Infrared characteristic response photomultiplier

Abstract

The invention discloses a photomultiplier tube with infrared characteristic response. The photomultiplier comprises a lens system (1), an infrared characteristic response photocathode (2), an electron multiplication system (3), an anode receiving plate (4), a shell (5), an electrode wire and a bias voltage source. The shell (5) is provided with an opening, and the lens system (1) is arranged at the opening to form vacuum; the infrared characteristic response photocathode (2), the electron multiplication system (3) and the anode receiving plate (4) are all arranged in the shell (5); a micro-nano structure is arranged on the surface of the infrared characteristic response photocathode (2), and the micro-nano structure has plasmon characteristics; the lens system (1) is used for focusing infrared light and transmitting the focused infrared light to the micro-nano structure of the infrared characteristic response photocathode (2); the infrared characteristic response photocathode (2) is used for generating photoelectrons and emitting the photoelectrons to the electron multiplication system (3); the electron multiplication system (3) is used for receiving the photoelectrons and generating multiplication electrons; the anode receiving plate (4) is used for collecting the proliferative electrons and generating anode current; an electrode wire penetrates through the shell (5), one end of the electrode wire is connected with the infrared characteristic response photocathode (2) and the electron multiplication system (3), and the other end of the electrode wire is connected with a bias voltage source. The photomultiplier tube can effectively respond to the wave band of infrared light.

Description

Technical Field

[0001] The invention relates to the field of vacuum photoelectric detection, and more specifically to a photomultiplier tube with infrared characteristic response. Background Art

[0002] In recent years, the demand for photoelectric detection of weak light signals in infrared characteristic bands has been growing in many fields such as aerospace, biomedicine, industrial production, environmental testing, and scientific research. For example, in the biomedical field, hemoglobin has a characteristic absorption peak near 1 micron, and fat cells have a characteristic peak at 2.1 microns due to NH and CH stretching vibrations; in the field of environmental testing, carbon monoxide has obvious absorption at 2.3 microns.

[0003] Photomultiplier tubes are key devices that convert weak light signals into amplified electrical signals. Photomultiplier tubes are mainly composed of photocathode, multiplier electrode and anode substrate. The response band of traditional photomultiplier tubes is still mainly concentrated in the ultraviolet and visible light ranges, and cannot effectively respond to the infrared light band.

[0004] The prior art discloses a photomultiplier tube. The photomultiplier tube has a cathode that releases electrons by incident light; a multistage dynode that releases electrons from the cathode; and an electrode formed by an electron lens, which is arranged at a position separated by a predetermined distance from the edge of the first dynode and the edge of the second dynode, wherein the first dynode is located at the first stage starting from the cathode, and the second dynode is located at the second stage starting from the cathode, and in the length direction of the first dynode, the equipotential surface in the space between the first dynode and the second dynode is flattened. The photomultiplier tube cannot effectively respond to the wavelength band of infrared light. Summary of the invention

[0005] The present invention aims at the defect that the prior art cannot effectively respond to the wavelength band of infrared light, and provides a photomultiplier tube with infrared characteristic response, which can effectively respond to the wavelength band of infrared light.

[0006] The primary purpose of the present invention is to solve the above technical problems. The technical solution of the present invention is as follows:

[0007] A photomultiplier tube with infrared characteristic response, characterized in that it comprises: a lens system, an infrared characteristic response photocathode, an electron multiplication system, an anode receiving plate, a housing, an electrode line and a bias voltage source;

[0008] The housing is provided with an opening, and the lens system is arranged at the opening to form a vacuum;

[0009] The infrared characteristic response photocathode, the electron multiplication system, and the anode receiving plate are all arranged inside the housing;

[0010] The infrared characteristic response photocathode surface is provided with a micro-nano structure, and the micro-nano structure has plasmon characteristics;

[0011] The lens system is used to focus the infrared light and emit the focused infrared light to the micro-nano structure of the infrared characteristic response photocathode;

[0012] The infrared characteristic response photocathode is used to generate photoelectrons and emit the photoelectrons to the electron multiplication system;

[0013] The electron multiplication system is used to receive photoelectrons and generate multiplied electrons;

[0014] The anode receiving plate is used to collect the multiplied electrons to generate anode current;

[0015] The electrode wire passes through the shell, one end of the electrode wire is respectively connected to the infrared characteristic response photocathode and the electron multiplication system, and the other end of the electrode wire is connected to the bias voltage source.

