Coaxial cable and semiconductor device testing apparatus

Abstract

The invention provides a coaxial cable capable of reducing reaction force. A coaxial cable (40A) includes an inner conductor (50A), an insulator (60) surrounding the inner conductor (50A), and an outer conductor (70A) surrounding the insulator (60). The inner conductor (50A) includes a base material (51) made of a first resin material, and a first conductor layer (55A) made of a first conductive material and surrounding the base material (51).

Description

Technical Field

[0001] The present invention relates to a coaxial cable and a semiconductor device testing device including the coaxial cable. Background Art

[0002] As a semiconductor device testing device for testing the electrical characteristics of various semiconductor devices (DUT) such as semiconductor integrated circuit elements, the following semiconductor device testing device is known, which comprises: a DSA having a test socket; a test head having a pin circuit; and a motherboard having a coaxial cable electrically connecting the DSA and the test head (for example, refer to patent document 1). Prior art literature Patent Literature

[0003] Patent Document 1: Japanese Patent Application Publication No. 2008-078048 Summary of the invention Problems to be solved by the invention

[0004] Since the inner conductor of the coaxial cable is made of a solid metal wire, which is made of a metal material such as copper, the rigidity of the coaxial cable is relatively high. In addition, in a semiconductor device test device, a wiring board and a coaxial cable are connected using a connector, and multiple coaxial cables are connected to one connector. In this case, the more coaxial cables there are, the stronger the reaction force from the coaxial cables is. Therefore, when assembling the motherboard, the coaxial cables may be forced in, resulting in poor connection such as disconnection.

[0005] In addition, in order to absorb mechanical errors when the connectors are mated, one connector (a connector to which a coaxial cable is connected) may have a sliding function to slide in a lateral direction (a direction orthogonal to the mating direction) relative to another connector (a connector mounted on a wiring board). If the number of coaxial cables connected to one connector increases, the sliding function may not function sufficiently due to a strong reaction force from the coaxial cables, resulting in a poor connection.

[0006] Furthermore, in the semiconductor device test apparatus described above, the connector is plugged in and out every time the type of DUT is changed. If the number of coaxial cables connected to one connector increases, the connector may be fitted in an inclined state due to the strong reaction force from the coaxial cables, and therefore sufficient connection reliability may not be ensured even after thousands of times of plugging and unplugging the connector.

[0007] An object of the present invention is to provide a coaxial cable capable of reducing the reaction force, and a semiconductor device test apparatus including the coaxial cable. Technical solutions to solve problems

[0008] [1] A first aspect of the present invention is a coaxial cable, wherein the coaxial cable comprises: an inner conductor; an insulator surrounding the inner conductor; and an outer conductor surrounding the insulator, wherein the inner conductor comprises: a central portion having a portion formed of a first resin material or a portion that is a hollow portion; and a first conductor layer formed of a first conductive material and surrounding the central portion.

[0009] [2] A second aspect of the present invention may be a coaxial cable according to the first aspect: in the coaxial cable, the first resin material has a Young's modulus smaller than a Young's modulus of the first conductive material.

[0010] [3] A third aspect of the present invention may be a coaxial cable according to the first or second aspect, wherein the first resin material has a thermal conductivity lower than a thermal conductivity of the first conductive material.

[0011] [4] A fourth aspect of the present invention may be a coaxial cable according to any one of aspects 1 to 3, wherein the first resin material has a density lower than that of the first conductive material.

[0012] [5] Aspect 5 of the present invention may be a coaxial cable according to any one of aspects 1 to 4, wherein the first conductor layer includes a first film or a first metal foil.

[0013] [6] Aspect 6 of the present invention may be a coaxial cable according to any one of aspects 1 to 5, wherein the first conductor layer has a thickness of 20 μm or less.

[0014] [7] A seventh aspect of the present invention may be a coaxial cable according to any one of aspects 1 to 6, wherein the central portion includes a base material formed of the first resin material, and the first conductor layer covers an outer peripheral surface of the base material.

[0015] [8] Aspect 8 of the present invention may be the following coaxial cable: in the coaxial cable of aspect 7, the ratio of the cross-sectional area of ​​the base material to the cross-sectional area of ​​the internal conductor is 50% or more.

[0016] [9] Mode 9 of the present invention may also be the following coaxial cable: in the coaxial cable of Mode 7 or 8, the first conductor layer includes a first film or a first metal foil, and the first film includes a plating layer or a coating formed on the outer peripheral surface of the base material.

[0017]

[10] Aspect 10 of the present invention may be the following coaxial cable: in any one of aspects 1 to 6, the central portion includes the cavity, and the first conductor layer covers the inner peripheral surface of the insulator.

[0018]

[11] Aspect 11 of the present invention may be a coaxial cable according to aspect 10, wherein a ratio of a cross-sectional area of ​​the cavity to a cross-sectional area of ​​the internal conductor is 50% or more.

[0019]

[12] Mode 12 of the present invention may also be the following coaxial cable: in the coaxial cable of mode 10 or 11, the first conductor layer includes a first film or a first metal foil, and the first film includes a plating layer or a coating formed on the inner peripheral surface of the insulator.

[0020]

[13] Mode 13 of the present invention may also be the following coaxial cable: in any one of modes 1 to 6, the central portion includes a strand assembly, the strand assembly has resin strands formed of the first resin material, and the first conductor layer covers the outer peripheral surface of the strand assembly.

[0021]

[14] A fourteenth aspect of the present invention may be a coaxial cable as follows: in the coaxial cable of the thirteenth aspect, a ratio of the cross-sectional area of ​​the resin strand to the cross-sectional area of ​​the inner conductor is 50% or more.

[0022]

[15] Mode 15 of the present invention may also be the following coaxial cable: in the coaxial cable of mode 13 or 14, the first conductor layer includes a first film or a first metal foil, and the first film includes a plating layer or a coating formed on the outer peripheral surface of the strand assembly.

[0023]

[16] A sixteenth aspect of the present invention may be the following coaxial cable: in any one of aspects 13 to 15, the strand assembly includes a first conductor strand made of a second conductive material.

[0024]

[17] Mode 17 of the present invention is a coaxial cable, wherein the coaxial cable comprises: an inner conductor; an insulator surrounding the inner conductor; and an outer conductor surrounding the insulator, wherein the inner conductor includes a strand assembly having a plurality of strands, wherein the plurality of strands include: an inner strand having a portion formed of a second resin material; and a plurality of outer strands having a portion formed of a third conductive material, which are arranged so as to surround the inner strand.

[0025]

[18] Aspect 18 of the present invention may be a coaxial cable as follows: in the coaxial cable of aspect 17, the second resin material has a Young's modulus smaller than the Young's modulus of the third conductive material.

[0026]

[19] A nineteenth aspect of the present invention may be a coaxial cable as follows: in the coaxial cable of the seventeenth or eighteenth aspect, the second resin material has a thermal conductivity lower than a thermal conductivity of the third conductive material.

[0027]

[20] Aspect 20 of the present invention may be a coaxial cable according to any one of aspects 17 to 19, wherein the second resin material has a density lower than that of the third conductive material.

[0028]

[21] Mode 21 of the present invention may also be the following coaxial cable: in any one of modes 17 to 20, the outer strand comprises: a first resin body composed of a third resin material; and a second conductor layer composed of the third conductive material, covering the outer peripheral surface of the first resin body.

[0029]

[22] Aspect 22 of the present invention may be a coaxial cable as follows: In the coaxial cable of aspect 21, the third resin material has a Young's modulus smaller than a Young's modulus of the third conductive material.

[0030]

[23] Mode 23 of the present invention may also be the following coaxial cable: in the coaxial cable of mode 21 or 22, the third resin material has a thermal conductivity lower than the thermal conductivity of the third conductive material.

