Patch antenna based on SIW feed

Abstract

The invention belongs to the technical field of communication, and particularly discloses a patch antenna based on SIW feed, which sequentially comprises a radiation patch layer, a coupling gap layer and a metal ground layer from top to bottom, and dielectric substrates or dielectric bonding plates are arranged between the radiation patch layer and the coupling gap layer and between the coupling gap layer and the metal ground layer; a coupling gap is etched in the coupling gap layer; the dielectric substrate or the dielectric bonding plate between the coupling gap layer and the metal ground layer is provided with a plurality of metalized via holes used for connecting the coupling gap layer and the metal ground layer. A plurality of metalized via holes are formed in the periphery and the middle position of the dielectric substrate or the dielectric bonding plate between the coupling gap layer and the metal ground layer, and two rows of metalized via holes are transversely formed in the middle position of the dielectric substrate or the dielectric bonding plate; and the two rows of transversely arranged metalized through holes, the coupling gap layer and the metal ground layer jointly form an SIW feed structure. The antenna provided by the invention has the characteristics of low profile and high gain at the same time.

Description

Technical Field

[0001] The present invention relates to the field of communication technology, and in particular to a patch antenna based on SIW feeding. Background Art

[0002] With the development of millimeter wave technology, antennas, as an important component of millimeter wave systems, have received extensive attention. Common high-gain antennas include parabolic antennas, but they have the disadvantages of being large and bulky. How to achieve a low-profile high-gain antenna is a hot topic of research.

[0003] Microstrip or stripline-fed patch antennas have the characteristics of low profile, but have the disadvantage of high loss when forming a complex feeding network. Waveguide feeding has the advantage of low loss, but it is large in size and not easy to integrate.

[0004] Substrate integrated waveguide (SIW) is a type of transmission line between microstrip line and dielectric filled waveguide, which has the advantages of both traditional waveguide and microstrip transmission line and can be applied to high-performance millimeter wave systems. Therefore, it is urgent to propose a patch antenna based on SIW feeding to achieve a high-gain antenna with a low profile. Summary of the invention

[0005] The present invention provides a patch antenna based on SIW feeding, aiming to have the characteristics of low profile and high gain at the same time.

[0006] The present invention is implemented by the following technical scheme: a patch antenna based on SIW feeding, which comprises, from top to bottom, a radiation patch layer, a coupling slot layer and a metal stratum, wherein a dielectric substrate or a dielectric adhesive plate is provided between the radiation patch layer and the coupling slot layer and between the coupling slot layer and the metal stratum; a coupling slot is etched on the coupling slot layer; A plurality of metallized vias for connecting the coupling gap layer and the metal ground layer are provided on the dielectric substrate or dielectric adhesive plate between the coupling gap layer and the metal ground layer; A plurality of the metallized vias are arranged around and in the middle of the dielectric substrate or the dielectric adhesive plate between the coupling slot layer and the metal stratum. The metallized vias in the middle of the dielectric substrate or the matrix adhesive plate are arranged in two rows transversely, and the distance between the two rows of transversely arranged metallized vias is L1; the two rows of transversely arranged metallized vias, the coupling slot layer and the metal stratum together form a SIW feeding structure.

[0007] Beneficial effects: In this solution, two rows of horizontally arranged metalized vias, the coupling slot layer and the metal ground layer together form a SIW feeding structure. The SIW-fed patch antenna form proposed in this solution can have the characteristics of low profile and high gain at the same time. The patch antenna in this solution has low loss when forming a complex feeding network, and is small in size and easy to integrate.

[0008] In addition, in this solution, the dielectric substrate can be etched with a required pattern according to actual needs, and the dielectric adhesive plate can fix the multi-layer PCB board structure to form an integrated structure.

[0009] Furthermore, a dielectric adhesive plate is provided between the radiation patch layer and the coupling gap layer; A dielectric substrate is disposed between the coupling gap layer and the metal stratum. The coupling gap layer and the metal stratum are respectively etched on two sides of the dielectric substrate. The radiation patch layer is printed on the dielectric adhesive plate. The dielectric adhesive plate is fixed to the coupling gap layer, the dielectric substrate and the metal stratum as a whole.

