Silicon-based OLED device and preparation method thereof
By adopting inverted trapezoidal undercut structure and dry and wet etching process in silicon-based OLED devices, the limitations in color gamut, brightness and resolution in the prior art are solved, and efficient and low-cost silicon-based OLED devices are achieved.
Patent Information
- Application Number
- CN202411527458.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-29
- Publication Date
- 2025-02-25
AI Technical Summary
Existing silicon-based Micro OLED devices have limitations in color gamut, brightness, power consumption and resolution, which are mainly caused by the preparation process of white light OLED plus color filters.
A new silicon-based OLED device preparation method is adopted, including preparing a driving circuit and a patterned anode on the base, depositing a pixel definition layer and forming an inverted trapezoidal undercut structure by dry etching, forming an RGB pixel layer in sequence and removing the excess layers by etching, and removing the excess pixel layer by wet etching.
It realizes silicon-based OLED devices with high color gamut, high brightness, low power consumption and high resolution, with a resolution of more than 5000PPI, with a simple structure and low cost.
Smart Images
Figure CN119521954A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of display technology, and in particular to a silicon-based OLED device and a preparation method thereof. Background Art
[0002] Organic Light Emitting Diode (OLED) displays have the advantages of low energy consumption, self-luminescence, wide viewing angle and fast response speed. They are one of the hot topics in the current display research field and are considered to be the next generation of display technology. Silicon-based organic light-emitting diode microdisplays (Micro OLED) have great advantages in the field of near-eye displays due to their high color gamut, low power consumption and heat generation, high resolution, high contrast, high refresh rate, simple structure, small size and good portability. At present, due to the limitations of the evaporation process, the main method of preparing Micro OLED is to use white light OLED plus color filter (CF). Compared with direct RGB light-emitting products, white light OLED+CF products have the following disadvantages: 1. Low color gamut. Due to the use of color filters, the color gamut is limited by CF and is not as high as that of direct RGB; 2. Low brightness, high power consumption and heat generation. Because the filtering effect of CF will cause 60% light loss, the light utilization rate is only ~30%, so the brightness is low, and the power consumption and heat generation will also increase accordingly; 3. The resolution is low. Limited by the poor resolution of CF, it is difficult to make the key dimensions smaller. The resolution of white light OLED+CF products can generally only reach about 3000PPI, and it is difficult to continue to increase; 4. The structure and process are complex and the cost is high. Due to the additional addition of CF, the device structure has more layers and the process is more complex. It is necessary to develop low-temperature CF materials and processes, so the cost is relatively high.
[0003] Therefore, a new silicon-based OLED device and a preparation method thereof are needed. Summary of the invention
[0004] In order to solve the problems existing in the prior art, the present invention provides a silicon-based OLED device and a preparation method thereof.
[0005] The present invention provides a method for preparing a silicon-based OLED device, comprising the following steps: providing a base, the base comprising a first region, a second region and a third region; preparing a driving circuit and a patterned anode on the base; depositing a pixel definition layer to cover the patterned anode and the base; etching the pixel definition layer using a dry etching process to form an undercut structure, the cross-sectional shape of the undercut structure being an inverted trapezoid; sequentially forming a first pixel layer, a cathode and a packaging layer on one side of the undercut structure; sequentially removing the packaging layer, the cathode and the first pixel layer at the second region and the third region on one side of the undercut structure by etching; sequentially forming a second pixel layer, a cathode and a packaging layer at the second region and the third region on one side of the undercut structure; sequentially removing the packaging layer, the cathode and the second pixel layer at the third region on one side of the undercut structure by etching; and sequentially forming a third pixel layer, a cathode and a packaging layer at the third region on one side of the undercut structure.
[0006] Optionally, the dry etching conditions for etching the pixel definition layer using a dry etching process include: a pressure range of 5-100mT, a power range of 100-2000W, an Ar flow range of 10-200sccm, an etching gas of CF4, CHF3, Cl2 or O2, and an etching gas flow range of 10-200sccm.
[0007] Optionally, the dry etching conditions for etching the pixel definition layer using a dry etching process include: a pressure range of 5-200mT, a power range of 500-2000W, an Ar flow range of 10-200sccm, an etching gas of CF4, CHF3, Cl2 or O2, and an etching gas flow range of 20-200sccm.