[0031]

[24] Aspect 24 of the present invention may be a coaxial cable as follows: in any one of aspects 21 to 23, the third resin material has a density lower than that of the third conductive material.

[0032]

[25] Aspect 25 of the present invention may be a coaxial cable as follows: in any one of aspects 21 to 24, the second conductor layer includes a second film or a second metal foil.

[0033]

[26] Aspect 26 of the present invention may be a coaxial cable as follows: in any one of aspects 21 to 25, the second conductor layer has a thickness of 20 μm or less.

[0034]

[27] Mode 27 of the present invention may also be the following coaxial cable: in any one of modes 21 to 26, the second conductor layer includes a second film, and the second film includes a plating layer or a coating formed on the outer peripheral surface of the first resin body.

[0035]

[28] Aspect 28 of the present invention may be a coaxial cable as follows: in any one of aspects 17 to 20, the outer strand includes a second conductor strand made of the third conductive material.

[0036]

[29] Mode 29 of the present invention may also be the following coaxial cable: in any one of modes 1 to 28, the outer conductor has a braided shielding member, the braided shielding member has a plurality of coated strands woven therein, the coated strands having: a second resin body composed of a fourth resin material; and a third conductor layer composed of a fourth conductive material, covering the outer peripheral surface of the second resin body.

[0037]

[30] A 30th aspect of the present invention may be a coaxial cable as follows: In the coaxial cable of the 29th aspect, the fourth resin material has a Young's modulus smaller than the Young's modulus of the fourth conductive material.

[0038]

[31] Mode 31 of the present invention may also be the following coaxial cable: in the coaxial cable of mode 29 or 30, the fourth resin material has a thermal conductivity lower than the thermal conductivity of the fourth conductive material.

[0039]

[32] Aspect 32 of the present invention may be a coaxial cable as follows: in any one of aspects 29 to 31, the fourth resin material has a density lower than that of the fourth conductive material.

[0040]

[33] Mode 33 of the present invention may also be the following coaxial cable: in any one of modes 29 to 32, the third conductor layer includes a third film or a third metal foil.

[0041]

[34] A 34th aspect of the present invention may be a coaxial cable as follows: In any one of the coaxial cables of aspects 29 to 33, the third conductor layer has a thickness of 20 μm or less.

[0042]

[35] Mode 35 of the present invention may also be the following coaxial cable: in any one of modes 29 to 34, the third conductor layer includes a third film, and the third film includes a plating layer or a coating formed on the outer peripheral surface of the second resin body.

[0043]

[36] Aspect 36 of the present invention may be a coaxial cable as follows: in any one of aspects 1 to 35, the outer conductor includes a fourth conductor layer covering the outer peripheral surface of the insulator.

[0044]

[37] A 37th aspect of the present invention may be a coaxial cable as follows: In the coaxial cable of the 36th aspect, the fourth conductor layer includes a fourth film or a fourth metal foil.

[0045]

[38] Mode 38 of the present invention may also be the following coaxial cable: in the coaxial cable of mode 37, the fourth film includes a fourth plating layer or a fourth coating formed on the outer peripheral surface of the insulator.

[0046]

[39] A 39th aspect of the present invention may be a coaxial cable as follows: in any one of the coaxial cables of aspects 1 to 38, the coaxial cable is used in a semiconductor device testing apparatus for testing a semiconductor device.

[0047]

[40] A method 40 of the present invention is a semiconductor device testing device that tests semiconductor devices and includes a coaxial cable according to any one of methods 1 to 39.

[0048]

[41] Mode 41 of the present invention may also be the following semiconductor device testing device: In the semiconductor device testing device of mode 40, the semiconductor device testing device comprises: a first connector connected to the end of the coaxial cable; and a second connector capable of being engaged with the first connector and installed on a wiring board. Effects of the Invention

[0049] According to the present invention, the inner conductor includes: a central portion including a portion made of the first resin material or a hollow portion; and a first conductor layer made of the first conductive material and surrounding the central portion, thereby reducing the reaction force of the coaxial cable.

[0050] In addition, according to the present invention, the internal conductor includes a strand assembly having a plurality of strands, the plurality of strands including: an inner strand having a portion formed of a second resin material; and a plurality of outer strands having a portion formed of a third conductive material, which are arranged in a manner surrounding the inner strand, thereby being able to achieve a reduction in the reaction force of the coaxial cable. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 It is a schematic cross-sectional view showing the overall structure of a semiconductor device test apparatus according to the first embodiment of the present invention. Figure 2 is an exploded cross-sectional view showing a DSA and a motherboard in a first embodiment of the present invention, and is Figure 1 The corresponding figure of Part II. Figure 3 It is a cross-sectional view showing a coaxial cable in the first embodiment of the present invention. Figure 4 It is a cross-sectional view showing a coaxial cable in a second embodiment of the present invention. Figure 5 It is a cross-sectional view showing a coaxial cable in a third embodiment of the present invention. Figure 6It is a cross-sectional view showing a modified example of the coaxial cable in the third embodiment of the present invention. Figure 7 It is a cross-sectional view showing a coaxial cable in a fourth embodiment of the present invention. Figure 8 It is a cross-sectional view showing a modified example of the coaxial cable in the fourth embodiment of the present invention. Fig. 9 It is a cross-sectional view showing a coaxial cable in accordance with a fifth embodiment of the present invention. Fig.10 yes Fig. 9 Magnified view of the X section. Fig.11 It is an enlarged cross-sectional view showing a modified example of the coaxial cable in the fifth embodiment of the present invention. DETAILED DESCRIPTION

[0052] Hereinafter, embodiments of the present invention will be described based on the drawings.

[0053] <<First embodiment>> Figure 1 is a schematic cross-sectional view showing the overall structure of a semiconductor device test apparatus 1 according to a first embodiment of the present invention. Figure 2 is a cross-sectional view showing a DSA 20 and a motherboard 30 in the first embodiment of the present invention, and is similar to Figure 1 The corresponding figure of Part II.

[0054] The semiconductor device test apparatus 1 in this embodiment is an apparatus for testing the electrical characteristics of a semiconductor device such as a semiconductor integrated circuit element (hereinafter also referred to as "DUT") 200. The specific example of the test object, i.e., the DUT 200, is not particularly limited, and can be exemplified by a memory device, a logic device, or a SoC (System on chip). Figure 1 As shown, the semiconductor device test apparatus 1 includes a tester 10 that performs a test on a DUT 200, and a processor 110 that processes the DUT 200 and presses the DUT 200 against a test socket 21. The tester 10 includes a DSA 20, a motherboard 30, a test head 90, and a main frame 100. It should be noted that the structure of the tester 10 is not particularly limited to the following structure as long as it includes a coaxial cable 40A.

[0055] like Figure 1 and Figure 2As shown, a DSA (Device Specific Adapter) 20 includes a test socket 21, a test socket board 23, and a plurality of connectors 24. The DSA 20 is electrically connected to a test head 90 via a motherboard 30. The DSA 20 can be loaded and unloaded relative to the motherboard 30. The DSA 20 is designed according to the type of the DUT 200, and when the type of the DUT 200 is switched, the DSA 20 is replaced with a DSA corresponding to the type. It should be noted that the number of DSAs 20 mounted on the motherboard 30 is not particularly limited, and a plurality of DSAs 20 may be mounted on the motherboard 30.

[0056] When the DUT 200 is tested, the DUT 200 is pressed against the test socket 21 by the processor 110, thereby the DUT 200 is electrically connected to the test socket 21. The test socket 21 includes a plurality of contactors 22 that are in contact with the terminals 210 of the DUT 200. Although not particularly limited, specific examples of such contactors 22 include, for example, spring pins, vertical probes, cantilever probes, anisotropic conductive rubber sheets, protrusions provided on a film, or contactors manufactured using MEMS technology.