[0016] Furthermore, the infrared characteristic response photocathode has at least one tip, the tip faces the electron multiplication system, and the photoelectrons are emitted from the tip to the electron multiplication system.

[0017] Furthermore, the micro-nano structure is a combination of any one or more of a rectangular grating, a blazed grating, and a two-dimensional photonic crystal periodic structure.

[0018] Furthermore, it also includes a cathode base, which is arranged on the inner wall of the shell, the end of the infrared characteristic response photocathode away from the electron multiplication system is connected to the cathode base, and one end of the electrode line is connected to the cathode base.

[0019] Furthermore, the material of the infrared characteristic response photocathode is any one or more combinations of refractory metals and their oxides having plasmon properties.

[0020] Furthermore, the electron multiplying system includes a plurality of electron multiplying substrates, which are arranged in an alternating manner; each of the electron multiplying substrates is connected to a bias voltage source via an electrode line, and photoelectrons are accelerated and multiplied by multiple reflections in the plurality of electron multiplying substrates.

[0021] Furthermore, the electron multiplying substrate is connected to an external bias voltage through an electrode line, and the electron multiplying substrate is any one or more of a microchannel plate, a semiconductor diode, a semiconductor avalanche diode, and an electron multiplier.

[0022] Furthermore, the surface of the electron multiplying substrate is coated with a material that can generate secondary electron emission.

[0023] Furthermore, the lens system comprises a glass lens.

[0024] Furthermore, the surface of the glass lens has a filter layer.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] The present invention effectively responds to the wavelength band of infrared light by arranging an infrared characteristic response photocathode and arranging a micro-nano structure on the surface of the infrared characteristic response photocathode. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 1.

[0028] Figure 2 A side view of a photomultiplier tube with infrared characteristic response provided in Example 1.

[0029] Figure 3 A front view of a conical infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0030] Figure 4 A top view of the conical infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0031] Figure 5 A side view of a conical infrared characteristic response photocathode with a rectangular grating provided for Example 1.

[0032] Figure 6 A front view of the pyramidal infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0033] Figure 7 A top view of the pyramidal infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0034] Figure 8 A side view of a pyramidal infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0035] Fig. 9 A front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids with a rectangular grating.

[0036] Fig.10 A top view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids having a rectangular grating.

[0037] Fig.11 A side view of the infrared characteristic response photocathode having a combination of prisms and pyramids with a rectangular grating provided in Example 1.

[0038] Fig.12 A front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of a cylinder and a cone and has a rectangular grating.

[0039] Fig.13 A top view of the infrared characteristic response photocathode of the combination of a cylinder and a cone with a rectangular grating provided in Example 1.

[0040] Fig.14 A side view of the infrared characteristic response photocathode of the combination of a cylinder and a cone with a rectangular grating provided in Example 1.

[0041] Fig.15 A front view of the conical infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0042] Fig.16 A top view of the conical infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0043] Fig.17 A side view of a conical infrared characteristic response photocathode with a blazed grating provided for Example 1.

[0044] Fig.18 A front view of the pyramidal infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0045] Fig.19 A top view of the pyramidal infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0046] Fig. 20 A side view of the pyramidal infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0047] Fig.21 A front view of the infrared characteristic response photocathode having a combination of prisms and pyramids with a blazed grating provided in Example 1.

[0048] Fig. 22 A top view of the infrared characteristic response photocathode having a combination of prisms and pyramids with a blazed grating provided in Example 1.