[0008] Optionally, the method of sequentially removing the encapsulation layer, cathode and first pixel layer in the second area and third area on one side of the undercut structure by etching includes the steps of: removing the cathode and encapsulation layer in the second area and third area on one side of the undercut structure by dry etching; and removing the first pixel layer in the second area and third area on one side of the undercut structure by wet etching.
[0009] Optionally, the method of sequentially removing the encapsulation layer, the cathode and the second pixel layer in the third area on one side of the undercut structure by etching includes the steps of: removing the cathode and the encapsulation layer in the third area on one side of the undercut structure by dry etching; and removing the second pixel layer in the third area on one side of the undercut structure by wet etching.
[0010] Optionally, the dry etching conditions include: a pressure range of 5-50mT, a power range of 100-2000W, an Ar flow range of 10-200sccm, an etching gas of CF4, CHF3, Cl2 or O2, and an etching gas flow range of 10-100sccm.
[0011] Optionally, the etching solution used in the wet etching includes an organic solvent.
[0012] The present invention also provides a silicon-based OLED device, comprising: a base, and a driving circuit and a patterned anode located on the base; a pixel definition layer covering the base, the pixel definition layer comprising an undercut structure, and the cross-sectional shape of the undercut structure is an inverted trapezoid; a first pixel layer, a second pixel layer and a third pixel layer, the first pixel layer, the second pixel layer and the third pixel layer respectively covering different areas of the pixel definition layer; a cathode and an encapsulation layer covering the first pixel layer, the second pixel layer and the third pixel layer.
[0013] Optionally, the material of the pixel definition layer includes at least one of silicon oxide, silicon nitride, silicon oxynitride, and silicon carbide.
[0014] Optionally, the driving circuit includes a thin film transistor.
[0015] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:
[0016] The present invention provides a silicon-based OLED device and a preparation method thereof. By etching a pixel definition layer to form an undercut structure, when forming a pixel layer, the undercut pixel definition layer is used to protect the OLED material on the pixel from being damaged; at the same time, in the preparation method of the silicon-based OLED device of the present invention, a dry etching process is used to remove the cathode and the encapsulation layer, which can improve the etching accuracy, and a wet etching process is used to remove the redundant pixel layer, so that the anode is less damaged and the OLED is removed cleanly. The real RGB Micro OLED prepared by the preparation method provided by the present invention has a high color gamut, high brightness, low power consumption and heat generation, high resolution and simple structure. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
[0018] Figure 1 This is a schematic diagram of a process for preparing a silicon-based OLED device according to an embodiment of the present disclosure;
[0019] Figure 2 It is a schematic diagram of an intermediate structure of a preparation process of a silicon-based OLED device according to an embodiment of the present disclosure;
[0020] Figure 3 A schematic structural diagram of an undercut pixel definition layer structure of a silicon-based OLED device according to an embodiment of the present disclosure;
[0021] Figure 4 It is a schematic structural diagram of an undercut pixel definition layer structure of a silicon-based OLED device according to another embodiment of the present disclosure. DETAILED DESCRIPTION
[0022] The preferred embodiments of the present invention will be described in more detail below. Although the preferred embodiments of the present invention are described below, it should be understood that the present invention can be implemented in various forms and should not be limited to the embodiments set forth herein.
[0023] In the present invention, unless otherwise specified, the directional words used, such as "upper and lower", generally refer to the upper and lower parts of the device in normal use, and "inside and outside" refer to the outline of the device. In addition, the terms "first, second, third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first, second, third" may explicitly or implicitly include one or more of the features. In the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined. In the present invention, it is an electrical device, so connection and interconnection both refer to conductive interconnection. Since the accompanying drawings are descriptions of the same device, the same numbers in the drawings represent the same components.
[0024] As described in the background art, the traditional real RGB solution has a complex preparation process, and the etching process used will damage the organic material and the anode, and the reliability is poor. Therefore, the present application provides a new silicon-based OLED device and a preparation method thereof to solve the above problems.
