insulating material is provided with a substrate insulating layer on the front and back surfaces.

[0014] The front sensor array includes a transverse wire, a longitudinal wire, a sensor unit and a node insulation layer;

[0015] The transverse wire and the sensor unit are the bottom layer, which are directly arranged on the substrate surface insulation layer, and the node insulation layer is used to insulate the intersection of the transverse wire and the longitudinal wire;

[0016] The longitudinal wire is the top layer, which is arranged on the node insulation layer, and is connected to the sensor unit through the node insulation layer through-hole arranged on the node insulation layer.

[0017] Furthermore, the transverse wires and the longitudinal wires are both strip wire circuits, the transverse wires and the longitudinal wires form a cross-grid structure, the sensor unit is arranged in the grid area, the sensor unit is a dual-electrode sensor, one end is connected to the adjacent transverse wire, and the other end is connected to the adjacent longitudinal wire through a blank space reserved in the node insulation layer.

[0018] Furthermore, both ends of the transverse guide and longitudinal wires extend to the position of the substrate insulating through-holes, the back terminal circuit is connected to the front sensor array through the substrate insulating through-holes, and wiring electrodes connected to the outside are provided for inputting external driving signals and outputting measuring signals.

[0019] Furthermore, in the sensor array, the circuit and the sensor unit are both thick film or thin film structures. For thick film circuits, the thickness of a single-layer circuit structure is less than 10 μm; for thin film circuits, the thickness is less than 1 μm;

[0020] The width of the transverse wire and the longitudinal wire is between 0.5 and 5 mm, and the sensor unit is a serpentine structure with a width between 10 μm and 0.5 mm.

[0021] A method for preparing a two-dimensional resistive sensor array suitable for measuring in a high temperature environment:

[0022] The method comprises the following steps:

[0023] Step 1: Open a substrate insulating through hole on the substrate. If the substrate is a non-insulating material, a substrate insulating layer needs to be prepared on both sides of the substrate;

[0024] Step 2, arranging a transverse wire and a resistance type sensor on the front surface of the substrate;

[0025] Step 3, setting a node insulation layer on the upper layer of the transverse wire and the resistance type sensor;

[0026] Step 4, arranging a longitudinal conductor on the upper layer of the node insulation layer;

[0027] Step 5, setting a terminal circuit on the back surface of the substrate, and filling the insulating through hole of the substrate with a conductive material to connect the circuits on both sides;

[0028] Step 6: Set an insulating protective layer on the front side of the substrate to complete the sensor packaging.

[0029] An electronic device comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the above method when executing the computer program.

[0030] A computer-readable storage medium is used to store computer instructions, and when the computer instructions are executed by a processor, the steps of the above method are implemented.

[0031] Beneficial effects of the present invention

[0032] The present invention solves the problem of low upper limit of sensor array working temperature, realizes the function of accurate measurement under high temperature measurement conditions, improves the information density of the measurement results of high temperature measured objects and greatly reduces the number of wiring ports;

[0033] The array designed by the present invention can be used accurately even at a high temperature of 1000° C., which is impossible for current sensor arrays. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a schematic diagram of the structure of a two-dimensional resistive sensor array system suitable for measurement in a high-temperature environment proposed by the present invention.

[0035] Figure 2 This is a partial cross-sectional view of a two-dimensional resistive sensor array suitable for measurement in a high-temperature environment proposed by the present invention.

[0036] Figure 3 This is a partial three-dimensional schematic diagram of a sensor array of a two-dimensional resistive sensor array suitable for measurement in a high temperature environment proposed by the present invention.

[0037] Figure 4 This is a three-dimensional schematic diagram of the circuit structure on both sides of a base in a two-dimensional resistive sensor array suitable for measurement in a high temperature environment proposed by the present invention.

[0038] Figure 5 This is a flow chart of a method for manufacturing a two-dimensional measurement sensor based on a resistive sensor array proposed by the present invention.

[0039] Figure 6 It is a measurement algorithm equivalent circuit of a two-dimensional measurement sensor system in an embodiment of the present invention.

