Near space application-oriented perovskite solar cell and preparation method thereof

Abstract

The invention discloses a near space application-oriented perovskite solar cell and a preparation method thereof. The near space application-oriented perovskite solar cell sequentially comprises a PI substrate, a first metallic TaN electrode, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a second metallic TaN electrode from bottom to top, when PI is a non-transparent substrate, a TaON passivation layer is arranged around the second metallic TaN electrode, anti-reflection layers are arranged on the second metallic TaN electrode and the TaON passivation layer, and at the moment, the thickness of the second metallic TaN electrode is smaller than 5 nm; when PI is a transparent substrate, a TaON passivation layer is arranged around the first metallic TaN electrode, an anti-reflection layer is arranged among the PI substrate, the first metallic TaN electrode and the TaON passivation layer, and at the moment, the thickness of the first metallic TaN electrode is smaller than 5 nm. The invention provides a high-stability perovskite battery for near space application.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a perovskite solar cell for near-space applications. Background Art

[0002] Perovskite solar cells have attracted widespread attention due to their high power density, low cost, and high photoelectric conversion efficiency. In near-space, where there is no obstruction, perovskite solar cells can fully absorb solar radiation and convert it into electricity, thereby providing power support for aircraft such as airships.

[0003] However, compared with ground conditions, perovskite solar cells in near-space need to withstand strong ultraviolet radiation and wide temperature fluctuations (-100 to 100°C). During the flight of aircraft such as airships from the ground to near-space, the cells will also be subjected to varying degrees of stress. Currently, researchers mainly use conventional substrates such as PEN and PET to prepare perovskite solar cells in near-space, and sputter transparent ITO electrodes on their surfaces before depositing subsequent transport layers and perovskite films. However, conventional PET and PEN substrates have a narrow operating temperature range, poor heat resistance, and poor mechanical properties. In near-space, the substrates are prone to cracking, which leads to battery failure and ultimately affects the overall performance of the battery. In addition, the ITO on the surface of the substrate is relatively brittle and easily cracks or breaks under processing, bending or external force, which limits the flexibility and stability of the device. In addition, the resistance of the ITO electrode changes with temperature, which may affect the overall performance of the battery, especially in extreme environments such as near-space.

[0004] Existing perovskite solar cell technology has yet to meet the stringent requirements of near-space environments, requiring further improvement in performance and reliability in practical applications. Furthermore, during the flight of aircraft like airships from the ground to near-space, perovskite solar cells are susceptible to moisture and oxygen, making moisture and oxygen resistance crucial considerations. Summary of the Invention

[0005] To address the aforementioned problems in the prior art, the present invention provides a perovskite solar cell for near-space applications. The technical problems to be solved by the present invention are achieved through the following technical solutions:

[0006] In a first aspect, an embodiment of the present invention provides a perovskite solar cell for near-space applications, wherein the perovskite solar cell comprises, from bottom to top, a PI substrate, a first metallic TaN electrode, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a second metallic TaN electrode; wherein:

[0007] When the PI substrate is an opaque substrate, a TaON passivation layer is provided around the second metallic TaN electrode, and an anti-reflection layer is provided on the second metallic TaN electrode and the TaON passivation layer. In this case, the thickness of the first metallic TaN electrode is required to be greater than 50 nm, and the thickness of the second metallic TaN electrode is required to be less than 5 nm. The TaON passivation layer is obtained by in-situ oxidation of a portion of the second metallic TaN electrode.

[0008] When the PI substrate is a transparent substrate, a TaON passivation layer is arranged around the first metallic TaN electrode, and an anti-reflection layer is arranged between the PI substrate, the first metallic TaN electrode and the TaON passivation layer. At this time, the thickness of the first metallic TaN electrode is required to be less than 5nm, and the thickness of the second metallic TaN electrode is required to be greater than 50nm; wherein, the TaON passivation layer is obtained by in-situ oxidation of part of the first metallic TaN electrode.