[0010] Beneficial effect: After the radiation patch is printed on the dielectric adhesive board in this solution, the dielectric substrate, the coupling gap layer and the metal ground layer can be bonded and fixed through the dielectric adhesive board, so that the multi-layer PCB board is connected as a whole.

[0011] Furthermore, the radiation patch layer includes a patch antenna, and the patch antenna includes four radiation patches, and there are gaps between the four radiation patches.

[0012] Beneficial effect: In this solution, the patch antenna includes four radiating patches, and there are gaps between the four radiating patches, which is conducive to expanding the working bandwidth of the antenna.

[0013] Furthermore, the patch antennas are provided in two groups, and the coupling slot layer is provided with two coupling slots, and the two coupling slots are respectively aligned with the central gaps of the radiation patches of the two groups of patch antennas.

[0014] Beneficial effects: In this solution, the coupling gap is aligned with the central gap in the radiation patch, which can achieve maximum radiation of electromagnetic waves in space.

[0015] Furthermore, the overall shape of the four radiation patches is any one of a rectangle, a circle or a butterfly.

[0016] Beneficial effects: In this solution, the shape of the radiation patch can be selected according to actual conditions.

[0017] Furthermore, two metallized matching holes are provided on the dielectric substrate or dielectric bonding plate between the coupling gap layer and the metal ground layer.

[0018] Beneficial effect: In this solution, the positions of the two metallized matching holes can be adjusted according to actual conditions, so as to simultaneously excite two groups of patch antennas and realize equal amplitude power division of the electromagnetic field, thereby achieving centimeter and adjustable impedance matching.

[0019] Furthermore, the distance L1 between the two rows of transversely arranged metallized vias for forming the SIW feeding structure is greater than the cut-off wavelength.

[0020] Beneficial effect: To ensure that there is no cutoff within the frequency band used, the distance L1 between the two rows of metallized vias that make up the SIW structure must be greater than the cutoff wavelength, so that the distance between the two groups of patch antennas is limited, and the antenna's directional pattern has a higher side lobe. Furthermore, the coupling gap layer is folded to form a two-layer structure, the metal layer at the lower layer is the folded gap layer, and the folded gap layer is provided with a folded gap; a dielectric substrate or a dielectric adhesive plate is provided between the folded gap layer, the coupling gap layer and the metal layer.

[0021] Beneficial effects: In this solution, the SIW feeding structure is folded into two dimensions by opening a folding gap to form a two-layer feeding structure. This solution can achieve miniaturization of the structure.

[0022] Furthermore, the spacing between two rows of transversely arranged metallized vias in the folded SIW feeding structure is greater than L1 / 2.

[0023] Beneficial effect: The spacing between the two rows of transverse holes in the folded SIW feeding structure only needs to be greater than L1 / 2 to achieve operation at the same operating frequency.

[0024] Furthermore, the folding gap includes a first folding gap and a second folding gap, the first folding gap is an L-shaped structure, the second folding gap is a U-shaped structure, and among the two rows of transversely arranged metallized vias, one row of metallized vias is located on the inner side of the first folding gap, and the other row of metallized vias is located on the inner side of the second folding gap.

[0025] Beneficial effects: The folded gap shape in this solution can reduce the overall size and adapt to the folded shape, and the feeding layer in this solution is folded into two layers, and the electromagnetic field can be transmitted between the two layers through the folded gap. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The drawings described herein are used to provide a further understanding of the embodiments of the present invention, constitute a part of this application, and do not constitute a limitation of the embodiments of the present invention. In the drawings: Figure 1 It is a stereogram of a patch antenna embodiment 1 based on SIW feeding of the present invention; Figure 2An exploded view of a patch antenna embodiment 1 based on SIW feeding of the present invention; Figure 3 A top view of a patch antenna embodiment 1 based on SIW feeding of the present invention; Figure 4 A top view of a dielectric substrate in Embodiment 1 of a patch antenna based on SIW feeding of the present invention; Figure 5 This is the simulation result of the port S11 of the patch antenna based on SIW feeding in Embodiment 1 of the patch antenna based on SIW feeding of the present invention; Figure 6 The simulated radiation pattern of the patch antenna with SIW feeding at 35 GHz in Embodiment 1 of the patch antenna with SIW feeding according to the present invention; Figure 7 It is a stereoscopic diagram of a patch antenna embodiment 2 based on SIW feeding of the present invention; Figure 8 A top view of a patch antenna embodiment 2 based on SIW feeding of the present invention; Fig. 9 A top view of a folded slot layer in Embodiment 2 of a patch antenna based on SIW feeding of the present invention; Fig.10 It is a schematic diagram of the simulation results of the port S11 of the folded SIW fed patch antenna; Fig.11 This is the simulated radiation pattern of the folded SIW fed patch antenna at 35GHz.