[0040] In the figure: 1, substrate, 2, array circuit, 3, terminal circuit, 4, insulating protective layer, 5, horizontal wire, 6, sensor unit, 7, vertical wire, 8, node insulating layer, 9, node insulating layer through hole, 10, substrate insulating through hole, 11, substrate insulating layer, 12, wiring electrode. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] The experimental methods used in the following examples are conventional methods unless otherwise specified. The materials, reagents, methods and instruments used are conventional materials, reagents, methods and instruments in the art unless otherwise specified, and can be obtained through commercial channels by those skilled in the art.

[0043] In the sensor array of the present invention, in order to adapt to the high temperature characteristics in various industrial measurement environments, its preparation material needs to select high temperature resistant materials such as platinum, tungsten, ITO ceramics, etc., and conventional metal materials and carbon materials such as gold, silver, copper, etc. can also be selected according to the actual application environment. The preparation material should not be regarded as a limitation to this application.

[0044] like Figure 1 , 2 As shown; the present invention proposes a two-dimensional resistive sensor array suitable for measurement in a high temperature environment; the two-dimensional resistive sensor array comprises a substrate 1, an array circuit 2, a terminal circuit 3 and an insulating protective layer 4;

[0045] The substrate 1 is an insulating material, and the non-insulating material is provided with a substrate insulating layer 11 on the front and back sides, which is used to carry the array circuit 2 and the terminal circuit 3 and to be isolated from the substrate 1. The substrate 1 is also provided with a substrate insulating through hole 10 for connecting the circuits on both sides;

[0046] The array circuit 2 serves as the sensing layer of the system. It includes a sensor array on the front and a terminal circuit 3 on the back, which are used to realize the sensor function and connect with the external drive acquisition system.

[0047] The insulating protective layer 4 is used for packaging and insulating protection of the entire sensor array. The insulating protective layer material 4 is composed of one or more materials such as aluminum oxide, zirconium oxide, and yttrium oxide, and is prepared from corresponding high-temperature resistant materials according to the needs of the object to be measured, and can adapt to the high-temperature environment in which the object to be measured is located; according to the different preparation materials selected, the sensor array can achieve normal operation in the ambient temperature range of 0 to 1000°C.

[0048] The insulating protective layer 4 covers the entire sensor array, and can isolate the sensor array from the object to be measured, play the role of insulation and packaging, ensure the performance of the sensor array and protect the sensor array structure. In addition, insulating layers are also set on both sides of the substrate 1 and in the middle of the sensor array. The insulating protective layer between the substrate 1 and the circuit can provide the necessary insulating plane for the preparation of the film circuit on the one hand, and on the other hand, it can increase the adhesion ability of the sensor array to adapt to a more severe measurement environment. The node insulation layer between the horizontal wire 5 and the vertical wire 7 is mainly used to isolate the intersection, thereby reducing the generation of sub-loops in the array circuit and suppressing crosstalk errors in the measurement. The specific material of the insulating layer should not be understood as a limitation on the present application.

[0049] like Figure 3 FIG. 1 is a schematic three-dimensional diagram of a sensor array portion of a two-dimensional resistive sensor array in a specific implementation scheme of the present invention.

[0050] The substrate 1 is provided with node insulation layer through holes 9 at both ends of the transverse conductor 5 and the longitudinal conductor 7. The front sensor array circuit is connected to the back terminal circuit 3 by preparing a connecting conductor in the node insulation layer through hole 9. The back terminal circuit 3 is provided with an interface electrode for connecting to an external driving acquisition system equipped with a high-temperature resistant sensor array precise measurement algorithm.

[0051] The front sensor array includes a transverse wire 5, a longitudinal wire 7, a sensor unit 6 and a node insulation layer 8; the high temperature resistant material is selected as its preparation material. The advantage is that the sensor array structure can be directly set on the side close to the object to be measured, making the measurement more accurate. At the same time, the improvement of the overall temperature resistance performance can significantly reduce the difficulty of the manufacturing process and the requirements for the process.

