Semiconductor device and method of manufacturing semiconductor device

Abstract

A semiconductor device having a CSP structure capable of reducing warpage is provided. A semiconductor device (11) is provided with: a support (13) having a first main surface (13b), a second main surface (13c), and a semiconductor element (31); a thin-film metal electrode (15) provided on the first main surface (13b) of the support (13); a thick-film metal body (17) provided on the thin-film metal electrode (15); and a resin structure 24 provided on the support body 13, the resin structure 24 including a first resin body 19 covering at least a side surface of the thick film metal body 17 on a first main surface 13b of the support body 13, the resin structure 24 having at least one of the following structures 1 and 2: structure 1: the resin structure 24 further including a second resin body 25 provided on a second main surface 13c of the support body 13; and structure 2: The resin structure 24 provides a first region 19b and a second region 19c thicker than the first region 19b on the first main surface 13b of the support 13 to the first resin body 19.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Background Art

[0002] Patent document 1 discloses a method for suppressing the bending of a semiconductor device obtained by dividing a wafer to a minimum. The manufacturing method includes a first pasting step, a thinning step, a dividing step, a second pasting step, and a peeling step. In the first pasting step, a support plate is pasted on the first main surface of a wafer on which an integrated circuit is formed. In the thinning step, after the first pasting step, the wafer is thinned by grinding or grinding the second main surface of the wafer. In the dividing step, after the thinning step, the wafer is divided into a plurality of chip main bodies. In the second pasting step, after the dividing step, a reinforcing layer is pasted on the second main surfaces of the plurality of chip main bodies. In the peeling step, the support plate is peeled off after the second pasting step.

[0003] Prior art literature Patent Literature Patent document 1: Japanese Patent Application Publication No. 2016-146395. Summary of the invention

[0004] Problems to be solved by the invention In a method of manufacturing a semiconductor device for a CSP structure (chip size package or chip scale package), warpage of a wafer in a manufacturing process may become an obstacle in various processes.

[0005] In the conventional CSP structure, the focus has been on reducing the warpage of large semiconductor chips. However, the warpage is related not only to the size of the semiconductor chip but also to the size of the electrodes involved in the CSP structure within the semiconductor chip and the thickness of the cover resin body.

[0006] An object of the present invention is to provide a semiconductor device having a CSP structure capable of reducing warpage and a method for manufacturing the semiconductor device.

[0007] Solutions to Solve Problems A semiconductor device of the first embodiment of the present invention comprises: a supporting body having a first main surface and a second main surface on the opposite side of the first main surface, and one or more semiconductor elements; at least one thin-film metal electrode arranged on the first main surface of the supporting body; a thick-film metal body arranged on the thin-film metal electrode; and a resin structure arranged on the supporting body, the thickness of the thick-film metal body being greater than the thickness of the thin-film metal electrode, the resin structure including a first resin body covering the side surface of the thick-film metal body on the first main surface of the supporting body, the resin structure having at least one of the following structures 1 and 2: Structure 1: the resin structure also includes a second resin body arranged on the second main surface of the supporting body; and Structure 2: the resin structure provides the first resin body with a first region and a second region thicker than the first region on the first main surface of the supporting body.

[0008] A method for manufacturing a semiconductor device according to a second embodiment of the present invention comprises: preparing a base substrate having a first main surface and a second main surface on the opposite side of the first main surface, and an arrangement of multiple segments including semiconductor elements in the first main surface, and including a semiconductor; forming a thin film metal electrode on the first main surface in each of the segments of the base substrate; forming a chip product, wherein a metal thick film is formed on the first main surface in each of the segments of the base substrate to form the chip product, and the metal thick film is located on the thin film metal electrode; and forming a resin body including at least one resin thick film on the base substrate of the chip product, the thickness of the metal thick film being greater than the thickness of the thin film metal electrode, the resin body including a first resin thick film covering at least one side of the metal thick film on the first main surface of the base substrate, the resin body having at least one of the following structures 1 and 2: Structure 1: the resin body also includes a second resin thick film arranged on the second main surface of the base substrate; and Structure 2: the resin body provides the first resin thick film with a first region constituting at least one of a depression and a groove and a second region thicker than the first region on the first main surface of the base substrate.

[0009] Effects of the Invention According to the above aspects, a semiconductor device having a CSP structure capable of reducing warpage and a method of manufacturing the semiconductor device are provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a perspective view schematically showing the semiconductor device according to the present embodiment. Figure 2 It is a plan view schematically showing the semiconductor device according to the present embodiment. Figure 3 It is along Figure 2 The semiconductor device of this embodiment is shown in a cross section taken along line II-II. Figure 4 It is along Figure 2 The semiconductor device of this embodiment is shown in a cross section taken along line III-III. Figure 5 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Figure 6 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Figure 7 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Figure 8 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Fig. 9 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Fig.10 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Fig.11 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Fig.12 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Fig.13 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Fig.14 This is a cross-sectional view showing a certain step in the method of manufacturing the semiconductor device of this embodiment. Fig.15 The diagram shows main steps in the method of manufacturing the semiconductor device of this embodiment. Fig.16 is a plan view showing a wafer product and an exemplary half-cut line according to the present embodiment. Fig.17 1 is a plan view showing a wafer product according to this embodiment. Fig.18 It is a plan view showing a wafer product and a resin molding die according to this embodiment. Fig.19 FIG. 1 is a diagram showing exemplary steps in a method of manufacturing the semiconductor device of this embodiment. Fig. 20 FIG. 1 is a diagram showing exemplary steps in a method of manufacturing the semiconductor device of this embodiment. Fig.21 FIG. 1 is a diagram showing exemplary steps in a method of manufacturing the semiconductor device of this embodiment. Fig. 22 (a) to (d) are diagrams showing the dimensions of the cavity of an exemplary resin molding die in the production method of the present embodiment. Fig.23 (a) and (b) are diagrams showing an exemplary width of a half-cut region in the method of manufacturing a semiconductor device of the present embodiment and a separation region width for separation of a segment arrangement in a wafer product. Fig.24 (a) to (h) are diagrams showing exemplary configurations of a first region and a second region of a semiconductor device manufactured by the manufacturing method of this embodiment. Fig.25 (a), (b), (c), and (d) are views schematically showing a CSP assembly produced by the production method of this embodiment. DETAILED DESCRIPTION

[0011] Hereinafter, various embodiments for implementing the present invention will be described with reference to the drawings. In the following description, the same or similar parts are denoted by the same or similar reference numerals, and duplicate descriptions are omitted.

[0012] Figure 1 This is a diagram schematically showing the structure of a semiconductor device according to this embodiment. Figure 2 It is a plan view schematically showing the semiconductor device according to the present embodiment. Figure 3 It is along Figure 2 The semiconductor device of this embodiment is shown in a cross section taken along line II-II. Figure 4 It is along Figure 2 The semiconductor device of this embodiment is shown in a cross section taken along line III-III. Figure 3 and Figure 4 The shadow in the cross section.

[0013] Reference Figure 1 and Figure 2 The semiconductor device 11 includes a support 13, at least one thick film metal body 17, an element structure 14, and a resin structure 24 including at least a first resin body 19. The support 13 can include a semiconductor (for example, a Group VI semiconductor such as silicon). The support 13 has a first main surface 13b and a second main surface 13c on the opposite side of the first main surface 13b. The support 13 has an edge 13k that defines the first main surface 13b of the support 13.

[0014] The resin structure 24 is provided on the support 13 so as not to cover the side surface 13s of the edge 13k of the support 13. The resin structure 24 includes a first resin body 19 covering at least the side surface of the thick-film metal body 17 on the first main surface 13b of the support 13.

[0015] Reference Figure 1 , the first resin body 19 and the second resin body 25 are provided to the resin structure body 24 of the semiconductor device 11. However, the semiconductor device 11 is not limited thereto.

[0016] The resin structure 24 can have at least one of the following Structure 1 and Structure 2 . Structure 1: Resin structure 24 further includes second resin body 25 provided on second major surface 13c of support 13. And Structure 2: Resin structure 24 provides first resin body 19 with first region 19b and second region 19c thicker than first region 19b on first major surface 13b of support 13.