[0025] The present invention proposes a method for preparing a silicon-based OLED device, comprising the following steps: providing a base, wherein the base comprises a first region, a second region and a third region; preparing a driving circuit and a patterned anode on the base; depositing a pixel definition layer to cover the patterned anode and the base; etching the pixel definition layer using a dry etching process to form an undercut structure, wherein the cross-sectional shape of the undercut structure is an inverted trapezoid; sequentially forming a first pixel layer, a cathode and an encapsulation layer on one side of the undercut structure; sequentially removing the encapsulation layer, the cathode and the first pixel layer at the second region and the third region on one side of the undercut structure by etching; sequentially forming a second pixel layer, a cathode and an encapsulation layer at the second region and the third region on one side of the undercut structure; sequentially removing the encapsulation layer, the cathode and the second pixel layer at the third region on one side of the undercut structure by etching; and sequentially forming a third pixel layer, a cathode and an encapsulation layer at the third region on one side of the undercut structure.
[0026] In order to further understand the purpose, structure, features and functions of the present invention, the specific examples of the present invention are further described in detail below in conjunction with the accompanying drawings. It should be noted that the substances not listed in detail in the embodiments can be selected as any substances on the market that can achieve the corresponding functions.
[0027] This embodiment provides a method for preparing a silicon-based OLED device. Figure 1 , the method for preparing the silicon-based OLED device comprises the steps of:
[0028] S1: providing a base, wherein the base comprises a first area, a second area and a third area.
[0029] In the embodiment of the present disclosure, the base is made of silicon material. A high-purity silicon wafer is selected as the base, and the silicon wafer is cleaned and surface treated before the subsequent preparation process.
[0030] S2: preparing a driving circuit and a patterned anode on the base.
[0031] Specifically, a driving circuit is fabricated on a silicon wafer using photolithography technology, and the driving circuit includes components such as thin film transistors (TFTs). Then, an anode material is deposited using chemical vapor deposition (CVD) or physical vapor deposition (PVD) technology; then, Figure 2 As shown, the anode is patterned to achieve precise electrical contact.
[0032] In some embodiments, the anode material includes indium tin oxide (ITO) or other conductive materials.
[0033] S3: depositing a pixel definition layer, covering the patterned anode and the base.
[0034] In the embodiment of the present disclosure, specifically, the pixel definition layer material is deposited on the base using chemical vapor deposition, physical vapor deposition or spin coating technology.
[0035] In some embodiments, the material of the pixel definition layer may be one or a stacked structure of several materials selected from silicon oxide, silicon nitride, silicon oxynitride and silicon carbide.
[0036] S4: etching the pixel definition layer using a dry etching process to form an undercut structure, wherein the cross-sectional shape of the undercut structure is an inverted trapezoid.
[0037] Specifically, a layer of photoresist is coated on the pixel definition layer, and a pattern is exposed using photolithography technology. The photoresist in a specific area is solidified through a mask, and then the unexposed photoresist is removed to form a patterned photoresist. Next, the pixel definition layer is etched through the shielding of the patterned photoresist to form an undercut structure on the image definition layer, that is, the width of the pixel definition layer away from the anode is greater than the width of the pixel definition layer close to the anode. Figure 3 As shown, the cross-section of the formed undercut structure is an inverted trapezoidal cross-section, and the side away from the anode is wider than the side close to the anode; the undercut structure helps to protect the subsequently deposited OLED material and can protect the OLED material on the pixel from being damaged by etching during the etching process.
[0038] In different embodiments, the process parameters of dry etching can be adjusted so that the etching rate on the side away from the anode is slow and the etching rate on the side close to the anode is fast, thereby achieving an inverted trapezoidal cross-sectional shape of the undercut structure.
[0039] In the embodiments of the present disclosure, refer to Figure 3 , the pixel definition layer is a single-layer structure, that is, the material of the pixel definition layer is one of silicon oxide, silicon nitride, silicon oxynitride, and silicon carbide. The process conditions for realizing dry etching of the undercut structure include: a pressure range of 5-100mT, a power range of 100-2000W, an Ar flow range of 10-200sccm, and an etching gas of CF4, CHF3, Cl2 or O2, and a flow range of the etching gas of 10-200sccm.
