Light-emitting diode, manufacturing method thereof and light-emitting device

Abstract

The invention provides a light-emitting diode, a manufacturing method thereof and a light-emitting device. The light-emitting diode comprises a substrate, and a first semiconductor layer, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer which are sequentially positioned on the substrate, the first semiconductor layer comprises a first layer body and a lug boss; the convex part is arranged on the upper surface of the first layer body and comprises a plurality of bulges; the N-type semiconductor layer fills gaps among the plurality of protrusions. As the N-type semiconductor layer is low in contact resistance and good in conductivity, the projection part is arranged on the first semiconductor layer, the contact area between the first semiconductor layer and the N-type semiconductor layer is increased, the current expansion performance of the contact surface between the first semiconductor layer and the N-type semiconductor layer is improved, the burst caused by current gathering in the light-emitting diode is avoided, and the light-emitting efficiency is improved. The local brightness of the light-emitting diode is reduced; and the brightness is non-uniform.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor devices and packaging technology, and in particular, relates to a light emitting diode and a manufacturing method thereof, and a light emitting device. Background Art

[0002] Light Emitting Diode (LED) has high conversion efficiency and is widely used in lighting, display, automobile, communication and other fields. With the continuous advancement of optical system technology, the performance requirements for LED products are also increasing.

[0003] The epitaxial structure of a light-emitting diode includes a substrate, an N-type gallium nitride layer, a multiple quantum well layer (MQW) and a P-type gallium nitride layer. When current passes through the light-emitting diode, electrons in the N-type gallium nitride layer and holes in the P-type gallium nitride layer enter the multiple quantum well layer to emit light. Existing light-emitting diodes have the problem of insufficient luminous efficiency. Summary of the invention

[0004] The object of the present invention is to provide a light emitting diode and a manufacturing method thereof, and a light emitting device to solve the problems existing in the above-mentioned background technology.

[0005] In a first aspect, the present invention provides a light-emitting diode, comprising: a substrate, and a first semiconductor layer, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer sequentially located on the substrate; the first semiconductor layer comprises a first layer body and a protrusion; the protrusion is arranged on the upper surface of the first layer body, and the protrusion comprises a plurality of protrusions; the N-type semiconductor layer fills the gaps between the plurality of protrusions.

[0006] In a second aspect, the present invention provides a method for manufacturing a light emitting diode, comprising the following steps:

[0007] providing a substrate;

[0008] growing a first semiconductor layer on the substrate;

[0009] Etching the upper surface of the first semiconductor layer to form a protrusion, wherein the protrusion includes a plurality of protrusions;

[0010] An N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer are sequentially grown on the first semiconductor layer.

[0011] In a third aspect, the present invention provides a light-emitting device, which includes the above-mentioned light-emitting diode.

[0012] Compared with the prior art, the beneficial effects of the present invention include at least:

[0013] By providing a protrusion on the first semiconductor layer, the protrusion is made of the same material as the first semiconductor layer, and there are fewer defects formed by homogeneous growth, better lattice matching and quality, and reduced probability of non-radiative recombination, thereby improving luminous efficiency. In addition, the protrusion can improve the refraction and reflection effects of light, which is also conducive to improving luminous efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0015] Figure 1 A schematic diagram of the structure of a light emitting diode provided by an embodiment of the present invention;

[0016] Figures 2 to 5 A flow chart of a method for preparing a light emitting diode provided by an embodiment of the present invention;

[0017] Figure 2 A schematic diagram of a substrate structure according to an embodiment of the present invention;

[0018] Figure 3 A schematic diagram of a structure in which a first semiconductor layer is formed on a substrate according to an embodiment of the present invention;

[0019] Figure 4 A schematic diagram of a structure in which a protrusion is formed by etching a first semiconductor layer according to an embodiment of the present invention;

[0020] Figure 5 A schematic diagram of a structure in which an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer are sequentially epitaxially grown on a first semiconductor layer according to an embodiment of the present invention;

[0021] Figure 6 A schematic diagram of the position of the uneven distribution of the oxide film layer shown in an embodiment of the present invention.