[0057] The test seat plate 23 is a wiring board on the upper surface of which the above-mentioned test seat 21 is installed. It should be noted that the number of test seats 21 installed on the test seat plate 23 is not particularly limited, and multiple test seats 21 can also be installed on the test seat plate 23. In addition, although not specifically shown in the figure, a test seat guide for positioning the DUT 200 relative to the test seat 21 can also be installed on the upper surface of the test seat plate 23. A coaxial connector 24 is installed on the lower surface of the test seat plate 23. The test seat 21 and the coaxial connector 24 are electrically connected via a wiring pattern or a conductive path such as a through hole formed on the test seat plate 23 (not shown).

[0058] The motherboard 30 is a repeater that electrically connects the DSA 20 and the test head 90. The motherboard 30 includes a housing 31, a plurality of coaxial connectors 32, and a plurality of coaxial cables 40A. Although not particularly limited, for example, the motherboard 30 includes more than 100 coaxial connectors 32, and 50 to 100 coaxial cables 40A are connected to one coaxial connector 32. As a result, the motherboard 30 includes thousands to tens of thousands of coaxial cables 40A. The coaxial connector 32 is connected to one end of the coaxial cable 40A (at Figure 2 The coaxial connector 32 is connected to the coaxial connector 24 of the DSA 20 described above. The coaxial connector 32 is held on the upper part of the housing 31 in a manner corresponding to the coaxial connector 24 of the DSA 20. When the DSA 20 is mounted on the motherboard 30, the coaxial connector 24 of the DSA 20 is engaged with the coaxial connector 32 of the motherboard 30. It should be noted that the structure of the coaxial cable 40A will be described in detail later.

[0059] like Figure 1 As shown, the test head 90 contains a test assembly (pin circuit card) 91 for testing the DUT 200. The test assembly 91 is electrically connected to the coaxial cable 40A of the motherboard 30 via a coaxial connector (not shown) connected to the other end of the coaxial cable 40A. The test assembly 91 transmits and receives test signals to and from the DUT 200 via the DSA 20 and the motherboard 30, thereby testing the DUT 200. The test head 90 is connected to the main frame 100 via a cable 92.

[0060] The main frame (tester body) 100 is, for example, a computer that executes a program, and communicates with each test unit 91 in the test head 90 according to the program to control each test unit 91. Each test unit 91 generates a test signal according to an instruction from the main frame 100 and outputs the test signal to the DUT 200.

[0061] Although not specifically shown in the figure, the processor 110 includes, for example: a conveying device that conveys a test tray carrying DUT 200 to the top of DSA 20; a pressing device that presses DUT 200 against the test socket 21 of DSA 20; and a sorting device that takes out DUT 200 from the test tray and sorts them according to the test results. In addition, the processor 110 includes a chamber 111 as a temperature adjustment device that applies high-temperature or low-temperature thermal stress to DUT 200. The chamber 111 is composed of a constant temperature bath that can maintain the temperature in the bath at a desired temperature. Therefore, the semiconductor device test apparatus 1 can test the DUT 200 in a state where thermal stress is applied to the DUT 200, and can perform so-called high-temperature tests and low-temperature tests.

[0062] The DSA 20 enters the chamber 111 through the opening 112 formed in the handler 110, and the test socket 21 of the DSA 20 is disposed in the chamber 111. The DUT 200 is pressed against the test socket 21 of the DSA 20 by the pressing device of the handler 110, so that the DUT 200 and the test socket 21 are electrically connected.

[0063] It should be noted that the handler 110 may be of the type that does not use a test tray but has a contact arm that absorbs and holds the DUT 200 and moves it, and the contact arm presses the DUT 200. In this case, the handler 110 may also have a heater or a heat sink provided at the front end of the contact arm as a temperature adjustment device instead of the chamber 111. Alternatively, the handler 110 may also have a heater or a heat sink provided at the front end of the contact arm as a temperature adjustment device in addition to the chamber 111.

[0064] Next, refer to Figure 3The structure of the coaxial cable 40A included in the motherboard 30 will be described in detail. Figure 3 It is a cross-sectional view showing a coaxial cable 40A in the first embodiment of the present invention.

[0065] like Figure 3 As shown, the coaxial cable 40A in this embodiment includes an inner conductor 50A, an insulator 60 surrounding the inner conductor 50A, an outer conductor 70A surrounding the insulator 60, and a sheath 80 surrounding the outer conductor 70A. Figure 3 The cable extends in the normal direction of the paper surface, Figure 3 A cross section perpendicular to the longitudinal direction (axial direction) of the coaxial cable 40A is shown.

[0066] The inner conductor 50A functions as a transmission path for transmitting an electric signal between the test head 90 and the DUT 200. On the other hand, the outer conductor 70A is connected to the ground line and functions as an electromagnetic shielding layer for shielding noise. In the semiconductor device test apparatus 1 described above, the electric signal flowing in the inner conductor 50A is a high-frequency electric signal, which is an electric signal with a frequency of 10 MHz or more, an electric signal with a frequency of 1 GHz or more, or an electric signal with a frequency of 10 GHz or more.

[0067] The inner conductor 50A includes a base material 51 and a first conductor layer 55A. The base material 51 is a wire extending in the axial direction of the coaxial cable 40A. The base material 51 is a solid wire having a circular cross-sectional shape and made of a first resin material. The base material 51 is a wire made only of the first resin material. On the other hand, the first conductor layer 55A is made of a first metal material and covers the entire circumference of the outer peripheral surface 511 of the base material 51. In addition, the first conductor layer 55A covers the outer peripheral surface 511 of the base material 51 over the entire axial area of ​​the coaxial cable 40A.

[0068] The cross-sectional area S of the base material 51 b The cross-sectional area S of the inner conductor 50A a The ratio R a (R a =S b / S a ×100) is preferably 50% or more and 99.9% or less (50% ≤ R a ≤99.9%), more preferably 75% to 99.9% (75% ≤ R a ≤99.9%). This makes it possible to further reduce the rigidity of the coaxial cable 40A.

[0069] The first conductor layer 55A is a thin film formed on the outer peripheral surface 511 of the base material 51. The thin film is, for example, a plating layer formed by a plating method such as electrolytic plating or electroless plating. Although not particularly limited, the thickness T of the thin film is a For example, it is preferably 0.1 μm or more and 20 μm or less (0.1 μm ≤ T a ≤20 μm), more preferably 0.1 μm or more and 10 μm or less (0.1 μm ≤ T a ≤10 μm). Thus, the coaxial cable 40A can be further reduced in rigidity. a The thickness T of the first conductor layer 55A can be set according to the frequency of the electrical signal flowing through the coaxial cable 40A. Specifically, when the frequency of the electrical signal is high, the thickness T of the first conductor layer 55A is set to a When the frequency of the electrical signal is low, the thickness T of the first conductor layer 55A is set to a Set thick.

[0070] It should be noted that the method for forming the thin film of the first conductor layer 55A is not limited to the above-mentioned plating method. For example, the first conductor layer 55A may be formed by a physical vapor deposition method (PVD) such as vacuum evaporation and sputtering, or a chemical vapor deposition method (CVD). Alternatively, the thin film of the first conductor layer 55A may be a coating. Although not particularly limited, the coating may be formed by, for example, applying a coating containing metal particles and an adhesive to the outer peripheral surface 511 of the base material 51 and curing it by heating.

[0071] Alternatively, the first conductor layer 55A may be formed of a metal foil instead of the above-mentioned film. In this case, the first conductor layer 55A is formed by winding a metal foil around the outer peripheral surface 511 of the base material 51. Although not particularly limited, specific examples of the metal foil constituting the first conductor layer 55A include copper foil and silver-plated copper foil.