[0009] In one embodiment of the present invention,

[0010] When the PI substrate is an opaque substrate, the thickness of the first metallic TaN electrode is 50 nm to 100 nm, and the thickness of the second metallic TaN electrode is 2 nm to 5 nm;

[0011] When the PI substrate is a transparent substrate, the thickness of the first metallic TaN electrode is 2 nm to 5 nm, and the thickness of the second metallic TaN electrode is 50 nm to 100 nm.

[0012] In one embodiment of the present invention, the thickness of the TaON passivation layer is 2 nm to 5 nm.

[0013] In a second aspect, an embodiment of the present invention provides a method for preparing a perovskite solar cell for near-space applications, the method comprising:

[0014] Selecting an opaque PI substrate and pre-treating the PI substrate;

[0015] Preparing a first metallic TaN electrode on the pretreated PI substrate; wherein the thickness of the first metallic TaN electrode is greater than 50 nm;

[0016] Preparing a hole transport layer on the first metallic TaN electrode;

[0017] preparing a perovskite light absorbing layer on the hole transport layer;

[0018] preparing an electron transport layer on the perovskite light absorbing layer;

[0019] Preparing a second metallic TaN electrode on the electron transport layer; wherein the thickness of the second metallic TaN electrode is less than 5 nm;

[0020] In-situ oxidizing a portion of the second metallic TaN electrode to form a TaON passivation layer surrounding the second metallic TaN electrode;

[0021] An anti-reflection layer is prepared on the second metallic TaN electrode and the TaON passivation layer.

[0022] In one embodiment of the present invention, a first metallic TaN electrode is prepared on a pretreated PI substrate, comprising:

[0023] A first metallic TaN electrode with a thickness of 50 nm to 100 nm is prepared on the pretreated PI substrate by using a magnetron reactive sputtering process;

[0024] Preparing a second metallic TaN electrode on the electron transport layer, comprising:

[0025] A second metallic TaN electrode with a thickness of 2nm to 5nm is prepared on the electron transport layer by adopting a magnetron reactive sputtering process.

[0026] In one embodiment of the present invention, in-situ oxidation of a portion of the second metallic TaN electrode to form a TaON passivation layer surrounding the second metallic TaN electrode comprises:

[0027] A plasma treatment process is adopted to in-situ oxidize a portion of the second metallic TaN electrode to prepare a TaON passivation layer with a thickness of 2 nm to 5 nm surrounding the second metallic TaN electrode.

[0028] In a third aspect, an embodiment of the present invention provides a method for preparing a perovskite solar cell for near-space applications, the method comprising:

[0029] Selecting a transparent PI substrate and pre-treating the PI substrate;

[0030] preparing an anti-reflection layer on the pretreated PI substrate;

[0031] Preparing a first metallic TaN electrode on the anti-reflection layer; wherein the thickness of the first metallic TaN electrode is less than 5 nm;

[0032] In-situ oxidizing a portion of the first metallic TaN electrode to form a TaON passivation layer surrounding the first metallic TaN electrode;

[0033] Preparing a hole transport layer on the TaON passivation layer and the first metallic TaN electrode;

[0034] preparing a perovskite light absorbing layer on the hole transport layer;

[0035] preparing an electron transport layer on the perovskite light absorbing layer;

[0036] A second metallic TaN electrode is prepared on the electron transport layer; wherein the thickness of the second metallic TaN electrode is greater than 50 nm.

[0037] In one embodiment of the present invention, a first metallic TaN electrode is prepared on the anti-reflection layer, comprising:

[0038] A first metallic TaN electrode having a thickness of 2 nm to 5 nm is prepared on the anti-reflection layer by a magnetron reactive sputtering process;

[0039] Preparing a second metallic TaN electrode on the electron transport layer, comprising:

[0040] A second metallic TaN electrode with a thickness of 50 nm to 100 nm is prepared on the electron transport layer by adopting a magnetron reactive sputtering process.