[0017] According to the semiconductor device 11, when the second resin body 25 is provided on the second main surface 13c of the support body 13, the warping of the support body 13 is reduced in the semiconductor device 11 having the first resin body 19 and the thick film metal body 17 on the first main surface 13b of the support body 13. The support body 13 can be provided between the first resin body 19 and the second resin body 25. In addition, when the first resin body 19 is provided with the first region 19b and the second region 19c on the first main surface 13b of the support body 13, the thin first region 19b separates the thick second region 19c from each other, and stress is easily relieved.

[0018] Specifically, the semiconductor device 11 can have several forms.

[0019] First mode: In the exemplary semiconductor device 11, the resin structure 24 includes a first resin body 19 and a second resin body 25. The first resin body 19 and the second resin body 25 do not cover the side surface 13s of the edge 13k of the support body 13 and are separated from each other. The first resin body 19 includes a first region 19b and a second region 19c. According to the semiconductor device 11, the support body 13 is arranged between the first resin body 19 and the second resin body 25, and the support body 13 receives stress from the two resin bodies (19, 25) on the first main surface 13b and the second main surface 13c. At least a part of the stress from the two resin bodies (19, 25) cancels each other in the support body 13. In addition, the thin first region 19b and the thick second region 19c of the first resin body 19 act in a manner of dispersing stress.

[0020] Second mode: In the exemplary semiconductor device 11, the resin structure 24 includes a first resin body 19 and a second resin body 25. The first resin body 19 and the second resin body 25 do not cover the side surface 13s of the edge 13k of the support body 13 and are separated from each other. The first resin body 19 does not include the first region 19b and the second region 19c. Figures 1 to 4 The semiconductor device 11 shown in the figure has the first region 19b removed. According to the semiconductor device 11, the support body 13 is provided between the first resin body 19 and the second resin body 25, and the support body 13 receives stress from the two resin bodies (19, 25) on the first main surface 13b and the second main surface 13c. At least a part of the stress from the two resin bodies (19, 25) is offset in the support body 13.

[0021] Third embodiment: In the exemplary semiconductor device 11, the resin structure 24 includes the first resin body 19, but does not include the second resin body 25. Figures 1 to 4 The semiconductor device 11 shown in the figure does not include the second resin body 25. The first resin body 19 includes a first region 19b and a second region 19c. According to the semiconductor device 11, the thin first region 19b and the thick second region 19c of the first resin body 19 function to disperse stress.

[0022] According to the first and third aspects of the semiconductor device 11, the difference in resin thickness between the first region 19b and the second region 19c prevents the first resin body 19 from applying stress to the support body 13 as a single piece of resin. In addition, the first region 19b and the second region 19c having different thicknesses reduce the resin volume of the first resin body 19. The difference in resin thickness between the first region 19b and the second region 19c is provided by, for example, half-cutting with a dicing saw and molding resin processing using a resin molding die.

[0023] In the CSP structure, the resin structure 24 is provided on the semiconductor chip. Specifically, the first resin body 19 is provided on the semiconductor chip, specifically, on the front side of the semiconductor chip. In addition, the second resin body 25 is provided on the semiconductor chip, specifically, on the back side of the semiconductor chip. The thickness of the second resin body 25 can be smaller than the thickness of the first resin body 19, and the formation area of ​​the second resin body 25 can be smaller than the formation area of ​​the first resin body 19. The first resin body 19 causes the warping of the wafer product, while the second resin body 25 mitigates the warping of the wafer product. Accordingly, the volume of the second resin body 25 can be made the same as the volume of the first resin body 19.

[0024] Reference Figure 1 and Figure 2The first region 19b of the semiconductor device 11 is disposed along four edges 13k. However, the first region 19b can be disposed along at least a portion of the four edges 13k or a portion of the edge 13k of the support body 13, that is, partially disposed on the edge 13k. The second region 19c is adjacent to the first region 19b.

[0025] According to the semiconductor device 11, when the first region 19b is partially provided on the edge 13k of the support body 13, the thickness of the first resin body 19 (e.g., epoxy resin) becomes thinner from the inner region of the semiconductor device 11 to the scribe line region. In the manufacturing process, the thick second region 19c of the adjacent segments (the segment is a semiconductor chip including the support body 13) is separated by the thin first region 19b between the segments, and the stress is relieved. In this state, the adjacent segments are separated to form a semiconductor chip. In the semiconductor device 11, the stress in the chip size package (CSP) structure is relieved.

[0026] like Figure 1 and Figure 2 As shown, the exemplary semiconductor device 11 provides a first edge 13k1, a second edge 13k2, a third edge 13k3, and a fourth edge 13k4 to the support body 13. The first edge 13k1 and the second edge 13k2 extend in a first direction (the X axis of the coordinate system CS), and the third edge 13k3 and the fourth edge 13k4 extend in a second direction (the Y axis of the coordinate system CS) intersecting the first direction. The exemplary first main surface 13b is defined by a plurality of edges, such as the first edge 13k1, the second edge 13k2, the third edge 13k3, and the fourth edge 13k4.

[0027] In the exemplary semiconductor device 11, the first region 19b of the first resin body 19 is disposed along all of the first edge 13k1, the second edge 13k2, the third edge 13k3, and the fourth edge 13k4. The first region 19b has a closed shape that surrounds the second region 19c. According to the semiconductor device 11, when the first region 19b has a closed shape that surrounds the second region 19c along the edge 13k of the support body 13, the second region 19c is surrounded by the first region 19b, and the stress in the second region 19c is reduced toward any edge 13k.

[0028] The first region 19b can be arranged along any one of the first edge 13k1, the second edge 13k2, the third edge 13k3, and the fourth edge 13k4. In addition, the first region 19b can be arranged on at least two edges 13k (e.g., two adjacent edges 13k or two separated edges 13k) among the first edge 13k1, the second edge 13k2, the third edge 13k3, and the fourth edge 13k4. In addition, the first region 19b can be arranged on at least three edges among the first edge 13k1, the second edge 13k2, the third edge 13k3, and the fourth edge 13k4.

[0029] Reference Figure 3 and Figure 4 The semiconductor device 11 has a CSP structure. Specifically, the semiconductor device 11 further includes a support body 13 , at least one thin-film metal electrode 15 , at least one thick-film metal body 17 , an insulating layer 21 , and a resin structure 24 .

[0030] The thin film metal electrode 15 is disposed on the first main surface 13b of the support body 13. The thick film metal body 17 is located on the thin film metal electrode 15 and can include, for example, a metal film. The thickness of the thick film metal body 17 is greater than the thickness of the thin film metal electrode 15. The resin structure 24 includes at least one of a first resin body 19 and a second resin body 25. The second resin body 25 is disposed on the second main surface 13c of the support body 13, and in the present embodiment, is disposed over the entire second main surface 13c.

[0031] The semiconductor device 11 can have one or more semiconductor elements 31 (e.g., active elements such as transistors) disposed in the support body 13. In addition, the semiconductor device 11 can include an insulating structure 33 disposed between the thin-film metal electrode 15 and the semiconductor element 31. At least one of the semiconductor elements 31 can be electrically connected to at least one thick-film metal body 17 via an opening of the insulating structure 33. The insulating structure 33 includes, for example, one or more insulating films, which can include a silicon-based inorganic insulating film or a resin film.

[0032] In the support body 13, the first main surface 13b has an element region 13d and a peripheral region 13e. The element region 13d includes a semiconductor element 31 and carries a first resin body 19, a thin film metal electrode 15, and a thick film metal body 17. The peripheral region 13e carries the first resin body 19. The thin film metal electrode 15 and the thick film metal body 17 are separated from the peripheral region 13e. The peripheral region 13e surrounds the element region 13d.

[0033] The thin-film metal electrode 15 is arranged on the first main surface 13b of the carrier 13 and can be electrically connected to at least one semiconductor element 31. The thin-film metal electrode 15 can include aluminum, for example.

[0034] The thick-film metal body 17 is located on the thin-film metal electrode 15 and the insulating layer 21. The thick-film metal body 17 can include a metal film including copper. The thick-film metal body 17 can include, for example, a copper plating film and a seed layer for plating.