[0022] Figure 7 A schematic diagram of a top view of the structure of a light emitting device provided in an embodiment of the present application;

[0023] Figure 8 A local electron microscope image of a light emitting diode provided by an embodiment of the present invention;

[0024] Reference numerals:

[0025] 1. Substrate; 1a. First substrate; 1b. Patterned structure; 2. First semiconductor layer; 2a. First layer body; 2b. Protrusion; 2c. Oxide film layer; 3. N-type semiconductor layer; 4. Light-emitting layer; 5. P-type semiconductor layer; 300. Light-emitting device; 301. Light-emitting diode; 302. Circuit substrate. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0027] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0028] The present invention provides a light emitting diode, comprising:

[0029] A substrate, and a first semiconductor layer, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer sequentially located on the substrate; the first semiconductor layer includes a first layer body and a protrusion; the protrusion is arranged on the upper surface of the first layer body, and the protrusion includes a plurality of protrusions; the N-type semiconductor layer fills the gaps between the plurality of protrusions.

[0030] Optionally, the first semiconductor layer is an unintentionally doped layer.

[0031] Optionally, the first semiconductor layer is an N-type doped layer, wherein the N-type doping concentration in the first semiconductor layer is less than

[0032] N-type doping concentration in the semiconductor layer.

[0033] Optionally, the N-type doping concentration in the N-type semiconductor layer is more than 5 times the N-type doping concentration in the first semiconductor layer.

[0034] Optionally, the N-type doping concentration in the first semiconductor layer is 5E17-5E18 atoms / cm 3 .

[0035] Optionally, the N-type semiconductor layer is an N-type doped layer, wherein the N-type doping concentration is greater than 1E19 atoms / cm 3 .

[0036] Optionally, the material of the protrusion is the same as that of the first layer.

[0037] Optionally, the height of the protrusions is 0.5-2.5 microns.

[0038] Optionally, the bottom width of the protrusion is 1.5-3.5 microns.

[0039] Optionally, the spacing between adjacent protrusions is 0.1-1 micrometer.

[0040] Optionally, the substrate includes a first substrate and a plurality of patterned structures formed on the first substrate.

[0041] Optionally, at least a portion of the upper surface of the first semiconductor layer is covered with an oxide film layer or a metal film layer.

[0042] Optionally, the refractive index of the oxide film layer or the metal film layer is greater than the refractive index of the protrusion and the first layer.

[0043] Optionally, a thickness of any one of the oxide film layer and the metal film layer is less than 50 angstroms.

[0044] Optionally, the oxygen content in the oxide film layer is greater than 1E17 atoms / cm 3 .

[0045] The present application also provides a method for manufacturing a light emitting diode, comprising the following steps:

[0046] providing a substrate;

[0047] growing a first semiconductor layer on the substrate;

[0048] Etching the upper surface of the first semiconductor layer to form a protrusion, wherein the protrusion includes a plurality of protrusions;

[0049] An N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer are sequentially grown on the first semiconductor layer.

[0050] Optionally, after the step of etching the upper surface of the first semiconductor layer to form a protrusion, the method further includes forming a film layer on at least a portion of the upper surface of the first semiconductor layer.

[0051] Optionally, the first semiconductor layer is exposed to air to form an oxide film layer, or the first semiconductor layer is placed in an oxygen-permeable environment to react and generate an oxide film layer.

[0052] Optionally, a metal film layer is formed on the first semiconductor layer by evaporation.

[0053] The present application also provides a light-emitting device, comprising the above-mentioned light-emitting diode or a light-emitting diode manufactured using the above-mentioned method for manufacturing a light-emitting diode.

[0054] The technical solution of the present invention will be clearly and completely described below through a variety of specific implementations in conjunction with the accompanying drawings in the embodiments of the present invention.

[0055] Embodiment 1

[0056] Reference Figure 1 The present application provides a light-emitting diode, comprising: a substrate 1, and a first semiconductor layer 2, an N-type semiconductor layer 3, a light-emitting layer 4 and a P-type semiconductor layer 5 sequentially located on the substrate 1; the first semiconductor layer 2 comprises a first layer body 2a and a protrusion 2b; the protrusion 2b is arranged on the upper surface of the first layer body 2a, and the protrusion 2b comprises a plurality of protrusions; the N-type semiconductor layer 3 fills the gaps between the plurality of protrusions.