[0041] In one embodiment of the present invention,

[0042] In-situ oxidizing a portion of the first metallic TaN electrode to form a TaON passivation layer surrounding the first metallic TaN electrode, comprising:

[0043] A plasma treatment process is adopted to in-situ oxidize a portion of the first metallic TaN electrode to prepare a TaON passivation layer with a thickness of 2 nm to 5 nm surrounding the first metallic TaN electrode.

[0044] Beneficial effects of the present invention:

[0045] The perovskite solar cell for near-space applications proposed in the present invention uses a metallic TaN film as a conductive electrode and PI as a substrate. This combination serves as the foundation for the various functional layers, enabling the realization of a highly stable perovskite solar cell for near-space applications. Because the PI substrate exhibits improved high-temperature resistance (up to 400°C), corrosion resistance, UV resistance, and strong mechanical properties, the cell is less susceptible to cracking in near-space. The metallic TaN film, due to its higher mechanical hardness and corrosion resistance, is more resistant to breakage than brittle materials, reducing the risk of cracking under stress, thereby improving the stability and durability of the device. Furthermore, it has a higher melting point and good thermal stability, making it suitable for use in high-temperature and harsh environments. Furthermore, the metallic TaN electrode has a lower conductive resistance, which can improve the performance of the perovskite solar cell. TaN thin films are compatible with PI substrates and can be prepared through a variety of processes. The PI substrate has variable light transmittance, and TaN can also be used as a transparent or opaque conductive electrode. This allows the PI substrate and metallic TaN to be combined as a substrate for the preparation of various batteries, such as hybrid perovskite batteries, all-inorganic perovskite batteries, and large-area perovskite batteries, which have a broad application market. Furthermore, the substrate can be recycled and reused to produce new perovskite solar cells or used to manufacture other products, thereby achieving effective resource reuse and recycling, which helps reduce production costs. The TaON passivation layer of the present invention effectively prevents moisture and oxygen from penetrating into the perovskite material, thereby reducing the risk of material degradation and battery failure. By preventing the intrusion of moisture and oxygen, the TaON passivation layer can significantly extend the service life of the perovskite battery. In general, in response to the needs of near-space applications, the present invention innovatively combines a PI substrate with metallic TaN as a base, thereby improving the performance of the battery, enhancing the stability of the battery, and reducing the cost of the perovskite solar cell. The present invention obtains a TaON passivation layer by locally in-situ oxidation of the metallic TaN electrode, which not only isolates the influence of moisture and oxygen on the perovskite solar cell in design and application, but also simplifies the process steps, improves production efficiency, and reduces costs.

[0046] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 Schematic diagram of the structure of a perovskite solar cell for near-space applications provided by an embodiment of the present invention;

[0048] Figure 2 Schematic diagram of the structure of another perovskite solar cell for near-space applications provided by an embodiment of the present invention;

[0049] Figure 3This is a schematic structural diagram of another perovskite solar cell for near-space applications provided by an embodiment of the present invention;

[0050] Figure 4 The embodiment of the present invention provides Figure 2 and Figure 3 Schematic top view of the metallic TaN electrode;

[0051] Figure 5 The embodiment of the present invention provides Figure 2 Schematic diagram of a process for preparing a perovskite solar cell for near-space applications;

[0052] Figure 6 The embodiment of the present invention provides Figure 3 Schematic diagram of the process for preparing perovskite solar cells for near-space applications. DETAILED DESCRIPTION

[0053] The present invention will be further described in detail below with reference to specific examples, but the embodiments of the present invention are not limited thereto.

[0054] First, see Figure 1 An embodiment of the present invention provides a perovskite solar cell for near-space applications, which includes, from bottom to top, a PI substrate, a first metallic TaN electrode, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a second metallic TaN electrode.

[0055] The use of a PI substrate in the embodiments of the present invention avoids the problem of conventional PEN and PET substrates, which have low glass transition temperatures and, therefore, experience a certain degree of thermal expansion at the typical annealing temperatures required for cell fabrication. This impacts the perovskite layer and can lead to crack formation in the film. The use of a PI substrate is particularly essential for all-inorganic perovskite solar cells, which require higher annealing temperatures.