[0049] Fig.23 A side view of the infrared characteristic response photocathode having a combination of prisms and pyramids with a blazed grating provided in Example 1.

[0050] Fig.24 A front view of the infrared characteristic response photocathode of the combination of a cylinder and a cone with a blazed grating provided in Example 1.

[0051] Fig.25A top view of the infrared characteristic response photocathode of the combination of a cylinder and a cone with a blazed grating provided in Example 1.

[0052] Fig.26 A side view of the infrared characteristic response photocathode of the combination of a cylinder and a cone with a blazed grating provided in Example 1.

[0053] Fig. 27 This is a front view of the conical infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0054] Fig.28 A top view of the cone-shaped infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0055] Fig.29 A side view of the cone-shaped infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0056] Fig.30 This is a front view of the pyramid infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0057] Fig.31 A top view of the pyramid infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0058] Fig.32 A side view of the pyramid infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0059] Fig.33 This is a front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids with a two-dimensional photonic crystal periodic structure.

[0060] Fig.34 A top view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids having a two-dimensional photonic crystal periodic structure.

[0061] Fig.35 A side view of the infrared characteristic response photocathode having a two-dimensional photonic crystal periodic structure and a combination of prisms and pyramids provided in Example 1.

[0062] Fig.36 A front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of a cylinder and a cone and has a two-dimensional photonic crystal periodic structure.

[0063] Fig.37A top view of the infrared characteristic response photocathode provided in Example 1 having a two-dimensional photonic crystal periodic structure of a combination of cylinders and cones.

[0064] Fig.38 A side view of the infrared characteristic response photocathode provided in Example 1 having a two-dimensional photonic crystal periodic structure of a combination of cylinders and cones.

[0065] Fig.39 An electron microscope image of the infrared characteristic response photocathode of the combination of a cylinder and a cone provided in Example 1.

[0066] Fig.40 This is an electron microscope image of the photocathode material grown on a sapphire substrate provided in Example 1.

[0067] Fig.41 This is an electron microscope image of the photocathode with infrared characteristic response provided in Example 1.

[0068] Fig.42 This is an electron microscope image of the front end of the tungsten needle cathode base provided in Example 1.

[0069] Fig.43 This is an electron microscope image of metal platinum deposited near the contact point provided in Example 1.

[0070] Fig.44 This is an electron microscope image of the photocathode 2 with infrared characteristic response provided in Example 1.

[0071] Fig.45 This is an electron microscope image of the grating structure of the infrared characteristic response photocathode 2 provided in Example 1.

[0072] Fig.46 This is a line graph of the volt-ampere characteristic curve provided in Example 1 under different light intensities.

[0073] Fig.47 This is the infrared characteristic response characteristic diagram provided for Example 1.

[0074] Fig.48 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 2.

[0075] Fig.49 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 3.

[0076] Fig.50 A side view of a photomultiplier tube with infrared characteristic response provided in Example 3.

[0077] Fig.51 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 4.

[0078] Fig.52 A side view of a photomultiplier tube with infrared characteristic response provided in Example 4.

[0079] Fig.53 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 5.

[0080] Fig.54 A side view of a photomultiplier tube with infrared characteristic response provided in Example 5.

[0081] Fig.55 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 6.

[0082] Fig.56 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 7.

[0083] Fig.57 A side view of a photomultiplier tube with infrared characteristic response provided in Example 7.

[0084] Fig.58 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 8.

[0085] Fig.59 A side view of a photomultiplier tube with infrared characteristic response provided in Example 8. DETAILED DESCRIPTION

[0086] The drawings are for illustrative purposes only and should not be construed as limiting the present patent;

[0087] In order to better illustrate the present embodiment, some parts in the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product;

[0088] It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.