[0057] In some embodiments of the present invention, the first semiconductor layer 2 is an unintentionally doped layer, for example, the first semiconductor layer is a U-GaN layer. Due to the lack of doping, it can reduce the generation of defects in the layer, ensure the quality of the first semiconductor layer, and at the same time, facilitate the subsequent formation of high-quality protrusions 2b, thereby improving the quality of epitaxial growth.

[0058] In some embodiments of the present invention, the first semiconductor layer 2 is an N-type doped layer, for example, the first semiconductor layer is an N-GaN layer. The N-type doping concentration in the first semiconductor layer 2 is less than the N-type doping concentration in the N-type semiconductor layer 3. Due to the doping of a small amount of impurities, it is beneficial for the subsequent homogeneous growth on the first layer 2a to form a convex portion 2b with better quality, fewer defects, better lattice matching and quality, and reduce the probability of non-radiative recombination, thereby improving the luminous efficiency.

[0059] In one example, the N-type doping concentration in the N-type semiconductor layer 3 is more than 5 times the N-type doping concentration in the first semiconductor layer 2 .

[0060] In one example, the N-type doping concentration in the first semiconductor layer 2 is 5E17-5E18 atoms / cm 3 .

[0061] In some embodiments of the present invention, the N-type semiconductor layer 3 is an N-type doped layer, wherein the N-type doping concentration is greater than 1E19 atoms / cm3, for example, the material of the N-type semiconductor layer 3 is a doped nitride, specifically a silicon-doped nitride.

[0062] Among them, the upper surface of the first layer 2a and the lower surface of the N-type semiconductor layer 3 are defined according to the epitaxial stacking direction. The upper surface of the first layer 2a refers to the side of the first layer 2a facing the N-type semiconductor layer 3, and the lower surface of the N-type semiconductor layer 3 refers to the side of the N-type semiconductor layer 3 facing the first semiconductor layer 2.

[0063] It should be noted that the protrusion 2b of the present application is arranged on the first layer 2a, but not on the N-type semiconductor layer 3, for the following reasons:

[0064] A light-emitting layer 4 is provided above the N-type semiconductor layer 3, and the light-emitting layer 4 is a region that provides light radiation for the recombination of electrons and holes. If a protrusion 2b is provided on the N-type semiconductor layer 3, the existence of the protrusion 2b may cause the light-emitting layer 4 above the N-type semiconductor layer 3 to be subjected to uneven stress or damage during the growth process, resulting in poor growth quality of the light-emitting layer 4, affecting the light-emitting efficiency of the light-emitting diode and the effect of reducing the ESD (antistatic performance) of the light-emitting diode due to voltage increase, so the protrusion 2b is not provided on the N-type semiconductor layer 3.

[0065] The raised portion 2b of the present application is disposed on the first layer 2a. Since the raised portion 2b does not contact the light-emitting layer 4, it will not damage the light-emitting layer 4, thereby ensuring the light-emitting efficiency of the light-emitting diode. At the same time, the raised portion 2b, the first semiconductor layer 2, and the N-type semiconductor layer 3 can all be gallium nitride, that is, they are homogeneous materials, which can repair or improve the lattice mismatch defects during the growth of the N-type semiconductor layer 3 and improve the crystal quality of the light-emitting diode.

[0066] In addition, the protrusion 2b can contact the N-type semiconductor layer 3 upward. Due to the high doping concentration of the N-type semiconductor layer 3, the contact resistance can be significantly reduced, which is conducive to the formation of ohmic contact and can promote the lateral expansion of current, that is, the current is more evenly distributed inside the light-emitting diode, thereby achieving the effect of reducing the operating voltage of the light-emitting diode and improving ESD (anti-static performance), thereby reducing the probability of ESD explosion points occurring in the light-emitting diode.

[0067] Specifically, since the N-type semiconductor layer 3 has low contact resistance and good conductivity, the material of the first semiconductor layer 2 is non-doped Si or gallium nitride doped with a small amount of Si, the contact resistance is relatively high compared to the N-type semiconductor layer 3, and the conductivity is relatively weak compared to the N-type semiconductor layer 3. By providing a protrusion 2b on the first layer 2a, the contact area between the first semiconductor layer 2 and the N-type semiconductor layer 3 is increased, and the current expansion performance of the contact surface between the first semiconductor layer 2 and the N-type semiconductor layer 3 is improved, thereby avoiding the current accumulation in the light-emitting diode from bursting, resulting in a decrease in the local brightness of the light-emitting diode and uneven brightness.

