TCO film and preparation method thereof

By optimizing the annealing temperature and annealing time of the TCO film and reducing the number of film defects, the problem of difficulty in improving the conductivity and resistivity in the prior art is solved, and the effects of high carrier mobility and low resistivity are achieved.

CN119663221APending Publication Date: 2025-03-21FIRST RARE MATERIALS CO LTD
4 Cites 0 Cited by

Patent Information

Application Number
CN202411706900.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-26
Publication Date
2025-03-21

AI Technical Summary

Technical Problem

The prior art is difficult to simultaneously improve the conductivity and reduce the resistivity of transparent conductive oxide (TCO) films while maintaining high light transmittance.

Method used

By optimizing the annealing temperature and annealing time of the TCO film during the annealing process, the number of defects in the film is reduced, thereby improving the conductivity and reducing the resistivity. The specific method includes depositing indium cerium oxide to the surface of the glass substrate and annealing in an environment of 100 to 500°C for 5 to 30 minutes.

Benefits of technology

The high carrier mobility and low resistivity of the TCO film are achieved, which improves the conductive ability of the film while maintaining a high light transmittance.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The invention belongs to the technical field of production of electro-permeable films, and discloses a preparation method of a TCO film, which comprises the following steps: depositing indium cerium oxide on the surface of a glass substrate to obtain a glass substrate plated with indium cerium oxide, and annealing the glass substrate in an environment of 100-500 DEG C for 5-30 minutes to obtain the TCO film. According to the method, the annealing temperature and the annealing time of the TCO thin film in the annealing process are optimized, so that the defect number of the TCO thin film is reduced, the lower defect number means that the density of the thin film and the uniformity and stability of the internal structure are improved, and therefore the carrier mobility of the TCO thin film is greatly improved after annealing, and the performance of the TCO thin film is improved. Therefore, the conductivity of the TCO thin film is improved, the resistivity is reduced, and in addition, the invention further discloses the TCO thin film.
Need to check novelty before this filing date? Find Prior Art