[0089] The technical solution of the present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0090] Example 1

[0091] like Figure 1 , Figure 2 As shown, a photomultiplier tube with infrared characteristic response is characterized in that it includes: a lens system 1, an infrared characteristic response photocathode 2, an electron multiplication system 3, an anode receiving plate 4, a housing 5, an electrode line and a bias voltage source;

[0092] The housing 5 is provided with an opening, and the lens system 1 is arranged at the opening to form a vacuum;

[0093] The infrared characteristic response photocathode 2, the electron multiplication system 3, and the anode receiving plate 4 are all arranged inside the housing;

[0094] The surface of the infrared characteristic response photocathode 2 is provided with a micro-nano structure, and the micro-nano structure has plasmon characteristics;

[0095] The lens system 1 is used to focus the infrared light and emit the focused infrared light to the micro-nano structure of the infrared characteristic response photocathode 2;

[0096] The infrared characteristic response photocathode 2 is used to generate photoelectrons and emit the photoelectrons to the electron multiplication system 3;

[0097] The electron multiplication system 3 is used to receive photoelectrons and generate multiplied electrons;

[0098] The anode receiving plate 4 is used to collect the multiplied electrons to generate anode current;

[0099] The electrode wire passes through the housing 5 , one end of the electrode wire is connected to the infrared characteristic response photocathode 2 and the electron multiplication system 3 respectively, and the other end of the electrode wire is connected to the bias voltage source.

[0100] In a specific embodiment, after the shell 5 is exhausted and vacuum packaged, the vacuum degree is 10 -5 ~10 -4 Order of magnitude.

[0101] It should be noted that by introducing plasmon properties, flexible regulation of the light response of electron emission in a specific infrared light band can be achieved. The photon absorption enhancement characteristics of plasmons can improve the absorption efficiency of the material for incident photons, significantly reduce the excitation threshold of the photocathode, and make it easier for photon energy to excite electrons, thereby improving the photoelectric conversion efficiency. In addition, plasmons also have local electric field resonance enhancement characteristics, which can significantly enhance the light response within a specific frequency range. By designing a resonant structure that matches the photocathode material, selective enhancement and regulation of infrared light of a specific wavelength can be achieved, so that the photocathode has a higher photoelectric response at these characteristic frequencies. By utilizing plasmon properties, the response spectrum of the photocathode can be expanded, so that it can effectively respond to photons of specific wavelengths in the infrared band, and achieve sensitive detection of the infrared spectrum.

[0102] It should be noted that using bias voltage to increase the external electric field can not only reduce the equivalent work function of the emitter, but also when the electric field strength reaches a certain level, obvious tunnel electron emission will occur, thereby enhancing the electron emission ability of the cathode material and significantly reducing the requirements for the frequency and power of the detection light.

[0103] Furthermore, the infrared characteristic response photocathode 2 has at least one tip, the tip faces the electron multiplying system 3, and the photoelectrons are emitted from the tip to the electron multiplying system 3.

[0104] Furthermore, the micro-nano structure is a combination of any one or more of a rectangular grating, a blazed grating, and a two-dimensional photonic crystal periodic structure.

[0105] Furthermore, it also includes a cathode base, which is arranged on the inner wall of the shell, and one end of the infrared characteristic response photocathode 2 away from the electron multiplication system 3 is connected to the cathode base, and one end of the electrode line is connected to the cathode base.

[0106] Furthermore, the material of the infrared characteristic response photocathode 2 is any one or more combinations of refractory metals and their oxides having plasmon properties.

[0107] It should be noted that the use of high melting point metals such as tungsten and molybdenum and their oxides as photocathode materials for photomultiplier tubes has good physical and chemical stability at high temperatures, high laser damage threshold and high electric field breakdown threshold, which can significantly increase the damage resistance of the device.

[0108] It should be noted that, under the action of an external bias voltage, the potential barrier at the tip of the micron-cone photocathode material of the infrared characteristic response photocathode 2 is bent, and the electrons at the tip are in a critical state of escaping from the metal molybdenum micron-cone tip.