[0027] Marks and corresponding parts names in the attached drawings: Radiating patch layer 1, coupling slot layer 2, coupling slot 201, metal ground layer 3, dielectric bonding plate 4, dielectric substrate 5, metallized via 6, metallized matching hole 7, folded slot layer 8, folded slot 9, first folded slot 901, second folded slot 902, connecting plate 10. DETAILED DESCRIPTION

[0028] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments and drawings. The exemplary embodiments of the present invention and their description are only used to explain the present invention and are not intended to limit the present invention.

[0029] Example 1 like Figure 1-Figure 2As shown, this embodiment 1 provides a patch antenna based on SIW feeding, which is a three-layer PCB board structure, which includes a radiation patch layer 1, a coupling slot layer 2 and a metal layer 3 from top to bottom. Between the radiation patch layer 1 and the coupling slot layer 2 and between the coupling slot layer 2 and the metal layer 3 is a dielectric substrate 5 or a dielectric adhesive plate 4. In this embodiment, the entire patch antenna structure is a needle rectangular plate structure. In this embodiment, between the radiation patch layer 1 and the coupling slot layer 2 is a dielectric adhesive plate 4, and the dielectric adhesive plate 4 is an adhesive plate material with a thickness of 0.508. The dielectric adhesive plate 4 used in this embodiment is a plate of the M7 series.

[0030] The dielectric substrate 5 is disposed between the coupling gap layer 2 and the metal layer 3, and the dielectric substrate 5 is a dielectric substrate 5 with a thickness of 0.254 mm. The coupling gap layer 2 and the metal layer 3 are respectively etched on both sides of the dielectric substrate 5, and the radiation patch layer 1 is printed on the dielectric adhesive plate 4, which is bonded and fixed to the whole formed by the coupling gap layer 2, the dielectric substrate 5 and the metal layer 3.

[0031] Radiating patch layer 1 The radiating patch layer 1 includes a patch antenna, which includes four radiating patches. There are gaps between the four radiating patches. The overall shape of the four radiating patches is any one of rectangular, circular or butterfly shapes, but is not limited to the above three shapes. In this embodiment, the overall shape of the four radiating patches is a rectangle for illustration.

[0032] A coupling slot 201 is etched on the coupling slot layer 2, and the coupling slot 201 is located at the gap between the radiation patch in the radiation patch layer 1 to avoid interference between the radiation patch layer 1 and the coupling slot 201; in this embodiment, there are two groups of patch antennas, and two coupling slots 201 are provided on the coupling slot layer 2. Figure 3 As shown, the two coupling slots 201 are respectively aligned with the central gaps of the radiation patches of the two groups of patch antennas, so that the coupling slots 201 avoid interference with the radiation patches, ensuring that the coupling slots 201 transmit the electromagnetic field smoothly.

[0033] like Figure 2 As shown, a plurality of metallized vias 6 for connecting the coupling gap layer 2 and the metal ground layer 3 are arranged on the dielectric substrate 5 between the coupling gap layer 2 and the metal ground layer 3. The metallized vias 6 structure penetrates and connects the coupling gap layer 2 and the metal ground layer 3; Figure 3 and Figure 4As shown, a plurality of metallized vias 6 are arranged around and in the middle of the dielectric substrate 5 between the coupling slot layer 2 and the metal ground layer 3. In this embodiment, the metallized vias 6 in the middle of the dielectric substrate 5 are arranged in two rows transversely, and the distance between the two rows of transversely arranged metallized vias 6 is L1; the two rows of transversely arranged metallized vias 6, the coupling slot layer 2 and the metal ground layer 3 together form a SIW feeding structure, and the coupling slot layer 2 and the metal ground layer 3 constitute a SIW feeding layer.