[0040] like Figure 4 As shown, in another embodiment, if the pixel definition layer is a stacked structure, for example, the material of the pixel definition layer is a stack of silicon oxide and silicon nitride, or a stack of silicon nitride and silicon oxynitride, etc., the process conditions of the etching process include: a pressure range of 5-100mT, a power range of 100-2000W, an Ar flow range of 10-200sccm, the etching gas uses CF4, CHF3, Cl2 or O2, and the etching gas flow range is 10-200sccm.
[0041] Afterwards, the photoresist is stripped by a stripping machine. In some embodiments, a stripping liquid is used to strip the patterned photoresist. The stripping time ranges from 100 to 1000 seconds and the temperature ranges from 30 to 80°C.
[0042] S5: forming a first pixel layer, a cathode and an encapsulation layer in sequence on one side of the undercut structure.
[0043] After the undercut structure is formed, red, green and blue (RGB) organic light emitting layers are deposited on the undercut structure.
[0044] Specifically, in the embodiment of the present disclosure, a first pixel layer is deposited on the undercut structure formed by the pixel definition layer by vacuum evaporation or organic chemical vapor deposition technology, and the first pixel layer is a red organic light-emitting layer. Then, a cathode material is deposited on the first pixel layer by metal evaporation or sputtering technology. Then, an encapsulation layer is deposited on the cathode material.
[0045] In some embodiments, the cathode material may be aluminum or silver, and the encapsulation layer may include a thin film encapsulation (TFE) layer, typically combining inorganic and organic layers to protect the OLED material from moisture and oxygen.
[0046] S6: removing the encapsulation layer, the cathode and the first pixel layer in the second region and the third region on one side of the undercut structure in sequence by etching.
[0047] A layer of photoresist is coated on the encapsulation layer, and an exposure process is performed using a photolithography technique so that only the photoresist in the first area is solidified. The encapsulation layer, the cathode, and the first pixel layer in the second area and the third area of the undercut structure are removed by shielding with the solidified photoresist. Thereafter, the unexposed photoresist is removed to form a first pixel layer in the first area.
[0048] In the embodiment of the present disclosure, the method of sequentially removing the encapsulation layer, the cathode and the first pixel layer in the second area and the third area on one side of the undercut structure by etching includes the steps of: removing the cathode and the encapsulation layer in the second area and the third area on one side of the undercut structure by dry etching; and removing the first pixel layer in the second area and the third area on one side of the undercut structure by wet etching.
[0049] Specifically, dry etching is first used to etch the encapsulation layer and cathode of the second region and the third region. The conditions of the dry etching include: a pressure range of 5-50mT, a power range of 100-2000W, an Ar flow range of 10-200sccm, and an etching gas of CF4, CHF3, Cl2 or O2, and an etching gas flow range of 10-100sccm. Through the dry etching process, the loss of critical dimensions can be reduced, and the fine structure of the design can be better maintained. Afterwards, the remaining organic materials in the second region and the third region, that is, the first pixel layer of the second region and the third region, are removed by wet method. The etching solution used in the wet etching includes organic solvents such as ethanol, N-methylpyrrolidone, acetone or propylene glycol methyl ether acetate. The time range of immersion and dissolution is 100-3000s, and the temperature range is 30-80°C, followed by spin drying or nitrogen drying. In the embodiment of the present disclosure, only organic solvents are used in the process of removing the first pixel layer through a wet etching process, and no water is used, so that the surface of the anode is less damaged and the organic material can be completely removed.
[0050] S7: forming a second pixel layer, a cathode and an encapsulation layer in sequence at the second region and the third region on one side of the undercut structure.
[0051] Similar to the formation process of the first pixel layer, a second pixel layer is deposited at the second region and the third region on one side of the undercut structure by vacuum evaporation or organic chemical vapor deposition technology, and the second pixel layer is a green organic light-emitting layer. Afterwards, a cathode material is deposited on the second pixel layer by metal evaporation or sputtering technology. Next, an encapsulation layer is deposited on the cathode material.
[0052] S8: removing the encapsulation layer, the cathode and the second pixel layer in the third region on one side of the undercut structure in sequence by etching.