[0072] The first resin material constituting the base material 51 has a Young's modulus (E ) greater than that of the first metal material constituting the first conductor layer 55A under the same measurement conditions. ma ) Small Young's modulus (E ra )(E ra <E ma In addition, the first resin material has a thermal conductivity (λ) greater than that of the first metal material constituting the first conductor layer 55A under the same measurement conditions. ma ) Low thermal conductivity (λ ra )(λ ra <λ ma ). Furthermore, the first resin material has a density (mass per unit volume) (ρ) greater than that of the first metal material constituting the first conductor layer 55A under the same measurement conditions.ma ) low density (ρ ra )(ρ ra <ρ ma ).

[0073] As a specific example of the first resin material constituting the base material 51, there is no particular limitation as long as it is a resin material having electrical insulation, and examples thereof include imide resins such as polyimide, fluororesins such as polytetrafluoroethylene (PTFE) and perfluoroalkoxyalkane (PFA), polyetheretherketone (PEEK), polyethylene (PE), and cross-linked foamed polyethylene. On the other hand, as a specific example of the first metal material constituting the first conductor layer 55A, there is no particular limitation as long as it is a metal material having good electrical conductivity, and examples thereof include silver or copper, or alloys thereof.

[0074] The insulator 60 is a dielectric interposed between the inner conductor 50A and the outer conductor 70A. The insulator 60 has an annular cross-sectional shape and covers the entire circumference of the outer peripheral surface of the inner conductor 50A. In addition, the insulator 60 covers the outer peripheral surface of the inner conductor 50A over the entire axial area of ​​the coaxial cable 40A.

[0075] The insulator 60 is made of a resin material having electrical insulation properties. Although not particularly limited, specific examples of the resin material constituting the insulator 60 include, for example, imide resins such as polyimide, fluororesins such as polytetrafluoroethylene (PTFE), polyethylene (PE), and cross-linked foamed polyethylene. As the material constituting the insulator 60, the same resin material as the first resin material constituting the above-mentioned base material 51 can also be used.

[0076] The outer conductor 70A covers the outer peripheral surface of the insulator 60. The outer conductor 70A has an annular cross-sectional shape and covers the entire circumference of the outer peripheral surface of the insulator 60. The outer conductor 70A and the inner conductor 50A are arranged concentrically, and the interval between the inner conductor 50A and the outer conductor 70A is defined by the insulator 60. The outer conductor 70A covers the outer peripheral surface of the inner conductor 50A over the entire axial area of ​​the coaxial cable 40A.

[0077] The outer conductor 70A is a thin film formed on the outer peripheral surface 61 of the insulator 60. The thin film is made of a metal material. The thin film is, for example, a plated layer formed by a plating method such as electrolytic plating or electroless plating. Specific examples of the metal material constituting the outer conductor 70A are not particularly limited as long as they are metal materials with good conductivity, and examples thereof include silver, copper, or alloys thereof.

[0078] It should be noted that the method of forming the thin film of the outer conductor 70A is not limited to the above-mentioned plating method. For example, the outer conductor 70A may be formed by physical vapor deposition (PVD) or chemical vapor deposition (CVD). Alternatively, the thin film of the outer conductor 70A may be a coating. Although not particularly limited, the coating may be formed by, for example, applying a coating containing metal particles and a binder to the outer peripheral surface 61 of the insulator 60 and curing it by heating.

[0079] Alternatively, the outer conductor 70A may be formed of a metal foil instead of the above-mentioned film. In this case, the outer conductor 70A is formed by winding a metal foil around the outer peripheral surface 61 of the insulator 60. Although not particularly limited, specific examples of the metal foil constituting the outer conductor 70A include, for example, copper foil and silver-plated copper foil. Alternatively, a metal tube such as a copper tube may be used as the outer conductor 70A instead of the above-mentioned film.

[0080] The outer sheath 80 covers the outer peripheral surface of the outer conductor 70A. The outer sheath 80 has an annular cross-sectional shape and covers the entire outer peripheral surface of the outer conductor 70A. In addition, the outer sheath 80 covers the outer peripheral surface of the outer conductor 70A over the entire axial area of ​​the coaxial cable 40A.

[0081] The outer skin 80 is made of an electrically insulating resin material. Although not particularly limited, specific examples of the resin material constituting the outer skin 80 include polyvinyl chloride (PVC), polyethylene (PE), polytetrafluoroethylene (PTFE), perfluoroalkoxyalkane (PFA), and polyperfluoroethylene propylene (FEP).

[0082] Here, as described above, the more coaxial cables are connected to one connector, the stronger the reaction force from the coaxial cables. Therefore, when assembling the motherboard, there are cases where the coaxial cables themselves are broken by forcibly pressing them in, or cracks are generated in the welding part between the internal conductor of the coaxial cable and the terminal of the coaxial connector, resulting in poor connection.

[0083] In contrast, in the present embodiment, the inner conductor 50A includes a base material 51 made of a first resin material and a first conductor layer 55A covering the base material 51, so that the rigidity of the coaxial cable 40A can be reduced and the reaction force of the coaxial cable 40A can be reduced. That is, in the present embodiment, the frequency of the electric signal used in the semiconductor device test device is high frequency, and the higher the frequency of the electric signal, the more it is concentrated on the surface of the conductor due to the skin effect. By forming the surface of the inner conductor with the first conductive material and the inner part of the inner conductor with the first resin material, the reaction force of the coaxial cable 40A can be reduced. As a result, it is possible to suppress the occurrence of disconnection of the motherboard 30 during assembly.

[0084] In addition, in this embodiment, as described above, the reaction force of the coaxial cable 40A can be reduced. Therefore, even if the connector 32 connected to the coaxial cable 40A has the above-mentioned sliding function, the contact pressure between the terminals of the connectors 32 and 24 can be fully ensured, and poor connection between the connectors 32 and 24 can be suppressed.

[0085] Furthermore, in this embodiment, as described above, the reaction force of the coaxial cable 40A can be reduced, so that the connector 32 can be prevented from being mated with the mating connector 24 in a tilted state, and sufficient connection reliability can be ensured during thousands of insertions and removals of the connectors 32 and 24.

[0086] In addition, when a low temperature test (for example, a test of a DUT at -50°C to -40°C) is performed in a semiconductor device test apparatus, if the inner conductor of the coaxial cable is a solid metal wire, heat may be transferred to the motherboard via the inner conductor, and the inside of the motherboard may be cooled and condensed. In contrast, in the present embodiment, the inner conductor 50A includes a motherboard 51 made of a first resin material and a first conductor layer 55A covering the motherboard 51, so that heat transfer from the cavity 111 of the processor 110 to the inside of the motherboard 30 can be suppressed, and condensation can be suppressed inside the motherboard 30.

[0087] Furthermore, in the present embodiment, the internal conductor 50A includes a base material 51 made of a first resin material and a first conductor layer 55A covering the base material 51, so that it is possible to reduce the weight of several thousand to several tens of thousands of coaxial cables 40A. As a result, it is possible to reduce the strength of the housing 31 that holds the coaxial cables 40A, and as a result, it is possible to reduce the cost of the motherboard 30.

[0088] <<Second embodiment>> Figure 41 is a cross-sectional view showing a coaxial cable 40B in a second embodiment of the present invention. In this embodiment, the structure of the internal conductor 50B is different from that in the first embodiment, but the other structures are the same as those in the first embodiment. Hereinafter, only the differences between the coaxial cable 40B in the second embodiment and the first embodiment will be described, and the same reference numerals are given to the same components as those in the first embodiment and their descriptions will be omitted.

[0089] like Figure 4 As shown in FIG. 1 , the internal conductor 50B in this embodiment includes a cavity 52 and a first conductor layer 55B. The cavity 52 is a space filled with a gas such as air, and exists in the inner hole 62 of the cylindrical insulator 60. It should be noted that the cavity 52 may also be a vacuum space. The inner hole 62 has a circular cross-sectional shape and penetrates the insulator 60 over the entire axial region of the coaxial cable 40B. That is, the insulator 60 is a cylindrical member and is a hollow member.