[0109] In a specific embodiment, the infrared characteristic response photocathode 2 is made of a single single crystal metal molybdenum micron cone photocathode material. The tip of the micron cone photocathode material faces the electron multiplication system and is on the same horizontal plane as the electron multiplication system. There is an artificially prepared one-dimensional grating structure on the surface of the micron cone photocathode material. The grating structure and the lens system 1 are located on the same vertical plane and are used to receive the focused infrared light. The tail end of the micron cone photocathode material is welded to the tungsten needle cathode base and connected to the external bias voltage through an electrode line. Under the coupling of infrared light and the artificially prepared one-dimensional grating, the infrared characteristic response photocathode 2 induces surface plasmon polariton resonance, and the electrons on the metal molybdenum surface produce collective oscillations and gain kinetic energy. The cone tip electrons in the critical state escape from the surface of the metal photocathode material to form photogenerated electrons.

[0110] Furthermore, the electron multiplying system 3 includes a plurality of electron multiplying substrates, which are arranged in an alternating manner; each of the electron multiplying substrates is connected to a bias voltage source via an electrode line, and photoelectrons are accelerated and multiplied by multiple reflections in the plurality of electron multiplying substrates.

[0111] Furthermore, the electron multiplying substrate is connected to an external bias voltage through an electrode line, and the electron multiplying substrate is any one or more of a microchannel plate, a semiconductor diode, a semiconductor avalanche diode, and an electron multiplier.

[0112] Furthermore, the surface of the electron multiplying substrate is coated with a material that can generate secondary electron emission.

[0113] It should be noted that one end of the electron multiplication system faces the infrared characteristic response photocathode to receive photogenerated electrons, and the other end faces the anode receiving plate to output multiplied electrons. The bias voltage forms an accelerating electric field between each two electron multiplication substrates, which accelerates and multiplies the photogenerated electrons escaping from the surface of the infrared characteristic response photocathode, generating a large number of multiplied electrons.

[0114] Furthermore, the lens system 1 includes a glass lens.

[0115] Furthermore, the surface of the glass lens has a filter layer.

[0116] In a specific embodiment, the infrared characteristic response photocathode 2 is a combination of any one or more of a cylinder, a prism, a cone, and a pyramid. The infrared characteristic response photocathode 2 at least combines a cone or a pyramid to realize at least one pointed structure.

[0117] In a specific embodiment, the conical infrared characteristic response photocathode 2 having a rectangular grating is as follows: Figure 3 , Figure 4 , Figure 5 As shown, the pyramid infrared characteristic response photocathode 2 with rectangular grating is as shown in FIG. Figure 6 , Figure 7 , Figure 8 As shown, the infrared characteristic response photocathode 2 having a combination of a prism and a pyramid with a rectangular grating is as shown in FIG. Fig. 9 , Fig.10 , Fig.11 As shown, the infrared characteristic response photocathode 2 having a combination of a cylindrical and a cone with a rectangular grating is as shown in FIG. Fig.12 , Fig.13 , Fig.14 shown.

[0118] In a specific embodiment, the conical infrared characteristic response photocathode 2 with a blazed grating is as follows: Fig.15 , Fig.16 , Fig.17 As shown, the infrared characteristic response photocathode 2 of the pyramid with the blazed grating is as follows Fig.18 , Fig.19 , Fig. 20 As shown, the infrared characteristic response photocathode 2 having a combination of a prism and a pyramid with a blazed grating is as shown in FIG. Fig.21 , Fig. 22, Fig.23 As shown, the infrared characteristic response photocathode 2 having a combination of a cylinder and a cone with a blazed grating is as follows Fig.24 , Fig.25 , Fig.26 shown.

[0119] In a specific embodiment, the cone infrared characteristic response photocathode 2 having a two-dimensional photonic crystal periodic structure is as follows: Fig. 27 , Fig.28 , Fig.29 As shown, the infrared characteristic response photocathode 2 of the pyramid with a two-dimensional photonic crystal periodic structure is as follows Fig.30 , Fig.31 , Fig.32 As shown, the infrared characteristic response photocathode 2 having a two-dimensional photonic crystal periodic structure of a prism and a pyramid is combined as shown in FIG. Fig.33 , Fig.34 , Fig.35 As shown, the infrared characteristic response photocathode 2 having a two-dimensional photonic crystal periodic structure of a cylinder and a cone is combined. Fig.36 , Fig.37 , Fig.38 shown.