[0035] The thickness of the first region 19b of the first resin body 19 is smaller than the thickness of the thick-film metal body 17. The first resin body 19 reaches the edge 13k of the support body 13. In addition, the second resin body 25 can be configured to reach the edge 13k of the support body 13.

[0036] The first resin body 19 is provided on the first main surface 13b of the support body 13, and covers the side surface 17b of the thick-film metal body 17. The first resin body 19 can include epoxy resin, and the second resin body 25 can include epoxy resin.

[0037] The insulating layer 21 has one or more first openings 22b, 22c, each of which is located on the thin film metal electrode 15. In one embodiment, the insulating layer 21 can cover the edge 16b of the thin film metal electrode 15, thereby preventing the thick film metal body 17 from reaching the base structure of the thin film metal electrode 15 of the element area 13d. The insulating layer 21 can include a resin body such as a polyimide resin. The insulating layer 21 is a single connection area in which the total area of ​​the openings 22b of the insulating layer 21 is larger than the total area of ​​the upper surface of the insulating layer 21.

[0038] The support body 13, the thin film metal electrode 15 and the thick film metal body 17 are arranged in the direction of the first axis Ax1. The upper surface 17c of the thick film metal body 17 and the upper surface 19d of the first resin body 19 can extend along the reference plane REF intersecting the first axis Ax1, and the level difference between the upper surface 17c of the thick film metal body 17 and the upper surface 19d of the first resin body 19 does not substantially exist.

[0039] The second inorganic insulating film 23 can be provided on at least a portion of the first main surface 13b of the support body 13, and the second inorganic insulating film 23 can be provided between the first resin body 19 and the insulating layer 21. The second inorganic insulating film 23 is a single connection region in which the total area of ​​the second openings 23b of the second inorganic insulating film 23 is larger than the total area of ​​the upper surface of the second inorganic insulating film 23. In the present embodiment, the second inorganic insulating film 23 extends outward across the boundary between the peripheral region 13e and the element region 13d, and can reach the edge of the first main surface 13b of the support body 13.

[0040] The second inorganic insulating film 23 can include a silicon-based inorganic oxide film and / or a silicon-based inorganic oxynitride film that can be deposited at a film forming temperature not exceeding the heat resistance temperature of the base structure, and can include an inorganic insulator containing silicon and nitrogen, such as SiN.

[0041] The resin structure 24 can be provided with one or both of the first resin body 19 and the second resin body 25. In the element region 13d, the first resin body 19 is separated from the support 13 and the insulating layer 21 through the second inorganic insulating film 23.

[0042] The second resin body 25 of the resin structure 24 can be provided on at least a portion of the second main surface 13c of the support 13. The exemplary second resin body 25 extends outward beyond the boundary between the element region 13d and the peripheral region 13e in the second main surface 13c and can reach the edge of the second main surface 13c of the support 13.

[0043] In this embodiment, the second resin body 25 can extend from the edge of the second main surface 13c or the vicinity of the edge, for example, a position away from the edge, along the second main surface 13c toward the center of the second main surface 13c. According to the semiconductor device 11, the second resin body 25 extends along the second main surface 13c of the support body 13 to maintain the coplanarity of the support body 13.

[0044] The second resin body 25 extends along the second main surface 13c of the support body 13. In this embodiment, the second resin body 25 is provided over the entire second main surface 13c, but this embodiment is not limited to this arrangement and can be provided on a major portion of the second main surface 13c.

[0045] like Figure 3 As shown, the thickness D17 of the thick film metal body 17 is greater than the thickness D15 of the thin film metal electrode 15. Figure 4 As shown, the thickness D19 of the first resin body 19 is greater than the thickness D21 of the insulating layer 21 .

[0046] According to the semiconductor device 11, the thickness D17 of the thick film metal body 17 is greater than the thickness D15 of the thin film metal electrode 15, and the thickness D19 of the first resin body 19 is greater than the thickness D21 of the insulating layer 21. In the semiconductor device 11, the upper surface 17c of the thick film metal body 17 and the upper surface 19d of the first resin body 19 extend along the reference plane REF, and a structure for chip size packaging (e.g., CSP structure) can be provided. In this structure, the resin structure 24 including the first resin body 19 having the first region 19b and the second region 19c can reduce the warping of the support body 13 caused by the stress from the thick film metal body 17 and the first resin body 19. In addition, the resin structure 24 including the first resin body 19 and the second resin body 25 can reduce the warping of the support body 13 caused by the stress from the thick film metal body 17 and the first resin body 19.

[0047] In the resin structure 24, specifically, the second inorganic insulating film 23 has a second opening 23b, and the second opening 23b is located on the first openings 22b and 22c of the insulating layer 21 and the thin film metal electrode 15. The thick film metal body 17 is connected to the thin film metal electrode 15 via the second opening 23b of the second inorganic insulating film 23. In the present embodiment, the thick film metal body 17 is located on the thin film metal electrode 15 and the insulating layer 21. The second inorganic insulating film 23 extends from the edge of the second opening 23b of the second inorganic insulating film 23 to the edge 13k of the support 13 between the support 13 and the first resin body 19.

[0048] According to the semiconductor device 11 , the second inorganic insulating film 23 is provided to extend along the support body 13 from the edge of the second opening 23 b of the second inorganic insulating film 23 to the edge 13 h of the support body 13 , and surrounds the bottom of the thick-film metal body 17 .

[0049] Reference Figure 1 and Figure 2 , four thick film metal bodies 17 are provided, and a first resin body 19 is provided between them, providing a CSP structure. In the exemplary semiconductor device 11, each of the thick film metal bodies 17 is connected to the thin film metal electrode 15 located below via a single first opening 22b and a single second opening 23b. In the exemplary semiconductor device 11, the potential stress applied to the support body 13 by the thick film metal body 17 is associated not only with the area of ​​the upper surface 17c of the thick film metal body 17, but also with the volume of the thick film metal body 17. The ratio of the thick film metal body 17 in the support body 13 (hereinafter referred to as "filling rate") can be specified, for example, in a wafer product in a wafer process or in a semiconductor chip.

[0050] According to certain estimates, semiconductor chips to date have a filling rate of 20% to 30%. Higher filling rates can be estimated in wafer products in the wafer process and in semiconductor chips from finished wafer products.

[0051] Reference Figure 3 and Figure 4 , the thin film metal electrode 15 can include one or more pad electrodes. The thick film metal body 17 can include one or more metal pillars connected to the pad electrodes of the thin film metal electrode 15. The first main surface 13b of the support body 13 includes a first region 13f and a second region 13g, the first region 13f carries the metal pillars of the thick film metal body 17, and the second region 13g carries the thick film resin body. In this embodiment, the area of ​​the first region 13f is larger than the area of ​​the second region 13g.

[0052] According to the semiconductor device 11, since the area of ​​the first region 13f is larger than the area of ​​the second region 13g, the semiconductor device 11 has a structure in which the support body 13 receives stress from the thick film metal body 17 in the first region 13f. The first resin body 19 is provided to cover the side surface 17b of the thick film metal body 17 in the second region 13g of the support body 13. In this structure, the support body 13 receives stress from the first resin body 19 in the second region 13g.

[0053] In addition, if Figure 4 As shown, the second main surface 13c has a third region 13i and a fourth region 13j. The third region 13i and the fourth region 13j are respectively defined to be associated with the second main surface 13c corresponding to the first region 13f and the second region 13g of the first main surface 13b.

[0054] The second resin body 25 can be provided at least on the third region 13i, and can support the support body 13 opposite to the thick-film metal body 17. The second resin body 25 can extend outward (on the fourth region 13j) beyond the boundary between the third region 13i and the fourth region 13j, and can support the support body 13 opposite to the thick-film metal body 17 and the first resin body 19. The second resin body 25 can be separated from the edge 13k of the support body 13.

[0055] Reference Figure 3 and Figure 4 , the thin film metal electrode 15 is located directly below the thick film metal body 17. The first openings 22b and 22c of the insulating layer 21 are located on the thin film metal electrode 15. The thick film metal body 17 covers the entire upper surface of the thin film metal electrode 15 in the first openings 22b and 22c of the insulating layer 21, and extends to the upper surface of the insulating layer 21 beyond the edge of the insulating layer 21.