[0090] The first conductor layer 55B is a thin film formed on the inner peripheral surface 63 of the inner hole 62 of the insulator 60. The first conductor layer 55B covers the entire circumference of the inner peripheral surface 63 of the inner hole 62. In addition, the first conductor layer 55B covers the inner peripheral surface 63 of the inner hole 62 over the entire axial area of ​​the coaxial cable 40B. The first conductor layer 55B formed on the inner peripheral surface 63 of the inner hole 62 of the insulator 60 defines the above-mentioned cavity 52.

[0091] The cross-sectional area S of the cavity 52 d The cross-sectional area S of the inner conductor 50B c The ratio R b (R b =S d / S c ×100) is preferably 50% or more and 99.9% or less (50% ≤ R b ≤99.9%), more preferably 75% to 99.9% (75% ≤ R b ≤99.9%). This makes it possible to further reduce the rigidity of the coaxial cable 40B.

[0092] The first conductor layer 55B is made of a first metal material, similarly to the first conductor layer 55A of the first embodiment, and is a plated layer formed by a plating method. As a specific example of the first metal material, there is no particular limitation as long as it is a metal material with good conductivity, and examples thereof include silver or copper, or alloys thereof. Although there is no particular limitation, the thickness T of the film is b For example, it is preferably 0.1 μm or more and 20 μm or less (0.1 μm ≤ T b ≤20 μm), more preferably 0.1 μm or more and 10 μm or less (0.1 μm ≤ Tb ≤10 μm). This makes it possible to further reduce the rigidity of the coaxial cable 40B.

[0093] It should be noted that the first conductor layer 55B may be a thin film formed by a method other than plating such as physical vapor deposition (PVD) or chemical vapor deposition (CVD), or may be a coating formed by applying a coating containing metal particles. Alternatively, the first conductor layer 55B may be formed of a metal foil instead of a thin film.

[0094] In the present embodiment, the inner conductor 50B includes the cavity 52 and the first conductor layer 55B surrounding the cavity 52, so that the rigidity of the coaxial cable 40B can be reduced and the reaction force of the coaxial cable 40B can be reduced. That is, in the present embodiment, the frequency of the electric signal used in the semiconductor device test device is high frequency, and the higher the frequency of the electric signal, the more it is concentrated on the surface of the conductor due to the skin effect. By forming the surface of the inner conductor with the first conductive material and setting the inner part of the inner conductor as a cavity, the reaction force of the coaxial cable 40B can be reduced. As a result, it is possible to suppress the occurrence of disconnection of the motherboard 30 during assembly.

[0095] In addition, in this embodiment, as described above, the reaction force of the coaxial cable 40B can be reduced, so as in the first embodiment, the connection failure of the connectors 32 and 24 can be suppressed, and sufficient connection reliability can be ensured during thousands of insertion and removal of the connectors 32 and 24.

[0096] In addition, in the present embodiment, since the internal conductor 50B includes the cavity 52 , it is possible to suppress heat transfer from the cavity 111 of the processor 110 to the inside of the motherboard 30 , and to suppress condensation from occurring inside the motherboard 30 .

[0097] In this embodiment, the inner conductor 50B has the cavity 52, so that the weight of thousands to tens of thousands of coaxial cables 40B can be reduced. This can reduce the strength of the housing 31 that holds the coaxial cables 40B, resulting in a reduction in the cost of the motherboard 30.

[0098] <<Third Embodiment>> Figure 5 1 is a cross-sectional view showing a coaxial cable 40C in a third embodiment of the present invention. In this embodiment, the structure of the internal conductor 50C is different from that in the first embodiment, but the other structures are the same as those in the first embodiment. Hereinafter, only the differences between the coaxial cable 40C in the third embodiment and the first embodiment will be described, and the same reference numerals are given to the same components as those in the first embodiment and their descriptions will be omitted.

[0099] like Figure 5 As shown, the internal conductor 50C of this embodiment includes a strand assembly 53 and a first conductor layer 55C. The strand assembly 53 includes a plurality of resin strands 532. Each resin strand 532 is a solid wire having a circular cross-sectional shape and made of a first resin material. Each resin strand 532 is a wire made only of the first resin material. The strand assembly 53 is a twisted wire formed by twisting the plurality of resin strands 532. The strand assembly 53 extends in the axial direction of the coaxial cable 40C.

[0100] The first conductor layer 55C is composed of a metal foil covering the outer peripheral surface 531 of the strand assembly 53. Although not particularly limited, specific examples of the metal foil constituting the first conductor layer 55C include copper foil and silver-plated copper foil. The first conductor layer 55C covers the entire circumference of the outer peripheral surface 531 of the strand assembly 53. In addition, the first conductor layer 55C covers the outer peripheral surface 531 of the strand assembly 53 over the entire axial region of the coaxial cable 40C.

[0101] The cross-sectional area S of the strand assembly 53 f The cross-sectional area S of the inner conductor 50C e The ratio R c (R c =S f / S e ×100) is preferably 50% or more and 99.9% or less (50% ≤ R c ≤99.9%), more preferably 75% to 99.9% (75% ≤ R c ≤99.9%). This makes it possible to further reduce the rigidity of the coaxial cable 40C.

[0102] The first conductor layer 55C is made of a metal foil, and the metal foil is made of a first metal material. Although not particularly limited, the thickness T of the metal foil is c For example, it is preferably 0.1 μm or more and 20 μm or less (0.1 μm ≤ T c ≤20 μm), more preferably 0.1 μm or more and 10 μm or less (0.1 μm ≤ T c ≤10 μm). This makes it possible to further reduce the rigidity of the coaxial cable 40C.

[0103] It should be noted that the first conductor layer 55C may be a thin film (plated layer) formed on the outer peripheral surface 531 of the strand assembly 53 by a plating method such as electrolytic plating or electroless plating. Alternatively, the first conductor layer 55C may be a thin film formed by a method other than plating such as physical vapor deposition (PVD) or chemical vapor deposition (CVD), or may be a coating formed by applying a paint containing metal particles.

[0104] The first resin material constituting the resin strand 532 has a Young's modulus (E ) greater than that of the first metal material constituting the first conductor layer 55C under the same measurement conditions. ma ) Small Young's modulus (E ra )(E ra <E ma In addition, the first resin material has a thermal conductivity (λ) greater than that of the first metal material constituting the first conductor layer 55C under the same measurement conditions. ma ) Low thermal conductivity (λ ra )(λ ra <λ ma ). Furthermore, the first resin material has a density (ρ) greater than that of the first metal material constituting the first conductor layer 55C under the same measurement conditions. ma ) low density (ρ ra )(ρ ra <ρ ma ).

[0105] As a specific example of the first resin material constituting the resin strand 532, there is no particular limitation as long as it is a resin material having electrical insulation, and examples thereof include imide resins such as polyimide, fluororesins such as polytetrafluoroethylene (PTFE), polyetheretherketone (PEEK), polyethylene (PE), and cross-linked foamed polyethylene. On the other hand, as a specific example of the first metal material constituting the first conductor layer 55C, there is no particular limitation as long as it is a metal material having good electrical conductivity, and examples thereof include silver or copper, or alloys thereof.

[0106] In this embodiment, the internal conductor 50C includes: a strand assembly 53, which includes a plurality of resin strands 532 formed of a first resin material; and a first conductor layer 55C, which covers the strand assembly 53. Therefore, as in the first embodiment, the coaxial cable 40C can be made less rigid and the reaction force of the coaxial cable 40C can be reduced.

[0107] In addition, in this embodiment, as described above, the reaction force of the coaxial cable 40C can be reduced, so as in the first embodiment, the connection failure of the connectors 32 and 24 can be suppressed, and sufficient connection reliability can be ensured during thousands of insertion and removal of the connectors 32 and 24.