[0052] The transverse conductor 5 and the sensor unit 6 are the bottom layer, which are directly arranged on the substrate surface insulating layer 11, and the node insulating layer 8 is used to isolate the intersection of the transverse conductor 5 and the longitudinal guide 7, so as to prevent the short circuit caused by direct connection from interfering with the measurement result;

[0053] The longitudinal wire 7 is the top layer, which is arranged on the node insulation layer 8, and is connected to the sensor unit 6 through the node insulation layer through hole 9 arranged on the node insulation layer 8;

[0054] A large number of sensor units 6 are arranged in the two-dimensional resistive sensor array for measurement. The sensor unit 6 is a dual-electrode structure, and the electrodes are respectively connected to the horizontal wire 5 and the vertical wire 7, which can greatly reduce the number of external wiring. This layout needs to be processed with the high temperature resistant sensor array accurate measurement algorithm to obtain accurate resistance value;

[0055] The sensor unit 6 is a dual-electrode sensor, the electrodes at both ends of which are respectively connected to the transverse wire 5 and the longitudinal wire 7, and the node insulation layer 8 is used to insulate the intersection of the transverse wire 5 and the longitudinal wire 7;

[0056] The transverse wires 5 and the longitudinal wires 7 form a cross-lattice structure, and the sensor unit 6 is arranged in the square grid area, one end of which is connected to the adjacent transverse wire 5, and the other end is connected to the adjacent longitudinal wire 7 through the reserved space of the node insulation layer 8, thereby realizing a connection mode in which multiple resistance-type sensors share one end electrode, achieving the purpose of reducing the number of external ports. The back terminal circuit is mainly used for the arrangement of connection terminals.

[0057] In the embodiment, the sensor unit 6 is a platinum thermal resistor sensor. Platinum metal can adapt to high-temperature measurement environments, and platinum thermal resistors have good long-term stability and measurement accuracy.

[0058] The sensor unit 6 may be a temperature sensor or other types of dual-electrode resistance sensors, such as a pressure sensor, a strain sensor, a photosensor, a humidity sensor, etc., and its material may also be other materials, such as a carbon material, a metal material or a ceramic material. The carbon material is any one of graphene and carbon nanotubes, the ceramic material is any one of ITO, SiCN, and alumina, and the metal material is any one of gold, silver, copper, nickel, aluminum, and platinum. The specific type and material of the sensor should not be understood as limiting the present application.

[0059] The substrate 1 is provided with node insulating layer through holes 9 at positions corresponding to the two ends of the transverse wire 5 and the longitudinal wire 7. The node insulating layer through holes 9 are filled with conductive material to achieve connectivity between the front sensor array and the back terminal circuit 3. The conductive material in the through holes has good sealing performance, which can reduce the impact of the high-temperature sensed area on the reliability of the circuits on both sides and the external connection terminals.

[0060] In the above-mentioned sensor array, the circuit and the sensor unit 6 are both thick film or thin film structures, and their preparation methods include but are not limited to electronic screen printing, vapor deposition, magnetron sputtering, etc. For thick film circuits, the thickness of a single-layer circuit structure is less than 10μm, and for thin film circuits, the thickness is less than 1μm. The horizontal wires 5 and the vertical wires 7 are both strip wire circuits with a width between 0.5 and 5mm. The sensor unit 6 is a serpentine structure with a width between 10μm and 0.5mm.

[0061] Figure 4 This is a three-dimensional schematic diagram of the substrate and the structures on both sides of the two-dimensional resistive sensor array in a specific implementation scheme proposed by the present invention. The two ends of the transverse guide 5 and the longitudinal wire 7 extend to the position of the substrate insulating through hole 10. The back terminal circuit 3 is connected to the front sensor array through the substrate insulating through hole 10, and is provided with a wiring electrode 12 connected to the outside for inputting external driving signals and outputting measurement signals.

[0062] like Figure 5 In one implementation method of an embodiment of the present application, a method for manufacturing a two-dimensional measurement sensor system is provided, comprising the following steps:

[0063] Step 1, a substrate insulating through hole 10 is formed on a substrate 1. If the substrate is made of a non-insulating material, a substrate insulating layer 11 needs to be formed on both sides of the substrate.