[0120] The infrared characteristic response of the combination of cylinder and cone is shown in Figure 2. Fig.39 shown.

[0121] In a specific embodiment, a method for manufacturing a photocathode with infrared characteristic response includes:

[0122] S1: Fig.40 As shown, a photocathode material is grown on a sapphire substrate;

[0123] S2: Fig.41 As shown, the photocathode material is selected and picked up using a nanomanipulator and welded on a tungsten needle cathode base to form a photocathode 2 with infrared characteristic response;

[0124] S3: Fig.42 As shown, the front end of the tungsten needle cathode base is milled to form a horizontal stage using focused ion beam etching technology, and the rear end of the tungsten needle cathode base is connected to the electrode wire and an external bias voltage.

[0125] S4: Fig.43 As shown, the nanomanipulator drives the infrared characteristic response photocathode 2 to move to the horizontal stage of the tungsten needle tip cathode base; at the same time, metal platinum is deposited near the contact point through the gas deposition system;

[0126] S5: Fig.44As shown, at the connection between the infrared characteristic response photocathode 2 and the horizontal stage of the tungsten needle tip cathode base, metal platinum atoms are deposited to fix the infrared characteristic response photocathode 2;

[0127] S6: Fig.45 As shown, the grating structure of the photocathode 2 with infrared characteristic response is prepared by a focused ion beam etching system.

[0128] In a specific embodiment, the grating period of step S6 is 1.48 micrometers, and the groove gap is 400 nanometers, so as to efficiently absorb 1.55 micrometer infrared.

[0129] The volt-ampere characteristic curves of the present invention under different light intensities are as follows: Fig.46 As shown. When the light intensity is 0, there is no current response. As the light intensity increases to 30.03W / cm 2 When the current response begins, the light intensity continues to increase to 34.87W / cm 2 , the current response characteristics are significantly enhanced.

[0130] The infrared characteristic response characteristics of the present invention are as follows Fig.47 As shown. At 1.55 microns, the local field strength is the strongest and the energy decays the slowest. By setting a specific artificial microstructure, directional selection of infrared light can be achieved.

[0131] Example 2

[0132] Based on the photomultiplier tube with infrared characteristic response described in Example 1, that is, this embodiment uses the same photomultiplier tube with infrared characteristic response as Example 1. Fig.48 As shown, the micro-nano structure is a blazed grating. The housing 5 is a prism.

[0133] Example 3

[0134] Based on the photomultiplier tube with infrared characteristic response described in Example 1, that is, this embodiment uses the same photomultiplier tube with infrared characteristic response as Example 1. Fig.49 , Fig.50 As shown, the housing 5 is a cylinder.

[0135] Example 4

[0136] Based on the photomultiplier tube with infrared characteristic response described in Example 1, that is, this embodiment uses the same photomultiplier tube with infrared characteristic response as Example 1. Fig.51 , Fig.52 As shown, the housing 5 is an ellipsoid.

[0137] Example 5

[0138] Based on the photomultiplier tube with infrared characteristic response described in Example 1, that is, this embodiment uses the same photomultiplier tube with infrared characteristic response as Example 1. Fig.53 , Fig.54 As shown, the lens system 1 includes a reflector, and the infrared light focused by the glass lens is reflected by the reflector to the micro-nano structure of the infrared characteristic response photocathode 2.

[0139] Example 6

[0140] Based on the photomultiplier tube with infrared characteristic response described in Example 5, that is, this embodiment adopts the same photomultiplier tube with infrared characteristic response as Example 5. Fig.55 As shown, the micro-nano structure is a blazed grating. The housing 5 is a prism.