[0056] When the PI substrate is an opaque substrate, for example, a PI substrate with a thickness greater than 100 μm can be used as an opaque substrate. The transparency of the PI substrate is determined according to the actual situation, such as Figure 2 As shown, a TaON passivation layer is provided around the second metallic TaN electrode, and an anti-reflection layer is provided on the second metallic TaN electrode and the TaON passivation layer. In this case, the thickness of the first metallic TaN electrode is required to be greater than 50nm, which can be used as an opaque electrode, and the thickness of the second metallic TaN electrode is required to be less than 5nm, which can be used as a transparent electrode; wherein the TaON passivation layer is obtained by in-situ oxidation of part of the second metallic TaN electrode. Figure 2The structure shown is an inverted perovskite solar cell structure. Similar structural design can also be performed for a positive perovskite solar cell structure.

[0057] When the PI substrate is a transparent substrate, for example, a PI substrate with a thickness less than or equal to 100 μm is used as a transparent substrate. Figure 3 As shown, a TaON passivation layer is provided around the first metallic TaN electrode, and an anti-reflection layer is provided between the PI substrate and the first metallic TaN electrode and the TaON passivation layer. In this case, the thickness of the first metallic TaN electrode is required to be less than 5nm, which is used as a transparent electrode, and the thickness of the second metallic TaN electrode is required to be greater than 50nm, which is used as an opaque electrode. The TaON passivation layer is obtained by in-situ oxidation of part of the first metallic TaN electrode. Figure 3 The inverted perovskite solar cell structure shown is similarly designed for the positive perovskite solar cell structure.

[0058] In the embodiment of the present invention, when the PI substrate is an opaque substrate, the thickness of the first metallic TaN electrode is 50nm~100nm, and the thickness of the second metallic TaN electrode is 2nm~5nm; when the PI substrate is a transparent substrate, the thickness of the first metallic TaN electrode is 2nm~5nm, and the thickness of the second metallic TaN electrode is 50nm~100nm.

[0059] The material of the perovskite light absorbing layer in the embodiment of the present invention is not limited, for example, it can be Cs 0.05 FA 0.8 MA 0.15 PbI 2.25 Br 0.75 ; The thickness of the perovskite light-absorbing layer is 700nm~1.2μm.

[0060] In the embodiment of the present invention, whether Figure 2 The TaON passivation layer surrounding the second metallic TaN electrode is Figure 3 A TaON passivation layer surrounds the first metallic TaN electrode, and the thickness of the TaON passivation layer is 2nm to 5nm. Figure 2 The top view structure of the second metallic TaN electrode, Figure 3 The top view of the structure at the first metallic TaN electrode is as follows Figure 4 shown.

[0061] The hole transport layer of the embodiment of the present invention can be made of P-type semiconductor material, such as nickel oxide (NiO x ), cobalt oxide (CoO), etc.; the thickness of the hole transport layer is 20nm to 50nm.

[0062] In the embodiment of the present invention, the material of the electron transport layer can be an N-type semiconductor material, such as TiO2, SnO2, ZnO, C 60 One of the above; the thickness of the electron transport layer is 20nm to 40nm.

[0063] The anti-reflection layer of the embodiment of the present invention can be made of MgF2; the thickness of the anti-reflection layer is 30nm to 120nm. The main function of the anti-reflection layer is to reduce light reflection loss, thereby improving light absorption efficiency and further improving the photoelectric conversion efficiency of the battery.