[0108] In addition, in the present embodiment, the internal conductor 50C comprises: a strand assembly 53 comprising a plurality of resin strands 532 formed of a first resin material; and a first conductor layer 55C covering the strand assembly 53, thereby being able to suppress heat transfer from the chamber 111 of the processor 110 to the interior of the motherboard 30, and suppressing the generation of condensation inside the motherboard 30.

[0109] Furthermore, in the present embodiment, the internal conductor 50C includes: a strand assembly 53 including a plurality of resin strands 532 made of a first resin material; and a first conductor layer 55C covering the strand assembly 53, so that it is possible to achieve a weight reduction of several thousand to several tens of thousands of coaxial cables 40C. As a result, it is possible to reduce the strength of the housing 31 that holds the coaxial cables 40C, and as a result, it is possible to achieve a cost reduction of the motherboard 30.

[0110] It should be noted that the structure of the strand assembly 53 is not particularly limited to the above structure. Figure 5 In the embodiment, the strand assembly 53 is composed of 7 strands 532, but the number of strands constituting the strand assembly 53 is not particularly limited thereto. For example, the strand assembly 53 may be composed of 19 strands, or may be composed of 24 strands.

[0111] In addition, if Figure 6 As shown, the strand assembly 53 may include first conductor strands 533 as strands in addition to the resin strands 532 . Figure 6 It is a cross-sectional view showing a modified example of the coaxial cable 40C in the third embodiment of the present invention.

[0112] exist Figure 6 In the modified example shown, the strand assembly 53 has a first conductor strand 533 as the strand at the center, and six resin strands 532 are arranged to surround the first conductor strand 533. The first conductor strand 533 is a solid wire having a circular cross-sectional shape and made of a second metal material having good electrical conductivity. The first conductor strand 533 is a wire made only of a metal material. Although not particularly limited, as a specific example of the second metal material constituting the first conductor strand 533, for example, copper or silver, or an alloy thereof can be exemplified.

[0113] In this Figure 6 In the modified example shown, the first resin material constituting the resin strand 532 has a Young's modulus (E ) greater than that of the second metal material constituting the first conductor strand 533 under the same measurement conditions. mb ) Small Young's modulus (E ra )(E ra <E mb In addition, the first resin material has a thermal conductivity (λ) greater than that of the second metal material constituting the first conductor strand 533 under the same measurement conditions. mb ) Low thermal conductivity (λ ra )(λ ra <λ mb). Furthermore, the first resin material has a density (ρ) greater than that of the second metal material constituting the first conductor strand 533 under the same measurement conditions. mb ) low density (ρ ra )(ρ ra <ρ mb ).

[0114] Since the strand aggregate 53 includes the first conductor strand 533 , the coaxial cable 40C can be used also as a power supply line for supplying power to the DUT 200 , and the versatility of the coaxial cable 40C can be improved.

[0115] It should be noted that the number of the first conductor strands 533 included in the strand assembly 53 is not particularly limited to the above number as long as the strand assembly 53 includes at least one resin strand 532, and the strand assembly 53 may include a plurality of first conductor strands 533. In addition, the first conductor strand 533 may not be arranged at the center of the strand assembly 53, and may be included in the strands surrounding the center, or may be included in the strands at the outermost periphery of the strand assembly 53.

[0116] <<Fourth embodiment>> Figure 7 1 is a cross-sectional view showing a coaxial cable 40D in a fourth embodiment of the present invention. In this embodiment, the structure of the internal conductor 50D is different from that in the first embodiment, but the other structures are the same as those in the first embodiment. Hereinafter, only the differences between the coaxial cable 40D in the fourth embodiment and the first embodiment will be described, and the same reference numerals are given to the same components as those in the first embodiment and their description will be omitted.

[0117] like Figure 7 As shown, the internal conductor 50D of this embodiment includes a strand assembly 54, but does not include a first conductor layer covering the outer peripheral surface of the strand assembly 54. The strand assembly 54 includes one inner strand 541 and a plurality of outer strands 542 arranged to surround the inner strand 541. The strand assembly 54 is a twisted wire formed by twisting a plurality of strands 541 and 542. The strand assembly 54 extends in the axial direction of the coaxial cable 40D.

[0118] The inner strand 541 is a solid wire having a circular cross-sectional shape and made of the second resin material. The inner strand 541 is a wire made of only the second resin material.

[0119] The outer strand 542 includes a first resin body 543 and a second conductor layer 545 covering an outer peripheral surface 544 of the first resin body 543. The first resin body 543 is a solid wire having a circular cross-sectional shape and made of a third resin material. The first resin body 543 is a wire made only of the third resin material. The second conductor layer 545 covers the entire circumference of the outer peripheral surface 544 of the first resin body 543. In addition, the second conductor layer 545 covers the outer peripheral surface 544 of the first resin body 543 over the entire axial area of ​​the coaxial cable 40D. It should be noted that the inner strand 541 may also include a conductor layer covering the outer peripheral surface of the resin body made of the second resin material, similarly to the outer strand 542.

[0120] The second conductor layer 545 is made of a third metal material. The second conductor layer 545 is a plated layer formed by a plating method. Although not particularly limited, the thickness T of the film is d For example, it is preferably 0.1 μm or more and 20 μm or less (0.1 μm ≤ T d ≤20 μm), more preferably 0.1 μm or more and 10 μm or less (0.1 μm ≤ T d ≤10 μm). This makes it possible to further reduce the rigidity of the coaxial cable 40D.

[0121] It should be noted that the second conductor layer 545 may be a thin film formed by a method other than plating such as physical vapor deposition (PVD) or chemical vapor deposition (CVD), or may be a coating formed by applying a coating containing metal particles. Alternatively, the second conductor layer 545 may be formed of a metal foil instead of a thin film.

[0122] The second resin material constituting the inner strand 541 has a Young's modulus (E ) greater than that of the third metal material constituting the second conductor layer 545 under the same measurement conditions. mc ) Small Young's modulus (E rb )(E rb <E mc In addition, the second resin material has a thermal conductivity (λ) greater than that of the third metal material constituting the second conductor layer 545 under the same measurement conditions. mc ) Low thermal conductivity (λ rb )(λ rb <λ mc ). Furthermore, the second resin material has a density (ρ) greater than that of the third metal material constituting the second conductor layer 545 under the same measurement conditions. mc ) low density (ρ rb )(ρ rb <ρ mc ).

[0123] Similarly, the third resin material constituting the first resin body 543 of the outer strand 542 has a Young's modulus (E ) greater than that of the third metal material constituting the second conductor layer 545 under the same measurement conditions. mc ) Small Young's modulus (E rc )(E rc <E mc In addition, the third resin material has a thermal conductivity (λ) greater than that of the third metal material constituting the second conductor layer 545 under the same measurement conditions. mc ) Low thermal conductivity (λ rc )(λ rc <λ mc ). Furthermore, the third resin material has a density (ρ) greater than that of the third metal material constituting the second conductor layer 545 under the same measurement conditions. mc ) low density (ρ rc )(ρ rc <ρ mc ).

[0124] As a specific example of the second resin material constituting the inner strand 541, there is no particular limitation as long as it is a resin material having electrical insulation properties, and examples thereof include imide resins such as polyimide, fluororesins such as polytetrafluoroethylene (PTFE) and perfluoroalkoxyalkane (PFA), polyetheretherketone (PEEK), polyethylene (PE), and cross-linked foamed polyethylene. Similarly, as a specific example of the third resin material constituting the first resin body 543 of the outer strand 542, there is no particular limitation as long as it is a resin material having electrical insulation properties, and examples thereof include imide resins such as polyimide, fluororesins such as polytetrafluoroethylene (PTFE) and perfluoroalkoxyalkane (PFA), polyetheretherketone (PEEK), polyethylene (PE), and cross-linked foamed polyethylene. On the other hand, as a specific example of the third metal material constituting the second conductor layer 545, there is no particular limitation as long as it is a metal material having good electrical conductivity, and examples thereof include silver or copper, or alloys thereof.