[0141] Example 7

[0142] Based on the photomultiplier tube with infrared characteristic response described in Example 5, that is, this embodiment adopts the same photomultiplier tube with infrared characteristic response as Example 5. Fig.56 , Fig.57 As shown, the housing 5 is a cylinder.

[0143] Example 8

[0144] Based on the photomultiplier tube with infrared characteristic response described in Example 5, that is, this embodiment adopts the same photomultiplier tube with infrared characteristic response as Example 5. Fig.58 , Fig.59 As shown, the housing 5 is an ellipsoid.

[0145] The same or similar reference numerals correspond to the same or similar components;

[0146] The terms used in the drawings to describe positional relationships are only used for illustrative purposes and should not be construed as limiting this patent;

[0147] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A photomultiplier tube with infrared characteristic response, characterized in that: include: A lens system (1), an infrared characteristic response photocathode (2), an electron multiplication system (3), an anode receiving plate (4), a housing (5), an electrode line and a bias voltage source; The housing (5) is provided with an opening, and the lens system (1) is arranged at the opening to form a vacuum; The infrared characteristic response photocathode (2), the electron multiplication system (3), and the anode receiving plate (4) are all arranged inside the housing; The surface of the infrared characteristic response photocathode (2) is provided with a micro-nano structure, and the micro-nano structure has plasmon characteristics; The lens system (1) is used to focus infrared light and emit the focused infrared light onto the micro-nano structure of the infrared characteristic response photocathode (2); The infrared characteristic response photocathode (2) is used to generate photoelectrons and emit the photoelectrons to the electron multiplication system (3); The electron multiplication system (3) is used to receive photoelectrons and generate multiplied electrons; The anode receiving plate (4) is used to collect the multiplied electrons to generate an anode current; The electrode wire passes through the housing (5), one end of the electrode wire is respectively connected to the infrared characteristic response photocathode (2) and the electron multiplication system (3), and the other end of the electrode wire is connected to a bias voltage source.

2. A photomultiplier tube with infrared characteristic response according to claim 1, characterized in that: The infrared characteristic response photocathode (2) has at least one tip, the tip is directed toward the electron multiplying system (3), and the photoelectrons are emitted from the tip to the electron multiplying system (3).

3. A photomultiplier tube with infrared characteristic response according to claim 1, characterized in that: The micro-nano structure is a combination of any one or more of a rectangular grating, a blazed grating, and a two-dimensional photonic crystal periodic structure.

4. A photomultiplier tube with infrared characteristic response according to claim 1, characterized in that: It also includes a cathode base, which is arranged on the inner wall of the shell, one end of the infrared characteristic response photocathode (2) away from the electron multiplication system (3) is connected to the cathode base, and one end of the electrode line is connected to the cathode base.

5. A photomultiplier tube with infrared characteristic response according to claim 4, characterized in that: The material of the infrared characteristic response photocathode (2) is any one or more combinations of refractory metals and their oxides having plasmon properties.

6. A photomultiplier tube with infrared characteristic response according to claim 1, characterized in that: The electron multiplying system (3) comprises a plurality of electron multiplying substrates, which are arranged in a staggered manner; each of the electron multiplying substrates is connected to a bias voltage source via an electrode line, and photoelectrons are accelerated and multiplied by multiple reflections in the plurality of electron multiplying substrates.

7. A photomultiplier tube with infrared characteristic response according to claim 6, characterized in that: The electron multiplying substrate is connected to an external bias voltage through an electrode line, and the electron multiplying substrate is any one or more of a microchannel plate, a semiconductor diode, a semiconductor avalanche diode, and an electron multiplier.

8. A photomultiplier tube with infrared characteristic response according to claim 7, characterized in that: The surface of the electron multiplying substrate is coated with a material that can generate secondary electron emission.

9. The photomultiplier tube with infrared characteristic response according to claim 1, characterized in that: The lens system (1) comprises a glass lens.

10. A photomultiplier tube with infrared characteristic response according to claim 9, characterized in that: The surface of the glass lens is provided with a filter layer.

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