[0064] In summary, the perovskite solar cell for near-space applications proposed in the embodiment of the present invention uses a metallic TaN film as a conductive electrode and PI as a substrate, and then uses this combination as a base for setting various functional layers, which can achieve high-stability perovskite solar cells for near-space applications. Because the PI substrate exhibits better high-temperature resistance (up to 400°C), corrosion resistance, UV resistance and strong mechanical properties, the battery is not easy to crack in near-space; the metallic TaN film has higher mechanical hardness and corrosion resistance, and is more resistant to cracking than brittle materials, reducing the risk of cracking under stress, thereby improving the stability and durability of the device. It also has a higher melting point and good thermal stability, making it suitable for use in high temperature and harsh environments, and the conductive resistance of the metallic TaN electrode is smaller, which can improve the performance of the perovskite solar cell. TaN thin film is compatible with PI substrate and can be prepared through a variety of processes. At the same time, the transmittance of PI substrate is variable, and TaN can also be used as a transparent or opaque conductive electrode, so that the combination of PI substrate and metallic TaN can be used as a substrate for the preparation of various batteries, such as hybrid perovskite batteries, all-inorganic perovskite batteries and large-area perovskite batteries, which have a broad application market. The substrate can be recycled and reused to produce new perovskite solar cells, or used to manufacture other products to achieve effective reuse and recycling of resources, which helps to reduce production costs. The TaON passivation layer of the embodiment of the present invention effectively prevents moisture and oxygen from penetrating into the perovskite material, thereby reducing the risk of material degradation and battery failure. By preventing the intrusion of moisture and oxygen, the TaON passivation layer can significantly extend the service life of the perovskite battery. In general, to meet the needs of near-space applications, the embodiments of the present invention innovatively combine a PI substrate with metallic TaN as a base, thereby improving the performance of the battery, enhancing the stability of the battery, and reducing the cost of the perovskite solar cell. The embodiments of the present invention obtain a TaON passivation layer by locally in-situ oxidation of the metallic TaN electrode, which not only isolates the influence of moisture and oxygen on the perovskite solar cell in design and application, but also simplifies the process steps, improves production efficiency, and reduces costs.

[0065] Second, see Figure 5 The present invention provides a method for preparing a perovskite solar cell for near-space applications, comprising the following steps:

[0066] S101 , selecting an opaque PI substrate and pre-treating the PI substrate.

[0067] In the embodiment of the present invention, the opaque PI substrate is ultrasonically cleaned using acetone, alcohol, and deionized water in sequence for 15 minutes, and then placed on a sample stage in a vacuum chamber after drying.

[0068] S102, preparing a first metallic TaN electrode on the pretreated PI substrate; wherein the thickness of the first metallic TaN electrode is greater than 50 nm.

[0069] The embodiment of the present invention adopts the magnetron reactive sputtering process to prepare the first metallic TaN electrode, specifically: first, the vacuum degree of the vacuum chamber is better than 10 -7 Pa, so that nitrogen and argon enter the vacuum chamber through the gas flowmeter, the argon flow rate is 50sccm~100sccm, the nitrogen flow rate is 10sccm~50sccm, the vacuum chamber temperature is set to 20℃~100℃, and the DC source power during sputtering is 100W~200W. Finally, a first metallic TaN electrode with a thickness greater than 50nm is prepared on the pretreated PI substrate, and more preferably, a first metallic TaN electrode with a thickness of 50nm~100nm is prepared on the pretreated PI substrate.

[0070] S103, preparing a hole transport layer on the first metallic TaN electrode.

[0071] The hole transport layer of the embodiment of the present invention can be made of P-type semiconductor material, such as nickel oxide (NiO x ), cobalt oxide (CoO) and other materials. Nickel oxide (NiO x ) as an example: using NiO x NiO is deposited on the target by magnetron reactive sputtering process x Membrane, growth pressure is 10 -4 Pa, high purity argon gas is introduced at a flow rate of 20 sccm to 30 sccm and a power of 50 W to 65 W, and a NiO layer with a thickness of 20 nm to 50 nm is prepared on the first metallic TaN electrode. x After sputtering, anneal at a temperature of 200°C to 250°C for 15 minutes to 30 minutes.

[0072] S104, preparing a perovskite light absorbing layer on the hole transport layer.