[0034] In this embodiment, the remaining metallized vias 6 extend outward along the two rows of metallized vias 6 arranged laterally, and are distributed around the dielectric substrate 5 in a rectangular structure. The spacing between adjacent metallized vias 6 is 0.3-0.8 mm. In this embodiment, the spacing between adjacent metallized vias 6 is 0.5 mm. Figure 4 As shown, the two rows of metallized vias 6 arranged laterally on the left side, the coupling slot layer 2 and the metal ground layer 3 together form a SIW feeding structure for transmitting the TE10 mode of the electromagnetic field.

[0035] In this embodiment, in order to realize equal amplitude and in-phase feeding of two groups of patch antennas, two metallized matching holes 7 are further provided on the dielectric substrate 5 between the coupling slot layer 2 and the metal layer 3. The metallized matching holes 7 also penetrate and connect the coupling slot layer 2 and the metal layer 3. In order to realize simultaneous excitation of two groups of patch antennas, it is necessary to realize equal amplitude power division of the electromagnetic field. To achieve this purpose, in this embodiment, two metallized matching holes 7 are provided on the dielectric substrate 5, such as Figure 4 As shown, by setting the position of the metallized matching hole 7 according to the actual situation (parameters meet the design requirements), power division and impedance matching are achieved. In this embodiment, the coupling gap 201 is set at the position where the electric field is the largest, and the far-field radiation of the electromagnetic field is achieved by cutting the electric field to generate a magnetic field to excite the surface radiation patch.

[0036] like Figure 3 As shown, the overall length L of the patch antenna in this embodiment is 10.2 mm and the width W is 7 mm.

[0037] The SIW feeding structure in this embodiment has the high-pass characteristics of the waveguide structure. In order to ensure that there is no cutoff in the frequency band used, the distance L1 between the two rows of transversely arranged metallized vias 6 used to form the SIW feeding structure is greater than the cutoff wavelength, so that the distance between the two groups of patch antennas is limited, and the antenna's directional diagram side lobe is higher. The size of L1 in this embodiment is inversely proportional to the band. The smaller the size of L1, the higher the band passed. If you want to pass a low band, the size of L1 must be larger.

[0038] like Figure 5As shown, it is the simulation result of S11 of the patch antenna port fed by SIW. According to the simulation results, this type of antenna satisfies S11≤-10dB in the frequency band of 31.5GHz~36.8GHz. The relative bandwidth is 15%.

[0039] like Figure 6 The figure shows the simulated radiation pattern of the SIW-fed patch antenna of the present invention at 35 GHz. According to the simulation results, the normal gain of the antenna is 10.2 dB and has excellent radiation characteristics.

[0040] Example 2 Combination Figure 7 and Figure 8 As shown, the difference between this embodiment and embodiment 1 is that the directional pattern side lobe of the patch antenna in embodiment 1 is relatively high, and the patch antenna in embodiment 1 is not conducive to achieving side lobe suppression of the antenna directional pattern when used to form a complex antenna array.

[0041] Therefore, in order to make up for the above shortcomings, the SIW feeding structure is folded in a patch antenna based on SIW feeding in this embodiment. Since the middle of SIW is an ideal magnetic wall and the electric field is parallel to the symmetry plane, the SIW can be divided into two layers in the middle of SIW to achieve SIW folding and further miniaturization of the structure. The spacing between the two rows of transverse holes of the folded SIW only needs to be greater than L1 / 2 to achieve the same Figure 1 The antennas shown have the same operating frequency. Specifically: The coupling gap layer 2 is folded to form a two-layer structure, and the metal layer at the lower layer is the folded gap layer 8. Fig. 9 As shown, a folded slot layer 8 is provided with a folded slot 9; a dielectric substrate 5 or a dielectric bonding plate 4 is provided between the folded slot layer 8, the coupling slot layer 2 and the metal layer 3. In this embodiment, a dielectric substrate 5 is provided between the folded slot layer 8, the coupling slot layer 2 and the metal layer 3. The spacing between the two rows of transversely arranged metalized vias 6 in the folded SIW feeding structure is greater than L1 / 2.