[0068] By providing the raised portion 2b, the probability of total reflection of the light emitted from the light emitting layer 4 at the interface between the first semiconductor layer 2 and the N-type semiconductor layer 3 after being reflected by the substrate 1 is reduced, thereby improving the light extraction effect.

[0069] In some embodiments of the present invention, the material of the protrusion 2b is the same as that of the first layer 2a, that is, the protrusion 2b and the first layer 2a are both unintentionally doped layers or N-type doped layers.

[0070] In some embodiments of the present invention, the protrusion 2b may be formed by etching. The height of the protrusion 2b obtained by etching and the thickness of the first layer 2a may be added together to obtain the thickness of the first semiconductor layer 2 before etching.

[0071] In some embodiments of the present invention, the height of the protrusion is 0.5-2.5 microns. The height of the protrusion refers to the farthest distance between each point on the protrusion and the first layer 2a. If the height of the protrusion is less than 0.5 microns, the contact surface between the first semiconductor layer 2 and the N-type semiconductor layer 3 is small, and the current expansion performance is poor; if the height of the protrusion is higher than 2.5 microns, the N-type semiconductor layer 3 cannot fill the protrusion, and there are also protrusions on the surface of the N-type semiconductor layer 3, which affects the growth of the N-type semiconductor layer 3.

[0072] In some embodiments of the present invention, the bottom width of the protrusion is 1.5-3.5 microns. The bottom width of the protrusion is adapted to the height of the protrusion, so that the inclination angle of the protrusion is conducive to improving the current expansion performance of the contact surface between the first semiconductor layer 2 and the N-type semiconductor layer 3.

[0073] In some embodiments of the present invention, the spacing between adjacent protrusions is 0.1-1 micron. If the closest distance between adjacent protrusions is less than 0.1 micron, the area occupied by the protrusions is too large, the upper surface of the first semiconductor layer 2 is nearly flat, the contact surface between the first semiconductor layer 2 and the N-type semiconductor layer 3 is small, and the current expansion performance is poor; if the closest distance between adjacent protrusions is higher than 1 micron, the area occupied by the protrusions is too small, the upper surface of the first semiconductor layer 2 is also nearly flat, and the contact surface between the first semiconductor layer 2 and the N-type semiconductor layer 3 is also small, and the current expansion performance is poor.

[0074] In some embodiments of the present invention, the protrusion may be in the shape of a cone, a column or other shapes.

[0075] In some embodiments of the present invention, the substrate 1 may be formed of a single layer of material, such as sapphire (Al2O3), SiC, Si and ZnO. The substrate 1 may also include a first substrate 1a and a plurality of patterned structures 1b formed on the first substrate 1a, wherein the material of the patterned structures 1b includes one or more of SiO2, Si3N4, ZnO2, Si, SiC, GaAs, Ti3O5, and TiO2.

[0076] Reference Figure 1The patterned structure 1 of the substrate 1 and the protrusions of the protrusion 2b exist simultaneously, which can not only improve the reflectivity and thus enhance the overall brightness of the light-emitting diode, but also appropriately increase the dislocation to facilitate the formation of the number of v-pits (V-shaped pits). The V-shaped pits can provide more current diffusion channels and bypass the high resistance areas in the material, thereby achieving the effect of reducing voltage and improving ESD (antistatic performance). The patterned structure 1b is used to improve the light extraction efficiency of the light-emitting diode. The patterned structure 1b can be formed by etching or surface deposition.

[0077] In some embodiments of the present invention, the patterned structure 1a is a convex portion, and the shape of the convex portion can be a cone, a column or other shapes.

[0078] Furthermore, the size of the convex portion of the patterned structure 1a is smaller than the size of the convex portion 2b. When light propagates between the two, the light is less affected by the convex portion of the patterned structure 1a than by the convex portion 2b, thereby improving the refraction and reflection effects of light, which is beneficial to improving the luminous efficiency. For example, the height of the convex portion is 0.5-2.5 microns, and the bottom width of the convex portion is 1.5-3.5 microns.