[0056] The area of ​​the upper surface of the thin film metal electrode 15 (dimension W15 ) is larger than the area of ​​the upper surface of the insulating layer 21 (dimension W21 ).

[0057] According to the semiconductor device 11, the thick film metal body 17 is bonded to the thin film metal electrode 15 provided on the first main surface 13b of the support body 13 via the first openings 22b and 22c of the insulating layer 21. The insulating layer 21 is provided on the first main surface 13b of the support body 13 in a manner to avoid bonding of the thin film metal electrode 15 with the thick film metal body 17, and a flattened surface is provided on the first main surface 13b of the support body 13. A flattened surface is provided to the base of the second inorganic insulating film 23 to avoid a potential increase in thermal stress caused by warping or height difference at the base of the first resin body 19 and / or the thick film metal body 17.

[0058] Thick film metal body 17 covers the entire upper surface of thin film metal electrode 15 in first openings 22b, 22c of insulating layer 21. In addition, insulating layer 21 is a single connection region in which the total area of ​​first openings 22b, 22c of insulating layer 21 is larger than the total area of ​​the upper surface of insulating layer 21.

[0059] According to the semiconductor device 11, the insulating layer 21 is provided on the first main surface 13b of the support body 13 in a manner to avoid the bonding between the thick film metal body 17 and the thin film metal electrode 15, and the total area of ​​the first openings 22b and 22c of the insulating layer 21 is larger than the total area of ​​the upper surface of the insulating layer 21. If the insulating layer 21 is formed as a single connection region, the insulating layer 21 can be provided in a manner to cover more of the first main surface 13b of the support body 13, and further, a flattened base can be provided on the second inorganic insulating film 23.

[0060] In addition, the first resin body 19 is also provided on the first main surface 13b of the support body 13 in a manner to avoid bonding between the thick film metal body 17 and the thin film metal electrode 15. The first resin body 19 is a single connection region in which the total area of ​​the openings of the first resin body 19 is larger than the total area of ​​the upper surface of the first resin body 19.

[0061] Reference Figure 3 The insulating layer 21 has an inner edge 22f defining the first openings 22b and 22c of the insulating layer 21, and an outer edge 22g defining the size of the insulating layer 21. The outer edge 22g of the insulating layer 21 is away from the edge 13k of the support body 13, while the first resin body 19 reaches the edge 13k of the support body 13. According to the semiconductor device 11, the insulating layer 21 can be provided near the edge 13k of the support body 13, for example, to the edge of the scribe area of ​​the support body 13.

[0062] Figures 5 to 14 2 is a cross-sectional view showing main steps in a method of manufacturing the semiconductor device of this embodiment. Figures 5 to 14 Each of the Figure 3 The progress of the wafer product in the manufacturing process in the cross section corresponding to the line III-III is shown. Figures 5 to 14 The shadows in each section of . Fig.15 1 is a flowchart showing main steps in a method of manufacturing a semiconductor device according to an embodiment. In the following description, in order to facilitate understanding, reference numerals used in the above description are used for the same or similar parts as possible.

[0063] exist Figure 5 The first step shown (eg Fig.15 In S101 in the above, a base substrate 41 formed by processing a semiconductor wafer is prepared. The base substrate 41 can include a semiconductor such as silicon. The semiconductor region of the base substrate 41 has a first main surface 42b and a second main surface 42c on the opposite side of the first main surface 42b. The base substrate 41 has a plurality of segments ( Figure 5 Each of the segments 40 includes a semiconductor element 43. Figures 5 to 14 , one section is depicted. The semiconductor element 43 is formed in the semiconductor region. The semiconductor element 43 includes elements such as transistors, electrodes, and interconnection wirings, which can be made by applying a plurality of semiconductor processes to a semiconductor substrate such as a wafer.

[0064] In the second step, an insulating structure 33 covering the base substrate 41 is formed to obtain a wafer product 40a. The insulating structure 33 can include at least one of an inorganic insulator and an organic insulator. Specifically, the insulating structure 33 covers the region of the semiconductor element 43.

[0065] exist Figure 6 The third step shown (eg, Fig.15 In S102), a thin film metal electrode 15 is formed in each of the segments 40 to obtain a wafer product 40b. The thin film metal electrode 15 is formed on the first main surface 42b of the base substrate 41, specifically on the insulating structure 33, and can be connected to the semiconductor element 43 in the segment 40 via the opening of the insulating structure 33. In the formation of the thin film metal electrode 15, for example, semiconductor processes such as deposition, photolithography, and etching of a metal layer are used. The thin film metal electrode 15 can include aluminum, for example.

[0066] exist Figure 7 The fourth step shown (eg, Fig.15 In S103), in each of the segments 40, an insulating layer 21 is formed on the first main surface 42b to obtain a wafer product 40c. The insulating layer 21 has a first opening 22b located on the thin film metal electrode 15 and covers the edge 16b of the thin film metal electrode 15. In the formation of the insulating layer 21, for example, semiconductor processes such as organic coating, baking, photolithography and etching are used. The insulating layer 21 can include, for example, a polyimide resin.

[0067] exist Figure 8 The fifth step shown (eg Fig.15 In step S104), a resin structure 24 is formed. In this step, a second inorganic insulating film 23 is formed to obtain a wafer product 40d. The second inorganic insulating film 23 is formed on the insulating layer 21 of the first main surface 42b of the base substrate 41. The second inorganic insulating film 23 has a second opening 23b on the thin film metal electrode 15, and the second opening 23b is aligned with the first opening 22b. In this embodiment, the size of the second opening 23b is larger than the size of the first opening 22b. The second inorganic insulating film 23 can include, for example, a silicon-based inorganic nitride such as SiN.

[0068] exist Fig. 9 The sixth step shown (eg, Fig.15 In S105), a metal thick film 18 is formed on the first main surface 42b in each of the segments 40 to obtain a wafer product 40e. The metal thick film 18 can have copper. The metal thick film 18 is located on the thin film metal electrode 15 and is connected to the thin film metal electrode 15 via the first opening 22b of the insulating layer 21. The metal thick film 18 has a thickness greater than that of the thick film metal body 17. In the formation of the metal thick film 18, for example, a plating method is used, specifically, a semiconductor process such as deposition of a seed layer (patterning if necessary), formation of an electrolytic plating film, and removal of the seed layer if necessary is used.

[0069] In addition, another example of the resin structure 24 , specifically, the formation of the resin for the second resin body 25 will be described later.

[0070] exist Fig.10 The seventh step shown (eg Fig.15 In S106 of the step, at least one resin thick film 20 is formed on the wafer product 40e to obtain a wafer product 40f. The exemplary resin thick film 20 is formed on the first main surface 42b in each of the segments 40 in a manner covering the upper surface and side surfaces of the metal thick film 18. The resin thick film 20 has a thickness greater than that of the first resin body 19. In addition, the resin thick film 20 has a thickness greater than that of the metal thick film 18.

[0071] Forming the resin structure 24 including the resin thick film 20 on the base substrate 41 includes performing heat treatment of the resin.

[0072] like Fig.10 As shown, in the present embodiment, in the formation of the resin thick film 20 as an example of the resin structure 24, for example, coating is used, specifically, a semiconductor process such as coating, baking, and processing using a dicing saw is used. The resin thick film 20 can include, for example, epoxy resin. However, the formation of the resin thick film 20 is not limited thereto. The formation of the resin thick film 20 can be formed, for example, by molding resin processing using a resin molding die.

[0073] like Fig.11 As shown, in the wafer product 40e (refer to Fig. 9 ) is coated with resin to obtain a wafer product 40f0. The wafer product 40f0 has a first resin thick film 26 formed on the first main surface 42b in each of the segments 40. The first resin thick film 26 can be formed on the metal thick film 18 to a thickness that is approximately the same as the thickness of the metal thick film 18. The first resin thick film 26 can be formed to a thickness that is approximately twice the thickness of the metal thick film 18 at the side portion of the first resin thick film 26 formed in a manner to cover the side surface of the metal thick film 18.