[0073] The material of the perovskite light absorbing layer in the embodiment of the present invention is not limited, for example, it can be Cs 0.05 FA0.8 MA 0.15 PbI 2.25 Br 0.75 To prepare Cs 0.05 FA 0.8 MA 0.15 PbI 2.25 Br 0.75 Taking the perovskite light-absorbing layer as an example: the concentration of Cs is 1.0M to 1.5M. 0.05 FA 0.8 MA 0.15 PbI 2.25 Br 0.75 The perovskite precursor solution is continuously stirred and dissolved for standby use; the perovskite precursor solution is spin-coated on the hole transport layer using a one-step spin coating method. The specific spin coating process is as follows: the front stage speed is 1500rpm~2000rpm, the duration is 5s, the rear stage speed is 5000rpm~6000rpm, the duration is 45s, 180μL~200μL of anti-solvent chlorobenzene is added dropwise at 12s~15s after the start of spin coating for extraction, and after spin coating is completed, it is annealed at an annealing temperature of 100℃~120℃ for 10min~20min to obtain a perovskite light absorbing layer.

[0074] S105. Prepare an electron transport layer on the perovskite light absorbing layer.

[0075] The material of the electron transport layer of the embodiment of the present invention can be an N-type semiconductor material, such as TiO2, SnO2, ZnO, C 60 One of them. 60 For example: a layer of C is deposited on the perovskite light absorbing layer using a thermal evaporation process. 60 , the vacuum degree of the vacuum chamber is better than 10 -4 Pa, the growth rate is The preparation of an electron transport layer with a thickness of 20nm to 40nm is completed.

[0076] S106. Prepare a second metallic TaN electrode on the electron transport layer; wherein the thickness of the second metallic TaN electrode is less than 5 nm.

[0077] The embodiment of the present invention adopts the magnetron reactive sputtering process to prepare the second metallic TaN electrode, specifically: first, the vacuum degree of the vacuum chamber is better than 10 -7Pa, so that nitrogen and argon enter the vacuum chamber through the gas flowmeter, the argon flow rate is 50sccm~100sccm, the nitrogen flow rate is 10sccm~50sccm, the vacuum chamber temperature is set to 20℃~100℃, and the DC source power during sputtering is 100W~200W. Finally, a second metallic TaN electrode with a thickness of less than 5nm is prepared on the electron transport layer, and more preferably, a second metallic TaN electrode with a thickness of 2nm~5nm is prepared on the electron transport layer.

[0078] S107 , in-situ oxidizing a portion of the second metallic TaN electrode to prepare a TaON passivation layer surrounding the second metallic TaN electrode.

[0079] An embodiment of the present invention provides a solution that uses a plasma treatment process to in-situ oxidize a portion of the second metallic TaN electrode to form a TaON passivation layer with a thickness of 2nm to 5nm surrounding the second metallic TaN electrode. More specifically, the plasma treatment generates nitrogen plasma in a specific area and simultaneously introduces oxygen or an oxidant. The active oxygen species in the plasma react with the nitride, promoting localized in-situ oxidation to form a TaON passivation layer with a thickness of 2nm to 5nm surrounding the second metallic TaN electrode.

[0080] The embodiment of the present invention can also use other processes, such as thermal oxidation process, to prepare the TaON passivation layer. It can be seen that the solution of directly forming a TaON passivation layer by locally in-situ oxidation of the second metallic TaN electrode simplifies the preparation process, can improve production efficiency and reduce costs.

[0081] S108 , preparing an anti-reflection layer on the second metallic TaN electrode and the TaON passivation layer.

[0082] The embodiment of the present invention adopts a thermal evaporation process to deposit a MgF2 anti-reflection layer with a thickness of 30nm to 120nm on the second metallic TaN electrode and the TaON passivation layer. The vacuum degree of the vacuum chamber is better than 10 -4 Pa, the growth rate is

[0083] Thirdly, see Figure 6 An embodiment of the present invention provides a method for preparing a perovskite solar cell for near-space applications, the method comprising:

[0084] S201, selecting a transparent PI substrate and pre-treating the PI substrate;

[0085] S202, preparing an anti-reflection layer on the pretreated PI substrate;