[0064] Step 2, arranging a transverse conductor 5 and a resistance sensor 6 on the front surface of the substrate 1;

[0065] Step 3, a node insulating layer 8 is provided on the upper layer of the transverse wire 5 and the resistance type sensor 6;

[0066] Step 4, arranging a longitudinal conductor 7 on the upper layer of the node insulating layer 8;

[0067] Step 5, a terminal circuit 3 is provided on the back surface of the substrate 1, and a conductive material is filled in the substrate insulating through hole 9 to connect the circuits on both sides;

[0068] Step 6: Dispose an insulating protective layer 4 on the front side of the substrate 1 to complete the sensor packaging.

[0069] An electronic device comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the above method when executing the computer program.

[0070] A computer-readable storage medium is used to store computer instructions, and when the computer instructions are executed by a processor, the steps of the above method are implemented.

[0071] In a specific embodiment, all circuit and sensor materials are platinum metal, which is prepared by electronic screen printing. The insulating layer material is aluminum oxide, which is prepared by plasma spraying or thick film printing and sintering. The through-hole filling material is a conductive platinum paste, which is solidified by high-temperature sintering. In this specific embodiment, in order to ensure that the sensor has an appropriate resistance value and measurement accuracy, the serpentine structure of the resistive sensor has a width of less than 0.15 mm, a length of 80 to 100 mm, and a thickness of 0.1 to 8 μm. In order to ensure that the insulating layer has reasonable insulation properties, its thickness in this embodiment should not be less than 30 μm. The size of the through hole is determined by the size of the array circuit, and the side length of the square hole ranges from 0.5 to 2 mm.

[0072] The high temperature resistant sensor array 2 measurement algorithm inputs a driving signal to the driving end of the sensor array 2 and collects the output signal of the collecting end of the sensor array 2. On the basis of the existing measurement algorithm, considering that the sensor array 2 as a whole is made of high temperature resistant materials with large resistivity and obvious temperature characteristics, there is a deviation between the measured value and the actual value. The measurement deviation is solved and corrected through the designed calculation method to obtain the resistance value of each sensor unit 6 in the sensor array 2.

[0073] Figure 6 In an implementation method of an embodiment of the present application, a measurement algorithm equivalent circuit of a two-dimensional measurement sensor system is provided. The biggest difference between the circuit in this application and the existing sensor array circuit is that the lateral wire resistance R r And the longitudinal wire resistance R c The principle of the previous measurement algorithm is that the current flowing through the resistor R s The current is the sum of the currents of all sensor units in the column. r With V c The corresponding circuit equation can be listed based on the measurement.

[0074]

[0075] By inputting different initial signals V to the sensor unit row direction q , different measurement values ​​are obtained, thus listing the non-homogeneous linear circuit equations.

[0076]

[0077] However, the wire resistance R r With R c The voltage division makes the measured row and column potential V r With V c It is not the actual potential value of the electrodes at both ends of the sensor unit, so the coefficient matrix of the non-homogeneous linear circuit equation group will have serious deviations, resulting in a serious discrepancy between the calculated measurement value and the actual resistance value, and the measurement work cannot be completed. In the high temperature resistant sensor array precise measurement algorithm of the two-dimensional measurement sensor array proposed in this application, since the horizontal wire 5, the longitudinal wire 7 and the sensor unit 6 are made of the same material, the resistance value ratio of the wire along the way and the sensor unit at any temperature satisfies:

[0078]

[0079]

[0080] Then the actual potential value at both ends of each resistance unit can be derived.

[0081]

[0082]

[0083] In one specific implementation, the formula is further simplified by further expanding the potential value and ignoring the high-order terms of the coefficient φ, and the exact solution is quickly obtained by iteration after the result is obtained. In another specific implementation, a convolutional neural network is used to directly establish a mapping relationship between the measured potential value and the resistance value and temperature value to obtain an exact solution.