[0074] When the surface of the wafer product 40f0 is not processed, Fig.11 The first resin thick film 26 shown directly becomes the resin thick film 20 .

[0075] The surface of the wafer product 40f0 can also be processed. Specifically, Fig.10 As shown, the surface of the first resin thick film 26 of the wafer product 40f0 is processed to form the resin thick film 20. The resin thick film 20 has a structure 28 on its surface, such as at least one of a depression and a groove. The formation of the structure 28 such as the depression and the groove can be performed using, for example, a dicing saw.

[0076] Specifically, the structure 28 can be formed by half-cutting the first resin thick film 26 using a dicing saw. The half-cutting of the first resin thick film 26 can be performed at the boundary of the adjacent segments 40 of the base substrate 41 carrying the first resin thick film 26. In addition, the half-cutting of the first resin thick film 26 can be performed along at least one of the multiple boundaries of the segment 40. In addition, the half-cutting of the first resin thick film 26 can be performed at each boundary of the segment 40. The depth of the recess caused by the dicing saw does not reach the wafer product 40e. An exemplary depth can be about half the thickness of the resin formed on the front surface of the wafer product 40e. The depth of the half-cut can be determined so that the size of the warpage can be reduced.

[0077] The resin thick film 20 has a thin first region 26b including a structure 28 formed on the first resin thick film 26, and a second region 26c thicker than the first region 26b. The structure 28 provides the first region 19b to the semiconductor device 11, and the second region 19c is adjacent to the first region 19b. Surface shapes such as depressions and grooves are formed by the thin resin portion formed by half-cutting and the thick resin portion that is not half-cut. After the structure 28 is formed on the first resin thick film 26, the first resin thick film 26 can be heat-treated to form the resin thick film 20.

[0078] In the exemplary wafer product 40f, at least one resin thick film 20 is formed on the base substrate 41 by forming the structure 28 on the first resin thick film 26. The exemplary wafer product 40f has reduced warpage.

[0079] exist Fig.12 The eighth step shown (eg Fig.15 In S107 in the above, the resin thick film 20 and the metal thick film 18 are ground, and the first resin body 19 and the thick film metal body 17 are formed from the resin thick film 20 and the metal thick film 18, respectively, to obtain a chip product 40g. Before grinding, the chip product 40f is fixed to the support plate 45. Specifically, the support plate 45 is attached to the second main surface 42c, and after grinding, it is separated from the chip product 40g. In the chip product 40f, its warpage is reduced. During grinding, it is easy to attach the chip product to the support plate 45 (refer to Fig.12 ). In addition, the ground wafer product showed good in-plane uniformity.

[0080] In the wafer product 40 g , in each of the sections 40 , the side surface 17 b of the thick-film metal body 17 is covered with the first resin body 19 , and the thick-film metal body 17 is accommodated in the opening of the first resin body 19 .

[0081] The base substrate 41, the thin film metal electrode 15 and the thick film metal body 17 are arranged in the direction of the first axis Ax1. The upper surface 17c of the thick film metal body 17 and the upper surface 17c of the first resin body 19 can extend along a reference plane REF intersecting the first axis Ax1, and the level difference between the upper surface 17c of the thick film metal body 17 and the upper surface 17c of the first resin body 19 does not substantially exist.

[0082] According to this manufacturing method, the thickness of the thick-film metal body 17 is greater than the thickness of the thin-film metal electrode 15, and the thickness of the first resin body 19 is greater than the thickness of the insulating layer 21. In this semiconductor device 11, the upper surface 17c of the thick-film metal body 17 and the upper surface 19d of the first resin body 19 extend along the reference plane REF, and a structure for chip size packaging can be provided. In this structure, the resin structure 24 can reduce the warping of the base substrate 41 due to the stress from the thick-film metal body 17 and the first resin body 19 of each segment 40.

[0083] exist Fig.13 The ninth step shown (eg Fig.15 In S108 in the above process, the arrangement of the segments 40 in the wafer product 40g is separated to obtain a plurality of semiconductor devices 11. Each semiconductor device 11 has a form of a semiconductor chip.

[0084] According to the manufacturing method described above, the semiconductor device 11 and the wafer product 40g having reduced warpage are provided.

[0085] The method for manufacturing the semiconductor device 11 may include: Fig.13 In the tenth step, another exemplary resin structure 24 is formed. Specifically, a second resin thick film 30 is formed on at least a portion of the second main surface 42c of any one of the wafer product 40e, the wafer product 40f0, or the wafer product 40f, to provide a wafer product 40h. Fig.14 The wafer product 40h is formed, for example, from the wafer product 40f0. The second resin thick film 30 is formed as a resin film for the second resin body 25. Alternatively, the second resin thick film 30 can be formed on at least a portion of the second main surface 42c of the wafer product 40f. Alternatively, the second resin thick film 30 can be formed on at least a portion of the second main surface 42c of the wafer product 40e.

[0086] In the present embodiment, the resin thick film 20 including the second resin thick film 30 is formed by, for example, coating, specifically, a semiconductor process such as coating and baking. The second resin thick film 30 of the resin thick film 20 can include, for example, epoxy resin. After the second resin thick film 30 is formed, the second resin thick film 30 can be heat-treated to form the resin thick film 20.

[0087] However, the formation of the second resin thick film 30 is not limited thereto, and the second resin thick film 30 can be formed by, for example, a mold resin process using a resin molding die.

[0088] In this embodiment, the exemplary resin thick film 20 includes a first resin thick film 26 and a second resin thick film 30, and a base substrate 41 is arranged between the first resin thick film 26 and the second resin thick film 30, thereby reducing the warpage of a chip product 40h including the first resin thick film 26 and the second resin thick film 30.

[0089] according to Fig.12 The treatment in the eighth step shown can grind away the resin thick film 20 and the metal thick film 18 of the wafer product 40h, and form the first resin body 19 and the thick film metal body 17 from the resin thick film 20 and the metal thick film 18, respectively. The post-treatment is applied to this wafer product in the same manner as the wafer product 40g.

[0090] Refer again Fig.12 and Fig.13 It should be understood that each of the segments 40 includes the device region 44 b and half of the separation region 44 c. The wafer product 40 g (and the base substrate 41 ) has a two-dimensional arrangement of the segments 40 .

[0091] The wafer product 40g (and the base substrate 41) includes a grid-shaped arrangement (two-dimensional arrangement) of element regions 44b and a grid-shaped separation region 44c that defines the arrangement of the element regions 44b. The separation region 44c is arranged between any one element region 44b in the grid-shaped arrangement and an element region 44b adjacent to the element region 44b.

[0092] According to the manufacturing method, the warping of the base substrate 41 can be reduced without reducing the photolithography rate.

[0093] The chip product 40g has a base substrate 41, and includes element regions 44b in the segments 40 arranged in a grid and grid-shaped separation regions 44c arranged along the boundaries of these segments 40. The chip product 40g also includes at least one thin film metal electrode 15 provided on the first main surface 42b and at least one thick film metal body 17 provided on the first main surface 42b in each segment 40 or at least one segment 40. In addition, the chip product 40g includes a first resin body 19 provided on the first main surface 42b throughout the segments 40 and filling between the thick film metal bodies 17. In addition, the chip product 40g also includes a resin structure 24 provided on the base substrate 41.

[0094] The resin structure 24 has a first resin thick film 26 on the first main surface 42b of the base substrate 41. In addition, the resin structure 24 can have at least one of the following structures 1 and 2. The resin structure 24 further includes a second resin thick film 30 provided on the second main surface 42 c of the base substrate 41 ; and The resin structure 24 provides the first resin thick film 26 with a thin first region 26 b and a second region 26 c that is thicker than the first region 26 b on the first main surface 42 b of the base substrate 41 .

[0095] The resin structure 24 is Fig.12 The eighth step shown (eg Fig.15 The first resin thick film 26 is formed after the step of forming the metal thick film 18. In addition, the formation of the first region 26b and the second region 26c in the first resin thick film 26 can be performed before the formation of the second resin thick film 30 or after the formation of the second resin thick film 30.

[0096] The above-described constituents are provided in the wafer product 40g, and as described above, the wafer product 40g has a large filling rate.