[0053] In the embodiment of the present disclosure, the method of sequentially removing the encapsulation layer, the cathode and the second pixel layer in the third area position on one side of the undercut structure by etching includes the steps of: removing the cathode and the encapsulation layer in the third area position on one side of the undercut structure by dry etching; and removing the second pixel layer in the third area position on one side of the undercut structure by wet etching.
[0054] Specifically, dry etching is first used to etch the encapsulation layer and cathode of the third region. The conditions of the dry etching include: a pressure range of 5-50mT, a power range of 100-2000W, an Ar flow range of 10-200sccm, and an etching gas of CF4, CHF3, Cl2 or O2, and an etching gas flow range of 10-100sccm. Through the dry etching process, the loss of critical dimensions can be reduced, and the fine structure of the design can be better maintained. Afterwards, the second pixel layer of the third region is removed by wet method. The etching solution used in the wet etching includes organic solvents such as ethanol, N-methylpyrrolidone, acetone or propylene glycol methyl ether acetate. The soaking and dissolving time range is 100-3000s, the temperature is 30-80°C, and then it is dried or blown dry with nitrogen. In the embodiment disclosed in the present invention, the wet etching process only uses organic solvents, and does not use water, so that the surface of the anode is less damaged, and the organic material can be removed cleanly at the same time.
[0055] S9: forming a third pixel layer, a cathode and an encapsulation layer in sequence at a third region position on one side of the undercut structure.
[0056] Similar to the formation process of the first pixel layer and the second pixel layer, a third pixel layer is deposited at the third region position on the undercut structure by vacuum evaporation or organic chemical vapor deposition technology, and the third pixel layer is a blue organic light-emitting layer. Afterwards, a cathode material is deposited on the third pixel layer by metal evaporation or sputtering technology. Next, an encapsulation layer is deposited on the cathode material. By forming an RGB direct light-emitting pixel layer on the pixel definition layer, an RGB direct light-emitting Micro OLED is formed.
[0057] In some embodiments, high-resolution photoresist can be used to prepare graphic RGB pixels, avoiding the use of color photoresist with poor resolution, so that the resolution can be greater than 5000 PPI, or even 10000 PPI.
[0058] In the embodiment of the present disclosure, the first pixel layer is a red pixel, the second pixel layer is a green pixel, and the third pixel layer is a blue pixel; in another embodiment, the first pixel layer is a green pixel, the second pixel layer is a red pixel, and the third pixel layer is a blue pixel; in yet another embodiment, the first pixel layer is a blue pixel, the second pixel layer is a red pixel, and the third pixel layer is a green pixel. In different embodiments, the first pixel layer, the second pixel layer, and the third pixel layer can be one of red pixels, green pixels, and blue pixels, respectively, and the embodiment of the present disclosure is not limited to this.
[0059] The present invention provides a method for preparing a silicon-based OLED device, which has a simple process and can realize the preparation of RGB direct-light-emitting Micro OLED by only three exposure and etching processes. The photolithography, etching and degumming steps of each sub-pixel (R, G, B) are repeated to ensure that organic materials of different colors are processed to their respective pixel areas. At the same time, precise photolithography and etching technologies are combined to ensure high resolution and high quality of the final display.
[0060] The present invention also provides a silicon-based OLED device, comprising: a base, and a driving circuit and a patterned anode located on the base; a pixel definition layer covering the base, the pixel definition layer comprising an undercut structure, and the cross-sectional shape of the undercut structure is an inverted trapezoid; a first pixel layer, a second pixel layer and a third pixel layer, the first pixel layer, the second pixel layer and the third pixel layer respectively covering different areas of the pixel definition layer; a cathode and an encapsulation layer covering the first pixel layer, the second pixel layer and the third pixel layer.
[0061] The silicon-based OLED device and preparation method provided by the present invention form an undercut structure by etching the pixel definition layer. When forming the pixel layer, the undercut pixel definition layer is used to protect the OLED material on the pixel from being damaged. At the same time, the preparation method of the silicon-based OLED device of the present invention adopts a dry etching process to remove the cathode and the encapsulation layer, which can improve the etching accuracy. The wet etching process is used to remove the redundant pixel layer, the anode is less damaged, and the OLED is removed cleanly. The realRGB Micro OLED prepared by the preparation method provided by the present invention has a high color gamut, high brightness, low power consumption and heat generation, high resolution, and a simple structure.