[0084] The above is a detailed introduction to a two-dimensional resistive sensor array suitable for measurement in a high temperature environment proposed by the present invention, and the principles and implementation methods of the present invention are explained. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A two-dimensional resistive sensor array suitable for measurement in a high temperature environment, characterized in that: The two-dimensional resistance sensor array comprises a substrate (1), an array circuit (2), a terminal circuit (3) and an insulating protection layer (4); The substrate (1) is used to carry the array circuit (2) and the terminal circuit (3), and is isolated from the substrate (1); the substrate (1) is also provided with a substrate insulating through hole (10) for connecting the circuits on both sides; The array circuit (2) comprises a front sensor array and a back terminal circuit (3), which are respectively used for realizing sensor functions and connecting with an external drive collection system. The insulating protection layer (4) is used for packaging and insulating the entire sensor array.

2. The sensor array according to claim 1, characterized in that: The substrate (1) is an insulating material, and the non-insulating material is provided with a substrate insulating layer (11) on the front and back surfaces. The front sensor array comprises a transverse wire (5), a longitudinal wire (7), a sensor unit (6) and a node insulation layer (8); The transverse wire (5) and the sensor unit (6) are the bottom layer, which are directly arranged on the substrate surface insulating layer (11), and are isolated by a node insulating layer (8) in the middle. The node insulating layer (8) is used to insulate the intersection of the transverse wire (5) and the longitudinal wire (7); The longitudinal wire (7) is the top layer and is arranged on the node insulation layer (8). The node insulation layer through hole (9) arranged on the node insulation layer (8) is used to achieve connection with the sensor unit (6).

3. The sensor array according to claim 2, characterized in that: The transverse wires (5) and the longitudinal wires (7) are both strip-shaped wire circuits. The transverse wires (5) and the longitudinal wires (7) form a cross-lattice structure. The sensor unit (6) is arranged in the square grid area. The sensor unit (6) is a double-electrode sensor, one end of which is connected to the adjacent transverse wire (5) and the other end of which is connected to the adjacent longitudinal wire (7) through a blank space reserved by a node insulation layer (8).

4. The sensor array according to claim 3, characterized in that: The two ends of the transverse guide (5) and the longitudinal conductor (7) extend to the position of the substrate insulating through hole (10), the back wiring terminal circuit (3) is connected to the front sensor array through the substrate insulating through hole (10), and is provided with a wiring electrode (12) connected to the outside for inputting an external driving signal and outputting a measurement signal.

5. The sensor array according to claim 4, characterized in that: In the sensor array, the circuit and the sensor unit (6) are both thick film or thin film structures. For thick film circuits, the thickness of a single layer circuit structure is less than 10 μm; for thin film circuits, the thickness is less than 1 μm. The width of the transverse wire (5) and the longitudinal wire (7) is between 0.5 and 5 mm, and the sensor unit (6) is a serpentine structure with a width between 10 μm and 0.5 mm.

6. A method for preparing a two-dimensional resistive sensor array suitable for measuring in a high temperature environment according to any one of claims 1 to 5, characterized in that: The method comprises the following steps: Step 1, opening a substrate insulating through hole (10) on the substrate (1); if the substrate is a non-insulating material, it is necessary to prepare a substrate insulating layer (11) on both sides of the substrate; Step 2, arranging a transverse wire (5) and a resistance-type sensor (6) on the front surface of the substrate (1); Step 3, a node insulating layer (8) is provided on the upper layer of the transverse wire (5) and the resistance type sensor (6); Step 4, arranging a longitudinal conductor (7) on the upper layer of the node insulation layer (8); Step 5, setting a terminal circuit (3) on the back surface of the substrate (1), and filling the substrate insulating through hole (9) with a conductive material to connect the circuits on both sides; Step 6: Arrange an insulating protective layer (4) on the front side of the substrate (1) to complete the sensor packaging.

7. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to claim 6 are implemented.

8. A computer-readable storage medium for storing computer instructions, characterized in that: When the computer instructions are executed by a processor, the steps of the method described in claim 6 are implemented.

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