[0097] Refer again Fig.15 , the method 100 for manufacturing the semiconductor device 11 provides a method for making several exemplary structures. The method 100 can include a sixth step (step S106). The method 100 can also include an eighth step (step S107). The method 100 can also include a ninth step (step S108). The method 100 can also include at least one of steps S101 to S105. Next, each step is described. In step S101, a base substrate 41 is prepared. In step S102, a thin film metal electrode 15 is formed. In step S103, an insulating layer 21 is formed. In step S104, a second inorganic insulating film 23 is formed. In step S105, a metal thick film 18 is formed. In step S106, at least one resin thick film 20 is formed for the resin structure 24. In step S107, the metal thick film 18 and the resin thick film 20 are ground, and a thick film metal body 17 and a first resin body 19 are formed from the metal thick film 18 and the resin thick film 20, respectively. In step S108, the arrangement of the segments 40 in the wafer product 40g is separated to obtain a plurality of semiconductor devices 11 (semiconductor chips and packages). According to the above method 100, the semiconductor devices 11 and the wafer product 40g are provided.

[0098] According to the present embodiment, a semiconductor device 11 having a CSP structure capable of reducing warpage and a method 100 of manufacturing the semiconductor device are provided.

[0099] Fig.1640f0 can be cut in half along the cutting lines (D0 to D15) of each separation area (e.g., scribe area) of the segment 40 in the X-axis direction of the coordinate system CS. In addition, the wafer product 40f0 can be cut in half along the cutting lines (D16 and D17) of each separation area of ​​the segment 40 in the Y-axis direction of the coordinate system CS. In addition, the wafer product 40f0 can be cut in half along the cutting lines (D18 and D19) of each separation area of ​​the segment 40 in the Y-axis direction of the coordinate system CS.

[0100] Fig.17 2 is a plan view showing a wafer product of this embodiment. Fig.17 , the wafer product 40e includes segments 40 arranged in two dimensions.

[0101] Fig.18 1 is a plan view showing a wafer product and a resin molding die according to this embodiment. Fig.18 As shown, the wafer product 40e is formed Fig.15 When the resin thick film is formed in step S106, it is arranged in the prepared resin molding die 51.

[0102] As indicated by arrows RIN, the molding resin is injected into the resin molding die 51 , and the remaining portion of the injected molding resin is discharged as indicated by arrows ROUT1 , ROUT2 , and ROUT3 .

[0103] A product having substantially the same size as the wafer is resin molded together using a resin molding die 51. The resin structure 24 of the product can include at least one of the first resin thick film 26 and the second resin thick film 30. The first resin thick film 26 (or the second resin thick film 30) formed by resin molding can be half-cut by dicing.

[0104] Fig.19 , Fig. 20 , Fig.21 FIG. 1 is a diagram showing exemplary steps in a method of manufacturing the semiconductor device of this embodiment. Fig.19 , Fig. 20 , Fig.21 The manufacturing method shown uses a resin molding die 51 (53, 55, 57). The resin molding die 51 (53, 55, 57) has at least one cavity CVTY. The resin molding die 51 (53, 55, 57) can have a cavity CVTY on the upper side of the wafer product and can also have a cavity on the lower side of the wafer product.

[0105] Specifically, when forming the resin thick film 20, a resin body can be formed on the first main surface 42b of the base substrate 41 in the resin molding die 51 (53, 55, 57). In addition, when forming the resin thick film 20, a resin body can be formed on the second main surface 42c of the base substrate 41 in the resin molding die 51 (53, 55, 57). Thus, by forming a resin body on the base substrate 41 using the resin molding die 51 (53, 55, 57), the first resin thick film 26 (and the second resin thick film 30) can be formed on the base substrate 41.

[0106] The formation of the resin structure 24 on the base substrate 41 , specifically, the wafer product 40 e , can include the following steps. The wafer product 40e is placed in the resin molding die 51 (53, 55, 57). The resin structure 24 is formed on the wafer product 40e using the resin molding die 51 (53, 55, 57).

[0107] The resin molding die (53, 55, 57) has a vertical wall (53b, 55b, 57b) aligned with the boundary position of the segment 40 in the base substrate 41 of the wafer product 40e arranged in the resin molding die 51 (53, 55, 57). The vertical wall (53b, 55b, 57b) defines the cavity CVTY. In addition, the vertical wall (53b, 55b, 57b) is configured to provide a structure 28 such as a recess or a groove to the resin structure 24. The structure 28 can extend in at least one of a first direction (e.g., X direction) and a second direction (e.g., Y direction) associated with the arrangement of the segments 40.

[0108] like Fig.19 As shown, cavity CVTY can be pressed Fig.17 Each segment 40 is shown arranged.

[0109] In step S201, the wafer product 40e is placed in the resin molding die 53 (51). In step S202, molten resin is injected into the resin molding die 53 (51) to form at least one of the first resin thick film 26 and the second resin thick film 30 on the base substrate 41. In this embodiment, the first resin thick film 26 is formed. In step S203, the molded product is taken out from the resin molding die 53 (51) to obtain the wafer product 40i.

[0110] like Fig. 20 As shown in FIG. , cavity CVTY can be configured to receive Fig.17 A plurality of adjacent segments 40 are shown.

[0111] In step S301, the wafer product 40e is placed in the resin molding die 55 (51). In step S302, molten resin is injected into the resin molding die 53 (51) to form at least one of the first resin thick film 26 and the second resin thick film 30 on the base substrate 41. In this embodiment, the first resin thick film 26 is formed. In step S303, the molded product is taken out from the resin molding die 55 (51) to obtain the wafer product 40i.

[0112] like Fig.21 As shown, cavity CVTY can have Fig.17 The height of the metal thick film in each section 40 is shown to be uniform at its highest point.

[0113] In step S401, the wafer product 40e is placed in the resin molding die 57 (51). In step S402, molten resin is injected into the resin molding die 57 (51) to form at least one of the first resin thick film 26 and the second resin thick film 30 on the base substrate 41. In this embodiment, the first resin thick film 26 is formed. In step S403, the molded product is taken out from the resin molding die 55 (51) to obtain the wafer product 40i.

[0114] Fig. 22 Each of (a) to (d) is a diagram showing the dimensions of the cavity of an exemplary resin molding die 51 (53, 55, 57) in the production method of the present embodiment.

[0115] like Fig. 22 As shown in (a), the cavity CVTY can be defined to receive two adjacent segments 40. The flow of the resin can be provided in the arrangement direction of the adjacent segments 40. In the two adjacent segments 40, the stress of the resin is relaxed.

[0116] like Fig. 22 As shown in (b), it can be defined to receive four adjacent sections 40. In the four adjacent sections 40, the stress of the resin is relaxed.

[0117] like Fig. 22 As shown in (c), it can be defined to receive nine adjacent sections 40. In the nine adjacent sections 40, the stress of the resin is relaxed.

[0118] like Fig. 22 As shown in (d), it can be specified to receive a plurality of segments 40 arranged in one direction. The flow of the resin can be provided in the arrangement direction. In the segments 40 arranged in one row, the stress of the resin is relaxed.

[0119] Fig.23(a) and (b) are diagrams showing the width of an exemplary half-cut region in the method of manufacturing a semiconductor device of this embodiment and the width of a separation region for separation of a segment arrangement in a wafer product. Fig.23 (a), the width WHC of the half-cut region is smaller than the width WSP of the separation region. The first region 19b does not remain in the semiconductor device 11 thus manufactured. However, the reduced stress remains in the semiconductor device 11. Fig.23 In (b), the width WHC of the half-cut region is larger than the width WSP of the separation region. The semiconductor device 11 thus manufactured provides the first region 19b. In addition, the reduced stress remains in the semiconductor device 11.

[0120] Fig.24 (a) to (h) are diagrams showing exemplary configurations of a first region and a second region of a semiconductor device manufactured by the manufacturing method of this embodiment.

[0121] Reference Fig.24 (a) In the semiconductor device 11 manufactured by the above method, the first region 19b surrounds the second region 19c, thereby preventing the second region 19c from extending in two directions.