[0079] The spacing between adjacent convex portions of the patterned structure 1a is greater than the spacing between adjacent convex portions of the convex portion 2b. When light propagates between the two, the light is less affected by the convex portions of the patterned structure 1a than by the convex portions of the convex portion 2b, thereby improving the refraction and reflection effects of light, which is beneficial to improving light extraction efficiency. For example, the spacing between adjacent convex portions is greater than 1 micron.

[0080] Reference Figures 2 to 5 , the manufacturing process of the light emitting diode of the first embodiment is described below.

[0081] Provide a substrate 1. In this embodiment, the substrate 1 is preferably a sapphire substrate. Figure 2 , a patterned structure 1b can be obtained by patterning on the first substrate 1a. Figure 3 , a first semiconductor layer 2 is formed on the substrate 1 by epitaxial growth. Figure 4 , etching to form a protrusion on the first semiconductor layer 2. Figure 5, an N-type semiconductor layer 3, a light-emitting layer 4 and a P-type semiconductor layer 5 are grown on the first semiconductor layer 2 by metal-organic chemical vapor deposition (MOCVD) to form a complete light-emitting diode structure. The N-type semiconductor layer 3 provides electrons by doping with N-type impurities, such as Si, Ge, Sn, Se and Te. The light-emitting layer 4 is a region that provides light radiation for the recombination of electrons and holes. Different materials can be selected according to different emission wavelengths. The light-emitting layer 4 can be a periodic structure of a single quantum well or multiple quantum wells. The P-type semiconductor layer 5 is located on the light-emitting layer 4. The P-type semiconductor layer 5 provides holes by doping with P-type impurities. The P-type impurities can be Mg, Zn, Ca, Sr and Ba.

[0082] Embodiment 2

[0083] Reference Figure 6 Compared with the light emitting diode of the first embodiment of the present invention, the light emitting diode of the second embodiment is different mainly in that at least a portion of the upper surface of the first semiconductor layer 2 is covered with an oxide film layer 2c or a metal film layer.

[0084] The oxide film layer 2c or the metal film layer is used to make the current distribution between the N-type semiconductor layer 3 and the protruding surface uniform, thereby avoiding the current accumulation in the light-emitting diode from bursting, resulting in a local reduction in the brightness of the light-emitting diode and uneven brightness.

[0085] In some embodiments of the present invention, the refractive index of any one of the oxide film layer 2c and the metal film layer is greater than the refractive index of the protrusion 2b and the first layer 2a, so that the light emitted from the light-emitting layer 4 passes through the N-type semiconductor layer 3 and then is totally reflected by the oxide film layer 2c or the metal film layer, thereby improving the light extraction efficiency of the light-emitting diode.

[0086] In some embodiments of the present invention, the oxide film layer 2 c or the metal film layer may completely cover the upper surface of the first semiconductor layer 2 , or may partially cover the upper surface of the first semiconductor layer 2 .

[0087] In some embodiments of the present invention, the oxide film layer 2c can be formed by oxidation. For example, the oxide film layer 2c is formed by exposing the first semiconductor layer 2 to air, or the first semiconductor layer 2 is placed in an oxygen-permeable environment to react and generate the oxide film layer 2c. The material of the oxide film layer 2c is preferably gallium oxide.

[0088] Since the oxide film layer 2 c is obtained by natural oxidation, the oxide film layer 2 c on the surface of the first semiconductor layer 2 has uneven thickness and / or uneven distribution.

[0089] Furthermore, the thickness of the oxide film layer 2c is controlled by controlling the concentration and time of the air or oxygen to which the first semiconductor layer 2 is exposed. Specifically, if the concentration and time of air or oxygen are reduced, part of the upper surface of the first semiconductor layer 2 can be covered with the oxide film layer 2c, and if the concentration and time of air or oxygen are increased, the entire upper surface of the first semiconductor layer 2 can be covered with the oxide film layer 2c.

[0090] In other embodiments of the present invention, a metal film layer may be formed by evaporation on the first semiconductor layer 2. Since the metal film layer is formed by evaporation, the metal film layer uniformly covers the surface of the first semiconductor layer 2. The material of the metal film layer is preferably Al or Mg.

[0091] In some embodiments of the present invention, the thickness of any one of the oxide film layer 2c and the metal film layer is less than 50 angstroms. Further, it is preferred that the thickness of the oxide film layer is no greater than 20 angstroms.