[0125] In the present embodiment, the inner conductor 50D is composed of a strand assembly 54, the strand assembly 54 includes an inner strand 541 made of a second resin material, and a plurality of outer strands 542 arranged to surround the inner strand 541, and the outer strand 542 includes a first resin body 543 made of a third resin material, and a second conductor layer 545 covering an outer peripheral surface 544 of the first resin body 543, so that the rigidity of the coaxial cable 40D can be reduced, and the reaction force of the coaxial cable 40D can be reduced. That is, in the present embodiment, the frequency of the electric signal used in the semiconductor device test device is high frequency and the higher the frequency of the electric signal is, the more it is concentrated on the surface of the conductor due to the skin effect. By forming the surface of the inner conductor with the third conductive material and forming the inner part of the inner conductor with the second and third resin materials, the reaction force of the coaxial cable 40D can be reduced. As a result, it is possible to suppress the occurrence of wire breakage during assembly of the motherboard 30.

[0126] In addition, in this embodiment, as described above, the reaction force of the coaxial cable 40D can be reduced, so as in the first embodiment, the connection failure of the connectors 32 and 24 can be suppressed, and sufficient connection reliability can be ensured during thousands of insertion and removal of the connectors 32 and 24.

[0127] In addition, in the present embodiment, the internal conductor 50D is composed of a strand assembly 54, which includes an inner strand 541 made of a second resin material, and a plurality of outer strands 542 arranged to surround the inner strand 541, and the outer strand 542 includes a first resin body 543 made of a third resin material, and a second conductor layer 545 covering an outer peripheral surface 544 of the first resin body 543, thereby suppressing heat transfer from the cavity 111 of the processor 110 to the interior of the motherboard 30, and suppressing condensation inside the motherboard 30.

[0128] Furthermore, in the present embodiment, the inner conductor 50D is composed of a strand assembly 54, the strand assembly 54 includes an inner strand 541 made of a second resin material, and a plurality of outer strands 542 arranged to surround the inner strand 541, the outer strand 542 includes a first resin body 543 made of a third resin material, and a second conductor layer 545 covering an outer peripheral surface 544 of the first resin body 543, so that the weight of several thousand to tens of thousands of coaxial cables 40D can be reduced. As a result, the strength of the housing 31 that holds the coaxial cable 40D can be reduced, and as a result, the cost of the motherboard 30 can be reduced.

[0129] It should be noted that the structure of the strand assembly 54 is not particularly limited to the above structure. Figure 7In the embodiment, the strand assembly 54 is composed of 7 strands 541 and 542, but the number of strands constituting the strand assembly 54 is not particularly limited thereto. For example, the strand assembly 54 may be composed of 19 strands, or may be composed of 24 strands. In this case, as long as the outermost periphery of the strand assembly 54 is composed of the outer strand 542, either the inner strand 541 or the outer strand 542 may be used as the strand located on the inner side of the outermost periphery.

[0130] In addition, if Figure 8 As shown, instead of the outer strands 542 , second conductor strands 546 may be used as the strands at the outermost periphery of the strand assembly 54 . Figure 8 It is a cross-sectional view showing a modified example of the coaxial cable 40D in the fourth embodiment of the present invention.

[0131] exist Figure 8 In the illustrated modification, the strand assembly 54 includes six second conductor strands 546 as the outermost strands, and the second conductor strands 546 are arranged so as to surround the inner strand 541. The second conductor strands 546 are solid wires having a circular cross-sectional shape and made of a third metal material having good electrical conductivity. The second conductor strands 546 are wires made only of a metal material. Although not particularly limited, specific examples of the third metal material constituting the second conductor strands 546 include copper or silver, or alloys thereof.

[0132] Since the strand assembly 54 includes the second conductor strand 546 , the coaxial cable 40D can be used also as a power supply line for supplying power to the DUT 200 , and the versatility of the coaxial cable 40D can be improved.

[0133] As long as the outermost circumference of the strand assembly 54 is composed of the second conductor strands 546, the inner strands 541 and the second conductor strands 546 can be arbitrarily arranged in the strand assembly 54. In addition, the outermost strands of the strand assembly 54 may be mixed with the outer strands 542 and the second conductor strands 546.

[0134] <<Fifth embodiment>> Fig. 9 4 is a cross-sectional view showing a coaxial cable 40E in accordance with a fifth embodiment of the present invention. Fig.10 yes Fig. 9 In this embodiment, as shown in FIG. Fig. 9As shown, the structure of the outer conductor 70B is different from that of the first embodiment, but the other structures are the same as those of the first embodiment. Hereinafter, only the differences between the coaxial cable 40E in the fifth embodiment and the first embodiment will be described, and the same reference numerals are given to the same components as those in the first embodiment and their descriptions are omitted.

[0135] The outer conductor 70B of this embodiment is a braided shield having a plurality of coated strands 71 ​​woven therein. Fig.10 As shown in FIG. 1 , the coated strand 71 includes a second resin body 711 and a third conductor layer 713 covering an outer peripheral surface 712 of the second resin body 711. The second resin body 711 is a solid wire having a circular cross-sectional shape and made of a fourth resin material, and is a wire made only of the fourth resin material. The third conductor layer 713 covers the entire circumference of the outer peripheral surface 712 of the second resin body 711. In addition, the third conductor layer 713 covers the outer peripheral surface 712 of the second resin body 711 over the entire axial area of ​​the coaxial cable 40E.

[0136] The third conductor layer 713 is made of a fourth metal material. The third conductor layer 713 is a plated layer formed by a plating method. Although not particularly limited, the thickness T of the film is e For example, it is preferably 0.1 μm or more and 20 μm or less (0.1 μm ≤ T e ≤20 μm), more preferably 0.1 μm or more and 10 μm or less (0.1 μm ≤ T e ≤10 μm). This makes it possible to further reduce the rigidity of the coaxial cable 40E.

[0137] It should be noted that the third conductor layer 713 may be a thin film formed by a method other than plating such as physical vapor deposition (PVD) or chemical vapor deposition (CVD), or a coating formed by applying a coating containing metal particles. Alternatively, the third conductor layer 713 may be formed of a metal foil instead of a thin film.

[0138] The fourth resin material constituting the second resin body 711 has a Young's modulus (E ) greater than that of the fourth metal material constituting the third conductor layer 713 under the same measurement conditions. md ) Small Young's modulus (E rd )(E rd <E md In addition, the fourth resin material has a thermal conductivity (λ) greater than that of the fourth metal material constituting the third conductor layer 713 under the same measurement conditions. md ) Low thermal conductivity (λ rd )(λ rd <λ md). Furthermore, the fourth resin material has a density (ρ) greater than that of the fourth metal material constituting the third conductor layer 713 under the same measurement conditions. md ) low density (ρ rd )(ρ rd <ρ md ).

[0139] As a specific example of the fourth resin material constituting the second resin body 711, there is no particular limitation as long as it is a resin material having electrical insulation properties, and examples thereof include imide resins such as polyimide, fluororesins such as polytetrafluoroethylene (PTFE) and perfluoroalkoxyalkane (PFA), polyetheretherketone (PEEK), polyethylene (PE), and cross-linked foamed polyethylene. On the other hand, as a specific example of the fourth metal material constituting the third conductor layer 713, there is no particular limitation as long as it is a metal material having good electrical conductivity, and examples thereof include silver or copper, or alloys thereof.

[0140] In this embodiment, similar to the first embodiment, the internal conductor 50A includes a base material 51 formed of a first resin material and a first conductor layer 55A covering the base material 51, thereby achieving low rigidity of the coaxial cable 40E, reducing the reaction force of the coaxial cable 40E, and preventing the motherboard 30 from breaking during assembly.