[0086] S203, preparing a first metallic TaN electrode on the anti-reflection layer; wherein the thickness of the first metallic TaN electrode is less than 5 nm;

[0087] S204, in-situ oxidizing a portion of the first metallic TaN electrode to form a TaON passivation layer surrounding the first metallic TaN electrode;

[0088] S205, preparing a hole transport layer on the TaON passivation layer and the first metallic TaN electrode;

[0089] S206, preparing a perovskite light absorbing layer on the hole transport layer;

[0090] S207, preparing an electron transport layer on the perovskite light absorbing layer;

[0091] S208, preparing a second metallic TaN electrode on the electron transport layer; wherein the thickness of the second metallic TaN electrode is greater than 50nm.

[0092] In S203, a first metallic TaN electrode is prepared on the anti-reflection layer, including:

[0093] A first metallic TaN electrode with a thickness of 2 nm to 5 nm is prepared on the anti-reflection layer by using a magnetron reactive sputtering process;

[0094] In S208, a second metallic TaN electrode is prepared on the electron transport layer, including:

[0095] A second metallic TaN electrode with a thickness of 50 nm to 100 nm is prepared on the electron transport layer by adopting a magnetron reactive sputtering process.

[0096] In S204, a portion of the first metallic TaN electrode is in-situ oxidized to form a TaON passivation layer surrounding the first metallic TaN electrode, including:

[0097] A plasma treatment process is adopted to in-situ oxidize a portion of the first metallic TaN electrode to prepare a TaON passivation layer with a thickness of 2nm to 5nm surrounding the first metallic TaN electrode.

[0098] The specific implementation of steps S201 to S208 of the embodiment of the present invention refers to S101 to S108, except that S101 to S108 correspond to Figure 2 The detailed preparation process of the structure shown, S201 to S208 corresponds to Figure 3 The detailed preparation process of the structure shown in the figure is the same as that of the corresponding structure.

[0099] As for the method embodiments of the second and third aspects, since they are basically similar to the device embodiment of the first aspect, the description is relatively simple, and the relevant parts can be referred to the partial description of the device embodiment of the first aspect.

[0100] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0101] Although the present invention is described herein in conjunction with various embodiments, those skilled in the art may understand and implement other variations of the disclosed embodiments by reviewing the specification and accompanying drawings in the process of implementing the claimed invention. In the specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple components or steps. The fact that certain measures are described in different embodiments does not mean that these measures cannot be combined to produce good results.

[0102] The above is a further detailed description of the present invention in conjunction with specific preferred embodiments, and the specific implementation of the present invention should not be considered to be limited to these descriptions. For those skilled in the art to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, and all of these should be considered to fall within the scope of protection of the present invention.

Claims

1. A perovskite solar cell for near-space applications, characterized in that: The perovskite solar cell includes, from bottom to top, a PI substrate, a first metallic TaN electrode, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a second metallic TaN electrode; wherein, When the PI substrate is an opaque substrate, a TaON passivation layer is arranged around the second metallic TaN electrode, and an anti-reflection layer is arranged on the second metallic TaN electrode and the TaON passivation layer. In this case, the thickness of the first metallic TaN electrode is required to be greater than 50nm, and the thickness of the second metallic TaN electrode is required to be less than 5nm; wherein the TaON passivation layer is obtained by in-situ oxidation of a portion of the second metallic TaN electrode; When the PI substrate is a transparent substrate, a TaON passivation layer is arranged around the first metallic TaN electrode, and an anti-reflection layer is arranged between the PI substrate, the first metallic TaN electrode and the TaON passivation layer. At this time, the thickness of the first metallic TaN electrode is required to be less than 5nm, and the thickness of the second metallic TaN electrode is required to be greater than 50nm; wherein the TaON passivation layer is obtained by in-situ oxidation of part of the first metallic TaN electrode.