[0122] Reference Fig.24 (b) In the semiconductor device 11 manufactured by the above method, the first region 19b is disposed at two opposite edges 13k, which hinders the extension of the second region 19c in one direction and provides the flow of the resin in two directions.

[0123] Reference Fig.24 (c) In the semiconductor device 11 manufactured by the above method, the first region 19b is provided on three adjacent edges 13k and is adjacent to the second region 19c on three side surfaces, thereby preventing the second region 19c from extending in two directions.

[0124] Reference Fig.24 (d) In the semiconductor device 11 manufactured by the above method, the first region 19b is provided at two adjacent edges 13k and is adjacent to the second region 19c on both side surfaces, thereby preventing the second region 19c from extending in both directions.

[0125] Reference Fig.24 (e) In the semiconductor device 11 manufactured by the above method, the first region 19b is partially provided on two opposite edges 13k and is adjacent to the second region 19c on two opposite side surfaces, thereby preventing the second region 19c from extending widely in one direction.

[0126] Reference Fig.24(f) In the semiconductor device 11 manufactured by the above method, the first region 19b is partially divided and provided at two opposite edges 13k, sandwiching the second region 19c. Thus, the extension of the second region 19c can be hindered in one section, and a route for resin flow in two directions can be provided.

[0127] Reference Fig.24 (g) In the semiconductor device 11 manufactured by the above method, the first regions 19b are provided at four corners in a mutually separated manner, sandwiching the second region 19c. Thus, the extension of the second region 19c can be hindered in one section, and a route for the resin to flow in two directions can be provided.

[0128] Reference Fig.24 (h), the semiconductor device 11 does not include the first region 19b, but only includes the second region 19c. The semiconductor device 11 of this method can be made by using a Fig. 22 (c) The molded product of the resin molding mold of the cavity is provided, and further by performing the following steps Fig.23 The semiconductor device 11 has reduced stress.

[0129] Fig.25 (a), (b), (c), and (d) are diagrams schematically showing various CSP assemblies produced by the production method of this embodiment.

[0130] like Fig.13 As shown, the wafer product 40g is separated into segments 40 to form a CSP assembly. Thus, a CSP assembly 46 is produced.

[0131] Reference Fig.25 From (a) to (d), the semiconductor device 11 includes a CSP assembly 46. In the CSP assembly 46, the resin structure 24 is provided on the semiconductor chip. The first resin body 19 is provided on the semiconductor chip, specifically, on the front side of the semiconductor chip. In addition, the second resin body 25 is provided on the semiconductor chip, specifically, on the back side of the semiconductor chip.

[0132] like Fig.25 As shown in (a) to (d) of FIG. 1 , a CSP assembly 46 includes a semiconductor chip 47 including a semiconductor element in a segment 40 and a resin package 49 disposed on the semiconductor chip 47. The resin package 49 includes a resin structure 24 disposed on the semiconductor chip 47 in a manner that does not cover the side surface 13s of the edge 13k of the support body 13 of the semiconductor chip 47.

[0133] The resin package 49 can include a first encapsulation resin body 49b that covers the semiconductor element on the front surface of the semiconductor chip 47. The resin package 49 can include a second encapsulation resin body 49c that covers the back surface of the semiconductor chip 47.

[0134] Reference Fig.25 (a) and (c), the first encapsulating resin body 49b includes a first region 19b, such as Fig.24 (a) to (g) are shown in Figure 2. Fig.25 (b) and (d), the first encapsulating resin body 49b does not include the first region 19b, as Fig.24 As shown in (h).

[0135] It should be understood from the above description that Fig.25 The first encapsulating resin body 49 b in (a) to (d) can be formed of the first resin thick film 26 . Fig.25 The second encapsulating resin body 49 c in (b) and (c) can be formed of the second resin thick film 30 .

[0136] like Fig.25 As shown in (b) and (c) of FIG. 1 , the semiconductor chip 47 is provided between the first encapsulating resin body 49 b and the second encapsulating resin body 49 c .

[0137] This embodiment can have various aspects shown below.

[0138] The semiconductor device of the first aspect of the present embodiment comprises: a supporting body having a first main surface and a second main surface on the opposite side of the first main surface, and one or more semiconductor elements; at least one thin-film metal electrode arranged on the first main surface of the supporting body; a thick-film metal body arranged on the thin-film metal electrode; and a resin structure arranged on the supporting body, the thickness of the thick-film metal body being greater than the thickness of the thin-film metal electrode, the resin structure including a first resin body covering the side surface of the thick-film metal body on the first main surface of the supporting body, the resin structure having at least one of the following structures 1 and 2: Structure 1: the resin structure also includes a second resin body arranged on the second main surface of the supporting body; and Structure 2: the resin structure provides the first resin body with a first region and a second region thicker than the first region on the first main surface of the supporting body.

[0139] In the second aspect of the present embodiment according to the first aspect, the supporting body further has an edge, the edge defines the first main surface of the supporting body, the resin structure includes the first resin body and the second resin body, the first resin body includes the first region and the second region, and the first resin body and the second resin body may not cover the side of the edge of the supporting body.

[0140] In the third aspect of the present embodiment according to the first aspect, the supporting body further has an edge, the edge defines the first main surface of the supporting body, the resin structure includes the first resin body and the second resin body, the first resin body does not include the first region and the second region, and the first resin body and the second resin body do not cover the side of the edge of the supporting body.

[0141] In a fourth aspect according to the first aspect of the present embodiment, the resin structure does not include the second resin body, and the first resin body can include the first region and the second region.

[0142] In the fifth aspect of the present embodiment according to any one of the first aspect to the fourth aspect, the first main surface of the supporting body is defined by a first edge and a second edge extending in a first direction, and a third edge and a fourth edge extending in a second direction intersecting the first direction, and the first region of the first resin body can be set at at least one of the first edge, the second edge, the third edge and the fourth edge.

[0143] In a sixth aspect of the present embodiment according to any one of the first to fifth aspects, the first region may have a closed shape surrounding the second region.

[0144] The method for manufacturing a semiconductor device according to the seventh aspect of the present embodiment comprises: preparing a base substrate having a first main surface and a second main surface on the opposite side of the first main surface, and an arrangement of multiple sections including semiconductor elements in the first main surface, and including a semiconductor; forming a thin film metal electrode on the first main surface in each of the sections of the base substrate; forming a chip product, wherein a metal thick film is formed on the first main surface in each of the sections of the base substrate to form the chip product, and the metal thick film is located on the thin film metal electrode; and forming a resin body including at least one resin thick film on the base substrate of the chip product, the thickness of the metal thick film being greater than the thickness of the thin film metal electrode, the resin body including a first resin thick film covering at least one side of the metal thick film on the first main surface of the base substrate, the resin body having at least one of the following structures 1 and 2: Structure 1: the resin body also includes a second resin thick film arranged on the second main surface of the base substrate; and Structure 2: the resin body provides the first resin thick film with a first region constituting at least one of a depression and a groove and a second region thicker than the first region on the first main surface of the base substrate.

[0145] In the method according to the seventh aspect or the eighth aspect of the present embodiment, the recess and the groove of the resin body can be formed by half-cutting a resin film formed in forming the resin body on the base substrate.

[0146] In the method of the ninth aspect according to the eighth aspect of the present embodiment, half-cutting of the resin film can be performed in the boundary of the segment of the arrangement.

[0147] In the method of the tenth aspect according to the eighth aspect or the ninth aspect of the present embodiment, the arrangement has a plurality of boundaries dividing the adjacent sections, and the resin film can be half-cut along at least one of the boundaries to form the groove.

[0148] In the method of the eleventh aspect according to the eighth aspect of the present embodiment, forming a resin body on the base substrate of the chip product can include: configuring the chip product in a resin molding mold having at least one cavity; and forming the resin body on the base substrate using the resin molding mold.

[0149] In the method of the twelfth aspect according to the eleventh aspect of the present embodiment, the resin molding die has a vertical wall configured to define the cavity, and the vertical wall can form the recess or the groove provided in the first resin thick film.

[0150] In the method of the thirteenth aspect according to the eleventh aspect or the twelfth aspect of the present embodiment, the cavity can be configured to receive a plurality of adjacent segments of the arranged segments.