[0042] like Figure 8 and Fig. 9 As shown, in this embodiment, the folding gap 9 includes a first folding gap 901 and a second folding gap 902, the first folding gap 901 is an L-shaped structure, and the second folding gap 902 is a U-shaped structure. Among the two rows of transversely arranged metallized vias 6, one row of metallized vias 6 is located on the inner side of the first folding gap 901, and the other row of metallized vias 6 is located on the inner side of the second folding gap 902.

[0043] Combination Figure 7As shown, in this embodiment, the coupling gap layer 2, the dielectric substrate 5, the folded gap layer 8, the dielectric substrate 5 and one side of the metal layer 3 are connected as a whole through a connecting plate 10, and the dielectric adhesive plate 4 adheres and fixes the whole formed by the coupling gap layer 2, the dielectric substrate 5, the folded gap layer 8, the dielectric substrate 5 and the metal layer 3 to form a whole.

[0044] The folded SIW fed patch antenna in this embodiment is composed of a radiation patch layer 1, a coupling slot layer 2 and a feeding layer, and a dielectric substrate 5 or a dielectric adhesive plate 4 is between the layers. Compared with the antenna form in Example 1, the feeding layer in this embodiment is folded into two layers, namely, a coupling slot layer 2 and a folded slot layer 8 and a folded slot layer 8 and a metal ground layer 3. The electromagnetic field is transmitted between the two layers through a folded slot 9.

[0045] The metallized via structure penetrates and connects the coupling slot layer 2, the folded slot layer 8 and the metal ground layer 3. In order to realize the equal amplitude and in-phase feeding of the two groups of patch antennas, the following is set Figure 8 The two metallized matching holes 7 are shown. Power division and matching are achieved by adjusting the positions of the metallized matching holes 7. The metallized matching holes 7 also penetrate and connect the coupling slot layer 2, the folded slot layer 8 and the metal ground layer 3.

[0046] The length L of the folded SIW fed patch antenna in this embodiment is 8.7 mm and the width is 5.2 mm.

[0047] like Fig.10 As shown, it is the simulation result of port S11 of the folded SIW fed patch antenna. According to the simulation results, the antenna satisfies S11≤-10dB in the frequency band of 32.6~39.08GHz. The relative bandwidth is 17.9%.

[0048] like Fig.11 As shown, it is the simulated radiation pattern of the folded SIW fed patch antenna at 35 GHz. According to the simulation results, the antenna gain of the antenna at 35 GHz is 8.7 dB, achieving efficient radiation of the electromagnetic field.

[0049] It should be noted that the above description of the disclosed embodiments enables professionals and technicians in the field to implement or use the present application. Various modifications to these embodiments will be apparent to professionals and technicians in the field, and the general principles defined herein can be implemented in other embodiments without departing from the scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but should conform to the widest scope consistent with the principles and novel features disclosed herein.

[0050] In the description of the present invention, it should be noted that the terms "first", "second", "third", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0051] In the description of this document, terms such as "up", "down", "left", "right", "front", "back", "top", "bottom", "inside", "outside", "middle", "vertical", "horizontal", "lateral", and "longitudinal" indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only used to illustrate the relative positional relationships between the various components or components, and do not particularly limit the specific installation orientations of the various components or components.

[0052] In the description of this document, some terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to the specific circumstances.

[0053] In the description of this document, the terms "installed", "set", "provided with", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0054] The structures, proportions, sizes, etc. drawn in the drawings in this application are only used to match the contents disclosed in this technical briefing book for technical personnel in this field to understand and read, and are not used to limit the restrictive conditions for the implementation of this application. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by this application.