2. The perovskite solar cell for near-space applications according to claim 1, characterized in that: When the PI substrate is an opaque substrate, the thickness of the first metallic TaN electrode is 50 nm to 100 nm, and the thickness of the second metallic TaN electrode is 2 nm to 5 nm; When the PI substrate is a transparent substrate, the thickness of the first metallic TaN electrode is 2 nm to 5 nm, and the thickness of the second metallic TaN electrode is 50 nm to 100 nm.

3. The perovskite solar cell for near-space applications according to claim 1, characterized in that: The thickness of the TaON passivation layer is 2nm-5nm.

4. A method for preparing a perovskite solar cell for near-space applications, characterized in that: The preparation method comprises: Selecting an opaque PI substrate and pre-treating the PI substrate; Preparing a first metallic TaN electrode on the pretreated PI substrate; wherein the thickness of the first metallic TaN electrode is greater than 50 nm; Preparing a hole transport layer on the first metallic TaN electrode; Preparing a perovskite light absorbing layer on the hole transport layer; preparing an electron transport layer on the perovskite light absorbing layer; Preparing a second metallic TaN electrode on the electron transport layer; wherein the thickness of the second metallic TaN electrode is less than 5 nm; In-situ oxidizing a portion of the second metallic TaN electrode to form a TaON passivation layer surrounding the second metallic TaN electrode; An anti-reflection layer is prepared on the second metallic TaN electrode and the TaON passivation layer.

5. The method for preparing a perovskite solar cell for near-space application according to claim 4, characterized in that: A first metallic TaN electrode is prepared on the pretreated PI substrate, comprising: A first metallic TaN electrode with a thickness of 50 nm to 100 nm is prepared on the pretreated PI substrate by using a magnetron reactive sputtering process; Preparing a second metallic TaN electrode on the electron transport layer, comprising: A second metallic TaN electrode with a thickness of 2nm to 5nm is prepared on the electron transport layer by a magnetron reactive sputtering process.

6. The method for preparing a perovskite solar cell for near-space application according to claim 4, characterized in that: In-situ oxidizing a portion of the second metallic TaN electrode to form a TaON passivation layer around the second metallic TaN electrode, comprising: A plasma treatment process is adopted to in-situ oxidize a portion of the second metallic TaN electrode to prepare a TaON passivation layer with a thickness of 2 nm to 5 nm surrounding the second metallic TaN electrode.

7. A method for preparing a perovskite solar cell for near-space applications, characterized in that: The preparation method comprises: Selecting a transparent PI substrate and pre-treating the PI substrate; preparing an anti-reflection layer on the pretreated PI substrate; Preparing a first metallic TaN electrode on the anti-reflection layer; wherein the thickness of the first metallic TaN electrode is less than 5 nm; In-situ oxidizing a portion of the first metallic TaN electrode to form a TaON passivation layer surrounding the first metallic TaN electrode; Preparing a hole transport layer on the TaON passivation layer and the first metallic TaN electrode; Preparing a perovskite light absorbing layer on the hole transport layer; preparing an electron transport layer on the perovskite light absorbing layer; A second metallic TaN electrode is prepared on the electron transport layer; wherein the thickness of the second metallic TaN electrode is greater than 50 nm.

8. The method for preparing a perovskite solar cell for near-space application according to claim 7, characterized in that: Preparing a first metallic TaN electrode on the anti-reflection layer, comprising: Using a magnetron reactive sputtering process, a first metallic TaN electrode with a thickness of 2 nm to 5 nm is prepared on the anti-reflection layer; Preparing a second metallic TaN electrode on the electron transport layer, comprising: A second metallic TaN electrode with a thickness of 50nm to 100nm is prepared on the electron transport layer by a magnetron reactive sputtering process.

9. The method for preparing a perovskite solar cell for near-space application according to claim 7, characterized in that: In-situ oxidizing a portion of the first metallic TaN electrode to form a TaON passivation layer around the first metallic TaN electrode, comprising: A plasma treatment process is adopted to in-situ oxidize a portion of the first metallic TaN electrode to prepare a TaON passivation layer with a thickness of 2 nm to 5 nm surrounding the first metallic TaN electrode.

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