[0151] In the method of the fourteenth aspect according to the eleventh aspect or the twelfth aspect of the present embodiment, the cavity can be provided in each of the sections of the arrangement.

[0152] In the method of a fifteenth aspect according to any one of the eleventh to fourteenth aspects of the present embodiment, the resin body can be formed on the first main surface of the base substrate in the resin molding die.

[0153] In the method of a sixteenth aspect according to any one of the eleventh to fifteenth aspects of the present embodiment, the resin body can be formed on the second main surface of the base substrate in the resin molding die.

[0154] The method of aspect 17 of the present embodiment according to any one of aspects 8 to 16 further comprises: grinding the resin thick film and the metal thick film, forming a thick film resin body and a thick film metal body from the resin thick film and the metal thick film respectively, the metal thick film, the thin film metal electrode and the base substrate are arranged in the direction of a first axis, and the upper surface of the metal thick film and the upper surface of the resin thick film can extend along a reference plane intersecting the first axis.

[0155] The method of the eighteenth aspect according to the seventeenth aspect of the present embodiment also comprises: after grinding the resin thick film and the metal thick film, separating the arrangement of the segments to form a CSP assembly including a semiconductor chip and a resin package on the semiconductor chip, the semiconductor chip including the semiconductor element within the segment, the resin package including a resin structure arranged on the semiconductor chip in a manner not covering the side of the edge of the semiconductor chip, the resin structure including a first resin body covering at least the side of the metal thick film on the first main surface of the semiconductor chip.

[0156] The present invention is not limited to the above-described embodiments, and can be implemented with various modifications within the scope of the present invention. Moreover, all of these modifications are included in the technical concept of the present invention.

[0157] Description of Reference Numerals 11…Semiconductor devices, 13…support body, 13b…first main surface, 13c…second main surface, 13d…Component area, 13e…surrounding areas, 13k, 13k1 to 13k4... edge, 13s, 17b…side, 14…Component structure, 15…Thin film metal electrode, 17...thick film metal body, 17c…upper surface, 18…Metal thick film, 19…a first resin body, 19b…First area, 19c…Second area, 19d…upper surface, 20…resin thick film, 21…Insulation layer, 22b…open mouth, 23 ... a second inorganic insulating film, 23b…open mouth, 24…resin structure, 25…resin body, 26…resin thick film, 26b…First area, 26c…Second area, 28…Structure, 30…resin thick film, 31…Semiconductor components, 33…Insulation structure, 40…section, 40a, 40b~40i... chip products, 41…base substrate, 42b…first main surface, 42c…second main surface, 43…Semiconductor components, 45…Support plate, 46…CSP assembly, 47…Semiconductor chips, 49…resin encapsulation, 49b ... a first encapsulating resin body, 49c ... a second encapsulating resin body, 51, 53, 55, 57…resin molding molds, 100…methods, Ax1…first axis.

Claims

1. A semiconductor device, wherein: have: A support having a first main surface, a second main surface opposite to the first main surface, and one or more semiconductor elements; at least one thin-film metal electrode disposed on the first main surface of the support body; A thick film metal body is disposed on the thin film metal electrode; as well as A resin structure is disposed on the support body, The thickness of the thick film metal body is greater than the thickness of the thin film metal electrode, The resin structure includes a first resin body covering the side surface of the thick-film metal body on the first main surface of the support body, The resin structure has at least one of the following structures 1 and 2: Structure 1: The resin structure further includes a second resin body provided on the second main surface of the support body; and Structure 2: The resin structure provides the first resin body with a first region and a second region thicker than the first region on the first main surface of the support.

2. The semiconductor device according to claim 1, wherein The support further comprises an edge, wherein the edge defines the first main surface of the support, The resin structure includes the first resin body and the second resin body, The first resin body includes the first region and the second region, The first resin body and the second resin body do not cover the side surfaces of the edge of the support body.

3. The semiconductor device according to claim 1, wherein The support further comprises an edge, wherein the edge defines the first main surface of the support, The resin structure includes the first resin body and the second resin body, The first resin body does not include the first region and the second region, The first resin body and the second resin body do not cover the side surfaces of the edge of the support body.

4. The semiconductor device according to claim 1, wherein The resin structure does not include the second resin body, The first resin body includes the first region and the second region.

5. The semiconductor device according to claim 4, wherein: The first main surface of the support body is defined by a first edge and a second edge extending in a first direction, and a third edge and a fourth edge extending in a second direction intersecting the first direction. The first region of the first resin body is provided at at least one edge among the first edge, the second edge, the third edge, and the fourth edge.

6. The semiconductor device according to claim 2 or 4, wherein: The first region has a closed shape so as to surround the second region.

7. A method for manufacturing a semiconductor device, wherein: have: preparing a base substrate having a first main surface and a second main surface on the opposite side of the first main surface, and an arrangement of a plurality of sections including semiconductor elements in the first main surface, and including a semiconductor; forming a thin film metal electrode on the first major surface in each of the segments of the base substrate; forming a wafer product, wherein the wafer product is formed by forming a metal thick film on the first main surface in each of the sections of the base substrate, the metal thick film being located on the thin film metal electrode; as well as forming a resin body including at least one resin thick film on the base substrate of the wafer product, The thickness of the metal thick film is greater than the thickness of the thin film metal electrode, The resin body includes a first resin thick film covering at least a side surface of the metal thick film on the first main surface of the base substrate. The resin body has at least one of the following structures 1 and 2: Structure 1: the resin body further includes a second resin thick film provided on the second main surface of the base substrate; and Structure 2: The resin body provides the first resin thick film with a first region constituting at least one of a depression and a groove and a second region thicker than the first region on the first main surface of the base substrate.

8. The method for manufacturing a semiconductor device according to claim 7, wherein: The recess and the groove of the resin body are formed by half-cutting a resin film formed when the resin body is formed on the base substrate.

9. The method for manufacturing a semiconductor device according to claim 8, wherein: The half-cutting of the resin film is performed in the boundaries of the segments of the arrangement.

10. The method for manufacturing a semiconductor device according to claim 8, wherein: The arrangement has a plurality of boundaries dividing adjacent segments, The resin film is half-cut along at least one of the boundaries to form the groove.

11. The method for manufacturing a semiconductor device according to claim 8, wherein: Forming a resin body on the base substrate of the wafer product includes: placing the wafer product in a resin molding die having at least one cavity; and The resin body is formed on the base substrate using the resin molding die.

12. The method for manufacturing a semiconductor device according to claim 11, wherein: The resin molding die has a vertical wall configured to define the cavity. The vertical wall forms the recess or the groove provided in the first resin thick film.

13. The method for manufacturing a semiconductor device according to claim 11, wherein: The cavity is configured to receive adjacent ones of the segments of the array.

14. The method for manufacturing a semiconductor device according to claim 11, wherein: The cavity is provided in each of the sections of the arrangement.

15. The method for manufacturing a semiconductor device according to claim 11, wherein: In the resin molding die, the resin body is formed on the first main surface of the base substrate.

16. The method for manufacturing a semiconductor device according to claim 15, wherein: In the resin molding die, the resin body is formed on the second main surface of the base substrate.

17. The method for manufacturing a semiconductor device according to any one of claims 8 to 16, wherein: The method further comprises: grinding the resin thick film and the metal thick film to form a thick film resin body and a thick film metal body from the resin thick film and the metal thick film, respectively; The metal thick film, the thin film metal electrode and the base substrate are arranged in the direction of a first axis, An upper surface of the metal thick film and an upper surface of the resin thick film extend along a reference plane intersecting the first axis.

18. The method for manufacturing a semiconductor device according to claim 17, wherein: The method further comprises: after grinding the resin thick film and the metal thick film, separating the arrangement of the segments to form a CSP assembly including a semiconductor chip and a resin package on the semiconductor chip, wherein the semiconductor chip includes the semiconductor element in the segment, The resin package includes a resin structure provided on the semiconductor chip in a manner not to cover the side surface of the edge of the semiconductor chip. The resin structure includes a first resin body covering at least a side surface of the metal thick film on the first main surface of the semiconductor chip.

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