[0141] In addition, in this embodiment, as described above, the reaction force of the coaxial cable 40E can be reduced, so as in the first embodiment, the connection failure of the connectors 32 and 24 can be suppressed, and sufficient connection reliability can be ensured during thousands of insertion and removal of the connectors 32 and 24.

[0142] In addition, in this embodiment, similar to the first embodiment, the internal conductor 50A includes a base material 51 formed of a first resin material and a first conductor layer 55A covering the base material 51, thereby suppressing heat transfer from the cavity 111 of the processor 110 to the interior of the motherboard 30 and suppressing condensation inside the motherboard 30.

[0143] In addition, in this embodiment, similarly to the first embodiment, the internal conductor 50A includes a base material 51 made of a first resin material and a first conductor layer 55A covering the base material 51, so that it is possible to achieve weight reduction of several thousand to several tens of thousands of coaxial cables 40E. As a result, it is possible to reduce the strength of the housing 31 that holds the coaxial cables 40E, and as a result, it is possible to achieve cost reduction of the motherboard 30.

[0144] Furthermore, in the present embodiment, the outer conductor 70B is a braided shielding member woven with a covered strand 71, and the covered strand 71 has a second resin body 711 formed of a fourth resin material, and a third conductor layer 713 covering the second resin body 711, thereby enabling further reduction of the rigidity of the coaxial cable 40E and further reduction of the reaction force of the coaxial cable 40E.

[0145] In addition, in this embodiment, the outer conductor 70B is a braided shielding part woven with a covered strand 71, and the covered strand 71 has a second resin body 711 formed by a fourth resin material, and a third conductor layer 713 covering the second resin body 711, thereby further suppressing heat transfer from the cavity 111 of the processor 110 to the interior of the motherboard 30.

[0146] In addition, in this embodiment, the outer conductor 70B is a braided shielding part formed by weaving in the covered strands 71, and the covered strands 71 ​​have a second resin body 711 formed by a fourth resin material and a third conductor layer 713 covering the second resin body 711, thereby further achieving the lightweight of thousands to tens of thousands of coaxial cables 40E.

[0147] It should be explained, such as Fig.11 As shown in FIG. 1 , the outer conductor 70C may include the film 70A described in the first embodiment in addition to the braided shield 70B described above. In this case, the braided shield 70B is arranged radially outside the film 70A. Fig.11 is an enlarged cross-sectional view showing a modified example of the coaxial cable 40E in the fifth embodiment of the present invention, and is a view showing Fig.10 It should be noted that Fig.11 In the illustrated modification, the above-mentioned metal foil or metal tube may be used instead of the film 70A.

[0148] It should be noted that the above-described embodiments are recorded to make the present invention easy to understand, and are not recorded to limit the present invention. Therefore, the gist of the various elements disclosed in the above-described embodiments is that all design changes and equivalents belonging to the technical scope of the present invention are also included.

[0149] For example, the fifth embodiment described in Fig.10 The outer conductor 70B shown is applied to the coaxial cables 40B to 40D of the second to fourth embodiments. Fig.11 The outer conductor 70C shown is applied to the coaxial cables 40B to 40D of the second to fourth embodiments. Explanation of symbols

[0150] 1: Semiconductor device test equipment 10: Tester 20:DSA 21: Test socket 22: Contactor 23: Test seat plate 24: Coaxial connector 30: Motherboard 31: Shell 32: Coaxial connector 40A~40E: coaxial cable 50A~50D: Inner conductor 51: Base material 511: Outer surface 52: Hollow 53: Strand aggregate 531: Outer surface 532: Resin strands 533: First conductor strand 54: Strand assembly 541: Inner Strand 542: Outer Strand 543: First resin body 544: Outer surface 545: Second conductor layer 546: Second conductor strand 55A~55C: First conductor layer 60: Insulator 61: Outer surface 62: Inner hole 63: Inner Surface 70A: External conductor (film) 70B: Outer conductor (braided shield) 70C: External conductor 71: Coated strands 711: Second resin body 712: Outer surface 713: The third conductor layer 80: Skin 90: Test Head 91: Experimental Components 92: Cable 100: Main frame 110: Processor 111: Chamber 112: Opening 200: DUT 210: Terminal.

Claims

1. A coaxial cable, wherein: The coaxial cable has: Internal conductor; an insulator surrounding the inner conductor; and an outer conductor, which surrounds the insulator, The inner conductor comprises: a center portion including a portion made of the first resin material or a portion that is a hollow portion; and The first conductor layer is made of a first conductive material and surrounds the central portion.

2. The coaxial cable according to claim 1, wherein: The first conductor layer includes a first film or a first metal foil.

3. The coaxial cable according to claim 1, wherein: The first conductor layer has a thickness of 20 μm or less.

4. The coaxial cable according to claim 1, wherein: The central portion includes a base material composed of the first resin material, The first conductor layer covers the outer peripheral surface of the base material.

5. The coaxial cable according to claim 4, wherein: The ratio of the cross-sectional area of ​​the base material to the cross-sectional area of ​​the internal conductor is 50% or more.

6. The coaxial cable according to claim 1, wherein: The central portion includes the cavity, The first conductor layer covers the inner peripheral surface of the insulator.

7. The coaxial cable according to claim 6, wherein: A ratio of a cross-sectional area of ​​the cavity to a cross-sectional area of ​​the internal conductor is 50% or more.

8. The coaxial cable according to claim 1, wherein: The central portion includes a strand assembly, wherein the strand assembly includes resin strands made of the first resin material. The first conductor layer covers the outer peripheral surface of the strand assembly.

9. The coaxial cable according to claim 8, wherein: A ratio of a cross-sectional area of ​​the resin strand to a cross-sectional area of ​​the internal conductor is 50% or more.

10. The coaxial cable according to claim 8, wherein: The strand assembly includes first conductor strands made of a second conductive material.

11. A coaxial cable, wherein: The coaxial cable has: Internal conductor; an insulator surrounding the inner conductor; and an outer conductor, which surrounds the insulator, The inner conductor includes a strand assembly having a plurality of strands. The plurality of strands include: an inner strand having a portion made of a second resin material; and The plurality of outer strands include a portion made of a third conductive material and are arranged to surround the inner strand.

12. The coaxial cable according to claim 11, wherein: The outer strands have: a first resin body composed of a third resin material; and The second conductor layer is made of the third conductive material and covers the outer peripheral surface of the first resin body.

13. The coaxial cable according to claim 12, wherein: The second conductor layer includes a second film or a second metal foil.

14. The coaxial cable according to claim 12, wherein: The second conductor layer has a thickness of 20 μm or less.

15. The coaxial cable according to claim 11, wherein The outer strand includes a second conductor strand comprised of the third conductive material.

16. The coaxial cable according to any one of claims 1 to 15, wherein: The outer conductor includes a braided shield having a plurality of coated strands woven therein, The coated strands have: a second resin body composed of a fourth resin material; and The third conductor layer is made of a fourth conductive material and covers the outer peripheral surface of the second resin body.

17. The coaxial cable according to claim 16, wherein: The third conductor layer includes a third film or a third metal foil.

18. The coaxial cable according to claim 16, wherein: The third conductor layer has a thickness of 20 μm or less.

19. The coaxial cable according to any one of claims 1 to 15, wherein: The outer conductor includes a fourth conductor layer covering the outer peripheral surface of the insulator.

20. The coaxial cable according to claim 19, wherein The fourth conductor layer includes a fourth thin film or a fourth metal foil.

21. A semiconductor device testing apparatus for testing a semiconductor device, comprising the coaxial cable according to claim 1.

22. A semiconductor device testing apparatus for testing a semiconductor device, comprising the coaxial cable according to claim 11.

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