[0062] The above descriptions are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structural or equivalent process transformations made using the contents of the specification and drawings of the present application, such as the mutual combination of technical features between the embodiments, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A method for preparing a silicon-based OLED device, characterized in that: Includes steps: Providing a base, the base comprising a first area, a second area, and a third area; preparing a driving circuit and a patterned anode on the base; depositing a pixel definition layer covering the patterned anode and the base; The pixel definition layer is etched by a dry etching process to form an undercut structure, wherein the cross-sectional shape of the undercut structure is an inverted trapezoid; forming a first pixel layer, a cathode and an encapsulation layer in sequence on one side of the undercut structure; Sequentially removing the encapsulation layer, the cathode and the first pixel layer at the second area and the third area on one side of the undercut structure by etching; Sequentially forming a second pixel layer, a cathode and an encapsulation layer at the second region and the third region on one side of the undercut structure; Sequentially removing the encapsulation layer, the cathode and the second pixel layer at the third region on one side of the undercut structure by etching; A third pixel layer, a cathode and a packaging layer are sequentially formed at a third region position on one side of the undercut structure.
2. The method for preparing a silicon-based OLED device according to claim 1, wherein: The dry etching conditions for etching the pixel definition layer using a dry etching process include: a pressure range of 5-100mT, a power range of 100-2000W, an Ar flow range of 10-200sccm, an etching gas of CF4, CHF3, Cl2 or O2, and an etching gas flow range of 10-200sccm.
3. The method for preparing a silicon-based OLED device according to claim 1, wherein: The dry etching conditions for etching the pixel definition layer using a dry etching process include: a pressure range of 5-200mT, a power range of 500-2000W, an Ar flow range of 10-200sccm, an etching gas of CF4, CHF3, Cl2 or O2, and an etching gas flow range of 20-200sccm.
4. The method for preparing a silicon-based OLED device according to claim 1, wherein: The method of sequentially removing the encapsulation layer, the cathode and the first pixel layer at the second area and the third area on one side of the undercut structure by etching comprises the following steps: removing the cathode and the encapsulation layer at the second region and the third region on one side of the undercut structure by dry etching; The first pixel layer at the second region and the third region on one side of the undercut structure is removed by wet etching.
5. The method for preparing a silicon-based OLED device according to claim 1, wherein: The method of sequentially removing the encapsulation layer, the cathode and the second pixel layer at the third region on one side of the undercut structure by etching comprises the following steps: removing the cathode and the encapsulation layer at the third region on one side of the undercut structure by dry etching; The second pixel layer at the third region on one side of the undercut structure is removed by wet etching.
6. The method for preparing a silicon-based OLED device according to claim 4 or 5, characterized in that: The dry etching conditions include: a pressure range of 5-50mT, a power range of 100-2000W, an Ar flow range of 10-200sccm, an etching gas of CF4, CHF3, Cl2 or O2, and an etching gas flow range of 10-100sccm.
7. The method for preparing a silicon-based OLED device according to claim 4 or 5, characterized in that: The etching solution used in the wet etching includes an organic solvent.
8. A silicon-based OLED device prepared by any one of claims 1 to 7, characterized in that: include: A base, and a driving circuit and a patterned anode located on the base; A pixel definition layer covering the base, the pixel definition layer comprising an undercut structure, and the cross-sectional shape of the undercut structure is an inverted trapezoid; a first pixel layer, a second pixel layer and a third pixel layer, wherein the first pixel layer, the second pixel layer and the third pixel layer respectively cover different areas of the pixel definition layer; A cathode and an encapsulation layer are covered on the first pixel layer, the second pixel layer and the third pixel layer.
9. The silicon-based OLED device according to claim 8, characterized in that: The material of the pixel definition layer includes at least one of silicon oxide, silicon nitride, silicon oxynitride, and silicon carbide.
10. The silicon-based OLED device according to claim 8, characterized in that: The driving circuit includes a thin film transistor.