[0055] The terms used in this document are those common terms currently widely used in the art in consideration of the functions of the present disclosure, but these terms may vary according to the intention of a person of ordinary skill in the art, precedents, or new technologies in the art. In addition, specific terms may be selected by the applicant, and in this case, their detailed meanings will be described in the detailed description of the present disclosure. Therefore, the terms used in the document should not be understood as simple names, but rather as an overall description based on the meaning of the terms and the present disclosure.

[0056] Flowcharts or text are used in this document to illustrate the operating steps performed according to the embodiments of the present application. It should be understood that the operating steps in the embodiments of the present application are not necessarily accurately performed in the order of recording. On the contrary, various steps can be processed in reverse order or simultaneously as needed. At the same time, other operations can also be added to these processes, or a certain step or several steps can be removed from these processes.

[0057] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A patch antenna based on SIW feeding, characterized in that: It includes, from top to bottom, a radiation patch layer, a coupling slot layer and a metal stratum, wherein a dielectric substrate or a dielectric bonding plate is provided between the radiation patch layer and the coupling slot layer and between the coupling slot layer and the metal stratum; A coupling gap is etched on the coupling gap layer; A plurality of metallized vias for connecting the coupling gap layer and the metal ground layer are provided on the dielectric substrate or dielectric adhesive plate between the coupling gap layer and the metal ground layer; A plurality of the metallized vias are arranged around and in the middle of the dielectric substrate or the dielectric adhesive plate between the coupling slot layer and the metal stratum. The metallized vias in the middle of the dielectric substrate or the matrix adhesive plate are arranged in two rows transversely, and the distance between the two rows of transversely arranged metallized vias is L1; the two rows of transversely arranged metallized vias, the coupling slot layer and the metal stratum together form a SIW feeding structure.

2. A patch antenna based on SIW feeding according to claim 1, characterized in that: A dielectric adhesive plate is provided between the radiation patch layer and the coupling gap layer; A dielectric substrate is disposed between the coupling gap layer and the metal stratum. The coupling gap layer and the metal stratum are respectively etched on two sides of the dielectric substrate. The radiation patch layer is printed on the dielectric adhesive plate. The dielectric adhesive plate is fixed to the coupling gap layer, the dielectric substrate and the metal stratum as a whole.

3. A patch antenna based on SIW feeding according to claim 1, characterized in that: The radiation patch layer includes a patch antenna, and the patch antenna includes four radiation patches, and there are gaps between the four radiation patches.

4. A patch antenna based on SIW feeding according to claim 3, characterized in that: There are two groups of patch antennas, and two coupling slots are provided on the coupling slot layer. The two coupling slots are respectively aligned with the central gaps of the radiation patches of the two groups of patch antennas.

5. The patch antenna based on SIW feeding according to claim 3, characterized in that: The overall shape of the four radiation patches is any one of a rectangle, a circle or a butterfly.

6. The patch antenna based on SIW feeding according to claim 2, characterized in that: Two metallized matching holes are also provided on the dielectric substrate or dielectric bonding plate between the coupling gap layer and the metal ground layer.

7. The patch antenna based on SIW feeding according to claim 1, characterized in that: The distance L1 between the two rows of transversely arranged metallized vias for forming the SIW feeding structure is greater than the cut-off wavelength.

8. A patch antenna based on SIW feeding according to any one of claims 1 to 7, characterized in that: The coupling gap layer is folded to form a two-layer structure, the metal layer at the lower layer is a folded gap layer, and a folded gap is opened on the folded gap layer; a dielectric substrate or a dielectric adhesive plate is provided between the folded gap layer, the coupling gap layer and the metal ground layer.

9. The patch antenna based on SIW feeding according to claim 8, characterized in that: The spacing between two rows of transversely arranged metallized vias in the folded SIW feeding structure is greater than L1 / 2.

10. The patch antenna based on SIW feeding according to claim 8, characterized in that: The folding gap includes a first folding gap and a second folding gap, the first folding gap is an L-shaped structure, the second folding gap is a U-shaped structure, and among the two rows of transversely arranged metallized vias, one row of metallized vias is located on the inner side of the first folding gap, and the other row of metallized vias is located on the inner side of the second folding gap.

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