[0092] In some embodiments of the present invention, the oxygen content of the oxide film layer 2c is greater than 1E17 atoms / cm 3 .

[0093] Embodiment 3

[0094] This embodiment is used to illustrate the light emitting diode of the present application. Figure 7 As shown, the light emitting device 300 of the present application includes a plurality of light emitting diodes 301 of the present application, and also includes a circuit substrate 302 and solder.

[0095] The circuit substrate 302 includes a plurality of pad electrodes, and a plurality of light emitting diodes 301 are arranged on the circuit substrate 302. The light emitting diodes 301 are attached to the pad electrodes on the circuit substrate 302 by solder.

[0096] The light-emitting diode of the present application has reliable quality and low risk of failure, because its pad electrode and insulating layer are firmly adhered.

[0097] The above are only preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A light emitting diode, characterized in that: It includes: a substrate, and a first semiconductor layer, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer sequentially located on the substrate; the first semiconductor layer includes a first layer body and a protruding portion; the protruding portion is arranged on the upper surface of the first layer body, and the protruding portion includes a plurality of protrusions; the N-type semiconductor layer fills the gaps between the plurality of protrusions.

2. The light emitting diode according to claim 1, characterized in that: The first semiconductor layer is an unintentionally doped layer.

3. The light emitting diode according to claim 1, characterized in that: The first semiconductor layer is an N-type doped layer, wherein the N-type doping concentration in the first semiconductor layer is lower than the N-type doping concentration in the N-type semiconductor layer.

4. The light emitting diode according to claim 3, characterized in that: The N-type doping concentration in the N-type semiconductor layer is more than 5 times the N-type doping concentration in the first semiconductor layer.

5. The light emitting diode according to claim 3, characterized in that: The N-type doping concentration in the first semiconductor layer is 5E17-5E18 atoms / cm 3 .

6. The light emitting diode according to claim 1, characterized in that: The N-type semiconductor layer is an N-type doped layer, wherein the N-type doping concentration is greater than 1E19 atoms / cm 3 .

7. The light emitting diode according to any one of claims 2 to 6, characterized in that: The material of the protrusion is the same as that of the first layer.

8. The light emitting diode according to claim 1, characterized in that: The height of the protrusion is 0.5-2.5 microns.

9. The light emitting diode according to claim 1, characterized in that: The bottom width of the protrusion is 1.5-3.5 microns.

10. The light emitting diode according to claim 1, characterized in that: The distance between adjacent protrusions is 0.1-1 micron.

11. The light emitting diode according to claim 1, characterized in that: The substrate includes a first substrate and a plurality of patterned structures formed on the first substrate.

12. The light emitting diode according to claim 1, characterized in that: At least a portion of the upper surface of the first semiconductor layer is covered with an oxide film layer or a metal film layer.

13. The light emitting diode according to claim 12, characterized in that: The refractive index of the oxide film layer or the metal film layer is greater than the refractive index of the protrusion and the first layer.

14. The light emitting diode according to claim 12, characterized in that: The thickness of any one of the oxide film layer and the metal film layer is less than 50 angstroms.

15. The light emitting diode according to claim 12, characterized in that: The oxygen content in the oxide film layer is greater than 1E17 atoms / cm 3 .

16. A method for manufacturing a light emitting diode, characterized in that: The following steps are involved: providing a substrate; growing a first semiconductor layer on the substrate; Etching the upper surface of the first semiconductor layer to form a protrusion, wherein the protrusion includes a plurality of protrusions; An N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer are sequentially grown on the first semiconductor layer.

17. The manufacturing method according to claim 16, characterized in that: After the step of etching the upper surface of the first semiconductor layer to form a protrusion, the method further includes forming a film layer on at least a portion of the upper surface of the first semiconductor layer.

18. The manufacturing method according to claim 17, characterized in that: The first semiconductor layer is exposed to air to form an oxide film layer, or the first semiconductor layer is placed in an oxygen-permeable environment to react and generate an oxide film layer.

19. The manufacturing method according to claim 17, characterized in that: A metal film layer is formed on the first semiconductor layer by using an evaporation method.

20. A light emitting device, characterized in that: The invention comprises a light emitting diode as claimed in any one of claims 1 to 15 or a light emitting diode manufactured by the method for manufacturing a light emitting diode as claimed in any one of claims 16 to 19.

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